TW202220238A - Light-emitting diode structure and flip-chip light emitting diode structure - Google Patents
Light-emitting diode structure and flip-chip light emitting diode structure Download PDFInfo
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
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- Led Devices (AREA)
- Led Device Packages (AREA)
Abstract
Description
本發明涉及一種發光二極體結構與倒裝的發光二極體結構。The present invention relates to a light-emitting diode structure and a flip-chip light-emitting diode structure.
習知的發光二極體結構包括基板、位於所述基板的表面的第一半導體層、位於所述第一半導體遠離所述基板的表面的有源層、位於所述有源層遠離所述第一半導體層的表面的第二半導體層、位於所述第一半導體遠離所述基板的表面的第一電極、位於所述第二半導體層遠離所述基板一側的第一反射器、以及位於第二半導體層遠離所述基板一側且部分覆蓋第一反射器的第二電極。所述第一電極與所述第一半導體層歐姆接觸,所述第二電極與所述第二半導體層歐姆接觸,所述第一反射器為分散式布拉格反射器。當因外力作用,使得所述第一反射器在所述第二電極附近出現裂縫且破壞所述第二電極與所述第二半導體層歐姆接觸,則容易導致發光二極體不能正常發光,使得產品發生異常。A conventional light-emitting diode structure includes a substrate, a first semiconductor layer located on a surface of the substrate, an active layer located on a surface of the first semiconductor away from the substrate, and an active layer located away from the first semiconductor layer. A second semiconductor layer on the surface of the semiconductor layer, a first electrode on the surface of the first semiconductor away from the substrate, a first reflector on the side of the second semiconductor layer away from the substrate, and a first reflector on the side of the second semiconductor layer away from the substrate The two semiconductor layers are on one side away from the substrate and partially cover the second electrode of the first reflector. The first electrode is in ohmic contact with the first semiconductor layer, the second electrode is in ohmic contact with the second semiconductor layer, and the first reflector is a distributed Bragg reflector. When a crack occurs in the first reflector near the second electrode due to external force, and the ohmic contact between the second electrode and the second semiconductor layer is destroyed, it is easy to cause the light-emitting diode to fail to emit light normally, so that the The product is abnormal.
鑒於此,有必要提供一種發光二極體結構,所述發光二極體結構的耐用性高。In view of this, it is necessary to provide a light emitting diode structure with high durability.
本發明一方面提供一種發光二極體結構,包括: 基板; 發光堆疊層,包括依次層疊設置於所述基板上的多層,所述發光堆疊層靠近與遠離所述基板的外表層分別為底層與頂層; 第一電極,位於所述底層遠離所述基板的表面上且電性連接所述底層; 導電的第一反射器,位於所述頂層遠離所述基板的表面且電性連接所述頂層;以及, 第二電極,位於所述第一反射器遠離所述基板的表面上且電性連接所述第一反射器。 One aspect of the present invention provides a light-emitting diode structure, comprising: substrate; The light-emitting stacked layer includes multiple layers stacked on the substrate in sequence, and the outer layers of the light-emitting stacked layer close to and away from the substrate are the bottom layer and the top layer, respectively; a first electrode, located on the surface of the bottom layer away from the substrate and electrically connected to the bottom layer; a conductive first reflector located on a surface of the top layer remote from the substrate and electrically connected to the top layer; and, The second electrode is located on the surface of the first reflector away from the substrate and is electrically connected to the first reflector.
在本申請實施例,所述第一反射器包括複數第一介質層與複數第二介質層,所述第一介質層與所述第二介質層交替層疊設置且均為導電的,所述第一反射器中的一個第一介質層與所述發光堆疊層接觸連接,所述第一介質層的折射率大於所述第二介質層的折射率。In the embodiment of the present application, the first reflector includes a plurality of first dielectric layers and a plurality of second dielectric layers, the first dielectric layers and the second dielectric layers are alternately stacked and both are conductive, and the first dielectric layer and the second dielectric layer are alternately stacked. A first dielectric layer in a reflector is in contact with the light emitting stack layer, and the refractive index of the first dielectric layer is greater than the refractive index of the second dielectric layer.
