TW202237870A - Method for manufacturing shower head and shower head and plasma processing apparatus - Google Patents

Method for manufacturing shower head and shower head and plasma processing apparatus Download PDF

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TW202237870A
TW202237870A TW110144555A TW110144555A TW202237870A TW 202237870 A TW202237870 A TW 202237870A TW 110144555 A TW110144555 A TW 110144555A TW 110144555 A TW110144555 A TW 110144555A TW 202237870 A TW202237870 A TW 202237870A
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Taiwan
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sleeve
plasma
shower head
substrate
base material
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TW110144555A
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Chinese (zh)
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佐佐木芳彥
南雅人
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日商東京威力科創股份有限公司
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Publication of TW202237870A publication Critical patent/TW202237870A/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3244Gas supply means
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05BSPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B1/00Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
    • B05B1/005Nozzles or other outlets specially adapted for discharging one or more gases
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05BSPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B15/00Details of spraying plant or spraying apparatus not otherwise provided for; Accessories
    • B05B15/14Arrangements for preventing or controlling structural damage to spraying apparatus or its outlets, e.g. for breaking at desired places; Arrangements for handling or replacing damaged parts
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • C23C16/45565Shower nozzles
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/321Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211Antennas, e.g. particular shapes of coils
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32Processing objects by plasma generation
    • H01J2237/33Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334Etching

Abstract

The invention provides a showerhead manufacturing method, a showerhead, and a plasma processing apparatus capable of suppressing the occurrence of cracks around a sleeve when used at a high temperature. A method for manufacturing a showerhead for discharging a processing gas for generating plasma into a plasma generation space in a chamber in which a substrate is disposed and plasma is generated in a plasma processing apparatus for performing a processing by plasma on the substrate, the method comprising: a step for preparing a metal base material; a metal base material which constitutes a portion of the main body part having the gas ejection hole and has a sleeve mounting hole; a step of attaching a sleeve having a gas ejection hole inside to the sleeve attachment hole of the base material; a step in which the base material and the sleeve are subjected to HIP treatment, and the sleeve is bonded to the base material by HIP; and a step for forming a ceramic spray film on the chamber-side surface of the base material and the chamber-side surface of the sleeve.

Description

噴淋頭之製造方法及噴淋頭、以及電漿處理裝置 Manufacturing method of shower head, shower head, and plasma treatment device

本揭示係關於一種噴淋頭之製造方法及噴淋頭、以及電漿處理裝置。 The disclosure relates to a method for manufacturing a shower head, a shower head, and a plasma treatment device.

平板顯示器(FPD)之製造過程會對被處理體之玻璃基板所形成之既定膜施予電漿蝕刻等電漿處理來施予細微加工,以形成電極或配線等。 In the manufacturing process of flat panel display (FPD), plasma etching or other plasma treatment is applied to the predetermined film formed on the glass substrate of the object to be processed, and microfabrication is applied to form electrodes or wiring.

進行此般電漿處理之電漿處理裝置係在腔室內所配置之載置台上配置基板的狀態下,由配置於載置台上方的噴淋頭來將處理氣體噴出至腔室內,以在腔室內產生電漿。 The plasma processing device for performing such plasma processing is to spray the processing gas into the chamber from the shower head arranged above the mounting table in the state where the substrate is arranged on the mounting table arranged in the chamber, so that Generate plasma.

噴淋頭係以鋁等金屬來加以形成,且由於會暴露在處理氣體或電漿下,故被提出有各種抑制針對噴淋頭之腐蝕的技術。 The showerhead is formed of metal such as aluminum, and since it is exposed to process gas or plasma, various techniques for suppressing corrosion on the showerhead have been proposed.

例如,專利文獻1提出有一種技術,係在噴淋頭之基材所設置之氣體噴出口的出口側形成凹部,在其凹部固定圓筒狀之套筒,且以覆蓋基材之電漿產生空間側之表面的方式來形成耐電漿皮膜。 For example, Patent Document 1 proposes a technology in which a recess is formed on the outlet side of the gas ejection port provided on the base material of the shower head, a cylindrical sleeve is fixed in the recess, and a plasma covering the base material is generated. The plasma-resistant film is formed on the surface of the space side.

(專利文獻) 日本特開2017-22356號公報 (Patent Document) Japanese Patent Laid-Open No. 2017-22356

本揭示係提供一種於高溫使用時可抑制套筒周圍發生龜裂之噴淋頭之製造方法及噴淋頭、以及電漿處理裝置。 The present disclosure provides a method for manufacturing a shower head capable of suppressing cracks around a sleeve when used at high temperatures, a shower head, and a plasma treatment device.

本揭示之一實施形態相關之噴淋頭之製造方法,係製造在對基板 施予電漿所致之處理的電漿處理裝置中,將用以產生該電漿之處理氣體噴出至配置有該基板,且會產生電漿之腔室內的電漿產生空間之噴淋頭的噴淋頭之製造方法;該噴淋頭具備:具有複數會噴出該處理氣體的氣體噴出孔之本體部;以及,設於該本體部內,會導入該處理氣體並連通於該氣體噴出孔之氣體擴散空間;該製造方法具有:準備會構成該本體部之該氣體噴出孔的部分,且具有複數個套筒裝設孔的金屬製基材之工序;將其內部具有該氣體噴出孔之套筒裝設在該基材之各該套筒裝設孔之工序;將該基材及該套筒做HIP處理,以將該套筒HIP接合於該基材之工序;以及,於該基材及該套筒的該電漿產生空間側之一面形成陶瓷製的火焰噴塗皮膜之工序。 A method of manufacturing a shower head related to an embodiment of the present disclosure is to manufacture a In a plasma processing device for processing caused by plasma, the processing gas used to generate the plasma is ejected to the shower head of the plasma generation space in the chamber where the substrate is disposed and the plasma is generated A method for manufacturing a shower head; the shower head includes: a body portion having a plurality of gas ejection holes capable of ejecting the processing gas; Diffusion space; the manufacturing method includes: preparing a metal base material that will constitute the gas ejection hole of the main body and having a plurality of sleeve mounting holes; placing the sleeve with the gas ejection hole inside The process of installing each of the sleeve mounting holes in the base material; the process of performing HIP treatment on the base material and the sleeve to HIP bond the sleeve to the base material; and, between the base material and the sleeve A step of forming a ceramic flame spray coating on one surface of the sleeve on the side of the plasma generating space.

依據本揭示,便可提供一種於高溫使用時可抑制套筒周圍發生龜裂之噴淋頭之製造方法及噴淋頭、以及電漿處理裝置。 According to the disclosure, it is possible to provide a method for manufacturing a shower head capable of suppressing cracks around the sleeve when used at high temperature, a shower head, and a plasma treatment device.

1:本體容器 1: Body container

2:噴淋頭 2: sprinkler head

3:天線室 3: Antenna room

4:腔室 4: chamber

5:支撐架 5: support frame

7:絕緣構件 7: Insulation member

13:高頻天線 13: High frequency antenna

18:第1高頻電源 18: The first high-frequency power supply

20:處理氣體供應機構 20: Process gas supply mechanism

50:本體部 50: body part

51:氣體擴散空間 51: Gas diffusion space

52:基材部 52: Substrate Department

53:氣體噴出部 53: Gas ejection part

54:氣體噴出孔 54: Gas ejection hole

61:基材 61: Substrate

62,62’:套筒 62,62': Sleeve

63:第1火焰噴塗皮膜 63: The first flame sprayed film

64:第2火焰噴塗皮膜 64: The second flame spraying film

100:控制部 100: Control Department

G:基板 G: Substrate

圖1係顯示第1實施形態相關之電漿處理裝置的剖視圖。 Fig. 1 is a cross-sectional view showing a plasma processing apparatus according to a first embodiment.

圖2係顯示構成圖1之電漿處理裝置的噴淋頭之本體部的氣體噴出口一部分之圖式。 FIG. 2 is a diagram showing a part of the gas ejection port of the main body of the shower head constituting the plasma processing apparatus of FIG. 1 .

圖3係用以說明噴淋頭之製造方法的工序剖視圖。 Fig. 3 is a sectional view illustrating the process of the shower head manufacturing method.

圖4係顯示在套筒與基材之間產生間隙時所產生的龜裂之圖式。 Fig. 4 is a diagram showing cracks generated when a gap is created between the sleeve and the substrate.

圖5係顯示在基材及套筒之氣體擴散空間側的一面及腔室側的一面之境界部分具有段差情況的圖式。 Fig. 5 is a diagram showing a case where there is a level difference at the boundary between the gas diffusion space side and the chamber side of the substrate and the sleeve.

