TW202218066A - 晶圓級封裝應用之光子剝離 - Google Patents
晶圓級封裝應用之光子剝離 Download PDFInfo
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- TW202218066A TW202218066A TW110138551A TW110138551A TW202218066A TW 202218066 A TW202218066 A TW 202218066A TW 110138551 A TW110138551 A TW 110138551A TW 110138551 A TW110138551 A TW 110138551A TW 202218066 A TW202218066 A TW 202218066A
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Abstract
本發明描述一種使用適用於晶圓級封裝應用之高強度脈衝寬帶光系統來分離載體及裝置基板之方法。載體基板為透明晶圓,在該晶圓之一側上具有光吸收層。該方法利用高強度光快速加熱光吸收層,以分解或熔化與光吸收層相鄰之接合材料層。在暴露於光之後,可用很小的力或無須用力將載體基板從裝置晶圓之表面提起。
Description
本發明關於用於半導體製造及封裝之暫時性晶圓接合及剝離製程。
[相關申請案]
本案請求2020年10月16日提申之題為PHOTONIC DEBONDING FOR WAFER-LEVEL PACKAGING APPLICATIONS之美國暫時性專利申請案第63/092,863號,及2021年10月12日提申之題為PHOTONIC DEBONDING FOR WAFER-LEVEL PACKAGING APPLICATIONS之美國暫時性專利申請案第63/254,777之優先權權利,其各自以引用方式全文併入本文中。
暫時性晶圓接合(temporary wafer bonding;TWB)通常是指藉由聚合物接合材料將裝置晶圓或微電子基板附接到載體晶圓或基板之製程。在接合之後,裝置晶圓可經變薄(典型地小於50 μm)及/或經處理以在其背面產生矽通孔(through-silicon vias;TSV)、再分佈層、銲墊及其他電路特徵。載體晶圓在背面處理期間支撐易碎的裝置晶圓,其會承擔環境溫度與高溫(>250°C)之間之反覆循環、晶圓處理及轉移步驟產生之機械衝擊以及強機械力,諸如在用於使裝置晶圓變薄之晶圓背面研磨製程期間所施加之強機械力。當所有處理都完成後,通常將裝置晶圓附接在薄膜框架上,然後與載體晶圓分離或剝離,並在進一步操作之前進行清洗。
大多數TWB製程在裝置基板與載體基板之間使用一層或二層。取決於TWB製程,可藉由多種分離方法來分離裝置及載體基板,諸如化學剝離、熱滑動剝離、機械剝離或雷射剝離。雷射剝離為剝離之一種較佳方法。此種方法典型地使用300到400 nm之雷射或其他光源來燒蝕一小層聚合物,該聚合物層旨在在燒蝕波長下與雷射發生反應,致使結構內之接合完整性失去,並允許其在不施加機械力之情況下分開。在二層雷射剝離系統之情況下,使用第二聚合物接合材料層,其典型地與裝置表面相鄰。在處理後雷射敏感層被破壞並且接合之晶圓對分離之後,可將第二層容易地從裝置晶圓表面清除。
雷射剝離提供了諸如低應力剝離、高輸送量、使用二層及單層材料系統之靈活性以及使用交聯材料之能力等優點。然而,雷射剝離並非沒有缺點。為了使用此種剝離機制,需要對雷射波長透明之載體基板,這在某些情況下可能會致使工具對準問題。此外,用於雷射剝離之材料必須與有關之雷射發生反應,若其在所需波長下不能充分吸收,還存在雷射能量損壞雷射敏感裝置之問題,這會是一個很大的問題。
本發明廣泛地涉及一種暫時性剝離方法。該方法包含提供堆疊,該堆疊包含具有第一及第二表面之裝置基板,與第一表面相鄰之接合層,具有前表面及後表面之透明基板,及具有第一及第二側之光吸收層。光吸收層之第一側與透明基板之前表面相鄰,且光吸收層之第二側與接合層相鄰。將接合層暴露於寬帶光脈衝以促使裝置基板及透明基板分離。
本發明涉及一種使用脈衝光源(諸如閃光燈)剝離之暫時性接合方法。該方法在微電子製造製程(包括晶圓級封裝應用)中很有用。
更詳細描述並參考圖1(a)(未按比例),以示意性截面視圖描繪前驅物結構10。結構10包括裝置基板12。基板12具有第一表面14及第二表面16。雖然裝置基板12可為任何形狀,但其典型地為圓形形狀。較佳的裝置基板12包括諸如由以下所製成之裝置基板:矽、氧化矽、氮化矽、氮氧化矽、矽鍺、砷化鎵、石英、鋁、鎢、矽化鎢、砷化鎵、鍺、鉭、氮化鉭、Ti
3N
4、鉿、HfO