在本申請實施例,所述第一介質層的厚度為 ,所述第二介質層的厚度均為 ,其中 為所述發光二極體結構發射的光的波長, 為所述第一介質層的折射率; 為所述第二介質層的折射率。 In this embodiment of the present application, the thickness of the first dielectric layer is , the thickness of the second dielectric layer is ,in is the wavelength of light emitted by the light-emitting diode structure, is the refractive index of the first dielectric layer; is the refractive index of the second dielectric layer.
在本申請實施例,所述第一介質層的材質為摻有鈮的氧化鈦,所述第二介質層的材質為氧化銦錫。In the embodiment of the present application, the material of the first dielectric layer is titanium oxide doped with niobium, and the material of the second dielectric layer is indium tin oxide.
在本申請實施例,所述發光二極體結構還包括位於所述基板遠離所述發光堆疊層的表面上的第二反射器。In the embodiment of the present application, the light emitting diode structure further includes a second reflector located on a surface of the substrate away from the light emitting stack layer.
在本申請實施例,所述第二反射器包括依次交替層疊設置的複數第三介質層與複數第四介質層,所述第三介質層與所述第四介質層交替層疊設置,所述第二反射器的一個第三介質層與所述基板接觸連接;所述第三介質層的折射率大於所述第四介質層的折射率。In the embodiment of the present application, the second reflector includes a plurality of third dielectric layers and a plurality of fourth dielectric layers alternately stacked in sequence, the third dielectric layers and the fourth dielectric layers are alternately stacked, and the third dielectric layers and the fourth dielectric layers are alternately stacked. A third medium layer of the two reflectors is in contact with the substrate; the refractive index of the third medium layer is greater than the refractive index of the fourth medium layer.
在本申請實施例,所述第三介質層的厚度為 ,所述第四介質層的厚度均為 ,其中 為所述發光二極體結構發射的光的波長, 為所述第三介質層的折射率, 為所述第四介質層的折射率;所述第三介質層與所述四層為電介質材料層。 In this embodiment of the present application, the thickness of the third dielectric layer is , the thickness of the fourth dielectric layer is ,in is the wavelength of light emitted by the light-emitting diode structure, is the refractive index of the third dielectric layer, is the refractive index of the fourth dielectric layer; the third dielectric layer and the fourth layer are dielectric material layers.
在本申請實施例,所述發光堆疊層還包括依次層疊設置於所述底層與所述頂層之間的有源層、半導體層與透明導電層,所述底層為半導體材質層,所述頂層為電流擴散層;所述發光堆疊層還包括位於所述半導體層上且夾設於所述透明導電層之間的電流阻擋層,所述電流阻擋層與所述第二電極正對設置。In the embodiment of the present application, the light-emitting stacked layer further includes an active layer, a semiconductor layer and a transparent conductive layer that are sequentially stacked between the bottom layer and the top layer, the bottom layer is a semiconductor material layer, and the top layer is a current diffusion layer; the light emitting stack layer further includes a current blocking layer on the semiconductor layer and sandwiched between the transparent conductive layers, the current blocking layer is disposed opposite to the second electrode.
在本申請實施例,所述發光二極體結構還包括絕緣層,所述絕緣層位於所述基板具有發光堆疊層的表面,且包裹設置於所述基板上的所述發光堆疊層;所述第一電極與所述第二電極相對所述絕緣層露出。In the embodiment of the present application, the light-emitting diode structure further includes an insulating layer, the insulating layer is located on the surface of the substrate with the light-emitting stack layer, and wraps the light-emitting stack layer disposed on the substrate; the The first electrode and the second electrode are exposed to the insulating layer.
本發明另一方面還提供一種倒裝的發光二極體結構,包括: 襯板;以及, 所述發光二極體結構,且所述第一電極與所述第二電極朝向並連接所述襯板的同一表面。 Another aspect of the present invention also provides a flip-chip light-emitting diode structure, comprising: lining; and, The light emitting diode structure, and the first electrode and the second electrode face and connect to the same surface of the backing plate.
