TW202318108A - Exposure device and device manufacturing method - Google Patents
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- G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
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Abstract
Description
本發明係關於曝光裝置及元件製造方法。The present invention relates to an exposure device and a device manufacturing method.
以往,於利用液晶或有機EL製造顯示面板、半導體元件(積體電路等)等電子元件(微型元件)之微影步驟中,使用步進重複方式之投影曝光裝置(所謂步進機)、或步進掃描方式之投影曝光裝置(所謂掃描步進機(亦稱為掃描儀))等。此種曝光裝置對在玻璃基板、半導體晶圓、印刷配線基板、樹脂膜等被曝光基板(以下亦簡稱為基板)之表面塗布之感光層投影曝光電子元件用之光罩圖案。In the past, in the lithography process of manufacturing electronic components (microcomponents) such as display panels and semiconductor components (integrated circuits, etc.) using liquid crystal or organic EL, a step-and-repeat projection exposure device (so-called stepper), or Step-and-scan projection exposure devices (so-called scanning steppers (also known as scanners)), etc. This type of exposure device projects and exposes a photomask pattern for electronic components on a photosensitive layer coated on the surface of a substrate to be exposed such as a glass substrate, a semiconductor wafer, a printed wiring substrate, or a resin film (hereinafter referred to simply as a substrate).
將該光罩圖案固定形成之光罩基板之製作需要耗費時間與經費,因此代替光罩基板,而已知有一種曝光裝置,該曝光裝置使用將複數個微少位移之微鏡規則地排列而成之數位鏡元件(DMD)等空間光調變元件(可變光罩圖案生成器)(例如參照專利文獻1)。於專利文獻1所揭示之曝光裝置中,例如將利用多模光纖束將波長375 nm之來自雷射二極體(LD)之光與波長405 nm之來自LD之光混合而成之照明光照射至數位鏡元件(DMD),經由成像光學系、微透鏡陣列將來自傾斜控制之複數個微鏡各者之反射光投影至基板進行曝光。It takes time and money to manufacture a photomask substrate that is formed by fixing the photomask pattern. Therefore, instead of a photomask substrate, there is known an exposure device that uses a regular arrangement of a plurality of micromirrors that are slightly displaced. Spatial light modulation devices (variable mask pattern generators) such as digital mirror devices (DMDs) (for example, refer to Patent Document 1). In the exposure apparatus disclosed in
期待提高曝光裝置之產量。 [先前技術文獻] [專利文獻] It is expected to increase the output of the exposure device. [Prior Art Literature] [Patent Document]
[專利文獻1]日本特開2019-23748號公報[Patent Document 1] Japanese Patent Laid-Open No. 2019-23748
根據揭示之態樣,曝光裝置,係使藉由與描繪資料相應之空間光調變器所生成之圖案光對物體進行曝光者,具備:照明光學系,對上述空間光調變器照射照明光;投影光學系,將上述圖案光投影至上述物體;第一移動體,配置於上述投影光學系之下方,保持上述物體;第一驅動部,使上述第一移動體向於與上述投影光學系之光軸正交之既定平面內互相正交之第一方向與第二方向移動;第二移動體,保持上述空間光調變器;第二驅動部,使上述第二移動體移動;計測部,對包含上述物體之位置資訊與上述第一移動體之位置資訊之至少一者的計測結果進行計測;及控制部,根據上述計測部中所取得之上述計測結果,控制上述第二移動體之驅動與上述投影光學系之調整之至少一者,而控制上述圖案光之曝光位置。According to the disclosed aspect, the exposure device is for exposing an object to the patterned light generated by the spatial light modulator corresponding to the drawing data, comprising: an illumination optical system for irradiating the illuminating light to the spatial light modulator The projection optical system projects the pattern light onto the object; the first moving body is disposed below the projection optical system and holds the object; the first drive unit makes the first moving body align with the projection optical system The first direction and the second direction that are orthogonal to each other in the predetermined plane with the optical axis orthogonal to each other move; the second moving body holds the above-mentioned spatial light modulator; the second driving part moves the above-mentioned second moving body; the measuring part , measuring a measurement result including at least one of the position information of the object and the position information of the first mobile body; and the control unit, based on the measurement result obtained by the measurement unit, controls the At least one of driving and adjustment of the above-mentioned projection optical system is used to control the exposure position of the above-mentioned pattern light.
再者,可適當改良下文所述之實施形態之構成,又,可將至少一部分代替為其他構成物。進而,其配置並無特別限定之構成要件不限於實施形態所揭示之配置,可配置於能夠達成其功能之位置。In addition, the structure of the embodiment described below can be improved suitably, and can replace at least a part with another structure. Furthermore, the components whose arrangement is not particularly limited are not limited to the arrangement disclosed in the embodiment, and may be arranged at a position where the function can be achieved.
參照圖式對一實施形態之圖案曝光裝置(以下簡記為曝光裝置)進行說明。A pattern exposure device (hereinafter simply referred to as an exposure device) according to an embodiment will be described with reference to the drawings.
〔曝光裝置之整體構成〕 圖1係表示一實施形態之曝光裝置EX之外觀構成之概要的立體圖。曝光裝置EX係將藉由空間光調變元件(SLM:Spatial Light Modulator)將空間內之強度分布動態調變之曝光之光於被曝光基板成像投影之裝置。作為空間光調變器之例,可列舉:液晶元件、數位微鏡元件(DMD:Digital Micromirror Device)、磁光學空間光調變器(MOSLM:Magneto Optic Spatial Light Modulator)等。本實施形態之曝光裝置EX具備DMD10作為空間光調變器,亦可具備其他空間光調變器。 [Overall configuration of exposure device] FIG. 1 is a perspective view showing an outline of an external configuration of an exposure apparatus EX according to an embodiment. The exposure device EX is a device that uses a spatial light modulator (SLM: Spatial Light Modulator) to dynamically modulate the intensity distribution in the space and project the exposure light onto the exposed substrate. Examples of the spatial light modulator include a liquid crystal element, a digital micromirror device (DMD: Digital Micromirror Device), a magneto-optical spatial light modulator (MOSLM: Magneto Optic Spatial Light Modulator), and the like. The exposure apparatus EX of this embodiment includes DMD10 as a spatial light modulator, but may also include other spatial light modulators.
於特定之實施形態中,曝光裝置EX係以顯示裝置(平板顯示器)等所使用之矩形(方型)之玻璃基板作為曝光對象物之步進掃描方式之投影曝光裝置(掃描儀)。該玻璃基板設為至少一邊之長度、或對角長度為500 mm以上、厚度為1 mm以下之平板顯示器用之基板P。曝光裝置EX對以一定厚度於基板P之表面所形成之感光層(光阻)將由DMD製作之圖案之投影圖像進行曝光。曝光後自曝光裝置EX搬出之基板P於顯影步驟後送至既定之製程步驟(成膜步驟、蝕刻步驟、鍍敷步驟等)。In a specific embodiment, the exposure apparatus EX is a projection exposure apparatus (scanner) of a step-and-scan method in which a rectangular (square) glass substrate used in a display device (flat panel display) or the like is used as an exposure object. The glass substrate is used as a substrate P for flat panel displays with a length of at least one side or a diagonal length of 500 mm or more and a thickness of 1 mm or less. The exposure apparatus EX exposes the projection image of the pattern produced by DMD to the photosensitive layer (photoresist) formed on the surface of the board|substrate P with a certain thickness. After the exposure, the substrate P carried out from the exposure apparatus EX is sent to a predetermined process step (film formation step, etching step, plating step, etc.) after the development step.
曝光裝置EX具備載台裝置,該載台裝置係由載置於主動防振單元1a、1b、1c、1d(1d未圖示)上之底座2、載置於底座2上之定盤3、能夠於定盤3上二維移動之XY載台4A、使XY載台4A移動之第一驅動部、於XY載台4A上將基板P吸附保持於平面上之基板保持具4B(第一移動體)、及計測基板保持具4B(基板P)之二維之移動位置的雷射測長干涉計(以下亦簡稱為干涉計)IFX、IFY1~IFY4所構成。此種載台裝置例如於美國專利公開第2010/0018950號說明書、美國專利公開第2012/0057140號說明書中有所揭示。The exposure apparatus EX is equipped with a stage device, and the stage device is composed of a
於圖1中,正交座標系XYZ之XY面設定為與載台裝置之定盤3之平坦之表面平行,XY載台4A設定為能夠於XY面內平移。又,於本實施形態中,與座標系XYZ之X軸平行之方向設定為掃描曝光時之基板P(XY載台4A)之掃描移動方向。基板P之X軸方向之移動位置係利用干涉計IFX依次計測,Y軸方向之移動位置係利用4個干涉計IFY1~IFY4內之至少一個(較佳為2個)以上依次計測。基板保持具4B係以相對於XY載台4A而能夠沿著與XY面垂直之Z軸之方向微少移動且相對於XY面而能夠沿著任意方向微少傾斜之方式構成,主動進行基板P之表面與所投影之圖案之成像面之聚焦調整及調平(平行度)調整。進而,為了主動調整XY面內之基板P之斜率,基板保持具4B以能夠繞著與Z軸平行之軸線微少旋轉(θz旋轉)之方式構成。In FIG. 1 , the XY plane of the orthogonal coordinate system XYZ is set to be parallel to the flat surface of the fixed plate 3 of the stage device, and the
曝光裝置EX進而具備保持複數個曝光(描繪)模組組MU(A)、MU(B)、MU(C)之光學定盤5、及自底座2支承光學定盤5之主柱6a、6b、6c、6d(6d未圖示)。複數個曝光模組群組MU(A)、MU(B)、MU(C)分別安裝於光學定盤5之+Z方向側。複數個曝光模組群組MU(A)、MU(B)、MU(C)分別具有安裝於光學定盤5之+Z方向側併入射來自光纖單元FBU之照明光之照明單元ILU、及安裝於光學定盤5之-Z方向側且具有與Z軸平行之光軸之投影單元PLU。進而,曝光模組群組MU(A)、MU(B)、MU(C)分別具備作為使來自照明單元ILU之照明光朝向-Z方向反射併入射至投影單元PLU之光調變部之DMD10。下文對照明單元ILU、DMD10、投影單元PLU所構成之曝光模組之詳細構成進行說明。The exposure device EX is further equipped with an
於曝光裝置EX之光學定盤5之-Z方向側安裝有對於基板P上之既定之複數個位置形成之對準標記進行檢測之複數個對準系(顯微鏡)ALG。又,於基板保持具4B上之-X方向之端部設置有校準用之校正用基準部CU。校準包含各對準系ALG之檢測視野之XY面內的相對之位置關係之確認(校正)、自曝光模組群組MU(A)、MU(B)、MU(C)各自之投影單元PLU投射之圖案圖像之各投影位置與各對準系ALG之檢測視野之位置之基線誤差之確認(校正)、及自投影單元PLU投射之圖案圖像之位置或像質之確認的至少一者。再者,於圖1中有一部分未圖示,曝光模組群組MU(A)、MU(B)、MU(C)分別於本實施形態中作為一例而沿著Y方向以一定間隔排列9個模組,但其模組數可少於9個,亦可多於9個。又,於圖1中,沿著X軸方向配置有3行曝光模組,沿著X軸方向配置之曝光模組之行數可為2行以下,亦可為4行以上。A plurality of alignment systems (microscopes) ALG for detecting alignment marks formed at predetermined plural positions on the substrate P are attached to the −Z direction side of the
圖2係表示藉由曝光模組群組MU(A)、MU(B)、MU(C)各自之投影單元PLU投射至基板P上之DMD10之投影區域IAn之配置例的圖,正交座標系XYZ設定為與圖1相同。於本實施形態中,沿著X方向(第一方向)分開配置之第1行曝光模組群組MU(A)、第2行曝光模組群組MU(B)、第3行曝光模組群組MU(C)分別由沿著Y方向(第二方向)排列之9個模組所構成。曝光模組群組MU(A)係由沿著+Y方向配置之9個模組MU1~MU9所構成,曝光模組群組MU(B)係由沿著-Y方向配置之9個模組MU10~MU18所構成,曝光模組群組MU(C)係由沿著+Y方向配置之9個模組MU19~MU27所構成。模組MU1~MU27全部為相同之構成,於將曝光模組群組MU(A)與曝光模組群組MU(B)設為X方向相向之關係時,曝光模組群組MU(B)與曝光模組群組MU(C)於X方向成為背對背之關係。2 is a diagram showing an example of the configuration of the projection area IAn of the DMD10 projected onto the substrate P by the respective projection units PLU of the exposure module groups MU (A), MU (B), and MU (C), with orthogonal coordinates The system XYZ is set to be the same as in FIG. 1 . In this embodiment, the exposure module group MU (A) of the first row, the exposure module group MU (B) of the second row, and the exposure module of the third row are arranged separately along the X direction (first direction). The group MU(C) is composed of 9 modules arranged along the Y direction (second direction). The exposure module group MU (A) is composed of 9 modules MU1~MU9 arranged along the +Y direction, and the exposure module group MU (B) is composed of 9 modules arranged along the -Y direction It is composed of MU10-MU18, and the exposure module group MU(C) is composed of nine modules MU19-MU27 arranged along the +Y direction. The modules MU1-MU27 all have the same structure, and when the exposure module group MU (A) and the exposure module group MU (B) are set to face each other in the X direction, the exposure module group MU (B) It is in a back-to-back relationship with the exposure module group MU(C) in the X direction.
