TW202336397A - Depressurization drying device, depressurization drying method, and method for shortening time required for depressurization drying process - Google Patents
Depressurization drying device, depressurization drying method, and method for shortening time required for depressurization drying process Download PDFInfo
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B5/00—Drying solid materials or objects by processes not involving the application of heat
- F26B5/04—Drying solid materials or objects by processes not involving the application of heat by evaporation or sublimation of moisture under reduced pressure, e.g. in a vacuum
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
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Abstract
Description
本揭示有關減壓乾燥裝置、減壓乾燥處理方法、減壓乾燥處理的所需時間之縮短方法。This disclosure relates to a reduced pressure drying device, a reduced pressure drying treatment method, and a method for shortening the time required for the reduced pressure drying treatment.
於專利文獻1,揭露將塗布於基板的有機材料進行減壓乾燥的減壓乾燥裝置。
於專利文獻2,揭露具備一溶劑捕集部的減壓乾燥裝置,該溶劑捕集部設為與載置於載台的基板相向,暫時性捕集從基板氣化的溶液中的溶劑。
[先前技術文獻]
[專利文獻]
[專利文獻1]日本特開2017-73338號公報 [專利文獻2]日本特開2020-190405號公報 [Patent Document 1] Japanese Patent Application Publication No. 2017-73338 [Patent Document 2] Japanese Patent Application Publication No. 2020-190405
[發明所欲解決之問題][Problem to be solved by the invention]
本揭示之技術,縮短減壓乾燥處理中的後處理程序的所需時間,縮短減壓乾燥處理整體的所需時間。 [解決問題之技術手段] The technology disclosed in the present disclosure shortens the time required for the post-processing procedure in the vacuum drying process and shortens the overall time required for the vacuum drying process. [Technical means to solve problems]
本揭示的一態樣,為一種減壓乾燥裝置,將基板上的溶液在減壓狀態下予以乾燥,具備:處理容器,其被可減壓地構成,收容前述基板;載台,其設於前述處理容器內,被載置前述基板;溶劑捕集部,其捕集隨減壓乾燥處理從前述基板氣化並放出至前述處理容器內的前述溶液中的溶劑;以及冷卻部,其將在解除前述處理容器內的減壓狀態之際升溫了的前述溶劑捕集部進行冷卻。 [發明功效] One aspect of the present disclosure is a reduced pressure drying device that dries a solution on a substrate under reduced pressure, and includes: a processing container configured to be decompressible and accommodating the substrate; and a stage provided on In the processing container, the substrate is placed; a solvent collection part that collects the solvent that is vaporized from the substrate during the reduced pressure drying process and is released into the solution in the processing container; and a cooling part that will be used in the processing container. The solvent collecting part whose temperature has been raised when the depressurized state in the processing container is released is cooled. [Invention effect]
依本發明時,可縮短減壓乾燥處理中的後處理程序的所需時間,縮短減壓乾燥處理整體的所需時間。According to the present invention, the time required for the post-processing procedure in the vacuum drying process can be shortened, and the time required for the entire vacuum drying process can be shortened.
歷來,已知有機發光二極體(OLED:Organic Light Emitting Diode),其為利用了有機EL(Electroluminescence)的發光的發光二極體。使用了該有機發光二極體的有機EL顯示器,由於為薄型輕量且低消耗電力,具有在響應速度、視角、對比度方面優異如此的優點,故近年作為次世代的平板顯示器(FPD)受到注目。Conventionally, an organic light emitting diode (OLED: Organic Light Emitting Diode) is known, which is a light emitting diode that utilizes the light emission of organic EL (Electroluminescence). Organic EL displays using these organic light-emitting diodes have attracted attention as a next-generation flat panel display (FPD) in recent years because they are thin, lightweight, consume low power, and have excellent response speed, viewing angle, and contrast. .
有機發光二極體具有在基板上的陽極與陰極之間夾著有機EL層的構造。有機EL層,例如從陽極側依序被積層電洞注入層、電洞傳輸層、發光層、電子傳輸層及電子注入層而形成。在形成此等有機EL層的各層(尤其電洞注入層、電洞傳輸層及發光層)時,例如使用如下的方法:以噴墨式將有機材料的液滴對被離散地配置於基板上的與各色的像素對應的隔牆吐出,從而在隔牆內塗布該像素的有機材料的膜。The organic light-emitting diode has a structure in which an organic EL layer is sandwiched between an anode and a cathode on a substrate. The organic EL layer is formed, for example, by laminating a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer in order from the anode side. When forming each layer of these organic EL layers (especially the hole injection layer, the hole transport layer and the light-emitting layer), for example, the following method is used: pairs of droplets of organic material are discretely arranged on the substrate using an inkjet method. The partition wall corresponding to the pixel of each color is spit out, and the film of the organic material of the pixel is coated in the partition wall.
於以噴墨式吐出至基板上的有機材料中,包含多量的溶劑。為此,以除去溶劑為目的,進行將基板上的溶液在減壓狀態下予以乾燥的減壓乾燥處理。此減壓乾燥處理,使用具有被可減壓地構成的處理容器、設於處理容器內的基板的載台等的減壓乾燥裝置而被進行(專利文獻1、2參照)。The organic material discharged onto the substrate by the inkjet method contains a large amount of solvent. Therefore, in order to remove the solvent, a reduced pressure drying process is performed to dry the solution on the substrate under reduced pressure. This reduced-pressure drying process is performed using a reduced-pressure drying device including a processing container configured to be depressurized and a stage for a substrate provided in the processing container (see
此外,在揭露於專利文獻2的減壓乾燥裝置,將暫時性捕集從載置於載台的基板氣化的溶劑的溶劑捕集部設於處理容器內,從而使除去基板上的溶劑的溶劑除去程序,亦即使將基板上的溶液予以乾燥的基板乾燥程序的所需時間縮短,使減壓乾燥處理的所需時間縮短。In addition, in the reduced pressure drying device disclosed in Patent Document 2, a solvent collection unit that temporarily collects the solvent vaporized from the substrate placed on the stage is provided in the processing container, so that the solvent on the substrate is removed. The solvent removal process, that is, the time required for the substrate drying process of drying the solution on the substrate is shortened, and the time required for the vacuum drying process is shortened.
