TW202224008A - Substrate processing apparatus and substrate processing method - Google Patents

Abstract

The present invention provides a substrate processing apparatus and a substrate processing method. A substrate processing apparatus (100) includes a processing tank (2), a substrate holder (130), an air bubble supplying member (4), a processing liquid replenishing member (5), and a controller (111). The processing tank (2) stores a processing liquid (LQ). The substrate holding member (130) holds a substrate (W) in the processing tank (2) to immerse the substrate (W) in the processing liquid (LQ) stored in the processing tank (2). The air bubble supplying member (4) supplies air bubbles to the surface of the substrate (W) immersed in the processing liquid (LQ). The processing liquid replenishing member (5) replenishes the processing tank (2) with the processing liquid (LQ). The controller (111) causes replenishment with the processing liquid (LQ) from the processing liquid replenishing member (5) according to a stepwise or gradual decrease in the amount of air bubbles supplied form the air bubble supplying member (4).

Description

Substrate processing apparatus and substrate processing method

The present invention relates to a substrate processing apparatus and a substrate processing method.

There is known a substrate processing apparatus that processes a substrate by immersing the substrate in a processing liquid stored in a processing tank. One of such substrate processing apparatuses supplies air bubbles to the processing liquid stored in the processing tank during the processing of the substrate (for example, refer to Patent Document 1). [Prior Art Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2006-100493

[Problems to be Solved by Invention]

However, in a substrate processing apparatus that supplies bubbles to the processing liquid during the substrate processing, the liquid level of the processing liquid decreases when the supply of the bubbles is stopped after the substrate processing is completed. After the substrate processing is completed, a part of the substrate is exposed from the liquid level of the processing liquid. When a part of the substrate is exposed from the liquid level of the processing liquid, the time for this part to be in contact with the processing liquid becomes shorter than that of other parts. Therefore, the time in which the processing liquid is contacted in the plane of the substrate varies. As a result, the in-plane uniformity of the substrate may decrease.

The present invention has been made in view of the above-mentioned problems, and an object thereof is to provide a substrate processing apparatus and a substrate processing method which are less likely to cause variations in the time when the in-plane contact with the processing liquid occurs. [Technical means to solve problems]

According to an aspect of the present invention, a substrate processing apparatus includes a processing tank, a substrate holding portion, a bubble supplying member, a processing liquid replenishing member, and a control portion. The above-mentioned treatment tank stores a treatment liquid. The said board|substrate holding part holds a board|substrate in the said processing tank, and makes the said board|substrate immerse in the said processing liquid stored in the said processing tank. The air bubble supply member supplies air bubbles to the surface of the substrate immersed in the processing liquid. The treatment liquid replenishing means replenishes the treatment liquid in the treatment tank. The control unit replenishes the processing liquid from the processing liquid replenishing means in accordance with the stepwise or stepwise reduction in the amount of the bubbles supplied from the bubble supplying means.

In one embodiment, the above-mentioned substrate processing apparatus further includes a memory unit. The memory unit stores data that defines a relationship between a physical quantity corresponding to the amount of the air bubbles supplied from the air bubble supply means and the amount of the processing liquid replenished from the processing liquid replenishing means. The said control part controls the quantity of the said processing liquid replenished from the said processing liquid replenishment means based on the said data.

In one embodiment, the substrate processing apparatus further includes a gas supply pipe and a flow rate adjustment unit. The gas supply pipe supplies gas to the bubble supply member. The said flow rate adjustment part adjusts the flow rate of the said gas which flows through the said gas supply piping.

In one embodiment, the substrate processing apparatus further includes a processing liquid replenishing unit that supplies the processing liquid to the processing liquid replenishing member. The said processing liquid replenishment part has a replenishment tank, a replenishment piping, a heating part, and a filter. The above-mentioned replenishment tank stores the above-mentioned treatment liquid. The said replenishment piping distribute|circulates the said process liquid to the said process liquid replenishment means. The said heating part adjusts the temperature of the said processing liquid. The above-mentioned filter filters the above-mentioned treatment liquid.

In one embodiment, the processing tank includes an inner tank and an outer tank. The inner tank stores the treatment liquid. The above-mentioned outer tank collects the above-mentioned treatment liquid overflowing from the above-mentioned inner tank. The said board|substrate holding part holds the said board|substrate in the said inner groove.

In one embodiment, the above-mentioned substrate processing apparatus further includes a circulation pipe and a processing liquid supply member. The said circulation piping circulates the said processing liquid between the said outer tank and the said inner tank. The processing liquid supply means communicates with the circulation piping, and supplies the processing liquid to the inner tank.

In one embodiment, the treatment liquid replenishing means replenishes the treatment liquid in the outer tank.

According to another aspect of the present invention, a substrate processing method includes the steps of: immersing a substrate in a processing liquid stored in a processing tank; supplying air bubbles to the surface of the substrate immersed in the processing liquid; and supplying the air bubbles The amount is gradually or gradually reduced, and the above-mentioned treatment is supplemented to the above-mentioned treatment tank. [Effect of invention]

According to the substrate processing apparatus and the substrate processing method of the present invention, the time of contacting the processing liquid in the surface of the substrate is less likely to vary.

Hereinafter, embodiments of the substrate processing apparatus and the substrate processing method of the present invention will be described with reference to the accompanying drawings ( FIGS. 1 to 13 ). However, the present invention is not limited to the following embodiments. In addition, regarding the part where description overlaps, description may be abbreviate|omitted suitably. In addition, the same reference signs are attached to the same or corresponding parts in the drawings, and the description thereof will not be repeated.

In this specification, the X direction, the Y direction, and the Z direction which are orthogonal to each other may be described in order to facilitate understanding. Typically, the X direction and the Y direction are parallel to the horizontal direction, and the Z direction is parallel to the vertical direction. However, the definitions of these directions are not intended to limit the directions when the substrate processing apparatus of the present invention is used and the directions when the substrate processing method of the present invention is executed.

The "substrate" in the embodiment of the present invention can be applied to semiconductor wafers, glass substrates for photomasks, glass substrates for liquid crystal displays, glass substrates for plasma displays, substrates for FED (Field Emission Display), and optical discs. Various substrates such as substrates, substrates for magnetic disks, and substrates for magneto-optical disks. Hereinafter, the embodiment of the present invention will be described mainly by taking a substrate processing apparatus and a substrate processing method used in processing a disc-shaped semiconductor wafer as an example, but it can also be applied to the processing of various substrates exemplified above. Moreover, regarding the shape of a board|substrate, various shapes can also be applied.

First, the substrate processing apparatus 100 of the present embodiment will be described with reference to FIGS. 1( a ) and 1 ( b ). FIGS. 1( a ) and 1 ( b ) are diagrams showing the substrate processing apparatus 100 of the present embodiment. Specifically, FIG. 1( a ) shows the substrate processing apparatus 100 before a plurality of substrates W are put into the processing tank 2 . FIG. 1( b ) shows the substrate processing apparatus 100 after a plurality of substrates W have been put into the processing tank 2 .

As shown in FIGS. 1( a ) and 1 ( b ), the substrate processing apparatus 100 of this embodiment is of a batch type. Therefore, the substrate processing apparatus 100 processes the plurality of substrates W together with the processing liquid LQ. For example, the plurality of substrates W are subjected to at least one of etching treatment, surface treatment, characteristic imparting, treatment film formation, at least partial removal of the film, and cleaning with the treatment liquid LQ.

For example, when a plurality of substrates W are etched with the processing liquid LQ, the processing liquid LQ may be a liquid containing phosphoric acid. The liquid containing phosphoric acid is, for example, a phosphoric acid aqueous solution, a liquid obtained by adding an additive to the phosphoric acid aqueous solution, a mixed acid containing phosphoric acid, or a mixed acid containing phosphoric acid and an additive.

The substrate W (semiconductor wafer) is, for example, a substrate for manufacturing a three-dimensional flash memory (eg, a three-dimensional NAND (Not AND, inverse) flash memory) of a semiconductor product having a three-dimensional structure. Such a substrate has, for example, a laminated structure in which silicon oxide films and silicon nitride films are alternately laminated on the surface, and the laminated structure has a three-dimensional concave-convex shape. When the silicon nitride film is selectively etched with the processing liquid LQ for such a laminated structure, a liquid containing phosphoric acid is used as the processing liquid LQ. When a silicon nitride film is etched with a liquid containing phosphoric acid, silicon is formed as a reactant. Silicon is eluted into the treatment liquid LQ (liquid containing phosphoric acid), but the concentration of the eluted silicon is uneven due to the three-dimensional concavo-convex shape. As a result, the etch selectivity of silicon nitride and silicon oxide is affected. In addition, as long as the substrate W can be processed, the type of the processing liquid LQ is not particularly limited. In addition, the temperature of the processing liquid LQ is also not particularly limited.

Hereinafter, the structure of the substrate processing apparatus 100 of this embodiment is demonstrated with reference to FIG.1(a) and FIG.1(b). As shown in FIGS. 1( a ) and 1 ( b ), the substrate processing apparatus 100 includes a processing tank 2 , a control device 110 , a lifting portion 120 , and a substrate holding portion 130 .

The treatment tank 2 stores the treatment liquid LQ. The substrate holding unit 130 holds a plurality of substrates W in the processing tank 2 , and immerses the plurality of substrates W in the processing liquid LQ stored in the processing tank 2 . For example, the substrate holding unit 130 holds the substrates W on a batch basis. One batch includes 25 substrates W, for example.

