TW202217054A - Apparatus and method for processing substrate - Google Patents

Abstract

The present invention relates to a substrate processing apparatus, including: a first chamber where a first processing process is performed on a substrate; a second chamber where a second processing process is performed on the substrate; a first gas injection unit injecting a gas into the first chamber; a second gas injection unit injecting the gas into the second chamber; a gas supply unit supplying the gas; and a path change unit changing a direction of the gas so that the gas of the gas supply unit is supplied to each of the first gas injection unit and the second gas injection unit, and a method of processing a substrate.

Description

Substrate processing apparatus and method

The present invention relates to a substrate processing equipment, which performs processing processes such as deposition process and etching process on a substrate.

Generally, in order to manufacture solar cells, semiconductor devices, flat panel display devices, etc., it is necessary to form a thin film layer, a thin film circuit pattern or a light pattern on a substrate. To this end, processing processes are performed on the substrate, such as a deposition process for depositing a film containing a specific material on the substrate, an exposure process for exposing a portion of the film by using a photosensitive material, and the removal of the film selected from The etching process of the exposed part, etc. Such processing processes are performed on the substrates by substrate processing equipment.

A substrate processing apparatus according to the related art includes a cavity providing a processing space, a supporting unit supporting a substrate, a gas spraying unit spraying gas, and a gas supplying unit supplying gas to the gas spraying unit. When the gas supply unit supplies the gas to the gas spray unit, the gas spray unit sprays the gas toward the support unit. Therefore, the processing process is performed on the substrate supported by the support unit.

Herein, in order to increase the throughput of the processing process performed on the substrate, the substrate processing apparatus according to the related art is implemented to provide a plurality of cavities. In such a case, the substrate processing apparatus according to the related art may include a plurality of gas supply units to supply gas to a plurality of gas spray units provided in the cavities. Therefore, the substrate processing apparatus according to the related art has problems of increased construction costs for constructing the gas supply units and management costs for managing the gas supply units.

technical problem

The present invention is to solve the above-mentioned problems, and to provide a substrate processing apparatus and method, which can reduce the construction cost and management cost for increasing the throughput of the processing process performed on the substrate.

Technical solutions

In order to achieve the above objects, the present invention may include the following requirements.

The substrate processing apparatus according to the present invention may include a first chamber for performing a first processing process on the substrate in a first chamber, and a second chamber for performing a second processing process on the substrate in the second chamber , a first gas injection unit that injects gas into the first cavity, a second gas injection unit that injects gas into the second cavity, a gas supply unit that supplies gas, and a gas supply unit that changes the direction of the gas to make the gas supply unit The gas is supplied to the path changing unit of each of the first gas injection unit and the second gas injection unit.

The substrate processing method according to the present invention can be processed on the substrate by using a substrate processing apparatus including a first chamber for performing a first processing process on the substrate and a second chamber for performing a second processing process on the substrate Process.

The substrate processing method according to the present invention may include the steps of changing the direction of the gas so that the gas of the gas supply unit is supplied to the first chamber, the step of performing the first processing process by using the gas supplied to the first chamber , the steps of changing the direction of the gas so that the gas of the gas supply unit is supplied to the second chamber, and the steps of performing the second processing process by using the gas supplied to the second chamber.

The substrate processing method according to the present invention may include the step of changing the direction of the first gas so that the first gas of the first gas supply unit is supplied to the first cavity, by using the first gas in the first cavity Steps of the first treatment process, changing the direction of the first gas so that the first gas of the first gas supply unit is supplied to the second cavity and changing the direction of the second gas so that the second gas of the second gas supply unit is The steps of supplying to the first chamber, and the steps of performing a first processing process by using the second gas in the first chamber and performing a second processing process by using the first gas in the second chamber.

The substrate processing method according to the present invention can be performed by using a first chamber for performing a first processing process on the substrate, a second chamber for performing a second processing process on the substrate, and a first gas supplying the first gas. The substrate processing equipment of the supply unit, the second gas supply unit for supplying the second gas, and the third gas supply unit for supplying the third gas performs a processing process on the substrate. The substrate processing method according to the present invention may include the steps of supplying the first gas to the first cavity by using the first gas supply unit, supplying the first gas to the second cavity by using the first gas supply unit, and by The step of supplying the third gas to the first cavity by using the third gas supply unit, supplying the second gas to the first cavity by using the second gas supply unit, and supplying the third gas by using the third gas supply unit the step of supplying gas to the second chamber, the step of supplying the second gas to the second chamber by using the second gas supply unit and the step of supplying the third gas to the first chamber by using the third gas supply unit, and the step of supplying the third gas to the second cavity by using the third gas supply unit.

Beneficial effect

According to the present invention, the following effects can be achieved.

The present invention is implemented such that the gas supply unit is used in a common manner when performing the first process in the first chamber and when performing the second process in the second chamber. Therefore, the present invention can reduce the construction cost for constructing the gas supply unit and the management cost for managing the gas supply unit. Furthermore, the present invention can reduce the area occupied by the gas supply unit in the installation space, thereby increasing the space utilization rate in the corresponding installation space.

The present invention is implemented to easily and precisely adjust the flow rate at which gas is supplied to each of the first cavity and the second cavity. And, the present invention is implemented such that each of the first gas injection unit and the second gas injection unit injects gas with a sufficient injection pressure. Therefore, the present invention can improve the quality of the substrates for completing the first processing process and the second processing process by using the gas based on sufficient flow rate and injection pressure.

Hereinafter, embodiments of the substrate processing apparatus according to the present invention will be described in detail with reference to the related drawings.

Referring to FIG. 1 , a substrate processing apparatus 1 according to the present invention performs a processing process on a substrate. The substrate may be a glass substrate, a silicon substrate, a metal substrate, or the like. The substrate processing apparatus 1 according to the present invention can perform a deposition process of depositing a thin film on a substrate, an etching process of removing a portion of the thin film deposited on the substrate, and the like. Hereinafter, an embodiment of the substrate processing apparatus 1 according to the present invention for performing a deposition process will be mainly described, and based on such an embodiment, it is obvious to those skilled in the art that the substrate processing apparatus 1 according to the present invention can also be deduced An embodiment of another processing process such as an etching process is performed.

