CN101026085A - Semiconductor device manufacturing equipment with vacuum system - Google Patents
Semiconductor device manufacturing equipment with vacuum system Download PDFInfo
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- CN101026085A CN101026085A CNA2007100065951A CN200710006595A CN101026085A CN 101026085 A CN101026085 A CN 101026085A CN A2007100065951 A CNA2007100065951 A CN A2007100065951A CN 200710006595 A CN200710006595 A CN 200710006595A CN 101026085 A CN101026085 A CN 101026085A
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- gas exhaust
- exhaust piping
- switching member
- pipeline section
- described gas
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K1/00—Lift valves or globe valves, i.e. cut-off apparatus with closure members having at least a component of their opening and closing motion perpendicular to the closing faces
- F16K1/16—Lift valves or globe valves, i.e. cut-off apparatus with closure members having at least a component of their opening and closing motion perpendicular to the closing faces with pivoted closure-members
- F16K1/18—Lift valves or globe valves, i.e. cut-off apparatus with closure members having at least a component of their opening and closing motion perpendicular to the closing faces with pivoted closure-members with pivoted discs or flaps
- F16K1/22—Lift valves or globe valves, i.e. cut-off apparatus with closure members having at least a component of their opening and closing motion perpendicular to the closing faces with pivoted closure-members with pivoted discs or flaps with axis of rotation crossing the valve member, e.g. butterfly valves
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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- Drying Of Semiconductors (AREA)
Abstract
Semiconductor device manufacturing equipment has a vacuum system that enhances the fluency of the gas being discharged from a chamber of the equipment. The vacuum system has a vent line, and a throttle valve that includes a vent line opening and closing member oriented so that it is readily opened by a concentrated flow of gas in the vent line. The vacuum system may include a heating unit that heats the vent line through which the gas passes. Still further, a bend in the vent line upstream of the vent line opening and closing member may have a gently curved shape and/or may subtend an angle of less than 90 DEG . As a result, the efficiency of the ventilation of the process chamber is improved, making it easier to control the pressure of the process chamber and minimizing the contamination of the throttle valve and the vent line.
Description
Technical field
The application relates to a kind of equipment for making semiconductor device or analog.More particularly, the present invention relates to a kind of vacuum system of equipment for making semiconductor device, this vacuum system comprises gas exhaust piping (vent line) and is used to control the choke valve unit of the opening and closing of vacuum line.
Background technology
Usually, by to the semiconductor substrate,, repeatedly and optionally carry out many different cell process and make semiconductor device such as wafer.These technologies comprise: ion implantation technology is injected into the foreign ion of 3B family (for example B) or 5B family (for example P or As) at semiconductor-based the end; Thin film deposition processes forms thin material layer on the semiconductor-based end; Etching technics is with thin material layer patternization; On the thin material layer of patterning, form the technology of intermediate insulating layer; Follow-up chemico-mechanical polishing (CMP) technology is polished the surface of semiconductor substrate, to remove because the step (step) that the formation intermediate layer produces above the thin layer of patterning; Cleaning.The equipment for making semiconductor device that is used to carry out these technologies generally includes process chamber, produces vacuum environment in this process chamber.In addition, process chamber seals with being sealed.Therefore, there is any potential pollutant hardly indoor, such as particle.Yet, spend a large amount of time inner treatment chamber is vacuumized, so that indoor pressure is reduced to vacuum pressure from atmospheric pressure.
Traditional equipment for making semiconductor device also comprises forevacuum (load-lock) chamber, transfer chamber and is positioned at the robot of transfer chamber.The wafer cassette that supports a plurality of wafers is supported in the prechamber.The vacuum pressure that prechamber keeps is close with the vacuum pressure in the process chamber.Robot shifts out the chuck of wafer from prechamber, and with wafer handling in process chamber.In order to make the maximizing efficiency of manufacturing process, this equipment for making semiconductor device has a plurality of process chambers and a plurality of prechamber that is arranged to ring-type around transfer chamber.Equipment for making semiconductor device with this layout is known as beaming type (cluster type) equipment for making semiconductor device.
In addition, the growth of the fast development of information and communication technology (ICT) and information processor (such as computer) universal caused the demand to the big semiconductor device of high-speed cruising and memory span.In addition, in order to increase the integrated level of semiconductor device, the memory cell of semiconductor device becomes more and more littler.Yet, must carry out the technology of making semiconductor device with the highest accuracy, to guarantee to make the required very little process allowance of highly integrated now semiconductor device.
For this reason, plasma provides and has carried out required accuracy such as being used in the thin film deposition processes made in the semiconductor device with little design rule (design rule), etching technics.Yet, the pressure that in having the equipment for making semiconductor device of a plurality of chambers, uses plasma in process chamber, prechamber and the transfer chamber of processing unit, to be consistent.
In addition; in the equipment for making semiconductor device that comprises the beaming type equipment for making semiconductor device; the particle of particle in the atmosphere or the polymer that produces in some technologies may have a negative impact to the reliability of final semiconductor device, and the qualification rate to whole manufacturing process has a negative impact thus.Therefore, the inside of process chamber is vacuumized, to keep the vacuum pressure in the process chamber and to make indoor maintenance cleannes to a certain degree.