圖6係顯示構成第2實施形態之電漿處理裝置的噴淋頭之本體部的氣體噴出部一部分之圖式。 Fig. 6 is a diagram showing a part of the gas ejection part of the main body part of the shower head constituting the plasma processing apparatus according to the second embodiment.

圖7係顯示關於圖2結構之噴淋頭的氣體噴出部,就以以往方式所接合之套筒與以HIP接合者進行耐熱性試驗的結果之圖式。 Fig. 7 is a diagram showing the results of a heat resistance test of a conventionally bonded sleeve and a HIP bonded sleeve for the gas ejection portion of the showerhead having the structure shown in Fig. 2 .

圖8係顯示關於圖6結構之噴淋頭的氣體噴出部,就以以往方式所接合之套筒與以HIP接合者進行耐熱性試驗的結果之圖式。 FIG. 8 is a graph showing the results of heat resistance tests on the conventionally bonded sleeve and the HIP bonded sleeve for the gas ejection portion of the showerhead having the structure shown in FIG. 6 .

以下便參照添附圖式,就實施形態來加以說明。 Hereinafter, the embodiments will be described with reference to the attached drawings.

<第1實施形態> <First Embodiment>

首先,就第1實施形態來加以說明。 First, the first embodiment will be described.

圖1係顯示第1實施形態相關之電漿處理裝置的剖視圖。 Fig. 1 is a cross-sectional view showing a plasma processing apparatus according to a first embodiment.

圖1所示之電漿處理裝置係構成為作為感應耦合電漿處理裝置,可適用於在矩形基板,例如FPD用玻璃基板上形成薄膜電晶體時之金屬膜的蝕刻。 The plasma processing apparatus shown in FIG. 1 is configured as an inductively coupled plasma processing apparatus, and is suitable for etching a metal film when forming a thin film transistor on a rectangular substrate, such as a glass substrate for FPD.

此種感應耦合電漿處理裝置係具有導電性材料,例如內壁面被陽及氧化處理後的鋁所構成之方筒狀氣密的本體容器1。此本體容器1係可分解地加以組裝,並藉由接地線1a來接地。 This kind of inductively coupled plasma processing device has a square tube-shaped airtight body container 1 made of conductive material, such as aluminum whose inner wall surface is anodized and oxidized. The body container 1 is detachably assembled and grounded via a ground wire 1a.

本體容器1係藉由與本體容器1絕緣所形成之矩形的噴淋頭2而被上下地區隔,上側會成為區劃出天線室之天線容器3,下側則會區劃出具有電漿產生空間S之處理室的腔室4。噴淋頭2係具有作為金屬窗之功能,且會構成腔室4的頂壁。成為金屬窗之噴淋頭2主要是以非磁性體之導電性金屬,例如鋁(Al)材(Al或Al合金)來加以構成。 The main body container 1 is separated up and down by the rectangular shower head 2 formed by insulating the main body container 1. The upper side will become the antenna container 3 that defines the antenna room, and the lower side will define the plasma generation space S Chamber 4 of the processing chamber. The shower head 2 has the function of a metal window and will constitute the top wall of the chamber 4 . The shower head 2 used as the metal window is mainly composed of non-magnetic conductive metal, such as aluminum (Al) material (Al or Al alloy).

天線容器3的側壁3a與腔室4的側壁4a之間係設有會突出於本體容器1之內側,且會支撐噴淋頭2之支撐架5。支撐架5是以導電性材料,最好是鋁等金屬來加以構成。噴淋頭2係構成為透過絕緣構件7來被分割為複數個。然後, 被分割為複數個之噴淋頭2的分割部分係藉由複數根吊件(suspender,未圖式)而成為吊掛在本體容器1之頂部的狀態。 Between the side wall 3a of the antenna container 3 and the side wall 4a of the chamber 4 is a support frame 5 protruding from the inner side of the main body container 1 and supporting the shower head 2 . The support frame 5 is made of conductive material, preferably metal such as aluminum. Shower head 2 is configured to be divided into plural parts through insulating member 7 . Then, The divided parts of the sprinkler head 2 are suspended on the top of the main body container 1 by a plurality of suspenders (not shown).

噴淋頭2之各分割部分係具有本體部50,以及設置於本體部50內部之氣體擴散空間(Buffer)51。本體部50係具有基材部52,以及具有將處理氣體從氣體擴散空間51朝腔室4內之電漿產生空間S噴出的複數氣體噴出孔54之氣體噴出部53。氣體擴散空間51係透過氣體供應管51而從處理氣體供應機構20導入有處理氣體。氣體擴散空間51係連通至複數氣體噴出孔54,並會透過複數氣體噴出孔54來使處理氣體從氣體擴散空間51噴出。另外,基材部52與氣體噴出部53可為一體構成,也可為另體構成。在另體構成的情況,氣體噴出部53係構成為噴淋板。 Each divided part of the shower head 2 has a main body 50 and a gas diffusion space (Buffer) 51 disposed inside the main body 50 . The main body portion 50 has a base portion 52 and a gas ejection portion 53 having a plurality of gas ejection holes 54 for ejecting process gas from the gas diffusion space 51 toward the plasma generation space S in the chamber 4 . The gas diffusion space 51 is introduced with a processing gas from the processing gas supply mechanism 20 through the gas supply pipe 51 . The gas diffusion space 51 is connected to a plurality of gas ejection holes 54 , and the processing gas is ejected from the gas diffusion space 51 through the plurality of gas ejection holes 54 . In addition, the base material portion 52 and the gas ejection portion 53 may be formed integrally or separately. In the case of another configuration, the gas ejection part 53 is configured as a shower plate.

噴淋頭2上之天線容器3內係以面向於噴淋頭2之電漿產生空間S側之相反側一面之方式而設有高頻天線13。高頻天線13係由導電性材料,例如銅等所構成,並藉由絕緣構件所構成之間隔件(未圖示)來從噴淋頭2分離配置,且會在對應於矩形噴淋頭2之面內形成為例如渦卷狀。又,亦可形成為環狀,而構成高頻天線13之天線可為一根,亦可為複數根。 The antenna container 3 on the shower head 2 is provided with a high-frequency antenna 13 so as to face the side opposite to the plasma generation space S side of the shower head 2 . The high-frequency antenna 13 is made of a conductive material, such as copper, and is separated from the shower head 2 by a spacer (not shown) made of an insulating member, and will be arranged in a position corresponding to the rectangular shower head 2. The in-plane is formed into, for example, a spiral shape. Also, it may be formed in a loop shape, and the antenna constituting the high-frequency antenna 13 may be one or plural.

高頻天線13係透過供電線16、匹配器17而連接至第1高頻電源18。然後,電漿處理期間,係透過從第1高頻電源18所延伸之供電線16來將例如13.56MHz的高頻電力供應至高頻天線13。藉此,透過如後述般作為金屬窗功能之噴淋頭2所激發之迴路(loop)電流,便會在腔室4內形成感應電場。然後,藉由此感應電場,在腔室4內之噴淋頭2正下方的電漿產生空間S中便會使從噴淋頭2所供應之處理氣體電漿化,並產生感應耦合電漿。亦即,高頻天線13及第1高頻電源18係作為電漿產生機構來發揮功能。 The high-frequency antenna 13 is connected to a first high-frequency power supply 18 through a power supply line 16 and a matching unit 17 . Then, during the plasma processing, high-frequency power of, for example, 13.56 MHz is supplied to the high-frequency antenna 13 through the power supply line 16 extending from the first high-frequency power source 18 . Thereby, an induced electric field will be formed in the chamber 4 through the loop current excited by the shower head 2 which functions as the metal window as described later. Then, by this induced electric field, the process gas supplied from the shower head 2 is plasmaized in the plasma generating space S directly below the shower head 2 in the chamber 4, and inductively coupled plasma is generated. . That is, the high-frequency antenna 13 and the first high-frequency power supply 18 function as plasma generating means.

腔室4內的底部係以夾置著噴淋頭2而與高頻天線13對向之方式,透過絕緣體構件24而固定有用以載置作為被處理基板之矩形FPD用玻璃基板(以下僅稱為基板)G的載置台23。載置台23係以導電性材料,例如表面被陽極氧化處理後之鋁來加以構成。載置台23所載置之基板G係藉由靜電吸盤(未圖式)來加以吸附保持。 The bottom of the chamber 4 faces the high-frequency antenna 13 with the shower head 2 interposed therebetween, and a rectangular FPD glass substrate (hereinafter referred to simply as the substrate to be processed) is fixed through the insulator member 24 for placing the substrate to be processed. is the mounting table 23 for the substrate G. The mounting platform 23 is made of conductive material, such as aluminum whose surface is anodized. The substrate G placed on the mounting table 23 is sucked and held by an electrostatic chuck (not shown).

