TW202231373A - Mask cleaning method, cleaning liquid, cleaning apparatus, and method for manufacturing organic device - Google Patents

Abstract

The invention relates to a method for cleaning a mask, a cleaning solution, a cleaning apparatus, and a method for manufacturing an organic device. A cleaning method for cleaning a mask includes a cleaning step of cleaning the mask by bringing a cleaning liquid into contact with the mask. The cleaning solution contains potassium iodide and iodine. The temperature of the cleaning liquid is less than 25 DEG C.

Description

Mask cleaning method, cleaning solution, cleaning device, and manufacturing method of organic device

Embodiments of the present invention relate to a method for cleaning a mask, a cleaning solution, a cleaning device, and a method for manufacturing an organic device.

In recent years, for electronic devices such as smart phones and tablet PCs (Personal Computers), the market requires high-definition display devices. The display device has, for example, a device density of 400 ppi or more or 800 ppi or more.

Organic EL (Electroluminescence, electroluminescence) display devices have attracted much attention because of their good responsiveness and/or high contrast ratio. As a method of forming an element of an organic EL display device, a method of attaching a material constituting the element to a substrate by vapor deposition is known. For example, first, a substrate on which anodes are formed in a pattern corresponding to the element is prepared. Then, the organic material is attached to the anode through the through hole of the mask, and an organic layer is formed on the anode. Then, a cathode is formed on the organic layer. The organic material adhering to the mask is removed by a cleaning device. The mask is reused after washing. [Prior Art Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2006-100263

[Problems to be Solved by Invention]

As a method of forming electrodes such as a cathode, a method of attaching a conductive material to an organic layer through a through hole of a mask is considered. In order to reuse the mask, it is required to establish a method for cleaning the mask to which the conductive material is attached. [Technical means to solve problems]

The cleaning method for cleaning a mask according to an embodiment of the present invention includes a cleaning step, In the cleaning step, the mask is cleaned by contacting the cleaning solution with the mask, The above cleaning solution contains potassium iodide and iodine, The temperature of the above cleaning solution did not reach 25°C. [Effect of invention]

According to an embodiment of the present invention, the mask to which the conductive material is attached can be cleaned.

In this specification and the drawings, unless otherwise specified, the terms "substrate", "substrate", "plate", "sheet", "film", etc. mean the substance that is the basis of a certain structure and are not limited to Distinguish each other based on the difference in name.

In this specification and the drawings, unless otherwise specified, terms such as "parallel" or "orthogonal", lengths, angles, etc., which specify shapes or geometric conditions and their degrees, are not limited. In the strict sense, but to include the extent to which the same function can be expected to be interpreted.

In this specification and this drawing, unless otherwise specified, a certain structure in a certain member or a certain area is placed on the "upper", "lower", "upper side", "lower" of other structures such as other members or other regions. In the case of "side", "above", or "below", it includes the situation in which a certain component is directly connected to other components. Furthermore, it also includes the case where a certain structure and other structures contain different structures, that is, the case where they are indirectly connected. Furthermore, unless otherwise specified, the up-down direction may be reversed with respect to words such as "up", "upper side", "upper side", or "lower", "lower side", and "lower side".

In this specification and this drawing, unless otherwise specified, the same part or part having the same function may be given the same symbol or a similar symbol, and the repeated description thereof may be omitted. Moreover, for convenience of description, the dimension ratio of a drawing may be made different from an actual ratio, or a part of a structure may be abbreviate|omitted from drawing.

In this specification and this drawing, unless otherwise specified, it is possible to combine with other embodiments or modified examples within the range that does not cause contradiction. In addition, other embodiments, or other embodiments and modified examples may be combined within a range that does not contradict each other. In addition, the modification examples may be combined within a range where no contradiction occurs.

In this specification and this drawing, unless otherwise specified, when a plurality of steps are disclosed with respect to methods such as a manufacturing method, other steps not disclosed may be implemented between the disclosed steps. In addition, the order of the disclosed steps is arbitrary as long as there is no conflict.

In this specification and this drawing, unless otherwise specified, the numerical range represented by the symbol "-" includes the numerical values before and after the symbol "-". For example, the numerical range defined by the expression "34 to 38 mass %" is the same as the numerical range defined by the expression "34 mass % or more and 38 mass % or less".

In one embodiment of this specification, an example in which a mask is used to form electrodes on a substrate when an organic EL display device is manufactured will be described. However, the application of the mask is not particularly limited, and the present embodiment can be applied to masks used in various applications. For example, in order to form electrodes for a device for displaying or projecting images or images intended to present virtual reality, so-called VR (Virtual reality) or augmented reality, so-called AR (Augmented reality), the present invention can also be used. Implementation of the mask. Moreover, in order to form electrodes of display devices other than organic EL display devices, such as an electrode of a liquid crystal display device, the mask of this embodiment can also be used. In addition, the mask of this embodiment can also be used to form electrodes of organic devices other than display devices, such as electrodes of pressure sensors.

A first aspect of the present invention is a cleaning method comprising cleaning a mask, and including a cleaning step of cleaning the mask by contacting the cleaning solution with the mask, The above cleaning solution contains potassium iodide and iodine, The temperature of the above cleaning solution did not reach 25°C.

A second aspect of the present invention is the cleaning method of the above-mentioned first aspect, wherein The said washing|cleaning process may comprise the immersion process which immerses the said mask in the said washing|cleaning liquid accommodated in a washing tank.

A third aspect of the present invention is the cleaning method of the above-mentioned second aspect, wherein The above-mentioned cleaning step may include an ultrasonic wave step of applying ultrasonic waves to the above-mentioned cleaning solution.

A fourth aspect of the present invention is the cleaning method of the above-mentioned third aspect, wherein The frequency of the above-mentioned ultrasonic waves may also be above 100 kHz.

A fifth aspect of the present invention is the cleaning method of the above-mentioned fourth aspect, wherein The frequency of the above-mentioned ultrasonic waves may also be below 1 MHz.

A sixth aspect of the present invention is the cleaning method of each of the above-mentioned first aspect to the above-mentioned fifth aspect, wherein The concentration of the above-mentioned iodine in the above-mentioned cleaning solution may be 20 g/L or less.

A seventh aspect of the present invention is the cleaning method according to each of the above-mentioned first aspect to the above-mentioned sixth aspect, wherein The pH of the above-mentioned cleaning solution may be 5.00 or less.

An eighth aspect of the present invention is the cleaning method of each of the above-mentioned first aspect to the above-mentioned seventh aspect, wherein The above mask may also include an iron alloy containing nickel.

A ninth aspect of the present invention is the cleaning method according to each of the above-mentioned first aspect to the above-mentioned eighth aspect, wherein The thickness of the above-mentioned mask may also be 100 μm or less.

A tenth aspect of the present invention is the cleaning method according to each of the above-mentioned first aspect to the above-mentioned ninth aspect, wherein The cleaning step can also remove the metal material attached to the mask.

An eleventh aspect of the present invention is the cleaning method of the tenth aspect above, wherein The above metal materials may also include magnesium-silver alloys.

A twelfth aspect of the present invention is a cleaning solution for cleaning a mask, and Contains potassium iodide and iodine.

A thirteenth aspect of the present invention is a cleaning device that cleans a mask, and Equipped with at least one cleaning tank for storing cleaning liquid, The above-mentioned cleaning solution contains potassium iodide and iodine.

The 14th aspect of the present invention is the cleaning device of the above-mentioned 13th aspect, which may be The at least one cleaning tank includes a first cleaning tank that accommodates the cleaning liquid, and a second cleaning tank that accommodates the cleaning liquid, The said cleaning apparatus is equipped with the conveyance mechanism which conveys the said mask from the said 1st cleaning tank to the said 2nd cleaning tank.

A fifteenth aspect of the present invention is a manufacturing method, which is a manufacturing method of an organic device, and includes: the second electrode forming step, which is formed on the organic layer on the first electrode on the substrate, using two or more masks in sequence, and forming the second electrode by vapor deposition; and In the cleaning step, the mask is cleaned by bringing the cleaning solution described in the twelfth aspect into contact with the mask.

An embodiment of the present invention will be described in detail with reference to the drawings. In addition, the embodiment shown below is an example of the embodiment of the present invention, and the present invention is not to be construed as being limited to these embodiments.

First, the organic device 100 having electrodes formed by using a mask will be described. FIG. 1 is a cross-sectional view showing an example of an organic device 100 .

The organic device 100 includes a substrate 110 and a plurality of elements 115 arranged along the in-plane direction of the substrate 110 . The element 115 is, for example, a pixel. The substrate 110 may also include two or more types of elements 115 . For example, the substrate 110 may include the first element 115A and the second element 115B. Although not shown, the substrate 110 may also include a third element. The first element 115A, the second element 115B, and the third element are, for example, red pixels, blue pixels, and green pixels.

The element 115 may also have a first electrode 120 , an organic layer 130 located on the first electrode 120 , and a second electrode 140 located on the organic layer 130 .

The organic device 100 may also include an insulating layer 160 located between two adjacent first electrodes 120 in a plan view. The insulating layer 160 contains, for example, polyimide. The insulating layer 160 may also overlap with the end of the first electrode 120 .

The organic device 100 can also be of an active matrix type. For example, although not shown, the organic device 100 may also include switches that are electrically connected to each of the plurality of elements 115 . The switches are, for example, transistors. The switches can control ON/OFF of the voltage or current for the corresponding element 115 .

The substrate 110 may also be an insulating plate-like member. The substrate 110 preferably has transparency to transmit light therethrough. As the material of the substrate 110, for example, a non-flexible rigid material such as quartz glass, Pyrex (registered trademark) glass, and a synthetic quartz plate, or a flexible flexible material such as a resin film, an optical resin plate, and a thin glass can be used. material, etc. In addition, the base material may be a laminate having a barrier rib layer on one side or both sides of a resin film.