2、釕、磷化銦、玻璃或上述物質之混合物。較佳的裝置基板12為其裝置表面包含選自以下之裝置陣列(未示出)之者:積體電路、MEMS、微感測器、功率半導體、發光二極體、光子電路、內插件、嵌入式被動元件、及在矽及其他半導體材料,諸如矽鍺、砷化鎵及氮化鎵上或自矽及其他半導體材料,諸如矽鍺、砷化鎵及氮化鎵所製造之其他微裝置。該等裝置之表面通常包含由以下材料中之一或多者所形成之結構(同樣未示出):矽、多晶矽、二氧化矽、氮氧化矽、金屬(例如,銅、鋁、金、鎢、鉭)、低-k介電質、聚合物介電質以及各種金屬氮化物及矽化物。基板12之裝置表面還可包括選自以下之至少一種結構:焊料凸塊、金屬桿、金屬柱、及由選自由矽、多晶矽、二氧化矽、氮氧化矽、金屬、低-k介電質、聚合物介電質、金屬氮化物及金屬矽化物組成之群之材料所形成之結構。
如圖1(a)所示,將接合組成物施加到裝置基板12以形成與第一表面14相鄰之接合層18。接合層18具有遠離裝置基板12之上表面20,並且較佳地,接合層18直接形成在第一表面14上(即,接合層18與裝置基板12之間沒有任何中間層)。可藉由任何已知的方法施加接合組成物,一種較佳的方法為以約200 rpm至約5,000 rpm,較佳約500 rpm至約3,000 rpm之速度旋塗組成物約5秒至約120秒,較佳約30秒至約90秒之時間段。在施加組成物之後,較佳將其加熱至約50°C至約250°C,更佳約80°C至約220°C之溫度並持續約60秒至約8分鐘,較佳約90秒至約6分鐘之時間段。取決於用於形成接合層之組成物,烘烤亦可引發交聯反應以固化接合層18。在一些具體實例中,取決於所用之組成物,較佳對接合層18進行多階段烘烤製程。此外,在一些情況下,可在組成物之另一等分試樣上重複上述施加及烘烤製程,從而以多個步驟在裝置基板12上“構建”接合層18。在又另一個具體實例中,可以預成型之乾膜之形式而非旋塗之形式提供接合層18。然後可將該膜黏合到裝置基板12。
形成接合層18之材料應能夠與裝置基板12形成牢固的接合。對於用作接合層18,任何具有如ASTM D4541/D7234所測定之大於約15 psig,較佳約50 psig至約250 psig,更佳約100 psig至約150 psig之黏合強度之材料為所欲的。
有利地,用於形成接合層18之組成物可選自市售的接合組成物,其能夠形成具有上述黏合性質,同時可藉由熱及/或溶劑去除之層。
在一個具體實例中,接合層組成物為熱塑性的。典型此類組成物為有機的並將包含溶解或分散在具有其他視情況選用之成分之溶劑系統中之聚合物或寡聚物。聚合物或寡聚物典型地選自由以下聚合物及寡聚物組成之群:環烯烴、環氧樹脂、丙烯酸樹脂、聚矽氧、苯乙烯、乙烯基鹵化物、乙烯基酯、聚醯胺、聚醯亞胺、聚碸、聚醚碸、環烯烴、聚烯烴橡膠、聚氨酯、乙烯-丙烯橡膠、聚醯胺酯、聚醯亞胺酯、聚縮醛、聚甲亞胺、聚酮縮苯胺(polyketanil)、聚乙烯醇縮丁醛及其組合。典型的溶劑系統將取決於聚合物或寡聚物之選擇。以組成物之總重量為100重量%計,組成物之典型固體含量範圍為約1重量%至約60重量%,較佳約3重量%至約40重量%。
較佳的熱塑性組成物在室溫下之複數黏度為至少約500,000 Pa.s,更佳約1,000,000 Pa.s至約3,000,000 Pa.s,並且在約160°C至約200°C之溫度下之複數黏度為小於約15,000 Pa.s,更佳約500 Pa.s至約10,000 Pa.s。複數黏度較佳用流變儀測量,諸如TA Instruments以名稱AR-2000ex流變儀出售之流變儀。
較佳的熱塑性組成物應具有如熱重分析所測定之約160°C至約500°C,更佳約220°C至約450°C之熱分解溫度。一些合適的組成物描述於美國專利申請案2008/0173970、2019/0194453及2020/0257202,以及美國專利7,935,780、8,092,628、8,268,449、9,496,164、9,728,439、9,827,740、10,103,048及10,304,720中,其各自以引用方式併入本文中。
在一個具體實例中,用於形成接合層18之組成物為可固化的及/或可交聯的。典型地,此類組成物為有機的並將包含溶解或分散在具有其他視情況選用之成分之溶劑系統中之聚合物或寡聚物。聚合物或寡聚物典型地選自由以下聚合物及寡聚物組成之群:環烯烴、環氧樹脂、丙烯酸樹脂、聚矽氧、苯乙烯、乙烯基酯、聚醯胺、聚醯亞胺、聚碸、聚醚碸、環烯烴、聚烯烴橡膠、聚氨酯、乙烯-丙烯橡膠、聚醯胺酯、聚甲亞胺、聚酮縮苯胺、聚醯亞胺酯及其組合。典型的溶劑系統將再次取決於聚合物或寡聚物之選擇。以組成物之總重量為100重量%計,組成物之典型固體含量範圍為約1重量%至約60重量%,較佳約3重量%至約40重量%。較佳的可交聯組成物在室溫下之複數黏度為至少約100 Pa.s、更佳約1000 Pa.s至約30,000 Pa.s,並且在約40°C至約80°C之溫度下之複數黏度為小於約15,000 Pa.s,更佳約100 Pa.s至約10,000 Pa.s。較佳的可交聯組成物應具有約160°C至約500°C,更佳約220°C至約450°C之熱分解溫度。一些合適的組成物描述於美國專利申請案2008/0173970、2019/0194453及2020/0257202,以及美國專利7,935,780、8,092,628、8,268,449、9,496,164、9,728,439、9,827,740、10,103,048及10,304,720中,其各自以引用方式併入本文中。
