TW202303799A - Die bonding device and method for manufacturing semiconductor device - Google Patents

Abstract

To provide a die bonding device that attaches dies to a substrate on which marks are not made with good positioning accuracy. A die bonding device comprises a control unit that controls a bond head that places dies on a top face of a circular transparent substrate and an imaging apparatus. The control unit recognizes and measures a plurality of edges in an initial state of the substrate with the imaging apparatus, calculates an initial center position and the initial size of the substrate based on the measured positions, divides the substrate into a plurality of areas on the circumference, after a predetermined period, recognizes and measures the plurality of edges with the imaging apparatus for every area of the substrate, calculates a displacement center position and a displacement size of the substrate in every division area based on the measured positions, and based on the initial center position and initial size and the displacement center position and displacement size, calculates the amount of displacement between the coordinates of an outer periphery of the substrate after the predetermined period and the coordinates of the outer periphery of the substrate in the initial state.

Description

Die bonding device and method for manufacturing semiconductor device

The present invention relates to a die bonding device, for example, a die bonding device that can be applied to a substrate for fan-out wafer level packaging for placing die.

Fan Out Wafer Level Package (FOWLP) is a package in which a redistribution layer is formed in a wide area exceeding the chip area. For example, FOWLP uses a wafer with a diameter of 300mm or a circular panel (wafer panel) of a glass substrate to mount many silicon chips, and implements package manufacturing in an integrated manner to reduce the manufacturing cost of each package. FOWLP panels use Si substrates or glass substrates. On the other hand, FOPLP (Fan Out Panel Level Package) is an application of this integrated manufacturing concept to a rectangular panel (panel-shaped substrate) larger than a wafer. For the panel of FOPLP, a printed circuit board or a glass substrate (for example, a substrate for liquid crystal panel production, etc.) is used.

As the process of FOWLP and FOPLP, for example, on a panel (hereinafter also referred to as a substrate) as a temporary substrate, the die picked up from the wafer is temporarily fixed by bonding with an adhesive base agent coated on the substrate. , A method of integrally sealing with a sealing resin, peeling off the sealing body from the substrate, and performing rewiring and pad (PAD) formation. In this method, in order to maintain the yield and quality, it is necessary to mount the die with high precision on the remaining substrate. [Prior Art Literature] [Patent Document]

[Patent Document 1] Japanese Patent Laid-Open No. 2018-133353

[Problem to be Solved by the Invention]

Aiming at high-precision manufacturing equipment, it is considered to place marks on the substrate as a reference for pre-positioning, etc., and perform calibration. However, when the target mark is formed by processing the substrate, there may be situations where the dimensions of the manufactured parts change, etc. In addition to being difficult to reuse the substrate (as a mold), it is costly to form alignment marks on the substrate with high precision, and an increase in the cost of the substrate leads to an increase in package price. Therefore, it is necessary to mount the die with high precision on a plain substrate without marks, and the manufacturing equipment becomes expensive. In order to reduce the cost of FOWLP and FOPLP, it is necessary to realize a manufacturing device that can be mounted with high precision and at low cost.

The subject of this invention is providing the die bonding apparatus which mounts a semiconductor wafer (die) on the board|substrate to which a mark is not given with high positioning accuracy. [Means to solve the problem]

Briefly explaining the outline of representative ones of the present invention, it is as follows. That is, the die bonding apparatus is equipped with the control device which controls the bonding head which controls a die to be mounted on the upper surface of a transparent circular board|substrate, and controls an imaging device. The control device uses the camera device to identify and measure the multiple edges of the initial state of the aforementioned substrate, and calculates the initial center position and initial size of the substrate based on the measured position, and divides the substrate into multiple areas on the circumference. After a period of time, corresponding to each area of the substrate, the multiple edges are identified and measured by the camera device, and the displacement center position and displacement size of the substrate in each area are calculated according to the measured position, and based on the initial center position and initial size, and The position of the center of displacement and the magnitude of the displacement are calculated in such a way that the coordinates of the outer periphery of the substrate after a predetermined period of time and the displacement amount of the coordinates of the outer periphery of the substrate in the initial state are calculated. [Effect of the invention]

According to the aforementioned die bonding device, the precision of die placement can be improved.

Embodiments and modified examples are described below using drawings. However, in the following description, the same reference numerals are attached to the same constituent elements, and overlapping descriptions may be omitted. In addition, in order to clarify the description, the drawings show a schematic representation of the width, thickness, shape, etc. of each part rather than the actual state, but they are only examples and do not limit the interpreter of the present invention.

FIG. 1 is a schematic plan view showing a flip chip bonding machine according to an embodiment. FIG. 2 is a diagram illustrating the actions of the pickup inverting head, the transposing head, and the bonding head when viewed from the direction of arrow A in FIG. 1 .

A flip chip bonding machine 10 as a die bonding device roughly includes a die supply unit 1, a pick-up unit 2, a transposition unit 8, an intermediate table unit 3, a bonding unit 4, a transport unit 5, a substrate supply unit 6K, and a substrate supply unit 6K. The unloading unit 6H and the control device 7 monitors and controls the operation of each unit.

