TW202325891A - Thin film deposition machine with pumping ring - Google Patents
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本發明有關於一種具有環形抽氣單元的薄膜沉積機台,有利於在承載盤承載的晶圓上形成穩定的流場,並提高薄膜沉積的品質。The invention relates to a film deposition machine with an annular air pumping unit, which is conducive to forming a stable flow field on a wafer carried by a carrier plate and improving the quality of film deposition.
隨著積體電路技術的不斷進步,目前電子產品朝向輕薄短小、高性能、高可靠性與智能化的趨勢發展。電子產品中電晶體的微縮技術至關重要,隨著電晶體的尺寸縮小,可減少電流傳輸時間及降低耗能,以達到快速運算及節能的目的。在現今微小化的電晶體中,部分關鍵的薄膜幾乎僅有幾個原子的厚度,而原子層沉積製程則是發展這些微量結構的主要技術之一。With the continuous advancement of integrated circuit technology, the current electronic products are developing towards the trend of light, thin, small, high performance, high reliability and intelligence. The miniaturization technology of transistors in electronic products is very important. With the reduction of the size of transistors, the current transmission time and energy consumption can be reduced, so as to achieve the purpose of fast calculation and energy saving. In today's miniaturized transistors, some key thin films are almost only a few atoms thick, and the atomic layer deposition process is one of the main technologies for developing these microstructures.
原子層沉積製程是一種將物質以單原子的形式一層一層地鍍於晶圓表面的技術,原子層沉積的主要反應物有兩種化學物質,通常被稱作前驅物,並將兩種前驅物依序傳送至反應空間內。The atomic layer deposition process is a technology that coats substances layer by layer in the form of single atoms on the surface of the wafer. The main reactants of atomic layer deposition are two chemical substances, usually called precursors, and the two precursors Sequentially sent to the reaction space.
具體而言,先將第一前驅物輸送至反應空間內,使得第一前驅物被導引至晶圓表面,化學吸附的過程直至表面飽和時就自動終止。將清潔氣體輸送至反應空間內,並抽出反應空間內的氣體,以去除反應空間內殘餘的第一前驅物。將第二前驅物注入反應空間,使得第二前驅物與化學吸附於晶圓表面的第一前驅物反應生成所需薄膜,反應的過程直至吸附於晶圓表面的第一前驅物反應完成為止。之後再將清潔氣體注入反應空間,以去除反應空間內殘餘的第二前驅物。透過上述步驟的反覆進行,並可在晶圓上形成薄膜。Specifically, the first precursor is delivered to the reaction space first, so that the first precursor is guided to the surface of the wafer, and the chemical adsorption process is automatically terminated when the surface is saturated. The cleaning gas is delivered into the reaction space, and the gas in the reaction space is extracted to remove the residual first precursor in the reaction space. The second precursor is injected into the reaction space, so that the second precursor reacts with the first precursor chemically adsorbed on the surface of the wafer to form a desired film, and the reaction process is until the reaction of the first precursor adsorbed on the surface of the wafer is completed. Then inject cleaning gas into the reaction space to remove the residual second precursor in the reaction space. By repeating the above steps, a thin film can be formed on the wafer.
在實際應用時,反應空間內前驅物的均勻分布,以及晶圓的溫度都會對原子層沉積的薄膜均勻度造成相當大的影響,為此各大製程設備廠莫不極盡所能的改善擴散機構,以提高原子層沉積製程的品質。In practical applications, the uniform distribution of precursors in the reaction space and the temperature of the wafer will have a considerable impact on the uniformity of the atomic layer deposition film. For this reason, the major process equipment manufacturers are doing their best to improve the diffusion mechanism. , to improve the quality of the atomic layer deposition process.
如先前技術所述,如何使得前驅物均勻的分布在晶圓上,以提高沉積在晶圓表面的薄膜品質,是目前業界努力的方向。本發明提出一種新穎的具有環形抽氣單元的薄膜沉積機台,可以在晶圓及承載盤的上方形成均勻且穩定的流場,以提高沉積在晶圓表面的薄膜品質。As mentioned in the previous technology, how to make the precursors evenly distributed on the wafer to improve the quality of the film deposited on the wafer surface is the current direction of the industry's efforts. The present invention proposes a novel film deposition machine with an annular air pumping unit, which can form a uniform and stable flow field above the wafer and the carrier plate, so as to improve the quality of the film deposited on the surface of the wafer.