The element 115 is configured to achieve certain functions by applying a voltage between the first electrode 120 and the second electrode 140 or by flowing a current between the first electrode 120 and the second electrode 140 . For example, when the element 115 is a pixel of an organic EL display device, the element 115 can emit light constituting an image.

The first electrode 120 includes a conductive material. For example, the first electrode 120 includes metal, conductive metal oxide, or other conductive inorganic materials. The first electrode 120 may also include transparent and conductive metal oxides such as indium tin oxide (ITO) and indium zinc oxide (IZO).

The organic layer 130 includes organic materials. When the organic layer 130 is powered on, the organic layer 130 may perform certain functions. The so-called electrification means applying a voltage to the organic layer 130 or flowing a current in the organic layer 130 . As the organic layer 130, a light-emitting layer that emits light by energization, a layer that changes the transmittance or refractive index of light by energization, or the like can be used. The organic layer 130 may also include organic semiconductor materials.

As shown in FIG. 1 , the organic layer 130 may also include a first organic layer 130A and a second organic layer 130B. The first organic layer 130A is included in the first element 115A. The second organic layer 130B is included in the second element 115B. Although not shown, the organic layer 130 may also include the third organic layer included in the third element. The first organic layer 130A, the second organic layer 130B, and the third organic layer are, for example, a red light-emitting layer, a blue light-emitting layer, and a green light-emitting layer.

When a voltage is applied between the first electrode 120 and the second electrode 140, the organic layer 130 located therebetween is driven. When the organic layer 130 is a light-emitting layer, light is emitted from the organic layer 130, and the light is extracted to the outside from the second electrode 140 side or the first electrode 120 side.

The organic layer 130 may further include a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, a charge generation layer, and the like.

The second electrode 140 includes a conductive material such as a metal. The second electrode 140 is formed on the organic layer 130 by an evaporation method using a mask. As the material constituting the second electrode 140, platinum, gold, silver, copper, iron, tin, chromium, aluminum, indium, lithium, sodium, potassium, calcium, magnesium, chromium, indium tin oxide (ITO), indium can be used Zinc oxide (IZO), carbon, etc. These materials may be used alone or in combination of two or more. When using 2 or more types, you may laminate|stack the layer which consists of each material. In addition, an alloy containing two or more kinds of materials may also be used. For example, magnesium alloys such as MgAg, and aluminum alloys such as AlLi, AlCa, and AlMg can be used. MgAg is also called magnesium-silver alloy. Magnesium-silver alloy is preferably used as the material of the second electrode 140 . Alkali metal and alkaline earth metal alloys and the like can also be used. For example, lithium fluoride, sodium fluoride, potassium fluoride and the like can also be used.

The weight ratio of silver in the magnesium-silver alloy may be, for example, 5% or more, 50% or more, or 90% or more. The weight ratio of silver may be, for example, 95% or less, 97% or less, or 99% or less. The range of the weight ratio of silver can be specified by Group 1 consisting of 5%, 50% and 90%, and/or Group 2 consisting of 95%, 97% and 99%. The range of the weight ratio of silver can also be prescribed|regulated by the combination of any one of the value contained in the said 1st group, and any one of the value contained in the said 2nd group. The range of the weight ratio of silver can also be specified by the combination of any two of the values contained in the above-mentioned first group. The range of the weight ratio of silver can also be specified by the combination of any two of the values included in the above-mentioned second group. For example, it can be more than 5% and less than 99%, more than 5% and less than 97%, more than 5% and less than 95%, more than 5% and less than 90%, more than 5% and less than 50%, more than 50% and less than 99%, more than 50% and less than 97% Below, above 50%, below 95%, above 50%, below 90%, above 90%, below 99%, above 90%, below 97%, above 90%, below 95%, above 95%, below 99%, above 95%, below 97% , 97% or more and 99% or less.

As shown in FIG. 1 , the second electrode 140 may also include a first layer 140A and a second layer 140B. The first layer 140A is a layer formed by the vapor deposition step using the first mask. The second layer 140B is a layer formed by the vapor deposition step using the second mask. In this way, in this embodiment, the second electrode 140 may be formed using two or more masks. Thereby, the degree of freedom of the pattern of the second electrode 140 in plan view is improved. For example, the organic device 100 may include a region where the second electrode 140 does not exist in a plan view. The region where the second electrode 140 does not exist can have higher transmittance than the region where the second electrode 140 exists.

As shown in FIG. 1 , the end of the first layer 140A and the end of the second layer 140B may partially overlap. Thereby, the first layer 140A and the second layer 140B can be electrically connected.

Although not shown, the second electrode 140 may include other layers such as the third layer. Other layers such as the third layer may be electrically connected to the first layer 140A and the second layer 140B.

In the following description, the term "second electrode 140" and symbols are used when describing the common configuration of the first layer 140A, the second layer 140B, and the third layer among the configurations of the second electrode 140 .

The thickness of the second electrode 140 may be, for example, 5 nm or more, 20 nm or more, 50 nm or more, or 100 nm or more. The thickness of the first layer 140A may be, for example, 200 nm or less, 500 nm or less, 1 μm or less, or 100 μm or less. The range of the thickness of the second electrode 140 can be specified by the first group consisting of 5 nm, 20 nm, 50 nm and 100 nm, and/or the second group consisting of 200 nm, 500 nm, 1 μm and 100 μm . The range of the thickness of the second electrode 140 may be defined by a combination of any one of the values included in the first group and any one of the values included in the second group. The range of the thickness of the second electrode 140 may also be defined by a combination of any two of the values included in the first group. The range of the thickness of the second electrode 140 may also be defined by a combination of any two of the values included in the second group. For example, it can be 5 nm to 100 μm, 5 nm to 1 μm, 5 nm to 500 nm, 5 nm to 200 nm, 5 nm to 100 nm, 5 nm to 50 nm, 5 nm to 20 nm below 20 nm and below 100 μm, above 20 nm and below 1 μm, above 20 nm and below 500 nm, above 20 nm and below 200 nm, above 20 nm and below 100 nm, above 20 nm and below 50 nm, above 50 nm and below 100 μm , 50 nm to 1 μm, 50 nm to 500 nm, 50 nm to 200 nm, 50 nm to 100 nm, 100 nm to 100 μm, 100 nm to 1 μm, 100 nm to 500 nm, Above 100 nm and below 200 nm, above 200 nm and below 100 μm, above 200 nm and below 1 μm, above 200 nm and below 500 nm, above 500 nm and below 100 μm, above 500 nm and below 1 μm, above 1 μm and below 100 μm.

Next, a method of forming the second electrode 140 by the vapor deposition method will be described. FIG. 2 is a diagram showing the vapor deposition apparatus 10 . The vapor deposition apparatus 10 performs vapor deposition processing of vapor deposition of the vapor deposition material on the object.

As shown in FIG. 2 , the vapor deposition apparatus 10 may include a vapor deposition source 6 , a heater 8 , and a mask device 40 therein. Moreover, the vapor deposition apparatus 10 may further be equipped with the exhaust means for making the inside of the vapor deposition apparatus 10 into a vacuum atmosphere. The vapor deposition source 6 is, for example, a crucible, and accommodates vapor deposition materials 7 such as metal materials. The heater 8 heats the vapor deposition source 6 to vaporize the vapor deposition material 7 in a vacuum atmosphere. The shielding device 40 is arranged to face the crucible 6 .

As shown in FIG. 2 , the mask device 40 may also include at least one mask 50 and a frame 41 supporting the mask 50 . Frame 41 may also include openings 42 . The cover 50 can also be fixed to the frame 41 in a manner of crossing the opening 42 in a plan view. In addition, the frame 41 can also support the mask 50 in a state of being stretched along the surface direction, so as to suppress the bending of the mask 50 .

As shown in FIG. 2 , the mask device 40 is arranged in the vapor deposition device 10 so that the mask 50 faces the substrate 110 as an object to which the vapor deposition material 7 is attached. The mask 50 includes a plurality of through holes 53 through which the vapor deposition material 7 flying from the vapor deposition source 6 passes. In the following description, among the surfaces of the mask 50, the surface on the substrate 110 side is referred to as the first surface 51a, and the surface on the opposite side of the first surface 51a is referred to as the second surface 51b.

As shown in FIG. 2 , the vapor deposition apparatus 10 may include the cooling plate 4 arranged on the second surface 112 side of the substrate 110 . The cooling plate 4 may also have a flow path for circulating the refrigerant inside the cooling plate 4 . The cooling plate 4 can suppress the temperature rise of the substrate 110 during the vapor deposition step.

As shown in FIG. 2 , the vapor deposition apparatus 10 may include the magnet 5 arranged on the second surface 112 side of the substrate 110 . The magnet 5 may also be arranged on the surface of the cooling plate 4 on the opposite side to the shielding device 40 . The magnet 5 can attract the mask 50 of the mask device 40 toward the substrate 110 by magnetic force. Thereby, the gap between the mask 50 and the substrate 110 can be reduced or eliminated. Thereby, the generation of shadows in the vapor deposition step can be suppressed. In this case, the so-called shadow refers to the phenomenon that the vapor deposition material 7 enters the gap between the mask 50 and the substrate 110 , thereby causing the thickness of the second electrode 140 to become uneven.

