TW202340779A - Electronic device - Google Patents
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- TW202340779A TW202340779A TW111124703A TW111124703A TW202340779A TW 202340779 A TW202340779 A TW 202340779A TW 111124703 A TW111124703 A TW 111124703A TW 111124703 A TW111124703 A TW 111124703A TW 202340779 A TW202340779 A TW 202340779A
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- 239000010410 layer Substances 0.000 claims abstract description 91
- 239000000758 substrate Substances 0.000 claims abstract description 46
- 239000012792 core layer Substances 0.000 claims abstract description 30
- 229910052751 metal Inorganic materials 0.000 claims abstract description 23
- 239000002184 metal Substances 0.000 claims abstract description 23
- 238000005253 cladding Methods 0.000 claims abstract description 16
- 230000003287 optical effect Effects 0.000 claims description 153
- 239000013307 optical fiber Substances 0.000 claims description 16
- 230000008878 coupling Effects 0.000 claims description 14
- 238000010168 coupling process Methods 0.000 claims description 14
- 238000005859 coupling reaction Methods 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000013021 overheating Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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Images
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4274—Electrical aspects
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
- G02B6/4214—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical element having redirecting reflective means, e.g. mirrors, prisms for deflecting the radiation from horizontal to down- or upward direction toward a device
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
- G02B6/4236—Fixing or mounting methods of the aligned elements
- G02B6/424—Mounting of the optical light guide
Abstract
Description
本發明是有關於一種電子裝置。The invention relates to an electronic device.
因應5G高頻高速之發展,元件的尺寸小,且I/O數高。隨著線路密集度的提高,在處理大量電子訊號時,不僅會產生大量的熱源,也會有嚴重的訊號損失。因此若是使用電子訊號進行傳遞,裝置過熱以及訊號損失之問題是長久以來需克服的問題。In response to the development of high-frequency and high-speed 5G, the size of components is small and the number of I/Os is high. As the density of circuits increases, when processing a large number of electronic signals, not only will a large number of heat sources be generated, but there will also be serious signal loss. Therefore, if electronic signals are used for transmission, the problems of device overheating and signal loss have long been problems that need to be overcome.
本發明提供一種電子裝置,避免了裝置過熱以及訊號損失的問題。The present invention provides an electronic device that avoids the problems of device overheating and signal loss.
根據本發明一實施例,提供一種電子裝置,包括至少一發光元件、至少一IC晶片、基板、光波導層以及至少一光訊號出口。至少一IC晶片配置以控制至少一發光元件發出光訊號。至少一發光元件配置於基板的第一表面上,至少一IC晶片配置於基板的第二表面上。光波導層配置於基板的第一表面上,且光波導層包括核心層、包覆層以及金屬層。金屬層配置於核心層以及包覆層之間的交界面的至少一部份上。至少一光訊號出口對應至少一發光元件,且光訊號在核心層傳遞後到達至少一光訊號出口。According to an embodiment of the present invention, an electronic device is provided, including at least one light-emitting element, at least one IC chip, a substrate, an optical waveguide layer and at least one optical signal outlet. At least one IC chip is configured to control at least one light emitting element to emit light signals. At least one light-emitting element is arranged on the first surface of the substrate, and at least one IC chip is arranged on the second surface of the substrate. The optical waveguide layer is disposed on the first surface of the substrate, and includes a core layer, a cladding layer and a metal layer. The metal layer is disposed on at least a part of the interface between the core layer and the cladding layer. At least one optical signal outlet corresponds to at least one light-emitting element, and the optical signal reaches the at least one optical signal outlet after being transmitted in the core layer.
在一實施例中,核心層的折射率大於包覆層的折射率。In one embodiment, the refractive index of the core layer is greater than the refractive index of the cladding layer.
在一實施例中,部分金屬層環繞至少一發光元件。In one embodiment, a portion of the metal layer surrounds at least one light-emitting element.
在一實施例中,至少一光訊號出口配置於光波導層的側表面上。In one embodiment, at least one optical signal outlet is disposed on a side surface of the optical waveguide layer.
在一實施例中,至少一光訊號出口配置於光波導層的正表面上。In one embodiment, at least one optical signal outlet is disposed on the front surface of the optical waveguide layer.