In this embodiment, the processing tank 2 has an inner tank 21 and an outer tank 22 . The outer groove 22 surrounds the inner groove 21 . In other words, the processing tank 2 has a double tank configuration. Both the inner groove 21 and the outer groove 22 have upper openings that are opened upward.

Both the inner tank 21 and the outer tank 22 store the processing liquid LQ. Specifically, the outer tank 22 collects and stores the treatment liquid LQ overflowing from the inner tank 21 . The substrate holding portion 130 holds a plurality of substrates W in the inner groove 21 . Therefore, the plurality of substrates W are immersed in the processing liquid LQ in the inner tank 21 .

In this embodiment, the substrate holding portion 130 has a plurality of holding rods 131 and a main body plate 132 . The main body plate 132 is a plate-like member, and extends in the vertical direction (Z direction). The plurality of holding rods 131 extend in the horizontal direction (Y direction) from one main surface of the main body plate 132 . In addition, in this embodiment, the board|substrate holding part 130 has three holding bars 131 (refer FIG. 2).

The plurality of substrates W are held by the plurality of holding bars 131 . In detail, the plurality of holding rods 131 respectively have a plurality of grooves opened upward. A plurality of grooves are formed at intervals along the longitudinal direction of the holding rod 131 . The substrate W is held by the plurality of holding bars 131 by fitting the lower edge of the substrate W into each groove of the plurality of holding bars 131 .

The plurality of substrates W held by the substrate holding portion 130 are arranged at intervals along the Y direction. That is, the plurality of substrates W are arranged in a row along the Y direction. In addition, the plurality of substrates W are respectively held by the substrate holding portion 130 in a posture substantially parallel to the XZ plane. That is, the substrate W is held by the plurality of holding bars 131 in a standing posture (vertical posture).

The control device 110 controls the operation of each part of the substrate processing apparatus 100 . The control device 110 controls, for example, the operation of the elevating part 120 . The elevating part 120 is controlled by the control device 110 to elevate the substrate holding part 130 . The substrate holding portion 130 is moved up and down by the lifting portion 120 , so that the substrate holding portion 130 moves vertically upward or vertically downward in a state in which the plurality of substrates W are held. The elevating portion 120 has a drive source and an elevating mechanism, and the substrate holding portion 130 is elevated and lowered by driving the elevating mechanism by the drive source. The drive source includes, for example, a motor. The lift mechanism includes, for example, a rack and pinion mechanism or a ball screw.

More specifically, the raising/lowering part 120 raises and lowers the substrate holding part 130 between the processing position (the position shown in FIG. 1( b )) and the retracted position (the position shown in FIG. 1( a )). As shown in FIG. 1( b ), when the substrate holding portion 130 is lowered vertically downward (Z direction) while holding the plurality of substrates W and moved to the processing position, the plurality of substrates W are put into the processing tank 2 . Specifically, the plurality of substrates W held by the substrate holding portion 130 are moved into the inner groove 21 . As a result, the plurality of substrates W are immersed in the processing liquid LQ in the inner tank 21, and the plurality of substrates W are processed by the processing liquid LQ. On the other hand, as shown in FIG. 1( a ), when the substrate holding portion 130 moves to the retracted position, the plurality of substrates W held by the substrate holding portion 130 move to the top of the processing tank 2 , and the plurality of substrates W are removed from the processing liquid Lift in LQ.

Next, the configuration of the substrate processing apparatus 100 of the present embodiment will be described with reference to FIG. 2 . FIG. 2 is a diagram showing the configuration of the substrate processing apparatus 100 according to the present embodiment. FIG. 2 shows a cross section of the processing tank 2 .

As shown in FIG. 2 , the substrate processing apparatus 100 further includes a plurality of processing liquid supply members 3 , a plurality of bubble supply members 4 , a processing liquid replenishing member 5 , a circulation part 30 , a gas supplying part 40 , and a processing liquid replenishing part 50 . Furthermore, in the present embodiment, the substrate processing apparatus 100 includes two processing liquid supply members 3 , but the substrate processing apparatus 100 may include three or more processing liquid supply members 3 . In addition, the substrate processing apparatus 100 includes four air bubble supply members 4 , but the substrate processing apparatus 100 may include two, three, or five or more air bubble supply members 4 .

The plurality of processing liquid supply members 3 supply the processing liquid LQ to the inner tank 21 . In the present embodiment, the plurality of treatment liquid supply members 3 are arranged in the inner tank 21 . Specifically, the plurality of processing liquid supply members 3 are arranged on the bottom 21 a side of the inner tank 21 . Furthermore, the plurality of treatment liquid supply members 3 may or may not be in contact with the bottom portion 21a of the inner tank 21 .

Each processing liquid supply member 3 is a hollow tubular member. A plurality of processing liquid discharge ports P1 are formed in each processing liquid supply member 3, and the processing liquid LQ is discharged from each processing liquid discharge port P1. As a result, the treatment liquid LQ is supplied into the inner tank 21 from the plurality of treatment liquid supply members 3 . In addition, the processing liquid discharge port P1 is, for example, a tie hole.

The plurality of air bubble supply members 4 supply air bubbles to the respective surfaces of the plurality of substrates W immersed in the processing liquid LQ. A plurality of air bubble supply members 4 are arranged in the inner tank 21 . Specifically, the plurality of bubble supply members 4 are arranged below the plurality of substrates W immersed in the processing liquid LQ. For example, the plurality of air bubble supply members 4 are arranged on the bottom portion 21 a side of the inner tank 21 . Furthermore, the plurality of air bubble supply members 4 may or may not be in contact with the bottom portion 21a of the inner tank 21 .

More specifically, each air bubble supply member 4 supplies air bubbles upward, that is, toward the liquid surface of the processing liquid LQ. Each air bubble supply member 4 is a hollow tubular member. A plurality of gas supply ports G are formed in each air bubble supply member 4 , and by blowing gas from each gas supply port G, air bubbles are supplied to the plurality of substrates W immersed in the processing liquid LQ in the inner tank 21 . The gas supply port G is, for example, a tie hole. The gas is, for example, an inert gas. The inert gas is, for example, nitrogen or argon.

In addition, the structure and material of the air bubble supply member 4 are not particularly limited as long as the air bubble supply member 4 can supply air bubbles to the processing liquid LQ. For example, the air bubble supply member 4 may be a tubular porous member. Alternatively, the air bubble supply member 4 may have a tubular member and a porous member. When the air bubble supply member 4 has a porous member, air bubbles are generated from the porous member.

The treatment liquid replenishing means 5 replenishes the treatment liquid LQ into the treatment tank 2 . In the present embodiment, the treatment liquid replenishing member 5 replenishes the treatment liquid LQ to the outer tank 22 . Moreover, in this embodiment, the process liquid replenishing member 5 is arrange|positioned in the outer tank 22. More specifically, the treatment liquid replenishing member 5 is arranged on the bottom 22 a side of the outer tank 22 . Furthermore, the treatment liquid replenishing member 5 may or may not be in contact with the bottom portion 22a of the outer tank 22 .

The treatment liquid replenishing member 5 is a hollow tubular member. In the present embodiment, the treatment liquid replenishing member 5 extends in the Y direction (the depth direction of the drawing in FIG. 2 ). A plurality of processing liquid discharge ports P2 are formed in the processing liquid replenishing member 5, and the processing liquid LQ is discharged from each processing liquid discharge port P2. As a result, the treatment liquid LQ is replenished into the outer tank 22 from the treatment liquid replenishing member 5 . The plurality of processing liquid discharge ports P2 of the processing liquid replenishing member 5 are formed, for example, at equal intervals in the Y direction. The processing liquid discharge port P2 is, for example, a tie hole.

Furthermore, in the present embodiment, one processing liquid replenishing member 5 is provided in the substrate processing apparatus 100 , but the substrate processing apparatus 100 may include a plurality of processing liquid replenishing members 5 .

The circulation unit 30 circulates the processing liquid LQ stored in the processing tank 2 between the inner tank 21 and the outer tank 22 , and supplies the processing liquid LQ to each processing liquid supply member 3 . The processing liquid LQ is supplied to each processing liquid supply member 3 by the circulation portion 30 , and the processing liquid LQ is supplied into the inner tank 21 from each processing liquid supply member 3 .

The gas supply unit 40 supplies gas to each of the bubble supply members 4 . Gas is supplied to each bubble supply member 4 by the gas supply part 40, and bubbles are supplied from each bubble supply member 4 to each surface of the plurality of substrates W immersed in the processing liquid LQ.

Specifically, the gas supply unit 40 has a gas supply pipe 41 . The gas supply piping 41 supplies gas to each bubble supply member 4 . Specifically, the gas supply piping 41 circulates the gas to each of the bubble supply members 4 . As a result, gas flows into each of the bubble supply members 4 , and bubbles are supplied to the processing liquid LQ stored in the inner tank 21 from the plurality of gas supply ports G of each of the bubble supply members 4 .

The processing liquid replenishing unit 50 supplies the processing liquid LQ to the processing liquid replenishing member 5 . The processing liquid LQ is supplied to the processing liquid replenishing member 5 by the processing liquid replenishing portion 50 , and the processing liquid LQ is replenished into the processing tank 2 (in this embodiment, the outer tank 22 ) from the processing liquid replenishing member 5 .

