TW202337695A - Metal-clad laminate, circuit board, multilayer circuit board and method of manufacturing the same excellent in dimensional stability of a conductor circuit - Google Patents

Metal-clad laminate, circuit board, multilayer circuit board and method of manufacturing the same excellent in dimensional stability of a conductor circuit Download PDF

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TW202337695A
TW202337695A TW112121676A TW112121676A TW202337695A TW 202337695 A TW202337695 A TW 202337695A TW 112121676 A TW112121676 A TW 112121676A TW 112121676 A TW112121676 A TW 112121676A TW 202337695 A TW202337695 A TW 202337695A
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adhesive layer
layer
diamine
circuit board
adhesive
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TW112121676A
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鈴木智之
須藤芳樹
安藤智典
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日商日鐵化學材料股份有限公司
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/0313Organic insulating material
    • H05K1/0353Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement
    • H05K1/036Multilayers with layers of different types
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/04Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/08Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04Interconnection of layers
    • B32B7/12Interconnection of layers using interposed adhesives or interposed materials with bonding properties
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02Non-macromolecular additives
    • C09J11/04Non-macromolecular additives inorganic
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/08Macromolecular additives
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J179/00Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09J161/00 - C09J177/00
    • C09J179/04Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J179/00Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09J161/00 - C09J177/00
    • C09J179/04Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C09J179/08Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/0313Organic insulating material
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/46Manufacturing multilayer circuits
    • H05K3/4611Manufacturing multilayer circuits by laminating two or more circuit boards
    • H05K3/4626Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/46Manufacturing multilayer circuits
    • H05K3/4644Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
    • H05K3/4652Adding a circuit layer by laminating a metal foil or a preformed metal foil pattern
    • H05K3/4655Adding a circuit layer by laminating a metal foil or a preformed metal foil pattern by using a laminate characterized by the insulating layer
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00Electrical equipment
    • B32B2457/08PCBs, i.e. printed circuit boards
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2205/00Polymer mixtures characterised by other features
    • C08L2205/03Polymer mixtures characterised by other features containing three or more polymers in a blend
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2479/00Presence of polyamine or polyimide
    • C09J2479/08Presence of polyamine or polyimide polyimide
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01Dielectrics
    • H05K2201/0137Materials
    • H05K2201/0154Polyimide

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Laminated Bodies (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Adhesive Tapes (AREA)

Abstract

This invention provides a metal-clad laminate, a circuit board, a multilayer circuit board and a method of manufacturing the same. Provided is a multilayer circuit board which is excellent in dimensional stability of a conductor circuit and has an adhesive layer capable of reducing transmission loss even in transmission of a high-frequency signal. A circuit board (101) includes: an insulating resin layer (10); a conductor circuit layer (50) laminated on one surface of the insulating resin layer (10); and an adhesive layer (30) laminated on the other surface of the insulating resin layer (10). A multilayer circuit board (200) is produced by a method as follows: superimposing an adhesive layer (30) of a first circuit board (101) face to face with a conductor circuit layer (50) of a second circuit board (101), superimposing an adhesive layer (30) of the second circuit board (101) face to face with a conductor circuit layer (50) of any circuit board (110) having no adhesive layer (30), and collectively pressing the same.

Description

多層電路基板的製造方法Manufacturing method of multilayer circuit substrate

本發明是有關於一種覆金屬積層板及電路基板以及具有積層為多層的導體電路層的多層電路基板及其製造方法。The present invention relates to a metal-clad laminated board and a circuit substrate, a multilayer circuit substrate having a plurality of conductor circuit layers laminated, and a manufacturing method thereof.

近年來,隨著電子機器的高密度化、高功能化的進展,要求具有進一步的尺寸穩定性或優異的高頻特性的電路基板材料。尤其是,對於高速信號處理所需要的有機層間絕緣材料的特性而言,重要的是低介電常數化、低介電損耗化。為了應對高頻化,提出有將以低介電常數、低介電損耗正切為特徵的液晶聚合物(Liquid Crystal Polymer,LCP)製成電介質層的多層配線板(例如,專利文獻1)。將液晶聚合物製成絕緣層的多層配線板是通過如下方式製造:在加熱至作為熱塑性樹脂的液晶聚合物基材的熔點附近的狀態下,進行加熱壓接,因此,容易因液晶聚合物基材的熱變形而引起電路導體的位置偏移,並存在如下擔憂:阻抗(impedance)不匹配等而對電特性造成不良影響。另外,將液晶聚合物製成基材層的多層配線板在多層黏接界面平滑時,並未顯現出錨固效果,層間黏接力不充分,因此,需要對電路導體與液晶聚合物基材的各自的表面進行粗糙化處理,也存在製造步驟繁雜的問題點。In recent years, as electronic devices have become more dense and functional, circuit board materials with further dimensional stability or excellent high-frequency characteristics have been required. In particular, low dielectric constant and low dielectric loss are important for the properties of organic interlayer insulating materials required for high-speed signal processing. In order to cope with the increase in frequency, a multilayer wiring board has been proposed in which a dielectric layer is made of a liquid crystal polymer (LCP) characterized by low dielectric constant and low dielectric loss tangent (for example, Patent Document 1). A multilayer wiring board in which liquid crystal polymer is used as an insulating layer is produced by heating and press-bonding the liquid crystal polymer base material as a thermoplastic resin to a state near the melting point of the thermoplastic resin. Therefore, the liquid crystal polymer base material is easily The thermal deformation of the material will cause the position of the circuit conductor to shift, and there are concerns about impedance (impedance) mismatch, etc., which will adversely affect the electrical characteristics. In addition, multi-layer wiring boards that use liquid crystal polymer as the base material layer do not show an anchoring effect when the multi-layer bonding interface is smooth, and the inter-layer adhesion force is insufficient. Therefore, it is necessary to conduct separate inspections of the circuit conductors and the liquid crystal polymer base material. The surface is roughened, and there is also the problem of complicated manufacturing steps.

且說,作為與以聚醯亞胺為主成分的黏接層相關的技術,提出有將交聯聚醯亞胺樹脂應用於覆蓋膜(coverlay film)的黏接劑層中,所述交聯聚醯亞胺樹脂是使以由二聚酸等脂肪族二胺衍生的二胺化合物為原料的聚醯亞胺、與具有至少兩個一級氨基作為官能基的氨基化合物反應而獲得(例如,專利文獻2)。專利文獻2的交聯聚醯亞胺樹脂具有如下優點:不會產生包含環狀矽氧烷化合物的揮發成分、具有優異的焊料耐熱性、且即便在反覆暴露於高溫下的使用環境中也不會使配線層與覆蓋膜的黏接力降低。但是,專利文獻2中,對在高頻信號傳輸中的應用可能性並未進行研究。 [現有技術文獻] [專利文獻] As a technology related to an adhesive layer containing polyimide as a main component, it is proposed to apply a cross-linked polyimide resin to an adhesive layer of a coverlay film. Imide resin is obtained by reacting polyimide, which is a diamine compound derived from an aliphatic diamine such as dimer acid, as a raw material, and an amino compound having at least two primary amino groups as functional groups (for example, patent documents 2). The cross-linked polyimide resin of Patent Document 2 has the following advantages: it does not generate volatile components including cyclic siloxane compounds, has excellent solder heat resistance, and does not generate heat even in a use environment where it is repeatedly exposed to high temperatures. This will reduce the adhesion between the wiring layer and the covering film. However, Patent Document 2 does not examine the possibility of application in high-frequency signal transmission. [Prior art documents] [Patent Document]

[專利文獻1]日本專利特開2005-317953號公報 [專利文獻2]日本專利特開2013-1730號公報 [Patent Document 1] Japanese Patent Application Laid-Open No. 2005-317953 [Patent Document 2] Japanese Patent Application Publication No. 2013-1730

[發明所要解決的問題] 今後,在多層電路基板中,作為用以實現應對高頻信號傳輸的一個方向性,考慮有:一邊維持導體電路的尺寸穩定性,一邊增大絕緣樹脂層或黏接層的合計厚度,由此實現介電特性的改善。為此,在成為多層電路基板的材料的覆金屬積層板或電路基板中,不僅對於這些的材質而且也對這些的結構要求與以前的多層電路基板不同的設計思想。 [Problem to be solved by the invention] In the future, in multilayer circuit boards, as a directionality to cope with high-frequency signal transmission, it is considered to increase the total thickness of the insulating resin layer or adhesive layer while maintaining the dimensional stability of the conductor circuit. Achieve improvements in dielectric properties. For this reason, metal-clad laminates or circuit boards that are used as materials for multilayer circuit boards require different design concepts from those of conventional multilayer circuit boards in terms of not only their materials but also their structures.

因此,本發明的目的為提供一種導體電路的尺寸穩定性優異、且具有即便在高頻信號的傳輸中也可實現傳輸損耗的減低的新穎的結構的多層電路基板。 [解決問題的技術手段] Therefore, an object of the present invention is to provide a multilayer circuit board having a novel structure that is excellent in dimensional stability of a conductor circuit and can reduce transmission loss even in the transmission of high-frequency signals. [Technical means to solve problems]

本發明者等人進行努力研究,結果發現,通過使用特定結構的覆金屬積層板作為多層電路基板的材料,而一邊維持優異的黏接性一邊維持導體電路的尺寸穩定性,同時可應對高頻信號的傳輸,從而完成了本發明。The inventors of the present invention conducted diligent research and found that by using a metal-clad laminate with a specific structure as a material for a multilayer circuit board, it is possible to maintain excellent adhesion while maintaining the dimensional stability of the conductor circuit while also being able to cope with high frequencies. signal transmission, thereby completing the present invention.

即,本發明的覆金屬積層板包括:絕緣樹脂層;金屬層,積層於所述絕緣樹脂層的其中一面;以及黏接層,積層於所述絕緣樹脂層的其中另一面。 另外,本發明的電路基板包括:絕緣樹脂層;導體電路層,形成於所述絕緣樹脂層的其中一面;以及黏接層,積層於所述絕緣樹脂層的其中另一面。 而且,本發明的覆金屬積層板或電路基板中,構成所述黏接層的樹脂為熱塑性樹脂或熱硬化性樹脂,且滿足下述條件(i)~(iii): (i)50℃下的儲存彈性模數為1800 MPa以下; (ii)自180℃至260℃的溫度區域中的儲存彈性模數的最大值為800 MPa以下; (iii)玻璃化轉變溫度(Tg)為180℃以下。 That is, the metal-clad laminated board of the present invention includes: an insulating resin layer; a metal layer laminated on one side of the insulating resin layer; and an adhesive layer laminated on the other side of the insulating resin layer. In addition, the circuit board of the present invention includes: an insulating resin layer; a conductor circuit layer formed on one side of the insulating resin layer; and an adhesive layer laminated on the other side of the insulating resin layer. Furthermore, in the metal-clad laminate or circuit board of the present invention, the resin constituting the adhesive layer is a thermoplastic resin or a thermosetting resin, and satisfies the following conditions (i) to (iii): (i) The storage elastic modulus at 50°C is below 1800 MPa; (ii) The maximum value of the storage elastic modulus in the temperature range from 180°C to 260°C is 800 MPa or less; (iii) The glass transition temperature (Tg) is 180°C or less.

本發明的覆金屬積層板或電路基板中,所述熱塑性樹脂可為含有四羧酸殘基及二胺殘基的黏接性聚醯亞胺。所述情況下,所述黏接性聚醯亞胺可相對於所述二胺殘基的總量100莫耳份而含有50莫耳份以上的由二聚酸型二胺衍生的二胺殘基,所述二聚酸型二胺是二聚酸的兩個末端羧酸基經取代為一級氨基甲基或氨基而成。In the metal-clad laminate or circuit substrate of the present invention, the thermoplastic resin may be an adhesive polyimide containing a tetracarboxylic acid residue and a diamine residue. In this case, the adhesive polyimide may contain 50 mole parts or more of the diamine residue derived from the dimer acid-type diamine with respect to 100 mole parts of the total amount of the diamine residues. group, the dimer acid-type diamine is formed by substituting the two terminal carboxylic acid groups of the dimer acid with primary aminomethyl or amino groups.

本發明的覆金屬積層板可為將所述金屬層加工為配線而成的電路基板的材料。The metal-clad laminated board of the present invention may be a material for a circuit board formed by processing the metal layer into wiring.

本發明的覆金屬積層板或電路基板中,所述黏接性聚醯亞胺可相對於所述四羧酸殘基的總量100莫耳份而含有合計為90莫耳份以上的由下述通式(1)和/或通式(2)所表示的四羧酸酐衍生的四羧酸殘基。In the metal-clad laminate or circuit board of the present invention, the adhesive polyimide may contain a total of 90 mole parts or more of the following based on 100 mole parts of the total amount of the tetracarboxylic acid residues: The tetracarboxylic acid residue derived from the tetracarboxylic anhydride represented by the general formula (1) and/or the general formula (2).

[化1] [Chemical 1]

通式(1)中,X表示單鍵、或選自下式中的二價基,通式(2)中,Y所表示的環狀部分表示形成選自4員環、5員環、6員環、7員環或8員環中的環狀飽和烴基。In the general formula (1), A cyclic saturated hydrocarbon group in a 7-membered ring, 7-membered ring or 8-membered ring.

[化2] [Chemicalization 2]

所述式中,Z表示-C 6H 4-、-(CH 2)n-或-CH 2-CH(-O-C(=O)-CH 3)-CH 2-,n表示1~20的整數。 In the formula, Z represents -C 6 H 4 -, -(CH 2 )n- or -CH 2 -CH(-OC(=O)-CH 3 )-CH 2 -, and n represents an integer from 1 to 20 .

本發明的覆金屬積層板或電路基板中,所述黏接性聚醯亞胺可相對於所述二胺殘基的總量100莫耳份而在50莫耳份以上且99莫耳份以下的範圍內含有由所述二聚酸型二胺衍生的二胺殘基,並且,可在1莫耳份以上且50莫耳份以下的範圍內含有由選自下述通式(B1)~通式(B7)所表示的二胺化合物中的至少一種二胺化合物衍生的二胺殘基。In the metal-clad laminate or circuit board of the present invention, the adhesive polyimide may be at least 50 mole parts and not more than 99 mole parts relative to 100 mole parts of the total amount of the diamine residues. The diamine residue derived from the dimer acid-type diamine may be contained within the range of 1 molar part or more and 50 molar parts or less selected from the group consisting of the following general formula (B1) to A diamine residue derived from at least one diamine compound among the diamine compounds represented by general formula (B7).

[化3] [Chemical 3]

式(B1)~式(B7)中,R 1獨立地表示碳數1~6的一價烴基或烷氧基,連結基A獨立地表示選自-O-、-S-、-CO-、-SO-、-SO 2-、-COO-、-CH 2-、-C(CH 3) 2-、-NH-或-CONH-中的二價基,n 1獨立地表示0~4的整數;其中,自式(B3)中去除與式(B2)重複的部分,自式(B5)中去除與式(B4)重複的部分。 In the formulas (B1) to (B7), R 1 independently represents a monovalent hydrocarbon group or an alkoxy group having 1 to 6 carbon atoms, and the linking group A independently represents a group selected from -O-, -S-, -CO-, The divalent group in -SO-, -SO 2 -, -COO-, -CH 2 -, -C(CH 3 ) 2 -, -NH- or -CONH-, n 1 independently represents an integer from 0 to 4 ; Among them, the part that is repeated with the formula (B2) is removed from the formula (B3), and the part that is repeated with the formula (B4) is removed from the formula (B5).

本發明的多層電路基板是積層多個電路基板而成,且其特徵在於:包含至少一個以上的所述任一電路基板作為所述電路基板。The multilayer circuit board of the present invention is formed by laminating a plurality of circuit boards, and is characterized by including at least one of the circuit boards as the circuit board.

本發明的第一觀點的多層電路基板的製造方法可包括: 準備多個電路基板的步驟,所述電路基板包括絕緣樹脂層、形成於所述絕緣樹脂層的其中一面的導體電路層、以及積層於所述絕緣樹脂層的其中另一面的黏接層;以及 將一個所述電路基板的所述導體電路層、與另一個所述電路基板的所述黏接層以相向的方式重疊壓接的步驟。 The manufacturing method of the multilayer circuit substrate according to the first aspect of the present invention may include: The step of preparing a plurality of circuit substrates, the circuit substrates including an insulating resin layer, a conductor circuit layer formed on one side of the insulating resin layer, and an adhesive layer laminated on the other side of the insulating resin layer; and The step of overlapping and crimping the conductor circuit layer of one of the circuit substrates and the adhesive layer of the other circuit substrate in an opposing manner.

本發明的第二觀點的多層電路基板的製造方法可包括: 準備多個電路基板的步驟,所述電路基板包括絕緣樹脂層、形成於所述絕緣樹脂層的其中一面的導體電路層、以及積層於所述絕緣樹脂層的其中另一面的黏接層;以及 將一個所述電路基板的所述黏接層、與另一個所述電路基板的所述黏接層以相向的方式重疊壓接的步驟。 [發明的效果] The manufacturing method of the multilayer circuit substrate according to the second aspect of the present invention may include: The step of preparing a plurality of circuit substrates, the circuit substrates including an insulating resin layer, a conductor circuit layer formed on one side of the insulating resin layer, and an adhesive layer laminated on the other side of the insulating resin layer; and The step of overlapping and pressing the adhesive layer of one of the circuit substrates and the adhesive layer of the other circuit substrate in a facing manner. [Effects of the invention]

本發明的覆金屬積層板為在絕緣樹脂層的單面具有金屬層、且在絕緣樹脂層的另一單面具有黏接層的結構,因此,可通過進行積層而容易地製造多層電路基板,作為多層電路基板的材料而有用。另外,在使用覆金屬積層板製造多層電路基板的情況下,可一邊維持導體電路的尺寸穩定性,一邊確保對於導體電路層的被覆性與密合性,進而確保樹脂層整體的厚度。因此,通過使用本發明的覆金屬積層板而可獲得具有良好的層間連接、且可靠性高的多層電路基板。 另外,通過本發明的多層電路基板,即便在高頻信號的傳輸中也可減低傳輸損耗,可實現電子零件的高密度積體化、或高密度安裝化。另外,本發明的多層電路基板因耐熱性也優異,因此,也可搭載發熱量大的半導體晶片。 The metal-clad laminated board of the present invention has a structure in which a metal layer is provided on one side of the insulating resin layer and an adhesive layer is provided on the other side of the insulating resin layer. Therefore, a multilayer circuit board can be easily manufactured by laminating. Useful as a material for multilayer circuit boards. In addition, when a multilayer circuit board is manufactured using a metal-clad laminate, the coating and adhesion to the conductor circuit layer can be ensured while maintaining the dimensional stability of the conductor circuit, thereby ensuring the thickness of the entire resin layer. Therefore, by using the metal-clad laminated board of the present invention, a multilayer circuit board having good interlayer connection and high reliability can be obtained. In addition, the multilayer circuit board of the present invention can reduce transmission loss even in the transmission of high-frequency signals, and can realize high-density integration or high-density mounting of electronic components. In addition, since the multilayer circuit board of the present invention is also excellent in heat resistance, it can also mount a semiconductor chip that generates a large amount of heat.

對本發明的實施形態進行詳細說明。Embodiments of the present invention will be described in detail.

[覆金屬積層板] 圖1是表示本發明的一實施形態的覆金屬積層板的結構的剖面圖。本實施形態的覆金屬積層板100包括:絕緣樹脂層10;金屬層20,積層於絕緣樹脂層10的其中一面;以及黏接層30,積層於絕緣樹脂層10的其中另一面。即,覆金屬積層板100為依序積層有金屬層20/絕緣樹脂層10/黏接層30的結構。若使用其他表述,則覆金屬積層板100具有在將絕緣樹脂層10與金屬層20積層而成的單面覆金屬積層板40的背面側(絕緣樹脂層10側)進而附加有黏接層30的結構。再者,黏接層30可形成於絕緣樹脂層10的單面的整面,也可僅形成於一部分。 [metal clad laminate] FIG. 1 is a cross-sectional view showing the structure of a metal-clad laminated board according to an embodiment of the present invention. The metal-clad laminate 100 of this embodiment includes: an insulating resin layer 10; a metal layer 20 laminated on one side of the insulating resin layer 10; and an adhesive layer 30 laminated on the other side of the insulating resin layer 10. That is, the metal-clad laminated board 100 has a structure in which the metal layer 20 / the insulating resin layer 10 / the adhesive layer 30 are laminated in this order. If other expressions are used, the metal-clad laminated board 100 has an adhesive layer 30 added to the back side (the insulating resin layer 10 side) of the single-sided metal-clad laminated board 40 in which the insulating resin layer 10 and the metal layer 20 are laminated. structure. Furthermore, the adhesive layer 30 may be formed on the entire surface of one side of the insulating resin layer 10 , or may be formed on only a part thereof.

<單面覆金屬積層板> 單面覆金屬積層板40的構成並無特別限定,可使用作為柔性印刷配線板(Flexible Printed Circuits,FPC)材料而通常的材料,例如,可為市售的覆銅積層板等。例如,作為市售的覆銅積層板,可使用松下(Panasonic)公司製造的R-F705T(商品名)、日鐵化學&材料公司製造的艾斯帕奈庫斯(Espanex)(商品名)等。 <Single-sided metal clad laminate> The structure of the single-sided metal-clad laminated board 40 is not particularly limited, and a common material that is a flexible printed circuit (FPC) material can be used. For example, a commercially available copper-clad laminated board can be used. For example, as commercially available copper-clad laminated boards, R-F705T (trade name) manufactured by Panasonic Corporation, Espanex (trade name) manufactured by Nippon Steel Chemical & Materials Co., Ltd., etc. can be used .

(金屬層) 金屬層20的材質並無特別限制,例如可列舉:銅、不銹鋼、鐵、鎳、鈹、鋁、鋅、銦、銀、金、錫、鋯、鉭、鈦、鉛、鎂、錳及這些的合金等。這些中,特別優選為銅或銅合金。再者,後述的本實施形態的電路基板中的配線層的材質也與金屬層20相同。 (metal layer) The material of the metal layer 20 is not particularly limited, and examples thereof include: copper, stainless steel, iron, nickel, beryllium, aluminum, zinc, indium, silver, gold, tin, zirconium, tantalum, titanium, lead, magnesium, manganese, and the like. Alloys etc. Among these, copper or a copper alloy is particularly preferred. In addition, the material of the wiring layer in the circuit board of this embodiment which will be described later is also the same as that of the metal layer 20 .

金屬層20的厚度並無特別限定,例如,在使用銅箔等金屬箔的情況下,可優選為35 μm以下,更優選為5 μm~25 μm的範圍內。就生產穩定性及處理性的觀點而言,金屬層的厚度的下限值優選為設為5 μm。再者,在使用銅箔的情況下,可為壓延銅箔也可為電解銅箔。另外,作為銅箔,可使用市售的銅箔。The thickness of the metal layer 20 is not particularly limited. For example, when a metal foil such as copper foil is used, it is preferably 35 μm or less, and more preferably within the range of 5 μm to 25 μm. From the viewpoint of production stability and handleability, the lower limit of the thickness of the metal layer is preferably 5 μm. In addition, when copper foil is used, it may be rolled copper foil or electrolytic copper foil. In addition, as the copper foil, a commercially available copper foil can be used.

