TW202307418A - Light detection device and light irradiation device - Google Patents
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- G01J1/00—Photometry, e.g. photographic exposure meter
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- G01J1/04—Optical or mechanical part supplementary adjustable parts
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- G01J1/00—Photometry, e.g. photographic exposure meter
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- G01J1/08—Arrangements of light sources specially adapted for photometry standard sources, also using luminescent or radioactive material
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- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/4257—Photometry, e.g. photographic exposure meter using electric radiation detectors applied to monitoring the characteristics of a beam, e.g. laser beam, headlamp beam
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Abstract
Description
本說明書所揭示之技術係有關檢測被照射之光的技術。The technology disclosed in this specification is related to the detection of irradiated light.
習知為使用一種光加工技術(例如,參照專利文獻1),其藉由雷射光照射等之光照射而對對象物進行加工。 [先前技術文獻] [專利文獻] It is known to use a photoprocessing technique (for example, refer to Patent Document 1) for processing an object by light irradiation such as laser light irradiation. [Prior Art Literature] [Patent Document]
專利文獻1:日本專利特開2006-272430號公報Patent Document 1: Japanese Patent Laid-Open No. 2006-272430
(發明所欲解決之問題)(Problem to be solved by the invention)
如上述經由傳遞構件檢測所照射之光時,其有被檢測的光之光量因在傳遞過程中擴散而大幅度地降低的情形。在此種情形下,因光量不足而會造成光檢測之精度降低。When the irradiated light is detected via the transmission member as described above, the light quantity of the detected light may be greatly reduced due to diffusion during transmission. In this case, the accuracy of light detection is reduced due to insufficient light quantity.
本說明書所揭示之技術係有鑑於以上所記載之問題所完成之技術,其藉由抑制起因於傳遞所引起的光量之減少,用來抑制光檢測精度之降低。 (解決問題之技術手段) The technology disclosed in this specification is a technology completed in view of the problems described above, and suppresses a reduction in light detection accuracy by suppressing a reduction in the amount of light caused by transmission. (technical means to solve the problem)
本說明書所揭示之技術的第一態樣之光檢測裝置,其檢測自光照射部所照射的光,其具備有:傳遞構件,其用來傳遞自上述光照射部所照射的上述光;及光檢測器,其用來檢測藉由上述傳遞構件所傳遞的上述光;在上述傳遞構件中,分散地設置有複數個用來使上述光散射的第一散射部。A photodetection device according to a first aspect of the technology disclosed in this specification, which detects light irradiated from a light irradiation unit, and includes: a transmission member for transmitting the light irradiated from the light irradiation unit; and A light detector is used to detect the light transmitted by the transmission member; in the transmission member, a plurality of first scattering parts for scattering the light are arranged in a dispersed manner.
本說明書所揭示之技術的第二態樣之光檢測裝置,其與第一態樣之光檢測裝置相關,其中,上述光檢測器係位在與上述傳遞構件之長度方向之端部相對向的位置,複數個上述第一散射部係沿上述傳遞構件之長度方向分散地被配置。The photodetection device of the second aspect of the technology disclosed in this specification is related to the photodetection device of the first aspect, wherein the photodetector is located opposite to the end of the transmission member in the longitudinal direction. The plurality of first scattering parts are arranged in a dispersed manner along the longitudinal direction of the transmission member.
本說明書所揭示之技術的第三態樣之光檢測裝置,其與第一或第二態樣之光檢測裝置相關,其中,上述傳遞構件具有與上述光檢測器相對向的端部,複數個上述第一散射部中之一個散射部即第二散射部之寬度,係在第三散射部之寬度以上,而該第三散射部係設於較上述第二散射部更靠近至上述端部之位置的散射部。The photodetection device of the third aspect of the technology disclosed in this specification is related to the photodetection device of the first or second aspect, wherein the transmission member has an end opposite to the photodetector, and a plurality of The width of the second scattering part, which is one of the first scattering parts, is greater than the width of the third scattering part, and the third scattering part is located closer to the above-mentioned end than the second scattering part. position of the scatter section.
本說明書所揭示之技術的第四態樣之光檢測裝置,其與第一至第三中之任一態樣之光檢測裝置相關,其中,更進一步具備有工件台;上述光照射部係將上述光照射至上述工件台之上面,於上述工件台之至少一部分設置有用以使上述光散射的至少一個第四散射部,上述第四散射部係利用透明材料所構成,上述傳遞構件係傳遞經由上述第四散射部所入射的上述光。The photodetection device of the fourth aspect of the technology disclosed in this specification is related to the photodetection device of any one of the first to third aspects, wherein it is further equipped with a work table; the above-mentioned light irradiation part will The above-mentioned light is irradiated on the upper surface of the above-mentioned work table, and at least one fourth scattering part for scattering the above-mentioned light is provided on at least a part of the above-mentioned work table. The light incident on the fourth scattering unit.
本說明書所揭示之技術的第五態樣之光檢測裝置,其與第四態樣之光檢測裝置相關,其中,各上述第一散射部係配置為與上述第四散射部之位置相對應。The photodetection device of the fifth aspect of the technology disclosed in this specification is related to the photodetection device of the fourth aspect, wherein each of the above-mentioned first scattering parts is arranged to correspond to the position of the above-mentioned fourth scattering parts.
本說明書所揭示之技術的第六態樣之光檢測裝置,其與第四或第五態樣之光檢測裝置相關,其中,更進一步具備有:聚光透鏡,其用以對經由上述第四散射部所入射的上述光進行聚光;及遮光板,其位在較上述聚光透鏡遠離自上述第四散射部的位置,且配置於上述聚光透鏡之聚光位置;上述傳遞構件係傳遞藉由上述聚光透鏡所聚光的上述光。 The photodetection device of the sixth aspect of the technology disclosed in this specification is related to the photodetection device of the fourth or fifth aspect, wherein it is further equipped with: a condenser lens, which is used to The above-mentioned light incident by the scattering part is condensed; and the shading plate is located at a position farther from the above-mentioned fourth scattering part than the above-mentioned condensing lens, and is arranged at the light-condensing position of the above-mentioned condensing lens; The above-mentioned light collected by the above-mentioned condensing lens.
本說明書所揭示之技術的第七態樣之光檢測裝置,其與第一至六中之任一態樣之光檢測裝置相關,其中,複數個上述第一散射部係藉由在上述傳遞構件之表面的噴砂加工所形成。The photodetection device of the seventh aspect of the technology disclosed in this specification is related to the photodetection device of any one of the first to sixth aspects, wherein the plurality of first scattering parts are passed through the transmission member Formed by sandblasting on the surface.