本發明的一目的,在於提出一種具有環形抽氣單元的薄膜沉積機台,主要包括一腔體、一承載盤、一環形抽氣單元及一進氣單元,其中腔體包括一容置空間及一溝槽。溝槽為環狀體,並環繞設置在容置空間的外圍。An object of the present invention is to provide a thin film deposition machine with an annular air extraction unit, which mainly includes a cavity, a carrier plate, an annular air extraction unit and an air intake unit, wherein the cavity includes an accommodating space and a groove. The groove is an annular body and is arranged around the periphery of the accommodating space.
環形抽氣單元包括一環形主體及一環形蓋體,其中環形主體包括一環形凹槽、至少一連接孔及複數個排氣孔,排氣孔設置在環形主體的內側面,而連接孔則設置在環形主體的底面。環形蓋體用以覆蓋環形主體的環形凹槽,使得環形凹槽形成一環形通道。The annular air extraction unit includes an annular main body and an annular cover, wherein the annular main body includes an annular groove, at least one connecting hole and a plurality of exhaust holes, the exhaust holes are arranged on the inner surface of the annular main body, and the connecting holes are arranged On the bottom face of the ring body. The annular cover is used to cover the annular groove of the annular main body, so that the annular groove forms an annular channel.
在進行沉積的過程中,環形抽氣單元的排氣孔會位於承載盤的承載面及/或晶圓的周圍,並沿著承載盤的徑向將氣體經由排氣孔抽出容置空間,以在承載盤的承載面及/或晶圓的上表面成均勻的流場。During the deposition process, the exhaust hole of the annular air pumping unit will be located on the carrying surface of the carrier plate and/or around the wafer, and the gas will be drawn out of the accommodating space through the exhaust hole along the radial direction of the carrier plate, so as to A uniform flow field is formed on the carrying surface of the carrying plate and/or the upper surface of the wafer.
本發明的一目的,在於提出一種環形抽氣單元,主要包括一環形主體、一環形蓋板及一環形遮擋件,其中環形主體具有一環形凹槽。環形遮擋件位於環形凹槽內,而環形蓋板則覆蓋環形凹槽,使得環形凹槽形成一環形通道,其中環形遮擋件會位於環形通道內。An object of the present invention is to provide an annular air extraction unit, which mainly includes an annular main body, an annular cover plate and an annular shielding member, wherein the annular main body has an annular groove. The annular blocking part is located in the annular groove, and the annular cover plate covers the annular groove, so that the annular groove forms an annular channel, wherein the annular blocking part is located in the annular channel.
環形遮擋件連接一驅動桿,並透過驅動桿帶動環形遮擋件相對於環形主體位移,以改變環形主體上被環形遮擋件遮擋的連接孔的面積,並調整環形抽氣單元抽出容置空間內的氣體流量。The annular shutter is connected with a driving rod, and through the driving rod, the annular shutter is driven to displace relative to the annular main body, so as to change the area of the connection hole on the annular main body covered by the annular shutter, and adjust the amount of air pumping out of the accommodating space by the annular air extraction unit. gas flow.
