CN112750725A - Semiconductor processing system - Google Patents

Abstract

A semiconductor processing system includes a process chamber having an interior volume. A pump is coupled in communication with the process chamber to exhaust gases from the semiconductor process chamber. The system includes a plurality of fluid nozzles configured to create a fluid barrier within the outflow channel in response to stopping operation of the pump to inhibit backflow of particles from the outflow channel to the interior space.

Description

Semiconductor processing system

Technical Field

The present disclosure relates to a semiconductor processing system.

Background

Semiconductor wafers are processed in semiconductor processing equipment. Semiconductor wafers undergo a number of processes including thin film deposition, photoresist patterning, etching, dopant implantation, annealing, and other types of processes. These processes ultimately form the features, layers, and circuit elements of the integrated circuits on the semiconductor wafers.

Most processes are performed within a semiconductor processing chamber. The integrated circuits formed on a semiconductor wafer are very sensitive to any variations in shape, film thickness, and dopants. Accordingly, the conditions of the semiconductor processing chamber are tightly controlled to ensure that the shapes, layers, and compositions of the materials fall within selected tolerances. However, in some cases, some errors may occur in the semiconductor process chamber or in the semiconductor process related facilities. In these cases, the semiconductor wafer may be negatively affected if certain conditions within the semiconductor process are not properly maintained.

Disclosure of Invention

In accordance with some embodiments of the present disclosure, a semiconductor processing system includes a semiconductor processing chamber including an interior volume. And a chuck arranged in the inner space and configured to fix the wafer. A semiconductor processing apparatus configured to perform one or more semiconductor processes on the wafer in the interior space. And an outflow channel configured to convey gas from the inner space to the outside of the semiconductor processing chamber. And a plurality of fluid nozzles configured to output the fluid into the outflow channel.

Drawings

Various aspects of the disclosure can be understood from the following detailed description when read in conjunction with the accompanying drawings. It should be noted that, in accordance with standard practice in the industry, various features are not drawn to scale. In fact, the dimensions of various features may be arbitrarily increased or reduced for clarity of discussion.

FIG. 1 is a block diagram of a semiconductor processing system in accordance with some embodiments of the present disclosure;

FIG. 2 is a schematic diagram of a semiconductor processing system in accordance with some embodiments of the present disclosure;

FIG. 3A is a top view of a first fluid nozzle of an output channel of a semiconductor processing chamber in accordance with some embodiments of the present disclosure;

FIG. 3B is a side view of the first fluid nozzle of the outflow channel of FIG. 3A;

FIG. 4A is a top view of a second fluid nozzle of an output channel of a semiconductor processing chamber in accordance with some embodiments of the present disclosure;

FIG. 4B is a side view of a second fluid nozzle of the outflow channel of FIG. 4A;

FIG. 5 is a schematic view of an arrangement of fluid nozzles relative to an output channel of a semiconductor processing chamber in accordance with some embodiments of the present disclosure;

FIG. 6 is a top view of first and second fluid nozzles of an output channel of a semiconductor processing chamber in accordance with certain embodiments of the present disclosure;

FIG. 7 is a flow chart of a semiconductor processing method according to some embodiments of the present disclosure.

[ notation ] to show

100,200 semiconductor processing system

102 semiconductor process chamber

103 inner space

104 processing apparatus

106 wafer

108 chuck

110: outflow channel

111 nozzle array

112 pump

113 inductor

114 controller

120A,120B fluid nozzle

121: orifice

122 fluid source

124: valve

700 method

702,704,706 operations

A is the central axis

θ,

Angle of rotation

Detailed Description

The following disclosure provides many different embodiments, or examples, for implementing different features of the subject matter presented herein. A specific example of components and arrangements are described below to simplify the present disclosure. Of course, this example is merely illustrative and not intended to be limiting. For example, the following description of a first feature formed over or on a second feature may, in embodiments, include the first feature being in direct contact with the second feature, and may also include forming additional features between the first and second features such that the first and second features are not in direct contact. Moreover, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.

Furthermore, spatially relative terms, such as "below", "lower", "above", "upper", and the like, are used herein to simplify description to describe one element or feature's relationship to another element or feature as illustrated in the figures. Spatially relative terms also encompass different orientations of the elements in use or operation in addition to the orientation depicted in the figures. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.