在另一個具體實例中,接合材料可為非聚合的(例如,寡聚的、三聚的、二聚的、單體的)。即,該具體實例中所用之分子結構將具有三個或更少個重複次單元,較佳二個或更少個重複次單元,更佳僅一個次單元。當使用非聚合物接合材料時,接合材料之熔點應低於其昇華點。在該具體實例中,材料較佳具有交聯或進一步反應之能力以防止材料在高溫下昇華。較佳的非聚合物組成物應具有約160°C至約500°C,更佳約220°C至約450°C之熱分解溫度。一些合適的組成物描述於美國專利申請案2021/0033975,其以引用方式併入本文中。
不管使用聚合物接合材料或非聚合物接合材料,接合層18較佳地具有接合及剝離所需之機械性質之正確平衡。較佳地,接合材料之T
g為約25°C至約300°C,更佳約30°C至約250°C。若材料之T
g太低,則可能會致使材料太軟,暴露後由於介面發熱使材料重熔或材料在室溫下黏度太低,從而可能致使載體晶圓及裝置晶圓重新附著。若材料之T
g太高,則材料可能太硬而無法充分熔化以實現接合。在某些情況下,高T
g亦可能與高熱分解相關。若熱分解太高,由於在接合材料-光吸收層介面處產生之熱量不足以促進介面處之材料分解,則可能致使裝置晶圓與載體晶圓之間不分離。
不管具體實例如何,經固化或乾燥之接合層18應具有約1 μm至約200 μm,更佳約5 μm至約100 μm,甚至更佳約10 µm至約50 µm之平均厚度(在五個位置測量)。可使用任何膜厚度測量工具來測量本文所用之厚度,一種較佳的工具為紅外線干涉儀,諸如由SUSS Microtec或Foothill所出售之紅外線干涉儀。
接合層18亦應具有低總厚度變異(total thickness variation;TTV),此意指著層18之最厚點及最薄點彼此之間並無顯著差異。TTV較佳藉由測量膜上多個點或位置之厚度所計算,較佳至少約50個點或約50個點,更佳至少約100個點或約100個點,甚至更佳至少約1,000點或約1,000點。在這些點所獲得之最高與最低厚度測量值之間之差異被指定為該特定層之TTV測量值。在某些TTV測量實例中,可能會從計算中刪除邊緣排除或異常值。在這些情況下,所包括之測量值之數量以百分比表示,亦即,若TTV以包含97%來表示,則最高及最低測量值之3%被排除在外,3%之測量值平均分配在最高及最低測量值之間(即各1.5%)。較佳地,使用約95%至約100%之測量值,更佳約97%至約100%之測量值、甚至更佳約100%之測量值來實現上述TTV範圍。
亦在圖1(a)之示意性截面視圖中描繪第二前驅物結構22。第二前驅物結構22包括透明基板24,其為載體晶圓。透明基板24具有前或載體表面26及後表面28。雖然透明基板24可為任何形狀,但其典型地為圓形形狀並且尺寸與裝置基板12相似。較佳的透明基板24包括透明玻璃晶圓或由對光子能量透明之材料所形成之任何其他基板(即,該材料將允許光子能量穿過透明基板24)。即,至少約50%,較佳至少約75%,更佳至少約90%之光子能量應穿透透明基板24。
合適的透明基板24包括但不限於Corning
®EAGLE XG
®玻璃晶圓(可從Corning Incorporated獲得)、Gorilla
®Glass(亦可從Corning Incorporated獲得)、石英、藍寶石及其組合。透明基板24之熱膨脹係數(coefficient of thermal expansion;CTE)將較佳基於裝置基板12之CTE來選擇。透明基板24之典型CTE值為約5×10
-7/K至約2x10
-5/K,更佳約1x10
-6/K至約6x10
-6/K。
將光吸收層30施加到透明基板24之前表面26。光吸收層30具有第一側32及第二側34,第一側32與透明基板24之前表面26接觸。光吸收層30較佳包含金屬,取決於具體實例,其可為單一金屬、二種以上金屬及/或金屬氧化物合金。在一個具體實例中,光吸收層30包含純金屬。在其他具體實例中,其包含金屬及其他元素之混合物,金屬之總含量以光吸收層30之總重量為100重量%計為至少約50重量%,較佳至少約75重量%,更佳至少約90重量%。
任何在所述波長處吸收光並將其轉化為熱之金屬皆適用於本方法。較佳的金屬包括選自鈦、鎢、鋁、銅、金、銀、鐵、錫、鋅、鈷、鉻、鍺、鈀、鉑、銠、錳、鎳、矽、碲、上述之氧化物、上述之合金以及其組合。Ti/W特別較佳用作光吸收層30。
在一個具體實例中,光吸收層30為約25 nm至約300 nm厚,更佳約150 nm至約200 nm厚。光吸收層30之CTE(如熱機械分析所測量)為約1×10
-6/K至約20×10
-6/K,更佳約4.5×10
-6/K至約4.8×10
-6/K。透明基板24及光吸收層30較佳被選擇為在高溫下為熱穩定的並且具有緊密匹配之CTE,以在光吸收層被加熱時減輕光吸收層從載體之開裂或分層。即,光吸收層30之CTE在透明基板24之CTE之約+/-30%以內,並且更佳地在約+/-10%以內。
