TW202334354A - 用於半導體加工用黏著帶之黏著劑組合物、及使用該黏著劑組合物之黏著帶 - Google Patents
用於半導體加工用黏著帶之黏著劑組合物、及使用該黏著劑組合物之黏著帶 Download PDFInfo
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- TW202334354A TW202334354A TW111137203A TW111137203A TW202334354A TW 202334354 A TW202334354 A TW 202334354A TW 111137203 A TW111137203 A TW 111137203A TW 111137203 A TW111137203 A TW 111137203A TW 202334354 A TW202334354 A TW 202334354A
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- adhesive tape
- polymer
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- C—CHEMISTRY; METALLURGY
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- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
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Abstract
本發明之課題在於提供一種用於半導體加工用黏著帶之黏著劑組合物,其具有優異之凹凸填埋性及黏著性,並且能夠防止剝離時對被黏著體之糊劑殘留。
本發明之實施方式之用於半導體加工用黏著帶之黏著劑組合物包含基礎聚合物、及光聚合起始劑,且該基礎聚合物係藉由使包含具有羥基之聚合物與式(1)所表示之單體之單體組合物聚合而獲得的聚合物:
Description
本發明係關於一種用於半導體加工用黏著帶之黏著劑組合物、及使用該黏著劑組合物之黏著帶。
半導體晶圓用於個人電腦、智慧型手機、汽車等各種用途。在半導體晶圓之加工步驟中,黏著帶用於在加工時保護表面。近年來,正在發展大規模積體電路(LSI)之微細化及高功能化,晶圓之表面結構變得複雜。具體而言,可例舉由焊料凸塊等導致晶圓表面之立體結構複雜化。因此,對半導體加工步驟中使用之黏著帶要求晶圓表面之凹凸之填埋性及強黏著性。
近年來,隨著各製品之小型化及薄型化,正在推進半導體晶圓之薄型化。在加工成薄型之晶圓中,當黏著帶之黏著力過高之情形時,在剝離黏著帶時,有晶圓破損之情形。因此,為了防止對被黏著體之糊劑殘留及剝離時之晶圓之破損,提出了使用紫外線硬化型黏著劑之黏著帶(例如,專利文獻1及2)。然而,即使當使用紫外線硬化型黏著劑之情形時,黏著力亦未充分降低,而可能產生對被黏著體之糊劑殘留、及晶圓破損之問題。
[先前技術文獻]
[專利文獻]
[專利文獻1]日本專利特開2020-017758號公報
[專利文獻2]日本專利特開2013-213075號公報
[發明所欲解決之問題]
本發明係為了解決上述先前之問題而完成,其目的在於提供一種用於半導體加工用黏著帶之黏著劑組合物,其具有優異之凹凸填埋性及黏著性,並且能夠防止剝離時對被黏著體之糊劑殘留。
[解決問題之技術手段]
本發明之實施方式之用於半導體加工用黏著帶之黏著劑組合物包含基礎聚合物、及光聚合起始劑,且該基礎聚合物係藉由使包含具有羥基之聚合物與式(1)所表示之單體之單體組合物聚合而獲得的聚合物:
[化1]
(式中,n為1以上之整數)。
在一個實施方式中,相對於上述具有羥基之聚合物之羥基,式(1)所表示之單體之加成量為50莫耳%~95莫耳%。
在一個實施方式中,上述式(1)所表示之單體係異氰酸2-(2-甲基丙烯醯氧基乙氧基)乙酯。
在一個實施方式中,上述具有羥基之聚合物之聚合所使用之單體組合物中之含羥基單體之含有比率為10莫耳%~40莫耳%。
在本發明之另一方面中,提供一種半導體加工用黏著帶。該半導體加工用黏著帶具有:基材、及由上述黏著劑組合物形成之黏著劑層。
在一個實施方式中,上述半導體加工用黏著帶用於背面研磨步驟。
在一個實施方式中,當未照射紫外線時,上述黏著劑層之25℃下之剪切儲存彈性模數G'1為0.2 MPa以上。
在一個實施方式中,上述半導體加工用黏著帶係貼附至具有凹凸之被黏著體使用。
在一個實施方式中,上述黏著劑層在紫外線照射後之25℃下之拉伸儲存彈性模數E'1為200 MPa以下。
在一個實施方式中,上述黏著劑層在紫外線照射後之對矽黏著力為0.15 N/20 mm以下。
[發明之效果]
根據本發明之實施方式,能夠提供一種具有優異之凹凸填埋性及黏著性,並且能夠防止剝離時對被黏著體之糊劑殘留的黏著劑組合物。因此,能夠良好地用於使用表面具有凹凸之半導體晶圓之半導體加工步驟。
A. 用於半導體加工用黏著帶之黏著劑組合物