於圖2中,關於模組MU1~MU27各自之投影區域IA1、IA2、IA3、…、IA27(亦存在將n設為1~27而表示為IAn之情況)之形狀,作為一例,成為大致具有1:2之縱橫比並沿著Y方向延伸之長方形。於本實施形態中,伴隨基板P之+X方向之掃描移動,由第1行投影區域IA1~IA9各自之-Y方向之端部與第2行投影區域IA10~IA18各自之+Y方向之端部進行聯合曝光。並且,第1行與第2行投影區域IA1~IA18各自中未曝光之基板P上之區域係藉由第3行投影區域IA19~IA27各區域進行聯合曝光。第1行投影區域IA1~IA9各自之中心點位於與Y軸平行之線k1上,第2行投影區域IA10~IA18各自之中心點位於與Y軸平行之線k2上,第3行投影區域IA19~IA27各自之中心點位於與Y軸平行之線k3上。線k1與線k2之X方向之間隔設定為距離XL1,線k2與線k3之X方向之間隔設定為距離XL2。In FIG. 2 , the shapes of the projected areas IA1, IA2, IA3, . A rectangle with an aspect ratio of 1:2 and extending along the Y direction. In this embodiment, along with the scanning movement of the substrate P in the +X direction, the ends of the first row of projection areas IA1 to IA9 in the -Y direction and the ends of the second row of projection areas IA10 to IA18 in the +Y direction joint exposure. And, the unexposed regions on the substrate P in each of the projection areas IA1 to IA18 of the first and second rows are collectively exposed by the respective regions of the projection areas IA19 to IA27 of the third row. The center points of the projection areas IA1 to IA9 in the first row are located on the line k1 parallel to the Y axis, the center points of the projection areas IA10 to IA18 in the second row are located on the line k2 parallel to the Y axis, and the projection area IA19 in the third row The center points of ~IA27 are located on the line k3 parallel to the Y axis. The distance between the line k1 and the line k2 in the X direction is set as the distance XL1, and the distance between the line k2 and the line k3 in the X direction is set as the distance XL2.
此處,於將投影區域IA9之-Y方向之端部與投影區域IA10之+Y方向之端部之中繼部設為OLa,將投影區域IA10之-Y方向之端部與投影區域IA27之+Y方向之端部之中繼部設為OLb,並且將投影區域IA8之+Y方向之端部與投影區域IA27之-Y方向之端部之中繼部設為OLc時,藉由圖3對其聯合曝光之狀態進行說明。於圖3中,正交座標系XYZ設定為與圖1、圖2相同,投影區域IA8、IA9、IA10、IA27(及其他全部投影區域IAn)內之座標系X'Y'係以相對於正交座標系XYZ之X軸、Y軸(線k1~k3)傾斜角度θk之方式設定。即,以DMD10之複數個微鏡之二維排列成為座標系X'Y'之方式,DMD10之整體於XY面內傾斜角度θk。Here, the intermediate portion between the end of the projection area IA9 in the -Y direction and the end of the projection area IA10 in the +Y direction is OLa, and the end of the projection area IA10 in the -Y direction and the end of the projection area IA27 are When the relay portion at the end of the +Y direction is OLb, and the relay portion between the end of the projection area IA8 in the +Y direction and the end of the projection area IA27 in the −Y direction is OLc, as shown in FIG. 3 Explain the status of its joint exposure. In Figure 3, the orthogonal coordinate system XYZ is set to be the same as that in Figure 1 and Figure 2, and the coordinate system X'Y' in the projection areas IA8, IA9, IA10, IA27 (and all other projection areas IAn) is set relative to the The X-axis and Y-axis (lines k1~k3) of the cross coordinate system XYZ are set in the manner of inclination angle θk. That is, in such a manner that the two-dimensional arrangement of a plurality of micromirrors of the
圖3中包含各投影區域IA8、IA9、IA10、IA27(及其他全部投影區域IAn亦相同)之圓形之區域表示投影單元PLU之圓形像場PLf'。於中繼部OLa中,以沿著投影區域IA9之-Y'方向之端部之斜向(角度θk)排列之微鏡之投影圖像與沿著投影區域IA10之+Y'方向之端部之斜向(角度θk)排列之微鏡之投影圖像重疊之方式設定。又,於中繼部OLb中,以沿著投影區域IA10之-Y'方向之端部之斜向(角度θk)排列之微鏡之投影圖像與沿著投影區域IA27之+Y'方向之端部之斜向(角度θk)排列之微鏡之投影圖像重疊之方式設定。同樣地,於中繼部OLc中,以沿著投影區域IA8之+Y'方向之端部之斜向(角度θk)排列之微鏡之投影圖像與沿著投影區域IA27之-Y'方向之端部之斜向(角度θk)排列之微鏡之投影圖像重疊之方式設定。In FIG. 3 , the circular area including the projection areas IA8 , IA9 , IA10 , and IA27 (and all other projection areas IAn are the same) represents the circular image field PLf′ of the projection unit PLU. In the relay part OLa, the projection image of the micromirrors arranged in the oblique direction (angle θk) along the end of the -Y' direction of the projection area IA9 and the end of the +Y' direction of the projection area IA10 The overlapping mode of the projected images of the micromirrors arranged obliquely (angle θk) is set. Also, in the relay portion OLb, the projection image of the micromirrors arranged in the oblique direction (angle θk) along the end of the -Y' direction of the projection area IA10 and the projection image along the +Y' direction of the projection area IA27 The method of overlapping the projected images of the micromirrors arranged obliquely (angle θk) at the end is set. Similarly, in the relay part OLc, the projection image of the micromirrors arranged in the oblique direction (angle θk) along the end of the +Y' direction of the projection area IA8 is different from that along the -Y' direction of the projection area IA27. The overlapping mode of the projected images of the micromirrors arranged obliquely (angle θk) at the end of the set is set.
〔照明單元之構成〕 圖4係於XZ面內觀察圖1、圖2所示之曝光模組群組MU(B)中之模組MU18與曝光模組群組MU(C)中之模組MU19之具體構成的光學配置圖。圖4之正交座標系XYZ設定為與圖1~圖3之正交座標系XYZ相同。又,根據圖2所示之各模組之XY面內之配置可知,模組MU18相對於模組MU19而於+Y方向錯開一定間隔,並且以互相背對背之關係設置。模組MU18內之各光學構件與模組MU19內之各光學構件分別由相同材料以相同方式構成,因此,此處主要對模組MU18之光學構成進行詳細說明。再者,圖1所示之光纖單元FBU對應於圖2所示之27個模組MU1~MU27之各者,由27根光纖束FB1~FB27所構成。 〔The composition of the lighting unit〕 Figure 4 is an optical view of the specific composition of the module MU18 in the exposure module group MU (B) and the module MU19 in the exposure module group MU (C) shown in Figure 1 and Figure 2 in the XZ plane configuration diagram. The orthogonal coordinate system XYZ in FIG. 4 is set to be the same as the orthogonal coordinate system XYZ in FIGS. 1 to 3 . Also, it can be seen from the arrangement of the modules in the XY plane shown in FIG. 2 that the module MU18 is staggered by a certain interval in the +Y direction relative to the module MU19, and is arranged in a back-to-back relationship. The optical components in the module MU18 and the optical components in the module MU19 are respectively made of the same material and in the same manner. Therefore, the optical configuration of the module MU18 will be described in detail here. Furthermore, the fiber unit FBU shown in FIG. 1 corresponds to each of the 27 modules MU1-MU27 shown in FIG. 2, and is composed of 27 fiber bundles FB1-FB27.
