CN116334587A - Deposition machine for improving substrate temperature distribution - Google Patents

Deposition machine for improving substrate temperature distribution Download PDF

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Publication number
CN116334587A
CN116334587A CN202111600672.2A CN202111600672A CN116334587A CN 116334587 A CN116334587 A CN 116334587A CN 202111600672 A CN202111600672 A CN 202111600672A CN 116334587 A CN116334587 A CN 116334587A
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Prior art keywords
annular
pumping
channel
substrate
ring
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CN202111600672.2A
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Chinese (zh)
Inventor
林俊成
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Tianhong Technology Co ltd
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Tianhong Technology Co ltd
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Priority to CN202111600672.2A priority Critical patent/CN116334587A/en
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The invention relates to a deposition machine for improving the temperature distribution of a substrate, which comprises a cavity, a bearing plate, a heating unit, an air pumping ring and an annular heater, wherein the heating unit is connected with the bearing plate and is used for heating the substrate borne by the bearing plate. The air exhaust ring comprises a plurality of air exhaust holes and an annular channel, wherein the air exhaust holes are positioned around the bearing plate and are used for exhausting the gas in the accommodating space through the air exhaust holes, the annular channel and the air exhaust channel in sequence so as to form a stable flow field on the substrate. The annular heater is arranged below the gas pumping ring, is positioned around the bearing plate and is used for heating the peripheral area of the bearing plate so as to improve the temperature distribution of the substrate borne by the bearing plate.