然而,現今需要縮短減壓乾燥處理整體的所需時間。設置上述的溶劑捕集部等所致的基板乾燥程序的所需時間的縮短化,雖關乎減壓乾燥處理整體的所需時間的縮短,惟於減壓乾燥處理,在上述基板乾燥程序後,具有各種的程序(以下,後處理程序),此後處理程序亦對減壓乾燥處理的所需時間具有影響。另外,在後處理程序,例如進行在基板乾燥程序時吸附於減壓乾燥裝置的構件(例如處理容器)的溶劑的脫離等。However, nowadays, it is necessary to shorten the time required for the entire vacuum drying process. Although the shortening of the time required for the substrate drying process due to the installation of the above-mentioned solvent collection part, etc. is related to the shortening of the overall time required for the reduced pressure drying process, in the reduced pressure drying process, after the above-mentioned substrate drying process, There are various procedures (hereinafter, post-treatment procedures), and the post-treatment procedures also have an impact on the time required for the reduced pressure drying process. In addition, in the post-processing process, for example, the solvent adsorbed to the components of the reduced pressure drying device (for example, the processing container) during the substrate drying process is desorbed.
本揭示之技術,為縮短減壓乾燥處理中的後處理程序的所需時間並縮短減壓乾燥處理整體的所需時間者。The technology disclosed in the present disclosure shortens the time required for the post-processing process in the vacuum drying process and shortens the time required for the entire vacuum drying process.
以下,針對本揭示之減壓乾燥裝置、減壓乾燥方法及減壓乾燥處理的所需時間的縮短方法,參照圖式進行說明。另外,於本說明書及圖式,實質上具有相同的功能構成的要素方面,標注相同的符號從而省略重複說明。Hereinafter, the reduced pressure drying device, the reduced pressure drying method, and the method of shortening the time required for the reduced pressure drying process of the present disclosure will be described with reference to the drawings. In addition, in this specification and the drawings, elements having substantially the same functional configuration are denoted by the same reference numerals, and repeated descriptions will be omitted.
[第1方式] <減壓乾燥裝置> 圖1~圖3為針對第1方式之減壓乾燥裝置的示意構成進行繪示的圖,圖1為示意性示出減壓乾燥裝置內的橫截面圖、圖2及圖3分別為圖1的A-A線截面圖及B-B線截面圖。圖4為後述的溶劑捕集部的局部放大平面圖。 [1st way] <Pressure reduction drying device> Figures 1 to 3 are diagrams illustrating the schematic structure of the vacuum drying device of the first mode. Figure 1 is a schematic cross-sectional view of the vacuum drying device. Figures 2 and 3 are respectively Figure 1 A-A line cross-sectional view and B-B line cross-sectional view. Fig. 4 is a partially enlarged plan view of a solvent collection unit described later.
減壓乾燥裝置1為將在基板G上被以例如噴墨式而塗布的溶液在減壓狀態下進行乾燥者。此外,減壓乾燥裝置1的作為處理對象的基板G,為例如有機EL顯示器用的玻璃基板,其平面尺寸為2.2m×2.7m。The reduced
塗布於作為處理對象的基板G的溶液,由溶質與溶劑所成,作為減壓乾燥處理的對象之成分主要為溶劑。含於溶劑的有機化合物方面,高沸點者多,可舉例如1,3-二甲基-2-咪唑啉酮(1,3-dimethyl-2-imidazolidinone、沸點220℃、熔點8℃)、4-第三丁基苯甲醚(4-tert-Butylanisole、沸點222℃、熔點18℃)、反式茴香腦(Trans-Anethole、沸點235℃、熔點20℃)、1,2-二甲氧基苯(1,2-Dimethoxybenzene、沸點206.7℃、熔點22.5℃)、2-甲氧基聯苯(2-Methoxybiphenyl、沸點274℃、熔點28℃)、二苯醚(Phenyl Ether、沸點258.3℃、熔點28℃)、2-萘乙醚(2-Ethoxynaphthalene、沸點282℃、熔點35℃)、苄基苯基醚(Benzyl Phenyl Ether、沸點288℃、熔點39℃)、2,6-二甲氧基甲苯(2,6-Dimethoxytoluene、沸點222℃、熔點39℃)、2-丙氧基萘(2-Propoxynaphthalene、沸點305℃、熔點40℃)、1,2,3-三甲氧基苯(1,2,3-Trimethoxybenzene、沸點235℃、熔點45℃)、環己基苯(cyclohexylbenzene、沸點237.5℃、熔點5℃)、十二烷基苯(dodecylbenzene、沸點288℃、熔點-7℃)、1,2,3,4-四甲苯(1,2,3,4-tetramethylbenzene、沸點203℃、熔點76℃)等。此等高沸點有機化合物有時被組合2種以上而混合於溶液中。The solution applied to the substrate G to be processed is composed of a solute and a solvent, and the component to be subjected to the reduced pressure drying process is mainly the solvent. Among the organic compounds contained in the solvent, many have high boiling points. Examples include 1,3-dimethyl-2-imidazolidinone (