載置台23之上部周緣部係設有絕緣性的遮蔽環25a,載置台23之周面係設有絕緣環25b。載置台23係透過本體容器1之底壁、絕緣體構件24而插設有用以搬出入基板G之升降銷26。升降銷26係藉由本體容器1外所設置之升降機構(未圖式)來升降驅動以進行基板G的搬出入。 An insulating shielding ring 25 a is provided on the upper peripheral portion of the mounting table 23 , and an insulating ring 25 b is provided on the peripheral surface of the mounting table 23 . The mounting table 23 is inserted through the bottom wall of the main body container 1 and the insulator member 24 , and lift pins 26 for carrying in and out the substrate G are inserted. The lift pin 26 is driven up and down by a lift mechanism (not shown) provided outside the main body container 1 to carry out the substrate G in and out.

本體容器1外係設有匹配器28及第2高頻電源29,載置台23係藉由供電線28a而透過匹配器28連接有第2高頻電源29。此第2高頻電源29在電漿處理中會將偏壓用之高頻電力,例如頻率為3.2MHz之高頻電力施加至載置台23。藉由以此偏壓用高頻電力所產生之自偏壓,能有效地使腔室4內所產生之電漿中的離子被吸引至基板G。 A matching device 28 and a second high-frequency power source 29 are provided outside the main body container 1, and the mounting table 23 is connected to the second high-frequency power source 29 through the matching device 28 through a power supply line 28a. This second high-frequency power supply 29 applies high-frequency power for bias voltage, for example, high-frequency power with a frequency of 3.2 MHz, to the mounting table 23 during plasma processing. Ions in the plasma generated in the chamber 4 can be attracted to the substrate G efficiently by the self-bias voltage generated by high-frequency power for this bias voltage.

再者,載置台23內為了控制基板G的溫度,係設有由加熱器等加熱機構或冷媒流道等所構成之溫度控制機構及溫度感應器(均未圖示)。針對該等機構或構件之配管或配線均是透過本體容器1底面及絕緣體構件24所設置之開口部1b來被導出至本體容器1外。 Moreover, in order to control the temperature of the substrate G in the mounting table 23, a temperature control mechanism and a temperature sensor (both not shown) constituted by a heating mechanism such as a heater or a refrigerant flow path, etc. are provided. The piping or wires for these mechanisms or components are led out of the main body container 1 through the opening 1 b provided on the bottom surface of the main body container 1 and the insulator member 24 .

腔室4的側壁4a係設有用以將基板G搬出入之搬出入口27a及將其加以開閉之閘閥27。又,腔室4底部係透過排氣管31而連接有含真空泵等之排氣裝置30。藉由此排氣裝置30,會使腔室4內被排氣,而在電漿處理中使得腔室4內被設定、維持在既定的真空氛圍(例如1.33Pa)。 The side wall 4a of the chamber 4 is provided with a carry-out entrance 27a for carrying the substrate G in and out, and a gate valve 27 for opening and closing it. Also, the bottom of the chamber 4 is connected to an exhaust device 30 including a vacuum pump and the like through an exhaust pipe 31 . With the exhaust device 30, the inside of the chamber 4 is exhausted, so that the inside of the chamber 4 is set and maintained at a predetermined vacuum atmosphere (for example, 1.33Pa) during the plasma treatment.

載置台23所載置之基板G內面側係形成有細微空間(未圖示),並設有用以供應作為一定壓力之熱傳遞用氣體的He氣體之He氣體流道41。如此般地藉由供應熱傳遞用氣體至基板G的內面側,便可抑制在真空下基板G因電漿處理所致之溫度上升或溫度變化。 A fine space (not shown) is formed on the inner side of the substrate G placed on the mounting table 23, and a He gas channel 41 for supplying He gas as a heat transfer gas at a constant pressure is provided. By supplying the heat-transfer gas to the inner surface side of the substrate G in this way, it is possible to suppress a temperature rise or a temperature change of the substrate G due to plasma processing under vacuum.

此種感應耦合電漿處理裝置進一步具有控制部100。控制部100係由電腦所構成,具有由控制電漿處理裝置之各構成部的CPU所構成之主控制部、輸入裝置、輸出裝置、顯示裝置及記憶裝置。記憶裝置係記憶有以電漿處理裝置所實行之各種處理的參數,又,設置有儲存了用以控制電漿處理裝置所實行之處理的程式,亦即處理配方之記憶媒體。主控制部會控制為能將記憶媒體所記憶之既定的處理配方叫出,並基於該處理配方來使電漿處理裝置實行既定的處理。 Such an inductively coupled plasma processing apparatus further includes a control unit 100 . The control unit 100 is constituted by a computer, and has a main control unit constituted by a CPU for controlling each constituent unit of the plasma processing apparatus, an input device, an output device, a display device, and a memory device. The memory device memorizes the parameters of various treatments performed by the plasma treatment device, and is provided with a memory medium storing programs for controlling the treatments performed by the plasma treatment device, that is, treatment recipes. The main control unit controls to recall the predetermined processing recipe stored in the storage medium, and causes the plasma processing apparatus to execute predetermined processing based on the processing recipe.

接著,就噴淋頭2做更詳細的說明。 Next, the shower head 2 will be described in more detail.

感應耦合電漿係藉由使高頻電流流經高頻天線而在其周圍感生磁場,利用藉由該磁場所激發之感應電場來產生高頻放電,並藉此所產生之電漿。在使用1片金屬窗作為腔室4之頂壁的情況,於面內繞周向所設置之高頻天線13因為渦電流及磁場無法到達金屬窗的內面側,即電漿產生空間S側,故不會產生電漿。因此,本實施形態係以絕緣構件7將作為金屬窗功能之噴淋頭2分割成複數個構造,以使因流經高頻天線13之高頻電流所產生之磁場及渦電流會到達電漿產生空間S。 Inductively coupled plasma is to induce a magnetic field around the high-frequency antenna by making high-frequency current flow through it, and use the induced electric field excited by the magnetic field to generate a high-frequency discharge, thereby generating plasma. In the case of using a metal window as the top wall of the chamber 4, the high-frequency antenna 13 installed in the circumferential direction in the plane cannot reach the inner side of the metal window, that is, the side of the plasma generation space S, due to eddy currents and magnetic fields. , so no plasma is generated. Therefore, in this embodiment, the shower head 2 functioning as a metal window is divided into multiple structures by the insulating member 7, so that the magnetic field and eddy current generated by the high-frequency current flowing through the high-frequency antenna 13 can reach the plasma. Create a space S.

噴淋頭2如上述般,係透過氣體供應配管21而從處理氣體供應機構20來被導入有處理氣體。然後,被導入之處理氣體會通過氣體擴散空間51及複數氣體噴出孔54而噴出至腔室4內之電漿產生空間。噴淋頭2會因其自身的溫度調整及來自電漿的入熱而有變成為高溫的情況。本實施形態之噴淋頭2在高溫 下會具有耐熱性。具體而言,即便在200℃之高溫時亦具有充分耐熱性。 The shower head 2 is introduced with the processing gas from the processing gas supply mechanism 20 through the gas supply pipe 21 as described above. Then, the introduced processing gas is ejected to the plasma generation space in the chamber 4 through the gas diffusion space 51 and the plurality of gas ejection holes 54 . The shower head 2 may become high temperature due to its own temperature adjustment and the heat input from the plasma. Shower head 2 of the present embodiment is at high temperature It will be heat resistant. Specifically, it has sufficient heat resistance even at a high temperature of 200°C.

圖2係顯示構成圖1之電漿處理裝置的噴淋頭之本體部的氣體噴出口一部分之圖式。 FIG. 2 is a diagram showing a part of the gas ejection port of the main body of the shower head constituting the plasma processing apparatus of FIG. 1 .

含氣體噴出部53之本體部50係具有基材61、複數個套筒26、第1火焰噴塗皮膜63及第2火焰噴塗皮膜64。 The main body part 50 including the gas ejection part 53 has a base material 61 , a plurality of sleeves 26 , a first flame sprayed film 63 and a second flame sprayed film 64 .

基材61為非磁性金屬製,較佳係以Al材料(Al或Al合金)來加以形成。Al材料可舉出有例如JIS之6000系列。基材61為Al材料的情況,會依需要於側面設有陽極氧化皮膜61a。 The base material 61 is made of non-magnetic metal, and is preferably formed of Al material (Al or Al alloy). Examples of Al materials include JIS 6000 series. When the base material 61 is an Al material, an anodic oxide film 61a is provided on the side surface as needed.