First, the die supply unit 1 supplies the die D mounted on the substrate P. As shown in FIG. The die supply unit 1 includes a wafer holding table 12 containing divided wafers 11 , a push-up unit 13 indicated by a dotted line that pushes a die D upward from the wafer 11 , and a wafer ring supply unit 18 . The die supply unit 1 moves in the X-axis and Y-axis directions by a driving means not shown, and moves the picked-up die D to the position of the push-up unit 13 . The wafer ring supply unit 18 has a cassette for accommodating wafer rings 14 (see FIG. 3 ), and sequentially supplies the wafer rings 14 to the die supply unit 1 and replaces them with new wafer rings 14 . The die supply unit 1 moves the wafer ring 14 to a pick-up point so that a desired die D can be picked up from the wafer ring 14 . The wafer ring 14 is a jig that fixes the wafer 11 and can be mounted on the die supply unit 1 .

The pick-up unit 2 has a pick-up and inversion head 21 for picking up and inverting the die D, and driving units (not shown) for lifting, rotating, reversing and moving the suction nozzle 22 in the Y-axis direction. With this structure, the pick-up and inversion head 21 picks up the die D, rotates the pick-up and inversion head 21 by 180 degrees, turns the protrusion of the die D to face downward, and becomes a posture of delivering the die D to the transposition head 81 .

The transposition unit 8 receives the inverted die D from the pick-up and inversion head 21 and places it on the intermediate table 31 . The transposition unit 8 includes a transposition head 81 including a suction nozzle 82 that sucks and holds the die D at the tip similar to the pick-up and inversion head 21 , and a Y drive unit 83 that moves the transposition head 81 in the Y-axis direction.

The intermediate stage unit 3 has an intermediate stage 31 on which the die D is temporarily placed, and a stage recognition camera 34 . The intermediate table 31 is movable in the Y-axis direction by a driving unit not shown.

The bonding unit 4 picks up the die D from the intermediate stage 31 and bonds it to the substrate P conveyed. Here, as the substrate P, a glass panel that is a transparent circular substrate is used. The bonding unit 4 has a bonding head 41 including a suction nozzle 42 that absorbs and holds the die D at the front end similarly to the pick-up and inverting head 21, a Y beam 43 as a drive unit that moves the bonding head 41 in the Y-axis direction, and an imaging substrate P. The substrate recognition camera 44 and the bonding table 46 that recognize the bonding position. The X-beam 45 is arranged near the transport rails 51 and 52, the Y-beam 43 extends in the Y-axis direction across the joint table 46, and the two ends are free to move in the X-axis direction by the X-beam 45 way is supported.

The bonding head 41 is a device having a suction nozzle 42 that can detachably hold the die D by vacuum suction, and is attached to the Y beam 43 so as to be able to reciprocate freely in the Y-axis direction, that is, the Z-axis direction. The mounting head 41 has a function of holding and transporting the die D picked up from the intermediate table 31 and mounting the die D on the substrate P adsorbed and fixed on the bonding table 46 . Furthermore, when the bonding head 41 moves toward the intermediate table 31 side rather than the X-beam 45, the bonding head 41 will rise so that the suction nozzle 42 may become higher than the X-beam 45. FIG.

With such a structure, the bonding head 41 picks up the die D from the intermediate table 31 , and bonds the die D to the substrate P according to the imaging data of the substrate recognition camera 44 .

The transport unit 5 includes transport rails 51 and 52 on which the substrate transport jig WC holding the substrate P moves in the X-axis direction. The conveyance rails 51 and 52 are provided in parallel. With this structure, the substrate P is unloaded from the substrate supply unit 6K, moved to the joining position along the transport rails 51, 52, moved to the substrate carry-out unit 6H after joining, and delivered to the substrate carry-out unit 6H. The die D is bonded to the substrate P, and the substrate supply unit 6K unloads the substrate P again, and waits on the transfer rails 51 and 52 .

The control device 7 includes a memory storing a program (software) for monitoring and controlling the operation of each part of the flip chip bonding machine 10, and a central processing unit (CPU) for executing the program stored in the memory. For example, the control device 7 captures image information from the substrate recognition camera 44 and the substrate recognition camera 44, various information such as the position of the bonding head 41, stores them in memory, and controls the bonding operation of the bonding head 41 and other structural elements. each action.

FIG. 3 is a schematic cross-sectional view showing main parts of the crystal grain supply unit shown in FIG. 1 . As shown in FIG. 3 , the die supply unit 1 is provided with an extension ring 15 holding the wafer ring 14 , a support ring 17 positioned horizontally with a dicing tape 16 to which a plurality of die D is adhered to be held by the wafer ring 14 , Push-up unit 13 for pushing the die D upward. In order to pick up the predetermined die D, the push-up unit 13 moves in the vertical direction by a driving mechanism not shown, and the die supply unit 1 moves in the horizontal direction.