上述發光二極體結構,即使因外力作用所述發光二極體結構時,所述第一反射器被所述第二電極覆蓋的部分與所述第一反射器的其他部分之間出現裂縫,且破壞了所述第二電極與所述發光堆疊層的電連接關係。由於所述第二電極位於所述第一反射器上且所述第一反射器具有導電性質,依然不會影響所述第二電極與所述發光堆疊層的電流導通作用,即不影響所述發光二極體結構的發光,有利於提高所述發光二極體結構的耐用性。In the above light-emitting diode structure, even when the light-emitting diode structure is acted on by an external force, cracks appear between the part of the first reflector covered by the second electrode and other parts of the first reflector, And destroy the electrical connection relationship between the second electrode and the light emitting stack layer. Since the second electrode is located on the first reflector and the first reflector has conductive properties, it still does not affect the current conduction between the second electrode and the light emitting stack layer, that is, does not affect the The light emission of the light emitting diode structure is beneficial to improve the durability of the light emitting diode structure.
附圖中示出了本發明的實施例,本發明可以藉由多種不同形式實現,而並不應解釋為僅局限於這裡所闡述的實施例。相反,提供這些實施例是為了使本發明更為全面和完整的公開,並使本領域的技術人員更充分地瞭解本發明的範圍。The drawings illustrate embodiments of the present invention, which may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.
參照圖1,本發明實施例提供發光二極體結構100,其包括基板10、發光堆疊層20、第一電極30、第二電極40與導電的第一反射器50。所述發光堆疊層20位於基板10上,所述發光堆疊層20包括依次層疊設置於基板10上的多層,其中所述發光堆疊層20靠近與遠離所述基板10的外表層分別為底層21與頂層26,即所述底層21與所述頂層26之間還層疊設置有其他的層。導電的所述第一反射器50位於所述頂層26遠離所述基板10的表面且電性連接所述頂層26。所述第二電極40位於所述第一反射器50遠離所述基板10的表面且電性連接所述第一反射器50。在本實施例中,所述第一反射器50為分散式布拉格反射器,所述第一反射器50用於將發光堆疊層20產生並傳送至所述第一反射器50的光進行反射。Referring to FIG. 1 , an embodiment of the present invention provides a light
通常所述第一電極30與所述第二電極40連接所述發光堆疊層20的相對的兩端且被施加不同的電壓,從而驅動所述發光二極體結構100發光。習知技術中,所述第一反射器50為非導電的材質,如果所述第一反射器50被所述第二電極40覆蓋的部分與所述第一反射器50的其他部分出現裂縫,則會導致所述第二電極40與所述發光堆疊層20的電連接關係被破壞,如圖2所示。而在本實施例中,由於所述第二電極40位於所述第一反射器50上且所述第一反射器50具有導電性質,即使由於外力使得所述第一反射器50被所述第二電極40覆蓋的部分與所述第一反射器50的其他部分出現裂縫,從而使得所述第二電極40與所述發光堆疊層20的電連接關係被破壞,也依然不會影響所述第二電極40與所述發光堆疊層20的電流導通作用,即不影響所述發光二極體結構100的發光。Usually, the
在本實施例中,所述基板10的表面可以生長半導體材料,且所述基板10的材質可為絕緣材料、導電材料或者半導體材料。所述基板10可以為但不限於藍寶石、SiC、MgAl
2O
4、MgO、LiAlO
2、LiGaO
2或者GaN。在本實施例中,可在所述基板10靠近所述發光堆疊層20的表面上形成複數微結構104,所述微結構104朝向所述發光堆疊層20,所述微結構104可提高形成所述發光二極體結構100的發光效率。
In this embodiment, a semiconductor material may be grown on the surface of the