FIG. 3 is a plan view showing an example of the mask device 40 . The shape of the mask 50 may be a rectangle having a longitudinal direction and a width direction orthogonal to the longitudinal direction. The size of the mask 50 in the length direction is smaller than the size of the mask 50 in the width direction. In the following description, the longitudinal direction is also referred to as the first mask direction, and the width direction is also referred to as the second mask direction. The mask 50 may also include a first end 501 , a second end 502 , a third end 503 and a fourth end 504 . The first end 501 and the second end 502 are the end edges of the mask 50 in the first direction D1. The first end 501 and the second end 502 may also include portions extending in the second direction D2 of the mask. The third end 503 and the fourth end 504 are the end edges of the mask 50 covering the second direction D2. The third end 503 and the fourth end 504 may also include portions extending in the first direction D1 of the mask.

The mask device 40 may also include a plurality of masks 50 arranged in the second direction D2 of the mask. The mask 50 may also be fixed to the frame 41 at both ends of the mask in the first direction D1, for example, by welding. Both ends of the mask 50 may also be fixed to the frame 41 in a state where tension is applied to the mask 50 in the mask first direction D1. After the mask 50 is fixed to the frame 41, the frame 41 can also apply tension to the mask 50 in the mask first direction D1.

In FIG. 3 , the symbol L represents the size of the mask 50 in the first direction D1 of the mask, that is, the length of the mask 50 . The length L may be, for example, 150 mm or more, 300 mm or more, or 600 mm or more. The length L may be, for example, 1000 mm or less, 1700 mm or less, or 2500 mm or less. The range of length L may be specified by the first group consisting of 150 mm, 300 mm and 600 mm, and/or the second group consisting of 1000 mm, 1700 mm and 2500 mm. The range of the length L may be defined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the length L can also be defined by a combination of any two of the values included in the first group described above. The range of the length L can also be defined by the combination of any two of the values included in the above-mentioned second group. For example, it can be 150 mm or more and 2500 mm or less, 150 mm or more and 1700 mm or less, 150 mm or more and 1000 mm or less, 150 mm or more and 600 mm or less, 150 mm or more and 300 mm or less, 300 mm or more and 2500 mm or less, or 300 mm or more than 1700 mm? Less than 300 mm and less than 1000 mm, more than 300 mm and less than 600 mm, more than 600 mm and less than 2500 mm, more than 600 mm and less than 1700 mm, more than 600 mm and less than 1000 mm, more than 1000 mm and less than 2500 mm, more than 1000 mm and less than 1700 mm , 1700 mm above 2500 mm below.

In FIG. 3 , the symbol W represents the size of the mask 50 in the second direction D2 of the mask, that is, the width of the mask 50 . The width W is smaller than the length L. The ratio of the length L to the width W, that is, L/W, may be, for example, 2 or more, 5 or more, or 10 or more. L/W may be, for example, 20 or less, 50 or less, or 100 or less. The range of L/W can be specified by the first group consisting of 2, 5 and 10, and/or the second group consisting of 20, 50 and 100. The range of L/W may be defined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of L/W can also be defined by a combination of any two of the values included in the first group described above. The range of L/W can also be specified by the combination of any two of the values included in the above-mentioned second group. For example, 2 or more and 100 or less, 2 or more and 50 or less, 2 or more and 20 or less, 2 or more and 10 or less, 2 or more and 5 or less, 5 or more and 100 or less, 5 or more and 50 or less, 5 or more and 20 or less, 5 or more than 10 or less, or 10 or more. 100 or less, 10 or more and 50 or less, 10 or more and 20 or less, 20 or more and 100 or less, 20 or more and 50 or less, 50 or more and 100 or less.

When the mask 50 is cleaned while applying ultrasonic waves to the cleaning solution as described below, the mask 50 may generate a wave of natural vibration. Since the length L is greater than the width W, the natural vibration waves are easily generated in the direction of the length L, that is, in the first direction D1 of the mask. Since it is easy to specify the direction of the natural vibration wave, it is easy to take countermeasures when the damage to the mask 50 caused by cavitation is related to the natural vibration.

The frame 41 can also have a rectangular outline. For example, the frame 41 may also include: a pair of first edge regions 411 extending in the first direction D1 of the mask; and a pair of second edge regions 412 extending in the second direction D2 of the mask. The end of the mask 50 in the first direction D1 of the mask can also be fixed to the second side region 412 . The second side area 412 may also be longer than the first side area 411 . The opening 42 of the frame 41 may also be surrounded by a pair of first side regions 411 and a pair of second side regions 412 .

FIG. 4 is a plan view showing an example of the mask 50 . As shown in FIGS. 3 and 4 , the mask 50 may also include a first end portion 50 a , a second end portion 50 b , a cell 54 and a surrounding area 55 . The cells 54 include a group of through holes 53 regularly arranged along the surface direction of the mask 50 . When using the mask 50 to manufacture a display device such as an organic EL display device, one cell 54 corresponds to a display area of one organic EL display device. The surrounding area 55 is the area surrounding the cells 54 . The first end portion 50a extends from the first end 501 to the region of the cells 54 . The second end portion 50b extends from the second end 502 to the region of the cells 54 . The first end portion 50 a and the second end portion 50 b are fixed to the second side region 412 .

As shown in FIGS. 3 and 4 , the mask 50 may also include two or more cells 54 arranged in the first direction D1 of the mask. In this case, the first end 50a is closest to the area between the meshes 54 of the first end 501 and the first end 501, and the second end 50b is closest to the meshes 54 of the second end 502 and the second end 502. The area between ends 502.

Next, the through hole 53 of the mask 50 will be described in detail. FIG. 5 is a plan view showing an example of the first mask 50 used for forming the first layer 140A of the second electrode 140 described above. FIG. 6 is a cross-sectional view of the first mask 50 taken along the line IV-IV of FIG. 5 . In the following description, the first mask 50 is also simply referred to as the mask 50 . The mask 50 may also include a plurality of through holes 53 arranged in the surface direction of the mask 50 . The through hole 53 penetrates the metal plate 51 from the first surface 51a to the second surface 51b. The plurality of through holes 53 may also be arranged along two different directions.

The through hole 53 may also include: a first recess 531 located on the first surface 51a side of the metal plate 51 ; and a second recess 532 located on the second surface 51b side and connected to the first recess 531 . In a plan view, the dimension r2 of the second concave portion 532 may also be larger than the dimension r1 of the first concave portion 531 . The 1st recessed part 531 may be formed by the method which processes the metal plate 51 by etching etc. from the 1st surface 51a side. The second recessed portion 532 may be formed by processing the metal plate 51 from the second surface 51b side by etching or the like.

The first concave portion 531 and the second concave portion 532 are connected at the peripheral connecting portion 533 . The connecting portion 533 can also be divided to form a through portion 534 having the smallest opening area of the through hole 53 when the cover 50 is viewed from above.

The dimension r of the through portion 534 in the direction in which the through holes 53 are arranged may be, for example, 10 μm or more, 50 μm or more, or 100 μm or more. The dimension r of the penetration portion 534 may be, for example, 500 μm or less, 1 mm or less, or 5 mm or less. The range of the dimension r of the through portion 534 can be defined by the first group consisting of 10 μm, 50 μm and 100 μm, and/or the second group consisting of 500 μm, 1 mm and 5 mm. The range of the dimension r of the penetration portion 534 may be defined by a combination of any one of the values included in the first group and any one of the values included in the second group. The range of the dimension r of the penetration portion 534 can also be defined by the combination of any two of the values included in the first group described above. The range of the dimension r of the penetration portion 534 may also be defined by the combination of any two of the values included in the second group described above. For example, 10 μm or more and 5 mm or less, 10 μm or more and 1 mm or less, 10 μm or more and 500 μm or less, 10 μm or more and 100 μm or less, 10 μm or more and 50 μm or less, 50 μm or more and 5 mm or less, 50 μm or more and 1 mm 50 μm or more, 500 μm or less, 50 μm or more, 100 μm or less, 100 μm or more, 5 mm or less, 100 μm or more, 1 mm or less, 100 μm or more, 500 μm or less, 500 μm or more, 5 mm or less, 500 μm or more and 1 mm or less , 1 mm or more and 5 mm or less.

The dimension r of the through portion 534 is defined by the light passing through the through hole 53 . For example, parallel light is incident on one of the first surface 51 a or the second surface 51 b of the mask 50 along the normal direction of the mask 50 , and the through hole 53 passes through the through hole 53 from the other of the first surface 51 a or the second surface 51 b the person shoots out. Furthermore, the size of the area occupied by the emitted light in the plane direction of the mask 50 is used as the size r of the through portion 534 .

The thickness T of the mask 50 may be, for example, 5 μm or more, 10 μm or more, 15 μm or more, or 20 μm or more. The thickness T of the mask 50 may be, for example, 25 μm or less, 30 μm or less, 50 μm or less, or 100 μm or less. The range of the thickness T of the mask 50 can be specified by the first group consisting of 5 μm, 10 μm, 15 μm and 20 μm, and/or the second group consisting of 25 μm, 30 μm, 50 μm and 100 μm . The range of the thickness T of the mask 50 may also be defined by a combination of any one of the values included in the first group and any one of the values included in the second group. The range of the thickness T of the mask 50 can also be defined by the combination of any two of the values included in the first group. The range of the thickness T of the mask 50 can also be defined by the combination of any two of the values included in the second group. For example, 5 μm or more and 100 μm or less, 5 μm or more and 50 μm or less, 5 μm or more and 30 μm or less, 5 μm or more and 25 μm or less, 5 μm or more and 20 μm or less, 5 μm or more and 15 μm or less, 5 μm or more and 10 μm 10 μm or more, 100 μm or less, 10 μm or more, 50 μm or less, 10 μm or more, 30 μm or less, 10 μm or more, 25 μm or less, 10 μm or more, 20 μm or less, 10 μm or more, 15 μm or less, 15 μm or more and 100 μm or less , 15 μm to 50 μm, 15 μm to 30 μm, 15 μm to 25 μm, 15 μm to 20 μm, 20 μm to 100 μm, 20 μm to 50 μm, 20 μm to 30 μm, 20 μm to 25 μm, 25 μm to 100 μm, 25 μm to 50 μm, 25 μm to 30 μm, 30 μm to 100 μm, 30 μm to 50 μm, 50 μm to 100 μm.