Be generally used for the system that process chamber vacuumizes is comprised extract system (such as turbine pump and dry pump) and gas exhaust piping, wherein, the gas in the process chamber discharged by gas exhaust piping with turbine pump.Vacuum system also comprises the choke valve in the gas exhaust piping, is used for the indoor pressure of control and treatment.When processing gas was introduced into process chamber, the pressure in the process chamber raise.At this moment, when utilizing processing gas that substrate is handled, the vacuum system continuous firing is to keep the pressure in the process chamber.Simultaneously, the byproduct of unreacted gas and the reaction that produces in technical process is also discharged from process chamber by vacuum system in the process chamber.Operate vacuum system with various patterns.For example, the operation turbine pump is to produce about 1 * 10 in process chamber
-6The high vacuum of holder.When for this high vacuum of generation in typical plasma processing chamber, the blade of turbine pump is usually with 27, and the speed of 000rpm or higher speed are rotated.
Subsequently, provide purge gas such as nitrogen (N
2) or argon (Ar) to cause plasma reaction.At this moment, in process chamber, keep about 1 * 10
-3Holder is to about 1 * 10
-1The low vacuum pressure of holder.In this case, throttle valve control is opened the degree of gas exhaust piping, so that the pressure in the process chamber remains on the level of expectation.
Fig. 1 shows traditional vacuum plant with gas exhaust piping, wherein, such choke valve is installed in gas exhaust piping.
As shown in fig. 1, in the gas exhaust piping 14 of choke valve 16 between process chamber 10 and turbine pump 12.Choke valve 16 comprises gas exhaust piping switching member 18, and the form of this member 18 is to have around central horizontal axis 20 to be inclined upwardly respectively and the plectane of downward-sloping two semicircle 18a, 18b.Control the degree that gas exhaust piping 14 is opened by inclination gas exhaust piping switching member 18.More particularly, when gas exhaust piping switching member 18 was horizontally disposed with, gas exhaust piping 14 was fully closed.On the other hand, when gas exhaust piping switching member 18 during with respect to the horizontal tilt predetermined angular, gas exhaust piping 14 amount corresponding that be opened with this angle.The gas of extracting out from process chamber 10 22 flows towards turbine pump 12, and its speed that flows is corresponding to the amount of opening gas exhaust piping 14 by gas exhaust piping switching member 18.What note is, in whole specification, term " gas " or " gas " can be represented the atmosphere in the process chamber interchangeably, and no matter what the actual content in the atmosphere is.
In operation, when the pressure in the process chamber 10 is higher than in process chamber when carrying out the required pressure of technology, bleed from process chamber 10 by turbine pump 12.The gas of extracting out from process chamber 10 22 discharges by gas exhaust piping 14.Control the speed that gas 22 flows through gas exhaust piping 14 by gas exhaust piping switching member 18, carry out the required level of technology in the process chamber 10 so that the pressure in the process chamber 10 remains on.
Yet traditional vacuum plant is indignant about unfairness steady from handling 10 dischargings.
The first, the rotating shaft 20 of gas exhaust piping switching member 18 is parallel to the horizontal pipeline section (run) of gas exhaust piping 14.Therefore, each half 18a, 18b of gas exhaust piping switching member strides across the vertical pipeline section of gas exhaust piping 14, promptly is cross over vertical pipeline section one side that extend at the exterior angle from bend A of gas exhaust piping from vertical pipeline section one side of extending from the interior angle of bend A of gas exhaust piping.Therefore, the gas of same amount arrives each half 18a, 18b of gas exhaust piping switching member 18.Thus, identical or close fluid pressure is applied on each half 18a, 18b of gas exhaust piping switching member.As a result, the gas exhaust piping switching member is not about its rotating shaft 20 quick slants.Therefore, gas is not discharged reposefully by gas exhaust piping switching member 18.
In addition, the gas of extracting out from process chamber 10 contains powder, for example polymeric material.Powder accumulates on the surface of gas exhaust piping switching member 18 of choke valve 16.At last, powder gather overslaugh gas exhaust piping switching member 18 operate reposefully.More particularly, these powder produce friction with the device that makes gas exhaust piping switching member 18 around central shaft 20 rotations.As a result, gas exhaust piping 14 is not opened to the suitable required degree of pressure of generation in process chamber 10.In addition, the surface that is attached with powder of gas exhaust piping switching member 18 becomes coarse.The gas that passes the rough surface of gas exhaust piping switching member 18 becomes turbulent flow.As a result, gas flows out from process chamber 10 reposefully, thereby becoming is difficult to pressure in the control and treatment chamber 10 accurately.
The second, in processing procedure, the temperature in the process chamber 10 is very high usually.Therefore, gas molecule has the flowability of height in process chamber 10.On the other hand, the temperature of the gas exhaust piping 14 that is connected with process chamber 10 is relatively low.Therefore, along with gas molecule flows into gas exhaust piping 14 from process chamber 10, the mobile of gas molecule reduces fast, and promptly gas flow slows down.As a result, air-flow becomes turbulent flow, and this makes the pressure in the process chamber be difficult to controlled.
The 3rd, choke valve 16 is positioned at following (downstream) of the bend A of gas exhaust piping 14, and wherein, described bend A is connected the horizontal pipeline section of gas exhaust piping with the vertical pipeline section of gas exhaust piping.Bend A forms the right angle.The gas of extracting out from process chamber 10 22 flows through the horizontal pipeline section of gas exhaust piping at a predetermined velocity, bumps at bend A and gas exhaust piping 14 then.Therefore, the mobile quilt of gas 22 temporarily interrupts.Subsequently, gas 22 flows through the vertical pipeline section of the gas exhaust piping 14 that gas exhaust piping switching member 18 wherein is installed.That is, the right angle bends A that the speed of air-flow and direction are deflated suddenly in the pipeline 14 changes, thereby causes so-called oscillatory occurences (hunting phenomenon) in gas exhaust piping 14 inside.As a result, gas 22 becomes irregular from process chamber 10 and the mobile of gas 22 by gas exhaust piping 14 thus.In this case, gas exhaust piping switching member 18 fluctuation of services of choke valve 16.As a result, be difficult to the accurately indoor pressure of control and treatment.In addition, more powder might invest the gas exhaust piping switching member.
