TWI775661B - Showerhead assembly and thin-film-deposition equipment using the same - Google Patents
Showerhead assembly and thin-film-deposition equipment using the same Download PDFInfo
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本發明有關於一種噴灑裝置及其薄膜沉積設備,可用以在噴灑裝置的下方輸出分布均勻及濃度相近的兩種前驅物。The present invention relates to a spraying device and its thin film deposition equipment, which can be used to output two precursors with uniform distribution and similar concentration below the spraying device.
隨著積體電路技術的不斷進步,目前電子產品朝向輕薄短小、高性能、高可靠性與智能化的趨勢發展。電子產品中電晶體的微縮技術至關重要,隨著電晶體的尺寸縮小,可減少電流傳輸時間及降低耗能,以達到快速運算及節能的目的。在現今微小化的電晶體中,部分關鍵的薄膜幾乎僅有幾個原子的厚度,而原子層沉積製程則是發展這些微量結構的主要技術之一。With the continuous advancement of integrated circuit technology, electronic products are currently developing towards the trend of light, thin, short, high performance, high reliability and intelligence. The scaling technology of transistors in electronic products is very important. As the size of transistors shrinks, the current transmission time and energy consumption can be reduced, so as to achieve the purpose of fast computing and energy saving. In today's miniaturized transistors, some key thin films are almost only a few atoms thick, and atomic layer deposition is one of the main techniques for developing these microstructures.
原子層沉積製程是一種將物質以單原子的形式一層一層地鍍於基板表面的技術,原子層沉積的主要反應物有兩種化學物質,通常被稱作前驅物,並將兩種前驅物依序傳送至反應空間內。The atomic layer deposition process is a technology of depositing substances on the surface of a substrate layer by layer in the form of single atoms. The main reactants of atomic layer deposition are two chemical substances, usually called precursors, and the two precursors are combined according to each other. sequence is transferred to the reaction space.
具體而言,先將第一前驅物輸送至反應空間內,使得第一前驅物被導引至基板表面,化學吸附的過程直至表面飽和時就自動終止。將清潔氣體輸送至反應空間內,並抽出反應空間內的氣體,以去除反應空間內殘餘的第一前驅物。將第二前驅物注入反應空間,使得第二前驅物與化學吸附於基板表面的第一前驅物反應生成所需薄膜,反應的過程直至吸附於基板表面的第一前驅物反應完成為止。之後再將清潔氣體注入反應空間,以去除反應空間內殘餘的第二前驅物。透過上述步驟的反覆進行,並可在基板上形成薄膜。Specifically, the first precursor is firstly transported into the reaction space, so that the first precursor is guided to the surface of the substrate, and the process of chemical adsorption is automatically terminated when the surface is saturated. The cleaning gas is delivered into the reaction space, and the gas in the reaction space is drawn out, so as to remove the residual first precursor in the reaction space. The second precursor is injected into the reaction space, so that the second precursor reacts with the first precursor chemically adsorbed on the substrate surface to form the desired film, and the reaction process is completed until the reaction of the first precursor adsorbed on the substrate surface is completed. Then, the cleaning gas is injected into the reaction space to remove the residual second precursor in the reaction space. By repeating the above steps, a thin film can be formed on the substrate.
在實際應用時,反應空間內前驅物的均勻分布,以及基板的溫度都會對原子層沉積的薄膜均勻度造成相當大的影響,為此各大製程設備廠莫不極盡所能的改善噴灑裝置,以提高原子層沉積製程的品質。In practical applications, the uniform distribution of the precursors in the reaction space and the temperature of the substrate will have a considerable impact on the uniformity of the ALD film. To improve the quality of atomic layer deposition process.
如先前技術所述,習用的噴灑裝置往往無法使得前驅物均勻的分布在基板上,而影響沉積在基板表面的薄膜品質。為此本發明提出一種新穎的噴灑裝置及應用該噴灑裝置的薄膜沉積設備,可以在基板及或承載盤的上方形成均勻分布的前驅物,以利於在基板的表面形成厚度均勻的薄膜。As described in the prior art, conventional spraying devices often cannot make the precursor evenly distributed on the substrate, which affects the quality of the thin film deposited on the surface of the substrate. To this end, the present invention proposes a novel spraying device and a thin film deposition device using the spraying device, which can form uniformly distributed precursors on the substrate and/or the carrier plate, so as to facilitate the formation of a thin film with uniform thickness on the surface of the substrate.
本發明的一目的,在於提出一種噴灑裝置包括一擴散單元及一環形擴散單元,其中環形擴散單元設置在擴散單元的周圍。擴散單元包括複數個第一進氣管及複數個第二進氣管,並分別經由第一及第二進氣管將第一前驅物及第二前驅物輸送至擴散單元的下方。An object of the present invention is to provide a spraying device comprising a diffusing unit and an annular diffusing unit, wherein the annular diffusing unit is arranged around the diffusing unit. The diffusion unit includes a plurality of first air intake pipes and a plurality of second air intake pipes, and respectively transports the first precursor and the second precursor to the lower part of the diffusion unit through the first and second air intake pipes.