Specifically, the processing liquid replenishing part 50 has the replenishing piping 51 . The replenishment piping 51 circulates the treatment liquid LQ to the treatment liquid replenishment member 5 . As a result, the processing liquid LQ flows into the processing liquid replenishing member 5 , and the processing liquid LQ is replenished into the outer tank 22 from the plurality of processing liquid discharge ports P2 of the processing liquid replenishing member 5 .

Furthermore, the height of the upper end of the side wall of the inner slot 21 (the upper edge of the inner slot 21 ) is lower than the height of the upper end of the side wall of the outer slot 22 (the upper edge of the outer slot 22 ). Therefore, the processing liquid LQ overflowing from the inner tank 21 does not overflow from the outer tank 22 . Therefore, the processing liquid LQ does not overflow from the processing tank 2 .

Next, the circulation unit 30 will be further described with reference to FIG. 2 . As shown in FIG. 2 , the circulation unit 30 includes a circulation piping 31 , a circulation pump 32 , a circulation heating unit 33 , a circulation filter 34 , a circulation maximum flow rate adjustment valve 35 , and an on-off valve 36 .

The circulation piping 31 circulates the processing liquid LQ between the outer tank 22 and the inner tank 21 . Specifically, one end of the circulation piping 31 is connected to the outer tank 22 , and the processing liquid LQ is caused to flow into the circulation piping 31 from the outer tank 22 . The plurality of processing liquid supply members 3 communicate with a circulation pipe 31 , and the circulation pipe 31 circulates the processing liquid LQ to the plurality of processing liquid supply members 3 .

The circulation pump 32 is interposed in the circulation piping 31 . The circulation pump 32 drives the processing liquid LQ by the pressure of the fluid, and circulates the processing liquid LQ through the circulation piping 31 . As a result, the processing liquid LQ flows from the outer tank 22 to each processing liquid supply member 3 via the circulation piping 31 , and the processing liquid LQ is discharged into the inner tank 21 from the plurality of processing liquid discharge ports P1 of each processing liquid supply member 3 . That is, the processing liquid LQ is supplied into the inner tank 21 from each processing liquid supply member 3 . Further, by discharging the processing liquid LQ into the inner tank 21 from each processing liquid supply member 3 , the processing liquid LQ flows (overflows) from the inner tank 21 toward the outer tank 22 through the upper end surface of the side wall of the inner tank 21 .

The circulation heating unit 33 and the circulation filter 34 are interposed in the circulation piping 31 . The circulation heating unit 33 adjusts the temperature of the treatment liquid LQ flowing through the circulation pipe 31 by heating the treatment liquid LQ flowing through the circulation pipe 31 . The circulation filter 34 filters the treatment liquid LQ flowing through the circulation pipe 31 and removes foreign substances from the treatment liquid LQ flowing through the circulation pipe 31 .

The circulation maximum flow rate adjustment valve 35 is interposed in the circulation piping 31 . The circulation maximum flow rate adjustment valve 35 adjusts the maximum flow rate of the treatment liquid LQ flowing through the circulation pipe 31 . Specifically, the maximum flow rate of the treatment liquid LQ flowing through the circulation piping 31 is limited by the opening ratio of the circulation maximum flow rate adjustment valve 35 . The circulating maximum flow rate adjustment valve 35 is, for example, a needle valve.

The on-off valve 36 is interposed in the circulation piping 31 . The on-off valve 36 opens and closes the flow path of the circulation piping 31 . Specifically, when the on-off valve 36 is opened, the processing liquid LQ flows to each processing liquid supply member 3 through the flow path of the circulation pipe 31 . As a result, the processing liquid LQ is discharged from each processing liquid supply member 3 . On the other hand, when the on-off valve 36 is closed, the flow of the processing liquid LQ is blocked, and the discharge of the processing liquid LQ by each processing liquid supply member 3 is stopped. The on-off valve 36 is, for example, a solenoid valve. The on-off valve 36 is controlled by the control device 110 .

Next, the control device 110 will be described with reference to FIG. 2 . As shown in FIG. 2 , the control device 110 includes a control unit 111 and a memory unit 112 .

The control unit 111 has a processor. For example, the control unit 111 includes a CPU (Central Processing Unit, central processing unit) or an MPU (Micro Processing Unit, micro processing unit). Alternatively, the control unit 111 may have a general-purpose computing computer. The control unit 111 controls the operation of each unit of the substrate processing apparatus 100 based on the computer program and data stored in the memory unit 112 . For example, the control unit 111 controls the circulation unit 30 , the gas supply unit 40 , the treatment liquid replenishment unit 50 , and the lift unit 120 . Moreover, the control part 111 has a timer function, and measures the time which elapsed after the some board|substrates W were immersed in the process liquid LQ.

The memory unit 112 stores data and computer programs. The data includes process recipe data. The process recipe data contains information representing a plurality of process recipes. The plurality of process recipes respectively define the processing content and processing sequence of the substrate W. FIG. The memory unit 112 has a main memory device. The main memory device is, for example, a semiconductor memory. The memory unit 112 may further have an auxiliary memory device. The auxiliary memory device includes, for example, at least one of a semiconductor memory and a hard disk drive. The memory 112 may also include removable media.

In the present embodiment, the control unit 111 replenishes the processing liquid LQ to the outer tank 22 from the processing liquid replenishing means 5 in response to the decrease in the amount of bubbles supplied from the plurality of bubble supplying means 4 . Hereinafter, the amount of air bubbles supplied from the plurality of air bubble supply members 4 may be referred to as the "bubble supply amount".

Specifically, when the plurality of substrates W are immersed in the processing liquid LQ stored in the inner tank 21 , the control unit 111 supplies air bubbles from the plurality of air bubble supply members 4 . Then, after the plurality of substrates W are immersed in the processing liquid LQ stored in the inner tank 21, after a predetermined period of time (hereinafter, sometimes referred to as "processing time") has elapsed until the supply of the bubbles is stopped, the bubbles are allowed to flow. Supply is reduced in stages. In addition, the control unit 111 replenishes the processing liquid LQ to the outer tank 22 from the processing liquid replenishing member 5 in response to the timing when the air bubble supply amount decreases stepwise.

More specifically, the control unit 111 replenishes the processing liquid LQ from the processing liquid replenishing means 5 to the outer tank 22 so as to maintain a state in which all parts of the substrates W are immersed in the processing liquid LQ stored in the inner tank 21 . . In other words, the processing liquid LQ is replenished to the outer tank 22 from the processing liquid replenishing member 5 so that the liquid level position of the processing liquid LQ stored in the inner tank 21 is maintained above each substrate W.

According to the present embodiment, the processing liquid LQ is replenished into the outer tank 22 from the processing liquid replenishing means 5 in accordance with the stepwise reduction in the supply amount of the bubbles. Therefore, even if the supply of the bubbles is stopped, the substrates W are not replenished from the processing liquid LQ. The liquid level is exposed. Therefore, there is no variation in the time in which the processing liquid LQ is brought into contact with the in-plane surface of the substrate W. As shown in FIG. Therefore, the in-plane uniformity of the substrate W is less likely to decrease.

Furthermore, the circulation unit 30 also circulates the processing liquid LQ when the processing liquid LQ is replenished from the processing liquid replenishing member 5 to the outer tank 22 . In the present embodiment, the flow rate of the treatment liquid LQ flowing through the circulation pipe 31 is larger than the flow rate of the treatment liquid LQ flowing through the supplementary pipe 51 . Therefore, it is less likely that the processing liquid LQ overflows from the processing tank 2 because the processing liquid LQ is replenished into the outer tank 22 from the processing liquid replenishing member 5 .

Next, the relationship between the air bubble supply amount and the replenishment amount Y of the processing liquid LQ will be described with reference to FIG. 2 , FIG. 3( a ), and FIG. 3( b ). Here, the replenishment amount Y represents the amount of the treatment liquid LQ replenished into the outer tank 22 from the treatment liquid replenishment member 5 . FIG.3(a) is a graph which shows an example of the flow rate of the gas which flows through the gas supply piping 41 in the period until the supply of bubbles is stopped after the processing time. FIG. 3( b ) is a graph showing an example of the flow rate of the treatment liquid LQ flowing through the replenishment pipe 51 .

In FIG. 3( a ), the horizontal axis represents time, and the vertical axis represents the flow rate of the gas flowing through the gas supply piping 41 . Hereinafter, the flow rate of the gas flowing through the gas supply piping 41 may be described as "gas flow rate X".

In the example shown in Fig. 3(a), the gas flow X is reduced from the flow X0 to the flow X1 at the time t0, from the flow X1 to the flow X2 at the time t1, and from the flow X2 to the flow X3 at the time t2. t3 is reduced to "0" from the flow rate X3. As a result, at time t0, time t1, time t2, and time t3, the air bubble supply amount decreases. Furthermore, by setting the gas flow rate X to "0", the supply of bubbles is stopped. In addition, the flow rate X0 represents the flow rate during the processing of the substrate W, and the time t0 represents the time after the processing time has elapsed.

In this way, in the example shown in FIG. 3( a ), the control unit 111 reduces the gas flow rate X in four stages until the supply of the bubbles is stopped, and reduces the supply amount of the bubbles in stages.

In FIG. 3( b ), the horizontal axis represents time, and the vertical axis represents the flow rate of the treatment liquid LQ flowing through the replenishment piping 51 . Hereinafter, the flow rate of the processing liquid LQ flowing through the replenishment piping 51 may be described as "replenishment flow rate".