本說明書所揭示之技術的第八態樣之光檢測裝置,其與第一至六中之任一態樣之光檢測裝置相關,其中,複數個上述第一散射部係塗佈於上述傳遞構件下面的反射膜。The photodetection device of the eighth aspect of the technology disclosed in this specification is related to the photodetection device of any one of the first to sixth aspects, wherein a plurality of the above-mentioned first scattering parts are coated on the above-mentioned transmission member reflective film below.
本說明書所揭示之技術的第九態樣之光檢測裝置,其與第一至八中之任一態樣之光檢測裝置相關,其中,自上述光照射部所照射的上述光係雷射光。The photodetection device of the ninth aspect of the technology disclosed in this specification is related to the photodetection device of any one of the first to eighth aspects, wherein the light irradiated from the light irradiation part is laser light.
本說明書所揭示之技術的第十態樣之光檢測裝置,其與第一至九中之任一態樣之光檢測裝置相關,其中,更進一步具備內包有上述傳遞構件的腔室;上述光檢測器係在上述腔室之外部檢測藉由上述傳遞構件所傳遞的上述光。The photodetection device of the tenth aspect of the technology disclosed in this specification is related to the photodetection device of any one of the first to ninth aspects, and further includes a chamber containing the above-mentioned transmission member; the above-mentioned The light detector detects the light transmitted by the transmission member outside the chamber.
本說明書所揭示之技術的第十一態樣之光照射裝置,其具備有:至少一個光照射部,其用以照射光;及第一至十中之任一態樣之光檢測裝置。 (對照先前技術之功效) The light irradiation device of the eleventh aspect of the technology disclosed in this specification includes: at least one light irradiation unit for irradiating light; and the light detection device of any one of the first to tenth aspects. (compared to the effect of previous technology)
根據本說明書所揭示之技術的至少第一態樣,藉由抑制光在傳遞構件內傳遞之期間的過度擴散,其可抑制所被傳遞的光之光量減少。結果,可抑制光檢測精度之降低。According to at least the first aspect of the technique disclosed in this specification, by suppressing excessive diffusion of light during transmission in the transmission member, it is possible to suppress reduction in the light quantity of transmitted light. As a result, reduction in light detection accuracy can be suppressed.
此外,藉由以下所示之詳細說明及附加圖式,可更進一步理解本說明書所揭示之技術相關的目的、特徵、狀態及優點。In addition, the purpose, characteristics, conditions, and advantages related to the technology disclosed in this specification can be further understood from the detailed description shown below and the attached drawings.
以下,參照附圖對實施形態進行說明。於以下之實施形態中,雖然為了技術上之說明亦顯示有詳細之特徵等,但是其等為例示性者,其等全部並非為用以使實施形態成為可實施所一定必須之特徵。Embodiments will be described below with reference to the drawings. In the following embodiments, detailed features and the like are shown for technical explanation, but these are illustrative, and all of them are not necessarily essential features for the implementation of the embodiments.
再者,附圖係示意地被顯示,為了便於說明,在圖式中已適當地進行構成之省略或構成之簡化等。此外,在不同圖式中分別顯示之構成等其大小及位置之相互關係未必被正確地記載,而其為可適當地改變者。此外,為了容易理解實施形態之內容,本發明亦具有在並非為剖面圖的俯視圖等之圖式中施加陰影線的情形。In addition, drawings are shown schematically, and for convenience of description, omission of a structure, simplification of a structure, etc. are suitably performed in drawing. In addition, the mutual relationship of the size and position of the structure etc. which are shown separately in a different drawing is not necessarily described correctly, but it can change suitably. In addition, in order to make the content of embodiment easy to understand, this invention may add hatching to drawings, such as a top view which is not a cross-sectional view.
此外,於以下所示之說明中,對相同之構成要素被賦予相同之元件符號來進行圖示,且設為其等之名稱及功能亦相同。因此,為了避免重複,具有省略對其等之詳細說明的情形。In addition, in the following description, the same component is given the same symbol and shown in figure, and it assumes that the name and function of these are also the same. Therefore, in order to avoid repetition, there are cases where detailed descriptions of the same are omitted.
此外,於本說明書所記載之說明中,除非另有說明,否則於將某個構成要素記載為「具備」、「包含」或「具有」等之情形,並非為將其他構成要素之存在排除在外的排他性表現。In addition, in the explanations described in this specification, unless otherwise stated, when a certain constituent element is described as "having", "including" or "having", it does not mean that the existence of other constituent elements is excluded. exclusive performance.
此外,於本說明書所記載之說明中,即使在使用「第一」或「第二」等之序數的情形下,其等用語係為了便於理解實施形態之內容所使用,實施形態之內容並非被限定在藉由其等序數所產生之順序。In addition, in the descriptions described in this specification, even when using ordinal numbers such as "first" or "second", these terms are used to facilitate the understanding of the contents of the embodiments, and the contents of the embodiments are not to be referred to. Restricted to the order produced by its equal ordinal numbers.
此外,於本說明書所記載之說明中,「…軸正方向」或「…軸負方向」等之表現方式,係將沿圖示之…軸之箭頭之方向設為正方向,且將與圖示之…軸之箭頭相反側之方向設為負方向。In addition, in the explanations described in this manual, expressions such as "...the positive direction of the axis" or "the negative direction of the... axis" assume that the direction of the arrow along the ... The direction on the opposite side of the arrow on the ... axis is set as the negative direction.
此外,於本說明書所記載之說明中,即使使用有「上」、「下」、「左」、「右」、「側」、「底」、「表」或「內」等之意味特定位置或方向之用語的情形時,其等用語亦是為了便於理解實施形態之內容所被使用,其與在實際上對實施形態實施時之位置或方向無關。In addition, in the explanations described in this manual, even if the meaning of "upper", "lower", "left", "right", "side", "bottom", "front" or "inner" is used to specify the position In the case of terms of direction or direction, such terms are also used to facilitate the understanding of the content of the embodiment, and have nothing to do with the position or direction when the embodiment is actually implemented.
此外,於本說明書所記載之說明中,於記載為「…之上面」或「…之下面」等之情形下,除了作為對象之構成要素之上面本身或下面本身以外,亦包含於作為對象之構成要素之上面或下面形成有其他構成要素的狀態。亦即,例如,於記載為「於A之上面所設置的B」之情形下,並不妨礙將另一構成要素「C」介在於A與B之間。In addition, in the explanation described in this specification, when it is described as "above" or "underneath", etc., in addition to the above itself or the underside itself as the constituent element of the object, it is also included in the object as the object. A state in which other constituent elements are formed above or below a constituent element. That is, for example, when it is described as "B installed on top of A", it does not prevent another component "C" from being interposed between A and B.