環形擴散單元包括一第一環形輸送管線及複數個第三進氣管,其中第一環形輸送管線連接第三進氣管,並經由第三進氣管將第二前驅物輸送至擴散單元的下方,以提高擴散單元下方的第二前驅物的總量或濃度。此外第三進氣管可相對於擴散單元的底表面傾斜,以利於第三進氣管將第二前驅物輸送至擴散單元的下方。The annular diffusion unit includes a first annular conveying line and a plurality of third air intake pipes, wherein the first annular conveying line is connected to the third air intake pipe, and the second precursor is conveyed to the diffusion unit through the third air intake pipe to increase the total amount or concentration of the second precursor under the diffusion unit. In addition, the third air inlet pipe may be inclined relative to the bottom surface of the diffusion unit, so as to facilitate the third air inlet pipe to deliver the second precursor to the lower part of the diffusion unit.
此外環形擴散單元上可進一步設置一第二環形輸送管線及複數個第四進氣管,其中第二環形輸送管線位於第一環形輸送管線的徑向外側,並流體連接第四進氣管。第二環形輸送管線可經由第四進氣管將一非反應氣體輸送至擴散單元的周圍,以在擴散單元的下方周圍形成一氣牆,並透過氣牆限制第一及第二前驅物的流動或擴散範圍。In addition, the annular diffusion unit may be further provided with a second annular conveying line and a plurality of fourth air intake pipes, wherein the second annular conveying line is located radially outside the first annular conveying line and is fluidly connected to the fourth air intake pipes. The second annular conveying line can convey a non-reactive gas to the periphery of the diffusion unit through the fourth gas inlet pipe, so as to form a gas wall around the lower part of the diffusion unit, and restrict the flow of the first and second precursors through the gas wall or Diffusion range.
噴灑裝置的擴散單元包括一第一擴散板、一第二擴散板及一第三擴散板的層疊,其中第二擴散板位於第一及第三擴散板之間。第一進氣管貫穿第一、第二及第三擴散板,而第二進氣管則貫穿第三擴散板,並連接第二擴散板上的至少一擴散空間。此外第一及第二擴散板上可進一步設置至少冷卻流體通道,以降低擴散單元的溫度。The diffusing unit of the spraying device includes a stack of a first diffusing plate, a second diffusing plate and a third diffusing plate, wherein the second diffusing plate is located between the first and third diffusing plates. The first air intake pipe penetrates through the first, second and third diffuser plates, and the second air intake pipe penetrates through the third diffuser plate and is connected to at least one diffusion space on the second diffuser plate. In addition, at least cooling fluid passages may be further provided on the first and second diffuser plates to reduce the temperature of the diffuser unit.
本發明的一目的,在於提出一種薄膜沉積設備,主要包括一腔體、一噴灑裝置及一承載盤,其中承載盤位於腔體的一容置空間內,而噴灑裝置則流體連接腔體的容置空間。承載盤包括一承載面用以承載至少一晶圓,噴灑裝置面對承載盤,並用以將第一及第二前驅物輸送至晶圓上方的反應空間。An object of the present invention is to provide a thin film deposition apparatus, which mainly includes a cavity, a spraying device and a carrying plate, wherein the carrying plate is located in an accommodating space of the cavity, and the spraying device is fluidly connected to the cavity of the cavity. set space. The carrier tray includes a carrier surface for carrying at least one wafer, and the spraying device faces the carrier tray and is used for delivering the first and second precursors to the reaction space above the wafer.
噴灑裝置包括一擴散單元及一環形擴散單元,其中擴散單元輸出第一前驅物的速率大於第二前驅物。環形擴散單元設置在擴散單元周圍,其中環形擴散單元的第三進氣管朝向承載面,並用以將第二前驅物輸送至承載盤及晶圓的上方,以提高承載盤及晶圓上方的第二前驅物的濃度,並有利於在晶圓的表面形成厚度均勻的薄膜。The spraying device includes a diffusing unit and an annular diffusing unit, wherein the diffusing unit outputs the first precursor at a rate greater than that of the second precursor. The annular diffusing unit is arranged around the diffusing unit, wherein the third air inlet pipe of the annular diffusing unit faces the bearing surface, and is used to transport the second precursor to the top of the carrier tray and the wafer, so as to improve the first air flow above the carrier tray and the wafer. The concentration of the two precursors is favorable for forming a thin film with uniform thickness on the surface of the wafer.