In the example shown in FIGS. 3( a ) and 3 ( b ), the processing liquid LQ is replenished four times from the processing liquid replenishing means 5 . Specifically, at time t0 , time t1 , time t2 , and time t3 , the processing liquid LQ is replenished from the processing liquid replenishing means 5 . Specifically, the treatment liquid LQ of the replenishment amount Y1 is supplied to the outer tank 22 at the time t0, the treatment liquid LQ of the replenishment amount Y2 is supplied to the outer tank 22 at the time t1, and the treatment liquid LQ of the replenishment amount Y3 is supplied at the time t2. In the outer tank 22, the processing liquid LQ of the replenishment amount Y4 is supplied to the outer tank 22 at time t3.

As shown in FIGS. 3( a ) and 3 ( b ), the control unit 111 replenishes the outer tank 22 with the treatment liquid LQ from the treatment liquid replenishing member 5 accordingly at the time point when the air bubble supply amount decreases stepwise.

In addition, the timing of reducing the gas flow rate X is not particularly limited. For example, the control unit 111 may decrease the gas flow rate X every time a predetermined time elapses. In addition, the reduction amount of the gas flow rate X at each time point is not specifically limited. For example, the control unit 111 may decrease the gas flow rate X by a fixed amount. That is, the amount of air bubble reduction at each time point can also be fixed.

As long as the liquid level position of the processing liquid LQ stored in the inner tank 21 is maintained above each substrate W, the replenishment amount Y of the processing liquid LQ is not particularly limited. For example, the replenishment amount Y of the treatment liquid LQ may be the same as the air bubble reduction amount, or may be larger than the air bubble reduction amount.

Next, with reference to FIG. 2 , FIG. 3( a ), FIG. 3 ( b ), FIG. 4 ( a ), and FIG. 4 ( b ), the data stored in the storage unit 112 of the control device 110 will be described. FIG. 4( a ) is a diagram showing an example of the first table TB1 , and FIG. 4( b ) is a diagram showing an example of the second table TB2 .

In the present embodiment, the memory unit 112 stores data that specifies the physical quantity corresponding to the amount of air bubbles supplied from the air bubble supply member 4 (the air bubble supply amount) and the amount of the treatment liquid LQ replenished from the treatment liquid replenishing member 5 (treatment liquid). The relationship between the replenishment amount Y) of liquid LQ. The control unit 111 controls the replenishment amount Y of the treatment liquid LQ based on data defining the relationship between the physical quantity corresponding to the air bubble supply amount and the replenishment amount Y of the treatment liquid LQ.

Specifically, the storage unit 112 stores the first table TB1 ( FIG. 4( a )) and the second table TB2 ( FIG. 4( b )). The first table TB1 and the second table TB2 are examples of data that define the relationship between the physical quantity corresponding to the bubble supply amount and the replenishment amount Y of the processing liquid LQ. The control part 111 refers to the 1st table TB1 and the 2nd table TB2, and controls the stepwise reduction of the bubble supply amount and the replenishment of the processing liquid LQ.

As shown in FIG. 4( a ), the first table TB1 defines the relationship between the gas flow rate X and the reduction period T. As shown in FIG. Here, the gas flow rate X is an example of a physical quantity corresponding to the bubble supply amount.

In the example shown in FIG. 4( a ), the first table TB1 defines the flow rate X0 , the flow rate X1 , the flow rate X2 , the flow rate X3 , and the flow rate “0” as the gas flow rate X, and specifies the reduction period T as the gas flow rate X. Period T1, Period T2, and Period T3. Furthermore, the first table TB1 associates the flow rate X1 with the period T1, associates the flow rate X2 with the period T2, and associates the flow rate X3 with the period T3.

After the processing time has elapsed, the control unit 111 refers to the first table TB1, and reduces the gas flow rate X from the flow rate X0 to the flow rate X1. Then, after the period T1 has elapsed, the gas flow rate X is reduced from the flow rate X1 to the flow rate X2. Thereafter, similarly, the gas flow rate X is decreased stepwise until the gas flow rate X becomes "0".

As shown in FIG. 4( b ), the second table TB2 defines the relationship between the gas flow rate X and the replenishment amount Y of the processing liquid LQ. In the example shown in FIG. 4( b ), the second table TB2 defines the replenishment amount Y1 , the replenishment amount Y2 , the replenishment amount Y3 , and the replenishment amount Y4 as the replenishment amount Y of the treatment liquid LQ. In addition, the second table TB2 associates the flow rate X1 of the gas with the replenishment amount Y1 of the treatment liquid LQ, associates the flow rate X2 of the gas with the replenishment amount Y2 of the treatment liquid LQ, and associates the flow rate X3 of the gas with the replenishment amount of the treatment liquid LQ Y3 establishes a correlation, and establishes a correlation between the flow rate "0" of the gas and the replenishment amount Y4 of the treatment liquid LQ.

The control unit 111 refers to the second table TB2, and controls the replenishment amount Y in accordance with the stepwise decrease in the gas flow rate X. For example, the control unit 111 changes the flow rate X1 in response to the gas flow rate X, and replenishes the treatment liquid LQ in the replenishment amount Y1 to the outer tank 22 from the treatment liquid replenishment member 5 . For example, the control unit 111 may control the replenishment amount Y by controlling the length of time during which the processing liquid LQ flows through the replenishment piping 51 . Alternatively, the control unit 111 may control the replenishment amount Y by controlling the replenishment flow rate (the flow rate of the treatment liquid LQ flowing in the replenishment pipe 51 ) and the length of time during which the treatment liquid LQ circulates in the replenishment pipe 51 .

Furthermore, in the present embodiment, the first table TB1 specifies the relationship between the gas flow rate X and the reduction period T, but the first table TB1 may specify the relationship between the bubble supply amount and the reduction period T.

Furthermore, the second table TB2 specifies the relationship between the gas flow rate X and the replenishment amount Y, but the second table TB2 may specify the relationship between the bubble supply amount and the replenishment amount Y or the relationship between the bubble supply amount and the replenishment flow rate.

Next, an example of the substrate processing method of the present embodiment will be described with reference to FIGS. 1 to 5 . The substrate processing method of this embodiment is implemented by the substrate processing apparatus 100 . FIG. 5 is a flowchart showing an example of the operation of the substrate processing apparatus 100 of the present embodiment. In detail, FIG. 5 shows an example of the processing executed by the control unit 111 . The process shown in FIG. 5 includes steps S1 to S6. In addition, when the process shown in FIG. 5 starts, the process liquid LQ is stored in the process tank 2, and the circulation part 30 circulates the process liquid LQ between the inner tank 21 and the outer tank 22. The circulation part 30 circulates the treatment liquid LQ during the process of executing the treatment shown in FIG. 5 .

First, the control unit 111 controls the elevating unit 120 to move the substrate holding unit 130 holding the plurality of substrates W from the retracted position (the position shown in FIG. 1( a ) to the processing position (the position shown in FIG. 1( b )) . As a result, the plurality of substrates W are immersed in the processing liquid LQ stored in the processing tank 2 (step S1 ). Specifically, a plurality of substrates W are accommodated in the inner tank 21 and immersed in the processing liquid LQ stored in the inner tank 21 .

After the plurality of substrates W are immersed in the processing liquid LQ, the control unit 111 supplies air bubbles to the processing liquid LQ in the inner tank 21 from the plurality of air bubble supply members 4 . As a result, air bubbles are supplied from each air bubble supply member 4 to the surface of each of the plurality of substrates W immersed in the processing liquid LQ (step S2). Specifically, the control unit 111 circulates the gas from the gas supply pipe 41 to each of the bubble supply members 4 .

After the supply of air bubbles is started, the control unit 111 determines whether or not the time elapsed after the plurality of substrates W are immersed in the processing liquid LQ has reached the processing time (step S3 ). The control unit 111 repeats the determination of step S3 until the time elapsed after the plurality of substrates W are immersed in the processing liquid LQ reaches the processing time (NO in step S3).

When the control unit 111 determines that the time elapsed after the plurality of substrates W have been immersed in the processing liquid LQ has reached the processing time (Yes in step S3 ), the air bubble supply amount is decreased, and the processing liquid replenishing means 5 replenishes the processing liquid LQ. into the processing tank 2 (step S4).

Specifically, the control unit 111 reduces the flow rate (gas flow rate X) of the gas flowing through the gas supply pipe 41 stepwise before the bubble supply amount becomes "0", that is, before the supply of bubbles is stopped. On the other hand, the control unit 111 causes the processing liquid LQ to flow from the replenishing pipe 51 to the processing liquid replenishing member 5 in response to the timing when the gas flow rate X decreases in steps.

The control unit 111 replenishes the processing liquid LQ to the processing tank 2 from the processing liquid replenishing means 5 at the time point when the gas flow rate X is set to "0" and the supply of the bubbles is stopped (step S5).

After the replenishment of the processing liquid LQ corresponding to the stop of the bubble supply is completed, the control unit 111 controls the elevating unit 120 to move the substrate holding unit 130 holding the plurality of substrates W from the processing position to the retracted position. As a result, the plurality of substrates W are pulled from the processing liquid LQ stored in the processing tank 2 (step S6 ), and the processing shown in FIG. 5 is completed.