模組MU18之照明單元ILU係由將自光纖束FB18之射出端向-Z方向前進之照明光ILm反射之反射鏡100、將來自反射鏡100之照明光ILm向-Z方向反射之反射鏡102、作為準直透鏡發揮作用之輸入透鏡系104、照度調整濾光片106、包含微複眼(MFE)透鏡或場透鏡等之光學積分器108、聚光透鏡系110、及將來自聚光透鏡系110之照明光ILm朝向DMD10反射之傾斜反射鏡112所構成。反射鏡102、輸入透鏡系104、光學積分器108、聚光透鏡系110、及傾斜反射鏡112係沿著與Z軸平行之光軸AXc配置。The illumination unit ILU of the module MU18 is composed of a
光纖束FB18係將1根光纖線、或複數根光纖線束集所構成。自光纖束FB18(各光纖線)之射出端照射之照明光ILm被設定為如不會被後段之輸入透鏡系104排斥而入射之數值孔徑(亦稱為NA、張角)。輸入透鏡系104之前側焦點之位置於設計上被設定為與光纖束FB18之射出端之位置相同。進而,輸入透鏡系104之後側焦點之位置係以使來自於光纖束FB18之射出端形成之單一或複數個點光源之照明光ILm於光學積分器108之MFE透鏡108A之入射面側重疊之方式設定。因此,MFE透鏡108A之入射面係藉由來自光纖束FB18之射出端之照明光ILm進行柯勒照明。再者,於初始狀態下,光纖束FB18之射出端之XY面內的幾何學上之中心點位於光軸AXc上,來自光纖線之射出端之點光源的照明光ILm之主光線(中心線)設為與光軸AXc平行(或同軸)。The optical fiber bundle FB18 is composed of one optical fiber or a plurality of optical fiber bundles. The illumination light ILm irradiated from the output end of the optical fiber bundle FB18 (each optical fiber line) is set to a numerical aperture (also referred to as NA, aperture angle) that enters without being repelled by the
來自輸入透鏡系104之照明光ILm利用照度調整濾光片106以0%~90%之範圍之任意值衰減照度後,通過光學積分器108(MFE透鏡108A、場透鏡等)入射至聚光透鏡系110。MFE透鏡108A係將數十μm見方之矩形之微透鏡二維排列複數個而成者,以其整體之形狀於XY面內與DMD10之反射鏡整體之形狀(縱橫比約為1:2)大致相似之方式設定。又,聚光透鏡系110之前側焦點之位置係以與MFE透鏡108A之射出面之位置大致相同之方式設定。因此,來自於MFE透鏡108A之複數個微透鏡之各射出側形成之點光源的照明光分別藉由聚光透鏡系110而轉換為大致平行之光束,被傾斜反射鏡112反射後,於DMD10上重疊而成為均勻之照度分布。於MFE透鏡108A之射出面生成複數個點光源(聚光點)二維緊密排列而成之面光源,因此作為面光源化構件發揮功能。The illumination light ILm from the
於圖4所示之模組MU18內,通過聚光透鏡系110之與Z軸平行之光軸AXc被傾斜反射鏡112彎折而到達DMD10,將傾斜反射鏡112與DMD10之間之光軸設為光軸AXb。於本實施形態中,包含DMD10之複數個微鏡各自之中心點之中立面設定為與XY面平行。因此,該中立面之法線(與Z軸平行)與光軸AXb所形成之角度成為照明光ILm相對於DMD10之入射角θα。DMD10安裝於固設於照明單元ILU之支承柱之裝配部10M之下側。為了對DMD10之位置或姿勢進行微調,而於裝配部10M設置例如國際公開專利2006/120927號所揭示之將並聯機構與能夠伸縮之壓電元件組合而成之微動載台(第二移動體)10S。微動載台10S能夠藉由微動載台驅動部10D(第二驅動部)而沿著X方向、Y方向移動,能夠進行θz旋轉(Z軸)。因此,藉由微動載台10S沿著XY方向移動、或θz旋轉,而能夠使DMD10沿著XY方向移動或θz旋轉。又,可藉由使用位移感測器(未圖示),對微動載台10S之移動量或旋轉量進行反饋控制。In the module MU18 shown in Figure 4, the optical axis AXc parallel to the Z axis passing through the
[DMD之構成] 圖5(A)係概略性地表示DMD10之圖,圖5(B)係表示電源為OFF之情形時之DMD10的圖,圖5(C)係用以對開啟狀態之反射鏡進行說明之圖,圖5(D)係用以對關閉狀態之反射鏡進行說明之圖。再者,於圖5(A)~圖5(D)中,以影線表示處於開啟狀態之反射鏡。 [Constitution of DMD] Fig. 5(A) is a diagram schematically showing the DMD10, Fig. 5(B) is a diagram showing the DMD10 when the power is OFF, and Fig. 5(C) is a diagram for explaining the reflector in the open state , Figure 5 (D) is a diagram used to illustrate the mirror in the closed state. Furthermore, in FIGS. 5(A) to 5(D), the reflectors in the open state are indicated by hatching.
DMD10具有複數個能夠控制反射角變更之微鏡10a。於本實施形態中,DMD10設為藉由微鏡10a之滾動方向傾斜與俯仰方向傾斜切換開啟狀態與關閉狀態之滾動及俯仰驅動方式。The
如圖5(B)所示,於電源關閉之狀態時,各微鏡10a之反射面設定為與X'Y'面平行。將各微鏡10a之X'方向之排列間距設為Pdx(μm),將Y'方向之排列間距設為Pdy(μm),但於實用上設定為Pdx=Pdy。As shown in FIG. 5(B), when the power is turned off, the reflective surface of each
各微鏡10a藉由繞著Y'軸傾斜而成為開啟狀態。於圖5(C)中,示出僅將中央之微鏡10a設為開啟狀態且將其他微鏡10a設為中性狀態(不為開啟亦不為關閉之狀態)之情形。又,各微鏡10a藉由繞著X'軸傾斜而成為關閉狀態。於圖5(D)中,示出僅將中央之微鏡10a設為關閉狀態且將其他微鏡10a設為中性狀態之情形。再者,為了簡化而未圖示,但開啟狀態之微鏡10a係以自X'Y'平面傾斜既定之角度之方式被驅動,以使照射至開啟狀態之微鏡10a之照明光被反射向XZ平面之X方向。又,關閉狀態之微鏡10a係以自X'Y'平面傾斜既定之角度之方式被驅動,以使照射至開啟狀態之微鏡10a之照明光被反射向YZ面內之Y方向。DMD10藉由切換各微鏡10a之開啟狀態及關閉狀態,而生成曝光圖案。Each
被關閉狀態之反射鏡所反射之照明光被未圖示之光吸收體所吸收。The illuminating light reflected by the reflector in the closed state is absorbed by a light absorber not shown.
再者,由於以DMD10作為空間光調變器之一例進行說明,故而以反射雷射光之反射型之形式進行說明,但空間光調變器可為使雷射光透過之透過型,亦可為使雷射光繞射之繞射型。空間光調變器能夠以空間方式、且以時間方式調變雷射光。Furthermore, since the DMD10 is used as an example of the spatial light modulator for description, it will be described in the form of a reflective type that reflects laser light, but the spatial light modulator may be of a transmission type that allows laser light to Diffraction type of laser light diffraction. A spatial light modulator can modulate laser light both spatially and temporally.
返回圖4,對DMD10之微鏡10a中為開啟狀態之微鏡10a照射之照明光ILm以朝向投影單元PLU之方式被反射向XZ面內之X方向。另一方面,對DMD10之微鏡10a中為關閉狀態之微鏡10a照射之照明光ILm以不朝向投影單元PLU之方式被反射向YZ面內之Y方向。Returning to FIG. 4 , the illumination light ILm irradiated to the micromirror 10 a in the ON state among the
於DMD10至投影單元PLU之間之光路中,以能夠拔插之方式設置有用以於非曝光期間中遮蔽來自DMD10之反射光之可動擋板114。可動擋板114如模組MU19側所圖示,於曝光期間中轉動至自光路退避之角度位置,於非曝光期間中如模組MU18側所圖示,轉動至傾斜插入光路中之角度位置。於可動擋板114之DMD10側形成反射面,因此,所反射之來自DMD10之光被照射至光吸收體117。光吸收體117將紫外波長區域(400 nm以下之波長)之光能吸收並將其轉換為熱能,而不使其再反射。因此,於光吸收體117亦設置放熱機構(散熱片或冷卻機構)。再者,圖4中雖然未圖示,但來自曝光期間中成為關閉狀態之DMD10之微鏡10a的反射光如上所述,被相對於DMD10與投影單元PLU之間之光路而沿著Y方向(圖4之與紙面正交之方向)設置之同樣之光吸收體(圖4中未圖示)所吸收。In the optical path between the DMD10 and the projection unit PLU, a
〔投影單元之構成〕
安裝於光學定盤5之下側之投影單元PLU係作為由沿著與Z軸平行之光軸AXa配置之第一透鏡組116與第二透鏡組118所構成之兩側遠心之成像投影透鏡系所構成。第一透鏡組116與第二透鏡組118係以分別相對於固設於光學定盤5之下側之支承柱而於沿著Z軸(光軸AXa)之方向藉由微動致動器進行平移之方式構成。第一透鏡組116與第二透鏡組118構成之成像投影透鏡系之投影倍率Mp係根據DMD10上之微鏡之排列間距Pd與投影至基板P上之投影區域IAn(n=1~27)內之圖案的最小線寬(最小像素尺寸)Pg之關係所決定。
〔The composition of the projection unit〕
The projection unit PLU installed on the lower side of the optical fixed
作為一例,於所需之最小線寬(最小像素尺寸)Pg為1 μm且微鏡之排列間距Pdx及Pdy分別為5.4 μm之情形時,亦考慮上文之圖3中所說明之投影區域IAn(DMD10)之XY面內之傾角θk,而將投影倍率Mp設定為約1/6。透鏡組116、118構成之成像投影透鏡系使DMD10之反射鏡整體之縮小圖像倒立/反轉而於基板P上之投影區域IA18(IAn)成像。As an example, when the required minimum line width (minimum pixel size) Pg is 1 μm and the arrangement pitches Pdx and Pdy of the micromirrors are 5.4 μm respectively, the projected area IAn illustrated in Figure 3 above is also considered (DMD10) The inclination angle θk in the XY plane, and the projection magnification Mp is set to about 1/6. The imaging projection lens formed by the
投影單元PLU之第一透鏡組116為了進行投影倍率Mp之微調(±數十ppm左右)而可藉由致動器沿著光軸AXa方向微動,第二透鏡組118為了進行聚焦之高速調整而可藉由致動器沿著光軸AXa方向微動。進而,為了以次微米以下之精度計測基板P之表面之Z軸方向之位置變化,而於光學定盤5之下側設置有複數個斜入射光式之聚焦感測器120。複數個聚焦感測器120對基板P之整體之Z軸方向之位置變化、對應於各投影區域IAn(n=1~27)之基板P上之部分區域的Z軸方向之位置變化、或基板P之部分傾斜變化等進行計測。The
又,於本實施形態中,於DMD10與第一透鏡組116之間設置有如圖6(A)所示之2個偏角稜鏡600a、600b或如圖6(B)所示之2塊平行平板601a、601b。以下,只要無特別限定,則將2個偏角稜鏡600a、600b與2塊平行平板601a、601b稱為光學元件OPE。又,於本實施形態中,亦將修正位置偏移稱為使其像位移。再者,於本實施形態中,光學元件OPE設置於DMD10與第一透鏡組116之間,但不限於此。光學元件OPE亦可設置於第一透鏡組116與第二透鏡組之間、或投影單元PLU與基板P之間。再者,由投影單元PLU與光學元件OPE構成投影光學系。Also, in this embodiment, between the DMD10 and the
