TW202335117A - 雷射迴銲方法 - Google Patents
雷射迴銲方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 27
- 239000004065 semiconductor Substances 0.000 claims abstract description 43
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Abstract
[課題]提供一種可抑制半導體晶片的外周部中之連接不良之雷射迴銲方法。[解決手段]一種雷射迴銲方法,其包含:準備步驟,其準備包含基板與半導體晶片之被加工物,所述半導體晶片係在一側的面具有凸塊且透過該凸塊而載置於該基板上;以及雷射光束照射步驟,其從該一側的面的相反側的另一側的面,對該半導體晶片照射雷射光束而使該被加工物的被照射區域所含之凸塊迴銲。在該雷射光束照射步驟中,從該被照射區域之中包含外周部之區域朝向該被照射區域之中包含中央部之區域,一邊階段性地變更照射範圍一邊照射雷射光束。
Description
本發明係關於一種雷射迴銲方法。
在半導體元件的製程中,在將晶片與外部端子電性連接之方法之一,存在將晶片的電極與封裝基板上的電極面對並透過凸塊而進行連接之覆晶安裝方式。
一般而言,在覆晶安裝中,採用加熱基板整體而進行接合之大量迴銲(Mass Reflow)程序,以及藉由將各晶片進行加熱、加壓而接合之TCB(Thermo-Compression Bonding;熱壓接合)程序等。然而,大量迴銲程序會有因加熱基板整體所致之熱應力之課題,TCB程序會有焊頭的冷卻耗費時間等生產性不佳之課題。
作為相對於如上述般的程序而有優越性之程序,已提案一種藉由雷射照射而將晶片與基板上的電極連接之雷射迴銲程序(參照專利文獻1、2)。在雷射迴銲程序中,因不會對基板整體施加熱,故可降低熱應力,並且,有藉由對多個晶片照射雷射光束而獲得比TCB程序更高的生產性之優點。
[習知技術文獻]
[專利文獻]
[專利文獻1]日本特開2008-177240號公報
[專利文獻2]日本特開2021-102217號公報
[發明所欲解決的課題]
然而,在雷射迴銲程序中,已知相較於其他的程序而發現在晶片的外周部的接合不良稍多。本申請人等針對此主因等進行驗證,推測起因於在晶片的中央部與外周部的熱的傳遞方式不同,而晶片的中央部先接合且晶片發生翹曲,藉此引起外周部的接合不良。
因此,本發明之目的在於提供一種雷射迴銲方法,其可抑制半導體晶片的外周部中之連接不良。
[解決課題的技術手段]
根據本發明,提供一種雷射迴銲方法,其具備:準備步驟,其準備包含基板與半導體晶片之被加工物,所述半導體晶片係在一側的面具有凸塊且透過該凸塊而載置於該基板上;以及雷射光束照射步驟,其從該一側的面的相反側的另一側的面,對該半導體晶片照射雷射光束而使該被加工物的被照射區域所含之凸塊迴銲,在該雷射光束照射步驟中,從包含該被照射區域之中的外周部之區域朝向包含該被照射區域之中的中央部之區域,一邊階段性地變更照射範圍一邊照射雷射光束。
較佳為,在該雷射光束照射步驟中,伴隨該照射範圍的變更而變更雷射光束的功率密度。
較佳為,在該雷射光束照射步驟中,階段性地被變更之該照射範圍之中,照射至預定的照射範圍之雷射光束的功率密度係被設定成照射至比該預定的照射範圍更靠該外周部側的照射範圍之雷射光束的功率密度以下。
[發明功效]
根據本發明,可抑制半導體晶片的外周部中之連接不良。
以下,針對本發明的實施方式,一邊參照圖式一邊進行詳細說明。本發明並不受限於以下的實施方式所記載之內容。並且,在以下所記載之構成要素中,包含本發明所屬技術領域中具有通常知識者可輕易思及者、實質上相同者。再者,以下所記載之構成能適當組合。並且,在不脫離本發明的主旨之範圍內可進行構成的各種省略、取代或變更。