本發明之實施方式之用於半導體晶圓加工用黏著帶之黏著劑組合物包含基礎聚合物及光聚合起始劑。該基礎聚合物係藉由使包含具有羥基之聚合物與式(1)所表示之單體之單體組合物聚合而獲得的聚合物。使用包含光聚合起始劑之黏著劑組合物之黏著帶藉由在剝離時照射紫外線使黏著劑層硬化而提昇剝離性。即使當使用包含光聚合起始劑之黏著劑組合物之情形時,在用於表面具有凹凸之半導體晶圓之加工時,亦有產生糊劑殘留之情況。藉由將包含式(1)所表示之單體成分之單體組合物聚合而獲得之聚合物用作黏著劑組合物之基礎聚合物,能夠獲得即使在用於表面具有凹凸之半導體晶圓之加工之情形時亦能夠防止剝離時對被黏著體之糊劑殘留的黏著劑組合物。進而,包含該基礎聚合物之黏著劑組合物能夠發揮半導體晶圓表面之優異之凹凸填埋性及黏著性。因此,本發明之實施方式之黏著劑組合物能夠良好地用於表面結構複雜之半導體晶圓之加工。在本說明書中,單體組合物可為僅包含單體之組合物,亦可為包含單體與低聚物及聚合物等任意其他成分之組合物。
[化1]
(式中,n為1以上之整數)。
A-1. 基礎聚合物
基礎聚合物係藉由使包含具有羥基之聚合物與式(1)所表示之單體之單體組合物(以下亦稱為「基礎聚合物用單體組合物」)聚合而獲得的聚合物。藉由使基礎聚合物用單體組合物聚合,能夠使式(1)所表示之單體加成聚合至具有羥基之聚合物。其結果,能夠獲得具有源自式(1)所表示之單體之結構單元之聚合物。藉由將該聚合物用作基礎聚合物,能夠提供具有優異之凹凸填埋性及黏著性,並且能夠防止剝離時對被黏著體之糊劑殘留的黏著劑組合物。
[化2]
(式中,n為1以上之整數)。
基礎聚合物之重量平均分子量較佳為30萬以上,更佳為40萬以上,進而較佳為60萬~100萬。若為此種範圍,則能夠防止低分子量成分之滲出,獲得低污染性之黏著劑組合物。基礎聚合物之分子量分佈(重量平均分子量/數量平均分子量)較佳為1~20,更佳為3~10。藉由使用分子量分佈狹窄之基礎聚合物,能夠防止低分子量成分之滲出,獲得低污染性之黏著劑組合物。再者,重量平均分子量及數量平均分子量可藉由凝膠滲透層析測定(溶劑:四氫呋喃,以聚苯乙烯換算)求出。
作為具有羥基之聚合物,可使用將羥基導入至任意適當之聚合物中獲得之聚合物。例如,可例舉將羥基導入至(甲基)丙烯酸系樹脂、乙烯基烷基醚系樹脂、聚矽氧系樹脂、聚酯系樹脂、聚醯胺系樹脂、聚胺基甲酸酯系樹脂、苯乙烯-二烯嵌段共聚物等樹脂之側鏈及/或末端而獲得之聚合物。較佳為使用將羥基導入至(甲基)丙烯酸系樹脂而獲得者。藉由使用(甲基)丙烯酸系樹脂,能夠獲得容易調整黏著劑層之儲存彈性模數及拉伸彈性模數,並且黏著力與剝離性之平衡優異的黏著劑組合物。進而,能夠減少來自黏著劑之成分導致之對被黏著體之污染。再者,「(甲基)丙烯酸」係指丙烯酸及/或甲基丙烯酸。
具有羥基之聚合物例如係藉由使以下之單體組合物聚合而獲得,上述單體組合物包含:具有任意適當之直鏈或支鏈烷基之丙烯酸或甲基丙烯酸之酯、以及具有羥基之單體。具有直鏈或支鏈烷基之丙烯酸或甲基丙烯酸之酯可僅使用1種,亦可組合2種以上使用。
直鏈或支鏈烷基較佳為碳數為30個以下之烷基,更佳為碳數為1~20個之烷基,進而較佳為碳數為4~18個之烷基。作為烷基,具體而言可例舉:甲基、乙基、丙基、異丙基、正丁基、第三丁基、異丁基、戊基、異戊基、己基、庚基、環己基、2-乙基己基、辛基、異辛基、壬基、異壬基、癸基、異癸基、十一烷基、月桂基、十三烷基、十四烷基、硬脂基、十八烷基、十二烷基等。
作為含羥基單體,可使用任意適當之單體。例如,可例舉:丙烯酸2-羥基甲酯、丙烯酸2-羥基乙酯、丙烯酸2-羥基丙酯、丙烯酸3-羥基丙酯、丙烯酸4-羥基丁酯、甲基丙烯酸2-羥基甲酯、甲基丙烯酸2-羥基乙酯、N-(2-羥基乙基)丙烯醯胺等。較佳為使用丙烯酸2-羥基甲酯、丙烯酸2-羥基乙酯、甲基丙烯酸2-羥基甲酯、甲基丙烯酸2-羥基乙酯。該等單體可僅使用1種,亦可組合2種以上使用。
相對於具有羥基之聚合物之聚合所使用之單體組合物之全部單體成分100莫耳%,含羥基單體較佳為10莫耳%~40莫耳%,更佳為10莫耳%~30莫耳%,進而較佳為15莫耳%~25莫耳%。藉由使包含含羥基單體之單體組合物聚合,能夠獲得具有羥基之聚合物。該羥基能夠成為源自式(1)所表示之單體之結構單元之導入點。例如,藉由使具有羥基之聚合物(預聚物)與式(1)所表示之單體反應,能夠獲得具有碳不飽和雙鍵之基礎聚合物。
以凝集力、耐熱性、交聯性之改質為目的,可根據需要進一步使用能夠與上述(甲基)丙烯酸烷基酯共聚之其他單體成分。作為此種單體成分,例如,可例舉:丙烯酸、甲基丙烯酸等含羧基單體;馬來酸酐、伊康酸酐等酸酐單體;苯乙烯磺酸、烯丙基磺酸等含磺酸基單體;(甲基)丙烯醯胺、N,N-二甲基(甲基)丙烯醯胺等(N-取代)醯胺系單體;(甲基)丙烯酸胺基乙酯等(甲基)丙烯酸胺基烷基酯系單體;(甲基)丙烯酸甲氧基乙酯等(甲基)丙烯酸烷氧基烷基酯系單體;N-環己基馬來醯亞胺、N-異丙基馬來醯亞胺等馬來醯亞胺系單體;N-甲基伊康醯亞胺、N-乙基伊康醯亞胺等伊康醯亞胺系單體;琥珀醯亞胺系單體;乙酸乙烯酯、丙酸乙烯酯、N-乙烯基吡咯啶酮、甲基乙烯基吡咯啶酮等乙烯系單體;丙烯腈、甲基丙烯腈等氰基丙烯酸酯單體;(甲基)丙烯酸縮水甘油酯等含環氧基之丙烯酸系單體;聚乙二醇(甲基)丙烯酸酯、聚丙二醇(甲基)丙烯酸酯等二醇系丙烯酸酯單體;(甲基)丙烯酸四氫糠酯、氟(甲基)丙烯酸酯、聚矽氧(甲基)丙烯酸酯等具有雜環、鹵素原子、矽原子等之丙烯酸酯系單體;異戊二烯、丁二烯、異丁烯等烯烴系單體;乙烯醚等乙烯醚系單體。該等單體成分可僅使用1種,亦可組合2種以上使用。