在本實施例中,所述第一電極30與所述第二電極40均為金屬電極。所述第一電極30與所述第二電極40可包括下列中的至少一種:金(Au)、銀(Ag)、銅(Cu)、鋅(Zn)、鋁(Al)、銦(In)、鈦(Ti)、矽(Si)、鍺(Ge)、錫(Sn)、鎂(Mg)、鉭(Ta)、鉻(Cr)、鎢(W)、釕(Ru)、銠(Rh)、銥(Ir)、鎳(Ni)、鈀(Pd)、鉑(Pt)與它們的合金。所述第一電極30與所述第二電極40可由一層或多層導電材料形成。在一些實施例中,所述第一電極30與所述第二電極40可為透明電極,可以為但不限於銦錫氧化物(ITO)、鋁鋅氧化物(AZO)、銦鋅氧化物(IZO)、氧化鋅(ZnO)、三氧化二銦(In
2O
3)、二氧化錫(SnO
2)、氧化鎘(CdO)、鎘錫氧化物(CdSnO
4)或三氧化二鎵(Ga
2O
3)形成。
In this embodiment, the
參照圖3,所述第一反射器50包括複數第一介質層51與複數第二介質層52,所述第一介質層51與所述第二介質層52交替層疊設置且均為導電的。所述第一反射器50的一個第一介質層51與所述發光堆疊層20接觸連接。在所述第一反射器50中,所述第一介質層51的折射率大於所述第二介質層52的折射率。在本實施例中,相互接觸的一個第一介質層51與一個第二介質層52組成一個第一布拉格層,所述複數第一布拉格層組成所述第一反射器50,每一個第一布拉格層中的第一介質層51較第二介質層52更接近所述發光堆疊層20。Referring to FIG. 3 , the
在實施例中,所述第一介質層51的材質為TiO
2:Nb,即所述第一介質層51的材質為摻有鈮(Nb)的氧化鈦(TiO
2),所述第一介質層51的折射率約為2.8;所述第二介質層52的材質為氧化銦錫(In
2O
3:Sn),其折射率約為2.2,滿足所述第一介質層51折射率大於所述第二介質層52的折射率。所述第一介質層51的厚度為
,所述第二介質層52的厚度均為
,其中
為所述發光二極體結構100發射的光的波長,
為所述第一介質層51的折射率,
為所述第二介質層52的折射率。
In an embodiment, the material of the first
如圖1所示,所述發光二極體結構100還包括位於所述基板10遠離所述發光堆疊層20的表面上的第二反射器60。所述第二反射器60為分散式布拉格反射器,所述第二反射器60可以用於將發光堆疊層20產生並傳送至所述第二反射器60的光進行反射。在本實施例中,所述第二反射器60包括依次交替層疊設置的複數第三介質層61與複數第四介質層62,所述第二反射器60的一個第三介質層61與所述基板10接觸連接,所述第三介質層61的折射率大於所述第四介質層62的折射率。交替層疊的複數第三介質層61與複數第四介質層62的結構與圖3中示意的所述第一反射器50的結構相似。在本實施例中,相互接觸一個第三介質層61與一個第四介質層62組成一個第二布拉格層,所述複數第二布拉格層組成所述第二反射器60,每一個第二布拉格層中的第三介質層61較第四介質層62更接近基板10。As shown in FIG. 1 , the light
在本實施例中,所述第三介質層61的厚度為
,所述第四介質層62的厚度均為
,其中
為所述發光二極體結構100發射的光的波長,
為所述第三介質層61的折射率,
為所述第四介質層62的折射率。所述第三介質層61與所述第四介質層62的厚度會受到所述發光二極體結構100發射的光的波長的影響。
In this embodiment, the thickness of the third
在本實施例中,所述第三介質層61與所述第四介質層62為電介質材料層。在一實施例中,所述第三介質層61的材質為氧化鈦(TiO
2),其折射率約為2.8;所述第四介質層62的材質為氧化矽(SiO
2),其折射率為1.4,滿足所述第三介質層61的折射率大於所述第四介質層62的折射率。
In this embodiment, the third
如圖1所示,所述發光堆疊層20還包括依次層疊設置於所述底層21與所述頂層26之間的有源層22、半導體層23與透明導電層24。具體地,所述底層21位於所述基板10上,所述有源層22位於所述底層21與遠離所述基板10的表面,所述半導體層23位於所述有源層22遠離所述底層21的表面,所述透明導電層24位於所述半導體層23遠離所述有源層22的表面,所述頂層26位於所述透明導電層24上且覆蓋所述電流阻擋層25與所述透明導電層24。所述第一反射器50位於作為電流擴散層的頂層26遠離所述透明導電層24的表面上。在本實施例中,所述底層21為半導體材質層,所述頂層26為電流擴散層。As shown in FIG. 1 , the light-emitting stacked
如圖1所示,所述發光堆疊層20還包括位於所述半導體層23上且夾設於所述透明導電層24之間的電流阻擋層25,即所述第二電極40位於所述第一反射器50遠離所述頂層26的表面且正對所述電流阻擋層25設置。As shown in FIG. 1 , the light-