可藉由任何合適的方法施加金屬以形成光吸收層30,包括但不限於濺射、氣相沉積(PCVD)、熱蒸發、原子層沉積(atomic layer deposition;ALD)及電鍍。一個特別較佳的光吸收層30為約200 nm厚之層,其由約10%之鈦及約90%之鎢組成,較佳藉由濺射施加。
然後藉由以面對面之關係將結構10及22壓在一起而接合結構10及22,使得接合層18之上表面20與光吸收層30之第二側34接觸(參見圖1(b))。在加壓之同時,施加足夠的壓力及熱並持續足夠長的時間,以便將二個結構10及22接合在一起以形成接合堆疊36。接合參數將根據接合組成物及基板而變化,但該步驟期間之典型溫度範圍為約25°C至約250°C,較佳約150°C至約220°C,典型壓力範圍為約1,000 N至約25,000 N,較佳約3,000 N至約20,000 N,時間段為約30秒至約20分鐘,較佳約1分鐘至約10分鐘。
接合堆疊36之TTV應小於接合堆疊36之總平均厚度(在堆疊之五個位置處測量)之約10%,較佳小於總平均厚度之約5%,甚至更佳小於總平均厚度之約3%。亦即,若接合堆疊36具有100 μm之平均厚度,則小於約10%之TTV將為約10 μm或更低。
在此階段,可安全地處理裝置基板12並將其經受進一步處理,否則可能會損壞裝置基板12而無法接合到透明基板24。因此,該結構可在不分離裝置及透明載體基板12、24,並且不滲透任何在該等後續處理步驟期間所遇到之化學物質之情況下安全地經受背面處理,諸如背面研磨、PCVD、CMP、蝕刻、金屬及介電質沉積、圖案化(例如,光刻、通孔蝕刻)、鈍化、退火、晶粒黏著及其組合。在一個具體實例中,裝置基板12亦可附接到第二支撐基板,諸如薄膜框架或第二載體基板(未顯示)。接合層18不僅可經受該等製程,其亦可經受高達約400°C,較佳約150°C至350°C,更佳約180°C至約300°C之處理溫度。
一旦處理完成,裝置基板12及載體基板24就可剝離及分離。如圖1(c)所示,光源38(例如閃光燈,較佳地不為雷射或任何其他呈現相干光束之光源)用於將透明基板24之後表面28暴露於高強度寬帶光40。合適的光源38包括閃光燈及/或其他非相干光源,其傳輸在光譜上波長範圍較佳為約250 nm至約1,500 nm,較佳約250 nm至約1,000 nm之寬帶光。一種特別較佳的閃光燈為於美國專利10,986,698及美國專利申請案17/122,796中所述之包括氙氣閃光燈之NovaCentrix PulseForge
®系統,其各自以引用方式併入本文中。
在暴露期間,將一或多個高強度光脈衝導向透明基板24之後表面28。該光將穿過透明基板24,接觸光吸收層30,快速加熱光吸收層30。即,光吸收層30具有緊接在施加光脈衝之前之第一溫度,並且施加光脈衝致使溫度升高到高於第一溫度之第二溫度。較佳地,第二溫度比第一個溫度高至少約400°C,更佳地至少約500°C,甚至更佳地約600°C至約1,000°C,最佳地約650°C至約750°C。這種溫度升高幾乎是瞬間發生的(例如,小於約1,000 μs,較佳小於約750 μs,更佳小於約500 μs)。應當理解,此種快速溫度升高致使少量的接合層18熔化及/或分解。在一個具體實例中,光吸收層30所經歷之光脈衝及溫度升高都不會在接合組成物層18中引起任何化學反應。較佳地,光吸收層30吸收盡可能多之光脈衝,其可允許使用較短的脈衝長度。
合適的脈衝長度較佳為約40 μs至約250 μs,更佳約60 μs至約150 μs。有利地,較佳地,脈衝之數量為五個或更少個,更佳地為三個或更少個,甚至更佳地為二個或更少個,甚至更佳地僅為一個脈衝。特別較佳地,以上述脈衝長度範圍,在這些範圍之任何組合中來實施該數量之脈衝。
合適的電壓較佳為約600V至約1200V,更佳約850V至約1050V。較佳的能量密度為約2 J/cm
2至約7 J/cm
2,更佳約2 J/cm
2約6 J/cm
2,甚至更佳約3.5 J/cm
2至約5 J/cm
2。光脈衝之合適波長為約200 nm至約1,500 nm。光脈衝之峰值輻射功率較佳為至少約20 KW/cm
2,更佳至少約30 KW/cm
2,甚至更佳至少約40 KW/cm
2。
有利地,可同時暴露整個晶圓,這可致使高產量。即,光源38可被配置及定尺寸使得暴露或照射區域至少為透明基板24之後表面28之尺寸,使得整個後表面28與光脈衝接觸,如圖1(c)所示。若使用燈具有小於後表面28之表面積之暴露面積之系統,則可實施多個脈衝步驟,移動堆疊36及/或燈38直到所有後表面28暴露在一或多種脈衝光下。或者,可配置多個燈來產生更大的暴露區域。例如,一種合適的Novacentrix PulseForge
®系統具有暴露面積為150 mm x 75 mm之閃光燈。可平行放置二或多個燈,以75 mm之增量增加該區域。
在較佳具體實例中,基於基板12及/或24之直徑選擇暴露面積。因此,4吋基板之暴露面積較佳為約81 cm
2或更大,並且6吋基板之暴露面積較佳為約182 cm
2或更大。8吋基板之暴露面積較佳為約324 cm