Furthermore, in the process shown in FIG. 5 , the control unit 111 pulls the plurality of substrates W from the processing liquid LQ stored in the processing tank 2 after the replenishment of the processing liquid LQ corresponding to the stop of the bubble supply is completed. However, the control unit 111 may pull up the plurality of substrates W from the processing liquid LQ after the processing time has elapsed and before the replenishment of the processing liquid LQ corresponding to the stop of the bubble supply is completed. For example, the control unit 111 may pull up the plurality of substrates W from the processing liquid LQ during the process of reducing the supply amount of air bubbles. The throughput of the substrate processing can be increased by pulling the plurality of substrates W from the processing liquid LQ before the replenishment of the processing liquid LQ corresponding to the stop of the bubble supply is completed.

Next, the configuration of the processing liquid supply member 3 and the air bubble supply member 4 will be described with reference to FIG. 6 . FIG. 6 is a plan view showing a plurality of processing liquid supply members 3 and a plurality of air bubble supply members 4 . As shown in FIG. 6 , the plurality of processing liquid supply members 3 and the plurality of air bubble supply members 4 are arranged substantially parallel to each other and spaced apart in the X direction in plan view.

Specifically, the plurality of processing liquid supply members 3 are arranged substantially parallel to each other and spaced apart in the X direction in plan view. The plurality of processing liquid supply members 3 each extend in the Y direction. In each processing liquid supply member 3 , the plurality of processing liquid discharge ports P1 are arranged on a substantially straight line at intervals in the longitudinal direction (Y direction) of the processing liquid supply member 3 .

The plurality of air bubble supply members 4 are arranged substantially parallel to each other and spaced apart in the X direction in plan view. The plurality of air bubble supply members 4 each extend in the Y direction. In each of the bubble supply members 4 , the plurality of gas supply ports G are arranged on a substantially straight line at intervals in the longitudinal direction (Y direction) of the bubble supply member 4 .

In each bubble supply member 4 , a plurality of gas supply ports G are provided on the upper surface portion of the bubble supply member 4 . In addition, as long as bubbles can be supplied from the gas supply port G, the position of the gas supply port G is not particularly limited. Moreover, in each bubble supply member 4, the some gas supply port G may be arrange|positioned at equal intervals, and may be arrange|positioned at unequal intervals.

Next, the configuration of the gas supply unit 40 will be described with reference to FIGS. 7 to 9 . First, a first example of the gas supply unit 40 will be described with reference to FIG. 7 . FIG. 7 is a diagram showing a first example of the gas supply unit 40 . In the example shown in FIG. 7 , the gas supply unit 40 further includes a flow rate adjustment unit 42 , a filter 44 , and an on-off valve 45 .

The flow rate adjustment unit 42 adjusts the flow rate (gas flow rate X) of the gas flowing through the gas supply pipe 41 . In the example shown in FIG. 7, the flow rate adjustment part 42 contains the mass flow controller 42a.

The mass flow controller 42 a is interposed in the gas supply piping 41 . The mass flow controller 42a is controlled by the control device 110 (control unit 111) to adjust the gas flow rate X. Specifically, the control apparatus 110 (control part 111) instructs the target value of the gas flow rate X to the mass flow controller 42a. The mass flow controller 42a measures the gas flow rate X, and adjusts the gas flow rate X so that the measurement result becomes a target value.

The filter 44 is interposed in the gas supply piping 41 . The filter 44 filters the gas flowing through the gas supply pipe 41 and removes foreign matter from the gas flowing through the gas supply pipe 41 .

The on-off valve 45 is interposed in the gas supply piping 41 . The on-off valve 45 is, for example, a solenoid valve. The on-off valve 45 is controlled by the control device 110 (control unit 111 ).

The on-off valve 45 opens and closes the flow path of the gas supply pipe 41 to control the flow of the gas flowing through the gas supply pipe 41 . Specifically, when the on-off valve 45 is opened, the gas flows to the bubble supply member 4 via the gas supply pipe 41 . As a result, the gas is blown out from the air bubble supply member 4 , and air bubbles are supplied to the processing liquid LQ stored in the inner tank 21 . On the other hand, when the on-off valve 45 is closed, the flow of gas is blocked, and the supply of air bubbles is stopped.

Here, an example of processing executed by the control device 110 (control unit 111 ) will be described.

The control device 110 (control unit 111 ) instructs the mass flow controller 42a to the flow rate X0 described with reference to FIGS. After setting the target value of the gas flow rate X, the on-off valve 45 is opened.

The control device 110 (control unit 111 ) instructs the mass flow controller 42a to refer to Fig. 3(a), Fig. 3(b), and Fig. 4(a) in this order when reducing the bubble supply amount stepwise after the processing time has elapsed. And the flow rate X1, the flow rate X2, and the flow rate X3 described in FIG. 4(b) are used as the target value of the gas flow rate X. At this time, the control device 110 (control unit 111 ) replenishes the processing liquid LQ to the outer tank 22 from the processing liquid replenishing means 5 in accordance with the instruction to change the target value of the gas flow rate X.

When the control device 110 (control unit 111 ) stops the supply of air bubbles, the on-off valve 45 is closed. At this time, the control device 110 (control unit 111 ) replenishes the processing liquid LQ to the outer tank 22 from the processing liquid replenishing means 5 in accordance with the fact that the on-off valve 45 is closed.

Furthermore, the control device 110 (control unit 111 ) can also obtain the measured value of the gas flow rate X from the mass flow controller 42a. In this case, the control device 110 (control unit 111 ) replenishes the treatment liquid LQ to the outer tank 22 from the treatment liquid replenishing member 5 according to the measured value of the gas flow rate X.

Next, a second example of the gas supply unit 40 will be described with reference to FIG. 8 . FIG. 8 is a diagram showing a second example of the gas supply unit 40 . In the gas supply part 40 shown in FIG. 8 , the configuration of the flow rate adjustment part 42 is different from that of the gas supply part 40 shown in FIG. 7 .

In the example shown in FIG. 8 , the gas supply unit 40 further includes a flow rate adjustment unit 42 , a filter 44 , first to fourth on-off valves 45 a to 45 d , and a flow meter 47 . In the example shown in FIG. 8, the gas supply piping 41 contains the 1st supply piping 41a - the 4th supply piping 41d. Moreover, the flow rate adjustment part 42 contains the 1st maximum flow rate adjustment valve 46a - the 4th maximum flow rate adjustment valve 46d.

The first supply piping 41 a circulates the gas to the bubble supply member 4 . The flowmeter 47, the filter 44, the first maximum flow rate adjustment valve 46a, and the first on-off valve 45a are interposed in the first supply pipe 41a in this order from upstream to downstream.

The second supply piping 41b communicates with the first supply piping 41a. Specifically, the upstream end of the second supply pipe 41b is connected to the first supply pipe 41a on the upstream side of the first maximum flow rate adjustment valve 46a, and the downstream end of the second supply pipe 41b is connected to the first on-off valve 45a. The downstream side is connected to the first supply pipe 41a. Therefore, the 2nd supply piping 41b forms the flow path which bypasses the 1st maximum flow rate adjustment valve 46a and the 1st on-off valve 45a. In the second supply pipe 41b, a second maximum flow rate adjustment valve 46b and a second on-off valve 45b are interposed in this order from upstream to downstream.

The third supply piping 41c communicates with the first supply piping 41a via the second supply piping 41b. Specifically, the upstream end of the third supply pipe 41c is connected to the second supply pipe 41b on the upstream side of the second maximum flow rate adjustment valve 46b, and the downstream end of the third supply pipe 41c is connected to the second on-off valve 45b. The downstream side is connected to the second supply pipe 41b. Therefore, the 3rd supply piping 41c forms a flow path which bypasses the 1st maximum flow rate adjustment valve 46a and the 1st on-off valve 45a. A third maximum flow rate adjustment valve 46c and a third on-off valve 45c are interposed in the third supply pipe 41c in this order from upstream to downstream.

The fourth supply piping 41d communicates with the first supply piping 41a via the second supply piping 41b and the third supply piping 41c. Specifically, the upstream end of the fourth supply pipe 41d is connected to the third supply pipe 41c on the upstream side of the third maximum flow control valve 46c, and the downstream end of the fourth supply pipe 41d is connected to the third on-off valve 45c. The downstream side is connected to the third supply pipe 41c. Therefore, the 4th supply piping 41d forms a flow path which bypasses the 1st maximum flow rate adjustment valve 46a and the 1st on-off valve 45a. A fourth maximum flow rate adjustment valve 46d and a fourth on-off valve 45d are interposed in this order from upstream to downstream in the fourth supply pipe 41d.

In addition, the 3rd supply piping 41c and the 4th supply piping 41d may communicate with the 1st supply piping 41a similarly to the 2nd supply piping 41b.

The first on-off valve 45a opens and closes the flow path of the first supply pipe 41a on the upstream side of the connection between the downstream ends of the first supply pipe 41a and the second supply pipe 41b, and controls the flow through the first supply pipe 41a the flow of gas. The second on-off valve 45b opens and closes the flow path of the second supply pipe 41b, and controls the flow of the gas flowing through the second supply pipe 41b. Similarly, the third on-off valve 45c and the fourth on-off valve 45d open and close the flow paths of the third supply piping 41c and the fourth supply piping 41d, respectively, and control the flow through the third supply piping 41c and the fourth supply piping 41d, respectively. the flow of gas.

Specifically, among the first on-off valve 45a to the fourth on-off valve 45d, when the first on-off valve 45a is opened and the other on-off valves are closed, the gas flows to the bubble supply means via the first maximum flow rate adjustment valve 46a and the first on-off valve 45a 4.