在本實施例中,作為電流擴散層的頂層26可以讓電流平均分佈到第二電極40以外的區域,讓發光區域分佈到第二電極40以外的區域。所述電流阻擋層25直接形成在半導體層23上且接觸所述頂層26,其位置與形狀對應於所述第一電極30,所述電流阻擋層25可以防止電流直接經由第二電極40下方流進半導體層23中,以降底在第二電極40下方產生電子電洞複合的機率,以此,可以提高第二電極40以外區域的出光效率。In this embodiment, the
在本實施例中,所述第一電極30與為半導體材質的底層21歐姆接觸,所述第二電極40與所述半導體層23歐姆接觸。所述底層21與所述半導體層23可分別為n型摻雜的半導體層與p型摻雜的半導體層。相反地,所述底層21與所述半導體層23可分別為p型摻雜的半導體層與n型摻雜的半導體層。所述底層21與所述半導體層23中的每一個可由單層形成,或者可包括具有不同摻雜濃度與組成的多層。所述有源層22可發射具有藉由電子-空穴複合產生的預定能級的光,所述有源層22可以為但不限於量子阱(SQW)結構。In this embodiment, the
在一實施例中,在所述基板10與所述發光堆疊層20之間可設置緩衝層(圖未示),緩衝層用於提高形成發光堆疊層20中的半導體層的結晶度,以及在所述基板10上形成所述發光堆疊層20時保護所述基板10。所述緩衝層可由在底溫下生長的未摻雜的鋁鎵氮化物(AlxGa1-xN)形成。In one embodiment, a buffer layer (not shown) may be disposed between the
進一步參照圖1,所述發光二極體結構100還包括絕緣層70,所述絕緣層70位於所述基板10具有發光堆疊層20的一表面。所述絕緣層70包裹設置於所述基板10上的所述發光堆疊層20,且所述第一電極30與所述第二電極40相對所述絕緣層70露出。即所述絕緣層70包裹依次層疊設置於所述基板10上的所述底層21、所述有源層22、所述半導體層23、所述透明導電層24、所述頂層26。在本實施例中,所述底層21的尺寸大於述所述有源層22、所述半導體層23、所述透明導電層24、所述頂層26、第一反射器50與所述第二電極40,使得所述有源層22、所述半導體層23、所述透明導電層24、所述頂層26與第一反射器50依次層疊設置於所述底層21遠離所述基板10的一側以形成一個層疊結構,並且所述第一電極30與該層疊結構間隔設置於所述底層21上。所述第一電極30與所述層疊結構之間填充有絕緣層70。Further referring to FIG. 1 , the light emitting
在本實施例中,所述絕緣層70為透明絕緣層或非透明絕緣層。所述電流阻擋層25與所述絕緣層為絕緣材料,可以為但不限於SiO
2、SiN
x、Al
2O
3、HfO、TiO
2與ZrO。所述頂層26的材質可以為但不限於氧化銦錫(ITO)、氧化鋅鋁、氧化錫、氧化鎘錫、氧化銻錫以及鎳/金(Ni/Au)。
In this embodiment, the insulating
在本實施例中,所述基板10定義有第一表面101、與第一表面101相對的第二表面102,以及連接於所述第一表面101與所述第二表面102之間的兩個側面103。所述第二反射器60位於所述第二表面102上;所述發光堆疊層20位於所述第一表面101上;所述第一反射器50位於所述發光堆疊層20遠離所述第一表面101的一側;從而使得所述發光二極體結構100發射的光從所述基板10的兩個側面103出射。In this embodiment, the
參照圖4,本發明實施例還提供倒裝的發光二極體結構200,其包括襯板80與所述發光二極體結構100,所述第一電極30與所述第二電極40朝向並連接所述襯板80的同一表面。所述襯板80上設置有複數導電走線(圖未示),所述第一電極30與所述第二電極40與所述襯板80上的導電走線電性連接,且所述發光二極體結構200藉由所述導電走線獲取其發光所需的電壓或電流信號。Referring to FIG. 4 , an embodiment of the present invention further provides a flip-chip light emitting
以上實施例僅用以說明本發明的技術方案而非限制,圖示中出現的上、下、左及右方向僅為了方便理解,儘管參照較佳實施例對本發明進行了詳細說明,本領域的普通技術人員應當理解,可以對本發明的技術方案進行修改或等同替換,而不脫離本發明技術方案的精神和範圍。The above embodiments are only used to illustrate the technical solutions of the present invention and not to limit them. The up, down, left and right directions appearing in the figures are only for the convenience of understanding. Although the present invention has been described in detail with reference to the preferred embodiments, the Those of ordinary skill should understand that the technical solutions of the present invention may be modified or equivalently replaced without departing from the spirit and scope of the technical solutions of the present invention.