As mentioned above, in traditional equipment for making semiconductor device, when gas flows through gas exhaust piping brokenly, can not accurately regulate the pressure in the process chamber.As a result, deposition rate, etch rate or clean rate are inconsistent.In process to processing of wafers, this inconsistent poor reliability that causes semiconductor device.That is,, and cause the productivity ratio of manufacturing process to be subjected to negative effect because manufacturing equipment can not pass through gas exhaust piping exhaust reposefully.In addition, when handling gas when process chamber does not discharge reposefully by gas exhaust piping, particle precipitates in gas exhaust piping.Therefore, gas exhaust piping cleaning must be PM (preventive maintenance) part, removing these particles, thereby increase the time quantum of equipment downtime.In addition, particle can be from the gas exhaust piping adverse current to process chamber.This can cause the defective of semiconductor device, and causes the maintenance and repair cost to increase.
Summary of the invention
Therefore, the object of the present invention is to provide the vacuum system of a kind of equipment for making semiconductor device or analog, this vacuum system helps flowing by the smoothness of the gas of the gas exhaust piping of this system.
Another object of the present invention is to provide the vacuum system of a kind of equipment for making semiconductor device or analog, can accurately regulate the degree that the gas exhaust piping of this vacuum system is opened by this vacuum system.
Another object of the present invention is to provide the vacuum system of a kind of equipment for making semiconductor device or analog, can accurately control the room pressure of this manufacturing equipment by this vacuum system.
Another object of the present invention is to provide the vacuum system of a kind of equipment for making semiconductor device or analog, this vacuum system prevents that solids precipitation is in the gas exhaust piping of this vacuum system.
Another object of the present invention is to provide the vacuum system of equipment for making semiconductor device or analog, this vacuum system does not shorten the PM cycle of this manufacturing equipment.
According to an aspect of the present invention, a kind of substrate processing apparatus with vacuum chamber and vacuum system is provided, this vacuum system is from the vacuum chamber emission gases, wherein, this vacuum system comprises vacuum pump and has the gas exhaust piping and the choke valve unit of bend, this choke valve unit comprises the gas exhaust piping switching member, this gas exhaust piping switching member is arranged in gas exhaust piping, downstream at bend, and, easily open the gas exhaust piping switching member by the air-flow of concentrating in the gas exhaust piping with gas exhaust piping switching member orientation.
Basically, the bend in the gas exhaust piping makes by described vacuum pump from the gas of described vacuum chamber discharging with such flow rate: the speed that gas stream is crossed the part of the cross section that the given position in described bend downstream of described gas exhaust piping intercepts flows through the speed of the remainder of described cross section greater than it.The gas exhaust piping switching member is the form of plate, and the shape of described plate is corresponding with the described cross section shape of described gas exhaust piping.The mode that described gas exhaust piping switching member is installed to described gas exhaust piping is that described gas exhaust piping switching member is rotatable around the rotating shaft that extends across described gas exhaust piping.Therefore, described gas exhaust piping switching member has the first and the second portion of the relative both sides that lay respectively at described rotating shaft.When described gas exhaust piping switching member is in the close position, the described second portion of described gas exhaust piping switching member occupies the part of the described cross section of described gas exhaust piping, and in this part, gas will be with high relatively flow rate, that is the concentrated place of gas.On the other hand, the described first of described gas exhaust piping switching member occupies the remainder of the described cross section of described gas exhaust piping, and at this remainder, few relatively gas flow is passed through.
According to a further aspect in the invention, provide a kind of substrate processing apparatus with vacuum chamber and vacuum system, this vacuum system is from the vacuum chamber emission gases, and wherein, vacuum system comprises: vacuum pump; Gas exhaust piping is connected to vacuum chamber with vacuum pump; The choke valve unit, the degree that the control gas exhaust piping is opened; Heating unit comprises with gas exhaust piping and operationally unites the heater that flows through the gas of gas exhaust piping with heating.
According to another aspect of the invention, provide a kind of substrate processing apparatus with vacuum chamber and vacuum system, this vacuum system is from the vacuum chamber emission gases, and wherein, vacuum system comprises: vacuum pump; Gas exhaust piping has first pipeline section and second pipeline section and curve and/or the acutangulate bend that extend from vacuum chamber, and this bend extends between first pipeline section and second pipeline section and first pipeline section and second pipeline section are interconnected; The choke valve unit comprises the gas exhaust piping switching member, and this gas exhaust piping switching member is arranged in second pipeline section of gas exhaust piping to control the degree that gas exhaust piping is opened.
