TW202325881A - Thin film deposition machine - Google Patents

Abstract

The present invention is a thin film deposition machine, which includes a chamber, a substrate holder, a pumping ring and a diffusion unit, wherein the substrate holder is located in an accommodating space of the chamber. The chamber includes an air pumping channel arranged around the accommodating space, wherein the air pumping channel has a first, a second, and a third pumping areas. The first pumping area is connected to the third pumping area via the second pumping area, wherein the height of the third pumping area is greater than that of the first pumping area. The pumping ring includes a plurality of exhaust holes and an annular channel. The exhaust holes are located around the substrate holder. The gas in the containing space can be exhausted through the exhaust holes, the annular channel and the pumping channel in sequence, which is beneficial to form stable flow field on the substrate holder to improve the uniformity of film deposition on the substrate.

Description

Thin Film Deposition Machine

The invention relates to a film deposition machine platform, which is beneficial to forming a stable flow field on a wafer carried by a carrier plate and improving the uniformity of film deposition.

With the continuous advancement of integrated circuit technology, the current electronic products are developing towards the trend of light, thin, small, high performance, high reliability and intelligence. The miniaturization technology of transistors in electronic products is very important. With the reduction of the size of transistors, the current transmission time and energy consumption can be reduced, so as to achieve the purpose of fast calculation and energy saving. In today's miniaturized transistors, some key thin films are almost only a few atoms thick, and the atomic layer deposition process is one of the main technologies for developing these microstructures.

The atomic layer deposition process is a technology that coats substances layer by layer on the surface of a substrate in the form of single atoms. The main reactants of atomic layer deposition are two chemical substances, usually called precursors, and the two precursors are used according to Sequentially sent to the reaction space.

Specifically, the first precursor is delivered into the reaction space first, so that the first precursor is guided to the surface of the substrate, and the process of chemical adsorption is automatically terminated when the surface is saturated. The cleaning gas is delivered into the reaction space, and the gas in the reaction space is extracted to remove the residual first precursor in the reaction space. The second precursor is injected into the reaction space, so that the second precursor reacts with the first precursor chemically adsorbed on the surface of the substrate to form a desired film, and the reaction process is until the reaction of the first precursor adsorbed on the surface of the substrate is completed. Then inject cleaning gas into the reaction space to remove the residual second precursor in the reaction space. By repeating the above steps, a thin film can be formed on the substrate.

In practical applications, the uniform distribution of precursors in the reaction space and the temperature of the substrate will have a considerable impact on the uniformity of the atomic layer deposition film. For this reason, the major process equipment manufacturers do their best to improve the diffusion mechanism. To improve the quality of the atomic layer deposition process.

As mentioned in the prior art, conventional thin film deposition machines often cannot distribute the precursors uniformly on the substrate, which affects the quality of the thin film deposited on the substrate surface. Therefore, the present invention proposes a novel thin film deposition machine, which can form a uniform and stable flow field above the substrate and the carrier plate, so as to facilitate the formation of a thin film with uniform thickness on the surface of the substrate.

An object of the present invention is to provide a thin film deposition machine, which mainly includes a cavity, a carrier plate, an air extraction ring and a diffusion unit, wherein the cavity includes an accommodating space and an air extraction channel. The air extraction channel is an annular body and is arranged around the periphery of the accommodating space. The suction ring includes a plurality of exhaust holes and an annular channel, wherein the exhaust holes are connected to the annular channel, so that the accommodating space is sequentially connected to the air extraction channel through the exhaust holes and the annular channel.

A plurality of exhaust holes can be evenly distributed around the carrier plate, and the air extraction channel includes a first air extraction area, a second air extraction area and a third air extraction area, wherein the height of the third air extraction area is greater than The first air extraction area is connected to the first air extraction area via the second air extraction area. The height of the second pumping area gradually increases from the first pumping area to the third pumping area, which is beneficial to transfer the gas in the first pumping area to the third pumping area via the second pumping area.

Through the special design of the air extraction channel and the air extraction ring in the present invention, it is beneficial to discharge the gas in the accommodating space of the cavity, and form a uniform and stable flow field on the substrate carried by the carrier plate, so that the A film of uniform thickness is deposited on the surface.

An object of the present invention is to provide a thin film deposition machine, wherein the annular channel of the air extraction ring is connected to the air extraction channel through a plurality of connection holes, and the exhaust holes and/or connections can be adjusted according to the structure of the air extraction channel of the cavity. The set density or pore size of the holes.

