TW202214831A - Method for cleaning substrate - Google Patents

Method for cleaning substrate Download PDF

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Publication number
TW202214831A
TW202214831A TW110132940A TW110132940A TW202214831A TW 202214831 A TW202214831 A TW 202214831A TW 110132940 A TW110132940 A TW 110132940A TW 110132940 A TW110132940 A TW 110132940A TW 202214831 A TW202214831 A TW 202214831A
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component
resin mask
mass
cleaning
substrate
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TW110132940A
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Chinese (zh)
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山田晃平
鄭敬騰
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日商花王股份有限公司
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/30Imagewise removal using liquid means
    • G03F7/32Liquid compositions therefor, e.g. developers
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • C11D7/26Organic compounds containing oxygen
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • C11D7/26Organic compounds containing oxygen
    • C11D7/265Carboxylic acids or salts thereof
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • C11D7/32Organic compounds containing nitrogen
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • C11D7/32Organic compounds containing nitrogen
    • C11D7/3209Amines or imines with one to four nitrogen atoms; Quaternized amines
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/30Imagewise removal using liquid means
    • G03F7/32Liquid compositions therefor, e.g. developers
    • G03F7/325Non-aqueous compositions
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor

Abstract

One embodiment of the present disclosure provides a method for cleaning a substrate, said method being capable of inhibiting copper corrosion without greatly deteriorating removability (separability) of a resin mask and without greatly increasing residues on the substrate after the cleaning. One embodiment of the present disclosure relates to a method for cleaning a substrate, said method comprising a step wherein a resin mask is separated from a substrate, which has a copper-containing metal layer and the resin mask on the surface, with use of a cleaning agent composition that contains the component A, the component B and the component C described below. Component A: a quaternary ammonium hydroxide represented by formula (I) and an amine represented by formula (II) Component B: a reducing agent Component C: water.

Description

基板之洗淨方法Cleaning method of substrate

本發明係關於一種樹脂遮罩剝離用洗淨劑組合物、使用其之基板之洗淨方法及電子零件之製造方法。The present invention relates to a cleaning composition for resin mask peeling, a method for cleaning a substrate using the same, and a method for producing electronic parts.

近年來,於個人電腦或各種電子裝置中,低耗電化、處理速度之高速化、小型化正在發展,該等中搭載之封裝基板等之配線正在逐年微細化。此種微細配線、及柱或凸塊等連接端子之形成迄今為止主要使用金屬遮罩法,但因通用性較低、或難以應對配線等之微細化,故正在向其他新穎之方法轉變。In recent years, in personal computers and various electronic devices, lower power consumption, higher processing speed, and miniaturization are progressing, and wiring such as package substrates mounted in these devices is being miniaturized year by year. The metal mask method has been mainly used for the formation of such fine wiring and connection terminals such as posts and bumps. However, since the versatility is low, or it is difficult to cope with the miniaturization of wiring and the like, it is changing to other novel methods.

作為新方法之一,已知有使用乾膜抗蝕劑作為厚膜樹脂遮罩來代替金屬遮罩之方法。該樹脂遮罩最終會被剝離、去除,關於剝離、去除等之洗淨所使用之洗淨劑,已知有含有鹼劑與水之樹脂遮罩剝離用洗淨劑。例如,於日本專利特開2019-112498號公報(專利文獻1)中,為了提供樹脂遮罩去除性及連續操作穩定性優異之樹脂遮罩剝離洗淨方法,揭示有如下樹脂遮罩剝離洗淨方法,其使用含有特定之四級銨氫氧化物、特定之胺、及水之洗淨劑組合物。As one of the new methods, a method of using a dry film resist as a thick film resin mask instead of a metal mask is known. The resin mask is eventually peeled off and removed, and as a cleaning agent used for cleaning such as peeling and removal, a resin mask peeling cleaning agent containing an alkali agent and water is known. For example, in Japanese Patent Laid-Open No. 2019-112498 (Patent Document 1), in order to provide a resin mask peeling and cleaning method excellent in resin mask removability and continuous operation stability, the following resin mask peeling and cleaning is disclosed A method using a detergent composition containing a specified quaternary ammonium hydroxide, a specified amine, and water.

又,亦正在開發抑制洗淨後對金屬膜質之腐蝕之技術。例如,於日本專利特開2007-256955號公報(專利文獻2)中,為了提供洗淨後對金屬膜質無腐蝕、清洗效果等優異之抗蝕劑剝離液洗淨用化學清洗組合物,揭示有如下抗蝕劑剝離液洗淨用化學清洗組合物,其含有選自由有機胺系化合物、有機溶劑、三唑系防腐蝕劑、羥基酚類、沒食子酸烷基酯類、及還原劑類所組成之群中之防腐蝕劑及水。In addition, technology to suppress corrosion of metal films after cleaning is also being developed. For example, in Japanese Patent Laid-Open No. 2007-256955 (Patent Document 2), in order to provide a chemical cleaning composition for cleaning a resist stripping solution, which is excellent in no corrosion to metal films after cleaning and excellent cleaning effect, it is disclosed that The following chemical cleaning composition for resist stripping liquid cleaning, which contains selected from organic amine-based compounds, organic solvents, triazole-based anticorrosion agents, hydroxyphenols, gallic acid alkyl esters, and reducing agents Corrosion inhibitor and water in the group.

本發明於一態樣中,係關於一種基板之洗淨方法,其包括如下步驟:使用含有下述成分A、下述成分B及下述成分C之洗淨劑組合物,從表面具有含銅金屬層及樹脂遮罩之基板剝離樹脂遮罩。 成分A:下述式(I)所表示之四級銨氫氧化物及下述式(II)所表示之胺 成分B:還原劑 成分C:水 [化1]

Figure 02_image004
於上述式(I)中,R 1、R 2、R 3及R 4分別獨立為選自甲基、乙基、丙基、羥甲基、羥乙基及羥丙基之至少1種。 [化2]
Figure 02_image006
於上述式(II)中,R 5表示選自氫原子、甲基、乙基及胺基乙基之至少1種,R 6表示選自氫原子、羥乙基、羥丙基、甲基及乙基之至少1種,R 7表示選自胺基乙基、羥乙基及羥丙基之至少1種。 In one aspect, the present invention relates to a method for cleaning a substrate, comprising the steps of: using a detergent composition containing the following component A, the following component B, and the following component C, from the surface of the cleaning agent composition containing copper The metal layer and the substrate of the resin mask peel off the resin mask. Component A: A quaternary ammonium hydroxide represented by the following formula (I) and an amine represented by the following formula (II) Component B: Reducing agent Component C: Water
Figure 02_image004
In the above formula (I), R 1 , R 2 , R 3 and R 4 are each independently at least one selected from the group consisting of methyl, ethyl, propyl, hydroxymethyl, hydroxyethyl and hydroxypropyl. [hua 2]
Figure 02_image006
In the above formula (II), R 5 represents at least one selected from a hydrogen atom, methyl, ethyl and aminoethyl, and R 6 represents a hydrogen atom, hydroxyethyl, hydroxypropyl, methyl and At least one kind of ethyl group, and R 7 represents at least one kind selected from aminoethyl group, hydroxyethyl group and hydroxypropyl group.

