KR20040079060A - exhaust gas system of semiconductor device manufacturing equipment - Google Patents

Abstract

PURPOSE: An exhaust system of equipment for fabricating a semiconductor device is provided to prevent damage to a main pump by blocking a control valve when the constituting elements of a chamber or a turbo pump need to be repaired or replaced and by performing a process while the main pump is constantly driven. CONSTITUTION: By using the first pipe(16), the turbo pump(18) is connected to the chamber(10) in which a process is performed. The main pump drives exhaust gas from the turbo pump, connected to the turbo pump by using the second pipe(20). At least one control valve selectively blocks the flow of the exhaust gas driven to the main pump through the second pipe. The control valve may be a throttle valve.

Description

Exhaust gas system of semiconductor device manufacturing equipment

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exhaust system of a semiconductor device manufacturing facility, and more particularly to a replacement on an exhaust line connected to a vacuum pump to form a vacuum pressure condition as a process condition in a manufacturing facility that performs a unit process for a semiconductor device. When required, the present invention relates to an exhaust system of a semiconductor device manufacturing facility which prevents damage and breakage of a pump, and at the same time, facilitates replacement or repair work.

In general, semiconductor devices are made of a plurality of circuit layers by selectively and repeatedly performing processes such as photolithography, etching, chemical vapor deposition, ion implantation, diffusion, and metal deposition on a wafer. These semiconductor device manufacturing processes generally consist of supplying process sources such as various gases or liquid chemicals under a predetermined process atmosphere, and causing these process sources to affect the wafer. Then, the unreacted process source or the reaction by-products supplied after the above process have a discharge process through a pipe for the next process. One of the main management items in the above-described process progress is that it is necessary to achieve a predetermined vacuum pressure atmosphere as the process conditions in order for the supplied process source to normally affect the wafer. In addition, after the end of the process, the process source remains unreacted or is synthesized with other process sources and remains in the chamber, and these residues quickly act as a cause of the process defect in the next process. It needs to be discharged. In this relation, the exhaust system of the semiconductor device manufacturing equipment for discharging a predetermined vacuum pressure atmosphere and residual materials in the chamber will be described with reference to the accompanying drawings, wherein the configuration of the semiconductor device manufacturing equipment is etched. Performing the process will be described as an example.

First, in the conventional exhaust system configuration, as shown in FIG. 1, there is a chamber 10 that selectively forms an airtight atmosphere in order to achieve a process atmosphere, and the wafer W injected into the chamber 10 is adsorbed. A lower electrode 12 which is fixed and applies high frequency power and an upper electrode 14 which is positioned above the wafer W placed on the lower electrode 12 and is applied with a high frequency bar power electrode opposite to the lower electrode 12. Equipped. The first pipe 16 for guiding the discharge of air and residual materials therein is connected to the side of the chamber 10, and the opposite end of the first pipe 16 is connected to the first pipe 16. Through it is connected to the turbo pump 18 to provide a predetermined vacuum pressure, that is, a suction force for inducing the flow of the residual material including air in the chamber (10). In addition, the other side of the turbopump 18 described above is connected to the second pipe 20 for guiding the flow of induced air and residual material, and the other end of the second pipe 20 is again connected. It is connected to the main pump 24 which provides a vacuum pressure to induce the flow of air and residual material derived from the turbopump 18, and then the air and the residual material passing through the main pump 24 are Flow through the exhaust duct (not shown for simplicity).

In such a relational structure, the process gas supplied into the chamber 10 is converted into a plasma state under the influence of the high frequency power applied to the upper and lower electrodes 14 and 12 described above. The process source often forms a fume as a reaction by-product of various types of polymers after reacting with the wafer (W).

On the other hand, when each of the components forming the chamber 10 or the turbopump 18 needs to be repaired or replaced from the above-described configuration, the semiconductor device including the chamber 10 or the turbopump 18 and the main pump 24. The operation of each component constituting the manufacturing facility is stopped and repair or replacement of necessary components is performed. At this time, as described above, when the driving of the main pump 24 is in a stopped state for a long time, the residual fume-like residual material is mixed with the lubricating oil and the like in the constituent portion of the main pump 24 and the main pump 24 In addition to acting as a deterrent to the operation of the re-starting of the pump, the life of the main pump 24 is shortened. This not only causes problems such as an increase in the amount of work resulting from the repair or replacement of each of the other components including the chamber 10 and the turbopump 18 described above, resulting in delays in work time and troublesome workers, but also high cost. This leads to problems such as a decrease in the yield of semiconductor devices due to a decrease in the operation rate of the manufacturing equipment.

SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned problems of the prior art, and it is possible to replace a phase on an exhaust line connected to a vacuum pump to form a vacuum pressure condition as a process condition in a manufacturing facility that performs a unit process for a semiconductor device. When necessary, it is possible to prevent damage and breakage of the pump, and to easily perform replacement or repair work, and to extend the service life of the main pump and to improve the yield of semiconductor device manufacturing. An exhaust system of a semiconductor device manufacturing facility is provided.

1 is a schematic cross-sectional view showing a configuration of an exhaust system of a semiconductor device manufacturing apparatus according to the prior art.

2 is a cross-sectional view schematically showing the configuration of an exhaust system of a semiconductor device manufacturing apparatus according to an embodiment of the present invention.

※ Explanation of symbols about main part of drawing ※

10 chamber 12 lower electrode

14: upper electrode 16: the first pipe

18: turbopump 20: second piping

22: layer 24: main pump

A characteristic configuration according to the present invention for achieving the above object is a turbo pump connected to the first pipe from the chamber in which the process is made; In the exhaust system of the semiconductor device manufacturing equipment consisting of a main pump for inducing exhaust gas by connecting to the second pipe from the turbo pump, for selectively blocking the flow of exhaust gas guided to the main pump on the second pipe It is characterized by consisting of at least one control valve. In addition, the control valve is preferably composed of a throttle valve.

Hereinafter, an exhaust system of a semiconductor device manufacturing apparatus according to the present invention for achieving the above object will be described with reference to the accompanying drawings.

2 is a configuration diagram schematically illustrating an exhaust system of a semiconductor device manufacturing apparatus according to an exemplary embodiment of the present invention. The same reference numerals are assigned to the same parts as in the related art, and detailed description thereof will be omitted.

Referring to the configuration of the exhaust system of the semiconductor device manufacturing equipment according to the present invention, as shown in Fig. 2, a vacuum pressure atmosphere as a process condition is applied to the chamber 10 to form a closed atmosphere selectively to achieve the process atmosphere The turbopump 18 for forming is connected to the first connecting pipe 16, and the residual material which is induced and discharged by the turbopump 18 is provided from the main pump 24 through the second pipe 20. Induction discharge is performed by exhaust duct by vacuum pressure. In addition, the second pipe 20 is provided with a control valve 30 for selectively blocking the induction of the fluid through the second pipe 20 between the turbo pump 18 and the main pump 24. Doing. The control valve 30 used in this way is preferably to use a throttle valve.

According to this configuration, when the above-described chamber 10 or turbo pump 18 and the above-described configuration is abnormal, the control valve 30 is blocked from the vacuum pressure provided from the main pump 24 described above. In the process of continuously driving the main pump 24, the repair and replacement work proceeds. Accordingly, the main pump 24 is prevented from being damaged or operating error due to the fume on the second pipe 20 due to the continuous driving, thereby extending the life of the main pump 24. In addition, after the above repair or replacement work is performed, the second pipe 20 is connected, and the control valve 30 on the second pipe 20 is opened to transfer the vacuum pressure by the main pump 24. It is easy to work according to the progress of the process to do this, and the work time until the restoration of the facility is shortened, thereby improving the operation rate for the expensive manufacturing equipment and thereby the semiconductor device manufacturing yield.

Therefore, according to the present invention, when the repair and replacement of the configuration including the chamber or the turbo pump is required, the operation can be performed in a state in which the main valve is continuously driven by shutting down the control valve to stop the operation of the main pump. There is an effect of preventing damage or damage in advance.

Although the present invention has been described in detail only with respect to specific embodiments, it will be apparent to those skilled in the art that modifications and variations can be made within the scope of the technical idea of the present invention, and such modifications or changes belong to the claims of the present invention. something to do.

Claims (2)

A turbo pump connected to the first pipe from the chamber in which the process is performed; In the exhaust system of the semiconductor device manufacturing equipment consisting of a main pump for inducing exhaust gas by connecting to the second pipe from the turbo pump, And at least one control valve for selectively blocking the flow of the exhaust gas guided to the main pump on the second pipe. The method of claim 1, The control valve is an exhaust system of the semiconductor device manufacturing equipment, characterized in that the throttle valve.