TW202238842A - 晶粒 - Google Patents
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- TW202238842A TW202238842A TW110148292A TW110148292A TW202238842A TW 202238842 A TW202238842 A TW 202238842A TW 110148292 A TW110148292 A TW 110148292A TW 110148292 A TW110148292 A TW 110148292A TW 202238842 A TW202238842 A TW 202238842A
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- 239000010410 layer Substances 0.000 claims abstract description 226
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- 229910052802 copper Inorganic materials 0.000 claims description 24
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Abstract
晶粒包含半導體基板、介電結構、互連結構、矽穿孔結構與矽穿孔阻障結構。半導體基板具有前側與相對的背側。介電結構可包含置於半導體基板的前側上的基板氧化層與置於基板氧化層上的複數個層間介電層。互連結構置於介電結構中。矽穿孔結構在垂直方向上從半導體基板的背側延伸貫穿至半導體基板的前側,使得矽穿孔結構的第一端部置於介電結構中。矽穿孔阻障結構可包含接觸矽穿孔結構的第一端部的阻障線與第一密封環,第一密封環置於基板氧化層中並在橫向上環繞矽穿孔結構,橫向與垂直方向垂直。
Description
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因為在各種電子元件(例如電晶體、二極體、電阻器、電容器等)的積體密度方面的不斷改善,半導體產業持續成長。大多數情況下,積體密度的改善是因為最小特徵尺寸的連續縮減而導致,並允許更多元件整合在一個給定區域中。
除了較小的電子元件之外,元件封裝方面的改良尋求提供佔據比之前的封裝體更少面積的較小封裝體。半導體封裝體種類的範例包含四方封裝(quad flat pack,QFP)、針格陣列封裝(pin grid array,PGA)、球柵陣列封裝(ball grid array,BGA)、倒裝晶片(flip chips,FC)、封裝堆疊(package on package,PoP)、單晶片系統(system on chip,SoC)或積體電路系統(system on integrated circuit,SoIC)裝置。有些三維裝置(例如三維積體電路、單晶片系統、積體電路系統)是藉由在半導體晶圓上將晶片置於晶片上來製備。這些三維裝置提供改善的積體密度與其他優勢,例如較快的速度與較高的頻寬,這是因為堆疊晶圓之間的互連結構中縮減的長度而造成。然而,仍有需多挑戰是關於三維裝置的。
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後文揭露內容提供用於實行所提供的標的的不同特徵的許多不同的實施例或範例。後文描述組件及佈置之特定範例以簡化本揭露內容。當然,此等僅為範例且未意圖具限制性。舉例而言,在後文的描述中,在第二特徵之上或上之第一特徵的形成可包含其中以直接接觸方式形成第一特徵及第二特徵的實施例,且亦可包含其中在第一特徵與第二特徵間形成額外特徵,使得第一特徵及第二特徵可不直接接觸之實施例。此外,在各種範例中,本揭露內容可能重複元件符號及/或字母。此重複係出於簡單及清楚的目的,且重複本身並不規範所論述的各種實施例及/或配置間之關係。
進一步地,為便於描述,本文中可使用諸如「在...之下」、「在...下方」、「較低」、「在...上方」、「較高」、及類似者的空間相對術語,以描述圖示中所例示之一個元件或特徵與另一元件(等)或特徵(等)的關係。除圖示中所描繪之定向之外,空間相對術語亦意圖涵蓋元件在使用或操作中之不同定向。設備能以其他方式定向(旋轉90度或以其他定向),且本文中使用之空間相對描述語可同樣以相應的方式解釋。除非特別解釋,否則具有相同參考符號的元件被假設為具有相同的材料組成且具有在相同厚度範圍內的厚度。
本揭露專注於包含矽穿孔(through silicon via,TSV)結構的半導體裝置,尤其是包含矽穿孔阻障結構的半導體晶粒,此矽穿孔阻障結構在形成矽穿孔結構期間,配置以減少與/或避免汙染物(例如水氣)入侵至半導體晶粒中。特定而言,矽穿孔阻障結構的構造允許使用背側蝕刻製程來形成矽穿孔結構,且不會降低晶粒的效能。