另外,金屬箔例如也可實施防銹處理、或以提高黏接力為目的的利用例如板壁(siding)、鋁醇化物、鋁螯合物、矽烷偶合劑等的表面處理。In addition, the metal foil may be subjected to anti-rust treatment, for example, or surface treatment using, for example, siding, aluminum alcoholate, aluminum chelate, silane coupling agent, etc. for the purpose of improving adhesion.

(絕緣樹脂層) 作為絕緣樹脂層10,若包含具有電絕緣性的樹脂,則並無特別限定,例如可列舉:聚醯亞胺、液晶聚合物、環氧樹脂、酚樹脂、聚乙烯、聚丙烯、聚四氟乙烯、矽酮、乙烯四氟乙烯(Ethylene tetrafluoroethylene,ETFE)、雙馬來醯亞胺三嗪(Bismaleimide Triazine,BT)樹脂等,優選為包含聚醯亞胺。再者,本發明中稱為聚醯亞胺的情況除了指聚醯亞胺以外,還指聚醯胺醯亞胺、聚醚醯亞胺、聚酯醯亞胺、聚矽氧烷醯亞胺、聚苯并咪唑醯亞胺等在分子結構中具有醯亞胺基的聚合物。 (Insulating resin layer) The insulating resin layer 10 is not particularly limited as long as it contains an electrically insulating resin. Examples thereof include polyimide, liquid crystal polymer, epoxy resin, phenol resin, polyethylene, polypropylene, and polytetrafluoroethylene. Ethylene, silicone, ethylene tetrafluoroethylene (ETFE), bismaleimide triazine (BT) resin, etc., preferably contain polyimide. In addition, in the present invention, when called polyamide imine, it refers to polyamide imine, polyether imide, polyester imine, and polysiloxane imine in addition to polyamide imine. , polybenzimidazole imine and other polymers with imine groups in their molecular structure.

另外,絕緣樹脂層10並不限於單層,可積層有多個樹脂層。另外,絕緣樹脂層10優選為包含由非熱塑性聚醯亞胺形成的非熱塑性聚醯亞胺層。再者,所謂「非熱塑性聚醯亞胺」,通常為即便加熱軟化也不會顯示出黏接性的聚醯亞胺,在本發明中,是指使用動態黏彈性測定裝置(動態機械分析儀(Dynamic Mechanical Analyzer,DMA))測定的、30℃下的儲存彈性模數為1.0×10 9Pa以上且300℃下的儲存彈性模數為3.0×10 8Pa以上的聚醯亞胺。 In addition, the insulating resin layer 10 is not limited to a single layer, and a plurality of resin layers may be laminated. In addition, the insulating resin layer 10 preferably includes a non-thermoplastic polyimide layer formed of non-thermoplastic polyimide. In addition, the so-called "non-thermoplastic polyimide" is usually a polyimide that does not show adhesiveness even if it is softened by heating. In the present invention, it refers to a polyimide that uses a dynamic viscoelasticity measuring device (dynamic mechanical analyzer). (Dynamic Mechanical Analyzer, DMA)), the storage elastic modulus at 30°C is 1.0×10 9 Pa or more and the storage elastic modulus at 300°C is 3.0×10 8 Pa or more.

絕緣樹脂層10例如可自市售的聚醯亞胺膜、市售的液晶聚合物膜或市售的覆金屬積層板中作為絕緣性基材而使用的樹脂中選擇並使用。作為聚醯亞胺膜,可使用宇部興產公司製造的尤皮萊庫斯(Upilex)(商品名)、東麗杜邦(Toray Dupont)公司製造的卡普頓(Kapton)(商品名)、卡奈卡(Kaneka)公司製造的亞皮卡路(Apical)(商品名)、卡奈卡(Kaneka)公司製造的匹庫西奧(Pixeo)(商品名),作為液晶聚合物膜,可使用可樂麗(Kuraray)公司製造的貝庫斯塔(Vecstar)(商品名)、普拉瑪泰科(Primatech)公司製造的BIAC膜(BIAC Film)(商品名)等。The insulating resin layer 10 can be selected and used from, for example, a commercially available polyimide film, a commercially available liquid crystal polymer film, or a resin used as an insulating base material in a commercially available metal-clad laminate. As the polyimide film, Upilex (trade name) manufactured by Ube Kosan Co., Ltd., Kapton (trade name) manufactured by Toray Dupont Co., Ltd., Kapton Apical (trade name) manufactured by Kaneka Company and Pixeo (trade name) manufactured by Kaneka Company. As the liquid crystal polymer film, Kuraray can be used Vecstar (trade name) manufactured by Kuraray, BIAC Film (trade name) manufactured by Primatech, etc.

絕緣樹脂層10的熱膨脹係數(Coefficient of Thermal Expansion,CTE)並無特別限定,可為10 ppm/K以上、優選為10 ppm/K以上且30 ppm/K以下的範圍內、更優選為15 ppm/K以上且25 ppm/K以下的範圍內。若CTE小於10 ppm/K、或超過30 ppm/K,則產生翹曲、或尺寸穩定性降低。通過適宜變更使用的原料的組合、厚度、乾燥/硬化條件而可控制為所期望的CTE。The thermal expansion coefficient (Coefficient of Thermal Expansion, CTE) of the insulating resin layer 10 is not particularly limited, and may be 10 ppm/K or more, preferably 10 ppm/K or more and 30 ppm/K or less, and more preferably 15 ppm. /K and above and below 25 ppm/K. If the CTE is less than 10 ppm/K or exceeds 30 ppm/K, warpage will occur or dimensional stability will decrease. The desired CTE can be controlled by appropriately changing the combination of raw materials used, thickness, and drying/hardening conditions.

再者,包含絕緣樹脂層10及黏接層30的樹脂層的整體的熱膨脹係數(CTE)並無特別限定,優選為10 ppm/K以上且30 ppm/K以下的範圍內,更優選為15 ppm/K以上且25 ppm/K以下的範圍內。若這些樹脂層整體的CTE小於10 ppm/K、或超過30 ppm/K,則產生翹曲、或尺寸穩定性降低。Furthermore, the coefficient of thermal expansion (CTE) of the entire resin layer including the insulating resin layer 10 and the adhesive layer 30 is not particularly limited, but is preferably in the range of 10 ppm/K or more and 30 ppm/K or less, and more preferably 15. Within the range of ppm/K and above and 25 ppm/K and below. If the CTE of the entire resin layer is less than 10 ppm/K or exceeds 30 ppm/K, warpage occurs or dimensional stability decreases.

絕緣樹脂層10例如在應用於多層電路基板中的情況下,為了抑制介電損耗的惡化,10 GHz下的介電損耗正切(Tanδ)可優選為0.02以下,更優選為0.0005以上且0.01以下的範圍內,進而優選為0.001以上且0.008以下的範圍內。若絕緣樹脂層10的10 GHz下的介電損耗正切超過0.02,則在應用於多層電路基板中時,容易在高頻信號的傳輸路徑上產生電信號的損失等不良情況。另一方面,絕緣樹脂層10的10 GHz下的介電損耗正切的下限值並無特別限制,可考慮作為多層電路基板的絕緣樹脂層的物性控制。For example, when the insulating resin layer 10 is used in a multilayer circuit board, in order to suppress deterioration of dielectric loss, the dielectric loss tangent (Tan δ) at 10 GHz is preferably 0.02 or less, and more preferably 0.0005 or more and 0.01 or less. within the range, and more preferably within the range of 0.001 or more and 0.008 or less. If the dielectric loss tangent of the insulating resin layer 10 at 10 GHz exceeds 0.02, when applied to a multilayer circuit board, problems such as loss of electrical signals will easily occur on the transmission path of high-frequency signals. On the other hand, the lower limit value of the dielectric loss tangent at 10 GHz of the insulating resin layer 10 is not particularly limited, and can be considered as a physical property control of the insulating resin layer of the multilayer circuit board.

絕緣樹脂層10例如在作為多層電路基板的絕緣樹脂層而應用的情況下,為了確保阻抗匹配性,優選為10 GHz下的介電常數(ε)為4.0以下。若絕緣樹脂層10的10 GHz下的介電常數超過4.0,則在應用於多層電路基板中時,導致絕緣樹脂層10的介電損耗的惡化而容易在高頻信號的傳輸路徑上產生電信號的損失等不良情況。When the insulating resin layer 10 is used as an insulating resin layer of a multilayer circuit board, for example, in order to ensure impedance matching, it is preferable that the dielectric constant (ε) at 10 GHz is 4.0 or less. If the dielectric constant of the insulating resin layer 10 at 10 GHz exceeds 4.0, when applied to a multilayer circuit board, the dielectric loss of the insulating resin layer 10 will deteriorate and electrical signals will easily be generated on the transmission path of high-frequency signals. losses and other adverse situations.

<黏接層> 黏接層30包含熱塑性樹脂或熱硬化性樹脂,且滿足以下的條件: (i)50℃下的儲存彈性模數為1800 MPa以下; (ii)自180℃至260℃的儲存彈性模數的最大值為800 MPa以下;以及 (iii)玻璃化轉變溫度(Tg)為180℃以下。 作為此種樹脂,例如可列舉:聚醯亞胺樹脂、聚醯胺樹脂、環氧樹脂、苯氧基樹脂、丙烯酸樹脂、聚氨基甲酸酯樹脂、苯乙烯樹脂、聚酯樹脂、酚樹脂、聚碸樹脂、聚醚碸樹脂、聚苯硫醚樹脂、聚乙烯樹脂、聚丙烯樹脂、矽酮樹脂、聚醚酮樹脂、聚乙烯醇樹脂、聚乙烯醇縮丁醛樹脂、苯乙烯-馬來醯亞胺共聚物、馬來醯亞胺-乙烯基化合物共聚物、或(甲基)丙烯酸共聚物、苯并惡嗪樹脂、雙馬來醯亞胺樹脂及氰酸酯樹脂等樹脂,可自這些中選擇滿足條件(i)~(iii)的樹脂、或者以滿足條件(i)~(iii)的方式進行設計而在黏接層30中使用。 <Adhesive layer> The adhesive layer 30 contains thermoplastic resin or thermosetting resin and meets the following conditions: (i) The storage elastic modulus at 50°C is below 1800 MPa; (ii) The maximum value of the storage elastic modulus from 180°C to 260°C is less than 800 MPa; and (iii) The glass transition temperature (Tg) is 180°C or less. Examples of such resins include polyimide resin, polyamide resin, epoxy resin, phenoxy resin, acrylic resin, polyurethane resin, styrene resin, polyester resin, and phenol resin. Polystyrene resin, polyetherstyrene resin, polyphenylene sulfide resin, polyethylene resin, polypropylene resin, silicone resin, polyetherketone resin, polyvinyl alcohol resin, polyvinyl butyral resin, styrene-male Resins such as imine copolymer, maleimide-vinyl compound copolymer, (meth)acrylic acid copolymer, benzoxazine resin, bismaleimide resin and cyanate ester resin can be purchased from Among these, a resin that satisfies the conditions (i) to (iii) is selected or designed to satisfy the conditions (i) to (iii) and used in the adhesive layer 30 .

在黏接層30為熱硬化性樹脂的情況下,可含有有機過氧化物、硬化劑、硬化促進劑等,視需要也可併用硬化劑與硬化促進劑、或催化劑與助催化劑。只要在可確保所述條件(i)~(iii)的範圍內判斷硬化劑、硬化促進劑、催化劑、助催化劑、及有機過氧化物的添加量、及添加的有無即可。When the adhesive layer 30 is a thermosetting resin, it may contain an organic peroxide, a hardener, a hardening accelerator, etc. If necessary, a hardener and a hardening accelerator, or a catalyst and a cocatalyst may be used in combination. The amount and presence of addition of the hardener, hardening accelerator, catalyst, cocatalyst, and organic peroxide may be determined within a range that ensures the conditions (i) to (iii) described above.

黏接層30如條件(i)、(ii)所示般,50℃下的儲存彈性模數為1800 MPa以下,且自180℃至260℃的溫度區域中的儲存彈性模數的最大值為800 MPa以下。認為此種黏接層30的特性為緩和熱壓接時的內部應力並保持電路加工後的尺寸穩定性的主要原因。另外,黏接層30的所述溫度區域的上限溫度(260℃)下的儲存彈性模數優選為800 MPa以下,更優選為500 MPa以下的範圍內。通過設為此種儲存彈性模數,即便在經過電路加工後的焊料回流步驟後,也難以產生翹曲。As shown in the conditions (i) and (ii), the storage elastic modulus of the adhesive layer 30 at 50°C is 1800 MPa or less, and the maximum value of the storage elastic modulus in the temperature range from 180°C to 260°C is Below 800 MPa. This characteristic of the adhesive layer 30 is considered to be the main reason for alleviating internal stress during thermocompression bonding and maintaining dimensional stability after circuit processing. In addition, the storage elastic modulus of the adhesive layer 30 at the upper limit temperature (260° C.) of the temperature range is preferably 800 MPa or less, and more preferably 500 MPa or less. By setting such a storage elastic modulus, warpage is less likely to occur even after the solder reflow step after circuit processing.

黏接層30如條件(iii)所示般,玻璃化轉變溫度(Tg)可為180℃以下、優選為160℃以下的範圍內。通過將黏接層30的玻璃化轉變溫度設為180℃以下,可進行低溫下的熱壓接,因此,可緩和積層時產生的內部應力而抑制尺寸變化。若黏接層30的Tg超過180℃,則介隔存在於絕緣樹脂層10與任意的電路基板之間而進行黏接時的溫度變高,存在有損尺寸穩定性的擔憂。As shown in the condition (iii), the glass transition temperature (Tg) of the adhesive layer 30 may be in the range of 180°C or lower, preferably 160°C or lower. By setting the glass transition temperature of the adhesive layer 30 to 180° C. or lower, thermocompression bonding at low temperature can be performed. Therefore, internal stress generated during lamination can be relaxed and dimensional changes can be suppressed. If the Tg of the adhesive layer 30 exceeds 180° C., the temperature during bonding between the insulating resin layer 10 and any circuit board becomes high, which may impair dimensional stability.

(黏接層的CTE) 構成黏接層30的熱塑性樹脂或熱硬化性樹脂雖為高熱膨脹性,但為低彈性,且玻璃化轉變溫度低,因此,即便CTE超過30 ppm/K,也可緩和積層時產生的內部應力。因此,黏接層30的CTE優選為35 ppm/K以上,更優選為35 ppm/K以上且200 ppm/K以下的範圍內,進而優選為35 ppm/K以上且150 ppm/K以下的範圍內。通過適宜變更使用的原料的組合、厚度、乾燥/硬化條件,可製成具有所期望的CTE的黏接層30。 (CTE of adhesive layer) Although the thermoplastic resin or thermosetting resin constituting the adhesive layer 30 has high thermal expansion, it has low elasticity and a low glass transition temperature. Therefore, even if the CTE exceeds 30 ppm/K, it can relax the internal stress generated during lamination. . Therefore, the CTE of the adhesive layer 30 is preferably 35 ppm/K or more, more preferably 35 ppm/K or more and 200 ppm/K or less, further preferably 35 ppm/K or more and 150 ppm/K or less. within. By appropriately changing the combination of raw materials used, thickness, and drying/hardening conditions, the adhesive layer 30 having a desired CTE can be produced.

(黏接層的介電損耗正切) 黏接層30例如在應用於多層電路基板中的情況下,為了抑制介質損耗的惡化,10 GHz下的介質損耗正切(Tanδ)可優選為0.004以下、更優選為0.003以下、進而優選為0.002以下。若黏接層30的10 GHz下的介電損耗正切超過0.004,則在應用於多層電路基板中時,容易在高頻信號的傳輸路徑上產生電信號的損失等不良情況。另一方面,黏接層30的10 GHz下的介電損耗正切的下限值並無特別限制。 (Dielectric loss tangent of adhesive layer) For example, when the adhesive layer 30 is used in a multilayer circuit board, in order to suppress deterioration of dielectric loss, the dielectric loss tangent (Tan δ) at 10 GHz is preferably 0.004 or less, more preferably 0.003 or less, and still more preferably 0.002 or less. . If the dielectric loss tangent of the adhesive layer 30 at 10 GHz exceeds 0.004, when applied to a multilayer circuit substrate, problems such as loss of electrical signals will easily occur on the transmission path of high-frequency signals. On the other hand, the lower limit value of the dielectric loss tangent of the adhesive layer 30 at 10 GHz is not particularly limited.

(黏接層的介電常數) 黏接層30例如在應用於多層電路基板中的情況下,為了確保阻抗匹配性,10 GHz下的介電常數優選為4.0以下。若黏接層30的10 GHz下的介電常數超過4.0,則在應用於多層電路基板中時,導致黏接層30的介電損耗的惡化而容易在高頻信號的傳輸路徑上產生電信號的損失等不良情況。 (Dielectric constant of adhesive layer) For example, when the adhesive layer 30 is used in a multilayer circuit board, in order to ensure impedance matching, the dielectric constant at 10 GHz is preferably 4.0 or less. If the dielectric constant of the adhesive layer 30 at 10 GHz exceeds 4.0, when applied to a multilayer circuit substrate, the dielectric loss of the adhesive layer 30 will deteriorate and electrical signals will easily be generated on the transmission path of high-frequency signals. losses and other adverse situations.

(填料) 視需要,黏接層30也可含有填料。作為填料,例如可列舉:二氧化矽、氧化鋁、氧化鎂、氧化鈹、氮化硼、氮化鋁、氮化矽、氟化鋁、氟化鈣、有機次膦酸的金屬鹽等。這些可使用一種或將兩種以上混合使用。 (filler) If necessary, the adhesive layer 30 may also contain filler. Examples of fillers include silica, aluminum oxide, magnesium oxide, beryllium oxide, boron nitride, aluminum nitride, silicon nitride, aluminum fluoride, calcium fluoride, and metal salts of organic phosphinic acid. These may be used alone or in combination of two or more.

(黏接性聚醯亞胺) 其次,列舉構成黏接層30的樹脂為含有四羧酸殘基及二胺殘基的黏接性的熱塑性聚醯亞胺(以下,有時記載為「黏接性聚醯亞胺」)的情況為例,對黏接層30的具體的構成例進行說明。黏接性聚醯亞胺是將使特定的酸酐與二胺化合物進行反應而獲得的前體的聚醯胺酸加以醯亞胺化而製造,因此,通過對酸酐與二胺化合物進行說明,而理解黏接性聚醯亞胺的具體例。再者,在本發明中,所謂四羧酸殘基,是指由四羧酸二酐衍生的四價基,所謂二胺殘基,是指由二胺化合物衍生的二價基。另外,所謂「熱塑性聚醯亞胺」,通常為可明確地確認到玻璃化轉變溫度(Tg)的聚醯亞胺,在本發明中,是指使用DMA測定的、30℃下的儲存彈性模數為1.0×10 8Pa以上且300℃下的儲存彈性模數小於3.0×10 7Pa的聚醯亞胺。 (Adhesive polyimide) Next, the resin constituting the adhesive layer 30 is an adhesive thermoplastic polyimide containing a tetracarboxylic acid residue and a diamine residue (hereinafter, sometimes referred to as "adhesive polyimide"). Taking the case of "polyamide") as an example, a specific structural example of the adhesive layer 30 will be described. Adhesive polyimide is produced by imidizing a precursor polyamide acid obtained by reacting a specific acid anhydride and a diamine compound. Therefore, by describing the acid anhydride and the diamine compound, Understand specific examples of adhesive polyimide. In addition, in the present invention, the tetracarboxylic acid residue refers to a tetravalent group derived from tetracarboxylic dianhydride, and the diamine residue refers to a divalent group derived from a diamine compound. In addition, the so-called "thermoplastic polyimide" is generally a polyimide whose glass transition temperature (Tg) can be clearly confirmed. In the present invention, it refers to the storage elasticity mold at 30°C measured using DMA. A polyimide with a storage elastic modulus of 1.0×10 8 Pa or more and a storage elastic modulus at 300°C less than 3.0×10 7 Pa.

(四羧酸殘基) 黏接性聚醯亞胺優選為相對於所有四羧酸殘基的100莫耳份而含有合計為90莫耳份以上的由下述通式(1)和/或通式(2)所表示的四羧酸酐衍生的四羧酸殘基(以下,有時記載為「四羧酸殘基(1)」、「四羧酸殘基(2)」)。在本發明中,通過相對於所有四羧酸殘基的100莫耳份而含有合計為90莫耳份以上的四羧酸殘基(1)和/或四羧酸殘基(2),而對黏接性聚醯亞胺賦予溶劑可溶性,並且容易實現黏接性聚醯亞胺的柔軟性與耐熱性的並存,因此更優選。若四羧酸殘基(1)和/或四羧酸殘基(2)的合計小於90莫耳份,則存在黏接性聚醯亞胺的溶劑溶解性降低的傾向。 (tetracarboxylic acid residue) The adhesive polyimide preferably contains a total of 90 mole parts or more of polyamides represented by the following general formula (1) and/or general formula (2) based on 100 mole parts of all tetracarboxylic acid residues. A tetracarboxylic acid residue derived from a tetracarboxylic anhydride (hereinafter, may be described as "tetracarboxylic acid residue (1)" or "tetracarboxylic acid residue (2)"). In the present invention, a total of 90 mole parts or more of the tetracarboxylic acid residue (1) and/or the tetracarboxylic acid residue (2) is contained with respect to 100 mole parts of all the tetracarboxylic acid residues. It is more preferable to impart solvent solubility to the adhesive polyimide and to easily achieve the coexistence of flexibility and heat resistance of the adhesive polyimide. If the total amount of the tetracarboxylic acid residue (1) and/or the tetracarboxylic acid residue (2) is less than 90 mole parts, the solvent solubility of the adhesive polyimide tends to decrease.

[化4] [Chemical 4]

通式(1)中,X表示單鍵、或選自下式中的二價基,通式(2)中,Y所表示的環狀部分表示形成選自4員環、5員環、6員環、7員環或8員環中的環狀飽和烴基。In the general formula (1), A cyclic saturated hydrocarbon group in a 7-membered ring, 7-membered ring or 8-membered ring.

[化5] [Chemistry 5]

所述式中,Z表示-C 6H 4-、-(CH 2)n-或-CH 2-CH(-O-C(=O)-CH 3)-CH 2-,n表示1~20的整數。 In the formula, Z represents -C 6 H 4 -, -(CH 2 )n- or -CH 2 -CH(-OC(=O)-CH 3 )-CH 2 -, and n represents an integer from 1 to 20 .

作為用以衍生四羧酸殘基(1)的四羧酸二酐,例如可列舉:3,3',4,4'-聯苯基四羧酸二酐(BPDA)、3,3',4,4'-二苯甲酮四羧酸二酐(BTDA)、3,3',4,4'-二苯基碸四羧酸二酐(DSDA)、4,4'-氧基二鄰苯二甲酸酐(ODPA)、4,4'-(六氟亞異丙基)二鄰苯二甲酸酐(6FDA)、2,2-雙〔4-(3,4-二羧基苯氧基)苯基〕丙烷二酐(BPADA)、對亞苯基雙(偏苯三甲酸單酯酸酐)(TAHQ)、乙二醇雙偏苯三甲酸酐酯(TMEG)等。Examples of the tetracarboxylic dianhydride used to derive the tetracarboxylic acid residue (1) include: 3,3',4,4'-biphenyltetracarboxylic dianhydride (BPDA), 3,3', 4,4'-benzophenone tetracarboxylic dianhydride (BTDA), 3,3',4,4'-diphenyl tetracarboxylic dianhydride (DSDA), 4,4'-oxydiphthalate Phthalic anhydride (ODPA), 4,4'-(hexafluoroisopropylidene)diphthalic anhydride (6FDA), 2,2-bis[4-(3,4-dicarboxyphenoxy) Phenyl]propane dianhydride (BPADA), p-phenylene bis(trimellitic acid monoester anhydride) (TAHQ), ethylene glycol bis-trimellitic anhydride (TMEG), etc.

