CN116334586A - Deposition machine with annular air extraction unit - Google Patents
Deposition machine with annular air extraction unit Download PDFInfo
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- CN116334586A CN116334586A CN202111598379.7A CN202111598379A CN116334586A CN 116334586 A CN116334586 A CN 116334586A CN 202111598379 A CN202111598379 A CN 202111598379A CN 116334586 A CN116334586 A CN 116334586A
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- 230000008021 deposition Effects 0.000 title claims abstract description 31
- 238000000605 extraction Methods 0.000 title abstract description 15
- 238000005086 pumping Methods 0.000 claims description 60
- 239000012530 fluid Substances 0.000 claims description 4
- 238000004378 air conditioning Methods 0.000 claims 2
- 235000012431 wafers Nutrition 0.000 description 27
- 238000000151 deposition Methods 0.000 description 20
- 239000002243 precursor Substances 0.000 description 16
- 238000006243 chemical reaction Methods 0.000 description 12
- 238000000034 method Methods 0.000 description 7
- 239000010408 film Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 239000010409 thin film Substances 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 206010023230 Joint stiffness Diseases 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention relates to a deposition machine with an annular air extraction unit, which comprises a cavity, a bearing disc, an annular air extraction unit and an air inlet unit, wherein the cavity comprises a containing space and a groove, and the groove surrounds the periphery of the containing space. The annular air extraction unit comprises an annular main body, an annular cover plate and an annular shielding piece, wherein the annular main body comprises an annular groove, at least one connecting hole and a plurality of exhaust holes. The annular cover plate covers the annular groove, so that the annular groove forms an annular channel, and the groove is connected with the accommodating space through the connecting hole, the annular channel and the exhaust hole. The annular shielding piece is positioned in the annular channel and can move relative to the annular main body so as to adjust the area of the connecting hole and the flow rate of the gas pumped out by the exhaust hole and form a stable flow field on the bearing disc.
Description
Technical Field
The invention relates to a deposition machine with an annular air extraction unit, which is beneficial to forming a stable flow field on a wafer borne by a bearing disc and improving the quality of film deposition.
Background
With the continuous progress of integrated circuit technology, electronic products are currently moving toward the trend of light weight, small size, high performance, high reliability and intelligence. The technology of transistor miniaturization in electronic products is of great importance, and along with the size reduction of transistors, the current transmission time and the energy consumption can be reduced, so that the purposes of rapid operation and energy saving are achieved. In today's miniaturized transistors, some of the critical thin films are almost only a few atoms thick, and atomic layer deposition processes are one of the main techniques for developing these microstructures.
The atomic layer deposition process is a technique of plating substances on a substrate surface layer by layer in the form of single atoms, and the main reactants of the atomic layer deposition have two chemical substances, commonly called precursors, and sequentially transfer the two precursors into a reaction space.
Specifically, the first precursor is first delivered into the reaction space, so that the first precursor is guided to the surface of the substrate, and the chemisorption process is automatically terminated until the surface is saturated. The cleaning gas is delivered into the reaction space, and the gas in the reaction space is pumped out to remove the residual first precursor in the reaction space. And injecting a second precursor into the reaction space, so that the second precursor reacts with the first precursor chemically adsorbed on the surface of the substrate to generate a required film, and the reaction process is completed until the reaction of the first precursor adsorbed on the surface of the substrate is completed. Then, a cleaning gas is injected into the reaction space to remove the residual second precursor in the reaction space. By repeating the above steps, a thin film can be formed on the substrate.
During deposition, the uniformity of the deposited film is greatly affected by the uniform distribution of the precursor in the reaction space and the temperature of the substrate. Therefore, the uniformity of precursor distribution and temperature is improved as much as possible in each large process equipment factory to improve the quality of the deposition process.
Disclosure of Invention
As described in the prior art, how to uniformly distribute the precursor on the wafer to improve the quality of the thin film deposited on the wafer surface is currently the direction of the industry. The invention provides a novel deposition machine with an annular air suction unit, which can form a uniform and stable flow field above a wafer and a bearing disc so as to improve the quality of a film deposited on the surface of the wafer.
An object of the present invention is to provide a deposition apparatus with an annular pumping unit, which mainly includes a chamber, a carrier plate, an annular pumping unit and an air inlet unit, wherein the chamber includes a receiving space and a groove. The groove is an annular body and is arranged around the periphery of the accommodating space.