本發明於一態樣中,係關於一種電子零件之製造方法,其包括如下步驟:使用本發明之洗淨方法,從表面具有含銅金屬層及樹脂遮罩之基板剝離樹脂遮罩。In one aspect, the present invention relates to a method for manufacturing an electronic component, comprising the steps of: using the cleaning method of the present invention, peeling off the resin mask from the substrate having the copper-containing metal layer and the resin mask on the surface.

本發明於一態樣中,係關於一種樹脂遮罩剝離用洗淨劑組合物,其含有下述成分A、下述成分B及下述成分C。 成分A:下述式(I)所表示之四級銨氫氧化物及下述式(II)所表示之胺 成分B:還原劑 成分C:水 [化3]

Figure 02_image008
於上述式(I)中,R 1、R 2、R 3及R 4分別獨立為選自甲基、乙基、丙基、羥甲基、羥乙基及羥丙基之至少1種。 [化4]
Figure 02_image010
於上述式(II)中,R 5表示選自氫原子、甲基、乙基及胺基乙基之至少1種,R 6表示選自氫原子、羥乙基、羥丙基、甲基及乙基之至少1種,R 7表示選自胺基乙基、羥乙基及羥丙基之至少1種。 In one aspect, the present invention relates to a detergent composition for peeling off a resin mask, which contains the following component A, the following component B, and the following component C. Component A: A quaternary ammonium hydroxide represented by the following formula (I) and an amine represented by the following formula (II) Component B: Reducing agent Component C: Water
Figure 02_image008
In the above formula (I), R 1 , R 2 , R 3 and R 4 are each independently at least one selected from the group consisting of methyl, ethyl, propyl, hydroxymethyl, hydroxyethyl and hydroxypropyl. [hua 4]
Figure 02_image010
In the above formula (II), R 5 represents at least one selected from a hydrogen atom, methyl, ethyl and aminoethyl, and R 6 represents a hydrogen atom, hydroxyethyl, hydroxypropyl, methyl and At least one kind of ethyl group, and R 7 represents at least one kind selected from aminoethyl group, hydroxyethyl group and hydroxypropyl group.

本發明於一態樣中,係關於一種樹脂遮罩剝離用洗淨劑組合物之用途,係用作電子零件之製造中之洗淨劑,上述樹脂遮罩剝離用洗淨劑組合物含有下述成分A、下述成分B及下述成分C。 成分A:下述式(I)所表示之四級銨氫氧化物及下述式(II)所表示之胺 成分B:還原劑 成分C:水 [化5]

Figure 02_image012
於上述式(I)中,R 1、R 2、R 3及R 4分別獨立為選自甲基、乙基、丙基、羥甲基、羥乙基及羥丙基之至少1種。 [化6]
Figure 02_image014
於上述式(II)中,R 5表示選自氫原子、甲基、乙基及胺基乙基之至少1種,R 6表示選自氫原子、羥乙基、羥丙基、甲基及乙基之至少1種,R 7表示選自胺基乙基、羥乙基及羥丙基之至少1種。 In one aspect, the present invention relates to the use of a cleaning composition for resin mask peeling, which is used as a cleaning agent in the manufacture of electronic parts, wherein the above-mentioned resin mask peeling cleaning composition contains the following Component A, component B described below, and component C described below. Component A: A quaternary ammonium hydroxide represented by the following formula (I) and an amine represented by the following formula (II) Component B: Reducing agent Component C: Water
Figure 02_image012
In the above formula (I), R 1 , R 2 , R 3 and R 4 are each independently at least one selected from the group consisting of methyl, ethyl, propyl, hydroxymethyl, hydroxyethyl and hydroxypropyl. [hua 6]
Figure 02_image014
In the above formula (II), R 5 represents at least one selected from a hydrogen atom, methyl, ethyl and aminoethyl, and R 6 represents a hydrogen atom, hydroxyethyl, hydroxypropyl, methyl and At least one kind of ethyl group, and R 7 represents at least one kind selected from aminoethyl group, hydroxyethyl group and hydroxypropyl group.

關於在印刷基板等上形成微細配線之方面,為了減少樹脂遮罩之殘存,而且為了減少微細配線或凸塊之形成所使用之焊料或鍍覆液等所含有之助劑等之殘存,對洗淨劑組合物要求較高之洗淨性。 此處,樹脂遮罩係指使用對於顯影液之溶解性等物性因光或電子束等發生變化的抗蝕劑而形成者。根據與光或電子束之反應方法,抗蝕劑可大致分為負型與正型。負型抗蝕劑具有若曝光則對顯影液之溶解性降低之特性,含有負型抗蝕劑之層(以下亦稱為「負型抗蝕層」)於曝光及顯影處理後,曝光部被用作樹脂遮罩。正型抗蝕劑具有若曝光則對顯影液之溶解性增大之特性,含有正型抗蝕劑之層(以下亦稱為「正型抗蝕層」)於曝光及顯影處理後,曝光部被去除,未曝光部被用作樹脂遮罩。藉由使用具有此種特性之樹脂遮罩,能夠形成金屬配線、及金屬柱或焊料凸塊等電路基板之微細連接部。 Regarding the formation of fine wiring on a printed circuit board, etc., in order to reduce the residue of the resin mask, and to reduce the residue of the solder used for the formation of the fine wiring or the bump, or the auxiliary agent contained in the plating solution, etc., cleaning is performed. Agent compositions require higher detergency. Here, the resin mask refers to a resist formed by using a resist whose physical properties, such as solubility in a developer, are changed by light, electron beam, or the like. According to the reaction method with light or electron beam, resists can be roughly classified into negative type and positive type. The negative-type resist has the property that the solubility to the developing solution decreases when exposed to light, and the layer containing the negative-type resist (hereinafter also referred to as "negative-type resist layer") is exposed and developed. Used as a resin mask. The positive resist has the property of increasing its solubility in the developing solution when exposed to light. is removed, and the unexposed portion is used as a resin mask. By using the resin mask having such characteristics, it is possible to form a fine connection portion of a circuit board such as metal wiring and metal pillars and solder bumps.

