TW202302260A - Apparatus for laser machining of a substrate, substrate processing system, and method for laser machining of a substrate - Google Patents

Abstract

An apparatus (100) for laser machining of a substrate (130) is provided, the apparatus comprising a laser source (110) configured for radiating a surface of the substrate (130), and an enclosure (120) surrounding the substrate (130), the enclosure (120) having a first gas inlet (121a) and a first gas outlet (122a) configured to provide a first gas flow (F1) above an upper surface (131) of the substrate (130) and a second gas inlet (121b) and a second gas outlet (122b) configured to provide a second gas flow (F2) below a lower surface (132) of the substrate (130), wherein the substrate (130) remains stationary relative to the enclosure (120) during the radiating of the surface of the substrate (130).

Description

Equipment for laser processing substrate, substrate processing system, and method for laser processing substrate

Embodiments of the present disclosure relate to apparatus and methods for laser processing substrates. More particularly, embodiments described herein relate to apparatus and methods for extracting dust generated by laser processing substrates, particularly crystalline silicon (c-Si) substrates.

In fields such as next-generation PCB manufacturing, solar cell manufacturing or packaging of silicon semiconductor components, there is an increasing demand for batch processing of substrates such as crystalline silicon (c-Si) substrates, especially c-Si wafers. Substrates can be processed by laser processing methods, especially laser drilling and laser cutting, to achieve high throughput and high accuracy.

Challenges arise when processing substrates with high precision while also adequately removing dust and debris generated during the processing. For example, during laser drilling of substrates such as c-Si wafers, it is difficult to extract dust from blind holes. Vibration or movement of the substrate caused by dust extraction is not only detrimental to the accuracy of the laser processing process, but may also damage the substrate. In particular, thin and fragile substrates are particularly susceptible to damage or cracks during dust extraction.

Examples of dust extraction devices are described, for example, in US Patent Application Publication No. US 2003/121896 Al . Among them, the laser cleaning equipment has an air flow across the upper surface of the substrate, so that the pollutants released from the surface of the substrate by the excimer laser are carried away from the surface. The lower pressure gas flow allows removal of contaminants from pores and crevices in the substrate. However, vibration and movement of the substrate caused by the gas flow still occurs. In the case of cleaning or decontamination operations, problems caused by vibration and movement of the substrate may be of little concern. However, when laser processing substrates, especially silicon wafers, vibration and/or movement of the substrate can cause accuracy errors and present further challenges in focusing the laser on the substrate surface.

In view of the above, new methods and apparatus for laser processing substrates are sought that overcome at least some of the problems in the art. In particular, the present disclosure seeks to improve dust extraction during laser processing of substrates, especially crystalline silicon (c-Si) substrates such as c-Si wafers, without compromising the accuracy of laser processing.

According to one embodiment, an apparatus for laser processing a substrate is provided. The apparatus includes a laser source configured to irradiate a surface of a substrate, and a housing surrounding the substrate, the housing having a first gas inlet and a first gas outlet configured to provide a first gas flow over the upper surface of the substrate, and A second gas inlet and a second gas outlet configured to provide a second gas flow below a lower surface of the substrate, wherein the substrate remains fixed relative to the housing during irradiation of the surface of the substrate.

According to another embodiment, a substrate processing system is provided. The substrate processing system includes an apparatus for laser processing according to embodiments described herein, and a substrate transport configured to transport substrates into and out of the apparatus.

According to another embodiment, a method for laser processing a substrate is provided. The method includes providing a substrate inside an enclosure, providing a first gas flow above an upper surface of the substrate and a second gas flow below a lower surface of the substrate, and irradiating the surface of the substrate with a laser source, wherein the substrate is on the side of the substrate The surface remains in a fixed position relative to the enclosure during irradiation.

Embodiments are also directed to an apparatus for performing the disclosed methods, and includes apparatus portions for performing each described method aspect. Such method aspects may be performed by means of hardware components, a computer programmed by suitable software, by any combination of the two, or in any other manner. Additionally, embodiments in accordance with the present disclosure are also directed to methods for operating the apparatus. The method for operating the device includes method aspects for performing each function of the device.

Reference will now be made in detail to the various embodiments of the present disclosure, one or more examples of which are illustrated in the figures. In the following description of the drawings, the same reference numerals designate the same parts. In general, only differences with respect to individual embodiments are described. Each example is provided by way of explanation of the disclosure, and is not meant as a limitation of the disclosure. In addition, features illustrated or described as part of one embodiment can be used on or in conjunction with other embodiments to yield a further embodiment. It is intended that the description include such modifications and variations.

FIG. 1A and FIG. 1B show schematic diagrams of dust extraction from the surface of a substrate 130 using an airflow F according to the prior art. The substrate 130 is disposed on the substrate supporter 140 , and the air flow F is provided parallel to and in contact with the upper surface of the substrate 130 . A boundary layer is formed at the upper surface of the substrate 130 . In this example, the air flow F is provided to flow from left to right. The laser source 110 irradiates the upper surface of the substrate 130 to perform an operation on the substrate, for example, a processing operation or a cleaning operation. Detail view D is shown in Figure 1B. In this example, blind holes 133 are machined in the surface of the substrate 130 by means of the laser source 110 , which generates dust 134 . The low pressure of the airflow F causes the dust 134 to be removed from the blind hole 133 and carried away by the airflow F, as shown in the prior art.