為了達到上述的目的,本發明提出一種噴灑裝置,包括:至少一第一輸送管線,用以輸送一第一前驅物;至少一第二輸送管線,用以輸送一第二前驅物;一擴散單元,包括複數個第一進氣管及複數個第二進氣管,其中複數個第一進氣管流體連接第一輸送管線,並用以將第一前驅物輸送至擴散單元的下方,而複數個第二進氣管流體連接第二輸送管線,並用以將第二前驅物輸送至擴散單元的下方;及一環形擴散單元,設置在擴散單元的周圍,並位於擴散單元的下方,環形擴散單元包括至少一第一環形輸送管線及複數個第三進氣管,其中第一環形輸送管線流體連接複數第三進氣管,第一環形輸送管線經由第三進氣管將第二前驅物輸送至擴散單元的下方。In order to achieve the above purpose, the present invention provides a spraying device, comprising: at least one first conveying line for conveying a first precursor; at least one second conveying line for conveying a second precursor; a diffusing unit , including a plurality of first air intake pipes and a plurality of second air intake pipes, wherein the plurality of first air intake pipes are fluidly connected to the first conveying pipeline, and are used to transport the first precursor to the bottom of the diffusion unit, and the plurality of The second air inlet pipe is fluidly connected to the second conveying line, and is used for conveying the second precursor to the lower part of the diffusing unit; and an annular diffusing unit is arranged around the diffusing unit and located below the diffusing unit, and the annular diffusing unit includes At least one first annular conveying line and a plurality of third air intake pipes, wherein the first annular conveying line is fluidly connected to a plurality of third air intake pipes, and the first annular conveying line transfers the second precursor through the third air intake pipes. delivered to the bottom of the diffusion unit.
本發明提供一種薄膜沉積設備,包括:一腔體,包括一容置空間;一噴灑裝置,流體連接容置空間,包括:至少一第一輸送管線,用以輸送一第一前驅物;至少一第二輸送管線,用以輸送一第二前驅物;一擴散單元,包括複數個第一進氣管及複數個第二進氣管,其中複數個第一進氣管流體連接第一輸送管線及容置空間,並用以將第一前驅物輸送至容置空間,而複數個第二進氣管流體連接第二輸送管線及容置空間,並用以將第二前驅物輸送至容置空間;及一環形擴散單元,設置在擴散單元的周圍,並位於擴散單元的下方,環形擴散單元包括一第一環形輸送管線及複數個第三進氣管,其中複數第三進氣管流體連接第一環形輸送管線及容置空間,第一環形輸送管線經由第三進氣管將第二前驅物輸送至容置空間;一承載盤,位於容置空間內,面對噴灑裝置,並用以承載至少一晶圓。The invention provides a thin film deposition equipment, comprising: a cavity, including an accommodating space; a spraying device, fluidly connected to the accommodating space, including: at least one first conveying pipeline for conveying a first precursor; at least one The second conveying line is used to convey a second precursor; a diffusion unit includes a plurality of first air intake pipes and a plurality of second air intake pipes, wherein the plurality of first air intake pipes are fluidly connected to the first conveying line and the an accommodating space for transporting the first precursor to the accommodating space, and a plurality of second air intake pipes are fluidly connected to the second transport pipeline and the accommodating space, and used for transporting the second precursor to the accommodating space; and An annular diffuser unit is arranged around the diffuser unit and located below the diffuser unit. The annular diffuser unit includes a first annular conveying pipeline and a plurality of third air intake pipes, wherein the plurality of third air intake pipes are fluidly connected to the first The annular conveying pipeline and the accommodating space, the first annular conveying pipeline conveys the second precursor to the accommodating space through the third air inlet pipe; a carrying tray is located in the accommodating space, faces the spraying device, and is used to carry the at least one wafer.
所述的噴灑裝置及薄膜沉積設備,其中環形擴散單元包括一第二環形輸送管線及複數個第四進氣管,第二環形輸送管線環繞設置在第一環形輸送管線的周圍,而複數個第四進氣管則流體連接第二環形輸送管線,第二環形輸送管線用以將一非反應氣體輸送至複數個第四進氣管。The spraying device and the film deposition equipment, wherein the annular diffusion unit includes a second annular conveying line and a plurality of fourth air inlet pipes, the second annular conveying line is arranged around the first annular conveying line, and a plurality of The fourth air inlet pipe is fluidly connected to the second annular conveying line, and the second annular conveying line is used for conveying a non-reactive gas to the plurality of fourth air inlet pipes.
所述的噴灑裝置及薄膜沉積設備,其中第三進氣管朝向第一進氣管或第二進氣管的延伸方向,並相對於第一進氣管或第二進氣管傾斜,而第四進氣管則平行第一進氣管或第二進氣管。The spraying device and the film deposition equipment, wherein the third air inlet pipe faces the extending direction of the first air inlet pipe or the second air inlet pipe, and is inclined relative to the first air inlet pipe or the second air inlet pipe, and the third air inlet pipe is inclined. The four intake pipes are parallel to the first intake pipe or the second intake pipe.
