TW202237870A - Method for manufacturing shower head and shower head and plasma processing apparatus - Google Patents
Method for manufacturing shower head and shower head and plasma processing apparatus Download PDFInfo
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- TW202237870A TW202237870A TW110144555A TW110144555A TW202237870A TW 202237870 A TW202237870 A TW 202237870A TW 110144555 A TW110144555 A TW 110144555A TW 110144555 A TW110144555 A TW 110144555A TW 202237870 A TW202237870 A TW 202237870A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
- B05B1/005—Nozzles or other outlets specially adapted for discharging one or more gases
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B15/00—Details of spraying plant or spraying apparatus not otherwise provided for; Accessories
- B05B15/14—Arrangements for preventing or controlling structural damage to spraying apparatus or its outlets, e.g. for breaking at desired places; Arrangements for handling or replacing damaged parts
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Abstract
Description
本揭示係關於一種噴淋頭之製造方法及噴淋頭、以及電漿處理裝置。 The disclosure relates to a method for manufacturing a shower head, a shower head, and a plasma treatment device.
平板顯示器(FPD)之製造過程會對被處理體之玻璃基板所形成之既定膜施予電漿蝕刻等電漿處理來施予細微加工,以形成電極或配線等。 In the manufacturing process of flat panel display (FPD), plasma etching or other plasma treatment is applied to the predetermined film formed on the glass substrate of the object to be processed, and microfabrication is applied to form electrodes or wiring.
進行此般電漿處理之電漿處理裝置係在腔室內所配置之載置台上配置基板的狀態下,由配置於載置台上方的噴淋頭來將處理氣體噴出至腔室內,以在腔室內產生電漿。 The plasma processing device for performing such plasma processing is to spray the processing gas into the chamber from the shower head arranged above the mounting table in the state where the substrate is arranged on the mounting table arranged in the chamber, so that Generate plasma.
噴淋頭係以鋁等金屬來加以形成,且由於會暴露在處理氣體或電漿下,故被提出有各種抑制針對噴淋頭之腐蝕的技術。 The showerhead is formed of metal such as aluminum, and since it is exposed to process gas or plasma, various techniques for suppressing corrosion on the showerhead have been proposed.
例如,專利文獻1提出有一種技術,係在噴淋頭之基材所設置之氣體噴出口的出口側形成凹部,在其凹部固定圓筒狀之套筒,且以覆蓋基材之電漿產生空間側之表面的方式來形成耐電漿皮膜。
For example,
(專利文獻) 日本特開2017-22356號公報 (Patent Document) Japanese Patent Laid-Open No. 2017-22356
本揭示係提供一種於高溫使用時可抑制套筒周圍發生龜裂之噴淋頭之製造方法及噴淋頭、以及電漿處理裝置。 The present disclosure provides a method for manufacturing a shower head capable of suppressing cracks around a sleeve when used at high temperatures, a shower head, and a plasma treatment device.
本揭示之一實施形態相關之噴淋頭之製造方法,係製造在對基板 施予電漿所致之處理的電漿處理裝置中,將用以產生該電漿之處理氣體噴出至配置有該基板,且會產生電漿之腔室內的電漿產生空間之噴淋頭的噴淋頭之製造方法;該噴淋頭具備:具有複數會噴出該處理氣體的氣體噴出孔之本體部;以及,設於該本體部內,會導入該處理氣體並連通於該氣體噴出孔之氣體擴散空間;該製造方法具有:準備會構成該本體部之該氣體噴出孔的部分,且具有複數個套筒裝設孔的金屬製基材之工序;將其內部具有該氣體噴出孔之套筒裝設在該基材之各該套筒裝設孔之工序;將該基材及該套筒做HIP處理,以將該套筒HIP接合於該基材之工序;以及,於該基材及該套筒的該電漿產生空間側之一面形成陶瓷製的火焰噴塗皮膜之工序。 A method of manufacturing a shower head related to an embodiment of the present disclosure is to manufacture a In a plasma processing device for processing caused by plasma, the processing gas used to generate the plasma is ejected to the shower head of the plasma generation space in the chamber where the substrate is disposed and the plasma is generated A method for manufacturing a shower head; the shower head includes: a body portion having a plurality of gas ejection holes capable of ejecting the processing gas; Diffusion space; the manufacturing method includes: preparing a metal base material that will constitute the gas ejection hole of the main body and having a plurality of sleeve mounting holes; placing the sleeve with the gas ejection hole inside The process of installing each of the sleeve mounting holes in the base material; the process of performing HIP treatment on the base material and the sleeve to HIP bond the sleeve to the base material; and, between the base material and the sleeve A step of forming a ceramic flame spray coating on one surface of the sleeve on the side of the plasma generating space.