單體組合物中之能夠與(甲基)丙烯酸烷基酯共聚之其他單體成分之含有比率可設為任意適當之量。具體而言,能夠與(甲基)丙烯酸烷基酯共聚之其他單體成分係以(甲基)丙烯酸烷基酯、含羥基單體以及任意之能夠與(甲基)丙烯酸烷基酯共聚之其他單體成分之合計成為100莫耳%之方式使用。
可藉由任意適當之方法獲得具有羥基之聚合物。例如,可藉由使包含(甲基)丙烯酸烷基酯、含羥基單體及任意之能夠與(甲基)丙烯酸烷基酯共聚之其他單體成分的單體組合物藉由任意適當之聚合方法聚合而獲得。
如上所述,黏著劑組合物之基礎聚合物係藉由使上述包含具有羥基之聚合物與式(1)所表示之單體之單體組合物聚合而獲得的聚合物。藉由使具有羥基之聚合物之羥基與式(1)所表示之單體之異氰酸基反應,從而獲得導入有碳不飽和雙鍵之基礎聚合物。藉由使用該基礎聚合物,能夠提供具有優異之凹凸填埋性及黏著性,並且能夠防止剝離時對被黏著體之糊劑殘留的黏著劑組合物。
[化3]
(式中,n為1以上之整數)。
在式(1)中,n為1以上之整數,較佳為1~10,更佳為1~5。藉由使n為上述範圍,能夠提供進一步抑制糊劑殘留之黏著劑組合物。在一個實施方式中,式(1)所表示之單體係異氰酸2-(2-甲基丙烯醯氧基乙氧基)乙酯(式(1)中n為1之化合物)。式(1)所表示之單體可僅使用1種,亦可組合2種以上使用。
相對於具有羥基之聚合物之羥基之莫耳數,式(1)所表示之單體之加成量較佳為50莫耳%~95莫耳%,更佳為65莫耳%~90莫耳%,進而較佳為70莫耳%~85莫耳%。藉由使式(1)所表示之單體之加成量為上述範圍內,能夠藉由紫外線照射使黏著劑組合物硬化,能夠提供剝離性優異之黏著劑組合物。於式(1)所表示之單體之加成量超過95莫耳%之情形時,有與交聯劑之反應點減少從而無法得到充分之交聯效果之虞。
基礎聚合物可具有使用除式(1)所表示之單體以外之具有碳不飽和雙鍵之化合物而導入有碳不飽和雙鍵之部分。作為除式(1)所表示之單體以外之具有碳不飽和雙鍵之化合物,例如,可例舉:丙烯酸2-異氰酸基乙酯(異氰酸2-丙烯醯氧基乙酯)、甲基丙烯酸2-異氰酸基乙酯(異氰酸2-甲基丙烯醯氧基乙酯)、甲基丙烯醯基異氰酸酯、異氰酸1,1-(雙丙烯醯氧基甲基)乙酯及異氰酸間異丙烯基-α,α-二甲基苄酯。該等可僅使用1種,亦可組合2種以上使用。於亦一併使用除式(1)所表示之單體以外之具有碳不飽和雙鍵之化合物之情形時,係以式(1)所表示之單體及除式(1)所表示之單體以外之具有碳不飽和雙鍵之化合物之合計加成量成為95莫耳%以下之方式使用。
A2.光聚合起始劑
作為光聚合起始劑,可使用任意適當之起始劑。作為光聚合起始劑,例如,可例舉:2,4,6-三甲基苄基苯基亞膦酸乙酯、(2,4,6-三甲基苯甲醯基)-苯基膦氧化物等醯基膦氧化物系光起始劑;4-(2-羥基乙氧基)苯基(2-羥基-2-丙基)酮、α-羥基-α,α'-二甲基苯乙酮、2-甲基-2-羥基苯丙酮、1-羥基環己基苯基酮等α-酮醇系化合物;甲氧基苯乙酮、2,2-二甲氧基-2-苯基苯乙酮、2,2-二乙氧基苯乙酮、2-甲基-1-[4-(甲硫基)-苯基]-2-嗎啉基丙烷-1等苯乙酮系化合物;苯偶姻乙醚、苯偶姻異丙醚、大茴香偶姻甲醚等苯偶姻醚系化合物;苯偶醯二甲基縮酮等縮酮系化合物;2-萘磺醯氯等芳香族磺醯氯系化合物;1-苯酮-1,1-丙二酮-2-(o-乙氧基羰基)肟等光活性肟系化合物;二苯甲酮、苯甲醯基苯甲酸、3,3'-二甲基-4-甲氧基二苯甲酮等二苯甲酮系化合物;9-氧硫
、2-氯9-氧硫𠮿
、2-甲基9-氧硫𠮿
、2,4-二甲基9-氧硫𠮿
、異丙基9-氧硫𠮿
、2,4-二氯9-氧硫𠮿
、2,4-二乙基9-氧硫𠮿
、2,4-二異丙基9-氧硫𠮿
等9-氧硫𠮿
系化合物;樟腦醌;鹵代酮;醯基膦酸酯、2-羥基-1-(4-(4-(2-羥基-2-甲基丙醯基)苄基)苯基-2-甲基丙烷-1等α-羥基苯乙酮。較佳為可使用2,2-二甲氧基-2-苯基苯乙酮、2-羥基-1-(4-(4-(2-羥基-2-甲基丙醯基)苄基)苯基-2-甲基丙烷-1。光聚合起始劑可僅使用1種,亦可組合2種以上使用。
作為光聚合起始劑,亦可使用市售品。例如,可例舉IGM Resins公司製造之商品名:Omnirad 127D及Omnirad 651。
光聚合起始劑能夠以任意適當之量使用。相對於100重量份上述基礎聚合物,光聚合起始劑之含量較佳為0.5重量份~20重量份,更佳為0.5重量份~10重量份。當光聚合起始劑之含量未達0.5重量份之情形時,有在活性能量線照射時不會充分硬化之虞。當光聚合起始劑之含量超過20重量份之情形時,有黏著劑組合物之保存穩定性會降低之虞。
A-3.添加劑
黏著劑組合物可進一步包含任意適當之添加劑。作為添加劑,例如,可例舉:交聯劑、觸媒(例如,鉑觸媒)、黏著賦予劑、塑化劑、顏料、染料、填充劑、抗老化劑、導電材、紫外線吸收劑、光穩定劑、剝離調整劑、軟化劑、界面活性劑、阻燃劑、溶劑等。
在一個實施方式中,黏著劑組合物可進一步包含交聯劑。作為交聯劑,例如,可例舉:異氰酸酯系交聯劑、環氧系交聯劑、氮丙啶系交聯劑、螯合物系交聯劑等。交聯劑之含有比率可調整為任意適當之量。例如,當使用異氰酸酯系交聯劑之情形時,相對於100重量份基礎聚合物,較佳為0.01重量份~10重量份,更佳為0.1重量份~5重量份,進而較佳為3.0重量份~5.0重量份。藉由交聯劑之含有比率,能夠控制由黏著劑組合物形成之黏著劑層之柔軟性。當交聯劑之含量未達0.01重量份之情形時,有黏著劑組合物變成溶膠狀,而無法形成黏著劑層之虞。當交聯劑之含量超過10重量份之情形時,有對被黏著體之密接性會降低,而無法充分保護被黏著體之虞。
