JP7008291B1 - Mask cleaning method, cleaning liquid, cleaning equipment, and manufacturing method of organic devices - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for cleaning a mask to which a conductive material is attached in order to reuse a mask used in a method for forming an electrode. A cleaning step of cleaning the mask 50 by contacting the cleaning liquid 70 is provided. The cleaning liquid 70 contains potassium iodide and iodine. The temperature of the cleaning liquid 70 is less than 25 ° C. [Selection diagram] FIG. 9

Description

The embodiments of the present disclosure relate to a method of cleaning a mask, a cleaning liquid, a cleaning device, and a method of manufacturing an organic device.

In recent years, in electronic devices such as smartphones and tablet PCs, high-definition display devices have been demanded by the market. The display device has an element density of, for example, 400 ppi or more or 800 ppi or more.

Organic EL display devices are attracting attention because they have good responsiveness and / and high contrast. As a method for forming an element of an organic EL display device, a method of adhering a material constituting the element to a substrate by thin film deposition is known. For example, first, a substrate in which an anode is formed with a pattern corresponding to an element is prepared. Subsequently, the organic material is adhered onto the anode through the through hole of the mask to form an organic layer on the anode. Subsequently, a cathode is formed on the organic layer. The organic material adhering to the mask is removed by the cleaning device. The washed mask is reused.

Japanese Unexamined Patent Publication No. 2006-100263

As a method of forming an electrode such as a cathode, a method of adhering a conductive material to an organic layer through a through hole of a mask can be considered. In order to reuse the mask, it is necessary to establish a method for cleaning the mask to which the conductive material is attached.

The cleaning method for cleaning the mask according to the embodiment of the present disclosure is
A cleaning step of cleaning the mask by bringing the cleaning liquid into contact with the mask is provided.
The cleaning solution contains potassium iodide and iodine, and contains
The temperature of the cleaning liquid is less than 25 ° C.

According to one embodiment of the present disclosure, a mask to which a conductive material is attached can be cleaned.

It is sectional drawing which shows an example of the organic device by one Embodiment of this disclosure. It is a figure which shows an example of the vapor deposition apparatus provided with the mask apparatus. It is a top view which shows an example of a mask device. It is a top view which shows an example of a mask. It is a top view which shows an example of a mask. It is a figure which shows an example of the cross-sectional structure of a mask. It is sectional drawing which shows an example of the mask which attached the metal material. It is sectional drawing which shows an example of the defect which occurs in a mask in a cleaning process. It is a figure which shows an example of a cleaning apparatus. It is a top view which shows an example of a mask. It is a figure which shows the evaluation result of the cleaning method of Example 1 to Example 26.

In the present specification and the present drawings, unless otherwise specified, the term "substrate", "base material", "board", "sheet", "film", etc., means a substance that is the basis of a certain composition. , Not distinguished from each other based solely on the difference in designation.

Unless otherwise specified, the present specification and the present drawings specify shapes, geometric conditions, and their degrees, for example, terms such as "parallel" and "orthogonal", length and angle values, and the like. Is interpreted to include the range in which similar functions can be expected without being bound by the strict meaning.

In the present specification and the present drawings, unless otherwise specified, a configuration such as a member or a region may be "above" or "below" another configuration such as another member or region. The terms "upper" and "lower", or "upward" and "downward" include cases where one configuration is in direct contact with another. Further, it also includes the case where another configuration is included between one configuration and another configuration, that is, the case where they are indirectly in contact with each other. Further, unless otherwise specified, the terms "upper", "upper", "upper", or "lower", "lower", and "lower" may be reversed in the vertical direction.

Unless otherwise specified, the same parts or parts having similar functions may be designated by the same reference numerals or similar reference numerals, and the repeated description thereof may be omitted in the present specification and the present drawings. Further, the dimensional ratio of the drawing may differ from the actual ratio for convenience of explanation, or a part of the configuration may be omitted from the drawing.

Unless otherwise specified in the present specification and the present drawings, they may be combined with other embodiments and modifications as long as they do not cause inconsistency. Further, other embodiments may be combined with each other, or other embodiments and modifications may be combined within a range that does not cause a contradiction. Further, the modified examples may be combined as long as there is no contradiction.

Unless otherwise specified in the present specification and the present drawings, when a plurality of steps are disclosed with respect to a method such as a manufacturing method, other steps not disclosed are carried out between the disclosed steps. You may. In addition, the order of the disclosed steps is arbitrary as long as there is no contradiction.

Unless otherwise specified in the present specification and the present drawings, the numerical range represented by the symbol "-" includes numerical values placed before and after the symbol "-". For example, the numerical range defined by the expression "34 to 38% by mass" is the same as the numerical range defined by the expression "34% by mass or more and 38% by mass or less".

In one embodiment of the present specification, an example in which a mask is used for forming an electrode on a substrate in manufacturing an organic EL display device will be described. However, the use of the mask is not particularly limited, and the present embodiment can be applied to masks used for various uses. For example, the mask of the present embodiment may be used to form an electrode of a device for displaying or projecting an image or video for expressing virtual reality so-called VR or augmented reality so-called AR. Further, the mask of the present embodiment may be used to form an electrode of a display device other than the organic EL display device, such as an electrode of the liquid crystal display device. Further, the mask of the present embodiment may be used to form an electrode of an organic device other than the display device, such as an electrode of a pressure sensor.

The first aspect of the present disclosure is a cleaning method for cleaning a mask.
A cleaning step of cleaning the mask by bringing the cleaning liquid into contact with the mask is provided.
The cleaning solution contains potassium iodide and iodine, and contains
The cleaning method in which the temperature of the cleaning liquid is less than 25 ° C.

The second aspect of the present disclosure is the cleaning method according to the first aspect described above.
The cleaning step may include a dipping step of immersing the mask in the cleaning liquid contained in the cleaning tank.

A third aspect of the present disclosure is the cleaning method according to the second aspect described above.
The cleaning step may include an ultrasonic step of applying ultrasonic waves to the cleaning liquid.

A fourth aspect of the present disclosure is the cleaning method according to the third aspect described above.
The frequency of the ultrasonic wave may be 100 kHz or more.

A fifth aspect of the present disclosure is the cleaning method according to the fourth aspect described above.
The frequency of the ultrasonic wave may be 1 MHz or less.

A sixth aspect of the present disclosure is the cleaning method according to each of the above-mentioned first aspect to the above-mentioned fifth aspect.
The concentration of the iodine in the cleaning solution may be 20 g / L or less.

A seventh aspect of the present disclosure is the cleaning method according to each of the above-mentioned first aspect to the above-mentioned sixth aspect.
The pH of the cleaning solution may be 5.00 or less.

The eighth aspect of the present disclosure is the cleaning method according to each of the above-mentioned first aspect to the above-mentioned seventh aspect.
The mask may contain an iron alloy containing nickel.

A ninth aspect of the present disclosure is the cleaning method according to each of the above-mentioned first aspect to the above-mentioned eighth aspect.
The thickness of the mask may be 100 μm or less.

A tenth aspect of the present disclosure is the cleaning method according to each of the above-mentioned first aspect to the above-mentioned ninth aspect.
The cleaning step may remove the metallic material adhering to the mask.

The eleventh aspect of the present disclosure is the cleaning method according to the tenth aspect described above.
The metal material may contain magnesium silver.

A twelfth aspect of the present disclosure is a cleaning solution used for cleaning a mask.
A cleaning solution containing potassium iodide and iodine.

A thirteenth aspect of the present disclosure is a cleaning device for cleaning a mask.
Equipped with at least one cleaning tank for accommodating the cleaning liquid,
The cleaning liquid is a cleaning device containing potassium iodide and iodine.

A fourteenth aspect of the present disclosure is the cleaning device according to the thirteenth aspect described above.
The at least one cleaning tank includes a first cleaning tank containing the cleaning liquid and a second cleaning tank containing the cleaning liquid.
The cleaning device may include a transport mechanism for transporting the mask from the first cleaning tank to the second cleaning tank.

A fifteenth aspect of the present disclosure is a method for manufacturing an organic device.
A second electrode forming step of forming a second electrode by a vapor deposition method using two or more masks in order on an organic layer on the first electrode on a substrate.
A manufacturing method comprising a cleaning step of cleaning the mask by bringing the cleaning liquid according to the twelfth aspect into contact with the mask.

An embodiment of the present disclosure will be described in detail with reference to the drawings. It should be noted that the embodiments shown below are examples of the embodiments of the present disclosure, and the present disclosure is not limited to these embodiments.

First, the organic device 100 having an electrode formed by using a mask will be described. FIG. 1 is a cross-sectional view showing an example of the organic device 100.

The organic device 100 includes a substrate 110 and a plurality of elements 115 arranged along the in-plane direction of the substrate 110. The element 115 is, for example, a pixel. The substrate 110 may include two or more types of elements 115. For example, the substrate 110 may include a first element 115A and a second element 115B. Although not shown, the substrate 110 may include a third element. The first element 115A, the second element 115B, and the third element are, for example, red pixels, blue pixels, and green pixels.

The element 115 may have a first electrode 120, an organic layer 130 located on the first electrode 120, and a second electrode 140 located on the organic layer 130.

The organic device 100 may include an insulating layer 160 located between two adjacent first electrodes 120 in a plan view. The insulating layer 160 contains, for example, polyimide. The insulating layer 160 may overlap the end of the first electrode 120.