Description

Deposition machine for improving substrate temperature distribution
Technical Field
The invention relates to a deposition machine which can be used for improving the temperature distribution of a substrate borne by a bearing plate.
Background
With the continuous progress of integrated circuit technology, electronic products are currently moving toward the trend of light weight, small size, high performance, high reliability and intelligence. The technology of transistor miniaturization in electronic products is of great importance, and along with the size reduction of transistors, the current transmission time and the energy consumption can be reduced, so that the purposes of rapid operation and energy saving are achieved. In today's miniaturized transistors, some of the critical thin films are almost only a few atoms thick, and atomic layer deposition processes are one of the main techniques for developing these microstructures.
The atomic layer deposition process is a technique of plating substances on a substrate surface layer by layer in the form of single atoms, and the main reactants of the atomic layer deposition have two chemical substances, commonly called precursors, and sequentially transfer the two precursors into a reaction space.
Specifically, the first precursor is first delivered into the reaction space, so that the first precursor is guided to the surface of the substrate, and the chemisorption process is automatically terminated until the surface is saturated. The cleaning gas is delivered into the reaction space, and the gas in the reaction space is pumped out to remove the residual first precursor in the reaction space. And injecting a second precursor into the reaction space, so that the second precursor reacts with the first precursor chemically adsorbed on the surface of the substrate to generate a required film, and the reaction process is completed until the reaction of the first precursor adsorbed on the surface of the substrate is completed. Then, a cleaning gas is injected into the reaction space to remove the residual second precursor in the reaction space. By repeating the above steps, a thin film can be formed on the substrate.
During deposition, the uniformity of the deposited film is greatly affected by the uniform distribution of the precursor in the reaction space and the temperature of the substrate. Therefore, the uniformity of precursor distribution and temperature is improved as much as possible in each large process equipment factory to improve the quality of the deposition process.
Disclosure of Invention
As described in the prior art, conventional deposition tools often fail to uniformly distribute the precursor on the substrate, and also fail to form a uniform temperature on the substrate, thereby affecting the quality of the film deposited on the substrate surface. Therefore, the invention provides a novel deposition machine for improving the temperature distribution of the substrate, which can form a uniform and stable flow field above the substrate and the bearing plate, and can greatly improve the uniformity of the temperature of the substrate so as to be beneficial to forming a film with uniform thickness on the surface of the substrate.
An object of the present invention is to provide a deposition apparatus for improving temperature distribution of a substrate, which mainly includes a chamber, a carrier plate, a pumping ring, a diffusion unit, and an annular heater, wherein the chamber includes a receiving space and a pumping channel. The bearing plate is positioned in the accommodating space of the cavity and heats the substrate on the bearing plate through a heating unit.
The pumping ring is positioned around the bearing surface of the bearing disc and is used for transmitting the gas in the accommodating space to the pumping channel so as to form a uniform and stable flow field above the substrate. The annular heater is positioned below the pumping ring and surrounds the carrier plate.
The bearing surface of the bearing plate comprises a central area and a peripheral area, wherein the annular heating unit is used for heating the peripheral area of the bearing plate, so that the temperatures of the central area and the peripheral area of the bearing plate are similar, and uniform temperature distribution can be formed on the substrate, thereby improving the deposition quality of the thin film deposited on the machine plate.
In the deposition process, the bearing plate approaches to the direction of the gas pumping ring, and a reaction space is defined in the accommodating space through the diffusion unit, the bearing plate and the gas pumping ring, wherein the annular heater is positioned outside the reaction space. The annular heater is not located on the air extraction path of the reaction space and can not directly contact the air exhausted from the reaction space, so that the annular heater can stably provide heat to the bearing plate.
The annular heater can be fixed or integrated on the cavity or the pumping ring, cannot displace along with the bearing disc, and is beneficial to simplifying the circuit arrangement of the annular heater.
In order to achieve the above-mentioned object, the present invention provides a deposition apparatus for improving the temperature distribution of a substrate, comprising: the cavity comprises a containing space and an air suction channel, and the air suction channel is positioned at the periphery of the containing space; the bearing plate is positioned in the accommodating space and comprises a bearing surface for bearing at least one substrate, wherein the bearing surface comprises a central area and a peripheral area, and the peripheral area surrounds the outer side of the central area; the heating unit is connected with the bearing plate and used for heating the substrate borne by the bearing surface; the annular inner wall is positioned at the inner side of the annular outer wall, a plurality of exhaust holes are formed in the annular inner wall and are circumferentially arranged around the bearing surface of the bearing disc, an annular channel is arranged between the annular outer wall and the annular inner wall, and the annular channel is in fluid connection with the exhaust channel and the exhaust holes of the cavity; the diffusion unit comprises a plurality of air inlets facing the bearing surface of the bearing plate, wherein a reaction space is defined by the diffusion unit, the bearing plate and the air pumping ring in the accommodating space, and the air inlets of the diffusion unit convey at least one precursor to the reaction space and convey the precursor to the air pumping channel through the air exhaust holes and the annular channel; and the annular heater is positioned below the gas pumping ring, surrounds the periphery area of the bearing plate and is used for heating the periphery area of the bearing plate, wherein the annular heater is positioned outside the reaction space.