100、200:發光二極體結構 10:基板 101:第一表面 102:第二表面 103:側面 104:微結構 20:發光堆疊層 21:底層 22:有源層 23:半導體層 24:透明導電層 25:電流阻擋層 26:頂層 30:第一電極 40:第二電極 50:第一反射器 51:第一介質層 52:第二介質層 60:第二反射器 61:第三介質層 62:第四介質層 70:絕緣層 80:襯板 100, 200: LED structure 10: Substrate 101: First Surface 102: Second Surface 103: Side 104: Microstructure 20: Light Emitting Stacked Layers 21: Ground Floor 22: Active layer 23: Semiconductor layer 24: Transparent conductive layer 25: Current blocking layer 26: Top Floor 30: The first electrode 40: Second electrode 50: First reflector 51: The first dielectric layer 52: Second dielectric layer 60: Second reflector 61: The third dielectric layer 62: Fourth dielectric layer 70: Insulation layer 80: Liner
圖1為本發明實施例的發光二極體結構的示意圖。FIG. 1 is a schematic diagram of a light emitting diode structure according to an embodiment of the present invention.
圖2為本發明實施例的發光二極體結構的第一反射器出現裂縫的示意圖。FIG. 2 is a schematic diagram of cracks appearing in the first reflector of the light emitting diode structure according to an embodiment of the present invention.
圖3為本發明實施例的發光二極體結構的第一反射器的複數第一介質層與複數第二介質層的結構示意圖。3 is a schematic structural diagram of a plurality of first dielectric layers and a plurality of second dielectric layers of a first reflector of a light-emitting diode structure according to an embodiment of the present invention.
圖4為本發明實施例的倒裝的發光的二極體結構的示意圖。FIG. 4 is a schematic diagram of a flip-chip light-emitting diode structure according to an embodiment of the present invention.
100:發光二極體結構 100: Light Emitting Diode Structure
10:基板 10: Substrate
101:第一表面 101: First Surface
102:第二表面 102: Second Surface
103:側面 103: Side
104:微結構 104: Microstructure
20:發光堆疊層 20: Light Emitting Stacked Layers
21:底層 21: Ground Floor
22:有源層 22: Active layer
23:半導體層 23: Semiconductor layer
24:透明導電層 24: Transparent conductive layer
25:電流阻擋層 25: Current blocking layer
26:頂層 26: Top Floor
30:第一電極 30: The first electrode
40:第二電極 40: Second electrode
50:第一反射器 50: First reflector
60:第二反射器 60: Second reflector
70:絕緣層 70: Insulation layer
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