此外,於本說明記載之說明中,顯示形狀的表現,例如「方柱形狀」或「圓柱形狀」等,除非另有說明,否則設為包含嚴謹地顯示該形狀的情形、及在公差或可獲得相同程度之功能的範圍內形成有凹凸或倒角等的情形。In addition, in the explanations described in this specification, expressions showing shapes, such as "square column shape" or "cylindrical shape", etc., are assumed to include the case of strictly showing the shape, and the tolerance or possible A case where unevenness or chamfering is formed within the range of obtaining the same degree of function.
<實施形態> 以下,對與本實施形態相關之光檢測裝置及光照射裝置進行說明。再者,雖然在以下之實施形態中,作為一例,記載有將腔室內設為真空或減壓氣體環境下的光照射裝置,但是於腔室內並非為真空之情形下其亦同樣地可適用。 <Example of implementation> Hereinafter, a photodetection device and a photoirradiation device related to the present embodiment will be described. In addition, although the following embodiment describes as an example the light irradiation apparatus which made the inside of a chamber into a vacuum or a reduced-pressure gas environment, it is applicable also when the inside of a chamber is not a vacuum.
<有關光照射裝置之構成>
圖1為示意地顯示與本實施形態相關之光照射裝置1之構成例的立體圖。於圖1中,為了便於說明,對支撐真空腔室12的腔室框架、或在實際上所連接之配線等之圖示加以省略。再者,為了防止基板W之特性劣化,雖然在本實施形態中所謂「真空」係指期望為高真空(例如,0.00001Pa),但是亦包含未達至該高真空之真空度的情形。
<Construction of light irradiation device>
FIG. 1 is a perspective view schematically showing a configuration example of a
如圖1所例示,光照射裝置1具備:真空腔室12;石材平台等之外部固定部14;波紋管16A,其為一種伸縮性構件,例如利用不鏽鋼等所形成,且連接真空腔室12與外部固定部14;光照射部18,其朝真空腔室12內照射光;真空泵21,其對真空腔室12內進行減壓而形成為真空狀態;及控制部22,其控制光照射裝置1之各個驅動部。於上述構成中,作為伸縮性構件之例子,雖然顯示有利用不鏽鋼等所形成的波紋管,但是對應所要求之規格,亦可採用利用不鏽鋼以外之金屬所形成的伸縮性構件,或者亦可採用利用樹脂等所形成的伸縮性構件。此外,伸縮性構件之形狀亦可並非為如上述波紋管16A之蛇腹形狀。As shown in Figure 1, the
真空腔室12具有於內部收納基板W的空間。作為處理對象的基板W,例如包含半導體晶圓、液晶顯示裝置用玻璃基板、有機EL(electro luminescence)顯示裝置等之平板顯示器(FPD)用基板、光碟用基板、磁碟用基板、磁光碟用基板、光罩用玻璃基板、陶瓷基板、場發射顯示器(field emission display,即FED)用基板、或者太陽能電池用基板等。再者,該基板W例如為在上面形成有薄膜之狀態的基板。The
此外,於真空腔室12之側面形成開口部12A,該開口部12A係於搬入及搬出基板W時用以使基板W通過。當真空腔室12成為真空狀態時,可適當地將開口部12A關閉。有關被收納於真空腔室12內部的其他構成,容待後述。In addition, an opening 12A is formed on a side surface of the
光照射部18係朝被收納於真空腔室12內的基板W之上面照射光。此時,基板W係藉由後述之檢測部等事先被執行位置校正。光照射部18係例如藉由照射雷射光,來進行基板W之燒蝕加工。再者,光照射部18亦可配合加工等之目的例如照射電子束等之光。光照射部18係經由未圖示之照射窗(利用石英等所形成的透明板)自真空腔室12之外部朝收納於真空腔室12內的基板W之上面照射光。並且,藉由使真空腔室12內之基板W相對於光照射部18相對地移動、或者藉由在光照射部18中之光學系統之控制,使光對基板W之上面進行掃描。此外,光照射部18係配置於被固定在外部固定部14的架台24之上面。
The
控制部22係例如可具有包含記憶體(記憶媒體)之記憶裝置、執行程式之中央運算處理裝置(中央處理器即CPU)等之處理電路、可輸入資訊之輸入裝置、及可輸出資訊之輸出裝置,其中,該記憶體係包含硬碟驅動器(hard disk drive,即HDD)、隨機存取記憶體(random access memory,即RAM)、唯讀記憶體(read only memory,即ROM)、快閃記憶體、揮發性或非揮發性之半導體記憶體、磁碟、軟碟、光碟、壓縮光碟(compact disc)、迷你光碟或DVD等,該程式例如存儲於該記憶裝置、外部之CD-ROM、外部之DVD-ROM、或外部之快閃記憶體等,該輸入裝置係滑鼠、鍵盤、觸控面板或各種開關等,該輸出裝置係顯示器、液晶顯示裝置或燈等。The
控制部22係進行在光照射部18中之光源之輸出及照射光之方向的控制、或真空泵21之輸出控制、及後述之各個驅動部之驅動控制等。The
圖2為顯示與本實施形態相關之光照射裝置1之真空腔室12之內部構成及周邊構成之例子的剖面圖。如圖2所例示,於真空腔室12之內部具備:工件台42,其在上面配置基板W;滑塊44,其可於Y軸方向移動,且自下方支撐工件台42;基座46,其獨立於真空腔室12而被固定於外部固定部14;線性導軌48,其被固定於基座46且朝Y軸方向延伸;線性馬達機構50,其使滑塊44朝Y軸方向沿線性導軌48移動;及升降銷機構52,其具有升降銷52A,該升降銷52A係貫通形成於工件台42的貫通孔(在此未圖示)以支撐基板W。FIG. 2 is a cross-sectional view showing an example of the internal configuration and peripheral configuration of the
工件台42係用以將基板W之加工面朝向上方,並且大致水平地保持基板W。有關工件台42之詳細構成,容待後述。藉由線性馬達機構50使支撐工件台42的滑塊44朝Y軸方向移動,且使自光照射部18所照射的光朝X軸方向掃描,藉此可利用光對俯視時之基板W之加工區域全面進行掃描。或者,藉由使自光照射部18所照射的光朝X軸方向及Y軸方向掃描,可利用光對俯視時之基板W之加工區域全面進行掃描。再者,升降銷機構52被固定於基座46。
The