The annular air extraction unit comprises an annular main body and an annular cover body, wherein the annular main body comprises an annular groove, at least one connecting hole and a plurality of air exhaust holes, the air exhaust holes are arranged on the inner side surface of the annular main body, and the connecting hole is arranged on the bottom surface of the annular main body. The annular cover body is used for covering the annular groove of the annular main body, so that the annular groove forms an annular channel.
In the deposition process, the exhaust holes of the annular air exhaust units are positioned around the bearing surface of the bearing plate and/or the wafer, and gas is pumped out of the accommodating space along the radial direction of the bearing plate through the exhaust holes so as to form a uniform flow field on the bearing surface of the bearing plate and/or the upper surface of the wafer.
An object of the present invention is to provide an annular pumping unit, which mainly comprises an annular main body, an annular cover plate and an annular shielding member, wherein the annular main body is provided with an annular groove. The annular shield is positioned within the annular recess and the annular cover plate covers the annular recess such that the annular recess forms an annular channel in which the annular shield is positioned.
The annular shielding piece is connected with a driving rod and drives the annular shielding piece to move relative to the annular main body through the driving rod so as to change the area of a connecting hole on the annular main body shielded by the annular shielding piece and adjust the gas flow in the accommodating space extracted by the annular air extracting unit.
In order to achieve the above object, the present invention provides a deposition apparatus with annular pumping unit, comprising: the cavity comprises an accommodating space and a groove, wherein the groove is positioned at the periphery of the accommodating space; an annular pumping cell comprising: the annular main body comprises an annular groove, at least one connecting hole and a plurality of exhaust holes, wherein the annular main body is used for covering the groove of the cavity; the annular cover plate covers the annular groove of the annular main body, so that the annular groove forms an annular channel, wherein the annular channel is connected with the groove through the connecting hole and is connected with the accommodating space of the cavity through the exhaust hole; the annular shielding piece is positioned in the annular channel and comprises a driven meshing unit, wherein the driven meshing unit is connected with a driving meshing unit of a driving rod, and the driving rod drives the annular shielding piece to rotate relative to the annular main body when rotating so as to adjust the area of the connecting hole of the annular main body shielded by the annular shielding piece; the bearing plate is positioned in the accommodating space and comprises a bearing surface for bearing at least one wafer, wherein the exhaust hole of the annular main body is positioned around the bearing surface of the bearing plate; and an air inlet unit comprising a plurality of air inlet holes, wherein the air inlet holes face the bearing surface of the bearing disc and are in fluid connection with the accommodating space of the cavity.
The invention provides another deposition machine with annular air extraction units, which comprises: the cavity comprises an accommodating space and a groove, wherein the groove is positioned at the periphery of the accommodating space; an annular pumping cell comprising: the annular main body comprises an annular groove, at least one connecting hole and a plurality of exhaust holes, wherein the annular main body is used for covering the groove of the cavity; the annular cover plate covers the annular groove of the annular main body, so that the annular groove forms an annular channel, wherein the annular channel is connected with the groove through the connecting hole and is connected with the accommodating space of the cavity through the exhaust hole; the annular shielding piece is positioned in the annular channel, is connected with a driving rod and drives the annular shielding piece to lift relative to the annular main body in the annular channel through the driving rod so as to adjust the area of the connecting hole of the annular main body shielded by the annular shielding piece; the bearing plate is positioned in the accommodating space and comprises a bearing surface for bearing at least one wafer, wherein the exhaust hole of the annular main body is positioned around the bearing surface of the bearing plate; and an air inlet unit comprising a plurality of air inlet holes, wherein the air inlet holes face the bearing surface of the bearing disc and are in fluid connection with the accommodating space of the cavity.
The deposition machine with the annular air extraction unit is characterized in that the plurality of air exhaust holes of the annular air extraction unit are higher than the bearing surface of the bearing disc.
The annular channel of the annular air extraction unit comprises a first annular space and a second annular space, wherein the first annular space is positioned on the radial inner side of the second annular space, and a first height of the first annular space is larger than a second height of the second annular space.
The first annular space is connected with the accommodating space of the cavity through the exhaust hole, the second annular space is connected with the groove of the cavity through the connecting hole, and the bottom of the first annular space is connected with the bottom of the second annular space through an annular inclined plane.
