TW202238861A - Manufacturing method of package device especially dividing and individualizing the substrate on which device chips are placed - Google Patents

Abstract

Provided is a package device manufacturing method capable of suppressing depth variation in a chip mounting region within a substrate surface. The package device manufacturing method includes: a groove forming step 101 for forming, on a substrate having a plurality of intersecting predetermined dividing lines, a groove for accommodating a device in a region sandwiched by adjacent predetermined dividing lines; a device chip arranging step 102 for adhering and arranging the device chip in the groove formed in the groove forming step 101; and a dividing step 104 for dividing and individualizing the substrate on which device chips are placed in grooves along predetermined dividing lines.

Description

Manufacturing method of packaged components

The invention relates to a manufacturing method of a packaging component.

Along with miniaturization and high-integration of semiconductor wafers, the development of packaging technology for element wafers continues. Among them, the mounting method of placing multiple semiconductor chips on the wafer and sealing them with a sealing material (sealing resin) for semiconductors, forming a redistribution layer (Redistribution Layer: RDL) and performing singulation, because it does not require The packaging substrate required for general packaging makes it possible to reduce the thickness and cost of the module and shorten the wiring distance, and it is attracting attention as a next-generation technology.

However, when the element wafer is covered and sealed with a sealing resin, the entire substrate is warped due to the shrinkage of the sealing resin, and subsequent film formation, electrode formation, thinning, etc. become difficult. In response to this problem, in order to reduce the amount of sealing resin and suppress warpage, there have been proposed techniques for disposing members for filling the gap in areas other than the area where the chip is mounted (see Patent Document 1), providing a recess on the substrate and The technique of disposing wafers in such recesses (refer to Patent Document 2) and the like. [Prior art literature] [Patent Document]

[Patent Document 1] Japanese Patent Laid-Open No. 2020-92147 [Patent Document 2] Japanese National Publication No. 2019-512168

[Problems to be Solved by the Invention] However, although the gap-filling components or the recesses of the substrate used in the above-mentioned manufacturing process are generally formed by dry etching, in order to perform etching, in addition to forming a mask, it is also necessary to introduce removal equipment, which is costly. The problem.

In addition, TTV (Total Thickness Variation) in the bottom surface of the recess formed by etching is large, and there is a concern about the height variation of the chip when a plurality of chips are mounted inside the recess.

In addition, there may be a loading effect (loading effect) in which the etching rate in the plane changes depending on the processing pattern at the time of etching, and the difference in depth between the central part and the peripheral part may occur in the subsequent step. Defects may occur in the formation of through-silicon vias (TSVs) and the formation of redistribution layers.

The present invention was made in view of this problem, and an object of the present invention is to provide a method of manufacturing a package device that can suppress the depth variation of the chip mounting region within the substrate surface.

[Technical means to solve the problem] In order to solve the above-mentioned problems and achieve the object, the method of manufacturing a package element of the present invention is a method of manufacturing a package element, which is characterized in that it includes: a step of forming a groove in which a substrate having a plurality of intersecting dividing lines is formed on the corresponding substrate. The region sandwiched by the adjacent dividing line forms a groove capable of accommodating the element chip; the element chip disposing step, which connects and arranges the element chip in the groove formed by the groove forming step; and the dividing step, which will The substrate on which the element wafer is arranged in the groove is divided along the planned division line and singulated.

Also, in the manufacturing method of the package component of the present invention, the planned dividing line may include: a first planned dividing line extending in a direction parallel to the first direction; and a second planned dividing line extending in a direction parallel to the first direction. The second direction intersecting the direction extends, and the groove forming step can make the cutting blade abut against the substrate while rotating, and move the cutting blade and the substrate relatively in a direction parallel to the first planned dividing line, Thereby, grooves are formed in regions sandwiched by the adjacent first planned division lines.

In addition, in the manufacturing method of the package element of the present invention, the groove forming step can make the cutting blade abut against the substrate while rotating, and make the cutting blade and the substrate in a direction parallel to the second planned dividing line. Relatively moving, thereby further forming grooves in the region sandwiched by the adjacent second dividing line.