依據本揭示,便可提供一種於高溫使用時可抑制套筒周圍發生龜裂之噴淋頭之製造方法及噴淋頭、以及電漿處理裝置。 According to the disclosure, it is possible to provide a method for manufacturing a shower head capable of suppressing cracks around the sleeve when used at high temperature, a shower head, and a plasma treatment device.
1:本體容器 1: Body container
2:噴淋頭 2: sprinkler head
3:天線室 3: Antenna room
4:腔室 4: chamber
5:支撐架 5: support frame
7:絕緣構件 7: Insulation member
13:高頻天線 13: High frequency antenna
18:第1高頻電源 18: The first high-frequency power supply
20:處理氣體供應機構 20: Process gas supply mechanism
50:本體部 50: body part
51:氣體擴散空間 51: Gas diffusion space
52:基材部 52: Substrate Department
53:氣體噴出部 53: Gas ejection part
54:氣體噴出孔 54: Gas ejection hole
61:基材 61: Substrate
62,62’:套筒 62,62': Sleeve
63:第1火焰噴塗皮膜 63: The first flame sprayed film
64:第2火焰噴塗皮膜 64: The second flame spraying film
100:控制部 100: Control Department
G:基板 G: Substrate
圖1係顯示第1實施形態相關之電漿處理裝置的剖視圖。 Fig. 1 is a cross-sectional view showing a plasma processing apparatus according to a first embodiment.
圖2係顯示構成圖1之電漿處理裝置的噴淋頭之本體部的氣體噴出口一部分之圖式。 FIG. 2 is a diagram showing a part of the gas ejection port of the main body of the shower head constituting the plasma processing apparatus of FIG. 1 .
圖3係用以說明噴淋頭之製造方法的工序剖視圖。 Fig. 3 is a sectional view illustrating the process of the shower head manufacturing method.
圖4係顯示在套筒與基材之間產生間隙時所產生的龜裂之圖式。 Fig. 4 is a diagram showing cracks generated when a gap is created between the sleeve and the substrate.
圖5係顯示在基材及套筒之氣體擴散空間側的一面及腔室側的一面之境界部分具有段差情況的圖式。 Fig. 5 is a diagram showing a case where there is a level difference at the boundary between the gas diffusion space side and the chamber side of the substrate and the sleeve.
圖6係顯示構成第2實施形態之電漿處理裝置的噴淋頭之本體部的氣體噴出部一部分之圖式。 Fig. 6 is a diagram showing a part of the gas ejection part of the main body part of the shower head constituting the plasma processing apparatus according to the second embodiment.
圖7係顯示關於圖2結構之噴淋頭的氣體噴出部,就以以往方式所接合之套筒與以HIP接合者進行耐熱性試驗的結果之圖式。 Fig. 7 is a diagram showing the results of a heat resistance test of a conventionally bonded sleeve and a HIP bonded sleeve for the gas ejection portion of the showerhead having the structure shown in Fig. 2 .
圖8係顯示關於圖6結構之噴淋頭的氣體噴出部,就以以往方式所接合之套筒與以HIP接合者進行耐熱性試驗的結果之圖式。 FIG. 8 is a graph showing the results of heat resistance tests on the conventionally bonded sleeve and the HIP bonded sleeve for the gas ejection portion of the showerhead having the structure shown in FIG. 6 .
以下便參照添附圖式,就實施形態來加以說明。 Hereinafter, the embodiments will be described with reference to the attached drawings.
<第1實施形態> <First Embodiment>
首先,就第1實施形態來加以說明。 First, the first embodiment will be described.
圖1係顯示第1實施形態相關之電漿處理裝置的剖視圖。 Fig. 1 is a cross-sectional view showing a plasma processing apparatus according to a first embodiment.
圖1所示之電漿處理裝置係構成為作為感應耦合電漿處理裝置,可適用於在矩形基板,例如FPD用玻璃基板上形成薄膜電晶體時之金屬膜的蝕刻。 The plasma processing apparatus shown in FIG. 1 is configured as an inductively coupled plasma processing apparatus, and is suitable for etching a metal film when forming a thin film transistor on a rectangular substrate, such as a glass substrate for FPD.