The deposition machine with the annular air extraction unit comprises a first annular inclined plane which inclines relative to an axle center of the bearing disc and faces the air inlet unit, and the air inlet unit comprises a second annular inclined plane which is circumferentially arranged around the plurality of air inlet holes, wherein the inclination angles of the first annular inclined plane and the second annular inclined plane are the same and are used for aligning the air inlet unit and the annular air extraction unit.
The beneficial effects of the invention are as follows: a novel deposition machine with annular air pumping units is provided, and a uniform and stable flow field can be formed above a wafer and a bearing disc so as to improve the quality of a film deposited on the surface of the wafer.
Drawings
FIG. 1 is a schematic exploded view of a deposition tool with annular pumping cells according to an embodiment of the present invention.
Figure 2 is a schematic cross-sectional view of one embodiment of an annular pumping cell of the present invention.
FIG. 3 is a schematic perspective view of a deposition tool with annular pumping cells according to an embodiment of the invention.
FIG. 4 is a schematic cross-sectional view of one embodiment of the annular pumping unit of the present invention operating in a occluded state.
FIG. 5 is a schematic cross-sectional view of an embodiment of the present invention with the annular pumping unit operating in an on state.
FIG. 6 is a top view of one embodiment of the annular body and annular shield of the annular pumping cell of the present invention.
FIG. 7 is a schematic cross-sectional view of yet another embodiment of the annular pumping cell of the present invention operating in an on state.
FIG. 8 is a schematic cross-sectional view of yet another embodiment of the annular pumping cell of the present invention operating in a occluded state.
Reference numerals illustrate: 10-a deposition station having an annular pumping cell; 11-a cavity; 111-wafer inlet and outlet; 112-accommodating space; 12-grooves; 13-a carrier tray; 131-bearing surface; 14-wafer; 15-annular pumping units; 151-an annular body; 1511-bottom; 152-annular channel; 1521-a first annular space; 1523-a second annular space; 153-annular cover plate; 154-exhaust holes; 155-inner side; 156-connecting holes; 157-annular protrusion; 158-an annular groove; 159-a first annular chamfer; 161-annular shield; 1611-opening; 1613-a driven engagement unit; 163-driving rod; 1631-an active engagement unit; 17-an air intake unit; 171-a diffusion surface; 172-an air inlet hole; 173-a second annular ramp; 18-an air extraction motor; 181-an extraction line; h1-first height; h2-second height.
Detailed Description
Referring to FIG. 1, a schematic exploded view of a deposition tool with annular pumping cells according to an embodiment of the present invention is shown. As shown, the deposition apparatus 10 with the annular pumping unit mainly comprises a chamber 11, a carrier plate 13, an annular pumping unit 15 and an air inlet unit 17, wherein the chamber 11 comprises a receiving space 112 and a groove 12, and the groove 12 is located at the periphery of the receiving space 112. The carrier 13 is disposed in the accommodating space 112 and includes a carrying surface 131 for carrying at least one wafer 14.
In an embodiment of the present invention, the accommodating space 112 of the cavity 11 is approximately a cylinder, and the groove 12 is an annular or tubular body and is disposed around the outer side of the accommodating space 112. In another embodiment of the present invention, the accommodating space 112 may be a polygonal body, and the groove 12 is a polygonal ring or a tubular body.
As shown in FIG. 1, the annular pumping unit 15 comprises an annular main body 151 and an annular cover plate 153, wherein the annular main body 151 comprises a plurality of exhaust holes 154, at least one connecting hole 156 and an annular groove 158. An annular groove 158 is provided on the upper surface of the annular body 151, the exhaust hole 154 is provided on the inner side 155 of the annular body 151, and the connection hole 156 is provided on the bottom 1511 of the annular body 151. The ring body 151 is configured to cover the groove 12 of the cavity 11 such that the connecting hole 156 located at the bottom 151 of the ring body 151 connects the groove 12.
As shown in fig. 2, the annular cover 153 is configured to cover the annular groove 158 of the annular main body 151, such that the annular groove 158 is an annular channel 152, wherein the annular channel 152 is connected to the groove 12 via the connection hole 156 and is connected to the accommodating space 112 of the cavity 11 via the exhaust hole 154. In one embodiment of the present invention, the annular channel 152 may comprise a first annular space 1521 and a second annular space 1523, wherein the first annular space 1521 is located radially inward of the second annular space 1523.