複數個套筒62係以不鏽鋼、哈氏合金(Hastelloy)般的鎳基合金等之耐蝕性金屬來加以構成,並成為具段差的圓筒狀,而能被嵌入至基材61所形成之對應的凹部(套筒裝設孔)。各套筒62內部係形成有從氣體擴散空間51朝電漿產生空間S貫通之氣體噴出孔54。 The plurality of sleeves 62 are made of corrosion-resistant metals such as stainless steel and Hastelloy (Hastelloy)-like nickel-based alloys, and are formed into a cylindrical shape with a step difference, and can be embedded in the corresponding parts formed by the base material 61. recess (socket installation hole). Inside each sleeve 62 is formed a gas ejection hole 54 penetrating from the gas diffusion space 51 to the plasma generation space S.

氣體噴出孔54係具有氣體擴散空間51側之大徑部54a,及電漿產生空間S側之小徑部54b。然後,小徑部54b之下端會成為面臨電漿產生空間S之開口部54c。使電漿產生空間S為小徑部54b是因為要防止電漿進入至氣體噴出孔54深處之故。小徑部54b的內徑係設定在例如0.5~1mm。 The gas ejection hole 54 has a large-diameter portion 54a on the side of the gas diffusion space 51 and a small-diameter portion 54b on the side of the plasma generation space S. Then, the lower end of the small-diameter portion 54b becomes the opening 54c facing the plasma generation space S. As shown in FIG. The purpose of making the plasma generating space S the small-diameter portion 54b is to prevent the plasma from entering deep into the gas ejection hole 54 . The inner diameter of the small-diameter portion 54b is set at, for example, 0.5 to 1 mm.

套筒62係藉由熱等靜壓燒結(HIP)來被接合(HIP接合)於基材61,會與基材61之間以施予壓縮應力之狀態來無間隙地密接於基材61。 The sleeve 62 is bonded (HIP bonded) to the base material 61 by hot isostatic pressing (HIP), and is in close contact with the base material 61 in a state where compressive stress is applied to the base material 61 without gaps.

又,基材61與套筒62的氣體擴散空間51側之一面以及電漿產生空間S側之一面如圖所示般,較佳均是成為均面。 In addition, the base material 61 and the side of the sleeve 62 on the side of the gas diffusion space 51 and the side of the plasma generation space S are preferably uniform as shown in the figure.

第1火焰噴塗皮膜63係將對處理氣體具有耐蝕性之材料火焰噴塗而形成在基材61之氣體擴散空間51側的一面。第1火焰噴塗皮膜63較佳係含浸有 含浸材。 The first flame sprayed film 63 is formed on the gas diffusion space 51 side surface of the substrate 61 by flame spraying a material having corrosion resistance to the process gas. The first flame spray coating 63 is preferably impregnated with Impregnated material.

第1火焰噴塗皮膜63係在使用針對基材61有高腐蝕性氣體來作為處理氣體的情況而會保護基材61者。第1火焰噴塗皮膜63係以陶瓷來加以構成。構成第1火焰噴塗皮膜63之陶瓷較佳為氧化鋁(Al2O3)或氧化鋯(ZrO2)。Al2O3火焰噴塗皮膜在使用Cl2氣體來蝕刻處理Al時,於噴淋頭2上升至200℃左右的情況是有效的。第1火焰噴塗皮膜63的厚度較佳為80~200μm之範圍。另外,在處理氣體腐蝕基材61之虞較小的情況,亦可不設置第1火焰噴塗皮膜63。 The first flame sprayed film 63 protects the base material 61 when a gas highly corrosive to the base material 61 is used as the processing gas. The first flame sprayed film 63 is made of ceramics. The ceramic constituting the first flame sprayed film 63 is preferably alumina (Al 2 O 3 ) or zirconia (ZrO 2 ). The Al 2 O 3 flame spray coating is effective when the shower head 2 is raised to about 200° C. when the Al is etched using Cl 2 gas. The thickness of the first flame sprayed film 63 is preferably in the range of 80 to 200 μm. In addition, when there is little risk of the processing gas corroding the base material 61, the first flame sprayed film 63 may not be provided.

第2火焰噴塗皮膜64係將對處理氣體之電漿具有耐電漿性之材料火焰噴塗而形成在基材61之電漿產生空間S側的一面。第2火焰噴塗皮膜64較佳係含浸有含浸材。 The second flame spray coating 64 is formed by flame spraying a material having plasma resistance to the plasma of the process gas and formed on the plasma generation space S side surface of the substrate 61 . The second flame spray coating 64 is preferably impregnated with an impregnating material.

第2火焰噴塗皮膜64係用以由電漿來保護基材61者。第2火焰噴塗皮膜64亦是以陶瓷來加以構成。第2火焰噴塗皮膜64較佳係耐電漿性高之氧化釔(Y2O3)火焰噴塗皮膜或Y-Al-Si-O系混合火焰噴塗皮膜(釔、鋁及氧化矽(或氮化矽)之火焰噴塗皮膜)等之含氧化釔者。依使用之處理氣體,亦可為Al2O3火焰噴塗皮膜。又,藉由於第2火焰噴塗皮膜64含浸有含浸材,便能使火焰噴塗皮膜所存在之氣孔封閉,可更加提高耐電漿性,並提高耐銷孔腐蝕。 The second flame spray coating 64 is used to protect the base material 61 from plasma. The second flame spray coating 64 is also made of ceramics. The second flame sprayed film 64 is preferably a yttrium oxide (Y 2 O 3 ) flame sprayed film with high plasma resistance or a Y-Al-Si-O mixed flame sprayed film (yttrium, aluminum and silicon oxide (or silicon nitride) ) containing yttrium oxide. According to the processing gas used, it can also be Al 2 O 3 flame spray coating. In addition, by impregnating the second flame sprayed coating 64 with the impregnating material, the pores existing in the flame sprayed coating can be closed, the plasma resistance can be further improved, and the pinhole corrosion resistance can be improved.

第2火焰噴塗皮膜64較佳為表面有耐電漿性高之準緻密火焰噴塗皮膜。所謂準緻密火焰噴塗皮膜係指氣孔率較通常的火焰噴塗皮膜要低之火焰噴塗皮膜,相對於通常之皮膜的氣孔率為3%~5%,則是2~3%。藉由以準緻密火焰噴塗,便能更加提高耐電漿性。又,藉由將火焰噴塗皮膜之準緻密化及含浸材加以組合,便能更加一層提高耐電漿性。第2火焰噴塗皮膜64之厚度較佳為150~500μm的範圍。 The second flame sprayed coating 64 is preferably a quasi-dense flame sprayed coating having high plasma resistance on the surface. The so-called quasi-dense flame sprayed film refers to the flame sprayed film with a lower porosity than the usual flame sprayed film. Compared with the usual film’s porosity of 3%~5%, it is 2~3%. By spraying with quasi-dense flame, the plasma resistance can be further improved. In addition, by combining the quasi-densification of the flame sprayed film and the impregnation material, the plasma resistance can be further improved. The thickness of the second flame sprayed film 64 is preferably in the range of 150 to 500 μm.

在噴淋頭2之溫度上升至200℃以上之高溫的情況,被含浸於第1火焰噴塗皮膜63及第2火焰噴塗皮膜64之含浸材較佳係使用耐熱性高者。又,作為含浸材較佳是可浸透至準緻密皮膜的較佳充填性之樹脂含浸材。由於此般論點,較佳是耐熱性及耐蝕性優異之高充填性耐熱環氧樹脂。 When the temperature of the shower head 2 rises to a high temperature of 200° C. or higher, the impregnating material impregnated into the first flame sprayed film 63 and the second flame sprayed film 64 is preferably one with high heat resistance. Also, the impregnating material is preferably a resin impregnating material with good filling properties that can penetrate to a quasi-dense film. From such a point of view, a high-fillability heat-resistant epoxy resin excellent in heat resistance and corrosion resistance is preferable.

接著,就使用此般構成之感應耦合電漿處理裝置以對基板G施以電漿處理,例如電漿蝕刻處理時之處理動作來加以說明。 Next, the processing operation when plasma processing, such as plasma etching processing, is performed on the substrate G using the inductively coupled plasma processing apparatus configured in this way will be described.

首先,在打開閘閥27的狀態下藉由搬送機構(未圖示)來將形成有既定膜之基板G從搬出入口27a搬入至腔室4內,並載置於載置台23之載置面。接著,藉由靜電吸盤(未圖示)將基板G固定在載置台23上。然後,藉由排氣裝置30將腔室4內真空排氣,並藉由壓力控制閥(未圖示)來將腔室4內維持在例如0.66~26.6Pa左右之壓力氛圍。在此狀態下,透過氣體供應管21將處理氣體從處理氣體供應機構20朝具有金屬窗功能之噴淋頭2供應,再從噴淋頭2將處理氣體噴淋狀地噴出至腔室4內。基板G內面側之空間係透過He氣體流道41而供應He氣體來作為熱傳遞用氣體。 First, with the gate valve 27 open, the substrate G on which a predetermined film is formed is carried into the chamber 4 from the carry-out port 27 a by a transfer mechanism (not shown), and placed on the mounting surface of the mounting table 23 . Next, the substrate G is fixed on the mounting table 23 by an electrostatic chuck (not shown). Then, the chamber 4 is vacuum-exhausted by the exhaust device 30, and the pressure atmosphere in the chamber 4 is maintained at, for example, about 0.66-26.6Pa by a pressure control valve (not shown). In this state, the processing gas is supplied from the processing gas supply mechanism 20 to the shower head 2 with the metal window function through the gas supply pipe 21, and then the processing gas is sprayed into the chamber 4 from the shower head 2 . The space on the inner surface side of the substrate G is supplied with He gas through the He gas channel 41 as heat transfer gas.