The substrate processing apparatus 1 according to the present invention may include a first chamber 2 , a second chamber 3 , a gas supply unit 4 and a path changing unit 5 .

<First cavity>

Referring to FIG. 1 , the first cavity 2 provides a first processing space 20 . In the first processing space 20, a first processing process such as a deposition process and an etching process can be performed on the substrate. The first processing space 20 may be disposed in the first cavity 2 . An exhaust port (not shown) for exhausting gas from the first processing space 20 may be coupled to the first cavity 2 .

The first gas injection unit 21 may be installed in the first cavity 2 .

The first gas injection unit 21 injects gas into the first cavity 2 . The first gas injection unit 21 may be connected to the gas supply unit 4 . Therefore, the first gas injection unit 21 may inject the gas supplied from the gas supply unit 4 into the first cavity 2 .

The first support unit 22 can be installed in the first cavity 2 .

The first support unit 22 supports the substrate. The first support unit 22 may support one substrate or may support a plurality of substrates. In the case where a plurality of substrates are supported by the first support unit 22, the first processing process may be performed on these substrates at one time. The first support unit 22 can be coupled to the first cavity 2 to be disposed in the first cavity 2 .

The first support unit 22 may be disposed relative to the first gas injection unit 21 . Therefore, the first gas spray unit 21 may spray the gas supplied from the gas supply unit 4 toward the first support unit 22 . The first gas injection unit 21 can be coupled to the first cover body 2a. The first cover 2a may be disposed in the first cavity 2 .

<Second chamber>

Referring to FIG. 1 , the second cavity 3 provides a second processing space 30 . In the second processing space 30, a second processing process such as a deposition process and an etching process can be performed on the substrate. The second processing process and the first processing process can be the same process. The second processing process and the first processing process may be different processes. The second processing space 30 may be disposed in the second cavity 3 . An exhaust port (not shown) for exhausting gas from the second processing space 30 may be coupled to the second cavity 3 .

The second gas injection unit 31 may be installed in the second cavity 3 .

The second gas injection unit 31 injects gas into the second cavity 3 . The second gas injection unit 31 may be connected to the gas supply unit 4 . Therefore, the second gas injection unit 31 may inject the gas supplied from the gas supply unit 4 into the second cavity 3 .

The second support unit 32 may be installed in the second cavity 3 .

The second support unit 32 supports the substrate. The second support unit 32 may support one substrate or may support a plurality of substrates. In the case where a plurality of substrates are supported by the second support unit 32, the second processing process may be performed on the substrates at one time. The second support unit 32 can be coupled to the second cavity 3 to be disposed in the second cavity 3 .

The second support unit 32 may be disposed relative to the second gas injection unit 31 . Therefore, the second gas spray unit 31 may spray the gas supplied from the gas supply unit 4 toward the second support unit 32 . The second gas injection unit 31 may be coupled to the second cover body 3a. The second cover 3 a may be disposed in the second cavity 3 .

<Gas supply unit>

Referring to FIG. 1 , the gas supply unit 4 supplies gas. The gas is used in the first treatment process and the second treatment process. For example, the gas may be a process gas such as a source gas or a reaction gas or a purge gas used to purge the process gas. The gas supplied by the gas supply unit 4 may be supplied to the path changing unit 5 and thus may be supplied to one of the gas spraying units selected from the first gas spraying unit 21 and the second gas spraying unit 31 through the path changing unit 5 . When the gas is supplied to the first gas spraying unit 21 through the path changing unit 5, the first gas spraying unit 21 may spray the gas toward the first supporting unit 22, and thus the first processing process may be performed. When the gas is supplied to the second gas spraying unit 31 through the path changing unit 5, the second gas spraying unit 31 may spray the gas toward the second supporting unit 32, and thus the second processing process may be performed.

As described above, in the substrate processing apparatus 1 according to the present invention, the gas supply unit 4 can be used in a common manner when performing the first processing process in the first chamber 2 and the second processing process in the second chamber 3 use. Therefore, the substrate processing apparatus 1 according to the present invention can reduce the construction cost for constructing the gas supply unit 4 and for managing the gas supply unit, compared to the comparative example in which a plurality of gas supply units are individually included in each cavity 4 management costs. Also, compared with the comparative example, the substrate processing apparatus 1 according to the present invention can reduce the area occupied by the gas supply unit 4 in the installation space, thereby increasing the space utilization rate in the corresponding installation space.

In the case where the gas supply unit 4 supplies two or more gases, the gas supply unit 4 may include a plurality of storage tanks storing a plurality of gases. The gas supply unit 4 may supply a gas selected from the gases stored in the storage tanks in a preset process order. In this case, the gas supply unit 4 may include a plurality of valves for selectively supplying gas.

<Path conversion unit>

Referring to FIG. 1 , the path changing unit 5 changes the direction of the gas supplied by the gas supply unit 4 . Since the path changing unit 5 changes the direction of the gas, the gas of the gas supply unit 4 can be supplied to each of the first gas spraying unit 21 and the second gas spraying unit 31 . In this case, the gas of the gas supply unit 4 may be alternately supplied to the first gas injection unit 21 and the second gas injection unit 31 through the path change unit 5 . For example, the sequence in which the gas of the gas supply unit 4 is alternately supplied to the first gas injection unit 21 and the second gas injection unit 31 may be that after the gas is supplied to the first gas injection unit 21, the gas is supplied to the second gas injection unit 21. Two gas injection units 31 , and then the gas is supplied to the first gas injection unit 21 again. Therefore, the substrate processing apparatus 1 according to the present invention can achieve the following effects.

First, as shown in FIG. 2 , in the comparative example in which the gas supply unit 4 does not pass through the path changing unit 5 to supply gas to the first gas injection unit 21 and the second gas injection unit 31 , the gas of the gas supply unit 4 will be It is supplied to the first gas injection unit 21 and the second gas injection unit 31 in a separate manner. Therefore, it is difficult for the comparative example to precisely adjust each of the flow rate at which the gas is supplied to the first gas injection unit 21 and the flow rate at which the gas is supplied to the second gas injection unit 31 .