FIG. 1 is a block diagram of a semiconductor processing system 100 according to an embodiment of the present disclosure. The semiconductor processing system 100 includes a semiconductor processing chamber 102, an effluent channel 110, a pump 112, and a controller 114. The semiconductor processing chamber 102 has an interior space 103. The semiconductor processing chamber 102 includes processing equipment 104, a chuck (chuck)108, and a sensor 113. Chuck 108 is configured to hold or support a substrate, such as semiconductor wafer 106, during semiconductor processing. The processing equipment 104 and the inductor 113 are at least partially located within the semiconductor processing chamber 102.

In some embodiments, the semiconductor processing chamber 102 is configured to perform one or more semiconductor processes on the wafer 106. Wafer 106 is a semiconductor wafer. Generally, semiconductor wafers undergo extensive processing during fabrication. These processes may include thin film deposition, photoresist patterning, etching processes, dopant implantation processes, annealing processes, and other types of processes. After all processing steps are completed, the semiconductor wafer 106 is diced into individual integrated circuits.

In some embodiments, the semiconductor processing chamber 102 is a thin film deposition chamber. The thin film deposition chamber may include a chemical vapor deposition chamber, a sputtering chamber, a physical vapor deposition chamber, an atomic layer deposition chamber, a plasma enhanced vapor deposition chamber, an epitaxial growth chamber, or other types of thin film deposition chambers. In accordance with some embodiments of the present disclosure, those skilled in the art will appreciate that the semiconductor processing chamber 102 may include thin film deposition chambers other than those described above without departing from the scope of embodiments of the present disclosure.

In some embodiments, the semiconductor processing chamber 102 is an etch chamber. The etch chamber is used to etch the thin film deposited on the wafer 106. The etch chamber may comprise a chamber for a wet etch, dry etch, plasma etch, or other type of etch process. Etch chambers other than those described above may be utilized without departing from the scope of embodiments of the present disclosure.

In some embodiments, the semiconductor processing chamber 102 is a dopant implantation chamber. The dopant implantation chamber may comprise an ion implantation chamber in which the wafer 106 is bombarded with dopant ions. Dopant ions are implanted into the wafer 106 according to selected parameters for the ion implantation process. The dopant implantation chamber may include dopant implantation processes other than those described above without departing from the scope of embodiments of the present disclosure.

The semiconductor processing chamber 102 includes processing equipment 104. The processing tool 104 provides assistance to the semiconductor process. The processing equipment 104 may include equipment that assists in thin film deposition processes, etching processes, ion implantation processes, annealing processes, photolithography processes, and other types of processes. The processing equipment 104 may be located entirely within the semiconductor processing chamber 102. The processing equipment 104 may be located partially within the semiconductor process chamber 102 and partially outside the semiconductor process chamber 102. The processing equipment 104 may be located entirely outside of the semiconductor processing chamber 102.

In order to achieve uniform results across a large number of wafers 106 in different semiconductor processes, it is beneficial to maintain the temperature within the semiconductor process chamber within a selected range during the processing. If the temperature is not well controlled in a semiconductor processing environment, the semiconductor wafer may have poor uniformity, undesirable performance characteristics, or may need to be scrapped entirely. Accordingly, the semiconductor processing apparatus 104 may include a heater to heat the interior space 103.

In addition, different semiconductor processes may require specific pressure conditions within the semiconductor process chamber 102. For example, certain semiconductor processes may require vacuum conditions within the interior space 103 in order to achieve desired results in the wafer 106. Semiconductor processing may require high pressures within the interior space 103 in order to achieve desired results in the wafer 106. Thus, the pressure conditions in the semiconductor processing chamber 102 will be selected based on the type of particular semiconductor process.

Although not shown in FIG. 1, the processing tool 104 may include various fluid inlets configured to supply fluids to the semiconductor processing chamber 102 during semiconductor processing. The processing tool 104 may provide fluids to etch portions of the wafer 106 or to deposit thin films on the wafer 106. The processing equipment 104 can provide an inert gas to pressurize the interior space 103 or to purge other fluids or particles from the interior space 103.