第1A圖為根據本揭露的一些實施方式的晶粒100的垂直橫截面視圖。第1B圖為第1A圖的部分P1的放大圖,且第1C圖為沿著第1B圖的線I-I’的水平橫截面視圖且包含重疊的阻障線的輪廓。
參考第1A圖至第1C圖,晶粒100可以是,舉例而言,特殊應用積體電路(application-specific integrated circuit,ASIC)晶片、類比晶片、感測器晶片、無線射頻晶片、穩壓器晶片或記憶體晶片。在一些實施方式中,晶粒100可為主動元件或被動元件。在一些實施方式中,晶粒100包含半導體基板102、基板氧化層104A、介電結構104、嵌入於介電結構104中的互連結構110、晶粒密封環130、矽穿孔結構160與矽穿孔阻障結構170。
在一些實施方式中,半導體基板102可包含元素半導體,例如矽或鍺,與/或化合物半導體,例如矽鍺、碳化矽、砷化鎵、砷化銦、氮化鎵或磷化銦。在一些實施方式中,半導體基板102可以是絕緣體上半導體 (semiconductor-on-insulator,SOI)基板。在不同實施方式中,半導體基板102可以是平面基板、具有多個鰭狀結構的基板、奈米線或其他發明所屬技術領域通常知識者所知的形式。取決於設計需求,半導體基板102可以為P型基板或N型基板,且在其中具有摻雜區域。摻雜區域可針對N型裝置或P型裝置而配置。
半導體基板102可包含前側102F與相對的背側102B。在一些實施方式中,半導體基板102包含定義至少一個在半導體基板102的前側102F上的主動區的隔離結構,且裝置層可置於主動區上或主動區中。裝置層可包含各種裝置。在一些實施方式中,這些裝置可包含主動元件、被動元件或其組合。在一些實施方式中,這些裝置可包含積體電路裝置。裝置可以是,舉例而言,電晶體、電容器、電阻器、二極體、光電二極體、保險絲裝置或其他類似的裝置。在一些實施方式中,裝置層包含閘極結構、源極/汲極區域、間隔物與類似者。
介電結構104可以是單層或多層介電結構。舉例而言,如第1A圖所示,介電結構104可包含基板氧化層104A與置於基板氧化層104A上的層間介電(ILD)層104B-104F。然而,在此揭露的各種實施方式並不限制層的特定數量。
基板氧化層104A可置於半導體基板102的前側102F上,且可在中段製程(middle-end-of-line,MEOL)期間形成。然而,基板氧化層104A也可在前段製程(front-end-of-line,FEOL)期間或後段製程(back-end-of-line,BEOL)期間形成。基板氧化層104A可由介電材料形成,例如氧化矽、氮氧化矽、氮化矽、低介電常數(low-k)材料或其組合。其他適合的介電材料可在本揭露的考慮範圍內。
在一些實施方式中,層間介電層104B-104F可由介電材料形成,例如氧化矽、氮氧化矽、氮化矽、低介電常數(low-k)材料或其組合。其他適合的介電材料可在本揭露的考慮範圍內。
基板氧化層104A與層間介電層104B-104F可藉由任何適合的沉積製程形成。在此,「適合的沉積製程」可包含化學氣相沉積(chemical vapor deposition,CVD)製程、物理氣相沉積(physical vapor deposition,PVD)製程、原子層沉積(atomic layer deposition,ALD)製程、高密度電漿化學氣相沉積(high density plasma CVD,HDPCVD)製程、金屬有機化學氣相沉積(metalorganic CVD,MOCVD)製程、電漿增強化學氣相沉積(plasma enhanced CVD,PECVD) 製程、濺鍍(sputtering)製程、雷射剝蝕(laser ablation)或類似者。
互連結構110可包含形成在介電結構104中的金屬特徵112。金屬特徵112可由任何適合的導電材料形成,例如銅(Cu)、金(Au)、銀(Ag)、鋁(Al)、鎢(W)、其合金或類似者。在各種實施方式中,金屬特徵112可包含原子百分比大於80%的銅,例如大於90%與/或大於95%,雖然可使用更多或更少百分比的銅。
在一些實施方式中,阻障層(未繪示)可環繞每個金屬特徵112,以避免金屬特徵112的材料遷移至半導體基板102。阻障層可包含,舉例而言,鉭(Ta)、氮化鉭(TaN)、鈦(Ti)、氮化鈦(TiN)、鈷鎢合金(CoW)或其組合。其他適合的阻障層材料可在本揭露的考慮範圍內。
金屬特徵112可包含導電的金屬線112L與通孔結構112V。通孔結構112V可操作以電性連接置於相鄰層間介電層104B-104F中的金屬線112L。金屬特徵112可電性連接至置於半導體基板102上的基板墊106,使得互連結構110可電性互連形成在半導體基板102上的半導體裝置。
互連鈍化層114可置於介電結構104上,且互連平坦化層116可置於互連鈍化層114上。互連鈍化層114可由鈍化材料形成,例如聚醯亞胺、氧化矽、氧化氮、苯並環丁烯(benzocyclobutene,BCB)聚合物、聚苯並噁唑(polybenzoxazole,PBO)、其組合或類似者。其他適合的鈍化材料可在本揭露的考慮範圍內。在一些實施方式中,互連鈍化層114可包含多層的這些鈍化材料。