When implementing the airflow dust extraction method according to the prior art, there arises a problem in which the airflow induces vibration and movement of the substrate 130 . The low pressure of the air flow F causes a lift force P to act on the upper surface of the substrate 130 . Depending on the type of support provided by the substrate support 140 , the lift P can cause the substrate 130 to lift off the substrate support 140 or move relative to the laser source 110 . For example, if the substrate support 140 supports the substrate 130 only on the bottom surface, the lift force P may cause the substrate 130 to move relative to the laser source 110 . Such movement can lead to accuracy errors in laser processing. In another example, if the substrate support 140 includes one or more edge clamps, the thin and fragile substrate 130 may be lifted at the central region of the substrate 130 . Such warping may result in a reduced distance from the laser source 110 to the upper surface of the substrate 130, compromising laser focus.

In addition, after machining the blind hole 133 in the surface of the substrate 130 , the trailing edge of the blind hole 133 may cause small eddies to form at the surface of the substrate 130 . These small eddies can cause a vibration force V to act on the upper surface of the substrate 130 . Like the lift force P, the vibration force V may cause the substrate to move relative to the laser source 110, or may impair laser focus. In addition, the vibration caused by the vibration force V may damage the substrate 130 .

In view of the problems that have arisen in the prior art, an improved apparatus for laser processing substrates is sought. In particular, improved dust extraction that suppresses vibration and movement of substrates during laser processing is sought to efficiently remove dust and debris without compromising laser processing accuracy.

According to one embodiment of the present disclosure, an apparatus 100 for laser processing a substrate 130 is provided. The device 100 is shown schematically in a schematic side view in FIG. 2 and in a schematic front view in FIG. 3 . Apparatus 100 includes a laser source 110 configured to irradiate a surface of a substrate 130 and a housing 120 surrounding the substrate 130 . The housing 120 includes a first gas inlet 121a and a first gas outlet 122a configured to provide a first gas flow _F1 above the upper surface 131 of the substrate 130 and a first gas outlet 122a configured to provide a second gas flow F below the lower surface 132 of the substrate 130 ₂ second gas inlet 121b and second gas outlet 122b. The substrate 130 remains fixed relative to the housing 120 during irradiation of the surface of the substrate 130 .

As described herein, a substrate may be understood as a generally planar sheet of material. For example, the substrate 130 can be a wafer. The substrate 130 can be a semiconductor substrate or a semiconductor wafer, specifically a silicon substrate or a silicon wafer. For example, the substrate 130 can be a c-Si wafer. The substrate 130 may be a substantially rectangular substrate. The term "substantially rectangular" may include, for example, shapes that have rounded corners but still have a rectangular shape ("pseudo-square" substrates). The substrate 130 may be a substrate used in printed circuit board (printed circuit board; PCB) applications. The substrate 130 may have a length of 20 cm or less in the first direction and/or a length of 20 cm or less in the second direction. The substrate 130 (such as a silicon substrate) can be a thin sheet of material. Substrate 130 may have a thickness of 150 μm or less, such as 120 μm or less, or even 100 μm or less.

The laser source 110 is configured to irradiate at least one surface of the substrate 130 . The type of laser used in the laser source 110 may be suitable for laser processing, especially laser processing of silicon materials. For example, the laser source 110 may include a gas laser, a solid state laser, or an excimer laser. In the apparatus 100 exemplarily shown in FIGS. 2 and 3 , a laser source 110 is disposed above a substrate 130 and directed downwards so as to irradiate the upper surface 131 of the substrate 130 . However, the present disclosure is not limited thereto. For example, the laser source 110 may be disposed below the substrate 130 and directed upward to irradiate the lower surface 132 of the substrate 130 . Alternatively, the substrate 130 may be oriented substantially vertically, and the laser source 110 may be disposed on one side of the substrate 130 and directed horizontally so as to irradiate the side surface of the substrate 130 .

A processing operation may be performed on the surface of the substrate 130 by irradiating the surface of the substrate 130 with the laser source 110 . For example, the laser source 110 may be configured to perform a laser drilling operation, a laser milling operation, or a laser cutting operation on the surface of the substrate 130 . In general, laser source 110 is configured for at least one subtractive operation used to form features on the surface of substrate 130 .

As exemplarily shown in FIGS. 2 and 3 , the laser source 110 is shown as a self-contained component positioned above a substrate 130 . However, the present disclosure is not limited thereto, and laser source 110 may include any laser source known in the state of the art for directing a laser beam onto the surface of substrate 130 . For example, the laser source 110 may include one or more fixed or movable mirror elements, lens elements or filter elements arranged to direct a laser beam from the source to the surface of the substrate 130 .

According to an embodiment, which may be combined with other embodiments described herein, at least one of the first air flow (F ₁ ) and the second air flow (F ₂ ) may be a substantially laminar air flow. By providing a laminar or at least substantially laminar gas flow above and/or below the substrate, possible pressure fluctuations or imbalances that could cause movement or vibration of the substrate 130 are avoided. In particular, a laminar or at least substantially laminar air flow has little turbulence. With little turbulence, laminar or at least substantially laminar airflow introduces reduced vibrational forces into substrate 130, allowing substrate 130 to remain stable.