Specifically, the arrangement density or aperture of the exhaust holes and/or connection holes located above the first air extraction area may be greater than the arrangement density or aperture of the exhaust holes and/or connection holes located above the third air extraction area, The arrangement density or diameter of the exhaust holes and/or connection holes located above the second air pumping area is between the two. Through the above-mentioned design, the gas or precursor in the accommodation space will diffuse on the upper surface of the wafer, roughly along the radial direction of the carrier plate, to the exhaust holes around the carrier surface, so as to form a uniform and stable flow field.

In order to achieve the above object, the present invention proposes a thin film deposition machine, comprising: a cavity, including an accommodating space and an air extraction channel, the air extraction channel is located at the periphery of the accommodating space, wherein the air extraction channel includes a first air extraction channel Gas area, a second air extraction area and a third air extraction area, wherein a first height of the first air extraction area is less than a third height of the third air extraction area, and the second air extraction area is located at the first extraction area Between the gas area and the third air extraction area, a second height of the second air extraction area gradually increases from the first air extraction area toward the third air extraction area; a carrier plate is located in the accommodation space and includes A carrying surface is used to carry at least one wafer; a pumping ring, including: an annular outer wall; an annular inner wall, located on the inner side of the annular outer wall, and located around the carrier tray, wherein the annular outer wall and the annular inner wall There is an annular channel between them, which is fluidly connected to the suction channel of the cavity; a plurality of exhaust holes are arranged on the annular inner wall, and are fluidly connected to the annular channel and the accommodation space, wherein a plurality of exhaust holes are arranged around the carrier plate Around the bearing surface; and a diffusion unit, including: a diffusion surface facing the bearing surface of the bearing plate; a plurality of air inlets arranged on the diffusion surface and fluidly connected to the accommodating space of the cavity.

The thin film deposition machine includes a suction motor connected to the third pumping area of the pumping channel, and the cavity includes a wafer inlet and outlet connected to the accommodation space, and the wafer inlet and outlet are located in the first pumping area below.

Said thin film deposition machine, wherein the suction ring includes one or more connection holes, and the annular passage of the suction ring is connected to the suction passage of the cavity through the connection holes.

In the thin film deposition machine, the arrangement density or aperture of the connecting holes above the first pumping area is greater than the arrangement density or aperture of the connecting holes on the third pumping area.

In the thin film deposition machine, the plurality of exhaust holes of the suction ring are higher than the carrying surface of the carrying plate.

The thin film deposition machine includes a transmission pipeline fluidly connected to the diffusion unit, the transmission pipeline includes a transmission space and a diversion unit, wherein the diversion unit is arranged in the transmission space of the transmission pipeline, and should be divided into a first A transmission space and a second transmission space, the second transmission space is connected to the diffusion unit, wherein the flow guide unit includes a plurality of perforations, and is connected to the first transmission space and the second transmission space.

The thin film deposition machine includes a raised portion arranged on a surface of the flow guide unit connected to the first transmission space, and perforations are arranged around the raised portion and connected to the first transfer space relative to the flow guide unit surface slope.

Said film deposition machine, wherein the suction ring includes a first annular slope located inside the annular outer wall, inclined relative to an axis of the carrier plate, and facing the diffusion unit, and the diffusion unit includes a second annular slope surrounding it Around the diffusion surface, the inclination angles of the first annular slope and the second annular slope are the same, and are used to align the diffusion unit and the suction ring.

In the thin film deposition machine, the arrangement density or aperture of the exhaust holes above the first pumping area is greater than the arrangement density or aperture of the exhaust holes above the third pumping area.

In the thin film deposition machine, the second pumping area includes at least one inclined surface or an arc surface, connecting the bottom of the first pumping area and the third pumping area.

Please refer to FIG. 1 and FIG. 2 , which are respectively a schematic cross-sectional view and a schematic three-dimensional cross-sectional view of an embodiment of the thin film deposition machine of the present invention. As shown in the figure, the thin film deposition machine 10 mainly includes a cavity 11, a carrier plate 13, an air extraction ring 15 and a diffusion unit 17, wherein the cavity 11 includes an accommodating space 112 and an air extraction channel 12, The suction channel 12 is located on the periphery of the accommodation space 112 . The carrying tray 13 is located in the containing space 112 and includes a carrying surface 131 for carrying at least one wafer 14 .

In an embodiment of the present invention, the accommodating space 112 of the cavity 11 is approximately a cylinder, and the air extraction channel 12 is annular or tubular, and is arranged around the outer side of the accommodating space 112 . In another embodiment of the present invention, the accommodating space 112 may be a polygonal body, and the suction channel 12 may be a polygonal tubular body.