Next, a bonding method (manufacturing method of a semiconductor device) implemented in the flip chip bonding machine of the embodiment will be described using FIG. 4 . FIG. 4 is a flow chart illustrating a bonding method implemented by the flip chip bonding machine shown in FIG. 1 .

Before the steps described later, the wafer ring 14 holding the dicing tape 16 having the die D and the substrate transfer jig WC holding the substrate P are loaded into the flip chip bonding machine. The loaded substrate P is transported to the bonding table 46, and the center and substrate size of the substrate P are calculated and registered as initial values. Details will be described later.

(Step S21: pick up wafer die) The control device 7 moves the wafer holding table 12 so that the picked-up die D is located directly above the push-up unit 13 , and positions the die to be peeled on the push-up unit 13 and the suction nozzle 22 . The push-up unit 13 is moved so that the upper surface of the push-up unit 13 contacts the back surface of the dicing tape 16 . At this time, the control device 7 is attached to the upper surface of the push-up unit 13 to absorb the dicing tape 16 . The control device 7 lowers the suction nozzle 22 while vacuuming it, lands on the die D to be peeled, and adsorbs the die D. The control device 7 raises the suction nozzle 22 to peel the die D from the dicing tape 16 . Thereby, the die D is picked up by the pick-up and inversion head 21 .

(step S22: move and pick up the turning head) The control device 7 moves the picking and turning head 21 from the picking position to the turning position.

(Step S23: Turn over and pick up the turning head) The control device 7 rotates the pick-up and inversion head 21 by 180 degrees, inverts the protruding surface (surface) of the die D to face downward, and assumes a posture of delivering the die D to the transposition head 81a.

(Step S24: Transpose the head to receive and grant) The control device 7 picks up the die D from the suction nozzle 22 of the reversing pick-up head 21 through the suction nozzle 82 of the transposition head 81 to receive and receive the die D.

(step S25: turn over and pick up the turning head) The control device 7 turns over and picks up the turning head 21, and the suction surface of the suction nozzle 22 faces downward.

(step S26: moving the transposition head) Before or synchronously with step S25 , the control device 7 moves the transposition head 81 to the intermediate table 31 .

(Step S27: Die placement on the intermediate workbench) The control device 7 mounts the die D held by the transposition head 81 on the intermediate table 31 .

(step S28: moving the transposition head) The control device 7 moves the transposition head 81 to the receiving and receiving position of the die D. As shown in FIG.

(Step S29: the position of the middle table moves) After step S28 or synchronously, the control device 7 moves the intermediate table 31 to the receiving and receiving position with the bonding head 41 .

(Step S2A: receiving and receiving of joint head) The control device 7 picks up the die D from the intermediate table 31 through the suction nozzle of the bonding head 41 to receive and receive the die D.

(Step S2B: the position of the middle table moves) The control device 7 moves the intermediate table 31 to the receiving and receiving position with the transposition head 81 .

(Step S2C: Bonding head moves) The control device 7 moves the die D held by the suction nozzle 42 of the bonding head 41 onto the substrate P. As shown in FIG.

(Step S2D: Bonding) The control device 7 bonds (places) the die D picked up by the suction nozzle 42 of the bonding head 41 on the substrate P coated with an adhesive base (adhesive layer) from the intermediate table 31 . Details will be described later.

(Step S2E: Bonding head moves) The control device 7 moves the bonding head 41 to the receiving and receiving position with the intermediate table 31 .

Further, after step S2E, the control device 7 takes out the substrate transfer jig WC holding the substrate P holding the bonded die D from the transfer rails 51 and 52 by the substrate transfer unit 6H. The substrate transfer jig WC holding the substrate P is carried out from the flip chip bonding machine 10 .

After that, by integrally sealing the plurality of crystal grains (semiconductor wafers) disposed on the adhesive layer of the substrate P with a sealing resin to form a sealing body having a plurality of semiconductor chips and a sealing resin covering the plurality of semiconductor chips, the sealing After the stopper is peeled off from the substrate P, a rewiring layer is formed on the surface of the stopper-attached substrate P to manufacture FOWLP.

Next, the bonding stage 46 shown in FIG. 1 will be described using FIG. 5 . FIG. 5 is a top view illustrating the bonding station shown in FIG. 1 .

As shown in FIG. 5 , the bonding table 46 is configured to vacuum absorb and heat both the rectangular substrate for FOPLP and the circular substrate for FOWLP. The rectangular substrate can mount, for example, a substrate with a size of 515 mm×510 mm, and the circular substrate can mount, for example, 12-inch and 8-inch wafer-sized substrates.

The bonding table 46 is equipped with a vacuum suction groove VT1 and a heater HT1 for a circular substrate in the central circle, and a vacuum suction groove VT2 and a heater HT2 for a rectangular substrate on the outer periphery, and a through hole for a substrate transfer jig. Holes EH1, EH2. The through hole EH1 is for a substrate holding claw WSC described later, and the through hole EH2 is used for a substrate positioning claw WPM described later. When placing a circular substrate, use only the central circular heater HT1 and vacuum suction groove VT1, and when mounting a rectangular substrate, use the central circular heater HT1 and the outer peripheral heater HT2 and vacuum suction groove VT1, VT2.