On the other hand, in the embodiment, since the gas of the gas supply unit 4 is supplied to each of the first gas injection unit 21 and the second gas injection unit 31 by using the path changing unit 5, it is possible to easily and accurately Each of the flow rate at which the gas is supplied to the first gas injection unit 21 and the flow rate at which the gas is supplied to the second gas injection unit 31 is adjusted.

Second, in the comparative example, the gas of the gas supply unit 4 is supplied to the first cavity 2 through the first gas injection unit 21 and supplied to the second cavity 3 through the second gas injection unit 31 in a separate manner. Therefore, in the comparative example, the flow rate of the gas sprayed by the first gas spraying unit 21 and the flow rate of the gas sprayed by the second gas spraying unit 31 are decreased, so the spraying of the gas sprayed by the first gas spraying unit 21 The pressure and the injection pressure of the gas injected by the second gas injection unit 31 may decrease. Therefore, in the comparative example, the quality of the substrate on which the first treatment process and the second treatment process are completed is degraded due to the gas injected based on the low flow rate and the low injection pressure.

On the other hand, in the embodiment, the embodiment may be implemented such that the gas of the gas supply unit 4 is staggeredly supplied to the gas through the first gas injection unit 21 and the second gas injection unit 31 by using the path changing unit 5 The first cavity 2 and the second cavity 3, so each of the first gas injection unit 21 and the second gas injection unit 31 injects gas with sufficient injection pressure. Therefore, the embodiment can improve the quality of the substrate having the first processing process and the second processing process by using the gas injected based on a sufficient flow rate and a sufficient injection pressure. The path changing unit 5 can be implemented by using a three-way valve.

<Controller>

Referring to FIG. 1 and FIGS. 3 to 4 , the substrate processing apparatus 1 according to the present invention may include a controller 6 .

The controller 6 controls the path changing unit 5 . The controller 6 can control the path changing unit 5 and thus can change the direction of the gas supplied by the gas supplying unit 4 . The controller 6 can control the path changing unit 5 according to the process information set in advance based on the process conditions of each of the first processing process and the second processing process. The process information can be preset by the staff as the flow rate of the gas to be supplied to the first gas injection unit for the first treatment process, the flow rate of the gas to be supplied to the second gas injection unit for the second treatment process, and the time for which the gas is supplied to each of the first gas injection unit and the second gas injection unit.

Here, the substrate processing apparatus 1 according to the present invention may be implemented to supply a mixed gas obtained by mixing the first gas and the second gas to each of the first cavity 2 and the second cavity 3 . In this case, the gas supply unit 4 may supply the mixed gas. The path changing unit 5 may change the direction of the mixed gas so that the mixed gas is supplied to each of the first cavity 2 and the second cavity 3 . The first gas can be a source gas, and the second gas can be a reactive gas. In this case, a chemical vapor deposition (CVD) based process may be performed in each of the first cavity 2 and the second cavity 3 . The substrate processing apparatus 1 according to the present invention can supply the mixed gas to each of the first cavity 2 and the second cavity 3 and then can supply the purge gas to the first cavity 2 and the second cavity 3 of each. Therefore, after the mixed gas is sprayed into each of the first cavity 2 and the second cavity 3, the process of spraying and blowing out the gas can be repeated.

Referring to FIG. 3 , the substrate processing apparatus 1 according to the present invention may be implemented such that the first gas and the second gas are supplied to the first cavity 2 and the second cavity in a state where the first gas is not mixed with the second gas each of the 3 bodies. In this case, the gas supply unit 4 and the path change unit 5 may be implemented in the following manner.

The gas supply unit 4 may include a first gas supply unit 4a and a second gas supply unit 4b. The first gas supply unit 4a may supply the first gas. The second gas supply unit 4b may supply the second gas. The first gas can be a source gas, and the second gas can be a reactive gas.

Path transform unit 5 may include a first transform unit 5a and a second transform unit 5b.

The first changing unit 5a may change the direction of the first gas so that the first gas of the first gas supply unit 4a is supplied to each of the first cavity 2 and the second cavity 3 . The first conversion unit 5a may be connected to each of the first gas supply unit 4a, the first cavity 2 and the second cavity 3. The first conversion unit 5a can be implemented by using a three-way valve. The first transformation unit 5a is implemented to approximately match the path transformation unit 5, so it will not be described again.

The second changing unit 5b may change the direction of the second gas so that the second gas of the second gas supply unit 4b is supplied to each of the first cavity 2 and the second cavity 3 . The second conversion unit 5b may be connected to each of the second gas supply unit 4b, the first cavity 2 and the second cavity 3. The second transform unit 5b and the first transform unit 5a may be independently connected to each of the first cavity 2 and the second cavity 3 . The second conversion unit 5b can be implemented by using a three-way valve. The second transformation unit 5b can be implemented to approximately match the path transformation unit 5, so it will not be described again.

In the case where a chemical vapor deposition (CVD) process-based processing process is performed in each of the first cavity 2 and the second cavity 3 , in each of the first cavity 2 and the second cavity 3 In the process, the first transformation unit 5 a and the second transformation unit 5 b can change the direction of the first gas and the direction of the second gas so that the first gas and the second gas are supplied to the first cavity 2 . Therefore, a first treatment process based on a chemical vapor deposition (CVD) process can be performed in the first chamber 2 by using the first gas and the second gas. In addition, the first conversion unit 5 a and the second conversion unit 5 b can change the direction of the first gas and the direction of the second gas so that the first gas and the second gas are supplied to the second cavity 3 . Therefore, a second treatment process based on a chemical vapor deposition (CVD) process can be performed in the second chamber 3 by using the first gas and the second gas.

The gas supply unit 4 may include a third gas supply unit 4c. The third gas supply unit 4c supplies purge gas.

When the first treatment process performed in the first chamber 2 and the second treatment process performed in the second chamber 3 are completed, the third gas supply unit 4c may supply the purge gas to the first chamber 2 and Each of the second cavities 3 . The third gas supply unit 4c may also supply purge gas to each of the first cavity 2 and the second cavity 3 through at least one of the first conversion unit 5a and the second conversion unit 5b.