The deposition machine for improving the temperature distribution of the substrate, wherein the annular heater is integrated inside the pumping ring.
The deposition machine for improving the temperature distribution of the substrate comprises an annular bearing part which is positioned at the inner side of the air suction channel, wherein the annular bearing part is used for bearing an annular heater, and the exhaust ring is arranged on the annular heater.
The deposition machine for improving the temperature distribution of the substrate comprises a substrate inlet and a substrate outlet which are positioned below the air suction channel, and a connecting pipeline which is connected with the air suction channel.
The deposition machine for improving the temperature distribution of the substrate is characterized in that the height of the air suction channel connected with the connecting pipeline is larger than that of the air suction channel above the inlet and the outlet of the substrate.
The deposition machine for improving the temperature distribution of the substrate comprises one or more connecting holes, wherein the annular channel of the gas pumping ring is connected with the gas pumping channel of the cavity through the connecting holes, and the arrangement density or the aperture of the connecting holes above the substrate inlet and outlet are larger than the arrangement density or the aperture of the connecting holes above the connecting pipe line.
The deposition machine for improving the temperature distribution of the substrate is characterized in that the bearing disc is connected with a linear actuator, and the bearing disc is driven to be close to or far away from the diffusion unit through the linear actuator, and is close to the diffusion unit and defines a reaction space.
The deposition machine for improving the temperature distribution of the substrate, wherein the exhaust hole, the annular channel and the exhaust channel of the exhaust ring form an exhaust path, the precursor in the reaction space is extracted through the exhaust path, and the annular heater is independent from the exhaust path.
The deposition machine for improving the temperature distribution of the substrate comprises a first annular inclined plane which inclines relative to the axis of the bearing plate and faces the diffusion unit, and the diffusion unit comprises a second annular inclined plane which is circumferentially arranged around the plurality of air inlets, wherein the inclination angles of the first annular inclined plane and the second annular inclined plane are the same and are used for aligning the diffusion unit and the gas pumping ring.
The deposition machine for improving the temperature distribution of the substrate comprises an annular convex part connected with the annular inner wall and positioned below the exhaust hole.
The beneficial effects of the invention are as follows: the novel deposition machine for improving the temperature distribution of the substrate can form a uniform and stable flow field above the substrate and the bearing plate, and can greatly improve the uniformity of the temperature of the substrate so as to be beneficial to forming a film with uniform thickness on the surface of the substrate.
Drawings
FIG. 1 is a schematic exploded view of a deposition tool for improving substrate temperature distribution.
FIG. 2 is a schematic cross-sectional view of one embodiment of an exhaust ring and ring heater of a deposition tool for improving substrate temperature distribution.
FIG. 3 is a top view of one embodiment of a susceptor and ring heater of a deposition station for improving substrate temperature distribution.
FIG. 4 is a schematic cross-sectional view of an embodiment of a deposition apparatus for improving substrate temperature distribution during a loading and unloading state.
FIG. 5 is a schematic cross-sectional view of an embodiment of a deposition apparatus for improving the temperature distribution of a substrate according to the present invention.
FIG. 6 is a schematic diagram showing the temperature distribution of an embodiment of a carrier plate of a conventional deposition apparatus.
FIG. 7 is a schematic diagram of a temperature distribution of a susceptor of a deposition apparatus for improving a temperature distribution of a substrate according to an embodiment of the present invention.
Reference numerals illustrate: 10-a deposition tool for improving the temperature distribution of the substrate; 11-a cavity; 111-substrate access; 112-accommodating space; 113-an annular carrier; 114-an air extraction channel; 116-reaction space; 12-an air extraction motor; 121-connecting a pipeline; 13-a carrier tray; 131-bearing surface; 1311-a central region; 1313-peripheral area; 133-a heating unit; 135-linear actuator; 14-a substrate; 15-pumping ring; 151-annular outer wall; 152-annular channel; 153-annular inner wall; 154-exhaust holes; 155-bottom; 156-connecting holes; 157-a first annular chamfer; 159-annular boss; 17-ring heater; a 19-diffusion unit; 191-diffusion surface; 193-air intake holes; 195-a second annular ramp; g-spacing; p1-bleed path.
Detailed Description
Referring to FIG. 1, a schematic exploded view of a deposition apparatus for improving a substrate temperature distribution according to an embodiment of the invention is shown. As shown in the figure, the deposition apparatus 10 for improving the temperature distribution of a substrate mainly comprises a chamber 11, a carrier plate 13, a pumping ring 15, an annular heater 17 and a diffusion unit 19, wherein the chamber 11 comprises a receiving space 112 and a pumping channel 114, and the pumping channel 114 is located at the periphery of the receiving space 112. The carrying tray 13 is disposed in the accommodating space 112 and includes a carrying surface 131 for carrying at least one substrate 14.