Furthermore, the manufacturing method of the packaged element of the present invention may include a resin sealing step of supplying a sealing resin to the substrate and coating the element wafer with the sealing resin after the element wafer disposing step.

Furthermore, the manufacturing method of the packaged element of the present invention may include: a sealing resin grinding step of grinding and thinning the sealing resin covering the element wafer after the resin sealing step.

Furthermore, the manufacturing method of the packaged element of the present invention may include: a lamination step in which, after the step of grinding the sealing film resin, the element wafer is bonded to the groove and covered with the sealing film resin, and the sealing film This substrate in the state where the resin is thinned is laminated with other substrates.

In addition, in the manufacturing method of the package device of the present invention, the dividing step may include: a cutting step of cutting the substrate along the planned dividing line by moving a cutting blade relative to the substrate.

[Efficacy of the invention] The present invention can suppress the depth deviation of the chip mounting area within the substrate surface.

Modes (embodiments) for implementing the present invention will be described in detail with reference to the drawings. The present invention is not limited by the contents described in the following embodiments. In addition, the constituent elements described below include those that are easily assumed by those skilled in the art and those that are substantially the same. In addition, the structure described below can be combined suitably. In addition, various omissions, substitutions, or changes in configuration can be made without departing from the gist of the present invention.

[implementation mode] The manufacturing method of the package element 1 which concerns on embodiment of this invention is demonstrated based on drawing. First, the configuration of the package component 1 of the embodiment will be described. FIG. 1 is a cross-sectional view schematically showing a configuration example of a package device 1 according to the embodiment. As shown in FIG. 1 , a package element 1 includes a substrate 2 , an element wafer 3 , and a sealing resin 4 .

The substrate 2 shown in FIG. 1 is made of, for example, silicon, sapphire (Al ₂ O ₃ ), gallium arsenide (GaAs), or silicon carbide (SiC). The substrate 2 includes a groove 6 formed concavely from the front surface 5 .

The element chip 3 is arranged inside the groove 6 formed in the substrate 2 . The element wafer 3 is adhered to the bottom surface 7 of the groove 6 by, for example, pasting or applying an adhesive agent on the element wafer 3 or an adhesive agent applied on the bottom surface 7 of the groove 6 . The element wafer 3 is provided with electrodes. The element chip 3 is, for example, an integrated circuit such as IC or LSI, an image sensor such as a CCD (Charge Coupled Device) or a CMOS (Complementary Metal Oxide Semiconductor), or a passive element such as a capacitor or a resistor.

Sealing resin 4 is made of epoxy resin, silicone resin, urethane resin, unsaturated polyester resin, acrylic urethane resin or polyimide resin It is composed of insulating synthetic resin. The sealing resin 4 covers the element wafer 3 . In the embodiment, the sealing resin 4 is filled between the side surface of the element chip 3 in the groove 6 and the substrate 2 , and covers the front surface 5 and the groove 6 of the substrate 2 as well as the front surface 8 and the side surface of the element chip 3 . The sealing resin 4 is made of thermosetting resin in the embodiment. The sealing resin 4 is supplied to the board|substrate 2 in the state heated and softened, and it hardens, and covers the element chip 3.

Next, a method of manufacturing the package device 1 of the embodiment will be described. FIG. 2 is a flow chart showing the flow of the manufacturing method of the package device 1 according to the embodiment. The manufacturing method of the packaged device 1 of the embodiment is as shown in FIG. 2 , and includes: a groove forming step 101 , a device wafer disposing step 102 , a resin sealing step 103 , and a dividing step 104 .

(groove forming step 101) FIG. 3 is a perspective view showing an example of the wafer 10 to be processed in the groove forming step 101 shown in FIG. 2 . As shown in FIG. 3 , the wafer 10 is a wafer such as a disc-shaped semiconductor wafer or an optical element wafer including the substrate 2 . The wafer 10 has a diameter of 300 mm in the embodiment. The wafer 10 (substrate 2 ) has a plurality of intersecting planned dividing lines 20 and a plurality of regions 23 sandwiched by adjacent dividing lines 20 on the front surface 5 .