The first height H1 of the first annular space 1521 is greater than the second height H2 of the second annular space 1523, wherein the first annular space 1521 is connected to the receiving space 112 of the cavity 11 via the vent hole 154 and the second annular space 1523 is connected to the groove 12 via the connection hole 156. In addition, the bottom of the first annular space 1521 may be connected to the bottom of the second annular space 1523 via an annular chamfer to facilitate the transfer of gas from the exhaust port 154 into the annular channel 152 to the groove 12.
In one embodiment of the present invention, annular pumping cell 15 may include an annular protrusion 157, wherein annular protrusion 157 connects to inner side 155, protrudes radially inward of annular pumping cell 15 from inner side 155, and forms a protruding guide below vent hole 154. When the carrier plate 13 approaches the annular pumping unit 15, the side surface of the carrier plate 13 is close to the annular protrusion 157 of the annular pumping unit 15, so as to define a reaction space in the accommodating space 112, and the gas above the wafer 14 and/or the carrier plate 13 can be guided to the exhaust hole 154 through the annular protrusion 157.
As shown in fig. 3, the groove 12 of the cavity 11 may be connected to an air-pumping motor 18 through an air-pumping line 181, wherein the air-pumping motor 18 pumps the air in the accommodating space 112 through the air-pumping line 181, the groove 12, the annular channel 152 and the air-exhausting hole 154. In one embodiment of the invention, the vents 154 may be uniformly distributed on the inner side 155 of the annular pumping cell 15. In various embodiments, different densities or apertures of the exhaust holes 154 may be provided on the inner side 155 of different areas of the annular pumping cell 15, such as where the exhaust holes 154 have a higher arrangement density or aperture in areas farther from the pumping motor 18.
During deposition of the wafers 14 carried by the carrier plate 13, the carrier plate 13 is brought close to the annular pumping unit 15, such that the exhaust holes 154 of the annular pumping unit 15 are located around the carrying surface 131 of the carrier plate 13, wherein the exhaust holes 154 are arranged along the parallel carrying surface 131 and/or along the radial direction of the carrying surface 131.
The chamber 11 may be provided with a wafer inlet/outlet 111, wherein the wafer inlet/outlet 111 is connected to the accommodating space 112, for example, the wafer inlet/outlet 111 and the air suction motor 18 are respectively disposed on two opposite sides of the chamber 11. Furthermore, the depth of the groove 12 can be adjusted according to the position of the wafer inlet/outlet 111, for example, the depth of the groove 12 above the wafer inlet/outlet 111 is smaller than the depth of the groove 12 connected to the gas exhaust line 181.
As shown in fig. 1, the air inlet unit 17 includes a diffusion surface 171 and a plurality of air inlet holes 172, wherein when the air inlet unit 17 is connected to the chamber 11, the diffusion surface 171 and the air inlet holes 172 disposed on the diffusion surface 171 face the carrying surface 131 of the carrying tray 13 and/or the wafer 14. The inlet holes 172 of the inlet unit 17 are fluidly connected to the receiving space 112 and are configured to deliver a gas or precursor over the wafer 14. In practical applications, the annular pumping unit 15 may be disposed on the cavity 11, and then the air inlet unit 17 may be disposed on the annular pumping unit 15 and the cavity 11, where the annular pumping unit 15 is located between the cavity 11 and the air inlet unit 17.
The gas or precursor delivered to the accommodating space 112 by the gas inlet unit 17 is exhausted from the accommodating space 112 through the exhaust holes 154 of the annular exhaust unit 15, wherein the gas or precursor forms a stable and uniform flow field on the carrying surface 131 of the carrying tray 13 and/or the upper surface of the wafer 14, and is beneficial to depositing a thin film with uniform thickness on the surface of the wafer 14. For example, the exhaust holes 154 may be higher than the bearing surface 131 of the carrier plate 13 during deposition or may be approximately similar in height to the upper surface of the wafer 14.
As shown in fig. 1 and 2, annular pumping unit 15 may include a first annular chamfer 159, wherein first annular chamfer 159 is located between inner side 155 and annular cover plate 153, is inclined with respect to the axis of inner side 155 and/or carrier plate 13, and is oriented toward air intake unit 17. The air inlet unit 17 may include a second annular inclined surface 173, wherein the second annular inclined surface 173 is disposed around the diffusion surface 171 and/or the plurality of air inlet holes 172. The first annular inclined surface 159 and the second annular inclined surface 173 have the same inclination angle, and can be used to align the air inlet unit 17 and the annular air exhaust unit 15 and improve the joint tightness of the air inlet unit 17 and the annular air exhaust unit 15.