如以上之照明單元ILU與投影單元PLU如上文之圖3中所說明般,於XY面內投影區域IAn需要傾斜角度θk,因此圖4中之DMD10與照明單元ILU(至少沿著光軸AXc之反射鏡102~反射鏡112之光路部分)以整體於XY面內傾斜角度θk之方式配置。As the above illumination unit ILU and projection unit PLU are as explained in FIG. 3 above, the projection area IAn in the XY plane needs an inclination angle θk, so the DMD10 and the illumination unit ILU in FIG. 4 (at least along the optical axis AXc) The
[校正用基準部CU之構成]
圖7係表示於附設於曝光裝置EX之基板保持具4B上之端部之校正用基準部CU設置之對準裝置60之概略構成的圖。對準裝置60具備基準標記60a、及二維攝影元件60e等。對準裝置60用於各種模組之位置之計測及校正,亦用於對準系ALG之校正。
[Configuration of reference unit CU for calibration]
FIG. 7 is a diagram showing a schematic configuration of an
各模組MU1~MU27之位置之計測係藉由利用投影單元PLU將校正用之DMD圖案投影至對準裝置60之基準標記60a上,並計測基準標記60a與DMD圖案之相對位置而進行。The measurement of the position of each module MU1-MU27 is performed by projecting the calibration DMD pattern onto the
又,對準系ALG之校正可藉由利用對準系ALG計測對準裝置60之基準標記60a而進行。即,可藉由利用對準系ALG計測對準裝置60之基準標記60a,而求出對準系ALG之位置。進而,可使用基準標記60a,求出對準系ALG與模組MU1~MU27之相對位置。Also, the calibration of the alignment system ALG can be performed by measuring the
又,對準系ALG可以對準裝置60之基準標記60a為基準來計測於基板保持具4B上載置之基板P上之對準標記之位置。Moreover, the alignment system ALG can measure the position of the alignment mark on the board|substrate P mounted on the board|
[曝光控制裝置之構成]
於具有上述構成之曝光裝置EX中所進行之包含掃描曝光處理在內之各種處理係由曝光控制裝置300進行控制。圖8係表示本實施形態之曝光裝置EX所具備之曝光控制裝置300之功能構成的功能方塊圖。
[Structure of Exposure Control Device]
Various processes including the scanning exposure process performed in the exposure apparatus EX having the above configuration are controlled by the
曝光控制裝置300具備描繪資料記憶部310、控制資料製作部301、修正資料製作部302、驅動控制部304、及曝光控制部306。The
於描繪資料記憶部310中記憶有藉由複數個模組MUn(n=1~27)所分別曝光之顯示面板用之圖案之描繪資料。描繪資料記憶部310將圖案曝光用之描繪資料MD1~MD27送出至圖2所示之27個模組MU1~MU27各自之DMD10。模組MUn(n=1~27)根據描繪資料MDn選擇性地驅動DMD10之微鏡10a,生成對應於描繪資料MDn之圖案,投影至基板P進行曝光。即,描繪資料係切換DMD10之各微鏡10a之開啟狀態與關閉狀態之資料。The drawing data of the patterns for the display panel exposed by a plurality of modules MUn (n=1 to 27) respectively are stored in the drawing
控制資料製作部301根據利用對準系ALG之基板P之對準計測結果製作第一控制資料,並輸出至驅動控制部304。第一控制資料係用於以根據對準計測結果修正基板P之位置偏移之方式,控制各模組MUn(n=1~27)所具備之DMD10之微動載台10S之驅動、投影單元PLU之光學系(第一透鏡組116及第二透鏡組118)之驅動、及光學元件OPE之驅動的資料。The control
更具體而言,於驅動DMD10之微動載台10S時,根據第一控制資料定義各模組MU1~MU27之微動載台10S之驅動量。由微動載台驅動部10D所驅動之微動載台10S沿著X方向、Y方向移動,或沿著θz方向旋轉。其結果,能夠使投影至基板P之投影圖像發生像位移。More specifically, when driving the fine movement stage 10S of the DMD10, the driving amount of the fine movement stage 10S of each module MU1-MU27 is defined according to the first control data. The fine movement stage 10S driven by the fine movement
又,於調整投影單元PLU之光學系時,根據第一控制資料定義各模組MU1~MU27之投影單元PLU之驅動量或投影單元PLU內之透鏡之調整量。於驅動投影單元PLU之情形時,投影單元PLU藉由投影單元PLU所具備之致動器等,使第一透鏡組116或第二透鏡組118之至少一個透鏡組於XY平面內移動。其結果,能夠使投影至基板P之投影圖像發生像位移。又,就像差之觀點而言,投影單元PLU更佳為使第一透鏡組116及第二透鏡組118之移動量相同,而使第一透鏡組116及第二透鏡組118移動。於調整投影單元PLU內之透鏡時,藉由第一透鏡組116及第二透鏡組118所具備之致動器等,使設置於第一透鏡組116或第二透鏡組118內之至少一個透鏡於XY平面內移動。其結果,能夠使投影至基板P之投影圖像發生像位移。Moreover, when adjusting the optical system of the projection unit PLU, the driving amount of the projection unit PLU of each module MU1-MU27 or the adjustment amount of the lens in the projection unit PLU is defined according to the first control data. In the case of driving the projection unit PLU, the projection unit PLU moves at least one lens group of the
又,於驅動設置於各模組MU1~MU27之DMD10與第一透鏡組116之間之2個偏角稜鏡600a、600b時,根據第一控制資料定義2個偏角稜鏡600a、600b之驅動量。藉由控制2個偏角稜鏡之間隔,能夠使投影至基板P之投影圖像發生像位移。又,2個偏角稜鏡600a、600b不僅可設置於DMD10與第一透鏡組116之間,而且亦可設置於第一透鏡組116與第二透鏡組118之間、第二透鏡組118與基板P之間。Also, when driving the two
進而,於驅動設置於各模組MU1~MU27之DMD10與第一透鏡組116之間之2塊平行平板601a、601b時,根據第一控制資料定義2塊平行平板601a、601b之驅動量。藉由控制使2塊平行平板601a、601b進行θz旋轉之旋轉量,能夠使投影至基板P之投影圖像發生像位移。2塊平行平板601a、601b不僅可設置於DMD10與第一透鏡組116之間,而且亦可設置於第一透鏡組116與第二透鏡組118之間、第二透鏡組118與基板P之間。Furthermore, when driving the two parallel
此處,對製作第一控制資料之理由進行說明。例如,於自設計位置偏移之位置,將基板P載置於基板保持具4B。於此情形時,若直接進行掃描曝光,則根據描繪資料MDn所生成之圖案自設計上之位置偏移而被曝光於基板P。作為於以上述方式使位置偏移並載置之基板P之既定位置(設計上之位置)曝光圖案之方法,例如考慮根據利用對準系ALG之基板P之對準計測結果,根據位置偏移之基板P改寫描繪資料MDn。然而,由於顯示面板用之描繪資料MDn之資料量較多,故而改寫耗費較長時間(例如40分鐘),有降低產量之虞。又,於位置偏移量小於投影至基板P之圖案之最小線寬(最小像素尺寸)之情形時,即使變更描繪資料亦無法修正該位置偏移。即,存在藉由變更描繪資料難以高精度地進行修正之情形。Here, the reason for creating the first control data will be described. For example, the substrate P is placed on the
因此,於本實施形態中,根據利用對準系ALG之基板P之對準計測結果,並非改寫描繪資料MDn,而是使圖案之投影位置偏移,並修正基板P相對於設計值之位置偏移。具體而言,藉由控制DMD10之微動載台10S、投影單元PLU之光學系、光學元件OPE之至少一者之驅動,使圖案之投影位置偏移。藉此,能夠修正基板P相對於設計值之位置偏移。Therefore, in this embodiment, based on the alignment measurement result of the substrate P using the alignment system ALG, instead of rewriting the drawing data MDn, the projected position of the pattern is shifted, and the position deviation of the substrate P relative to the design value is corrected. shift. Specifically, by controlling the drive of at least one of the micro-motion stage 10S of the
例如,於基板P繞著Z軸而自設計值偏移α度(旋轉α度)配置之情形時,藉由使DMD10之微動載台10S自初始位置起θz旋轉α度,對DMD10之X方向及Y方向之位置進行調整,而能夠將圖案投影至設計位置。For example, when the substrate P is arranged with a deviation of α degrees (rotation α degrees) from the design value around the Z axis, by rotating the fine movement stage 10S of the
再者,於本實施形態中,由於模組MUn(n=1~27)沿著X方向及Y方向排列,故而控制資料製作部301亦考慮模組MUn間之關係而製作第一控制資料。再者,第一控制資料之製作時間例如為數秒左右。Furthermore, in this embodiment, since the modules MUn (n=1-27) are arranged along the X direction and the Y direction, the control
於在曝光處理與曝光處理之間進行校準之情形時,修正資料製作部302根據校準結果製作修正資料,並輸出至驅動控制部304。修正資料係用於以根據校準結果修正曝光裝置EX之各構成(例如模組MUn、對準系ALG等)之位置偏移之方式,修正DMD10之微動載台10S之驅動量、投影單元PLU之光學系之驅動量、及光學元件OPE之驅動量的資料。例如,修正資料中,對於各模組MU1~MU27,定義DMD10之微動載台10S之驅動量之偏移值、投影單元PLU之光學系之驅動量之偏移值、及光學元件OPE之驅動量之偏移值。When calibration is performed between exposure processing and exposure processing, the correction
此處,對製作修正資料之理由進行說明。例如,若於曝光裝置EX中反覆進行曝光處理,則曝光裝置EX之各構成之位置偏移,而存在於曝光處理與曝光處理之間需要進行校準之情形。通常於需要校準之情形時,考慮重新設定構成、或以修正各構成之位置偏移之方式改寫描繪資料。Here, the reason for creating the correction data will be explained. For example, if the exposure process is repeated in the exposure apparatus EX, the positions of the components of the exposure apparatus EX will shift, and calibration may be required between exposure processes. Usually, when calibration is required, it is considered to reset the composition or rewrite the drawing data in a way of correcting the positional offset of each composition.