As a method of measuring the thickness T of the mask 50, a contact-type measuring method can be used. As a measuring method of the contact type, "MT1271" of HEIDENHAIN-METRO, a length gauge manufactured by HEIDENHAIN, which is equipped with a ball bushing-guided plunger, can be used.

Furthermore, the cross-sectional shape of the through hole 53 of the mask 50 is not limited to the shape shown in FIG. 6 . In addition, various methods can be used for the formation method of the through hole 53 of the mask 50, and the method is not limited to etching. The mask 50 may also be formed, for example, by plating in such a manner as to generate the through holes 53 .

As the material constituting the mask 50, for example, an iron alloy containing nickel can be used. The iron alloy may further contain cobalt in addition to nickel. For example, as the material of the mask 50 , an iron alloy in which the total content of nickel and cobalt is 30 mass % or more and 54 mass % or less, and the cobalt content is 0 mass % or more and 6 mass % or less can be used. As the iron alloy containing nickel, or nickel and cobalt, Invar alloy materials containing nickel in an amount of 34 mass % or more and 38 mass % or less, or an alloy containing cobalt in addition to nickel in an amount of 30 mass % or more and 34 mass % or less can be used. Super Invar material, Alloy 42 containing 40 mass % or more and 43 mass % or less of nickel, low thermal expansion Fe-Ni based plating alloy containing 38 mass % or more and 54 mass % or less of nickel, etc. By using such an iron alloy, the thermal expansion coefficient of the mask 50 can be reduced. For example, when a glass substrate is used as the substrate 110, the thermal expansion coefficient of the mask 50 can be set to a lower value equivalent to the thermal expansion coefficient of the glass substrate. Thereby, the dimensional accuracy or positional accuracy of the vapor deposition layer formed on the substrate 110 during the vapor deposition step can be suppressed from being lowered due to the difference in thermal expansion coefficient between the mask 50 and the substrate 110 .

In the manufacturing method of the organic device 100, in addition to the use of the first mask 50, a second mask may also be used. The second mask is used, for example, when forming the second layer 140B of the second electrode 140 described above. Like the first mask 50, the second mask may include a plurality of through holes arranged in the surface direction of the second mask. The through holes of the second mask are formed so that the second layer 140B partially overlaps the first layer 140A.

Next, the problem to be solved by this embodiment will be described.

In the step of forming a layer on the substrate 110 by vapor deposition using the mask 50 , the vapor deposition material is attached and deposited on the mask 50 . It is considered that when the deposition amount increases, the deposition is peeled off from the mask 50 during the vapor deposition step. In addition, it is considered that when the deposition amount increases, the shape change of the through hole due to the deposition cannot be ignored. Therefore, when the mask 50 is reused in a plurality of vapor deposition steps, it is preferable to wash the mask 50 to remove the deposits.

Previously, an evaporation method using a mask was used to form the organic layer 130 . The organic layer 130 is formed by attaching an organic material to the first electrode 120 through the through hole of the mask. An organic solvent is used as a cleaning solution for cleaning the mask to which the organic material is attached.

When the second electrode 140 is formed by the vapor deposition method using the mask 50, it is required to establish a method for cleaning the mask 50 to which the conductive material is attached. FIG. 7 is a diagram showing an example of the mask 50 to which the vapor deposition material 7 containing the conductive material is attached.

As the cleaning solution for removing the conductive material, it is considered to use an acid. However, in the case of using acid, it is believed that the metal plate 51 of the mask 50 will dissolve. Moreover, it is also considered that an environmental problem will arise.

As the cleaning solution for removing the conductive material, an aqueous solution containing iodine and an iodine compound showing weak acidity to such an extent that the metal plate 51 of the mask 50 is not dissolved is considered to be used.

However, the inventors of the present invention have found out that, when an aqueous solution containing iodine and an iodine compound is used, defects such as holes may be generated in the mask 50 . FIG. 8 is a cross-sectional view showing an example of the defect 56 generated in the mask 50 in the cleaning step. When the defect 56 reaches the wall surface of the through hole 53, the dimension r of the through portion 534 may change. It is considered that, for example, as shown in FIG. 8 , the size r of the through hole 53 in which the defect 56 has occurred is larger than the size r of the other through holes 53 . When the second electrode 140 is formed using the mask 50 in which the defect 56 is formed, the accuracy of the shape, size, and the like of the second electrode 140 is lowered.

According to the cleaning method of this embodiment, such a problem can be solved. Hereinafter, the cleaning method will be described. The cleaning method includes a cleaning step of cleaning the mask 50 by bringing the cleaning liquid into contact with the mask 50 . FIG. 9 is a diagram showing an example of a cleaning apparatus 60 for carrying out the cleaning method.

The cleaning device 60 includes a cleaning tank 61 that directly or indirectly accommodates the cleaning liquid 70 . The mask 50 can be cleaned by performing the dipping step of immersing the mask 50 in the cleaning solution 70 . The cleaning liquid 70 may be directly accommodated in the cleaning tank 61 , or may be indirectly accommodated in the cleaning tank 61 . The mask 50 may also be immersed in the cleaning solution 70 while being fixed to the frame 41 . That is, in the immersion step, the mask device 40 including the frame 41 and the mask 50 may be immersed in the cleaning solution 70 . "Directly" means that the cleaning liquid 70 is in contact with the wall surface of the cleaning tank 61 . "Indirectly" means that the cleaning liquid 70 is not in contact with the wall surface of the cleaning tank 61 . In the example of indirect storage, the container containing the cleaning liquid 70 is arranged inside the cleaning tank 61 . According to this aspect, contamination of the wall surface of the cleaning tank 61 with the cleaning liquid 70 can be suppressed. Liquids, such as water, may be accommodated in the washing tank 61 . As the material constituting the container, glass, resin, metal, or the like can be used. As the glass, soda lime glass, alkali-free glass, quartz, enamel, or the like can be used. As the resin, epoxy resin, melamine resin, phenolic resin, polyurethane, polycarbonate, fluororesin, acrylic resin, nylon, polypropylene, polyethylene, ABS (Acrylonitrile Butadiene Styrene, acrylonitrile, etc.) can be used. -butadiene-styrene), polystyrene, vinyl chloride resin, etc. The so-called ABS refers to the copolymerization resin of acrylonitrile, butadiene and styrene. As the fluororesin, PTFE (Polytetrafluoroethylene, polytetrafluoroethylene), ETFE (Ethylene-tetrafluoroethylene, ethylene-tetrafluoroethylene), etc. can be used. The so-called PTFE refers to the polymer of tetrafluoroethylene. The so-called ETFE refers to the copolymer of tetrafluoroethylene and ethylene.

The cleaning solution 70 will be described. The cleaning solution 70 contains potassium iodide and iodine. Potassium iodide is in a chemical equilibrium state represented by the following formula (1), for example. Iodine is in a chemical equilibrium state represented by the following formula (2), for example.

下述式(5)、(6)或式(5)、(7)係被認為會於銀溶解於洗淨液70時產生之化學反應之一例。

The cleaning solution 70 may also remove the conductive material from the mask 50 by dissolving the conductive material. The chemical reaction that occurs when the conductive material is removed by the cleaning solution 70 will be described. Here, the case where the electroconductive material contains magnesium and silver is demonstrated. The following formulae (3) and (4) are examples of chemical reactions considered to occur when magnesium is dissolved in the cleaning solution 70 .

The following formulae (5) and (6) or formulae (5) and (7) are examples of chemical reactions considered to occur when silver is dissolved in the cleaning solution 70 .

Chemical reactions other than the above-mentioned formulas (1) to (7) may also occur in the cleaning solution 70 .

The temperature of the cleaning solution 70 may be, for example, 10°C or higher, 15°C or higher, 18°C or higher, or 20°C or higher. The temperature of the cleaning solution 70 may be less than 25°C, for example, or may be 23°C or lower. The temperature range of the cleaning solution 70 can be specified by the first group consisting of 10°C, 15°C, 18°C and 20°C, and/or the second group consisting of 25°C and 23°C. The temperature range of the cleaning solution 70 may be defined by a combination of any one of the values included in the first group and any one of the values included in the second group. The temperature range of the cleaning solution 70 can also be defined by a combination of any two of the values included in the first group. The temperature range of the cleaning solution 70 may also be defined by a combination of any two of the values included in the above-mentioned second group. For example, it can be 10°C or higher and 23°C or lower, 10°C or higher and less than 25°C, 10°C or higher and 20°C or lower, 10°C or higher and 18°C or lower, 10°C or higher and 15°C or lower, 15°C or higher and 23°C or lower, and 15°C or higher. and below 25°C, above 15°C and below 20°C, above 15°C and below 18°C, above 18°C and below 23°C, above 18°C and below 25°C, above 18°C and below 20°C, above 20°C and below 23°C, 20°C or more and less than 25°C, 23°C or more and less than 25°C.

The higher the temperature, the more easily the conductive material dissolves in the cleaning solution 70 . The lower the temperature, the more suppressed the occurrence of defects in the mask 50 in the cleaning step.