然而,隨著配線微細化,變得難以去除存在於微細間隙之樹脂遮罩,對洗淨劑組合物要求較高之樹脂遮罩去除性。又,由於大多配線或連接端子中使用之銅之腐蝕會導致封裝基板之品質及價值降低,因此對洗淨劑組合物要求較高之防腐蝕能力。此外,洗淨後之基板上之殘留物會產生阻礙後續步驟之蝕刻之問題,因此需要能夠減少該殘留物之洗淨劑組合物。However, with the miniaturization of wiring, it becomes difficult to remove the resin mask existing in the fine gaps, and high resin mask removability is required for the detergent composition. In addition, since the corrosion of copper used in many wirings and connection terminals leads to a decrease in the quality and value of the package substrate, high corrosion resistance is required for the cleaning composition. In addition, the residue on the cleaned substrate may hinder the etching of the subsequent steps, and thus a cleaning agent composition capable of reducing the residue is required.

因此,本發明提供一種能夠不大幅損害樹脂遮罩去除性(剝離性)、且不使洗淨後之基板上之殘留物大幅增加而抑制銅腐蝕的基板之洗淨方法、電子零件之製造方法、及樹脂遮罩剝離用洗淨劑組合物。Therefore, the present invention provides a method for cleaning a substrate and a method for manufacturing an electronic component, which can suppress copper corrosion without significantly impairing the removability (peelability) of the resin mask, and without significantly increasing the residue on the substrate after cleaning. , and a cleaning composition for resin mask peeling.

本發明係基於如下見解,即藉由將特定之有機含氮化合物(成分A)與還原劑(成分B)倂用,能夠抑制銅之腐蝕,並且從基板表面有效率地去除樹脂遮罩,此外,能夠減少洗淨後之基板上之殘留物。The present invention is based on the finding that by using a specific organic nitrogen-containing compound (component A) and a reducing agent (component B), corrosion of copper can be suppressed, and resin mask can be efficiently removed from the surface of the substrate, in addition , which can reduce the residue on the substrate after cleaning.

本發明於一態樣中,係關於一種基板之洗淨方法(以下亦稱為「本發明之洗淨方法」),其包括如下步驟:使用含有下述成分A、下述成分B及下述成分C之洗淨劑組合物,從表面具有含銅金屬層及樹脂遮罩之基板剝離樹脂遮罩。 成分A:上述式(I)所表示之四級銨氫氧化物及上述式(II)所表示之胺 成分B:還原劑 成分C:水 In one aspect, the present invention relates to a method for cleaning a substrate (hereinafter also referred to as "the cleaning method of the present invention"), which comprises the steps of: using the following components A, the following components B, and the following The detergent composition of component C peels the resin mask from the substrate having the copper-containing metal layer and the resin mask on the surface. Component A: the quaternary ammonium hydroxide represented by the above formula (I) and the amine represented by the above formula (II) Ingredient B: reducing agent Ingredient C: Water

根據本發明,可提供一種洗淨方法,其能夠不大幅損害樹脂遮罩去除性(剝離性)、且不使洗淨後之基板上之殘留物大幅增加而抑制銅腐蝕。並且,藉由使用本發明之洗淨方法,能夠以較高產率獲得高品質之電子零件。進而,藉由使用本發明之洗淨方法,能夠有效率地製造具有微細之配線圖案之電子零件。According to the present invention, it is possible to provide a cleaning method capable of suppressing copper corrosion without significantly impairing the removability (peelability) of the resin mask and without significantly increasing the residue on the substrate after cleaning. Furthermore, by using the cleaning method of the present invention, high-quality electronic parts can be obtained with high yield. Furthermore, by using the cleaning method of this invention, the electronic component which has a fine wiring pattern can be manufactured efficiently.

本發明之效果表現之作用機制之詳情雖有不明確之部分,但作如下推測。 於本發明中,認為特定之有機含氮化合物(成分A)滲透至樹脂遮罩內而促進調配至樹脂遮罩之鹼可溶性樹脂之解離,進而引起由解離所產生之電荷之排斥,藉此促進樹脂遮罩之剝離。另一方面,認為特定之有機含氮化合物(成分A)亦參與銅之蝕刻(腐蝕)。然而,認為於本發明中,藉由將特定之有機含氮化合物(成分A)與還原劑(成分B)倂用,從而利用還原劑(成分B)之作用抑制銅表面之帶正電,抑制由特定之有機含氮化合物(成分A)之配位所導致之銅之蝕刻(腐蝕)。認為其結果,於特定之有機含氮化合物(成分A)之存在下,抑制銅之蝕刻(腐蝕),並且表現出良好之剝離性能(樹脂遮罩去除性)。 進而,認為因還原劑(成分B)並非覆膜型而為非覆膜型,故能夠抑制銅之蝕刻(腐蝕),並且減少洗淨後之基板上之殘留物。 但本發明亦可不限定於該機制地解釋。 Although the details of the action mechanism of the effect of the present invention are not clear, the following assumptions are made. In the present invention, it is considered that a specific organic nitrogen-containing compound (ingredient A) penetrates into the resin mask to promote the dissociation of the alkali-soluble resin formulated into the resin mask, thereby causing the repulsion of the charges generated by the dissociation, thereby promoting the The peeling of the resin mask. On the other hand, it is considered that a specific organic nitrogen-containing compound (component A) also participates in the etching (corrosion) of copper. However, it is considered that in the present invention, by using a specific organic nitrogen-containing compound (component A) and a reducing agent (ingredient B), the action of the reducing agent (ingredient B) is used to suppress the positive charging of the copper surface, thereby suppressing the Etching (corrosion) of copper caused by the coordination of a specific organic nitrogen-containing compound (ingredient A). As a result, it is considered that in the presence of the specific organic nitrogen-containing compound (component A), copper etching (corrosion) is suppressed, and good peeling performance (resin mask removability) is exhibited. Furthermore, since the reducing agent (component B) is not a film type but a non-film type, it is considered that the etching (corrosion) of copper can be suppressed, and the residue on the substrate after cleaning can be reduced. However, the present invention may be explained without being limited to this mechanism.