為了達到上述的目的,本發明提出一種具有環形抽氣單元的薄膜沉積機台,包括:一腔體,包括一容置空間及一溝槽,其中該溝槽位於該容置空間的外圍;一環形抽氣單元,包括:一環形主體,包括一環形凹槽、至少一連接孔及複數個排氣孔,其中該環形主體用以覆蓋該腔體的該溝槽;一環形蓋板,覆蓋該環形主體的該環形凹槽,使得該環形凹槽形成一環形通道,其中該環形通道經由該連接孔連接該溝槽,並經由該排氣孔連接該腔體的該容置空間;一環形遮擋件,位於該環形通道內,該環形遮擋件包括一從動嚙合單元,其中該從動嚙合單元連接一驅動桿的一主動嚙合單元,該驅動桿轉動時會帶動該環形遮擋件相對於該環形主體轉動,以調整該環形主體的該連接孔被該環形遮擋件所遮擋的面積;一承載盤,位於該容置空間內,並包括一承載面用以承載至少一晶圓,其中該環形主體的該排氣孔位於該承載盤的該承載面周圍;及一進氣單元,包括複數個進氣孔,其中該進氣孔朝向該承載盤的該承載面,並流體連接該腔體的該容置空間。In order to achieve the above object, the present invention proposes a thin film deposition machine with an annular air pumping unit, comprising: a cavity, including an accommodating space and a groove, wherein the groove is located at the periphery of the accommodating space; Shaped air extraction unit, comprising: an annular main body, including an annular groove, at least one connecting hole and a plurality of exhaust holes, wherein the annular main body is used to cover the groove of the cavity; an annular cover plate, covering the The annular groove of the annular main body makes the annular groove form an annular channel, wherein the annular channel is connected to the groove through the connecting hole, and is connected to the accommodation space of the cavity through the exhaust hole; an annular shield is located in the annular passage, and the annular shutter includes a driven engagement unit, wherein the driven engagement unit is connected to an active engagement unit of a driving rod, and when the driving rod rotates, it will drive the annular shutter relative to the annular The main body rotates to adjust the area of the connecting hole of the annular main body that is blocked by the annular blocking member; a carrying plate is located in the accommodation space and includes a carrying surface for carrying at least one wafer, wherein the annular main body The exhaust hole is located around the bearing surface of the carrier tray; and an air intake unit includes a plurality of air inlet holes, wherein the air inlet holes face the bearing surface of the carrier tray and are fluidly connected to the cavity of the cavity Accommodate space.
本發明提出另一種具有環形抽氣單元的薄膜沉積機台,包括:一腔體,包括一容置空間及一溝槽,其中該溝槽位於該容置空間的外圍;一環形抽氣單元,包括:一環形主體,包括一環形凹槽、至少一連接孔及複數個排氣孔,其中該環形主體用以覆蓋該腔體的該溝槽;一環形蓋板,覆蓋該環形主體的該環形凹槽,使得該環形凹槽形成一環形通道,其中該環形通道經由該連接孔連接該溝槽,並經由該排氣孔連接該腔體的該容置空間;一環形遮擋件,位於該環形通道內,該環形遮擋件連接一驅動桿,並透過該驅動桿帶動該環形遮擋件在該環形通道內相對於該環形主體升降,以調整該環形主體的該連接孔被該環形遮擋件所遮擋的面積;一承載盤,位於該容置空間內,並包括一承載面用以承載至少一晶圓,其中該環形主體的該排氣孔位於該承載盤的該承載面周圍;及一進氣單元,包括複數個進氣孔,其中該進氣孔朝向該承載盤的該承載面,並流體連接該腔體的該容置空間。The present invention proposes another thin film deposition machine with an annular air pumping unit, comprising: a cavity, including an accommodating space and a groove, wherein the groove is located at the periphery of the accommodating space; an annular air pumping unit, It includes: an annular main body, including an annular groove, at least one connecting hole and a plurality of exhaust holes, wherein the annular main body is used to cover the groove of the cavity; an annular cover plate, covering the annular main body groove, so that the annular groove forms an annular channel, wherein the annular channel is connected to the groove through the connecting hole, and connected to the accommodating space of the cavity through the exhaust hole; an annular blocking member is located in the annular In the channel, the annular shutter is connected to a driving rod, and through the driving rod, the annular shutter is driven up and down relative to the annular main body in the annular passage, so as to adjust the connection hole of the annular main body to be blocked by the annular shutter area; a carrying plate, located in the containing space, and includes a carrying surface for carrying at least one wafer, wherein the exhaust hole of the annular body is located around the carrying surface of the carrying plate; and an air intake The unit includes a plurality of air inlets, wherein the air inlets face the bearing surface of the bearing tray and are fluidly connected to the accommodating space of the cavity.
所述的具有環形抽氣單元的薄膜沉積機台,其中該環形抽氣單元的該複數個排氣孔高於該承載盤的該承載面。In the thin film deposition machine with an annular air extraction unit, the plurality of exhaust holes of the annular air extraction unit are higher than the carrying surface of the supporting plate.