然而,若根據校準結果重新進行曝光裝置EX之各構成之設定或進行描繪資料之改寫,則會耗費時間,有降低產量之虞。又,於位置偏移量小於投影至基板P之圖案之最小線寬(最小像素尺寸)之情形時,即使變更描繪資料,亦無法修正該位置偏移。即,存在藉由描繪資料之變更難以高精度地進行修正之情形。However, resetting each configuration of the exposure apparatus EX or rewriting the drawing data based on the calibration results will take time and may reduce throughput. Also, when the amount of misalignment is smaller than the minimum line width (minimum pixel size) of the pattern projected onto the substrate P, the misalignment cannot be corrected even if the drawing data is changed. That is, it may be difficult to perform correction with high accuracy by changing the drawing data.
因此,於本實施形態中,於在曝光處理與曝光處理之間進行校準之情形時,並非根據校準之結果重新設定曝光裝置EX之各構成或進行描繪資料之改寫,而是以修正曝光裝置EX之各構成之位置偏移之方式修正DMD10之微動載台10S之驅動量、投影單元PLU之光學系之驅動量及光學元件OPE之驅動量。修正資料製作部302以上述方式,製作用以修正DMD10之微動載台10S之驅動量、投影單元PLU之光學系之驅動量及光學元件OPE之驅動量之修正資料。Therefore, in this embodiment, when calibration is performed between exposure processing and exposure processing, instead of resetting each configuration of the exposure device EX or rewriting the drawing data based on the calibration result, the exposure device EX is corrected. Correct the driving amount of the micro-motion stage 10S of the DMD10, the driving amount of the optical system of the projection unit PLU, and the driving amount of the optical element OPE by means of the positional deviation of each component. The correction
驅動控制部304生成藉由自修正資料製作部302輸入之修正資料對自控制資料製作部301輸入之第一控制資料進行修正而得之第二控制資料。The
又,驅動控制部304可不利用修正資料製作部302製作修正資料,而是將自控制資料製作部301輸入之第一控制資料與校準結果組合而生成第二控制資料。In addition, the
又,驅動控制部304製作驅動量控制資料CD1~CD27,並輸出至模組MU1~MU27,該驅動量控制資料CD1~CD27係根據干涉計IFY1~IFY4之計測結果,對第二控制資料所包含之DMD10之微動載台10S之驅動量、投影單元PLU之光學系之驅動量、及光學元件OPE之驅動量進行即時修正而得。曝光控制裝置300(驅動控制部304)亦可控制使XY載台4A移動之第一驅動部。又,曝光控制裝置300(驅動控制部304)亦可控制微動載台驅動部10D。又,曝光控制裝置300(驅動控制部304)亦可控制驅動設置於投影光學系內之第一透鏡組116、第二透鏡組118、光學元件OPE之驅動部。In addition, the driving
此處,對驅動控制部304即時修正第二控制資料之理由進行說明。於基板P之掃描曝光中,存在基板保持具4B未如設計般移動(例如本應沿著X方向直進,卻蜿蜒前進等)之情形。如上所述,於基板保持具4B未如設計般移動之情形(例如既定之X方向位置處之基板保持具4B的Y方向之位置與設計值不同之情形)時,若直接進行掃描曝光,則根據描繪資料MDn之圖案自設計上之位置偏移而被曝光於基板P。此時,以追隨基板保持具4B之位置偏移之方式改寫描繪資料於時間上較為困難。又,於位置偏移量小於投影至基板P之圖案之最小線寬(最小像素尺寸)之情形時,即使變更描繪資料,亦無法修正該位置偏移。即,存在藉由描繪資料之變更難以高精度地進行修正之情形。Here, the reason why the
因此,於本實施形態中,驅動控制部304根據干涉計IFY1~IFY4之計測結果,藉由對第二控制資料所包含之DMD10之微動載台10S之驅動量、投影單元PLU之光學系之驅動量、及光學元件OPE之驅動量進行即時修正後之驅動量控制資料(第三控制資料)CD1~CD27控制模組MU1~MU2。藉此,能夠修正基板P之位置偏移、曝光裝置EX之各構成之位置偏移、及掃描曝光中之基板保持具4B之位置偏移,而能夠如設計值般將圖案投影至基板P進行曝光。Therefore, in this embodiment, the
模組MU1~MU27於掃描曝光中,根據自驅動控制部304送出之驅動量控制資料CD1~CD27,對DMD10之微動載台10S之驅動、投影單元PLU之光學系之驅動、及光學元件OPE之驅動進行控制。During the scanning exposure, the modules MU1~MU27 control the data CD1~CD27 based on the driving amount sent from the driving
曝光控制部(定序器)306與基板P之掃描曝光(移動位置)同步,對描繪資料MD1~MD27自描繪資料記憶部310向模組MU1~MU27之送出與驅動量控制資料CD1~CD27自驅動控制部304之送出進行控制。The exposure control unit (sequencer) 306 synchronizes with the scanning exposure (moving position) of the substrate P, sends out the drawing data MD1-MD27 from the drawing
[曝光處理順序概要] 其次,參照圖9對本實施形態之曝光裝置EX中之曝光處理順序之概要進行說明。圖9係表示初次使用曝光裝置EX對基板P進行曝光處理之情形、或使用未長期使用之曝光裝置EX對基板P進行曝光處理之情形之順序之概要的流程圖。於以下例中,說明對基板P將顯示面板等之圖案掃描曝光之情形。 [Outline of Exposure Processing Sequence] Next, the outline of the exposure processing procedure in the exposure apparatus EX of this embodiment is demonstrated with reference to FIG. 9. FIG. FIG. 9 is a flow chart showing an outline of the procedure when exposing the substrate P using the exposure apparatus EX for the first time or exposing the substrate P using the exposure apparatus EX that has not been used for a long time. In the following example, the case where the pattern scanning exposure of a display panel etc. is made to the board|substrate P is demonstrated.
於圖9所示之順序中,首先進行曝光裝置EX之初始校準(步驟S11)。於初始校準中,根據對準系ALG等之計測結果,校正曝光裝置EX之各構成之設定。例如,修正模組MU1~MU27之位置、模組MU1~MU27各自之照明單元ILU、DMD10、及投影單元PLU之初始位置或初始姿勢、基板保持具4B之斜率等。In the sequence shown in FIG. 9, the initial calibration of the exposure apparatus EX is performed first (step S11). In the initial calibration, the settings of the components of the exposure apparatus EX are corrected based on the measurement results of the alignment system ALG and the like. For example, the positions of the modules MU1-MU27, the initial positions or initial postures of the illumination units ILU, DMD10, and projection unit PLU of the respective modules MU1-MU27, the slope of the
其次,將利用複數個模組MUn(n=1~27)分別曝光之顯示面板用之圖案之描繪資料載入至描繪資料記憶部310(步驟S13)。Next, the drawing data of the pattern for the display panel exposed respectively by a plurality of modules MUn (n=1-27) is loaded into the drawing data memory part 310 (step S13).
其次,將基板P搬入曝光裝置EX本體部,並載置於基板保持具4B上(步驟S15)。Next, the substrate P is carried into the main body of the exposure apparatus EX, and placed on the
其次,利用複數個對準系ALG計測於基板P上之既定之複數個位置形成之對準標記(步驟S17)。Next, the alignment marks formed at predetermined plural positions on the board|substrate P are measured using several alignment systems ALG (step S17).
其次,根據對準系ALG之計測結果,由控制資料製作部301以修正基板P之位置偏移之方式製作規定DMD10之微動載台10S之驅動量、投影單元PLU之光學系之驅動量、及光學元件OPE之驅動量的第一控制資料(步驟S19)。Next, based on the measurement results of the alignment system ALG, the control
其次,模組MUn(n=1~27)根據描繪資料MDn與驅動量控制資料CDn,將顯示面板等之圖案於基板P上掃描曝光(步驟S21)。此時之驅動量控制資料CDn係根據干涉計IFY1~IFY4之計測結果(即基板保持具4B之位置)即時修正第一控制資料所取得之資料(第四控制資料)。Next, the module MUn (n=1-27) scans and exposes the pattern of the display panel on the substrate P according to the drawing data MDn and the driving amount control data CDn (step S21 ). The driving amount control data CDn at this time is data (fourth control data) obtained by correcting the first control data in real time based on the measurement results of the interferometers IFY1-IFY4 (ie, the position of the
掃描曝光處理結束後,搬出基板P(步驟S23)。After the scanning exposure process is completed, the board|substrate P is carried out (step S23).
其次,判斷是否需要校準(步驟S25)。例如,於上次之校準後經掃描曝光處理之基板P之數量達到既定塊數(例如10塊)之情形時,判斷為需要校準。或於每天過了既定之時刻之情形時,判斷為需要校準。Next, it is judged whether calibration is required (step S25). For example, when the number of substrates P subjected to scanning exposure processing reaches a predetermined number (for example, 10) after the previous calibration, it is determined that calibration is necessary. Or when a predetermined time has passed every day, it is judged that calibration is required.
於不需要校準之情形時(步驟S25/否),返回步驟S15。另一方面,於需要校準之情形時(步驟S25/是),進行校準(步驟S27)。When calibration is unnecessary (step S25/No), return to step S15. On the other hand, when calibration is required (step S25/Yes), calibration is performed (step S27).
其次,修正資料製作部302以根據步驟S27中之校準結果修正曝光裝置EX之各裝置之位置偏移之方式製作用以修正DMD10之微動載台10S之驅動量、投影單元PLU之光學系之驅動量或光學元件OPE之驅動量之修正資料(步驟S29)。Next, the correction
其次,於曝光裝置EX本體部中搬入新基板P,並載置於基板保持具4B上(步驟S31)。Next, a new substrate P is loaded into the exposure apparatus EX main body, and placed on the
其次,利用複數個對準系ALG計測於新搬入之基板P上之既定之複數個位置形成之對準標記(步驟S33)。Next, the alignment marks formed at predetermined plural positions on the board|substrate P carried in newly are measured using several alignment systems ALG (step S33).