In some embodiments, the outflow channel 110 is configured to transport fluids, particles, or other materials from the interior space 103 to the exterior of the semiconductor processing chamber 102. The outflow channel 110 may include one or more mechanisms for selectively opening or closing the outflow channel 110. Selectively opening and closing the outflow channel 110 may be used to vent the interior space 103 or prevent fluids or particulates from exiting the interior space 103.

In some embodiments, a pump 112 is coupled to the outflow channel 110. The pump 112 is disposed in the internal space 103 to generate and maintain a vacuum state. For example, if a semiconductor process requires a vacuum to be maintained within interior space 103, outflow channel 110 may be opened and pump 112 may be operated to pump fluid from interior space 103 through outflow channel 110. The pump 112 may also be operated to maintain a selected low pressure other than vacuum. As used herein, the term "vacuum" may include conditions where a complete vacuum is not achieved. Thus, the term "vacuum" may include extremely low, but non-zero, pressures.

In some embodiments, the controller 114 controls the pump 112. The controller 114 may control the pump 112 to create a selected pressure condition within the interior space 103 by causing the pump 112 to pump fluid from the interior space 103 through the outflow channel 110. For example, the controller 114 may cause 112 the pump to create a vacuum condition within the interior space 103. The controller 114 may periodically operate the pump 112 to maintain a selected pressure within the interior space 103.

In some embodiments, the controller 114 controls a valve or other mechanism of the outflow passage 110 to selectively open or close the outflow passage 110. The controller 114 may open or close the outflow channel 110 to maintain or achieve selected pressure conditions within the interior space 103. The controller 114 may open or close the outflow passage 110 in conjunction with operation of the pump 112 to maintain or achieve selected pressure conditions.

In some embodiments, the sensor 113 senses one or more physical parameters within the interior space 103. The sensor 113 generates a sensing signal that is representative of one or more parameters sensed via the sensor 113. The sensor 113 outputs a sensing signal.

In some embodiments, sensor 113 is a pressure sensor. The pressure sensor is configured to sense a pressure in the internal space 103 and generate a sensing signal, which represents the pressure in the internal space 103. The pressure sensor outputs a pressure signal.

In some embodiments, the controller 114 receives the sensor signal from the sensor 113. The controller 114 may control the pump 112, outflow channel 110, and treatment device 104 to respond to the sensor signals. Accordingly, the controller 114 may control the operation of various components of the semiconductor processing system 100 based on the values of the sensor signals. If the sensor signal indicates that the pressure within the interior space 103 is below the desired pressure, the controller 114 may cause the pump 112 to increase the pumping action. If the sensor signal indicates that the pressure within the interior space 103 is above the desired pressure, the controller 114 may cause the pump 112 to reduce the pumping action.

In some cases, sensor 113 may generate a signal, thereby causing a pressure alarm to occur within controller 114. During a pressure alarm, the pump 112 may cease to operate. Further, during a pressure alarm, the valve mechanism within the outflow passage 110 may cease to operate. As will be described in more detail below, this can create a large problem for the wafer 106.

Integrated circuits include many layers and structures composed of semiconductor materials, dopant ions, dielectric materials, metallic materials, and other types of materials. The shape, dimensions and composition of these material structures may need to fall within tight tolerances for the integrated circuit to function properly. Thus, if undesirable particles, gases, or materials come into contact with the wafer 106 or otherwise interact with the wafer 106 during semiconductor processing, the wafer 106 may be contaminated, or the shape, size, or components of the film may be contaminated. The material will be damaged. If this occurs, the integrated circuits fabricated from wafer 106 may not function properly, or may not function at all.

Thus, in an alarm situation, if the pump 112 is inoperable and the outflow channel 110 is unable to close or open, particles or fluid may enter the interior space 103 from the outflow channel 110. The previously evacuated material may re-enter the outflow channel 110 and return to the interior space 103. Alternatively, other contaminants from outside the semiconductor processing chamber 102 may enter the interior space 103 through the outflow channel 110. If this occurs in the presence of the wafer 106, particles or fluids may contaminate or damage the wafer 106.