互連平坦化層116可由抗水、抗應力、具有高階梯覆蓋力且均勻的材料形成。舉例而言,互連平坦化層116可由氮化矽形成,但也可由不同的材料形成,例如碳化矽、氮氧化矽、氧化矽、聚合物材料、聚醯亞胺、樹酯、低黏度液體環氧樹酯或旋塗玻璃(spin-on glass,SOG)材料。其他適合的平坦化材料可在本揭露的考慮範圍內。
晶粒密封環130可延伸圍繞晶粒100的周圍。舉例而言,晶粒密封環130可置於介電結構104中並可側向地環繞互連結構110。晶粒密封環130可配置以避免互連結構110在裝置製程期間(例如電漿蝕刻與/或沉積製程)受到污染物擴散與/或物理損害。
晶粒密封環130可包含原子百分比大於80%的銅,例如大於90%與/或大於95%,雖然可使用更多或更少百分比的銅。然而,其他晶粒密封環材料可在本揭露的考慮範圍內。晶粒密封環130可包含導電線與連接彼此的通孔結構,且可與導電線112L與通孔結構112V同時形成。晶粒密封環130可與金屬特徵112電性隔絕。
在一些實施方式中,金屬特徵112與/或晶粒密封環130可藉由雙重鑲嵌製程或多個單一鑲嵌製程形成。單一鑲嵌製程通常在每個鑲嵌製程形成並填充單一個具有銅的特徵。雙重鑲嵌製程通常一次形成並填充兩個具有銅的特徵,例如使用雙重鑲嵌製程時,溝槽與重疊的穿孔皆可在單一個銅沉積製程中被填充。在替代的實施方式中,金屬特徵112與/或晶粒密封環130可藉由電鍍製程形成。
舉例而言,鑲嵌製程可包含圖案化介電結構104以形成開口,例如溝槽與/或穿孔(例如通孔洞)。可執行沉積製程以在開口中沉積導電材料(例如銅)。可接著執行平坦化製程,例如化學機械平坦化(chemical-mechanical planarization,CMP),以移除位於介電結構104頂部的多餘的銅(例如過載)。
特定而言,可針對每一個層間介電層104B-104F執行圖案化、金屬沉積與平坦化製程,以形成互連結構110與/或晶粒密封環130。舉例而言,可沉積並圖案化層間介電層104B以在層間介電層中形成開口。可接著執行沉積製程以填充在層間介電層104B中的開口。可接著執行平坦化製程以移除過載的填充物並在層間介電層104B中形成金屬特徵112。可重複這些製程步驟以形成層間介電層104C-104F與相應的金屬特徵112與/或晶粒密封環130,並藉此完成互連結構110與/或晶粒密封環130。
在一些實施方式中,第一接合層150A可形成在互連平坦化層116上,以將晶粒100接合至,例如,第二晶粒或重分佈層(未繪示)。第一接合層150A可由接合聚合物形成,例如環氧樹酯、聚醯亞胺(polyimide,PI)、苯並環丁烯(benzocyclobutene,BCB)或聚苯並噁唑(polybenzoxazole,PBO)。第一接合墊152A可形成在第一接合層150A中,以電性連接第一晶粒100至其他裝置或裝置結構。
參見第1B圖與第1C圖,矽穿孔結構160可延伸貫穿半導體基板102並電性連接至互連結構110。特定而言,矽穿孔結構160的第一端部160E1可置於介電結構104中,且矽穿孔結構160的相對的第二端部160E2可置於半導體基板102的背側102B。在一些實施方式中,矽穿孔結構160可包含本體160B與晶種層160S。本體160B可由導電材料形成,例如銅、鎳、金、銀、鈦、鎢、鋁、其合金或類似者。如詳細所述,矽穿孔結構160可使用背側製程形成,背側製程包含沉積晶種層160S並執行電鍍(electrochemical plating,ECP)製程以在晶種層160S上形成本體160B,並完成矽穿孔結構160。晶種層160S可由電沉積晶種材料形成,例如鈦、氮化鈦、銅、其合金或類似者。在一些實施方式中,晶種層160S不會在本體160B的表面上形成明顯的層。換句話說,晶種層160S的元素可由矽穿孔結構160中的梯度呈現。
擴散阻障層162可置於矽穿孔結構160周圍,以避免從矽穿孔結構160的金屬擴散。擴散阻障層162可包含阻障材料,例如鉭、氮化鉭、鈦、氮化鈦、鈷鎢合金、其組合或類似者。擴散阻障層162可藉由任何適合的沉積製程沉積。
矽穿孔阻障結構
矽穿孔結構160可藉由使用背側或前側蝕刻與沉積製程形成。特定而言,前側製程可包含蝕刻層間介電層、基板介電層與半導體基板的前側,以形成前側溝槽,且矽穿孔結構可藉由在半導體基板的前側沉積金屬而形成在前側溝槽中。背側製程可包含藉由蝕刻半導體基板的背側以形成背側溝槽,背側溝槽延伸貫穿半導體基板與置於半導體基板的前側上的基板介電層,且接著進行背側沉積製程。
然而,前側溝槽的形成可導致製程充電(process charging),且前側溝槽可能佔據層間介電結構中的空間,否則此空間可用於互連結構。背側溝槽的形成可考慮到不需要的水氣與/或汙染物的入侵。
因此,矽穿孔阻障結構170的各種實施方式可配置以減少與/或避免與矽穿孔結構相關的水氣入侵至晶粒100。舉例而言,矽穿孔阻障結構170可配置以至少部分環繞矽穿孔結構160的第一端部160E1。特定而言,矽穿孔阻障結構170可包含第一密封環172與阻障線174。第一密封環172可形成在基板氧化層104A中且可在橫向L上環繞矽穿孔結構160,橫向L與半導體基板102的平面平行。矽穿孔結構160可在垂直方向V上延伸貫穿半導體基板102,垂直方向V與橫向L垂直。