As shown in FIG. 9 , the cleaning device 60 may include a temperature control device 63 . The temperature control device 63 controls the temperature of the cleaning liquid 70 contained in the cleaning tank 61 . The temperature control device 63 can control the temperature of the cleaning liquid 70 so that the temperature of the cleaning liquid 70 is within the above-mentioned range. The temperature control device 63 may also have a function or capability to control the temperature of the cleaning solution 70 outside the above-mentioned range. For example, the temperature control device 63 may have a function or capability of controlling the temperature of the cleaning solution 70 to be 10°C or higher and 30°C or lower, or 15°C or higher and 30°C or lower.

The concentration of iodine in the cleaning solution 70 may be, for example, 5 g/L or more, 6 g/L or more, or 8 g/L or more. The concentration of iodine may be, for example, 10 g/L or less, 15 g/L or less, or 20 g/L or less. The range of iodine concentration can be the first group consisting of 5 g/L, 6 g/L and 8 g/L, and/or the second group consisting of 10 g/L, 15 g/L and 20 g/L Group rules. The range of the concentration of iodine can also be defined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the concentration of iodine can also be defined by the combination of any two of the values included in the above-mentioned first group. The range of the concentration of iodine can also be defined by the combination of any two of the values contained in the above-mentioned second group. For example, it can be more than 5 g/L but less than 20 g/L, more than 5 g/L but less than 15 g/L, more than 5 g/L but less than 10 g/L, more than 5 g/L but less than 8 g/L, 5 g/L or more Above L and below 6 g/L, above 6 g/L but below 20 g/L, above 6 g/L but below 15 g/L, above 6 g/L but below 10 g/L, above 6 g/L and below 8 g/L Below, 8 g/L or more, 20 g/L or less, 8 g/L or more, 15 g/L or less, 8 g/L or more, 10 g/L or less, 10 g/L or more, 20 g/L or less, 10 g/L Above 15 g/L and below, above 15 g/L and below 20 g/L.

The concentration of iodine can be adjusted, for example, by adding potassium iodide, solid iodine, or water to the cleaning solution 70 .

The iodine concentration is a value assuming that all the iodine present in the cleaning solution 70 is in the form of the iodine molecule I ₂ . As a method for measuring the concentration of iodine, redox titration can be used.

The pH of the cleaning solution 70 may be, for example, 4.00 or more, 4.10 or more, or 4.25 or more. The pH of the cleaning solution 70 may be, for example, 4.50 or less, 4.80 or less, or 5.00 or less. The pH range of the cleaning solution 70 can be defined by the first group consisting of 4.00, 4.10 and 4.25, and/or the second group consisting of 4.50, 4.80 and 5.00. The pH range of the cleaning solution 70 may be defined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The pH range of the cleaning solution 70 can also be defined by a combination of any two of the values included in the first group described above. The range of the pH of the cleaning solution 70 can also be defined by a combination of any two of the values included in the above-mentioned second group. For example, it can be 4.00 or more and 5.00 or less, 4.00 or more and 4.80 or less, 4.00 or more and 4.50 or less, 4.00 or more and 4.25 or less, 4.00 or more than 4.10 or less, 4.10 or more than 5.00 or less, 4.10 or more than 4.80 or less, 4.10 or more than 4.50 or less, 4.10 or more than 4.25 or less, or 4.25 or more. 5.00 or less, 4.25 or more, 4.80 or less, 4.25 or more, 4.50 or less, 4.50 or more, 5.00 or less, 4.50 or more, 4.80 or less, 4.80 or more and 5.00 or less.

As a method for measuring the pH of iodine, AS ONE pH meter AS600 can be used. As the pH standard solution for calibrating the pH meter, pH 4.01, pH 6.86, and pH 9.18 can be used.

The time of the cleaning treatment using the cleaning liquid 70 may be, for example, 1 minute or longer, 5 minutes or longer, or 10 minutes or longer. The time of the washing step may be, for example, 20 minutes or less, 40 minutes or less, or 60 minutes or less. The time range of the cleaning step can be specified by the first group consisting of 1 minute, 5 minutes and 10 minutes, and/or the second group consisting of 20 minutes, 40 minutes and 60 minutes. The time range of the cleaning step may be defined by a combination of any one of the values included in the first group and any one of the values included in the second group. The time range of the cleaning step can also be defined by a combination of any two of the values included in the first group described above. The time range of the cleaning step can also be defined by a combination of any two of the values included in the second group described above. For example, 1 minute to 60 minutes, 1 minute to 40 minutes, 1 minute to 20 minutes, 1 minute to 10 minutes, 1 minute to 5 minutes, 5 minutes to 60 minutes, 5 minutes to 40 minutes less than 5 minutes but less than 20 minutes, more than 5 minutes but less than 10 minutes, more than 10 minutes but less than 60 minutes, more than 10 minutes but less than 40 minutes, more than 10 minutes but less than 20 minutes, more than 20 minutes but less than 60 minutes, more than 20 minutes but less than 40 minutes , 40 minutes or more and 60 minutes or less.

The cleaning device 60 may include two or more cleaning tanks 61 . In the example shown in FIG. 9 , the cleaning device 60 includes a first cleaning tank 61 , a second cleaning tank 61 , and a third cleaning tank 61 . In this case, the cleaning device 60 may be provided with a transport mechanism for transporting the mask 50 between the cleaning tanks 61 . In the example shown in FIG. 9 , the conveying mechanism immerses the mask 50 in the cleaning liquid 70 of the first cleaning tank 61 as indicated by the arrow A1. Then, after the processing time has elapsed, the transfer mechanism pulls up the mask 50 from the cleaning liquid 70 in the first cleaning tank 61 . Next, the conveyance mechanism conveys the mask 50 from the first cleaning tank 61 to the second cleaning tank 61 as indicated by the arrow B1. Next, the transfer mechanism immerses the mask 50 in the cleaning liquid 70 of the second cleaning tank 61 as indicated by the arrow A2. Then, after the processing time has elapsed, the transfer mechanism pulls up the mask 50 from the cleaning liquid 70 in the second cleaning tank 61 . Next, the conveyance mechanism conveys the mask 50 from the second cleaning tank 61 to the third cleaning tank 61 as indicated by the arrow B2. Next, the transfer mechanism immerses the mask 50 in the cleaning liquid 70 of the third cleaning tank 61 as indicated by the arrow A3. Then, after the processing time has elapsed, the transfer mechanism pulls up the mask 50 from the cleaning liquid 70 in the third cleaning tank 61 .

When the cleaning device 60 includes two or more cleaning tanks 61 , the processing time in each cleaning tank 61 can be kept constant, and the total time of cleaning processing received by the mask 50 can be adjusted. When the cleaning device 60 includes two or more cleaning tanks 61 , the numerical range of the time of the cleaning process can be applied to the total time of the cleaning process received by the mask 50 in the plurality of cleaning tanks 61 .

The cleaning step may include an ultrasonic step of applying ultrasonic waves to the cleaning liquid 70 . In this case, the cleaning device 60 may also include the ultrasonic control device 62 . The ultrasonic control device 62 controls the frequency, output, and the like of ultrasonic waves applied to the cleaning liquid 70 . The ultrasonic control device 62 includes, for example, an ultrasonic vibrator. The ultrasonic vibrator includes, for example, piezoelectric ceramics. The ultrasonic vibrator may also be arranged inside the cleaning tank 61 so as to be in contact with the cleaning liquid 70 . In this case, the ultrasonic transducer may be of a so-called immersion type which is not fixed to the cleaning tank 61 . Alternatively, the ultrasonic transducer may be fixed to the cleaning tank 61 . The ultrasonic vibrator can also be fixed on the wall surface of the cleaning tank 61 . For example, the ultrasonic vibrator may be disposed on the bottom surface of the cleaning tank 61 outside the cleaning tank 61 .

The frequency of the ultrasonic wave may be, for example, 50 kHz or higher, 75 kHz or higher, or 100 kHz or higher. The frequency of the ultrasonic wave may be, for example, 200 kHz or less, 500 kHz or less, or 1 MHz or less. The frequency range of ultrasonic waves may be specified by Group 1 consisting of 50 kHz, 75 kHz and 100 kHz, and/or Group 2 consisting of 200 kHz, 500 kHz and 1 MHz. The range of the ultrasonic frequency can also be defined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the ultrasonic frequency can also be defined by the combination of any two of the values included in the first group above. The range of ultrasonic frequencies can also be specified by a combination of any two of the values included in the second group above. For example, 50 kHz or more and 1 MHz or less, 50 kHz or more and 500 kHz or less, 50 kHz or more and 200 kHz or less, 50 kHz or more and 100 kHz or less, 50 kHz or more and 75 kHz or less, 75 kHz or more and 1 MHz or less, or 75 kHz or more than 500 kHz? below 75 kHz and below 200 kHz, above 75 kHz and below 100 kHz, above 100 kHz and below 1 MHz, above 100 kHz and below 500 kHz, above 100 kHz and below 200 kHz, above 200 kHz and below 1 MHz, above 200 kHz and below 500 kHz , 500 kHz or more and 1 MHz or less.