所述的噴灑裝置及薄膜沉積設備,其中第一輸送管線的截面積大於第二輸送管線,且第二輸送管線設置在第一輸送管線內部。In the spraying device and the thin film deposition equipment, the cross-sectional area of the first conveying line is larger than that of the second conveying line, and the second conveying line is arranged inside the first conveying line.
所述的噴灑裝置及薄膜沉積設備,其中第一輸送管線包括一第一管部、一第二管部及一延伸管線,第一管部經由第二管部連接擴散單元,其中第二管部的截面積大於第一管部,而延伸管線則設置在第一管部及部分第二管部內,並於第一管部及第二管部上纏繞設置一線圈。The spraying device and the thin film deposition equipment, wherein the first conveying pipeline comprises a first pipe part, a second pipe part and an extension pipeline, the first pipe part is connected to the diffusion unit through the second pipe part, wherein the second pipe part The cross-sectional area of the pipe is larger than that of the first pipe part, and the extension pipeline is arranged in the first pipe part and part of the second pipe part, and a coil is wound on the first pipe part and the second pipe part.
所述的噴灑裝置及薄膜沉積設備,其中擴散單元包括:一第一擴散板,第一進氣管貫穿第一擴散板;一第二擴散板,包括至少一擴散空間,其中第一進氣管貫穿第二擴散板;至少一冷卻管線,設置在第一擴散板或第二擴散板內部;及一第三擴散板,第一進氣管及第二進氣管貫穿第三擴散板,其中第一擴散板、第二擴散板及第三擴散板層疊設置,且第二擴散板位於第一擴散板及第三擴散板之間,其中第一擴散板、第二擴散板及第三擴散板上的第一進氣管相連通,而第三擴散板的第二進氣管則連接第二擴散板的擴散空間。The spraying device and the film deposition equipment, wherein the diffusing unit includes: a first diffusing plate, the first air intake pipe runs through the first diffusing plate; a second diffusing plate, including at least one diffusing space, wherein the first intake pipe runs through the second diffuser plate; at least one cooling pipeline is arranged inside the first diffuser plate or the second diffuser plate; and a third diffuser plate, the first air intake pipe and the second air intake pipe pass through the third diffuser plate, wherein the first A diffuser plate, a second diffuser plate and a third diffuser plate are stacked, and the second diffuser plate is located between the first diffuser plate and the third diffuser plate, wherein the first diffuser plate, the second diffuser plate and the third diffuser plate The first air intake pipe of the third diffuser is connected to the diffuser space of the second diffuser.
請參閱圖1,為本發明噴灑裝置一實施例的剖面示意圖。如圖所示,噴灑裝置10主要包括至少一第一輸送管線11、至少一第二輸送管線13、一擴散單元15及一環形擴散單元17,其中第一輸送管線11及第二輸送管線13流體連接擴散單元15,而環形擴散單元17則環繞設置在擴散單元15周圍。Please refer to FIG. 1 , which is a schematic cross-sectional view of an embodiment of the spraying device of the present invention. As shown in the figure, the spraying
擴散單元15包括複數個第一進氣管152及複數個第二進氣管154,其中第一進氣管152流體連接第一輸送管線11,而第二進氣管154則流體連接第二輸送管線13。The diffusing
在實際應用時第一輸送管線11可用以將一第一前驅物及/或一清洗氣體輸送至第一進氣管152,並經由第一進氣管152將第一前驅物及/或清洗氣體輸送至擴散單元15的下方。第二輸送管線13用以將一第二前驅物及/或一清洗氣體輸送至第二進氣管154,並經由第二進氣管154將第二前驅物及/或清洗氣體輸送至擴散單元15的下方。In practical applications, the
為了方便說明,本發明所述的第一前驅物包括第一前驅物氣體或第一前驅物的電漿,而第二前驅物包括第二前驅物氣體或第二前驅物的電漿。For the convenience of description, the first precursor in the present invention includes the first precursor gas or the plasma of the first precursor, and the second precursor includes the second precursor gas or the plasma of the second precursor.