於本發明中,被剝離、去除之樹脂遮罩係指用以保護物質表面免受蝕刻、鍍覆、加熱等處理之影響之遮罩,即作為保護膜發揮功能之遮罩。作為樹脂遮罩,於一個或複數個實施方式中,可例舉:曝光及顯影步驟後之抗蝕層、實施了曝光及顯影之至少一種處理(以下亦稱為「經曝光及/或顯影處理」)之抗蝕層、或經硬化之抗蝕層。作為形成樹脂遮罩之樹脂材料,於一個或複數個實施方式中,可例舉:膜狀感光性樹脂、抗蝕劑膜、或光阻劑。抗蝕劑膜可使用通用者。 樹脂遮罩於一個或複數個實施方式中係用於鍍銅或鍍錫處理之鍍銅或鍍錫用遮罩。 In the present invention, the peeled and removed resin mask refers to a mask used to protect the surface of a substance from etching, plating, heating and other treatments, that is, a mask that functions as a protective film. As the resin mask, in one or more embodiments, there may be exemplified: a resist layer after exposure and development steps, at least one treatment of exposure and development (hereinafter also referred to as "exposure and/or development treatment") ”) resist layer, or hardened resist layer. As a resin material which forms a resin mask, in one or a plurality of embodiments, a film-like photosensitive resin, a resist film, or a photoresist can be mentioned. A general-purpose resist film can be used. In one or more embodiments, the resin mask is a mask for copper or tin plating for copper or tin plating.

[洗淨劑組合物] 本發明之洗淨劑組合物於一個或複數個實施方式中係含有後述之成分A、成分B及成分C之樹脂遮罩剝離用洗淨劑組合物。 [detergent composition] The detergent composition of this invention is the detergent composition for resin mask peeling which contains the component A, the component B, and the component C mentioned later in one or more embodiment.

[有機含氮化合物(成分A)] 本發明之洗淨劑組合物含有式(I)所表示之四級銨氫氧化物(成分A1)及式(II)所表示之胺(成分A2)之2成分之組合(以下亦簡稱為「成分A」)。成分A1可為1種,亦可為2種以上之組合。成分A2可為1種,亦可為2種以上之組合。 [Organic nitrogen-containing compound (ingredient A)] The detergent composition of the present invention contains a combination of two components (hereinafter also abbreviated as "" Ingredient A"). Component A1 may be one type or a combination of two or more types. Component A2 may be one type or a combination of two or more types.

[化7]

Figure 02_image016
[hua 7]
Figure 02_image016

於上述式(I)中,R 1、R 2、R 3及R 4分別獨立為選自甲基、乙基、丙基、羥甲基、羥乙基及羥丙基之至少1種。 In the above formula (I), R 1 , R 2 , R 3 and R 4 are each independently at least one selected from the group consisting of methyl, ethyl, propyl, hydroxymethyl, hydroxyethyl and hydroxypropyl.

[化8]

Figure 02_image018
[hua 8]
Figure 02_image018

於上述式(II)中,R 5表示選自氫原子、甲基、乙基及胺基乙基之至少1種,R 6表示選自氫原子、羥乙基、羥丙基、甲基及乙基之至少1種,R 7表示選自胺基乙基、羥乙基及羥丙基之至少1種。 In the above formula (II), R 5 represents at least one selected from a hydrogen atom, methyl, ethyl and aminoethyl, and R 6 represents a hydrogen atom, hydroxyethyl, hydroxypropyl, methyl and At least one kind of ethyl group, and R 7 represents at least one kind selected from aminoethyl group, hydroxyethyl group and hydroxypropyl group.

作為式(I)所表示之四級銨氫氧化物(成分A1),例如可例舉包含四級銨陽離子與氫氧化物之鹽等。作為四級銨氫氧化物之具體例,可例舉選自四甲基銨氫氧化物(TMAH)、四乙基銨氫氧化物、四丙基銨氫氧化物、2-羥基乙基三甲基銨氫氧化物(膽鹼)、2-羥基乙基三乙基銨氫氧化物、2-羥基乙基三丙基銨氫氧化物、2-羥基丙基三甲基銨氫氧化物、2-羥基丙基三乙基銨氫氧化物、2-羥基丙基三丙基銨氫氧化物、二甲基雙(2-羥基乙基)銨氫氧化物、二乙基雙(2-羥基乙基)銨氫氧化物、二丙基雙(2-羥基乙基)銨氫氧化物、三(2-羥基乙基)甲基銨氫氧化物、三(2-羥基乙基)乙基銨氫氧化物、三(2-羥基乙基)丙基銨氫氧化物、四(2-羥基乙基)銨氫氧化物、及四(2-羥基丙基)銨氫氧化物之至少1種。於該等之中,就提高樹脂遮罩去除性之觀點而言,較佳為四甲基銨氫氧化物及四乙基銨氫氧化物,更佳為四甲基銨氫氧化物(TMAH)。As the quaternary ammonium hydroxide (component A1) represented by the formula (I), for example, a salt containing a quaternary ammonium cation and a hydroxide can be mentioned. Specific examples of the quaternary ammonium hydroxide include tetramethylammonium hydroxide (TMAH), tetraethylammonium hydroxide, tetrapropylammonium hydroxide, and 2-hydroxyethyltrimethylammonium hydroxide. ammonium hydroxide (choline), 2-hydroxyethyltriethylammonium hydroxide, 2-hydroxyethyltripropylammonium hydroxide, 2-hydroxypropyltrimethylammonium hydroxide, 2 -Hydroxypropyltriethylammonium hydroxide, 2-hydroxypropyltripropylammonium hydroxide, dimethylbis(2-hydroxyethyl)ammonium hydroxide, diethylbis(2-hydroxyethyl) base) ammonium hydroxide, dipropylbis(2-hydroxyethyl)ammonium hydroxide, tris(2-hydroxyethyl)methylammonium hydroxide, tris(2-hydroxyethyl)ethylammonium hydrogen At least one of oxide, tris(2-hydroxyethyl)propylammonium hydroxide, tetrakis(2-hydroxyethyl)ammonium hydroxide, and tetrakis(2-hydroxypropyl)ammonium hydroxide. Among them, from the viewpoint of improving the removability of the resin mask, tetramethylammonium hydroxide and tetraethylammonium hydroxide are preferred, and tetramethylammonium hydroxide (TMAH) is more preferred. .