The planned dividing line 20 includes the first planned dividing line 21 and the second planned dividing line 22 in the embodiment. The first planned dividing line 21 is the planned dividing line 20 extending in a direction parallel to the first direction 11 . The first direction 11 is a direction within the horizontal front side 5 of the wafer 10 .

The second planned dividing line 22 is the planned dividing line 20 extending in a direction parallel to the second direction 12 . The second direction 12 is a direction intersecting the first direction 11 within the horizontal front side 5 of the wafer 10 . The second direction 12 is a direction perpendicular to the first direction 11 in the embodiment. That is, the lines to divide 20 are set in a grid pattern by the first lines to divide 21 and the second lines to divide 22 on the front surface 5 of the wafer 10 .

The area 23 is divided by the planned division lines 20 set in a grid pattern. In an element wafer arrangement step 102 described later, the element wafer 3 is arranged in each region 23 (see FIG. 1 ). In the dividing step 104 described later, the wafer 10 is divided along the planned dividing line 20, and each region 23 having one element wafer 3 is singulated to manufacture packaged elements 1 (see FIG. 1 ). . In the embodiment, the singulated package element 1 is a square with a side of 7 mm. In addition, although the package element 1 has a square shape in the embodiment, it may also be a rectangle.

FIG. 4 is a perspective view showing an example of the groove forming step 101 shown in FIG. 2 . FIG. 5 is a top view of the wafer 10 in a state of the groove forming step 101 shown in FIG. 2 . FIG. 6 is a plan view of the wafer 10 in a state after FIG. 5 of the trench forming step 101 shown in FIG. 2 . The groove forming step 101 is a step of forming the groove 6 capable of accommodating the element wafer 3 in the region 23 sandwiched by the adjacent dividing lines 20 . In addition, in the embodiment, the groove 61 having a depth of 100 μm and a width of 3 mm is formed in the wafer 10 . The groove 6 includes: a groove 61 extending in a direction parallel to the first direction 11 ; and a groove 62 extending in a direction parallel to the second direction 12 . Hereinafter, the groove 62 shown in FIG. 6 is formed after the groove 61 shown in FIGS. 5 and 6 is formed, but only the groove 61 may be formed.

In the groove forming step 101 shown in FIG. 4 , grooves 6 are formed on the front surface 5 of the wafer 10 by cutting with the cutting device 30 . In the following description, the X-axis direction is one of the directions in the horizontal plane. The Y-axis direction is a direction perpendicular to the X-axis direction in the horizontal plane. In the cutting device 30 of the embodiment, the machining feeding direction is the X-axis direction, and the indexing feeding direction is the Y-axis direction. The cutting device 30 includes a chuck table 31 having a holding surface 32 , a cutting unit 33 , a moving unit (not shown) for relatively moving the chuck table 31 and the cutting unit 33 , and an imaging unit (not shown).

The cutting unit 33 includes a disc-shaped cutting blade 34 , a main shaft 35 serving as a rotation axis of the cutting blade 34 , and a mounting flange 36 attached to the main shaft 35 to fix the cutting blade 34 (see FIG. 11 ). The dicing blade 34 and the spindle 35 have rotation axes parallel to the holding surface 32 of the chuck table 31 holding the wafer 10 to be diced. The cutting blade 34 is mounted on the front end of the main shaft 35 .

In the groove forming step 101 shown in FIG. 4 , first, the rear surface 9 side of the wafer 10 is sucked and held on the holding surface 32 of the chuck table 31 . In addition, the wafer 10 can also be supported from the rear surface 9 side by an adhesive film 90 (see FIG. 8 etc.) attached to the ring frame, and held on the holding surface of the chuck table 31 through the adhesive film 90 32.

In the groove forming step 101 shown in FIG. 4 , next, alignment between the dicing unit 33 and the wafer 10 is performed. Specifically, a not-shown moving unit moves the chuck table 31 to a processing area below the dicing unit 33 , and a not-shown imaging unit photographs and aligns the wafer 10 . Thereby, the first direction 11 of the wafer 10 is aligned with the direction parallel to the processing feed direction, that is, the X-axis direction, and the processing point pair of the dicing blade 34 is sandwiched by the adjacent first planned dividing line 21. area 23.