Of the first to fourth on-off valves 45a to 45d, when the second on-off valve 45b is open and the other on-off valves are closed, the gas flows to the bubble supply member 4 via the second maximum flow rate adjustment valve 46b and the second on-off valve 45b.

Of the first to fourth on-off valves 45a to 45d, when the third on-off valve 45c is open and the other on-off valves are closed, the gas flows to the air bubble supply member 4 via the third maximum flow control valve 46c and the third on-off valve 45c.

Of the first to fourth on-off valves 45a to 45d, when the fourth on-off valve 45d is open and the other on-off valves are closed, the gas flows to the bubble supply member 4 via the fourth maximum flow rate adjustment valve 46d and the fourth on-off valve 45d.

By flowing the gas to the bubble supply member 4 and blowing the gas from the bubble supply member 4 , bubbles are supplied to the processing liquid LQ stored in the inner tank 21 . On the other hand, when all the 1st on-off valve 45a - the 4th on-off valve 45d are closed, the flow of gas is blocked, and the supply of air bubbles is stopped.

The first on-off valve 45a to the fourth on-off valve 45d are, for example, solenoid valves. The first on-off valve 45a to the fourth on-off valve 45d are controlled by the control device 110 (control unit 111).

When the first maximum flow rate adjusting valve 46a is open to the first on-off valve 45a and the second on-off valve 45b to 45d are closed to adjust the maximum flow. Specifically, the maximum flow rate of the gas is adjusted by the opening ratio of the first maximum flow rate adjustment valve 46a. In the present embodiment, the first maximum flow rate adjustment valve 46a adjusts the maximum flow rate of the gas to the flow rate X0 described with reference to Figs. 3(a), 3(b), 4(a) and 4(b). The first maximum flow rate adjustment valve 46a is, for example, a needle valve.

When the second maximum flow regulating valve 46b is open to the second on-off valve 45b and the first on-off valve 45a, the third on-off valve 45c, and the fourth on-off valve 45d are closed, flow through the second maximum flow regulating valve 46b and the second on-off valve 45b to The maximum flow rate of the gas in the bubble supply member 4 is adjusted. Specifically, the maximum flow rate of the gas is adjusted by the opening ratio of the second maximum flow rate adjustment valve 46b. In the present embodiment, the second maximum flow rate adjustment valve 46b adjusts the maximum flow rate of the gas to the flow rate X1 described with reference to Figs. 3(a), 3(b), 4(a) and 4(b). The second maximum flow rate adjustment valve 46b is, for example, a needle valve.

When the third maximum flow regulating valve 46c is open to the third on-off valve 45c and the first on-off valve 45a, the second on-off valve 45b, and the fourth on-off valve 45d are closed, flow through the third maximum-flow regulating valve 46c and the third on-off valve 45c to The maximum flow rate of the gas in the bubble supply member 4 is adjusted. Specifically, the maximum flow rate of the gas is adjusted by the opening ratio of the third maximum flow rate adjustment valve 46c. In the present embodiment, the third maximum flow rate adjustment valve 46c adjusts the maximum flow rate of the gas to the flow rate X2 described with reference to Figs. 3(a), 3(b), 4(a) and 4(b). The third maximum flow rate adjustment valve 46c is, for example, a needle valve.

Gas flowing to the bubble supply member 4 via the fourth maximum flow rate adjustment valve 46d and the fourth switch valve 45d when the fourth maximum flow rate adjustment valve 46d is open to the fourth switch valve 45d and the first switch valve 45a to the third switch valve 45c are closed to adjust the maximum flow. Specifically, the maximum flow rate of the gas is adjusted by the opening ratio of the fourth maximum flow rate adjustment valve 46d. In the present embodiment, the fourth maximum flow rate adjustment valve 46d adjusts the maximum flow rate of the gas to the flow rate X3 described with reference to Figs. 3(a), 3(b), 4(a) and 4(b). The fourth maximum flow rate adjustment valve 46d is, for example, a needle valve.

Here, an example of processing executed by the control device 110 (control unit 111 ) will be described.

The control device 110 (control unit 111 ) opens the first on-off valve 45a of the first on-off valve 45a to the fourth on-off valve 45d in response to the fact that the plurality of substrates W are immersed in the processing liquid LQ, and opens and closes the rest of the on-off valves 45a. The valve is closed. At this time, the gas flow rate X is adjusted to the flow rate X0 by the first maximum flow rate adjustment valve 46a.

After the processing time has elapsed, the control device 110 (control unit 111 ) closes the first on-off valve 45a and opens the second on-off valve 45b. At this time, the gas flow rate X is adjusted to the flow rate X1 by the second maximum flow rate adjustment valve 46b.

The control device 110 (control unit 111 ) closes the second on-off valve 45b and opens the third on-off valve 45c when the period T1 described with reference to FIG. 4( a ) elapses after the second on-off valve 45b is opened. At this time, the gas flow rate X is adjusted to the flow rate X2 by the third maximum flow rate adjustment valve 46c.

The control device 110 (control unit 111 ) closes the third on-off valve 45c and opens the fourth on-off valve 45d when the period T2 described with reference to FIG. 4( a ) elapses after the third on-off valve 45c is opened. At this time, the gas flow rate X is adjusted to the flow rate X3 by the fourth maximum flow rate adjustment valve 46d.

The control device 110 (control unit 111 ) closes the fourth on-off valve 45d when the period T3 described with reference to FIG. 4( a ) elapses after the fourth on-off valve 45d is opened. As a result, the first on-off valve 45a to the fourth on-off valve 45d are all closed, and the supply of air bubbles is stopped.

The flowmeter 47 measures the flow rate (gas flow rate X) of the gas flowing through the first supply pipe 41a. The control device 110 (control unit 111 ) replenishes the outer tank 22 with the treatment liquid LQ from the treatment liquid replenishment means 5 based on the measurement result of the flow meter 47 . For example, the measurement result of the flow meter 47 changes from the flow rate X0 to the flow rate X1 by changing from the state where the first on-off valve 45a is open and the other on-off valves are closed to the state where the second on-off valve 45b is open and the other on-off valves are closed. The control device 110 (control unit 111 ) changes from the flow rate X0 to the flow rate X1 according to the measurement result of the flow meter 47 , and replenishes the treatment liquid LQ to the outer tank 22 from the treatment liquid replenishing means 5 .

Furthermore, the flow meter 47 may be omitted. In this case, the control device 110 (control unit 111 ) replenishes the outer tank 22 with the treatment liquid LQ from the treatment liquid replenishing means 5 according to the change in the opening and closing states of the first to fourth opening and closing valves 45 a to 45 d . For example, the control device 110 (control unit 111 ) replenishes the processing liquid from the state in which the first on-off valve 45a is opened and the remaining on-off valves are closed to the state in which the second on-off valve 45b is opened and the remaining on-off valves are closed. The member 5 replenishes the treatment liquid LQ to the outer tank 22 .

Next, a third example of the gas supply unit 40 will be described with reference to FIG. 9 . FIG. 9 is a diagram showing a third example of the gas supply unit 40 . In the gas supply part 40 shown in FIG. 9 , the configuration of the flow rate adjustment part 42 is different from that of the gas supply part 40 shown in FIG. 7 and the gas supply part 40 shown in FIG. 8 .

In the example shown in FIG. 9 , the gas supply unit 40 further includes a flow rate adjustment unit 42 , a filter 44 , and an on-off valve 45 . In the example shown in FIG. 9 , the flow rate adjustment unit 42 includes a flow meter 47 and a maximum flow rate control valve 48 .

The maximum flow control valve 48 is interposed in the gas supply piping 41 . The maximum flow rate control valve 48 controls the maximum flow rate of the gas flowing through the gas supply piping 41 . The maximum flow control valve 48 is, for example, an electric needle valve. The control device 110 (control unit 111 ) adjusts the opening ratio of the maximum flow rate control valve 48 to control the maximum flow rate of the gas flowing through the gas supply pipe 41 .

Here, an example of processing executed by the control device 110 (control unit 111 ) will be described.

The control device 110 (control unit 111 ) opens the on-off valve 45 when the supply of air bubbles starts, and based on the measurement result (the gas flow rate X) of the flow meter 47 , the gas flow rate X becomes the reference to FIGS. 3( a ) and 3 ( b ). ), Figure 4 (a) and Figure 4 (b) to control the maximum flow control valve 48 in the manner of the flow X0 explained.

After the processing time has elapsed, the control device 110 (control unit 111 ) uses the gas flow X as a reference to FIGS. 3( a ), 3 ( b ), 4 ( a ) and 4 ( b ) based on the measurement result of the flow meter 47 ) to control the maximum flow control valve 48 in the manner of the flow X1 described. After that, the control device 110 (control unit 111 ) sequentially changes the gas flow rate X to the difference between the flow rate X2 and the flow rate X3 described with reference to FIGS. way to control the maximum flow control valve 48 . The control device 110 (control unit 111 ) closes the on-off valve 45 when stopping the supply of air bubbles.

Further, the control device 110 (control unit 111 ) replenishes the outer tank 22 with the treatment liquid LQ from the treatment liquid replenishment means 5 based on the measurement result of the flow meter 47 . For example, the control device 110 (control unit 111 ) changes from the flow rate X0 to the flow rate X1 according to the measurement result of the flow meter 47 , and the treatment liquid replenishing means 5 replenishes the treatment liquid LQ to the outer tank 22 .