此時,會將本體容器1、基材部52溫度調整至高溫,且產生電漿後,噴淋頭2之溫度便會成為200℃之高溫。 At this time, the temperature of the main body container 1 and the base material part 52 is adjusted to a high temperature, and after the plasma is generated, the temperature of the shower head 2 becomes a high temperature of 200°C.

接著,從高頻電源18將例如13.56MHz之高頻施加至高頻天線13,藉此而透過作為金屬窗功能之噴淋頭2來在腔室4內產生均勻的感應電場。藉由如此所產生之感應電場,處理氣體便會在腔室4內之電漿產生空間S電漿化,而產生高密度的感應耦合電漿。藉由此電漿來對基板G進行電漿蝕刻處理。 Next, a high frequency such as 13.56 MHz is applied to the high frequency antenna 13 from the high frequency power supply 18, thereby generating a uniform induced electric field in the chamber 4 through the shower head 2 functioning as a metal window. With the induced electric field generated in this way, the processing gas will be plasmaized in the plasma generation space S in the chamber 4 to generate high-density inductively coupled plasma. Using this plasma, the substrate G is subjected to plasma etching treatment.

接著,就上述噴淋頭2之製造方法來加以說明。 Next, a method of manufacturing the above-mentioned shower head 2 will be described.

圖3係用以說明噴淋頭之製造方法的工序剖視圖。製造噴淋頭2之際,首先如 圖3(a)所示,會準備形成有套筒裝設孔61b之基材61(step 1)。然後,將套筒62裝設在基材61之套筒裝設孔61b(step 2;圖3(b))。接著,將基材61及裝設後的套筒62做HIP處理,來將套筒62HIP接合在基材61(step 3;圖3(c))。之後,將基材61與套筒62的氣體擴散空間51側之一面及電漿產生空間S側之一面均進行研磨加工或研削加工以成為均面(step 4;圖3(d))。之後,在基材61與套筒62的氣體擴散空間側之一面及電漿產生空間S側之一面分別形成第1火焰噴塗皮膜63及第2火焰噴塗皮膜64(step 5;圖3(e))。在進行陽極氧化處理所致的陽極氧化皮膜61a之形成的情況,較佳是在HIP接合套筒62後再進行。 Fig. 3 is a sectional view illustrating the process of the shower head manufacturing method. When manufacturing the sprinkler head 2, first as As shown in FIG. 3( a ), the substrate 61 having the sleeve installation hole 61b formed thereon is prepared (step 1). Then, the sleeve 62 is installed in the sleeve installation hole 61b of the substrate 61 (step 2; FIG. 3(b)). Next, the substrate 61 and the installed sleeve 62 are subjected to HIP treatment, so that the sleeve 62 is HIP bonded to the substrate 61 (step 3; FIG. 3(c)). Afterwards, the surfaces of the substrate 61 and the sleeve 62 on the gas diffusion space 51 side and the plasma generation space S side are both ground or ground to become uniform (step 4; FIG. 3( d )). Afterwards, the first flame sprayed film 63 and the second flame sprayed film 64 are formed on the side of the gas diffusion space and the side of the plasma generation space S of the substrate 61 and the sleeve 62 respectively (step 5; FIG. 3( e ) ). When forming the anodized film 61a by anodizing, it is preferable to perform it after HIP joining the sleeve 62 .

HIP處理係針對處理對象同時施加以Ar氣體等非活性氣體作為壓力媒體之等向性壓力及高溫的處理。本實施形態中,基材61為Al材料的情況,HIP處理較佳係在壓力為50~200MPa,溫度為300~550℃來加以進行。基材61為6000系列等之鋁製的情況,在300℃左右會開始軟化,而固熔溫度為430~530℃,故可在300~550℃下適當地進行HIP處理。更佳為400~450℃。又,關於壓力,在100~150MPa下可得到良好的HIP效果。 HIP treatment is a treatment that simultaneously applies isotropic pressure and high temperature using an inert gas such as Ar gas as a pressure medium to the treatment object. In this embodiment, when the base material 61 is an Al material, the HIP treatment is preferably performed at a pressure of 50-200 MPa and a temperature of 300-550°C. When the base material 61 is made of aluminum such as 6000 series, it will start to soften at about 300°C, and the solid solution temperature is 430~530°C, so HIP treatment can be properly performed at 300~550°C. More preferably, it is 400~450°C. Also, regarding the pressure, a good HIP effect can be obtained at 100 to 150 MPa.

藉此,套筒62便會相對基材61而為HIP接合後狀態。亦即,藉由進行HIP處理,套筒62及基材61之間會成為被施予壓縮應力之狀態,使得套筒62無間隙地相對於基材61而密接。 Thereby, the sleeve 62 will be in a HIP bonded state relative to the base material 61 . That is, by performing the HIP treatment, a compressive stress is applied between the sleeve 62 and the base material 61 , so that the sleeve 62 is in close contact with the base material 61 without a gap.

HIP處理係在高溫(例如300℃以上)下進行,故即便噴淋頭2之使用溫度成為200℃以上,套筒62及基材61之間的壓縮應力仍會殘留,兩者仍會維持無間隙地密接之狀態。因此,可維持高耐熱性。本實施形態中,由於套筒62為金屬製,故耐熱衝擊性高,只要殘留有HIP效果便可獲得至300℃左右的高耐熱性。 HIP treatment is carried out at high temperature (for example, above 300°C), so even if the operating temperature of the shower head 2 becomes above 200°C, the compressive stress between the sleeve 62 and the base material 61 will still remain, and the two will remain intact. The state of close contact with gaps. Therefore, high heat resistance can be maintained. In this embodiment, since the sleeve 62 is made of metal, thermal shock resistance is high, and high heat resistance up to about 300° C. can be obtained as long as the HIP effect remains.

如專利文獻1之技術般在以嵌合將套筒接著於基材的情況,當噴淋頭2之溫度成為200℃時,套筒與基材之間便會容易產生間隙。如圖4所示,當套筒62與基材61之間產生間隙66時,第1及第2火焰噴塗皮膜63,64的套筒62與基材61之境界部所對應之部分便會變得容易產生龜裂67。又,套筒62與基材61之境界部的基材61側會發生腐蝕。 In the case of bonding the sleeve to the substrate by fitting like the technique of Patent Document 1, when the temperature of the shower head 2 becomes 200° C., a gap is likely to be generated between the sleeve and the substrate. As shown in Figure 4, when a gap 66 is formed between the sleeve 62 and the base material 61, the portion corresponding to the boundary between the sleeve 62 and the base material 61 of the first and second flame sprayed coatings 63, 64 will change. It is easy to produce cracks67. In addition, corrosion occurs on the base material 61 side of the boundary portion between the sleeve 62 and the base material 61 .

相對於此,本實施形態係使套筒62HIP接合於基材61,即便在200℃的高溫使用時,套筒62與基材61之間仍無間係地加以密接,故會抑制第1火焰噴塗皮膜63及第2火焰噴塗皮膜64發生龜裂,而難以產生腐蝕的問題。 On the other hand, in this embodiment, the sleeve 62 is HIP bonded to the base material 61. Even when used at a high temperature of 200° C., the sleeve 62 and the base material 61 are seamlessly bonded, so that the first flame spraying is suppressed. Cracks occur in the film 63 and the second flame sprayed film 64 , and corrosion hardly occurs.

又,如圖5所示,在基材61與套筒62的氣體擴散空間51側之一面及電漿產生空間S側之一面的境界部分具有段差的情況,對應於第1火焰噴塗皮膜63及第2火焰噴塗皮膜64之段差部分的膜質會與其他部分不同,而有容易產生龜裂之虞。因此,基材61與套筒62的氣體擴散空間51側之一面,以及電漿產生空間S側之一面較佳係進行研磨加工以使其成為均面。藉此,第1火焰噴塗皮膜63及第2火焰噴塗皮膜64之基材61與套筒62的境界部分不會產生段差,可提高抑制龜裂發生的效果。 Also, as shown in FIG. 5 , when there is a level difference between the substrate 61 and the side of the sleeve 62 on the side of the gas diffusion space 51 and the side of the plasma generation space S, corresponding to the first flame sprayed coating 63 and The film quality of the step portion of the second flame sprayed film 64 is different from that of other portions, and cracks may easily occur. Therefore, the surfaces of the base material 61 and the sleeve 62 on the side of the gas diffusion space 51 and the side of the plasma generation space S are preferably ground so as to be uniform. Thereby, there is no level difference between the base material 61 and the sleeve 62 of the first flame sprayed film 63 and the second flame sprayed film 64, and the effect of suppressing the generation of cracks can be enhanced.