Description of drawings
By the explanation that the preferred embodiment of the present invention is carried out in detail with reference to the accompanying drawings, for the person of ordinary skill of the art, above and other purpose of the present invention, characteristics and advantage will become clearer, in the accompanying drawings:
Fig. 1 is the schematic diagram of traditional equipment for making semiconductor device;
Fig. 2 is the vertical view that has the beaming type equipment for making semiconductor device of choke valve unit according to of the present invention;
Fig. 3 is the cutaway view of semiconductor device according to the invention manufacturing equipment;
Fig. 4 is the schematic diagram that has the equipment for making semiconductor device of choke valve unit according to of the present invention;
Fig. 5 is the end view according to choke valve of the present invention unit;
Fig. 6 is the schematic diagram according to second embodiment of the equipment for making semiconductor device with choke valve unit of the present invention;
Fig. 7 is the schematic diagram according to the 3rd embodiment of the equipment for making semiconductor device with choke valve unit of the present invention.
Embodiment
The present invention can be applicable to handle various types of equipment of substrate, and described equipment comprises chamber and the vacuum plant of being bled in the chamber.Specifically, by combining with the processing unit of this equipment, the present invention is useful.Yet, can apply the present invention to wherein any vacuum chamber of the controlled substrate processing apparatus of pressure needs, such as prechamber or transfer chamber.
Yet, just for illustrative purposes, will the present invention be described in conjunction with the beaming type equipment for making semiconductor device.Beaming type equipment for making semiconductor device 100 has a plurality of processing unit 102, aligning apparatus 104, transfer chamber 108 and a plurality of forevacuum unit 116.Cell process (such as thin-film technique and etching technics) is carried out by processing unit 102.Aligning apparatus 104 is with the wafer W orientation, to make the flat region (flat zone) of wafer W towards given direction before experiencing cell process in wafer W in processing unit 102.That is, aligning apparatus 104 is alignd wafer W with processing unit 102.Robot 106 is arranged in transfer chamber 108, is used for the wafer W from aligning apparatus 104 is sent to processing unit 102.Forevacuum unit 116 communicates with transfer chamber 108.Each forevacuum unit 116 comprises the gap valve 110 and the inlet 114 that deviates from transfer chamber 108 towards transfer chamber 108.Inlet 114 makes the wafer cassette 112 that supports a plurality of wafer W can move on in the vacuum chamber of forevacuum unit, perhaps is moved out of from vacuum chamber.Opening clearance valve 110 makes robot 106 can enter the vacuum chamber of forevacuum unit, and wafer W is sent to wafer cassette 112 or sends out wafer W from wafer cassette 112.
In the equipment for making semiconductor device in Fig. 2, each processing unit 102 comprises process chamber, and process chamber defines the airtight seal cavity of handling wafer W therein.For example, processing unit 102 can be physical vapor deposition device or chemical vapor deposition unit, is used for carrying out film forming depositing operation on wafer W.Processing unit 102 can also be an etching device, is used to carry out the etching technics of the layer patternization that makes on the wafer W, and wherein, the layer on the described wafer W is masked, such as the mask exposure of photoresist.Processing unit 102 can also be carried out cineration technics, with oxidation and remove photoresist.
When carrying out technology, during such as thin film deposition processes, etching technics and cineration technics, if carry out technology satisfactorily and the inflow of pollutant (such as particle) is minimized, then the pressure in the process chamber of processing unit 102 must remain on predetermined level.For this reason, come the process chamber of processing unit 102 is bled by vacuum system with vacuum plant (such as turbine pump).
With reference to the DPS plasma etching apparatus shown in Fig. 3 vacuum system is described in more detail.The DPS plasma etching apparatus is used as the example that can use processing unit 102 of the present invention.DPS plasma etching apparatus 102 utilizes plasma to come layer on the etched wafer, to form conductive pattern.
The electrostatic chuck 138 that is applied in the bottom electrode 136 of RF power and supports just processed (etching) is arranged in the lower part of process chamber 102.The frequency that is applied to the RF power of bottom electrode 136 is about 2MHz, and makes plasma ion quicken towards the wafer that is supported on the electrostatic chuck 138.Clamp ring (clamp ring) 140 forms the periphery of electrostatic chuck 138.Clamp ring 140 is around the wafer that is supported by electrostatic chuck 138, and the size of clamp ring 140 guarantees that wafer remains on the position of expectation of electrostatic chuck 138.In addition, clamp ring 140 guarantees that plasma can clash into the periphery of wafer, makes that the whole surface of wafer can be by plasma etching.
DPS plasma etching apparatus 120 also comprises lift mechanism 144 that contains lifting push rod (lift pin) 142 and the driver element that is used to lifting push rod 142 is moved up and down.Lifting push rod 142 can reach electrostatic chuck 138 upper surface the top and be reduced to the below of this upper surface, be used for wafer is lifted away from and wafer is dropped to electrostatic chuck 138 from electrostatic chuck 138.
On the other hand, when processing gas was introduced in the process chamber 102, the pressure in the process chamber of etching device 102 rose at once.In the process of etching technics, turbine pump 148 continued operations are operation pressure to keep this pressure.Specifically, emit from process chamber by the byproduct and the unreacted gas of turbine pump 148 etching technics.
Now will describe the semiconductor device according to the invention manufacturing equipment in detail with reference to Fig. 4 to Fig. 7 in detail, this equipment for making semiconductor device has each a plurality of vacuum system that all comprise choke valve unit 152.