第一密封環172可為圓形的,如第1C圖所示。然而,第一密封環172並不侷限於任何特定形狀,只要第一密封環172橫向地環繞矽穿孔結構160。舉例而言,在一些實施方式中,第一密封環172可為多邊形、卵形、或類似者。第一密封環172可由例如銅、鎳、金、銀、鈦、鎢、鋁、其合金或類似者的材料形成。在一些實施方式中,第一密封環172可最好地包含鎢。第一密封環172可直接接觸與/或接合至阻障線174。
阻障線174可由至少一部分的其中一個金屬線112L形成與/或包含至少一部分的其中一個金屬線112L。如此一來,阻障線174可在形成金屬特徵112的期間形成。阻障線174可置於基板氧化層104A上且可在垂直方向V上完全地覆蓋第一密封環172與矽穿孔結構160。
此外,在第一密封環172與矽穿孔結構160之間的最小距離D1在任何橫向L上為相同,橫向L與垂直距離V垂直。換句話說,基板氧化層104A分隔第一密封環172與矽穿孔結構160的部分可在矽穿孔結構160的全部側表面上具有一致的厚度。因此矽穿孔阻障結構170可具有對於矽穿孔結構160的等電位結構,因此可減少在矽穿孔結構160中,因電流在矽穿孔結構160中流動而產生的的電容效應。
第2圖繪示根據本揭露的一些實施方式的在半導體晶粒中形成矽穿孔結構的方法的操作的流程圖。第3A圖至第3G圖為繪示第2圖的方法的橫截面示圖,其中第3C圖至第3G圖為第3B圖的部分P2的放大圖。晶粒100類似於第1A圖至第1C圖中的晶粒100。舉例而言,晶粒100可包含矽穿孔結構160與矽穿孔阻障結構170。如此一來,將不會再詳細描述晶粒100的特徵。
參考第2圖與第3A圖,在操作201中,將晶粒100接合至載板晶圓350。特定而言,晶粒100可從包含複數個半導體晶粒的晶圓分割出。可接著倒轉晶粒100並藉由載板接合層352將晶粒100接合至載板晶圓350,使得晶粒100的半導體基板102的前側102F面對載板晶圓350。載板晶圓350可以是載板晶圓,例如矽或藍寶石晶圓或類似者。可使用任何適合的接合製程,例如熱與/或化學接合製程。保護層190與接合層192可形成在半導體基板102的背側102B上。
參考第2圖與第3B圖,在操作202中,光阻層PR可形成在半導體基板102的背側102B。舉例而言,可在接合層192上沉積、曝光並圖案化光阻材料以形成光阻層PR。光阻層PR可具有面對矽穿孔阻障結構170的開口。
參考第2圖與第3C圖,在操作203中,可接著使用光阻層PR作為遮罩來執行濕式或乾式蝕刻製程,以形成延伸貫穿半導體基板102且延伸至基板氧化層104A的溝槽196。特別而言,基板氧化層104A的部分可留在溝槽196的底部的阻障線174上。可藉由使用,例如灰化,來移除光阻層PR。
參考第2圖與第3D圖,在操作204中,可使用任何適合的沉積製程,在溝槽196中沉積阻障層材料162M。特定而言,為了預防與/或減少襯墊工具(liner tool)的污染,包含基板氧化層104A的部分104P的基板氧化層104A可隔開阻障層材料162M與矽穿孔阻障結構170,基板氧化層104A的部分104P覆蓋阻障線174。
參考第2圖與第3E圖,在操作205中,可執行平坦化製程,例如化學機械平坦化製程,以平坦化接合層192,並移除位於溝槽196外的阻障層材料162M。可接著執行回蝕製程以移除阻障層材料162M的底部部分與基板氧化層104A的部分104P,以暴露阻障線174並形成擴散阻障層162。
參考第2圖與第3F圖,在操作206中,可在溝槽196中沉積晶種層160S,且可在晶種層160S上形成矽穿孔材料層160M。舉例而言,可使用電鍍製程或類似者將矽穿孔材料層160M成長在晶種層160S上。
參考第2圖與第3G圖,在操作207中,可執行平坦化製程,例如化學機械平坦化製程,以移除位於溝槽196外的部分晶種層160S與矽穿孔材料層160M,從而平坦化半導體基板102的背側102B並形成本體160B並完成矽穿孔結構160。
第4圖為根據本揭露的一些實施方式的如第3G圖所示的改良版本的矽穿孔結構161與矽穿孔阻障結構171的垂直橫截面視圖。參考第4圖,矽穿孔結構161與矽穿孔阻障結構171可形成在晶粒100中,如第1A圖所示。如此一來,將不再重複類似元件的描述。
矽穿孔結構161可包含本體161B與晶種層161S,且本體161B從晶種層161S生長出,如參照矽穿孔結構160所描述。晶種層160S與晶種層161S可藉由電沉積晶種材料形成,例如鈦、氮化鈦、銅、其合金或類似者,且本體160B與本體161B可由導電材料形成,例如銅、金、銀、其合金或類似者。矽穿孔結構160與矽穿孔結構161可置於擴散阻障層162之間,擴散阻障層162由阻障材料形成,例如鉭、氮化鉭、鈦、氮化鈦、鈷鎢合金、其組合或類似者。
然而,不像第3G圖的矽穿孔結構160,繪示於第4圖的矽穿孔結構161可延伸至介電結構104的多個層中。舉例而言,矽穿孔結構161可延伸貫穿第一層間介電層104B並延伸至第二層間介電層104C中。然而,在其他實施方式中,矽穿孔結構161可延伸至額外的層間介電層中。