In some embodiments, the semiconductor processing system 100 utilizes the nozzle array 111 to prevent or inhibit undesired particles, fluids, or materials from returning to the interior space 103 through the outflow channel 110 in a state where the pump 112 is stopped and the outflow channel 110 cannot be closed. In particular, the nozzle array 111 may implement a protective fluid barrier within the outflow channel 110. This protective fluid barrier inhibits or prevents particles, fluids, or other materials from entering the interior space 103 via the outflow channel 110.

In some embodiments, the nozzle array includes a plurality of nozzles. Each nozzle is configured to output fluid into the outflow channel 110. The fluid from each nozzle of the nozzle array 111 collectively forms a fluid barrier. The fluid barrier prevents backflow of particles, fluids, or materials into the interior space 103. In other words, particles, fluids, or materials flowing from outside the semiconductor processing chamber 102 into the outflow channel 110 will not pass through the fluid barrier formed by the nozzle array 111 together.

In some embodiments, the nozzle array 111 outputs a fluid that is non-reactive with the wafer 106. For example, the nozzle array 111 may output an inert gas. In a real worldIn an embodiment, the fluid may comprise argon, nitrogen (N)₂) One or more of air, helium, or other types of gases or fluids selected to not damage the wafer 106 and to partially flow into the interior space 103. The nozzle array 111 may utilize fluids other than those described above without departing from the scope of the present disclosure.

In some embodiments, the nozzle array 111 outputs fluid in a substantially horizontal direction across the outflow channel 110. In particular, the nozzle array 111 may comprise nozzles arranged around the inner circumference of the outflow channel 110. May be oriented to output fluid horizontally across the outflow channel 110. In other words, under normal operation of the pump 112, each nozzle may be positioned to output fluid in a direction that is substantially perpendicular to the direction of fluid flow through the outflow channel 110.

In some embodiments, the nozzle array 111 outputs fluid in a rotating stream within the outflow channel 110. For example, each nozzle may be oriented to output fluid along a trajectory out of the inner wall of the channel 110. The nozzles may be positioned along the inner circumference of the outflow channel and oriented such that the fluid output from each nozzle results in a collective swirl (swirling) or rotational flow within the outflow channel 110. The rotational movement of the fluid within the outflow channel 110 may be in a clockwise or counterclockwise direction when viewed from the top of the outflow channel 110. The rotational, swirling, or swirling motion of the fluid output by the nozzle array 111 forms a fluid barrier that prevents particles, other fluids, or materials from flowing back through the interior space 103 of the fluid barrier.

In some embodiments, the nozzle array 111 outputs a rotating fluid having a downward trajectory. Each nozzle of the nozzle array is oriented along the inner wall of the outflow channel 110 and slightly downward. Causing the bulk fluid to rotate about the outflow channel 110 and proceed in a downward direction. This has the additional effect of pushing unwanted particles, fluids or materials down and out of the outflow channel 110.

In some embodiments, as described above, the nozzle array 111 includes a first set of nozzles that output fluid horizontally across the outflow channel 110. The nozzle array 111 also includes a second set of nozzles that output fluid in a rotational motion as described above. The combination of the horizontally oriented nozzles and the rotationally oriented nozzles creates an effective fluid barrier that prevents unwanted particles, fluids, or materials from entering the interior space 103 through the fluid barrier. Other configurations of nozzles and fluid output directions may be utilized to form a fluid barrier to prevent backflow of undesirable particles, materials, or fluids into the interior space 103 without departing from the scope of embodiments of the present disclosure.

FIG. 2 is a schematic diagram of a semiconductor processing system 200 according to some embodiments. The semiconductor processing system 100 includes a semiconductor processing chamber 102, an effluent channel 110, a pump 112, and a controller 114. The semiconductor processing chamber 102 has an interior space 103. The semiconductor processing chamber 102 includes a processing tool 104, a chuck 108. The chuck 108 is configured to hold or otherwise support the wafer 106 during semiconductor processing.