In the context of the present disclosure, the term "laminar gas flow" indicates a gas flow, especially a gas flow over a solid surface, comprising layers of gas particles that flow past each other with little mixing. In other words, "laminar gas flow" indicates a gas whose velocity is below a threshold velocity at which the flow becomes turbulent. In the present disclosure, the characteristic "providing a laminar gas flow" indicates providing a gas flow at a velocity below the threshold velocity at which the gas flow becomes turbulent, especially a flow that is in contact with and parallel to at least one surface of the substrate. Additionally, in the context of the present disclosure, the term "substantially laminar" may indicate a gas whose velocity is at or near the threshold velocity at which the flow becomes turbulent, or may indicate that the flow is laminar in a region corresponding to the surface area of the substrate A gas flow that can be turbulent in areas other than the surface area of the substrate. For example, a "substantially laminar" airflow may be laminar across the substrate surface, but may become turbulent at regions away from the substrate surface, where such turbulent flow may be caused by the substrate support or another component within the housing 120 cause.

In the case of an airflow parallel to and in contact with the surface of a smooth flat sheet (eg, substrate 130 ), a boundary layer may form at the surface of the smooth flat sheet. The boundary layer at the surface of a smooth flat sheet has a Reynolds transition number at which the flow transitions from a laminar flow to a turbulent flow of approximately ¹⁰⁶ . Thus, in the context of the present disclosure, a laminar or at least substantially laminar gas flow across the surface of the substrate 130 (i.e., parallel to and in contact with the surface of the substrate 130) has a flow across the entire surface of the substrate 130 at or below The Reynolds number of 10 ⁶ . When the apparatus 100 has the substrate 130 unprocessed (i.e., at a time prior to laser processing), and when the substrate 130 is in a smooth, flat state, the parameters for providing a laminar, or at least substantially laminar, gas flow are set .

The first gas flow F ₁ is provided over the upper surface 131 of the substrate 130 . The first gas flow F ₁ may be laminar or at least substantially laminar. The first gas flow _F1 enters the housing 120 via the first gas inlet 121a. The first gas inlet 121a is configured to provide a gas flow, and may be further configured to provide a laminar or at least substantially laminar gas flow. The first gas inlet 121 a may comprise a single hole in the wall 125 of the housing 120 , or may comprise an array of holes in the wall 125 of the housing 120 . The first gas inlet 121a may further include one or more flow elements configured to achieve a laminar or at least substantially laminar flow of gas flow, eg, an array of parallel vanes, an array of turning vanes, a venturi element, or the like. The first gas flow F ₁ then flows above the upper surface 131 of the substrate 130 , specifically parallel to and in contact with the upper surface 131 of the substrate 130 , and exits the housing 120 through the first gas outlet 122 a. Similar to the first gas inlet 121a , the first gas outlet 122a may comprise a single hole in the wall 125 of the housing 120 , or may comprise an array of holes in the wall 125 of the housing 120 . The first gas outlet 122a may be disposed in the housing 120, in a portion opposite to the first gas inlet 121a, so that the first flow _F1 flows from the first gas inlet 121a (above the upper surface 131 of the substrate 130), and flows to the first gas outlet 122a.

The first airflow F ₁ may be configured to remove dust and/or debris from features machined on the surface of the substrate 130 by laser machining. For example, in the case of laser-machining blind holes, the pressure inside the blind holes is higher than the pressure of the first air flow _F1 , resulting in dust and/or debris generated at the base of the blind holes being ejected into the first air flow F ₁ to be taken out of the housing 120 via the first gas outlet 122a.

The second gas flow F ₂ is provided below the lower surface 131 of the substrate 132 . The second gas flow _F2 may be laminar or at least substantially laminar. The second gas flow _F2 enters the housing 120 via the second gas inlet 121b and exits the housing 120 via the second gas outlet 122b. The second gas inlet 121b and the second gas outlet 122b may be substantially the same as the first gas inlet 121a and the first gas outlet 122a, respectively. The second air flow F ₂ may be configured to flow parallel to and in contact with the lower surface 132 of the substrate 130 , however, the disclosure is not limited thereto. For example, the substrate 130 may be disposed on the substrate support 140 , and the second air flow F ₂ may flow parallel to and in contact with the lower surface of the substrate support 140 .

By providing the second gas flow F ₂ below the lower surface 132 of the substrate 130 , a low pressure is provided below the substrate 130 in a similar manner to the low pressure provided above the substrate 130 by the first gas flow F ₁ . The low pressure provided by the second flow _F2 has the effect of neutralizing the low pressure provided by the first flow _F1 over the substrate 130 such that the resulting lift P is eliminated. With no lifting force P acting on the upper surface 131 of the substrate 130, the warping of the substrate 130 no longer occurs, and the substrate 130 remains in a more stable position during laser processing. Then the laser processing accuracy is improved, and the focus of the laser on the surface of the substrate 130 is improved. Additionally, by neutralizing any movement of the substrate 130, possible damage to the thin and fragile substrate is avoided.

The first gas flow F ₁ and the second gas flow F ₂ may include at least one of air, process gas, noble gas, or a mixture thereof. The first air flow F ₁ and the second air flow F ₂ may flow substantially parallel to each other, and more specifically, parallel to the substrate 130 . By aligning the first airflow _F1 and the second airflow _F2 parallel to each other, the interaction between the two airflows is reduced and effects on the respective upper surface 131 and lower surface 132 of the substrate 130 are avoided. mobility.

The first gas flow F ₁ and the second gas flow F ₂ may be configured to flow at substantially the same speed, ie, such that the pressure above the substrate 130 is the same as the pressure below the substrate 130 . However, the present disclosure is not limited thereto. For example, the second airflow _F2 may have a higher velocity than the first airflow _F1 such that the pressure below the substrate 130 is less than the pressure above the substrate 130, thereby having the ability to push the substrate 130 down to the surface of the substrate support 140 This has the effect of maintaining the substrate 130 in a more stable position during laser processing.