The organic device 100 may be of the active matrix type. For example, although not shown, the organic device 100 may include a switch electrically connected to each of the plurality of elements 115. The switch is, for example, a transistor. The switch can control the ON / OFF of the voltage or current with respect to the corresponding element 115.

The substrate 110 may be a plate-shaped member having an insulating property. The substrate 110 preferably has transparency to transmit light. As the material of the substrate 110, for example, a rigid material having no flexibility such as quartz glass, Pyrex (registered trademark) glass, or a synthetic quartz plate, or a flexible material such as a resin film, an optical resin plate, or thin glass can be used. A flexible material or the like can be used. Further, the base material may be a laminate having a barrier layer on one side or both sides of the resin film.

The element 115 realizes some function by applying a voltage between the first electrode 120 and the second electrode 140, or by passing a current between the first electrode 120 and the second electrode 140. It is configured to do. For example, when the element 115 is a pixel of an organic EL display device, the element 115 can emit light constituting an image.

The first electrode 120 contains a material having conductivity. For example, the first electrode 120 includes a metal, a conductive metal oxide, and other conductive inorganic materials. The first electrode 120 may contain a transparent and conductive metal oxide such as indium tin oxide (ITO) and indium zinc oxide (IZO).

The organic layer 130 contains an organic material. When the organic layer 130 is energized, the organic layer 130 can exert some function. Energization means that a voltage is applied to the organic layer 130 or a current flows through the organic layer 130. As the organic layer 130, a light emitting layer that emits light by energization, a layer whose light transmittance and refractive index change by energization, and the like can be used. The organic layer 130 may contain an organic semiconductor material.

As shown in FIG. 1, the organic layer 130 may include a first organic layer 130A and a second organic layer 130B. The first organic layer 130A is included in the first element 115A. The second organic layer 130B is included in the second element 115B. Although not shown, the organic layer 130 may include a third organic layer contained in the third element. The first organic layer 130A, the second organic layer 130B, and the third organic layer are, for example, a red light emitting layer, a blue light emitting layer, and a green light emitting layer.

When a voltage is applied between the first electrode 120 and the second electrode 140, the organic layer 130 located between them is driven. When the organic layer 130 is a light emitting layer, light is emitted from the organic layer 130, and the light is taken out from the second electrode 140 side or the first electrode 120 side.

The organic layer 130 may further include a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, a charge generation layer, and the like.

The second electrode 140 contains a conductive material such as metal. The second electrode 140 is formed on the organic layer 130 by a thin-film deposition method using a mask. Materials constituting the second electrode 140 include platinum, gold, silver, copper, iron, tin, chromium, aluminum, indium, lithium, sodium, potassium, calcium, magnesium, chromium, indium tin oxide (ITO), and indium. Zinc oxide (IZO), carbon and the like can be used. These materials may be used alone or in combination of two or more. When two or more types are used, layers made of each material may be laminated. Further, an alloy containing two or more kinds of materials may be used. For example, a magnesium alloy such as MgAg and an aluminum alloy such as AlLi, AlCa and AlMg can be used. MgAg is also referred to as magnesium silver. Magnesium silver is preferably used as a material for the second electrode 140. Alloys of alkali metals and alkaline earth metals may be used. For example, lithium fluoride, sodium fluoride, potassium fluoride and the like may be used.

The weight ratio of silver in magnesium silver may be, for example, 5% or more, 50% or more, or 90% or more. The weight ratio of silver may be, for example, 95% or less, 97% or less, or 99% or less. The range of silver weight ratios may be defined by a first group consisting of 5%, 50% and 90% and / or a second group consisting of 95%, 97% and 99%. The range of the weight ratio of silver may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the weight ratio of silver may be determined by any combination of any two of the values included in the first group described above. The range of the weight ratio of silver may be determined by any combination of any two of the values included in the second group described above. For example, it may be 5% or more and 99% or less, 5% or more and 97% or less, 5% or more and 95% or less, 5% or more and 90% or less, 5% or more and 50% or less, and 50% or more. It may be 99% or less, 50% or more and 97% or less, 50% or more and 95% or less, 50% or more and 90% or less, 90% or more and 99% or less, 90% or more and 97% or less. , 90% or more and 95% or less, 95% or more and 99% or less, 95% or more and 97% or less, 97% or more and 99% or less.

As shown in FIG. 1, the second electrode 140 may include the first layer 140A and the second layer 140B. The first layer 140A is a layer formed by a thin-film deposition step using the first mask. The second layer 140B is a layer formed by a thin-film deposition step using a second mask. As described above, in the present embodiment, the second electrode 140 may be formed by using two or more masks. This increases the degree of freedom of the pattern of the second electrode 140 in a plan view. For example, the organic device 100 can include a region in which the second electrode 140 does not exist in a plan view. The region in which the second electrode 140 does not exist can have a higher transmittance than the region in which the second electrode 140 exists.

As shown in FIG. 1, the end portion of the first layer 140A and the end portion of the second layer 140B may partially overlap. As a result, the first layer 140A and the second layer 140B can be electrically connected.

Although not shown, the second electrode 140 may include other layers such as the third layer. Other layers such as the third layer may be electrically connected to the first layer 140A and the second layer 140B.

In the following description, when the configuration common to the first layer 140A, the second layer 140B, the third layer, and the like among the configurations of the second electrode 140 is described, the term “second electrode 140” and the reference numeral are used. Use.

The thickness of the second electrode 140 may be, for example, 5 nm or more, 20 nm or more, 50 nm or more, or 100 nm or more. The thickness of the first layer 140A may be, for example, 200 nm or less, 500 nm or less, 1 μm or less, or 100 μm or less. The thickness range of the second electrode 140 may be defined by a first group consisting of 5 nm, 20 nm, 50 nm and 100 nm and / or a second group consisting of 200 nm, 500 nm, 1 μm and 100 μm. The thickness range of the second electrode 140 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. good. The range of the thickness of the second electrode 140 may be determined by any combination of any two of the values included in the first group described above. The range of the thickness of the second electrode 140 may be determined by any combination of any two of the values included in the second group described above. For example, it may be 5 nm or more and 100 μm or less, 5 nm or more and 1 μm or less, 5 nm or more and 500 nm or less, 5 nm or more and 200 nm or less, 5 nm or more and 100 nm or less, 5 nm or more and 50 nm or less, or 5 nm or more and 20 nm or less. , 20 nm or more and 100 μm or less, 20 nm or more and 1 μm or less, 20 nm or more and 500 nm or less, 20 nm or more and 200 nm or less, 20 nm or more and 100 nm or less, 20 nm or more and 50 nm or less, 50 nm or more and 100 μm or less. It may be 50 nm or more and 1 μm or less, 50 nm or more and 500 nm or less, 50 nm or more and 200 nm or less, 50 nm or more and 100 nm or less, 100 nm or more and 100 μm or less, 100 nm or more and 1 μm or less, 100 nm or more and 500 nm or less, 100 nm. It may be 200 nm or less, 200 nm or more and 100 μm or less, 200 nm or more and 1 μm or less, 200 nm or more and 500 nm or less, 500 nm or more and 100 μm or less, 500 nm or more and 1 μm or less, or 1 μm or more and 100 μm or less.

Next, a method of forming the second electrode 140 by a thin-film deposition method will be described. FIG. 2 is a diagram showing a thin-film deposition apparatus 10. The thin-film deposition apparatus 10 carries out a thin-film deposition process for depositing a vapor-deposited material on an object.

As shown in FIG. 2, the vapor deposition apparatus 10 may include a vapor deposition source 6, a heater 8, and a mask apparatus 40 inside. Further, the vapor deposition apparatus 10 may further include an exhaust means for creating a vacuum atmosphere inside the vapor deposition apparatus 10. The vapor deposition source 6 is, for example, a crucible and accommodates a vapor deposition material 7 such as a metal material. The heater 8 heats the vapor deposition source 6 to evaporate the vapor deposition material 7 in a vacuum atmosphere. The mask device 40 is arranged so as to face the crucible 6.

As shown in FIG. 2, the mask device 40 may include at least one mask 50 and a frame 41 that supports the mask 50. The frame 41 may include an opening 42. The mask 50 may be fixed to the frame 41 so as to cross the opening 42 in a plan view. Further, the frame 41 may support the mask 50 in a state of being pulled in the plane direction so as to prevent the mask 50 from bending.

As shown in FIG. 2, the mask device 40 is arranged in the vapor deposition device 10 so that the mask 50 faces the substrate 110 to which the vapor deposition material 7 is adhered. The mask 50 includes a plurality of through holes 53 through which the vapor deposition material 7 flying from the vapor deposition source 6 is passed. In the following description, among the surfaces of the mask 50, the surface located on the side of the substrate 110 is referred to as the first surface 51a, and the surface located on the opposite side of the first surface 51a is referred to as the second surface 51b.

As shown in FIG. 2, the vapor deposition apparatus 10 may include a cooling plate 4 arranged on the second surface 112 side of the substrate 110. The cooling plate 4 may have a flow path for circulating the refrigerant inside the cooling plate 4. The cooling plate 4 can prevent the temperature of the substrate 110 from rising during the vapor deposition process.

As shown in FIG. 2, the thin-film deposition apparatus 10 may include a magnet 5 arranged on the second surface 112 side of the substrate 110. The magnet 5 may be arranged on the surface of the cooling plate 4 opposite to the mask device 40. The magnet 5 can attract the mask 50 of the mask device 40 toward the substrate 110 by the magnetic force. As a result, the gap between the mask 50 and the substrate 110 can be reduced or eliminated. This makes it possible to suppress the generation of shadows in the vapor deposition process. In the present application, the shadow is a phenomenon in which the vapor-deposited material 7 enters the gap between the mask 50 and the substrate 110, which causes the thickness of the second electrode 140 to become non-uniform.