此種感應耦合電漿處理裝置係具有導電性材料,例如內壁面被陽及氧化處理後的鋁所構成之方筒狀氣密的本體容器1。此本體容器1係可分解地加以組裝,並藉由接地線1a來接地。
This kind of inductively coupled plasma processing device has a square tube-shaped
本體容器1係藉由與本體容器1絕緣所形成之矩形的噴淋頭2而被上下地區隔,上側會成為區劃出天線室之天線容器3,下側則會區劃出具有電漿產生空間S之處理室的腔室4。噴淋頭2係具有作為金屬窗之功能,且會構成腔室4的頂壁。成為金屬窗之噴淋頭2主要是以非磁性體之導電性金屬,例如鋁(Al)材(Al或Al合金)來加以構成。
The
天線容器3的側壁3a與腔室4的側壁4a之間係設有會突出於本體容器1之內側,且會支撐噴淋頭2之支撐架5。支撐架5是以導電性材料,最好是鋁等金屬來加以構成。噴淋頭2係構成為透過絕緣構件7來被分割為複數個。然後,
被分割為複數個之噴淋頭2的分割部分係藉由複數根吊件(suspender,未圖式)而成為吊掛在本體容器1之頂部的狀態。
Between the
噴淋頭2之各分割部分係具有本體部50,以及設置於本體部50內部之氣體擴散空間(Buffer)51。本體部50係具有基材部52,以及具有將處理氣體從氣體擴散空間51朝腔室4內之電漿產生空間S噴出的複數氣體噴出孔54之氣體噴出部53。氣體擴散空間51係透過氣體供應管51而從處理氣體供應機構20導入有處理氣體。氣體擴散空間51係連通至複數氣體噴出孔54,並會透過複數氣體噴出孔54來使處理氣體從氣體擴散空間51噴出。另外,基材部52與氣體噴出部53可為一體構成,也可為另體構成。在另體構成的情況,氣體噴出部53係構成為噴淋板。
Each divided part of the
噴淋頭2上之天線容器3內係以面向於噴淋頭2之電漿產生空間S側之相反側一面之方式而設有高頻天線13。高頻天線13係由導電性材料,例如銅等所構成,並藉由絕緣構件所構成之間隔件(未圖示)來從噴淋頭2分離配置,且會在對應於矩形噴淋頭2之面內形成為例如渦卷狀。又,亦可形成為環狀,而構成高頻天線13之天線可為一根,亦可為複數根。
The
高頻天線13係透過供電線16、匹配器17而連接至第1高頻電源18。然後,電漿處理期間,係透過從第1高頻電源18所延伸之供電線16來將例如13.56MHz的高頻電力供應至高頻天線13。藉此,透過如後述般作為金屬窗功能之噴淋頭2所激發之迴路(loop)電流,便會在腔室4內形成感應電場。然後,藉由此感應電場,在腔室4內之噴淋頭2正下方的電漿產生空間S中便會使從噴淋頭2所供應之處理氣體電漿化,並產生感應耦合電漿。亦即,高頻天線13及第1高頻電源18係作為電漿產生機構來發揮功能。
The high-
腔室4內的底部係以夾置著噴淋頭2而與高頻天線13對向之方式,透過絕緣體構件24而固定有用以載置作為被處理基板之矩形FPD用玻璃基板(以下僅稱為基板)G的載置台23。載置台23係以導電性材料,例如表面被陽極氧化處理後之鋁來加以構成。載置台23所載置之基板G係藉由靜電吸盤(未圖式)來加以吸附保持。
The bottom of the
載置台23之上部周緣部係設有絕緣性的遮蔽環25a,載置台23之周面係設有絕緣環25b。載置台23係透過本體容器1之底壁、絕緣體構件24而插設有用以搬出入基板G之升降銷26。升降銷26係藉由本體容器1外所設置之升降機構(未圖式)來升降驅動以進行基板G的搬出入。
An insulating
本體容器1外係設有匹配器28及第2高頻電源29,載置台23係藉由供電線28a而透過匹配器28連接有第2高頻電源29。此第2高頻電源29在電漿處理中會將偏壓用之高頻電力,例如頻率為3.2MHz之高頻電力施加至載置台23。藉由以此偏壓用高頻電力所產生之自偏壓,能有效地使腔室4內所產生之電漿中的離子被吸引至基板G。
A
再者,載置台23內為了控制基板G的溫度,係設有由加熱器等加熱機構或冷媒流道等所構成之溫度控制機構及溫度感應器(均未圖示)。針對該等機構或構件之配管或配線均是透過本體容器1底面及絕緣體構件24所設置之開口部1b來被導出至本體容器1外。
Moreover, in order to control the temperature of the substrate G in the mounting table 23, a temperature control mechanism and a temperature sensor (both not shown) constituted by a heating mechanism such as a heater or a refrigerant flow path, etc. are provided. The piping or wires for these mechanisms or components are led out of the
腔室4的側壁4a係設有用以將基板G搬出入之搬出入口27a及將其加以開閉之閘閥27。又,腔室4底部係透過排氣管31而連接有含真空泵等之排氣裝置30。藉由此排氣裝置30,會使腔室4內被排氣,而在電漿處理中使得腔室4內被設定、維持在既定的真空氛圍(例如1.33Pa)。