Next, the board|substrate transfer jig WC shown in FIG. 1 is demonstrated using FIG. 6. FIG. FIG. 6 is a diagram illustrating the substrate transfer jig shown in FIG. 1 . FIG. 6( a ) is a top view showing the substrate transfer jig. Fig. 6(b) is a cross-sectional view of line B-B in Fig. 6(a) showing the state before the substrate transfer jig is placed on the bonding table. Fig. 6(c) is a cross-sectional view of line B-B in Fig. 6(a) showing the state where the substrate transfer jig is placed on the bonding table.

The substrate transfer jig WC includes a rectangular substrate WCS with a hole formed in the center, three substrate holding claws WSC for holding the substrate P at three places, and substrate positioning claws WPM. As shown in FIG. 6( b ), the substrate holding claw WSC has a portion WSCa abutting and fixed on the upper surface of the substrate WSC, and a portion WSCb abutting on the lower surface of the substrate P to hold the substrate P. The upper surface of the portion WSCb holding the substrate P is in contact with the lower surface of the substrate P. As shown in FIG. As shown in FIG. 6( c ), the portion WSCb holding the substrate P is embedded in the through hole of the bonding stage 46 , and the lower surface of the substrate P is in contact with the upper surface of the bonding stage 46 .

Here, in order to clarify the die bonding apparatus of the present invention, a problem in placing a die on a substrate will be described using FIG. 7 . FIG. 7 is a diagram illustrating a problem of thermal expansion and contraction of the substrate, and is a conceptual diagram described by superimposing the substrate at the initial stage and the substrate at the time of bonding.

In FOWLP, the substrate size is large (for example, 300 mm in diameter), and it is necessary to bond a large number of crystal grains with high precision such as 3 to 5 μm on a substrate without positioning references. However, due to the influence of environmental temperature changes, changes in substrate temperature required in the process, and changes in equipment over time, changes such as expansion and contraction of the substrates may occur during bonding, which will affect the accuracy after bonding.

For example, as shown in FIG. 7, the design value and the substrate at room temperature or at the start of bonding (initial stage) (this state is described as substrate P0) are thermally expanded in the X-axis direction and the Y-axis direction during the heat treatment at the time of bonding. (This state is described as substrate P1). As a result, the coordinate BC0 of the target bonding based on the design value and the substrate center CN at the initial stage becomes the coordinate BC1 of the target bonding based on the substrate center CN during bonding.

Even if it is the same target, the target joint position deviates from the coordinate BC0 to the coordinate BC1 due to thermal expansion and contraction. However, if this situation is not taken into account, if it is joined without correction, it will be joined to the position of coordinate BC0. Therefore, when returning to the initial state of the substrate after bonding, the bonding position will not be in accordance with the target, resulting in poor accuracy. In order to improve the accuracy when returning to the initial state of the substrate, correction must be applied.

Considering the changes in the thermal expansion and contraction (thermal expansion and thermal contraction) of the substrate relative to the temperature changes caused by the environment and the process, an approximate circle is obtained based on the coordinates of more than 3 arbitrary shapes, and the coordinates of the center point are calculated by calculation. The change over time of the radius from the center point of the measured points is calculated and corrected by calculating the expansion and contraction of each point.

However, the thermal expansion and contraction of the substrate P is not limited to occur uniformly within the substrate for reasons (a) to (f) described later, and the substrate P is not limited to uniform expansion and contraction from the center at any point. Furthermore, the calculated coordinates of the center point also change, so errors occur in the calculation of thermal expansion and contraction, and it is difficult to correctly correct the bonding position in the substrate P due to thermal expansion and contraction.

(a) Bonding is performed sequentially from a part of the substrate P, so the amount of heat absorbed and released by the substrate P in the bonded region and other regions is different, a temperature difference occurs in the substrate P, and a partial difference in thermal expansion and contraction in the substrate P occurs. .

(b) The amount of thermal expansion and contraction in the substrate P varies due to unevenness due to the heater HT1 of the bonding stage 46 which is a heating mechanism for the substrate P.

(c) Due to the influence of heat conduction from the substrate holding claw WSC, which is the clamping (fixed) portion of the substrate P of the substrate transfer jig WC, the amount of heat released from the heated substrate P is partially different, and a temperature difference occurs in the substrate P. , a difference in thermal expansion and contraction occurs in the substrate P.

(d) When the die is placed in an apparatus for both the substrate for FOPLP and the substrate for FOWLP, and the substrate for FOWLP is mounted on the rectangular substrate for FOPLP for processing, the reference guide of the substrate for FOPLP The component part, ie, the substrate positioning claw WPM, undergoes thermal deformation in one direction depending on the position of the substrate P, and the coordinates of the center point also change. Furthermore, due to the shape of the corners and sides of the rectangular substrate WCS in contact, a temperature difference occurs in the substrate P for FOPLP, and a partial difference in thermal expansion and contraction in the substrate P occurs.