Referring to FIGS. 4, 5 and 6, a schematic cross-sectional view of an embodiment of an annular pumping cell of the present invention operating in a blocked state, a schematic cross-sectional view of an embodiment operating in an open state, and a top view of an embodiment of an annular body and annular shield of an annular pumping cell, respectively. As shown, annular pumping cell 15 includes an annular body 151, an annular cover 153, and an annular shield 161, wherein annular cover 153 is coupled to annular body 151 and defines an annular channel 152 therebetween, and annular shield 161 is disposed within annular channel 152.
The annular shutter 161 is located above the connection holes 156 of the annular body 151, and in an embodiment of the present invention, a plurality of openings 1611 are provided on the annular shutter 161, wherein the number of the openings 1611 may be the same as the number of the connection holes 156 of the annular body 151. The annular shutter 161 is rotatable relative to the annular body 151 to adjust the area of the connection aperture 156 of the annular body 151 that is covered by the annular shutter 161 and to vary the flow of gas drawn through the exhaust apertures 154.
Specifically, the opening 1611 of the annular shield 161 may be aligned with the connection aperture 156 of the annular body 151 such that the connection aperture 156 is not shielded by the annular shield 161 to increase the flow of gas drawn through the exhaust apertures 154. In practical application, the size of the connection hole 156 can be adjusted according to the process conditions, so as to facilitate forming a uniform and stable flow field on the surface of the wafer 14.
As shown in fig. 4 and 5, the driving rod 163 is used for connecting and driving the annular shielding member 161 to rotate relative to the annular main body 151, for example, the annular shielding member 161 can be connected to the annular main body 151 through a bearing, a driven engagement unit 1613 is disposed on the annular shielding member 161, and a corresponding driving engagement unit 1631 is disposed on the driving rod 163, for example, the driving engagement unit 1631 is a gear or a sprocket, and the driven engagement unit 1613 is a rack, a gear or a chain. When the motor rotates the driving rod 163, the annular shutter 161 is driven to rotate relative to the annular body 151, so as to adjust the area of the connection hole 156 blocked by the annular shutter 161.
In another embodiment of the present invention, as shown in fig. 7 and 8, the annular shielding member 161 may be connected to a driving rod 163, wherein the driving rod 163 may be connected to a cylinder, and the driving rod 163 drives the annular shielding member 161 to lift and lower relative to the annular main body 151, so as to adjust the area of the connecting hole 156 of the annular main body 151 shielded by the annular shielding member 161. When the annular shield 161 is spaced apart from the annular body 151, the flow of gas drawn through the vent holes 154 may be increased. When the annular shield 161 approaches the annular body 151, the flow of gas drawn through the vent holes 154 is reduced.
The annular shutter 161 and the driving rod 163 are disposed outside the accommodating space 112 and downstream of the gas transmission path. The contaminant particles generated when the driving rod 163 drives the annular shielding member 161 to move are led out by the air pumping motor 18 along with the pumped air through the groove 12 and the pumping air line 181, so that the cleanliness of the accommodating space 12 is not affected.
The invention has the advantages that:
a novel deposition machine with annular air pumping units is provided, and a uniform and stable flow field can be formed above a wafer and a bearing disc so as to improve the quality of a film deposited on the surface of the wafer.
The foregoing description is only a preferred embodiment of the present invention and is not intended to limit the scope of the invention, i.e., all equivalent variations and modifications in shape, construction, characteristics and spirit as defined in the claims should be embraced by the claims.
Claims (10)
1. A deposition station having an annular pumping cell, comprising:
the cavity comprises an accommodating space and a groove, wherein the groove is positioned at the periphery of the accommodating space;
an annular pumping cell comprising:
the annular main body comprises an annular groove, at least one connecting hole and a plurality of exhaust holes, wherein the annular main body is used for covering the groove of the cavity;
the annular cover plate covers the annular groove of the annular main body, so that the annular groove forms an annular channel, wherein the annular channel is connected with the groove through the connecting hole and is connected with the accommodating space of the cavity through the exhaust hole;
the annular shielding piece is positioned in the annular channel and comprises a driven meshing unit, wherein the driven meshing unit is connected with a driving meshing unit of a driving rod, and the driving rod drives the annular shielding piece to rotate relative to the annular main body when rotating so as to adjust the area of the connecting hole of the annular main body shielded by the annular shielding piece;
the bearing plate is positioned in the accommodating space and comprises a bearing surface for bearing at least one wafer, wherein the exhaust hole of the annular main body is positioned around the bearing surface of the bearing plate; a kind of electronic device with high-pressure air-conditioning system
The air inlet unit comprises a plurality of air inlet holes, wherein the air inlet holes face the bearing surface of the bearing disc and are in fluid connection with the accommodating space of the cavity.