基於圖式說明本發明的實施方式之雷射迴銲方式。圖1係表示實施方式之雷射迴銲方法的流程之流程圖。如圖1所示,雷射迴銲方法具備準備步驟1與雷射光束照射步驟2。
(準備步驟1)
圖2係在圖1所示之準備步驟1中準備之被加工物10的立體圖。圖3係圖2所示之被加工物10的主要部分剖面圖。如圖2及圖3所示,被加工物10包含基板20與具有凸塊40之半導體晶片30。
準備步驟1係準備半導體晶片30被載置於基板20上之被加工物10之步驟。此時,半導體晶片30係在將具有凸塊40之一側的面(正面31)朝向下之狀態下,透過凸塊40而被載置於正面21側朝向上之基板20的正面21側。
在實施方式中,基板20為矩形狀。基板20係例如PCB基板(Printed Circuit Board,印刷電路板)、分割成晶片前的元件晶圓等。在基板20的正面側21係透過凸塊40而配置有多個半導體晶片30。半導體晶片30在正面31具有多個凸塊40。凸塊40係設於半導體晶片30的正面31之突起狀的端子。
半導體晶片30係藉由加熱並熔化凸塊40,而與基板20上的電極連接。亦即,在準備步驟1中準備之被加工物10係藉由以雷射光束61(參照圖4)使凸塊40迴銲而預定將半導體晶片30對基板20進行覆晶安裝者。
此外,被加工物10除了為透過凸塊40而將實施方式中之半導體晶片30排列於基板20者以外,亦可為層積有多個半導體晶片30且在各個半導體晶片30間存在凸塊40者等。
(雷射光束照射步驟2)
圖4係表示圖1所示之雷射光束照射步驟2中之被加工物10的一狀態之主要部分剖面圖。圖5係表示實施圖1所示之雷射光束照射步驟2之雷射迴銲裝置50的光學系統的構成例之圖。雷射光束照射步驟2係對半導體晶片30照射雷射光束61而使被加工物10的被照射區域11所含之凸塊40迴銲之步驟。
實施方式的雷射光束照射步驟2係藉由具備圖5所示之光學系統之雷射迴銲裝置50而實施。雷射迴銲裝置50具備加工台51、雷射光束照射單元60、未圖示的移動單元、未圖示的攝像單元與未圖示的控制器。
加工台51將被加工物10保持於保持面52。雷射光束照射單元60使雷射光束61對被保持於被加工台51之被加工物10進行照射。未圖示的移動單元使加工台51與雷射光束照射單元60相對地移動。未圖示的攝像單元拍攝加工台51上的被加工物10,且用於將被加工物10的位置與照射雷射光束61之照射部的位置進行對準。未圖示的控制器控制各構成要素。
如圖5所示,雷射光束照射單元60包含雷射光源62、均勻照射單元63、導光單元64、空間光調變手段65、成像系統66、擴大成像透鏡67及遠心透鏡(telecentric lenses)68。
雷射光源62射出雷射光束61。雷射光源62例如包含光纖雷射、具有單一的雷射二極體(LD)之單一光源,或者配置有多個雷射二極體之多光源等。從雷射光源62射出之雷射光束61為對被加工物10(半導體晶片30)具有吸收性之波長的連續波(CW)。
均勻照射單元63配置於雷射光源62的後段。均勻照射單元63係用於藉由從均勻照射單元63射出之雷射光束61而對於後述的空間光調變手段65形成均勻照射面者。在此均勻照射面,雷射光束61的功率密度成為均勻的密度。
在雷射光源62為多光源之情形中,較佳特別設置均勻照射單元63。亦在單一光源的情形、在形成高斯分布之光源的情形中,較佳為了形成完全的平頂(top-hat)分布而設置均勻照射單元63,並且,即使在形成平頂分布之光源的情形中,較佳為了成為更完全的平頂分布而進行設置。
作為均勻照射單元63,例如可利用藉由準直透鏡與非球面透鏡的組合而形成均勻照射面者、藉由準直透鏡、DOE(Diffractive Optical Element,繞射光學元件)及聚光透鏡的組合而形成均勻照射面者、藉由棒狀透鏡(由玻璃所構成之筒狀構件)或光導管(以鏡子圍繞而成之中空的筒狀構件,亦稱為均質化棒(homogenizer rod))與導光單元(中繼透鏡或光纖)的組合而形成均勻照射面者、藉由準直透鏡與第一透鏡陣列及第二透鏡陣列(將多個棒狀透鏡捆束而形成陣列狀者或將透鏡面加工成陣列狀者)與聚光透鏡的組合而形成均勻照射面之物等。