在一個實施方式中,較佳為使用異氰酸酯系交聯劑。異氰酸酯系交聯劑就能夠與多種官能基反應之方面而言較佳。特佳為使用具有3個以上異氰酸基之交聯劑。藉由使用異氰酸酯系交聯劑作為交聯劑且將交聯劑之含有比率設為上述範圍內,能夠形成即使在加熱後剝離性亦優異而糊劑殘留明顯少之黏著劑層。
B. 半導體加工用黏著帶
在本發明之一個實施方式中,提供一種半導體加工用黏著帶。半導體加工用黏著帶包括基材及由上述黏著劑組合物形成之黏著劑層。如上所述,上述黏著劑組合物具有優異之凹凸填埋性及黏著性,並且能夠防止剝離時對被黏著體之糊劑殘留。因此,藉由使用該黏著劑組合物形成黏著劑層,即使在半導體晶圓於表面具有凹凸之情形時,在貼附時亦具有優異之凹凸填埋性及黏著性,能夠在半導體加工步驟中適當地保護半導體晶圓之表面。如上所述,黏著劑組合物包含光聚合起始劑。因此,在剝離時藉由照射紫外線,能夠發揮優異之剝離性,並且即使在具有凸塊等凹凸之情形時,亦能夠防止對被黏著體表面之糊劑殘留。
在一個實施方式中,黏著帶較佳為在基材與黏著劑層之間具有中間層。藉由具有中間層,在被黏著體表面具有凹凸之情形時,能夠進一步提高凹凸填埋性。圖1係本發明之一個實施方式之黏著帶之概略剖視圖。圖示例之黏著帶100具備基材30、中間層20及黏著劑層10。黏著劑層10係由上述黏著劑組合物形成之層。
黏著帶之厚度可設定在任意適當之範圍內。較佳為10 μm~1,000 μm,更佳為50 μm~300 μm,進而較佳為100 μm~300 μm。
B-1.基材
基材可由任意適當之樹脂構成。作為構成基材之樹脂之具體例,可例舉:聚對苯二甲酸乙二酯(PET)、聚萘二甲酸乙二酯(PEN)、聚對苯二甲酸丁二酯(PBT)、聚萘二甲酸丁二酯(PBN)等聚酯系樹脂;乙烯-乙酸乙烯酯共聚物、乙烯-甲基丙烯酸甲酯共聚物、聚乙烯、聚丙烯、乙烯-丙烯共聚物等聚烯烴系樹脂;聚乙烯醇;聚偏二氯乙烯;聚氯乙烯;氯乙烯-乙酸乙烯酯共聚物;聚乙酸乙烯酯;聚醯胺;聚醯亞胺;纖維素類;氟系樹脂;聚醚;聚苯乙烯等聚苯乙烯系樹脂;聚碳酸酯;聚醚碸等。較佳為使用聚對苯二甲酸乙二酯、聚萘二甲酸乙二酯、聚對苯二甲酸丁二酯、聚萘二甲酸丁二酯。藉由使用該等樹脂,能夠進一步防止翹曲之發生。
在不損害本發明之效果之範圍內,基材可進一步包含其他成分。作為其他成分,例如可例舉:抗氧化劑、紫外線吸收劑、光穩定劑、耐熱穩定劑等。關於其他成分之種類及使用量,可根據目的以任意適當之量使用。
在一個實施方式中,基材具有抗靜電功能。藉由使基材具有抗靜電功能,能夠抑制在帶剝離時產生靜電,防止因靜電引起之電路之破壞及異物之附著。可藉由使基材由包含抗靜電劑之樹脂形成而具有抗靜電功能,亦可藉由將包含導電性高分子、有機或無機導電性物質及抗靜電劑等抗靜電成分之組合物塗佈至任意適當之膜,形成抗靜電層而具有抗靜電功能。當基材具有抗靜電層之情形時,較佳為在形成有抗靜電層之面積層中間層。
當基材具有抗靜電功能之情形時,基材之表面電阻值例如為1.0×10
2Ω/□~1.0×10
13Ω/□,較佳為1.0×10
6Ω/□~1.0×10
12Ω/□,更佳為1.0×10
7Ω/□~1.0×10
11Ω/□。藉由使表面電阻值為上述範圍內,能夠抑制在帶剝離時產生靜電,防止因靜電引起之電路之破壞及異物之附著。當使用具有抗靜電功能之基材作為基材之情形時,所獲得之黏著帶之表面電阻值例如可為1.0×10
6Ω/□~1.0×10
12Ω/□。
基材之厚度可設定為任意適當之值。基材之厚度較佳為10 μm~200 μm,更佳為20 μm~150 μm。
基材之彈性模數可設定為任意適當之值。基材在25℃下之彈性模數較佳為50 MPa~6000 MPa,更佳為70 MPa~5000 MPa。藉由使彈性模數為上述範圍內,能夠獲得可適度地追隨被黏著體表面之凹凸之黏著帶。
B-2. 黏著劑層
黏著劑層可由上述A項中記載之黏著劑組合物形成。如上所述,A項中記載之黏著劑組合物具有優異之凹凸填埋性及黏著性,並且能夠防止剝離時對被黏著體之糊劑殘留。因此,藉由使用該黏著劑組合物形成黏著劑層,即使在半導體晶圓於表面具有凹凸之情形時,在貼附時亦具有優異之凹凸填埋性及黏著性,能夠在半導體加工步驟中適當地保護半導體晶圓之表面。
黏著劑層之厚度可設定為任意適當之值。黏著劑層之厚度較佳為1 μm~10 μm,更佳為1 μm~6 μm。藉由使黏著劑層之厚度為上述範圍內,能夠發揮出對被黏著體之充分之黏著力。
當未照射紫外線時,黏著劑層之25℃下之剪切儲存彈性模數G'1較佳為0.175 MPa以上,更佳為0.2 MPa以上,進而較佳為0.23 MPa以上。藉由使25℃下之剪切儲存彈性模數G'1為上述範圍內,即使在被黏著體具有凹凸之情形時,亦能夠發揮出優異之凹凸填埋性。黏著劑層之25℃下之剪切儲存彈性模數G'1例如為0.80 MPa以下。於本說明書中,25℃下之剪切儲存彈性模數G'1係指使用利用黏著劑組合物形成厚度為1 mm之黏著劑層所獲得之樣品,藉由動態黏彈性測定裝置測定之值。