As shown in Figures 3 and 4, the air extraction channel 12 includes a first air extraction area 121, a second air extraction area 123 and a third air extraction area 125, wherein the first air extraction area 121 has a first height The partial annular channel of H1, the second air extraction area 123 is a partial annular channel with a second height H2, and the third air extraction area 125 is a partial annular channel with a third height H3. The first air extraction area 121 is connected to the third air extraction area 125 via the second air extraction area 123 to form an annular air extraction channel 12 .

The first height H1 of the first air extraction area 121 is less than the third height H3 of the third air extraction area 125, and the second height H2 of the second air extraction area 123 is from the first air extraction area 121 toward the third air extraction area. 125 directions gradually increase. Specifically, the second air extraction area 123 may include an inclined surface 1231 or an arc surface 1233 , wherein the inclined surface 1231 or the arc surface 1233 connects the bottoms of the first air extraction area 121 and the third air extraction area 125 .

As shown in Figure 1, the diffusion unit 17 includes a diffusion surface 171 and a plurality of air inlets 172, wherein when the diffusion unit 17 is connected to the cavity 11, the diffusion surface 171 and the air inlets 172 arranged on the diffusion surface 171 will face the carrier plate 13 and/or the wafer 14. The air inlet 172 of the diffusion unit 17 is fluidly connected to the accommodating space 112 and is used for delivering the gas or precursor to the upper side of the substrate 14 .

Please refer to Fig. 5, the air pumping ring 15 is an annular body, and includes an annular outer wall 151 and an annular inner wall 153, wherein the annular inner wall 153 is located at the radial inner side of the annular outer wall 151, and on the annular outer wall 151 An annular passage 152 is formed between the annular inner wall 153 and the annular outer wall 151. For example, the annular outer wall 151 can be a larger cylinder, and the annular inner wall 153 can be a smaller cylinder.

The annular inner wall 153 is arranged around the bearing surface 131 of the carrier plate 13, and a plurality of exhaust holes 154 are arranged on the annular inner wall 153, wherein the exhaust holes 154 are fluidly connected to the annular channel 152 and the accommodation space 112 of the cavity 11 . Specifically, when the wafer 14 on the susceptor 13 is deposited, the exhaust hole 154 is disposed around the carrying surface 131 of the susceptor 13 and/or around the wafer 14 .

As shown in FIG. 1 , the gas or precursor delivered to the accommodation space 112 by the diffusion unit 17 will be discharged from the accommodation space 112 through the exhaust hole 154 of the pumping ring 15, wherein the gas or precursor will be on the surface of the carrier plate 13. The carrying surface 131 and/or the upper surface of the wafer 14 roughly diffuses along the radial direction of the carrying plate 13 to the exhaust holes 154 around the carrying surface 131 . In this way, a uniform and stable flow field can be formed on the carrying surface 131 of the carrying plate 13 and/or the surface of the wafer 14, and it is beneficial to deposit a thin film with uniform thickness on the surface of the wafer 14, for example, during the deposition process, the The air holes 154 may be higher than the carrying surface 131 of the carrying tray 13 , or approximately at a height similar to the top surface of the wafer 14 .

As shown in Figure 5, the air extraction ring 15 is located between the diffusion unit 17 and the cavity 11. In an embodiment of the present invention, the air extraction ring 15 may include a first annular slope 155, wherein the first annular slope 155 Located on the inner side of the annular outer wall 151 , it is inclined relative to the axis of the annular inner wall 153 and/or the supporting plate 13 , and faces the diffuser unit 17 . The diffusion unit 17 may include a second annular slope 173 , wherein the second annular slope 173 is disposed around the diffusion surface 171 . The first annular inclined surface 155 and the second annular inclined surface 173 have the same inclination angle, which can be used to align the diffuser unit 17 and the air extraction ring 15 , and can improve the bonding tightness of the diffusion unit 17 and the air extraction ring 15 .

In addition, the suction ring 15 may also include one or more connection holes 156 , for example, the connection holes 156 may be disposed at the bottom 157 of the suction ring 15 and fluidly connected to the annular channel 152 . When the suction ring 15 is arranged in the cavity 11, the connection hole 156 at the bottom 157 of the suction ring 15 will be aligned with the suction channel 12, so that the suction channel 12 of the cavity 11 is connected to the suction ring 15 through the connection hole 156 The annular channel 152. The connection hole 156 can be a plurality of through holes, or a circular or partially circular through hole.