導光單元64為用於將藉由均勻照射單元63所形成之均勻照射面的光轉移至空間光調變手段65的單元。此外,雷射光束照射單元60未包含均勻照射單元63之情形,導光單元64將來自雷射光源62的直接的光轉移至空間光調變手段65。導光單元64例如藉由光纖或中繼透鏡(組合透鏡)而構成。
空間光調變手段65包含空間光調變元件,且為能控制所射出之雷射光束61的強度(功率密度)的空間密度分布的被稱為SLM(Spatial Light Modulator,空間光調變器)者。空間光調變手段65係藉由控制雷射光束61的功率密度的空間密度分布,而控制往被加工物10照射雷射光束61之際的被加工物10的被照射區域11(參照圖4及後述的圖6至圖9)中之雷射光束61的照射範圍14的形狀。作為空間光調變手段65,例如可利用習知的反射型液晶LCOS(Liquid-Crystal on Silicon,液晶覆矽)、穿透型液晶LCP(Liquid Crystal Panel,液晶面板)、Deformable Mirror(可變形反射鏡)、DMD(Digital Micro-mirror Device,數位微鏡裝置)等習知的SLM裝置。實施方式的空間光調變手段65為LCOS。
成像系統66將射入之雷射光束61進行成像。成像系統66係以成像透鏡所構成,所述成像透鏡係由單一的透鏡或組合透鏡而成,在圖5所示之一例中,將雙凸透鏡與雙凹透鏡依序配置而構成。此外,在空間光調變手段65係藉由空間光調變元件而兼備成像系統66(成像透鏡)的功能之情形中,亦可省略成像系統66。
擴大成像透鏡67係將以成像系統66所成像之像(共軛像)擴大並成像於被加工物10的雷射被照射面(被照射區域11)者。此外,亦可省略擴大成像67。
遠心透鏡68用於使雷射光束61相對於被加工物10的雷射被照射面(被照射區域11)垂直地射入,亦即,與光軸平行地射入。此外,亦可將成像系統66構成為遠心透鏡68,並且,亦可省略遠心透鏡68而構成光學系統。
實施方式的雷射光束照射單元60藉由包含成像系統66、擴大成像透鏡67及遠心透鏡68之成像手段,而將雷射光61成像於加工台51上的被加工物10中之與半導體晶片30的背面32對應之區域。此外,在雷射光束照射單元60中,亦可對多個半導體晶片30同時地進行照射。
在雷射光束照射步驟2中,首先,將加工物10保持於加工台51的保持面52。此時,保持面52保持基板20的背面22側,基板20為在正面21側透過凸塊40而載置有半導體晶片30之狀態。接著,藉由攝像單元(未圖示)拍攝加工台51上的被加工物10,藉由移動單元(未圖示)使加工台51與雷射光束照射單元60相對地移動,執行將被加工物10的位置與雷射光束照射單元60的照射部的位置進行對位之對準。
在雷射照攝步驟2中,從半導體晶片30的與具有凸塊40之一側的面(正面31)相反側的另一側的面(背面32),對半導體晶片30照射雷射光束61。此時,雷射光束61的被照射區域11係與半導體晶片30的背面32整面對應。在實施方式的雷射光束照射步驟2中,對被照射區域11照射一秒鐘的雷射光束61。
圖6係表示被加工物10的被照射區域11中第一階段的照射範圍14-1之俯視圖。圖7係表示被加工物10的被照射區域11中第二階段的照射範圍14-2之俯視圖。圖8係表示被加工物10的被照射區域11中第三階段的照射範圍14-3之俯視圖。圖9係表示被加工物10的被照射區域11中第四階段的照射範圍14-4之俯視圖。
在雷射光束照射步驟2中,如從圖6至圖9所示,一邊對於被照射區域11階段性地變更雷射光束61的照射範圍14,一邊照射雷射光束61。在實施方式的雷射光束照射步驟2中,分成四階段而照射雷射光束61。此外,在實施方式中,雷射光束61的照射範圍14的變更係藉由空間光調變手段65控制雷射光束61的功率密度的空間密度分布而實施。