黏著劑層在紫外線照射後之25℃下之拉伸儲存彈性模數E'1較佳為300 MPa以下,更佳為200 MPa以下,進而較佳為180 MPa以下。藉由使紫外線照射後之25℃下之拉伸儲存彈性模數E'1為上述範圍內,在紫外線照射後能夠容易地從被黏著體剝離。黏著劑層在紫外線照射後之25℃下之拉伸儲存彈性模數E'1為50 MPa以上。於本說明中,紫外線照射後之25℃下之拉伸儲存彈性模數E'1係指以如下方式測得之值:製作使用黏著劑組合物形成厚度為1 mm之黏著劑層所獲得之樣品,對該黏著劑層以累計光量成為700 mJ/cm
2之方式照射紫外線,然後用動態黏彈性測定裝置進行測定。
黏著劑層在紫外線照射後之對矽黏著力較佳為0.15 N/20 mm以下,更佳為0.10 N/20 mm以下,進而較佳為0.08 N/20 mm以下。藉由使對矽黏著力為上述範圍內,在紫外線照射後能夠容易地從被黏著體剝離。紫外線照射後之對矽黏著力例如為0.01 N/20 mm以上。於本發明中,對矽黏著力係指使用形成有紫外線硬化型黏著劑層之黏著帶測定之對矽鏡面晶圓之黏著力。
黏著劑層可為一層,亦可為兩層以上。當黏著劑層為兩層以上之情形時,只要包括至少一層使用上述A項中記載之黏著劑組合物形成之黏著劑層即可。當黏著劑層為兩層以上之情形時,較佳為使用A項中記載之黏著劑組合物形成之黏著劑層形成在黏著帶之與被黏著體接觸之面。不由黏著劑組合物形成之黏著劑層可由任意適當之黏著劑組合物形成。該黏著劑組合物可為紫外線硬化型黏著劑,亦可為感壓性黏著劑。
B-3.中間層
中間層可由任意適當之材料形成。中間層例如可由丙烯酸系樹脂、聚乙烯系樹脂、乙烯-乙烯醇共聚物、乙烯乙酸乙烯酯系樹脂及乙烯甲基丙烯酸甲酯樹脂等樹脂或者黏著劑形成。
在一個實施方式中,中間層由包含(甲基)丙烯酸系聚合物之中間層形成組合物形成。(甲基)丙烯酸系聚合物較佳為包含源自(甲基)丙烯酸烷基酯之構成成分。作為(甲基)丙烯酸烷基酯,例如,可例舉:(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丙酯、(甲基)丙烯酸異丙酯、(甲基)丙烯酸正丁酯、(甲基)丙烯酸異丁酯、(甲基)丙烯酸第二丁酯、(甲基)丙烯酸戊酯、(甲基)丙烯酸異戊酯、(甲基)丙烯酸己酯、(甲基)丙烯酸庚酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸辛酯、(甲基)丙烯酸異辛酯、(甲基)丙烯酸壬酯、(甲基)丙烯酸異壬酯、(甲基)丙烯酸癸酯、(甲基)丙烯酸異癸酯、(甲基)丙烯酸十一烷基酯、(甲基)丙烯酸十二烷基酯、(甲基)丙烯酸十三烷基酯、(甲基)丙烯酸十四烷基酯、(甲基)丙烯酸十五烷基酯、(甲基)丙烯酸十六烷基酯、(甲基)丙烯酸十七烷基酯、(甲基)丙烯酸十八烷基酯、(甲基)丙烯酸十九烷基酯、(甲基)丙烯酸二十烷基酯等(甲基)丙烯酸C1-C20烷基酯。
以凝集力、耐熱性、交聯性等之目改質為目的,(甲基)丙烯酸系聚合物可根據需要包含對應於能夠與(甲基)丙烯酸烷基酯共聚之其他單體的結構單元。作為此種單體,例如,可例舉:丙烯酸、甲基丙烯酸等含羧基單體;馬來酸酐、伊康酸酐等酸酐單體;(甲基)丙烯酸羥基乙酯、(甲基)丙烯酸羥基丙酯等含羥基單體;苯乙烯磺酸、烯丙基磺酸等含磺酸基單體;(甲基)丙烯醯胺、N,N-二甲基(甲基)丙烯醯胺、丙烯醯基嗎啉等含氮單體;(甲基)丙烯酸胺基乙酯等(甲基)丙烯酸胺基烷基酯系單體;(甲基)丙烯酸甲氧基乙酯等(甲基)丙烯酸烷氧基烷基酯系單體;N-環己基馬來醯亞胺、N-異丙基馬來醯亞胺等馬來醯亞胺系單體;N-甲基伊康醯亞胺、N-乙基伊康醯亞胺等伊康醯亞胺系單體;琥珀醯亞胺系單體;乙酸乙烯酯、丙酸乙烯酯、N-乙烯基吡咯啶酮、甲基乙烯基吡咯啶酮等乙烯系單體;丙烯腈、甲基丙烯腈等氰基丙烯酸酯單體;(甲基)丙烯酸縮水甘油酯等含環氧基之丙烯酸系單體;聚乙二醇(甲基)丙烯酸酯、聚丙二醇(甲基)丙烯酸酯等二醇系丙烯酸酯單體;(甲基)丙烯酸四氫糠酯、氟(甲基)丙烯酸酯、聚矽氧(甲基)丙烯酸酯等具有雜環、鹵素原子、矽原子等之丙烯酸酯系單體;異戊二烯、丁二烯、異丁烯等烯烴系單體;乙烯醚等乙烯醚系單體。該等單體成分可僅使用1種,亦可組合2種以上使用。在100重量份丙烯酸系聚合物中,上述源自其他單體之結構單元之含有比率較佳為1重量份~30重量份,更佳為3重量份~25重量份。
上述(甲基)丙烯酸系聚合物之重量平均分子量較佳為20萬~100萬,更佳為30萬~80萬。重量平均分子量可藉由GPC(溶劑:THF)測定。
上述(甲基)丙烯酸系聚合物之玻璃轉移溫度較佳為-50℃~30℃,更佳為-40℃~20℃。若為此種範圍內,則能夠獲得耐熱性優異、能夠適良好用於加熱步驟之黏著帶。
在一個實施方式中,中間層包含光聚合起始劑並且不含紫外線硬化性成分。即,雖然包含光聚合起始劑,但中間層本身不會藉由紫外線照射而硬化。因此,中間層能夠在紫外線照射前後維持柔軟性。又,藉由使中間層包含光聚合起始劑,能夠抑制黏著劑層所包含之光聚合起始劑向中間層轉移,結果黏著劑層所包含之光聚合起始劑之含量經時減少。因此,在紫外線照射後,黏著帶能夠發揮優異之輕剝離性。於本說明書中,紫外線硬化性成分係指能夠藉由紫外線照射而交聯並硬化收縮之成分。具體而言,可例舉上述在側鏈或末端具有碳不飽和雙鍵之聚合物等。
中間層形成組合物(結果為形成之中間層)所包含之光聚合起始劑與上述黏著劑層所包含之光聚合起始劑可相同,亦可不同。較佳為中間層包含與黏著劑層相同之光聚合起始劑。藉由中間層與黏著劑層包含相同之光聚合起始劑,能夠進一步抑制光聚合起始劑從黏著劑層向中間層轉移。作為光聚合起始劑,可使用上述A項中例示之光聚合起始劑。光聚合起始劑可僅使用1種,亦可組合2種以上使用。