The
載置台23所載置之基板G內面側係形成有細微空間(未圖示),並設有用以供應作為一定壓力之熱傳遞用氣體的He氣體之He氣體流道41。如此般地藉由供應熱傳遞用氣體至基板G的內面側,便可抑制在真空下基板G因電漿處理所致之溫度上升或溫度變化。
A fine space (not shown) is formed on the inner side of the substrate G placed on the mounting table 23, and a
此種感應耦合電漿處理裝置進一步具有控制部100。控制部100係由電腦所構成,具有由控制電漿處理裝置之各構成部的CPU所構成之主控制部、輸入裝置、輸出裝置、顯示裝置及記憶裝置。記憶裝置係記憶有以電漿處理裝置所實行之各種處理的參數,又,設置有儲存了用以控制電漿處理裝置所實行之處理的程式,亦即處理配方之記憶媒體。主控制部會控制為能將記憶媒體所記憶之既定的處理配方叫出,並基於該處理配方來使電漿處理裝置實行既定的處理。
Such an inductively coupled plasma processing apparatus further includes a
接著,就噴淋頭2做更詳細的說明。
Next, the
感應耦合電漿係藉由使高頻電流流經高頻天線而在其周圍感生磁場,利用藉由該磁場所激發之感應電場來產生高頻放電,並藉此所產生之電漿。在使用1片金屬窗作為腔室4之頂壁的情況,於面內繞周向所設置之高頻天線13因為渦電流及磁場無法到達金屬窗的內面側,即電漿產生空間S側,故不會產生電漿。因此,本實施形態係以絕緣構件7將作為金屬窗功能之噴淋頭2分割成複數個構造,以使因流經高頻天線13之高頻電流所產生之磁場及渦電流會到達電漿產生空間S。
Inductively coupled plasma is to induce a magnetic field around the high-frequency antenna by making high-frequency current flow through it, and use the induced electric field excited by the magnetic field to generate a high-frequency discharge, thereby generating plasma. In the case of using a metal window as the top wall of the
噴淋頭2如上述般,係透過氣體供應配管21而從處理氣體供應機構20來被導入有處理氣體。然後,被導入之處理氣體會通過氣體擴散空間51及複數氣體噴出孔54而噴出至腔室4內之電漿產生空間。噴淋頭2會因其自身的溫度調整及來自電漿的入熱而有變成為高溫的情況。本實施形態之噴淋頭2在高溫
下會具有耐熱性。具體而言,即便在200℃之高溫時亦具有充分耐熱性。
The
圖2係顯示構成圖1之電漿處理裝置的噴淋頭之本體部的氣體噴出口一部分之圖式。 FIG. 2 is a diagram showing a part of the gas ejection port of the main body of the shower head constituting the plasma processing apparatus of FIG. 1 .
含氣體噴出部53之本體部50係具有基材61、複數個套筒26、第1火焰噴塗皮膜63及第2火焰噴塗皮膜64。
The
基材61為非磁性金屬製,較佳係以Al材料(Al或Al合金)來加以形成。Al材料可舉出有例如JIS之6000系列。基材61為Al材料的情況,會依需要於側面設有陽極氧化皮膜61a。
The
複數個套筒62係以不鏽鋼、哈氏合金(Hastelloy)般的鎳基合金等之耐蝕性金屬來加以構成,並成為具段差的圓筒狀,而能被嵌入至基材61所形成之對應的凹部(套筒裝設孔)。各套筒62內部係形成有從氣體擴散空間51朝電漿產生空間S貫通之氣體噴出孔54。
The plurality of
氣體噴出孔54係具有氣體擴散空間51側之大徑部54a,及電漿產生空間S側之小徑部54b。然後,小徑部54b之下端會成為面臨電漿產生空間S之開口部54c。使電漿產生空間S為小徑部54b是因為要防止電漿進入至氣體噴出孔54深處之故。小徑部54b的內徑係設定在例如0.5~1mm。
The
套筒62係藉由熱等靜壓燒結(HIP)來被接合(HIP接合)於基材61,會與基材61之間以施予壓縮應力之狀態來無間隙地密接於基材61。
The
又,基材61與套筒62的氣體擴散空間51側之一面以及電漿產生空間S側之一面如圖所示般,較佳均是成為均面。
In addition, the
第1火焰噴塗皮膜63係將對處理氣體具有耐蝕性之材料火焰噴塗而形成在基材61之氣體擴散空間51側的一面。第1火焰噴塗皮膜63較佳係含浸有
含浸材。
The first flame sprayed