線性馬達機構50係經由形成於真空腔室12側面的開口部12B被固定於位在真空腔室12側面的外部固定部14。更進一步具體而言,線性馬達機構50係被固定於中空之柱狀構件14A的端部,該中空之柱狀構件14A係通過焊接於開口部12B的波紋管16A中。此時,連接於線性馬達機構50的配線等,係穿過柱狀構件14A之內部,被導出至真空腔室12之外部。再者,於外部固定部14所包含的柱狀構件14A,係被固定在外部固定部14所包含的外部構件14B。此外,柱狀構件14A不與連接於真空腔室12之側面的波紋管16A相接觸。The
基座46係經由形成於真空腔室12底面的開口部12C而被固定於位在真空腔室12下方的外部固定部14。具體而言,基座46係固定於柱狀構件14C之端部,該柱狀構件14C係通過焊接於開口部12C的波紋管16B之中。再者,於外部固定部14所包含的柱狀構件14C,係被固定在外部固定部14所包含的外部構件14B。此外,柱狀構件14C不與連接於真空腔室12底面的波紋管16B接觸。The
於圖2中,外部固定部14雖然被配置在遍及至真空腔室12之側面及下方,但是在其等位置之外部固定部14並非一定為連續者,其亦可設置為分散於其等之位置,亦可僅設置於任一之位置。此外,真空腔室12雖然藉由與波紋管16B不同的腔室框架(未圖示)自鉛垂方向下方被支撐且固定,但是該腔室框架係被設置為與外部固定部14互相獨立。In FIG. 2, although the external fixing
圖3為主要顯示在圖2所示構成中光照射部18及工件台42的立體圖。於圖3中,顯示將基板W配置於工件台42上面的狀態。光照射部18可將光之照射方向朝圖3中之X軸方向掃描,且工件台42可藉由線性馬達機構50(參照圖2)朝Y軸方向移動。藉此,自光照射部18所照射至工件台42上面的光,可在基板W之上面形成矩形型之照射區域(光照射區域)。FIG. 3 is a perspective view mainly showing the
如圖3所示,工件台42具備:對象配置區域42A,其配置有藉由光照射部18照射有光的對象即基板W;及位置校正區域42B,其用以校正藉由光照射部18所照射光之位置的區域。As shown in FIG. 3 , the work table 42 includes: an
對象配置區域42A在對象配置區域42A內之特定位置配置基板W。藉此,工件台42與基板W之位置關係被事先確定。於位置校正區域42B中,檢測自光照射部18所照射至位置校正區域42B內的光之位置。並且,於位置校正區域42B中,在對象配置區域42A中對基板W進行光加工處理之前,校正自光照射部18所照射之光的方向之設定值與被檢測之光的照射位置之對應關係。
於位置校正區域42B之至少一部分,設置有使光透過的透光部142。透光部142係利用石英(SiO
2)等之玻璃材料或透明樹脂(例如,矽樹脂)等之透明材料所構成。透光部142係被設置為自與位置校正區域42B相對應的工件台42之上面至下面。自光照射部18被照射至透光部142的光,係自工件台42之上面朝下面透過。
At least a part of the
於透光部142設置有例如4個散射部142A。再者,散射部142A之數量並未被限制於4個。散射部142A係利用透明材料所構成,且使被照射的光一邊散射一邊反射或透過。被設置散射部142A的位置係在工件台42中之特定位置。即,在整個工件台42中之散射部142A的位置係事先被特定。於圖3中,各個散射部142A雖然配置在光照射部18之光照射區域在X軸方向的端部,但是配置散射部142A的位置,只要在工件台42中之特定位置即可,並未被限制於光照射部18之光照射區域的端部。散射部142A具有使入射之光散射的性質,例如可藉由對玻璃材料進行噴砂加工、或使用氟酸等進行磨砂加工而獲得。於圖3中,各個散射部142A雖然形成於透光部142之上面,但是亦可至少一個散射部142A形成於透光部142之下面。For example, four scattering
再者,於圖3所示之情形下,雖然對象配置區域42A與位置校正區域42B被設定在不同之區域,但是其等區域亦可至少一部分重疊。即,亦可在配置基板W的至少一部分區域,設置有透光部142。於此種情形下,例如,亦可在未配置有基板W的狀態下,於配置基板W的既定位置進行自光照射部18照射光的位置之校正。Furthermore, in the situation shown in FIG. 3 , although the
此外,透光部142亦可在其整個範圍形成有散射部142A。亦即,並非僅存在於光所透過的部分,而係在透光部142之整個範圍產生光之散射的情形亦可。In addition, the light-transmitting
此外,於圖3中,透光部142雖然設置為朝X軸方向延伸,且在X軸方向之各個端部設置有散射部142A,但是透光部142亦可於X軸方向上分割為複數個部位。然而,在形成為一體的透光部142中設置有複數個散射部142A的情形下(即,如圖3所示之情形),可在維持利用透明材料製造透光部142時之複數個散射部142A之間之位置精度的狀態下,將透光部142安裝於工件台42 (在圖3之情形下,嵌入)。因此,由於在安裝至工件台42時不會產生散射部142A間之位置偏移,因此可高度維持使用複數個散射部142A進行校正之精度。
In addition, in FIG. 3 , although the light-transmitting
圖4為主要顯示在圖2所示構成中光照射部18及工件台42之構成例的剖面圖。如圖4所示,光照射部18具備:掃描器18A,其為電流鏡(galvano mirror)或多角鏡(Polygon mirror)等,用以將所照射之光的方向控制在X軸方向及Y軸方向;及聚光透鏡18B,其對來自未圖示之光源的光進行聚光。於圖4中,經由聚光透鏡18B並經由利用石英等所形成之照射窗20所照射的光,例如為雷射光18C。雷射光18C係可藉由掃描器18A之控制,於X軸方向及Y軸方向對配置於工件台42上面的基板W進行掃描。在此,光照射部18雖然較佳為可在X軸方向及Y軸方向控制光,但是光照射部18亦可在X軸方向或Y軸方向之任一方向控制光。FIG. 4 is a cross-sectional view mainly showing a configuration example of the
工件台42具備:透光部142,其形成在位置校正區域42B(參照圖3);及散射部142A,其形成於透光部142之上面。自光照射部18所照射的雷射光18C,可對在X軸方向上至少到達至散射部142A的範圍進行掃描。The work table 42 includes: a light-transmitting
於工件台42之下方配置有用以檢測光的檢測部62。檢測部62具備:聚光單元62A,其在真空腔室12內對光進行聚光;透明桿62D,其傳遞被聚光單元62A所聚光的光;散射部166,其在透明桿62D於X軸方向分散地設置有複數個;光纖62B,其使在透明桿62D內傳遞的光自透明桿62D射出;聚光透鏡62E,其對自光纖62B所射出的光進行聚光;及光檢測器62C,其在真空腔室12外側經由被設於真空腔室12之框體的透明窗20A,檢測藉由聚光透鏡62E所聚光的光。藉由具備透明桿62D及光檢測器62C,可構成光檢測裝置。The
於複數個散射部166,其包含沿Y軸方向延伸所形成的散射部166A、及沿Y軸方向且較散射部166A更長地延伸所形成的散射部166B。於圖4中,於靠近至光檢測器62C的位置配置有2個散射部166A,且於遠離自光檢測器62C的位置配置有2個散射部166B。The plurality of scattering