FIG. 3 is a plan view showing an example of the mask device 40. The shape of the mask 50 may be a rectangle having a length direction and a width direction orthogonal to the length direction. The size of the mask 50 in the length direction is smaller than the size of the mask 50 in the width direction. In the following description, the length direction is also referred to as a mask first direction, and the width direction is also referred to as a mask second direction. The mask 50 may include a first end 501, a second end 502, a third end 503 and a fourth end 504. The first end 501 and the second end 502 are the ends of the mask 50 in the mask first direction D1. The first end 501 and the second end 502 may include a portion extending in the second direction D2 of the mask. The third end 503 and the fourth end 504 are the ends of the mask 50 in the second direction D2 of the mask. The third end 503 and the fourth end 504 may include a portion extending in the first direction D1 of the mask.

The mask device 40 may include a plurality of masks 50 arranged in the second direction D2 of the mask. The mask 50 may be fixed to the frame 41 at both ends of the mask first direction D1 by welding, for example. Both ends of the mask 50 may be fixed to the frame 41 in a state where tension is applied to the mask 50 in the mask first direction D1. After the mask 50 is fixed to the frame 41, the frame 41 may apply tension to the mask 50 in the mask first direction D1.

In FIG. 3, the reference numeral L represents the dimension of the mask 50 in the first direction D1 of the mask, that is, the length of the mask 50. The length L may be, for example, 150 mm or more, 300 mm or more, or 600 mm or more. The length L may be, for example, 1000 mm or less, 1700 mm or less, or 2500 mm or less. The range of length L may be defined by a first group consisting of 150 mm, 300 mm and 600 mm and / or a second group consisting of 1000 mm, 1700 mm and 2500 mm. The range of length L may be defined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of length L may be defined by any combination of any two of the values included in the first group described above. The range of length L may be defined by any combination of any two of the values included in the second group described above. For example, it may be 150 mm or more and 2500 mm or less, 150 mm or more and 1700 mm or less, 150 mm or more and 1000 mm or less, 150 mm or more and 600 mm or less, 150 mm or more and 300 mm or less, 300 mm or more and 2500 mm or less, or 300 mm or more and 1700 mm or less. , 300 mm or more and 1000 mm or less, 300 mm or more and 600 mm or less, 600 mm or more and 2500 mm or less, 600 mm or more and 1700 mm or less, 600 mm or more and 1000 mm or less, 1000 mm or more and 2500 mm or less, 1000 mm or more and 1700 mm or less. It may be 1700 mm or more and 2500 mm or less.

In FIG. 3, the reference numeral W represents the dimension of the mask 50 in the second direction D2 of the mask, that is, the width of the mask 50. The width W is smaller than the length L. The L / W, which is the ratio of the length L to the width W, may be, for example, 2 or more, 5 or more, or 10 or more. The L / W may be, for example, 20 or less, 50 or less, or 100 or less. The range of L / W may be defined by a first group consisting of 2, 5 and 10 and / or a second group consisting of 20, 50 and 100. The range of L / W may be defined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of L / W may be defined by any combination of any two of the values included in the first group described above. The range of L / W may be defined by any combination of any two of the values included in the second group described above. For example, it may be 2 or more and 100 or less, 2 or more and 50 or less, 2 or more and 20 or less, 2 or more and 10 or less, 2 or more and 5 or less, 5 or more and 100 or less, and 5 or more and 50 or less. 5, 5 or more and 20 or less, 5 or more and 10 or less, 10 or more and 100 or less, 10 or more and 50 or less, 10 or more and 20 or less, 20 or more and 100 or less, 20 or more and 50 or less, It may be 50 or more and 100 or less.

When cleaning the mask 50 while applying ultrasonic waves to the cleaning liquid as described later, a wave of natural vibration may be generated in the mask 50. Since the length L is larger than the width W, the natural vibration wave is likely to occur in the direction of the length L, that is, in the mask first direction D1. Since the direction of the wave of the natural vibration can be easily specified, it is easy to take measures when the damage to the mask 50 due to cavitation and the natural vibration have a correlation.

The frame 41 may have a rectangular contour. For example, the frame 41 may include a pair of first side regions 411 extending in the first direction D1 of the mask and a pair of second side regions 412 extending in the second direction D2 of the mask. The end portion of the mask 50 in the mask first direction D1 may be fixed to the second side region 412. The second side area 412 may be longer than the first side area 411. The opening 42 of the frame 41 may be surrounded by a pair of first side regions 411 and a pair of second side regions 412.

FIG. 4 is a plan view showing an example of the mask 50. As shown in FIGS. 3 and 4, the mask 50 may include a first end 50a, a second end 50b, a cell 54 and a peripheral region 55. The cell 54 includes a group of through holes 53 that are regularly arranged along the plane direction of the mask 50. When a display device such as an organic EL display device is manufactured using the mask 50, one cell 54 corresponds to a display area of one organic EL display device. The peripheral area 55 is an area surrounding the cell 54. The first end 50a is a region extending from the first end 501 to the cell 54. The second end 50b is a region extending from the second end 502 to the cell 54. The first end portion 50a and the second end portion 50b are fixed to the second side region 412.

As shown in FIGS. 3 and 4, the mask 50 may include two or more cells 54 aligned in the mask first direction D1. In this case, the first end 50a is the region between the cell 54 closest to the first end 501 and the first end 501, and the second end 50b is the cell 54 closest to the second end 502. The region between the second end 502 and the second end 502.

Next, the through hole 53 of the mask 50 will be described in detail. FIG. 5 is a plan view showing an example of the first mask 50 used when forming the first layer 140A of the second electrode 140 described above. FIG. 6 is a cross-sectional view of the first mask 50 along lines IV-IV of FIG. In the following description, the first mask 50 is also simply referred to as a mask 50. The mask 50 may include a plurality of through holes 53 arranged in the plane direction of the mask 50. The through hole 53 penetrates the metal plate 51 from the first surface 51a to the second surface 51b. The plurality of through holes 53 may be arranged along two different directions.

The through hole 53 may include a first recess 531 located on the first surface 51a side of the metal plate 51 and a second recess 532 located on the second surface 51b side and connected to the first recess 531. good. In a plan view, the dimension r2 of the second recess 532 may be larger than the dimension r1 of the first recess 531. The first recess 531 may be formed by processing the metal plate 51 from the first surface 51a side by etching or the like. The second recess 532 may be formed by processing the metal plate 51 from the second surface 51b side by etching or the like.

The first recess 531 and the second recess 532 are connected by a circumferential connection portion 533. The connecting portion 533 may define a penetrating portion 534 that minimizes the opening area of the through hole 53 in the plan view of the mask 50.

The dimension r of the penetration portion 534 in the direction in which the through holes 53 are lined up may be, for example, 10 μm or more, 50 μm or more, or 100 μm or more. The dimension r of the penetration portion 534 may be, for example, 500 μm or less, 1 mm or less, or 5 mm or less. The range of the dimension r of the penetration portion 534 may be defined by a first group consisting of 10 μm, 50 μm and 100 μm and / or a second group consisting of 500 μm, 1 mm and 5 mm. The range of the dimension r of the penetration portion 534 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. good. The range of the dimension r of the penetration portion 534 may be determined by any combination of any two of the values included in the first group described above. The range of the dimension r of the penetration portion 534 may be determined by any combination of any two of the values included in the second group described above. For example, it may be 10 μm or more and 5 mm or less, 10 μm or more and 1 mm or less, 10 μm or more and 500 μm or less, 10 μm or more and 100 μm or less, 10 μm or more and 50 μm or less, 50 μm or more and 5 mm or less, and 50 μm or more and 1 mm or less. , 50 μm or more and 500 μm or less, 50 μm or more and 100 μm or less, 100 μm or more and 5 mm or less, 100 μm or more and 1 mm or less, 100 μm or more and 500 μm or less, 500 μm or more and 5 mm or less, 500 μm or more and 1 mm or less. It may be 1 mm or more and 5 mm or less.

The dimension r of the penetration portion 534 is defined by the light transmitted through the through hole 53. For example, parallel light is incident on one of the first surface 51a or the second surface 51b of the mask 50 along the normal direction of the mask 50, and is transmitted through the through hole 53 to pass through the other of the first surface 51a or the second surface 51b. Emit from. Then, the dimension of the region occupied by the emitted light in the surface direction of the mask 50 is adopted as the dimension r of the penetrating portion 534.