2或更大,並且12吋基板之暴露面積較佳為約729 cm
2或更大。
在另一個具體實例中,透明基板24之後表面28具有總表面積,接觸後表面28之光之暴露面積為後表面28之總表面積之至少約40%,較佳至少約50%,更佳至少約75%,最佳至少約90%。
在暴露於高強度光之後,光吸收層30迅速冷卻,並且可使用很少甚至不使用機械力或其他力來分離透明基板24及裝置基板12。在較佳具體實例中,可單獨使用重力來致使此分離。無論如何,較佳在開始暴露後約5秒或更短、較佳約3秒或更短、更佳約1秒或更短內發生分離。
分離致使具有光吸收層30之透明基板24從裝置基板12上去除,留下具有接合組成物層18之裝置基板12及具有光吸收層30之透明基板24,如圖1(d))所示。在一些應用中,可能需要將裝置基板12附接到切割帶或類似結構。
在分離之後,可用電漿蝕刻或能夠溶解接合層之溶劑去除任何剩餘的接合層18。對於電漿清洗,可在100W或更高之功率下單獨使用O
2電漿或以約1:1至約10:1之比率使用O
2電漿及氟化氣體之組合。可藉由浴或旋轉清洗製程進行溶劑清洗。用於非極性接合材料之合適溶劑包括例如d-檸檬烯、均三甲苯、1-十二烯及其組合。用於清洗極性接合材料之合適溶劑包括γ-丁內酯(gamma-butyrolactone;GBL)、環戊酮、苯甲醇、二甲亞碸(dimethylsulfoxide;DMSO)、環己酮、丙二醇甲醚(propylene glycol methyl ether;PGME)、丙二醇甲醚乙酸酯(propylene glycol methyl ether acetate;PGMEA)、n-甲基-2-吡咯啶酮(n-methyl-2- pyrrolidone;NMP)、1,3-二氧戊環(1,3-dioxolane)及其組合。當使用旋轉清洗製程時,較佳進行約1分鐘至約15分鐘之清洗時間。在旋轉清洗製程中,將溶劑以攪拌及浸泡循環之組合噴灑在晶圓之中心,然後被旋轉掉。對於攪拌及浸泡循環,將溶劑噴灑在晶圓之中心並以約20 rpm至約150 rpm之旋轉速度攪拌出來,並且在沒有溶劑噴灑或旋轉晶圓之情況下浸泡約30秒至約90秒。在最後步驟中,將溶劑分配在基板之中心,並以約750 rpm至約1,500 rpm之旋轉速度旋轉基板。
具有光吸收層30之透明基板24亦可藉由溶劑或乾蝕刻以少量清洗製程重新使用。當使用溶劑清洗時,可以包括例如以下之溶劑使用旋轉清洗製程:環戊酮、GBL、環己酮、d-檸檬烯、丙酮、異丙醇、三甲基苯、PGMEA、PGME、NMP、1,3-二氧戊環、苯甲醇、DMSO及其組合。可清洗透明載體基板24之總時間為約5秒至約120秒,更佳約15秒至約45秒。當使用乾蝕刻時,可使用諸如O
2、氬氣、CF
4、N
2及其組合之氣體類型。乾蝕刻清洗製程之合適參數包括約50W至約2,000W,更佳約150W至約1250W之功率;約5秒至約90秒,更佳約10秒至約60秒之時間;小於約150 mTorr之壓力;及約10 sccm至300 sccm,更佳約20 sccm至約100 sccm之氣體流速。
在上述製程中,將接合層18形成在裝置基板12之第一表面14上。應當理解,可將接合層18形成在光吸收層30之第二側34上,然後可將裝置基板12接合到接合層18。
在基板翻轉製程中,可在裝置基板12之第二表面16上而非在第一表面14上形成接合層18,如圖1(a)所示。在該基板翻轉製程中,仍通過接合層18將結構10接合到結構22。
在進一步變型中,結構10或22中之一者或二者可被提供為“預成型”,使得裝置製造不必在現場形成接合層18或光吸收層30中之一者或二者。
應當理解,所揭示之方法提供優於先前技術方法之顯著優點。例如,本發明之方法在剝離製程期間在裝置上提供低力及低應力。此外,所揭示之方法與先前技術之剝離方法相比非常快,與先前技術剝離方法之幾分鐘相比,該剝離可在幾秒鐘內發生。此外,在一些具體實例中,使用Ti/W或其他金屬於光吸收層30中或作為光吸收層30可有助於感測器工具對準。最後,大量種類之材料皆可用作接合層18,因為該層無需與另一種材料低附著或無需與雷射反應。
在閱讀本文之所揭示內容及下面之工作實施例後,各種具體實例之其他優點對於本領域技術人員來說將是顯而易見的。應當理解,除非本文另有說明,否則本文描述之各種具體實例不一定是相互排斥的。例如,在一個具體實例中描述或描繪之特徵亦可包括在其他具體實例中,但並非必須包括。因此,本發明涵蓋本文所述之特定具體實例之多種組合及/或集成。
如本文所用,術語「及/或」在二或多個項目之列表中使用時表示可單獨使用所列項目中之任何一者或可使用所列項目中之二或多個之任何組合。例如,若組成物被描述為包含或不包含組分A、B及/或C,則該組成物可包含或不包含單獨A;單獨B;單獨C;A及B組合;A及C組合;B及C組合;或A、B及C組合。
本說明書亦使用數值範圍來量化與各種具體實例相關之某些參數。應當理解,當提供數值範圍時,該等範圍將被解釋為針對僅記載範圍下限值之請求項限制以及僅記載範圍上限值之請求項限制提供字面支援。例如,所揭示之約10至約100之數字範圍為針對記載「大於約10」(無上限)之請求項以及記載「小於約100」(無下限)之請求項提供字面支援。