亦即,執行被加工物10的位置與雷射光束照射單元60的照射部的位置的對準之後,在雷射光束照射步驟2中,藉由空間光調變手段65而將雷射光束61的照射範圍14的形狀變更成圖6所示之第一階段中之照射範圍14-1。
如圖6所示,第一階段中之雷射光束61的照射範圍14-1包含被照射區域11之中的外周部12。外周部12為被照射區域11的外周緣及其附近的環形狀的區域,且為與半導體晶片30的外周部對應之區域。實施方式的照射範圍14-1為沿著矩形狀的半導體晶片30的外周緣之矩形的框形狀。
在雷射光束照射步驟2中,藉由對第一階段的照射範圍14-1照射雷射光束61,而使包含與照射範圍14-1對應之外周部12之區域所含之凸塊40迴銲,使半導體晶片30的包含與外周部12對應之照射範圍14-1之環形狀(矩形狀)的部分與基板20接合。
在雷射光束照射步驟2中,接著,藉由空間光調變手段65而將雷射光束61的照射範圍14的形狀變更成圖7所示之第二階段中之照射範圍14-2。如圖7所示,第二階段中之雷射光束61的照射範圍14-2為與圖6所示之照射範圍14-1的內側相鄰之環形狀的區域。實施方式的照射範圍14-2為矩形的框形狀。
在雷射光束照射步驟2中,對第一階段的照射範圍14-1照射雷射光束61之後,藉由對第二階段的照射範圍14-2照射雷射光束61,而使與照射範圍14-2對應之區域所含之凸塊40迴銲,且半導體晶片30的比外周部12更靠內側的與照射範圍14-2對應之環形狀(矩形狀)的部分繼外周部12之後與基板20接合。
在雷射光束照射步驟2中,接著,藉由空間光調變手段65而將雷射光束61的照射範圍14的形狀變更成圖8所示之第三階段中之照射範圍14-3。如圖8所示,第三階段中之雷射光束61的照射範圍14-3為與圖7所示之照射範圍14-2的更內側相鄰之環形狀的區域。實施方式的照射範圍14-3為矩形的框形狀。
在雷射光束照射步驟2中,對第二階段的照射範圍14-2照射雷射光束61之後,藉由對第三階段的照射範圍14-3照射雷射光束61,而使與照射範圍14-3對應之區域所含之凸塊40迴銲,且半導體晶片30的比照射範圍14-2更靠內側的與照射範圍14-3對應之環形狀(矩形狀)的部分繼與照射範圍14-2對應之部分之後與基板20接合。
在雷射光束照射步驟2中,接著,藉由空間光調變手段65而將雷射光束61的照射範圍14的形狀變更成圖9所示之第四階段中之照射範圍14-4。如圖9所示,第四階段中之雷射光束61的照射範圍14-4為與圖8所示之照射範圍14-3的更內側相鄰、且包含被照射區域11之中的中央部13。中央部13係與半導體晶片30的中央部對應之區域。實施方式的照射範圍14-4為矩形狀。
在雷射光束照射步驟2中,對第三階段的照射範圍14-3照射雷射光束61之後,藉由對第四階段的照射範圍14-4照射雷射光束61,而使包含與照射範圍14-4對應之中央部13之區域所含之凸塊40迴銲,且半導體晶片30的與包含中央部13之照射範圍14-4對應之矩形狀的部分繼與照射範圍14-3對應之部分之後與基板20接合。
如此,在雷射光束照射步驟2中,在一秒鐘的照射時間中,一邊從被加工物10的被照射區域11之中包含外周部12之區域朝向包含中央部13之區域階段性地變更照射範圍14,一邊照射雷射光束61。藉此,在雷射光束照射步驟2,使被照射區域11所含之凸塊40從半導體晶片30的外周部12朝向中央部13依序迴銲。
在雷射光束照射步驟2中,亦可伴隨照射範圍14的變更而變更雷射光束61的功率密度。此情形,功率密度係被設定成照射至包含外周部12之區域之雷射光束61的功率密度大於照射至包含中央部13之區域之雷射光束61的功率密度。
以三階段以上變更照射範圍14之情形,可在全部的變更時變更功率密度,亦可在至少任一個的變更時變更功率密度。亦即,只要階段性地被變更之照射範圍14之中,照射至預定的照射範圍14(例如,照射範圍14-3)之雷射光束61的功率密度係被設定成照射至比預定的照射範圍14更靠外周部12側的照射範圍14(例如,照射範圍14-2)照射之雷射光束61的功率密度以下即可。此情形,實施方式的照射範圍14中之雷射光束61的功率密度的關係成立為:(照射範圍14-1的功率密度)≥(照射範圍14-2的功率密度)≥(照射範圍14-3的功率密度)≥(照射範圍14-4的功率密度)。