在一實施例中,至少一光訊號出口的數量為多個,多個光訊號出口中的一者配置於光波導層的正表面上,且多個光訊號出口中的另一者配置於光波導層的側表面上。In one embodiment, the number of at least one optical signal outlet is multiple, one of the multiple optical signal outlets is disposed on the front surface of the optical waveguide layer, and the other one of the multiple optical signal outlets is disposed on the optical waveguide layer. on the side surface of the waveguide layer.
在一實施例中,核心層被圖案化,至少一發光元件的數量為多個,且至少一光訊號出口的數量為一個。In one embodiment, the core layer is patterned, the number of at least one light-emitting element is multiple, and the number of at least one optical signal outlet is one.
在一實施例中,電子裝置還包括重分佈層,配置於基板以及至少一IC晶片之間。In one embodiment, the electronic device further includes a redistribution layer disposed between the substrate and at least one IC chip.
在一實施例中,基板具備至少一通孔,且所述至少一光訊號出口位於通孔內。In one embodiment, the substrate has at least one through hole, and the at least one optical signal outlet is located in the through hole.
在一實施例中,電子裝置還包括光耦合元件以及光纖,光耦合元件配置於至少一光訊號出口且連接光纖,以將至少一發光元件發出的光訊號耦合入光纖。In one embodiment, the electronic device further includes an optical coupling element and an optical fiber. The optical coupling element is disposed at at least one optical signal outlet and connected to the optical fiber to couple the optical signal emitted by the at least one light-emitting element into the optical fiber.
在一實施例中,電子裝置還包括光接收器,連接光纖,並將光訊號轉換成電訊號。In one embodiment, the electronic device further includes an optical receiver connected to the optical fiber and converting the optical signal into an electrical signal.
在一實施例中,基板具備至少一凹槽,配置於第一表面上,且至少一發光元件配置於至少一凹槽的底面上。In one embodiment, the substrate has at least one groove disposed on the first surface, and at least one light-emitting element is disposed on the bottom surface of the at least one groove.
在一實施例中,電子裝置還包括反射層,配置於至少一凹槽的斜側面上,且環繞至少一發光元件。In one embodiment, the electronic device further includes a reflective layer disposed on an inclined side surface of at least one groove and surrounding at least one light-emitting element.
在一實施例中,反射層與金屬層以相同的材料構成。In one embodiment, the reflective layer and the metal layer are made of the same material.
基於上述,本發明實施例提供的電子裝置利用光電轉換方式,將IC晶片的電訊號藉由發光元件轉換成光訊號,光訊號在光波導層中傳遞,再利用光接收器將光訊號轉換成電訊號。光訊號能以全反射方式在光波導層傳遞,耗損低,且其傳遞速度快,並能同時傳遞多段頻率,且不會產生熱,更能符合5G高頻高速之需求。Based on the above, the electronic device provided by the embodiment of the present invention uses a photoelectric conversion method to convert the electrical signal of the IC chip into an optical signal through the light-emitting element. The optical signal is transmitted in the optical waveguide layer, and then the optical receiver is used to convert the optical signal into electrical signal. Optical signals can be transmitted through the optical waveguide layer in a total reflection manner, with low loss, high transmission speed, and the ability to transmit multiple frequencies at the same time without generating heat, which can better meet the high-frequency and high-speed requirements of 5G.
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。In order to make the above-mentioned features and advantages of the present invention more obvious and easy to understand, embodiments are given below and described in detail with reference to the accompanying drawings.
參照圖1A及圖1B,圖1A是根據本發明一實施例的電子裝置的橫截面示意圖,圖1B是圖1A所示電子裝置的部分結構透視圖。具體而言,圖1A對應圖1B的線I-I’。Referring to FIGS. 1A and 1B , FIG. 1A is a schematic cross-sectional view of an electronic device according to an embodiment of the present invention, and FIG. 1B is a perspective view of a partial structure of the electronic device shown in FIG. 1A . Specifically, FIG. 1A corresponds to line I-I' of FIG. 1B.