於圖4中,連續地排列有2個散射部166A,並且連續地排列有2個散射部166B。即,散射部166之Y軸方向之寬度,係自靠近至光檢測器62C側起呈階段性地(不連續地)變寬。然而,例如,亦可於遠離自光檢測器62C的方向來排列4個Y軸方向之寬度各不相同的散射部166,且其等之Y軸方向之寬度則配合自光檢測器62C的距離而連續地變寬。換言之,只要遠離自光檢測器62C之位置的散射部166之寬度係在靠近至光檢測器62C之位置的散射部166之寬度以上即可。In FIG. 4 , two scattering
此外,圖4所示之散射部166雖然朝Y軸方向(紙面內側方向)延伸所形成,但是散射部166亦可朝X軸方向(紙面左右方向)延伸所形成,且靠近至光檢測器62C之位置的散射部166之X軸方向的寬度係遠離自光檢測器62C之位置的散射部166之X軸方向的寬度以上即可。換言之,若將連結散射部166與光檢測器62C之方向設為第一方向,則散射部166因應於自光檢測器62C之距離所變化的寬度,係可為在第一方向之寬度,或在與第一方向正交之方向之寬度均可。In addition, although the
圖5為顯示散射部166A之形成寬度例子的圖。圖6為顯示散射部166B之形成寬度例子的圖。如圖5所例示,於透明桿62D為圓柱形之情形下,散射部166A係沿透明桿62D之圓周方向延伸所形成。此外,如圖6所例示,於透明桿62D為圓柱形之情形下,散射部166B亦沿透明桿62D之圓周方向延伸所形成。在此,由於散射部166B在Y軸方向之寬度大於散射部166A之寬度,因此,圓周方向之長度亦變長。FIG. 5 is a diagram showing an example of the formation width of the
圖4之透明窗20A,例如,可利用玻璃材料或透明樹脂等之透明材料所構成。The
由於圖4之光檢測器62C係配置於真空腔室12外,因此可抑制自光檢測器62C所釋放的氣體進入至真空腔室12內。Since the
圖7及圖8為顯示在檢測部中之聚光單元62A及透明桿62D的示意圖。如圖7及圖8所例示,聚光單元62A具備:聚光透鏡162,其在自圖4之光照射部18所入射的光之光軸上對該光進行聚光;及遮光板164,其在自光照射部18所入射的光之光軸上較聚光透鏡162配置在光之路徑的下游(即,在圖7及圖8中之Z軸負方向側)。遮光板164係遮蔽入射之光的板狀構件,且配置在較聚光透鏡162遠離自透光部142之位置的聚光透鏡162之聚光位置。7 and 8 are schematic diagrams showing the
此外,如圖7及圖8所例示,透明桿62D係利用石英(SiO
2)等之玻璃材料或透明樹脂(例如,矽樹脂)等之透明材料所構成。此外,透明桿62D,例如為圓柱形之桿構件,且在沿圖4之工件台42之表面的平面(即XY平面)延伸所形成。若透明桿62D為圓柱形狀,則在聚光單元62A中被聚光的光入射至透明桿62D的情形下,容易在透明桿62D內滿足全反射條件,且可有效地傳遞該光。惟,透明桿62D之形狀並未被限制於圓柱形狀,例如亦可為方柱形狀。此外,於本實施形態中,雖然顯示透明桿62D為桿形狀之情形,但是透明桿62D例如亦可為與工件台42全面對應的面形狀等。
In addition, as shown in FIGS. 7 and 8 , the
透明桿62D係在Z軸方向上,以聚光透鏡162作為基準,配置在與散射部142A之共軛位置。The
此外,只要透明桿62D配置在俯視時至少與散射部142A重疊之範圍(例如,在俯視時包含散射部142A之範圍)內即可。若為如此之配置,則利用散射部142A散射且在聚光單元62A被聚光的光,可有效地入射至透明桿62D並被傳遞。In addition, the
此外,於透明桿62D之下面設置有複數個散射部166。各散射部166係使被照射的光一邊散射一邊反射或透過。各散射部166例如藉由對玻璃材料進行噴砂加工、或使用氟酸等進行磨砂加工而被獲得。In addition, a plurality of scattering
各散射部166係配置在俯視時即自光之入射方向所觀察時至少與散射部142A重疊之範圍(例如,在俯視時包含散射部142A之範圍)。再者,各散射部166亦可被設於透明桿62D之內部或上面等。Each scattering
於圖7所示之情形下,自光照射部18(參照圖4)所入射的雷射光18C(平行光),僅通過在工件台42中之透光部142而到達至聚光單元62A。另一方面,於圖8所示之情形下,自光照射部18(參照圖4)所入射的雷射光18C,通過在工件台42中之散射部142A及透光部142而到達至聚光單元62A。再者,於圖8中,雖然雷射光18C通過散射部142A及透光部142,但是雷射光18C亦可僅通過散射部142A。In the situation shown in FIG. 7 , the
於圖7所示之情形下,通過散射部142A以外之透光部142的雷射光18C,在光之照射範圍及方向無顯著變化下到達至聚光單元62A。然後,雷射光18C係藉由在聚光單元62A中之聚光透鏡162被聚光,並入射至配置在聚光透鏡162之聚光位置的遮光板164。然後,由於光被遮光板164所遮擋,因此,雷射光18C則未到達至沿雷射光18C之光軸的光之路徑而位於較遮光板164更下游的透明桿62D。In the situation shown in FIG. 7 , the
另一方面,於圖8所示之情形下,通過在透光部142中之散射部142A的雷射光18C,當通過散射部142A時則產生光之散射。於是,在雷射光18C之照射範圍因散射光(在圖8中之砂點部分)被擴大的狀態下,雷射光18C到達至聚光單元62A。然後,雷射光18C藉由在聚光單元62A中之聚光透鏡162而被聚光。On the other hand, in the case shown in FIG. 8 , the
此時,在散射部142A中因光的散射而使照射範圍擴大的雷射光18C,則包含有大量並非平行光的成分,且至少一部分成分不被聚光於聚光透鏡162之聚光位置。因此,被配置於聚光透鏡162之聚光位置的遮光板164,僅將雷射光18C之一部分遮蔽。換言之,未被遮光板164所遮蔽之一部分雷射光18C,即雷射光18C之散射光,則到達至沿雷射光18C之光軸的光之路徑中位於較遮光板164更下游的透明桿62D。At this time, the
然後,入射至透明桿62D內的雷射光18C,則在散射部166產生光之散射。散射之雷射光18C之一部分,在透明桿62D內反射及傳遞,且到達至連接於透明桿62D之端部的光纖62B。Then, the
如上述,被照射至工件台42上面的雷射光18C,係在進入至透光部142中之形成有散射部142A之部位的情形下,於聚光單元62A被聚光之後到達至透明桿62D。然後,到達至透明桿62D之光,係在透明桿62D內並進而在被連接至透明桿62D之端部的光纖62B內傳遞之後,被聚光透鏡62E所聚光,且在光檢測器62C被檢測。藉此,在雷射光18C被照射至散射部142A的情形下,檢測部62可檢測雷射光18C之散射光,因此使此時之掃描器18A(參照圖4)之設定值與散射部142A之位置相對應之方式,則可校正所照射之光之位置。藉此,當在之後的步驟中對配置於工件台42上面的基板W進行光加工時,則可以高精度對自光照射部18(參照圖4)所照射的光之位置進行位置校正。As mentioned above, the