相對於中間層形成組合物中之聚合物構成成分100重量份,中間層中之光聚合起始劑之含量較佳為0.1重量份~10重量份,更佳為0.5重量份~8重量份。藉由使中間層所包含之光聚合起始劑之含量為上述範圍內,能夠獲得紫外線照射後具有優異之輕剝離性之黏著帶。在一個實施方式中,以與上述形成黏著劑層之組合物等量之方式使用光聚合起始劑。
在一個實施方式中,上述中間層形成組合物進一步包含交聯劑。作為交聯劑,例如,可例舉:異氰酸酯系交聯劑、環氧系交聯劑、㗁唑啉系交聯劑、氮丙啶系交聯劑、三聚氰胺系交聯劑、過氧化物系交聯劑、脲系交聯劑、金屬烷醇鹽系交聯劑、金屬螯合物系交聯劑、金屬鹽系交聯劑、碳二醯亞胺系交聯劑、胺系交聯劑等。
當中間層形成組合物包含交聯劑之情形時,相對於中間層形成組合物中之聚合物構成成分100重量份,交聯劑之含有比率較佳為0.01重量份~5重量份,更佳為0.05重量份~1.0重量份。
中間層形成組合物根據需要可進一步包含任意適當之添加劑。作為添加劑,例如,可例舉:活性能量線聚合促進劑、自由基捕捉劑、黏著賦予劑、塑化劑(例如,偏苯三甲酸酯系塑化劑、均苯四酸酯系塑化劑)、顏料、染料、填充劑、抗老化劑、導電材、抗靜電劑、紫外線吸收劑、光穩定劑、剝離調整劑、軟化劑、界面活性劑、阻燃劑、抗氧化劑等。
中間層之厚度較佳為10 μm~300 μm,更佳為50 μm~200 μm,進而較佳為50 μm~150 μm,特佳為100 μm~150 μm。藉由使中間層之厚度為上述範圍內,能夠獲得能夠良好地填埋凹凸面之黏著帶。
中間層在紫外線照射前之25℃下之剪切儲存彈性模數G'3較佳為0.3 MPa~10 MPa,更佳為0.4 MPa~1.5 MPa,進而較佳為0.5 MPa~1.0 MPa。又,中間層在紫外線照射前之80℃下之剪切儲存彈性模數G'4較佳為0.01 MPa~0.5 MPa,更佳為0.02 MPa~0.20 MPa,進而較佳為0.02 MPa~0.15 MPa,特佳為0.03 MPa~0.10 MPa。藉由使25℃下之剪切儲存彈性模數G'3及80℃下之剪切儲存彈性模數G'4為上述範圍內,能夠獲得能夠在貼附時及在背面研磨步驟中良好地填埋凹凸面之黏著帶。又,能夠提高黏著帶之被黏著體保持力。
C. 黏著帶之製造方法
黏著帶可藉由任意適當之方法製造。在一個實施方式中,可藉由在基材上形成黏著劑層來製作黏著帶。又,當黏著帶具有中間層之情形時,黏著帶例如可藉由在基材上形成中間層後,在該中間層上形成黏著劑層而製作。黏著劑層及中間層可將上述形成黏著劑層之組合物及上述形成中間層之組合物塗佈在基材或中間層而形成各層,亦可在任意適當之剝離襯墊上形成各層之後進行轉印。作為塗佈方法,可採用棒塗機塗佈、氣刀塗佈、凹版塗佈、凹版反轉塗佈、逆輥塗佈、模唇塗佈、模嘴塗佈、浸塗、膠版印刷、柔版印刷、網版印刷等各種方法。又,亦可採用另行在剝離襯墊形成黏著劑層或中間層後,將其貼附至基材之方法。
D.半導體加工用黏著帶之用途
本發明之實施方式之半導體加工用黏著帶能夠在半導體加工步驟之任意適當之步驟中使用。如上所述,本發明之實施方式之半導體加工用黏著帶具有優異之凹凸填埋性及黏著性,並且能夠防止剝離時對被黏著體之糊劑殘留。因此,藉由使用該黏著劑組合物形成黏著劑層,即使在半導體晶圓於表面具有凹凸之情形時,在貼附時亦具有優異之凹凸填埋性及黏著性,能夠在半導體加工步驟中適當地保護半導體晶圓之表面。如上所述,黏著劑組合物包含光聚合起始劑。因此,能夠在剝離時藉由照射紫外線而發揮優異之剝離性,並且即使在具有凸塊等凹凸之情形時,亦能夠防止對被黏著體表面之糊劑殘留。因此,能夠良好地用於需要優異之黏著力及優異之剝離力之用途。在一個實施方式中,本發明之實施方式之半導體加工用黏著帶可貼附至表面具有凹凸之被黏著體使用。在此種被黏著體中,進一步要求被黏著體表面之凹凸填埋性、及剝離時之糊劑殘留。即使為此種被黏著體,本發明之實施方式之半導體加工用黏著帶亦能夠在半導體加工步驟中良好地保持被黏著體。
在一個實施方式中,上述黏著帶能夠良好地用作背面研磨帶。上述黏著帶在紫外線照射後能夠發揮優異之輕剝離性。又,在紫外線照射後,無論被黏著體表面之結構如何,均能夠發揮優異之輕剝離性。因此,即使當被黏著體表面之結構複雜之情形時,亦能夠防止對被黏著體表面之糊劑殘留。因此,在背面研磨步驟後,能夠容易地從被黏著體剝離,亦能夠防止對被黏著體之糊劑殘留。
[實施例]
以下,藉由實施例具體說明本發明,但本發明不限於該等實施例。實施例中之試驗及評價方法如下所述。又,除非另有說明,否則「份」及「%」均為重量基準。
<製造例1>中間層形成組合物之製備
分別使用58.4莫耳丙烯酸丁酯、38.6莫耳甲基丙烯酸甲酯、3莫耳丙烯酸2-羥基乙酯(東亞合成公司製造,商品名:ACRYCS(註冊商標) HEA),將該等與相對於單體之總重量為0.3重量%之聚合起始劑(富士膠片和光純藥公司製造,商品名:V-50)及溶劑(水)混合,製備單體組合物(固形物成分濃度:25%)。將該單體組合物投入至1升圓底可分離燒瓶中配備有可分離蓋、分液漏斗、溫度計、氮氣導入管、李比希冷凝器、真空密封件、攪拌棒、攪拌葉片而獲得的聚合用實驗裝置,一邊攪拌,一邊在常溫下進行1小時氮氣置換。之後,在氮氣流入之下一邊攪拌,一邊在56℃下保持5小時,進行乳液聚合,繼而進行鹽析,獲得樹脂(中間層形成組合物用聚合物)。