矽穿孔阻障結構171可包含第一密封環172、第二密封環175與阻障線177。第二密封環175與阻障線177可包含至少形成在介電結構104中的部分金屬特徵。舉例而言,第二密封環175可包含至少形成在第一層間介電層104B中的部分金屬線與形成在第二層間介電層104C中的部分通孔結構。因此,第二密封環175與阻障線177可由導電材料形成,例如銅、鎳、金、銀、鈦、鎢、鋁、其合金或類似者。
阻障線177可包含至少形成在第二層間介電層104C中的部分金屬線。阻障線177可直接接觸矽穿孔結構161。第二密封環175可在垂直方向V上將阻障線177連接至第一密封環172,垂直方向V與半導體基板102的平面垂直。第一密封環172與第二密封環175可在與垂直方向V垂直的橫向L上環繞矽穿孔結構160、161。
第5A圖為根據本揭露的一些實施方式的簡化的半導體封裝體500的上視圖,且第5B圖為沿著第5A圖的線I-I’的垂直橫截面視圖。參考第5A圖與第5B圖,半導體封裝體500可包含置於第二晶粒200上的第一晶粒100。第一晶粒100可類似於如第1A圖所示的晶粒100。因此,將不再詳細描述第一晶粒100的特徵。
第一晶粒100可藉由包含第一接合層150A與第二接合層150B的接合結構150接合至第二晶粒200,此第一接合層150A置於第一晶粒100上且第二接合層150B置於第二晶粒200上。包含置於第一接合層150A中的第一接合墊152A與第二接合層150B中的第二接合墊152B的接合墊結構152可電性連接至第一晶粒100與第二晶粒200。
第一介電封裝(dielectric encapsulation,DE)層50A可環繞第一晶粒100且第二介電封裝層50B可環繞第二晶粒200。在各種實施方式中,第一介電封裝層50A與第二介電封裝層50B可包含模塑化合物,模塑化合物包含樹酯與填充物。在替代性的實施方式中,第一介電封裝層50A與第二介電封裝層50B可由氧化矽、氮化矽或其組合形成。第一介電封裝層50A與第二介電封裝層50B可藉由旋轉塗佈、積層法(lamination)、沉積或類似者形成。
重分佈層(redistribution layer,RDL)結構300可形成在第一晶粒100與第一介電封裝層50A上。重分佈層結構300可包含一或多個介電層308、置於介電層308中的金屬特徵312、置於介電層308上的鈍化層310、重分佈層密封環330與封裝接合墊314。在一些實施方式中,封裝接合墊314可以是用於安置導體連接件,例如金屬柱、微型凸塊或類似者,的球下金屬層(under bump metallization,UBM)墊。封裝接合墊314可包含金屬或金屬合金。封裝接合墊314可包含,舉例而言,鋁、銅、鎳、其金屬或類似者。其他適合的墊材料可在本揭露的考慮範圍內。
封裝接合墊314的上表面可通過鈍化層310而暴露。在一些實施方式中,鈍化層310包含氧化矽、氮化矽、苯並環丁烯(benzocyclobutene,BCB)聚合物、聚醯亞胺(polyimide,PI)或聚苯並噁唑(polybenzoxazole,PBO)、其組合或類似者。其他適合的鈍化層材料可在本揭露的考慮範圍內。重分佈層密封環330可包含與晶圓密封環130的結構與材料類似的結構與材料。
重分佈層結構300可配置以藉由電性觸點340(例如焊球或類似者)連接半導體封裝體500至外部元件,這些電性觸點340電性連接至封裝接合墊314。特定而言,半導體封裝體500可包含介電穿孔(through-dielectric via,TDV)結構60,介電穿孔結構60延伸貫穿第一介電封裝層50A並將第二晶粒200電性連接至重分佈層結構300。第一晶粒100可藉由矽穿孔結構160電性連接至重分佈層結構300。
在一些實施方式中,介電穿孔結構60可包含導電材料,例如銅、鈦、鎳、金、銀、鋁、其組合或類似者。在一些實施方式中,擴散阻障層(未繪示)可置於介電穿孔結構60周圍,以避免至第一介電封裝層50A的金屬擴散。擴散阻障層可包含鉭、氮化鉭、鈦、氮化鈦、鈷鎢合金、其組合或類似者。其他適合的阻障層材料可在本揭露的考慮範圍內。
第二晶粒200可包含半導體基板208、層間介電層209與包含金屬特徵212的互連結構210。互連結構210可電性連接至介電穿孔結構60與接合墊結構152。
本揭露的各種實施方式提供晶粒100,晶粒100可包含半導體基板102、介電結構104、互連結構110、矽穿孔結構160與矽穿孔阻障結構170。半導體基板102具有前側102F與相對的背側102B。介電結構104可包含置於半導體基板102的前側102F上的基板氧化層104A與置於基板氧化層104A上的複數個層間介電層104B-104F。互連結構110置於介電結構104中。矽穿孔結構160在垂直方向上從半導體基板102的背側102B延伸貫穿至半導體基板102的前側102F,使得矽穿孔結構160的第一端部160E1置於介電結構104中。矽穿孔阻障結構170可包含接觸矽穿孔結構160的第一端部160E1的阻障線174與第一密封環172,第一密封環172置於基板氧化層104A中並在橫向上環繞矽穿孔結構160,橫向與垂直方向垂直。