As shown in Figure 4, choke valve of the present invention unit is characterised in that and can locatees fast with the gas exhaust piping switching member 156 that flow of accurate adjusting by the gas of gas exhaust piping 146.Usually, the gas of extracting out from process chamber 102 by turbine pump 148 158 flows through gas exhaust piping 146 at a predetermined velocity.When gas 158 during by the bend B in the gas exhaust piping 146, gas 158 concentrates on the zone C place (right-hand side of gas exhaust piping 146 as shown in Figure 4) of the vertical pipeline section of gas exhaust piping owing to inertia.Zone C is positioned at the downward side of extending in the exterior angle from bend B of the vertical pipeline section of gas exhaust piping.On the other hand, other zone of the vertical pipeline section of gas exhaust piping 146 (side that the interior angle from bend B of the vertical pipeline section of gas exhaust piping 146 extends), there is any gas hardly downwards.
Come designing and arranging air pipe switching member 156 with such thinking.Specifically, gas exhaust piping switching member 156 is arranged in (vertically) pipeline section from the direct downward extension of bend B of gas exhaust piping.Gas exhaust piping switching member 156 comprises: plate, and the shape of plate is corresponding with the shape in the cross section of the vertical pipeline section of gas exhaust piping 146; Rotating shaft 154, plate center on rotating shaft 154 tiltables in gas exhaust piping 146.Therefore, gas exhaust piping switching member 156 is divided into 156a of first and the second portion 156b in the relative both sides of rotating shaft 154.The 156a of first be arranged in gas exhaust piping vertical pipeline section when turbine pump 148 when process chamber is bled almost without any the moving zone of air-flow.On the other hand, the second portion 156b of gas exhaust piping switching member 156 is arranged in the zone C of the vertical pipeline section of gas exhaust piping.For this reason, the rotating shaft 154 of gas exhaust piping switching member 156 is crooked with respect to the horizontal pipeline section of gas exhaust piping 146.
That is, as shown in Figure 4, the prior art among the orientation of the rotating shaft 154 of gas exhaust piping switching member 156 and Fig. 1 different.With reference to Fig. 5, extract and pass through the bend B of gas exhaust piping out from process chamber 102 along the mobile gas 158 of the horizontal pipeline section of gas exhaust piping 146.At this moment, gas 158 concentrates on the distally (far side) of the vertical pipeline section of gas exhaust piping 146 owing to inertia.The second portion 156b of gas exhaust piping switching member 156 is subjected to the pressure of gas 158 in distally of the vertical pipeline section of gas exhaust piping 146.As a result, gas exhaust piping switching member 156 is around rotating shaft 154 rotations, and the mode of its rotation is that the 156a of first of gas exhaust piping switching member 156 rises.When the amount of the gas 158 by gas exhaust piping 146 turn 90 degrees even as big as gas exhaust piping switching member 156 is revolved, choke valve unit 152 was opened fully.That is, according to the amount of extracting and flow through the gas of gas exhaust piping 146 from process chamber out, 0 degree that is rotated in of gas exhaust piping switching member 156 changes to the scope of 90 degree.Gas 158 flows to turbine pump by the gas exhaust piping of opening 146, is discharged into the outside of equipment then.
Preferably, compare with the prior art among Fig. 1, the azimuth deviation of the rotating shaft 154 of gas exhaust piping switching member 156 angles of 90 degree, make rotating shaft 154 extend along the direction vertical with the direction of the horizontal pipeline section of gas exhaust piping 146.Yet, the invention is not restricted to this.This just can form the model of the optimum condition that process chamber is bled.On the contrary, according to the present invention, the rotating shaft of gas exhaust piping switching member 156 basis is by the next orientation that flows of the gas of the gas exhaust piping of equipment for making semiconductor device.More particularly, the mode of rotating shaft 154 orientations of gas exhaust piping switching member 156 is, the part 156a of gas exhaust piping switching member 156,156 lays respectively at the counterpart of the cross section of gas exhaust piping 146, but wherein, when the pump unit that is connected to gas exhaust piping 146 is being operated, the flow velocity that flows through one gas in these two parts is higher than another the flow velocity of gas that flows through in these two parts, thereby the concentration that flows through one gas in these two parts is higher than another the concentration of gas that flows through in these two parts.
As mentioned above, come directed choke valve, also easily to open choke valve rapidly according to the characteristic that flows of the gas in the gas exhaust piping.As a result, can be accurately and the pressure of control and treatment chamber more promptly, thus guarantee in process chamber successfully performance element technology.In addition, strengthened the fluency that flows of gas in the gas exhaust piping, so that to the minimum contamination of choke valve and gas exhaust piping.
With reference to Fig. 6, another vacuum system of equipment for making semiconductor device comprises gas exhaust piping heating unit 160, and this gas exhaust piping heating unit 160 comprises the heater that is used for thermal exhaust pipeline 146.The heater of gas exhaust piping heating unit 160 can comprise the resistance heater of the coil form that twines gas exhaust piping 146.Preferably, gas exhaust piping heating unit 160 is heated to 70 ℃ or higher with gas exhaust piping 146, more preferably, gas exhaust piping 146 is heated in 70 ℃-150 ℃ the temperature range.In addition, can in air communication, pass through gas exhaust piping heating unit 160 thermal exhaust pipelines 146, also can be before air communication thermal exhaust pipeline 146.
Typically, when wafer just when processed, the temperature of the process chamber of processing unit 102 is very high.Therefore, gas molecule has the flowability of height in process chamber.On the other hand, it is relatively low usually to be connected to the temperature of gas exhaust piping 146 of process chamber.Heating unit 160 thermal exhaust pipelines 146 are to prevent there is tangible temperature difference between inner treatment chamber and gas exhaust piping inside.Therefore, heating unit 160 prevents to descend fast when gas molecule the mobile of gas molecule when process chamber flow to gas exhaust piping 146.As a result, particle will can not descend owing to the speed of gas molecule and be deposited in the gas exhaust piping from gas.In addition, because its speed does not reduce when gas molecule enters gas exhaust piping 146, thus the pressure in the control and treatment chamber accurately, thus gas discharges reposefully from process chamber.