在本發明一實施例中,擴散單元15可以是複數層的結構,如圖2至圖4所示,並包括一第一擴散板151、一第二擴散板153及一第三擴散板155,其中第一、第二及第三擴散板151/153/155層疊設置,且第二擴散板153位於第一及第三擴散板151/155之間。In an embodiment of the present invention, the
第一、第二及第三擴散板151/153/155上分別設置部分的第一進氣管152,其中第一進氣管152貫穿第一、第二及第三擴散板151/153/155。當第一、第二及第三擴散板151/153/155層疊設置時,第一、第二及第三擴散板151/153/155上的第一進氣管152相互對準並連接,其中第一進氣管152會貫穿層疊設置的第一、第二及第三擴散板151/153/155,使得第一前驅物及/或清洗氣體可經由第一進氣管152由擴散單元15的上表面傳輸至下表面。The first, second and
第二擴散板153還包括至少一擴散空間156,而第二進氣管154則設置在第三擴散板155上,其中第二進氣管154貫穿第三擴散板155。具體而言,如圖4所示,第二擴散板153的下表面可設置一環形凸緣1531及複數個凸部1533,其中環形凸緣1531設置在第二擴散板153的下表面周圍,而凸部1533則位於環形凸緣1531的內側。環形凸緣1531及凸部1533用以在第二擴散板153的下表面定義出擴散空間156,其中第一進氣管152設置在凸部1533上或貫穿凸部1533。The
當第二及第三擴散板153/155相連接時,第二擴散板153的擴散空間156會流體連接第三擴散板155的第二進氣管154,其中擴散空間156內的氣體會經由第二進氣管154輸送至擴散單元15的下方。在本發明另一實施例中,亦可將凸部1533、擴散空間156設置在第三擴散板155朝向第二擴散板153的表面。When the second and
上述擴散單元15包括三層的擴散板僅為本發明一實施例,並非本發明權利範圍的限制。在實際應用時亦可將第一擴散板151及第二擴散板153整合為單一層的第四擴散板157,如圖5所示,直接在第四擴散板157上設置複數個第一進氣管152,並於單層的第四擴散板157的下表面設置擴散空間156,其中擴散空間156及第一進氣管152未流體連接。此外亦可於第四擴散板157上設置至少一冷卻管線。The above-mentioned
在本發明一實施例中,第一及第二輸送管線11/13為管體,其中第二輸送管線13的管徑及截面積大於第一輸送管線11,並可將第二輸送管線13設置在第一輸送管線11內部。In an embodiment of the present invention, the first and
如圖1所示,第一輸送管線11的一端或上部可設置一擴散板113,而另一端或底部包括一擴張部111,其中擴散板113上可設置複數個穿孔1131,並經由擴散板113的穿孔1131將第一前驅物輸送至第一輸送管線11內,而擴張部111的面積朝第一輸送管線11的一端逐漸擴張,例如擴張部111可為喇叭狀或截頂圓錐狀。第一輸送管線11經由擴張部111連接擴散單元15,其中擴張部111覆蓋擴散單元15上的複數個第一進氣管152,使得第一輸送管線11可將第一前驅物及/或清洗氣體輸送至擴散單元15的第一進氣管152。As shown in FIG. 1 , a
在本發明一實施例中,第一輸送管線11的截面積大於第二輸送管線13,其中第一輸送管線11傳輸第一前驅物的速率會大於第二輸送管線13傳輸第二前驅物的速率。In an embodiment of the present invention, the cross-sectional area of the first conveying
具體而言,第二輸送管線13可穿過擴散板113,沿著第一輸送管線11的軸向設置,並貫穿第一擴散板151,其中第二輸送管線13連接擴散單元15內的擴散空間156。在實際應用時,第二輸送管線13可將第二前驅物及/或清潔氣體輸送至擴散空間156,並經由擴散空間156輸送至第二進氣管154。Specifically, the second conveying
環形擴散單元17為環狀體,其中環形擴散單元17位於擴散單元15的下方。環形擴散單元17包括至少一第一環形輸送管線171及複數個第三進氣管172,其中第一環形輸送管線171流體連接第三進氣管172,並經由第三進氣管172將第二前驅物輸送至擴散單元15的下方。例如擴散單元15的剖面可為圓形,而環形擴散單元17的複數個第三進氣管172則朝向擴散單元15的軸心或圓心的延伸線。The
第二輸送管線13的孔徑及/或截面積小於第一輸送管線11,使得第二輸送管線13輸送第二前驅物的速率可能會小於第一輸送管線11輸送第一前驅物。此外第二輸送管線13會先將二前驅物輸送至擴散空間156,並經由擴散空間156輸送至第二進氣管154。The pore size and/or cross-sectional area of the
如上述的內容,擴散單元15將第二前驅物輸送至下方的速率可能會小於第一前驅物,使得擴散單元15下方的第二前驅物的濃度可能會小於第一前驅物,或者是擴散單元15需要較長的時間才能將等量或相同濃度的第二前驅物輸送至下方的空間。As mentioned above, the rate at which the
在實際應用時,第一前驅物及第二前驅物可能會具有不同的黏滯性或流動性,使得輸送至擴散單元15下方的第一前驅物及第二前驅物的均勻度不同。例如當第一前驅物的黏滯性低於第二前驅物時,第一前驅物在較短的時間內,便可以均勻分布在擴散單元15下方。相較之下,黏滯性較高的第二前驅物便無法快速的傳送至擴散單元15的邊緣區域,使得擴散單元15邊緣區域上的第二前驅物濃度較中央區域低。In practical applications, the first precursor and the second precursor may have different viscosities or fluidities, so that the uniformity of the first precursor and the second precursor delivered under the