實施例
以下實施例闡述了根據本發明之方法。然而,應當理解,該等實施例係藉由說明之方式所提供,不應將其中之任何內容視為對整體範圍之限制。
實施例1
用於光子剝離測試之4吋晶圓之製備
藉由以3,000 rpm/s之加速度以1,000 rpm之速度旋塗30秒,將實驗性基於苯氧基之接合材料(“材料A”,Brewer Science, Inc.,Rolla,MO)塗佈在4吋矽晶圓上,然後在60°C下烘烤5分鐘,然後在160°C下烘烤5分鐘,然後在220°C下烘烤5分鐘。然後將晶圓接合到6”x6”方形玻璃面板之中心,方形面板之一側帶有Ti/W濺射塗層。在220°C及2,000N下,使用Apogee™ Bonder將晶圓與晶圓之塗層面朝向面板之Ti/W面接合3分鐘。接合堆疊顯示出高附著力並且無法藉由插入剃刀刀片手動分離。
實施例2
用於光子剝離測試之4吋晶圓之製備
藉由以500 rpm/s之加速度以1,000 rpm之速度旋塗30秒,將市售之接合材料(BrewerBOND
®305,以下稱為“材料B”,Brewer Science, Inc.,Rolla,MO)塗佈在4吋矽晶圓上,然後在60°C下烘烤3分鐘,然後在160°C下烘烤3分鐘,然後在220°C下烘烤3分鐘。然後將晶圓接合到6”x6”方形玻璃面板之中心,方形面板之一側帶有Ti/W濺射塗層。在220°C及1,800N下,使用Apogee™ Bonder將晶圓與晶圓之塗層面朝向面板之Ti/W面接合3分鐘。接合堆疊顯示出高附著力並且無法藉由插入剃刀刀片手動分離而分離。
實施例3
用於光子剝離測試之4吋晶圓之製備
藉由以500 rpm/s之加速度以650 rpm之速度旋塗30秒,將實驗性基於聚酯之接合材料(“材料C”,Brewer Science, Inc.,Rolla,MO)塗佈在4吋矽晶圓上,然後在80°C下烘烤3分鐘,然後在160°C下烘烤3分鐘,然後在200°C下烘烤6分鐘。然後將晶圓接合到6”x6”方形玻璃面板之中心,方形面板之一側帶有Ti/W濺射塗層。在140°C及1,000N下,使用Apogee™ Bonder將晶圓與晶圓之塗層面朝向面板之Ti/W面接合3分鐘。接合堆疊顯示出高附著力並且無法藉由插入剃刀刀片手動分離。
實施例4
接合晶圓之光子剝離分離
使用NovaCentrix PulseForge
®3300光子固化系統對實施例1、2及3中製備之接合堆疊進行剝離,該系統配置有暴露區域,可在單個脈衝中覆蓋4吋載體晶圓之整個表面。表1顯示了用於光子剝離接合堆疊之結果及製程條件。
表1.光子剝離製程後4吋晶圓對之製程條件
*除非另有說明,否則僅使用單個脈衝。
**三回合單脈衝。
材料 | 電壓(V) | 脈衝長度(µs)* | 脈衝形狀註釋 | 經測量之能量密度(J/cm 2) | 附著力損失 | 晶圓分離 | 註釋 |
材料A - 晶圓1 | 950 | 110 | 1x | 4.02 | 有 | 有 | 暴露三次** |
材料A - 晶圓2 | 950 | 110 | 1x | 4.02 | 有 | 無 | |
材料B - 晶圓1 | 950 | 130 | 1x | 4.99 | 有 | 有 | |
材料B - 晶圓2 | 950 | 110 | 1x | 4.02 | 無 | 無 | |
材料C - 晶圓1 | 950 | 110 | 1x | 4.02 | 有 | 無 |
如表1中所用,術語「附著力損失」是指材料失去與Ti/W濺射基板之附著力,但仍藉由靜電附著。「晶圓分離」是指晶圓不再對基板具有任何形式之靜態附著力,並且能夠藉由簡單地翻轉基板來移除。圖2顯示了成功分離之接合對之圖像,其中材料A用作接合材料。
實施例5
清洗來自實施例4之經光子剝離之樣品
對來自實施例4之經剝離之樣品進行清洗評估,以驗證在光子暴露製程之後可從矽晶圓上去除材料。對於該測試,使用旋轉清洗製程清洗材料A及材料C,而使用浸泡製程清洗材料B。
將材料B晶圓在D-檸檬烯中浸泡12小時,然後用少量D-檸檬烯及丙酮沖洗以乾燥晶圓。在晶圓乾燥後,目視檢查並無觀察到聚合物殘留物。
材料A及材料C均使用環戊酮進行旋轉清洗,包含在晶圓上噴灑一致之環戊酮流2分鐘,然後用IPA清洗15秒,然後旋轉乾燥15秒。對晶圓進行目視檢查並顯示表面上沒有殘留聚合物。圖3顯示了藉由該環戊酮及IPA清洗製程清洗前後之晶圓實施例。
實施例6
用於光子剝離測試之6吋晶圓之製備
分別使用與實施例1及3相同之製程將材料A及C塗佈在6吋矽晶圓上並接合到6吋Ti/W濺射玻璃晶圓上。圖4顯示了使用材料C接合之接合對之實施例。然後在評估剝離製程之前將晶圓放在薄膜框架上。
實施例7
實施例6接合晶圓之光子剝離分離