In some embodiments, the semiconductor processing system 200 includes a valve 124 in the effluent channel 110. The valve 124 is configured to selectively open or close the outflow channel 110 to enable fluid flow through the outflow channel 110. Valve 124 is coupled to controller 114. The controller 114 may open or close the valve 124. In some embodiments, the controller 114 may partially open the valve to selectively restrict the flow of fluid through the outflow channel 110. The semiconductor processing system 200 may include mechanisms other than valves for selectively opening and closing the outflow channel 110.

As previously described, the pump 112 is configured to pump fluid from the interior space 103 through the outflow channel 110 to the exterior of the semiconductor processing chamber 102. The pump 112 may establish and maintain a vacuum within the interior space 103. Other pressure conditions may also be established and maintained within the interior space 103 by the pump 112.

As previously described, an alarm condition or fault condition indicated by sensor 113 may cause controller 114 to disable pump 112 and maintain valve 124 in an open state. In this case, the controller 114 may control the nozzle array 111 to create a fluid barrier within the outflow channel 110. The fluid barrier prevents particles, fluids or materials from flowing back into the interior space 103 through the outflow channel 110. The same signal that disables pump 112 may be used simultaneously to enable nozzle array 111.

The nozzle array 111 is located at least partially within the outflow channel 110. The nozzle array 111 includes a set of first fluid nozzles 120A and a set of second fluid nozzles 120B. The fluid source 122 supplies fluid to the fluid nozzles 120A, 120B. The nozzle array 111 is configured to create a fluid barrier within the outflow channel 110 by outputting fluid into the outflow channel in a selective manner.

The fluid source 122 may supply a fluid that is non-reactive with the semiconductor wafer 106. The fluid source 122 may supply an inert gas. The inert gas may include argon, N₂Helium or another inert gas. The fluid may comprise air.

In some embodiments, the first fluid nozzle 120A outputs fluid in a substantially horizontal direction across the exit channel 110. In particular, the first fluid nozzle 120A is positioned around an inner circumference of the outflow channel 110. The fluid nozzle 120A may be oriented to output fluid horizontally across the outflow channel 110. Accordingly, during normal operation of the pump 112, each first fluid nozzle 120A may be oriented to output fluid in a direction that is substantially perpendicular to the vertical direction or substantially perpendicular to the direction of fluid flow through the outflow channel 110.

In some embodiments, the second fluid nozzle 120B outputs a fluid having a rotational flow within the outflow channel 110. For example, each second fluid nozzle 120B may be oriented to output fluid along a trajectory of the inner wall of the outflow channel 110. The second fluid nozzle 120B may be positioned along an inner circumference of the outflow channel and oriented such that fluid output from the second fluid nozzle 120B causes a collective swirling or rotational flow of fluid within the outflow channel 110. The fluid within the outflow channel 110 may be in a clockwise or counterclockwise direction when viewed from the top of the outflow channel 110. The rotational, swirling, or swirling motion of the fluid output by the nozzle array 111 creates a barrier that prevents particles, other fluids, or materials from flowing back into the interior space 103 via the fluid barrier.

In some embodiments, the rotating fluid output by the second fluid nozzle 120B has a downward trajectory. Each second fluid nozzle 120B is positioned along the inner wall of the outflow channel 110 and slightly downward. So that the entire fluid flow rotates around the outflow channel 110 and advances in a downward direction while rotating around the outflow channel 110. This has the additional effect of pushing unwanted particles, fluids or materials down the outflow channel 110.

In some embodiments, as described above, the nozzle array 111 includes a first set of nozzles that output fluid horizontally across the outflow channel 110. The nozzle array 111 also includes a second set of nozzles that output fluid in a rotational motion as described above. The combination of the horizontal spray nozzles and the rotary spray nozzles creates an effective fluid barrier that prevents unwanted particles, fluids, or materials from entering the interior space 103 through the fluid barrier. Other arrangements of nozzles and fluid output directions may be utilized to form a fluid barrier or otherwise prevent undesirable backflow of particles, materials, or fluids into the interior space 103 without departing from the scope of embodiments of the present disclosure.