此外,由於利用光照射部18(參照圖4)照射光的透光部142及透明桿62D,係被利用透明材料所構成,因此,即使在為了校正因光照射部18(參照圖4)所被照射的光之位置而重複地對透光部142及透明桿62D照射相對較高強度之光時,亦可抑制因校正而被照射光的標的(即,透光部142及透明桿62D)之損傷。In addition, since the light-transmitting
此外,由於在檢測部62中所被檢測的光係散射光,而並非不散射而透過透光部142的透過光,因此其與直接檢測未散射之透過光的情形相比較,則可抑制在檢測部62中起因於該光的損傷。In addition, since the light detected in the
圖9為顯示在透明桿62D中光之傳遞狀態的圖。如圖9所示,自光照射部18(參照圖4)所入射的雷射光18C在透明桿62D內被傳遞,且到達至透明桿62D之端部。然後,該光係在與透明桿62D之長度方向(X軸方向)之端部連接的光纖62B內傳遞之後,被聚光透鏡62E(參照圖4)所聚光。然後,該光經由聚光透鏡62E而在與透明桿62D之端部相對向的光檢測器62C(參照圖4)被檢測。FIG. 9 is a diagram showing the state of transmission of light in the
如圖9所示,因對應於雷射光18C所入射之位置形成有散射部166B,而入射至透明桿62D的雷射光18C,不透過透明桿62D而在散射部166B散射,使得容易在透明桿62D傳遞。As shown in FIG. 9 , since the
此外,由於散射部166A及散射部166B係分散地設置在透明桿62D下面之長度方向(X軸方向),因此其與將散射部例如設於整個透明桿62D下面之情形相比較,在透明桿62D內傳遞的雷射光18C則在傳遞中散射的機會減少。因此,雷射光18C一邊在滿足全反射條件之同時一邊可容易在透明桿62D內傳遞,其結果,可抑制在光檢測器62C中所被檢測的雷射光18C光量的減少。In addition, since the
圖10為顯示在透明桿62D中光之傳遞狀態的圖。於圖10中,入射至透明桿62D的雷射光18C之入射位置,相較於圖9之情形則靠近至被連接於光檢測器62C(參照圖4)的光纖62B的位置。FIG. 10 is a diagram showing the state of transmission of light in the
如圖10所例示,與雷射光18C所入射之位置相對應,形成散射部166A,藉此入射至透明桿62D的雷射光18C,不透過透明桿62D而在散射部166A散射,因此可容易在透明桿62D傳遞。As shown in FIG. 10 , the scattering
在此,散射部166B之Y軸方向的寬度,係大於散射部166A之Y軸方向的寬度。藉此,相較於如圖10所示入射至與散射部166A相對應之位置的雷射光18C,如圖9所示入射至與散射部166B相對應之位置的雷射光18C則入射至所對應之散射部166的比率變高,而可在散射部166散射並容易在透明桿62D內傳遞。即,由於入射至遠離自光檢測器62C(參照圖4)之位置的雷射光18C,較入射至靠近至光檢測器62C之位置的雷射光18C,更容易在所對應之散射部166進行散射,因此可以高光量且容易在透明桿62D內傳遞。
Here, the width of the
如此,即使當入射至遠離自光檢測器62C(參照圖4)之位置的雷射光18C之光量因在透明桿62D內傳遞之期間的散射等而降低時,在入射至靠近光檢測器62C位置的雷射光18C與入射至遠離自光檢測器62C位置的雷射光18C之間,則較不會使光檢測器62C中所檢測之光量產生差異。藉此,由於其可不考慮雷射光18C所入射之位置來設定所檢測之光量的臨限值(用以與雜訊區分的值)等,因此可有效地對去除有雜訊所傳遞而來的雷射光18C進行檢測。其結果,則可提高光之檢測精度。In this way, even when the light quantity of the
設於透明桿62D的散射部,並不被限定於透明桿62D之表面被加工所形成的散射部,例如,亦可為在透明桿62D之下面塗佈發揮作為散射部之功能的反射膜的情形。The scattering portion provided on the
若為如散射部166般透明材料被加工的構成,則較不會產生因光之照射所引起之損傷,且可抑制在真空(或減壓)下成為問題的釋放氣體(outgas),另一方面,若為設置金屬膜等即反射膜作為散射部的情形,則可提高入射至透明桿62D內的光之反射率,因此可提高該光之傳遞效率。If it is a structure in which a transparent material is processed like the
圖11為示意地顯示透明桿162D之構成例的剖面圖。如圖11所示,於透明桿162D之下面塗佈有作為散射部的反射膜168。反射膜168例如為利用氧化鋁(alumina)等所構成的金屬膜。FIG. 11 is a cross-sectional view schematically showing a configuration example of the
在將反射膜168設於該部位的情形下,光係藉由反射膜168進行全反射之後,在透明桿162D內被傳遞。When the
<有關藉由以上所記載之實施形態所產生的效果> 接著,顯示藉由以上所記載之實施形態所產生的效果之例子。再者,在以下之說明中,雖根據以上所記載之實施形態所例示之具體構成中已記載其效果,但是在產生相同效果之範圍內,本說明書中所例示者亦可被置換以其他具體構成。即,以下為了便於說明,雖然具有僅代表性記載對應具體構成中任一者的情形,但是亦可將代表性記載具體構成置換為相對應之其他具體構成。 <About the effects produced by the embodiments described above> Next, an example of the effect produced by the embodiment described above will be shown. Furthermore, in the following description, although the effect has been described in the specific structure exemplified according to the embodiment described above, within the scope of producing the same effect, the exemplified in this specification can also be replaced with other specific configurations. constitute. That is, in the following, for convenience of description, only any one of the corresponding specific configurations is representatively described, but the representative specific configurations may be replaced with other corresponding specific configurations.