Next, the configuration of the processing liquid replenishing unit 50 will be described with reference to FIG. 10 . FIG. 10 is a diagram showing the configuration of the treatment liquid replenishing unit 50 . As shown in FIG. 10 , the treatment liquid replenishment unit 50 further includes an on-off valve 52 , a maximum flow rate adjustment valve 53 , a replenishment tank 61 , piping 62 , an on-off valve 63 , a circulation piping 64 , a pump 65 , a heating unit 66 , and a filter 67 .

The replenishment tank 61 stores the processing liquid LQ. The piping 62 circulates the processing liquid LQ to the replenishment tank 61 . The on-off valve 63 is interposed in the piping 62 . The on-off valve 63 opens and closes the flow path of the piping 62 . Specifically, when the on-off valve 63 is opened, the processing liquid LQ flows to the replenishment tank 61 through the flow path of the piping 62 . On the other hand, when the on-off valve 63 is closed, the flow of the processing liquid LQ in the piping 62 is blocked. The on-off valve 63 is, for example, a solenoid valve. The on-off valve 63 is controlled by the control device 110 (control unit 111 ).

The circulation piping 64 circulates the treatment liquid LQ stored in the replenishment tank 61 . Specifically, the treatment liquid LQ stored in the replenishment tank 61 flows into the circulation pipe 64 from one end of the circulation pipe 64 , and flows through the circulation pipe 64 . The treatment liquid LQ flowing through the circulation pipe 64 flows out to the replenishment tank 61 from the other end of the circulation pipe 64 .

The pump 65 is interposed in the circulation piping 64 . The pump 65 drives the processing liquid LQ by the fluid pressure, and circulates the processing liquid LQ through the circulation piping 64 . As a result, the processing liquid LQ flows through the circulation piping 64 .

The heating unit 66 and the filter 67 are interposed in the circulation piping 64 . The heating unit 66 heats the processing liquid LQ flowing through the circulation pipe 64 to adjust the temperature of the processing liquid LQ flowing through the circulation pipe 64 . The filter 67 filters the treatment liquid LQ flowing through the circulation pipe 64 and removes foreign substances from the treatment liquid LQ flowing through the circulation pipe 64 .

The supplementary piping 51 is connected to the circulation piping 64 . In other words, the supplementary piping 51 is branched from the circulation piping 64 .

The on-off valve 52 is interposed in the supplementary piping 51 . The on-off valve 52 is, for example, a solenoid valve. The on-off valve 52 is controlled by the control device 110 (control unit 111 ). The on-off valve 52 opens and closes the flow path of the replenishment pipe 51 to control the flow of the treatment liquid LQ flowing through the replenishment pipe 51 .

The maximum flow rate adjustment valve 53 is interposed in the supplementary piping 51 . The maximum flow rate adjustment valve 53 adjusts the maximum flow rate of the treatment liquid LQ flowing through the supplementary piping 51 . Specifically, the maximum flow rate of the processing liquid LQ flowing through the replenishment piping 51 is adjusted by the opening ratio of the maximum flow rate adjustment valve 53 . The maximum flow rate adjustment valve 53 is, for example, a needle valve.

Here, an example of processing executed by the control device 110 (control unit 111 ) will be described. The control device 110 (control unit 111 ) opens the on-off valve 52 when replenishing the processing liquid LQ into the processing tank 2 (outer tank 22 ).

When the on-off valve 52 is opened, the processing liquid LQ flows from the circulation pipe 64 into the replenishment pipe 51 . As a result, the treatment liquid LQ flows to the treatment liquid replenishment means 5 via the replenishment pipe 51 , and then the treatment liquid LQ is discharged from the treatment liquid replenishment means 5 .

In addition, the control device 110 (control unit 111 ) closes the on-off valve 52 when the replenishment of the processing liquid LQ is stopped. When the on-off valve 52 is closed, the flow of the processing liquid LQ in the replenishment piping 51 is blocked, and the discharge of the processing liquid LQ by the processing liquid replenishing member 5 is stopped.

In the present embodiment, the control device 110 (control unit 111 ) adjusts the on-off valve 52 to open based on the maximum flow rate of the treatment liquid LQ (the flow rate of the treatment liquid LQ flowing through the supplementary pipe 51 ) adjusted by the maximum flow rate adjustment valve 53 . The duration of the state is controlled, thereby controlling the replenishment amount Y of the treatment liquid LQ. For example, when reducing the gas flow rate X from the flow rate X0 to the flow rate X1 as described with reference to FIGS. 3( a ), 3 ( b ), 4 ( a ) and 4 ( b ), the control device 110 ( ) Based on the maximum flow rate of the treatment liquid LQ adjusted by the maximum flow rate adjustment valve 53, the length of time for which the on-off valve 52 is opened is adjusted so that the treatment liquid LQ of the replenishment amount Y1 is supplied to the outer tank 22.

Next, a modification of the processing liquid replenishing unit 50 will be described with reference to FIGS. 11 and 12 . FIG. 11 is a diagram showing a first modification of the treatment liquid replenishing unit 50 . As shown in FIG. 11 , the treatment liquid replenishing unit 50 may have a maximum flow rate control valve 54 and a flow meter 55 instead of the maximum flow rate adjustment valve 53 described with reference to FIG. 10 .

The maximum flow control valve 54 is interposed in the supplementary piping 51 . The maximum flow control valve 54 is, for example, an electric needle valve. The control device 110 (control unit 111 ) adjusts the opening ratio of the maximum flow rate control valve 54 to control the maximum flow rate of the treatment liquid LQ flowing through the supplementary piping 51 .

The flow meter 55 measures the flow rate (supplement flow rate) of the treatment liquid LQ flowing through the supplementary piping 51 . The control device 110 (control unit 111 ) adjusts the opening ratio of the maximum flow control valve 54 based on the measurement result of the flow meter 55 .

Furthermore, the control device 110 (control unit 111 ) can control the replenishment amount Y of the treatment liquid LQ only by adjusting the length of time that the on-off valve 52 is in the open state, or can also adjust the on-off valve 52 to be in the open state. The length of time and the opening rate of the maximum flow control valve 54 are adjusted to control the replenishment amount Y of the treatment liquid LQ.

FIG. 12 is a diagram showing a second modification of the treatment liquid replenishing unit 50 . As shown in FIG. 12 , the treatment liquid replenishing unit 50 may include a mass flow controller 56 instead of the maximum flow rate adjustment valve 53 described with reference to FIG. 10 .

The mass flow controller 56 is interposed in the supplementary piping 51 . The mass flow controller 56 is controlled by the control device 110 (control unit 111 ), and adjusts the flow rate (supplement flow rate) of the processing liquid LQ flowing through the supplementary piping 51 . Specifically, the control device 110 (control unit 111 ) instructs the mass flow controller 56 to the target value of the replenishment flow rate of the processing liquid LQ. The mass flow controller 56 measures the replenishment flow rate of the treatment liquid LQ, and adjusts the replenishment flow rate of the treatment liquid LQ so that the measurement result becomes a target value.

Here, an example of processing executed by the control device 110 (control unit 111 ) will be described. The control device 110 (control unit 111 ) instructs the mass flow controller 56 to the target value of the replenishment flow rate of the treatment liquid LQ and opens the on-off valve 52 when replenishing the treatment liquid LQ into the treatment tank 2 (outer tank 22 ). The control device 110 (control unit 111 ) closes the on-off valve 52 when the replenishment of the treatment liquid LQ is stopped.

In addition, the control device 110 (control unit 111 ) adjusts the length of time during which the on-off valve 52 is in the open state based on the maximum flow rate of the treatment liquid LQ (target value of the replenishment flow rate of the treatment liquid LQ) adjusted by the mass flow controller 56, and Control the replenishment amount Y of the treatment liquid LQ. For example, when reducing the gas flow rate X from the flow rate X0 to the flow rate X1 as described with reference to FIGS. 3( a ), 3 ( b ), 4 ( a ) and 4 ( b ), the control device 110 ( ) Based on the target value of the replenishment flow rate of the treatment liquid LQ, the length of time for which the on-off valve 52 is opened is adjusted so that the treatment liquid LQ of the replenishment amount Y1 is supplied to the outer tank 22 .

Furthermore, the control device 110 (control unit 111 ) can also control the replenishment amount Y of the treatment liquid LQ by adjusting the length of time during which the on-off valve 52 is open and adjusting the target value of the replenishment flow rate.

In addition, the replenishment flow rate of the treatment liquid LQ may be a fixed value. When the supplemental flow rate of the treatment liquid LQ is a fixed value, the number of times of instructing the target value to the mass flow controller 56 may be one time.

The embodiments of the present invention have been described above with reference to the accompanying drawings ( FIGS. 1 to 12 ). However, the present invention is not limited to the above-described embodiments, and can be implemented in various forms without departing from the gist of the present invention. In addition, a plurality of constituent elements disclosed in the above-described embodiments can be appropriately changed. For example, one of all the components shown in a certain embodiment may be added to the components of other embodiments, or some of all the components shown in a certain embodiment may be independently removed from the implementation.

In order to make the invention easy to understand, the drawings schematically show each component in the main body, and the thickness, length, number, interval, etc. of each component shown in the drawings may be different from actual ones in order to facilitate the preparation of the drawings. In addition, the structure of each component shown in the above-mentioned embodiment is an example, and it does not specifically limit, It is needless to say that various changes can be added in the range which does not actually deviate from the effect of this invention.