減壓乾燥裝置1如示於圖1~圖3,具備作為處理容器的腔室10。As shown in FIGS. 1 to 3 , the reduced
腔室10為被可減壓地構成的容器,由例如不鏽鋼等的金屬材料形成。於腔室10,收容基板G。於腔室10的內部,設有被載置基板G的載台20、後述的溶劑捕集部50。此外,腔室10具有側壁11、頂板12、底板13。The
側壁11從後述的溶劑捕集部50的厚度方向(圖1的Z方向)所見時,設為圍繞載台20。側壁11形成例如棱柱形,在上下形成開口。
於側壁11,如示於圖3般在X方向負側,設有將基板G相對於腔室10進行搬出入用的搬出入口11a。搬出入口11a呈可透過閘閥14進行開閉。閘閥14被透過後述的控制部U進行控制。
The
頂板12被以閉塞透過側壁11形成的上側的開口的方式,安裝於側壁11之上側。The
底板13被以閉塞透過側壁11形成的下側的開口的方式,安裝於側壁11之下側。於底板13之上表面中央,配設載台20。對於載台20,設有在載台20與外部的搬送裝置之間傳遞基板G用的挺桿(未圖示)。此挺桿被構成為可透過升降機構(未圖示)升降自如。上述升降機構被透過後述的控制部U進行控制。The
此外,於底板13,如示於圖1,沿著載台20的外周,設有複數個排氣口13a、13b。在本例,排氣口13a被沿著載台20的Y方向負側的長邊設置2個,被沿著載台20的Y方向正側的長邊設置2個。此外,在本例,排氣口13b被沿著載台20的X方向負側的短邊設置3個,被沿著載台20的X方向正側的短邊設置3個。In addition, as shown in FIG. 1 , the
於排氣口13a,如示於圖2,經由排氣管32連接著將腔室10內減壓用的排氣機構31。排氣機構31具有將腔室10內排氣的乾式泵浦31a、切換透過了乾式泵浦31a之排氣的開始/停止的切換閥(未圖示)等。排氣口13a、排氣機構31(具體而言排氣機構31中的連接排氣管32與乾式泵浦31a的部分)及排氣管32構成排氣線路30。排氣線路30為連接於乾式泵浦31a並將腔室10內排氣者。As shown in FIG. 2 , an
於排氣線路30設有保護網33。保護網33防止物體經由排氣線路30侵入於乾式泵浦31a,為保護乾式泵浦31a的構件,被形成為網狀。保護網33的材料方面使用例如不鏽鋼。在本例,保護網33設為覆蓋排氣口13a的腔室10側端。A
於排氣口13b,如示於圖3,經由排氣管42連接著排氣機構41。排氣機構41為將被透過排氣機構31減壓的腔室10內進一步減壓者,具有將腔室10內進一步排氣的渦輪分子泵浦41a、切換透過了渦輪分子泵浦41a的排氣的開始/停止的切換閥(未圖示)等。排氣口13b、排氣機構41(具體而言排氣機構41中的連接排氣管42與渦輪分子泵浦41a的部分)及排氣管42構成排氣線路40。排氣線路40為連接於渦輪分子泵浦41a並將腔室10內排氣者。As shown in FIG. 3 , an
於排氣線路40設有保護網43。保護網43防止物體經由排氣線路40侵入於渦輪分子泵浦41a,為保護渦輪分子泵浦41a的構件,被形成為網狀。保護網43的材料方面使用例如不鏽鋼。在本例,保護網43設為覆蓋排氣口13b的腔室10側端。A
另外,保護網33、43非捕捉成為基板G之缺陷的原因的顆粒等的小型物者,而為捕捉長度、直徑等為例如1mm以上的相對大的物體(例如螺絲等)者。
此外,後述的溶劑捕集部50,雖亦如同保護網33、43般被形成為網狀,惟保護網33及保護網43的網眼部分的開口及開口率較大,保護網33、43的開口為例如1~5mm見方。
In addition, the
排氣機構31、41被透過後述的控制部U進行控制。此外,為了透過了排氣機構31、41之排氣的調節等,測定腔室10內的壓力的壓力計(未圖示)被設於腔室10。The
再者,於腔室10的內部,設有溶劑捕集部50。
溶劑捕集部50為暫時性捕集從載置於載台20的基板G氣化的溶液中的溶劑者。溶劑捕集部50被在腔室10內的載置於載台20的基板G之上方設為與該基板G相向。具體而言,溶劑捕集部50在腔室10內被設為與載置於載台20的基板G正對,亦即被設為與載置於載台20的基板G成為大致平行。
Furthermore, a
溶劑捕集部50為網狀的構件,更具體而言為網板狀的構件,如示於圖4,具有複數個貫通於該溶劑捕集部50的厚度方向(圖4的Z方向)的貫通孔50a。貫通孔50a在俯視(圖3的Z方向視)下,跨溶劑捕集部50的整面,被形成為格子狀。The
溶劑捕集部50的材料方面,使用熱導性佳的材料如不鏽鋼等的金屬材料。此外,溶劑捕集部50被形成為薄型,被形成為例如其厚度成為0.05mm~0.2mm。俯視下,溶劑捕集部50的尺寸,為與載台20的尺寸大致相同。溶劑捕集部50,其開口率大至60%~90%,如上述般厚度為0.05~0.2mm為薄,故熱容量小。因此,腔室10內被減壓且腔室10內的氣體因隔熱膨脹被冷卻時,由於該被冷卻的氣體,使得溶劑捕集部50被冷卻。另外,溶劑捕集部50的開口率,被以(俯視下的溶劑捕集部50的貫通孔50a的總面積)/(俯視下的溶劑捕集部50的全面積)定出。As for the material of the
再者,溶劑捕集部50被施有提升該溶劑捕集部50的輻射率用的加工處理(以下,有時稱為輻射率提升處理)。
輻射率提升處理為例如將溶劑捕集部50黑色化的處理。更具體而言,例如溶劑捕集部50由不鏽鋼形成的情況下,為將不鏽鋼氧化的處理。
此外,輻射率提升處理為對於由金屬材料形成的溶劑捕集部50的表面進行的粗糙化處理。實施粗糙化處理,使得在由金屬材料形成的溶劑捕集部50的表面形成無數個微細的凹凸,故可提高溶劑捕集部50的輻射率。粗糙化處理被使用例如砂紙而進行。
In addition, the
溶劑捕集部50例如被以下述方法製作:在由不鏽鋼等所成的板材,以透過了雷射加工、電漿蝕刻等之開孔加工,形成多數個貫通孔50a,之後實施輻射率提升處理。另外,亦可使複數個網板狀的構件結合而作成為1個溶劑捕集部50。The
溶劑捕集部50如示於圖2及圖3,被經由複數個支撐構件60支撐於底板13。
各支撐構件60為延伸於鉛直方向的構件,於頂端支撐溶劑捕集部50。各支撐構件60的基端,連接於使該支撐構件60升降用的升降機構(未圖示)。升降機構具有產生支撐構件60的升降用的驅動力的馬達等的驅動源(未圖示)。使支撐構件60升降,從而可在將溶劑捕集部50在圖2及圖3中以實線示出的第1高度位置與比第1高度位置高的在圖2及圖3中以點線示出的第2高度位置之間,使溶劑捕集部50升降。上述第1高度位置(以下,省略為「第1位置」)為從基板G上除去溶劑時的位置,上述第2位置(以下,省略為「第2位置」)為在載台20與外部的搬送裝置之間傳遞基板G時的位置。
另外,針對支撐構件60之升降機構,被透過後述的控制部U進行控制。
As shown in FIGS. 2 and 3 , the