然而,在僅以將套筒62HIP接合便可充分抑制火焰噴塗皮膜之龜裂的情況或段差較小的情況,便不一定需要此般的研磨加工。 However, when cracking of the flame spray coating can be sufficiently suppressed only by HIP joining the sleeve 62 or when the level difference is small, such grinding processing is not necessarily required.

第1火焰噴塗皮膜63及第2火焰噴塗皮膜64係藉由將上述般材料的粒子熔融或者接近其之狀態而噴附到基材61與套筒62的氣體擴散空間51側之一面及電漿產生空間S側之一面來加以形成。如上述般,第1火焰噴塗皮膜63並非一定需要。 The first flame sprayed film 63 and the second flame sprayed film 64 are sprayed on the base material 61 and the side of the sleeve 62 on the side of the gas diffusion space 51 and the plasma by melting the particles of the above-mentioned materials or in a state close to it. Create one side of the space S side to be formed. As described above, the first flame spray coating 63 is not necessarily required.

形成第1火焰噴塗皮膜63及第2火焰噴塗皮膜64之時,在使用溫度 為200℃的情況,藉由將基材加熱至其接近的150~250℃來進行火焰噴塗,便可使對第1火焰噴塗皮膜63及第2火焰噴塗皮膜64之龜裂更加難以產生。 When forming the first flame sprayed film 63 and the second flame sprayed film 64, at the use temperature In the case of 200°C, by heating the substrate to a temperature close to 150-250°C for flame spraying, cracks on the first flame sprayed film 63 and the second flame sprayed film 64 can be made more difficult to occur.

套筒62與基材61之間由於必須藉由HIP處理來加以密接,故在形成陽極氧化皮膜61a的情況,HIP處理會在不存在有陽極氧化皮膜61a的狀態下進行,而陽極氧化皮膜61a的形成則是在HIP處理後才加以進行。又,第1及第2火焰噴塗皮膜63,64因必須直接形成於基材61,故在陽極氧化時,該等的面最好是被加以遮蔽。再者,在未形成第1火焰噴塗皮膜63的情況,基材61的氣體擴散空間51側之一面便會是形成有陽極氧化皮膜61a後的狀態。 Since the sleeve 62 and the base material 61 must be closely bonded by HIP treatment, in the case of forming the anodized film 61a, the HIP treatment will be performed in the absence of the anodized film 61a, and the anodized film 61a The formation of is carried out after the HIP treatment. In addition, since the first and second flame sprayed coatings 63 and 64 must be formed directly on the base material 61, it is preferable to shield these surfaces during anodic oxidation. In addition, when the 1st flame spraying film 63 is not formed, one surface of the base material 61 by the side of the gas diffusion space 51 will be the state which formed the anodic oxide film 61a.

<第2實施形態> <Second Embodiment>

接著,就第2實施形態來加以說明。 Next, a second embodiment will be described.

本實施形態中,電漿處理裝置的基本結構雖與第1實施形態相同,但僅有噴淋頭之氣體噴出部的結構與第1實施形態不同。 In this embodiment, the basic structure of the plasma processing apparatus is the same as that of the first embodiment, but only the structure of the gas ejection portion of the shower head is different from the first embodiment.

圖6係顯示構成第2實施形態之電漿處理裝置的噴淋頭之本體部的氣體噴出部一部分之圖式。 Fig. 6 is a diagram showing a part of the gas ejection part of the main body part of the shower head constituting the plasma processing apparatus according to the second embodiment.

氣體噴出部53’係具有基材61、複數個套筒62’、第1火焰噴塗皮膜63及第2火焰噴塗皮膜64。基材61、第1火焰噴塗皮膜63及第2火焰噴塗皮膜64係構成為與第1實施形態相同。與第1實施形態同樣地,在處理氣體對基材61腐蝕之虞較小的情況,亦可不設置第1火焰噴塗皮膜63。 The gas ejection part 53' has a base material 61, a plurality of sleeves 62', a first flame sprayed film 63 and a second flame sprayed film 64. The structure of the base material 61, the 1st flame sprayed film 63, and the 2nd flame sprayed film 64 is the same as that of 1st Embodiment. Similarly to the first embodiment, when there is little risk of corrosion of the base material 61 by the processing gas, the first flame sprayed film 63 may not be provided.

套筒62’係以Al2O3般的陶瓷來加以形成,會成為圓筒狀而被嵌入至基材61所形成之對應凹部(套筒裝設孔)。各套筒62’內部係形成有從氣體擴散空間51朝電漿產生空間S貫通之氣體噴出孔54’。由於陶瓷難以加工,故套筒62’ 會與第1實施形態的套筒62不同,基本形狀會是直線狀,氣體噴出孔54’亦是直線狀。氣體噴出孔54’的內徑係設定在例如0.5~1mm。套筒62’的外周部中央係形成有軌道般的溝部62’a。 The sleeve 62 ′ is formed of Al 2 O 3 -like ceramics, and becomes cylindrical to be inserted into the corresponding concave portion (sleeve installation hole) formed in the base material 61 . A gas ejection hole 54' penetrating from the gas diffusion space 51 to the plasma generation space S is formed inside each sleeve 62'. Since ceramics are difficult to process, the sleeve 62' is different from the sleeve 62 of the first embodiment in that its basic shape is linear, and the gas ejection hole 54' is also linear. The inner diameter of the gas ejection hole 54' is set at, for example, 0.5 to 1 mm. A track-like groove 62'a is formed in the center of the outer periphery of the sleeve 62'.

套筒62’係藉由HIP處理來接合(HIP接合)於基材61,並以與基材61之間施予壓縮應力的狀態來無間隙地密接於基材61。Al基材之HIP的接合溫度由於幾乎不會產生材料的相互擴散,故直線狀的套筒有被拔移之虞。相對於此,套筒62’雖是直線狀,但由於外周部形成有溝部62’a,故HIP接合時,基材61會流入至溝部62'a內而使基材61密接於套筒62',能防止套筒62’的拔移。 The sleeve 62' is bonded to the base material 61 by HIP processing (HIP bonding), and is in close contact with the base material 61 without a gap in a state where compressive stress is applied to the base material 61. Since the joining temperature of the HIP of the Al base material hardly causes interdiffusion of materials, the linear sleeve may be pulled out. On the other hand, although the sleeve 62' is linear, since the groove 62'a is formed on the outer peripheral portion, the substrate 61 flows into the groove 62'a during HIP bonding, and the substrate 61 is tightly adhered to the sleeve 62. ', can prevent the pull-out of the sleeve 62'.

本實施形態較佳地亦是使基材61與套筒62’的氣體擴散空間51側之一面及電漿產生空間S側之一面均成為均面。 In this embodiment, it is also preferable to make the substrate 61 and the side of the sleeve 62' on the side of the gas diffusion space 51 and the side of the plasma generation space S all be uniform.

在噴淋頭之製造方法時,可以和第1實施形態相同的step 1~step 5來加以進行。本實施形態亦與第1實施形態同樣地,藉由進行HIP處理,能使套筒62’與基材61之間成為被施予壓縮應力之狀態,讓套筒62'相對於基材61而無間隙地加以密接。然後,噴淋頭2即便成為200℃的高溫,仍會存在有套筒62’與基材61之間的壓縮應力,能維持兩者無間隙的密接狀態,而維持著至200℃左右的耐熱性。然而,構成套筒62’之陶瓷的熱膨脹係數會較構成構成基材61之Al般的金屬要小,故會因與基材61的熱膨脹差,而有耐熱性較第1實施形態之金屬製套筒62要低的傾向。 In the method of manufacturing the shower head, steps 1 to 5 that are the same as those in the first embodiment can be performed. In this embodiment, as in the first embodiment, by performing the HIP treatment, a compressive stress can be applied between the sleeve 62' and the base material 61, so that the sleeve 62' can be stretched with respect to the base material 61. Closely bond without gaps. Then, even if the shower head 2 becomes a high temperature of 200°C, there will still be compressive stress between the sleeve 62' and the base material 61, and the two can maintain a close contact state without gaps, and maintain a heat-resistant temperature of about 200°C. sex. However, the thermal expansion coefficient of the ceramics constituting the sleeve 62' is smaller than that of the Al-like metal constituting the base material 61, so due to the difference in thermal expansion with the base material 61, the heat resistance is lower than that of the metal of the first embodiment. The sleeve 62 tends to be low.