根據以上所記載之實施形態,光檢測裝置具有傳遞構件及光檢測器62C。在此,傳遞構件例如為與透明桿62D及透明桿162D等中至少一者相對應者。透明桿62D係用以傳遞自光照射部18所照射的光。光檢測器62C係檢測藉由透明桿62D所被傳遞的光。並且,於透明桿62D分散地設置複數個用以使光散射的第一散射部。在此,第一散射部例如為與散射部166、散射部166A及散射部166B等中之至少一者相對應者。According to the embodiment described above, the photodetection device has the transmission member and the
根據如此之構成,藉由抑制雷射光18C在透明桿62D內傳遞期間之過度擴散,則可抑制所被傳遞的雷射光18C之光量的減少。其結果,可抑制光檢測精度之降低。According to such a configuration, by suppressing excessive diffusion during transmission of the
再者,當適當地追加在本說明書中所例示之其他構成至上述構成時,換言之即使在適當追加在上述構成中所未提及之本說明書中之其他構成時,其亦可產生同樣之效果。Furthermore, when other configurations exemplified in this specification are appropriately added to the above-mentioned configurations, in other words, even when other configurations in this specification that are not mentioned in the above-mentioned configurations are appropriately added, the same effect can be produced. .
此外,根據以上所記載之實施形態,光檢測器62C係位於與透明桿62D之長度方向之端部相對向的位置。並且,複數個散射部166係沿透明桿62D之長度方向分散地被配置。根據此種構成,則可沿透明桿62D之長度方向有效地傳遞光。Moreover, according to the embodiment described above, the
此外,根據以上所記載之實施形態,透明桿62D具有與光檢測器62C相對向的端部。並且,複數個散射部166中之一個散射部即第二散射部的寬度為第三散射部之寬度以上,該第三散射部係設於較第二散射部靠近至端部位置的散射部。在此,第二散射部例如相對應於散射部166B。此外,第三散射部例如相對應於散射部166A。根據如此之構成,由於將對應於在透明桿62D內之傳遞距離所產生之雷射光18C的光量減少加以相抵,因此其與藉由傳遞距離變短之位置的散射部166A所散射的光量相比較,可相對地增加藉由傳遞距離變長之位置的散射部166B所散射的光量,因此可抑制自不同之入射位置在透明桿62D內傳遞而所被檢測的光之光量差。其結果,可提高光之檢測精度。In addition, according to the embodiment described above, the
此外,根據以上所記載之實施形態,光檢測裝置具備工件台42。並且,光照射部18係將光照射至工件台42之上面。此外,於工件台42之至少一部分設置有用以使光散射之至少一個第四散射部。在此,第四散射部例如相對應於散射部142A。此外,散射部142A係利用透明材料所構成。此外,透明桿62D係傳遞經由散射部142A所入射的光。根據如此之構成,由於照射有光的散射部142A係利用透明材料所構成,因此即使在照射雷射光18C等之高強度光的情形下,亦可減少照射光之部位的損傷。因此,其難以降低藉由檢測部62所檢測之光的位置精度。此外,藉由檢測在散射部142A所散射的散射光,即使在檢測雷射光18C等之高強度光的情形下,亦可減輕起因於直接照射光所引起的檢測部62之損傷。In addition, according to the embodiment described above, the photodetection device includes the work table 42 . In addition, the
此外,根據以上所記載之實施形態,各散射部166係配置為與散射部142A之位置相對應。根據如此之構成,由於可使在散射部142A被散射且入射至透明桿62D的光更進一步在位於其正下方的散射部142A被散射,因此可有效地在透明桿62D內傳遞該光。
In addition, according to the embodiment described above, each scattering
此外,根據以上所記載之實施形態,光檢測裝置具備聚光透鏡162及遮光板164。聚光透鏡162係對經由散射部142A所入射的光進行聚光。遮光板164係配置在較聚光透鏡162遠離自散射部142A之位置。此外,遮光板164係配置在聚光透鏡162之聚光位置。並且,透明桿62D係傳遞藉由聚光透鏡162所被聚光的光。根據如此之構成,一邊以遮光板164遮蔽透過光一邊以光檢測器62C檢測在散射部142A所散射的散射光,即使在檢測雷射光18C等之高強度光的情形下,亦可減輕起因於直接照射光所引起的檢測部62之損傷。Furthermore, according to the embodiment described above, the photodetection device includes the condensing
此外,根據以上所記載之實施形態,複數個散射部166係藉由在透明桿62D之表面進行噴砂加工而形成。根據如此之構成,可形成不易產生因光之照射所引起之損傷且可抑制在真空(或者減壓)下成為問題之釋放氣體的散射部。In addition, according to the embodiment described above, the plurality of scattering
此外,根據以上所記載之實施形態,複數個第一散射部係塗佈於透明桿162D下面的反射膜168。根據如此之構成,利用在下面分散地所設置之反射膜168來提高在透明桿62D下面的反射率,可抑制光傳遞中的過度擴散,提高入射至透明桿62D內的光之傳遞效率。In addition, according to the embodiment described above, the plurality of first scattering parts are coated on the
此外,根據以上所記載之實施形態,自光照射部18所照射的光係雷射光18C。根據如此之構成,即使在照射如雷射光18C之高強度光的情形下,亦可藉由抑制傳遞中的過度擴散來抑制所傳遞的光量之減少。In addition, according to the embodiment described above, the
此外,根據以上所記載之實施形態,光檢測裝置具備內包有透明桿62D的腔室。在此,上述腔室例如對應於真空腔室12。並且,光檢測器62C係在真空腔室12之外部檢測藉由透明桿62D所傳遞的光。根據如此之構成,由於檢測部62中之光檢測器62C設於真空腔室12之外部,因此可抑制在真空腔室12內產生自光檢測器62C所釋放的釋放氣體。
In addition, according to the embodiment described above, the photodetection device includes a chamber in which the
<有關以上所記載之實施形態之變形例> 在以上所記載之實施形態中,雖然具有亦對各個構成要素之材質、材料、尺寸、形狀、相對之配置關係或實施條件等予以記載的情形,但是其等僅為一例而已,並非為限定性者。 <Modification of the embodiment described above> In the embodiments described above, although there are cases where the material, material, size, shape, relative arrangement relationship, and implementation conditions of each component are also described, these are only examples and are not intended to be limiting. By.