The thickness T of the mask 50 may be, for example, 5 μm or more, 10 μm or more, 15 μm or more, or 20 μm or more. The thickness T of the mask 50 may be, for example, 25 μm or less, 30 μm or less, 50 μm or less, or 100 μm or less. The range of the thickness T of the mask 50 may be defined by a first group of 5 μm, 10 μm, 15 μm and 20 μm and / or a second group of 25 μm, 30 μm, 50 μm and 100 μm. The range of the thickness T of the mask 50 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. .. The range of the thickness T of the mask 50 may be determined by any combination of any two of the values included in the first group described above. The range of the thickness T of the mask 50 may be determined by any combination of any two of the values included in the second group described above. For example, it may be 5 μm or more and 100 μm or less, 5 μm or more and 50 μm or less, 5 μm or more and 30 μm or less, 5 μm or more and 25 μm or less, 5 μm or more and 20 μm or less, 5 μm or more and 15 μm or less, or 5 μm or more and 10 μm or less. It may be 10 μm or more and 100 μm or less, 10 μm or more and 50 μm or less, 10 μm or more and 30 μm or less, 10 μm or more and 25 μm or less, 10 μm or more and 20 μm or less, 10 μm or more and 15 μm or less, 15 μm or more and 100 μm or less. It may be 15 μm or more and 50 μm or less, 15 μm or more and 30 μm or less, 15 μm or more and 25 μm or less, 15 μm or more and 20 μm or less, 20 μm or more and 100 μm or less, 20 μm or more and 50 μm or less, 20 μm or more and 30 μm or less, 20 μm. It may be 25 μm or less, 25 μm or more and 100 μm or less, 25 μm or more and 50 μm or less, 25 μm or more and 30 μm or less, 30 μm or more and 100 μm or less, 30 μm or more and 50 μm or less, and 50 μm or more and 100 μm or less.

As a method for measuring the thickness T of the mask 50, a contact-type measuring method can be adopted. As a contact type measurement method, a length gauge HEIDENHAIN-METRO "MT1271" manufactured by Heidenhain Co., Ltd., which is equipped with a ball bush guide type plunger, can be used.

The cross-sectional shape of the through hole 53 of the mask 50 is not limited to the shape shown in FIG. Further, the method for forming the through hole 53 of the mask 50 is not limited to etching, and various methods can be adopted. For example, the mask 50 may be formed by plating so as to form a through hole 53.

As the material constituting the mask 50, for example, an iron alloy containing nickel can be used. The iron alloy may further contain cobalt in addition to nickel. For example, as the material of the mask 50, an iron alloy having a total content of nickel and cobalt of 30% by mass or more and 54% by mass or less and a cobalt content of 0% by mass or more and 6% by mass or less is used. be able to. Examples of nickel or an iron alloy containing nickel and cobalt include an inver material containing 34% by mass or more and 38% by mass or less of nickel, and a superinver material containing 30% by mass or more and 34% by mass or less of nickel and further cobalt. 42 alloys containing 40% by mass or more and 43% by mass or less of nickel, low thermal expansion Fe—Ni based plating alloys containing 38% by mass or more and 54% by mass or less of nickel can be used. By using such an iron alloy, the coefficient of thermal expansion of the mask 50 can be lowered. For example, when a glass substrate is used as the substrate 110, the coefficient of thermal expansion of the mask 50 can be set to a value as low as that of the glass substrate. As a result, it is possible to prevent the dimensional accuracy and the position accuracy of the thin-film deposition layer formed on the substrate 110 from being lowered due to the difference in the coefficient of thermal expansion between the mask 50 and the substrate 110 during the vapor deposition step. ..

In the method for manufacturing the organic device 100, a second mask may be used in addition to the first mask 50. The second mask is used, for example, when forming the second layer 140B of the second electrode 140 described above. Like the first mask 50, the second mask may include a plurality of through holes arranged in the plane direction of the second mask. The through hole of the second mask is configured such that the second layer 140B partially overlaps the first layer 140A.

Next, the problem to be solved by this embodiment will be described.

In the step of forming a layer on the substrate 110 by vapor deposition using the mask 50, the vapor deposition material adheres to the mask 50 and is deposited. As the amount of deposit increases, it is possible that the deposit will come off the mask 50 during the deposition process. Further, when the amount of deposit increases, it is considered that the change in the shape of the through hole due to the deposit cannot be ignored. Therefore, when the mask 50 is repeatedly used in a plurality of thin-film deposition steps, it is preferable to wash the mask 50 to remove deposits.

Conventionally, a thin-film deposition method using a mask has been used to form the organic layer 130. The organic layer 130 is formed by adhering an organic material onto the first electrode 120 through the through holes of the mask. An organic solvent is used as a cleaning liquid for cleaning a mask to which an organic material is attached.

When the second electrode 140 is formed by the vapor deposition method using the mask 50, it is required to establish a method for cleaning the mask 50 to which the conductive material is attached. FIG. 7 is a diagram showing an example of a mask 50 to which a thin-film deposition material 7 including a conductive material is attached.

It is conceivable to use an acid as a cleaning liquid for removing the conductive material. However, when acid is used, it is conceivable that the metal plate 51 of the mask 50 will dissolve. It is also possible that environmental problems will occur.

As a cleaning liquid for removing the conductive material, it is conceivable to use an aqueous solution containing iodine and an iodine compound showing weak acidity to the extent that the metal plate 51 of the mask 50 does not dissolve.

However, as a result of research by the present inventors, it has been found that when an aqueous solution containing iodine and an iodine compound is used, defects such as holes may occur in the mask 50. FIG. 8 is a cross-sectional view showing an example of a defect 56 generated in the mask 50 in the cleaning step. When the defect 56 reaches the wall surface of the through hole 53, the dimension r of the through portion 534 may change. For example, as shown in FIG. 8, it is conceivable that the dimension r of the through hole 53 in which the defect 56 is generated is larger than the dimension r of the other through holes 53. If the second electrode 140 is formed by using the mask 50 in which the defect 56 is generated, the accuracy of the shape, dimensions, etc. of the second electrode 140 is lowered.

According to the cleaning method of the present embodiment, such a problem can be solved. Hereinafter, the cleaning method will be described. The cleaning method includes a cleaning step of cleaning the mask 50 by bringing the cleaning liquid into contact with the mask 50. FIG. 9 is a diagram showing an example of a cleaning device 60 for carrying out a cleaning method.

The cleaning device 60 includes a cleaning tank 61 that directly or indirectly accommodates the cleaning liquid 70. The mask 50 can be washed by performing a dipping step of immersing the mask 50 in the cleaning liquid 70. The cleaning liquid 70 may be directly contained in the cleaning tank 61, or may be indirectly contained in the cleaning tank 61. The mask 50 may be immersed in the cleaning liquid 70 while being fixed to the frame 41. That is, in the dipping step, the mask device 40 including the frame 41 and the mask 50 may be immersed in the cleaning liquid 70.
"Directly" means that the cleaning liquid 70 is in contact with the wall surface of the cleaning tank 61.
“Indirect” means that the cleaning liquid 70 is not in contact with the wall surface of the cleaning tank 61. An example of indirect storage is a form in which a container containing the cleaning liquid 70 is arranged inside the cleaning tank 61. According to this form, it is possible to prevent the wall surface of the cleaning tank 61 from being contaminated by the cleaning liquid 70. The cleaning tank 61 may contain a liquid such as water.
As the material constituting the container, glass, resin, metal or the like can be used. As the glass, soda lime glass, non-alkali glass, quartz, enamel and the like can be used. As the resin, epoxy resin, melamine resin, phenol resin, polyurethane, polycarbonate, fluororesin, acrylic resin, nylon, polypropylene, polyethylene, ABS, polystyrene, vinyl chloride resin and the like can be used. ABS is a copolymerized synthetic resin of acrylonitrile, butadiene, and styrene. As the fluororesin, PTFE, ETFE and the like can be used. PTFE is a polymer of tetrafluoroethylene. ETFE is a copolymer of tetrafluoroethylene and ethylene.

The cleaning liquid 70 will be described. The cleaning liquid 70 contains potassium iodide and iodine. Potassium iodide is, for example, in a state of chemical equilibrium represented by the following formula (1). Iodine is, for example, in a state of chemical equilibrium represented by the following formula (2).

下記の式（５）、（６）又は式（５）、（７）は、銀が洗浄液７０に溶解する際に生じると考えられる化学反応の一例である。

The cleaning liquid 70 may remove the conductive material from the mask 50 by dissolving the conductive material. The chemical reaction that occurs when the conductive material is removed by the cleaning liquid 70 will be described. Here, a case where the conductive material contains magnesium and silver will be described.
The following formulas (3) and (4) are examples of chemical reactions considered to occur when magnesium is dissolved in the cleaning liquid 70.

The following formulas (5), (6) or formulas (5), (7) are examples of chemical reactions considered to occur when silver is dissolved in the cleaning liquid 70.

A chemical reaction other than the above formulas (1) to (7) may occur in the cleaning liquid 70.

The temperature of the cleaning liquid 70 may be, for example, 10 ° C. or higher, 15 ° C. or higher, 18 ° C. or higher, or 20 ° C. or higher. The temperature of the cleaning liquid 70 may be, for example, less than 25 ° C. or 23 ° C. or lower. The temperature range of the cleaning solution 70 may be defined by a first group consisting of 10 ° C, 15 ° C, 18 ° C and 20 ° C and / or a second group consisting of 25 ° C and 23 ° C. The temperature range of the cleaning liquid 70 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The temperature range of the cleaning solution 70 may be determined by any combination of any two of the values included in the first group described above. The temperature range of the cleaning solution 70 may be determined by any combination of any two of the values included in the second group described above. For example, it may be 10 ° C. or higher and 23 ° C. or lower, 10 ° C. or higher and lower than 25 ° C., 10 ° C. or higher and 20 ° C. or lower, 10 ° C. or higher and 18 ° C. or lower, 10 ° C. or higher and 15 ° C. or lower, and 15 ° C. or higher. It may be 23 ° C or lower, 15 ° C or higher and lower than 25 ° C, 15 ° C or higher and 20 ° C or lower, 15 ° C or higher and 18 ° C or lower, 18 ° C or higher and 23 ° C or lower, and 18 ° C or higher and lower than 25 ° C. , 18 ° C. or higher and 20 ° C. or lower, 20 ° C. or higher and 23 ° C. or lower, 20 ° C. or higher and lower than 25 ° C., or 23 ° C. or higher and lower than 25 ° C.

