TW202230644A - 發光二極體封裝結構的製造方法 - Google Patents
發光二極體封裝結構的製造方法 Download PDFInfo
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Abstract
一種電子元件封裝結構包含基板、電子元件、金屬凸塊以及環氧樹脂保護層。基板具有導電層。電子元件具有至少一電極。金屬凸塊位於電極上,且接觸導電層。環氧樹脂保護層包覆於金屬凸塊的周圍。
Description
本發明是關於一種電子元件封裝結構及其製造方法。
發光二極體(Light Emitting Diode, LED)係半導體材料製成之發光元件,可將電能轉換成光,其具有體積小、能量轉換效率高、壽命長、省電等優點,因此廣泛應用於各式電子裝置的光源。
現有增強晶片焊點之可靠性的方法是在回流焊接製程之後採用底部填充(Underfill) 膠材對晶片的底部做填充,使晶片與基板焊墊之間的空隙充滿膠材,從而依靠底部填充膠材來緩衝機械應力對晶片焊點帶來的衝擊。底部填充是一道單獨且複雜之工序,一般在錫膏印刷、元件貼片和回流焊之後,通過點膠設備和固化設備完成底部填充膠材的預熱、點膠和固化,因此工序複雜造成製程時間拉長進而增加成本。
本發明提出一種創新的電子元件封裝結構及其製造方法,解決先前技術的問題。
於本發明的一些實施例中,一種電子元件封裝結構包含基板、電子元件、金屬凸塊以及環氧樹脂保護層。基板具有導電層。電子元件具有至少一電極。金屬凸塊位於電極上,且接觸導電層。環氧樹脂保護層包覆於金屬凸塊的周圍。
於本發明的一些實施例中,至少一電極包含複數電極。
於本發明的一些實施例中,電子元件封裝結構,還包含一氣隙位於該些電極之任二緊鄰者之間。
於本發明的一些實施例中,環氧樹脂保護層延伸至電子元件的底部。
於本發明的一些實施例中,電子元件包含發光二極體芯片、靜電防護積體電路芯片或驅動積體電路芯片。
於本發明的一些實施例中,導電層包含銅層與鈦層。
於本發明的一些實施例中,導電層包含銅層與鉬層。
於本發明的一些實施例中,一種電子元件封裝結構的製造方法包含以下步驟。提供一基板,具有導電層。塗佈環氧助焊劑於導電層上的固晶區域,其中環氧助焊劑包含焊劑、導電金屬粒子以及環氧樹脂。將複數個積體電路芯片定位於固晶區域的助焊劑上,其中每一積體電路芯片的電極具有金屬凸塊。進行回流焊接製程使金屬凸塊焊接於導電層上,且使環氧樹脂環繞密封金屬凸塊外形成保護層。
於本發明的一些實施例中,環氧樹脂佔該環氧助焊劑之75%~90%的體積比。
於本發明的一些實施例中,焊劑於該回流焊接製程中揮發。
綜上所述,本發明之電子元件封裝結構及其製造方法,運用含有適當比例環氧樹脂的助焊劑於電子元件的回流焊接製程上,使金屬凸塊焊接於導電層上,且使環氧樹脂環繞密封金屬凸塊外形成保護層。環氧樹脂保護層亦可延伸至電子元件的底部或底面。本發明提供了增強晶片焊點可靠性的方法,不需要採用底部填充(Underfill)工藝,從而降低設備成本投入,提高製造效率。
以下將以實施方式對上述之說明作詳細的描述,並對本發明之技術方案提供更進一步的解釋。
為了使本發明之敘述更加詳盡與完備,可參照所附之圖式及以下所述各種實施例,圖式中相同之號碼代表相同或相似之元件。另一方面,眾所週知的元件與步驟並未描述於實施例中,以避免對本發明造成不必要的限制。
於實施方式與申請專利範圍中,涉及『電性連接』之描述,其可泛指一元件透過其他元件而間接電氣耦合至另一元件,或是一元件無須透過其他元件而直接電連結至另一元件。
於實施方式與申請專利範圍中,除非內文中對於冠詞有所特別限定,否則『一』與『該』可泛指單一個或複數個。
請參照第1~2圖,其繪示依照本發明一些實施例之一種電子元件封裝結構的製造方法之剖面圖。在第1圖中,提供基板102供複數個電子元件106焊接於其表面上。在本發明的一些實施例中,基板102具有導電層102a以及固晶區域102b,導電層102a延伸至固晶區域102b供電子元件106電性連接。在本發明的一些實施例中,基板102可以是平板,例如是玻璃印刷電路板、BT(Bismaleimide Triazine)印刷電路板、EMC(Electro Magnetic Compatibility)印刷電路板、SMC(Sheet Molding Compound)印刷電路板、陶瓷電路板、FR4印刷電路板或藍寶石(Sapphire)板等。