另外,作為用以衍生四羧酸殘基(2)的四羧酸二酐,例如可列舉:1,2,3,4-環丁烷四羧酸二酐、1,2,3,4-環戊烷四羧酸二酐、1,2,4,5-環己烷四羧酸二酐、1,2,4,5-環庚烷四羧酸二酐、1,2,5,6-環辛烷四羧酸二酐等。In addition, examples of the tetracarboxylic dianhydride used to derive the tetracarboxylic acid residue (2) include: 1,2,3,4-cyclobutane tetracarboxylic dianhydride, 1,2,3,4- Cyclopentanetetracarboxylic dianhydride, 1,2,4,5-cyclohexanetetracarboxylic dianhydride, 1,2,4,5-cycloheptanetetracarboxylic dianhydride, 1,2,5,6 - Cycloctanetetracarboxylic dianhydride, etc.

黏接性聚醯亞胺可在無損發明效果的範圍內含有由所述通式(1)或通式(2)所表示的四羧酸酐以外的酸酐衍生的四羧酸殘基。The adhesive polyimide may contain a tetracarboxylic acid residue derived from an acid anhydride other than the tetracarboxylic acid anhydride represented by the above-mentioned general formula (1) or general formula (2) within the range that does not impair the effects of the invention.

(二胺殘基) 黏接性聚醯亞胺相對於所有二胺殘基的100莫耳份而在50莫耳份以上、例如50莫耳份以上且99莫耳份以下的範圍內、優選為80莫耳份以上、例如80莫耳份以上且99莫耳份以下的範圍內含有由二聚酸型二胺衍生的二聚酸型二胺殘基。通過以所述量含有二聚酸型二胺殘基,可改善黏接層30的介電特性,並且可通過黏接層30的玻璃化轉變溫度的低溫化而改善熱壓接特性及通過低彈性模數化而緩和內部應力。另外,通過將二聚酸型二胺殘基設為50莫耳份以上,可賦予溶劑可溶性與熱塑性,使黏接層30的吸水性降低,例如,減小蝕刻所致的尺寸變化。若相對於所有二胺殘基的100莫耳份而二聚酸型二胺殘基小於50莫耳份,則作為黏接性聚醯亞胺的溶劑可溶性降低。 (diamine residue) The adhesive polyimide is in the range of 50 mole parts or more, for example, 50 mole parts or more and 99 mole parts or less, preferably 80 mole parts or more, based on 100 mole parts of all diamine residues. , for example, the dimer acid-type diamine residue derived from the dimer acid-type diamine is contained in the range of 80 molar parts or more and 99 molar parts or less. By containing the dimer acid-type diamine residue in the above amount, the dielectric properties of the adhesive layer 30 can be improved, and the thermocompression bonding properties can be improved by lowering the glass transition temperature of the adhesive layer 30 and by lowering the glass transition temperature of the adhesive layer 30 . The elastic modulus is changed to relax the internal stress. In addition, by setting the dimer acid-type diamine residue to be 50 mole parts or more, solvent solubility and thermoplasticity can be imparted, thereby reducing the water absorption of the adhesive layer 30, for example, reducing dimensional changes caused by etching. If the dimer acid-type diamine residue is less than 50 mole parts relative to 100 mole parts of all diamine residues, the solvent solubility of the adhesive polyimide decreases.

此處,所謂二聚酸型二胺,是指二聚酸的兩個末端羧酸基(-COOH)經取代為一級氨基甲基(-CH 2-NH 2)或氨基(-NH 2)而成的二胺。二聚酸為通過不飽和脂肪酸的分子間聚合反應而獲得的已知的二元酸,其工業性製造製程在業界已大致標準化,且可利用黏土催化劑等對碳數為11~22的不飽和脂肪酸進行二聚化而獲得。工業性所獲得的二聚酸以通過對油酸或亞油酸等碳數18的不飽和脂肪酸進行二聚化而獲得的碳數36的二元酸為主成分,根據精製的程度而含有任意量的單體酸(碳數18)、三聚酸(碳數54)、碳數20~54的其他聚合脂肪酸。在本發明中,二聚酸優選為使用利用分子蒸餾將二聚酸含量提高至90重量%以上的化合物。另外,在二聚化反應後殘存雙鍵,但在本發明中,二聚酸中也包含進而進行氫化反應而降低不飽和度的化合物。 Here, the so-called dimer acid type diamine means that the two terminal carboxylic acid groups (-COOH) of the dimer acid are substituted with primary aminomethyl (-CH 2 -NH 2 ) or amino groups (-NH 2 ). into diamine. Dimer acid is a known dibasic acid obtained through intermolecular polymerization of unsaturated fatty acids. Its industrial manufacturing process has been roughly standardized in the industry, and unsaturated fatty acids with carbon numbers of 11 to 22 can be produced using clay catalysts, etc. Obtained by dimerization of fatty acids. The dimer acid obtained industrially contains a dibasic acid with a carbon number of 36 obtained by dimerizing an unsaturated fatty acid with a carbon number of 18 such as oleic acid or linoleic acid as the main component, and may contain any amount depending on the degree of purification. Amount of monomeric acid (carbon number 18), trimer acid (carbon number 54), and other polymeric fatty acids with carbon number 20 to 54. In the present invention, the dimer acid is preferably a compound in which the dimer acid content is increased to 90% by weight or more by molecular distillation. In addition, a double bond remains after the dimerization reaction, but in the present invention, the dimer acid also includes a compound that further undergoes a hydrogenation reaction to reduce the degree of unsaturation.

作為二聚酸型二胺的特徵,可對聚醯亞胺賦予源自二聚酸的骨架的特性。即,二聚酸型二胺為分子量約560~620的巨大分子的脂肪族,因此,可增大分子的莫耳體積並相對減少聚醯亞胺的極性基。認為此種二聚酸型二胺的特徵有助於抑制聚醯亞胺的耐熱性的降低並且使介電常數與介電損耗正切減小而提高介電特性。另外,包含兩個自由移動的碳數7~9的疏水鏈、與具有接近碳數18的長度的兩個鏈狀脂肪族氨基,因此,不僅對聚醯亞胺賦予柔軟性,而且也可將聚醯亞胺設為非對稱性化學結構或非平面性化學結構,因此,認為可實現聚醯亞胺的低介電常數化及低介電損耗正切化。As a characteristic of the dimer acid-type diamine, the polyimide can be provided with characteristics derived from the skeleton of the dimer acid. That is, the dimer acid-type diamine is an aliphatic giant molecule with a molecular weight of about 560 to 620. Therefore, the molar volume of the molecule can be increased and the polar groups of the polyimide can be relatively reduced. It is considered that the characteristics of this dimer acid-type diamine help suppress the decrease in heat resistance of polyimide and reduce the dielectric constant and dielectric loss tangent to improve the dielectric properties. In addition, it contains two freely moving hydrophobic chains with 7 to 9 carbon atoms and two chain-shaped aliphatic amino groups with a length close to 18 carbon atoms. Therefore, it not only imparts flexibility to the polyimide, but also can be used as a polyimide. Since polyimide has an asymmetric chemical structure or a non-planar chemical structure, it is considered that the polyimide can achieve low dielectric constant and low dielectric loss tangent.

二聚酸型二胺可獲得市售品,例如可列舉:日本禾達(CRODA Japan)公司製造的普利阿敏(PRIAMINE)1073(商品名)、日本禾達(CRODA Japan)公司製造的普利阿敏(PRIAMINE)1074(商品名)、日本禾達(CRODA Japan)公司製造的普利阿敏(PRIAMINE)1075(商品名)、日本巴斯夫(BASF Japan)公司製造的巴薩敏(Versamine)551(商品名)、日本巴斯夫(BASF Japan)公司製造的巴薩敏(Versamine)552(商品名)等。Dimer acid-type diamines are commercially available, for example, PRIAMINE 1073 (trade name) manufactured by CRODA Japan, PRIAMINE 1073 (trade name) manufactured by CRODA Japan, etc. PRIAMINE 1074 (trade name), PRIAMINE 1075 (trade name) manufactured by CRODA Japan, Versamine 551 manufactured by BASF Japan (trade name), Versamine 552 (trade name) manufactured by BASF Japan, etc.

另外,黏接性聚醯亞胺優選為相對於所有二胺殘基100莫耳份而在合計為1莫耳份以上且50莫耳份以下的範圍內含有由選自下述通式(B1)~通式(B7)所表示的二胺化合物中的至少一種二胺化合物衍生的二胺殘基,更優選為在1莫耳份以上且20莫耳份以下的範圍內含有。通式(B1)~通式(B7)所表示的二胺化合物包含具有彎曲性的分子結構,因此,通過以所述範圍內的量使用選自這些中的至少一種二胺化合物,可提高聚醯亞胺分子鏈的柔軟性而賦予溶劑可溶性與熱塑性。另外,通過使用通式(B1)~通式(B7)所表示的二胺化合物,例如,即便在通過雷射加工而在黏接層30形成導通孔(via hole)(貫通孔)的情況下,通過聚醯亞胺分子結構中的芳香環的比例變高,而可提高例如紫外線區域的吸收性,除此以外,還可提高黏接層30的玻璃化轉變溫度,由此,可提高對於雷射光入射所致的底部金屬的溫度上升而言的耐熱性,因此可進一步提高雷射加工性。若由選自下述通式(B1)~通式(B7)所表示的二胺化合物中的至少一種二胺化合物衍生的二胺殘基的合計量相對於所有二胺殘基的100莫耳份超過50莫耳份,則黏接性聚醯亞胺的柔軟性不足,另外,玻璃化轉變溫度上升,因此,熱壓接所致的殘留應力增加而存在蝕刻後尺寸變化率惡化的傾向。In addition, the adhesive polyimide preferably contains a polyamide selected from the group consisting of the following general formula (B1 ) to the diamine compound represented by general formula (B7), it is more preferable that the diamine residue derived from at least one diamine compound is contained in the range of 1 mole part or more and 20 mole part or less. The diamine compounds represented by the general formulas (B1) to (B7) include a molecular structure having flexibility. Therefore, by using at least one diamine compound selected from these in an amount within the above range, the polymerization rate can be improved. The flexibility of the imine molecular chain imparts solvent solubility and thermoplasticity. In addition, by using the diamine compound represented by the general formula (B1) to the general formula (B7), even when a via hole (through hole) is formed in the adhesive layer 30 by laser processing, for example , by increasing the proportion of aromatic rings in the polyimide molecular structure, the absorbency in the ultraviolet region, for example, can be improved. In addition, the glass transition temperature of the adhesive layer 30 can also be increased, thereby improving the resistance to It is heat resistant to the temperature rise of the base metal caused by laser light incident, so the laser processability can be further improved. If the total amount of diamine residues derived from at least one diamine compound selected from the diamine compounds represented by the following general formula (B1) to general formula (B7) is based on 100 moles of all diamine residues If the amount exceeds 50 molar parts, the flexibility of the adhesive polyimide will be insufficient, and the glass transition temperature will rise. Therefore, the residual stress due to thermocompression bonding will increase and the dimensional change rate after etching will tend to deteriorate.

[化6] [Chemical 6]

式(B1)~式(B7)中,R 1獨立地表示碳數1~6的一價烴基或烷氧基,連結基A獨立地表示選自-O-、-S-、-CO-、-SO-、-SO 2-、-COO-、-CH 2-、-C(CH 3) 2-、-NH-或-CONH-中的二價基,n 1獨立地表示0~4的整數。其中,自式(B3)中去除與式(B2)重複的部分,自式(B5)中去除與式(B4)重複的部分。 再者,所謂「獨立地」,是指在所述式(B1)~式(B7)中的一個中、或兩個以上中,多個連結基A、多個R 1或多個n 1可相同,也可不同。另外,式(B1)~式(B7)中,末端的兩個氨基中的氫原子可經取代,例如可為-NR 2R 3(此處,R 2、R 3獨立地是指烷基等任意的取代基)。 In the formulas (B1) to (B7), R 1 independently represents a monovalent hydrocarbon group or an alkoxy group having 1 to 6 carbon atoms, and the linking group A independently represents a group selected from -O-, -S-, -CO-, The divalent group in -SO-, -SO 2 -, -COO-, -CH 2 -, -C(CH 3 ) 2 -, -NH- or -CONH-, n 1 independently represents an integer from 0 to 4 . Among them, the part that overlaps the formula (B2) is removed from the formula (B3), and the part that overlaps the formula (B4) is removed from the formula (B5). Furthermore, "independently" means that in one, or in two or more of the formulas (B1) to (B7), a plurality of linking groups A, a plurality of R 1 or a plurality of n 1 can be Same or different. In addition, in the formulas (B1) to (B7), the hydrogen atoms in the two terminal amino groups may be substituted, for example, they may be -NR 2 R 3 (here, R 2 and R 3 independently refer to an alkyl group, etc. optional substituents).

式(B1)所表示的二胺(以下,有時記載為「二胺(B1)」)為具有兩個苯環的芳香族二胺。認為所述二胺(B1)通過直接鍵結於至少一個苯環上的氨基與二價連結基A位於間位,而聚醯亞胺分子鏈所具有的自由度增加並具有高的彎曲性,從而有助於聚醯亞胺分子鏈的柔軟性的提高。因此,通過使用二胺(B1),聚醯亞胺的熱塑性提高。此處,作為連結基A,優選為-O-、-CH 2-、-C(CH 3) 2-、-CO-、-SO 2-、-S-、-COO-。 The diamine represented by formula (B1) (hereinafter, may be described as "diamine (B1)") is an aromatic diamine having two benzene rings. It is believed that the diamine (B1) is located in the meta position through the amino group directly bonded to at least one benzene ring and the divalent linking group A, and the polyimide molecular chain has an increased degree of freedom and high flexibility, This helps to improve the flexibility of the polyimide molecular chain. Therefore, by using diamine (B1), the thermoplasticity of polyimide is improved. Here, the coupling group A is preferably -O-, -CH 2 -, -C(CH 3 ) 2 -, -CO-, -SO 2 -, -S-, -COO-.

作為二胺(B1),例如可列舉:3,3'-二氨基二苯基甲烷、3,3'-二氨基二苯基丙烷、3,3'-二氨基二苯基硫醚、3,3'-二氨基二苯基碸、3,3-二氨基二苯基醚、3,4'-二氨基二苯基醚、3,4'-二氨基二苯基甲烷、3,4'-二氨基二苯基丙烷、3,4'-二氨基二苯基硫醚、3,3'-二氨基二苯甲酮、(3,3'-雙氨基)二苯基胺等。Examples of the diamine (B1) include: 3,3'-diaminodiphenylmethane, 3,3'-diaminodiphenylpropane, 3,3'-diaminodiphenyl sulfide, 3, 3'-diaminodiphenyl terine, 3,3-diaminodiphenyl ether, 3,4'-diaminodiphenyl ether, 3,4'-diaminodiphenylmethane, 3,4'- Diaminodiphenylpropane, 3,4'-diaminodiphenyl sulfide, 3,3'-diaminobenzophenone, (3,3'-diamino)diphenylamine, etc.

式(B2)所表示的二胺(以下,有時記載為「二胺(B2)」)為具有三個苯環的芳香族二胺。認為所述二胺(B2)通過直接鍵結於至少一個苯環上的氨基與二價連結基A位於間位,而聚醯亞胺分子鏈所具有的自由度增加並具有高的彎曲性,從而有助於聚醯亞胺分子鏈的柔軟性的提高。因此,通過使用二胺(B2),聚醯亞胺的熱塑性提高。此處,作為連結基A,優選為-O-。The diamine represented by formula (B2) (hereinafter, may be described as "diamine (B2)") is an aromatic diamine having three benzene rings. It is believed that the diamine (B2) is located in the meta position through the amino group directly bonded to at least one benzene ring and the divalent linking group A, and the polyimide molecular chain has an increased degree of freedom and high flexibility, This helps to improve the flexibility of the polyimide molecular chain. Therefore, by using diamine (B2), the thermoplasticity of polyimide is improved. Here, the coupling group A is preferably -O-.

作為二胺(B2),例如可列舉:1,4-雙(3-氨基苯氧基)苯、3-[4-(4-氨基苯氧基)苯氧基]苯胺、3-[3-(4-氨基苯氧基)苯氧基]苯胺等。Examples of the diamine (B2) include: 1,4-bis(3-aminophenoxy)benzene, 3-[4-(4-aminophenoxy)phenoxy]aniline, 3-[3- (4-Aminophenoxy)phenoxy]aniline, etc.

式(B3)所表示的二胺(以下,有時記載為「二胺(B3)」)為具有三個苯環的芳香族二胺。認為所述二胺(B3)通過直接鍵結於一個苯環上的兩個二價連結基A彼此位於間位,而聚醯亞胺分子鏈所具有的自由度增加並具有高的彎曲性,從而有助於聚醯亞胺分子鏈的柔軟性的提高。因此,通過使用二胺(B3),聚醯亞胺的熱塑性提高。此處,作為連結基A,優選為-O-。The diamine represented by formula (B3) (hereinafter, may be described as "diamine (B3)") is an aromatic diamine having three benzene rings. It is believed that the diamine (B3) is located in the meta position with each other through two divalent linking groups A directly bonded to a benzene ring, and the polyimide molecular chain has an increased degree of freedom and high flexibility, This helps to improve the flexibility of the polyimide molecular chain. Therefore, by using diamine (B3), the thermoplasticity of polyimide is improved. Here, the coupling group A is preferably -O-.

作為二胺(B3),例如可列舉:1,3-雙(4-氨基苯氧基)苯(TPE-R)、1,3-雙(3-氨基苯氧基)苯(APB)、4,4'-[2-甲基-(1,3-亞苯基)雙氧基]雙苯胺、4,4'-[4-甲基-(1,3-亞苯基)雙氧基]雙苯胺、4,4'-[5-甲基-(1,3-亞苯基)雙氧基]雙苯胺等。Examples of the diamine (B3) include: 1,3-bis(4-aminophenoxy)benzene (TPE-R), 1,3-bis(3-aminophenoxy)benzene (APB), 4 ,4'-[2-methyl-(1,3-phenylene)dioxy]dianiline, 4,4'-[4-methyl-(1,3-phenylene)dioxy] Dianiline, 4,4'-[5-methyl-(1,3-phenylene)dioxy]dianiline, etc.

式(B4)所表示的二胺(以下,有時記載為「二胺(B4)」)為具有四個苯環的芳香族二胺。認為所述二胺(B4)通過直接鍵結於至少一個苯環上的氨基與二價連結基A位於間位而具有高的彎曲性,從而有助於聚醯亞胺分子鏈的柔軟性的提高。因此,通過使用二胺(B4),聚醯亞胺的熱塑性提高。此處,作為連結基A,優選為-O-、-CH 2-、-C(CH 3) 2-、-SO 2-、-CO-、-CONH-。 The diamine represented by formula (B4) (hereinafter, may be described as "diamine (B4)") is an aromatic diamine having four benzene rings. It is believed that the diamine (B4) has high flexibility because the amino group directly bonded to at least one benzene ring is located in the meta position with the divalent linking group A, thereby contributing to the flexibility of the polyimide molecular chain. improve. Therefore, by using diamine (B4), the thermoplasticity of polyimide is improved. Here, the coupling group A is preferably -O-, -CH 2 -, -C(CH 3 ) 2 -, -SO 2 -, -CO-, -CONH-.

作為二胺(B4),可列舉:雙[4-(3-氨基苯氧基)苯基]甲烷、雙[4-(3-氨基苯氧基)苯基]丙烷、雙[4-(3-氨基苯氧基)苯基]醚、雙[4-(3-氨基苯氧基)苯基]碸、雙[4-(3-氨基苯氧基)]二苯甲酮、雙[4,4'-(3-氨基苯氧基)]苯甲醯苯胺等。Examples of the diamine (B4) include bis[4-(3-aminophenoxy)phenyl]methane, bis[4-(3-aminophenoxy)phenyl]propane, bis[4-(3 -Aminophenoxy)phenyl] ether, bis[4-(3-aminophenoxy)phenyl]terine, bis[4-(3-aminophenoxy)]benzophenone, bis[4, 4'-(3-Aminophenoxy)]benzylaniline, etc.

式(B5)所表示的二胺(以下,有時記載為「二胺(B5)」)為具有四個苯環的芳香族二胺。認為所述二胺(B5)通過直接鍵結於至少一個苯環上的兩個二價連結基A彼此位於間位,而聚醯亞胺分子鏈所具有的自由度增加並具有高的彎曲性,從而有助於聚醯亞胺分子鏈的柔軟性的提高。因此,通過使用二胺(B5),聚醯亞胺的熱塑性提高。此處,作為連結基A,優選為-O-。The diamine represented by formula (B5) (hereinafter, may be described as "diamine (B5)") is an aromatic diamine having four benzene rings. It is believed that the diamine (B5) is located in the meta position with each other through two divalent linking groups A directly bonded to at least one benzene ring, and the polyimide molecular chain has an increased degree of freedom and high flexibility. , thereby helping to improve the flexibility of the polyimide molecular chain. Therefore, by using diamine (B5), the thermoplasticity of polyimide is improved. Here, the coupling group A is preferably -O-.

作為二胺(B5),可列舉4-[3-[4-(4-氨基苯氧基)苯氧基]苯氧基]苯胺、4,4'-[氧基雙(3,1-亞苯基氧基)]雙苯胺等。Examples of the diamine (B5) include 4-[3-[4-(4-aminophenoxy)phenoxy]phenoxy]aniline, 4,4'-[oxybis(3,1-ylidene) phenyloxy)]bisaniline, etc.

式(B6)所表示的二胺(以下,有時記載為「二胺(B6)」)為具有四個苯環的芳香族二胺。認為所述二胺(B6)通過具有至少兩個醚鍵而具有高的彎曲性,從而有助於聚醯亞胺分子鏈的柔軟性的提高。因此,通過使用二胺(B6),聚醯亞胺的熱塑性提高。此處,作為連結基A,優選為-C(CH 3) 2-、-O-、-SO 2-、-CO-。 The diamine represented by formula (B6) (hereinafter, may be described as "diamine (B6)") is an aromatic diamine having four benzene rings. It is thought that the diamine (B6) has high flexibility by having at least two ether bonds, thereby contributing to the improvement of the flexibility of the polyimide molecular chain. Therefore, by using diamine (B6), the thermoplasticity of polyimide is improved. Here, the coupling group A is preferably -C(CH 3 ) 2 -, -O-, -SO 2 -, -CO-.

作為二胺(B6),例如可列舉:2,2-雙[4-(4-氨基苯氧基)苯基]丙烷(BAPP)、雙[4-(4-氨基苯氧基)苯基]醚(BAPE)、雙[4-(4-氨基苯氧基)苯基]碸(BAPS)、雙[4-(4-氨基苯氧基)苯基]酮(BAPK)等。Examples of the diamine (B6) include 2,2-bis[4-(4-aminophenoxy)phenyl]propane (BAPP), bis[4-(4-aminophenoxy)phenyl] Ether (BAPE), bis[4-(4-aminophenoxy)phenyl]phenone (BAPS), bis[4-(4-aminophenoxy)phenyl]ketone (BAPK), etc.