For example, in the embodiment described with reference to FIGS. 1 to 12 , the substrate holding portion 130 holds a plurality of substrates W, but the number of the substrates W held by the substrate holding portion 130 may be one.

1 to 12 , the substrate processing apparatus 100 includes a plurality of processing liquid supply members 3, but the number of processing liquid supply members 3 provided in the substrate processing apparatus 100 may be one.

Similarly, in the embodiment described with reference to FIGS. 1 to 12 , the substrate processing apparatus 100 includes a plurality of bubble supply members 4 , but the number of the bubble supply members 4 provided in the substrate processing apparatus 100 may be one.

Furthermore, in the embodiment described with reference to FIGS. 1 to 12 , the air bubble supply amount is reduced four times, but the number of times the air bubble supply amount is reduced is not particularly limited.

In addition, in the embodiment described with reference to FIGS. 1 to 12 , the supply amount of air bubbles is reduced stepwise, but the substrate processing apparatus 100 may reduce the supply amount of air bubbles stepwise. Hereinafter, another example of the relationship between the air bubble supply amount and the replenishment amount Y of the processing liquid LQ will be described with reference to FIGS. 13( a ) and 13 ( b ).

Fig. 13(a) is a graph showing another example of the flow rate (gas flow rate X) of the gas flowing through the gas supply pipe 41 during the period after the elapse of the processing time until the supply of the bubbles is stopped. FIG. 13( b ) is a graph showing another example of the flow rate (supplementary flow rate) of the treatment liquid LQ flowing through the supplementary piping 51 .

In FIG. 13( a ), the horizontal axis represents time, and the vertical axis represents the flow rate (gas flow rate X) of the gas flowing through the gas supply piping 41 . As shown in FIG. 13( a ), the control unit 111 may gradually decrease the gas flow rate X during the period before the supply of the bubbles is stopped, thereby gradually reducing the supply amount of the bubbles.

In FIG. 13( b ), the horizontal axis represents time, and the vertical axis represents the flow rate (supplementary flow rate) of the treatment liquid LQ flowing through the supplementary piping 51 . As shown in FIGS. 13( a ) and 13 ( b ), when the gas flow rate X is gradually decreased, the control unit 111 may continuously supply the processing liquid LQ according to the decrease in the gas flow rate X (the decrease in the supply amount of bubbles). Supplement to the outer tank 22.

Furthermore, when the gas flow rate X is gradually decreased, the control unit 111 may supplement the outer tank 22 with the processing liquid LQ stepwise in accordance with the decrease in the gas flow rate X (reduction in the supply amount of bubbles). [Industrial availability]

The present invention is useful in the field of processing substrates.

2: Treatment tank 3: Treatment liquid supply member 4: Air bubble supply member 5: Treatment liquid replenishment member 21: Inner tank 21a: Bottom part 22: Outer tank 22a: Bottom part 30: Circulation part 31: Circulation piping 32: Circulation pump 33: Circulation Heating unit 34: Circulation filter 35: Circulation maximum flow rate adjustment valve 36: On-off valve 40: Gas supply unit 41: Gas supply piping 41a: First supply piping 41b: Second supply piping 41c: Third supply piping 41d: Fourth supply piping Supply piping 42: Flow rate adjustment unit 42a: Mass flow controller 44: Filter 45: On-off valve 45a: First on-off valve 45b: Second on-off valve 45c: Third on-off valve 45d: Fourth on-off valve 46a: First maximum Flow control valve 46b: Second maximum flow control valve 46c: Third maximum flow control valve 46d: Fourth maximum flow control valve 47: Flow meter 48: Maximum flow control valve 50: Treatment liquid replenishment unit 51: Supply piping 52: Switch Valve 53: Maximum flow adjustment valve 54: Maximum flow control valve 55: Flow meter 56: Mass flow controller 61: Supplementary tank 62: Piping 63: On-off valve 64: Circulation piping 65: Pump 66: Heating section 67: Filter 100 : substrate processing apparatus 110 : control apparatus 111 : control unit 112 : memory unit 120 : elevating unit 130 : substrate holding unit 131 : holding Rod 132: Main body plate G: Gas supply port LQ: Treatment liquid P1: Treatment liquid discharge port T: Decrease period T1: Period T2: Period T3: Period TB1: First table TB2: Second table t0: Time t1: Time t2 : Time t3: Time W: Substrate X: gas flow X0: flow X1: flow X2: Traffic X3: Traffic Y: supplement amount Y1: Supplement amount Y2: Supplement amount Y3: Supplement amount Y4: Supplement amount

FIGS. 1( a ) and ( b ) are diagrams showing a substrate processing apparatus according to an embodiment of the present invention. FIG. 2 is a diagram showing the configuration of the substrate processing apparatus according to the embodiment of the present invention. Fig. 3(a) is a graph showing an example of the flow rate of the gas flowing through the gas supply pipe during the period after the processing time has elapsed until the supply of the bubbles is stopped. (b) is a graph showing an example of the flow rate of the treatment liquid flowing through the supplementary piping. Fig. 4(a) is a diagram showing an example of the first table. (b) is a diagram showing an example of the second table. FIG. 5 is a flowchart showing an example of the operation of the substrate processing apparatus according to the embodiment of the present invention. FIG. 6 is a plan view showing a plurality of processing liquid supply members and a plurality of air bubble supply members. Fig. 7 is a diagram showing a first example of the gas supply unit. Fig. 8 is a diagram showing a second example of the gas supply unit. Fig. 9 is a diagram showing a third example of the gas supply unit. Fig. 10 is a diagram showing the configuration of the treatment liquid replenishing unit. Fig. 11 is a diagram showing a first modification of the treatment liquid replenishing section. Fig. 12 is a diagram showing a second modification of the treatment liquid replenishing section. Fig. 13(a) is a graph showing another example of the flow rate of the gas flowing through the gas supply pipe during the period after the processing time has elapsed until the supply of the bubbles is stopped. (b) is a graph showing another example of the flow rate of the treatment liquid flowing through the supplementary piping.

2: Processing tank

3: Treatment liquid supply member

4: Air bubble supply member

5: Treatment liquid replenishment member

21: Inner groove

21a: Bottom

22: Outer slot

22a: Bottom

30: Circulation Department

31: Circulation piping

32: Circulation pump

33: Circulation heating part

34: Loop Filter

35: Circulation maximum flow adjustment valve

36: On-off valve

40: Gas supply part

41: Gas supply piping

50: Treatment liquid replenishment section

51: Supplementary piping

100: Substrate processing device

110: Control device

111: Control Department

112: Memory Department

120: Lifting part

130: Substrate holding part

131: Keep Sticks

132: body board

LQ: Treatment liquid

W: substrate

Claims (8)

A substrate processing apparatus, comprising: a processing tank that stores a processing liquid; a substrate holding portion that holds a substrate in the processing tank, and immerses the substrate in the processing liquid stored in the processing tank; a bubble supply member, It supplies bubbles to the surface of the above-mentioned substrate immersed in the above-mentioned processing liquid; a processing liquid replenishing means, which replenishes the above-mentioned processing liquid into the above-mentioned processing tank; and a control part, which corresponds to the above-mentioned bubbles supplied from the above-mentioned bubble supply means. The amount of the treatment liquid is gradually or gradually decreased, and the treatment liquid is replenished from the treatment liquid replenishing means. The substrate processing apparatus according to claim 1, further comprising a memory unit, and the memory unit stores data that defines a physical quantity corresponding to the amount of the air bubbles supplied from the air bubble supplying means, and a quantity replenished by the processing liquid replenishing means. The relationship between the amount of the treatment liquid, and the control unit controls the amount of the treatment liquid replenished from the treatment liquid replenishing means based on the data. The substrate processing apparatus according to claim 1 or 2, further comprising: a gas supply pipe for supplying gas to the bubble supply member; and a flow rate adjustment unit for adjusting the flow rate of the gas flowing in the gas supply pipe. The substrate processing apparatus according to claim 1 or 2, further comprising a processing liquid replenishing unit that supplies the processing liquid to the processing liquid replenishing member, and the processing liquid replenishing section includes: a replenishing tank that stores the processing liquid Liquid; Supplementary piping, which circulates the above-mentioned treatment liquid to the above-mentioned treatment liquid replenishing member; A heating part, which adjusts the temperature of the above-mentioned treatment liquid; and A filter, which filters the above-mentioned treatment liquid. The substrate processing apparatus of claim 1 or 2, wherein the processing tank comprises: an inner tank, which stores the processing liquid; and an outer tank, which recovers the processing liquid overflowed from the inner tank; and the substrate holding portion is contained in the inner tank The above-mentioned substrate is held in the groove. The substrate processing apparatus according to claim 5, further comprising: a circulation pipe that circulates the treatment liquid between the outer tank and the inner tank; and a treatment liquid supply member that communicates with the circulation pipe and sends the treatment liquid to the inner tank The above-mentioned treatment liquid is supplied. The substrate processing apparatus according to claim 5, wherein the processing liquid replenishing means replenishes the processing liquid into the outer tank. A substrate processing method, comprising the steps of: immersing a substrate in a processing liquid stored in a processing tank; supplying bubbles to the surface of the substrate immersed in the processing liquid; and making the supply amount of the bubbles stepwise or stepwise and the above-mentioned treatment liquid is replenished into the above-mentioned treatment tank.

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