In the case where the third gas supply unit 4c supplies the blowing gas to each of the first cavity 2 and the second cavity 3 through the first changing unit 5a, the first changing unit 5a can change the direction of the blowing gas Thereby, the purge gas is supplied to each of the first cavity 2 and the second cavity 3 . In this case, the first changing unit 5a is implemented to change the direction of the first gas and the direction of the blowing gas.

In the case where the third gas supply unit 4c supplies the blowing gas to each of the first cavity 2 and the second cavity 3 through the second changing unit 5b, the second changing unit 5b can change the direction of the blowing gas Thereby, the purge gas is supplied to each of the first cavity 2 and the second cavity 3 . In this case, the second changing unit 5b is implemented to change the direction of the second gas and the direction of the blowing gas.

In the case where the third gas supply unit 4c supplies the purge gas to each of the first cavity 2 and the second cavity 3 through the first transformation unit 5a and the second transformation unit 5b, the first transformation unit 5a and The second changing unit 5b may change the direction of the blowing gas so that the blowing gas is supplied to each of the first cavity 2 and the second cavity 3 .

The path transformation unit 5 may comprise a third transformation unit 5c.

The third changing unit 5c can change the direction of the blowing gas so that the blowing gas of the third gas supply unit 4c is supplied to each of the first cavity 2 and the second cavity 3 . When the first treatment process performed in the first cavity 2 is completed, the third conversion unit 5 c can change the direction of the purge gas so that the purge gas is supplied to the first cavity 2 . When the purge gas is supplied to the first chamber 2 , the second treatment process can be performed in the second chamber 3 . When the second treatment process performed in the second chamber 3 is completed, the third conversion unit 5 c can change the direction of the blowing gas so that the blowing gas is supplied to the second chamber 3 . When the purge gas is supplied to the second cavity 3 , the first processing process can be performed in the first cavity 2 . The third conversion unit 5c can be implemented by using a three-way valve. The third transformation unit 5c is implemented to approximately match the path transformation unit 5, so it will not be described again.

In the case where the processing process based on the atomic layer deposition (ALD) process is performed in each of the first cavity 2 and the second cavity 3, when the first conversion unit 5a changes the direction of the first gas to When supplying the first gas to the first cavity 2 , the second changing unit 5 b may change the direction of the second gas to supply the second gas to the second cavity 3 . And, when the first transformation unit 5a changes the direction of the first gas to supply the first gas to the second cavity 3, the second transformation unit 5b may change the direction of the second gas to supply the second gas to the first cavity body 2.

An atomic layer deposition (ALD) process based processing process is performed in each of the first cavity 2 and the second cavity 3 and a purge gas is supplied to each of the first cavity 2 and the second cavity 3 In the latter case, the first transform unit 5a, the second transform unit 5b and the third transform unit 5c may operate in the following manner.

First, when the first transformation unit 5a changes the direction of the first gas to supply the first gas to the first cavity 2, the second transformation unit 5b can change the direction of the second gas to supply the second gas to the second cavity body 3.

Subsequently, at least one of the first transforming unit 5a, the second transforming unit 5b and the third transforming unit 5c may change the direction of the blowing gas to supply the blowing gas to each of the first cavity 2 and the second cavity 3 one.

Subsequently, when the first changing unit 5a changes the direction of the first gas to supply the first gas to the second cavity 3, the second changing unit 5b may change the direction of the second gas to supply the second gas to the first cavity body 2.

Subsequently, at least one of the first transforming unit 5a, the second transforming unit 5b and the third transforming unit 5c may change the direction of the blowing gas to supply the blowing gas to each of the first cavity 2 and the second cavity 3 one.

Therefore, the first processing process based on the atomic layer deposition (ALD) process can be performed in the first chamber 2 , and the second processing process based on the atomic layer deposition (ALD) process can be performed in the second chamber 3 .

Hereinafter, embodiments of the substrate processing method according to the present invention will be described in detail with reference to the related drawings.

Please refer to FIG. 1 and FIGS. 3 to 4 . According to the substrate processing method of the present invention, a substrate processing apparatus 1 is used to perform a processing process on a substrate. The substrate processing apparatus 1 includes a first chamber for performing a first processing process on the substrate. The body 2 and the second cavity 3 for the second processing process to be performed on the substrate. The substrate processing method according to the present invention can be performed by the above-described substrate processing apparatus 1 according to the present invention. The substrate processing method according to the present invention may include the following steps.

First, the direction of the gas is changed so that the gas is supplied to the first cavity 2 (step S10). In such step S10 , the path changing unit 5 can change the direction of the gas so that the gas of the gas supply unit 4 is supplied to the first cavity 2 , and thus the gas can be supplied to the first cavity 2 . The path changing unit 5 can change the direction of the gas according to the control by the controller 6 .

Subsequently, a first treatment process is performed in the first chamber 2 (step S20 ). In step S20 , the first gas spraying unit 21 may spray the gas supplied from the gas supplying unit 4 and the path changing unit 5 toward the substrate supported by the first supporting unit 22 .

Subsequently, the direction of the gas is changed so that the gas is supplied to the second cavity 3 (step S30). In such step S30 , the path changing unit 5 may change the direction of the gas so that the gas of the gas supply unit 4 is supplied to the second cavity 3 . The path changing unit 5 can change the direction of the gas according to the control by the controller 6 so that the gas can be supplied to the second cavity 3 .

Subsequently, a second processing process is performed in the second cavity 3 (step S40 ). In such step S40 , the second gas spraying unit 31 may spray the gas supplied from the gas supplying unit 4 and the path changing unit 5 toward the substrate supported by the second supporting unit 32 .

By performing the above steps, the substrate processing method according to the present invention can be implemented such that the first processing process is performed in the first chamber 2 and the second processing process is performed in the second chamber 3 .