式(B7)所表示的二胺(以下,有時記載為「二胺(B7)」)為具有四個苯環的芳香族二胺。認為所述二胺(B7)在二苯基骨架的兩側分別具有彎曲性高的二價連結基A,因此有助於聚醯亞胺分子鏈的柔軟性的提高。因此,通過使用二胺(B7),聚醯亞胺的熱塑性提高。此處,作為連結基A,優選為-O-。The diamine represented by formula (B7) (hereinafter, may be described as "diamine (B7)") is an aromatic diamine having four benzene rings. The diamine (B7) is considered to have highly flexible divalent linking groups A on both sides of the diphenyl skeleton, thereby contributing to the improvement of the flexibility of the polyimide molecular chain. Therefore, by using diamine (B7), the thermoplasticity of polyimide is improved. Here, the coupling group A is preferably -O-.

作為二胺(B7),例如可列舉雙[4-(3-氨基苯氧基)]聯苯、雙[4-(4-氨基苯氧基)]聯苯等。Examples of the diamine (B7) include bis[4-(3-aminophenoxy)]biphenyl, bis[4-(4-aminophenoxy)]biphenyl, and the like.

黏接性聚醯亞胺可在無損發明效果的範圍內包含由所述二聚酸型二胺及二胺(B1)~二胺(B7)以外的二胺化合物衍生的二胺殘基。The adhesive polyimide may contain a diamine residue derived from a diamine compound other than the dimer acid-type diamine and diamine (B1) to diamine (B7) as long as the effect of the invention is not impaired.

另外,關於黏接性聚醯亞胺,通過選定所述四羧酸殘基及二胺殘基的種類、或含有兩種以上的四羧酸殘基或二胺殘基時的各自的莫耳比,可控制熱膨脹係數、拉伸彈性模數、玻璃化轉變溫度等。另外,在具有多個聚醯亞胺的結構單元的情況下,可以嵌段的形式存在,也可無規地存在,優選為無規地存在。In addition, regarding the adhesive polyimide, the molar value of the adhesive polyimide can be determined by selecting the types of the tetracarboxylic acid residues and diamine residues, or when containing two or more tetracarboxylic acid residues or diamine residues. ratio, the thermal expansion coefficient, tensile elastic modulus, glass transition temperature, etc. can be controlled. In addition, when having a plurality of structural units of polyimide, they may exist in the form of blocks or may exist randomly. Preferably, they may exist randomly.

黏接性聚醯亞胺的醯亞胺基濃度優選為20重量%以下。此處,「醯亞胺基濃度」是指用聚醯亞胺中的醯亞胺基部(-(CO) 2-N-)的分子量除以聚醯亞胺的結構整體的分子量而得的值。若醯亞胺基濃度超過20重量%,則樹脂自身的分子量變小,並且因極性基的增加而低吸濕性也惡化,彈性模數上升。 The amide group concentration of the adhesive polyimide is preferably 20% by weight or less. Here, the "imide group concentration" refers to a value obtained by dividing the molecular weight of the amide imine group (-(CO) 2 -N-) in the polyimide by the molecular weight of the entire structure of the polyimide. . If the acyl imine group concentration exceeds 20% by weight, the molecular weight of the resin itself becomes smaller, the low hygroscopicity deteriorates due to the increase in polar groups, and the elastic modulus increases.

黏接性聚醯亞胺的重量平均分子量例如優選為10,000~400,000的範圍內,更優選為20,000~350,000的範圍內。若重量平均分子量小於10,000,則黏接層30的強度降低而存在容易脆化的傾向。另一方面,若重量平均分子量超過400,000,則黏度過度增加而在塗敷作業時存在容易產生黏接層30的厚度不均、條紋等不良的傾向。The weight average molecular weight of the adhesive polyimide is, for example, preferably in the range of 10,000 to 400,000, and more preferably in the range of 20,000 to 350,000. If the weight average molecular weight is less than 10,000, the strength of the adhesive layer 30 decreases and the adhesive layer 30 tends to become brittle. On the other hand, if the weight average molecular weight exceeds 400,000, the viscosity increases excessively, and defects such as thickness unevenness and streaks of the adhesive layer 30 tend to easily occur during coating operations.

黏接性聚醯亞胺在形成多層電路基板的情況下,被覆任意的電路基板的導體電路層,因此,為了抑制銅的擴散而最優選為經完全醯亞胺化的結構。其中,也可聚醯亞胺的一部分為醯胺酸。關於其醯亞胺化率,可通過使用傅立葉(Fourier)轉換紅外分光光度計(市售品:日本分光製造的FT/IR620)並利用1次反射ATR(衰減全反射(Attenuated Total Reflectance))法測定聚醯亞胺薄膜的紅外線吸收光譜,並且以1015 cm -1附近的苯環吸收體為基準且根據1780 cm -1的源自醯亞胺基的C=O伸縮的吸光度進行算出。 When forming a multilayer circuit board, the adhesive polyimide covers the conductor circuit layer of any circuit board. Therefore, in order to suppress the diffusion of copper, a completely imidized structure is most preferred. Among them, a part of the polyamide imide may be amide acid. Regarding the acyl imidization rate, it can be determined by using a Fourier transform infrared spectrophotometer (commercially available product: FT/IR620 manufactured by JASCO Corporation) and utilizing the primary reflection ATR (Attenuated Total Reflectance) method. The infrared absorption spectrum of the polyimide film was measured and calculated based on the absorbance of 1780 cm -1 derived from C=O stretching of the amide imide group based on the benzene ring absorber near 1015 cm -1 .

(交聯形成) 在黏接性聚醯亞胺具有酮基的情況下,使所述酮基、與具有至少兩個一級氨基作為官能基的氨基化合物的氨基反應而形成C=N鍵,由此可形成交聯結構。通過形成交聯結構,可提高黏接性聚醯亞胺的耐熱性。為了形成具有酮基的聚醯亞胺而優選的四羧酸酐例如可列舉3,3',4,4'-二苯甲酮四羧酸二酐(BTDA),優選的二胺化合物例如可列舉4,4'-雙(3-氨基苯氧基)二苯甲酮(BABP)、1,3-雙[4-(3-氨基苯氧基)苯甲醯基]苯(BABB)等芳香族二胺。 (Cross-linking formation) When the adhesive polyimide has a ketone group, crosslinking can be formed by reacting the ketone group with the amino group of an amino compound having at least two primary amino groups as functional groups to form a C=N bond. structure. By forming a cross-linked structure, the heat resistance of adhesive polyimide can be improved. Examples of preferred tetracarboxylic anhydrides for forming a polyimide having a ketone group include 3,3',4,4'-benzophenone tetracarboxylic dianhydride (BTDA). Examples of preferred diamine compounds include 4,4'-bis(3-aminophenoxy)benzophenone (BABP), 1,3-bis[4-(3-aminophenoxy)benzoyl]benzene (BABB) and other aromatic Diamine.

作為黏接性聚醯亞胺的交聯形成中可使用的氨基化合物,可例示二醯肼化合物、芳香族二胺、脂肪族胺等。這些中,優選為二醯肼化合物。二醯肼化合物以外的脂肪族胺即便在室溫下也容易形成交聯結構,清漆的保存穩定性存在擔憂,另一方面,芳香族二胺為了形成交聯結構而需要設為高溫。在使用二醯肼化合物的情況下,可使清漆的保存穩定性與硬化時間的縮短化並存。作為二醯肼化合物,例如優選為乙二酸二醯肼、丙二酸二醯肼、琥珀酸二醯肼、戊二酸二醯肼、己二酸二醯肼、庚二酸二醯肼、辛二酸二醯肼、壬二酸二醯肼、癸二酸二醯肼、十二烷二酸二醯肼、馬來酸二醯肼、富馬酸二醯肼、二甘醇酸二醯肼、酒石酸二醯肼、蘋果酸二醯肼、鄰苯二甲酸二醯肼、間苯二甲酸二醯肼、對苯二甲酸二醯肼、2,6-萘甲酸二醯肼、4,4-雙苯二醯肼、1,4-萘甲酸二醯肼、2,6-吡啶二酸二醯肼、衣康酸二醯肼等二醯肼化合物。以上的二醯肼化合物可單獨使用,也可將兩種以上混合使用。Examples of amino compounds that can be used for cross-linking formation of adhesive polyimide include dihydrazide compounds, aromatic diamines, aliphatic amines, and the like. Among these, dihydrazide compounds are preferred. Aliphatic amines other than dihydrazide compounds tend to form a cross-linked structure even at room temperature, which raises concerns about the storage stability of the varnish. On the other hand, aromatic diamines require a high temperature in order to form a cross-linked structure. When a dihydrazide compound is used, the storage stability of the varnish and the shortening of the curing time can be achieved at the same time. Preferred examples of the dihydrazide compound include oxalic acid dihydrazide, malonic acid dihydrazide, succinic acid dihydrazide, glutaric acid dihydrazide, adipic acid dihydrazide, and pimelic acid dihydrazide. Suberic acid dihydrazide, azelaic acid dihydrazide, sebacic acid dihydrazide, dodecanedioic acid dihydrazide, maleic acid dihydrazide, fumaric acid dihydrazide, diglycolic acid dihydrazide Hydrazine, dihydrazide tartrate, dihydrazide malate, dihydrazide phthalate, dihydrazide isophthalate, dihydrazide terephthalate, 2,6-naphthoic acid dihydrazide, 4,4 - Dihydrazide compounds such as diphenyl dihydrazide, 1,4-naphthoic acid dihydrazide, 2,6-pyridinedioic acid dihydrazide, and itaconic acid dihydrazide. The above dihydrazide compounds may be used alone, or two or more types may be mixed and used.

黏接性聚醯亞胺可通過如下方式製造:使所述四羧酸二酐與二胺化合物在溶媒中反應並生成聚醯胺酸後進行加熱閉環。例如,使四羧酸二酐與二胺化合物以大致等莫耳溶解於有機溶媒中,在0℃~100℃的範圍內的溫度下攪拌30分鐘~24小時而進行聚合反應,由此,獲得作為黏接性聚醯亞胺的前體的聚醯胺酸。反應時,以生成的前體在有機溶媒中為5重量%~50重量%的範圍內、優選為10重量%~40重量%的範圍內的方式溶解反應成分。作為聚合反應中使用的有機溶媒,例如可列舉:N,N-二甲基甲醯胺(DMF)、N,N-二甲基乙醯胺(DMAc)、N,N-二乙基乙醯胺、N-甲基-2-吡咯烷酮(NMP)、2-丁酮、二甲基亞碸(DMSO)、六甲基磷醯胺、N-甲基己內醯胺、硫酸二甲酯、環己酮、二惡烷、四氫呋喃、二乙二醇二甲醚(diglyme)、三乙二醇二甲醚(triglyme)、甲酚等。也可將這些溶媒併用兩種以上而使用,進而也可併用二甲苯、甲苯之類的芳香族烴。另外,此種有機溶媒的使用量並無特別限制,優選為調整為通過聚合反應而得的聚醯胺酸溶液的濃度為5重量%~50重量%左右的使用量而使用。The adhesive polyamide can be produced by reacting the tetracarboxylic dianhydride and the diamine compound in a solvent to generate polyamide, and then heating and closing the reaction. For example, a tetracarboxylic dianhydride and a diamine compound are dissolved in an organic solvent at approximately equimolar amounts, and the polymerization reaction is performed by stirring at a temperature in the range of 0° C. to 100° C. for 30 minutes to 24 hours. Polyamide acid as a precursor to adhesive polyimide. During the reaction, the reaction components are dissolved in the organic solvent so that the resulting precursor is in the range of 5% to 50% by weight, preferably in the range of 10% to 40% by weight. Examples of the organic solvent used in the polymerization reaction include N,N-dimethylformamide (DMF), N,N-dimethylacetamide (DMAc), and N,N-diethylacetamide. Amine, N-methyl-2-pyrrolidone (NMP), 2-butanone, dimethylsulfoxide (DMSO), hexamethylphosphonamide, N-methylcaprolactam, dimethyl sulfate, cyclohexane Hexanone, dioxane, tetrahydrofuran, diglyme, triglyme, cresol, etc. Two or more of these solvents may be used in combination, and aromatic hydrocarbons such as xylene and toluene may be used in combination. In addition, the usage amount of such an organic solvent is not particularly limited, but it is preferably used in an amount adjusted so that the concentration of the polyamide solution obtained by the polymerization reaction is about 5% by weight to 50% by weight.

所合成的聚醯胺酸通常有利的是作為反應溶媒溶液而使用,可視需要進行濃縮、稀釋或置換為其他有機溶媒。另外,聚醯胺酸通常因溶媒可溶性優異而有利地使用。聚醯胺酸的溶液的黏度優選為500 cps~100,000 cps的範圍內。若偏離所述範圍,則在利用塗布機等的塗敷作業時容易在膜中產生厚度不均、條紋等不良。The synthesized polyamide is usually advantageously used as a reaction solvent solution, and can be concentrated, diluted or replaced with other organic solvents as necessary. In addition, polyamide is generally used advantageously because it has excellent solvent solubility. The viscosity of the polyamide solution is preferably in the range of 500 cps to 100,000 cps. If it deviates from the above range, defects such as uneven thickness and streaks may easily occur in the film during coating operations using a coater or the like.

使聚醯胺酸醯亞胺化而形成聚醯亞胺的方法並無特別限制,例如可適宜採用在所述溶媒中以80℃~400℃的範圍內的溫度條件歷時1小時~24小時進行加熱等熱處理。The method of imidizing polyamide acid to form polyimide is not particularly limited. For example, it can be suitably carried out in the solvent at a temperature in the range of 80°C to 400°C for 1 hour to 24 hours. Heating and other heat treatments.

在使如以上般獲得的黏接性聚醯亞胺進行交聯形成的情況下,對包含具有酮基的聚醯亞胺的樹脂溶液添加所述氨基化合物,並使黏接性聚醯亞胺中的酮基與氨基化合物的一級氨基進行縮合反應。通過所述縮合反應,樹脂溶液硬化而成為硬化物。所述情況下,關於氨基化合物的添加量,可以一級氨基相對於酮基1莫耳而合計可為0.004莫耳~1.5莫耳、優選為0.005莫耳~1.2莫耳、更優選為0.03莫耳~0.9莫耳、最優選為0.04莫耳~0.5莫耳的方式添加氨基化合物。關於一級氨基相對於酮基1莫耳而合計小於0.004莫耳的之類的氨基化合物的添加量,因利用氨基化合物的聚醯亞胺鏈的交聯不充分,因此存在硬化後的黏接層30中難以顯現出耐熱性的傾向,若氨基化合物的添加量超過1.5莫耳,則未反應的氨基化合物作為熱塑劑發揮作用,存在黏接層30的耐熱性降低的傾向。When the adhesive polyimide obtained as above is cross-linked, the amino compound is added to a resin solution containing a polyimide having a ketone group, and the adhesive polyimide is The ketone group in the amino compound undergoes a condensation reaction with the primary amino group of the amino compound. The resin solution is hardened by the condensation reaction to become a hardened product. In this case, the amount of the amino compound added may be 0.004 mol to 1.5 mol in total of the primary amino group per 1 mol of ketone group, preferably 0.005 mol to 1.2 mol, and more preferably 0.03 mol. The amino compound is added in an amount of ~0.9 moles, most preferably 0.04 moles to 0.5 moles. Regarding the addition amount of amino compounds such as those where the total amount of the primary amino group is less than 0.004 mol per mole of the ketone group, the cross-linking of the polyimide chain by the amino compound is insufficient, so there is an adhesive layer after hardening. 30 tends to be difficult to develop heat resistance. If the added amount of the amino compound exceeds 1.5 mol, the unreacted amino compound acts as a thermoplastic, and the heat resistance of the adhesive layer 30 tends to decrease.

用以進行交聯形成的縮合反應的條件若為黏接性聚醯亞胺中的酮基與氨基化合物的一級氨基進行反應而形成亞胺鍵(C=N鍵)的條件,則並無特別限制。關於加熱縮合的溫度,出於將通過縮合而生成的水放出至系統外、或於在黏接性聚醯亞胺的合成後繼而進行加熱縮合反應的情況下使所述縮合步驟簡略化等理由,例如優選為120℃~220℃的範圍內,更優選為140℃~200℃的範圍內。反應時間優選為30分鐘~24小時左右,反應的終點例如可通過使用傅立葉轉換紅外分光光度計(市售品:日本分光製造的FT/IR620)對紅外線吸收光譜進行測定,並利用1670 cm -1附近的源自聚醯亞胺樹脂中的酮基的吸收峰值減少或消失、及1635 cm -1附近的源自亞胺基的吸收峰值出現而確認。 The conditions for the condensation reaction to form cross-links are not particularly limited as long as the ketone group in the adhesive polyimide reacts with the primary amino group of the amino compound to form an imine bond (C=N bond). limit. The temperature of the heating condensation is for reasons such as releasing the water generated by the condensation out of the system or simplifying the condensation step when the synthesis of the adhesive polyimide is followed by a heating condensation reaction. , for example, preferably in the range of 120°C to 220°C, more preferably in the range of 140°C to 200°C. The reaction time is preferably about 30 minutes to 24 hours. The end point of the reaction can be measured by measuring the infrared absorption spectrum using a Fourier transform infrared spectrophotometer (commercial product: FT/IR620 manufactured by JASCO Corporation) and using 1670 cm -1 It was confirmed that the nearby absorption peak derived from the ketone group in the polyimide resin decreased or disappeared, and the nearby absorption peak derived from the imine group appeared near 1635 cm -1 .

黏接性聚醯亞胺的酮基與氨基化合物的一級氨基的加熱縮合例如可利用如下方法等進行:(a)緊接著黏接性聚醯亞胺的合成(醯亞胺化)而添加氨基化合物並進行加熱的方法;(b)預先投入過剩量的氨基化合物作為二胺成分,緊接著黏接性聚醯亞胺的合成(醯亞胺化),而對不參與醯亞胺化或醯胺化的殘留的氨基化合物以及黏接性聚醯亞胺一起進行加熱的方法;或者(c)將添加有氨基化合物的黏接性聚醯亞胺的組合物加工為規定的形狀後(例如,在任意的基材上進行塗布後或形成為膜狀後)進行加熱的方法。Thermal condensation of the ketone group of the adhesive polyimide and the primary amino group of the amino compound can be performed, for example, by the following method: (a) Adding the amino group immediately after the synthesis (imidization) of the adhesive polyimide A method of heating the compound; (b) adding an excess amount of amino compound as the diamine component in advance, followed by the synthesis of the adhesive polyimide (imidization), without participating in the imidization or imidization A method of heating the aminated residual amino compound and the adhesive polyimide together; or (c) processing the adhesive polyimide composition to which the amino compound is added into a prescribed shape (for example, A method of heating after coating or forming a film on any base material.

為了賦予黏接層30的耐熱性,而在黏接性聚醯亞胺中的交聯結構的形成中說明了亞胺鍵的形成,但並不限定於此,作為黏接層30的硬化方法,例如也可調配環氧樹脂、環氧樹脂硬化劑等而進行硬化。In order to provide heat resistance to the adhesive layer 30, the formation of an imine bond is described in the formation of a cross-linked structure in the adhesive polyimide, but it is not limited to this. As a method of hardening the adhesive layer 30 , for example, epoxy resin, epoxy resin hardener, etc. can also be mixed and hardened.

<樹脂層的厚度> 關於覆金屬積層板100,在將絕緣樹脂層10的厚度T3與黏接層30的厚度T2的合計厚度設為T1時,所述合計厚度T1為50 μm~250 μm的範圍內,優選為70 μm~150 μm的範圍內。若合計厚度T1小於50 μm,則使用覆金屬積層板100製造多層電路基板時的傳輸損耗降低的效果不充分,若超過250 μm,則存在生產性降低的擔憂。 <Thickness of resin layer> Regarding the metal-clad laminated board 100, when the total thickness of the thickness T3 of the insulating resin layer 10 and the thickness T2 of the adhesive layer 30 is T1, the total thickness T1 is in the range of 50 μm to 250 μm, preferably 70 Within the range of μm~150 μm. If the total thickness T1 is less than 50 μm, the effect of reducing transmission loss when manufacturing a multilayer circuit board using the metal-clad laminate 100 is insufficient. If the total thickness T1 exceeds 250 μm, there is a concern that productivity decreases.

另外,黏接層30的厚度T2例如優選為處於20 μm~200 μm的範圍內,更優選為20 μm~100 μm的範圍內。若黏接層30的厚度T2不足所述下限值,則就高頻基板而言,有時傳輸損耗變大。另一方面,若黏接層30的厚度T2超過所述上限值,則有時產生尺寸穩定性降低等不良情況。In addition, the thickness T2 of the adhesive layer 30 is preferably in the range of 20 μm to 200 μm, for example, and more preferably in the range of 20 μm to 100 μm. If the thickness T2 of the adhesive layer 30 is less than the lower limit, the transmission loss of the high-frequency substrate may increase. On the other hand, if the thickness T2 of the adhesive layer 30 exceeds the upper limit, problems such as reduced dimensional stability may occur.

另外,黏接層30的厚度T2相對於合計厚度T1的比率(T2/T1)為0.5~0.8的範圍內,優選為0.5~0.7的範圍內。若比率(T2/T1)小於0.5,則難以將合計厚度T1設為50 μm以上,若超過0.8,則產生尺寸穩定性降低等不良情況。In addition, the ratio (T2/T1) of the thickness T2 of the adhesive layer 30 to the total thickness T1 is in the range of 0.5 to 0.8, preferably in the range of 0.5 to 0.7. If the ratio (T2/T1) is less than 0.5, it will be difficult to set the total thickness T1 to 50 μm or more. If it exceeds 0.8, problems such as reduced dimensional stability will occur.

絕緣樹脂層10的厚度T3例如優選為處於12 μm~100 μm的範圍內,更優選為12 μm~50 μm的範圍內。若絕緣樹脂層10的厚度T3不足所述下限值,則有時產生覆金屬積層板100的翹曲等問題。若絕緣樹脂層10的厚度T3超過所述上限值,則產生生產性降低等不良情況。The thickness T3 of the insulating resin layer 10 is, for example, preferably in the range of 12 μm to 100 μm, and more preferably in the range of 12 μm to 50 μm. If the thickness T3 of the insulating resin layer 10 is less than the lower limit, problems such as warpage of the metal-clad laminate 100 may occur. If the thickness T3 of the insulating resin layer 10 exceeds the upper limit, problems such as reduced productivity may occur.

在本實施形態的覆金屬積層板100中,為了實現樹脂層整體的低介電損耗正切化,並可應對高頻傳輸,而使黏接層30的厚度T2自身增大。然而,通常,彈性模數低的材料顯示出高的熱膨脹係數,因此增大層厚的情況存在導致尺寸穩定性降低的擔憂。此處,認為對覆金屬積層板100進行電路加工並加以多層電路化時產生的尺寸變化主要是因下述的a)~c)機制而產生,b)與c)的合計量成為蝕刻後的尺寸變化而顯現。 a)在製造覆金屬積層板100時,在樹脂層中蓄積內部應力。 b)在電路加工時,通過蝕刻金屬層20,而釋放a)中所蓄積的內部應力,樹脂層膨脹或收縮。 c)在電路加工時,通過蝕刻金屬層20,而露出的樹脂吸濕並膨脹。 In the metal-clad laminate 100 of this embodiment, the thickness T2 of the adhesive layer 30 itself is increased in order to realize low dielectric loss tangent of the entire resin layer and to cope with high-frequency transmission. However, in general, materials with a low elastic modulus exhibit a high thermal expansion coefficient, so there is a concern that increasing the layer thickness will lead to a decrease in dimensional stability. Here, it is considered that the dimensional changes that occur when the metal-clad laminated board 100 is subjected to circuit processing and multi-layered circuits are formed mainly due to the following mechanisms a) to c), and the total amount of b) and c) becomes the post-etching Appears due to size changes. a) When manufacturing the metal-clad laminated board 100, internal stress is accumulated in the resin layer. b) During circuit processing, the internal stress accumulated in a) is released by etching the metal layer 20, and the resin layer expands or contracts. c) During circuit processing, by etching the metal layer 20, the exposed resin absorbs moisture and expands.