In addition, as seeing in Fig. 6, the gas exhaust piping switching member 156 of choke valve can come orientation in conjunction with Fig. 4 and Fig. 5 institute as above with describing, thereby has further strengthened the moving fluency of air-flow in the gas exhaust piping 146.
Fig. 7 shows another vacuum system of semiconductor device according to the invention manufacturing equipment.As shown in Figure 7, the bend D of the gas exhaust piping 146 that level (first) pipeline section of gas exhaust piping 146 is connected with vertical (second) pipeline section of gas exhaust piping 146 is curves.In addition, perhaps alternatively, the bend D of gas exhaust piping 146 can form the angle less than 90 degree.Therefore, the gas of the horizontal pipeline section by gas exhaust piping flows into the vertical pipeline section of gas exhaust piping glibly along bend D.As a result, oscillation phenomenon is minimized, thus, the pressure in the control and treatment chamber accurately.In addition, because the speed of air-flow is maintained, so particle will can not be deposited in the inside in the gas exhaust piping and the gas exhaust piping switching member 156 of choke valve.
In addition, as seeing in Fig. 7, the gas exhaust piping switching member 156 of choke valve can come orientation in conjunction with Fig. 4 and Fig. 5 institute as above with describing, thereby further strengthens the moving fluency of air-flow in the gas exhaust piping 146.Similarly, illustrate with the gas exhaust piping heating unit of describing 160 and can use, make the efficient that process chamber is vacuumized further be enhanced in conjunction with the gas exhaust piping 146 of the bend D with the curve that is connected horizontal pipeline section and vertical pipeline section with reference to Fig. 6.
According to aforesaid the present invention, the gas exhaust piping switching member of choke valve unit is positioned, and makes the gas exhaust piping switching member open by the air-flow of concentrating easily.In addition, according to aforesaid the present invention, heating unit heats the gas exhaust piping that gas passes through.In addition, connecting the horizontal pipeline section of gas exhaust piping and the bend of vertical pipeline section in gas exhaust piping has crooked gradually shape and/or is bundled into the angle of spending less than 90.As a result, improved the efficient of the exhaust of process chamber, this makes that the pressure of process chamber is controlled easily.As a result, the present invention helps to improve the reliability of the semiconductor device that utilizes the substrate processing apparatus manufacturing, and has increased the productive rate of this equipment.In addition, the smoothness of gas flow prevent powder precipitation and invest the upper surface of gas exhaust piping switching member of choke valve and the inner surface of gas exhaust piping on.Therefore, the present invention has prolonged the useful life of substrate processing apparatus and the PM cycle is minimized.
At last,, should be appreciated that scope of the present invention is not limited thereto though described the present invention in conjunction with the preferred embodiments of the present invention.On the contrary, for the person of ordinary skill of the art, various changes and the variation carried out for these preferred embodiments will be tangible.Therefore, variation and the modification to these preferred embodiments can fall in the true spirit of the present invention and scope of claim qualification.
Claims (20)
1, substrate processing apparatus comprises:
Vacuum chamber;
Vacuum system, from described vacuum chamber emission gases, described vacuum system comprises the pump unit, described pump unit comprises vacuum pump;
Gas exhaust piping, in the outside extension of described vacuum chamber, and described vacuum pump is connected to described vacuum chamber, described gas exhaust piping has bend, make the gas that gives off from described vacuum chamber by described vacuum pump with such flow rate, the speed in the part of the cross section of the given position intercepting in described bend downstream that gas stream is crossed described gas exhaust piping flows through the speed of the remainder of described cross section greater than it;
The choke valve unit, comprise the gas exhaust piping switching member, described gas exhaust piping switching member is the form of plate, the shape of described plate is corresponding with the described cross section shape of described gas exhaust piping and be positioned at the described given position of described gas exhaust piping, the mode that described gas exhaust piping switching member is installed to described gas exhaust piping is, it is rotatable across the rotating shaft that described gas exhaust piping extends that described gas exhaust piping switching member is centered around described given position, thus, described gas exhaust piping switching member has the first and the second portion of the relative both sides that lay respectively at described rotating shaft, wherein, when described gas exhaust piping switching member is in the close position, the described second portion of described gas exhaust piping switching member occupies the described part of the described cross section of described gas exhaust piping, and the described first of described gas exhaust piping switching member occupies the described remainder of the described cross section of described gas exhaust piping.
2, substrate processing apparatus according to claim 1, wherein, described gas exhaust piping has first pipeline section and second pipeline section, described first pipeline section extends from described vacuum chamber, described bend extends between described first pipeline section and described second pipeline section and described first pipeline section and described second pipeline section is interconnected, wherein, the described rotating shaft of described gas exhaust piping switching member is crooked with respect to the longitudinal axis of described first pipeline section of described gas exhaust piping.
3, substrate processing apparatus according to claim 2, wherein, described first pipeline section flatly extends from described vacuum chamber, and described second pipeline section extends vertically from described bend.
4, substrate processing apparatus according to claim 3, wherein, the described rotating shaft of described gas exhaust piping switching member is along flatly extending with respect to the direction of crooked 90 degree of the longitudinal axis of first pipeline section of described gas exhaust piping.