在本發明的一些實施例中,導電層102a可以是金屬鍍層,但不以此為限。在本發明的一些實施例中,在導電層102a上的固晶區域102b塗佈環氧助焊劑112。環氧助焊劑112包含焊劑、導電金屬粒子112b以及環氧樹脂。在本發明的一些實施例中,環氧樹脂佔環氧助焊劑112之75%~90%的體積比。此環氧樹脂的體積比有助於電子元件106焊接於基板102上後,固化後的環氧樹脂能充分的環繞密封焊接點且牢固地將電子元件106固定於基板102上。當環氧樹脂佔環氧助焊劑112低於75%的體積比時,環氧樹脂的量不足以環繞密封焊接點。當環氧樹脂佔環氧助焊劑112高於90%的體積比時,焊劑與導電金屬粒子的含量佔比太少,而不利於焊接的成果。在本發明的一些實施例中,環氧助焊劑112亦可包含其他填充材料,例如奈米級二氧化矽或氮化鋁等增加導熱率之粉體材料。
在第2圖中,將複數個電子元件106的積體電路芯片定位於固晶區域102b的環氧助焊劑112上,再進行回流焊接製程使積體電路芯片焊接於導電層102a上。在本發明的一些實施例中,電子元件106可以是發光二極體,當複數個發光二極體都焊接於基板102上後,即形成燈條模組200。
請參照第3圖,其繪示第2圖之部份放大圖的電子元件封裝結構的剖面圖。放大圖的電子元件封裝結構100a之電子元件106具有電極106a與電極106b,且具有金屬凸塊108a與金屬凸塊108b分別設置於電極106a與電極106b上。在進行回流焊接製程後,環氧助焊劑其中的環氧樹脂環繞密封金屬凸塊108a與金屬凸塊108b外形成環氧樹脂保護層112a,藉以使金屬凸塊108a與金屬凸塊108b隔離於外界的水氣或侵蝕。當焊點遭受機械衝擊時,可以起到緩衝機械應力提高焊點機械強度的作用,因此不需要額外底部填充(Underfill)製程,從而可以減少製程,降低設備成本並提高製造效率。在本發明的一些實施例中,環氧助焊劑其中的焊劑於回流焊接製程中揮發殆儘。在本發明的一些實施例中,電子元件106可以是發光二極體芯片或驅動積體電路芯片,但不以此為限。
在本發明的一些實施例中,環氧樹脂保護層112a可因足量環氧樹脂而延伸至電子元件106的底部或底面106c。在本發明的一些實施例中,環氧助焊劑112其中適量的環氧樹脂可形成氣隙110於電極106a與電極106b之間,或於金屬凸塊108a與金屬凸塊108b之間。在本發明的一些實施例中,氣隙110被環氧樹脂保護層112a所密封包覆。習知的膠材底部填充(Underfill)製程在電子元件106的下方並不會產生氣隙,也不會在金屬凸塊周圍形成密封的環氧樹脂保護層。
請參照第4圖,其繪示依照本發明另一實施例之一種電子元件封裝結構的剖面圖。電子元件封裝結構100b不同於電子元件封裝結構100a的地方在於:環氧樹脂僅環繞密封金屬凸塊108a與金屬凸塊108b外形成環氧樹脂保護層112a,而未延伸至電子元件106的底部或底面106c。在本發明的一些實施例中,氣隙110仍形成於電極106a與電極106b之間,或於金屬凸塊108a與金屬凸塊108b之間,但未被環氧樹脂保護層112a完全包覆。除此之外,電子元件封裝結構100b的其他組態基本上類似於電子元件封裝結構100a,而不再贅述。
請參照第5圖,其繪示依照本發明又一實施例之一種電子元件封裝結構的剖面圖。電子元件封裝結構100c不同於電子元件封裝結構100a的地方在於:導電層包含金屬層102c與金屬層102d。在本發明的一些實施例中,金屬層102c可以是銅層藉以提升與金屬凸塊的接合性,而金屬層102d可以是鈦層藉以提升與基板102(例如玻璃印刷電路板)的接合性。在本發明的一些實施例中,金屬層102c可以是銅層藉以提升與金屬凸塊的接合性,而金屬層102d可以是鉬層藉以提升與基板102(例如玻璃印刷電路板)的接合性。除此之外,電子元件封裝結構100c的其他組態基本上類似於電子元件封裝結構100a,而不再贅述。
請參照第6圖,其係繪示依照本發明再一實施例之一種電子元件封裝結構的剖面圖。電子元件封裝結構100d不同於電子元件封裝結構100a的地方在於:電子元件106’的二個電極106a與電極106d分別位於二相對的表面,只有電極106a設置有金屬凸塊108,電極106d是以打線方式電性連接至外部。在進行回流焊接製程後,環氧助焊劑其中的環氧樹脂環繞密封金屬凸塊108外形成環氧樹脂保護層112a,藉以使金屬凸塊108隔離於外界的水氣或侵蝕。在本發明的一些實施例中,電子元件106’可以是靜電防護積體電路芯片,但不以此為限。除此之外,電子元件封裝結構100d的其他組態基本上類似於電子元件封裝結構100a,而不再贅述。