The output density of the ultrasound may be, for example, 0.005 W/cm ² or more, 0.01 W/cm ² or more, or 0.027 W/cm ² or more. The output density of the ultrasound may be, for example, 0.054 W/cm ² or less, 0.081 W/cm ² or less, 0.085 W/cm ² or less, or 0.1 W/cm ² or less. The range of the output density of ultrasound can be the first group consisting of 0.005 W/cm ² , 0.01 W/cm ² and 0.027 W/cm ² , and/or 0.054 W/cm ² , 0.081 W/cm ² , 0.085 W The second group of regulations consisting of /cm ² and 0.1 W/cm ² . The range of the output density of ultrasound can also be defined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the output density of the ultrasound can also be specified by the combination of any two of the values included in the first group above. The range of the output density of the ultrasound can also be specified by the combination of any two of the values contained in the above-mentioned second group. For example, 0.005 W/cm ² or more, 0.1 W/cm ² or less, 0.005 W/cm ² or more, 0.085 W/cm ² or less, 0.005 W/cm ² or more, 0.081 W/cm ² or less, 0.005 W/cm ² or more and 0.054 W /cm ² or less, 0.005 W/cm ² or more, 0.027 W/cm ² or less, 0.005 W/cm ² or more, 0.01 W/cm ² or less, 0.01 W/cm ² or more, 0.1 W/cm ² or less, 0.01 W/cm ² or more 0.085 W/cm ² or less, 0.01 W/cm ² or more, 0.081 W/cm ² or less, 0.01 W/cm ² or more, 0.054 W/cm ² or less, 0.01 W/cm ² or more, 0.027 W/cm ² or less, 0.027 W/cm ² or more, 0.1 W/cm ² or less, 0.027 W/cm ² or more, 0.085 W/cm ² or less, 0.027 W/cm ² or more, 0.081 W/cm ² or less, 0.027 W/cm ² or more, 0.054 W/cm ² or less, 0.054 W / ^cm2 or more, 0.1 W/ ^cm2 or less, 0.054 W/ ^cm2 or more, 0.081 W/ ^cm2 or less, 0.054 W/ ^cm2 or more, 0.085 W/ ^cm2 or less, 0.081 W/ ^cm2 or more, 0.1 W/ ^cm2 or less, 0.085 W/cm ² or more and 0.1 W/cm ² or less.

The ultrasonic output density is calculated by dividing the ultrasonic output set in the ultrasonic control device 62 by the area of the ultrasonic vibrator.

As shown in FIG. 9 , the cleaning device 60 may include a cleaning tank 61 in which the processing liquid 76 is accommodated. The treatment liquid 76 is, for example, water. The cleaning solution 70 adhering to the mask 50 can be removed by immersing the mask 50 in the processing liquid 76 . As shown in FIG. 9 , the cleaning device 60 may include a drying device 77 for drying the mask 50 .

The washing step may also comprise a pretreatment step carried out before the impregnation step. The preprocessing step may also include, for example, a laser irradiation step of irradiating the vapor deposition material attached to the mask 50 with a laser. The cleaning step may not include the laser irradiation step. Even when the laser irradiation step is not performed, the mask 50 can be appropriately cleaned by removing the conductive material from the mask 50 by dissolution.

Next, an example of a method of manufacturing the organic device 100 will be described.

First, the substrate 110 on which the first electrodes 120 are formed is prepared. The first electrode 120 is formed by, for example, forming a conductive layer constituting the first electrode 120 on the substrate 110 by sputtering or the like, and then patterning the conductive layer by photolithography or the like. An insulating layer 160 between two adjacent first electrodes 120 may also be formed on the substrate 110 .

Next, the organic layer 130 including the first organic layer 130A, the second organic layer 130B, and the like is formed on the first electrode 120 . The first organic layer 130A may be formed by, for example, a vapor deposition method using a mask having through holes corresponding to the first organic layer 130A. For example, the first organic layer 130A can be formed by evaporating an organic material or the like on the first electrode 120 corresponding to the first organic layer 130A through a mask. The second organic layer 130B may also be formed by an evaporation method using a mask having through holes corresponding to the second organic layer 130B.

Next, a second electrode forming step of forming the second electrode 140 on the organic layer 130 is performed. For example, a step of forming the first layer 140A of the second electrode 140 by vapor deposition using the first mask 50 is performed. For example, the first layer 140A can be formed by vapor-depositing a conductive material such as a metal material on the organic layer 130 or the like through the first mask 50 . Then, the step of forming the second layer 140B of the second electrode 140 by the vapor deposition method using the second mask 50 may also be performed. For example, the second layer 140B can be formed by vapor-depositing a conductive material such as a metal material on the organic layer 130 or the like through the second mask 50 . In this way, as shown in FIG. 1 , the second electrode 140 including the first layer 140A and the second layer 140B can be formed. Thereby, the organic device 100 shown in FIG. 1 can be obtained.

Next, a cleaning step for cleaning the masks 50 such as the first mask 50 and the second mask 50 by the cleaning method using the cleaning liquid 70 described above may be performed. Thereby, the conductive material attached to the mask 50 can be removed. In addition, it is possible to suppress the occurrence of defects such as holes in the mask 50 during cleaning. Therefore, the mask 50 can be reused.

Various modifications can be made to the above-described one embodiment. Hereinafter, other embodiments will be described with reference to the drawings as necessary. In the following description and the drawings used in the following description, the same reference numerals as those used for the corresponding parts in the above-described first embodiment are used for parts that can be configured in the same way as in the above-described first embodiment. Repeated explanations are omitted. In addition, when it turns out that the effect obtained by the above-mentioned one embodiment can be acquired also in another embodiment, the description may be abbreviate|omitted.

FIG. 10 is a plan view showing an example of the mask 50 used when the second electrode 140 is formed. The plurality of through holes 53 may also be arranged along the first direction. Each of the through holes 53 may extend in a direction orthogonal to the first direction.

The cleaning solution may also contain potassium iodide, iodine and organic compounds. The organic compound contains one or more carboxyl groups. The organic compound may also include organic acids such as carboxylic acids, amino acids, and nitrocarboxylic acids. Organic compounds may also include salts of organic acids. Salts of organic acids may also contain ionic bonds. Ionic bonds can also be generated in carboxyl groups. Examples of salts of organic acids are ammonium salts, sodium salts, potassium salts, and the like. Ammonium salts contain the "-COONH ₄ " structure. The sodium salt contains the "-COONa" structure. Potassium salts contain the "-COOK" structure.

When the organic acid contains two carboxyl groups, an ionic bond may be generated in one carboxyl group, an ionic bond may be generated in two carboxyl groups, or an ionic bond may not be generated. The ionic bond generated in the two carboxyl groups may be the same or different. For example, the salt of an organic acid may contain 1 type of ammonium salt, sodium salt, and potassium salt, or may contain 2 types.

When the organic acid contains three carboxyl groups, an ionic bond may be generated in one carboxyl group, an ionic bond may be generated in two carboxyl groups, an ionic bond may be generated in three carboxyl groups, or an ionic bond may not be generated. The ionic bonds generated in three or more carboxyl groups may be the same or different. For example, the salt of an organic acid may contain 1 type of ammonium salt, sodium salt, and potassium salt, may contain 2 types, and may also contain 3 types.

Since the cleaning solution contains an organic compound or a salt of an organic acid, defects such as holes generated in the mask 50 during cleaning can be suppressed. One of the reasons is considered to be that the organic compound or salt of the organic acid present on the surface of the mask 50 or its periphery during cleaning functions as a protective material. However, the reason why the defect can be suppressed is not limited to the above-mentioned reason.

The concentration of the organic compound or organic acid salt in the cleaning solution may be, for example, 1.0 g/L or more, 3.0 g/L or more, or 10 g/L or more. The concentration of the organic compound or organic acid salt may be, for example, 50 g/L or less, 150 g/L or less, or 450 g/L or less. The concentration of organic compounds or salts of organic acids may range from Group 1 consisting of 1.0 g/L, 3.0 g/L and 10 g/L, and/or 50 g/L, 150 g/L and 450 g/L The second group of provisions formed by L. The range of the concentration of the organic compound or the salt of the organic acid may be defined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the concentration of the organic compound or the salt of the organic acid can also be defined by the combination of any two of the values included in the first group above. The range of the concentration of the salt of the organic compound or organic acid can also be specified by the combination of any two of the values contained in the above-mentioned second group. For example, it can be 1.0 g/L or more, 450 g/L or less, 1.0 g/L or more, 150 g/L or less, 1.0 g/L or more, 50 g/L or less, 1.0 g/L or more, 10 g/L or less, 1.0 g/L or more. 3.0 g/L or more, 3.0 g/L or more, 450 g/L or less, 3.0 g/L or more, 150 g/L or less, 3.0 g/L or more, 50 g/L or less, 3.0 g/L or more, 10 g/L or more Below, 10 g/L or more, 450 g/L or less, 10 g/L or more, 150 g/L or less, 10 g/L or more, 50 g/L or less, 50 g/L or more, 450 g/L or less, 50 g/L Above 150 g/L and below, above 150 g/L and below 450 g/L.

Examples of organic acids such as carboxylic acid, amino acid, nitrocarboxylic acid, etc. are formic acid, acetic acid, propionic acid, butyric acid, isobutyric acid, valeric acid, isovaleric acid, caproic acid, heptanoic acid, octanoic acid, nonanoic acid, decanoic acid acid, lauric acid, myristic acid, pentadecanoic acid, palmitic acid, pearl photonic acid, stearic acid, oleic acid, linoleic acid, hypolinoleic acid, tuberculous stearic acid, eicosic acid, arachidonic acid , Eicosapentaenoic acid, behenic acid, docosahexaenoic acid, sorbic acid, lactic acid, malic acid, glycolic acid, citric acid, tartaric acid, gluconic acid, benzoic acid, phthalic acid, isophthalic acid Formic acid, terephthalic acid, salicylic acid, gallic acid, mellitic acid, cinnamic acid, oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, fumaric acid, maleic acid acid, aconitic acid, pyruvic acid, oxalic acid, amino acid, glutamic acid, aspartic acid, arginine, lysine, histidine, glutamic acid, alanine, threonine, proline Amino acid, methionine, glycine, glycine glycine, glyceryl glycine, glycine glycine, alanine, glyceryl glycine , isoleucine, serine, threonine, cysteine, methionine, lysine, aspartic acid, glutamic acid, proline, phenylalanine, tyrosine, Tryptophan, Threonine, Cystine, Hydroxyproline, Hydroxylysine, Tetraiodothyronine (Thyroxine), Phosphoserine, Beta-Alanine, Sarcosine, Ornithine, Citrulline, Creatine, Gamma-aminobutyric acid, Crown Gall amino acid, Trimethylglycine, Theanine, Tricholomic acid, Kainic acid, Chondrobium Domoic acid, ibotenic acid, Acromelic acid, nitroacetic acid, o-nitrosobenzoic acid, m-nitrosobenzoic acid, p-nitrosobenzoic acid, o-nitroso benzoic acid, m-nitrobenzoic acid, p-nitrobenzoic acid, 2,4-dinitrobenzoic acid, 2,4,6-trinitrobenzoic acid, 3-nitrophthalic acid, 5-nitrobenzoic acid isophthalic acid, nitroterephthalic acid, 3-nitrophthalic anhydride, etc.