第1火焰噴塗皮膜63係在使用針對基材61有高腐蝕性氣體來作為處理氣體的情況而會保護基材61者。第1火焰噴塗皮膜63係以陶瓷來加以構成。構成第1火焰噴塗皮膜63之陶瓷較佳為氧化鋁(Al2O3)或氧化鋯(ZrO2)。Al2O3火焰噴塗皮膜在使用Cl2氣體來蝕刻處理Al時,於噴淋頭2上升至200℃左右的情況是有效的。第1火焰噴塗皮膜63的厚度較佳為80~200μm之範圍。另外,在處理氣體腐蝕基材61之虞較小的情況,亦可不設置第1火焰噴塗皮膜63。
The first flame sprayed
第2火焰噴塗皮膜64係將對處理氣體之電漿具有耐電漿性之材料火焰噴塗而形成在基材61之電漿產生空間S側的一面。第2火焰噴塗皮膜64較佳係含浸有含浸材。
The second
第2火焰噴塗皮膜64係用以由電漿來保護基材61者。第2火焰噴塗皮膜64亦是以陶瓷來加以構成。第2火焰噴塗皮膜64較佳係耐電漿性高之氧化釔(Y2O3)火焰噴塗皮膜或Y-Al-Si-O系混合火焰噴塗皮膜(釔、鋁及氧化矽(或氮化矽)之火焰噴塗皮膜)等之含氧化釔者。依使用之處理氣體,亦可為Al2O3火焰噴塗皮膜。又,藉由於第2火焰噴塗皮膜64含浸有含浸材,便能使火焰噴塗皮膜所存在之氣孔封閉,可更加提高耐電漿性,並提高耐銷孔腐蝕。
The second
第2火焰噴塗皮膜64較佳為表面有耐電漿性高之準緻密火焰噴塗皮膜。所謂準緻密火焰噴塗皮膜係指氣孔率較通常的火焰噴塗皮膜要低之火焰噴塗皮膜,相對於通常之皮膜的氣孔率為3%~5%,則是2~3%。藉由以準緻密火焰噴塗,便能更加提高耐電漿性。又,藉由將火焰噴塗皮膜之準緻密化及含浸材加以組合,便能更加一層提高耐電漿性。第2火焰噴塗皮膜64之厚度較佳為150~500μm的範圍。
The second flame sprayed
在噴淋頭2之溫度上升至200℃以上之高溫的情況,被含浸於第1火焰噴塗皮膜63及第2火焰噴塗皮膜64之含浸材較佳係使用耐熱性高者。又,作為含浸材較佳是可浸透至準緻密皮膜的較佳充填性之樹脂含浸材。由於此般論點,較佳是耐熱性及耐蝕性優異之高充填性耐熱環氧樹脂。
When the temperature of the
接著,就使用此般構成之感應耦合電漿處理裝置以對基板G施以電漿處理,例如電漿蝕刻處理時之處理動作來加以說明。 Next, the processing operation when plasma processing, such as plasma etching processing, is performed on the substrate G using the inductively coupled plasma processing apparatus configured in this way will be described.
首先,在打開閘閥27的狀態下藉由搬送機構(未圖示)來將形成有既定膜之基板G從搬出入口27a搬入至腔室4內,並載置於載置台23之載置面。接著,藉由靜電吸盤(未圖示)將基板G固定在載置台23上。然後,藉由排氣裝置30將腔室4內真空排氣,並藉由壓力控制閥(未圖示)來將腔室4內維持在例如0.66~26.6Pa左右之壓力氛圍。在此狀態下,透過氣體供應管21將處理氣體從處理氣體供應機構20朝具有金屬窗功能之噴淋頭2供應,再從噴淋頭2將處理氣體噴淋狀地噴出至腔室4內。基板G內面側之空間係透過He氣體流道41而供應He氣體來作為熱傳遞用氣體。
First, with the
此時,會將本體容器1、基材部52溫度調整至高溫,且產生電漿後,噴淋頭2之溫度便會成為200℃之高溫。
At this time, the temperature of the
接著,從高頻電源18將例如13.56MHz之高頻施加至高頻天線13,藉此而透過作為金屬窗功能之噴淋頭2來在腔室4內產生均勻的感應電場。藉由如此所產生之感應電場,處理氣體便會在腔室4內之電漿產生空間S電漿化,而產生高密度的感應耦合電漿。藉由此電漿來對基板G進行電漿蝕刻處理。
Next, a high frequency such as 13.56 MHz is applied to the
接著,就上述噴淋頭2之製造方法來加以說明。
Next, a method of manufacturing the above-mentioned
圖3係用以說明噴淋頭之製造方法的工序剖視圖。製造噴淋頭2之際,首先如
圖3(a)所示,會準備形成有套筒裝設孔61b之基材61(step 1)。然後,將套筒62裝設在基材61之套筒裝設孔61b(step 2;圖3(b))。接著,將基材61及裝設後的套筒62做HIP處理,來將套筒62HIP接合在基材61(step 3;圖3(c))。之後,將基材61與套筒62的氣體擴散空間51側之一面及電漿產生空間S側之一面均進行研磨加工或研削加工以成為均面(step 4;圖3(d))。之後,在基材61與套筒62的氣體擴散空間側之一面及電漿產生空間S側之一面分別形成第1火焰噴塗皮膜63及第2火焰噴塗皮膜64(step 5;圖3(e))。在進行陽極氧化處理所致的陽極氧化皮膜61a之形成的情況,較佳是在HIP接合套筒62後再進行。
Fig. 3 is a sectional view illustrating the process of the shower head manufacturing method. When manufacturing the