The higher the temperature, the easier it is for the conductive material to dissolve in the cleaning liquid 70. The lower the temperature, the more it is possible to suppress the occurrence of defects in the mask 50 in the cleaning process.

As shown in FIG. 9, the cleaning device 60 may include a temperature control device 63. The temperature control device 63 controls the temperature of the cleaning liquid 70 contained in the cleaning tank 61. The temperature control device 63 can control the temperature of the cleaning liquid 70 so that the temperature of the cleaning liquid 70 is within the above range. The temperature control device 63 may have a function or ability to control the temperature of the cleaning liquid 70 outside the above range. For example, the temperature control device 63 may have a function or ability to control the temperature of the cleaning liquid 70 to 10 ° C. or higher and 30 ° C. or lower or 15 ° C. or higher and 30 ° C. or lower.

The concentration of iodine in the cleaning liquid 70 may be, for example, 5 g / L or more, 6 g / L or more, or 8 g / L or more. The iodine concentration may be, for example, 10 g / L or less, 15 g / L or less, or 20 g / L or less. The range of iodine concentrations may be defined by a first group of 5 g / L, 6 g / L and 8 g / L and / or a second group of 10 g / L, 15 g / L and 20 g / L. .. The range of iodine concentration may be determined by a combination of any one of the values contained in the first group described above and any one of the values contained in the second group described above. The range of iodine concentration may be determined by any combination of any two of the values included in the first group described above. The range of iodine concentration may be determined by any combination of any two of the values included in the second group described above. For example, it may be 5 g / L or more and 20 g / L or less, 5 g / L or more and 15 g / L or less, 5 g / L or more and 10 g / L or less, 5 g / L or more and 8 g / L or less, and 5 g / L or more. It may be 6 g / L or less, 6 g / L or more and 20 g / L or less, 6 g / L or more and 15 g / L or less, 6 g / L or more and 10 g / L or less, and 6 g / L or more and 8 g / L or less. , 8 g / L or more and 20 g / L or less, 8 g / L or more and 15 g / L or less, 8 g / L or more and 10 g / L or less, 10 g / L or more and 20 g / L or less, 10 g / L or more and 15 g It may be less than / L, and may be 15 g / L or more and 20 g / L or less.

The iodine concentration can be adjusted, for example, by adding potassium iodide or a solid iodine, or water to the cleaning solution 70.

The iodine concentration is a numerical value assuming that all the iodine present in the cleaning liquid 70 is in the form of the iodine molecule I ₂ . Redox titration can be used as a method for measuring the iodine concentration.

The pH of the cleaning liquid 70 may be, for example, 4.00 or higher, 4.10 or higher, or 4.25 or higher. The pH of the cleaning liquid 70 may be, for example, 4.50 or less, 4.80 or less, or 5.00 or less. The pH range of the cleaning solution 70 may be defined by a first group consisting of 4.00, 4.10 and 4.25 and / or a second group consisting of 4.50, 4.80 and 5.00. good. The pH range of the cleaning solution 70 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The pH range of the cleaning solution 70 may be determined by any combination of any two of the values included in the first group described above. The pH range of the cleaning solution 70 may be determined by any combination of any two of the values included in the second group described above. For example, it may be 4.00 or more and 5.00 or less, 4.00 or more and 4.80 or less, 4.00 or more and 4.50 or less, 4.00 or more and 4.25 or less, or 4.00 or more. It may be 4.10 or less, 4.10 or more and 5.00 or less, 4.10 or more and 4.80 or less, 4.10 or more and 4.50 or less, or 4.10 or more and 4.25 or less. 4.25 or more and 5.00 or less, 4.25 or more and 4.80 or less, 4.25 or more and 4.50 or less, 4.50 or more and 5.00 or less, 4.50 or more and 4 It may be .80 or less, and may be 4.80 or more and 5.00 or less.

As a method for measuring the pH of iodine, an AS ONE pH meter AS600 can be used. As the pH standard solution for calibrating the pH meter, pH 4.01, pH 6.86, and pH 9.18 can be used.

The cleaning treatment time using the cleaning liquid 70 may be, for example, 1 minute or longer, 5 minutes or longer, or 10 minutes or longer. The time of the washing step may be, for example, 20 minutes or less, 40 minutes or less, or 60 minutes or less. The time range of the washing step may be defined by a first group consisting of 1 minute, 5 minutes and 10 minutes and / or a second group consisting of 20 minutes, 40 minutes and 60 minutes. The time range of the cleaning step may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The time range of the washing step may be determined by any combination of any two of the values included in the first group described above. The time range of the washing step may be determined by any combination of any two of the values included in the second group described above. For example, it may be 1 minute or more and 60 minutes or less, 1 minute or more and 40 minutes or less, 1 minute or more and 20 minutes or less, 1 minute or more and 10 minutes or less, 1 minute or more and 5 minutes or less, 5 minutes or more. It may be 60 minutes or less, 5 minutes or more and 40 minutes or less, 5 minutes or more and 20 minutes or less, 5 minutes or more and 10 minutes or less, 10 minutes or more and 60 minutes or less, or 10 minutes or more and 40 minutes or less. It may be 10 minutes or more and 20 minutes or less, 20 minutes or more and 60 minutes or less, 20 minutes or more and 40 minutes or less, or 40 minutes or more and 60 minutes or less.

The cleaning device 60 may include two or more cleaning tanks 61. In the example shown in FIG. 9, the cleaning device 60 includes a first cleaning tank 61, a second cleaning tank 61, and a third cleaning tank 61. In this case, the cleaning device 60 may include a transport mechanism for transporting the mask 50 between the cleaning tanks 61. In the example shown in FIG. 9, the transport mechanism immerses the mask 50 in the cleaning liquid 70 of the first cleaning tank 61 as shown by the arrow A1. Subsequently, after the processing time has elapsed, the transport mechanism pulls up the mask 50 from the cleaning liquid 70 of the first cleaning tank 61. Subsequently, the transport mechanism transports the mask 50 from the first cleaning tank 61 to the second cleaning tank 61, as shown by the arrow B1. Subsequently, the transport mechanism immerses the mask 50 in the cleaning liquid 70 of the second cleaning tank 61 as shown by the arrow A2. Subsequently, after the processing time has elapsed, the transport mechanism pulls the mask 50 out of the cleaning liquid 70 of the second cleaning tank 61. Subsequently, the transport mechanism transports the mask 50 from the second cleaning tank 61 to the third cleaning tank 61, as shown by the arrow B2. Subsequently, the transport mechanism immerses the mask 50 in the cleaning liquid 70 of the third cleaning tank 61 as shown by the arrow A3. Subsequently, after the processing time has elapsed, the transport mechanism pulls the mask 50 out of the cleaning liquid 70 of the third cleaning tank 61.

By providing the cleaning device 60 with two or more cleaning tanks 61, it is possible to adjust the total cleaning processing time received by the mask 50 while keeping the processing time in each cleaning tank 61 constant. When the cleaning device 60 includes two or more cleaning tanks 61, the numerical range of the cleaning processing time described above is applied to the total cleaning processing time received by the mask 50 in the plurality of cleaning tanks 61.

The cleaning step may include an ultrasonic step of applying ultrasonic waves to the cleaning liquid 70. In this case, the cleaning device 60 may include an ultrasonic control device 62. The ultrasonic control device 62 controls the frequency, output, and the like of the ultrasonic waves applied to the cleaning liquid 70. The ultrasonic control device 62 includes, for example, an ultrasonic transducer. The ultrasonic transducer includes, for example, piezoelectric ceramics.
The ultrasonic transducer may be arranged inside the cleaning tank 61 so as to be in contact with the cleaning liquid 70. In this case, the ultrasonic transducer may be a so-called throw-in type that is not fixed to the cleaning tank 61. Alternatively, the ultrasonic transducer may be fixed to the cleaning tank 61.
The ultrasonic transducer may be fixed to the wall surface of the cleaning tank 61. For example, the ultrasonic transducer may be installed on the bottom surface of the cleaning tank 61 outside the cleaning tank 61.

The frequency of the ultrasonic wave may be, for example, 50 kHz or more, 75 kHz or more, or 100 kHz or more. The frequency of the ultrasonic wave may be, for example, 200 kHz or less, 500 kHz or less, or 1 MHz or less. The ultrasonic frequency range may be defined by a first group consisting of 50 kHz, 75 kHz and 100 kHz and / or a second group consisting of 200 kHz, 500 kHz and 1 MHz. The frequency range of the ultrasonic waves may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The frequency range of the ultrasonic waves may be determined by any combination of any two of the values included in the first group described above. The range of ultrasonic frequencies may be determined by any combination of any two of the values included in the second group described above. For example, it may be 50 kHz or more and 1 MHz or less, 50 kHz or more and 500 kHz or less, 50 kHz or more and 200 kHz or less, 50 kHz or more and 100 kHz or less, 50 kHz or more and 75 kHz or less, 75 kHz or more and 1 MHz or less, and 75 kHz or more and 500 kHz or less. , 75 kHz or more and 200 kHz or less, 75 kHz or more and 100 kHz or less, 100 kHz or more and 1 MHz or less, 100 kHz or more and 500 kHz or less, 100 kHz or more and 200 kHz or less, 200 kHz or more and 1 MHz or less, 200 kHz or more and 500 kHz or less. It may be 500 kHz or more and 1 MHz or less.