During irradiation of the surface of the substrate 130 (ie, during laser processing of the substrate 130 ), the substrate 130 is configured to remain fixed relative to the housing 120 . The flow characteristics may be affected by the geometry of the housing 120, the substrate support 140, the first and second gas inlets 121a and 121b, and the first and second gas outlets 122a and 122b such that in different regions of the housing 120 there may be different flow characteristics. Moving the substrate 130 (and in particular the substrate support 140 ) may change the geometry of the elements within the housing 120 and may result in changes in flow characteristics. Similarly, moving housing 120 relative to substrate 130 may change the geometry of components within housing 120 and may result in changes in flow characteristics. By maintaining the substrate 130 in a fixed position relative to the housing 120 during the irradiation of the surface of the substrate 130, the flow characteristics of the first air flow _F1 and the second air flow _F2 are kept constant so as to avoid possible movement or vibration of the substrate 130 possible pressure fluctuations or imbalances. During times other than during irradiation of the substrate surface (i.e., times other than when laser processing is occurring), the substrate 130 may be moved relative to the housing 120, for example, during loading of the substrate 130 into and from the housing 120. This is the case during unloading 120 of the substrate 130, or when aligning the substrate 130 at an aligned processing position prior to laser processing.

The enclosure 120 is provided to enclose the substrate 130 and define a volume through which the first airflow _F1 and the second airflow _F2 can flow. Enclosure 120 may be considered a processing chamber in which substrate 130 is processed. The housing 120 may be hermetically sealed, especially in the case where the first gas flow F ₁ and the second gas flow F ₂ include process gas. As exemplarily shown in FIGS. 2 and 3 , the housing 120 may have a substantially cuboid shape, however, the present disclosure is not limited thereto. For example, the housing 120 may have a cylindrical shape, a hexagonal prism shape, or any other shape in which the substrate 130 may be enclosed and the first airflow _F1 and the second airflow _F2 may be provided.

According to an embodiment, which may be combined with other embodiments described herein, the housing 120 includes a bottom plate 123, a top plate 124 and at least one wall 125 having a first gas inlet 121a and a second gas inlet 121b and a first gas The outlet 122a and the second gas outlet 122b. For example, the at least one wall 125 may comprise a single cylindrical wall, a plurality of flat walls joined together at respective edges, or a combination of curved and flat walls. In particular, at least one wall 125 connects the bottom panel 123 to the top panel 124 to form an enclosed volume.

According to an embodiment, which may be combined with other embodiments described herein, the first airflow _F1 flows between the top plate 124 and the upper surface 131 of the substrate 130, and the second airflow _F2 flows between the bottom plate 123 and the lower surface 132 of the substrate 130. flows between. In other words, the bottom plate 123 and the top plate 124 are arranged substantially parallel to the substrate 130, such that the first airflow _F1 flows between the upper surface 131 and the top plate 124 of the substrate 130, and the second airflow _F2 flows over the lower surface 132 of the substrate 130. Flow between the bottom plate 123.

According to an embodiment, which can be combined with other embodiments described herein, the top plate 124 can include a first laser opening 126a, and the housing 120 further includes a cover assembly 127 movable relative to the top plate 124 (the cover assembly has a second laser opening 126a). opening 126b) and a sliding seal 129 between the top plate 124 and the lid assembly 127, wherein the laser source 110 is configured to irradiate the surface of the substrate 130 through the first laser opening 126a and the second laser opening 126b. In other words, the top plate 124 and the cover assembly 127 of the housing 120 are configured to allow the laser beam emitted by the laser source 110 to enter the housing 120 and radiate the surface of the substrate 130 .

As exemplarily shown in FIGS. 2 and 3, the laser source 110 can be mounted to the cover assembly 127, and by slidably moving the cover assembly 127 in the X and Z directions, the position above the substrate 130 can be adjusted. Locations on surface 131 where laser machining may be performed. The sliding seal 129 disposed between the top plate 124 and the cover assembly 127 is used to reduce the friction between the top plate 124 and the cover assembly 127 and maintain the volume inside the housing 120 in a substantially sealed state.

The first laser opening 126a may be substantially the same size and shape as the substrate 130, so that laser beams directed through the first laser opening 126a (in particular from the laser source 110 moving in the X and Z directions) The laser beam may be irradiated on any part of the upper surface 131 of the substrate 130 . On the other hand, the second laser opening 126b disposed in the cover assembly 127 may have a substantially smaller area than the first laser opening 126a because the cover assembly 127 (and thus the second laser opening 126b) follows the laser beam. The source 110 is slidably movable in the X and Z directions together.

Alternatively, at least one of the first laser opening 126 a and the second laser opening 126 b may include an optical transparent element for allowing the laser beam emitted by the laser source 110 to enter the housing 120 . The optically transparent elements will allow the housing 120 to maintain a hermetic seal, especially in the case where the first gas flow _Fi and the second gas flow _F2 include process gases or noble gases.

The elements referred to herein as “top plate” 124 and “cover assembly” 127 are not limited to being on the upper side of housing 120 . For example, similar to the laser source 110, a "top plate" 124 and a "cover assembly" 127 may be arranged at the underside of the housing 120 for allowing the laser beam emitted by the laser source 110 to radiate the lower surface of the substrate 130 132. Features of the "top plate" 124 and "cover assembly" 127 described herein apply to corresponding portions of the housing 120 configured to allow the laser beam emitted by the laser source 110 to enter the housing 120 without being directed or directed thereto. Location is irrelevant.