In an embodiment of the present invention, the accommodating space 112 of the cavity 11 is approximately a cylinder, and the air pumping channel 114 is an annular or tubular body and is disposed around the outer side of the accommodating space 112. In another embodiment of the present invention, the accommodating space 112 may be a polygonal body, and the pumping channel 114 is a polygonal tubular body.
As shown in fig. 2, the pumping ring 15 is an annular body and includes an annular outer wall 151 and an annular inner wall 153, wherein the annular inner wall 153 is located inside the annular outer wall 151, and an annular channel 152 is formed between the annular outer wall 151 and the annular inner wall 153.
The annular inner wall 153 is provided with a plurality of air vents 154, wherein the air vents 154 are in fluid connection with the annular channel 152 and the accommodating space 112 of the cavity 11, and the air vents 154 are circumferentially arranged around the bearing surface 131 of the bearing disc 13. The bottom 155 of the pumping ring 15 is provided with at least one connection hole 156, for example, an angle between the connection hole 156 and the exhaust hole 154 is about 90 degrees, and when the pumping ring 15 is connected to the chamber 11, the connection hole 156 located at the bottom 155 is connected to the pumping channel 114. The annular channel 152 is connected to the pumping channel 114 via a connection hole 156 and to the receiving space 112 via an exhaust hole 154.
In one embodiment of the present invention, the pumping ring 15 may include an annular protrusion 159, wherein the annular protrusion 159 is connected to the annular inner wall 153 and protrudes from the annular inner wall 153 along the radially inner side of the pumping ring 15. Annular protrusion 159 is located below vent hole 154, and when carrier plate 13 is adjacent to pumping ring 15, the side of carrier plate 13 will be adjacent to annular protrusion 159 of pumping ring 15, such that carrier surface 131 is located radially inward of annular protrusion 159, and may direct gas above substrate 14 and/or carrier plate 13 to vent hole 154 via annular protrusion 159.
As shown in fig. 1 and 3, the carrying surface 131 of the carrying tray 13 may be defined as a central area 1311 and a peripheral area 1313, wherein the peripheral area 1313 surrounds the central area 1311, for example, the central area 1311 is circular, and the peripheral area 1313 is annular. The carrying tray 13 is connected to a heating unit 133, for example, the heating unit 133 may be a heating coil, where the heating unit 133 is located below the carrying surface 131 of the carrying tray 13 and is used to heat the substrate 14 carried by the carrying surface 131.
The arrangement density of the heating units 133 below the peripheral region 1313 is generally lower than that of the central region 1311, and the heating units 133 can heat the peripheral region 1313 of the susceptor 13 only from one side, for example, from the radially inner side toward the radially outer side of the susceptor surface 131, so that the peripheral region 1313 rises at a slower rate than the central region 1311.
In addition, the peripheral area 1313 of the bearing surface 131 is close to the side surface of the bearing disc 13, and the contact area with the accommodating space 112 is larger, so that the heat of the peripheral area 1313 is transferred to the accommodating space 112 at a faster speed, resulting in that the temperature of the peripheral area 1313 is lower than that of the central area 1311.
In order to solve the problem of lower temperature in the peripheral area 1313 of the carrier plate 13, the present invention further proposes to provide an annular heater 17, such as a heating coil, below the pumping ring 15, wherein the annular heater 17 is disposed around the peripheral area 1313 of the carrier plate 13 and is used to heat the peripheral area 1313 of the carrier plate 13, so that the temperatures of the central area 1311 and the peripheral area 1313 of the carrier plate 13 are similar.
When in setting, the annular heater 17 with proper size can be selected according to the area of the bearing surface 131 of the bearing disk 13, and the interval G between the bearing disk 13 and the annular heater 17 can be changed to adjust the efficiency of the annular heater 17 to heat the peripheral area 1313. For example, the inner edge of the ring heater 17 may be aligned with the inner edge of the annular ledge 159 of the pumping ring 15.
In one embodiment of the invention, the ring heater 17 and the pumping ring 15 may be two separate components, wherein the ring heater 17 may contact the bottom of the pumping ring 15. In another embodiment of the present invention, the ring heater 17 may be integrated inside the pumping ring 15 such that both are a single component, for example, the ring heater 17 may be integrated in the annular boss 159 of the pumping ring 15.
As shown in fig. 1, the chamber 11 may include an annular bearing portion 113 located inside the pumping channel 114, wherein the annular bearing portion 113 is an annular groove disposed on the chamber and is configured to bear the annular heater 17, and the pumping ring 15 is disposed on the annular heater 17.
The diffusion unit 19 includes a diffusion surface 191 and a plurality of air inlets 193, wherein when the diffusion unit 19 is connected to the cavity 11, the diffusion surface 191 and the air inlets 193 disposed on the diffusion surface 191 face the carrying surface 131 and/or the substrate 14 of the carrying tray 13. The air inlet 193 of the diffusion unit 19 is fluidly connected to the receiving space 112 and is configured to deliver a gas or precursor to the substrate 14.
As shown in fig. 1 and 2, the pumping ring 15 includes a first annular inclined surface 157, wherein the first annular inclined surface 157 is connected to the annular inner wall 153, is inclined with respect to an axis of the carrier plate 13 and the annular inner wall 153, and faces the diffusion unit 19. The diffusion unit 19 includes a second annular inclined surface 195 circumferentially disposed around the plurality of air intake holes 193, wherein the first annular inclined surface 157 and the second annular inclined surface 195 have the same inclination angle, and are used for aligning the diffusion unit 19 and the pumping ring 15.