In an embodiment of the present invention, a plurality of exhaust holes 154 can be evenly distributed on the annular inner wall 153 of the air extraction ring 15 , and a plurality of connecting holes 156 can be evenly distributed on the bottom 157 of the air extraction ring 15 .

As shown in Figures 2 and 5, in another embodiment of the present invention, the area or arrangement density of the exhaust holes 154 and/or connecting holes 156 can be adjusted according to the structure of the air extraction channel 12 of the cavity 11 to change the load capacity. The flow field of the carrying surface 131 of the disc 13 and/or the upper surface of the wafer 14 . For example, the arrangement density or diameter of the exhaust holes 154 and/or connecting holes 156 above the first pumping area 121 can be greater than the setting density of the exhaust holes 154 and/or connecting holes 156 above the third pumping area 125 or aperture, and the setting density or aperture of the exhaust holes 154 and/or connecting holes 156 above the second pumping area 123 are in between, for example, the exhaust holes 154 and the connecting holes 156 above the second pumping area 123 /or the arrangement density of the connecting holes 156 may decrease from the first air extraction area 121 toward the third air extraction area 125 . Specifically, the spacing between the adjacent exhaust holes 154 and/or connecting holes 156 above the first air extraction area 121 will be smaller than the adjacent air exhaust holes 154 and/or adjacent upper third air extraction area 125. The spacing between the connection holes 156 . Of course, the adjustment of the arrangement density or diameter of the vent holes 154 and/or the connection holes 156 is only an embodiment of the present invention, and is not a limitation of the scope of the present invention.

Through the special design of the air pumping channel 12 in the present invention, not only is it beneficial to form a uniform gas field on the surface of the wafer 14, but also it is convenient to configure the pipeline of the thin film deposition machine 10. Specifically, the suction motor 16 can be fluidly connected to the suction channel 12 through the third suction area 125 , and the wafer inlet and outlet 111 is disposed below the first suction area 121 and connected to the accommodating space 112 .

As shown in FIG. 1 , the diffusion unit 17 is fluidly connected to a transfer line 19, wherein the transfer line 19 is used to deliver the gas or precursor to the diffusion unit 17, and deliver it to the chamber 11 through the gas inlet 172 of the diffusion unit 17. Set space 112.

As shown in FIG. 6 , the transmission pipeline 19 includes a transmission space 192 for transporting gas, and a flow guiding unit 191 may be disposed in the transmission space 192 . The diversion unit 191 can divide the transmission space 192 into a first transmission space 1921 and a second transmission space 1923 , wherein the second transmission space 1923 is connected to the diffusion unit 17 . The flow guide unit 191 includes a plurality of perforations 1912 connecting the first transmission space 1921 and the second transmission space 1923 .

In addition, the flow guide unit 191 may include a raised portion 1911, wherein the raised portion 1911 is arranged on a surface of the flow guide unit 191 connected to the first transmission space 1921, and the perforation 1912 is arranged around the raised portion 1911, opposite to The surface connecting the first transmission space 1921 and the second transmission space 1932 in the flow guiding unit 191 is inclined.

In actual application, the gas or plasma can be transported to the first transmission space 1921 of the transmission pipeline 19 , the gas or plasma will rotate in the first transmission space 1921 around the raised part 1911 , and pass through the flow guiding unit 191 The plurality of through holes 1912 are delivered to the second transmission space 1923 , so that the gas or plasma in the second transmission space 1923 forms a vortex with the axis of the transmission pipeline 19 as the rotation center.

The above is only one of the preferred embodiments of the present invention, and is not used to limit the scope of the present invention, that is, all changes and equal changes made according to the shape, structure, characteristics and spirit described in the patent scope of the present invention Modifications should be included in the patent application scope of the present invention.

10: Thin film deposition machine 11: Cavity 111:Wafer import and export 112:Accommodating space 12: Air extraction channel 121: The first pumping area 123: The second pumping area 1231: Inclined surface 1233: curved surface 125: The third pumping area 13: carrying plate 131: bearing surface 14:Wafer 15: suction ring 151: Circular outer wall 152: Ring channel 153: Circular inner wall 154: exhaust hole 155: the first circular slope 156: connection hole 157: bottom 16: Air extraction motor 17: Diffusion unit 171: Diffusion surface 172: air intake 173: the second annular slope 19: Transmission pipeline 191: diversion unit 1911: Raised part 1912: Perforation 192: Transmission space 1921: First transmission space 1923: Second Transmission Space H1: first height H2: second height H3: third height

[ FIG. 1 ] is a schematic cross-sectional view of an embodiment of a thin film deposition apparatus of the present invention.