此外,減壓乾燥裝置1具有控制部U。此控制部為例如具備CPU、記憶體等的電腦,具有程式儲存部(未圖示)。於程式儲存部,儲存對減壓乾燥裝置1中的減壓乾燥處理進行控制的程式。另外,上述程式亦可為記錄於電腦可讀取之非暫時的記憶媒體H並從該記憶媒體H安裝於上述控制部者。程式的一部分或全部亦能以專用硬體(電路基板)實現。In addition, the reduced
<減壓乾燥處理>
接著,針對使用了減壓乾燥裝置1的減壓乾燥處理,利用圖5及圖6進行說明。圖5為說明使用了減壓乾燥裝置1的減壓乾燥處理的一例用的流程圖。圖6為針對在未對減壓乾燥裝置1的溶劑捕集部50實施輻射率提升處理的情況下的腔室10內的壓力之時間變化進行繪示的圖。圖6中,橫軸為時間,縱軸為腔室10內的壓力。壓力方面以對數尺度示出。另外,以下的減壓乾燥處理被在控制部U的控制下進行。此外,在以下之例,當作在減壓乾燥處理的開始時,基板G已被搬入於腔室10內並載置於載台20。
<Reduced pressure drying>
Next, the reduced pressure drying process using the reduced
(S1:基板乾燥程序)
首先,載置於載台20的基板G上的溶液被乾燥,亦即上述基板G上的溶液中的溶劑被除去。
(S1: Substrate drying procedure)
First, the solution placed on the substrate G on the
具體而言,如示於圖6,腔室10內被減壓,載置於載台20的基板G上的溶劑被在減壓狀態下除去下去。與此同時,透過腔室10內的減壓,使得腔室10內的氣體發生隔熱膨脹而被冷卻,由於該氣體使得溶劑捕集部50被冷卻,透過該溶劑捕集部50,使得從載置於載台20的基板G氣化的溶劑被暫時性捕集。以下,針對此程序更具體地進行說明。另外,於此程序,溶劑捕集部50的位置為前述的第1位置。Specifically, as shown in FIG. 6 , the pressure inside the
首先,乾式泵浦31a被作動,腔室10內被減壓排氣。透過了乾式泵浦之減壓排氣,被進行直到腔室10內的壓力成為例如10Pa。
此減壓排氣之際,由於隔熱膨脹,使得腔室10內的氣體被冷卻。如此般即使腔室10內的氣體被冷卻,基板G的溫度,由於該基板G的熱容量大等,不受此被冷卻的氣體的影響,從室溫的23℃幾乎不變化。然而,熱容量小的溶劑捕集部50,由於隨減壓因隔熱膨脹被冷卻的氣體,因而被冷卻。
First, the
之後,渦輪分子泵浦41a被作動,腔室10內進一步被減壓排氣。隨此減壓排氣,溶劑捕集部50由於因前述的隔熱膨脹被冷卻的氣體使得被進一步冷卻,成為在該時點的腔室10內的壓力之露點以下(例如8~15℃)。After that, the
此外,因減壓排氣使得腔室10的內部壓力低於基板G上的溶劑的蒸氣壓時,基板G上的溶劑的氣化被促進。
氣化的溶劑,被捕集並吸附於作成為如上述般而被冷卻的溶劑捕集部50。透過如此般捕集,使得腔室10內的氣體狀的溶劑的濃度被維持為低。因此,可迅速除去基板G上的溶劑。
In addition, when the internal pressure of the
另外,在此程序氣化的基板G上的溶劑,非僅吸附於溶劑捕集部50,而亦吸附於腔室10(具體而言腔室10的內壁面、保護網33、43)。In addition, the solvent on the substrate G vaporized in this process is adsorbed not only on the
(S2:溶劑捕集部50及腔室10的乾燥程序(乾枯程序))
基板G上的溶劑的除去完畢後,溶劑捕集部50被升溫,該溶劑捕集部50被乾燥,同時腔室10被乾燥。亦即,基板G上的溶劑的除去完畢後,溶劑捕集部50被升溫,吸附於該溶劑捕集部50的溶劑從該溶劑捕集部50脫離,同時吸附於腔室10的溶劑從該腔室10脫離。
(S2: Drying process (drying process) of the
此程序例如透過下述而進行:一面使溶劑捕集部50移動至接近頂板12的第2位置,一面持續進行透過了乾式泵浦31a之排氣及透過了渦輪分子泵浦41a之排氣。持續此等排氣,使得例如如示於圖6,首先在溶劑捕集部50的乾燥完畢時T1腔室10內的壓力降低,在腔室10的乾燥完畢時T2腔室10內的壓力降低。因此,例如腔室10內的壓力成為預先設定的腔室10的乾燥完畢時的壓力時,此步驟S2的乾枯程序結束。This process is performed, for example, by continuing to exhaust gas through the
於此步驟S2的乾枯程序,不同於上述之例,即使在溶劑捕集部50未被實施輻射率提升處理的情況下,溶劑捕集部50仍會接收來自頂板12的輻射熱、來自基板G的輻射熱等而逐漸升溫。其中,對溶劑捕集部50實施輻射率提升處理,使得透過了來自頂板12的輻射熱等的溶劑捕集部50的升溫率提高。因此,可縮短從溶劑捕集部50除去溶劑的所需的時間,可縮短步驟S2的乾枯程序的所需時間。The drying process in step S2 is different from the above example. Even if the
(步驟S3:待機程序)
在直到開始下個步驟S4的淨化程序為止之期間,減壓乾燥裝置1被設為待機狀態。此程序之期間,透過了乾式泵浦31a之排氣及透過了渦輪分子泵浦41a之排氣仍被持續。此外,在此程序,溶劑捕集部50的溫度亦逐漸升溫。
另外,此程序亦可省略。
(Step S3: Standby procedure)
Until the purification process of the next step S4 is started, the reduced
(步驟S4:大氣開放程序)
待機程序結束時,腔室10內的減壓狀態被解除,具體而言腔室10內被返回大氣壓。
(Step S4: Atmospheric opening procedure)
When the standby program ends, the depressurized state in the
更具體而言,例如透過了乾式泵浦31a之排氣及透過了渦輪分子泵浦41a之排氣被停止,同時、腔室10內被導入大氣氣體,亦即腔室10內被淨化,如示於圖6般腔室10內被返回大氣壓。腔室10內返回大氣壓的過程中,由於絕熱壓縮使得腔室10內的氣體被加熱,由於此被加熱的氣體,使得溶劑捕集部50升溫,成為比減壓乾燥處理開始時(具體而言開始腔室10內的減壓時)高溫。More specifically, for example, the exhaust gas passing through the
(步驟S5:溶劑捕集部50的冷卻)
之後,使溶劑捕集部50冷卻直到減壓乾燥處理開始時的溫度為止。具體而言,例如使溶劑捕集部50自然冷卻。
(Step S5: Cooling of the solvent collection part 50)
Thereafter, the
(步驟S6:基板G的搬出入)
溶劑捕集部50的冷卻後,基板G被從腔室10搬出,同時下個基板G被搬入。
具體而言,溶劑捕集部50位於前述的第2位置的狀態下,搬出入口11a被設為開狀態,透過被對於載台20而設的挺桿(未圖示),從載台20至外部的搬送裝置,被乾燥的基板G被傳遞。接著,透過上述搬送裝置,基板G被從腔室10搬出。之後,透過上述搬送裝置使下個基板G被搬入至腔室10內。接著,透過挺桿,下個基板G被從上述搬送裝置傳遞至載台20,載置於載台20上。並且,溶劑捕集部50被下降至前述的第1位置,同時搬出入口11a被設為閉狀態。
(Step S6: Unloading and unloading the substrate G)