請參照第7、8圖,第7圖繪示依照本發明一些實施例之一種電子元件封裝結構的剖面電子顯微照片;第8圖繪示第7圖之部份放大照片。此二圖式展示環氧助焊劑確實能於回流焊接製程後,將環氧樹脂環繞密封金屬凸塊108外形成環氧樹脂保護層,或延伸至電子元件106的底部或底面。
本發明之電子元件封裝結構及其製造方法,運用含有適當比例環氧樹脂的助焊劑於電子元件的回流焊接製程上,使金屬凸塊焊接於導電層上,且使環氧樹脂環繞密封金屬凸塊外形成保護層。環氧樹脂保護層亦可延伸至電子元件的底部或底面。本發明提供了增強晶片焊點可靠性的解決方案,不需要採用底部填充(Underfill)工藝,從而降低設備成本投入,提高製造效率。
雖然本發明已以實施方式揭露如上,然其並非用以限定本發明,任何熟習此技藝者,於不脫離本發明之精神和範圍內,當可作各種之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
為讓本發明之上述和其他目的、特徵、優點與實施例能更明顯易懂,所附符號之說明如下:
100a:電子元件封裝結構
100b:電子元件封裝結構
100c:電子元件封裝結構
100d:電子元件封裝結構
102:基板
102a:導電層
102b:固晶區域
102c:金屬層
102d:金屬層
106:電子元件
106’:電子元件
106a:電極
106b:電極
106c:底面
106d:電極
108:金屬凸塊
108a:金屬凸塊
108b:金屬凸塊
112:環氧助焊劑
112a:環氧樹脂保護層
112b:金屬粒子
110:氣隙
200:燈條模組
為讓本發明之上述和其他目的、特徵、優點與實施例能更明顯易懂,所附圖式之說明如下:
第1~2圖係繪示依照本發明一些實施例之一種電子元件封裝結構的製造方法之剖面圖;
第3圖係繪示第2圖之部份放大圖的電子元件封裝結構的剖面圖;
第4圖係繪示依照本發明另一實施例之一種電子元件封裝結構的剖面圖;
第5圖係繪示依照本發明又一實施例之一種電子元件封裝結構的剖面圖;
第6圖係繪示依照本發明再一實施例之一種電子元件封裝結構的剖面圖;
第7圖係繪示依照本發明一些實施例之一種電子元件封裝結構的剖面電子顯微照片;以及
第8圖係繪示第7圖之部份放大照片。
國內寄存資訊(請依寄存機構、日期、號碼順序註記)
無
國外寄存資訊(請依寄存國家、機構、日期、號碼順序註記)
無
100b:電子元件封裝結構
102:基板
102a:導電層
106:電子元件
106a:電極
106b:電極
106c:底面
108a:金屬凸塊
108b:金屬凸塊
112a:環氧樹脂保護層
110:氣隙
Claims (10)
- 一種電子元件封裝結構,包含: 一基板,具有導電層; 一電子元件,具有至少一電極; 一金屬凸塊,位於該電極上,且接觸該導電層; 一環氧樹脂保護層,包覆於該金屬凸塊的周圍。
- 如請求項1所述之電子元件封裝結構,其中該至少一電極包含複數電極。
- 如請求項2所述之電子元件封裝結構,還包含一氣隙位於該些電極之任二緊鄰者之間。
- 如請求項3所述之電子元件封裝結構,其中該環氧樹脂保護層延伸至該電子元件的底部。
- 如請求項1所述之電子元件封裝結構,其中該電子元件包含發光二極體芯片、靜電防護積體電路芯片或驅動積體電路芯片。
- 如請求項1所述之電子元件封裝結構,其中該導電層包含銅層與鈦層。
- 如請求項1所述之電子元件封裝結構,其中該導電層包含銅層與鉬層。
- 一種電子元件封裝結構的製造方法,包含: 提供一基板,具有導電層; 塗佈環氧助焊劑於該導電層上的固晶區域,其中該環氧助焊劑包含焊劑、導電金屬粒子以及環氧樹脂; 將複數個積體電路芯片定位於該固晶區域的該助焊劑上,其中每一該積體電路芯片的電極具有金屬凸塊;以及 進行回流焊接製程使該金屬凸塊焊接於該導電層上,且使該環氧樹脂環繞密封該金屬凸塊外形成保護層。
- 如請求項8所述之製造方法,其中該環氧樹脂佔該環氧助焊劑之75%~90%的體積比。
- 如請求項8所述之製造方法,其中該焊劑於該回流焊接製程中揮發。
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