The amino acid may also be an alpha-amino acid. The α-amino acids other than glycine may include only the L-form, only the D-form, or both the L-form and the D-form. [Example]

Next, the embodiments of the present invention will be described more specifically with reference to examples, but the embodiments of the present invention are not limited to the descriptions of the following examples as long as they do not exceed the gist.

Example 1 A metal plate comprising an iron alloy containing 36% by weight of nickel was prepared. The thickness of the metal plate is 26 μm. Next, two samples for carrying out evaluation 1 and evaluation 2 were produced by cutting the metal plate. The two samples used for evaluation 1 and evaluation 2 are also referred to as a first sample and a second sample. The shape of the sample in plan view is a rectangle with a long side of 70 mm and a short side of 20 mm.

Prepare a cleaning solution containing potassium iodide and iodine. The material of the cleaning solution is shown below. • Stripping agent containing potassium iodide 450 g •Pure water 1000 ml • Iodine 20 g manufactured by Kanto Chemical Company As a release agent, Toplip ISG-S manufactured by Okuno Pharmaceutical Co., Ltd. was used. In the preparation step, first, pure water was added to Toplip ISG-S to prepare an aqueous solution. Next, a cleaning solution was prepared by adding iodine to the aqueous solution. Since potassium iodide and pure water undergo an endothermic reaction when mixed, the temperature of the aqueous solution decreases. When iodine is added to the aqueous solution at low temperature, the iodine is not easily dissolved in the aqueous solution. Taking this into consideration, iodine is added to the aqueous solution after the temperature of the aqueous solution has returned to the original temperature of pure water. The concentration of potassium iodide in the release agent was 90% by weight. The concentration of iodine in the cleaning solution is 20 g/L. The pH of the cleaning solution was 4.32.

A cleaning tank 61 in which the cleaning liquid is accommodated is prepared. The volume of cleaning solution is 50 ml. The temperature of the cleaning solution was 35°C. Next, the sample was immersed in the cleaning solution 70 for 60 minutes.

The surface of the sample taken out from the cleaning solution was rinsed with running water for 5 minutes, and after water droplets were removed with an air gun, evaluation 1 was carried out. In Evaluation 1, the surface of the sample was observed using an optical microscope. Pores over 10 μm in size were observed on the surface of the first sample and on the surface of the second sample. The observation conditions are as follows. Magnification: 50 times Observation range: 150.0 μm (vertical) × 180.0 μm (horizontal)

The number and size of pores over 10 μm in size were determined. The results are shown in the row of "Assessment 1" in Fig. 11 . In the row of "Judgment" of "Evaluation 1" in Fig. 11, "NG (abnormal)" means that pores with a size exceeding 10 μm were observed on the surface of the first sample or the surface of the second sample. "OK (normal)" means that no pores with a size exceeding 10 μm were observed on the surface of the first sample and the surface of the second sample. The row of "Number" of "Evaluation 1" indicates the number of holes with a size exceeding 10 μm. The row of "Size" of "Assessment 1" indicates the maximum size of the hole when viewed from above. The upper row of the line "Number" and "Size" indicates the evaluation result of the first sample. The lower part of the line "Number" and "Size" shows the evaluation results of the second sample. In the first sample of Example 1, the number of holes with a size exceeding 10 μm was 5, and the largest hole among the five holes had a size of 90 μm in plan view. In the second sample of Example 1, the number of holes with a size exceeding 10 μm was 3, and the largest hole among the three holes had a size of 70 μm in plan view.

In addition to Assessment 1, Assessment 2 was also implemented. In Evaluation 2, under the same conditions as in the case of Evaluation 1, the surface of the sample taken out from the cleaning solution was observed using an optical microscope. The results are shown in the row of "Evaluation 2" in Fig. 11 . In the row of "Evaluation 2", "OK" means that no cracks were observed on the surface and end surfaces of the first sample and the surface and end surfaces of the second sample. "NG" means that cracks were observed on the surface and end surfaces of the first sample and the surface and end surfaces of the second sample.

In Examples 2 to 6 , the temperature of the cleaning solution was changed, and evaluation 1 and evaluation 2 were carried out in the same manner as in the case of Example 1. The results are shown in FIG. 11 .

When the temperature of the cleaning solution was less than 25°C, specifically, when the temperature was 23°C or lower, no pores were observed. On the other hand, when the temperature of the cleaning solution was 25°C or higher, pores were observed. It is considered that by lowering the temperature, the cleaning speed is reduced, and thus the generation of pores can be suppressed.

Regarding Examples 4 to 6, evaluation 3 was implemented using the third sample and the fourth sample. In Evaluation 3, the cleaning characteristics of the cleaning method were evaluated.

Specifically, first, as in the case of Example 1, a metal plate containing an iron alloy containing 36% by weight of nickel was prepared. The thickness of the metal plate is 26 μm. Next, a sample was produced by cutting a metal plate. The shape of the sample in plan view is a rectangle with a long side of 70 mm and a short side of 20 mm. Next, a magnesium-silver alloy film was formed on the sample by an evaporation method. The above-mentioned third sample means a sample in which a magnesium-silver alloy film was formed. The thickness of the magnesium-silver alloy film is 500 nm. The ratio of the film thickness of magnesium to silver in the magnesium-silver alloy is 9:1. The ratio of the film thickness of magnesium and silver was detected by a crystal oscillator during vapor deposition. The above-mentioned fourth sample means a sample formed with a magnesium-silver alloy film having a ratio different from that of the third sample. The thickness of the magnesium-silver alloy film is 500 nm. The ratio of the film thickness of magnesium to silver in the magnesium-silver alloy is 1:9. The ratio of the film thickness of magnesium and silver was detected by a crystal oscillator during vapor deposition.

Next, the third sample and the fourth sample were washed for 10 minutes by the washing method of Examples 4 to 6, respectively. Then, the surfaces of the third sample and the fourth sample taken out from the cleaning solution were rinsed with running water for 5 minutes, and the water droplets were removed with an air gun, and then observed with an optical microscope. It was confirmed that the magnesium-silver alloy film was removed from the third sample and the fourth sample in Examples 4 to 5 by visual observation of the images observed using an optical microscope. Residues of the magnesium-silver alloy film were not confirmed. In the row of “Evaluation 3” in FIG. 11 , “OK” indicates the image observed by visual inspection using an optical microscope. As a result, it was confirmed that the magnesium-silver alloy film was removed from the third and fourth samples, and no magnesium-silver was confirmed. Residue of alloy film. In Example 6, when the cleaning time was 10 minutes, the magnesium-silver alloy film was not completely removed from the third sample and the fourth sample. When the cleaning time was 30 minutes, the magnesium-silver alloy film was removed from the third sample and the fourth sample, and the residue of the magnesium-silver alloy film was not confirmed.

In Example 7 , evaluation 1 and evaluation 2 were carried out in the same manner as in the case of Example 4. Specifically, a cleaning tank 61 containing the same cleaning liquid as in the case of Example 4 was prepared. Then, using an ultrasonic transducer, ultrasonic waves having a frequency of 1 MHz and an output of 50 W were applied to the cleaning solution. The area of the ultrasonic vibrator is 370×250 mm ² . The output density of the ultrasound was 0.054 W/cm ² . Next, under the same conditions as in the case of Example 4, the sample was immersed in the cleaning solution.

Under the same conditions as in the case of Example 1, the surface of the sample taken out from the cleaning solution was observed using an optical microscope. No pores over 10 μm in size were observed on the surface of the sample. It is considered that by setting the high frequency, the damage to the sample due to cavitation is reduced, and thus the generation of pores can be suppressed.

Moreover, similarly to the case of Example 4, evaluation 3 was implemented. Specifically, the third sample and the fourth sample were washed for 10 minutes by the washing method of Example 7, respectively. The surfaces of the third and fourth samples taken out from the cleaning solution were observed under the same conditions as in the case of Example 4. It was confirmed that the magnesium-silver alloy film was removed from the third sample and the fourth sample. Residues of the magnesium-silver alloy film were not confirmed.

In Examples 8 to 13 , the frequency and output of ultrasonic waves were changed, and evaluation 1 and evaluation 2 were carried out in the same manner as in the case of Example 4. The results are shown in FIG. 11 . As shown in the row of "Evaluation 2" in Fig. 11, in Examples 10 and 11, cracks were observed in the samples. The cracks are thought to be caused by ultrasonic waves. In the cleaning methods of Examples 8, 9, and 13, any of the evaluations 1 and 2 were OK. It is considered that by setting a high frequency and a low output, the damage to the sample due to cavitation is reduced, and thus the generation of pores can be suppressed.