所述的具有環形抽氣單元的薄膜沉積機台,其中該環形抽氣單元的該環形通道包括一第一環形空間及一第二環形空間,該第一環形空間位於該第二環形空間的徑向內側,且該第一環形空間的一第一高度大於該第二環形空間的一第二高度。The thin film deposition machine with an annular air extraction unit, wherein the annular channel of the annular air extraction unit includes a first annular space and a second annular space, the first annular space is located in the second annular space , and a first height of the first annular space is greater than a second height of the second annular space.
所述的具有環形抽氣單元的薄膜沉積機台,其中該第一環形空間經由該排氣孔連接該腔體的該容置空間,而該第二環形空間則經由該連接孔連接該腔體的該溝槽,且該第一環形空間的底部經由一環形斜面連接該第二環形空間的底部。In the thin film deposition machine with an annular suction unit, the first annular space is connected to the accommodating space of the cavity through the exhaust hole, and the second annular space is connected to the cavity through the connecting hole The groove of the body, and the bottom of the first annular space is connected to the bottom of the second annular space via an annular slope.
所述的具有環形抽氣單元的薄膜沉積機台,其中該環形抽氣單元的該環形主體包括一第一環形斜面,相對於該承載盤的一軸心傾斜,並朝向該進氣單元,該進氣單元包括一第二環形斜面環繞設置在該複數個進氣孔的周圍,其中該第一環形斜面及該第二環形斜面的傾斜角度相同,並用以對位該進氣單元及該環形抽氣單元。The thin film deposition machine with an annular air extraction unit, wherein the annular main body of the annular air extraction unit includes a first annular slope, which is inclined relative to an axis of the carrier plate and faces the air intake unit, The air intake unit includes a second annular bevel arranged around the plurality of air intake holes, wherein the inclination angles of the first annular bevel and the second annular bevel are the same, and are used to align the air intake unit and the Ring suction unit.
請參閱圖1,為本發明具有環形抽氣單元的薄膜沉積機台一實施例的剖面分解示意圖。如圖所示,具有環形抽氣單元的薄膜沉積機台10主要包括一腔體11、一承載盤13、一環形抽氣單元15及一進氣單元17,其中腔體11包括一容置空間112及一溝槽12,溝槽12位於容置空間112的外圍。承載盤13位於容置空間112內,並包括一承載面131用以承載至少一晶圓14。Please refer to FIG. 1 , which is an exploded cross-sectional schematic view of an embodiment of a thin film deposition machine with an annular air pumping unit according to the present invention. As shown in the figure, the thin film deposition machine 10 with the annular air extraction unit mainly includes a cavity 11, a
在本發明一實施例中,腔體11的容置空間112近似圓柱體,而溝槽12則為環狀體或管狀體,並環繞設置在容置空間112的外側。在本發明另一實施例中,容置空間112可為多邊形體,而溝槽12則為多邊形環狀體或管狀體。In an embodiment of the present invention, the accommodating space 112 of the cavity 11 is approximately a cylinder, and the
如圖1所示,環形抽氣單元15包括一環形主體151及一環形蓋板153,其中環形主體151包括複數個排氣孔154、至少一連接孔156及一環形凹槽158。環形凹槽158設置在環形主體151的上表面,排氣孔154設置在環形主體151的內側面155,而連接孔156則設置在環形主體151的底部1511。環形主體151用以覆蓋腔體11的溝槽12,使得位於環形主體151的底度151的連接孔156連接溝槽12。As shown in FIG. 1 , the annular