其次,根據對準系ALG之計測結果,控制資料製作部301以修正基板P之位置偏移之方式,製作規定DMD10之微動載台10S之驅動量、投影單元PLU之光學系之驅動量、及光學元件OPE之驅動量的第一控制資料(步驟S35)。Next, based on the measurement results of the alignment system ALG, the control
其次,驅動控制部304生成藉由步驟S29中所製作之修正資料修正步驟S35中所製作之第一控制資料而得之第二控制資料(步驟S37)。Next, the
再者,亦可省略步驟S29,驅動控制部304根據第一控制資料與校準結果,製作第二控制資料。Furthermore, step S29 may also be omitted, and the
其次,模組MUn(n=1~27)根據描繪資料MDn與驅動量控制資料CDn,將顯示面板等之圖案於基板P上掃描曝光(步驟S39)。此時之驅動量控制資料CDn係根據干涉計IFY1~IFY4之計測結果(即基板保持具4B之位置)即時修正第二控制資料所取得之資料(第三控制資料)。Next, the module MUn (n=1-27) scans and exposes the pattern of the display panel on the substrate P according to the drawing data MDn and the driving amount control data CDn (step S39 ). The driving amount control data CDn at this time is the data obtained by correcting the second control data (third control data) in real time based on the measurement results of the interferometers IFY1-IFY4 (ie, the position of the
掃描曝光處理結束後,搬出基板P(步驟S41)。After the scanning exposure process is completed, the board|substrate P is carried out (step S41).
其次,判斷是否需要校準(步驟S43)。例如,於上次之校準後經掃描曝光處理之基板P之數量達到既定塊數(例如10塊)之情形時,判斷為需要校準。Next, it is judged whether calibration is required (step S43). For example, when the number of substrates P subjected to scanning exposure processing reaches a predetermined number (for example, 10) after the previous calibration, it is determined that calibration is necessary.
於不需要校準之情形時(步驟S43/否),返回步驟S31。另一方面,於需要校準之情形時(步驟S43/是),進行校準(步驟S27)。When calibration is not required (step S43/No), return to step S31. On the other hand, when calibration is required (step S43/Yes), calibration is performed (step S27).
如上所述,於既定塊數之顯示面板之製造結束前,重複圖9之處理。再者,亦可省略步驟S25~步驟S29之處理。於此情形時,不進行步驟S31之後之處理,於步驟S23結束後返回步驟S15即可。於此情形時,於步驟S21中,驅動控制部304將根據干涉計IFY1~IFY4之計測結果(即基板保持具4B之位置)即時修正第一控制資料所得之驅動量控制資料CDn送出至各模組MUn即可。As described above, the process of FIG. 9 is repeated until the production of a predetermined number of display panels is completed. Furthermore, the processing of steps S25 to S29 may also be omitted. In this case, the processing after step S31 is not performed, and it is sufficient to return to step S15 after step S23 is completed. In this case, in step S21, the driving
如以上所詳細說明般,根據本實施形態,曝光裝置EX具備基板保持具4B及複數個模組MU1~MU27,該複數個模組MU1~MU27分別包含生成與描繪資料MDn(n=1~27)相對應之圖案之DMD10、對DMD10分別照射照明光之複數個照明單元ILU、將由DMD10分別形成之圖案投影至載置於基板保持具4B上之基板P上的複數個投影單元PLU。曝光裝置EX進而具備驅動控制部304,該驅動控制部304不變更描繪資料MDn,而根據基板P之狀態、基板保持具4B之狀態、及曝光裝置EX之狀態之至少一者,控制模組MU1~MU27各自之DMD10之驅動、投影單元PLU之驅動、及光學元件OPE之驅動。於根據基板P之狀態、基板保持具4B之狀態、及曝光裝置EX之狀態之至少一者,以於基板P之既定之位置曝光既定之圖案之方式改寫描繪資料MDn之情形時,描繪資料MDn之改寫耗費時間,曝光裝置EX之產量降低。由於驅動控制部304不變更描繪資料MDn,而根據基板P之狀態、基板保持具4B之狀態、及曝光裝置EX之狀態之至少一者控制DMD10之驅動、投影單元PLU之驅動、及光學元件OPE之驅動,故而能夠抑制曝光裝置EX之產量降低,並且於基板P之既定之位置曝光既定之圖案。又,於位置偏移量小於投影至基板P之圖案之最小線寬(最小像素尺寸)之情形時,藉由描繪資料之改寫難以修正位置偏移。於本實施形態中,藉由DMD10之驅動、投影單元PLU之驅動、及光學元件OPE之驅動修正位置偏移,因此即使於位置偏移量小於投影至基板P之圖案之最小線寬之情形時,亦能夠修正位置偏移。藉此,曝光精度提高。As described in detail above, according to the present embodiment, the exposure apparatus EX includes a
又,於本實施形態中,曝光裝置EX具備:對準系ALG,計測基板P相對於基板保持具4B之狀態;及控制資料製作部,製作第一控制資料,該第一控制資料係根據對準系ALG之計測結果,以將圖案投影至基板P之既定之位置之方式,控制DMD10之微動載台10S、投影單元PLU之光學系、及光學元件OPE之至少一者之驅動。並且,驅動控制部304根據第一控制資料,控制DMD10之微動載台10S之驅動、投影單元PLU之光學系之驅動、及光學元件OPE之驅動。藉此,能夠於不降低產量之情況下,修正基板P相對於設計位置之位置偏移,而於基板P曝光圖案。又,即使於位置偏移量小於投影至基板P之圖案之最小線寬之情形時,亦能夠修正位置偏移。Also, in this embodiment, the exposure apparatus EX is provided with: an alignment system ALG for measuring the state of the substrate P relative to the
又,於本實施形態中,曝光裝置EX具備修正資料製作部302,該修正資料製作部302根據校準結果,製作修正第一控制資料之修正資料,驅動控制部304根據藉由修正資料對第一控制資料進行修正而得之第二控制資料,控制DMD10之微動載台10S之驅動、投影單元PLU之光學系之驅動、及光學元件OPE之驅動。藉此,能夠於不降低產量之情況下,修正曝光裝置EX之各構成之位置偏移,而於基板P曝光圖案。又,即使於曝光裝置EX之各構成之位置偏移量小於投影至基板P之圖案之最小線寬之情形時,亦能夠修正位置偏移。Also, in this embodiment, the exposure apparatus EX is provided with a correction
又,於本實施形態中,曝光裝置EX具備干涉計IFY1~IFY4,該干涉計IFY1~IFY4計測基板保持具4B相對於定盤3或光學定盤5之位置資訊,驅動控制部304根據藉由干涉計IFY1~IFY4所計測之基板保持具4B之位置資訊,根據修正第二控制資料後之驅動量控制資料CDn(n=1~27)控制各模組MUn之DMD10之微動載台10S之驅動、投影單元PLU之光學系之驅動、及光學元件OPE之驅動。藉此,於掃描曝光期間中,即使於基板保持具4B未如設計值般移動之情形時,亦能夠於不降低產量之情況下,於基板P之設計上之位置曝光既定之圖案。又,即使於基板保持具4B之位置偏移量小於投影至基板P之圖案之最小線寬之情形時,亦能夠修正位置偏移。In addition, in this embodiment, the exposure apparatus EX includes interferometers IFY1 to IFY4 that measure the position information of the
(變形例) 上述實施形態之曝光裝置EX亦可用於對已曝光既定之圖案之基板P曝光其他圖案之情形。 (modified example) The exposure apparatus EX of the said embodiment can also be used for exposing other patterns to the board|substrate P which exposed the predetermined pattern.
於平板顯示器之製造中,存在於在基板P曝光第一圖案後,曝光與第一圖案不同之第二圖案之情形。例如,第1次藉由使用光罩基板之曝光裝置於基板P曝光第一圖案,第2次藉由本實施形態之曝光裝置EX於基板P曝光第二圖案。In the manufacture of a flat panel display, after exposing the first pattern on the substrate P, there is a case where a second pattern different from the first pattern is exposed. For example, the first pattern is exposed on the substrate P by the exposure apparatus using the mask substrate for the first time, and the second pattern is exposed on the substrate P by the exposure apparatus EX of this embodiment for the second time.
圖10係表示於1塊基板P曝光4塊顯示面板用之圖案之情形之圖。於圖10之例中,藉由第1次曝光處理於1塊基板P曝光4塊顯示面板PNL1~PNL4之圖案。於圖10中,影線部分表示藉由第1次曝光處理所曝光之區域,各區域中之黑圓點表示對準標記AM。又,於圖10中,虛線表示分離各面板時之切斷線,單點鏈線表示應藉由第1次曝光處理曝光顯示面板PNL2及其對準標記AM之位置。FIG. 10 is a diagram showing how patterns for four display panels are exposed on one substrate P. As shown in FIG. In the example of FIG. 10 , the patterns of four display panels PNL1 to PNL4 are exposed on one substrate P by the first exposure process. In FIG. 10 , the hatched portion represents the region exposed by the first exposure process, and the black circle in each region represents the alignment mark AM. In addition, in FIG. 10 , the dotted line indicates the cutting line for separating each panel, and the dot chain line indicates the position where the display panel PNL2 and its alignment mark AM should be exposed by the first exposure process.
於圖10之例中,與其他顯示面板PNL1、PNL3、PNL4相比,顯示面板PNL2之圖案自設計位置大幅偏移而曝光。於此種情形時,若以重合於顯示面板PNL2之第1次曝光處理之已曝光區域之方式改寫第2次曝光處理之描繪資料,則描繪資料之改寫耗費較長時間,產量降低。In the example of FIG. 10, compared with other display panels PNL1, PNL3, PNL4, the pattern of the display panel PNL2 is shifted and exposed largely from a design position. In this case, if the drawing data of the second exposure process is rewritten so as to overlap the exposed area of the first exposure process of the display panel PNL2, the rewriting of the drawing data will take a long time and the yield will decrease.
於此種情形時,根據上述實施形態之曝光裝置EX,可以如下所述般重合於顯示面板PNL2之第一圖案之已曝光區域之方式曝光第二圖案。In this case, according to the exposure apparatus EX of the said embodiment, it can expose a 2nd pattern so that it may overlap with the exposed area|region of the 1st pattern of the display panel PNL2 as follows.
首先,藉由對準系ALG計測實際曝光顯示面板PNL1~PNL4之第一圖案之區域之位置。控制資料製作部301根據對準系ALG之計測結果,以修正顯示面板PNL2之第一圖案之已曝光區域相對於設計位置之偏移之方式,製作第一控制資料。藉由驅動控制部304根據第一控制資料控制模組MU1~MU27之DMD10之微動載台10S及投影單元PLU之光學系之驅動,可對於自設計位置偏移而曝光第一圖案之顯示面板PNL2,於第一圖案之已曝光區域曝光第二圖案。Firstly, the positions of the regions of the first patterns that are actually exposed to the display panels PNL1 - PNL4 are measured by the alignment system ALG. Based on the measurement result of the alignment system ALG, the control
即,於變形例中,亦可認為針對顯示面板PNL1~PNL4之各區域製作與已曝光區域相對於設計位置之位置偏移相應之第一控制資料。That is, in the modified example, it can also be considered that the first control data corresponding to the position shift of the exposed area relative to the designed position is created for each area of the display panels PNL1 to PNL4.