FIG. 3A is a top view of a first fluid nozzle 120A of the nozzle array 111 within the effluent channel 110 of the semiconductor processing chamber 102, in accordance with some embodiments. The first fluid nozzle 120A is disposed around an inner circumference of the outflow channel 110. Each first fluid nozzle 120A is oriented to output fluid substantially horizontally across the outflow channel 110. In the example of fig. 3A, there are eight first fluid nozzles 120A. However, the nozzle array 111 may include more than eight first fluid nozzles or fewer than eight first fluid nozzles without departing from the scope of embodiments of the present disclosure. Furthermore, the first fluid nozzle 120A may be arranged differently than shown in fig. 3A without departing from the scope of embodiments of the present disclosure. Although not shown in fig. 3A, a portion of the first fluid nozzle 120A may be located outside of the outflow channel 110. That is, a portion of the first fluid nozzle 120A may be located within the outflow channel 110, while other portions of the first fluid nozzle 120A may be located outside of the outflow channel 110.

The first fluid nozzle 120A has an orifice 121. Fluid is output from the first fluid nozzle 120A via the orifice 121. In some embodiments, each orifice 121 has a diameter between about 2mm and about 10 mm. The orifice 121 may have a diameter different than the diameters described above without departing from the scope of embodiments of the present disclosure. The diameter of the orifice 121 may be selected based in part on the desired fluid flow rate from the fluid nozzle 120A.

In some embodiments, the first fluid nozzle 120A is oriented such that the orifice 121 outputs fluid toward the central axis a of the outflow channel 110. The central axis a extends vertically through the center of the outflow channel 110. The first fluid nozzle 120 may collectively create a fluid barrier that prevents unwanted fluids or particles from entering the semiconductor processing chamber 102 through the outflow channel 110. The first fluid nozzle 120A may also have other different orientations without departing from the scope of embodiments of the present disclosure.

The controller 114 may actuate the first fluid nozzle 120A. When actuated, each first fluid nozzle 120A outputs fluid horizontally along the outflow channel 110. The first fluid nozzles 120A create a fluid barrier by the fluid output from each of the first fluid nozzles 120A. The fluid barrier effectively prevents particles, fluids, or other materials from re-entering the interior space 103 of the semiconductor processing chamber 102 through the outflow channel 110.

Fig. 3B is a side view of the first fluid nozzle 120A of fig. 3A, according to some embodiments. In fig. 3B, the controller 114 has activated the first fluid nozzle 120A. The view of fig. 3B shows a substantially horizontal output of fluid from the first fluid nozzle 120A. As described herein, horizontal output as referred to herein means that the fluid is output primarily in a horizontal direction, although some fluid may travel slightly up or down.

FIG. 4A is a top view of a second fluid nozzle 120B of the nozzle array 111 within the effluent channel 110 of the semiconductor processing chamber 102, in accordance with some embodiments. The second fluid nozzle 120B is arranged around the inner circumference of the outflow channel 110. Each second fluid nozzle 120B is oriented to selectively output fluid along the inner wall of the outflow channel 110 and create a spin or vortex. The fluid flowing out of the channel 110 generates a vortex. Although not apparent in fig. 4A, the second fluid nozzle 120B may also be oriented downward to create a swirling flow of fluid moving in a downward direction through the outflow channel 110. In the example of fig. 4A, there are six second fluid nozzles 120B in the outflow channel 110. However, the nozzle array 111 may include more than six second fluid nozzles or fewer second fluid nozzles without departing from the scope of embodiments of the present disclosure. Furthermore, the second fluid nozzle 120B may be configured and oriented differently than shown in fig. 4A without departing from the scope of embodiments of the present disclosure.

Each second fluid nozzle 120B is oriented at an angle θ relative to a central axis a directed toward the outflow channel 110. The central axis a extends vertically through the center of the outflow channel 110. The angle θ is selected to ensure that the fluid released from the fluid nozzle 120B travels in a rotational motion along the inner wall of the outflow channel 110. The angle θ is defined as the angle at which the orifice 121 is rotationally offset from pointing toward the central axis a in a horizontal plane. In some embodiments, the angle θ is between about 25 ° and about 35 °. The angle θ may have other values without departing from the scope of the present disclosure. Although only the angle θ of one of the second fluid nozzles 120B is shown, the orientation of the aperture 121 of each second fluid nozzle 120B relative to the central axis a may have the same angle θ. In other embodiments, the second fluid nozzles 120B may have different values of θ from each other.