本實施形態中,step 4的研磨加工亦非必須,在僅將套筒62'HIP接合便可充分抑制火焰噴塗皮膜之龜裂的情況或段差較小的情況,亦可不進行此般研磨加工。 In this embodiment, the grinding process of step 4 is also not essential, and it is not necessary to perform such grinding process when cracking of the flame spray coating can be sufficiently suppressed only by HIP-joining the sleeve 62' or when the step difference is small.

又,本實施形態中,在形成陽極氧化皮膜61a的情況,亦是在HIP 處理後來加以進行,火焰噴塗皮膜63,64的面最好是被加以遮蔽。再者,在不形成第1火焰噴塗皮膜63的情況,基材61的氣體擴散空間51側之一面則是形成有陽極氧化皮膜61a後之狀態。 Moreover, in this embodiment, when forming the anodic oxide film 61a, it is also in HIP For subsequent treatment, the faces of the flame sprayed films 63, 64 are preferably masked. In addition, when the 1st flame spraying film 63 is not formed, one surface of the base material 61 by the side of the gas diffusion space 51 is the state which formed the anodic oxide film 61a.

<實驗例> <Experiment example>

此處,針對圖2之構造及圖6之構造的噴淋頭之氣體噴出部,就以以往般接著套筒者與HIP接合者來進行耐熱性試驗。基材係使用Al(A6061),圖2之構造中係使用不鏽鋼(SUS316L)來作為金屬製套筒,圖6之構造中係使用Al2O3來作為陶瓷套筒。又,任一構造中,均是使用Al2O3火焰噴塗皮膜來作為氣體擴散空間側之第1火焰噴塗皮膜,使用含有Y2O3之混合火焰噴塗皮膜(SP火焰噴塗皮膜)來作為電漿產生空間S側之第2火焰噴塗皮膜。 Here, for the gas ejection part of the shower head with the structure shown in FIG. 2 and the structure shown in FIG. 6, the heat resistance test was carried out by conventionally connecting the sleeve and HIP joint. Al (A6061) is used as the base material, stainless steel (SUS316L) is used as the metal sleeve in the structure shown in Figure 2, and Al 2 O 3 is used as the ceramic sleeve in the structure shown in Figure 6. Also, in either structure, an Al 2 O 3 flame sprayed coating is used as the first flame sprayed coating on the side of the gas diffusion space, and a mixed flame sprayed coating (SP flame sprayed coating) containing Y 2 O 3 is used as the electrode. The second flame spray coating on the S side of the slurry generation space.

就該等噴淋頭改變溫度來進行耐熱性試驗。耐熱性試驗係使用高溫乾燥爐來對噴淋頭實施各溫度下之熱循環試驗。使用不鏽鋼製套筒的噴淋頭之結果顯示於圖7,使用陶瓷製套筒的噴淋頭之結果顯示於圖8。 The temperature resistance test was carried out on the sprinklers with varying temperatures. The heat resistance test uses a high-temperature drying oven to perform heat cycle tests at various temperatures on the sprinkler head. The results for the shower head using the stainless steel sleeve are shown in FIG. 7 and the results for the shower head using the ceramic sleeve are shown in FIG. 8 .

如圖7所示,使用不鏽鋼製套筒之圖2的構造中,與在接著套筒後的情況會於200℃有龜裂進入到火焰噴塗皮膜相比,在HIP接合套筒後的情況則至300℃仍未見到火焰噴塗皮膜的龜裂。 As shown in Fig. 7, in the structure of Fig. 2 using a stainless steel sleeve, compared with the case where a crack enters the flame sprayed film at 200°C after the sleeve is bonded, the case of the HIP jointed sleeve is less No cracking of the flame sprayed film was observed even at 300°C.

又,如圖8所示,使用陶瓷製套筒之圖6的構造中,與在接著套筒後的情況會於180℃有龜裂進入到火焰噴塗皮膜相比,在HIP接合套筒後的情況則至200℃仍未見到火焰噴塗皮膜的龜裂。 Also, as shown in FIG. 8, in the structure of FIG. 6 using a ceramic sleeve, compared to the case where cracks enter the flame spray coating at 180°C after bonding the sleeve, the HIP bonding sleeve In the case, no cracking of the flame sprayed coating was observed up to 200°C.

由以上可確認,在任一套筒中,藉由HIP接合套筒均較接著套筒的情況會更加提升耐熱性。 From the above, it was confirmed that in any sleeve, joining the sleeve by HIP improves the heat resistance more than the case of joining the sleeve.

<其他適用> <other applicable>

以上,雖已就實施形態加以說明,但本次揭示的實施形態的所有要點應被認為是例示而非限制者。上述實施形態在未脫離添附之申請專利範圍及其主旨下,亦可以各種形態做省略、置換、變更。 As mentioned above, although embodiment was demonstrated, all the points of the embodiment disclosed this time should be considered as an illustration and not a limiter. The above-mentioned embodiments can also be omitted, replaced, and changed in various forms without departing from the scope of the appended patent application and its gist.

例如,上述實施形態中,雖係顯示使用感應耦合電漿處理裝置來作為進行電漿蝕刻之電漿處理裝置的範例,但不限於此,只要氣體噴出部之基材是金屬噴淋頭的話,亦可為電容耦合電漿處理裝置等其他的電漿處理裝置。在電容耦合電漿處理裝置等的情況,便無需分割噴淋頭。 For example, in the above-mentioned embodiment, although the example of using the inductively coupled plasma processing device as the plasma processing device for plasma etching is shown, it is not limited to this, as long as the base material of the gas ejection part is a metal shower head, Other plasma processing devices such as capacitively coupled plasma processing devices may also be used. In the case of a capacitively coupled plasma processing device or the like, there is no need to divide the shower head.

又,上述實施形態中,雖以電漿蝕刻裝置為例來加以說明,但不限於此,若是使用電漿灰化或電漿CVD等腐蝕性高之氣體的電漿之電漿處理裝置均可適用。 In addition, in the above-mentioned embodiment, although the plasma etching device is used as an example to illustrate, it is not limited to this, and any plasma processing device using a plasma with a highly corrosive gas such as plasma ashing or plasma CVD can be used. Be applicable.

61:基材 61: Substrate

61b:套筒裝設孔 61b: Sleeve installation hole

62:套筒 62: Sleeve

63:第1火焰噴塗皮膜 63: The first flame sprayed film

64:第2火焰噴塗皮膜 64: The second flame spraying film

Claims (20)