In the groove forming step 101 shown in FIG. 4 , next, the supply of dicing water is started toward the front surface 5 side of the wafer 10 , and the dicing blade 34 is brought into contact with the wafer 10 while rotating. Next, by means of a moving unit not shown, the chuck table 31 and the cutting blade 34 of the cutting unit 33 are relatively moved along the region 23 sandwiched by the adjacent first planned dividing line 21, while cutting into the crystal. The circle 10 is formed until the groove 61 is formed with a predetermined amount of incision (in the embodiment, a depth of 100 μm). Thereby, as shown in FIG. 5 , the groove 61 extending in a direction parallel to the first direction 11 is formed in the region 23 sandwiched by the first planned division lines 21 .

In the groove forming step 101, next, the second direction 12 of the wafer 10 is aligned with the direction parallel to the processing feed direction, that is, the X-axis direction, and the processing point pair of the dicing blade 34 is positioned at the adjacent second direction. The area 23 sandwiched by the two planned dividing lines 22. Next, the supply of dicing water is started toward the front surface 5 side of the wafer 10 , and the dicing blade 34 is brought into contact with the wafer 10 while being rotated. Next, by means of a moving unit not shown, the chuck table 31 and the dicing blade 34 of the dicing unit 33 are relatively moved along the region 23 sandwiched by the adjacent second planned dividing lines 22, while cutting into the crystal. The circle 10 is formed until the groove 62 with a predetermined incision amount (100 μm in depth in the embodiment) is formed. Thereby, as shown in FIG. 6 , the groove 62 extending in the direction parallel to the second direction 12 is formed in the region 23 sandwiched by the second planned division lines 22 .

In the case of forming the groove 6 by the cutting device 30 in the groove forming step 101 shown in FIG. Cutting a path as wide as the width of the cutting blade 34.

The groove forming step 101 may also form grooves 6 on the front surface 5 of the wafer 10 by ablation processing performed by the laser processing device 40 . FIG. 7 is a perspective view showing another example of the groove forming step 101 shown in FIG. 2 . In the laser processing device 40 of the embodiment, the processing feeding direction is the X-axis direction, and the indexing feeding direction is the Y-axis direction. The laser processing device 40 includes: a chuck table 41 having a holding surface 42 , a laser beam irradiation unit 43 , a movement unit (not shown) that moves the chuck table 41 relative to the laser beam irradiation unit 43 , and an imaging unit 44 .

In the groove forming step 101 shown in FIG. 7 , first, the rear surface 9 side of the wafer 10 is sucked and held on the holding surface 42 of the chuck table 41 . Next, alignment between the laser beam irradiation unit 43 and the wafer 10 is performed. Specifically, a not-shown moving unit moves the chuck table 41 to a processing position, and a not-shown imaging unit images the wafer 10 for alignment. Thereby, the first direction 11 of the wafer 10 is aligned with the direction parallel to the processing feed direction, that is, the X-axis direction, and the irradiation part of the laser beam irradiation unit 43 is aligned with the adjacent first planned dividing line. 21 clamped area 23.

In the groove forming step 101 shown in FIG. 7 , next, by moving the chuck table 41 relatively to the laser beam irradiation unit 43 by a moving unit not shown, the focused point is positioned on the wafer. The front side 5 of the circle 10 or the vicinity of the front side 5 is irradiated with a laser beam 45 . The laser beam 45 is a laser beam having an absorbing wavelength to the substrate 2 . In the groove forming step 101, by irradiating the laser beam 45 whose focal point has been positioned at or near the front surface 5 of the wafer 10 along the region 23 sandwiched by the adjacent first planned division lines 21, On the other hand, a groove 61 extending in a direction parallel to the first direction 11 is formed in the region 23 sandwiched by the first planned division lines 21 .

Even in the groove forming step 101 shown in FIG. 7 , the groove 62 extending in a direction parallel to the second direction 12 may be formed after the groove 61 is formed. That is, the second direction 12 of the wafer 10 is aligned with the direction parallel to the processing feed direction, that is, the X-axis direction, and the irradiation part of the laser beam irradiation unit 43 is aligned with the adjacent second planned dividing line. The area 23 clamped by 22. The chuck table 41 is relatively moved relative to the laser beam irradiation unit 43 by a moving unit not shown, and the laser beam 45 is irradiated while positioning the spot on or near the front side 5 of the wafer 10. . In groove forming step 101 shown in FIG. The laser beam 45 forms a groove 62 extending in a direction parallel to the second direction 12 in the region 23 sandwiched by the second planned division lines 22 .