As shown in fig. 4 and 5, the deposition apparatus 10 for improving the temperature distribution of a substrate according to the present invention may be operated in a feed-discharge state and a deposition state. The chamber 11 includes a substrate access port 111, wherein the substrate access port 111 is positioned below the pumping channel 114. In addition, the pumping channel 114 may be connected to a pumping motor 12 through a connection line 121, wherein the connection line 121 and the substrate inlet/outlet 111 face each other and are disposed at both sides of the chamber 11 or the pumping channel 114, respectively.
In an embodiment of the present invention, the height of the pumping channel 114 connected to the connection line 121 may be greater than the height of the pumping channel 114 above the substrate inlet 111. In addition, the arrangement density or the aperture of the connection holes 156 above the substrate access port 111 may be greater than the arrangement density or the aperture of the connection holes 156 above the connection line 121.
The carrier plate 13 may be connected to a linear actuator 135, such as a cylinder, wherein the linear actuator 135 is used to drive the carrier plate 13 towards or away from the diffuser unit 19. As shown in fig. 4, when the linear brake 135 drives the carrier plate 13 away from the diffusion unit 19 and cuts the inlet/outlet 111 of Ji Jiban, the substrate 14 can be conveyed to the carrying surface 131 of the carrier plate 13 through the substrate inlet/outlet 111 by a mechanical arm, or the substrate 14 carried by the carrier plate 13 can be conveyed to the outside of the cavity 11.
As shown in fig. 5, when the linear actuator 135 moves the carrier plate 13 toward the diffusion unit 19, the carrier plate 13 approaches the pumping ring 15, for example, there is only a small gap between the side surface of the carrier plate 13 and the pumping ring 15. The chamber 11, the carrier plate 13, the gas pumping ring 15 and/or the diffusion unit 19 partition a reaction space 116 in the accommodating space 112, and perform thin film deposition on the substrate 14 in the reaction space 116, wherein the annular heater 17 is located outside the reaction space 116.
During film deposition, the gas inlet 193 of the diffusion unit 19 is used to deliver gas and/or precursor to the reaction space 116, and forms a pumping path P1 through the gas outlet 154, the annular channel 152 and the pumping channel 114. The pumping path P1 is used to pump out the gas and/or the precursor in the reaction space 116 to form a stable and uniform flow field on the carrying surface 131 of the carrying disk 13 and the substrate 14.
Specifically, the ring heater 17 is independent of the reaction space 116 and/or the pumping path P1 during deposition, so that the gas conducted out of the reaction space 116 via the pumping path P1 does not directly contact the ring heater 17, thereby avoiding the heat of the ring heater 17 from being carried away by the flowing gas. The ring heater 17 can stably heat the peripheral region 1313 of the susceptor 13 and improve the temperature uniformity of the carrying surface 131 of the susceptor 13 and the substrate 14.
In addition, in the deposition state, the plurality of exhaust holes 154 of the exhaust ring 15 are disposed around the bearing surface 131 of the bearing plate 13, wherein the height of the exhaust holes 154 is slightly higher than or equal to the bearing surface 131 or is approximately equal to the upper surface of the substrate 14, so as to facilitate exhausting the gas in the reaction space 116 through the exhaust holes 154 and form a uniform and stable flow field on the surface of the substrate 14.
Fig. 6 is a state of the art temperature distribution diagram of the bearing surface of the bearing disc, wherein the temperature of the peripheral region 1313 of the bearing surface 131 is significantly lower than the temperature of the central region 1311, for example, when the temperature of the central region 1311 is increased between 538 and 545 degrees celsius, the temperature of the peripheral region 1313 is only increased between 526 and 533 degrees celsius. In comparison, fig. 7 is a temperature distribution diagram of the bearing surface of the bearing disc according to the present invention, it is obvious that the arrangement of the pumping ring 15 and the ring heater 17 can effectively increase the temperature of the peripheral region 1313 of the bearing surface 131, so that the temperature of the peripheral region 1313 is similar to the temperature of the central region 1311, for example, when the temperature of the central region 1311 is increased to between 538 and 545 degrees celsius, the temperature of the peripheral region 1313 is also increased to between 533 and 538 degrees celsius. In this way, the carrying tray 13 can uniformly heat the carried substrate 14, so that the temperature of the whole substrate 14 is more uniform, and a thin film with uniform thickness is formed on the surface of the substrate 14.
The foregoing description is only one preferred embodiment of the present invention and is not intended to limit the scope of the invention, i.e., all equivalent variations and modifications in shape, construction, characteristics and spirit as defined in the claims are intended to be included in the scope of the present invention.
The invention has the advantages that:
the novel deposition machine for improving the temperature distribution of the substrate can form a uniform and stable flow field above the substrate and the bearing plate, and can greatly improve the uniformity of the temperature of the substrate so as to be beneficial to forming a film with uniform thickness on the surface of the substrate.
The foregoing description is only a preferred embodiment of the present invention and is not intended to limit the scope of the invention, i.e., all equivalent variations and modifications in shape, construction, characteristics and spirit as defined in the claims should be embraced by the claims.