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®3300光子固化系統對實施例6中製備之接合晶圓對進行剝離,該系統配置有暴露區域,在單個脈衝中覆蓋6吋載體晶圓之整個表面。在此評估期間,晶圓亦被放置在帶有膠帶襯墊之薄膜框架上,以模擬許多半導體製造製程中發生之晶圓載體,驗證這些晶圓在使用薄膜框架之情況下不會有問題。在暴露期間,薄膜框架被遮蔽,暴露過程沒有出現任何問題。表2顯示了用於將接合堆疊進行光子剝離之結果及製程條件。圖5顯示了成功分離之對之圖像,其中薄膜框架上之矽晶圓已與材料C接合。
表2.光子剝離製程後6吋晶圓對之製程條件
*除非另有說明,否則僅使用單個脈衝。
**三回合單脈衝
實施例8
用於光子剝離測試之6吋薄晶圓之製備
材料 | 電壓(V) | 脈衝長度(µs)* | 脈衝形狀註釋 | 經測量之能量密度(J/cm 2) | 附著力損失 | 晶圓分離 | 註釋 |
材料A - 晶圓2 | 950 | 130 | 1x | 4.99 | 有 | 有 | |
材料A - 晶圓3 | 950 | 150 | 1x | 6.00 | 有 | 有 | |
材料C - 晶圓1 | 950 | 130 | 1x | 4.99 | 有 | 有 | 對於製程調整進行暴露3次** |
材料C - 晶圓2 | 950 | 130 | 1x | 4.99 | 有 | 無 | |
材料C - 晶圓3 | 950 | 150 | 1x | 6.00 | 有 | 有 |
將材料A及C塗佈在6吋緊密TTV矽晶圓上(總厚度變化小於2 µm),並分別使用與實施例1及3相同之製程與6吋Ti-/W濺射玻璃晶圓接合。在接合製程之後,將晶圓對進行背面研磨,矽晶圓變薄至70 µm之目標厚度。變薄至70 µm後,使用IRT感測器(即干涉式膜厚度感測器)在FRT microProf 300計量工具(來自Form Factor, Inc.)上檢查晶圓對之矽厚度,以確認變薄的矽之平均厚度值。晶圓之平均厚度為67.9 µm。使用材料A接合之晶圓之變薄晶圓厚度圖可見於圖6。
實施例9
實施例8變薄的接合晶圓之光子剝離分離
使用NovaCentrix PulseForge
®3300光子固化系統對實施例8中製備之接合晶圓對進行剝離,該系統配置有暴露區域,在單個脈衝中覆蓋6吋載體晶圓之整個表面。在此評估期間,晶圓亦被放置在帶有膠帶背襯之薄膜框架上,以支撐薄晶圓。在暴露期間,薄膜框架被遮蔽,暴露製程沒有出現任何問題。表3顯示了用於將材料A及C之接合堆疊進行光子剝離之結果及製程條件。圖7顯示了成功分離之接合對之圖像,該接合對已與材料A接合,其中未觀察到薄膜框架上之薄矽晶圓及矽背面具有裂紋。
表3.用於光子剝離製程之6吋薄晶圓對之3製程條件
*除非另有說明,否則僅使用單個脈衝。
**亦稱為能量密度。
實施例10
清洗來自實施例9之經光子剝離之晶圓
晶圓 | 材料 | 脈衝電壓(V) | 脈衝持續時間 (µs)* | 脈衝形狀註釋 | 通量(J/cm 2)** |
1 | 材料C | 700 | 400 | 2.0OF,2.5 m/min | 6.06 |
2 | 材料C | 700 | 400 | 1.4OF,2.5 m/min | 6.06 |
3 | 材料C | 700 | 400 | 1.4 OF,2.5 m/min | 6.06 |
4 | 材料C | 700 | 400 | 1.4 OF,2.5 m/min | 6.06 |
5 | 材料C | 700 | 390-400 | 1.4 OF,2.5 m/min | 5.81-6.06 |
6 | 材料C | 950 | 140-200 | 1.4OF,2.5 m/min | 3.95-6.04 |
7 | 材料A | 750 | 300 | 1.4OF,2.5 m/min | 5.32 |
8 | 材料A | 750 | 300 | 1.4OF,2.5 m/min | 5.32 |
9 | 材料A | 750 | 290-300 | 1.4OF,2.5 m/min | 4.8-5.32 |
10 | 材料A | 750 | 300 | 1.4OF,2.5 m/min | 5.32 |
11 | 材料A | 950 | 180 | 1.2-1.4OF,2.5 m/min | 5.34 |
12 | 材料A | 950 | 160-190 | 1.4OF,2.5 m/min | 4.63-5.69 |
使用帶有壓力莢分配系統之旋轉清洗製程清洗來自實施例9之經剝離之晶圓(已與材料A接合之晶圓)。具體而言,使用環戊酮作為清洗溶劑之三步驟清洗製程來清洗晶圓。IPA用作溶劑以幫助晶圓乾燥。用於清洗薄矽晶圓之條件如表4所示。清洗後,目視檢查薄矽晶圓之清潔度。該等圖像如圖8所示。
表4.來自經光子剝離之薄矽晶圓之材料A之清洗製程條件
步驟 | 旋轉速度(rpm) | 時間(s) | 溶劑分配 |
1 | 1,000 | 130 | 環戊酮 |
2 | 1,000 | 15 | IPA |
3 | 1,000 | 15 | 無溶劑 |
[圖1(a)]為可根據本說明書實施之接合方法之示意圖(未按比例);
[圖1(b)]為圖1(a)中所形成之接合堆疊之示意圖;
[圖1(c)]為剝離製程之示意圖,其中將一或多個光子光脈衝引導到圖1(b)之堆疊上;