並且,亦可從外周部12朝向中央部13而依序將功率密度變小。此情形,實施方式的照射範圍14中之雷射光束61的功率密度的關係成立為:(照射範圍14-1的功率密度)>(照射範圍14-2的功率密度)>(照射範圍14-3的功率密度)>(照射範圍14-4的功率密度)。
圖10係表示比較例的照射範圍14-5之俯視圖。比較例的照射範圍14-5包含被照射區域11的全域。亦即,在比較例的雷射光束照射步驟2中,將雷射光束61對被照射區域11均勻照射一秒鐘。比較例的情形,因半導體晶片30的外周部12與外部空氣接觸,故熱容易逸出,相較於中央部13溫度難以上升,因此,在比較例的雷射光束照射步驟2之凸塊40被迴銲之半導體晶片30會因中央部13先接合而發生晶片翹曲。
相對於此,實施方式的雷射迴銲方法係在雷射光束照射步驟2中,從外周部12往中央部13階段性地照射雷射光束61。藉此,可將外周部12比中央部13更先接合,因此可抑制起因於中央部13先被接合之晶片翹曲的發生。因此,可抑制半導體晶片30的外周部12中之連接不良。
此外,本發明不受限於上述實施方式。亦即,在不脫離本發明的主旨之範圍內可進行各種變形並實施。例如,在實施方式中,雷射光束61的照射範圍14的變更雖使用空間光調變手段65(LCOS)而實施,但例如亦可預先準備將雷射光束61的一部分遮光之遮罩,藉由機械性地移動遮罩而進行變更。
並且,針對階段性地變更之多個照射範圍14,在實施方式中,雖外周部12側的照射範圍14(例如,照射範圍14-2)與中央部13側的照射範圍14(例如,照射範圍14-3)鄰接,但在本發明中,亦可設定成外周部12側的照射範圍14與中央部13側的照射範圍14一部分重疊。
10:被加工物
11:被照射區域
12:外周部
13:中央部
14,14-1,14-2,14-3,14-4,14-5:照射範圍
20:基板
30:半導體晶片
31:正面(一側的面)
32:背面(另一側的面)
40:凸塊
61:雷射光束
圖1係表示實施方式之雷射迴銲方法的流程之流程圖。
圖2係在圖1所示之準備步驟中準備之被加工物的立體圖。
圖3係圖2所示之被加工物的主要部分剖面圖。
圖4係表示圖1所示之雷射光束照射步驟中之被加工物的一狀態之主要部分剖面圖。
圖5係表示實施圖1所示之雷射光束照射步驟之雷射迴銲裝置的光學系統的構成例之圖。
圖6係表示被加工物的被照射區域中第一階段的照射範圍之俯視圖。
圖7係表示被加工物的被照射區域中第二階段的照射範圍之俯視圖。
圖8係表示被加工物的被照射區域中第三階段的照射範圍之俯視圖。
圖9係表示被加工物的被照射區域中第四階段的照射範圍之俯視圖。
圖10係表示比較例的照射範圍之俯視圖。
1:準備步驟
2:雷射光束照射步驟
Claims (3)
- 一種雷射迴銲方法,其具備: 準備步驟,其準備包含基板與半導體晶片之被加工物,該半導體晶片係在一側的面具有凸塊且透過該凸塊而載置於該基板上;以及 雷射光束照射步驟,其從該一側的面的相反側的另一側的面,對該半導體晶片照射雷射光束而使該被加工物的被照射區域所含之凸塊迴銲, 在該雷射光束照射步驟中,從包含該被照射區域之中的外周部之區域朝向包含該被照射區域之中的中央部之區域,一邊階段性地變更照射範圍一邊照射雷射光束。
- 如請求項1之雷射迴銲方法,其中,在該雷射光束照射步驟中,伴隨該照射範圍的變更而變更雷射光束的功率密度。
- 如請求項1或2之雷射迴銲方法,其中,在該雷射光束照射步驟中,階段性地被變更之該照射範圍之中,照射至預定的照射範圍之雷射光束的功率密度係被設定成照射至比該預定的照射範圍更靠該外周部側的照射範圍之雷射光束的功率密度以下。
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