將所得之聚合物溶解在乙酸乙酯中,相對於該溶液之固形物成分100重量份,混合0.1重量份多異氰酸酯化合物(商品名「CORONATE L」,Tosoh股份有限公司製造)及1重量份光聚合起始劑(IGM Resins公司製造,商品名:Omnirad 127D),製備包含乙酸乙酯之中間層形成組合物(固形物成分35%)。
<製造例2>黏著劑層形成組合物之製備
分別使用75莫耳丙烯酸丁酯、25莫耳甲基丙烯酸甲酯、20莫耳丙烯酸2-羥基乙酯(東亞合成公司製造,商品名:ACRYCS(註冊商標) HEA),將該等與相對於單體之總重量為0.3重量%之聚合起始劑(東京化成工業公司製造,商品名2,2'-偶氮二(異丁腈) (AIBN))及溶劑(乙酸乙酯)混合,製備單體組合物(固形物成分濃度:37.5%)。將該單體組合物投入至1升圓底可分離燒瓶中配備有可分離蓋、分液漏斗、溫度計、氮氣導入管、李比希冷凝器、真空密封件、攪拌棒、攪拌葉片而獲得的聚合用實驗裝置,一邊攪拌,一邊在常溫下進行6小時氮氣置換。之後,在氮氣流入之下一邊攪拌,一邊在65℃下保持6小時進行溶液聚合,獲得樹脂溶液(包含具有羥基之聚合物之聚合物溶液)。
以空氣充分進入上述得到之具有羥基之聚合物之溶液之方式進行攪拌之後,添加16莫耳式(1)所表示之單體(昭和電工公司製造,商品名「Karenz MOI-EG」)。進而,添加相對於式(1)所表示之單體之重量為0.05重量%之二月桂酸二丁基錫(IV)(和光純藥工業公司製造),並適當添加溶劑(乙酸乙酯),以固形物成分濃度成為31%之方式進行調整,並進行攪拌。之後,將該混合物在50℃下保管24小時,獲得聚合物溶液(黏著劑組合物1)。
相對於所得聚合物溶液之固形物成分100重量份,混合3.0重量份多異氰酸酯化合物(商品名「CORONATE L」,Tosoh股份有限公司製造)及1重量份光聚合起始劑(IGM Resins公司製造,商品名:Omnirad 127D),製備包含乙酸乙酯之黏著劑層形成組合物(固形物成分15%)。
[實施例1]
將製造例1中得到之中間層形成組合物塗佈於厚度為38 μm之聚酯系剝離襯墊(商品名「MRF」,三菱樹脂股份有限公司製造)之實施了聚矽氧處理之面,以120℃加熱120秒而脫溶劑,形成厚度為150 μm之中間層。繼而,將作為基材之厚度為50 μm之PET膜(商品名「LUMIRROR S105」,Toray公司製造)之ESAS處理面貼合至中間層表面。
另行將製造例2中得到之黏著劑層形成組合物塗佈於厚度為75 μm之聚酯系剝離襯墊之聚矽氧處理面,以120℃加熱120秒而脫溶劑,形成厚度為6 μm之黏著劑層。
繼而,將剝離襯墊從中間層剝離,將黏著劑層貼合並轉印至中間層,在50℃下保存72小時,獲得依序具備基材/中間層/黏著劑層之黏著帶。
[實施例2]
除了將式(1)所表示之單體(昭和電工公司製造,商品名「Karenz MOI-EG」)之添加量變更為14莫耳之外,以與實施例1相同之方式獲得黏著帶。
[實施例3]
除了將式(1)所表示之單體(昭和電工公司製造,商品名「Karenz MOI-EG」)之添加量變更為18莫耳、將光聚合起始劑之添加量設為2重量份之外,以與實施例1相同之方式獲得黏著帶。
(比較例1)
使用其他導入碳不飽和雙鍵之化合物(昭和電工公司製造,商品名「Karenz MOI」)代替式(1)所表示之單體(昭和電工公司製造,商品名「Karenz MOI-EG」),將光聚合起始劑之添加量設為1重量份,除此以外,以與實施例3相同之方式獲得黏著帶。
(比較例2)
混合75莫耳丙烯酸2-乙基己酯、25莫耳丙烯醯基嗎啉、22莫耳丙烯酸2-羥乙基酯(東亞合成公司製造,商品名:ACRYCS(註冊商標)HEA)、相對於單體之總重量為0.3重量%之聚合起始劑(日本油脂公司製造,商品名:NYPER(註冊商標)BW)及溶劑(乙酸乙酯),製備單體組合物(固形物成分濃度:40%)。將該單體組合物投入至1升圓底可分離燒瓶中配備有可分離蓋、分液漏斗、溫度計、氮氣導入管、李比希冷凝器、真空密封件、攪拌棒、攪拌葉片而獲得之聚合用實驗裝置,一邊攪拌,一邊在常溫下進行6小時氮氣置換。之後,在氮氣流入之下,一邊攪拌,一邊在60℃下保持8小時進行聚合,獲得樹脂溶液。於所得樹脂溶液中添加11莫耳其他導入碳不飽和雙鍵之化合物(昭和電工公司製造,商品名「Karenz MOI」)。進而,添加0.0633重量份二月桂酸二丁基錫(IV)(和光純藥工業公司製造),適當添加溶劑(甲苯),以固形物成分濃度成為15%之方式進行調整。之後,在空氣氣氛下,在50℃下攪拌24小時,獲得聚合物溶液(黏著劑組合物)。
除了使用所得黏著劑組合物、將光聚合起始劑之添加量設為5重量份以外,以與實施例1相同之方式製備黏著劑層形成組合物。除了使用該黏著劑層形成組合物之外,以與實施例1相同之方式獲得黏著帶。
(比較例3)
除了使用18莫耳其他導入碳不飽和雙鍵之化合物(昭和電工公司製造,商品名「Karenz MOI」)之外,以與比較例2相同之方式獲得聚合物溶液(黏著劑組合物)。
除了使用所得黏著劑組合物、將光聚合起始劑之添加量設為5重量份以外,以與實施例1相同之方式製備黏著劑層形成組合物。除了使用該黏著劑層形成組合物之外,以與實施例1相同之方式獲得黏著帶。