[圖1(d)]為圖1(c)之堆疊在分離後之示意圖;
[圖2]為顯示來自實施例4之經剝離之晶圓對之一者之照片;
[圖3]為顯示如實施例5所述晶圓在清洗前(左)及清洗後(右)之照片;
[圖4]為如實施例6所述晶圓對在接合後之照片;
[圖5]為如實施例7所述將一對晶圓剝離之照片;
[圖6]為如實施例8所述生成之薄矽晶圓厚度圖之圖像;
[圖7]為經光子剝離之後變薄之6吋晶圓(實施例9)之照片;及
[圖8]為如實施例10所述經光子剝離之晶圓在清洗前(左)及清洗後(右)之照片。
10:前驅物結構
12:裝置基板
14:第一表面
16:第二表面
18:接合層
20:上表面
22:前驅物結構
24:透明基板
26:前或載體表面
28:後表面
30:光吸收層
32:第一側
34:第二側
Claims (21)
- 一種暫時性接合方法,其包含: 提供堆疊,該堆疊包含: 具有第一及第二表面之裝置基板; 與該第一表面相鄰之接合層; 具有前表面及後表面之透明基板;及 具有第一及第二側之光吸收層,該第一側與該前表面相鄰,且該第二側與該接合層相鄰;及 將該接合層暴露於寬帶光脈衝以促使該裝置基板及該透明基板分離。
- 如請求項1之方法,其中該暴露藉由閃光燈實施。
- 如請求項1之方法,其中該暴露包含將該寬帶光脈衝施加至該透明基板之該後表面。
- 如請求項3之方法,其中該透明基板之該後表面具有總表面積,且該寬帶光之暴露面積為該總表面積之至少約40%。
- 如請求項1之方法,其中該寬帶光脈衝之脈衝長度為約40 μs至約250 μs。
- 如請求項1之方法,其中在該暴露期間之能量密度為約2 J/cm 2至約7 J/cm 2。
- 如請求項1之方法,其中該寬帶光脈衝在約200 nm至約1,500 nm之複數個波長上傳輸。
- 如請求項1之方法,其中該光吸收層具有緊接在該暴露之前之第一溫度,並且該暴露致使該光吸收層之溫度升高到第二溫度。
- 如請求項1之方法,其中該暴露致使該接合層軟化以促使該分離。
- 如請求項1之方法,其中該暴露不在該接合層中引起任何化學反應。
- 如請求項1之方法,其中該分離在該暴露約5秒或更短內發生。
- 如請求項1之方法,其中該暴露包含將該接合層暴露於五個或更少個之寬帶光脈衝。
- 如請求項1之方法,其中該寬帶光脈衝之源不為雷射。
- 如請求項1之方法,其中該分離在不施加機械力至該裝置基板或透明基板之情況下發生。
- 如請求項1之方法,其中該光吸收層包含金屬。
- 如請求項15之方法,其中該金屬選自鈦、鎢、鋁、銅、金、銀、鐵、錫、鋅、鈷、鉻、鍺、鈀、鉑、銠、錳、鎳、矽、碲、上述之氧化物、上述之合金以及其組合。
- 如請求項1之方法,其中該提供包含將該接合層形成在該第一表面上,隨後將該接合層與該光吸收層之該第二側接觸以形成該堆疊。
- 如請求項1之方法,其中該提供包含將該光吸收層形成在該明基板之該前表面上,隨後將該光吸收層之該第二側與該接合層接觸以形成該堆疊。
- 如請求項1之方法,其在該暴露之前,在將該裝置基板與該透明基板分離之前,進一步包含將該堆疊經受選自以下之處理:背面研磨、化學機械拋光、蝕刻、金屬化、介電質沉積、圖案化、鈍化、退火、形成再分佈層及其組合。
- 如請求項1之方法,其中該裝置基板之該第一及第二表面之至少一者包含以下中之一或多者: (1) 選自以下之裝置陣列:積體電路;MEMS;微感測器;功率半導體;發光二極體;光子電路;內插件;嵌入式被動元件;及在矽、矽鍺、砷化鎵或氮化鎵上或自矽、矽鍺、砷化鎵或氮化鎵所製造之微裝置;或 (2) 選自以下之至少一種結構:焊料凸塊、金屬桿、金屬柱、及由選自由矽、多晶矽、二氧化矽、氮氧化矽、金屬、低-k介電質、聚合物介電質、金屬氮化物或金屬矽化物組成之群之材料所形成之結構。
- 如請求項1之方法,其中該接合層包含以下中之一或多者: (1) 以下之未交聯之聚合物或寡聚物:環烯烴、環氧樹脂、丙烯酸樹脂、聚矽氧、苯乙烯、乙烯基鹵化物、乙烯基酯、聚醯胺、聚醯亞胺、聚碸、聚醚碸、環烯烴、聚烯烴橡膠、聚氨酯、乙烯-丙烯橡膠、聚醯胺酯、聚醯亞胺酯、聚縮醛、聚甲亞胺、聚酮縮苯胺(polyketanil)、聚乙烯醇縮丁醛或其組合;或 (2) 以下之經交聯之聚合物或寡聚物:環烯烴、環氧樹脂、丙烯酸樹脂、聚矽氧、苯乙烯、乙烯基酯、聚醯胺、聚醯亞胺、聚碸、聚醚碸、環烯烴、聚烯烴橡膠、聚氨酯、乙烯-丙烯橡膠、聚醯胺酯、聚甲亞胺、聚酮縮苯胺、聚醯亞胺酯或其組合。
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US9636782B2 (en) * | 2012-11-28 | 2017-05-02 | International Business Machines Corporation | Wafer debonding using mid-wavelength infrared radiation ablation |
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