一種噴淋頭之製造方法,係製造在對基板施予電漿所致之處理的電漿處理裝置中,將用以產生該電漿之處理氣體噴出至配置有該基板,且會產生電漿之腔室內的電漿產生空間之噴淋頭的噴淋頭之製造方法; A method of manufacturing a shower head, which is manufactured in a plasma processing device for applying plasma to a substrate, spraying the processing gas used to generate the plasma to the substrate on which the plasma is disposed, and generating the plasma The method of manufacturing the shower head of the plasma generating space in the chamber; 該噴淋頭具備:具有複數會噴出該處理氣體的氣體噴出孔之本體部;以及,設於該本體部內,會導入該處理氣體並連通於該氣體噴出孔之氣體擴散空間; The shower head is provided with: a main body part having a plurality of gas ejection holes capable of ejecting the processing gas; and a gas diffusion space provided in the main body part through which the processing gas is introduced and communicated with the gas ejection holes; 該製造方法具有:準備會構成該本體部之該氣體噴出孔的部分,且具有複數個套筒裝設孔的金屬製基材之工序; The manufacturing method includes: a step of preparing a metal base material that will constitute the gas ejection hole of the main body and has a plurality of sleeve mounting holes; 將其內部具有該氣體噴出孔之套筒裝設在該基材之各該套筒裝設孔之工序; a step of installing a sleeve having the gas ejection hole inside it in each of the sleeve installation holes of the substrate; 將該基材及該套筒做HIP處理,以將該套筒HIP接合於該基材之工序;以及 HIPing the substrate and the sleeve to HIP bond the sleeve to the substrate; and 於該基材及該套筒的該電漿產生空間側之一面形成陶瓷製的火焰噴塗皮膜之工序。 A step of forming a ceramic flame spray coating on the base material and the sleeve on the side of the plasma generation space. 如申請專利範圍第1項之噴淋頭之製造方法,其進一步具有:於該火焰噴塗皮膜形成前,以該基材及該套筒之該電漿產生空間側之一面會均面之方式來進行研磨加工或研削加工之工序。 The manufacturing method of the shower head as claimed in item 1 of the scope of the patent application further includes: before the formation of the flame sprayed film, the substrate and the side of the sleeve at the side of the plasma generation space are uniformly aligned. The process of grinding or grinding. 如申請專利範圍第1或2項之噴淋頭之製造方法,其中該基材係以鋁材來加以構成,該HIP處理係在300℃以上,550℃以下的溫度來加以進行。 Such as the method of manufacturing the shower head of claim 1 or 2, wherein the substrate is made of aluminum, and the HIP treatment is carried out at a temperature above 300°C and below 550°C. 如申請專利範圍第3項之噴淋頭之製造方法,其中該HIP處理係在400℃以上,450℃以下的溫度來加以進行。 Such as the manufacturing method of the shower head in item 3 of the scope of the patent application, wherein the HIP treatment is carried out at a temperature above 400°C and below 450°C. 如申請專利範圍第1至4項任一項之噴淋頭之製造方法,其中該套筒係以耐蝕性金屬材料來加以構成。 The manufacturing method of the shower head according to any one of items 1 to 4 of the scope of the patent application, wherein the sleeve is made of corrosion-resistant metal material. 如申請專利範圍第5項之噴淋頭之製造方法,其中於該電漿產生空間側之一面形成該火焰噴塗皮膜之工序係以將該基材加熱至150℃以上,250℃以下的溫度狀態下來加以進行。 For example, the method of manufacturing the showerhead in claim 5 of the patent scope, wherein the process of forming the flame sprayed film on the side of the plasma generation space is to heat the base material to a temperature state of above 150°C and below 250°C Come down and proceed. 如申請專利範圍第1至4項任一項之噴淋頭之製造方法,其中該套筒係以陶瓷來加以構成。 The manufacturing method of the shower head according to any one of items 1 to 4 of the scope of the patent application, wherein the sleeve is made of ceramics. 如申請專利範圍第1至7項任一項之噴淋頭之製造方法,其中該電漿產生空間側之一面所形成之該火焰噴塗皮膜係含有氧化釔。 The method of manufacturing a shower head according to any one of claims 1 to 7 of the patent claims, wherein the flame sprayed film formed on the side of the plasma generating space contains yttrium oxide. 如申請專利範圍第1至8項任一項之噴淋頭之製造方法,其進一步具有:於該基材及該套筒的該氣體擴散空間側之一面形成陶瓷製的火焰噴塗皮膜之工序。 The method of manufacturing a shower head according to any one of claims 1 to 8 of the patent claims, further comprising: a step of forming a ceramic flame sprayed film on the substrate and the side of the sleeve on the side of the gas diffusion space. 如申請專利範圍第9項之噴淋頭之製造方法,其進一步具有:於該基材及該套筒的該氣體擴散空間側之一面形成火焰噴塗皮膜之工序前,以該基材及該套筒之該電漿擴散空間側之一面會均面之方式來進行研磨加工或研削加工之工序。 The method for manufacturing a shower head as claimed in claim 9 of the scope of the patent application further includes: before the process of forming a flame sprayed film on the base material and the side of the sleeve on the side of the gas diffusion space, use the base material and the sleeve The process of lapping or lapping is carried out in such a way that the surface of the cylinder on the side of the plasma diffusion space is uniform. 如申請專利範圍第1至10項任一項之噴淋頭之製造方法,其中該本體部係於具有凹部之基材部以覆蓋該凹部之方式結合有板狀氣體噴出部,該板狀氣體噴出部係具備會具有該基材及該氣體噴出孔之複數套筒,該凹部及該氣體噴出部所形成之空間會成為該氣體擴散空間。 The method of manufacturing a shower head according to any one of claims 1 to 10 of the scope of the patent application, wherein the main body part is combined with a plate-shaped gas ejection part in a manner covering the recessed part on the substrate part having a recessed part, and the plate-shaped gas ejection part is The ejection part is provided with a plurality of sleeves having the base material and the gas ejection hole, and the space formed by the concave part and the gas ejection part becomes the gas diffusion space. 一種噴淋頭,係在對基板施予電漿所致之處理的電漿處理裝置中,將用以產生該電漿之處理氣體噴出至配置有該基板,且會產生電漿之腔室內的電漿產生空間之噴淋頭; A shower head, in a plasma processing device for applying plasma processing to a substrate, sprays the processing gas used to generate the plasma into a chamber in which the substrate is disposed and generates plasma Sprinklers in the plasma generating space; 具備:具有複數會噴出該處理氣體的氣體噴出孔之本體部;以及,設於該本體部內,會導入該處理氣體並連通於該氣體噴出孔之氣體擴散空間; Equipped with: a body portion having a plurality of gas ejection holes capable of ejecting the processing gas; and a gas diffusion space provided in the body portion to introduce the processing gas and communicate with the gas ejection holes; 該本體部具有該氣體噴出孔之部分係具有: The part of the body part having the gas ejection hole has: 基材,係由金屬所構成; a substrate consisting of metal; 套筒,係裝設在該基材,且其內部具有該氣體噴出孔;以及 a sleeve mounted on the substrate and having the gas ejection hole inside; and 陶瓷製的火焰噴塗皮膜,係形成在該基材及該套筒之該電漿產生空間側之一面; A flame spray coating made of ceramics is formed on the plasma generating space side of the base material and the sleeve; 該套筒係HIP接合於該基材。 The sleeve is HIP bonded to the substrate. 如申請專利範圍第12項之噴淋頭,其中該基材及該套筒之該腔室側之一面係均面的。 As the shower head of claim 12, wherein the base material and the side of the sleeve on the side of the chamber are uniform. 如申請專利範圍第12或13項之噴淋頭,其中該基材係以鋁材來加以構成。 Such as the shower head of item 12 or 13 of the patent application, wherein the base material is made of aluminum material. 如申請專利範圍第12至14項任一項之噴淋頭,其中該套筒係以耐蝕性金屬材料或陶瓷來加以構成。 For the shower head according to any one of items 12 to 14 of the patent application scope, wherein the sleeve is made of corrosion-resistant metal material or ceramics. 如申請專利範圍第12至15項任一項之噴淋頭,其中該火焰噴塗皮膜係含有氧化釔。 The shower head according to any one of items 12 to 15 of the patent application scope, wherein the flame sprayed film contains yttrium oxide. 如申請專利範圍第12至16項任一項之噴淋頭,其進一步具有形成於該基材及該套筒的該氣體擴散空間側之一面的陶瓷製之其他火焰噴塗皮膜。 The shower head according to any one of the 12th to 16th claims of the patent application, which further has other ceramic flame spray coatings formed on the base material and the side of the sleeve on the side of the gas diffusion space. 如申請專利範圍第17項之噴淋頭,其中該基材及該套筒之該氣體擴散空間側之一面係均面的。 As for the shower head of item 17 of the scope of the patent application, wherein the base material and the side of the sleeve on the side of the gas diffusion space are uniform. 一種電漿處理裝置,係藉由電漿來處理基板之電漿處理裝置,具備有: A plasma processing device is a plasma processing device for processing substrates with plasma, which includes: 腔室,係收納該基板; a chamber for receiving the substrate; 載置台,係在該腔室內載置基板; a mounting table for mounting the substrate in the chamber; 如申請專利範圍第12至18項任一項之噴淋頭,係與該載置台對向般地設置在該腔室內,會將用以產生該電漿之處理氣體供應至該腔室內之電漿產生空間。 If the shower head of any one of items 12 to 18 of the scope of the patent application is installed in the chamber opposite to the mounting table, the processing gas used to generate the plasma will be supplied to the electrode in the chamber. Pulp creates space. 如申請專利範圍第19項之電漿處理裝置,其中該電漿產生機構係構成為具有高頻天線、將高頻電力供應至該高頻天線之高頻電源,藉由將高頻電力供應至該高頻天線,便會於該腔室內之該電漿產生空間產生感應耦合電漿; Such as the plasma processing device of claim 19 in the scope of the patent application, wherein the plasma generating mechanism is constituted as a high-frequency power supply having a high-frequency antenna, and supplies high-frequency power to the high-frequency antenna, by supplying high-frequency power to The high-frequency antenna will generate inductively coupled plasma in the plasma generating space in the chamber; 該噴淋頭係配置為會構成該腔室之頂壁,且會有作為該感應耦合電漿之金屬窗功能,具有透過絕緣構件來被分割為複數個構造,以使得因流經該高頻天線之高頻電流所產生的磁場及渦電流能到達該腔室側。 The shower head is configured to constitute the top wall of the chamber, and has the function of a metal window as the inductively coupled plasma, and is divided into a plurality of structures through an insulating member, so that the high frequency The magnetic field and eddy current generated by the high-frequency current of the antenna can reach the side of the chamber.
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