作為式(II)所表示之胺(成分A2),例如可例舉:烷醇胺、一至三級胺及雜環化合物等。作為胺之具體例,可例舉選自單乙醇胺(MEA)、單異丙醇胺、N-甲基單乙醇胺、N-甲基異丙醇胺、N-乙基單乙醇胺、N-乙基異丙醇胺、二乙醇胺、二異丙醇胺、N-二甲基單乙醇胺、N-二甲基單異丙醇胺、N-甲基二乙醇胺、N-甲基二異丙醇胺、N-二乙基單乙醇胺、N-二乙基單異丙醇胺、N-乙基二乙醇胺、N-乙基二異丙醇胺、N-(β-胺基乙基)乙醇胺、N-(β-胺基乙基)異丙醇胺、N-(β-胺基乙基)二乙醇胺、N-(β-胺基乙基)二異丙醇胺、1-甲基哌𠯤、1-(2-羥基乙基)吡咯啶、1-(2-羥基乙基)哌𠯤、乙二胺及二伸乙基三胺之至少1種。於該等之中,就提高樹脂遮罩去除性之觀點而言,較佳為單乙醇胺(MEA)及二乙醇胺,更佳為單乙醇胺(MEA)。As an amine (component A2) represented by Formula (II), an alkanolamine, a primary-tertiary amine, a heterocyclic compound, etc. are mentioned, for example. Specific examples of the amine include monoethanolamine (MEA), monoisopropanolamine, N-methylmonoethanolamine, N-methylisopropanolamine, N-ethylmonoethanolamine, N-ethyl Isopropanolamine, diethanolamine, diisopropanolamine, N-dimethylmonoethanolamine, N-dimethylmonoisopropanolamine, N-methyldiethanolamine, N-methyldiisopropanolamine, N-diethylmonoethanolamine, N-diethylmonoisopropanolamine, N-ethyldiethanolamine, N-ethyldiisopropanolamine, N-(β-aminoethyl)ethanolamine, N- (β-aminoethyl)isopropanolamine, N-(β-aminoethyl)diethanolamine, N-(β-aminoethyl)diisopropanolamine, 1-methylpiperazine, 1 At least one of -(2-hydroxyethyl)pyrrolidine, 1-(2-hydroxyethyl)piperidine, ethylenediamine, and dipethylenetriamine. Among these, from the viewpoint of improving the removability of the resin mask, monoethanolamine (MEA) and diethanolamine are preferable, and monoethanolamine (MEA) is more preferable.

關於本發明之洗淨劑組合物之使用時之成分A之含量(成分A1之含量與成分A2之含量之合計含量),就不大幅損害樹脂遮罩去除性(剝離性)、且不使洗淨後之基板上之殘留物大幅增加而抑制銅腐蝕之觀點而言,較佳為5質量%以上,更佳為6質量%以上,進而較佳為7質量%以上,並且,就相同之觀點而言,較佳為15質量%以下,更佳為13質量%以下,進而較佳為12質量%以下。更具體而言,本發明之洗淨劑組合物之使用時之成分A之含量較佳為5質量%以上15質量%以下,更佳為6質量%以上13質量%以下,進而較佳為7質量%以上12質量%以下。於成分A1為2種以上之組合之情形時,成分A1之含量係指該等之合計含量。於成分A2為2種以上之組合之情形,成分A2之含量係指該等之合計含量。Regarding the content of the component A (the total content of the content of the component A1 and the content of the component A2) at the time of use of the detergent composition of the present invention, the removability (peelability) of the resin mask is not greatly impaired, and the cleaning From the viewpoint that the residue on the cleaned substrate is greatly increased to suppress copper corrosion, it is preferably 5 mass % or more, more preferably 6 mass % or more, and still more preferably 7 mass % or more, and from the same viewpoint More preferably, it is 15 mass % or less, More preferably, it is 13 mass % or less, More preferably, it is 12 mass % or less. More specifically, the content of the component A at the time of use of the detergent composition of the present invention is preferably 5 mass % or more and 15 mass % or less, more preferably 6 mass % or more and 13 mass % or less, and still more preferably 7 mass % or less. Mass % or more and 12 mass % or less. When the component A1 is a combination of two or more types, the content of the component A1 refers to the total content of the components. When component A2 is a combination of two or more types, the content of component A2 refers to the total content of these components.

關於本發明之洗淨劑組合物中之成分A1之含量相對於成分A2之含量之比(質量比A1/A2),就不大幅損害樹脂遮罩去除性(剝離性)、且不使洗淨後之基板上之殘留物大幅增加而抑制銅腐蝕之觀點而言,較佳為0.1以上,更佳為0.3以上,進而較佳為0.6以上,並且,就相同之觀點而言,較佳為2以下,更佳為1.5以下,進而較佳為1以下。更具體而言,質量比A1/A2較佳為0.1以上2以下,更佳為0.3以上1.5以下,進而較佳為0.6以上1以下。Regarding the ratio (mass ratio A1/A2) of the content of the component A1 to the content of the component A2 in the detergent composition of the present invention, the removability (peelability) of the resin mask is not greatly impaired, and the cleaning From the viewpoint that the residue on the substrate is greatly increased after that and suppresses copper corrosion, it is preferably 0.1 or more, more preferably 0.3 or more, still more preferably 0.6 or more, and, from the same viewpoint, preferably 2 Below, it is more preferable that it is 1.5 or less, and it is still more preferable that it is 1 or less. More specifically, the mass ratio A1/A2 is preferably 0.1 or more and 2 or less, more preferably 0.3 or more and 1.5 or less, and still more preferably 0.6 or more and 1 or less.

於本發明中,「洗淨劑組合物之使用時之各成分之含量」係指洗淨時、即洗淨劑組合物開始用於洗淨之時間點之各成分之含量。In the present invention, "the content of each component at the time of use of the detergent composition" refers to the content of each component at the time of washing, that is, the point in time when the detergent composition starts to be used for washing.