Here, the step S10 of changing the direction of the gas so that the gas is supplied to the first cavity and the step S30 of changing the direction of the gas so that the gas is supplied to the second cavity may be alternately performed. Therefore, the process of supplying the gas of the gas supply unit 4 to the first cavity 2 and the process of supplying the gas of the gas supply unit 4 to the second cavity 3 can be alternately performed. Therefore, the substrate processing method according to the present invention can easily and precisely adjust each of the flow rate at which the gas is supplied to the first cavity 2 and the flow rate at which the gas is supplied to the second cavity 3 . Also, the substrate processing method according to the present invention can be implemented to inject gas into each of the first cavity 2 and the second cavity 3 with a sufficient injection pressure, and thus can be based on a sufficient flow rate and sufficient injection by using The gas sprayed under pressure improves the quality of the substrates after the first treatment process and the second treatment process are completed.

Here, the step S10 of changing the direction of the gas so that the gas is supplied to the first cavity can be performed by supplying the gas to the first cavity 2 while preventing the gas from being supplied to the second cavity 3 . Therefore, the substrate processing method according to the present invention can increase the flow rate and the injection pressure of the gas injected by the first gas injection unit 21 relative to the gas supply amount of the gas supply unit 4 , thereby further improving the quality of the substrate after completing the first processing process. . The step S10 of changing the direction of the gas so that the gas is supplied to the first cavity can be performed by supplying all the gas to the first cavity 2 .

Here, the step S30 of changing the direction of the gas so that the gas is supplied to the second cavity can be performed by supplying the gas to the second cavity 3 while preventing the gas from being supplied to the first cavity 2 . Therefore, the substrate processing method according to the present invention can increase the flow rate and the injection pressure of the gas injected by the second gas injection unit 31 relative to the gas supply amount of the gas supply unit 4 , thereby further improving the substrate for the second processing process. of quality. The step S30 of changing the direction of the gas so that the gas is supplied to the second cavity may be performed by supplying all the gas to the second cavity 3 .

Here, the substrate processing method according to the present invention may be implemented to supply the mixed gas in which the first gas and the second gas are mixed to each of the first cavity 2 and the second cavity 3 . In this case, the step S10 of changing the direction of the gas so that the gas is supplied to the first cavity can be performed by changing the direction of the mixed gas so that the mixed gas is supplied to the first cavity 2 . Therefore, by using the mixed gas injected into the first cavity 2, the step S20 of performing the first treatment process in the first cavity can be performed by performing the first treatment process according to the chemical vapor deposition process. The step S30 of changing the direction of the gas so that the gas is supplied to the second cavity can be performed by changing the direction of the mixed gas so that the mixed gas is supplied to the second cavity 3 . Therefore, by using the mixed gas injected into the second cavity 3, the step S20 of performing the second treatment process in the second cavity can be performed by performing the second treatment process according to the chemical vapor deposition process.

Referring to FIGS. 1 and 3 to 5 , the substrate processing method according to the present invention may be implemented such that the first gas and the second gas are supplied to the first cavity in a state in which the first gas and the second gas are not mixed Each of the 2 and the second cavity 3 can thus be implemented for processing according to a chemical vapor deposition (CVD) process. In this case, the substrate processing method according to the present invention can be implemented in the following manner.

First, by changing the direction of the first gas and the direction of the second gas so that the first gas and the second gas are supplied to the first cavity 2, the direction of the gas can be changed so that the gas is supplied to the first cavity body step S10. This can be achieved by changing the direction of the first gas so that the first gas is supplied to the first transformation unit 5a of the first cavity 2 and changing the direction of the second gas so that the second gas is supplied to the first cavity 2 The second transform unit 5b performs this. Therefore, by using the first gas and the second gas in the first cavity 2, the first treatment in the first cavity can be carried out by carrying out the first treatment process according to the chemical vapor deposition (CVD) process Step S20 of the process.

Then, by changing the direction of the first gas and the direction of the second gas so that the first gas and the second gas are supplied to the second cavity 3, the gas is supplied to the second cavity by changing the direction of the gas body step S30. This can be done by changing the direction of the first gas so that the first gas is supplied to the first changing unit 5a of the second cavity 3 and changing the direction of the second gas so that the second gas is supplied to the second cavity 3 The second transform unit 5b performs this. Therefore, by using the first gas and the second gas in the second cavity 3, the second treatment in the second cavity can be carried out by carrying out the second treatment process according to the chemical vapor deposition (CVD) process Step S40 of the process.

Here, the substrate processing method according to the present invention may include the step S50 of supplying the purge gas to the first cavity and the step S60 of supplying the purge gas to the second cavity.

The step S50 of supplying the purge gas to the first cavity may be performed after the first treatment process is performed in the first cavity. The step of supplying the purge gas to the first cavity can be performed by changing the direction of the purge gas so that the purge gas of the third gas supply unit 4c is supplied to the third change unit 5c of the first cavity 2 S50. It is also possible to supply the purge gas to the first cavity at the same time as the step S30 of changing the direction of the gas so that the gas is supplied to the second cavity and the step S40 of carrying out the second treatment process in the second cavity. step S50.

The step S60 of supplying the purge gas to the second cavity may be performed after the second treatment process is performed in the second cavity. The step of supplying the purge gas to the second cavity can be performed by changing the direction of the purge gas so that the purge gas of the third gas supply unit 4c is supplied to the third change unit 5c of the second cavity 3 S60. It is also possible to supply the purge gas to the second cavity at the same time as the step S10 of changing the direction of the gas so that the gas is supplied to the first cavity and the step S20 of carrying out the first treatment process in the first cavity step S60.

Referring to FIGS. 1 to 6 , the substrate processing method according to the present invention may be implemented such that the first gas and the second gas are supplied to the first cavity 2 and the second gas in a state in which the first gas is not mixed with the second gas. Each of the two chambers 3 can thus be implemented for processing based on an atomic layer deposition (ALD) process. For example, the substrate processing method according to the present invention may be implemented to alternately supply the first gas to the first chamber 2 and the second chamber 3 and alternately supply the second gas to the first chamber 2 and the second chamber Two chambers 3. The substrate processing method according to the present invention can be implemented in the following manner.