Claims (10)

1. A deposition tool for improving a temperature profile of a substrate, comprising:
the cavity comprises a containing space and an air suction channel, and the air suction channel is positioned at the periphery of the containing space;
the bearing plate is positioned in the accommodating space and comprises a bearing surface for bearing at least one substrate, wherein the bearing surface comprises a central area and a peripheral area, and the peripheral area surrounds the outer side of the central area;
the heating unit is connected with the bearing disc and used for heating the substrate borne by the bearing surface;
the annular inner wall is positioned at the inner side of the annular outer wall, a plurality of exhaust holes are formed in the annular inner wall and are circumferentially arranged around the bearing surface of the bearing disc, an annular channel is arranged between the annular outer wall and the annular inner wall, and the annular channel is in fluid connection with the exhaust channel and the exhaust holes of the cavity;
the diffusion unit comprises a plurality of air inlets facing the bearing surface of the bearing plate, wherein a reaction space is defined by the diffusion unit, the bearing plate and the air pumping ring in the accommodating space, and the air inlets of the diffusion unit convey at least one precursor to the reaction space and to the air pumping channel through the air outlet and the annular channel; and
And the annular heater is positioned below the air suction ring, surrounds the peripheral area of the bearing plate and is used for heating the peripheral area of the bearing plate, wherein the annular heater is positioned outside the reaction space.
2. The deposition tool of claim 1, wherein the ring heater is integrated within the pumping ring.
3. The deposition tool of claim 1, wherein the chamber comprises an annular carrier positioned inside the pumping channel, the annular carrier configured to carry the annular heater, and the exhaust ring disposed on the annular heater.
4. The deposition tool of claim 1, comprising a substrate port below the pumping channel, and a connecting line connected to the pumping channel.
5. The deposition tool of claim 4, wherein the height of the pumping channel connected by the connecting line is greater than the height of the pumping channel above the substrate port.
6. The deposition tool of claim 4, wherein the pumping ring comprises one or more connecting holes, the annular channel of the pumping ring is connected to the pumping channel of the chamber via the connecting holes, wherein the arrangement density or aperture of the connecting holes above the substrate inlet and outlet is greater than the arrangement density or aperture of the connecting holes above the connecting line.
7. The deposition tool of claim 4, wherein the carrier plate is coupled to a linear actuator and is driven by the linear actuator to move closer to or farther from the diffusion unit, wherein the carrier plate moves closer to the diffusion unit and defines the reaction space.
8. The deposition tool of claim 1, wherein the exhaust port of the pumping ring, the annular channel, and the pumping channel form a pumping path through which the precursor in the reaction space is pumped, and the annular heater is independent of the pumping path.
9. The deposition tool of claim 1, wherein the pumping ring comprises a first annular bevel inclined with respect to an axis of the carrier plate and facing the diffusion unit, the diffusion unit comprising a second annular bevel disposed around the plurality of gas inlets, wherein the first annular bevel and the second annular bevel have the same inclination angle and are aligned with the diffusion unit and the pumping ring.
10. The deposition tool of claim 1, wherein the pumping ring comprises an annular protrusion connected to the annular inner wall and below the exhaust hole.
CN202111600672.2A 2021-12-24 2021-12-24 Deposition machine for improving substrate temperature distribution Pending CN116334587A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202111600672.2A CN116334587A (en) 2021-12-24 2021-12-24 Deposition machine for improving substrate temperature distribution

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202111600672.2A CN116334587A (en) 2021-12-24 2021-12-24 Deposition machine for improving substrate temperature distribution

Publications (1)

Publication Number Publication Date
CN116334587A true CN116334587A (en) 2023-06-27

Family

ID=86879460

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202111600672.2A Pending CN116334587A (en) 2021-12-24 2021-12-24 Deposition machine for improving substrate temperature distribution

Country Status (1)

Country Link
CN (1) CN116334587A (en)

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