所述a)的內部應力的主要原因為:1)金屬層20與樹脂層的熱膨脹係數的差;2)通過膜化而產生的樹脂內部應變。此處,1)引起的內部應力的大小不僅受熱膨脹係數的差的影響,而且還受多層電路化時的黏接時的溫度(加熱溫度)至冷卻固化的溫度為止的溫度差ΔT的影響。即,內部應力與溫度差ΔT成比例地變大,因此,即便金屬層20與樹脂層的熱膨脹係數的差小,越是黏接時需要高溫的樹脂,內部應力也越變大。在本實施形態的覆金屬積層板100中,通過採用滿足所述條件(i)~(iii)者作為黏接層30,而減小內部應力並確保尺寸穩定性。另外,黏接層30積層於絕緣樹脂層10,因此,在形成多層電路基板的情況下,作為中間層發揮功能,並抑制翹曲與尺寸變化。The main causes of the internal stress in a) are: 1) the difference in thermal expansion coefficient between the metal layer 20 and the resin layer; 2) the internal strain of the resin generated by film formation. Here, the magnitude of the internal stress caused by 1) is affected not only by the difference in thermal expansion coefficient, but also by the temperature difference ΔT between the bonding temperature (heating temperature) during multilayer circuit formation and the cooling and solidification temperature. That is, the internal stress increases in proportion to the temperature difference ΔT. Therefore, even if the difference in thermal expansion coefficient between the metal layer 20 and the resin layer is small, the internal stress increases as high-temperature resin is required for bonding. In the metal-clad laminated board 100 of this embodiment, by using the adhesive layer 30 that satisfies the above conditions (i) to (iii), internal stress is reduced and dimensional stability is ensured. In addition, since the adhesive layer 30 is laminated on the insulating resin layer 10, when forming a multilayer circuit board, it functions as an intermediate layer and suppresses warpage and dimensional changes.

[覆金屬積層板的製造方法] 覆金屬積層板100例如可利用以下的方法1、或方法2來製造。 [方法1] 將成為黏接層30的樹脂組合物成形為膜狀並製成黏接膜,將所述黏接膜以與單面覆金屬積層板40的絕緣樹脂層10相向的方式配置並貼合,並且進行熱壓接的方法。 [方法2] 將成為黏接層30的樹脂組合物的溶液以規定厚度塗布於單面覆金屬積層板40的絕緣樹脂層10上並進行乾燥的方法。所述情況下,視需要也可進行用以進行硬化反應或交聯反應的加熱等處理。 [Metal-clad laminate manufacturing method] The metal-clad laminated board 100 can be manufactured by the following method 1 or method 2, for example. [method 1] The resin composition to be the adhesive layer 30 is formed into a film shape to prepare an adhesive film. The adhesive film is arranged and bonded so as to face the insulating resin layer 10 of the single-sided metal-clad laminate 40 , and then Thermocompression bonding method. [Method 2] A method of applying a solution of the resin composition that becomes the adhesive layer 30 to a predetermined thickness on the insulating resin layer 10 of the single-sided metal-clad laminate 40 and drying the solution. In this case, if necessary, heating or other treatment for performing a hardening reaction or a cross-linking reaction may be performed.

方法1中使用的黏接膜例如可通過如下方式製造:在任意的支撐基材塗布成為黏接層30的樹脂組合物的溶液並進行乾燥,之後,自支撐基材進行剝離。作為黏接膜,也可使用將所述黏接性聚醯亞胺形成為膜狀而成的黏接性聚醯亞胺膜。作為黏接性聚醯亞胺膜的製造方法的形態,例如可列舉如下方法:[1]在支撐基材塗布聚醯胺酸的溶液並進行乾燥,進行熱處理而醯亞胺化,之後,自支撐基材進行剝落而製造黏接膜的方法;[2]在支撐基材塗布聚醯胺酸的溶液並進行乾燥,之後,自支撐基材剝落聚醯胺酸的凝膠膜,進行熱處理而醯亞胺化,從而製造黏接膜的方法;[3]在支撐基材塗布黏接性聚醯亞胺的溶液並進行乾燥後,自支撐基材進行剝落而製造黏接膜的方法。所述[1]~[3]中,優選為利用在支撐基材上塗布在聚醯胺酸溶液中結束醯亞胺化的黏接性聚醯亞胺的溶液並進行乾燥的[3]的方法來形成。因黏接性聚醯亞胺為溶劑可溶性,因此將聚醯胺酸以溶液的狀態醯亞胺化,可作為黏接性聚醯亞胺的塗布液而直接使用,因此有利。再者,關於構成黏接膜的黏接性聚醯亞胺,也可利用所述方法進行交聯形成。The adhesive film used in Method 1 can be produced, for example, by applying a solution of the resin composition to be the adhesive layer 30 to any supporting base material, drying the solution, and then peeling the solution from the supporting base material. As the adhesive film, an adhesive polyimide film obtained by forming the adhesive polyimide into a film shape can also be used. Examples of methods for producing an adhesive polyimide film include the following method: [1] Apply a polyimide solution to a support base material, dry it, perform heat treatment to imidize it, and then self-coat the polyimide film. A method of peeling off a support base material to produce an adhesive film; [2] Coating a polyamide solution on the support base material and drying it, and then peeling off the polyamide gel film from the support base material and subjecting it to heat treatment. A method of producing an adhesive film by imidization; [3] A method of coating a support base material with an adhesive polyimide solution and drying it, and then peeling off the self-supporting base material to produce an adhesive film. Among the above [1] to [3], the preferred method is [3] in which a solution of an adhesive polyimide that has been imidized in a polyamide acid solution is applied onto a supporting base material and dried. method to form. Since the adhesive polyimide is solvent-soluble, it is advantageous to imidize the polyamide acid in a solution state and to use it directly as a coating liquid for the adhesive polyimide. Furthermore, the adhesive polyimide constituting the adhesive film can also be formed by cross-linking using the above method.

在所述方法1、方法2中,作為將成為黏接層30的樹脂組合物的溶液塗布於支撐基材或絕緣樹脂層10上的方法,並無特別限制,例如可利用缺角輪、模、刮刀、模唇等塗布機進行塗布。在黏接層30的形成步驟中,優選為將所形成的黏接層30的表面形成為平坦狀。另外,優選為也均勻地形成黏接層30的厚度。通過將黏接層30的表面形成為平坦狀並使厚度均勻,而提高多層電路基板的製造步驟中的黏接性。In the above methods 1 and 2, the method for applying the solution of the resin composition that becomes the adhesive layer 30 on the supporting base material or the insulating resin layer 10 is not particularly limited. For example, a notch wheel or a mold can be used. , scraper, die lip and other coating machines for coating. In the step of forming the adhesive layer 30, it is preferable that the surface of the formed adhesive layer 30 be formed into a flat shape. In addition, it is preferable that the thickness of the adhesive layer 30 is also formed uniformly. By forming the surface of the adhesive layer 30 into a flat shape and making the thickness uniform, the adhesiveness in the manufacturing step of the multilayer circuit substrate is improved.

如以上般獲得的本實施形態的覆金屬積層板100通過對金屬層20進行配線電路加工而可製造單面FPC或兩面FPC,除此以外,進而利用黏接層30的黏接性、或利用任意的黏結片(bonding sheet)等而積層多個單面FPC或兩面FPC,由此,可製造多層電路基板。The metal-clad laminated board 100 of the present embodiment obtained as above can be manufactured by performing wiring circuit processing on the metal layer 20 to produce a single-sided FPC or a double-sided FPC. In addition, the adhesiveness of the adhesive layer 30 is utilized, or the By stacking a plurality of single-sided FPCs or double-sided FPCs using arbitrary bonding sheets, a multilayer circuit board can be manufactured.

[電路基板] 圖2是表示本發明的一實施形態的電路基板的結構的剖面圖。所述電路基板101包括:絕緣樹脂層10;導體電路層50,積層於絕緣樹脂層10的其中一面;以及黏接層30,積層於絕緣樹脂層10的其中另一面。即,電路基板101為依次積層有導體電路層50/絕緣樹脂層10/黏接層30的結構。本實施形態的電路基板101是通過對覆金屬積層板100的金屬層20進行配線電路加工而獲得。 [Circuit board] 2 is a cross-sectional view showing the structure of a circuit board according to an embodiment of the present invention. The circuit substrate 101 includes: an insulating resin layer 10; a conductor circuit layer 50 laminated on one side of the insulating resin layer 10; and an adhesive layer 30 laminated on the other side of the insulating resin layer 10. That is, the circuit board 101 has a structure in which the conductor circuit layer 50 / the insulating resin layer 10 / the adhesive layer 30 are laminated in this order. The circuit board 101 of this embodiment is obtained by subjecting the metal layer 20 of the metal-clad laminate 100 to wiring circuit processing.

(導體電路層) 導體電路層50是在絕緣樹脂層10的單面以規定圖案形成導體電路而成的層。例如,在覆金屬積層板100的金屬層20上塗布感光性抗蝕劑,進行曝光、顯影,而形成規定的光罩圖案,介隔光罩圖案進行金屬層20的蝕刻後,去除光罩圖案,由此,可形成規定圖案的導體電路層50。再者,所謂「導體電路層」,是指在絕緣樹脂層10的面方向上形成的面內連接電極(焊盤電極(land electrode)),與層間連接電極(通孔(via)電極)加以區別。 (conductor circuit layer) The conductive circuit layer 50 is a layer in which a conductive circuit is formed in a predetermined pattern on one side of the insulating resin layer 10 . For example, a photosensitive resist is coated on the metal layer 20 of the metal-clad laminate 100, exposed and developed to form a predetermined mask pattern, and the metal layer 20 is etched through the mask pattern, and then the mask pattern is removed. , thereby forming the conductor circuit layer 50 of a predetermined pattern. Note that the “conductor circuit layer” refers to an in-plane connection electrode (land electrode) formed in the surface direction of the insulating resin layer 10, and an interlayer connection electrode (via electrode). difference.

關於導體電路層50,自減低高頻傳輸中的傳輸損耗的觀點而言,與絕緣樹脂層10相接的面的最大高度粗糙度(Rz)優選為1.0 μm以下。傳輸損耗包含導體損耗與介電損耗的和,若導體電路層50的Rz大,則導體損耗變大,並且對傳輸損耗造成不良影響,因此,優選為對Rz進行控制。Regarding the conductor circuit layer 50 , from the viewpoint of reducing transmission loss in high-frequency transmission, the maximum height roughness (Rz) of the surface in contact with the insulating resin layer 10 is preferably 1.0 μm or less. Transmission loss includes the sum of conductor loss and dielectric loss. If Rz of the conductor circuit layer 50 is large, the conductor loss becomes large and adversely affects the transmission loss. Therefore, it is preferable to control Rz.

本實施形態的電路基板101中的絕緣樹脂層10及黏接層30的構成如在覆金屬積層板100中所說明般。The structures of the insulating resin layer 10 and the adhesive layer 30 in the circuit board 101 of this embodiment are as described for the metal-clad laminate 100 .

[多層電路基板] 其次,一邊參照圖3~圖6,一邊對本發明的實施形態的多層電路基板進行說明。通常,多層電路基板具有包含多個絕緣樹脂層的積層體、以及埋入至所述積層體的內部的兩層以上的導體電路層,且優選為具有至少兩層以上的絕緣樹脂層及至少兩層以上的導體電路層。此處,關於多層電路基板,列舉兩個優選的實施形態進行說明。本實施形態的多層電路基板200、多層電路基板201包含至少一個以上的所述電路基板101。另外,本實施形態的多層電路基板200、多層電路基板201可包含一個以上的積層於所述電路基板101的、電路基板101以外的任意的電路基板。 [Multilayer circuit board] Next, the multilayer circuit board according to the embodiment of the present invention will be described with reference to FIGS. 3 to 6 . Generally, the multilayer circuit board has a laminate including a plurality of insulating resin layers and two or more conductor circuit layers embedded in the laminate, and preferably has at least two or more insulating resin layers and at least two layer above the conductor circuit layer. Here, two preferred embodiments of the multilayer circuit board will be described. The multilayer circuit board 200 and the multilayer circuit board 201 of this embodiment include at least one of the circuit boards 101 described above. In addition, the multilayer circuit board 200 and the multilayer circuit board 201 of this embodiment may include one or more arbitrary circuit boards other than the circuit board 101 that are laminated on the circuit board 101 .

<第一實施形態> 圖3是表示本發明的第一實施形態的多層電路基板200的結構的積層方向上的剖面圖。第一實施形態的多層電路基板200是在相同方向上重疊積層有多個電路基板101、以及任意的電路基板110的結構。 即,自圖3中的上方朝向下方,第一個電路基板101的黏接層30以覆蓋第二個電路基板101的導體電路層50的方式相接並積層,進而,第二個電路基板101的黏接層30以覆蓋不具有黏接層30的任意的電路基板110的導體電路層50的方式相接並積層。此處,任意的電路基板110的結構或材質並無限定,例如,可由經圖案化的金屬層20形成導體電路層50,也可具有鑲嵌(damascene)結構的導體電路層50。另外,任意的電路基板110的導體電路層50可通過噴墨、濺射、鍍覆等而形成於絕緣樹脂層10。進而,任意的電路基板110的導體電路層50或絕緣樹脂層10的厚度、材質、物性等也無特別限定。 <First Embodiment> FIG. 3 is a cross-sectional view in the lamination direction showing the structure of the multilayer circuit board 200 according to the first embodiment of the present invention. The multilayer circuit board 200 of the first embodiment has a structure in which a plurality of circuit boards 101 and an arbitrary circuit board 110 are stacked and laminated in the same direction. That is, from the upper side to the lower side in FIG. 3 , the adhesive layer 30 of the first circuit board 101 is connected and laminated so as to cover the conductor circuit layer 50 of the second circuit board 101 , and further, the second circuit board 101 The adhesive layer 30 is connected and laminated so as to cover the conductor circuit layer 50 of any circuit board 110 that does not have the adhesive layer 30 . Here, the structure or material of any circuit substrate 110 is not limited. For example, the conductor circuit layer 50 may be formed of a patterned metal layer 20 or may have a damascene structure. In addition, the conductor circuit layer 50 of any circuit board 110 can be formed on the insulating resin layer 10 by inkjet, sputtering, plating, or the like. Furthermore, the thickness, material, physical properties, etc. of the conductor circuit layer 50 or the insulating resin layer 10 of the arbitrary circuit board 110 are not particularly limited.

圖3中,圖示有兩個電路基板101與一個任意的電路基板110的積層結構,也可積層三個以上的電路基板101。另外,黏接層30可被覆鄰接的電路基板101或任意的電路基板110的導體電路層50的全部,也可被覆一部分。進而,多層電路基板200中,在最上部的電路基板101的表面露出導體電路層50,也可設置覆蓋最上部的導體電路層50的任意的保護膜。另外,圖3中,作為任意的電路基板110,例示有在絕緣樹脂層10的單面形成有導體電路層50的情況,也可在絕緣樹脂層10的兩面分別形成導體電路層50。In FIG. 3 , a laminated structure of two circuit boards 101 and one arbitrary circuit board 110 is shown, but three or more circuit boards 101 may be laminated. In addition, the adhesive layer 30 may cover the entire conductor circuit layer 50 of the adjacent circuit board 101 or any circuit board 110, or may cover a part thereof. Furthermore, in the multilayer circuit board 200, the conductive circuit layer 50 is exposed on the surface of the uppermost circuit board 101, and any protective film covering the uppermost conductive circuit layer 50 may be provided. 3 illustrates an arbitrary circuit board 110 in which the conductor circuit layer 50 is formed on one side of the insulating resin layer 10 . The conductor circuit layer 50 may be formed on both sides of the insulating resin layer 10 .

圖4為第一實施形態的多層電路基板200的製造步驟圖。首先,準備多個電路基板101、與任意的電路基板110。而且,將第一個電路基板101的黏接層30以與第二個電路基板101的導體電路層50相向的方式重疊配置,且將第二個電路基板101的黏接層30以與不具有黏接層30的任意的電路基板110的導體電路層50相向的方式重疊配置,並且將這些一併壓接,由此可進行製造(壓接步驟)。再者,圖4中,示出有積層兩個電路基板101的例子,也可一次積層三個以上的電路基板101。另外,任意的電路基板110也不限於一個,可積層多個。FIG. 4 is a manufacturing step diagram of the multilayer circuit board 200 according to the first embodiment. First, a plurality of circuit boards 101 and an arbitrary circuit board 110 are prepared. Furthermore, the adhesive layer 30 of the first circuit board 101 is overlapped and disposed so as to face the conductor circuit layer 50 of the second circuit board 101, and the adhesive layer 30 of the second circuit board 101 is arranged so as to have no The adhesive layer 30 can be manufactured by arranging the conductor circuit layers 50 of any of the circuit boards 110 to face each other and pressing them together (pressing step). In addition, FIG. 4 shows an example in which two circuit boards 101 are laminated. However, three or more circuit boards 101 may be laminated at one time. In addition, the arbitrary circuit board 110 is not limited to one, and a plurality of circuit boards 110 may be stacked.

電路基板101的黏接層30因其表面經平坦化,而在壓接步驟中不會在黏接層30中產生空隙等,可在將黏接性樹脂填充至導體電路層50的導體電路間的狀態下進行積層。另外,視需要,利用加壓輥或壓制裝置等自兩側對積層而獲得的多層電路基板200進行加壓,由此也可進行調整所述黏接層30的厚度的厚度調整步驟。通過厚度調整步驟,可提高黏接層30及多層電路基板200整體的厚度精度。進而,在壓接時,例如也可進行在60℃~220℃的溫度下進行加熱的加熱處理。由此,可製造一體地積層有多個電路基板的多層電路基板200。所述加熱處理時,在黏接層30中,例如也可通過黏接性聚醯亞胺的加熱縮合而形成亞胺鍵的交聯結構。Since the surface of the adhesive layer 30 of the circuit substrate 101 is flattened, no gaps or the like will be generated in the adhesive layer 30 during the crimping step, and the adhesive resin can be filled between the conductor circuits of the conductor circuit layer 50. Stacking is performed in the state. In addition, if necessary, the thickness adjustment step of adjusting the thickness of the adhesive layer 30 may be performed by pressing the laminated multilayer circuit board 200 from both sides using a pressure roller or a pressing device. Through the thickness adjustment step, the overall thickness accuracy of the adhesive layer 30 and the multilayer circuit substrate 200 can be improved. Furthermore, during pressure bonding, a heat treatment of heating at a temperature of 60° C. to 220° C. may be performed. Thereby, the multilayer circuit board 200 in which a plurality of circuit boards are integrally laminated can be manufactured. During the heat treatment, a cross-linked structure of imine bonds may be formed in the adhesive layer 30 by, for example, heat condensation of adhesive polyimide.

在本實施形態中,各電路基板101的黏接層30具有使電路基板彼此黏接的作為黏結片的功能、以及保護導體電路的作為保護膜的功能。因此,無需另行準備黏結片或導體電路用保護層並使其介隔存在於電路基板間,可實現用以形成多層電路的製程及設備的簡略化、與材料的簡單化及成本削減。In this embodiment, the adhesive layer 30 of each circuit board 101 functions as an adhesive sheet for bonding the circuit boards to each other, and as a protective film for protecting the conductor circuit. Therefore, there is no need to separately prepare an adhesive sheet or a protective layer for conductor circuits and have them interposed between the circuit substrates, thereby achieving simplification of processes and equipment, simplification of materials, and cost reduction for forming multilayer circuits.

如以上般獲得的多層電路基板200包括如下構成:在導體電路層50及絕緣樹脂層10之間設置有具有充分的厚度的黏接層30,以確保絕緣性、柔軟性及低介電特性。再者,在本實施形態的多層電路基板200中,視需要也可設置覆蓋膜或阻焊劑等的層作為保護層。另外,雖省略圖示,但在本實施形態的多層電路基板200的內部也可內置例如IC晶片或晶片電容器、晶片線圈、晶片電阻等晶片型電子零件。另外,在本實施形態的多層電路基板200中,也可形成並未圖示的層間連接電極(通孔電極)。層間連接電極可通過如下方式形成:利用雷射加工或鑽孔加工而在絕緣樹脂層10形成導通孔後,利用印刷等填充導電性糊。導電性糊例如可使用在以錫為主成分的導電性粉末中混合有機溶劑或環氧樹脂等而成的導電性糊。另外,層間連接電極可在形成導通孔後,在導通孔的內表面及導體電路層50的表面的一部分形成鍍覆部。The multilayer circuit board 200 obtained as above includes a structure in which an adhesive layer 30 with sufficient thickness is provided between the conductor circuit layer 50 and the insulating resin layer 10 to ensure insulation, flexibility, and low dielectric properties. Furthermore, in the multilayer circuit board 200 of this embodiment, a layer such as a cover film or a solder resist may be provided as a protective layer if necessary. Although illustration is omitted, chip-type electronic components such as IC chips or chip capacitors, chip coils, and chip resistors may be built into the multilayer circuit board 200 of this embodiment. In addition, in the multilayer circuit board 200 of this embodiment, interlayer connection electrodes (via-hole electrodes) not shown may be formed. The interlayer connection electrode can be formed by forming a via hole in the insulating resin layer 10 by laser processing or drilling, and then filling the conductive paste with printing or the like. For example, a conductive paste obtained by mixing an organic solvent, an epoxy resin, or the like with a conductive powder containing tin as a main component can be used. In addition, the interlayer connection electrode may form a plated portion on a part of the inner surface of the via hole and the surface of the conductive circuit layer 50 after the via hole is formed.