如上所述,於對於已曝光複數個第一圖案之1塊基板P,必須使第二圖案重疊於第一圖案之已曝光區域進行曝光之情形時,即使第一圖案之已曝光區域自設計位置偏移,於本實施形態之曝光裝置EX中,亦可於不降低產量之情況下,將第二圖案重合於第一圖案之已曝光區域進行曝光。As mentioned above, when exposing a substrate P on which a plurality of first patterns have been exposed, the second pattern must overlap the exposed area of the first pattern, even if the exposed area of the first pattern is from the designed position Offset, in the exposure device EX of this embodiment, the second pattern can be superimposed on the exposed area of the first pattern for exposure without reducing the throughput.
再者,此時,為了使顯示面板PNL1之曝光區域與顯示面板PNL2之曝光區域之間之距離D1發生像位移,較佳為相較於自顯示面板PNL1之圖案之曝光結束時之DMD10之微動載台10S之狀態、投影單元PLU之光學系之狀態、及光學元件OPE之狀態變更為用以對顯示面板PNL2進行曝光之狀態所需之時間,而將基板保持具4B移動距離D1之時間設定為較長。此處,微動載台10S之狀態係指DMD10相對於基板保持具4B、XY載台4A、光學定盤5或定盤3之相對位置資訊或θz軸方向之傾斜角度等。又,投影單元PLU之光學系之狀態係指第一透鏡組116、第二透鏡組118、第一透鏡組116與第二透鏡組118所包含之各透鏡相對於基板保持具4B、XY載台4A、光學定盤5或定盤3之相對位置資訊等。進而,光學元件OPE之狀態係指光學元件OPE相對於基板保持具4B、XY載台4A、光學定盤5或定盤3之相對位置資訊等。又,若光學元件OPE為一對偏角稜鏡,則一對偏角稜鏡之間隔或各偏角稜鏡之旋轉角等亦包含於光學元件OPE之狀態中。又,若光學元件OPE為一對平行平板,則一對平行平板之間隔或各平行平板之旋轉角等亦包含於光學元件OPE之狀態中。因此,上述實施形態之曝光裝置EX能夠以一次掃描曝光對顯示面板PNL1與顯示面板PNL2進行曝光。又,曝光裝置EX於以一次掃描曝光進行曝光之情形時,於將顯示面板PNL1之曝光區域曝光後,於在距離D1上前進期間,將顯示面板PNL1之圖案之曝光結束時之DMD10之微動載台10S之狀態、投影單元PLU之光學系之狀態、及光學元件OPE之狀態之至少一者變更為用以對顯示面板PNL2進行曝光之狀態,而對顯示面板PNL2之曝光區域進行曝光。Furthermore, at this time, in order to cause the image displacement to occur in the distance D1 between the exposure area of the display panel PNL1 and the exposure area of the display panel PNL2, it is preferable to slightly move the DMD10 compared to the end of the exposure of the pattern from the display panel PNL1. The state of the stage 10S, the state of the optical system of the projection unit PLU, and the state of the optical element OPE are changed to the time required for exposing the display panel PNL2, and the time setting for moving the
曝光裝置EX所具備之曝光控制裝置300(驅動控制部304)使XY載台4A沿著掃描方向(X軸方向)移動,對基板P之顯示面板PNL1之曝光區域進行曝光後,對顯示面板PNL2之曝光區域進行曝光,於投影光學系於顯示面板PNL1之曝光區域與顯示面板PNL2之曝光區域之間之距離D1上前進期間變更曝光裝置EX之設定。The exposure control device 300 (drive control unit 304 ) included in the exposure device EX moves the
曝光裝置EX所具備之曝光控制裝置300(驅動控制部304)藉由控制DMD10之微動載台10S、或投影光學系之驅動,而變更曝光裝置EX之設定。The exposure control device 300 (drive control unit 304 ) included in the exposure device EX changes the setting of the exposure device EX by controlling the fine movement stage 10S of the
又,曝光裝置EX所具備之控制部對XY載台4A、改變空間光調變器10之位置及姿勢之至少一者之微動載台驅動部10D、及設置於投影光學系內並驅動第一透鏡組116、第二透鏡組118、光學元件OPE之驅動部進行控制,以基板P上沿著掃描方向(X軸方向)排列之顯示面板PNL1之曝光區域與顯示面板PNL2之曝光區域相對於投影光學系之光軸向掃描方向(X軸方向)之相同側移動之方式驅動XY載台4A,並且於沿著掃描方向(X軸方向)移動之基板P上以顯示面板PNL1之曝光區域與顯示面板PNL2之曝光區域之間之區域(距離D)與上述光軸交叉之狀態驅動微動載台驅動部10D及驅動第一透鏡組116、第二透鏡組118、光學元件OPE之驅動部之至少一者。In addition, the control section included in the exposure apparatus EX drives the
若以上述方式設定距離D1,則無需等待DMD10之微動載台10S之狀態、投影單元PLU之光學系之狀態、及光學元件OPE之狀態成為用以進行顯示面板PNL2之曝光之狀態,即可繼續進行曝光處理,因此能夠提高產量。If the distance D1 is set in the above manner, there is no need to wait for the state of the fine movement stage 10S of the
再者,例如,於顯示面板PNL2之第1次曝光處理導致之已曝光區域相對於設計值之位置偏移為即使驅動DMD10之微動載台10S、投影單元PLU之光學系、及光學元件OPE使圖案之投影位置偏移亦無法修正之量之情形時,可不開始曝光處理,而是將該資訊顯示於曝光裝置EX所具備之顯示裝置,由曝光裝置EX之操作員選擇是否繼續曝光處理。或是可由曝光裝置EX輸出警告。或是可使操作員能夠選擇是否繼續曝光處理、是否中止曝光處理、是否曝光已知對於基板P而言為不良品之圖案。Furthermore, for example, the position deviation of the exposed area relative to the design value caused by the first exposure process of the display panel PNL2 is even if the micro-motion stage 10S of the DMD10, the optical system of the projection unit PLU, and the optical element OPE are used When the projection position of the pattern deviates by an amount that cannot be corrected, the exposure process may not be started, but the information is displayed on the display device of the exposure device EX, and the operator of the exposure device EX can choose whether to continue the exposure process. Alternatively, a warning may be output from the exposure device EX. Alternatively, the operator can choose whether to continue the exposure process, whether to suspend the exposure process, or whether to expose patterns known to be defective on the substrate P.
又,顯示面板PNL1之第1次曝光處理之曝光結果(曝光形狀)存在並非如圖10之PNL1之四邊形,而是成為如圖11(A)之桶型形狀或如圖11(B)之卷線軸型形狀之情形。於此種情形時,於對顯示面板PNL1進行第2次曝光時,需要於顯示面板PNL1之各位置一邊進行像位移一邊進行曝光。因此,根據利用對準系ALG獲得之顯示面板PNL1之對準標記AM之計測結果,於對顯示面板PNL1進行曝光之過程中即時驅動DMD10之微動載台10S、投影單元PLU之光學系及光學元件OPE。藉此,能夠於顯示面板PNL1之各位置修正圖案之投影位置。又,顯示面板PNL1之形狀不限於此,亦包含如圖11(C)般PNL1之右側為桶型形狀且PNL1之左側為卷線軸形狀之將2個形狀組合之情形。進而,此種曝光結果不限於PNL1,對於PLN2~4亦存在成為同樣之曝光結果之情形。In addition, the exposure result (exposure shape) of the first exposure process of the display panel PNL1 is not a quadrilateral of PNL1 as shown in Figure 10, but a barrel shape as shown in Figure 11(A) or a roll as shown in Figure 11(B) In the case of a bobbin shape. In such a case, when exposing the display panel PNL1 for the second time, it is necessary to perform exposure while performing an image shift at each position of the display panel PNL1. Therefore, based on the measurement result of the alignment mark AM of the display panel PNL1 obtained by the alignment system ALG, the fine movement stage 10S of the DMD10, the optical system and the optical elements of the projection unit PLU are driven in real time during the exposure process of the display panel PNL1 OPE. Thereby, the projection position of a pattern can be corrected at each position of the display panel PNL1. In addition, the shape of the display panel PNL1 is not limited thereto, and the right side of the PNL1 is in the shape of a barrel and the left side of the PNL1 is in the shape of a bobbin as shown in FIG. 11(C) . Furthermore, such an exposure result is not limited to PNL1, and the same exposure result may be obtained also in PLN2-4.
又,上述實施形態之曝光裝置EX能以一次掃描曝光對顯示面板PNL1與顯示面板PNL3進行曝光。為了將顯示面板PNL1與顯示面板PNL3同時曝光,對準系ALG進行顯示面板PNL1之對準標記AM之計測(第一計測)與顯示面板PNL3之對準標記AM之計測(第二計測)這2個顯示面板PNL1、PLN3之對準計測。藉由進行第一計測,能夠計測顯示面板PNL1之曝光結果,藉由進行第二計測,能夠計測顯示面板PNL3之曝光結果。又,上述實施形態之曝光裝置EX能以一次掃描曝光對顯示面板PNL1與顯示面板PNL2進行曝光。顯示面板PNL1之曝光區域與顯示面板PNL2之曝光區域之間之距離D1可設定為大於曝光模組之曝光視野。又,於精度無問題之情形時,距離D1亦可設定為小於曝光模組之曝光視野。Moreover, the exposure apparatus EX of said embodiment can expose display panel PNL1 and display panel PNL3 by one scanning exposure. In order to simultaneously expose the display panel PNL1 and the display panel PNL3, the alignment system ALG performs two measurements of the alignment mark AM of the display panel PNL1 (first measurement) and the measurement of the alignment mark AM of the display panel PNL3 (second measurement). Alignment measurement of display panels PNL1 and PLN3. By performing the first measurement, the exposure result of the display panel PNL1 can be measured, and by performing the second measurement, the exposure result of the display panel PNL3 can be measured. Moreover, the exposure apparatus EX of said embodiment can expose display panel PNL1 and display panel PNL2 by one scanning exposure. The distance D1 between the exposure area of the display panel PNL1 and the exposure area of the display panel PNL2 can be set to be greater than the exposure field of view of the exposure module. In addition, when there is no problem with the accuracy, the distance D1 can also be set to be smaller than the exposure field of view of the exposure module.
