TW202308761A - Purge controlling system - Google Patents
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本發明涉及一種半導體技術領域,特別是一種利用晶圓盒載運晶圓時,控制氣體流量以層流或均勻氣流的方式來潔淨晶圓承載裝置的吹淨控制系統。The invention relates to the technical field of semiconductors, in particular to a blowing control system for cleaning a wafer carrying device by controlling gas flow in laminar or uniform air flow when a wafer is carried by a wafer cassette.
現有的半導體生產廠房中,設置有多種用以傳遞晶圓盒的設備,而這些設備大多是不同廠商所生產,因此,晶圓盒在不同廠商所生產的設備中傳遞時,可能會發生當晶圓盒的門體開啟時,晶圓盒的內部直接與外界環境接觸或是連通的狀態,據此,晶圓盒外部的髒污或是微粒容易進入晶圓盒中,導致晶圓盒內的晶圓受到污染。In the existing semiconductor production plant, there are many kinds of equipment for transferring wafer boxes, and most of these equipments are produced by different manufacturers. Therefore, when the wafer boxes are transferred among the equipment produced by different manufacturers, it may happen When the door of the wafer box is opened, the inside of the wafer box is directly in contact with or communicated with the external environment. Accordingly, dirt or particles outside the wafer box can easily enter the wafer box, resulting in Wafer is contaminated.
根據現有技術的缺點,本發明的主要目的是利用控制模組控制氣簾單元可依據晶圓承載裝置的門組件的位移值大小來調節提供潔淨氣體流量,以避免大氣體流量的潔淨氣體對晶圓盒充氣時產生擾流,導致環境中的髒污或是微粒因氣體擾流而被帶入晶圓盒中而污染晶圓盒中的半導體元件。According to the shortcomings of the prior art, the main purpose of the present invention is to use the control module to control the air curtain unit to adjust the flow of clean gas according to the displacement value of the door assembly of the wafer carrier device, so as to avoid the impact of the clean gas with a large gas flow on the wafer. Turbulent flow is generated when the box is inflated, causing dirt or particles in the environment to be brought into the wafer box due to gas turbulence and pollute the semiconductor elements in the wafer box.
本發明的又一目的在於控制潔淨氣體進入氣簾單元的流速及壓力以調控由氣簾單元吹出的潔淨氣體以層流狀態流動,以解決潔淨氣體的擾流流動而將髒污帶入晶圓盒中而污染晶圓盒中的半導體元件的技術問題。Another object of the present invention is to control the flow rate and pressure of the clean gas entering the air curtain unit to regulate the clean gas blown out by the air curtain unit to flow in a laminar flow state, so as to solve the turbulent flow of the clean gas and bring dirt into the wafer cassette And the technical problem of contaminating the semiconductor components in the wafer cassette.
本發明的另一目的在於利用在晶圓承載裝置上的感測單元來偵測門組件的位移值的大小,可依據此門組件的位移值的大小調節送入氣簾單元的潔淨氣體的氣體流量,以解決現有技術中無論晶圓承載裝置的門組件開啟門體後位移量大小,氣簾裝置都提供相同氣體流量的潔淨氣體,而造成潔淨氣體的浪費使得使用成本提高的問題。Another object of the present invention is to use the sensing unit on the wafer carrying device to detect the displacement value of the door assembly, and adjust the gas flow rate of the clean gas sent into the air curtain unit according to the displacement value of the door assembly , to solve the problem in the prior art that regardless of the displacement of the door assembly of the wafer carrier device after opening the door body, the air curtain device provides clean gas with the same gas flow rate, resulting in waste of clean gas and increased use costs.
本發明的再一目的在於氣簾裝置的透氣板具有多個氣孔,且透氣板可以是不鏽鋼或是超高分子量聚乙烯(UPE,ultra-high molecular weight polyethylene)以增加透氣板的耐壓度且可以提高潔淨氣體的氣體流量。Another object of the present invention is that the air-permeable plate of the air curtain device has a plurality of air holes, and the air-permeable plate can be stainless steel or ultra-high molecular weight polyethylene (UPE, ultra-high molecular weight polyethylene) to increase the pressure resistance of the air-permeable plate and can Increase the gas flow of clean gas.