According to an embodiment, which may be combined with other embodiments described herein, the cover assembly 127 may further include a shield 128 with the laser source 110 disposed within the shield 128 . For example, the shield 128 may include a cylindrical wall extending in a direction parallel to the laser beam emitted by the laser source 110 and may generally surround the laser source 110 . By disposing the laser source 110 within the shield 128, accumulation of dust or debris on the surface of the laser source 110 (e.g., on one or more mirror elements, lens elements, or filter elements) can be reduced. amount of crumbs. Maintaining the cleanliness of the laser source 110 improves the efficiency, accuracy, and focus of the laser beam emitted by the laser source 110, and reduces the effects of laser beam scattering.

Reference will now be made to FIG. 4 , which shows a schematic top view of a substrate processing system including an apparatus 100 for laser processing a substrate 130 . According to embodiments, which may be combined with other embodiments described herein, apparatus 100 may further include at least one vacuum device 152 in fluid communication with first gas outlet 122a and/or second gas outlet 122b, and with first gas inlet 121a And/or at least one blower device 151 in fluid communication with the second gas inlet 121b. For example, apparatus 100 may include one or more fans or vacuum pumps configured to push gas through first gas outlet 122a and/or second gas outlet 122b to generate first airflow _F1 and second airflow F1 ₂ . Alternatively, the apparatus 100 may include one or more fans or gas nozzles configured to push gas through the first gas inlet 121a and/or the second gas inlet 121b to generate the first airflow _F1 and the second airflow _F2 . A combination of vacuum means and blower means may be used. At least one vacuum device 152 and/or at least one blower device 151 may be controllable in order to adjust the speed of the first air flow _F1 and the second air flow _F2 , respectively.

The apparatus 100 may further include at least one dust collector device 150 in fluid communication with the first gas outlet 122a and/or the second gas outlet 122b. The airflow exiting housing 120 carries dust and/or debris generated by the laser machining process, and the dust and/or debris may be collected. The at least one dust collector device 150 may comprise one of an inertial type dust collector (e.g., a cyclone or baffle type dust collector), a filter type dust collector, a scrubber type dust collector, or an electrostatic type dust collector either. After the gas flow passes through the at least one dust collector device 150, the gas flow may be recirculated and reused as inlet gas to provide the first gas flow _F1 and the second gas flow F2 through the first gas inlet 121a and the second gas inlet _121b .

According to an embodiment, which may be combined with other embodiments described herein, the apparatus 100 may further include a substrate support 140 configured to support a substrate 130 . The substrate support 140 may be configured to simply support the lower surface 132 of the substrate 130 against gravity, or may be configured to support the substrate 130 by at least one holding device. The substrate support 140 may include at least one of the group consisting of an electrostatic chuck, a vacuum chuck, and an edge chuck. Since the first airflow _F1 and the second airflow _F2 are provided (which neutralize the pressure above and below the substrate 130 and suppress the movement and vibration of the substrate 130), the holding device can hold the substrate 130 with reduced force, thereby reducing the holding force. Chance of the device causing damage to the substrate. Alternatively, fewer holding devices may be used to support the substrate 130 , thereby reducing the number of contact points with the substrate 130 .

The substrate support 140 is movable within the housing 120 . For example, the substrate support 140 may be a substrate carrier configured to be transported into and out of the housing 120 along with the substrate 130 supported thereon. In another example, the substrate support 140 may include or be attached to a substrate aligner configured for fine alignment of the substrate 130 relative to the laser source 110 . However, in order to maintain constant flow characteristics of the first and second airflows _F1 and _F2 , the substrate support 140 is configured to hold the substrate while the surface of the substrate 130 is being irradiated (i.e., while the substrate 130 is being laser processed). 130 is in a fixed position relative to housing 120 .

According to an embodiment of the present disclosure, a substrate processing system 200 is provided. The substrate processing system 200 includes an apparatus for laser processing 100 according to embodiments described herein, and a substrate transporter 210 configured to transport substrates into and out of the apparatus 100 .

The substrate transport 210 may include any device for moving one or more substrates throughout a substrate processing system, in particular one or more substrate carriers that support the substrates. For example, the substrate transporter 210 may be a conveyor belt system, a magnetic levitation system, a robotic arm or a cassette loader, among others. To facilitate transport of substrates into and out of apparatus 100, housing 120 may further comprise at least one opening in at least one wall 125 for a substrate, in particular a substrate carrier for supporting the substrate. The at least one opening may be a valve or a door. As exemplarily shown in FIG. 4 , the substrate support 210 may be configured for transporting the substrate 130 a to be processed (in particular, the substrate carrier supporting the substrate 130 a to be processed) from the first side into the housing 120 , And for transporting the processed substrate 130b (specifically, the substrate carrier supporting the processed substrate 130b ) out of the housing 120 from the second side.

The substrate processing system 200 may further include one or more load lock chambers. In cases where the first gas flow _F1 and the second gas flow _F2 comprise process gases or noble gases, the substrate 130, in particular the substrate carrier supporting the substrate 130, may be transported into and out of the enclosure via the load lock chamber 120, so that process gas or rare gas will not be exhausted from the housing 120 during loading and unloading of the substrate.