5, substrate processing apparatus comprises:
Vacuum chamber;
Vacuum system, from described vacuum chamber emission gases, described vacuum system comprises:
The pump unit comprises vacuum pump;
Gas exhaust piping is connected to described vacuum chamber in the outside extension of described vacuum chamber and with described vacuum pump;
The choke valve unit comprises being arranged in described gas exhaust piping and being supported for movable gas exhaust piping switching member, wherein, and the degree that the described gas exhaust piping of the motion control of described gas exhaust piping switching member is opened;
Heating unit comprises heater, and described heater and described gas exhaust piping are operationally united the gas that flows through described gas exhaust piping with heating.
6, substrate processing apparatus according to claim 5, wherein, described heater comprises the stratie of the coil form that twines described gas exhaust piping.
7, substrate processing apparatus according to claim 6, wherein, described heater is heated to described gas exhaust piping the temperature of 70 degree to 150 degree effectively.
8, substrate processing apparatus according to claim 5, wherein, described gas exhaust piping has bend, make the gas that gives off from described vacuum chamber by described vacuum pump with such flow rate: the flow velocity of the part of the cross section that the given position along described bend downstream of gas by described gas exhaust piping intercepts is greater than the flow velocity of the remainder by described cross section
Described gas exhaust piping switching member is the form of plate, the shape of described plate is corresponding with the described cross section shape of described gas exhaust piping and be positioned at the described given position of described gas exhaust piping, the mode that described gas exhaust piping switching member is installed to described gas exhaust piping is, it is rotatable across the rotating shaft that described gas exhaust piping extends that described gas exhaust piping switching member is centered around described given position, thus, described gas exhaust piping switching member has the first and the second portion of the relative both sides that lay respectively at described rotating shaft, wherein, when described gas exhaust piping switching member is in the close position, the described second portion of described gas exhaust piping switching member occupies the described part of the described cross section of described gas exhaust piping, and the described first of described gas exhaust piping switching member occupies the described remainder of the described cross section of described gas exhaust piping.
9, substrate processing apparatus according to claim 8, wherein, described gas exhaust piping has first pipeline section and second pipeline section, described first pipeline section extends from described vacuum chamber, described bend extends between described first pipeline section and described second pipeline section and described first pipeline section and described second pipeline section is interconnected, wherein, the rotating shaft of described gas exhaust piping switching member is crooked with respect to the longitudinal axis of described first pipeline section of described gas exhaust piping.
10, substrate processing apparatus according to claim 9, wherein, described first pipeline section flatly extends from described vacuum chamber, and described second pipeline section extends vertically from described bend.
11, substrate processing apparatus according to claim 10, wherein, the rotating shaft of described gas exhaust piping switching member is along the direction horizontal-extending with respect to crooked 90 degree of the longitudinal axis of first pipeline section of described gas exhaust piping.
12, substrate processing apparatus comprises:
Vacuum chamber;
Vacuum system, from described vacuum chamber emission gases, described vacuum system comprises the pump unit, described pump unit comprises vacuum pump;
Gas exhaust piping, in the outside extension of described vacuum chamber, and described vacuum pump is connected to described vacuum chamber, described gas exhaust piping has first pipeline section and second pipeline section and bend, described first pipeline section extends from described vacuum chamber, described bend extends between described first pipeline section and described second pipeline section and described first pipeline section and described second pipeline section is interconnected, described bend be curve and/or be bundled into less than 90 the degree angle, thus, described bend helps the gas smooth flow by described bend;
The choke valve unit, comprise the gas exhaust piping switching member, described gas exhaust piping switching member is arranged in described second pipeline section of described gas exhaust piping and is supported for is movable, wherein, and the degree that the described gas exhaust piping of the motion control of described gas exhaust piping switching member is opened.
13, substrate processing apparatus according to claim 12, wherein, described bend is a curve.
14, substrate processing apparatus according to claim 12, wherein, the gas that gives off from described vacuum chamber by described vacuum pump is with such flow rate: gas by described gas exhaust piping along the flow velocity of the part of the cross section of the given position intercepting in described bend downstream flow velocity greater than the remainder by described cross section
Described gas exhaust piping switching member is the form of plate, the shape of described plate is corresponding with the shape of the described cross section of described gas exhaust piping and be positioned at the described given position of described gas exhaust piping, the mode that described gas exhaust piping switching member is installed to described gas exhaust piping is, it is rotatable across the rotating shaft that described gas exhaust piping extends that described gas exhaust piping switching member is centered around described given position, thus, described gas exhaust piping switching member has the first and the second portion of the relative both sides that lay respectively at described rotating shaft, wherein, when described gas exhaust piping switching member is in the close position, the described second portion of described gas exhaust piping switching member occupies the described part of the described cross section of described gas exhaust piping, and the described first of described gas exhaust piping switching member occupies the described remainder of the described cross section of described gas exhaust piping.
15, substrate processing apparatus according to claim 14, wherein, the rotating shaft of described gas exhaust piping switching member is crooked with respect to the longitudinal axis of described first pipeline section of described gas exhaust piping.
16, substrate processing apparatus according to claim 15, wherein, described first pipeline section flatly extends from described vacuum chamber, and described second pipeline section extends vertically from described bend.
17, substrate processing apparatus according to claim 16, wherein, the rotating shaft of described gas exhaust piping switching member is along flatly extending with respect to the direction of crooked 90 degree of the longitudinal axis of first pipeline section of described gas exhaust piping.