根據上述目的,本發明提供一種吹淨控制系統,與晶圓承載裝置連接,吹淨控制系統包括:吹淨模組及控制模組,其中吹淨模組設置於晶圓承載裝置內以及控制模組與吹淨模組電性連接。吹淨模組包括氣簾單元、流量控制單元以及感測單元。氣簾單元對準設置於晶圓承載裝置的門組件的上方;流量控制單元與氣簾單元連接;及控制模組與吹淨模組電性連接,控制模組根據門組件的位移值來控制吹淨模組提供具有對應的潔淨氣體的氣體流量進入氣簾單元。According to the above purpose, the present invention provides a blowing control system, which is connected with the wafer carrying device. The blowing control system includes: a blowing module and a control module, wherein the blowing module is arranged in the wafer carrying device and the control module The group is electrically connected with the blowing module. The blowing module includes an air curtain unit, a flow control unit and a sensing unit. The air curtain unit is aligned and arranged above the door assembly of the wafer carrier; the flow control unit is connected to the air curtain unit; and the control module is electrically connected to the blowing module, and the control module controls the blowing according to the displacement value of the door assembly The module provides a gas flow with corresponding clean gas into the curtain unit.
在本發明的一較佳實施例中,吹淨模組包括感測單元,設置於晶圓承載裝置上,感測單元用以偵測晶圓承載裝置的門組件的位移狀態以供控制模組判斷供給潔淨氣體的氣體流量。In a preferred embodiment of the present invention, the blowing module includes a sensing unit, which is arranged on the wafer carrier, and the sensing unit is used to detect the displacement state of the door assembly of the wafer carrier for the control module Determine the gas flow rate of the supplied clean gas.
在本發明的一較佳實施例中,氣簾單元包括:本體及透氣板,其中本體的上端及/或側邊設置有至少一個進氣孔,進氣孔與吹淨模組經由管路連通,使得氣簾單元的潔淨氣體經由管路及進氣口進入本體內;以及至少一層透氣板,設置於本體內,透氣板具有多個氣孔,用以將潔淨氣體透過透氣板的多個氣孔由本體向外排出,使得在氣簾單元與晶圓承載裝置的門組件之間形成一道氣流牆。In a preferred embodiment of the present invention, the air curtain unit includes: a body and a breathable plate, wherein at least one air inlet is provided on the upper end and/or side of the body, and the air inlet communicates with the blowing module through a pipeline. The clean gas of the air curtain unit enters the main body through the pipeline and the air inlet; and at least one layer of air-permeable plate is arranged in the main body, and the air-permeable plate has a plurality of air holes for passing the clean gas through the air-permeable plate from the body to the air. Exhaust outside, so that an air flow wall is formed between the air curtain unit and the door assembly of the wafer carrier.
在本發明的一較佳實施例中,透氣板的材質可以是不鏽鋼、抗靜電耐腐蝕的纖維材或是複合材、陶瓷、樹脂、或是超高分子量聚乙烯。In a preferred embodiment of the present invention, the material of the air-permeable plate can be stainless steel, antistatic and corrosion resistant fiber material or composite material, ceramics, resin, or ultra-high molecular weight polyethylene.
在本發明的一較佳實施例中,當透氣板為不鏽鋼時,具有多個氣孔的透氣板的製作方式可以是金屬燒結的方式所形成。In a preferred embodiment of the present invention, when the air-permeable plate is made of stainless steel, the air-permeable plate with a plurality of pores can be made by metal sintering.
在本發明的一較佳實施例中,多個氣孔可以是利用機械鑽孔或是雷射鑽孔的方式所形成。In a preferred embodiment of the present invention, the air holes can be formed by mechanical drilling or laser drilling.
在本發明的一較佳實施例中,透氣板為多個透氣板,每一個透氣板各自具有多個氣孔且這些透氣板在本體內形成至少一個封閉空間。In a preferred embodiment of the present invention, the air-permeable plate is a plurality of air-permeable plates, each air-permeable plate has a plurality of air holes, and these air-permeable plates form at least one closed space in the body.
在本發明的一較佳實施例中,由氣簾單元吹出的潔淨氣體的流速範圍為0.1m/s-2m/s(公尺/秒)。In a preferred embodiment of the present invention, the flow velocity range of the clean gas blown out by the air curtain unit is 0.1 m/s-2 m/s (meter/second).
在本發明的一較佳實施例中,供氣設備與吹淨控制系統連接,其中供氣設備用以提供潔淨氣體,且潔淨氣體可以是純淨乾燥氣體(CDA,clean dry air)、超純淨乾燥氣體(X-CDA,extreme clean dry air)或是惰性氣體。In a preferred embodiment of the present invention, the gas supply equipment is connected to the blowing control system, wherein the gas supply equipment is used to provide clean gas, and the clean gas can be clean dry air (CDA, clean dry air), ultra-pure dry air Gas (X-CDA, extreme clean dry air) or inert gas.