為此本發明提出將環形擴散單元17設置在擴散單元15的周圍及/或下方,並透過環形擴散單元17的第一環形輸送管線171及第三進氣管172將第二前驅物輸送至擴散單元15的下方,以提高擴散單元15下方的第二前驅物的濃度及/或均勻度,使得擴散單元15的邊緣區域及中央區域上的第二前驅物的濃度相近。To this end, the present invention proposes to dispose the
在本發明一實施例中,環形擴散單元17的第三進氣管172可以朝向擴散單元15的下方,以利於透過第三進氣管172將第二前驅物輸送至擴散單元15的下方。具體而言,第三進氣管172可朝向第一進氣管152及/或第二進氣管154的延伸方向,並相對於擴散單元15的第一進氣管152及/或第二進氣管154的延伸方向傾斜,例如第三進氣管172與擴散單元15的第一進氣管152及/或第二進氣管154之間的夾角介於0度90度之間。In an embodiment of the present invention, the third
在本發明另一實施例中,環形擴散單元17可包括一第二環形輸送管線173及複數個第四進氣管174,其中第二環形輸送管線173設置在第一環形輸送管線171的周圍、外側或徑向外側。第二環形輸送管線173流體連接第四進氣管174,經由第四進氣管174將一非反應氣體輸送至擴散單元15的下方周圍,並在擴散單元15的下方周圍形成氣牆,以限制第一前驅物、第二前驅物及/或清潔氣體的流動或擴散區域。例如環形擴散單元17的第四進氣管174約略與第一進氣管152及/或第二進氣管154平行。In another embodiment of the present invention, the
在本發明一實施例中,可進一步在第一輸送管線11上設置至少一線圈19,其中部分的第一輸送管線11及部分的第二輸送管線13位於線圈19的徑向內側。在實際應用時線圈19可連接一交流電源或射頻電源,用以將一交流訊號或射頻訊號傳輸至線圈19,使得第一及第二輸送管線11/13輸送的第一前驅物氣體及第二前驅物氣體成為電漿。In an embodiment of the present invention, at least one
在本發明另一實施例中,如圖6所示,為本發明應用噴灑裝置10的薄膜沉積設備一實施例的剖面示意圖,本發明上述實施例所述的噴灑裝置10可應用在薄膜沉積設備20,例如原子層沉積腔體。In another embodiment of the present invention, as shown in FIG. 6 , it is a schematic cross-sectional view of an embodiment of a thin film deposition apparatus using the
薄膜沉積設備20包括一腔體21、一噴灑裝置10及一承載盤23,其中腔體21包括一容置空間22。噴灑裝置10流體連接腔體21的容置空間22,並將第一前驅物、第二前驅物或清潔氣體輸送至腔體21的容置空間22。The thin
承載盤23位於腔體21的容置空間22內,並面對噴灑裝置10。承載盤23用以承載至少一晶圓25,其中第一進氣管152流體連接第一輸送管線11及容置空間22,使得噴灑裝置10可經由第一進氣管152將第一前驅物輸送至容置空間22內,而第二進氣管154則流體連接第二輸送管線13及容置空間22,使得噴灑裝置10可經由第二進氣管154將第二前驅物輸送至容置空間22內,以在晶圓25的表面沉積薄膜。The
環形擴散單元17的第三進氣管172流體連接第一環形輸送管線171及容置空間22,其中第三進氣管172朝向晶圓25及/或承載盤23,使得第一環形輸送管線171經由第三進氣管172將第二前驅物輸送至容置空間22內。The third
此外環形擴散單元17的第二環形輸送管線173設置在第一環形輸送管線171的周圍,而第四進氣管174則流體連接第二環形輸送管線173及容置空間22。第二環形輸送管線173經由第四進氣管174將一非反應氣體輸送至容置空間22,並在擴散單元15的下方周圍及/或承載盤23的周圍形成氣牆,以限制第一前驅物、第二前驅物及/或清潔氣體的流動或擴散區域。In addition, the second annular conveying
請參閱圖7,為本發明噴灑裝置又一實施例的剖面示意圖。如圖所示,噴灑裝置30主要包括至少一第一輸送管線31、至少一第二輸送管線33、一擴散單元35及一環形擴散單元17,其中第一輸送管線31及第二輸送管線33流體連接擴散單元35,而環形擴散單元17則環繞設置在擴散單元35周圍。Please refer to FIG. 7 , which is a schematic cross-sectional view of another embodiment of the spraying device of the present invention. As shown in the figure, the spraying
本發明實施例的噴灑裝置30與上一實施例的噴灑裝置10相近,主要的差異在於本實施例的噴灑裝置30的第二輸送管線33非設置在第一輸送管線31的內部,其中第二輸送管線33連接擴散單元35的側邊,並將第二前驅物輸送至擴散單元35的擴散空間356。The spraying
此外本發明所述的第一輸送管線31可包括一第一管部311及一第二管部313,其中第一管部311的截面積小於第二管部313。第一管部311經由第二管部313連接擴散單元35,其中第二管部313覆蓋擴散單元35上的複數個第一進氣管352,使得第一輸送管線31可將第一前驅物輸送至擴散單元35的第一進氣管352。In addition, the first conveying
第一管部311及第二管部313的外側可分別設置一線圈39,使得第一氣體送管線31內的第一前驅物成為電漿。A
在本發明一實施例中,第一輸送管線31內可設置一延伸管線315,其中延伸管線315可貫穿第一管部311並延伸至部份的第二管部313。延伸管線315的側表面或端部可設置至少一出氣孔3151,並經由出氣孔3151將第一前驅物輸送至第一輸送管線31內部的空間。In an embodiment of the present invention, an
本發明實施例的擴散單元35與上一實施例的擴散單元15的構造相近,可以是類似圖2的三層結構,例如第一、第二及第三擴散板351/353/355的層疊,亦可以是類似圖5的兩層結構。兩者主要的差異在於,本實施例的擴散單元35的第二擴散板353包括第二輸送管線33,如圖9所示,例如可將第二輸送管線33設置在第二擴散板353內部。第二輸送管線33流體連接第二擴散板353的擴散空間356,並用以將第二前驅物或第二前驅物的電漿輸送至擴散空間356。擴散空間356流體連接第二進氣管354,使得擴散空間356內的氣體會經由第二進氣管354輸送至擴散單元35下方。The