After the
據此,對於1個基板G之使用了減壓乾燥裝置1的減壓乾燥處理完畢,接著對下個基板G,如同上述般進行減壓乾燥處理。Accordingly, the reduced pressure drying process using the reduced
另外,步驟S5的溶劑捕集部50的冷卻與步驟S6的基板G的搬出入亦可並行地進行。In addition, the cooling of the
此外,於步驟S5將溶劑捕集部50冷卻之理由如以下。對於下個基板G之減壓乾燥處理開始時(具體而言開始腔室10內的減壓時)的溶劑捕集部50的溫度高時,在對於下個基板G之步驟S1的基板乾燥程序,無法充分降低溶劑捕集部50的溫度,無法迅速使基板G上的溶液乾燥之故。In addition, the reason why the
如以上,在第1方式,溶劑捕集部50被實施輻射率提升處理。
為此,於步驟S1的基板乾燥程序後的步驟S2的乾枯程序,可提前使溶劑捕集部50的溫度升溫,可使在步驟S1的基板乾燥程序吸附於溶劑捕集部50的溶劑,迅速從該溶劑捕集部50脫離。因此,可縮短步驟S2的乾枯程序的所需時間。據此,可縮短在減壓乾燥處理程序中的包含步驟S2的乾枯程序的比步驟S1的基板乾燥程序之後的程序(亦即後處理程序)的所需時間,可縮短減壓乾燥處理整體的所需時間。
換言之,在第1方式,使溶劑捕集部50的輻射率提升,從而使至開始對於下個基板G之減壓乾燥處理為止的時間,亦即使後處理程序之時間縮短。
As described above, in the first mode, the
另外,製作溶劑捕集部50時,使輻射率提升用的加工處理,可對溶劑捕集部50整體均勻地進行,亦可在將溶劑捕集部50在俯視下區劃為複數個區域時,加工程度因區域彼此不同。
例如,於溶劑捕集部50,最被透過腔室10內的隔熱膨脹了的氣體進行冷卻的區域,在俯視下為中央的區域,故可針對該中央的區域的透過了輻射率提升處理之加工程度,作成為比其他區域大。
In addition, when manufacturing the
[第1方式的變形例]
圖7為針對第1方式的變形例之減壓乾燥裝置的示意構成進行繪示的橫截面圖。
溶劑捕集部50的材料方面,基本上採用不鏽鋼等導電性材料。如此般,溶劑捕集部50由導電性材料形成的情況下,如示於圖7,亦可設置使溶劑捕集部50通電並加熱該溶劑捕集部50的通電部70。
通電部70例如具有對溶劑捕集部50供應電力的電源71及將電源71與溶劑捕集部50連接的佈線72。
[Modification of the first method]
7 is a cross-sectional view illustrating the schematic structure of a reduced pressure drying device according to a modification of the first aspect.
As for the material of the
如此般設置通電部70,在步驟S2的乾枯程序中使溶劑捕集部50通電,使得可進一步提高在該乾枯程序之溶劑捕集部50的升溫率,予以促進從溶劑捕集部50的溶劑的脫離。因此,可進一步縮短步驟S2的乾枯程序的所需時間。By arranging the energizing
圖8為針對第1方式的其他變形例之減壓乾燥裝置的示意構成進行繪示的縱截面圖。
如示於圖8,亦可在腔室10內設置作為熱媒流路的熱媒管80。熱媒管80設於溶劑捕集部50與頂板12之間,更具體而言設於成為第2位置的溶劑捕集部50與頂板12之間。此外,熱媒管80在俯視下,設為覆蓋溶劑捕集部50的大致整體。並且,於熱媒管80,流通有從設於腔室10的外部的冷卻器單元(未圖示)供應的高溫的熱媒。
8 is a longitudinal cross-sectional view illustrating the schematic structure of a reduced pressure drying device according to another modification of the first aspect.
As shown in FIG. 8 , a
設置如此的熱媒管80,於步驟S2的乾枯程序使高溫的熱媒流於熱媒管80,使得可進一步提高在該乾枯程序中的溶劑捕集部50的升溫率,予以促進從溶劑捕集部50的溶劑的脫離。因此,可進一步縮短步驟S2的乾枯程序的所需時間。By arranging such a
圖9為針對第1方式的其他變形例之減壓乾燥裝置的示意構成進行繪示的縱截面圖。
如示於圖9,亦可設置對溶劑捕集部50照射紅外線而加熱該溶劑捕集部50的作為紅外線照射部的紅外線光源90。紅外線光源90為例如鹵素燈。紅外線光源90例如設於溶劑捕集部50之側方,紅外線光源90的光軸設為水平。此外,紅外線光源90設於例如X方向正側與X方向負側雙方。另外,紅外線光源90亦可被朝X方向正側與X方向負側雙方,沿著Y方向設置複數個。
9 is a longitudinal cross-sectional view illustrating the schematic structure of a reduced pressure drying device according to another modification of the first aspect.
As shown in FIG. 9 , an infrared
設置如此的紅外線光源90,在步驟S2的乾枯程序中從紅外線光源90對溶劑捕集部50照射紅外線,使得可進一步提高在該乾枯程序中的溶劑捕集部50的升溫率,予以促進從溶劑捕集部50的溶劑的脫離。因此,可進一步縮短步驟S2的乾枯程序的所需時間。Such an infrared
在步驟S2的乾枯程序,如上述,由於來自頂板12的輻射熱會使得溶劑捕集部50升溫。因此,亦可為了進一步提高在步驟S2的乾枯程序中的溶劑捕集部50的升溫率,對頂板12的至少內壁面進行黑色化處理。頂板12的黑色化處理,在例如頂板12的材料方面使用鋁的情況下,為陽極氧化處理。In the drying process of step S2, as described above, the temperature of the
此外,在以上之例,使在步驟S2的乾枯程序中的溶劑捕集部50的位置為第2位置。第2位置如前述般,為在載台20與外部的搬送裝置之間傳遞基板G時的位置,有時非對溶劑捕集部50的升溫為最佳的位置。此情況下,可使在步驟S2的乾枯程序中的溶劑捕集部50的位置,例如為比第2位置接近頂板12的位置。據此,可作成為進一步予以促進透過了來自頂板12的輻射熱之溶劑捕集部50的升溫。In addition, in the above example, the position of the
[第2方式]
<減壓乾燥裝置>
圖10為針對第2方式之減壓乾燥裝置的示意構成進行繪示的縱剖面圖。
第2方式之減壓乾燥裝置,對於溶劑捕集部50,可如同第1方式般實施輻射率提升處理亦可未實施,此外亦可設置上述的第1方式的變形例之構成的至少任一者。
[Second way]
<Pressure reduction drying device>
FIG. 10 is a longitudinal cross-sectional view illustrating the schematic structure of the reduced pressure drying device of the second embodiment.