在本發明的一較佳實施例中,由供氣設備提供至吹淨控制系統的潔淨氣體的氣體流量範圍為0-800LPM(公升/分鐘)。In a preferred embodiment of the present invention, the gas flow range of the clean gas supplied from the gas supply equipment to the purge control system is 0-800 LPM (liter/minute).
首先,請參考圖1。圖1是表示本發明所揭露的吹淨控制系統的方塊示意圖。在圖1中,吹淨控制系統1與晶圓承載裝置500連接,其中吹淨控制系統1至少由控制模組2及吹淨模組4所構成,控制模組2用以控制吹淨模組4對於置放在晶圓承載裝置500上的晶圓盒300內的半導體元件(未在圖中表示)進行充氣,以達到充氣/潔淨的目的。First, refer to Figure 1. FIG. 1 is a schematic block diagram showing a blowdown control system disclosed in the present invention. In FIG. 1, the
接著,請參考圖2。圖2是表示本發明所揭露的吹淨控制系統的詳細方塊示意圖。在圖2中,吹淨控制系統1中的吹淨模組4至少由氣簾單元42、感測單元44以及流量控制單元46所組成,其中流量控制單元46分別與氣簾單元42及控制模組2連接,感測單元44用以偵測設置在晶圓承載裝置500的門組件502的位移值,並且將對應於門組件502的位移值的感測訊號傳送至控制模組2,控制模組2可以根據此感測訊號來調控流量控制單元46送入至氣簾單元42的氣體的流速或壓力,從而控制在晶圓承載裝置500的門組件502上方的氣簾單元42朝晶圓盒300的開口側所吹出的氣體流量。在此要說明的是,本發明的氣體流量的控制方式例如將各個氣體流量以配比(recipe)的方式寫入控制模組2內,例如recipe A、recipe B、recipe C、… 、recipe Z,每一個recipe 對應一個氣體流量、又每一個氣體流量數值對應門組件502的位移值。因此,當感測單元44偵測到門組件502的位移值改變時,控制模組2就會依據門組件502的位移值以及對應的recipe來調控流量控制單元46,並依據此recipe來使氣簾單元42提供對應該recipe的氣體流量,因此在本發明中的控制模組2是以多段調控方式來控制提供給氣簾單元42的氣體流量。舉例來說,recipe A、recipe B、recipe C、… 、recipe Z所對應的氣體流量可以是由小到大,當門組件502的位移值小(位移量小)的時候,氣簾單元42吹出的是recipe A所對應的氣體流量;當門組件502的位移值變大(位移量大)至某一範圍的時候,氣簾單元42吹出的是recipe C 所對應的氣體流量。在本發明中,位移值的計算是以門組件502未開啟時為基準。也就是說,當門組件502的位移值逐漸變大時,潔淨氣體的氣體流量可以在門組件502的位移值在某個改變區間時,固定在預設的流量。Next, please refer to Figure 2. FIG. 2 is a detailed block diagram showing the blowdown control system disclosed in the present invention. In FIG. 2, the blowing
此外,進一步說明在本發明中,門組件502的位移值的計算方式,在本發明中是將門組件502未開啟時設為P
0,當門組件502由未開啟P
0到移動至第一定位點P
1時,此時門組件502的第一位移值的大小為P
1-P
0;當門組件502由第一定位點P
1移動至第二定位點P
2,則此時門組件502的第二位移值的大小為P
2-P
0。
In addition, it is further explained that in the present invention, the calculation method of the displacement value of the
更具體的例子是,當門組件502開啟至第一定位點P
1時,氣簾單元42吹出的是recipe A所對應的第一氣體流量。當門組件502開啟至第二定位點P
2時,氣簾單元42吹出的是recipe B 所對應的第二氣體流量,當門組件502開啟至第三定位點P
3時,氣簾單元42吹出的是recipe C 所對應的第三氣體流量,以此類推。當門組件502在第二定位點P
2的第二位移值(P
2-P
0)大於門組件502在第一定位點P
1的第一位移值(P
1-P
0)時,此時第二氣體流量大於第一氣體流量。於另一實施例中,當門組件502在第二定位點P
2的第二位移值(P
2-P
0)小於門組件502在第一定位點P
1的第一位移值(P
1-P
0)時,此時第二氣體流量小於第一氣體流量。當然,本發明並不限制於前述的多段調控方式,在另一實施例中,也可以是無段連續調控氣體流量的方式,亦即,當門組件502的位移值逐漸變大時,也就是晶圓盒300的開口側的開口逐漸變大時,潔淨氣體的氣體流量也跟著逐漸變大。反之,當門組件502的位移值逐漸變小時,也就是晶圓盒300的開口側的開口逐漸變小時,潔淨氣體的氣體流量也跟著逐漸變小。本發明可以有效節省潔淨氣體的使用量,以及降低潔淨氣體使用成本。