(Element chip allocation step 102) FIG. 8 is a side view of the main part of the wafer 10 showing a state of the device chip placement step 102 shown in FIG. 2 in a partial cross section. The element chip arrangement step 102 is to attach and arrange the element chip 3 in the groove 6 formed in the groove forming step 101 . In the element wafer arrangement step 102 , for example, firstly, an adhesive is coated on the back surface of the element wafer 3 . Next, the back side of the element wafer 3 on which the adhesive has been applied is aligned with the bottom surface 7 of the groove 6 and bonded.

In the device chip arrangement step 102 , an adhesive sheet may also be pasted on the back surface of the device chip 3 instead of coating an adhesive. In addition, in the element wafer arrangement step 102 , for example, the adhesive may be applied to the bottom surface 7 of the groove 6 instead of the back surface of the element wafer 3 .

(resin sealing film step 103) FIG. 9 is a side view showing a state of the resin sealing step 103 shown in FIG. 2 in a partial section. FIG. 10 is a partial cross-sectional side view of the main part of the wafer 10 in a state after FIG. 9 of the resin sealing step 103 shown in FIG. 2 . The resin sealing step 103 is a step of supplying the sealing resin 4 to the wafer 10 (substrate 2 ) and covering the element chip 3 with the sealing resin 4 after the element chip disposing step 102 .

In the resin sealing step 103 shown in FIGS. 9 and 10 , the element wafer 3 is covered with the sealing resin 4 by the compression molding machine 50 . The compression molding machine 50 includes an upper mold 51 having a holding surface 52 , and a lower mold 53 having a cavity 54 facing the holding surface 52 .

As shown in FIG. 9 , in the resin sealing step 103 , first, the back surface 9 side of the wafer 10 is fixed to the holding surface 52 of the upper mold 51 . In the embodiment, the wafer 10 is fixed on the holding surface 52 of the upper mold 51 through the adhesive film 90 supporting the wafer 10 . Next, a predetermined amount of liquid sealing resin 4 is filled into the cavity 54 of the lower mold 53 . Next, the upper mold 51 is moved toward the lower mold 53 to push the front side 5 of the wafer 10 against the sealing resin 4 in the cavity 54 .

As shown in FIG. 10 , by pushing the front side 5 of the wafer 10 against the sealing resin 4 in the cavity 54 , the liquid sealing resin 4 enters the component chip from the front side 5 of the wafer 10 Between the groove 6 of 3 and the element wafer 3, the space on the side surface of the element wafer 3 is filled. Furthermore, the liquid sealing resin 4 is compressed and hardened between the cavity 54 and the front surface 5 of the wafer 10 by the pressure applied from the upper mold 51, and is fixed in a state of covering the element wafer 3 .

(Split step 104) FIG. 11 is a side view of the main part of the wafer showing a state of the dividing step 104 shown in FIG. 2 in partial cross section. The dividing step 104 is a step of dividing and singulating the wafer 10 (substrate 2 ) on which the element chips 3 are placed in the grooves 6 along the planned dividing lines 20 .

In the dividing step 104 shown in FIG. 11 , the wafer 10 is divided by the dicing process performed by the dicing device 30 . That is, the dividing step 104 includes a dicing step of dicing the wafer 10 along the dividing line 20 by moving the dicing blade 34 relative to the substrate 2 . The cutting device 30 may also be the same or of the same type as the device used in the groove forming step 101 shown in FIG. 4 . In the dividing step 104, a cutting blade 34 having a narrower width than the groove 6 is used.

In the dividing step 104 , first, the rear surface 9 side of the wafer 10 is sucked and held on the holding surface 32 of the chuck table 31 . In addition, the wafer 10 is preferably supported from the rear surface 9 side by an adhesive film 90 attached to the ring frame, and is held on the holding surface 32 of the chuck table 31 through the adhesive film 90 .