In the reduced pressure drying device of the second aspect, the
如前述般,於使用了第1方式之減壓乾燥裝置1的減壓乾燥處理,從基板G氣化的溶劑,非僅吸附於溶劑捕集部50,而亦吸附於腔室10的內壁面、保護網33、43。尤其,針對乾式泵浦31a之保護網33,在腔室10內被減壓時隔熱膨脹了的氣體大量通過,故比其他部分成為低溫,故溶劑的吸附量亦多。此外,保護網33由不鏽鋼如此之相對熱導率高的材料形成,難被升溫。As described above, in the vacuum drying process using the
於是,圖10的減壓乾燥裝置1a,不同於第1方式之減壓乾燥裝置,具備從保護網予以促進溶劑的脫離的促進功能,具體而言具備予以促進從針對乾式泵浦31a之保護網的脫離的促進功能。Therefore, the reduced
在圖10之例,減壓乾燥裝置1a,針對乾式泵浦31a之保護網100由熱導率比不鏽鋼高的材料形成,從而具備上述促進功能。
熱導率比不鏽鋼高的材料為例如鋁、銅、銀等。
In the example of Fig. 10, in the reduced
<減壓乾燥處理>
使用了圖10的減壓乾燥裝置1a的減壓乾燥處理,如同示於圖1~圖3的使用了減壓乾燥裝置1的減壓乾燥處理,包含前述的步驟S1~步驟S6。
<Reduced pressure drying>
The reduced pressure drying process using the reduced
如以上,在第2方式,減壓乾燥裝置1a具備從保護網100予以促進溶劑的脫離的促進功能。為此,於步驟S2的乾枯程序,可從保護網33將溶劑迅速地予以除去。因此,可縮短步驟S2的乾枯程序的所需時間。據此,可縮短在減壓乾燥處理中的包含步驟S2的乾枯程序的後處理程序的所需時間,可縮短減壓乾燥處理整體的所需時間。
換言之,在第2方式,予以促進從保護網33的溶劑的脫離,使至開始針對下個基板G之減壓乾燥處理為止之時間縮短,亦即使後處理程序之時間縮短。
As described above, in the second aspect, the reduced
[第2方式的變形例]
圖11為第2方式的變形例之減壓乾燥裝置具有的保護網的局部放大平面圖。
如在以下說明,在第2方式之減壓乾燥裝置,亦可設置加熱針對乾式泵浦31a之保護網的加熱部,予以促進從上述保護網的脫離的促進功能,由於透過了加熱部之上述保護網的加熱,因而予以促進上述脫離。
[Modification of the second method]
FIG. 11 is a partially enlarged plan view of a protective net provided in a reduced pressure drying device according to a modification of the second aspect.
As will be described below, the reduced pressure drying device of the second aspect may also be provided with a heating part that heats the protective net of the
圖11的針對乾式泵浦31a之保護網110,作為擔當予以促進從該保護網110的溶劑的脫離的促進功能的加熱部,熱媒流路110a被形成於其內部。
保護網110格子狀地配設有使從腔室10排氣的氣體通過用的貫通孔110b。熱媒流路110a具有在俯視下對應於貫通孔110b的配設狀態的形狀。
The
如此般在保護網110設置熱媒流路110a,於步驟S2的乾枯程序,使高溫的熱媒流於熱媒流路110a,亦使得可迅速進行在該乾枯程序中的從保護網110的溶劑的除去。In this way, the heat
圖12為針對擔當予以促進從保護網的溶劑的脫離的促進功能之加熱部的他例進行說明用的局部放大截面圖。
在圖12之例,作為予以促進從針對乾式泵浦31a之保護網33的溶劑的脫離的促進功能的加熱部,設有設置於保護網33並將保護網33直接加熱的直接加熱部120。直接加熱部120如同例如保護網33,為網狀的構件,電阻加熱線(未圖示)被設於其內部,被設為在排氣口13a內接於保護網33。
FIG. 12 is a partially enlarged cross-sectional view for explaining another example of the heating portion that serves to promote the detachment of the solvent from the protective net.
In the example of FIG. 12 , a
如此般設置直接加熱部120,在步驟S2的乾枯程序中,透過直接加熱部120加熱保護網33,亦使得可迅速地進行在該乾枯程序中的從保護網33的溶劑的除去。By arranging the
圖13為針對擔當予以促進從保護網的溶劑的脫離的促進功能之加熱部的他例進行說明用的局部放大截面圖。FIG. 13 is a partially enlarged cross-sectional view for explaining another example of the heating portion that serves to promote the detachment of the solvent from the protective net.
在圖13之例,於排氣口13a,經由排氣管131連接著將腔室10內減壓用的排氣機構31。排氣口13a、排氣機構31(具體而言排氣機構31中的連接排氣管131與乾式泵浦31a的部分)及排氣管131構成排氣線路130。排氣線路130為連接於乾式泵浦31a並將腔室10內排氣者。In the example of FIG. 13 , an
於排氣線路130,設有與前述的保護網33同樣的保護網132。其中,保護網132不同於保護網33,被設於排氣管131內。
此外,在圖13之例,擔當予以促進從保護網132的溶劑的脫離的促進功能的加熱部133,被設於排氣管131的外側。加熱部133透過加熱排氣管131從而加熱保護網132。加熱部133為例如電阻加熱器。
The
如此般設置加熱部133,在步驟S2的乾枯程序中,透過加熱部133加熱保護網132,亦使得可迅速地進行在該乾枯程序中的從保護網132的溶劑的除去。By arranging the
另外,針對渦輪分子泵浦41a之保護網方面,透過了渦輪分子泵浦41a之排氣在透過了乾式泵浦31a之排氣後被開始,故隔熱膨脹並被冷卻的氣體的通過量,比針對乾式泵浦31a之保護網33少。為此,針對渦輪分子泵浦41a之保護網,比起針對乾式泵浦31a之保護網,不會成為低溫,溶劑的吸附量少。因此,第2方式之減壓乾燥裝置,亦不具備予以促進從針對渦輪分子泵浦41a之保護網的溶劑的脫離的促進功能。其中,亦可具備予以促進從針對渦輪分子泵浦41a之保護網的溶劑的脫離的促進功能。In addition, regarding the protective net of the
在以上之例,雖個別設置針對乾式泵浦31a之排氣線路與針對渦輪分子泵浦41a之排氣線路,惟亦可將乾式泵浦31a與渦輪分子泵浦41a串聯連接,針對兩泵浦之排氣線路可設為共通。In the above example, although the exhaust line for the
[第3方式]
<減壓乾燥裝置>
圖14為針對第3方式之減壓乾燥裝置的示意構成進行繪示的縱剖面圖。
第3方式之減壓乾燥裝置,對於溶劑捕集部50,可如同第1方式般實施輻射率提升處理亦可未實施,此外亦可設置上述的第1方式的變形例之構成的至少任一者。再者,第3方式之減壓乾燥裝置,如同第2方式,亦可具備予以促進從針對乾式泵浦31a之保護網的溶劑的脫離的促進功能。
[3rd way]
<Pressure reduction drying device>
Fig. 14 is a longitudinal sectional view illustrating the schematic structure of a reduced pressure drying device according to a third aspect.