在實施方式中,第一密封環172直接接觸阻障線174並在垂直方向上朝半導體基板102延伸。在實施方式中,阻障線174可置於基板氧化層104A上與其中一個層間介電層104B-104F中。在實施方式中,阻障線174在垂直方向上覆蓋第一密封環172與矽穿孔結構160。在實施方式中,晶粒100可更包含晶粒密封環130,晶粒密封環130置於介電結構104中並環繞矽穿孔阻障結構170與互連結構110,其中阻障線174電性連接矽穿孔結構160、161至互連結構110。在實施方式中,阻障線174可包含銅,且第一密封環172可包含鎢。在實施方式中,在第一密封環172與矽穿孔結構160、161之間的最小距離在任何橫向上為相同,橫向與垂直方向垂直,使得第一密封環172具有對於矽穿孔結構160、161的等電位結構。在實施方式中,晶粒可更包含置於矽穿孔結構160、161與半導體基板102之間的擴散阻障層162,擴散阻障層162配置以減少從矽穿孔結構160、161的金屬擴散。在實施方式中,擴散阻障層162可延伸至介電結構104中,使得擴散阻障層162置於第一密封環172與矽穿孔結構160、161之間。在實施方式中,晶粒可包含第二密封環175,第二密封環175在橫向上環繞矽穿孔結構160、161,且從阻障線174延伸貫穿至少一個層間介電層104B-104F至第一密封環172。在實施方式中,第一密封環172可包含鎢,且第二密封環175、阻障線174與矽穿孔結構160、161可包含銅。在實施方式中,第二密封環175可延伸貫穿至少兩個層間介電層104B-104F。在實施方式中,晶粒也可包含擴散阻障層162,擴散阻障層162置於矽穿孔結構160、161與半導體基板102之間,擴散阻障層162配置以減少從矽穿孔結構160、161的金屬擴散。
本揭露的各種實施方式提供包含第一晶粒100與連接至第第一晶粒100的第二晶粒200的半導體封裝體。第一晶粒100可包含第一半導體基板102、介電結構104、第一互連結構110、矽穿孔結構160與矽穿孔阻障結構170。第一半導體基板102具有前側102F與相對的背側102B。介電結構104包含置於第一半導體基板102的前側102F上的基板氧化層104A與置於基板氧化層104A上的複數個層間介電層104B-104F。第一互連結構110置於介電結構104中。矽穿孔結構160在垂直方向上從第一半導體基板102的背側102B延伸貫穿至第一半導體基板102的前側102F,使得矽穿孔結構160的第一端部160E1置於介電結構104中。矽穿孔阻障結構170包含接觸矽穿孔結構160的第一端部160E1的阻障線174與第一密封環172,第一密封環172置於基板氧化層104A中並在橫向上環繞矽穿孔結構160,橫向與垂直方向垂直。第二晶粒200可包含第二半導體基板208與電性連接至第一晶粒100的第一互連結構110的第二互連結構210。
在實施方式中,半導體封裝體也包含置於矽穿孔結構160、161與第一半導體基板102之間的擴散阻障層162,擴散阻障層162配置以減少從矽穿孔結構160、161的金屬擴散,其中第一密封環172直接接觸阻障線174並在垂直方向上朝第一半導體基板102延伸。在實施方式中,矽穿孔阻障結構170可包含第二密封環175,第二密封環175在橫向上環繞矽穿孔結構160、161,且從阻障線174延伸貫穿介電結構104的至少一個層間介電層104B-104F至第一密封環172。
本揭露的各種實施方式提供形成矽穿孔結構的方法,包含接合晶粒100至載板晶圓350,晶粒100包含半導體基板102、置於半導體基板102的前側102F上並接合至載板晶圓350的介電結構104與置於介電結構104中的矽穿孔阻障結構170;蝕刻半導體基板102的背側102B以形成位於矽穿孔阻障結構170上的溝槽196;形成擴散阻障層162於溝槽196的複數個側壁上;形成晶種層160S於擴散阻障層162上、暴露於溝槽196的底部的阻障線174上與半導體基板102的背側上;形成矽穿孔材料層160M於晶種層160S上;以及平坦化半導體基板102的背側102B以形成矽穿孔結構160。
在實施方式中,在形成矽穿孔結構160、161的方法中,其中形成擴散阻障層162包含操作:沉積擴散阻障層材料162M於溝槽196中與半導體基板102的背側102B上;平坦化半導體基板102以從半導體基板102的背側102B移除擴散阻障層材料162M;以及執行回蝕製程以從溝槽196的底部移除擴散阻障層材料162M,以完成擴散阻障層162並暴露阻障線174。在實施方式中,溝槽196可位於矽穿孔阻障結構170的第一密封環結構(例如第一密封環172)的內側,且第一密封環結構(例如第一密封環172)置於介電結構104的基板氧化層104A中。在實施方式中,形成矽穿孔材料層160M包含使用電鍍製程。