如圖2所示,環形蓋板153用以覆蓋環形主體151的環形凹槽158,使得環形凹槽158成為一環形通道152,其中環形通道152經由連接孔156連接溝槽12,並經由排氣孔154連接腔體11的容置空間112。在本發明一實施例中,環形通道152可包括一第一環形空間1521及一第二環形空間1523,其中第一環形空間1521位於第二環形空間1523的徑向內側。As shown in Figure 2, the
第一環形空間1521的第一高度H1大於第二環形空間1523的第二高度H2,其中第一環形空間1521經由排氣孔154連接腔體11的容置空間112,而第二環形空間1523經由連接孔156連接溝槽12。此外第一環形空間1521的底部可經由一環形斜面連接第二環形空間1523的底部,以利於由排氣孔154進入環形通道152的氣體輸送至溝槽12。The first height H1 of the first
在本發明一實施例中,環形抽氣單元15可包括一環形凸部157,其中環形凸部157連接內側面155,沿著環形抽氣單元15的徑向內側凸出內側面155,並在排氣孔154的下方形成一凸出的導引部。當承載盤13靠近環形抽氣單元15時,承載盤13的側面會貼近環形抽氣單元15的環形凸部157,以在容置空間112內定義出一反應空間,並可透過環形凸部157將晶圓14及/或承載盤13上方的氣體引導至排氣孔154。In an embodiment of the present invention, the annular
如圖3所示,腔體11的溝槽12可經由一抽氣管線181連接一抽氣馬達18,其中抽氣馬達18經由抽氣管線181、溝槽12、環形通道152及排氣孔154抽出容置空間112內的氣體。在本發明一實施例中,排氣孔154可均勻分布在環形抽氣單元15的內側面155上。在不同實施例中,環形抽氣單元15不同區域的內側面155上可設置不同密度或孔徑的排氣孔154,例如排氣孔154在距離抽氣馬達18較遠的區域具有較高的設置密度或孔徑。As shown in FIG. 3 , the
在對承載盤13承載的晶圓14進行沉積時,承載盤13會靠近環形抽氣單元15,使得環形抽氣單元15的排氣孔154位於承載盤13的承載面131周圍,其中排氣孔154沿著平行承載面131及/或沿著承載面131的徑向設置。When the wafer 14 carried by the
腔體11上可設置一晶圓進出口111,其中晶圓進出口111連接容置空間112,例如晶圓進出口111及抽氣馬達18分別設置在腔體11彼此面對的兩側。此外更可依據晶圓進出口111的位置調整溝槽12的深度,例如位於晶圓進出口111上方的溝槽12深度,小於與抽氣管線181相連接的溝槽12的深度。A wafer inlet and outlet 111 can be provided on the chamber 11 , wherein the wafer inlet and outlet 111 is connected to the accommodation space 112 , for example, the wafer inlet and outlet 111 and the suction motor 18 are respectively arranged on opposite sides of the chamber 11 . In addition, the depth of the
如圖1所示,進氣單元17包括一擴散面171及複數個進氣孔172,其中進氣單元17連接腔體11時,擴散面171及設置在擴散面171的進氣孔172會朝向承載盤13的承載面131及/或晶圓14。進氣單元17的進氣孔172流體連接容置空間112,並用以將氣體或前驅物輸送至晶圓14的上方。在實際應用時可先將環形抽氣單元15設置在腔體11上,而後將進氣單元17設置在環形抽氣單元15及腔體11上,其中環形抽氣單元15會位於腔體11及進氣單元17之間。As shown in Figure 1, the air intake unit 17 includes a diffuser surface 171 and a plurality of air intake holes 172, wherein when the air intake unit 17 is connected to the cavity 11, the diffuser surface 171 and the air intake holes 172 arranged on the diffuser surface 171 will face The carrying surface 131 of the
由進氣單元17輸送至容置空間112的氣體或前驅物,會由環形抽氣單元15的排氣孔154排出容置空間112,其中氣體或前驅物會在承載盤13的承載面131及/或晶圓14的上表面形成穩定且均勻的流場,並有利於在晶圓14的表面沉積厚度均勻的薄膜。例如在沉積過程中排氣孔154可高於承載盤13的承載面131,或約略與晶圓14的上表面的高度相近。The gas or precursor delivered to the accommodating space 112 by the air intake unit 17 will be discharged from the accommodating space 112 through the
如圖1及圖2所示,環形抽氣單元15可包括一第一環形斜面159,其中第一環形斜面159位於內側面155及環形蓋板153之間,相對於內側面155及/或承載盤13的軸心傾斜,並朝向進氣單元17。進氣單元17可包括一第二環形斜面173,其中第二環形斜面173環繞設置在擴散面171及/或複數個進氣孔172的周圍。第一環形斜面159及第二環形斜面173的傾斜角度相同,可用以對位進氣單元17及環形抽氣單元15,並提高進氣單元17及環形抽氣單元15接合的緊密度。As shown in Figures 1 and 2, the annular