2. The deposition tool of claim 1, wherein the plurality of exhaust holes of the annular pumping cell are higher than the load surface of the load plate.
3. The deposition tool of claim 1, wherein the annular channel of the annular pumping cell comprises a first annular space and a second annular space, the first annular space being radially inward of the second annular space, and a first height of the first annular space being greater than a second height of the second annular space.
4. The deposition tool with annular pumping unit as defined in claim 3, wherein the first annular space is connected to the receiving space of the chamber via the exhaust hole, the second annular space is connected to the groove of the chamber via the connection hole, and a bottom of the first annular space is connected to a bottom of the second annular space via an annular slope.
5. The deposition tool with annular pumping unit of claim 1, wherein the annular body of the annular pumping unit comprises a first annular ramp inclined relative to an axis of the carrier plate and facing the air intake unit, the air intake unit comprises a second annular ramp circumferentially disposed around the plurality of air intake holes, wherein the first annular ramp and the second annular ramp have the same inclination angle and are used for aligning the air intake unit and the annular pumping unit.
6. A deposition station having an annular pumping cell, comprising:
the cavity comprises an accommodating space and a groove, wherein the groove is positioned at the periphery of the accommodating space;
an annular pumping cell comprising:
the annular main body comprises an annular groove, at least one connecting hole and a plurality of exhaust holes, wherein the annular main body is used for covering the groove of the cavity;
the annular cover plate covers the annular groove of the annular main body, so that the annular groove forms an annular channel, wherein the annular channel is connected with the groove through the connecting hole and is connected with the accommodating space of the cavity through the exhaust hole;
the annular shielding piece is positioned in the annular channel, is connected with a driving rod and drives the annular shielding piece to lift relative to the annular main body in the annular channel through the driving rod so as to adjust the area of the connecting hole of the annular main body shielded by the annular shielding piece;
the bearing plate is positioned in the accommodating space and comprises a bearing surface for bearing at least one wafer, wherein the exhaust hole of the annular main body is positioned around the bearing surface of the bearing plate; a kind of electronic device with high-pressure air-conditioning system
The air inlet unit comprises a plurality of air inlet holes, wherein the air inlet holes face the bearing surface of the bearing disc and are in fluid connection with the accommodating space of the cavity.
7. The deposition tool of claim 6 wherein the plurality of exhaust holes of the annular pumping cell are higher than the load surface of the load plate.
8. The deposition tool of claim 6, wherein the annular channel of the annular pumping cell comprises a first annular space and a second annular space, the first annular space being radially inward of the second annular space, and a first height of the first annular space being greater than a second height of the second annular space.
9. The deposition tool with annular pumping unit of claim 8, wherein the first annular space is connected to the receiving space of the chamber via the exhaust hole, the second annular space is connected to the trench of the chamber via the connection hole, and a bottom of the first annular space is connected to a bottom of the second annular space via an annular bevel.
10. The deposition tool with annular pumping cell of claim 6 wherein the annular body of the annular pumping cell comprises a first annular ramp inclined relative to an axis of the carrier plate and oriented toward the gas inlet cell, the gas inlet cell comprising a second annular ramp circumferentially disposed about the plurality of gas inlet holes, wherein the first annular ramp and the second annular ramp are inclined at the same angle and are aligned with the gas inlet cell and the annular pumping cell.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111598379.7A CN116334586A (en) | 2021-12-24 | 2021-12-24 | Deposition machine with annular air extraction unit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111598379.7A CN116334586A (en) | 2021-12-24 | 2021-12-24 | Deposition machine with annular air extraction unit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116334586A true CN116334586A (en) | 2023-06-27 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111598379.7A Pending CN116334586A (en) | 2021-12-24 | 2021-12-24 | Deposition machine with annular air extraction unit |
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| Country | Link |
|---|---|
| CN (1) | CN116334586A (en) |
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2021
- 2021-12-24 CN CN202111598379.7A patent/CN116334586A/en active Pending
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