電子裝置1包括發光元件10、IC晶片20、光波導層100、基板200以及光訊號出口10P。IC晶片20被配置以控制發光元件10發出光訊號10L。發光元件10配置於基板200的第一表面201上,IC晶片20配置於基板200的第二表面202上。光波導層100配置於基板200的第一表面201上,其具有相對二正表面100a、100b,且光波導層100包括核心層101、包覆層102以及金屬層103。光訊號出口10P對應發光元件10。基板200不侷限有機基板、無機矽基板或其他。The
在一實施例中,發光元件10可以直接連接IC晶片20以發出光訊號10L。在本實施例中,基板200以及IC晶片20之間配置有重分佈層(Redistribution Layer)300。重分佈層300是透過晶圓級金屬重新佈線製程和導電凸塊製程來形成。重分佈層300被配置以改變IC晶片20的接點(如I/O 接墊)位置,使小尺寸的IC晶片20能進一步連接其他多個元件或一個元件。具體而言,發光元件10透過貫穿基板200的導電柱10E電性連接重分佈層300上的導電接墊300B,以進一步電性連接IC晶片20。IC晶片20根據所要傳遞的電訊號驅動發光元件10發出光訊號10L,使光訊號10L具有IC晶片20要傳遞的電訊號的資訊。對應不同IC晶片20的光訊號10L所攜帶的資訊不同。對應不同IC晶片20的光訊號10L可以是不同波長的光,也可以是同波長的光。In one embodiment, the light-emitting
光訊號出口10P位於光波導層100的一正表面100a,且被基板200所覆蓋。但是本發明不以此為限,在其他實施例中,光訊號出口10P不被基板200所覆蓋(圖未示)。The
在本實施例中,圖1A對應圖1B的線I-I’。也就是說,圖1A繪示了以圖1B的光訊號出口10P為中心且延著第一方向D1的橫截面示意圖。應當說明的是,圖1A也可以是以圖1B的光訊號出口10P為中心且延著第二方向D2的橫截面示意圖,其中第二方向D2垂直第一方向D1,且第三方向D3垂直第一方向D1及第二方向D2。圖1A也可以是以圖1B的光訊號出口10P為中心且延著與第一方向D1之間具有夾角45度的方向的橫截面示意圖。另外,圖1A也可以是以圖1B的光訊號出口10P為中心且延著與第一方向D1之間具有不特定夾角的方向的橫截面示意圖。具體而言,電子裝置1的核心層101被圖案化,多個發光元件10皆對應同一個光訊號出口10P。但是本發明不以此為限,在其他實施例中,一個光訊號出口10P可以僅對應一個發光元件10。In this embodiment, FIG. 1A corresponds to line I-I' of FIG. 1B. That is to say, FIG. 1A shows a schematic cross-sectional view centered on the
在本實施中,自發光元件10發出的光訊號10L在光波導層100內傳遞,且核心層101的折射率大於包覆層102的折射率,以利光訊號10L在核心層101內能以全反射的形式傳遞至光訊號出口10P。金屬層103配置於核心層101以及包覆層102之間的部份交界面上,以確保光訊號10L被金屬層103反射並朝光訊號出口10P傳遞。金屬層103以具有高反射率的金屬構成,例如鋁、銀或其合金。但是本發明不以此為限,在一些實施例中,核心層101的折射率可以小於或等於包覆層102的折射率,且金屬層103配置於核心層101以及包覆層102之間的所有交界面上,在這樣的情況下,光訊號10L藉由被金屬層103多次反射,朝光訊號出口10P傳遞。In this implementation, the
在本實施例中,部分金屬層103環繞發光元件10且相對於第一表面201傾斜配置,確保發光元件10發出的光訊號10L朝核心層101以及光訊號出口10P傳遞,而不會朝重分佈層300及IC晶片20漏光。此外,基板200以透明材質構成(例如玻璃或軟性透明基板),使得在核心層101中傳遞至基板200的光訊號10L得以穿透基板200,朝光訊號出口10P傳遞。In this embodiment, part of the
為了充分說明本發明的各種實施態樣,將在下文描述本發明的其他實施例。在此必須說明的是,下述實施例沿用前述實施例的元件標號與部分內容,其中採用相同的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例,下述實施例不再重複贅述。In order to fully explain various implementation aspects of the invention, other embodiments of the invention will be described below. It must be noted here that the following embodiments follow the component numbers and part of the content of the previous embodiments, where the same numbers are used to represent the same or similar elements, and descriptions of the same technical content are omitted. For descriptions of omitted parts, reference may be made to the foregoing embodiments and will not be repeated in the following embodiments.