The output density of the ultrasonic wave may be, for example, 0.005 W / cm ² or more, 0.01 W / cm ² or more, or 0.027 W / cm ² or more. The output density of the ultrasonic wave may be, for example, 0.054 W / cm ² or less, 0.081 W / cm ² or less, 0.085 W / cm ² or less, or 0.1 W / cm ² or less. The range of ultrasonic output densities is the first group consisting of 0.005 W / cm ² , 0.01 W / cm ² and 0.027 W / cm ² , and / or 0.054 W / cm ² , 0.081 W /. It may be defined by a second group consisting of cm ² , 0.085 W / cm ² and 0.1 W / cm ² . The range of the ultrasonic output density may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. .. The range of ultrasonic output densities may be determined by any combination of any two of the values included in the first group described above. The range of ultrasonic output densities may be determined by any combination of any two of the values included in the second group described above. For example, 0.005 W / cm ² or more and 0.1 W / cm ² or less may be used, 0.005 W / cm ² or more and 0.085 W / cm ² or less, 0.005 W / cm ² or more and 0.081 W / cm ² or less. It may be 0.005 W / cm ² or more and 0.054 W / cm ² or less, 0.005 W / cm ² or more and 0.027 W / cm ² or less, 0.005 W / cm ² or more and 0.01 W / cm ² or less. It may be less than or equal to 0.01 W / cm ² or more and 0.1 W / cm ² or less, 0.01 W / cm ² or more and 0.085 W / cm ² or less, 0.01 W / cm ² or more and 0.081 W / cm. It may be ² or less, 0.01 W / cm ² or more and 0.054 W / cm ² or less, 0.01 W / cm ² or more and 0.027 W / cm ² or less, 0.027 W / cm ² or more and 0.1 W / cm. It may be cm ² or less, 0.027 W / cm ² or more and 0.085 W / cm ² or less, 0.027 W / cm ² or more and 0.081 W / cm ² or less, 0.027 W / cm ² or more and 0.054 W. / Cm ² or less, 0.054 W / cm ² or more and 0.1 W / cm ² or less, 0.054 W / cm ² or more and 0.081 W / cm ² or less, 0.054 W / cm ² or more 0. It may be 085 W / cm ² or less, 0.081 W / cm ² or more and 0.1 W / cm ² or less, or 0.085 W / cm ² or more and 0.1 W / cm ² or less.

The ultrasonic output density is calculated by dividing the ultrasonic output set in the ultrasonic control device 62 by the area of the ultrasonic transducer.

As shown in FIG. 9, the cleaning device 60 may include a cleaning tank 61 containing the treatment liquid 76. The treatment liquid 76 is, for example, water. By immersing the mask 50 in the treatment liquid 76, the cleaning liquid 70 adhering to the mask 50 can be removed. As shown in FIG. 9, the cleaning device 60 may include a drying device 77 for drying the mask 50.

The cleaning step may include a pretreatment step performed prior to the dipping step. The pretreatment step may include, for example, a laser irradiation step of irradiating the vapor-filmed material adhering to the mask 50 with a laser. The cleaning step may not include the laser irradiation step. Even when the laser irradiation step is not performed, the mask 50 can be appropriately cleaned by removing the conductive material from the mask 50 by utilizing dissolution.

Next, an example of a method for manufacturing the organic device 100 will be described.

First, the substrate 110 on which the first electrode 120 is formed is prepared. The first electrode 120 is formed, for example, by forming the conductive layer constituting the first electrode 120 on the substrate 110 by a sputtering method or the like, and then patterning the conductive layer by a photolithography method or the like. An insulating layer 160 located between two adjacent first electrodes 120 may be formed on the substrate 110.

Subsequently, the organic layer 130 including the first organic layer 130A, the second organic layer 130B, and the like is formed on the first electrode 120. The first organic layer 130A may be formed, for example, by a thin-film deposition method using a mask having through holes corresponding to the first organic layer 130A. For example, the first organic layer 130A can be formed by depositing an organic material or the like on the first electrode 120 corresponding to the first organic layer 130A via a mask. The second organic layer 130B may also be formed by a thin-film deposition method using a mask having through holes corresponding to the second organic layer 130B.

Subsequently, a second electrode forming step of forming the second electrode 140 on the organic layer 130 is carried out. For example, a step of forming the first layer 140A of the second electrode 140 by a thin-film deposition method using the first mask 50 is carried out. For example, the first layer 140A can be formed by depositing a conductive material such as a metal material on the organic layer 130 or the like via the first mask 50. Subsequently, a step of forming the second layer 140B of the second electrode 140 by a thin-film deposition method using the second mask 50 may be carried out. For example, the second layer 140B can be formed by depositing a conductive material such as a metal material on the organic layer 130 or the like via the second mask 50. In this way, as shown in FIG. 1, the second electrode 140 including the first layer 140A and the second layer 140B can be formed. As a result, the organic device 100 shown in FIG. 1 can be obtained.

Subsequently, a cleaning step of cleaning the mask 50 such as the first mask 50 and the second mask 50 may be carried out by the cleaning method using the cleaning liquid 70 described above. As a result, the conductive material adhering to the mask 50 can be removed. In addition, it is possible to prevent the mask 50 from having defects such as holes during cleaning. Therefore, the mask 50 can be reused.

The above-described embodiment can be changed in various ways. Hereinafter, other embodiments will be described with reference to the drawings as necessary. In the following description and the drawings used in the following description, the same reference numerals as those used for the corresponding portions in the above-described embodiment are used for the portions that can be configured in the same manner as in the above-described embodiment. Duplicate explanations will be omitted. Further, when it is clear that the action and effect obtained in one embodiment described above can be obtained in other embodiments, the description thereof may be omitted.

FIG. 10 is a plan view showing an example of the mask 50 used when forming the second electrode 140. The plurality of through holes 53 may be arranged along the first direction. Each through hole 53 may extend in a direction orthogonal to the first direction.

The cleaning solution may contain potassium iodide, iodine and an organic compound. The organic compound contains one or more carboxy groups. The organic compound may contain an organic acid such as a carboxylic acid, an amino acid or a nitrocarboxylic acid. The organic compound may contain salts of organic acids. Salts of organic acids may contain ionic bonds. Ionic bonds may occur at the carboxy group. Examples of salts of organic acids are ammonium salts, sodium salts, potassium salts and the like. Ammonium salts contain a structure of "-COONH ₄ ". Sodium salts include a "-COONa" structure. The potassium salt contains a "-COOK" structure.

When the organic acid contains two carboxy groups, one carboxy group may have an ionic bond, the two carboxy groups may have an ionic bond, and the two carboxy groups may have no ionic bond. The ionic bonds that occur in the two carboxy groups may be the same or different. For example, the salt of the organic acid may contain one of an ammonium salt, a sodium salt and a potassium salt, and may contain two kinds.

When the organic acid contains three carboxy groups, one carboxy group may have an ionic bond, two carboxy groups may have an ionic bond, and the three carboxy groups may have an ionic bond. Also, ionic bonding may not occur. The ionic bonds that occur in the three or more carboxy groups may be the same or different. For example, the salt of the organic acid may contain one of an ammonium salt, a sodium salt and a potassium salt, may contain two kinds, and may contain three kinds.

Since the cleaning liquid contains an organic compound or a salt of an organic acid, it is possible to suppress the occurrence of defects such as holes in the mask 50 during cleaning. One of the reasons is that the organic compound or the salt of the organic acid present on or around the surface of the mask 50 during cleaning functions as a protective material. However, the reason why the defect can be suppressed is not limited to the above reason.

The concentration of the salt of the organic compound or the organic acid in the washing liquid may be, for example, 1.0 g / L or more, 3.0 g / L or more, or 10 g / L or more. The concentration of the salt of the organic compound or the organic acid may be, for example, 50 g / L or less, 150 g / L or less, or 450 g / L or less. The range of concentrations of organic compounds or salts of organic acids ranges from the first group consisting of 1.0 g / L, 3.0 g / L and 10 g / L and / or from 50 g / L, 150 g / L and 450 g / L. It may be determined by the second group. The range of concentrations of organic compounds or salts of organic acids is determined by the combination of any one of the values contained in the first group described above and any one of the values contained in the second group described above. May be done. The range of concentrations of organic compounds or salts of organic acids may be determined by any combination of any two of the values included in the first group described above. The range of concentrations of organic compounds or salts of organic acids may be determined by any combination of any two of the values included in the second group described above. For example, it may be 1.0 g / L or more and 450 g / L or less, 1.0 g / L or more and 150 g / L or less, 1.0 g / L or more and 50 g / L or less, and 1.0 g / L or more and 10 g / L. It may be 1.0 g / L or more and 3.0 g / L or less, 3.0 g / L or more and 450 g / L or less, 3.0 g / L or more and 150 g / L or less, or 3.0 g / L. It may be 50 g / L or less, 3.0 g / L or more and 10 g / L or less, 10 g / L or more and 450 g / L or less, 10 g / L or more and 150 g / L or less, and 10 g / L or more and 50 g / L. It may be 50 g / L or more and 450 g / L or less, 50 g / L or more and 150 g / L or less, or 150 g / L or more and 450 g / L or less.