進而,於曝光模組群組MU(A)中,使用模組MU1~MU4對PNL3進行曝光,使用模組MU5~MU9對PNL1進行曝光。此時,模組MU1~MU4於曝光顯示面板PNL3之過程中,根據第二計測之計測結果,即時驅動DMD10之微動載台10S、投影單元PLU之光學系及光學元件OPE,一邊修正圖案之投影位置一邊進行曝光。模組MU5~MU9於曝光顯示面板PNL1之過程中,根據第一計測之計測結果,即時驅動DMD10之微動載台10S、投影單元PLU之光學系及光學元件OPE,一邊修正圖案之投影位置一邊進行曝光。藉此,能以一次掃描曝光一邊修正複數個面板PNL1與PLN3一邊進行曝光。Furthermore, in exposure module group MU (A), PNL3 is exposed using modules MU1-MU4, and PNL1 is exposed using modules MU5-MU9. At this time, during the process of exposing the display panel PNL3, the modules MU1-MU4 drive the micro-motion stage 10S of the DMD10, the optical system and the optical element OPE of the projection unit PLU in real time according to the measurement results of the second measurement, and correct the projection of the pattern. exposure on one side of the position. During the process of exposing the display panel PNL1, the modules MU5-MU9 drive the fine movement stage 10S of the DMD10, the optical system and the optical element OPE of the projection unit PLU in real time according to the measurement results of the first measurement, and correct the projection position of the pattern while correcting exposure. Thereby, it is possible to perform exposure while correcting a plurality of panels PNL1 and PLN3 by one scanning exposure.
此處,設為模組MU1~MU4對顯示面板PNL3進行曝光,模組MU5~MU9對顯示面板PNL1進行曝光,但可適當設定。又,曝光模組群組MU(B)、曝光模組群組MU(C)亦與曝光模組群組MU(A)相同。Here, it is assumed that the modules MU1 to MU4 expose the display panel PNL3, and the modules MU5 to MU9 expose the display panel PNL1, but they can be appropriately set. Moreover, the exposure module group MU(B) and the exposure module group MU(C) are also the same as the exposure module group MU(A).
又,例如,於顯示面板PNL1之曝光區域與顯示面板PNL2之曝光區域之間之距離D1較短,而於基板保持具4B移動距離D1期間來不及進行DMD10之微動載台10S之驅動、投影單元PLU之光學系之驅動、或光學元件OPE之驅動之情形時,亦可將該資訊顯示於曝光裝置EX所具備之顯示裝置,由曝光裝置EX之操作員選擇是否繼續曝光處理。或是可使操作員能夠選擇是否繼續曝光處理、是否中止曝光處理、是否曝光已知對於基板P而言為不良品之圖案。Also, for example, the distance D1 between the exposure area of the display panel PNL1 and the exposure area of the display panel PNL2 is relatively short, and there is no time to drive the micro-motion stage 10S of the DMD10 and the projection unit PLU during the movement distance D1 of the
再者,於上述實施形態及變形例中,驅動控制部304對DMD10之微動載台10S之驅動、投影單元PLU之光學系之驅動、及光學元件OPE之驅動進行控制,但不限於此。驅動控制部304控制DMD10之微動載台10S、投影單元PLU之光學系、及光學元件OPE之任一者之驅動即可。再者,於對準系ALG、校準、由干涉計IFY1~IFY4所計測之位置偏移量超過操作員事先確定規定量時,可預先確定是否曝光、是否繼續曝光、是否再次重新對準等作為配方資訊(曝光條件)。Furthermore, in the above-mentioned embodiments and modifications, the
又,於上述實施形態中,驅動控制部304根據干涉計IFY1~IFY4之計測結果修正第一控制資料或第二控制資料,亦可不根據干涉計IFY1~IFY4之計測結果進行修正。於此情形時,驅動控制部304根據第一控制資料或第二控制資料控制DMD10之微動載台10S之驅動、投影單元PLU之光學系之驅動、及光學元件OPE之驅動即可。In addition, in the above embodiment, the
上述實施形態係本發明之較佳之實施例。但不限定於此,可於不脫離本發明之要旨之範圍內實施各種變形。The foregoing embodiments are preferred embodiments of the present invention. However, it is not limited to this, and various deformation|transformation can be implemented in the range which does not deviate from the gist of this invention.
1a、1b、1c:主動防振單元 2:底座 3:定盤 4A:XY載台 4B:基板保持具(第一移動體) 5:光學定盤 6a、6b、6c:主柱 10:DMD 10a:微鏡 10D:微動載台驅動部(第二驅動部) 10M:裝配部 10S:微動載台(第二移動體) 60:對準裝置 60a:基準標記 60e:二維攝影元件 100、102:反射鏡 104:輸入透鏡系 106:照度調整濾光片 108:光學積分器 108A:MFE透鏡 110:聚光透鏡系 112:傾斜反射鏡 114:可動擋板 116:第一透鏡組 117:光吸收體 118:第二透鏡組 300:曝光控制裝置 301:控制資料製作部 302:修正資料製作部 304:驅動控制部 306:曝光控制部 310:描繪資料記憶部 600a、600b:偏角稜鏡 601a、601b:平行平板 ALG:對準系 AM:對準標記 AXa~AXc:光軸 CD1~CD27:驅動量控制資料 CU:校正用基準部 EX:曝光裝置 FB18:光纖束 FBU:光纖單元 IA1~IAn:投影區域 IFX、IFY1~IFY4:干涉計(計測部) ILm:照明光 ILU:照明單元 k1~k3:線 MU(A)、MU(B)、MU(C):曝光模組群組 MU1~MU27:模組 OLa、OLb、OLc:中繼部 OPE:光學元件 P:基板 PLf':圓形像場 PLU:投影單元 PNL1~PNL4:顯示面板 XL1、XL2:距離 1a, 1b, 1c: active anti-vibration unit 2: base 3:Fixed 4A: XY stage 4B: Substrate holder (first moving body) 5: Optical fixed plate 6a, 6b, 6c: main column 10: DMD 10a: Micromirror 10D: Micro-motion stage driving part (second driving part) 10M: Assembly Department 10S: micro-motion stage (second moving body) 60: Alignment device 60a: Fiducial mark 60e: Two-dimensional photography components 100, 102: reflector 104: Input lens system 106: Illumination adjustment filter 108: Optical integrator 108A: MFE lens 110: Concentrating lens system 112: Tilting mirror 114: Movable baffle 116: the first lens group 117: light absorber 118: Second lens group 300: exposure control device 301: Control Data Production Department 302: Correction data production department 304: Drive control department 306: Exposure Control Department 310: Depict data memory department 600a, 600b: declination angle 601a, 601b: parallel plates ALG: alignment system AM: Alignment Mark AXa~AXc: optical axis CD1~CD27: driving quantity control data CU: Reference Unit for Calibration EX: Exposure device FB18: Fiber Optic Bundle FBU: Fiber Optic Unit IA1~IAn: projection area IFX, IFY1~IFY4: Interferometer (measurement department) ILm: illumination light ILU: Lighting Unit k1~k3: line MU(A), MU(B), MU(C): exposure module group MU1~MU27: module OLa, OLb, OLc: relay unit OPE: optical element P: Substrate PLf': circular image field PLU: projection unit PNL1~PNL4: display panel XL1, XL2: Distance
[圖1]係表示一實施形態之曝光裝置之外觀構成之概要的立體圖。 [圖2]係表示藉由複數個曝光模組各自之投影單元投射至基板上之DMD之投影區域之配置例的圖。 [圖3]係對圖2中特定之4個投影區域各自之聯合曝光之狀態進行說明之圖。 [圖4]係於XZ面內觀察沿著X方向(掃描曝光方向)排列之2個曝光模組之具體構成之光學配置圖。 [圖5(A)]係概略性地表示DMD之圖,圖5(B)係表示電源關閉之情形時之DMD之圖,圖5(C)係用以對開啟狀態之反射鏡進行說明之圖,圖5(D)係用以對關閉狀態之反射鏡進行說明之圖。 [圖6(A)]及[圖6(B))係對設置於DMD與投影單元之第一透鏡組之間之光學元件進行說明之圖。 [圖7]係表示於附設於曝光裝置之基板保持具上之端部的校正用基準部設置之對準裝置之概略構成的圖。 [圖8]係表示曝光控制裝置之功能構成之功能方塊圖。 [圖9]係表示對基板進行曝光處理之情形時之順序之概要的流程圖。 [圖10]係表示於1塊基板將4塊顯示面板之圖案進行曝光之情形之圖。 [圖11(A)~圖11(C)]係表示顯示面板之第1次曝光處理之曝光結果之例的圖。 [FIG. 1] It is a perspective view which shows the outline of the external appearance structure of the exposure apparatus which concerns on one embodiment. [Fig. 2] is a diagram showing an arrangement example of the projection area of the DMD projected onto the substrate by the respective projection units of a plurality of exposure modules. [FIG. 3] It is a figure explaining the joint exposure state of each of the 4 projection areas specified in FIG. 2. [FIG. [Fig. 4] It is an optical configuration diagram of the specific composition of two exposure modules arranged along the X direction (scanning exposure direction) observed in the XZ plane. [Fig. 5(A)] is a diagram schematically showing the DMD, Fig. 5(B) is a diagram showing the DMD when the power is turned off, and Fig. 5(C) is used to explain the reflector in the open state Fig. 5(D) is a diagram for explaining the mirror in the closed state. [FIG. 6(A)] and [FIG. 6(B)) are diagrams for explaining optical elements provided between the DMD and the first lens group of the projection unit. [ Fig. 7] Fig. 7 is a diagram showing a schematic configuration of an alignment device provided on a calibration reference portion attached to an end portion of a substrate holder of an exposure apparatus. [ Fig. 8 ] is a functional block diagram showing the functional configuration of the exposure control device. [FIG. 9] It is a flow chart which shows the outline|summary of the procedure at the time of performing exposure processing to a board|substrate. [FIG. 10] It is a figure which shows the state of exposing the pattern of 4 display panels on 1 board|substrate. [ FIGS. 11(A) to 11(C)] are diagrams showing examples of exposure results of the first exposure process of the display panel.
300:曝光控制裝置 300: exposure control device
301:控制資料製作部 301: Control Data Production Department
302:修正資料製作部 302: Correction data production department
304:驅動控制部 304: Drive control department
306:曝光控制部 306: Exposure Control Department
310:描繪資料記憶部 310: Depict data memory department
ALG:對準系 ALG: alignment system
CD1~CD27:驅動量控制資料 CD1~CD27: driving volume control data
IFY1~IFY4:干涉計(計測部) IFY1~IFY4: Interferometer (measurement department)
MD1~MD27:描繪資料 MD1~MD27: depict data
MU1~MU3、MU26、MU27:模組 MU1~MU3, MU26, MU27: modules
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