First, the step S10 of changing the direction of the gas so that the gas is supplied to the first cavity may include the step S11 of changing the first gas so that the first gas is supplied to the first cavity.

The step of changing the direction of the first gas so that the first gas is supplied to the first cavity can be performed by changing the direction of the first gas so that the first gas is supplied to the first conversion unit 5a of the first cavity 2 S11. Therefore, the first treatment process using the first gas can be performed in the first chamber 2 (step S21 ). When the first gas is the source gas, an adsorption process of adsorbing the source gas onto the substrate during the first process can be performed in the first chamber 2 .

Subsequently, the step S30 of changing the direction of the gas so that the gas is supplied to the second cavity may include the step S31 of changing the direction of the first gas so that the first gas is supplied to the second cavity and changing the direction of the second gas to Step S32 of causing the second gas to be supplied to the first cavity.

By changing the direction of the first gas so that the first gas is supplied to the first conversion unit 5a of the second cavity 3, the direction of the first gas can be changed so that the first gas is supplied to the second cavity. Step S31. Therefore, the second treatment process using the first gas can be performed in the second chamber 3 (step S41 ). When the first gas is the source gas, an adsorption process of adsorbing the source gas onto the substrate during the second processing process can be performed in the second chamber 3 .

The direction of the second gas can be changed so that the second gas is supplied to the first cavity by changing the direction of the second gas so that the second gas is supplied to the second conversion unit 5b of the first cavity 2. Step S32. Therefore, the first treatment process using the second gas can be performed in the first chamber 2 (step S42 ). When the second gas is a reactive gas, a deposition process of reacting the source gas adsorbed on the substrate during the first processing process with the reactive gas to deposit a thin film on the substrate can be performed in the first chamber 2 .

The step S32 of changing the direction of the second gas so that the second gas is supplied to the first cavity and the step S31 of changing the direction of the first gas so that the first gas is supplied to the second cavity can be performed simultaneously. Here, the case where each start time and end time are different within a specific range and the case where each start time and end time are exactly the same are included at the same time.

Here, the step S10 of changing the direction of the gas so that the gas is supplied to the first cavity may include the step S12 of changing the direction of the second gas so that the second gas is supplied to the second cavity.

By changing the direction of the second gas so that the second gas is supplied to the second conversion unit 5b of the second cavity 3, the direction of the second gas can be changed so that the second gas is supplied to the second cavity. Step S12. Therefore, the second treatment process using the second gas can be performed in the second chamber 3 (step S22 ). When the second gas is a reactive gas, a deposition process of reacting the source gas adsorbed on the substrate and the reactive gas during the second processing process to deposit a thin film on the substrate can be performed in the second chamber 3 .

The step S12 of changing the direction of the second gas so that the second gas is supplied to the second cavity and the step S11 of changing the direction of the first gas so that the first gas is supplied to the first cavity can be performed simultaneously. Here, the case where each start time and end time are different within a specific range and the case where each start time and end time are exactly the same are included at the same time.

Furthermore, in the initial step of the process of loading the substrate into each of the first cavity 2 and the second cavity 3, only changing the direction of the first gas so that the first gas is supplied to the first cavity may be performed and step S12 of supplying the second gas to the second cavity without changing the direction of the second gas. This is to perform the processing process on the substrate with the second gas after first performing the processing process on the substrate with the first gas.

Here, the step S50 of supplying the purge gas to the first cavity and the step S60 of supplying the purge gas to the second cavity can be implemented in the following manner.

Supplying the purge gas to the second chamber may be performed after the step S21 of performing the first treatment process with the first gas in the first chamber and the step S22 of performing the second treatment process with the second gas in the second chamber. Step S50 of a cavity. The step S50 of supplying the purge gas to the first cavity may include the step S51 of changing the direction of the purge gas so that the purge gas is supplied to the first cavity and changing the direction of the purge gas so that the purge gas is supplied to step S52 of the second cavity.

By changing the direction of the blowing gas so that the blowing gas of the third gas supply unit 4c is supplied to the third changing unit 5c of the first cavity 2, the direction of the blowing gas can be changed and the blowing gas can be changed. Step S51 of supplying to the first cavity.

By changing the direction of the blowing gas so that the blowing gas of the third gas supply unit 4c is supplied to the third changing unit 5c of the second cavity 3, the direction of the blowing gas can be changed and the blowing gas can be changed. Step S52 of supplying to the second cavity.

The step S52 of changing the direction of the blowing gas so that the blowing gas is supplied to the second cavity may be performed after the step S51 of changing the direction of the blowing gas so that the blowing gas is supplied to the first cavity. Therefore, the step S50 of supplying the purging gas to the first cavity can be performed by changing the purging gas so that the purging gas is alternately supplied to the first cavity 2 and the second cavity 3 . In addition, after the step S52 of changing the direction of the purge gas to supply the purge gas to the second gas, the step S51 of changing the purge gas to supply the purge gas to the first cavity may be performed. The step S52 of changing the purge gas so that the purge gas is supplied to the second cavity and the step S51 of changing the direction of the purge gas so that the purge gas is supplied to the first cavity may be performed simultaneously.

The purge may be performed after the step S31 of changing the first gas so that the first gas is supplied to the second cavity and the step S32 of changing the direction of the second gas so that the second gas is supplied to the first cavity Step S60 of supplying gas to the second cavity. The step S60 of supplying the purge gas to the second cavity may include the step S61 of changing the direction of the purge gas so that the purge gas is supplied to the first cavity and changing the direction of the purge gas so that the purge gas is supplied to step S62 of the second cavity.

The purge gas of the third gas supply unit 4c can be supplied to the third conversion unit 5c of the first cavity 2 by changing the direction of the purge gas, and the purge gas can be supplied by changing the direction of the purge gas to step S61 of the first cavity.

By changing the direction of the blowing gas, the blowing gas of the third gas supply unit 4c can be supplied to the third changing unit 5c of the second cavity 3, and the blowing gas can be changed so that the blowing gas is supplied to the third changing unit 5c of the second cavity 3. Two-chamber step S62.