In the dividing step 104 , next, alignment between the cutting unit 33 and the wafer 10 is performed. Specifically, the moving unit not shown moves the chuck table 31 to the processing area below the dicing unit 33, and the wafer 10 is photographed and aligned by an imaging unit not shown, whereby the dicing blade 34 The pair of processing points is located on the planned dividing line 20 of the wafer 10 .

In the dividing step 104 , next, the supply of dicing water is started toward the front surface 5 side of the wafer 10 (substrate 2 ), and the dicing blade 34 is brought into contact with the wafer 10 while being rotated. Next, the chuck table 31 and the dicing blade 34 of the dicing unit 33 are moved relative to each other along the planned dividing line 20 by a moving unit not shown until they reach the rear surface 9 side of the wafer 10, and Wafer 10 is divided along planned dividing lines 20 .

By dividing the wafer 10 (substrate 2 ) along all the planned dividing lines 20 , the wafer 10 is singulated into individual element chips 3 , and packaged elements 1 are manufactured. After the wafer 10 is divided into packaged components 1 , for example, in a picking step, a known picker is used to pick up the packaged components 1 from the adhesive film 90 .

As described above, in the manufacturing method of the packaged element 1 according to the embodiment, the element chip 3 is mounted in the groove 6 formed in the wafer 10 (substrate 2 ). As a method of forming the groove 6, by implementing cutting by the cutting device 30, ablation by the laser processing device 40, etc., the TTV can be improved compared to etching, and furthermore, the number of holes on the substrate 2 surface can be reduced. The depth deviation of the mounting area of the component chip 3 within. In addition, since there is no need to form an etching mask, the manufacturing process can be reduced, thereby shortening the processing time, reducing costs, man-hours, and the like.

In the above-mentioned embodiment, in the groove forming step 101 performed by the cutting device 30 shown in FIG. 4 , for example, if 44 lines are processed at 30 mm/sec, the required time is about 10 minutes. On the other hand, in the case of forming the groove 6 with a depth of 100 μm by etching, for example, the etching rate is 7 μm/min, and the required time is about 15 minutes. In etching, the wider and deeper the removal area is, the longer the processing time will be. However, in the groove processing by dicing, the processing time will not change even if the depth changes. Therefore, compared with etching, the groove forming step 101 of the embodiment can further shorten the processing time.

In addition, the present invention is not limited to the above-described embodiments. That is, various modifications and implementations are possible without departing from the gist of the present invention.

For example, in the groove forming step 101 , when the groove 6 is formed by the laser beam 45 , the laser processing device 40 may include an optical system that scans the laser beam 45 with a polygon mirror. As a result, the TTV in the bottom 7 of the groove 6 can be raised.

In addition, in the groove forming step 101, one groove 6 is formed in the region 23 sandwiched by the adjacent planned division lines 20 in the embodiment, but in the present disclosure, it may be formed in the region 23 sandwiched by the adjacent planned division lines 20. The area 23 clamped by the wire 20 forms a plurality of grooves 6 . In this case, the package elements 1 divided and singulated in the dividing step 104 each have a plurality of grooves 6 . In this case, for example, it is desirable to arrange at least one element wafer 3 in each groove 6 .

In addition, in the element chip arrangement step 102, in the embodiment shown in FIG. In the present invention, the element wafer 3 can also be bonded by covering the wafer 10 from above.

In addition, in the resin sealing step 103, in the embodiment, a predetermined amount of liquid sealing resin 4 is filled into the cavity 54 of the lower mold 53, and the upper mold 51 is moved toward the lower mold 53, and push the front side 5 of the wafer 10 against the sealing resin 4 in the cavity 54 , but the present invention is not limited thereto. For example, a predetermined amount of granular sealing resin 4 can also be placed into the cavity 54 of the lower mold 53, and after the sealing resin 4 in the cavity 54 is melted, the upper mold 51 is moved toward the direction of the lower mold 53 , and push the front side 5 of the wafer 10 against the sealing resin 4 in the cavity 54 . In addition, it is not limited to the so-called face-down method as described above, and it is also possible to place the sealing film resin on the state where the wafer 10 has been placed on the flat lower mold. 4 is supplied to the front side 5 of the wafer 10, and the upper mold with the cavity facing the front side 5 of the wafer 10 is moved from above and pushed against the lower mold side, that is, by the so-called face-up In this way, the sealing resin 4 is compressed and hardened.