HIP處理係針對處理對象同時施加以Ar氣體等非活性氣體作為壓力媒體之等向性壓力及高溫的處理。本實施形態中,基材61為Al材料的情況,HIP處理較佳係在壓力為50~200MPa,溫度為300~550℃來加以進行。基材61為6000系列等之鋁製的情況,在300℃左右會開始軟化,而固熔溫度為430~530℃,故可在300~550℃下適當地進行HIP處理。更佳為400~450℃。又,關於壓力,在100~150MPa下可得到良好的HIP效果。
HIP treatment is a treatment that simultaneously applies isotropic pressure and high temperature using an inert gas such as Ar gas as a pressure medium to the treatment object. In this embodiment, when the
藉此,套筒62便會相對基材61而為HIP接合後狀態。亦即,藉由進行HIP處理,套筒62及基材61之間會成為被施予壓縮應力之狀態,使得套筒62無間隙地相對於基材61而密接。
Thereby, the
HIP處理係在高溫(例如300℃以上)下進行,故即便噴淋頭2之使用溫度成為200℃以上,套筒62及基材61之間的壓縮應力仍會殘留,兩者仍會維持無間隙地密接之狀態。因此,可維持高耐熱性。本實施形態中,由於套筒62為金屬製,故耐熱衝擊性高,只要殘留有HIP效果便可獲得至300℃左右的高耐熱性。
HIP treatment is carried out at high temperature (for example, above 300°C), so even if the operating temperature of the
如專利文獻1之技術般在以嵌合將套筒接著於基材的情況,當噴淋頭2之溫度成為200℃時,套筒與基材之間便會容易產生間隙。如圖4所示,當套筒62與基材61之間產生間隙66時,第1及第2火焰噴塗皮膜63,64的套筒62與基材61之境界部所對應之部分便會變得容易產生龜裂67。又,套筒62與基材61之境界部的基材61側會發生腐蝕。
In the case of bonding the sleeve to the substrate by fitting like the technique of
相對於此,本實施形態係使套筒62HIP接合於基材61,即便在200℃的高溫使用時,套筒62與基材61之間仍無間係地加以密接,故會抑制第1火焰噴塗皮膜63及第2火焰噴塗皮膜64發生龜裂,而難以產生腐蝕的問題。
On the other hand, in this embodiment, the
又,如圖5所示,在基材61與套筒62的氣體擴散空間51側之一面及電漿產生空間S側之一面的境界部分具有段差的情況,對應於第1火焰噴塗皮膜63及第2火焰噴塗皮膜64之段差部分的膜質會與其他部分不同,而有容易產生龜裂之虞。因此,基材61與套筒62的氣體擴散空間51側之一面,以及電漿產生空間S側之一面較佳係進行研磨加工以使其成為均面。藉此,第1火焰噴塗皮膜63及第2火焰噴塗皮膜64之基材61與套筒62的境界部分不會產生段差,可提高抑制龜裂發生的效果。
Also, as shown in FIG. 5 , when there is a level difference between the
然而,在僅以將套筒62HIP接合便可充分抑制火焰噴塗皮膜之龜裂的情況或段差較小的情況,便不一定需要此般的研磨加工。
However, when cracking of the flame spray coating can be sufficiently suppressed only by HIP joining the
第1火焰噴塗皮膜63及第2火焰噴塗皮膜64係藉由將上述般材料的粒子熔融或者接近其之狀態而噴附到基材61與套筒62的氣體擴散空間51側之一面及電漿產生空間S側之一面來加以形成。如上述般,第1火焰噴塗皮膜63並非一定需要。
The first flame sprayed
形成第1火焰噴塗皮膜63及第2火焰噴塗皮膜64之時,在使用溫度
為200℃的情況,藉由將基材加熱至其接近的150~250℃來進行火焰噴塗,便可使對第1火焰噴塗皮膜63及第2火焰噴塗皮膜64之龜裂更加難以產生。
When forming the first flame sprayed
套筒62與基材61之間由於必須藉由HIP處理來加以密接,故在形成陽極氧化皮膜61a的情況,HIP處理會在不存在有陽極氧化皮膜61a的狀態下進行,而陽極氧化皮膜61a的形成則是在HIP處理後才加以進行。又,第1及第2火焰噴塗皮膜63,64因必須直接形成於基材61,故在陽極氧化時,該等的面最好是被加以遮蔽。再者,在未形成第1火焰噴塗皮膜63的情況,基材61的氣體擴散空間51側之一面便會是形成有陽極氧化皮膜61a後的狀態。
Since the
<第2實施形態> <Second Embodiment>
接著,就第2實施形態來加以說明。 Next, a second embodiment will be described.