<第二實施形態> 圖5是表示本發明的第二實施形態的多層電路基板201的結構的積層方向上的剖面圖。第二實施形態的多層電路基板201中,將使一對電路基板101以這些的黏接層30彼此相向的方式貼合而成的結構設為一個電路基板單元102,且包含至少一個以上的所述電路基板單元102。 即,自圖5中的上方朝向下方,依次配置有第一個覆金屬積層板100、電路基板單元102、第二個覆金屬積層板100(其中,與第一個覆金屬積層板100為相反方向),且以在兩個覆金屬積層板100的黏接層30之間夾入所述電路基板單元102的形式進行積層。第一個覆金屬積層板100的黏接層30以與電路基板單元102的單面側(圖中為上側)的導體電路層50相接的方式積層,進而,在電路基板單元102的另一單面側(圖中為下側)的導體電路層50,第二個覆金屬積層板100的黏接層30以與導體電路層50相接的方式積層。再者,圖5中,圖示有僅包含一個電路基板單元102的積層結構,也可通過進而介隔存在黏結片或電路基板101或者任意的電路基板110而製成包含多個電路基板單元102的積層結構。另外,作為上下兩個覆金屬積層板100的一者或兩者,也可使用所述電路基板101。 <Second Embodiment> FIG. 5 is a cross-sectional view in the lamination direction showing the structure of the multilayer circuit board 201 according to the second embodiment of the present invention. In the multilayer circuit board 201 of the second embodiment, a structure in which a pair of circuit boards 101 are bonded so that the adhesive layers 30 face each other is used as one circuit board unit 102 and includes at least one or more of them. The circuit substrate unit 102 is described. That is, from the top to the bottom in FIG. 5 , the first metal-clad laminated board 100 , the circuit board unit 102 , and the second metal-clad laminated board 100 are arranged in this order (wherein, the first metal-clad laminated board 100 is opposite to direction), and lamination is performed in the form of sandwiching the circuit substrate unit 102 between the adhesive layers 30 of the two metal-clad laminate boards 100 . The adhesive layer 30 of the first metal-clad laminated board 100 is laminated so as to be in contact with the conductor circuit layer 50 on one side of the circuit board unit 102 (the upper side in the figure), and further, on the other side of the circuit board unit 102 The conductive circuit layer 50 on one side (the lower side in the figure) and the adhesive layer 30 of the second metal-clad laminated board 100 are laminated so as to be in contact with the conductive circuit layer 50 . Furthermore, in FIG. 5 , a laminated structure including only one circuit board unit 102 is shown, but it can also be made to include a plurality of circuit board units 102 by further interposing an adhesive sheet or a circuit board 101 or an arbitrary circuit board 110 . layered structure. In addition, the circuit board 101 may be used as one or both of the upper and lower metal-clad laminates 100 .

圖6為第二實施形態的多層電路基板201的製造步驟圖。首先,準備一個電路基板單元102、與兩個覆金屬積層板100。此處,電路基板單元102可通過如下方式製作:準備一對電路基板101,且將其中一個電路基板101的黏接層30、與其中另一個電路基板101的黏接層30貼合。而且,多層電路基板201可通過如下方式製造:第一個覆金屬積層板100的黏接層30以與電路基板單元102的上表面側的導體電路層50相向的方式配置,進而,在電路基板單元102的下表面側的導體電路層50,第二個覆金屬積層板100的黏接層30以與導體電路層50相向的方式配置,並且將這些一併壓接(壓接步驟)。FIG. 6 is a manufacturing step diagram of the multilayer circuit board 201 of the second embodiment. First, one circuit substrate unit 102 and two metal-clad laminate boards 100 are prepared. Here, the circuit substrate unit 102 can be produced by preparing a pair of circuit substrates 101 and bonding the adhesive layer 30 of one circuit substrate 101 to the adhesive layer 30 of the other circuit substrate 101 . Furthermore, the multilayer circuit board 201 can be manufactured by arranging the adhesive layer 30 of the first metal-clad laminated board 100 to face the conductor circuit layer 50 on the upper surface side of the circuit board unit 102, and further, on the circuit board The conductor circuit layer 50 on the lower surface side of the unit 102 and the adhesive layer 30 of the second metal-clad laminate 100 are arranged to face the conductor circuit layer 50, and these are crimped together (crimping step).

再者,也可不製作電路基板單元102,而是第一個覆金屬積層板100的黏接層30以與上側的電路基板101的導體電路層50相向的方式配置,上側的電路基板101的黏接層30與下側的電路基板101的黏接層30以相向的方式配置,進而,在下側的電路基板101的導體電路層50,第二個覆金屬積層板100的黏接層30以與導體電路層50相向的方式配置,並且將這些一併壓接。Furthermore, the circuit substrate unit 102 may not be produced, but the adhesive layer 30 of the first metal-clad laminated board 100 may be arranged to face the conductor circuit layer 50 of the upper circuit substrate 101, and the adhesive layer of the upper circuit substrate 101 may be The connecting layer 30 and the adhesive layer 30 of the lower circuit substrate 101 are arranged to face each other. Furthermore, the conductor circuit layer 50 of the lower circuit substrate 101 and the adhesive layer 30 of the second metal-clad laminate 100 are in contact with each other. The conductor circuit layers 50 are arranged to face each other, and these are crimped together.

視需要,利用加壓輥或壓制裝置等自兩側對積層而獲得的多層電路基板201進行加壓,由此也可進行調整黏接層30的厚度的厚度調整步驟。通過厚度調整步驟,可提高黏接層30及多層電路基板201整體的厚度精度。進而,在壓接時,例如也可進行在60℃~220℃的溫度下進行加熱的加熱處理。由此,可製造一體地積層有多個電路基板的多層電路基板201。所述加熱處理時,在黏接層30中,例如也可通過黏接性聚醯亞胺的加熱縮合而形成亞胺鍵的交聯結構。If necessary, the thickness adjustment step of adjusting the thickness of the adhesive layer 30 may be performed by pressing the laminated multilayer circuit board 201 from both sides using a pressure roller or a pressing device. Through the thickness adjustment step, the overall thickness accuracy of the adhesive layer 30 and the multilayer circuit substrate 201 can be improved. Furthermore, during pressure bonding, a heat treatment of heating at a temperature of 60° C. to 220° C. may be performed. Thereby, the multilayer circuit board 201 in which a plurality of circuit boards are integrally laminated can be manufactured. During the heat treatment, a cross-linked structure of imine bonds may be formed in the adhesive layer 30 by, for example, heat condensation of adhesive polyimide.

在本實施形態中,各電路基板101的黏接層30也具有使電路基板彼此黏接的作為黏結片的功能。因此,無需另行準備黏結片並使其介隔存在於電路基板間,可實現用以形成多層電路的製程及設備的簡略化、與材料的簡單化及成本削減。In this embodiment, the adhesive layer 30 of each circuit board 101 also functions as an adhesive sheet for bonding the circuit boards to each other. Therefore, there is no need to separately prepare an adhesive sheet and have it interposed between the circuit substrates, thereby achieving simplification of processes and equipment, simplification of materials, and cost reduction for forming multilayer circuits.

本實施形態的多層電路基板201的其他構成及效果與第一實施形態的多層電路基板200相同。 [實施例] The other structures and effects of the multilayer circuit board 201 of this embodiment are the same as those of the multilayer circuit board 200 of the first embodiment. [Example]

以下示出實施例,並對本發明的特徵進行更具體的說明。其中,本發明的範圍並不限定於實施例。再者,以下的實施例中,只要無特別說明,則各種測定、評價是基於下述內容。Examples are shown below and the features of the present invention are described in more detail. However, the scope of the present invention is not limited to the Examples. In addition, in the following examples, unless otherwise stated, various measurements and evaluations are based on the following contents.

[尺寸變化率的測定] 尺寸變化率的測定是按照以下順序進行。首先,使用150 mm見方的試驗片,以100 mm的間隔對乾膜抗蝕劑進行曝光、顯影,由此,形成位置測定用目標。在溫度23±2℃、相對濕度50±5%的環境中,測定蝕刻前(常態)的尺寸,之後,通過蝕刻(液溫40℃以下,時間10分鐘以內)去除試驗片的目標以外的銅。在溫度23±2℃、相對濕度50±5%的環境中靜置24±4小時後,測定蝕刻後的尺寸。算出MD方向(長邊方向)及TD方向(寬度方向)上的各3個部位的相對於常態的尺寸變化率,並將各自的平均值作為蝕刻後的尺寸變化率。蝕刻後尺寸變化率是利用下述數式而算出。 [Measurement of dimensional change rate] The dimensional change rate was measured in the following order. First, a 150 mm square test piece was used to expose and develop the dry film resist at intervals of 100 mm, thereby forming a target for position measurement. In an environment with a temperature of 23±2°C and a relative humidity of 50±5%, measure the dimensions before etching (normal), and then remove the copper outside the target area of the test piece by etching (liquid temperature 40°C or lower, time within 10 minutes) . After leaving for 24±4 hours in an environment with a temperature of 23±2°C and a relative humidity of 50±5%, measure the etched dimensions. The dimensional change rate from the normal state was calculated for each of three locations in the MD direction (longitudinal direction) and TD direction (width direction), and the average value was used as the dimensional change rate after etching. The dimensional change rate after etching is calculated using the following equation.

蝕刻後尺寸變化率(%)=(B-A)/A×100 A:蝕刻前的目標間距離 B:蝕刻後的目標間距離 Dimensional change rate after etching (%) = (B-A)/A×100 A: Distance between targets before etching B: Distance between targets after etching

其次,利用250℃的烘箱對本試驗片進行1小時加熱處理,測定其後的位置目標間的距離。算出MD方向(長邊方向)及TD方向(寬度方向)上的各3個部位的相對於蝕刻後的尺寸變化率,並以各自的平均值作為加熱處理後的尺寸變化率。加熱尺寸變化率是利用下述數式而算出。Next, this test piece was heated in an oven at 250° C. for 1 hour, and the distance between the positional targets was measured thereafter. The dimensional change rate after etching was calculated for each of three locations in the MD direction (longitudinal direction) and TD direction (width direction), and the average value was used as the dimensional change rate after heat treatment. The heating dimensional change rate is calculated using the following equation.

加熱後尺寸變化率(%)=(C-B)/B×100 B:蝕刻後的目標間距離 C:加熱後的目標間距離 Dimensional change rate after heating (%) = (C-B)/B×100 B: Distance between targets after etching C: Distance between targets after heating

[黏度的測定] 使用E型黏度計(博勒飛(Brookfield)公司製造,商品名:DV-II+Pro)測定25℃下的黏度。以扭矩為10%~90%的方式設定轉數,在開始測定後經過2分鐘後,讀取黏度穩定時的值。 [Measurement of viscosity] The viscosity at 25°C was measured using an E-type viscometer (manufactured by Brookfield Company, trade name: DV-II+Pro). Set the rotation speed so that the torque is 10% to 90%, and read the value when the viscosity is stable after 2 minutes have passed after starting the measurement.

[熱膨脹係數(CTE)的測定] 對3 mm×20 mm大小(size)的聚醯亞胺膜使用熱機械分析儀(布魯克(Bruker)公司製造,商品名:4000SA),一邊施加5.0 g的負荷一邊以一定的升溫速度自30℃升溫至300℃,進而在所述溫度下保持10分鐘後,以5℃/分鐘的速度進行冷卻,求出自250℃至100℃的平均熱膨脹係數(熱膨脹係數)。 [Measurement of coefficient of thermal expansion (CTE)] A thermomechanical analyzer (manufactured by Bruker, trade name: 4000SA) was used on a polyimide film of size 3 mm × 20 mm, and a load of 5.0 g was applied while increasing the temperature from 30°C to 30°C at a certain rate. The temperature was raised to 300°C, and the temperature was maintained for 10 minutes, followed by cooling at a rate of 5°C/min, and the average thermal expansion coefficient (thermal expansion coefficient) from 250°C to 100°C was determined.

[儲存彈性模數及玻璃化轉變溫度(Tg)的測定] 對5 mm×20 mm大小的樹脂片使用動態黏彈性測定裝置(DMA:UBM公司製造,商品名:E4000F)且在自30℃至400℃為止的升溫速度為4℃/分鐘、頻率11 Hz的條件下進行測定。另外,將彈性模數變化(tanδ)最大的溫度設為玻璃化轉變溫度。 [Measurement of storage elastic modulus and glass transition temperature (Tg)] A dynamic viscoelasticity measuring device (DMA: manufactured by UBM Co., Ltd., trade name: E4000F) was used for a resin sheet of 5 mm measured under conditions. In addition, the temperature at which the elastic modulus change (tan δ) reaches the maximum is defined as the glass transition temperature.

[介電常數及介電損耗正切的測定] 使用矢量網路分析儀(Vector Network Analyzer)(安捷倫(Agilent)公司製造,商品名E8363C)及分離介電諧振器(Split Post Dielectric Resonator,SPDR),測定10 GHz下的樹脂片的介電常數及介電損耗正切。再者,測定中所使用的材料是在溫度:24℃~26℃、濕度45%~55%RH的條件下放置24小時。 [Measurement of dielectric constant and dielectric loss tangent] Using a Vector Network Analyzer (manufactured by Agilent, trade name E8363C) and a Split Post Dielectric Resonator (SPDR), the dielectric constant and the dielectric constant of the resin sheet at 10 GHz were measured. Dielectric loss tangent. In addition, the materials used in the measurement are left for 24 hours at a temperature of 24°C to 26°C and a humidity of 45% to 55%RH.

[銅箔的表面粗糙度的測定] 使用原子力顯微鏡(Atomic Force Microscope,AFM)(布魯克AXS(Bruker AXS)公司製造,商品名:維度圖標(Dimension Icon)型掃描探針顯微鏡(Scanning Probe Microscope,SPM))、探針(布魯克AXS(Bruker AXS)公司製造,商品名:TESPA(NCHV),頂端曲率半徑10 nm,彈簧常數42 N/m),以輕敲模式(tapping mode)對銅箔表面的80 μm×80 μm的範圍進行測定,並求出十點平均粗糙度(Rzjis)。 [Measurement of surface roughness of copper foil] An atomic force microscope (AFM) (manufactured by Bruker AXS, trade name: Dimension Icon scanning probe microscope (SPM)) and a probe (Bruker AXS) were used. AXS) company, trade name: TESPA (NCHV), tip radius of curvature 10 nm, spring constant 42 N/m), measure the 80 μm × 80 μm range of the copper foil surface in tapping mode. And find the ten-point average roughness (Rzjis).

合成例中使用的簡稱表示以下的化合物。 ○BPDA:3,3',4,4'-聯苯基四羧酸二酐 ○BPADA:2,2-雙[4-(3,4-二羧基苯氧基)苯基]丙烷二酐 ○PMDA:均苯四甲酸二酐 ○BTDA:3,3',4,4'-二苯甲酮四羧酸二酐 ○m-TB:2,2'-二甲基-4,4'-二氨基聯苯 ○TPE-R:1,3-雙(4-氨基苯氧基)苯 ○雙苯胺-M:1,3-雙[2-(4-氨基苯基)-2-丙基]苯 ○BAPP:2,2-雙[4-(4-氨基苯氧基)苯基]丙烷 ○DDA:碳數36的脂肪族二胺(日本禾達(CRODA Japan)股份有限公司製造,商品名:普利阿敏(PRIAMINE)1074,胺值:205 mgKOH/g,環狀結構及鏈狀結構的二聚物二胺的混合物,二聚物成分的含量:95重量%以上) ○DMAc:N,N-二甲基乙醯胺 ○NMP:N-甲基-2-吡咯烷酮 ○N-12:十二烷二酸二醯肼 ○OP935:有機次膦酸鋁鹽(日本科萊恩(Clariant Japan)公司製造,商品名:艾庫斯利特(Exolit)OP935) ○R710:(商品名,普林泰科(Printec)(股)製造,雙酚型環氧樹脂,環氧當量170,常溫下為液狀,重量平均分子量:約340) ○VG3101L:(商品名,普林泰科(Printec)(股)製造,多官能環氧樹脂,環氧當量:210,軟化點39℃~46℃) ○SR35K:(商品名,普林泰科(Printec)股份有限公司製造,環氧樹脂,環氧當量:930~940,軟化點:86℃~98℃) ○YDCN-700-10:(商品名,日鐵化學&材料股份有限公司製造,甲酚酚醛清漆型環氧樹脂,環氧當量210,軟化點75℃~85℃) ○米萊庫斯(milex)XLC-LL:(商品名,三井化學(股)製造,酚樹脂,羥基當量:175,軟化點:77℃,吸水率:1質量%,加熱質量減少率:4質量%) ○HE200C-10:(商品名,空氣水(AIR WATER)(股)製造,酚樹脂,羥基當量:200,軟化點:65℃~76℃,吸水率:1質量%,加熱質量減少率:4質量%) ○HE910-10:(商品名,空氣水(AIR WATER)(股)製造,酚樹脂,羥基當量:101,軟化點:83℃,吸水率:1質量%,加熱質量減少率:3質量%) ○SC1030-HJA:(商品名,阿德瑪科技(Admatechs)(股)製造,二氧化矽填料分散液,平均粒徑:0.25 μm) ○艾羅西爾(Aerosil)R972:(商品名,日本艾羅西爾(Aerosil Japan)(股)製造,二氧化矽,平均粒徑:0.016 μm) ○丙烯酸橡膠(acryl gum)HTR-860P-30B-CHN:(樣品名,帝國化學產業(股)製造,重量平均分子量:23萬,縮水甘油基官能基單體比率:8%,Tg:-7℃) ○丙烯酸橡膠(acryl gum)HTR-860P-3CSP:(樣品名,帝國化學產業(股)製造,重量平均分子量:80萬,縮水甘油基官能基單體比率:3%,Tg:-7℃) ○A-1160:(商品名,GE東芝(股)製造,γ-脲基丙基三乙氧基矽烷) ○A-189:(商品名,GE東芝(股)製造,γ-巰基丙基三甲氧基矽烷) ○固左魯(Curezol)2PZ-CN:(商品名,四國化成工業(股)製造,1-氰基乙基-2-苯基咪唑) ○RE-810NM:(商品名,日本化藥股份有限公司製造,二烯丙基雙酚A二縮水甘油基醚(性狀:液狀)) ○佛來特(phoret)SCS:(商品名:綜研化學股份有限公司製造,含有苯乙烯基的丙烯酸聚合物(Tg:70℃,重量平均分子量:15000)) ○BMI-1:(商品名,東京化成股份有限公司製造,4,4'-雙馬來醯亞胺二苯基甲烷) ○TPPK:(商品名:東京化成股份有限公司製造,四苯基鏻四苯基硼酸鹽) ○HP-P1:(商品名,水島合金鐵股份有限公司製造,氮化硼填料) The abbreviations used in the synthesis examples represent the following compounds. ○BPDA: 3,3',4,4'-biphenyltetracarboxylic dianhydride ○BPADA: 2,2-bis[4-(3,4-dicarboxyphenoxy)phenyl]propane dianhydride ○PMDA: Pyromellitic dianhydride ○BTDA: 3,3',4,4'-benzophenone tetracarboxylic dianhydride ○m-TB: 2,2'-dimethyl-4,4'-diaminobiphenyl ○TPE-R: 1,3-bis(4-aminophenoxy)benzene ○Bisaniline-M: 1,3-bis[2-(4-aminophenyl)-2-propyl]benzene ○BAPP: 2,2-bis[4-(4-aminophenoxy)phenyl]propane ○DDA: Aliphatic diamine with 36 carbon atoms (manufactured by CRODA Japan Co., Ltd., trade name: PRIAMINE 1074, amine value: 205 mgKOH/g, cyclic structure and chain structure A mixture of dimer diamines with a structure, the content of the dimer component is: 95% by weight or more) ○DMAc: N,N-dimethylacetamide ○NMP: N-methyl-2-pyrrolidone ○N-12: Dodecanedioic acid dihydrazine ○OP935: Organic phosphinic acid aluminum salt (manufactured by Clariant Japan, trade name: Exolit OP935) ○R710: (trade name, manufactured by Printec Co., Ltd., bisphenol-type epoxy resin, epoxy equivalent 170, liquid at room temperature, weight average molecular weight: about 340) ○VG3101L: (trade name, manufactured by Printec (Co., Ltd.), multifunctional epoxy resin, epoxy equivalent: 210, softening point 39°C to 46°C) ○SR35K: (trade name, manufactured by Printec Co., Ltd., epoxy resin, epoxy equivalent: 930~940, softening point: 86℃~98℃) ○YDCN-700-10: (Trade name, manufactured by Nippon Steel Chemical & Materials Co., Ltd., cresol novolak type epoxy resin, epoxy equivalent 210, softening point 75℃~85℃) ○Milex (milex) mass%) ○HE200C-10: (trade name, manufactured by AIR WATER Co., Ltd., phenolic resin, hydroxyl equivalent: 200, softening point: 65°C to 76°C, water absorption: 1% by mass, heating mass reduction rate: 4 mass%) ○HE910-10: (trade name, manufactured by AIR WATER Co., Ltd., phenolic resin, hydroxyl equivalent: 101, softening point: 83°C, water absorption: 1 mass%, heating mass reduction rate: 3 mass%) ○SC1030-HJA: (trade name, manufactured by Admatechs (Co., Ltd.), silica filler dispersion, average particle size: 0.25 μm) ○Aerosil R972: (trade name, manufactured by Aerosil Japan Co., Ltd., silica, average particle size: 0.016 μm) ○Acrylic rubber (acryl gum) HTR-860P-30B-CHN: (Sample name, manufactured by Teikoku Chemical Industry Co., Ltd., weight average molecular weight: 230,000, glycidyl functional group monomer ratio: 8%, Tg: -7 ℃) ○Acrylic rubber (acryl gum) HTR-860P-3CSP: (Sample name, manufactured by Teikoku Chemical Industry Co., Ltd., weight average molecular weight: 800,000, glycidyl functional group monomer ratio: 3%, Tg: -7°C) ○A-1160: (trade name, manufactured by GE Toshiba Corporation, γ-ureidopropyltriethoxysilane) ○A-189: (trade name, manufactured by GE Toshiba Corporation, γ-mercaptopropyltrimethoxysilane) ○Curezol 2PZ-CN: (trade name, manufactured by Shikoku Chemical Industry Co., Ltd., 1-cyanoethyl-2-phenylimidazole) ○RE-810NM: (trade name, manufactured by Nippon Kayaku Co., Ltd., diallyl bisphenol A diglycidyl ether (properties: liquid)) ○Phoret SCS: (trade name: styrene-based acrylic polymer manufactured by Soken Chemical Co., Ltd. (Tg: 70°C, weight average molecular weight: 15,000)) ○BMI-1: (trade name, manufactured by Tokyo Chemical Industry Co., Ltd., 4,4'-bismaleimide diphenylmethane) ○TPPK: (Trade name: Tetraphenylphosphonium tetraphenylborate manufactured by Tokyo Chemical Industry Co., Ltd.) ○HP-P1: (trade name, manufactured by Mizushima Alloy Iron Co., Ltd., boron nitride filler)

(合成例1) <黏接層用的樹脂溶液A的製備> 對包含為表1中的品名及組成比(單位:質量份)的作為(a)熱硬化性樹脂的環氧樹脂及酚樹脂、(c)無機填料的組合物添加環己酮,進行攪拌混合。向其中添加表1中所示的作為(b)高分子量成分的丙烯酸橡膠並攪拌,進而,添加表1中所示的(e)偶合劑及(d)硬化促進劑,進行攪拌直至各成分變均勻為止,獲得黏接層用的樹脂溶液A。 (Synthesis example 1) <Preparation of resin solution A for adhesive layer> Cyclohexanone was added to a composition containing (a) an epoxy resin and a phenol resin as thermosetting resins and (c) an inorganic filler with the product names and composition ratios (unit: parts by mass) in Table 1, and the mixture was stirred. . The acrylic rubber as the (b) high molecular weight component shown in Table 1 was added thereto and stirred. Furthermore, the (e) coupling agent and (d) hardening accelerator shown in Table 1 were added and stirred until each component became Until it becomes uniform, the resin solution A for the adhesive layer is obtained.