Examples of organic acids such as carboxylic acids, amino acids, nitrocarboxylic acids are formic acid, acetic acid, propionic acid, butyric acid, isobutyric acid, valeric acid, isovaleric acid, caproic acid, enanthic acid, capric acid, pelargonic acid, capric acid, Lauric acid, myristic acid, pentadecylic acid, palmitic acid, margaric acid, stearic acid, oleic acid, linoleic acid, linolenic acid, tubercrostearic acid, arachidic acid, arachidonic acid, eikosapentaenoic acid, bechenic acid, docosahexaenoic acid, sorbic acid , Lactic acid, malic acid, glycolic acid, citric acid, tartaric acid, gluconic acid, benzoic acid, phthalic acid, isophthalic acid, terephthalic acid, salicylic acid, gallic acid, melitonic acid, silicic acid, oxalic acid, malonic acid, succinic acid, Glutal acid, adipic acid, fumaric acid, maleic acid, aconitic acid, pyruvate, oxaloacetate, amino acids, glutamic acid, aspartic acid, arginine, lysine, histidine, glutamine, alanine, threonine, proline, methionine, glycine, glycylglycine, Glycyrrhizyl glycine, alanine, glycylalanine, aminocaproic acid, valine, leucine, isoleucine, serine, threonine, cysteine, methionine, lysine, asparagine, glutamine, proline, phenylalanine, tyrosine, tryptophan, treonine, cystine, hydroxyproline, hydroxy Lithin, thyroxin, O-phosphoserine, β-alanine, sarcosine, ornithine, citrulin, creatine, γ-aminobutyric acid, opain, trimethylglycine, theanine, tricholomic acid, quinic acid, doumoic acid, ibotenic acid, acromelic acid, nitroacetic acid, o-nitroso benzoic acid, m-nitroso benzoic acid, p-nitroso benzoic acid, o-nitro benzoic acid, m-nitro benzoic acid, p-nitro benzoic acid, 2,4-dinitro benzoic acid, 2,4,6- Trinitrobenzoic acid, 3-nitrophthalic acid, 5-nitroisophthalic acid, nitroterephthalic acid, 3-nitrophthalic acid anhydride and the like.

The amino acid may be an α-amino acid. The α-amino acid other than glycine may contain only the L-form, may contain only the D-form, and may contain the L-form and the D-form.

Next, the embodiments of the present disclosure will be described in more detail by way of examples, but the embodiments of the present disclosure are not limited to the description of the following examples as long as the gist of the present disclosure is not exceeded.

Example 1
A metal plate made of an iron alloy containing 36% by weight of nickel was prepared. The thickness of the metal plate was 26 μm. Subsequently, by cutting the metal plate, two samples for carrying out evaluation 1 and evaluation 2 were prepared. The two samples for evaluation 1 and evaluation 2 are also referred to as a first sample and a second sample. The shape of the sample in plan view was a rectangle with a long side of 70 mm and a short side of 20 mm.

A cleaning solution containing potassium iodide and iodine was prepared. The material of the cleaning liquid is shown below.
・ 450g of release agent containing potassium iodide
・ Pure water 1000ml
・ 20g of iodine manufactured by Kanto Chemical Co., Inc.
As the release agent, Top Lip ISG-S manufactured by Okuno Pharmaceutical Industry Co., Ltd. was used. In the preparation step, first, pure water was added to the top lip ISG-S to prepare an aqueous solution. Subsequently, a cleaning solution was prepared by adding iodine to the aqueous solution.
When potassium iodide and pure water are mixed, an endothermic reaction occurs, so that the temperature of the aqueous solution drops. When iodine is added to an aqueous solution at a low temperature, iodine is difficult to dissolve in the aqueous solution. In consideration of this point, iodine was added to the aqueous solution after the temperature of the aqueous solution returned to the temperature of the original pure water.
The concentration of potassium iodide in the stripper was 90% by weight. The concentration of iodine in the washing liquid was 20 g / L. The pH of the cleaning solution was 4.32.

A cleaning tank 61 containing a cleaning liquid was prepared. The volume of the washing liquid was 50 ml. The temperature of the cleaning liquid was 35 ° C. Subsequently, the sample was immersed in the cleaning solution 70 for 60 minutes.

The surface of the sample taken out from the cleaning liquid was rinsed with running water for 5 minutes, water droplets were removed with an air gun, and then evaluation 1 was carried out. In evaluation 1, the surface of the sample was observed using an optical microscope. Holes exceeding the size of 10 μm were observed on the surface of the first sample and the surface of the second sample. The observation conditions are as follows.
Magnification: 50 times Observation range: 150.0 μm (vertical) x 180.0 μm (horizontal)

The number and dimensions of holes exceeding the size of 10 μm were measured. The results are shown in the "Evaluation 1" column of FIG. In the "judgment" column of "evaluation 1" in FIG. 11, "NG" indicates that a hole having a size of more than 10 μm was observed on the surface of the first sample or the surface of the second sample. "OK" means that no holes exceeding the size of 10 μm were observed on the surface of the first sample and the surface of the second sample. The "Number" column of "Evaluation 1" represents the number of holes exceeding the dimension of 10 μm. The "dimensions" column of "evaluation 1" represents the maximum dimension of the hole in plan view. The upper row in the "Number" and "Dimension" columns represents the evaluation result of the first sample. The lower row of the "Number" and "Dimension" columns shows the evaluation result of the second sample. In the first sample of Example 1, the number of holes exceeding the size of 10 μm was 5, and the largest of the 5 holes had a size of 90 μm in plan view. In the second sample of Example 1, the number of holes exceeding the size of 10 μm was 3, and the largest hole among the 3 holes had a size of 70 μm in a plan view.

In addition to evaluation 1, evaluation 2 was performed. In evaluation 2, the surface of the sample taken out from the washing liquid was observed using an optical microscope under the same conditions as in evaluation 1. The results are shown in the "Evaluation 2" column of FIG. In the column of "evaluation 2", "OK" means that no cracks were observed on the surface and end face of the first sample and the surface and end face of the second sample. “NG” indicates that cracks were observed on the surface and end face of the first sample and the surface and end face of the second sample.

Examples 2-6
Evaluation 1 and evaluation 2 were carried out in the same manner as in the case of Example 1 by changing the temperature of the cleaning liquid. The results are shown in FIG.

No holes were observed when the temperature of the cleaning solution was less than 25 ° C, specifically when it was 23 ° C or lower. On the other hand, when the temperature of the cleaning liquid was 25 ° C. or higher, holes were observed. It is considered that the generation of holes was suppressed because the cleaning speed was reduced by lowering the temperature.

For Examples 4 to 6, evaluation 3 was performed using the third sample and the fourth sample. In evaluation 3, the cleaning characteristics in the cleaning method were evaluated.

Specifically, first, as in the case of Example 1, a metal plate made of an iron alloy containing 36% by weight of nickel was prepared. The thickness of the metal plate was 26 μm. Subsequently, a sample was prepared by cutting a metal plate. The shape of the sample in plan view was a rectangle with a long side of 70 mm and a short side of 20 mm. Subsequently, a magnesium-silver film was formed on the sample by a thin-film deposition method.
The above-mentioned third sample means a sample in which a magnesium-silver film is formed. The thickness of the magnesium silver film was 500 nm. The ratio of the film thickness of magnesium to silver in magnesium silver was 9: 1. The ratio of magnesium to silver film thickness is detected by the crystal unit at the time of vapor deposition.
The above-mentioned fourth sample means a sample in which a magnesium-silver film having a different ratio from that of the third sample is formed. The thickness of the magnesium silver film was 500 nm. The ratio of the film thickness of magnesium to silver in magnesium silver was 1: 9. The ratio of magnesium to silver film thickness is detected by the crystal unit at the time of vapor deposition.

Subsequently, the third sample and the fourth sample were washed for 10 minutes by the washing methods of Examples 4 to 6, respectively. Then, the surfaces of the third sample and the fourth sample taken out from the washing liquid were rinsed with running water for 5 minutes, water droplets were removed with an air gun, and then the surface was observed using an optical microscope. By visually observing the images observed by using an optical microscope, it was confirmed that the magnesium silver film was removed from the third sample and the fourth sample in Examples 4 to 5. No residue of magnesium silver film was confirmed. In the column of "evaluation 3" in FIG. 11, "OK" means that the magnesium silver film has been removed from the third sample and the fourth sample as a result of visually observing the images observed by using an optical microscope, and magnesium. Indicates that no residue of the silver film was confirmed.
In Example 6, when the washing time was 10 minutes, the magnesium silver film was not completely removed from the 3rd sample and the 4th sample. When the washing time was 30 minutes, the magnesium silver film was removed from the third sample and the fourth sample, and no residue of the magnesium silver film was confirmed.

Example 7
Evaluation 1 and evaluation 2 were carried out in the same manner as in the case of Example 4. Specifically, a cleaning tank 61 containing the same cleaning liquid as in Example 4 was prepared. Subsequently, an ultrasonic wave having a frequency of 1 MHz and an output of 50 W was applied to the cleaning liquid using an ultrasonic transducer. The area of the ultrasonic transducer was 370 × 250 mm ² . The output density of ultrasonic waves was 0.054 W / cm ² . Subsequently, the sample was immersed in the cleaning solution under the same conditions as in Example 4.

The surface of the sample taken out from the washing liquid was observed using an optical microscope under the same conditions as in the case of Example 1. No holes larger than 10 μm were observed on the surface of the sample. It is considered that the generation of holes was suppressed because the damage to the sample due to cavitation was reduced by increasing the frequency.