本實施形態中,電漿處理裝置的基本結構雖與第1實施形態相同,但僅有噴淋頭之氣體噴出部的結構與第1實施形態不同。 In this embodiment, the basic structure of the plasma processing apparatus is the same as that of the first embodiment, but only the structure of the gas ejection portion of the shower head is different from the first embodiment.
圖6係顯示構成第2實施形態之電漿處理裝置的噴淋頭之本體部的氣體噴出部一部分之圖式。 Fig. 6 is a diagram showing a part of the gas ejection part of the main body part of the shower head constituting the plasma processing apparatus according to the second embodiment.
氣體噴出部53’係具有基材61、複數個套筒62’、第1火焰噴塗皮膜63及第2火焰噴塗皮膜64。基材61、第1火焰噴塗皮膜63及第2火焰噴塗皮膜64係構成為與第1實施形態相同。與第1實施形態同樣地,在處理氣體對基材61腐蝕之虞較小的情況,亦可不設置第1火焰噴塗皮膜63。
The gas ejection part 53' has a
套筒62’係以Al2O3般的陶瓷來加以形成,會成為圓筒狀而被嵌入至基材61所形成之對應凹部(套筒裝設孔)。各套筒62’內部係形成有從氣體擴散空間51朝電漿產生空間S貫通之氣體噴出孔54’。由於陶瓷難以加工,故套筒62’
會與第1實施形態的套筒62不同,基本形狀會是直線狀,氣體噴出孔54’亦是直線狀。氣體噴出孔54’的內徑係設定在例如0.5~1mm。套筒62’的外周部中央係形成有軌道般的溝部62’a。
The
套筒62’係藉由HIP處理來接合(HIP接合)於基材61,並以與基材61之間施予壓縮應力的狀態來無間隙地密接於基材61。Al基材之HIP的接合溫度由於幾乎不會產生材料的相互擴散,故直線狀的套筒有被拔移之虞。相對於此,套筒62’雖是直線狀,但由於外周部形成有溝部62’a,故HIP接合時,基材61會流入至溝部62'a內而使基材61密接於套筒62',能防止套筒62’的拔移。
The sleeve 62' is bonded to the
本實施形態較佳地亦是使基材61與套筒62’的氣體擴散空間51側之一面及電漿產生空間S側之一面均成為均面。
In this embodiment, it is also preferable to make the
在噴淋頭之製造方法時,可以和第1實施形態相同的step 1~step 5來加以進行。本實施形態亦與第1實施形態同樣地,藉由進行HIP處理,能使套筒62’與基材61之間成為被施予壓縮應力之狀態,讓套筒62'相對於基材61而無間隙地加以密接。然後,噴淋頭2即便成為200℃的高溫,仍會存在有套筒62’與基材61之間的壓縮應力,能維持兩者無間隙的密接狀態,而維持著至200℃左右的耐熱性。然而,構成套筒62’之陶瓷的熱膨脹係數會較構成構成基材61之Al般的金屬要小,故會因與基材61的熱膨脹差,而有耐熱性較第1實施形態之金屬製套筒62要低的傾向。
In the method of manufacturing the shower head, steps 1 to 5 that are the same as those in the first embodiment can be performed. In this embodiment, as in the first embodiment, by performing the HIP treatment, a compressive stress can be applied between the sleeve 62' and the
本實施形態中,step 4的研磨加工亦非必須,在僅將套筒62'HIP接合便可充分抑制火焰噴塗皮膜之龜裂的情況或段差較小的情況,亦可不進行此般研磨加工。
In this embodiment, the grinding process of
又,本實施形態中,在形成陽極氧化皮膜61a的情況,亦是在HIP
處理後來加以進行,火焰噴塗皮膜63,64的面最好是被加以遮蔽。再者,在不形成第1火焰噴塗皮膜63的情況,基材61的氣體擴散空間51側之一面則是形成有陽極氧化皮膜61a後之狀態。
Moreover, in this embodiment, when forming the
<實驗例> <Experiment example>
此處,針對圖2之構造及圖6之構造的噴淋頭之氣體噴出部,就以以往般接著套筒者與HIP接合者來進行耐熱性試驗。基材係使用Al(A6061),圖2之構造中係使用不鏽鋼(SUS316L)來作為金屬製套筒,圖6之構造中係使用Al2O3來作為陶瓷套筒。又,任一構造中,均是使用Al2O3火焰噴塗皮膜來作為氣體擴散空間側之第1火焰噴塗皮膜,使用含有Y2O3之混合火焰噴塗皮膜(SP火焰噴塗皮膜)來作為電漿產生空間S側之第2火焰噴塗皮膜。 Here, for the gas ejection part of the shower head with the structure shown in FIG. 2 and the structure shown in FIG. 6, the heat resistance test was carried out by conventionally connecting the sleeve and HIP joint. Al (A6061) is used as the base material, stainless steel (SUS316L) is used as the metal sleeve in the structure shown in Figure 2, and Al 2 O 3 is used as the ceramic sleeve in the structure shown in Figure 6. Also, in either structure, an Al 2 O 3 flame sprayed coating is used as the first flame sprayed coating on the side of the gas diffusion space, and a mixed flame sprayed coating (SP flame sprayed coating) containing Y 2 O 3 is used as the electrode. The second flame spray coating on the S side of the slurry generation space.