[還原劑(成分B)] 本發明之洗淨劑組合物含有還原劑(以下亦簡稱為「成分B」)。作為成分B,就不大幅損害樹脂遮罩去除性(剝離性)、且不使洗淨後之基板上之殘留物大幅增加而抑制銅腐蝕之觀點而言,可例舉選自抗壞血酸(以下亦稱為「成分B1」)、及包含含氮雜芳環之至少1個氫原子被取代為羥基之含氮雜芳環的N-氧化物化合物(以下亦稱為「成分B2」)之至少1種。於該等之中,就洗淨劑組合物之穩定性之觀點而言,較佳為成分B2。作為上述之鹽,可例舉:鹼金屬鹽、鹼土族金屬鹽、有機胺鹽、及銨鹽等。成分B可單獨使用1種,亦可為2種以上之組合。 [Reducing agent (ingredient B)] The detergent composition of the present invention contains a reducing agent (hereinafter also simply referred to as "component B"). As the component B, from the viewpoint of suppressing copper corrosion without significantly impairing the removability (peelability) of the resin mask, and without significantly increasing the residue on the substrate after cleaning, ascorbic acid (hereinafter also referred to as Component B) can be selected from the group consisting of ascorbic acid referred to as "component B1"), and at least 1 of an N-oxide compound containing a nitrogen-containing heteroaromatic ring in which at least one hydrogen atom of a nitrogen-containing heteroaromatic ring is substituted with a hydroxyl group (hereinafter also referred to as "component B2") kind. Among these, from the viewpoint of the stability of the detergent composition, ingredient B2 is preferred. As said salt, an alkali metal salt, an alkaline earth metal salt, an organic amine salt, an ammonium salt, etc. are mentioned. Component B may be used alone or in combination of two or more.

作為成分B1,例如可例舉選自L-抗壞血酸、D-抗壞血酸、異抗壞血酸及該等之鹽之1種以上。 成分B2之含氮雜芳環骨架所包含之至少1個氮原子形成N-氧化物。作為成分B2所包含之含氮雜芳環,於一個或複數個實施方式中,可例舉單環或雙環之縮合環。作為成分B2所包含之含氮雜芳環之氮原子數,就不大幅損害樹脂遮罩去除性(剝離性)、且不使洗淨後之基板上之殘留物大幅增加而抑制銅腐蝕之觀點而言,較佳為1~3個,更佳為1或2個,進而較佳為1個。作為成分B2所包含之含氮雜芳環骨架,於一個或複數個實施方式中,可例舉吡啶-N-氧化物骨架。於本發明中,吡啶-N-氧化物骨架表示吡啶環所包含之氮原子形成N-氧化物之構成。作為成分B2,可例舉選自具有至少1個氫原子被取代為羥基之吡啶環之N-氧化物化合物及該等之鹽之至少1種。作為成分B2之具體例,可例舉2-羥基吡啶-N-氧化物等。 As the component B1, one or more kinds selected from L-ascorbic acid, D-ascorbic acid, erythorbic acid, and salts thereof may, for example, be mentioned. At least one nitrogen atom contained in the nitrogen-containing heteroaromatic ring skeleton of component B2 forms an N-oxide. As the nitrogen-containing heteroaromatic ring contained in the component B2, in one or more embodiments, a monocyclic or bicyclic condensed ring can be exemplified. The number of nitrogen atoms of the nitrogen-containing heteroaromatic ring contained in the component B2 is from the viewpoint of suppressing copper corrosion without significantly impairing the removability (peelability) of the resin mask and without significantly increasing the residue on the substrate after cleaning. Specifically, 1 to 3 are preferable, 1 or 2 are more preferable, and 1 is still more preferable. As the nitrogen-containing heteroaromatic ring skeleton contained in the component B2, in one or more embodiments, a pyridine-N-oxide skeleton can be exemplified. In the present invention, the pyridine-N-oxide skeleton refers to a structure in which a nitrogen atom contained in a pyridine ring forms an N-oxide. As the component B2, at least one kind selected from the group consisting of N-oxide compounds having a pyridine ring in which at least one hydrogen atom is substituted with a hydroxyl group, and salts thereof can be exemplified. As a specific example of component B2, 2-hydroxypyridine-N-oxide etc. are mentioned.

於本發明中,N-氧化物化合物於一個或複數個實施方式中表示具有N-氧化物基(N→O基)之化合物。N-氧化物化合物可具有1或2個以上之N→O基,就獲取容易性之觀點而言,N→O基之數較佳為1個。In the present invention, the N-oxide compound represents a compound having an N-oxide group (N→O group) in one or more embodiments. The N-oxide compound may have one or two or more N→O groups, and the number of N→O groups is preferably one from the viewpoint of availability.

成分B就不大幅損害樹脂遮罩去除性(剝離性)、且不使洗淨後之基板上之殘留物大幅增加而抑制銅腐蝕之觀點而言,較佳為抗壞血酸及2-羥基吡啶-N-氧化物之至少一者。Component B is preferably ascorbic acid and 2-hydroxypyridine-N from the viewpoint of suppressing copper corrosion without significantly impairing the removability (peelability) of the resin mask and without significantly increasing the residue on the substrate after cleaning. - at least one of the oxides.

關於本發明之洗淨劑組合物之使用時之成分B之含量,就不大幅損害樹脂遮罩去除性(剝離性)、且不使洗淨後之基板上之殘留物大幅增加而抑制銅腐蝕之觀點而言,較佳為0.05質量%以上,更佳為0.1質量%以上,進而較佳為0.2質量%以上,並且,就相同之觀點而言,較佳為5質量%以下,更佳為3質量%以下,進而較佳為1質量%以下。更具體而言,成分B之含量較佳為0.05質量%以上5質量%以下,更佳為0.1質量%以上3質量%以下,進而較佳為0.2質量%以上1質量%以下。於成分B為2種以上之組合之情形時,成分B之含量係指該等之合計含量。The content of the component B when the detergent composition of the present invention is used does not greatly impair the removability (peelability) of the resin mask, and suppresses copper corrosion without greatly increasing the residue on the substrate after cleaning. From a viewpoint, it is preferably 0.05 mass % or more, more preferably 0.1 mass % or more, and still more preferably 0.2 mass % or more, and from the same viewpoint, preferably 5 mass % or less, more preferably 3 mass % or less, more preferably 1 mass % or less. More specifically, the content of component B is preferably 0.05 mass % or more and 5 mass % or less, more preferably 0.1 mass % or more and 3 mass % or less, and still more preferably 0.2 mass % or more and 1 mass % or less. When component B is a combination of two or more types, the content of component B refers to the total content of these components.