請參閱圖4、圖5及圖6,分別為本發明環形抽氣單元操作在遮擋狀態一實施例的剖面示意圖、操作在開啟狀態一實施例的剖面示意圖及環形抽氣單元的環形主體及環形遮擋件一實施例的俯視圖。如圖所示,環形抽氣單元15包括一環形主體151、一環形蓋板153及一環形遮擋件161,其中環形蓋板153連接環形主體151,並於兩者之間形成一環形通道152,而環形遮擋件161則位於環形通道152內。Please refer to Fig. 4, Fig. 5 and Fig. 6, which are respectively a schematic cross-sectional view of an embodiment of the annular air extraction unit operating in the shielding state, a schematic cross-sectional view of an embodiment of the operating in the open state, and the annular main body and the annular air extraction unit of the present invention. A top view of an embodiment of the shield. As shown in the figure, the annular
環形遮擋件161位於環形主體151的連接孔156上方,在本發明一實施例中,環形遮擋件161上設置複數個開口1611,其中開口1611的數量可與環形主體151的連接孔156的數量相同。環形遮擋件161可相對於環形主體151轉動,以調整環形主體151的連接孔156被環形遮擋件161所遮擋的面積,並改變經由排氣孔154抽出的氣體流量。The annular shield 161 is located above the connecting
具體而言,環形遮擋件161的開口1611可對準環形主體151的連接孔156,使得連接孔156不會被環形遮擋件161所遮擋,以提高經由排氣孔154抽出的氣體流量。在實際應用時可依據製程的條件,調整連接孔156的大小,以利於在晶圓14的表面形成均勻且穩定的流場。Specifically, the opening 1611 of the annular shield 161 can be aligned with the connecting
如圖4及圖5所示,驅動桿163用以連接並驅動環形遮擋件161相對環形主體151轉動,例如環形遮擋件161可透過軸承連接環形主體151,並於環形遮擋件161上設置一從動嚙合單元1613,而驅動桿163上則設置對應的主動嚙合單元1631,例如主動嚙合單元1631為齒輪或鏈輪,而從動嚙合單元1613為齒條、齒輪或鏈條。當馬達帶動驅動桿163轉動時,便會驅動環形遮擋件161相對於環形主體151轉動,以調整被環形遮擋件161遮擋的連接孔156的面積。As shown in Figures 4 and 5, the drive rod 163 is used to connect and drive the ring-shaped shutter 161 to rotate relative to the ring-shaped
如圖7及圖8所示,在本發明另一實施例中,環形遮擋件161可連接一驅動桿163,其中驅動桿163可連接一氣缸,並透過驅動桿163帶動環形遮擋件161相對於環形主體151升降,以調整被環形遮擋件161遮擋的環形主體151的連接孔156的面積。當環形遮擋件161遠離環形主體151時,可增加經由排氣孔154抽出的氣體流量。當環形遮擋件161靠近環形主體151時,則會降低經由排氣孔154抽出的氣體流量。As shown in Figures 7 and 8, in another embodiment of the present invention, the annular shutter 161 can be connected to a driving rod 163, wherein the driving rod 163 can be connected to a cylinder, and the driving rod 163 drives the annular shutter 161 relative to The annular
環形遮擋件161及驅動桿163皆設置在容置空間112的外部,並位於氣體傳輸路徑的下游。驅動桿163驅動環形遮擋件161位移時產生的污染微粒,會伴隨抽出的氣體經由溝槽12及抽氣管線181被抽氣馬達18導出,而不至於影響容置空間12的潔淨度。Both the annular shutter 161 and the driving rod 163 are disposed outside the accommodating space 112 and located downstream of the gas transmission path. The pollution particles generated when the driving rod 163 drives the displacement of the annular shutter 161 will be guided out by the suction motor 18 along with the pumped gas through the
以上所述者,僅為本發明之一較佳實施例而已,並非用來限定本發明實施之範圍,即凡依本發明申請專利範圍所述之形狀、構造、特徵及精神所為之均等變化與修飾,均應包括於本發明之申請專利範圍內。The above is only one of the preferred embodiments of the present invention, and is not used to limit the scope of the present invention, that is, all changes and equal changes made according to the shape, structure, characteristics and spirit described in the patent scope of the present invention Modifications should be included in the patent application scope of the present invention.