In addition, in the dividing step 104, in the embodiment shown in FIG. 11, the substrate 2 is divided by complete cutting by the dicing blade 34, but in the present invention, the wafer 10 may be ground after the half cutting. The back surface 9 of the substrate 2 is divided. In addition, instead of forming an incision by half cutting by the dicing blade 34 , a modified layer serving as a starting point for division may be formed by a laser beam penetrating the wafer 10 .

That is, the dividing step 104 may include a grinding step of grinding and thinning the back surface 9 side of the wafer 10 (substrate 2 ). In addition, a grinding step of grinding and thinning the back surface 9 side of the wafer 10 (substrate 2 ) may be included before the dividing step 104 is performed. The grinding step may be performed before or after the groove forming step 101 is performed.

〔Modification〕 Next, a method of manufacturing package element 1 according to a modified example will be described. FIG. 12 is a flow chart showing the flow of a method of manufacturing a packaged device according to a modified example. As shown in FIG. 12 , the manufacturing method of the packaged element 1 according to the modified example includes: a groove forming step 201, a device chip arrangement step 202, a resin sealing step 203, a sealing resin grinding step 204, a lamination step 205, and a division step. 206. In addition, the groove forming step 201, the element chip arrangement step 202, the resin sealing step 203, and the dividing step 206 of the modified example are different from the groove forming step 101, the element chip arrangement step 102, the resin sealing step 103, and the dividing step of the embodiment. Step 104 is the same, so the description is omitted.

(Sealing resin grinding step 204) FIG. 13 is a side view showing an example of the sealing film resin grinding step 204 shown in FIG. 12 . The sealing resin grinding step 204 is a step of grinding and thinning the sealing resin 4 covering the device wafer 3 after the resin sealing step 203 .

In the sealing resin grinding step 204 shown in FIG. 13 , the sealing resin 4 covering the front surface 5 of the wafer 10 (substrate 2 ) is ground by the grinding process performed by the grinding device 70 . The grinding device 70 includes: a chuck table 71 having a holding surface 72 ; and a grinding unit 73 . The grinding unit 73 includes a main shaft 74 which is a rotating shaft member, a wheel base 75 attached to the lower end of the main shaft 74 , and a grinding whetstone 76 attached to the lower surface of the wheel base 75 . The wheel base 75 rotates on a rotation axis parallel to the axis of the chuck table 71 .

In the sealing resin grinding step 204 , first, the rear surface 9 side of the wafer 10 is sucked and held on the holding surface 72 of the chuck table 71 . Next, the wheel base 75 is rotated around the axis while the chuck table 71 is rotated around the axis. By supplying grinding water to the processing position and bringing the grinding whetstone 76 mounted on the lower surface of the wheel base 75 close to the chuck table 71 at a predetermined feed speed, the front surface of the wafer 10 is coated with the grinding whetstone 76 The sealing resin 4 of 5 is ground from the front side. Thereby, the sealing resin 4 is thinned.

In addition, the substrate 2 may be thinned by grinding the back surface 9 side of the wafer 10 (substrate 2 ) after the sealing resin grinding step 204 and before the later-described lamination step 205 . In this case, the back side 9 side of the wafer 10 is ground while the front side of the ground sealing resin 4 is sucked and held on the holding surface 72 of the chuck table 71 .

(Lamination step 205) The lamination step 205 is the following step: After the sealing resin grinding step 204, the substrate 2 that has been attached to the element wafer 3 in the groove 6 and has been covered with the sealing resin 4 and has been thinned, that is, The aforementioned wafer 10 is laminated with other substrates. In the present invention, other wafers having the same configuration as wafer 10 may be laminated on wafer 10 as another substrate, or a carrier wafer or the like may be laminated. When the wafer 10 is laminated (attached) to other substrates, that is, the carrier wafer, it is preferable to form through-silicon holes (TSVs) on the wafer 10 and the carrier wafer in a known method after the lamination (attached). cloth layer etc.