(e) A temperature difference occurs due to warping of the substrate P, and a difference in thermal expansion and contraction in the substrate P occurs.

(f) Depending on the properties of the members of the substrate P, thermal expansion and contraction are anisotropic, and thermal deformation is not uniform.

The outline of the joining method of the embodiment which solves the said problem is demonstrated using FIG. 8 and FIG. 9. FIG. Fig. 8 is a diagram illustrating an outline of a joining method according to the embodiment, Fig. 8(a) is a diagram illustrating division of regions, and Fig. 8(b) is a diagram illustrating calculation of thermal expansion and contraction amount. Fig. 9 is a diagram illustrating an example of the effects obtained by the bonding method of the embodiment.

As shown in FIG. 8( a ), the circumference of the substrate P1 is divided into a plurality of regions AR. The coordinates of three or more points on the circumference of each divided area are extracted, and the center coordinates of each area are calculated based on the coordinates. Then, as shown in FIG. 8( b ), based on the center coordinates calculated corresponding to each area, the thermal expansion and contraction (Δr) of the point coordinates on the circumference is calculated and grasped. The amount of change of each coordinate point during bonding is compared with the value of the substrate P0 at the initial stage, and the bonding position is corrected according to the amount of change, and the die is bonded to the substrate.

By utilizing the concept of division and having different correction values corresponding to each area, even the deformity shown in FIG. 9 can be joined. In the situation shown in FIG. 9, only a part of the substrate P1 is heated, and it is in a stretched state. Even in such a situation, by having different correction values in the areas AR1 and AR2 , it is possible to accurately join in the areas AR1 and AR2 .

Thereby, the deformation caused by the uneven thermal expansion and contraction generated in the substrate P can be corrected corresponding to the respective regions. The accuracy of bonding (die placement) to a substrate for FOWLP composed of a circular transparent substrate can be improved. Thereby, the yield rate of FOWLP products can be improved.

Next, the bonding method of the embodiment will be described using FIGS. 10 to 15 . Fig. 10 is a flow chart illustrating the bonding method of the embodiment. 11 is a top view illustrating a method of calculating the center of a substrate. Fig. 12 is a diagram illustrating a method of calculating an approximate circle by the least square method, and obtaining the center (Xc, Yc) and radius (R) of the approximate circle. Fig. 13 is a diagram showing calculation formulas used to calculate an approximate circle by the least square method, and obtain the center (Xc, Yc) and radius (R) of the approximate circle. FIG. 14 is a diagram illustrating an example of area division. FIG. 15 is a diagram illustrating a method of calculating the center of a substrate in one region.

(step S1) The control device 7 transports the substrate P0 held by the substrate transport jig WC to the bonding stage 46, and starts the edge recognition operation of the substrate P0 immediately after the substrate P0 is vacuum-adsorbed. As shown in FIG. 11 , in the identification operation, the control device 7 uses the substrate identification camera 44 to photograph the edges EG1-EG3 of any three points of the substrate P0, to identify (measure) the positions of the three edges EG1-EG3 of the substrate P0, The position and distance are stored in a memory device. Furthermore, the detection of the three edges EG1 to EG3 of the substrate P0 is carried out by edge scanning by the substrate recognition camera 44, but it is also possible to measure the change position by height scanning by a laser height sensor or the like. . The detection of the edge of the board|substrate P0 is not limited to 3, and it may be 4 or more.

(step S2) The control device 7 calculates the center of the substrate P0 and the size (such as the radius) of the substrate P based on the positions of the three edges EG1-EG3 of the substrate P0 measured in step S1, and stores them in the memory device as initial values. . The control device 7 calculates an approximate circle by the least square method based on the measurement results of the edges at three points, and obtains the center (xc, yc) and radius (r) of the approximate circle.

Here, a method of calculating the center (xc, yc) of the circle by approximating the circle with the least square method based on the complex measurement points (xi, yi) will be described with reference to FIGS. 12 and 13 . Furthermore, as shown in FIG. 12 , an approximate circle can be calculated as long as there are three or more measurement points.

When the coordinates (xc, yc) of the center CN of the approximate circle are (a, b) and the radius is r, the calculation formula of the approximate circle is represented by the equation (1) shown in FIG. 13 . Equation (1) can be deformed like Equation (2) shown in FIG. 13 . Here, the parameters A, B, and C of the formula (2) are represented by the formula (3) shown in FIG. 13 .

Parameters A, B, and C are calculated by the least square method using complex measurement points (xi, yi) (i=1~n). That is, parameters A, B, and C are calculated using equation (4) shown in FIG. 13 .

When equation (4) is partially differentiated with parameters A, B, and C, equations (5), (6) and (7) shown in FIG. 13 are obtained. Formulas (5), (6) and (7) expressed in determinant formulas are expressed as Formula (8) shown in FIG. 13, and Formula (8) is transformed into Formula (9) shown in FIG. 13 . According to formula (9), calculate the parameters A, B, C.