關於本發明之洗淨劑組合物中之成分A之含量相對於成分B之含量之比(質量比A/B),就不大幅損害樹脂遮罩去除性(剝離性)、且不使洗淨後之基板上之殘留物大幅增加而抑制銅腐蝕之觀點而言,較佳為8以上,更佳為14以上,進而較佳為18以上,進而較佳為20以上,並且,就相同之觀點而言,較佳為50以下,更佳為45以下,進而較佳為40以下。更具體而言,質量比A/B較佳為8以上50以下,更佳為14以上45以下,進而較佳為18以上45以下,進而較佳為20以上40以下。Regarding the ratio of the content of component A to the content of component B in the detergent composition of the present invention (mass ratio A/B), the resin mask removability (peelability) is not greatly impaired, and cleaning From the viewpoint that the residue on the substrate is greatly increased afterward to suppress copper corrosion, it is preferably 8 or more, more preferably 14 or more, more preferably 18 or more, and still more preferably 20 or more, and from the same viewpoint Specifically, it is preferably 50 or less, more preferably 45 or less, and still more preferably 40 or less. More specifically, the mass ratio A/B is preferably 8 or more and 50 or less, more preferably 14 or more and 45 or less, still more preferably 18 or more and 45 or less, and still more preferably 20 or more and 40 or less.

[水(成分C)] 作為本發明之洗淨劑組合物所包含之水(以下亦簡稱為「成分C」),於一個或複數個實施方式中,可例舉離子交換水、逆滲透水、蒸餾水、純水、及超純水等。 [Water (ingredient C)] In one or more embodiments, ion-exchanged water, reverse osmosis water, distilled water, pure water, and Ultrapure water, etc.

本發明之洗淨劑組合物中之成分C之含量可設為去除了成分A、成分B及後述之任意成分後之殘餘。具體而言,關於本發明之洗淨劑組合物之使用時之成分C之含量,就不大幅損害樹脂遮罩去除性(剝離性)、且不使洗淨後之基板上之殘留物大幅增加而抑制銅腐蝕之觀點、降低排水處理負荷之觀點、及降低對基板之影響之觀點而言,較佳為50質量%以上,更佳為60質量%以上,進而較佳為70質量%以上,進而較佳為80質量%以上,並且,就相同之觀點而言,較佳為99質量%以下,更佳為98質量%以下,進而較佳為97質量%以下。更具體而言,本發明之洗淨劑組合物之使用時之成分C之含量較佳為50質量%以上99質量%以下,更佳為60質量%以上99質量%以下,進而較佳為70質量%以上98質量%以下,進而較佳為80質量%以上97質量%以下。The content of the component C in the detergent composition of the present invention can be set as the residue after removing the component A, the component B, and the optional components described later. Specifically, the content of component C when the detergent composition of the present invention is used does not greatly impair the removability (peelability) of the resin mask and does not significantly increase the residue on the substrate after cleaning From the viewpoint of suppressing copper corrosion, reducing the load of drainage treatment, and reducing the influence on the substrate, it is preferably 50 mass % or more, more preferably 60 mass % or more, and still more preferably 70 mass % or more. More preferably, it is 80 mass % or more, and from the same viewpoint, it is preferably 99 mass % or less, more preferably 98 mass % or less, and still more preferably 97 mass % or less. More specifically, the content of the component C in use of the detergent composition of the present invention is preferably 50% by mass or more and 99% by mass or less, more preferably 60% by mass or more and 99% by mass or less, and still more preferably 70% by mass. The mass % or more is 98 mass % or less, more preferably 80 mass % or more and 97 mass % or less.

關於本發明之洗淨劑組合物之使用時之成分A、成分B及成分C之合計量,就不大幅損害樹脂遮罩去除性(剝離性)、且不使洗淨後之基板上之殘留物大幅增加而抑制銅腐蝕之觀點而言,較佳為60質量%以上,更佳為90質量%以上,進而較佳為95質量%以上。The total amount of Component A, Component B, and Component C when using the detergent composition of the present invention does not greatly impair the removability (peelability) of the resin mask and does not leave residues on the substrate after cleaning From the viewpoint of suppressing copper corrosion due to a large increase in the amount of copper, the content is preferably 60% by mass or more, more preferably 90% by mass or more, and still more preferably 95% by mass or more.

[有機溶劑(成分D)] 本發明之洗淨劑組合物於一個或複數個實施方式中,就不大幅損害樹脂遮罩去除性(剝離性)、且不使洗淨後之基板上之殘留物大幅增加而抑制銅腐蝕之觀點而言,亦可進而含有有機溶劑(以下亦簡稱為「成分D」)。成分D可為1種,亦可為2種以上之組合。 作為成分D,於一個或複數個實施方式中,可例舉選自二醇醚及芳香族酮之至少1種之溶劑。 作為二醇醚,就相同之觀點而言,可例舉如下化合物,其具有對碳數1以上8以下之醇加成1以上3莫耳以下之乙二醇而獲得之結構。作為二醇醚之具體例,可例舉選自二乙二醇單丁醚(BDG)、乙二醇單苄醚、二乙二醇單己醚、乙二醇單苯醚、及二乙二醇二乙醚之至少1種。 作為芳香族酮,就相同之觀點而言,可例舉苯乙酮等。 [Organic solvent (ingredient D)] In one or more embodiments, the detergent composition of the present invention does not greatly impair the removability (peelability) of the resin mask, and suppresses copper corrosion without greatly increasing the residue on the substrate after cleaning. From a viewpoint, an organic solvent (henceforth also abbreviated as "component D") may be further contained. Component D may be one type or a combination of two or more types. As component D, in one or a plurality of embodiments, at least one solvent selected from glycol ethers and aromatic ketones may, for example, be mentioned. From the same viewpoint, the glycol ether includes a compound having a structure obtained by adding 1 to 3 mol or less of ethylene glycol to an alcohol having 1 to 8 carbon atoms. Specific examples of glycol ethers include diethylene glycol monobutyl ether (BDG), ethylene glycol monobenzyl ether, diethylene glycol monohexyl ether, ethylene glycol monophenyl ether, and diethylene glycol. At least one kind of alcohol diethyl ether. As an aromatic ketone, acetophenone etc. are mentioned from the same viewpoint.