在此揭露的各種結構與方法提供背側基板穿孔(backside through substrate via,BTSV)結構,背側基板穿孔結構被設計以具有保護環結構來防止其他的裝置或電路製程中可能產生的水氣與污染物。實施方式中具有前段製程/中段製程/後段製程的保護環的背側基板穿孔結構被設計以防止因為背側基板穿孔結構製程中的水氣與污染物所產生的裝置或電路的低良率或可靠度。(前段製程/中段製程/後段製程的保護環可單獨使用或與其他結構一起合併使用)。前段製程與中段製程的保護環的功能為避免或減緩水氣與污染物入侵至前段製程與中段製程。材料可包含金屬(例如鎢、金屬閘極)與非金屬(例如二氧化矽、無摻雜矽玻璃、氮化矽等)。
上述概述數種實施例或範例的特徵,以便熟習此項技藝者可更瞭解本揭露內容的態樣。熟習此項技藝者應當理解,熟習此項技藝者可輕易地使用本揭露內容作為設計或修改其他製程及結構之基礎,以實現本文中所介紹之實施例或範例的相同目的及/或達成相同優點。熟習此項技藝者亦應當認知,此均等構造不脫離本揭露內容的精神及範圍,且在不脫離本揭露內容之精神及範圍之情況下,熟習此項技藝者可在本文中進行各種改變、替換、及變更。
50A:第一介電封裝層
50B:第二介電封裝層
60:介電穿孔結構
100:晶粒
102:半導體基板
102B:背側
102F:前側
104:介電結構
104A:基板氧化層
104B:層間介電層
104C:層間介電層
104D:層間介電層
104E:層間介電層
104F:層間介電層
104P:部分
106:基板墊
110:互連結構
112:金屬特徵
112L:導電線
112V:通孔結構
114:互連鈍化層
116:互連平坦化層
130:晶粒密封環
150:接合結構
150A:第一接合層
150B:第二接合層
152:接合墊結構
152A:第一接合墊
152B:第二接合墊
160:矽穿孔結構
160B:本體
160E1:第一端部
160E2:第二端部
160M:矽穿孔材料層
160S:晶種層
161:矽穿孔結構
161B:本體
161S:晶種層
162:擴散阻障層
162M:矽穿孔材料層
162S:晶種層
170:矽穿孔阻障結構
171:矽穿孔阻障結構
172:第一密封環
174:阻障線
175:第二密封環
177:阻障線
190:保護層
192:接合層
196:溝槽
200:晶粒
201:操作
202:操作
203:操作
204:操作
205:操作
206:操作
207:操作
208:半導體基板
209:層間介電層
210:互連結構
300:重分佈層
308:介電層
310:鈍化層
312:金屬特徵
314:封裝接合墊
330:重分佈層密封環
340:電性觸點
350:載板晶圓
352:載板接合層
500:半導體封裝體
D1:最小距離
I-I’:線
L:橫向
P1:部分
P2:部分
PR:光阻層
V:垂直方向
在隨附圖式一起研讀時,根據以下詳細描述內容可最佳地理解本揭露的態樣。應注意,根據行業中之標準慣例,各種特徵未按比例繪製。實際上,各種特徵的尺寸可為了論述清楚經任意地增大或減小。
第1A圖為根據本揭露的一些實施方式的第一晶粒100的垂直橫截面視圖。
第1B圖為第1A圖的部分P1的放大圖。
第1C圖為沿著第1B圖的線I-I’的水平橫截面視圖且包含重疊的阻障線的輪廓。
第2圖繪示根據本揭露的一些實施方式的在半導體晶粒中形成矽穿孔結構的方法的操作的流程圖。
第3A圖至第3G圖繪示當執行第2圖的方法的操作時的中間結構的垂直橫截面示圖,其中第3C圖至第3G圖為第3B圖的部分P2的放大圖。
第4圖為根據本揭露的一些實施方式的如第3G圖所示的矽穿孔結構與矽穿孔阻障結構的改良版本的垂直橫截面視圖。
第5A圖為根據本揭露的一些實施方式的簡化的半導體封裝體的上視圖。
第5B圖為沿著第5A圖的線I-I’的垂直橫截面視圖。
100:晶粒
102:半導體基板
102B:背側
102F:前側
104:介電結構
104A:基板氧化層
104B:層間介電層
104C:層間介電層
104D:層間介電層
104E:層間介電層
104F:層間介電層
106:基板墊
110:互連結構
112:金屬特徵
112L:導電線
112V:通孔結構
114:互連鈍化層
116:互連平坦化層
130:晶粒密封環
150A:第一接合層
152A:第一接合墊
P1:部分
Claims (20)
- 一種晶粒,包含: 一半導體基板,具有一前側與相對的一背側; 一介電結構,包含置於該半導體基板的該前側上的一基板氧化層與置於該基板氧化層上的複數個層間介電層; 一互連結構,置於該介電結構中; 一矽穿孔結構,在一垂直方向上從該半導體基板的該背側延伸貫穿至該半導體基板的該前側,使得該矽穿孔結構的一第一端部置於該介電結構中;以及 一矽穿孔阻障結構,包含: 一阻障線,接觸該矽穿孔結構的該第一端部;以及 一第一密封環,置於該基板氧化層中並在一橫向上環繞該矽穿孔結構,該橫向與該垂直方向垂直。
- 如請求項1所述之晶粒,其中該第一密封環接觸該阻障線並在該垂直方向上朝該半導體基板延伸。
- 如請求項2所述之晶粒,其中該阻障線置於該基板氧化層上與其中一個該些層間介電層中。
- 如請求項2所述之晶粒,其中該阻障線在該垂直方向上覆蓋該第一密封環與該矽穿孔結構。