The controller 114 may actuate the second fluid nozzle 120B. Each second fluid nozzle 120B outputs fluid in a selected direction to create a rotation, swirl, or vortex of fluid within the outflow channel 110. The second fluid nozzles 120B create a fluid barrier through the fluid output by each second fluid nozzle. The fluid barrier effectively prevents particles, fluids, or other materials from re-entering the interior space 103 of the semiconductor processing chamber 102 through the outflow channel 110. In the example of fig. 4B, the fluid is rotating in a clockwise direction from a top view. However, the second fluid nozzle may be oriented to generate a flow field in a counter-clockwise direction without departing from the scope of embodiments of the present disclosure.

FIG. 4B is a side view of the second fluid nozzle 120B of FIG. 4A, according to some embodiments. Fig. 4B depicts the second fluid nozzle 120B oriented downward relative to horizontal. The downward orientation of the second fluid nozzle 120B ensures that the fluid moves in a downward direction while rotating about the outflow channel 110.

Each second fluid nozzle 120B is oriented at a downward angle relative to horizontal or relative to the X-Y plane. The central axis a extends vertically through the center of the outflow channel 110. Angle of the second fluid nozzle 120B

Selected to ensure that the fluid released from fluid nozzle 120B travels downward when rotated. In some embodiments, the angle

Between about 20 ° and about 30 °. Angle of rotation

Is selected to ensure that the rotating fluid flows gradually downwards. Angles without departing from the scope of embodiments of the present disclosure

Other values are possible. Although only one second fluid nozzle 120B angle is shown

The orifices 121 of each second fluid nozzle 120B may have the same angle relative to horizontal

In other embodiments, the second fuel nozzles 120B may have different fuel nozzles from one another

The value is obtained.

In some embodiments, the controller 114 may operate the first fluid nozzle 120A and the second fluid nozzle 120B simultaneously. Thus, the fluid barrier is comprised of fluid output horizontally from the first fluid nozzle 120A and rotating fluid output from the second fluid nozzle 120B. Additionally or alternatively, the controller 114 may selectively operate the first fluid nozzle 120A or the second fluid nozzle 120B. In some embodiments, the controller 114 may selectively operate the independent first fluid nozzle 120A or the second fluid nozzle 120B.

Fig. 5 is a top view of a first fluid nozzle 120A, according to some embodiments, the first fluid nozzle 120A outputting fluid into the outflow channel 110. In fig. 5, the first fluid nozzle 120A is located entirely outside of the outflow channel 110. The outflow channel 110 may include holes through which the first fluid nozzle 120A may output fluid to the interior of the outflow channel 110. The output end of the first fluid nozzle 120A may be positioned to completely cover the aperture in the outflow channel 110. Although not shown in the drawings, the second fluid nozzle 120B may also be located entirely outside the outflow channel 110.

Fig. 6 is a top view of an outflow channel 110 according to some embodiments. In fig. 6, the first fluid nozzle 120A and the second fluid nozzle 120B are located in the same horizontal plane. The first fluid nozzle 120A is oriented to output fluid horizontally toward the central axis a of the outflow channel 110. The second fluid nozzle 120B is oriented at a horizontal angle θ and a vertical angle

The fluid is output (see fig. 4A and 4B), as described in fig. 4A and 4B. The first and second fluid nozzles 120A,120B shown in fig. 6 may be more or less numerous without departing from the scope of the present disclosure.

FIG. 7 is a flow chart of a semiconductor processing method 700 according to some embodiments. At operation 702, the method 700 includes performing a semiconductor process on a semiconductor wafer in an interior volume of a semiconductor process chamber. One example of a semiconductor wafer is wafer 106 of fig. 1. One example of a semiconductor processing chamber is the semiconductor processing chamber 102 of FIG. 1. One example of an interior space is interior space 103 of fig. 1. In operation 704, the method 700 includes exhausting gas from the interior space through an outflow channel coupled to the interior space. One example of an outflow channel is the outflow channel 110 of fig. 1. In operation 706, the method 700 includes inhibiting backflow of particles into the interior space via the outflow channel by outputting fluid from the plurality of fluid nozzles into the outflow channel. One example of a fluid nozzle is fluid nozzles 120A and 120B of fig. 2.