A more specific example is that when the
接著,請參考圖3。圖3是表示具有吹淨控制系統的晶圓承載裝置的側視圖。在圖3中,晶圓承載裝置500具有承載盤510用以承載晶圓盒300,晶圓承載裝置500還具有門組件502及門框(未在圖中表示),此門組件502是將設置在承載盤510上的晶圓盒300的門體302開啟,並將門體302帶離晶圓盒300並往下移動一個位移值,使得晶圓盒300的內部與外部環境連通,此時晶圓盒300會露出一個開口,據此,外部的機械手臂或是工作人員可以透過此開口依據需求,將半導體元件例如晶圓(未在圖中表示)置放在晶圓盒300中或是將半導體元件(未在圖中表示)由晶圓盒300中取出。Next, please refer to Figure 3. 3 is a side view showing a wafer carrier with a blowdown control system. In Fig. 3, the wafer carrying
請繼續參考圖3。本發明的吹淨控制系統1中的氣簾單元42對應設置於晶圓承載裝置500的門組件502的上方,且與門組件502之間具有間隔距離,此間隔距離是當氣簾單元42朝向門組件502的方向持續且均勻的噴出潔淨氣體時,潔淨氣體會在此間隔距離形成一道氣流牆AF,此道氣流牆AF較佳是層流氣流,可以降低外部髒污或是微粒被氣流帶入晶圓盒300。此外,氣簾單元42所吹出的氣體流量會隨著門組件502的位移值的大小而改變。另外,可在門組件502的周圍(例如上端5022及/或底部5024)或是門框(未在圖中表示)上設有感測單元46,此感測單元46是用來偵測門組件502的位移狀態的改變(由關閉到開啟)或是移動預定的位移值,再將此位移值所對應的感測訊號傳送至控制模組2(如圖2所示),再由控制模組2調節由氣簾單元42所吹出的氣體流量。Please continue to refer to Figure 3. The
因此,控制模組2(如圖2所示)根據感測單元44偵測到晶圓承載裝置500的門組件502的位移值來控制供氣設備(未在圖中表示)提供具有對應此位移值的氣體流量的潔淨氣體進入吹淨模組4的氣簾單元42,同時控制模組2可根據潔淨氣體送入氣簾單元42的流速或壓力來調控由氣簾單元42吹出的潔淨氣體是較佳以層流狀態流動。另外,門組件502的位移值的改變不一定要由感測單元46來偵測得知,在另一實施例中也可以直接計算門組件502的開啟時間來判斷位移值的變化量,本發明並不限制得知門組件502的位移值的方法。Therefore, the control module 2 (as shown in FIG. 2 ) controls the gas supply equipment (not shown in the figure) to provide a gas supply device corresponding to the displacement according to the displacement value of the
接著,請參考圖4。圖4是表示吹淨模組中的氣簾單元的結構示意圖。在圖4中,氣簾單元42由本體420、蓋體420a、透氣板422及進氣孔4202、4204所構成,其中本體420的外觀輪廓為長方形,且本體420與蓋體420a所圍成的內部空間內設置有具有多個氣孔4222的透氣板422,且透氣板422的形狀可以配合氣簾單元42的本體420來設置。透氣板422在氣簾單元42內形成封閉空間,此封閉空間可連通進氣孔4202、4204。透氣板422的氣孔4222的孔徑範圍可以是0.001微米 (µm)至10毫米(mm),較佳是0.001微米 (µm)至1微米 (µm)。在本實施例中氣孔4222的數量與分佈並不予以限制,例如可以是規則分佈或是不規則分佈。這些微小氣孔4222的存在可以使通過透氣板422的氣流形成均勻的氣流甚至是層流。在本發明的較佳實施例中,具有多個氣孔4222的透氣板422的材質可以是不鏽鋼、抗靜電耐腐蝕的纖維材或是複合材,例如但不限制是玻璃纖維、環氧樹脂玻璃纖維、鐵氟龍(PTFE)、陶瓷、樹脂、或是超高分子量聚乙烯(UPE,ultra-high molecular weight polyethylene),使得原本的流量由0-400LPM提高至0-800LPM,且耐氣體壓力程度也相對的提高,避免因大流量的氣體而導致透氣板爆裂。Next, please refer to Figure 4. Fig. 4 is a schematic view showing the structure of the air curtain unit in the blowing module. In Fig. 4, the