According to an embodiment, which can be combined with other embodiments described herein, the substrate processing system further includes a substrate aligner configured to align the substrate (130) relative to the laser source 110, and configured to evaluate the substrate ( 130) A vision system relative to the position of the laser source 110, wherein the vision system includes at least one of a camera and an illumination device.

The substrate aligner may include one or more actuators, in particular piezoelectric actuators, configured to move the substrate 130 in at least one of the X, Y, and Z directions. In particular, the substrate aligner may be configured to move a substrate carrier or substrate support that supports the substrate 130 . The substrate transporter 210 may be configured for coarse positioning of the substrate 130 (specifically, the substrate carrier supporting the substrate 130 ), while the substrate aligner may be configured for fine positioning of the substrate 130 (specifically, the carrier supporting the substrate 130 ). ).

The vision system can be configured to illuminate the substrate in a first position and use one or more cameras to accurately determine the exact position of the substrate 130 relative to the laser source 110 . For example, the lighting device may be configured to project a reference pattern, such as a grid, onto the substrate 110 . The illuminated substrate can be captured by one or more cameras to determine one or more offset distances, which are communicated to the substrate aligner for fine alignment of the substrate. The vision system and system aligner can be configured for step and repeat alignment of the substrate 130, wherein a first position assessment is performed by the vision system, the substrate is stepped to a second position by the substrate aligner, and the second position The evaluation is performed by the vision system, and the step-by-step process is repeated until the substrate is in the exact processing position relative to the laser source 110 .

The substrate aligner and vision system may be configured to assess the position of the substrate 130 and align the substrate 130 relative to the laser source 110 while the first and second airflows F ₁ and F ₂ are flowing. Since the first airflow _F1 and _the second airflow _F2 are configured to maintain the substrate 130 _in a stable position during irradiation of the substrate 130, it is possible to 130 to achieve improved alignment accuracy.

The substrate processing system 200 may further include at least one controller configured to control elements of the substrate processing system 200 . Specifically, the substrate processing system 200 may include at least one of a dust extraction controller, a laser source controller, a substrate transport controller, a substrate aligner controller, and a vision system controller. A dust extraction controller may be provided to activate/deactivate the first airflow _F1 and/or the second airflow _F2 to control the speed of the first airflow _F1 and/or the second airflow _F2 , operate at least one vacuum device 152 or At least one blower device 151, or at least one dust collection device 150 is operated. A laser source controller may be provided to enable/disable the laser source 110, adjust one or more parameters of the laser source 110, or adjust the position of the laser source device in the X and/or Z directions. A substrate transport controller may be provided to control the substrate transport 210 for transporting one or more substrates 130 into or out of the enclosure 120 . A substrate aligner controller and/or a vision controller may be provided to operate one or more cameras and/or lighting devices of the vision system to assess the position of the substrate 130 relative to the laser source 110, and to operate the substrate aligner to align the substrate 130 relative to the laser source 110 .

The dust extraction controller, laser source controller, substrate transport controller, substrate aligner controller, and/or vision system controller may each include a central processing unit (CPU), memory, and, for example, support circuit. To facilitate control of the substrate processing system 200, the CPU of the respective controller(s) may be one of any form of general purpose computer processor, which may be used in an industrial setting to control various chambers and sub-processors. The memory is coupled to the CPU. The memory or computer-readable medium can be one or more readily available memory components, such as random access memory, read-only memory, hard disk, or any other form of digital storage (local or remote ). Support circuitry can be coupled to the CPU for supporting the processor in a conventional manner. Such circuits include cache memory, power supplies, clock circuits, input/output circuitry and related subsystems, and the like. Substrate processing instructions are usually stored in memory as software routines, often called recipes. The software routines may also be stored and/or executed by a second controller or CPU located remotely from the hardware controlled by the controller(s). When executed by the CPU, the software utility transforms the general-purpose computer into a special-purpose computer (the controller), which controls the substrate processing. One or more of the methods described herein can be performed in hardware and by software controllers. As such, the methods can be implemented in software as executed on a computer system, and in hardware as an application specific integrated circuit or other type of hardware, or as a combination of software and hardware. The controller(s) may execute or perform methods according to embodiments of the present disclosure.

According to one embodiment of the present disclosure, a method 300 for laser processing a substrate 130 is provided. Method 300 is shown in FIG. 5 and begins at block 310 . The method 300 includes providing the substrate 130 inside the enclosure at a block 320, providing a first airflow _F1 above the upper surface 131 of the substrate 130 and a second airflow _F2 below the lower surface 132 of the substrate 130 at a block 340, and The surface of the substrate 130 is irradiated by the laser source 110 at block 360 , wherein the substrate 130 is maintained at a fixed position relative to the housing 120 during the irradiation of the surface of the substrate 130 . Method 300 ends at block 380 .

At block 320 , providing the substrate 130 inside the enclosure 120 may include transporting the substrate 130 into the enclosure 120 using the substrate transport 210 . The substrate 130 may be carried into the enclosure 120 on a substrate support 140 , in particular a substrate carrier, and positioned within the enclosure 120 at a processing location. The housing 120 may have at least one opening through which the substrate transporter 210 may transport the substrate 130 . The at least one opening may be a valve or a door and may be connected to the load lock chamber.