[ FIG. 2 ] is a perspective cross-sectional schematic view of an embodiment of the thin film deposition machine of the present invention.

[ FIG. 3 ] is a three-dimensional exploded schematic view of an embodiment of the thin film deposition machine of the present invention.

[ FIG. 4 ] is a top view of an embodiment of the cavity of the thin film deposition machine of the present invention and a perspective view of an embodiment of the suction channel of the cavity.

[ Fig. 5 ] is an exploded cross-sectional schematic diagram of an embodiment of the thin film deposition machine of the present invention.

[ FIG. 6 ] is a three-dimensional cross-sectional schematic view of an embodiment of the transmission pipeline of the thin film deposition machine of the present invention.

10: Thin film deposition machine

11: Cavity

111:Wafer import and export

112:Accommodating space

121: The first pumping area

125: The third pumping area

13: carrying plate

131: bearing surface

15: suction ring

152: Ring channel

154: exhaust hole

156: connection hole

16: Air extraction motor

Claims (10)

A thin film deposition machine, comprising: A cavity, including an accommodating space and an air extraction channel, the air extraction channel is located on the periphery of the accommodating space, wherein the air extraction channel includes a first air extraction area, a second air extraction area and a third air extraction area Gas zone, wherein a first height of the first gas extraction zone is less than a third height of the third gas extraction zone, and the second gas extraction zone is located between the first gas extraction zone and the third gas extraction zone During the interval, a second height of the second air extraction area gradually increases from the first air extraction area toward the third air extraction area; a carrying tray, located in the accommodating space, and including a carrying surface for carrying at least one wafer; A pumping ring, comprising: a circular outer wall; An annular inner wall, located on the inner side of the annular outer wall, and located around the bearing plate, wherein there is an annular channel between the annular outer wall and the annular inner wall, fluidly connected to the air extraction channel of the cavity; A plurality of exhaust holes are arranged on the annular inner wall and fluidly connect the annular channel and the accommodating space, wherein the plurality of exhaust holes are arranged around the bearing surface of the bearing tray; and A diffusion unit, comprising: a diffusion surface facing the carrying surface of the carrying tray; A plurality of air inlets are arranged on the diffusing surface and are fluidly connected to the accommodating space of the cavity. The thin film deposition machine as described in claim 1 includes a suction motor connected to the third pumping area of the pumping channel, and the cavity includes a wafer inlet and outlet connected to the accommodation space, the wafer The circular inlet and outlet are located below the first air pumping area. The thin film deposition machine as claimed in claim 1, wherein the suction ring includes one or more connection holes, and the annular passage of the suction ring is connected to the suction passage of the cavity through the connection holes. The thin film deposition machine as claimed in claim 3, wherein the arrangement density or aperture of the connecting holes above the first pumping area is greater than the arrangement density or aperture of the connecting holes on the third pumping area. The thin film deposition machine as claimed in claim 1, wherein the plurality of exhaust holes of the suction ring are higher than the carrying surface of the carrying plate. The thin film deposition machine as claimed in claim 1, comprising a transfer line fluidly connected to the diffusion unit, the transfer line includes a transfer space and a flow guide unit, wherein the flow guide unit is arranged in the transfer space of the transfer line, And the transmission space should be divided into a first transmission space and a second transmission space, the second transmission space is connected to the diffusion unit, wherein the diversion unit includes a plurality of perforations, connecting the first transmission space and the second transmission space . The thin film deposition machine as claimed in claim 6, comprising a raised portion disposed on a surface of the flow guide unit connected to the first transmission space, and the perforation is arranged around the raised portion, and is opposite to The surface of the flow guide unit connected to the first transmission space is inclined. The thin film deposition machine as claimed in claim 1, wherein the suction ring includes a first annular slope located inside the annular outer wall, inclined relative to an axis of the carrier plate, and facing the diffusion unit, the diffusion The unit includes a second annular bevel arranged around the diffuser surface, wherein the inclination angles of the first and second annular bevels are the same, and are used to align the diffuser unit and the suction ring. The thin film deposition machine as claimed in claim 1, wherein the arrangement density or aperture of the exhaust holes above the first pumping area is greater than the arrangement density or aperture of the exhaust holes above the third pumping area. The thin film deposition machine as claimed in claim 1, wherein the second pumping area includes at least one inclined surface or an arc surface, connecting a bottom of the first pumping area and the third pumping area.

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