此外第二擴散板353亦可包括至少一冷卻管線3535,其中冷卻管線3535設置在第一擴散板351或第二擴散板353的內部。冷卻管線3535與第二輸送管線33及第一進氣管352未連體連接,其中冷卻管線3535用以輸送一冷卻流體,並用以降低擴散單元35的溫度。在實際應用時可於第二擴散板353的上表面設置複數個凹槽,並封閉凹槽以在第二擴散版353內部形成第二輸送管線33及冷卻管線3535。In addition, the
本發明應用噴灑裝置30同樣可以應用在薄膜沉積設備上,如圖8所示,薄膜沉積設備40可以是原子層沉積腔體,並包括一腔體21、一噴灑裝置30及一承載盤23。噴灑裝置30流體連接腔體21的容置空間22,並將第一前驅物、第二前驅物或兩者的電漿輸送至腔體21的容置空間22。The application of the
在本發明一實施例中,如圖10所示,第一輸送管線31為空心柱狀體,並於第一輸送管線31的頂部設置一擴散板317。擴散板317包括複數個穿孔3171,並經由擴散板317的穿孔3171將第一前驅物輸送至第一輸送管線31內,再經由第一輸送管線31輸送至擴散單元15。In an embodiment of the present invention, as shown in FIG. 10 , the first conveying
在本發明另一實施例中,如圖11所示,第一輸送管線31的頂部可設置一蓋板319,並於蓋板319上設置一延伸管線315,其中延伸管線315穿過蓋板319,並連接第一輸送管線31的內部空間。延伸管線315的側表面或端部可設置至少一出氣孔3151,並經由出氣孔3151將第一前驅物輸送至第一輸送管線31內部的空間,再經由第一輸送管線31輸送至擴散單元15。In another embodiment of the present invention, as shown in FIG. 11 , a
以上所述者,僅為本發明之一較佳實施例而已,並非用來限定本發明實施之範圍,即凡依本發明申請專利範圍所述之形狀、構造、特徵及精神所為之均等變化與修飾,均應包括於本發明之申請專利範圍內。The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Modifications should be included within the scope of the patent application of the present invention.
10:噴灑裝置 11:第一輸送管線 111:擴張部 113:擴散板 1131:穿孔 13:第二輸送管線 15:擴散單元 151:第一擴散板 152:第一進氣管 153:第二擴散板 1531:環形凸緣 1533:凸部 154:第二進氣管 155:第三擴散板 156:擴散空間 157:第四擴散板 17:環形擴散單元 171:第一環形輸送管線 172:第三進氣管 173:第二環形輸送管線 174:第四進氣管 19:線圈 20:薄膜沉積設備 21:腔體 22:容置空間 23:承載盤 25:晶圓 30:噴灑裝置 31:第一輸送管線 311:第一管部 313:第二管部 315:延伸管線 3151:出氣孔 317:擴散板 3171:穿孔 319:蓋板 33:第二輸送管線 35:擴散單元 351:第一擴散板 352:第一進氣管 353:第二擴散板 3535:冷卻管線 354:第二進氣管 355:第三擴散板 356:擴散空間 39:線圈 40:薄膜沉積設備10: Spraying device 11: The first delivery line 111: Expansion Department 113: Diffuser plate 1131: Perforation 13: Second delivery line 15: Diffusion unit 151: The first diffuser 152: First intake pipe 153: Second diffuser plate 1531: Ring Flange 1533: convex part 154: Second intake pipe 155: The third diffuser 156: Diffusion Space 157: Fourth diffuser 17: Annular diffuser unit 171: The first annular conveying line 172: The third intake pipe 173:Second annular delivery line 174: Fourth intake pipe 19: Coil 20: Thin film deposition equipment 21: Cavity 22: Accommodating space 23: Carrier plate 25: Wafer 30: Sprinkler 31: The first delivery line 311: The first pipe department 313: Second Pipe Department 315: Extension Line 3151: Air vent 317: Diffuser plate 3171: Perforation 319: Cover 33: Second delivery line 35: Diffusion unit 351: First diffuser 352: First intake pipe 353: Second diffuser 3535: Cooling Line 354: Second intake pipe 355: Third diffuser 356: Diffusion Space 39: Coil 40: Thin film deposition equipment
[圖1]為本發明噴灑裝置一實施例的剖面示意圖。1 is a schematic cross-sectional view of an embodiment of a spraying device of the present invention.