The step S62 of changing the direction of the blowing gas so that the blowing gas is supplied to the second cavity may be performed after the step S61 of changing the direction of the blowing gas so that the blowing gas is supplied to the first cavity. Therefore, the blowing gas can be alternately supplied to the first cavity 2 and the second cavity 3 by changing the direction of the blowing gas, and the step S60 of supplying the blowing gas to the second cavity can be performed. In addition, after the step S62 of changing the direction of the blowing gas to supply the blowing gas to the second cavity, the step S61 of changing the direction of the blowing gas to supply the blowing gas to the first cavity may be performed . The step S62 of changing the direction of the purge gas so that the purge gas is supplied to the second cavity and the step S61 of changing the direction of the purge gas so that the purge gas is supplied to the first cavity can be performed simultaneously.

Referring to FIG. 1 , FIG. 3 and FIG. 8 , a substrate processing method according to a modified embodiment of the present invention performs a processing process on a substrate. The substrate processing method according to the modified embodiment of the present invention can be performed by using the above-described substrate processing apparatus 1 according to the present invention. The substrate processing method according to the modified embodiment of the present invention may include the following steps.

First, the first gas is supplied to the first cavity 2 (step S100). Such step S100 may be performed by supplying the first gas of the first gas supply unit 4a to the first cavity 2 . In this case, the first changing unit 5 a may change the direction of the first gas so that the first gas of the first gas supply unit 4 a is supplied to the first cavity 2 . The first gas may be the source gas. Therefore, the adsorption process using the source gas can be performed in the first chamber 2 .

Subsequently, the first gas is supplied to the second cavity 3, and the third gas is supplied to the first cavity 2 (step S200). Such step S200 may be performed by supplying the first gas to the first gas supply unit 4a of the second cavity 3 and supplying the third gas to the third gas supply unit 4c of the first cavity 2 . In this case, the first changing unit 5 a may change the direction of the first gas so that the first gas of the first gas supply unit 4 a is supplied to the second cavity 3 . The third changing unit 5 c can change the direction of the third gas so that the third gas of the third gas supply unit 4 c is supplied to the first cavity 2 . The third gas may be purge gas. Therefore, the adsorption process using the source gas can be performed in the second chamber 3 , and the blow-off process of blowing the first gas can be performed in the first chamber 2 .

Subsequently, the second gas is supplied to the first cavity 2, and the third gas is supplied to the second cavity 3 (step S300). Such step S300 may be performed by supplying the second gas to the second gas supply unit 4b of the first cavity 2 and supplying the third gas to the third gas supply unit 4c of the second cavity 3 . In this case, the second changing unit 5b may change the direction of the second gas so that the second gas of the second gas supply unit 4b is supplied to the first cavity 2 . The third conversion unit 5c can change the direction of the third gas so that the third gas of the third gas supply unit 4c is supplied to the second cavity 3 . The second gas may be a reactive gas. Therefore, the deposition process using the reactive gas can be performed in the first chamber 2 , and the blow-off process of blowing out the first gas can be performed in the second chamber 3 .

Subsequently, the second gas is supplied to the second cavity 3, and the third gas is supplied to the first cavity 2 (step S400). Such step S400 may be performed by supplying the second gas to the second gas supply unit 4b of the second cavity 3 and supplying the third gas to the third gas supply unit 4c of the first cavity 2 . In this case, the second changing unit 5b can change the direction of the second gas so that the second gas of the second gas supply unit 4b is supplied to the second cavity 3 . The third changing unit 5 c can change the direction of the third gas so that the third gas of the third gas supply unit 4 c is supplied to the first cavity 2 . Therefore, the deposition process using the reactive gas can be performed in the second chamber 3 , and the blow-off process of blowing the second gas can be performed in the first chamber 2 .

Subsequently, the third gas is supplied to the second cavity 3 (step S500). Such step S500 may be performed by supplying the third gas to the third gas supply unit 4c of the second cavity 3 . In this case, the third changing unit 5 c can change the direction of the third gas so that the third gas of the third gas supply unit 4 c is supplied to the second cavity 3 . Therefore, the blowing process of blowing the second gas can be performed in the second cavity 3 .

Furthermore, in an initial step corresponding to the process immediately after the substrate is loaded in each of the first cavity 2 and the second cavity 3, only the supply of the first gas to the first cavity may be performed In step S100 , the gas may not be supplied to the second cavity 3 . And, in the last step corresponding to the process immediately before the substrate is unloaded from each of the first cavity 2 and the second cavity 3, only the step S500 of supplying the third gas to the second cavity may be performed , and the gas may not be supplied to the first cavity 2 . Also, in an intermediate step of the process between the last step of the process and the initial step of the process, the supply of the first gas to the first chamber may be performed at the same time as the step S500 of supplying the third gas to the second chamber is performed body step S100. In this case, the sequential spraying of the first gas, the third gas, the second gas and the third gas onto the substrate disposed in each of the first cavity 2 and the second cavity 3 may be repeated cycle.

The present invention is not limited to the above-mentioned embodiments and drawings, and those skilled in the art will clearly appreciate that various modifications, variations and substitutions can be made without departing from the scope and spirit of the present invention.

1: Substrate processing equipment 2a: The first cover 2: The first cavity 20: The first processing space 21: The first gas injection unit 22: The first support unit 3: The second cavity 3a: Second cover 30: Second processing space 31: Second gas injection unit 32: Second support unit 4: Gas supply unit 4a: First gas supply unit 4b: Second gas supply unit 4c: Third gas supply unit 5: Path Transformation Unit 5a: first transform unit 5b: Second Transform Unit 5c: Third Transform Unit 6: Controller S10,S11,S12,S20,S21,S22,S30,S31,S32,S40,S41,S42,S50,S51,S52,S60,S61,S62,S100,S200,S300,S400,S500: Steps

FIG. 1 is a schematic structural diagram of a substrate processing apparatus according to the present invention. FIG. 2 is a block diagram illustrating a comparative example of the substrate processing apparatus according to the present invention. 3 is a schematic block diagram of a substrate processing apparatus according to the present invention. 4 to 7 are schematic flow charts of the substrate processing method according to the present invention. 8 is a schematic flowchart of a substrate processing method according to a modified embodiment of the present invention.