In the reduced pressure drying device of the third aspect, the
如前述般,在使用了第1方式之減壓乾燥裝置1的減壓乾燥處理中,腔室10內的減壓狀態被解除(具體而言腔室10內被返回大氣壓)時,由於絕熱壓縮使得腔室10內的氣體被加熱,由於此被加熱的氣體,使得溶劑捕集部50成為比減壓乾燥處理開始時高溫。As mentioned above, in the reduced pressure drying process using the reduced
於是,圖14的減壓乾燥裝置1b不同於第1方式之減壓乾燥裝置,具備將在解除了腔室10內的減壓狀態之際升溫的溶劑捕集部50冷卻的冷卻部。Therefore, the reduced
在圖14之例,減壓乾燥裝置1b作為上述冷卻部,具備噴射將溶劑捕集部50冷卻的冷卻氣體的氣體噴射部200。
氣體噴射部200例如從溶劑捕集部50之上方朝該溶劑捕集部50噴射冷卻氣體。氣體噴射部200具有延伸於例如X方向的配管201。配管201設於在腔室10內的溶劑捕集部50與頂板12之間,更具體而言設於成為第2位置的溶劑捕集部50與頂板12之間。此外,配管201在下部具有朝下方噴射冷卻氣體的噴射口(未圖示)。例如,配管201被沿著Y方向設置複數個。據此,可將溶劑捕集部50整體冷卻。氣體噴射部200將從設於腔室10的外部的冷卻氣體源供應的冷卻氣體,經由配管201的噴射口(未圖示),朝溶劑捕集部50噴射。冷卻氣體為例如N
2氣體等的惰性氣體。
In the example of FIG. 14 , the reduced
<減壓乾燥處理>
使用了圖14的減壓乾燥裝置1b的減壓乾燥處理,基本上如同使用了示於圖1~圖3的減壓乾燥裝置1的減壓乾燥處理,包含前述的步驟S1~步驟S5,前述的步驟S6的溶劑捕集部50的冷卻程序的具體的內容不同。在使用了示於圖1~圖3的減壓乾燥裝置1的減壓乾燥處理,於步驟S6的程序,使溶劑捕集部50輻射冷卻。相對於此,在使用了圖14的減壓乾燥裝置1b之減壓乾燥處理,透過氣體噴射部200將溶劑捕集部50積極地冷卻。
<Reduced pressure drying>
The reduced pressure drying process using the reduced
如以上,在第3方式,減壓乾燥裝置1b具備將溶劑捕集部50冷卻的冷卻部。為此,可於步驟S6的溶劑捕集部50的冷卻程序,將溶劑捕集部50迅速地冷卻直到減壓乾燥處理開始時的溫度為止。因此,可縮短步驟S6的溶劑捕集部50的冷卻程序的所需時間。據此,可縮短在減壓乾燥處理中的包含步驟S6的溶劑捕集部50的冷卻程序的後處理程序的所需時間,可縮短減壓乾燥處理整體的所需時間。
換言之,在第3方式,將在解除腔室10內的減壓狀態之際升溫了的溶劑捕集部50冷卻,從而使至開始針對下個基板G之減壓乾燥處理為止之時間縮短,亦即使後處理程序之時間縮短。
As described above, in the third aspect, the reduced
[氣體噴射部的變形例] 圖15為說明氣體噴射部的他例用的截面圖。 [Modification of the gas injection unit] FIG. 15 is a cross-sectional view illustrating another example of the gas injection unit.
圖15之例的氣體噴射部,從溶劑捕集部50之側方使該溶劑捕集部50承受而噴射冷卻氣體。此氣體噴射部具有設於溶劑捕集部50之側方的氣體噴射口210。氣體噴射口210設於例如側壁11。此外,氣體噴射口210例如被朝X方向正側與X方向負側雙方,分別沿著Y方向設置複數個。氣體噴射口210的高度位置,為前述的第2位置。氣體噴射口210將從設於腔室10的外部的冷卻氣體源供應的冷卻氣體,朝溶劑捕集部50噴射。The gas injection part in the example of FIG. 15 injects the cooling gas while receiving the
使用具有如此的氣體噴射口210的冷卻部,亦可在步驟S6的溶劑捕集部50的冷卻程序中,將溶劑捕集部50迅速冷卻直到減壓乾燥處理開始時的溫度為止。Using the cooling unit having such a
圖16為說明將溶劑捕集部50冷卻的冷卻部的他例用的截面圖。
在圖16之例,作為將溶劑捕集部50冷卻的冷卻部,設有朝腔室10內送風的送風部220。
FIG. 16 is a cross-sectional view illustrating another example of the cooling unit for cooling the
送風部220具有風扇過濾器單元(FFU)221與配管222。
送風部220例如連接於側壁11之與搬出入口11a相反側。在與側壁11之搬出入口11a相反側(圖的X方向正側),亦即在與側壁11之搬出入口11a相向的部分,設有開口11b。開口11b設於與第2位置對應的高度位置。對於此開口11b,經由配管222連接著FFU221。
送風部220使用FFU221,經由開口11b,朝搬出入口11a的方向送風,將溶劑捕集部50冷卻。換言之,送風部220將來自FFU221的清淨氣體,經由開口11b送入腔室10內,透過送入的清淨氣體,將在第2位置的溶劑捕集部50冷卻。此外,送風部220透過來自FFU221的清淨氣體,在腔室10內,形成沿著溶劑捕集部50的層流。
The
另外,開口11b設為可透過閘閥230進行開閉。FFU221及閘閥230被透過控制部U進行控制。In addition, the
送風部220在步驟S6的溶劑捕集部50的冷卻程序中,被在使腔室10的開口11b為開狀態後使用。此外,送風部220在步驟S6的溶劑捕集部50的冷卻程序中,被在使腔室10的搬出入口11a為開狀態後使用。The
使用如上述的送風部220,亦可在步驟S6的溶劑捕集部50的冷卻程序中,將溶劑捕集部50迅速地冷卻直到減壓乾燥處理開始時的溫度為止。Using the
此外,使用送風部220,以沿著溶劑捕集部50的層流,將該溶劑捕集部50冷卻,從而可抑制不必要的部分(例如載台20等)被冷卻的情形。
再者,在透過從送風部220的送風將溶劑捕集部50冷卻之際,使腔室10的搬出入口11a為開狀態,以從送風部220朝搬出入口11a送風的氣體將溶劑捕集部50冷卻,使得來自送風部220的氣體被從腔室10內經由搬出入口11a平順地排出。因此,可透過來自送風部220的氣體從而抑制腔室10內的顆粒飛舞。
In addition, the
本次揭露的方式,應視為所有方面皆為例示性而非限制性者。上述的實施方式,可在不脫離申請專利範圍及其趣旨之下,以各種的方式進行省略、置換、變更。The manner of this disclosure should be considered in all respects as illustrative and not restrictive. The above-described embodiments may be omitted, replaced, or modified in various ways without departing from the scope of the patent application and its spirit.