[圖2]為本發明噴灑裝置的擴散單元一實施例的立體剖面示意圖。FIG. 2 is a schematic perspective cross-sectional view of an embodiment of the diffusing unit of the spraying device of the present invention.
[圖3]為本發明擴散單元的一擴散板一實施例的頂部立體剖面示意圖。FIG. 3 is a schematic top perspective cross-sectional view of an embodiment of a diffuser plate of the diffuser unit of the present invention.
[圖4]為本發明擴散單元的一擴散板一實施例的底部立體剖面示意圖。FIG. 4 is a bottom three-dimensional cross-sectional schematic diagram of an embodiment of a diffuser plate of the diffuser unit of the present invention.
[圖5]為本發明噴灑裝置的擴散單元又一實施例的立體剖面示意圖。FIG. 5 is a schematic perspective cross-sectional view of another embodiment of the diffusing unit of the spraying device of the present invention.
[圖6]為本發明應用該噴灑裝置的薄膜沉積設備一實施例的剖面示意圖。6 is a schematic cross-sectional view of an embodiment of a thin film deposition apparatus using the spraying device of the present invention.
[圖7]為本發明噴灑裝置又一實施例的剖面示意圖。[ Fig. 7 ] is a schematic cross-sectional view of another embodiment of the spraying device of the present invention.
[圖8]為本發明應用該噴灑裝置的薄膜沉積設備又一實施例的立體剖面示意圖。[ Fig. 8 ] is a schematic three-dimensional cross-sectional view of another embodiment of a thin film deposition apparatus using the spraying device of the present invention.
[圖9]為本發明擴散單元的一擴散板又一實施例的立體剖面示意圖。FIG. 9 is a schematic three-dimensional cross-sectional view of another embodiment of a diffusing plate of the diffusing unit of the present invention.
[圖10]為本發明噴灑裝置又一實施例的剖面示意圖。10 is a schematic cross-sectional view of another embodiment of the spraying device of the present invention.
[圖11]為本發明噴灑裝置又一實施例的剖面示意圖。11 is a schematic cross-sectional view of another embodiment of the spraying device of the present invention.
10:噴灑裝置 10: Spraying device
11:第一輸送管線 11: The first delivery line
111:擴張部 111: Expansion Department
113:擴散板 113: Diffuser plate
1131:穿孔 1131: Perforation
13:第二輸送管線 13: Second delivery line
15:擴散單元 15: Diffusion unit
151:第一擴散板 151: The first diffuser
152:第一進氣管 152: First intake pipe
153:第二擴散板 153: Second diffuser plate
154:第二進氣管 154: Second intake pipe
155:第三擴散板 155: The third diffuser
156:擴散空間 156: Diffusion Space
17:環形擴散單元 17: Annular diffuser unit
171:第一環形輸送管線 171: The first annular conveying line
172:第三進氣管 172: The third intake pipe
173:第二環形輸送管線 173:Second annular delivery line
174:第四進氣管 174: Fourth intake pipe
19:線圈 19: Coil
Claims (10)
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TW202318530A TW202318530A (en) | 2023-05-01 |
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8142521B2 (en) * | 2010-03-29 | 2012-03-27 | Stion Corporation | Large scale MOCVD system for thin film photovoltaic devices |
US20160045841A1 (en) * | 2013-03-15 | 2016-02-18 | Transtar Group, Ltd. | New and improved system for processing various chemicals and materials |
US20210066070A1 (en) * | 2019-08-27 | 2021-03-04 | Albert-Ludwigs-Universität Freiburg | Method and apparatus for manufacturing a semiconductor layer and substrate provided therewith |
-
2021
- 2021-10-27 TW TW110139968A patent/TWI775661B/en active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8142521B2 (en) * | 2010-03-29 | 2012-03-27 | Stion Corporation | Large scale MOCVD system for thin film photovoltaic devices |
US20160045841A1 (en) * | 2013-03-15 | 2016-02-18 | Transtar Group, Ltd. | New and improved system for processing various chemicals and materials |
US20210066070A1 (en) * | 2019-08-27 | 2021-03-04 | Albert-Ludwigs-Universität Freiburg | Method and apparatus for manufacturing a semiconductor layer and substrate provided therewith |
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