(a, b) is calculated by substituting A and B calculated from formula (9) into formula (3). r is calculated by substituting (a, b) calculated from formula (3) and C calculated from formula (9) into formula (3).

(step S3) The control device 7 pre-registers the position where the die D is bonded from the center CN of the substrate P0 , and the die D is sequentially bonded at this position by the bonding head 41 .

(steps S4, S5) The control device 7 determines whether the period (determined period) has passed (step S4) based on a predetermined time or a predetermined number, etc., similar to the setting of time, and continues to join when it has not passed, and detects the substrate P1 again when it has passed. edge (step S5).

Here, the substrate P1 is divided into a plurality of regions on its circumference. Multiple areas can be set arbitrarily. For example, it is equally divided into four into fan shapes centering on the center position of the initial state of the substrate P (substrate P0 ). Based on the joining position, target quadrants (regions) such as the first quadrant (I) to the fourth quadrant (IV) shown in FIG. 14 are determined. The control device 7 measures a plurality of edges of the substrate P1 corresponding to each divided area.

(step S6) As shown in FIG. 15 , the control device 7 takes, for example, the target area, and uses the substrate recognition camera 44 to photograph the edges EG11 to EG13 of any three points of the substrate P1 in the first quadrant, and recognizes (measures) the three edges EG11 of the substrate P1. The position of ~EG13, the position and distance are stored in the memory device. The control device 7 calculates an approximate circle in the same manner as step S2 based on the coordinates of three points on the circumference of the area in the first quadrant. The center CN' (xc', yc') and radius (r') of the approximate circle are calculated and stored in the memory device.

(step S7) The control device 7 is based on the position and radius (r') of the center CN' measured in step S6 and the initial value calculated in step S2, to calculate the point coordinates on the circumference of the substrate P1 relative to the point coordinates on the circumference of the substrate P0 amount of change. For example, the control device 7 calculates the expansion rate according to the radius (r) of the approximate circle calculated in step S2 and the radius (r') of the approximate circle calculated in step S6, and calculates the above-mentioned amount of change.

(step S8) The control device 7 corrects the pre-registered position of the bonding die D according to the amount of change calculated in step S7 , and bonds the die D to the substrate P1 through the bonding head 41 .

(step S9) The control device 7 judges whether or not a predetermined period has elapsed, and if it has not elapsed, continues the engagement in step S8, and when it has elapsed, returns to step S5.

In the embodiment, the center (substrate reference position) and radius (substrate size) of the substrate placed on the bonding table are detected for each preset area, the position is calibrated based on the center reference, and the expansion and contraction correction is performed based on the radius change. Thereby, bonding can be performed following changes in the center of the substrate and the radius of the substrate due to thermal expansion and contraction.

＜Modifications＞ Hereinafter, some representative modification examples of the embodiment will be disclosed. In the following description of the modified examples, the same symbols as those in the above-mentioned embodiment are used for parts having the same structure and function as those described in the above-mentioned embodiment. Then, for the description of relevant parts, the description of the above-mentioned embodiment can be appropriately used within the scope of technical non-contradiction. In addition, a part of the above-mentioned embodiments and all or a part of the plurality of modified examples may be appropriately combined and applied within a range that is not technically contradictory.

(first modified example) A first modification will be described using FIG. 16 . Fig. 16 is a diagram illustrating setting of edge positions in the first modification.

In the embodiment, an example has been described in which the positions of the edges of any three points of the substrate P are measured within the target area, but the three points in the target area are automatically set as 2 points of the farthest portion of the outer periphery of the substrate P within the area. point and its midpoint. For example, as shown in FIG. 16 , when the target area is equally divided into four and the first quadrant is set, the edge EG11 is set at the position on the x-axis, the edge EG13 is set at the position on the y-axis, and the edge EG12 is set at the edge EG11 The location of the midpoint with edge EG13. Thereby, the interval of 3 points can be automatically widened.

(second modified example) Depending on the size of the divided area, the minimum number of measurement points in the area may be determined. When the divided area is small, the center is calculated by treating the area as a circle in the same manner as in the embodiment. At this time, at least 3 points of edge detection are performed. When the divided area is coarse, the area is regarded as an ellipse and the center is calculated. At this time, at least 6 points of edge detection are performed.

The general formula of an ellipse is represented by the following formula. Ax ² +Bxy+Cy ² +Dx+Ey+F=0 Here, A to F are coefficients. Since there are six coefficients, by detecting the edge positions of at least six points, the center coordinates, the length of the major axis, the length of the minor axis, and the inclination of the approximate ellipse can be calculated similarly to the approximate circle of the embodiment.

In addition, regardless of the particle size of the divided region, at least 6 points of the edge are detected, and the ellipse approximation may be used.

(third modified example) In the embodiment, an example in which the substrate P is equally divided and the area is set has been described. However, in the third modified example, when setting the divided area, the control device 7 performs temperature measurement by means of an infrared thermal imaging image or the like. The divided area is set according to the temperature measurement result. In this way, the correction due to the actual deformed area can be performed.