At block 330, the method 300 optionally includes aligning the substrate 130, in particular aligning the substrate 130 to a processing location. The alignment may be performed by a substrate aligner configured to move one of the substrate 130 or the substrate support 140 so that the processing position of the substrate 130 is accurately aligned relative to the laser source 110 . Aligning the substrate 130 may further include operating a vision system including at least one of a camera and an illumination device in order to assess the exact position of the substrate 130 relative to the laser source 110 . Alignment of the substrate 130 may then be performed based on the evaluation of the vision system. Alignment of the substrate 130 can be stepwise and iterative, wherein the vision system evaluates the first position of the substrate 130 relative to the laser source 110, the substrate aligner steps to the new position, and the vision system re-evaluates the relative position of the substrate 130 relative to the laser source 110. The new position of the laser source 110 is used for another stepping of the substrate aligner.

At block 340 , the method 300 includes providing a first gas flow F ₁ and a second gas flow F ₂ . Wherein, at least one vacuum device 152 in fluid communication with the first gas outlet 122a and/or the second gas outlet 122b or at least one blower device 151 in fluid communication with the first gas inlet 121a and/or the second gas inlet 121b can be operated. Providing the first airflow _F1 and the second airflow _F2 may further include adjusting the velocity of the first airflow _F1 and/or the second airflow _F2 . The first airflow F ₁ is provided to flow over the upper surface 131 of the substrate 130 , and the second airflow F ₂ is provided to flow under the lower surface 132 of the substrate 130 . The corresponding pressures of the first air flow F ₁ and the second air flow F ₂ can neutralize the lifting force P acting on the substrate 130 , so that the movement or vibration of the substrate 130 can be suppressed, and the laser processing accuracy can be improved.

At block 350 , the method 300 optionally includes positioning the laser source 110 , in particular aligning the laser source 110 to direct the laser beam at a target location on the surface of the substrate 130 (eg, the upper surface 131 ). Laser source 110 and/or cover assembly 127 can be moved at X and/or Z positions to direct a laser beam emitted by laser source 110 to a target location on the surface of substrate 130 where features will be located position is processed. Positioning the laser beam 110 may further include adjusting the focus of the laser source 110 .

At block 360 , the method 300 includes irradiating the surface of the substrate 130 by the laser source 110 . Specifically, the upper surface 131 of the substrate 130 is irradiated by the laser beam emitted from the laser source 110 . By irradiating the surface of substrate 130 , a laser machining operation may be performed to form one or more machined features on the surface of substrate 130 . For example, the laser machining operation may be one of laser drilling, laser milling, or laser cutting. Irradiating the surface of the substrate 130 may further include adjusting at least one operating parameter of the laser source 110 . For example, at least one of beam power, beam area, or beam shape may be adjusted before irradiating the surface of the substrate 130 or during irradiating the surface of the substrate 130 .

Positioning the laser source 110 at optional block 350 and irradiating the surface of the substrate 130 at block 360 may be repeated. For example, laser source 110 may be positioned at a first processing location, and a first feature may be processed into the surface of substrate 130 at the first processing location. Subsequently, laser source 110 may be repositioned at a second processing location, and a second feature may be processed into the surface of substrate 130 at the second processing location. In addition, irradiating the surface of the substrate at block 360 and positioning the laser source 110 at optional block 350 may be performed simultaneously so that the laser beam emitted from the laser source 110 may radiate to the surface of the substrate 130 in a straight line, curve or pattern superior.

The substrate 130 is maintained in a fixed position relative to the housing 120 during at least the irradiation of the surface of the substrate 130 . By maintaining the substrate 130 at a fixed position, the flow characteristics of the first airflow _F1 and the second airflow _F2 remain constant, thereby preventing possible pressure fluctuations or imbalances caused by causing movement or vibration of the substrate 130 .

At block 370 , the method 300 optionally includes transporting the substrate 130 out of the enclosure 120 using the substrate transport 210 . The substrate 130 may be carried away from the housing 120 on a substrate support 140 , in particular a substrate carrier. The housing 120 may have at least one opening through which the substrate transporter 210 may transport the substrate 130 . The at least one opening may be a valve or a door and may be connected to the load lock chamber. The at least one opening may be the same opening through which the substrate is transported into the enclosure 120 by the substrate transporter 210 when the substrate 130 is provided at block 320 . Alternatively, in an in-line processing arrangement, at least one opening for transporting substrates out of enclosure 120 may be positioned opposite at least one opening for transporting substrates into enclosure 120 .

While the foregoing is directed to embodiments of the disclosure, other and further embodiments of the disclosure can be devised without departing from the basic scope of the disclosure, and the scope of the disclosure is determined by the claims below.

100: equipment 110: laser source 120: housing 123: bottom plate 124: top plate 125: wall 127: cover assembly 128: shield 129: sliding seal 130: base plate 131: upper surface 132: lower surface 133: blind hole 134: Dust 140: Substrate Support 150: Dust Collector Device 151: Blower Device 152: Vacuum Device 200: Substrate Handling System 210: Substrate Transporter 300: Method 310: Block 320: Block 330: Block 340: Block 350: Optional Block 360: box 370: box 380: box 121a: first gas inlet 121a, b: gas inlet 121b: second gas inlet 122a: first gas outlet 122a, b: gas outlet 122b: second gas outlet 126a: first mine Laser opening 126b: Second laser opening 130a: Substrate 130b: Processed substrate D: Detailed view F: Air flow F ₁ : First air flow F ₂ : Second air flow P: Lift V: Vibration force x: Direction y: Direction z :direction

In order that the manner in which the above recited features of the present disclosure can be understood in detail, a more particular description of the disclosure, briefly summarized above, can be had by reference to the Examples. The accompanying drawings relate to embodiments of the present disclosure and are described below: Figures 1A to 1B show schematic side views of a dust extraction device according to the prior art. Figure 2 shows a schematic side view of an apparatus for laser processing a substrate according to embodiments described herein. Figure 3 shows a schematic front view of an apparatus for laser processing a substrate according to embodiments described herein. Figure 4 shows a schematic top view of a substrate processing system according to embodiments described herein. Figure 5 illustrates a method for laser processing a substrate according to embodiments described herein.