In accordance with some embodiments of the present disclosure, a semiconductor processing system includes a semiconductor processing chamber including an interior volume; a chuck configured in the inner space and configured to fix the wafer; a semiconductor processing apparatus configured to perform one or more semiconductor processes on the wafer in the interior space; an outflow channel configured to convey gas from the interior space to an exterior of the semiconductor processing chamber; and a plurality of fluid nozzles configured to output the fluid into the outflow channel.

According to some embodiments, the fluid nozzle is configured to output the fluid into the outflow channel, thereby inhibiting a backflow of the particles from the outflow channel into the interior space.

According to some embodiments, one or more of the fluid nozzles are disposed at least partially within the outflow channel.

According to some embodiments, a controller is also included that is communicatively coupled to the fluid nozzles and configured to selectively actuate the fluid nozzles.

According to some embodiments, the apparatus further comprises a pump configured to pump gas from the interior space through the outflow channel.

According to some embodiments, the controller is configured to actuate the fluid nozzle in response to an error condition of the pump.

According to some embodiments, the apparatus further comprises a sensor coupled to the controller and configured to provide a sensing signal to the controller.

According to some embodiments, the fluid nozzles are arranged along the circumference of the outflow channel.

According to some embodiments, each of the fluid nozzles is configured to output the fluid in a direction substantially perpendicular to a main flow direction of the outflow channel.

According to some embodiments, wherein the fluid nozzle is configured to generate a rotating flow of fluid within the outflow channel.

In accordance with some embodiments of the present disclosure, a method for using a semiconductor processing system includes performing a semiconductor process on a semiconductor wafer within an interior space of a semiconductor processing chamber; exhausting gas from the interior space via an outflow channel communicatively connected to the interior space; the fluid is output to the outflow channel through the plurality of fluid nozzles to inhibit the backflow of the particles to the inner space through the outflow channel.

According to some embodiments, the method further comprises pumping gas from the interior space through the outflow channel by a pump to exhaust the gas from the interior space; stopping operation of the pump; and actuating the fluid nozzle in response to or in conjunction with the pump stopping.

According to some embodiments, further comprising generating a plurality of sensing signals representative of a condition of the interior space; stopping the operation of the pump in response to the sensing signal; and actuating the fluid nozzle in response to the sensing signal.

According to some embodiments, wherein outputting the fluid comprises creating a fluid barrier within the outflow channel.

According to some embodiments, wherein the output fluid comprises a horizontal stream of the first set of output fluids from the fluid nozzles; and generating a rotating flow of fluid within the outflow channel through the second group of fluid nozzles.

According to some embodiments, wherein the fluid comprises an inert gas.

According to some embodiments, wherein the fluid comprises air.

In accordance with some embodiments of the present disclosure, a semiconductor processing system includes a semiconductor processing chamber including an interior volume; a chuck configured in the inner space and configured to fix the wafer; an outflow channel configured to convey gas from the interior space to an exterior of the semiconductor processing chamber; and a plurality of fluid nozzles configured in the outflow channel through which the output fluid flows, so as to suppress backflow of the particles into the internal space through the outflow channel.

According to some embodiments, wherein the fluid nozzles comprise a first group of fluid nozzles oriented to output fluid in a direction substantially perpendicular to a primary flow direction of the outflow channel. And a second set of fluid nozzles oriented to generate a rotating flow of fluid within the outflow channel.

According to some embodiments, the second group of fluid ejection nozzles is disposed below the first group of fluid ejection nozzles.

The foregoing outlines features of several embodiments so that those skilled in the art may better understand the aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions, and alterations herein without departing from the spirit and scope of the present disclosure.

Claims (1)

1. A semiconductor processing system, comprising:

a semiconductor processing chamber including an interior space;

a chuck, configured in the inner space and configured to fix a wafer;

a semiconductor processing apparatus configured to perform one or more semiconductor processes on the wafer in the interior space;

an outflow channel configured to convey gas from the interior space to an exterior of the semiconductor processing chamber; and

the fluid nozzles are configured to output a fluid to the outflow channel.

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