(Fourth modified example) In the fourth modification, when setting the divided regions, the control device 7 uses prior learning to grasp the behavior of heat conduction of the mechanical factor, predicts the influence of the habits, and sets the divided regions.

(fifth modified example) In the fifth modified example, when setting the divided areas, the detailed divided areas are manually input initially, and the control device 7 calculates the expansion coefficient or the correction rate and joins them. Then, when the calculated expansion coefficient or correction rate (expansion rate) is the same, the control device 7 groups the points and sets them in the same area, thereby increasing the production interval time.

(sixth modified example) In the sixth modification, when setting the divided regions, the control device 7 estimates the expansion ratio based on the stored expansion coefficient or correction rate (expansion rate) data, and sets the divided regions.

As mentioned above, the invention invented by the present inventors has been concretely described based on the embodiments and examples. However, the present invention is not limited to the above-mentioned embodiments and examples, and of course various changes can be made.

For example, in the embodiment, the example in which the pick-up part 2, the transposition part 8, the intermediate table part 3 and the joint part 4 are one has been described, but the pick-up part 2, the transposition part 8, the intermediate table part 3 and the The joining parts 4 may be made into two sets, respectively.

In addition, in the embodiment, an example in which one bonding head 41 is provided on the Y beam 43 has been described, however, a plurality of bonding heads may be provided.

Moreover, although the flip chip bonding machine was demonstrated in embodiment, it can also be used for the die bonding machine which performs bonding without inverting the die picked up from the die supply part.

1: Die supply department 2: pick up department 3: Middle workbench 4: Joint 5:Transportation department 6: Control device 6K: Substrate Supply Department 6H: Substrate unloading part 7: Control device 8: Transpose Department 10: Flip chip bonding machine (die bonding device) 11:Wafer 12:Wafer holding table 13: Push up unit 14: wafer ring 15: Extension ring 16: Cutting Tape 17: Support ring 18:Wafer Ring Supply Department 21: Pick up flip head 22: Nozzle 31: Middle workbench 34:Workbench identification camera 41: joint head 42: Nozzle 43: Y beam 44: Substrate identification camera (photographing device) 45:X Beam 46: Joining table 51: Transport track 52: Transport track 81: transpose head 82: Nozzle 83: Y drive unit AR: area AR1: Area AR2: Area D: grain EG1: Edge EG2: Edge EG3: Edge EG11: Edge EG12: Edge EG13: Edge HT1: Heater HT2: Heater P: Substrate P0: Substrate P1: Substrate VT1: vacuum suction ditch VT2: vacuum suction ditch WC: substrate transfer jig WPM: Substrate positioning claw WSC: Substrate Holding Claw

[ Fig. 1 ] A schematic plan view showing a flip chip bonding machine according to an embodiment. [ Fig. 2] Fig. 1 is a view explaining the operation of a pickup inversion head, a transposition head, and a bonding head when viewed from the direction of arrow A in Fig. 1 . [ Fig. 3] Fig. 3 is a schematic cross-sectional view showing main parts of the crystal grain supply unit shown in Fig. 1 . [ FIG. 4 ] A flow chart showing a bonding method implemented by the flip chip bonding machine shown in the figure. [ Fig. 5 ] A top view showing the bonding table shown in Fig. 1 . [ Fig. 6 ] A diagram illustrating the substrate transfer jig shown in Fig. 1 . [ Fig. 7 ] A diagram illustrating a problem of thermal expansion and contraction of the substrate. [ Fig. 8 ] A diagram illustrating an outline of a joining method according to the embodiment. [ Fig. 9 ] A diagram illustrating an example of effects obtained by the bonding method of the embodiment. [ Fig. 10 ] A flow chart illustrating the bonding method of the embodiment. [ Fig. 11 ] A plan view illustrating a method of calculating the center of a substrate. [ Fig. 12] Fig. 12 is a diagram illustrating a method of calculating an approximate circle by the least square method, and obtaining the center (Xc, Yc) and radius (R) of the approximate circle. [ Fig. 13 ] A diagram showing a calculation formula used to calculate an approximate circle by the least square method, and obtain the center (Xc, Yc) and radius (R) of the approximate circle. [FIG. 14] A diagram illustrating an example of region division. [ Fig. 15] Fig. 15 is a diagram illustrating a method of calculating the center of a substrate in one region. [ Fig. 16] Fig. 16 is a diagram illustrating setting of edge positions in a first modification.