使用實施例及比較例中得到之黏著帶進行以下評價。將結果示於表1。
(1)黏著力
使用Si鏡面晶圓(信越化學製造)作為被黏著體,測定矽黏著力(Si黏著力)。使用藉由切割器切割成20 mm寬之黏著帶。藉由使2 kg輥往復一次,進行向晶圓之貼附。使用拉伸試驗機(TENSILON) (MinebeaMitsumi公司製造,製品名:TG-1kN),依據JIS Z 0237 (2000)進行測定。具體而言,在300 mm/min之拉伸速率、室溫及180°之剝離角下將帶剝離。紫外線照射係貼附黏著帶,在常溫下保管30分鐘,然後在測定黏著力前用高壓水銀燈進行UV照射(700 mJ/cm
2)來進行。在室溫23℃、相對濕度50%之環境下進行黏著帶之貼附及剝離。
(2)剪切儲存彈性模數
將各黏著劑層形成組合物以厚度成為1 mm之方式積層在剝離襯墊(厚度:38 μm,三菱樹脂公司製造,商品名:MRF),製成樣品。對該樣品藉由ARES流變儀(Waters公司製造)在升溫速度為5℃/min、頻率為1 Hz、測定溫度為0℃~100℃之條件下進行測定。
(3)拉伸儲存彈性模數
以與上述之剪切儲存彈性模數之評價相同之方式製作樣品。使用該樣品,藉由動態黏彈性測定裝置(製品名:RSA,TA Instruments公司製造),在升溫速度為5℃/min、頻率為1 Hz、測定溫度為0℃~100℃之條件下進行測定。再者,對將黏著劑層形成組合物積層後藉由高壓水銀燈進行了UV照射(700 mJ/cm
2)者進行測定。
(4)填埋性
將實施例及比較例中獲得之黏著帶(230 cm×400 cm)用帶貼附裝置(日東精機公司製造,製品名:DR-3000III)貼附至晶圓(8 英吋,凸塊高度:75 μm,直徑:90 μm,間距:200 μm)。在以下條件下進行貼附。
實施環境: 23℃、50%之相對濕度
輥壓力: 0.40 MPa
輥速度: 5 mm/秒
工作台溫度: 80℃
貼附後,用鐳射顯微鏡(放大倍率:100倍)觀察黏著帶與晶圓之貼附狀態。又,在黏著帶朝上之狀態下,從黏著帶側對黏著帶及晶圓進行拍攝,使用圖像分析軟體(Image J (免費軟體))進行圖像之二值化(8位灰度、亮度:0~255、閾值:114)。任意選擇5個凸塊,測量用於顯示1個凸塊之點數。將5個凸塊之平均點數為830以下者評價為○(良好),將平均點數超過830者評價為×(差)。再者,未貼附帶之狀態之僅凸塊之圖像為220點。當有帶之情形時,點數大於220。若平均點數為830以下,則表示帶之凹凸填埋性優異。
(5)糊劑殘留
將實施例及比較例中獲得之黏著帶(230 cm×400 cm)用帶貼附裝置(日東精機公司製造,製品名:DR-3000III)貼附至具有Cu柱及包含焊料之凸塊之晶圓(12英吋,凸塊高度:65 μm,直徑:60 μm,間距:150 μm)。在以下條件下進行貼附。
實施環境: 23℃、50%之相對濕度
輥壓力: 0.40 MPa
輥速度: 5 mm/秒
工作台溫度: 80℃
繼而,用高壓水銀燈進行UV照射(700 mJ/cm
2),並藉由剝離裝置(日東精機公司製造,商品名:RM300-NV4),在以下條件下剝離黏著帶。
剝離溫度:60℃
剝離速度:5 mm/秒
其後,用鐳射顯微鏡觀察黏著帶剝離後之晶圓,若凸塊上完全沒有糊劑殘留,則評價為◎(最佳),將雖然可確認到略微糊劑殘留但為可容許之範圍之情形評價為○(良),將凸塊上有糊劑殘留而無法使用之情形評價為×(不合格)。
[表1]
[產業上之可利用性]
本發明之實施方式之黏著劑組合物能夠良好地用於半導體加工用黏著帶。
10:黏著劑
20:中間層
30:基材
100:黏著帶
圖1係本發明之一個實施方式之黏著帶之概略剖視圖。
10:黏著劑
20:中間層
30:基材
100:黏著帶
Claims (10)
- 一種用於半導體加工用黏著帶之黏著劑組合物,其包含基礎聚合物、及光聚合起始劑,且 該基礎聚合物係藉由使包含具有羥基之聚合物與式(1)所表示之單體之單體組合物聚合而獲得的聚合物: [化1] (式中,n為1以上之整數)。
- 如請求項1之黏著劑組合物,其中相對於上述具有羥基之聚合物之羥基之莫耳數,式(1)所表示之單體之加成量為50莫耳%~95莫耳%。
- 如請求項1之黏著劑組合物,其中上述式(1)所表示之單體係異氰酸2-(2-甲基丙烯醯氧基乙氧基)乙酯。
- 如請求項1之黏著劑組合物,其中上述具有羥基之聚合物之聚合所使用的單體組合物中之含羥基單體之含有比率為10莫耳%~40莫耳%。
- 一種半導體加工用黏著帶,其具有:基材、及由如請求項1之黏著劑組合物形成之黏著劑層。
- 如請求項5之半導體加工用黏著帶,其用於背面研磨步驟。
- 如請求項5之半導體加工用黏著帶,其中當未照射紫外線時,上述黏著劑層之25℃下之剪切儲存彈性模數G'1為0.2 MPa以上。
- 如請求項5之半導體加工用黏著帶,其係貼附至具有凹凸之被黏著體使用。
- 如請求項5之半導體加工用黏著帶,其中上述黏著劑層在紫外線照射後之25℃下之拉伸儲存彈性模數E'1為200 MPa以下。
- 如請求項5之半導體加工用黏著帶,其中上述黏著劑層在紫外線照射後之對矽黏著力為0.15 N/20 mm以下。
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