於本發明的另一較佳實施例中,設置在本體420內的透氣板422可以是一個也可以是兩個或是多個,可以依據使用者的需求來改變在本體420內的透氣板422的數量。舉例來說,在未繪示的一實施例中,兩個透氣板間隔設置並在氣簾單元42內形成兩個封閉空間。在未繪示的另一實施例中,兩個透氣板疊置並在氣簾單元42內形成一個封閉空間。另外,長方形的本體420的上方及/或較長側邊設有進氣孔4202、4204,於另一實施例中,進氣孔4202、4204設置的位置亦可以是長方形的本體420的較短側邊,其進氣孔4202、4204亦可以分別設置在較短側邊及較長側邊,且進氣孔4202、4204設置的數量沒有限制。此外,設置在本體420的進氣孔4202、4204還透過管體7與供氣設備(未在圖中表示)連接。要說明的是,供氣設備(未在圖中表示)是用以提供各種的潔淨氣體,例如純淨乾燥氣體(CDA,clean dry air)、超純淨乾燥氣體(X-CDA,Extreme clean dry air)或是惰性氣體經由管體7進入氣簾單元42。此外,在本發明的實施例中,當透氣板422的材質為不鏽鋼時,具有多個氣孔4222的透氣板422的製作方式可以是金屬燒結的方式所形成,也就是可以利用燒結金屬粉末以燒結形成不鏽鋼透氣板422。這些氣孔4222可以用雷射鑽孔或是機械鑽孔的方式形成。且這些氣孔4222可以是規則排列或是不規則排列,並不予限制。In another preferred embodiment of the present invention, there can be one or two or more air-
接著,舉一實施例來說明本發明的吹淨控制系統對晶圓承載裝置的一實施例的吹淨步驟。在說明吹淨控制系統對晶圓承載裝置的一實施例的吹淨步驟時,請同時一併參閱圖2-圖4。首先,感測單元偵測晶圓承載裝置的門組件的位移值。在此步驟中,當晶圓承載裝置500的門組件502由關閉到開啟,設置在門組件502周圍(例如上端5022及/或底部5024)或是在門框(未在圖中表示)上的感測單元44偵測到晶圓承載裝置500的門組件502的狀態改變,則門組件502的移動距離定義為第一位移值,此時,感測單元44將對應於偵測到晶圓承載裝置500的門組件502的第一位移值的第一訊號傳送至控制模組2,控制模組2會依據此第一訊號來控制供氣設備(未在圖中表示)提供具有相應於第一位移值的氣體流量的潔淨氣體進入吹淨模組4,且流量控制單元46將相應於門組件502的第一位移值、將對應的氣體流量的潔淨氣體送入氣簾單元42,再由氣簾單元42朝向晶圓承載裝置500設有門組件502的方向來吹出第一氣體流量的潔淨氣體,並對晶圓盒300進行第一充氣步驟。Next, an embodiment is given to illustrate the blowing steps of the blowing control system of the present invention for an embodiment of the wafer carrier device. Please refer to FIG. 2-FIG . Firstly, the sensing unit detects the displacement value of the gate assembly of the wafer carrier. In this step, when the
在本發明的較佳實施例中,當供氣設備(未在圖中表示)提供潔淨氣體(未在圖中表示)透過進氣口4202、4204進入氣簾單元42之後,會經由在氣簾單元42內的透氣板422的多個氣孔4222來使通過的流體均勻化甚至是過濾微小顆粒,以提高氣體由氣簾單元42吹出時的潔淨度以及均勻度,且具有第一氣體流量的潔淨氣體可以均勻的由本體420相反於蓋體420a的一側向外並朝向晶圓承載裝置500的門組件502的方向吹出。In a preferred embodiment of the present invention, when the air supply equipment (not shown in the figure) provides clean gas (not shown in the figure) to enter the
接著,當門組件502的移動距離為第二位移值時,感測單元44傳送對應於第二位移值的第二訊號至控制模組2,控制模組2依據此第二訊號調節流量控制單元46對氣簾單元42提供具有對應第二訊號的氣體流量的潔淨氣體,以供氣簾單元42朝晶圓承載裝置500的門組件502的方向吹出第二氣體流量的潔淨氣體。要說明的是,流量控制單元46提供的潔淨氣體的氣體流量雖然隨著門組件502的位移值而改變,但其潔淨氣體是持續地經由氣簾單元42朝向晶圓承載裝置500的門組件502的方向吹出,並對晶圓盒300進行第二充氣步驟。在本發明中,在門組件502的位移值無論是多少,由氣簾單元42吹出的潔淨氣體較佳是以層流狀態流動,且由氣簾單元42吹出的潔淨氣的流速範圍為0.1m/s-2m/s(公尺/秒)。Next, when the moving distance of the
由上述可以得知,當晶圓承載裝置500的門組件502的位移值與氣簾單元42所吹出的氣體流量(或是所形成的氣流牆AF)相關。在本發明中,可透過調控送入氣簾單元42的潔淨氣體的流速或/及壓力來控制由氣簾單元42吹出的潔淨氣體保持在層流狀態流動,以及依據門組件502的位移值來調節由氣簾單元42吹出的潔淨氣體的流量,可以避免在晶圓承載裝置500的門組件502附近產生擾流氣體,而將門組件502附近的髒污或是微粒帶入晶圓盒300中造成污染的問題。From the above, it can be known that the displacement of the