1b:減壓乾燥裝置 10:腔室 20:載台 200:氣體噴射部 210:氣體噴射口 220:送風部 G:基板 1b: Reduced pressure drying device 10: Chamber 20: Carrier platform 200:Gas injection part 210:Gas injection port 220: Air supply part G: Substrate
[圖1]為示意性針對第1方式之減壓乾燥裝置內進行繪示的橫截面圖。 [圖2]為圖1的A-A線截面圖。 [圖3]為圖1的B-B線截面圖。 [圖4]為溶劑捕集部的局部放大平面圖。 [圖5]為說明使用了圖1的減壓乾燥裝置的減壓乾燥處理的一例用的流程圖。 [圖6]為針對在未對圖1的減壓乾燥裝置的溶劑捕集部實施輻射率提升處理的情況下的腔室內的壓力之時間變化進行繪示的圖。 [圖7]為針對第1方式的變形例之減壓乾燥裝置的示意構成進行繪示的橫截面圖。 [圖8]為針對第1方式的其他變形例之減壓乾燥裝置的示意構成進行繪示的縱截面圖。 [圖9]為針對第1方式的其他變形例之減壓乾燥裝置的示意構成進行繪示的縱截面圖。 [圖10]為針對第2方式之減壓乾燥裝置的示意構成進行繪示的縱剖面圖。 [圖11]為第2方式的變形例之減壓乾燥裝置具有的保護網的局部放大平面圖。 [圖12]為針對擔當予以促進從保護網的溶劑的脫離的促進功能之加熱部的他例進行說明用的局部放大截面圖。 [圖13]為針對擔當予以促進從保護網的溶劑的脫離的促進功能之加熱部的他例進行說明用的局部放大截面圖。 [圖14]為針對第3方式之減壓乾燥裝置的示意構成進行繪示的縱剖面圖。 [圖15]為說明氣體噴射部的他例用的截面圖。 [圖16]為說明將溶劑捕集部冷卻的冷卻部的他例用的截面圖。 [Fig. 1] is a cross-sectional view schematically illustrating the inside of the reduced pressure drying device of the first embodiment. [Fig. 2] is a cross-sectional view along line A-A in Fig. 1. [Fig. 3] is a cross-sectional view taken along line B-B in Fig. 1. [Fig. 4] is a partially enlarged plan view of the solvent collection section. [Fig. 5] A flow chart illustrating an example of a reduced pressure drying process using the reduced pressure drying device of Fig. 1. [Fig. [Fig. 6] A diagram illustrating the temporal change of the pressure in the chamber when the radiation rate increasing process is not performed on the solvent collection part of the reduced pressure drying device of Fig. 1. [Fig. [Fig. 7] is a cross-sectional view illustrating the schematic structure of a reduced pressure drying device according to a modification of the first aspect. [Fig. 8] is a longitudinal cross-sectional view illustrating the schematic structure of a reduced pressure drying device according to another modification of the first aspect. [Fig. 9] is a longitudinal cross-sectional view illustrating the schematic structure of a reduced pressure drying device according to another modification of the first aspect. [Fig. 10] is a longitudinal sectional view illustrating the schematic structure of the reduced pressure drying device of the second embodiment. [Fig. 11] Fig. 11 is a partially enlarged plan view of a protective net provided in a reduced pressure drying device according to a modified example of the second aspect. [Fig. 12] Fig. 12 is a partially enlarged cross-sectional view for illustrating another example of the heating portion that serves to promote the detachment of the solvent from the protective net. [Fig. 13] Fig. 13 is a partially enlarged cross-sectional view for illustrating another example of the heating portion that serves to promote the detachment of the solvent from the protective net. [Fig. 14] is a longitudinal sectional view illustrating the schematic structure of a reduced pressure drying device according to a third aspect. [Fig. 15] Fig. 15 is a cross-sectional view illustrating another example of the gas injection unit. [Fig. 16] Fig. 16 is a cross-sectional view illustrating another example of the cooling unit that cools the solvent collection unit.
1b:減壓乾燥裝置 1b: Reduced pressure drying device
10:腔室 10: Chamber
11:側壁 11:Side wall
11a:搬出入口 11a: Moving out entrance
12:頂板 12:Top plate
13b:排氣口 13b:Exhaust port
14:閘閥 14: Gate valve
20:載台 20: Carrier platform
40:排氣線路 40:Exhaust line
41:排氣機構 41:Exhaust mechanism
41a:渦輪分子泵浦 41a: Turbomolecular pump
42:排氣管 42:Exhaust pipe
43:保護網 43:Protection net
50:溶劑捕集部 50: Solvent collection department
60:支撐構件 60:Supporting components
200:氣體噴射部 200:Gas injection part
201:配管 201:Piping
G:基板 G: Substrate
Claims (16)
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JP2021078747A JP2022172684A (en) | 2021-05-06 | 2021-05-06 | Vacuum dryer, vacuum drying method, and method for shortening the time for vacuum drying process |
JP2021-078755 | 2021-05-06 | ||
JP2021078742A JP2022172679A (en) | 2021-05-06 | 2021-05-06 | Vacuum dryer, vacuum drying method, and method for shortening the time for vacuum drying process |
JP2021078755A JP2022172691A (en) | 2021-05-06 | 2021-05-06 | Vacuum dryer, vacuum drying method, and method for shortening the time for vacuum drying process |
JP2021-078742 | 2021-05-06 | ||
JP2021-078747 | 2021-05-06 |
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JP6909617B2 (en) * | 2016-09-30 | 2021-07-28 | 東京エレクトロン株式会社 | Decompression drying device |
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