Thus, the manufacturing method of the packaged element of this invention can also be applied to the packaged element of a laminated board|substrate and an element chip.

1: Packaging components 2: Substrate 3: Component wafer 4: Sealing resin 6,61,62: Slots 10:Wafer 11: First Direction 12: Second direction 20:Split scheduled line 21: The first dividing line 22: The second division line 23: area 34: Cutting blade 101, 201: groove forming step 102, 202: Component chip configuration steps 103,203: resin sealing step 104, 206: Segmentation steps 204: Sealing resin grinding step 205:Lamination step

FIG. 1 is a cross-sectional view schematically showing a configuration example of a package device according to an embodiment. FIG. 2 is a flow chart showing the flow of the manufacturing method of the packaged device of the embodiment. FIG. 3 is a perspective view showing an example of a wafer to be processed in the groove forming step shown in FIG. 2 . Fig. 4 is a perspective view showing an example of the groove forming step shown in Fig. 2 . FIG. 5 is a top view of the wafer showing one state of the groove forming step shown in FIG. 2 . FIG. 6 is a plan view of the wafer in a state after FIG. 5 showing the groove forming step shown in FIG. 2 . Fig. 7 is a perspective view showing another example of the groove forming step shown in Fig. 2 . FIG. 8 is a side view of a main part of a wafer showing a state of the device chip placement step shown in FIG. 2 in a partial cross section. Fig. 9 is a side view showing a state of the resin sealing step shown in Fig. 2 in a partial section. FIG. 10 is a partial cross-sectional side view of the main part of the wafer in a state after FIG. 9 showing the resin sealing step shown in FIG. 2 . FIG. 11 is a side view of a main part of the wafer showing a state of the dividing step shown in FIG. 2 in partial cross section. FIG. 12 is a flow chart showing the flow of a method of manufacturing a packaged device according to a modified example. Fig. 13 is a side view showing an example of the sealing resin grinding step shown in Fig. 12 .

101: Groove forming step

102: Component Chip Configuration Steps

103: Resin film sealing step

104:Segmentation step

Claims (7)

A method of manufacturing a packaged component, characterized in that: A groove forming step, which, for the substrate having a plurality of intersecting planned dividing lines, forms a groove capable of accommodating element wafers in a region sandwiched by adjacent planned dividing lines; an element wafer disposing step of adhering and disposing an element wafer in the groove formed by the groove forming step; and A dividing step of dividing and singulating the substrate on which the element chip is placed in the groove along the dividing line. The method of manufacturing a packaged component according to claim 1, wherein the planned dividing line includes: a first planned dividing line extending in a direction parallel to the first direction; and a second planned dividing line extending in a direction parallel to the first direction The second direction of the cross extends, In the groove forming step, the dicing blade is rotated while abutting against the substrate, and the dicing blade and the substrate are relatively moved in a direction parallel to the first planned dividing line, whereby the adjacent first The area sandwiched by the dividing predetermined line forms a groove. The method for manufacturing packaged components according to claim 2, wherein the groove forming step is to make the cutting blade abut against the substrate while rotating, and make the cutting blade and the substrate in a direction parallel to the second planned dividing line Relatively moving, thereby further forming grooves in the region sandwiched by the adjacent second dividing line. The method for manufacturing a packaged component according to any one of Claims 1 to 3, wherein: The resin sealing step is to supply the substrate with a sealing resin and coat the element chip with the sealing resin after the element chip arrangement step. The method for manufacturing a packaged component as claimed in item 4, wherein: The sealing resin grinding step, after the resin sealing step, grinds and thins the sealing resin covering the element wafer. The method for manufacturing a packaged component as claimed in item 5, wherein: a lamination step of laminating the substrate in a state where the element wafer is bonded to the groove and covered with the sealing resin and the sealing resin has been thinned with other substrates after the sealing resin grinding step product. The method for manufacturing a packaged component according to any one of claims 1 to 3, wherein the dividing step includes: a cutting step of cutting the substrate along the planned dividing line by moving the cutting blade relative to the substrate .

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