此外,由於氣簾單元42內的透氣板422的材質為不鏽鋼、抗靜電耐腐蝕的纖維材或是複合材、陶瓷、樹脂、或是超高分子量聚乙烯,利用透氣板422的材質的特性來可將氣體流量提高至0-800LPM(公升/分鐘),也就是說由供氣設備提供至吹淨控制系統的氣體流量範圍可以控制在0-800LPM之間,其耐受氣體壓力程度更高,整個氣簾單元42的使用壽命更長。In addition, because the material of the air-
1:吹淨控制系統
2:控制模組
4:吹淨模組
42:氣簾單元
420:本體
420a:蓋體
4202、4204:進氣孔
422:透氣板
4222:氣孔
44:感測單元
46:流量控制單元
300:晶圓盒
302:門體
500:晶圓承載裝置
502:門組件
5022:門組件的上端
5024:門組件的底部
510:承載盤
AF:氣流牆
1: Blowing control system
2: Control module
4: Blowing off the module
42: Air curtain unit
420:
圖1是根據本發明所揭露的技術,表示吹淨控制系統的方塊示意圖。 圖2是根據本發明所揭露的技術,表示吹淨控制系統中各單元的方塊示意圖。 圖3是根據本發明所揭露的技術,表示具有控制吹淨系統的晶圓承載裝置的側視圖。 圖4是根據本發明所揭露的技術,表示吹淨模組中的氣簾單元的結構示意圖。 FIG. 1 is a schematic block diagram showing a blowdown control system according to the technology disclosed in the present invention. FIG. 2 is a schematic block diagram showing each unit in the purge control system according to the technology disclosed in the present invention. 3 is a side view of a wafer carrier with a controlled blowdown system according to the techniques disclosed herein. FIG. 4 is a schematic diagram showing the structure of the air curtain unit in the blowing module according to the technology disclosed in the present invention.
1:吹淨控制系統 1: Blowing control system
2:控制模組 2: Control module
4:吹淨模組 4: Blowing off the module
42:氣簾單元 42: Air curtain unit
44:感測單元 44: Sensing unit
46:流量控制單元 46: Flow control unit
300:晶圓盒 300: wafer box
302:門體 302: door body
500:晶圓承載裝置 500: Wafer Carrier
Claims (10)
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US17/885,346 US20230054047A1 (en) | 2021-08-23 | 2022-08-10 | Purge controlling system |
JP2022130588A JP7462977B2 (en) | 2021-08-23 | 2022-08-18 | Purge Control System |
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Application Number | Priority Date | Filing Date | Title |
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TW110131008 | 2021-08-23 | ||
TW110131008 | 2021-08-23 |
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TW202308761A true TW202308761A (en) | 2023-03-01 |
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TWI716878B (en) * | 2019-05-21 | 2021-01-21 | 華景電通股份有限公司 | Air curtain control system |
CN213936152U (en) * | 2021-07-08 | 2021-08-10 | 西安奕斯伟硅片技术有限公司 | Load port and front end module capable of keeping cleanliness of wafers in load box |
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