18, substrate processing apparatus according to claim 12 also comprises heating unit, and described heating unit has with described gas exhaust piping operationally unites the gas that flows through described gas exhaust piping with heating.
19, substrate processing apparatus according to claim 18, wherein, described heater comprises the stratie of the coil form that twines described gas exhaust piping.
20, substrate processing apparatus according to claim 19, wherein, described heater is heated to described gas exhaust piping the temperature of 70 degree to 150 degree effectively.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020060015399 | 2006-02-17 | ||
| KR1020060015399A KR100754243B1 (en) | 2006-02-17 | 2006-02-17 | vacuum apparatus of semiconductor device manufacturing equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101026085A true CN101026085A (en) | 2007-08-29 |
Family
ID=38426906
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2007100065951A Pending CN101026085A (en) | 2006-02-17 | 2007-02-06 | Semiconductor device manufacturing equipment with vacuum system |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20070193573A1 (en) |
| KR (1) | KR100754243B1 (en) |
| CN (1) | CN101026085A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101593666B (en) * | 2008-05-28 | 2011-05-18 | 和舰科技(苏州)有限公司 | Helium pipeline structure for machine platform |
| WO2013040800A1 (en) * | 2011-09-23 | 2013-03-28 | 深圳市华星光电技术有限公司 | Exhaust pipe of vacuum pump for chemical vapor deposition machine station and corresponding vacuum pump |
| CN104878369A (en) * | 2015-06-07 | 2015-09-02 | 上海华虹宏力半导体制造有限公司 | Exhaust pipe connecting element of TEOS (tetraethyl orthosilicate) machine table and exhaust pipe |
| CN111676464A (en) * | 2020-06-17 | 2020-09-18 | 北京北方华创微电子装备有限公司 | Exhaust device of semiconductor processing equipment and semiconductor processing equipment |
| CN115161618A (en) * | 2016-09-16 | 2022-10-11 | 皮考逊公司 | Apparatus and method for atomic layer deposition |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120247953A1 (en) * | 2011-03-28 | 2012-10-04 | Chien-Min Weng | Film-coating system |
| KR101463961B1 (en) * | 2013-02-15 | 2014-11-26 | 최대규 | Plasma process system |
| KR101895289B1 (en) | 2016-10-25 | 2018-09-05 | 프리시스 주식회사 | The valve to discharge line unit with the cyclone |
| US10618085B2 (en) * | 2017-05-31 | 2020-04-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus and methods for exhaust cleaning |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4612207A (en) * | 1985-01-14 | 1986-09-16 | Xerox Corporation | Apparatus and process for the fabrication of large area thin film multilayers |
| DE69421463T2 (en) * | 1993-07-30 | 2000-02-10 | Applied Materials Inc | Deposit of silicon nitride |
| JPH10132141A (en) * | 1996-10-28 | 1998-05-22 | Hitachi Ltd | Conductance adjusting valve and semiconductor manufacturing device |
| JP3037173B2 (en) * | 1997-01-24 | 2000-04-24 | 山口日本電気株式会社 | Decompression processing equipment |
| KR19990023067U (en) * | 1997-12-02 | 1999-07-05 | 구본준 | Powder incinerator of wafer deposition equipment |
| JPH11243059A (en) * | 1998-02-26 | 1999-09-07 | Kokusai Electric Co Ltd | Semiconductor manufacture device |
| US6568417B2 (en) * | 2001-04-17 | 2003-05-27 | Intel Corporation | Throttle valve assembly |
| KR20040012064A (en) * | 2002-07-31 | 2004-02-11 | 삼성전자주식회사 | Vacuum forming equipment for semiconductor manufacturing equipment having improved exhaust structure |
| US6843264B2 (en) * | 2002-12-18 | 2005-01-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Multi-phase pressure control valve for process chamber |
| US6808163B2 (en) * | 2003-02-20 | 2004-10-26 | Taiwan Semiconductor Manufacturing Co., Ltd | Modified blades for process chamber throttle valve |
| KR20040079060A (en) * | 2003-03-06 | 2004-09-14 | 삼성전자주식회사 | exhaust gas system of semiconductor device manufacturing equipment |
-
2006
- 2006-02-17 KR KR1020060015399A patent/KR100754243B1/en not_active IP Right Cessation
- 2006-10-04 US US11/542,108 patent/US20070193573A1/en not_active Abandoned
-
2007
- 2007-02-06 CN CNA2007100065951A patent/CN101026085A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101593666B (en) * | 2008-05-28 | 2011-05-18 | 和舰科技(苏州)有限公司 | Helium pipeline structure for machine platform |
| WO2013040800A1 (en) * | 2011-09-23 | 2013-03-28 | 深圳市华星光电技术有限公司 | Exhaust pipe of vacuum pump for chemical vapor deposition machine station and corresponding vacuum pump |
| CN104878369A (en) * | 2015-06-07 | 2015-09-02 | 上海华虹宏力半导体制造有限公司 | Exhaust pipe connecting element of TEOS (tetraethyl orthosilicate) machine table and exhaust pipe |
| CN115161618A (en) * | 2016-09-16 | 2022-10-11 | 皮考逊公司 | Apparatus and method for atomic layer deposition |
| CN111676464A (en) * | 2020-06-17 | 2020-09-18 | 北京北方华创微电子装备有限公司 | Exhaust device of semiconductor processing equipment and semiconductor processing equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20070082613A (en) | 2007-08-22 |
| US20070193573A1 (en) | 2007-08-23 |
| KR100754243B1 (en) | 2007-09-03 |
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