[表1] 分類 名稱 合成例1 環氧樹脂 R710 24 VG3101L 21 SR35K 20 YDCN-700-10 1.4 酚樹脂 米萊庫斯(milex)XLC-LL 1.2 HE910-10 17 HE200C-10 15 無機填料 艾羅西爾(Aerosil)R972 0.82 SC1030-HJA 61 偶合劑 A-189 0.29 A-1160 0.59 硬化促進劑 固左魯(Curezol)2PZ-CN 0.025 丙烯酸橡膠 HTR-860P-30B-CHN 27 HTR-860P-3CSP 12 [Table 1] Classification Name Synthesis example 1 Epoxy resin R710 twenty four VG3101L twenty one SR35K 20 YDCN-700-10 1.4 Phenolic resin Milex XLC-LL 1.2 HE910-10 17 HE200C-10 15 Inorganic filler Aerosil R972 0.82 SC1030-HJA 61 Coupling agent A-189 0.29 A-1160 0.59 hardening accelerator Curezol 2PZ-CN 0.025 acrylic rubber HTR-860P-30B-CHN 27 HTR-860P-3CSP 12

(合成例2) <聚醯亞胺樹脂(PI-1)的合成及黏接層用的樹脂溶液B的製備> 在裝設有溫度計、攪拌機、冷卻管、及氮氣流入管的300 mL燒瓶中投入1,3-雙(3-氨基丙基)四甲基二矽氧烷(信越化學工業股份有限公司製造,商品名:LP-7100)15.53 g、聚氧丙烯二胺(巴斯夫(BASF)股份有限公司製造,商品名:D400,分子量:450)28.13 g、及NMP 100.0 g並進行攪拌,製備反應液。在二胺溶解後,一邊在冰浴中使燒瓶冷卻,一邊向反應液中每次少量地添加預先通過自無水乙酸的再結晶而精製的4,4'-氧基二鄰苯二甲酸二酐32.30 g。在常溫(25℃)下反應8小時後,添加二甲苯67.0 g,並且一邊吹入氮氣一邊在180℃下進行加熱,由此將二甲苯與水一起共沸去除。將所述反應液注入至大量的水中,通過過濾採取沉澱的樹脂,進行乾燥而獲得聚醯亞胺樹脂(PI-1)。利用凝膠滲透色譜法(gel permeation chromatography,GPC)測定所獲得的聚醯亞胺樹脂(PI-1)的分子量,結果,以聚苯乙烯換算計,數量平均分子量Mn=22400,重量平均分子量Mw=70200。 使用所述獲得的聚醯亞胺樹脂(PI-1)並以表2中所示的組成比(單位:質量份)調配各成分,獲得黏接層用的樹脂溶液B。 (Synthesis example 2) <Synthesis of polyimide resin (PI-1) and preparation of resin solution B for adhesive layer> 1,3-Bis(3-aminopropyl)tetramethyldisiloxane (manufactured by Shin-Etsu Chemical Industry Co., Ltd., commercial product) was placed in a 300 mL flask equipped with a thermometer, a stirrer, a cooling tube, and a nitrogen gas inflow tube. Name: LP-7100) 15.53 g, polyoxypropylene diamine (manufactured by BASF Co., Ltd., trade name: D400, molecular weight: 450) 28.13 g, and NMP 100.0 g were stirred to prepare a reaction solution. After the diamine is dissolved, 4,4'-oxydiphthalic dianhydride, which has been previously purified by recrystallization from anhydrous acetic acid, is added to the reaction solution in small amounts while cooling the flask in an ice bath. 32.30g. After reacting at normal temperature (25°C) for 8 hours, 67.0 g of xylene was added, and the mixture was heated at 180°C while blowing nitrogen gas, thereby azeotropically removing the xylene and water. The reaction liquid was poured into a large amount of water, and the precipitated resin was collected by filtration and dried to obtain polyimide resin (PI-1). The molecular weight of the obtained polyimide resin (PI-1) was measured using gel permeation chromatography (GPC). As a result, in terms of polystyrene conversion, the number average molecular weight Mn=22400 and the weight average molecular weight Mw =70200. The obtained polyimide resin (PI-1) was used to prepare each component at the composition ratio (unit: parts by mass) shown in Table 2 to obtain a resin solution B for the adhesive layer.

[表2] 分類 名稱 合成例2 熱塑性樹脂 PI-1 100 反應性增塑劑 RE-810NM 40 具有苯乙烯基的化合物 佛來特(phoret)SCS 40 具有馬來醯亞胺基的化合物 BMI-1 40 硬化促進劑 TPPK 0.2 無機填料 HP-P1 22 溶劑 NMP 270 [Table 2] Classification Name Synthesis example 2 thermoplastic resin PI-1 100 reactive plasticizer RE-810NM 40 Compounds with styrene group Phoret SCS 40 Compounds with maleimide groups BMI-1 40 hardening accelerator TPPK 0.2 Inorganic filler HP-P1 twenty two Solvent NMP 270

(合成例3) <黏接層用的樹脂溶液C的製備> 在帶有氮氣導入管、攪拌機、熱電偶、迪恩-斯塔克分水器(Dean-Stark trap)、冷卻管的500 mL的四口燒瓶中裝入44.92 g的BTDA(0.139莫耳)、75.08 g的DDA(0.141莫耳)、168 g的NMP及112 g的二甲苯,在40℃下混合30分鐘,製備聚醯胺酸溶液。將所述聚醯胺酸溶液升溫至190℃,以4小時進行加熱並進行攪拌,將餾出的水及二甲苯去除至系統外。其後,冷卻至100℃,添加112 g的二甲苯并進行攪拌,進而冷卻至30℃,結束醯亞胺化,獲得黏接層用的樹脂溶液C(固體成分:29.5重量%,重量平均分子量:75,700)。 (Synthesis example 3) <Preparation of resin solution C for adhesive layer> Put 44.92 g of BTDA (0.139 mol) into a 500 mL four-necked flask equipped with a nitrogen inlet tube, a stirrer, a thermocouple, a Dean-Stark trap, and a cooling tube. 75.08 g of DDA (0.141 mole), 168 g of NMP and 112 g of xylene were mixed at 40°C for 30 minutes to prepare a polyamic acid solution. The polyamide solution was heated to 190° C., heated and stirred for 4 hours, and the distilled water and xylene were removed from the system. Thereafter, the solution was cooled to 100°C, 112 g of xylene was added and stirred, and further cooled to 30°C to complete the imidization to obtain a resin solution C for the adhesive layer (solid content: 29.5% by weight, weight average molecular weight :75,700).

(合成例4) <黏接層用的樹脂溶液D的製備> 將42.51 g的BPADA(0.082莫耳)、34.30 g的DDA(0.066莫耳)、6.56 g的BAPP(0.016莫耳)、208 g的NMP及112 g的二甲苯設為原料組成,除此以外,與合成例3同樣地進行而製備聚醯胺酸溶液。與合成例3同樣地對所述聚醯胺酸溶液進行處理,獲得黏接層用的樹脂溶液D(固體成分:30.0重量%,重量平均分子量:65,000)。 (Synthesis example 4) <Preparation of resin solution D for adhesive layer> Let 42.51 g of BPADA (0.082 mole), 34.30 g of DDA (0.066 mole), 6.56 g of BAPP (0.016 mole), 208 g of NMP and 112 g of xylene be used as the raw material composition. In addition, The same procedure as in Synthesis Example 3 was carried out to prepare a polyamide solution. The polyamic acid solution was processed in the same manner as in Synthesis Example 3 to obtain a resin solution D for an adhesive layer (solid content: 30.0% by weight, weight average molecular weight: 65,000).

(合成例5) <絕緣樹脂層用的聚醯胺酸溶液1的製備> 在氮氣流下,向反應槽中投入64.20 g的m-TB(0.302莫耳)及5.48 g的雙苯胺-M(0.016莫耳)以及聚合後的固體成分濃度為15重量%的量的DMAc,在室溫下進行攪拌並使其溶解。其次,添加34.20 g的PMDA(0.157莫耳)及46.13 g的BPDA(0.157莫耳),之後,在室溫下繼續攪拌3小時而進行聚合反應,製備聚醯胺酸溶液1(黏度:26,500 cps)。 (Synthesis example 5) <Preparation of polyamide solution 1 for insulating resin layer> Under nitrogen flow, 64.20 g of m-TB (0.302 mole), 5.48 g of bisaniline-M (0.016 mole) and DMAc in an amount such that the post-polymerization solid content concentration was 15% by weight were put into the reaction tank. Stir and dissolve at room temperature. Next, 34.20 g of PMDA (0.157 mol) and 46.13 g of BPDA (0.157 mol) were added, and then the polymerization reaction was continued at room temperature for 3 hours to prepare polyamide solution 1 (viscosity: 26,500 cps ).

(合成例6) <絕緣樹脂層用的聚醯胺酸溶液2的製備> 將69.56 g的m-TB(0.328莫耳)、542.75 g的TPE-R(1.857莫耳)、聚合後的固體成分濃度為12重量%的量的DMAc、194.39 g的PMDA(0.891莫耳)及393.31 g的BPDA(1.337莫耳)設為原料組成,除此以外,與合成例3同樣地進行而製備聚醯胺酸溶液2(黏度:2,650 cps)。 (Synthesis example 6) <Preparation of polyamide solution 2 for insulating resin layer> 69.56 g of m-TB (0.328 mole), 542.75 g of TPE-R (1.857 mole), DMAc in an amount such that the solid concentration after polymerization is 12% by weight, 194.39 g of PMDA (0.891 mole) and Except having used 393.31 g of BPDA (1.337 mol) as the raw material composition, it was carried out similarly to Synthesis Example 3, and polyamic acid solution 2 (viscosity: 2,650 cps) was prepared.

(製作例1) <黏接層用的樹脂片A的製備> 以乾燥後的厚度為50 μm的方式將黏接層用的樹脂溶液A塗敷於脫模基材(縱×橫×厚度=320 mm×240 mm×25 μm)的矽酮處理面上,之後,在80℃下加熱乾燥15分鐘,進而在120℃下進行15分鐘乾燥,之後,自脫模基材上剝離,由此製備樹脂片A。另外,關於樹脂片A,為了評價硬化後的物性,而在120℃的烘箱中加熱2小時,並在170℃下加熱3小時。此時,關於硬化後樹脂片A,Tg為95℃,50℃下的儲存彈性模數為960 MPa,180℃至260℃的範圍中的儲存彈性模數的最大值為7 MPa。 (Production example 1) <Preparation of resin sheet A for adhesive layer> Apply the resin solution A for the adhesive layer to the silicone-treated surface of the release base material (length × width × thickness = 320 mm × 240 mm × 25 μm) so that the thickness after drying is 50 μm. , the resin sheet A was prepared by heating and drying at 80° C. for 15 minutes, further drying at 120° C. for 15 minutes, and then peeling it off from the release base material. In addition, in order to evaluate the physical properties after hardening, the resin sheet A was heated in an oven at 120°C for 2 hours and at 170°C for 3 hours. At this time, the cured resin sheet A has a Tg of 95°C, a storage elastic modulus at 50°C of 960 MPa, and a maximum storage elastic modulus in the range of 180°C to 260°C of 7 MPa.

(製作例2) <黏接層用的樹脂片B的製備> 以乾燥後的厚度為50 μm的方式將黏接層用的樹脂溶液B塗敷於脫模基材(縱×橫×厚度=320 mm×240 mm×25 μm)的矽酮處理面上,之後,在80℃下加熱乾燥15分鐘,進而在120℃下進行15分鐘乾燥,之後,自脫模基材上剝離,由此製備樹脂片B。另外,關於樹脂片B,為了評價硬化後的物性,而在120℃的烘箱中加熱2小時,並在170℃下加熱3小時。此時,關於硬化後樹脂片B,Tg為100℃以下,50℃下的儲存彈性模數為1800 MPa以下,180℃至260℃的範圍中的儲存彈性模數的最大值為70 MPa。 (Production example 2) <Preparation of resin sheet B for adhesive layer> Apply the resin solution B for the adhesive layer to the silicone-treated surface of the release base material (length × width × thickness = 320 mm × 240 mm × 25 μm) so that the thickness after drying is 50 μm. , the resin sheet B was prepared by heating and drying at 80° C. for 15 minutes, further drying at 120° C. for 15 minutes, and then peeling it off from the release base material. In addition, in order to evaluate the physical properties after hardening, the resin sheet B was heated in an oven at 120° C. for 2 hours and at 170° C. for 3 hours. At this time, the cured resin sheet B has a Tg of 100°C or less, a storage elastic modulus at 50°C of 1800 MPa or less, and a maximum storage elastic modulus in the range of 180°C to 260°C of 70 MPa.

(製作例3) <黏接層用的樹脂片C的製備> 在黏接層用的樹脂溶液C的169.49 g(以固體成分計為50 g)中調配1.8 g的N-12(0.0036莫耳)及12.5 g的OP935,並添加6.485 g的NMP與19.345 g的二甲苯進行稀釋,製備聚醯亞胺清漆1。 (Production example 3) <Preparation of resin sheet C for adhesive layer> Mix 1.8 g of N-12 (0.0036 mol) and 12.5 g of OP935 into 169.49 g of the resin solution C for the adhesive layer (50 g in terms of solid content), and add 6.485 g of NMP and 19.345 g of Dilute with xylene to prepare polyimide varnish 1.

以乾燥後的厚度為50 μm的方式將聚醯亞胺清漆1塗敷於脫模基材(縱×橫×厚度=320 mm×240 mm×25 μm)的矽酮處理面上,之後,在80℃下加熱乾燥15分鐘,並自脫模基材上剝離,由此製備樹脂片C。樹脂片C的Tg為78℃,50℃下的儲存彈性模數為800 MPa,180℃至260℃的範圍中的儲存彈性模數的最大值為10 MPa。另外,介電常數(Dk)及介電損耗正切(Df)分別為2.68、0.0028。Apply polyimide varnish 1 to the silicone-treated surface of the release base material (length × width × thickness = 320 mm × 240 mm × 25 μm) so that the thickness after drying is 50 μm, and then The resin sheet C was prepared by heating and drying at 80° C. for 15 minutes and peeling it from the release base material. The Tg of the resin sheet C is 78°C, the storage elastic modulus at 50°C is 800 MPa, and the maximum value of the storage elastic modulus in the range of 180°C to 260°C is 10 MPa. In addition, the dielectric constant (Dk) and dielectric loss tangent (Df) are 2.68 and 0.0028 respectively.

(製作例4) <黏接層用的樹脂片D的製備> 以乾燥後的厚度為50 μm的方式將黏接層用的樹脂溶液D塗敷於脫模基材(縱×橫×厚度=320 mm×240 mm×25 μm)的矽酮處理面上,之後,在80℃下加熱乾燥15分鐘,並自脫模基材上剝離,由此製備樹脂片D。樹脂片D的Tg為82℃,50℃下的儲存彈性模數為1800 MPa以下,180℃至260℃的範圍中的儲存彈性模數的最大值為2 MPa以下。另外,介電常數(Dk)及介電損耗正切(Df)分別為2.80、0.0026。 (Production example 4) <Preparation of resin sheet D for adhesive layer> Apply the resin solution D for the adhesive layer to the silicone-treated surface of the release base material (length × width × thickness = 320 mm × 240 mm × 25 μm) so that the thickness after drying is 50 μm. , heated and dried at 80° C. for 15 minutes, and peeled off from the release base material, thereby preparing a resin sheet D. The Tg of the resin sheet D is 82°C, the storage elastic modulus at 50°C is 1800 MPa or less, and the maximum value of the storage elastic modulus in the range of 180°C to 260°C is 2 MPa or less. In addition, the dielectric constant (Dk) and dielectric loss tangent (Df) are 2.80 and 0.0026 respectively.

(製作例5) <單面覆金屬積層板的製備> 在銅箔1(電解銅箔,厚度:12 μm,樹脂層側的表面粗糙度Rz:0.6 μm)上,以硬化後的厚度為約2 μm~3 μm的方式均勻地塗布聚醯胺酸溶液2,之後,在120℃下進行加熱乾燥而去除溶媒。其次,在其上以硬化後的厚度為約21 μm的方式均勻地塗布聚醯胺酸溶液1,在120℃下進行加熱乾燥而去除溶媒。進而,在其上以硬化後的厚度為約2 μm~3 μm的方式均勻地塗布聚醯胺酸溶液2,之後,在120℃下進行加熱乾燥而去除溶媒。進而,自120℃起至360℃為止進行階段性的熱處理,結束醯亞胺化,製備單面覆金屬積層板1。單面覆金屬積層板1的尺寸變化率如下所述。 MD方向(長邊方向)上的蝕刻後尺寸變化率:0.01% TD方向(寬度方向)上的蝕刻後尺寸變化率:-0.04% MD方向(長邊方向)上的加熱後尺寸變化率:-0.03% TD方向(寬度方向)上的加熱後尺寸變化率:-0.01% 另外,使用氯化鐵水溶液將單面覆金屬積層板1的銅箔1蝕刻去除而製備的聚醯亞胺膜1(厚度:25 μm)的CTE為20.0 ppm/K,介電常數(Dk)及介電損耗正切(Df)分別為3.40、0.0029。 (Production example 5) <Preparation of single-sided metal-clad laminate> On copper foil 1 (electrolytic copper foil, thickness: 12 μm, surface roughness Rz on the resin layer side: 0.6 μm), the polyamide solution is evenly applied so that the thickness after hardening is about 2 μm to 3 μm. 2. Then, heat and dry at 120°C to remove the solvent. Next, the polyamide solution 1 was evenly coated on it so that the thickness after hardening would be about 21 μm, and the solution was heated and dried at 120° C. to remove the solvent. Furthermore, the polyamide solution 2 is uniformly coated thereon so that the thickness after hardening is about 2 μm to 3 μm, and then heated and dried at 120° C. to remove the solvent. Furthermore, stepwise heat treatment is performed from 120°C to 360°C to complete the imidization, and a single-sided metal-clad laminate 1 is prepared. The dimensional change rate of the single-sided metal-clad laminate 1 is as follows. Dimensional change rate after etching in MD direction (long side direction): 0.01% Dimensional change rate after etching in TD direction (width direction): -0.04% Dimensional change rate after heating in MD direction (long side direction): -0.03% Dimensional change rate after heating in TD direction (width direction): -0.01% In addition, the polyimide film 1 (thickness: 25 μm) prepared by etching and removing the copper foil 1 of the single-sided metal-clad laminate 1 using an aqueous ferric chloride solution has a CTE of 20.0 ppm/K and a dielectric constant (Dk) and dielectric loss tangent (Df) are 3.40 and 0.0029 respectively.

[實施例1] 以乾燥後的厚度為50 μm的方式將黏接層用的樹脂溶液A塗敷於單面覆金屬積層板1的樹脂面上,之後,在80℃下加熱乾燥15分鐘,進而在120℃下進行15分鐘乾燥,由此製備帶黏接層的單面覆金屬積層板1。另外,關於帶黏接層的單面覆金屬積層板1,為了評價黏接層硬化後的物性,而在120℃的烘箱中加熱2小時,並在170℃下加熱3小時。加熱後的帶黏接層的單面覆金屬積層板1的評價結果如下所述。 MD方向上的蝕刻後尺寸變化率:-0.05% TD方向上的蝕刻後尺寸變化率:-0.02% MD方向上的加熱後尺寸變化率:-0.01% TD方向上的加熱後尺寸變化率:-0.03% 加熱後的帶黏接層的單面覆金屬積層板1的尺寸變化並無問題。另外,將加熱後的帶黏接層的單面覆金屬積層板1的銅箔1蝕刻去除而製備的樹脂積層體1(厚度:75 μm)的CTE為26.2 ppm/K。 [Example 1] The resin solution A for the adhesive layer is applied to the resin surface of the single-sided metal-clad laminate 1 so that the dried thickness is 50 μm, and then heated and dried at 80°C for 15 minutes, and then dried at 120°C. Drying was performed for 15 minutes, thereby preparing a single-sided metal-clad laminate 1 with an adhesive layer. In addition, in order to evaluate the physical properties of the single-sided metal-clad laminate 1 with an adhesive layer after hardening of the adhesive layer, it was heated in an oven at 120°C for 2 hours and at 170°C for 3 hours. The evaluation results of the heated single-sided metal-clad laminate 1 with an adhesive layer are as follows. Dimensional change rate after etching in MD direction: -0.05% Dimensional change rate after etching in TD direction: -0.02% Dimensional change rate after heating in MD direction: -0.01% Dimensional change rate after heating in TD direction: -0.03% There is no problem in the dimensional change of the single-sided metal-clad laminate 1 with an adhesive layer after heating. In addition, the CTE of the resin laminate 1 (thickness: 75 μm) prepared by etching and removing the copper foil 1 of the heated single-sided metal-clad laminate 1 with an adhesive layer was 26.2 ppm/K.

[實施例2] 以乾燥後的厚度為50 μm的方式將黏接層用的樹脂溶液B塗敷於單面覆金屬積層板1的樹脂面上,之後,在80℃下加熱乾燥15分鐘,進而在120℃下進行15分鐘乾燥,由此製備帶黏接層的單面覆金屬積層板2。另外,關於帶黏接層的單面覆金屬積層板2,為了評價黏接層硬化後的物性,而在120℃的烘箱中加熱2小時,並在170℃下加熱3小時。加熱後的帶黏接層的單面覆金屬積層板2的評價結果如下所述。 MD方向上的蝕刻後尺寸變化率:-0.08% TD方向上的蝕刻後尺寸變化率:-0.06% MD方向上的加熱後尺寸變化率:-0.03% TD方向上的加熱後尺寸變化率:-0.06% 加熱後的帶黏接層的單面覆金屬積層板2的尺寸變化並無問題。另外,將加熱後的帶黏接層的單面覆金屬積層板2的銅箔1蝕刻去除而製備的樹脂積層體2(厚度:75 μm)的CTE為25.0 ppm/K。 [Example 2] The resin solution B for the adhesive layer is applied to the resin surface of the single-sided metal-clad laminate 1 so that the thickness after drying is 50 μm, and then heated and dried at 80°C for 15 minutes, and then dried at 120°C. Drying was performed for 15 minutes, thereby preparing a single-sided metal-clad laminate 2 with an adhesive layer. In addition, in order to evaluate the physical properties of the single-sided metal-clad laminate 2 with an adhesive layer after hardening of the adhesive layer, it was heated in an oven at 120° C. for 2 hours and at 170° C. for 3 hours. The evaluation results of the heated single-sided metal-clad laminate 2 with an adhesive layer are as follows. Dimensional change rate after etching in MD direction: -0.08% Dimensional change rate after etching in TD direction: -0.06% Dimensional change rate after heating in MD direction: -0.03% Dimensional change rate after heating in TD direction: -0.06% There is no problem in the dimensional change of the heated single-sided metal-clad laminate 2 with an adhesive layer. In addition, the CTE of the resin laminate 2 (thickness: 75 μm) prepared by etching and removing the copper foil 1 of the heated single-sided metal-clad laminate 2 with an adhesive layer was 25.0 ppm/K.