- 如請求項2所述之晶粒,更包含一晶粒密封環,置於該介電結構中並環繞該矽穿孔阻障結構與該互連結構, 其中該阻障線電性連接該矽穿孔結構至該互連結構。
- 如請求項2所述之晶粒,其中 該阻障線包含銅;且 該第一密封環包含鎢。
- 如請求項2所述之晶粒,其中在該第一密封環與該矽穿孔結構之間的一最小距離在任何該橫向上為相同,該橫向與該垂直方向垂直,使得該第一密封環具有對於該矽穿孔結構的一等電位結構。
- 如請求項1所述之晶粒,更包含一擴散阻障層,置於該矽穿孔結構與該半導體基板之間,該擴散阻障層配置以減少從該矽穿孔結構的金屬擴散。
- 如請求項8所述之晶粒,其中該擴散阻障層延伸至該介電結構中,使得該擴散阻障層置於該第一密封環與該矽穿孔結構之間。
- 如請求項1所述之晶粒,更包含一第二密封環,該第二密封環在該橫向上環繞該矽穿孔結構,且從該阻障線延伸貫穿至少一個該些層間介電層至該第一密封環。
- 如請求項10所述之晶粒,其中 該第一密封環包含鎢;且 該第二密封環、該阻障線與該矽穿孔結構包含銅。
- 如請求項10所述之晶粒,其中該第二密封環延伸貫穿至少兩個該些層間介電層。
- 如請求項10所述之晶粒,更包含一擴散阻障層,置於該矽穿孔結構與該半導體基板之間,該擴散阻障層配置以減少從該矽穿孔結構的金屬擴散。
- 一種半導體封裝體,包含: 一第一晶粒,包含: 一第一半導體基板,具有一前側與相對的一背側; 一介電結構,包含置於該第一半導體基板的該前側上的一基板氧化層與置於該基板氧化層上的複數個層間介電層; 一第一互連結構,置於該介電結構中; 一矽穿孔結構,在一垂直方向上從該第一半導體基板的該背側延伸貫穿至該第一半導體基板的該前側,使得該矽穿孔結構的一第一端部置於該介電結構中;以及 一矽穿孔阻障結構,包含: 一阻障線,接觸該矽穿孔結構的該第一端部;以及 一第一密封環,置於該基板氧化層中並在一橫向上環繞該矽穿孔結構,該橫向與該垂直方向垂直;以及 一第二晶粒,接合至該第一晶粒,該第二晶粒包含一第二半導體基板與電性連接至該第一晶粒的該第一互連結構的一第二互連結構。
- 如請求項14所述之半導體封裝體,更包含一擴散阻障層,置於該矽穿孔結構與該第一半導體基板之間,該擴散阻障層配置以減少從該矽穿孔結構的金屬擴散, 其中該第一密封環接觸該阻障線並在該垂直方向上朝該第一半導體基板延伸。
- 如請求項14所述之半導體封裝體,其中該矽穿孔阻障結構更包含一第二密封環,該第二密封環在該橫向上環繞該矽穿孔結構,且從該阻障線延伸貫穿該介電結構的至少一個該些層間介電層至該第一密封環。
- 一種形成矽穿孔結構的方法,包含: 接合一晶粒至一載板晶圓,該晶粒包含一半導體基板、置於該半導體基板的一前側上並接合至該載板晶圓的一介電結構與置於該介電結構中的一矽穿孔阻障結構; 蝕刻該半導體基板的一背側以形成位於該矽穿孔阻障結構上的一溝槽; 形成一擴散阻障層於該溝槽的複數個側壁上; 形成一晶種層於該擴散阻障層上、暴露於該溝槽的一底部的一阻障線上與該半導體基板的該背側上; 形成一矽穿孔材料層於該晶種層上;以及 平坦化該半導體基板的該背側以形成該矽穿孔結構。
- 如請求項17所述之方法,其中形成該擴散阻障層包含: 沉積一擴散阻障層材料於該溝槽中與該半導體基板的該背側上; 平坦化該半導體基板以從該半導體基板的該背側移除該擴散阻障層材料;以及 執行一回蝕製程以從該溝槽的該底部移除該擴散阻障材層料,以完成該擴散阻障層並暴露該阻障線。
- 如請求項17所述之方法,其中: 該溝槽位於該矽穿孔阻障結構的一第一密封環結構的內側;且 該第一密封環結構置於該介電結構的該基板氧化層中。
- 如請求項17所述之方法,其中形成該矽穿孔材料層包含使用一電鍍製程。
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2021
- 2021-09-10 US US17/472,181 patent/US20220301981A1/en active Pending
- 2021-12-22 TW TW110148292A patent/TW202238842A/zh unknown
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2022
- 2022-01-07 CN CN202210014819.8A patent/CN114765153A/zh active Pending
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2023
- 2023-08-03 US US18/230,135 patent/US20230386972A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
US20230386972A1 (en) | 2023-11-30 |
CN114765153A (zh) | 2022-07-19 |
US20220301981A1 (en) | 2022-09-22 |
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