參照圖2,其繪示根據本發明實施例的電子裝置的橫截面示意圖。電子裝置2與電子裝置1不同在於,電子裝置2的光訊號出口10P1以及光訊號出口10P2分別對應一個發光元件10。光波導層100具有相對二正表面100a、100b及相對二側表面100c、100d,並且,光訊號出口10P1位於光波導層100的一側表面100c,光訊號出口10P2位於光波導層100的一正表面100a。Referring to FIG. 2 , a schematic cross-sectional view of an electronic device according to an embodiment of the present invention is shown. The
參照圖3,其繪示根據本發明實施例的電子裝置的橫截面示意圖。電子裝置3與電子裝置1不同在於,電子裝置3的光訊號出口10P3以及光訊號出口10P4分別對應一個發光元件10,其中,光訊號出口10P3及光訊號出口10P4分別位於光波導層100的相對二側表面100c、100d。此外,金屬層103配置於核心層101以及包覆層102之間的所有交界面上。光訊號10L藉由被金屬層103多次反射,朝光訊號出口10P3及10P4傳遞。Referring to FIG. 3 , a schematic cross-sectional view of an electronic device according to an embodiment of the present invention is shown. The
參照圖4,其繪示根據本發明一實施例的電子裝置的示意圖。相對於電子裝置1,電子裝置4還包括光處理系統400,光處理系統400包括光耦合元件401、光纖402以及光接收器403。如圖4所示,電子裝置4的光訊號出口10P5在光波導層100的一側表面100c,光訊號出口10P6位於光波導層100的一正表面100a,且分別對應配置有光耦合元件401。與光訊號出口10P5對應的光耦合元件401配置於光訊號出口10P5。與光訊號出口10P6對應的光耦合元件401配置於重分佈層300上,且朝向光訊號出口10P6。每一個光耦合元件401連接光纖402,以將發光元件10發出的光訊號10L耦合入光纖402,進一步傳遞至連接在光纖402另一端的光接收器403。光接收器403或其後端的處理器將光訊號10L轉換成電訊號,獲得對應的IC晶片20所要傳遞的電訊號。本實施例中,光訊號出口10P6不被基板200所覆蓋。但是本發明不以此為限,在其他實施例中,光訊號出口10P6可被基板200所覆蓋 (圖未示)。在其他實施例中,光訊號出口10P6可被基板200及重分佈層300所覆蓋 (圖未示)。Referring to FIG. 4 , a schematic diagram of an electronic device according to an embodiment of the present invention is shown. Relative to the
應當說明的是,在本實施例中,每一發光元件10分別對應不同的光耦合元件401及光纖402。但是本發明不以此為限,在其他實施例中,不同的發光元件10也可以對應相同的光耦合元件401及光纖402。以圖1A及圖1B所繪示的電子裝置1為例,可以在對應多個發光元件10的光訊號出口10P處配置一個光耦合元件401,這個光耦合元件401連接一條光纖402以及一個光接收器403。It should be noted that in this embodiment, each light-emitting
無論是多個發光元件10對應一個光處理系統400或多個發光元件10分別對應多個光處理系統400。不同的發光元件10發出的光訊號10L可以具有相同的波長,也可以具有不同的波長。當不同的發光元件10發出的光訊號10L具有相同的波長,可以藉由對各個光訊號10L進行調變(Modulation)來區別不同發光元件10發出的光訊號10L。Whether multiple light-emitting
相較於電子裝置1,電子裝置4的基板200可以具有通孔200H,通孔200H對應一個發光元件10,且光訊號出口10P6位於通孔200H內。在核心層101中傳遞的光訊號10L得以穿過通孔200H,朝光訊號出口10P6傳遞。Compared with the
雖然圖4僅示意地繪示了一個通孔200H,但是本發明不以此為限。在一些實施例中,電子裝置4可以具有多個通孔200H,分別對應多個發光元件10。在一些實施例中,一個通孔200H也可以對應多個發光元件10。以圖1A所繪示的電子裝置1為例,可以移除核心層101與光訊號出口10P之間的部份基板200,使基板200在核心層101與光訊號出口10P之間具有通孔(未繪示),使得來自不同發光元件10且在核心層101中傳遞的光訊號10L得以穿過此通孔(未繪示),直接朝光訊號出口10P傳遞。Although FIG. 4 schematically illustrates only one through
電子裝置4的基板200還可以具有凹槽200G,配置於第一表面201上,發光元件10配置於凹槽200G的底面上。並且,電子裝置4還包括反射層200R,反射層200R配置於凹槽200G的斜側面(oblique side surface)上,且環繞發光元件10。反射層200R可以與光波導層100的金屬層103以相同的材料構成,也可以不同的材料構成。環繞發光元件10且相對於第一表面201傾斜配置的反射層200R可以確保發光元件10發出的光訊號10L朝核心層101以及光訊號出口10P5及10P6傳遞,而不會朝基板200、重分佈層300及IC晶片20漏光。The