[實施例3] 以乾燥後的厚度為50 μm的方式將聚醯亞胺清漆1塗敷於單面覆金屬積層板1的樹脂面上,之後,在80℃下加熱乾燥15分鐘,由此製備帶黏接層的單面覆金屬積層板3。另外,關於帶黏接層的單面覆金屬積層板3,在180℃的烘箱中加熱1分鐘且在150℃下加熱30分鐘後,進行評價,結果為如下所述。 MD方向上的蝕刻後尺寸變化率:-0.05% TD方向上的蝕刻後尺寸變化率:-0.04% MD方向上的加熱後尺寸變化率:0.05% TD方向上的加熱後尺寸變化率:0.01% 加熱後的帶黏接層的單面覆金屬積層板3的尺寸變化並無問題。另外,將加熱後的帶黏接層的單面覆金屬積層板3的銅箔1蝕刻去除而製備的樹脂積層體3(厚度:75 μm)的CTE為25.6 ppm/K,介電常數(Dk)及介電損耗正切(Df)分別為2.92、0.0028。 [Example 3] The polyimide varnish 1 is applied to the resin surface of the single-sided metal-clad laminate 1 so that the thickness after drying is 50 μm, and then heated and dried at 80°C for 15 minutes to prepare an adhesive layer. Single-sided metal-clad laminate 3. In addition, the single-sided metal-clad laminated board 3 with an adhesive layer was heated in an oven at 180° C. for 1 minute and at 150° C. for 30 minutes, and then evaluated. The results were as follows. Dimensional change rate after etching in MD direction: -0.05% Dimensional change rate after etching in TD direction: -0.04% Dimensional change rate after heating in MD direction: 0.05% Dimensional change rate after heating in TD direction: 0.01% There is no problem in the dimensional change of the single-sided metal-clad laminate 3 with an adhesive layer after heating. In addition, the resin laminate 3 (thickness: 75 μm) prepared by etching and removing the copper foil 1 of the heated single-sided metal-clad laminate 3 with an adhesive layer has a CTE of 25.6 ppm/K and a dielectric constant (Dk ) and dielectric loss tangent (Df) are 2.92 and 0.0028 respectively.

[實施例4] 以乾燥後的厚度為50 μm的方式將黏接層用的樹脂溶液D塗敷於單面覆金屬積層板1的樹脂面上,之後,在80℃下加熱乾燥15分鐘,由此製備帶黏接層的單面覆金屬積層板4。另外,關於帶黏接層的單面覆金屬積層板4,在180℃的烘箱中加熱1分鐘且在150℃下加熱30分鐘後,進行評價,結果,尺寸變化並無問題,介電常數(Dk)及介電損耗正切(Df)分別為3.00、0.0027。 [Example 4] The resin solution D for the adhesive layer is applied to the resin surface of the single-sided metal-clad laminate 1 so that the thickness after drying is 50 μm, and then heated and dried at 80°C for 15 minutes to prepare an adhesive tape. The single-sided metal-clad laminate 4 of the connecting layer. In addition, the single-sided metal-clad laminate 4 with an adhesive layer was evaluated after being heated in an oven at 180°C for 1 minute and at 150°C for 30 minutes. As a result, there was no problem with dimensional changes, and the dielectric constant ( Dk) and dielectric loss tangent (Df) are 3.00 and 0.0027 respectively.

[實施例5] 將液晶聚合物膜(可樂麗(Kuraray)公司製造,商品名:CT-Z,厚度:25 μm,CTE:18 ppm/K,熱變形溫度:300℃,Dk:3.40,Df:0.0022)設為絕緣基材,準備在其兩面設置有銅箔1的兩面覆金屬積層板1。將兩面覆金屬積層板1的單面的銅箔1蝕刻去除,製備單面覆金屬積層板2。 [Example 5] Let the liquid crystal polymer film (manufactured by Kuraray, trade name: CT-Z, thickness: 25 μm, CTE: 18 ppm/K, heat distortion temperature: 300°C, Dk: 3.40, Df: 0.0022) be As an insulating base material, a double-sided metal laminated board 1 with copper foil 1 provided on both sides of the base material was prepared. The copper foil 1 on one side of the double-sided metal-clad laminate 1 is etched and removed to prepare a single-side metal-clad laminate 2 .

以乾燥後的厚度為50 μm的方式將聚醯亞胺清漆1塗敷於單面覆金屬積層板2的樹脂面上,之後,在80℃下加熱乾燥15分鐘,由此製備帶黏接層的單面覆金屬積層板5。另外,關於帶黏接層的單面覆金屬積層板5,在180℃的烘箱中加熱1分鐘且在150℃下加熱30分鐘後,進行評價,結果,尺寸變化並無問題,介電常數(Dk)及介電損耗正切(Df)分別為2.92、0.0026。The polyimide varnish 1 is applied to the resin surface of the single-sided metal-clad laminate 2 so that the thickness after drying is 50 μm, and then heated and dried at 80°C for 15 minutes to prepare an adhesive layer. Single-sided metal-clad laminate 5. In addition, the single-sided metal-clad laminate 5 with an adhesive layer was evaluated after being heated in an oven at 180°C for 1 minute and at 150°C for 30 minutes. As a result, there was no problem with dimensional changes, and the dielectric constant ( Dk) and dielectric loss tangent (Df) are 2.92 and 0.0026 respectively.

[實施例6] 以乾燥後的厚度為50 μm的方式將黏接層用的樹脂溶液D塗敷於單面覆金屬積層板2的樹脂面上,之後,在80℃下加熱乾燥15分鐘,由此製備帶黏接層的單面覆金屬積層板6。另外,關於帶黏接層的單面覆金屬積層板6,在180℃的烘箱中加熱1分鐘且在150℃下加熱30分鐘後,進行評價,結果,尺寸變化並無問題,介電常數(Dk)及介電損耗正切(Df)分別為3.00、0.0025。 [Example 6] The resin solution D for the adhesive layer is applied to the resin surface of the single-sided metal-clad laminate 2 so that the dried thickness is 50 μm, and then heated and dried at 80° C. for 15 minutes to prepare an adhesive tape. The single-sided metal-clad laminate 6 is connected. In addition, the single-sided metal-clad laminate 6 with an adhesive layer was evaluated after being heated in an oven at 180°C for 1 minute and at 150°C for 30 minutes. As a result, there was no problem with dimensional changes, and the dielectric constant ( Dk) and dielectric loss tangent (Df) are 3.00 and 0.0025 respectively.

[實施例7] 對單面覆金屬積層板1的銅箔1實施利用減成法(subtractive method)的電路加工,製備形成有導體電路層的單面配線基板1。一併對兩塊帶黏接層的單面覆金屬積層板3的銅箔1實施利用減成法的電路加工,製備形成有導體電路層的兩塊帶黏接層的單面配線基板1。 [Example 7] The copper foil 1 of the single-sided metal-clad laminated board 1 is subjected to circuit processing by a subtractive method to prepare a single-sided wiring board 1 on which a conductor circuit layer is formed. The copper foils 1 of the two single-sided metal-clad laminates 3 with an adhesive layer are subjected to circuit processing using the subtractive method to prepare two single-sided wiring boards 1 with an adhesive layer on which conductor circuit layers are formed.

將單面配線基板1的導體電路層與一個帶黏接層的單面配線基板1的黏接層、一個帶黏接層的單面配線基板1的導體電路層與另一個帶黏接層的單面配線基板1的黏接層以分別相向的方式重合後,在160℃、4 MPa的條件下進行60分鐘熱壓接,由此製備多層電路基板1。在多層電路基板1的壓接面中,黏接劑充分填充至導體電路層,也未產生熱壓接步驟引起的導體電路的錯亂。The conductor circuit layer of the single-sided wiring board 1 is connected to the adhesive layer of the single-sided wiring board 1 with an adhesive layer, and the conductor circuit layer of the single-sided wiring board 1 with an adhesive layer is connected to another adhesive layer. After the adhesive layers of the single-sided wiring board 1 are stacked facing each other, they are thermally compressed for 60 minutes under conditions of 160°C and 4 MPa, thereby preparing a multilayer circuit board 1 . In the crimping surface of the multilayer circuit substrate 1, the adhesive is fully filled into the conductor circuit layer, and there is no disorder of the conductor circuit caused by the thermal crimping step.

[實施例8] 準備兩塊帶黏接層的單面配線基板1,並將一個帶黏接層的單面配線基板1的黏接層與另一個帶黏接層的單面配線基板1的黏接層以相向的方式重合後,在160℃、4 MPa的條件下進行60分鐘熱壓接,由此製備兩面電路基板1。在兩面電路基板1的壓接面中,黏接層彼此充分黏接,也未產生熱壓接步驟引起的導體電路的錯亂。 [Example 8] Prepare two single-sided wiring substrates 1 with adhesive layers, and place the adhesive layer of one single-sided wiring substrate 1 with an adhesive layer and the adhesive layer of the other single-sided wiring substrate 1 with an adhesive layer so as to face each other. After overlapping, the two-sided circuit substrate 1 was prepared by thermocompression bonding for 60 minutes under the conditions of 160°C and 4 MPa. In the crimping surfaces of the two-sided circuit substrate 1, the adhesive layers are fully adhered to each other, and there is no disorder of the conductor circuit caused by the thermal crimping step.

[實施例9] 對兩塊帶黏接層的單面覆金屬積層板4的銅箔1實施利用減成法的電路加工,製備形成有導體電路層的兩塊帶黏接層的單面配線基板2。 [Example 9] The copper foil 1 of the two single-sided metal-clad laminates 4 with an adhesive layer is subjected to circuit processing using a subtractive method to prepare two single-sided wiring boards 2 with an adhesive layer on which conductor circuit layers are formed.

將單面配線基板1的導體電路層與一個帶黏接層的單面配線基板2的黏接層、一個帶黏接層的單面配線基板2的導體電路層與另一個帶黏接層的單面配線基板2的黏接層以分別相向的方式重合後,在160℃、4 MPa的條件下進行60分鐘熱壓接,由此製備多層電路基板2。在多層電路基板2的壓接面中,黏接劑充分填充至導體電路層,也未產生熱壓接步驟引起的導體電路的錯亂。The conductor circuit layer of the single-sided wiring board 1 and the adhesive layer of the single-sided wiring board 2 with an adhesive layer are connected, and the conductor circuit layer of the single-sided wiring board 2 with an adhesive layer is connected to another adhesive layer. After the adhesive layers of the single-sided wiring board 2 are stacked facing each other, they are thermally compressed for 60 minutes under the conditions of 160°C and 4 MPa, thereby preparing the multilayer circuit board 2 . In the crimping surface of the multilayer circuit substrate 2, the adhesive is fully filled into the conductor circuit layer, and there is no disorder of the conductor circuit caused by the thermal crimping step.

[實施例10] 準備兩塊帶黏接層的單面配線基板2,並將一個帶黏接層的單面配線基板2的黏接層與另一個帶黏接層的單面配線基板2的黏接層以相向的方式重合後,在160℃、4 MPa的條件下進行60分鐘熱壓接,由此製備兩面電路基板2。在兩面電路基板2的壓接面中,黏接層彼此充分黏接,也未產生熱壓接步驟引起的導體電路的錯亂。 [Example 10] Prepare two single-sided wiring substrates 2 with adhesive layers, and place the adhesive layer of one single-sided wiring substrate 2 with an adhesive layer and the adhesive layer of the other single-sided wiring substrate 2 with an adhesive layer so as to face each other. After overlapping, the two-sided circuit substrate 2 was prepared by thermocompression bonding for 60 minutes under the conditions of 160°C and 4 MPa. In the crimping surfaces of the double-sided circuit substrate 2, the adhesive layers are fully adhered to each other, and there is no disorder of the conductor circuit caused by the thermal crimping step.

[實施例11] 對單面覆金屬積層板2的銅箔1實施利用減成法的電路加工,製備形成有導體電路層的單面配線基板2。一併對兩塊帶黏接層的單面覆金屬積層板5的銅箔1實施利用減成法的電路加工,製備形成有導體電路層的兩塊帶黏接層的單面配線基板3。 [Example 11] The copper foil 1 of the single-sided metal-clad laminated board 2 is subjected to circuit processing by a subtractive method to prepare a single-sided wiring board 2 on which a conductive circuit layer is formed. The copper foils 1 of the two single-sided metal-clad laminates 5 with an adhesive layer are subjected to circuit processing using a subtractive method to prepare two single-sided wiring boards 3 with an adhesive layer on which conductor circuit layers are formed.

將單面配線基板2的導體電路層與一個帶黏接層的單面配線基板3的黏接層、一個帶黏接層的單面配線基板3的導體電路層與另一個帶黏接層的單面配線基板3的黏接層以分別相向的方式重合後,在160℃、4 MPa的條件下進行60分鐘熱壓接,由此製備多層電路基板3。在多層電路基板3的壓接面中,黏接劑充分填充至導體電路層,也未產生熱壓接步驟引起的導體電路的錯亂。The conductor circuit layer of the single-sided wiring board 2 and the adhesive layer of the single-sided wiring board 3 with an adhesive layer are connected, and the conductor circuit layer of the single-sided wiring board 3 with an adhesive layer is connected to another adhesive layer. After the adhesive layers of the single-sided wiring board 3 are stacked facing each other, they are thermally compressed for 60 minutes under the conditions of 160°C and 4 MPa, thereby preparing the multilayer circuit board 3 . In the crimping surface of the multilayer circuit substrate 3, the adhesive is fully filled into the conductor circuit layer, and there is no disorder of the conductor circuit caused by the thermal crimping step.

[實施例12] 準備兩塊帶黏接層的單面配線基板3,並將一個帶黏接層的單面配線基板3的黏接層與另一個帶黏接層的單面配線基板3的黏接層以相向的方式重合後,在160℃、4 MPa的條件下進行60分鐘熱壓接,由此製備兩面電路基板3。在兩面電路基板3的壓接面中,黏接層彼此充分黏接,也未產生熱壓接步驟引起的導體電路的錯亂。 [Example 12] Prepare two single-sided wiring substrates 3 with adhesive layers, and place the adhesive layer of one single-sided wiring substrate 3 with an adhesive layer and the adhesive layer of the other single-sided wiring substrate 3 with an adhesive layer so as to face each other. After overlapping, the two-sided circuit substrate 3 was prepared by thermocompression bonding for 60 minutes under the conditions of 160°C and 4 MPa. In the crimping surfaces of the two-sided circuit substrates 3, the adhesive layers are fully adhered to each other, and there is no disorder of the conductor circuit caused by the thermal crimping step.

[實施例13] 對兩塊帶黏接層的單面覆金屬積層板6的銅箔1實施利用減成法的電路加工,製備形成有導體電路層的兩塊帶黏接層的單面配線基板4。 [Example 13] The copper foil 1 of the two single-sided metal-clad laminates 6 with an adhesive layer is subjected to circuit processing using a subtractive method to prepare two single-sided wiring boards 4 with an adhesive layer on which conductor circuit layers are formed.

將單面配線基板2的導體電路層與一個帶黏接層的單面配線基板4的黏接層、一個帶黏接層的單面配線基板4的導體電路層與另一個帶黏接層的單面配線基板4的黏接層以分別相向的方式重合後,在160℃、4 MPa的條件下進行60分鐘熱壓接,由此製備多層電路基板4。在多層電路基板4的壓接面中,黏接劑充分填充至導體電路層,也未產生熱壓接步驟引起的導體電路的錯亂。The conductor circuit layer of the single-sided wiring board 2 and the adhesive layer of the single-sided wiring board 4 with an adhesive layer are connected, and the conductor circuit layer of the single-sided wiring board 4 with an adhesive layer is connected to another adhesive layer. After the adhesive layers of the single-sided wiring board 4 are stacked facing each other, they are thermally compressed for 60 minutes under conditions of 160°C and 4 MPa, thereby preparing a multilayer circuit board 4 . In the crimping surface of the multilayer circuit substrate 4, the adhesive is fully filled into the conductor circuit layer, and there is no disorder of the conductor circuit caused by the thermal crimping step.

[實施例14] 準備兩塊帶黏接層的單面配線基板4,並將一個帶黏接層的單面配線基板4的黏接層與另一個帶黏接層的單面配線基板4的黏接層以相向的方式重合後,在160℃、4 MPa的條件下進行60分鐘熱壓接,由此製備兩面電路基板4。在兩面電路基板4的壓接面中,黏接層彼此充分黏接,也未產生熱壓接步驟引起的導體電路的錯亂。 [Example 14] Prepare two single-sided wiring substrates 4 with adhesive layers, and place the adhesive layer of one single-sided wiring substrate 4 with an adhesive layer and the adhesive layer of the other single-sided wiring substrate 4 with an adhesive layer so as to face each other. After overlapping, the two-sided circuit substrate 4 was prepared by thermocompression bonding for 60 minutes under the conditions of 160°C and 4 MPa. In the crimping surfaces of the double-sided circuit substrate 4, the adhesive layers are fully adhered to each other, and there is no disorder of the conductor circuit caused by the thermal crimping step.

以上,以例示的目的對本發明的實施形態進行了詳細說明,但本發明不受所述實施形態的制約,可進行各種變形。The embodiments of the present invention have been described in detail for the purpose of illustration. However, the present invention is not limited to the embodiments and can be modified in various ways.

10:絕緣樹脂層 20:金屬層 30:黏接層 40:單面覆金屬積層板 50:導體電路層 100:覆金屬積層板 101:電路基板 102:電路基板單元 110:任意的電路基板 200、201:多層電路基板 T1:合計厚度 T2、T3:厚度 10: Insulating resin layer 20:Metal layer 30: Adhesive layer 40:Single-sided metal clad laminate 50: Conductor circuit layer 100:Metal clad laminate 101:Circuit substrate 102:Circuit base unit 110: Any circuit board 200, 201: Multilayer circuit substrate T1:Total thickness T2, T3: thickness

圖1是表示本發明的一實施形態的覆金屬積層板的結構的剖面圖。 圖2是表示本發明的一實施形態的電路基板的結構的剖面圖。 圖3是表示本發明的第一實施形態的多層電路基板的結構的剖面圖。 圖4是表示本發明的第一實施形態的多層電路基板的製造步驟的說明圖。 圖5是表示本發明的第二實施形態的多層電路基板的結構的剖面圖。 圖6是表示本發明的第二實施形態的多層電路基板的製造步驟的說明圖。 FIG. 1 is a cross-sectional view showing the structure of a metal-clad laminated board according to an embodiment of the present invention. 2 is a cross-sectional view showing the structure of a circuit board according to an embodiment of the present invention. 3 is a cross-sectional view showing the structure of the multilayer circuit board according to the first embodiment of the present invention. 4 is an explanatory diagram showing the manufacturing steps of the multilayer circuit board according to the first embodiment of the present invention. 5 is a cross-sectional view showing the structure of a multilayer circuit board according to a second embodiment of the present invention. 6 is an explanatory diagram showing the manufacturing steps of the multilayer circuit board according to the second embodiment of the present invention.

10:絕緣樹脂層 10: Insulating resin layer

20:金屬層 20:Metal layer

30:黏接層 30: Adhesive layer

50:導體電路層 50: Conductor circuit layer

100:覆金屬積層板 100:Metal clad laminate

101:電路基板 101:Circuit substrate

102:電路基板單元 102:Circuit base unit

201:多層電路基板 201:Multilayer circuit substrate

Claims (4)

一種多層電路基板的製造方法,包括: 準備多個電路基板的步驟,所述電路基板包括絕緣樹脂層、形成於所述絕緣樹脂層的其中一面的導體電路層、以及積層於所述絕緣樹脂層的其中另一面的黏接層;以及 將一個所述電路基板的所述黏接層、與另一個所述電路基板的所述黏接層以相向的方式重疊壓接的步驟。 A method for manufacturing a multilayer circuit substrate, including: The step of preparing a plurality of circuit substrates, the circuit substrates including an insulating resin layer, a conductor circuit layer formed on one side of the insulating resin layer, and an adhesive layer laminated on the other side of the insulating resin layer; and The step of overlapping and pressing the adhesive layer of one of the circuit substrates and the adhesive layer of the other circuit substrate in a facing manner. 如請求項1所述的多層電路基板的製造方法,其中構成所述黏接層的樹脂為含有四羧酸殘基及二胺殘基的黏接性聚醯亞胺,並且 所述黏接性聚醯亞胺相對於所述二胺殘基的總量100莫耳份而含有50莫耳份以上的由二聚酸型二胺衍生的二胺殘基,所述二聚酸型二胺是二聚酸的兩個末端羧酸基經取代為一級氨基甲基或氨基而成。 The manufacturing method of a multilayer circuit substrate as claimed in claim 1, wherein the resin constituting the adhesive layer is an adhesive polyimide containing tetracarboxylic acid residues and diamine residues, and The adhesive polyimide contains 50 mole parts or more of a diamine residue derived from a dimer acid-type diamine relative to 100 mole parts of the total amount of the diamine residues, and the dimer Acid-type diamine is formed by substituting the two terminal carboxylic acid groups of dimer acid with primary aminomethyl or amino groups. 如請求項2所述的多層電路基板的製造方法,其中所述黏接性聚醯亞胺相對於所述四羧酸殘基的總量100莫耳份而含有合計為90莫耳份以上的由下述通式(1)和/或通式(2)所表示的四羧酸酐衍生的四羧酸殘基: 通式(1)中,X表示單鍵、或選自下式中的二價基,通式(2)中,Y所表示的環狀部分表示形成選自4員環、5員環、6員環、7員環或8員環中的環狀飽和烴基, 所述式中,Z表示-C 6H 4-、-(CH 2)n-或-CH 2-CH(-O-C(=O)-CH 3)-CH 2-,n表示1~20的整數。 The manufacturing method of a multilayer circuit board according to claim 2, wherein the adhesive polyimide contains a total of 90 mole parts or more relative to 100 mole parts of the total amount of the tetracarboxylic acid residues. Tetracarboxylic acid residue derived from tetracarboxylic anhydride represented by the following general formula (1) and/or general formula (2): In the general formula (1), A cyclic saturated hydrocarbon group in a membered ring, a 7-membered ring or an 8-membered ring, In the formula, Z represents -C 6 H 4 -, -(CH 2 )n- or -CH 2 -CH(-OC(=O)-CH 3 )-CH 2 -, and n represents an integer from 1 to 20 . 如請求項2所述的多層電路基板的製造方法,其中所述黏接性聚醯亞胺相對於所述二胺殘基的總量100莫耳份而在50莫耳份以上且99莫耳份以下的範圍內含有由所述二聚酸型二胺衍生的二胺殘基,且 在1莫耳份以上且50莫耳份以下的範圍內含有由選自下述通式(B1)~通式(B7)所表示的二胺化合物中的至少一種二胺化合物衍生的二胺殘基: 式(B1)~式(B7)中,R 1獨立地表示碳數1~6的一價烴基或烷氧基,連結基A獨立地表示選自-O-、-S-、-CO-、-SO-、-SO 2-、-COO-、-CH 2-、-C(CH 3) 2-、-NH-或-CONH-中的二價基,n 1獨立地表示0~4的整數;其中,自式(B3)中去除與式(B2)重複的部分,自式(B5)中去除與式(B4)重複的部分。 The manufacturing method of a multilayer circuit substrate according to claim 2, wherein the adhesive polyimide is between 50 and 99 mole parts relative to 100 mole parts of the total amount of the diamine residues. The diamine residue derived from the dimer acid type diamine is contained within the range of 1 molar part or less and 50 molar parts or less and is selected from the following general formula (B1) to A diamine residue derived from at least one diamine compound among the diamine compounds represented by general formula (B7): In the formulas (B1) to (B7), R 1 independently represents a monovalent hydrocarbon group or an alkoxy group having 1 to 6 carbon atoms, and the linking group A independently represents a group selected from -O-, -S-, -CO-, The divalent group in -SO-, -SO 2 -, -COO-, -CH 2 -, -C(CH 3 ) 2 -, -NH- or -CONH-, n 1 independently represents an integer from 0 to 4 ; Among them, the part that is repeated with the formula (B2) is removed from the formula (B3), and the part that is repeated with the formula (B4) is removed from the formula (B5).
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CN111132456A (en) 2020-05-08

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