S10, S20, S30, S40: Steps

Claims (15)

A substrate processing equipment includes: a first cavity in which a first processing process is performed on a substrate; a second cavity in which a second processing process is performed on a substrate a first gas injection unit for injecting a gas into the first cavity; a second gas injection unit for injecting the gas into the second cavity; a gas supply unit for supplying the gas; and a path changing unit that changes the direction of the gas so that the gas of the gas supply unit is supplied to each of the first gas injection unit and the second gas injection unit. The substrate processing apparatus of claim 1, wherein the path changing unit changes the direction of the gas to supply the gas to the first gas injection unit, and changes the direction of the gas to supply the gas to the second gas injection unit. The substrate processing apparatus of claim 1, wherein the gas supply unit includes a first gas supply unit that supplies a first gas and a second gas supply unit that supplies a second gas, and the path changing unit includes a A first transformation unit and a second transformation unit, the first transformation unit changes the direction of the first gas so that the first gas of the first gas supply unit is supplied to the first gas injection unit and the second gas Each of the injection units, the second conversion unit changes the direction of the second gas so that the second gas of the second gas supply unit is supplied to each of the first gas injection unit and the second gas injection unit one. The substrate processing apparatus of claim 3, wherein the gas supply unit further includes a third gas supply unit that supplies a purge gas, and the path change unit further includes a third change unit, the third change unit changing The direction of the purge gas is such that the purge gas of the third gas supply unit is supplied to each of the first gas injection unit and the second gas injection unit. The substrate processing apparatus of claim 3, wherein the gas supply unit further comprises a third gas supply unit for supplying a purge gas, and the first conversion unit changes the direction of the first gas and the direction of the purge gas , and the second conversion unit changes the direction of the second gas and the direction of the purge gas. A substrate processing method by using a substrate processing apparatus including a first chamber for performing a first processing process on a substrate and a second chamber for performing a second processing process on the substrate in A processing process is performed on the substrate, the method comprising: changing the direction of a gas so that the gas of a gas supply unit is supplied to the first cavity; by using the gas supplied to the first cavity the steps of carrying out the first treatment process with gas; changing the direction of the gas so that the gas of the gas supply unit is supplied to the second cavity; and by using the gas supplied to the second cavity The steps of the second processing procedure are performed. The method of claim 6, wherein the steps of changing the direction of the gas such that the gas of the gas supply unit is supplied to the first cavity and changing the direction of the gas such that the gas of the gas supply unit is The steps of supplying to the second chamber alternate. The method of claim 6, wherein the step of changing the direction of the gas such that the gas of the gas supply unit is supplied to the first cavity supplies the gas to the first cavity while preventing the gas from being supplied to the first cavity supplied to the second cavity. The method of claim 6, wherein the step of changing the direction of the gas such that the gas of the gas supply unit is supplied to the first cavity changes a direction of a first gas and a direction of a second gas, and The step of causing the first gas and the second gas to be supplied to the first cavity, and changing the direction of the gas so that the gas of the gas supply unit is supplied to the second cavity changes the first gas direction and the direction of the second gas so that the first gas and the second gas are supplied to the second cavity. The method of claim 6, further comprising: after performing the step of the first treatment process, supplying a purge gas to the first cavity; and after performing the step of the second treatment process, the A purge gas is supplied to the second cavity. A substrate processing method by using a substrate processing apparatus including a first chamber for performing a first processing process on a substrate and a second chamber for performing a second processing process on the substrate in A processing process is performed on the substrate, the method comprising: changing the direction of a first gas so that the first gas of a first gas supply unit is supplied to the first cavity; being supplied to the first cavity by using The first gas of the first cavity performs the steps of the first treatment process; changing the direction of the first gas so that the first gas of the first gas supply unit is supplied to the second cavity and changing a first gas The steps of supplying the second gas of a second gas supply unit to the first cavity in the direction of two gases; and performing the first processing process by using the second gas in the first cavity and The steps of the second processing process are performed by using the first gas in the second chamber. The method of claim 11, further comprising the steps of changing the direction of the second gas so that the second gas of the second gas supply unit is supplied to the second cavity, and by using the second cavity The step of performing the second treatment process with the second gas in the body, wherein the step of changing the direction of the first gas so that the first gas of the first gas supply unit is supplied to the first cavity At the same time, the step of changing the direction of the second gas so that the second gas of the second gas supply unit is supplied to the first cavity is carried out, and wherein is carried out by using the gas in the first cavity The first gas performs the steps of the first process at the same time as the steps of the second process by using the second gas in the second chamber are performed. The method of claim 12, further comprising: performing the first process by using the first gas in the first chamber and by using the second gas in the second chamber After performing the steps of the second treatment process, supplying a purge gas to the first cavity and the second cavity; and performing the first treatment by using the second gas in the first cavity After the steps of the process and the steps of the second processing process by using the first gas in the second chamber, the purge gas is supplied to the first chamber and the second chamber. A substrate processing method by using a first chamber including a first treatment process on a substrate, a second chamber for a second treatment process on the substrate, supplying a first gas A substrate processing apparatus of a first gas supply unit, a second gas supply unit supplying a second gas, and a third gas supply unit supplying a third gas performs a processing process on the substrate, and the method includes : the step of supplying the first gas to the first cavity by using the first gas supply unit; supplying the first gas to the second cavity by using the first gas supply unit and by using the step of supplying the third gas to the first cavity by the third gas supply unit; supplying the second gas to the first cavity by using the second gas supply unit and by using the third gas the step of supplying the third gas to the second cavity by a supply unit; supplying the second gas to the second cavity by using the second gas supply unit and supplying the second cavity by using the third gas supply unit The step of supplying a third gas to the first cavity; and the step of supplying the third gas to the second cavity by using the third gas supply unit. The method of claim 14, wherein the step of supplying the first gas to the first cavity by using the first gas supply unit is performed concurrently with the step of supplying the first gas by using the third gas supply unit Steps of supplying three gases to the second cavity.

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