In addition, evaluation 3 was carried out in the same manner as in the case of Example 4. Specifically, the third sample and the fourth sample were washed for 10 minutes by the washing method of Example 7. The surfaces of the third sample and the fourth sample taken out from the washing liquid were observed under the same conditions as in the case of Example 4. It was confirmed that the magnesium silver film was removed from the third sample and the fourth sample. No residue of magnesium silver film was confirmed.

Examples 8-13
Evaluation 1 and evaluation 2 were carried out in the same manner as in the case of Example 4 by changing the frequency or output of the ultrasonic wave. The results are shown in FIG. As shown in the column of "evaluation 2" in FIG. 11, cracks were observed in the sample in Examples 10 and 11. The crack is considered to have been generated based on ultrasonic waves. In the cleaning methods of Examples 8, 9 and 13, all of the evaluations 1 and 2 were OK. It is considered that the generation of holes was suppressed because the damage to the sample due to cavitation was reduced by setting the high frequency and low output.

In addition, evaluation 3 was carried out in the same manner as in the case of Example 4. Specifically, the third sample and the fourth sample were washed for 10 minutes by the washing methods of Examples 8, 9 and 13, respectively. The surfaces of the third sample and the fourth sample taken out from the washing liquid were observed under the same conditions as in the case of Example 4. It was confirmed that the magnesium silver film was removed from the third sample and the fourth sample. No residue of magnesium silver film was confirmed.

As can be seen from Examples 7 to 11, the frequency of the ultrasonic wave applied to the cleaning liquid is preferably 50 kHz or higher, and more preferably 100 kHz or higher. As can be seen from Examples 9, 12, and 13, the output density of the ultrasonic waves applied to the cleaning liquid is preferably 0.1 W / cm ² or less, and more preferably 0.085 W / cm ² or less.

Examples 14-18
Evaluation 1 and evaluation 2 were carried out in the same manner as in Example 9 by changing at least one of the iodine concentration and the stripping agent concentration in the cleaning liquid. The results are shown in FIG. In the cleaning methods of Examples 15 to 18, both evaluations 1 and 2 were OK. As can be seen from Examples 9, 14 and 15, the iodine concentration in the washing liquid is preferably less than 40 g / L, more preferably 20 g / L or less. As can be seen from Examples 14 to 18, the iodine concentration of the washing liquid may be 10 g / L or less, 8 g / L or less, or 6 g / L or less. The concentration of the release agent in the cleaning liquid may be 300 g / L or less. It is considered that the generation of holes was suppressed because the cleaning efficiency was reduced by lowering the release agent and iodine concentration of the cleaning liquid. As can be seen from Examples 13 to 18, when the pH of the washing liquid was 4.0 or more, the evaluation 2 was OK. When the pH of the washing liquid was 4.24, the evaluation 1 was NG, and when the pH of the washing liquid was 4.25 or more, the evaluation 1 was also OK. The pH of the cleaning solution is preferably 4.0 or higher, more preferably 4.25 or higher.

In addition, evaluation 3 was carried out in the same manner as in the case of Example 4. Specifically, the third sample and the fourth sample were washed for 10 minutes by the washing methods of Examples 15 to 18, respectively. The surfaces of the third sample and the fourth sample taken out from the washing liquid were observed under the same conditions as in the case of Example 4. It was confirmed that the magnesium silver film was removed from the third sample and the fourth sample. No residue of magnesium silver film was confirmed.

Example 19
Evaluation 1 and evaluation 2 were carried out in the same manner as in Example 9 except that 450 g of potassium iodide was used as the release agent. The results are shown in FIG. As can be seen from Examples 9, 14 to 19, the pH of the washing liquid is preferably 5.00 or less.

Example 20-23
Evaluation 1 and evaluation 2 were carried out in the same manner as in the case of Example 9 by changing the temperature of the cleaning liquid. As shown in FIG. 11, no holes or cracks were observed in Examples 20-23. In Examples 20 to 23, since the temperature of the cleaning liquid is lower than that in Example 9, defects such as holes and cracks are unlikely to occur. Therefore, the evaluation results of Examples 20 to 23 are considered to be appropriate.

As can be seen from the evaluation results of Examples 7 to 11, the higher the frequency of the ultrasonic wave, the less likely it is that defects such as holes and cracks will occur. Therefore, although not shown in FIG. 11, when the temperature of the cleaning liquid is set to 10 ° C. or higher and 20 ° C. or lower and the ultrasonic frequency is set to 200 kHz or higher and 1000 kHz or lower as in Examples 20 to 23, holes and cracks are formed. Is not expected to be observed.

When ultrasonic waves are applied to the cleaning liquid, the cleaning ability is increased, but defects such as holes and cracks are likely to occur. Therefore, although not shown in FIG. 11, when the temperature of the cleaning liquid is set to 10 ° C. and ultrasonic waves are not applied to the cleaning liquid as in Example 23, it is expected that holes and cracks will not be observed.

In addition, evaluation 3 was carried out in the same manner as in the case of Example 9. The results are shown in FIG.

Example 24
The temperature of the cleaning liquid was changed to 18 ° C., and evaluations 1 to 3 were carried out in the same manner as in the case of Example 1. The results are shown in FIG.

Example 25
The iodine concentration of the washing liquid was changed to 10 g / L, and evaluations 1 to 3 were carried out in the same manner as in Example 24. The results are shown in FIG. Regarding evaluation 3, when the washing time was 10 minutes, the magnesium silver film was not completely removed from the 3rd sample and the 4th sample. When the washing time was 30 minutes, the magnesium silver film was removed from the third sample and the fourth sample, and no residue of the magnesium silver film was confirmed.
When the temperature of the washing liquid is 18 ° C., it is expected that the same results as in Examples 24 and 25 will occur in the range of iodine concentration of 10 g / L or more and 20 g / L or less.

Example 26
The iodine concentration of the washing liquid was changed to 10 g / L, and evaluations 1 to 3 were carried out in the same manner as in Example 6. The results are shown in FIG. Regarding evaluation 3, when the washing time was 10 minutes, the magnesium silver film was not completely removed from the 3rd sample and the 4th sample. When the washing time was 30 minutes, the magnesium silver film was removed from the third sample and the fourth sample, and no residue of the magnesium silver film was confirmed.
When the temperature of the washing liquid is 15 ° C., it is expected that the same results as in Examples 6 and 26 will occur in the range of iodine concentration of 10 g / L or more and 20 g / L or less.

4 Cooling plate 5 Magnet 6 Evaporation source 7 Evaporation material 8 Heater 10 Evaporation device 40 Mask device 41 Frame 42 Opening 50 Mask 51 Metal plate 51a First surface 51b Second surface 53 Through hole 56 Defect 60 Cleaning device 61 Cleaning tank 62 Ultrasonic Control device 63 Temperature control device 70 Cleaning liquid 76 Treatment liquid 77 Drying device 100 Organic device 110 Substrate 111 First surface 112 Second surface 115A First element 115B Second element 120 First electrode 130 Organic layer 130A First organic layer 130B Second Organic layer 140 Second electrode 140A First layer 140B Second layer 145 Electrode overlapping region 160 Insulation layer

Claims (14)

It is a cleaning method to clean the mask.
A cleaning step of cleaning the mask by bringing the cleaning liquid into contact with the mask is provided.
The cleaning solution contains potassium iodide and iodine, and contains
The temperature of the cleaning liquid is less than 25 ° C.
A washing method in which the concentration of the iodine in the washing liquid is 20 g / L or less . The cleaning method according to claim 1, wherein the cleaning step includes a dip step of immersing the mask in the cleaning liquid contained in the cleaning tank. The cleaning method according to claim 2, wherein the cleaning step includes an ultrasonic step of applying ultrasonic waves to the cleaning liquid. The cleaning method according to claim 3, wherein the frequency of the ultrasonic wave is 100 kHz or more. The cleaning method according to claim 4, wherein the frequency of the ultrasonic wave is 1 MHz or less. The cleaning method according to any one of claims 1 to 5 , wherein the pH of the cleaning liquid is 5.00 or less. The cleaning method according to any one of claims 1 to 6 , wherein the mask contains an iron alloy containing nickel. The cleaning method according to any one of claims 1 to 7 , wherein the thickness of the mask is 100 μm or less. The cleaning method according to any one of claims 1 to 8 , wherein the cleaning step removes a metal material adhering to the mask. The cleaning method according to claim 9 , wherein the metal material contains magnesium silver. A cleaning solution used to clean masks
Contains potassium iodide and iodine ,
A cleaning solution having a concentration of iodine in the cleaning solution of 20 g / L or less . A cleaning device that cleans masks
Equipped with at least one cleaning tank for accommodating the cleaning liquid,
The cleaning solution contains potassium iodide and iodine, and contains
A cleaning device having a concentration of iodine in the cleaning liquid of 20 g / L or less . The at least one cleaning tank includes a first cleaning tank containing the cleaning liquid and a second cleaning tank containing the cleaning liquid.
The cleaning device according to claim 12 , wherein the cleaning device includes a transport mechanism for transporting the mask from the first cleaning tank to the second cleaning tank. It is a manufacturing method of organic devices.
A second electrode forming step of forming a second electrode by a vapor deposition method using two or more masks in order on an organic layer on the first electrode on a substrate.
A cleaning step of cleaning the mask by bringing a cleaning solution containing potassium iodide and iodine into contact with the mask is provided .
The second electrode forming step is partially formed on the first layer by a step of forming a first layer of the second electrode by a vapor deposition method using the first mask and a vapor deposition method using the second mask. A manufacturing method comprising a step of forming a second layer of the second electrode that overlaps with each other .

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