Domestic deposit information (please note in order of depositor, date, and number) none Overseas storage information (please note in order of storage country, institution, date, and number) none

100: Equipment

110: Laser source

120: Shell

123: Bottom plate

124: top plate

125: wall

127: cover assembly

128: shield

129: sliding seal

130: Substrate

131: upper surface

132: lower surface

140: substrate support

121a: first gas inlet

121b: Second gas inlet

122a: first gas outlet

122b: Second gas outlet

126a: the first laser opening

126b: Second laser opening

x: direction

y: direction

F ₁ : first airflow

F ₂ : Second air flow

Claims (19)

An apparatus (100) for laser processing a substrate (130), the apparatus comprising: a laser source (110) configured to irradiate a surface of the substrate (130); and a housing (120), Surrounding the substrate (130), the housing (120) has: a first gas inlet (121a) and a first gas outlet (122a), configured to provide over an upper surface (131) of the substrate (130) a first gas flow (F ₁ ); and a second gas inlet (121b) and a second gas outlet (122b) configured to provide a second gas flow ( F ₂ ), wherein the substrate (130) remains fixed relative to the housing (120) during the irradiation of the surface of the substrate (130). The apparatus (100) of claim 1, wherein at least one of the first air flow (F ₁ ) and the second air flow (F ₂ ) is a substantially laminar air flow. The device (100) as claimed in claim 1, wherein the housing (120) includes a bottom plate (123), a top plate (124) and at least one wall (125), the at least one wall (125) has the first and A second gas inlet (121, 121b) and the first and second gas outlets (122a, 122b). The apparatus (100) as claimed in item 3, wherein the first air flow (F ₁ ) flows between the top plate (124) and the upper surface (131) of the substrate (130); and the second air flow ( F ₂ ) flows between the bottom plate (123) and the lower surface (132) of the substrate (130). The device (100) of claim 3, wherein the top plate (124) includes a first laser opening (126a), and the housing (120) further includes: a cover assembly (127) movable relative to the top plate (124), the cover assembly (127) having a second laser opening (126b); and a sliding seal (129), between the top plate (124) and the cover assembly (127), Wherein the laser source (110) is configured to irradiate a surface of the substrate (130) through the first laser opening (126a) and the second laser opening (126b). The apparatus (100) of claim 5, wherein the cover assembly (127) further comprises a shield (128), and the laser source (110) is provided within the shield (128). The device (100) according to claim 4, wherein the top plate (124) includes a first laser opening (126a), and the housing (120) further includes: a cover assembly (127) movable relative to the top plate (124), the cover assembly (127) having a second laser opening (126b); and a sliding seal (129), between the top plate (124) and the cover assembly (127), Wherein the laser source (110) is configured to irradiate a surface of the substrate (130) through the first laser opening (126a) and the second laser opening (126b). The apparatus (100) of claim 7, wherein the cover assembly (127) further comprises a shield (128), and the laser source (110) is provided within the shield (128). The device (100) of claim 1, wherein a direction of the first airflow ( _F1 ) is parallel to a direction of the second airflow ( _F2 ). The device (100) as described in Claim 1, further comprising: at least one vacuum device (152) in fluid communication with the first gas outlet (122a) and/or the second gas outlet (122b); and/or At least one blower device (151) is in fluid communication with the first gas inlet (121a) and/or the second gas inlet (121b). The apparatus (100) of claim 1, further comprising a substrate support (140) configured to support the substrate (130). The apparatus (100) of claim 1, wherein the laser processing includes at least one selected from the group consisting of laser drilling, laser milling, and laser cutting. The apparatus (100) of claim 1, wherein the substrate (130) is a crystalline silicon (c-Si) wafer. A substrate processing system (200), comprising: The apparatus (100) for laser processing as claimed in any one of claims 1 to 13; and A substrate transport (210) configured for transporting substrates into and out of the apparatus (100). The substrate processing system (200) as claimed in claim 14, further comprising: a substrate aligner configured to align the substrate (130) relative to the laser source 110; and a vision system configured to evaluate the position of the substrate (130) relative to the laser source 110, Wherein the vision system includes at least one selected from the group consisting of a camera and an illumination device. A method for laser processing a substrate (130), comprising the steps of: providing the substrate (130) inside a casing (120); providing a first a gas flow (F ₁ ) and a second gas flow (F ₂ ) below a lower surface (132) of the substrate (130); and irradiating a surface of the substrate (130) by a laser source (110), Wherein the substrate (130) is maintained in a fixed position relative to the housing (120) during the irradiation of the surface of the substrate (130). The method of claim 16, wherein at least one of the first gas flow (F ₁ ) and the second gas flow (F ₂ ) is a substantially laminar gas flow. The method of claim 16, wherein the laser processing includes at least one selected from the group consisting of laser drilling, laser milling, and laser cutting. The method of any one of claims 16-18, wherein the substrate (130) is a crystalline silicon (c-Si) wafer.

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