10:具有環形抽氣單元的薄膜沉積機台 11:腔體 111:晶圓進出口 112:容置空間 12:溝槽 13:承載盤 131:承載面 14:晶圓 15:環形抽氣單元 151:環形主體 1511:底部 152:環形通道 1521:第一環形空間 1523:第二環形空間 153:環形蓋板 154:排氣孔 155:內側面 156:連接孔 157:環形凸部 158:環形凹槽 159:第一環形斜面 161:環形遮擋件 1611:開口 1613:從動嚙合單元 163:驅動桿 1631:主動嚙合單元 17:進氣單元 171:擴散面 172:進氣孔 173:第二環形斜面 18:抽氣馬達 181:抽氣管線 H1:第一高度 H2:第二高度 10: Thin film deposition machine with annular suction unit 11: Cavity 111:Wafer import and export 112:Accommodating space 12: Groove 13: carrying plate 131: bearing surface 14:Wafer 15: Ring pumping unit 151: ring body 1511: bottom 152: Ring channel 1521: First Annular Space 1523: Second Annular Space 153: ring cover 154: exhaust hole 155: inner side 156: connection hole 157: Annular convex part 158: Annular groove 159: The first circular slope 161: ring shield 1611: opening 1613: driven meshing unit 163: drive rod 1631: active meshing unit 17: Air intake unit 171: Diffusion surface 172: air intake 173: the second annular slope 18: Air extraction motor 181: Extraction pipeline H1: first height H2: second height
[圖1]為本發明具有環形抽氣單元的薄膜沉積機台一實施例的剖面分解示意圖。[ FIG. 1 ] is an exploded cross-sectional schematic view of an embodiment of a thin film deposition machine with an annular air pumping unit according to the present invention.
[圖2]為本發明環形抽氣單元一實施例的剖面示意圖。[ Fig. 2 ] is a schematic cross-sectional view of an embodiment of the annular air pumping unit of the present invention.
[圖3]為本發明具有環形抽氣單元的薄膜沉積機台一實施例的立體剖面示意圖。[ Fig. 3 ] is a three-dimensional cross-sectional schematic view of an embodiment of a thin film deposition machine with an annular air pumping unit according to the present invention.
[圖4]為本發明環形抽氣單元操作在遮擋狀態一實施例的剖面示意圖。[ FIG. 4 ] is a schematic cross-sectional view of an embodiment of the annular air pumping unit of the present invention operating in a shielded state.
[圖5]為本發明環形抽氣單元操作在開啟狀態一實施例的剖面示意圖。[ Fig. 5 ] is a schematic cross-sectional view of an embodiment of the annular air pumping unit of the present invention operating in an open state.
[圖6]為本發明環形抽氣單元的環形主體及環形遮擋件一實施例的俯視圖。[ Fig. 6 ] It is a top view of an embodiment of the annular body and the annular shield of the annular air pumping unit of the present invention.
[圖7]為本發明環形抽氣單元操作在開啟狀態又一實施例的剖面示意圖。[ Fig. 7 ] is a schematic cross-sectional view of yet another embodiment of the annular air pumping unit of the present invention operating in an open state.
[圖8]為本發明環形抽氣單元操作在遮擋狀態又一實施例的剖面示意圖。[ Fig. 8 ] is a schematic cross-sectional view of another embodiment of the annular air pumping unit of the present invention operating in a shielded state.
151:環形主體 151: ring body
152:環形通道 152: Ring channel
153:環形蓋板 153: ring cover
154:排氣孔 154: exhaust hole
156:連接孔 156: connection hole
161:環形遮擋件 161: ring shield
1613:從動嚙合單元 1613: driven meshing unit
163:驅動桿 163: drive rod
1631:主動嚙合單元 1631: active meshing unit
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