Claims (15)

A kind of grain bonding device, it is characterized in that possessing: The bonding head is used to place the picked-up die on the transparent circular substrate; an imaging device for imaging the aforementioned substrate; and A control device is used to control the aforementioned bonding head and the aforementioned camera device; The aforementioned control device is used to identify and measure the multiple edges of the initial state of the aforementioned substrate by means of the aforementioned imaging device, Calculate the initial center position and initial size of the aforementioned substrate based on the aforementioned measured position, Divide the aforementioned substrate into a plurality of areas on the circumference, and after a predetermined time has elapsed or after a predetermined number of joints (after a predetermined period), corresponding to the aforementioned areas of the aforementioned substrate, the plurality of edges are identified and measured by the aforementioned camera device, according to the aforementioned measurement position, calculate the displacement center position and displacement size of the substrate in each area mentioned above, And according to the above-mentioned initial center position and the above-mentioned initial size, and the above-mentioned displacement center position and the above-mentioned displacement size, calculate the coordinates of the outer periphery of the aforementioned substrate after the aforementioned predetermined period, and the change of the coordinates of the outer periphery of the aforementioned initial state of the aforementioned substrate. The way of quantity is formed. The die bonding device as described in claim 1, wherein, The aforementioned control device is based on pre-registering the bonding position of the bonding die with the aforementioned initial central position as a reference, and sequentially bonding the die at the aforementioned bonding position through the bonding head, After the aforementioned predetermined period, the aforementioned bonding position is corrected according to the aforementioned displacement amount, and the bonding head is sequentially bonded to the dies. The die bonding device as described in claim 1, wherein, The aforementioned control device is configured in such a way that the center position and size of the substrate in the aforementioned initial state are calculated by approximating a circle based on the position of the edge at more than three points. The die bonding device as described in claim 3, wherein, The aforementioned control device is configured in such a way that the center position and size of the substrate after the aforementioned predetermined period are calculated by approximating a circle based on the position of the edge at more than three points. The die bonding device as described in claim 3, wherein, The aforementioned control device is configured in such a way that the center position and size of the substrate after the aforementioned predetermined period are calculated by approximating an ellipse based on the positions of more than 6 points of the edge. The die bonding device as described in claim 3, wherein, The control device is located at three edge measurement positions in the area; the three points in the area are composed of two points on the farthest part of the outer periphery of the substrate in the setting area and the middle point. The die bonding device as described in claim 1, wherein, The aforementioned control device is configured in such a way that when the aforementioned substrate is divided into a plurality of areas on the circumference, the temperature is measured using infrared thermal imaging images, and the divided areas are set according to the temperature measurement results. The die bonding device as described in claim 1, wherein, The control device is configured in such a way that when the substrate is divided into a plurality of areas on the circumference, the behavior of the heat conduction of the mechanical factor is grasped by prior learning, and the divided areas are set based on the result of predicting the influence of the behavior. The die bonding device as described in claim 1, wherein, When the aforementioned control device divides the aforementioned substrate into plural areas on the circumference, the detailed divided areas are initially manually input, and then the expansion coefficient or correction rate is calculated and joined, and the aforementioned calculated expansion coefficients or correction rates are the same. In this case, group the locations and set them in the same area. The die bonding device as described in claim 1, wherein, The control device is configured such that when the substrate is divided into a plurality of areas on the circumference, the expansion coefficient is estimated based on the accumulated expansion coefficient or correction rate, and the divided areas are set. A method of manufacturing a semiconductor device, characterized by comprising: Works to move in wafer rings to hold dicing tape with dies; The work of importing transparent circular substrates; and Picking up the aforementioned die from the aforementioned wafer ring, and placing the aforementioned picked up die on the aforementioned substrate; The above-mentioned mounting process is to measure the multiple edges of the initial state of the above-mentioned substrate, Calculate the initial center position and initial size of the aforementioned substrate based on the aforementioned measured position, Divide the above-mentioned substrate into multiple areas on the circumference, measure the multiple edges corresponding to the above-mentioned areas of the above-mentioned substrate after a predetermined time has elapsed or after a predetermined number of joints (after a predetermined period), and calculate each of the above-mentioned areas based on the aforementioned measured positions The displacement center position and displacement size of the substrate, And according to the above-mentioned initial center position and the above-mentioned initial size, and the above-mentioned displacement center position and the above-mentioned displacement size, calculate the coordinates of the outer periphery of the aforementioned substrate after the aforementioned predetermined period, and the change of the coordinates of the outer periphery of the aforementioned initial state of the aforementioned substrate. amount of bits. The method of manufacturing a semiconductor device according to claim 11, wherein, The aforementioned placement process is to pre-register the bonding position of the bonding die based on the aforementioned initial center position, and sequentially bond the die at the aforementioned bonding position, After the above-mentioned predetermined period, the above-mentioned bonding position is corrected according to the above-mentioned displacement amount, and the method of sequentially bonding the die is formed. The method of manufacturing a semiconductor device according to claim 11, wherein, The above-mentioned placement process means that the center position and size of the substrate in the above-mentioned initial state are calculated by approximating the circle based on the position of the edge at more than 3 points. The method of manufacturing a semiconductor device according to claim 13, wherein, The above-mentioned placement process is based on the position of the center of the substrate and the size of the substrate after the predetermined period is calculated by approximating the circle based on the position of the edge at more than 3 points. The method of manufacturing a semiconductor device according to claim 13, wherein, The above-mentioned placement process is based on the position of the center of the substrate and the size of the substrate after the above-mentioned predetermined period is based on the position of the edge of more than 6 points, and is calculated by approximating an ellipse.

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