就該等噴淋頭改變溫度來進行耐熱性試驗。耐熱性試驗係使用高溫乾燥爐來對噴淋頭實施各溫度下之熱循環試驗。使用不鏽鋼製套筒的噴淋頭之結果顯示於圖7,使用陶瓷製套筒的噴淋頭之結果顯示於圖8。 The temperature resistance test was carried out on the sprinklers with varying temperatures. The heat resistance test uses a high-temperature drying oven to perform heat cycle tests at various temperatures on the sprinkler head. The results for the shower head using the stainless steel sleeve are shown in FIG. 7 and the results for the shower head using the ceramic sleeve are shown in FIG. 8 .
如圖7所示,使用不鏽鋼製套筒之圖2的構造中,與在接著套筒後的情況會於200℃有龜裂進入到火焰噴塗皮膜相比,在HIP接合套筒後的情況則至300℃仍未見到火焰噴塗皮膜的龜裂。 As shown in Fig. 7, in the structure of Fig. 2 using a stainless steel sleeve, compared with the case where a crack enters the flame sprayed film at 200°C after the sleeve is bonded, the case of the HIP jointed sleeve is less No cracking of the flame sprayed film was observed even at 300°C.
又,如圖8所示,使用陶瓷製套筒之圖6的構造中,與在接著套筒後的情況會於180℃有龜裂進入到火焰噴塗皮膜相比,在HIP接合套筒後的情況則至200℃仍未見到火焰噴塗皮膜的龜裂。 Also, as shown in FIG. 8, in the structure of FIG. 6 using a ceramic sleeve, compared to the case where cracks enter the flame spray coating at 180°C after bonding the sleeve, the HIP bonding sleeve In the case, no cracking of the flame sprayed coating was observed up to 200°C.
由以上可確認,在任一套筒中,藉由HIP接合套筒均較接著套筒的情況會更加提升耐熱性。 From the above, it was confirmed that in any sleeve, joining the sleeve by HIP improves the heat resistance more than the case of joining the sleeve.
<其他適用> <other applicable>
以上,雖已就實施形態加以說明,但本次揭示的實施形態的所有要點應被認為是例示而非限制者。上述實施形態在未脫離添附之申請專利範圍及其主旨下,亦可以各種形態做省略、置換、變更。 As mentioned above, although embodiment was demonstrated, all the points of the embodiment disclosed this time should be considered as an illustration and not a limiter. The above-mentioned embodiments can also be omitted, replaced, and changed in various forms without departing from the scope of the appended patent application and its gist.
例如,上述實施形態中,雖係顯示使用感應耦合電漿處理裝置來作為進行電漿蝕刻之電漿處理裝置的範例,但不限於此,只要氣體噴出部之基材是金屬噴淋頭的話,亦可為電容耦合電漿處理裝置等其他的電漿處理裝置。在電容耦合電漿處理裝置等的情況,便無需分割噴淋頭。 For example, in the above-mentioned embodiment, although the example of using the inductively coupled plasma processing device as the plasma processing device for plasma etching is shown, it is not limited to this, as long as the base material of the gas ejection part is a metal shower head, Other plasma processing devices such as capacitively coupled plasma processing devices may also be used. In the case of a capacitively coupled plasma processing device or the like, there is no need to divide the shower head.
又,上述實施形態中,雖以電漿蝕刻裝置為例來加以說明,但不限於此,若是使用電漿灰化或電漿CVD等腐蝕性高之氣體的電漿之電漿處理裝置均可適用。 In addition, in the above-mentioned embodiment, although the plasma etching device is used as an example to illustrate, it is not limited to this, and any plasma processing device using a plasma with a highly corrosive gas such as plasma ashing or plasma CVD can be used. Be applicable.
61:基材 61: Substrate
61b:套筒裝設孔 61b: Sleeve installation hole
62:套筒 62: Sleeve
63:第1火焰噴塗皮膜 63: The first flame sprayed film
64:第2火焰噴塗皮膜 64: The second flame spraying film
Claims (20)
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JP2020204461A JP2022091561A (en) | 2020-12-09 | 2020-12-09 | Method for manufacturing shower head and shower head, and plasma processing device |
JP2020-204461 | 2020-12-09 |
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TW202237870A true TW202237870A (en) | 2022-10-01 |
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JP6670625B2 (en) | 2015-07-10 | 2020-03-25 | 東京エレクトロン株式会社 | Plasma processing apparatus and shower head |
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- 2020-12-09 JP JP2020204461A patent/JP2022091561A/en active Pending
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