Moreover, evaluation 3 was implemented similarly to the case of Example 4. Specifically, the third sample and the fourth sample were washed for 10 minutes by the washing methods of Examples 8, 9, and 13, respectively. The surfaces of the third and fourth samples taken out from the cleaning solution were observed under the same conditions as in the case of Example 4. It was confirmed that the magnesium-silver alloy film was removed from the third sample and the fourth sample. Residues of the magnesium-silver alloy film were not confirmed.

As can be seen from Examples 7 to 11, the frequency of the ultrasonic waves applied to the cleaning solution is preferably 50 kHz or more, and more preferably 100 kHz or more. As can be seen from Examples 9, 12, and 13, the output density of the ultrasonic waves applied to the cleaning solution is preferably 0.1 W/cm ² or less, and more preferably 0.085 W/cm ² or less.

In Examples 14 to 18 , at least one of the concentration of iodine in the cleaning solution and the concentration of the release agent was changed, and evaluation 1 and evaluation 2 were carried out in the same manner as in the case of Example 9. The results are shown in FIG. 11 . In the cleaning methods of Examples 15 to 18, evaluations 1 and 2 were all OK. As can be seen from Examples 9, 14 and 15, the concentration of iodine in the cleaning solution is preferably less than 40 g/L, more preferably 20 g/L or less. As can be seen from Examples 14 to 18, the concentration of iodine in the cleaning solution may be 10 g/L or less, 8 g/L or less, or 6 g/L or less. The concentration of the stripping agent in the cleaning solution may also be less than 300 g/L. It is considered that by reducing the concentration of the release agent or the iodine concentration in the cleaning solution, the cleaning efficiency is lowered, and thus the generation of pores can be suppressed. As can be seen from Examples 13 to 18, when the pH of the cleaning solution is 4.0 or more, evaluation 2 is OK. When the pH of the cleaning solution was 4.24, the evaluation 1 was NG, and when the pH of the cleaning solution was 4.25 or more, the evaluation 1 was also OK. The pH of the cleaning solution is preferably 4.0 or more, more preferably 4.25 or more.

Moreover, evaluation 3 was implemented similarly to the case of Example 4. Specifically, the third sample and the fourth sample were washed for 10 minutes by the washing method of Examples 15 to 18, respectively. The surfaces of the third and fourth samples taken out from the cleaning solution were observed under the same conditions as in the case of Example 4. It was confirmed that the magnesium-silver alloy film was removed from the third sample and the fourth sample. Residues of the magnesium-silver alloy film were not confirmed.

Example 19 Evaluation 1 and Evaluation 2 were carried out in the same manner as in Example 9 except that 450 g of potassium iodide was used as the release agent. The results are shown in FIG. 11 . As can be seen from Examples 9 and 14 to 19, the pH of the cleaning solution is preferably 5.00 or less.

In Examples 20 to 23 , the temperature of the cleaning solution was changed, and evaluation 1 and evaluation 2 were carried out in the same manner as in the case of Example 9. As shown in FIG. 11 , in Examples 20 to 23, no holes and cracks were observed. In Examples 20 to 23, the temperature of the cleaning solution was lower than that in the case of Example 9, so that defects such as holes and cracks were less likely to occur. Therefore, the evaluation results of Examples 20 to 23 are considered appropriate.

From the evaluation results of Examples 7 to 11, it can be seen that the higher the ultrasonic frequency is, the less likely it is that defects such as holes and cracks are generated. Therefore, although not shown in FIG. 11, it is assumed that the temperature of the cleaning solution is set to 10°C or more and 20°C or less, and the frequency of the ultrasonic wave is set to 200 kHz or more and 1000 kHz or less, as in Examples 20 to 23. , holes and cracks are not observed.

When ultrasonic waves are applied to the cleaning solution, the cleaning performance is improved, but defects such as holes and cracks are easily generated. Therefore, although not shown in FIG. 11, it is expected that holes and cracks will not be observed when the temperature of the cleaning solution is set to 10°C as in Example 23, and no ultrasonic waves are applied to the cleaning solution.

Moreover, evaluation 3 was implemented similarly to the case of Example 9. The results are shown in FIG. 11 .

In Example 24 , the temperature of the cleaning solution was changed to 18° C., and the evaluations 1 to 3 were carried out in the same manner as in the case of Example 1. The results are shown in FIG. 11 .

In Example 25 , the concentration of iodine in the cleaning solution was changed to 10 g/L, and evaluations 1 to 3 were carried out in the same manner as in the case of Example 24. The results are shown in FIG. 11 . Regarding evaluation 3, when the cleaning time was 10 minutes, the magnesium-silver alloy film was not completely removed from the third sample and the fourth sample. When the cleaning time was 30 minutes, the magnesium-silver alloy film was removed from the third sample and the fourth sample, and the residue of the magnesium-silver alloy film was not confirmed. It is expected that when the temperature of the cleaning solution is 18°C, the same results as in Example 24 and Example 25 are obtained within the range of iodine concentration of 10 g/L or more and 20 g/L or less.

Example 26 The iodine concentration of the cleaning solution was changed to 10 g/L, and evaluations 1 to 3 were carried out in the same manner as in the case of Example 6. The results are shown in FIG. 11 . Regarding evaluation 3, when the cleaning time was 10 minutes, the magnesium-silver alloy film was not completely removed from the third sample and the fourth sample. When the cleaning time was 30 minutes, the magnesium-silver alloy film was removed from the third sample and the fourth sample, and the residue of the magnesium-silver alloy film was not confirmed. It is expected that when the temperature of the cleaning solution is 15°C, the same results as in Example 6 and Example 26 are obtained within the range of iodine concentration of 10 g/L or more and 20 g/L or less.

4: Cooling plate 5: Magnet 6: Evaporation source 7: Evaporation material 8: Heater 10: Evaporation device 40: Masking device 41: Frame 42: Opening 50:Mask 50a: 1st end 50b: End 2 51: sheet metal 51a: Side 1 51b: Side 2 53: Through hole 54: Nets 55: Surrounding area 56: Defect 60: Cleaning device 61: Wash tank 62: Ultrasonic control device 63: Temperature control device 70: cleaning liquid 76: Treatment liquid 77: Drying device 100: Organic Installations 110: Substrate 111: Side 1 112: Side 2 115: Components 115A: 1st element 115B: 2nd element 120: 1st electrode 130: organic layer 130A: 1st organic layer 130B: 2nd organic layer 140: 2nd electrode 140A: Tier 1 140B: Tier 2 145: Electrode overlap area 160: Insulation layer 411: 1st side area 412: 2nd side area 501: End 1 502: End 2 503: End 3 504: End 4 531: 1st recess 532: 2nd recess 533: Connector 534: Penetration

FIG. 1 is a cross-sectional view showing an example of an organic device according to an embodiment of the present invention. FIG. 2 is a diagram showing an example of a vapor deposition apparatus including a mask device. FIG. 3 is a plan view showing an example of a mask device. FIG. 4 is a plan view showing an example of a mask. FIG. 5 is a plan view showing an example of a mask. FIG. 6 is a diagram showing an example of the cross-sectional structure of the mask. FIG. 7 is a cross-sectional view showing an example of a mask to which a metal material is attached. FIG. 8 is a cross-sectional view showing an example of defects caused by the mask in the cleaning step. FIG. 9 is a diagram showing an example of a cleaning apparatus. FIG. 10 is a plan view showing an example of a mask. FIG. 11 is a graph showing the evaluation results of the cleaning methods of Examples 1 to 26. FIG.

50:Mask

60: Cleaning device

61: Wash tank

62: Ultrasonic control device

63: Temperature control device

70: cleaning liquid

76: Treatment liquid

77: Drying device

Claims (15)

A cleaning method comprising cleaning a mask, and including a cleaning step of cleaning the mask by contacting the cleaning solution with the mask, The above cleaning solution contains potassium iodide and iodine, The temperature of the above cleaning solution did not reach 25°C. The cleaning method of claim 1, wherein the cleaning step includes a dipping step of immersing the mask in the cleaning solution contained in the cleaning tank. The cleaning method of claim 2, wherein the cleaning step includes an ultrasonic step of applying ultrasonic waves to the cleaning solution. The cleaning method of claim 3, wherein the frequency of the ultrasonic wave is above 100 kHz. The cleaning method of claim 4, wherein the frequency of the ultrasonic wave is 1 MHz or less. The cleaning method according to any one of claims 1 to 5, wherein the concentration of the iodine in the cleaning solution is 20 g/L or less. The cleaning method according to any one of claims 1 to 5, wherein the pH of the cleaning solution is 5.00 or less. The cleaning method according to any one of claims 1 to 5, wherein the mask comprises an iron alloy containing nickel. The cleaning method according to any one of claims 1 to 5, wherein the thickness of the mask is 100 μm or less. The cleaning method according to any one of claims 1 to 5, wherein the cleaning step is to remove the metal material attached to the mask. The cleaning method of claim 10, wherein the metal material comprises a magnesium-silver alloy. A cleaning solution for cleaning the mask, and Contains potassium iodide and iodine. A cleaning device that cleans the mask, and Equipped with at least one cleaning tank for storing cleaning liquid, The above-mentioned cleaning solution contains potassium iodide and iodine. The cleaning apparatus of claim 13, wherein the at least one cleaning tank includes a first cleaning tank that accommodates the cleaning liquid, and a second cleaning tank that accommodates the cleaning liquid, The said cleaning apparatus is equipped with the conveyance mechanism which conveys the said mask from the said 1st cleaning tank to the said 2nd cleaning tank. A manufacturing method, which is a manufacturing method of an organic device, and comprises: The second electrode forming step, which is formed on the organic layer on the first electrode on the substrate, using two or more masks in sequence, and forming the second electrode by vapor deposition; and The cleaning step is to clean the mask by bringing the cleaning solution as claimed in claim 12 into contact with the mask.

Images