因此,未例示之無數個變形例及同等者,均被納入於本說明書所揭示之技術範圍內。例如,當對至少一個構成要素作變形時,其亦包含有追加之情形或省略之情形。Therefore, countless modifications and equivalents that are not illustrated are included in the technical scope disclosed in this specification. For example, when at least one component is modified, addition or omission is also included.
此外,在以上所記載之實施形態中,特別是在未指定之方式記載有材料名稱等的情形下,只要不產生矛盾,該等材料應亦包含其他之添加物,例如合金等。In addition, in the embodiments described above, especially when the names of materials and the like are described in an unspecified manner, these materials should also include other additives, such as alloys, as long as there is no contradiction.
1:光照射裝置
12:真空腔室
12A、12B、12C:開口部
14:外部固定部
14A、14C:柱狀構件
14B:外部構件
16A、16B:波紋管
18:光照射部
18A:掃描器
18B、62E、162:聚光透鏡
18C:雷射光
20:照射窗
20A:透明窗
21:真空泵
22:控制部
24:架台
42:工件台
42A:對象配置區域
42B:位置校正區域
44:滑塊
46:基座
48:線性導軌
50:線性馬達機構
52:升降銷機構
52A:升降銷
62:檢測部
62A:聚光單元
62B:光纖
62C:光檢測器
62D、162D:透明桿
142:透光部
142A、166、166A、166B:散射部
164:遮光板
168:反射膜
W:基板
1: Light irradiation device
12:
圖1係示意地顯示與實施形態相關之光照射裝置之構成例的立體圖。 圖2係顯示與實施形態相關之光照射裝置的真空腔室之內部構成及周邊構成之例子的剖面圖。 圖3係主要顯示在圖2所例示之構成中的光照射部及工件台的立體圖。 圖4係主要顯示在圖2所例示之構成中的光照射部及工件台之構成之例子的剖面圖。 圖5係顯示散射部之形成寬度之例子的圖。 圖6係顯示散射部之形成寬度之例子的圖。 圖7係顯示在檢測部中之聚光單元及透明桿的示意圖。 圖8係顯示在檢測部中之聚光單元及透明桿的示意圖。 圖9係顯示在透明桿中之光之傳遞狀態的圖。 圖10係顯示在透明桿中之光之傳遞狀態的圖。 圖11係示意地顯示透明桿之構成例的剖面圖。 FIG. 1 is a perspective view schematically showing a configuration example of a light irradiation device according to the embodiment. Fig. 2 is a cross-sectional view showing an example of the internal configuration and peripheral configuration of a vacuum chamber of the light irradiation device according to the embodiment. FIG. 3 is a perspective view mainly showing a light irradiation unit and a work table in the configuration illustrated in FIG. 2 . FIG. 4 is a cross-sectional view mainly showing an example of the configuration of the light irradiation unit and the work table in the configuration illustrated in FIG. 2 . FIG. 5 is a diagram showing an example of a formation width of a scattering portion. FIG. 6 is a diagram showing an example of a formation width of a scattering portion. Fig. 7 is a schematic diagram showing the light collecting unit and the transparent rod in the detection part. Fig. 8 is a schematic diagram showing the light collecting unit and the transparent rod in the detection part. Fig. 9 is a diagram showing the state of transmission of light in a transparent rod. Fig. 10 is a diagram showing the state of transmission of light in a transparent rod. Fig. 11 is a cross-sectional view schematically showing a configuration example of a transparent rod.
12:真空腔室 12: Vacuum chamber
18:光照射部 18: Light irradiation department
18A:掃描器 18A: Scanner
18B:聚光透鏡 18B: condenser lens
18C:雷射光 18C: laser light
20:照射窗 20: Irradiation window
20A:透明窗 20A: transparent window
42:工件台 42:Workpiece table
62:檢測部 62: Detection Department
62A:聚光單元 62A: Concentrating unit
62B:光纖 62B: Optical fiber
62C:光檢測器 62C: Photodetector
62D、162D:透明桿 62D, 162D: transparent rod
62E:聚光透鏡 62E: condenser lens
142:透光部 142: Translucent part
142A、166、166A、166B:散射部 142A, 166, 166A, 166B: scattering part
W:基板 W: Substrate
Claims (11)
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JP2021-126460 | 2021-08-02 | ||
JP2021126460A JP2023021536A (en) | 2021-08-02 | 2021-08-02 | Light detection device and light irradiation device |
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Publication Number | Publication Date |
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TW202307418A true TW202307418A (en) | 2023-02-16 |
TWI818543B TWI818543B (en) | 2023-10-11 |
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TW111117949A TWI818543B (en) | 2021-08-02 | 2022-05-13 | Light detection device and light irradiation device |
Country Status (4)
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JP (1) | JP2023021536A (en) |
KR (1) | KR20230019779A (en) |
CN (1) | CN115701527A (en) |
TW (1) | TWI818543B (en) |
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JPH11505928A (en) * | 1995-05-26 | 1999-05-25 | オプティカル アナリティック インコーポレイテッド | Wide-angle scattered light detector |
JP2006272430A (en) | 2005-03-30 | 2006-10-12 | Seiko Epson Corp | Laser beam machining apparatus |
TW200819794A (en) * | 2006-10-27 | 2008-05-01 | Radiant Opto Electronics Corp | Structure of light guide plate |
JP2015102796A (en) * | 2013-11-27 | 2015-06-04 | セイコーエプソン株式会社 | Optical branching device |
CN203746193U (en) * | 2013-12-31 | 2014-07-30 | 奇菱科技股份有限公司 | Light sensing device and strain control system |
CN105911025B (en) * | 2016-06-27 | 2018-10-23 | 武汉理工大学 | A kind of distribution helical-core fiber surface plasma resonance sensor and its measurement method |
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TWI818543B (en) | 2023-10-11 |
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