上述實施例中的發光元件10可以雷射二極體或發光二極體來實現,並以晶粒的形式直接埋設於基板200與光波導層100之間,而不需以封裝樹脂封裝晶粒。由於發光元件10埋設於基板200與光波導層100之間,其不會佔用重分佈層300遠離基板200的表面,該表面得以配置其他電子元件,提高電子裝置1、2、3及4的功能性。The light-emitting
綜上所述,本發明實施例提供的電子裝置利用光電轉換方式,將IC晶片的電訊號藉由發光元件轉換成光訊號,光訊號在光波導層中傳遞,再利用光接收器將光訊號轉換成電訊號。光訊號能以全反射方式在光波導層傳遞,耗損低,且其傳遞速度快,並能同時傳遞多段頻率,且不會產生熱,更能符合5G高頻高速之需求。To sum up, the electronic device provided by the embodiment of the present invention uses a photoelectric conversion method to convert the electrical signal of the IC chip into an optical signal through the light-emitting element. The optical signal is transmitted in the optical waveguide layer, and then the optical signal is converted by the optical receiver. converted into electrical signals. Optical signals can be transmitted through the optical waveguide layer in a total reflection manner, with low loss, high transmission speed, and the ability to transmit multiple frequencies at the same time without generating heat, which can better meet the high-frequency and high-speed requirements of 5G.
1、2、3、4:電子裝置
10:發光元件
10E:導電柱
10L:光訊號
10P、10P1、10P2、10P3、10P4、10P5、10P6:光訊號出口
20:IC晶片
100:光波導層
100a、100b:正表面
100c、100d:側表面
101:核心層
102:包覆層
103:金屬層
200:基板
200G:凹槽
200H:通孔
200R:反射層
201:第一表面
202:第二表面
300:重分佈層
300B:導電接墊
400:光處理系統
401:光耦合元件
402:光纖
403:光接收器
D1、D2、D3:方向
1, 2, 3, 4: Electronic devices
10:Light-emitting
圖1A是根據本發明一實施例的電子裝置的橫截面示意圖。 圖1B是圖1A所示電子裝置的部分結構透視圖。 圖2及圖3是根據本發明實施例的電子裝置的橫截面示意圖。 圖4是根據本發明一實施例的電子裝置的示意圖。 1A is a schematic cross-sectional view of an electronic device according to an embodiment of the present invention. FIG. 1B is a perspective view of a partial structure of the electronic device shown in FIG. 1A. 2 and 3 are cross-sectional schematic diagrams of an electronic device according to embodiments of the present invention. FIG. 4 is a schematic diagram of an electronic device according to an embodiment of the present invention.
1:電子裝置 1: Electronic devices
10:發光元件 10:Light-emitting components
10E:導電柱 10E: Conductive pillar
10L:光訊號 10L:Light signal
10P:光訊號出口 10P: Optical signal outlet
20:IC晶片 20:IC chip
100:光波導層 100: Optical waveguide layer
100a、100b:正表面 100a, 100b: front surface
101:核心層 101:Core layer
102:包覆層 102: Cladding
103:金屬層 103:Metal layer
200:基板 200:Substrate
201:第一表面 201: First surface
202:第二表面 202: Second surface
300:重分佈層 300:Redistribution layer
300B:導電接墊 300B: Conductive pad
D1、D3:方向 D1, D3: direction
Claims (14)
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