於本發明之洗淨劑組合物含有成分D之情形時,關於本發明之洗淨劑組合物之使用時之成分D之含量,就不大幅損害樹脂遮罩去除性(剝離性)、且不使洗淨後之基板上之殘留物大幅增加而抑制銅腐蝕之觀點而言,較佳為1質量%以上,更佳為1.5質量%以上,進而較佳為2質量%以上,並且,就相同之觀點而言,較佳為40質量%以下,更佳為20質量%以下,進而較佳為5質量%以下。更具體而言,使用時之成分D之含量較佳為1質量%以上40質量%以下,更佳為1.5質量%以上20質量%以下,進而較佳為2質量%以上5質量%以下。於成分D為2種以上之組合之情形時,成分D之含量係指該等之合計含量。When the detergent composition of the present invention contains the component D, the content of the component D at the time of use of the detergent composition of the present invention does not greatly impair the removability (peelability) of the resin mask, and does not From the viewpoint of significantly increasing the residue on the cleaned substrate and suppressing copper corrosion, it is preferably 1 mass % or more, more preferably 1.5 mass % or more, still more preferably 2 mass % or more, and the same From a viewpoint, 40 mass % or less is preferable, 20 mass % or less is more preferable, and 5 mass % or less is still more preferable. More specifically, the content of component D at the time of use is preferably 1 mass % or more and 40 mass % or less, more preferably 1.5 mass % or more and 20 mass % or less, and still more preferably 2 mass % or more and 5 mass % or less. When component D is a combination of two or more types, the content of component D refers to the total content of these components.

[螯合劑(成分E)] 本發明之洗淨劑組合物於一個或複數個實施方式中,就不大幅損害樹脂遮罩去除性(剝離性)、且不使洗淨後之基板上之殘留物大幅增加而抑制銅腐蝕之觀點而言,可進而含有螯合劑(以下亦簡稱為「成分E」)。成分E可為1種,亦可為2種以上之組合。 作為成分E,例如可例舉具有2個以上之選自羧基及膦酸基之至少1種酸基之化合物,就相同之觀點而言,較佳為如下化合物,其具有較佳為4個以下之上述酸基。作為成分E之具體例,於一個或複數個實施方式中,可例舉:胺基三亞甲基膦酸、2-膦酸基丁烷-1,2,4-三羧酸、及依替膦酸(1-羥基乙烷-1,1-二膦酸,HEDP)等。於該等之中,就降低環境負荷之觀點而言,較佳為2-膦酸基丁烷-1,2,4-三羧酸、依替膦酸(HEDP)等不含氮原子之化合物。 [chelating agent (ingredient E)] In one or more embodiments, the detergent composition of the present invention does not greatly impair the removability (peelability) of the resin mask, and suppresses copper corrosion without greatly increasing the residue on the substrate after cleaning. From the viewpoint, a chelating agent (hereinafter also simply referred to as "component E") may be further contained. Component E may be one type or a combination of two or more types. As the component E, for example, a compound having at least one acid group selected from a carboxyl group and a phosphonic acid group can be mentioned, and from the same viewpoint, the following compounds are preferred, and the compound having at least four acid groups is preferred. the above acid group. As a specific example of component E, in one or a plurality of embodiments, aminotrimethylenephosphonic acid, 2-phosphonobutane-1,2,4-tricarboxylic acid, and etidronate may, for example, be mentioned. acid (1-hydroxyethane-1,1-diphosphonic acid, HEDP), etc. Among them, from the viewpoint of reducing environmental load, compounds containing no nitrogen atom such as 2-phosphonobutane-1,2,4-tricarboxylic acid and etidronic acid (HEDP) are preferred. .

本發明之洗淨劑組合物含有成分E之情形時,關於本發明之洗淨劑組合物之使用時之成分E之含量,就不大幅損害樹脂遮罩去除性(剝離性)、且不使洗淨後之基板上之殘留物大幅增加而抑制銅腐蝕之觀點而言,較佳為0.5質量%以上,更佳為1質量%以上,並且,就相同之觀點而言,較佳為5質量%以下,更佳為3質量%以下。更具體而言,使用時之成分E之含量較佳為0.5質量%以上5質量%以下,更佳為1質量%以上3質量%以下。於成分E為2種以上之組合之情形時,成分E之含量係指該等之合計含量。When the detergent composition of the present invention contains the component E, the content of the component E at the time of use of the detergent composition of the present invention does not greatly impair the removability (peelability) of the resin mask, and the From the viewpoint that the residue on the substrate after cleaning is greatly increased to suppress copper corrosion, it is preferably 0.5 mass % or more, more preferably 1 mass % or more, and from the same viewpoint, 5 mass % is preferable % or less, more preferably 3 mass % or less. More specifically, the content of the component E in use is preferably 0.5 mass % or more and 5 mass % or less, more preferably 1 mass % or more and 3 mass % or less. When component E is a combination of two or more types, the content of component E refers to the total content of these components.

[成分F:有機酸之銨鹽] 本發明之洗淨劑組合物於一個或複數個實施方式中,就不大幅損害樹脂遮罩去除性(剝離性)、且不使洗淨後之基板上之殘留物大幅增加而抑制銅腐蝕之觀點而言,可進而含有有機酸之銨鹽之至少1種(以下亦稱為「成分F」)。作為有機酸之銨鹽,就相同之觀點而言,較佳為碳數1~5之羧酸之銨鹽,更佳為甲酸銨。成分F可為1種,亦可為2種以上之組合。 [Ingredient F: Ammonium salt of organic acid] In one or more embodiments, the detergent composition of the present invention does not greatly impair the removability (peelability) of the resin mask, and suppresses copper corrosion without greatly increasing the residue on the substrate after cleaning. From a viewpoint, at least one type of ammonium salt of an organic acid (hereinafter also referred to as "component F") may be further contained. From the same viewpoint, the ammonium salt of an organic acid is preferably an ammonium salt of a carboxylic acid having 1 to 5 carbon atoms, and more preferably ammonium formate. Component F may be one type or a combination of two or more types.

於本發明之洗淨劑組合物含有成分F之情形時,關於本發明之洗淨劑組合物之使用時之成分F之含量,就不大幅損害樹脂遮罩去除性(剝離性)、且不使洗淨後之基板上之殘留物大幅增加而抑制銅腐蝕之觀點而言,較佳為0.1質量%以上,更佳為0.2質量%以上,進而較佳為0.3質量%以上,並且,就相同之觀點而言,較佳為2質量%以下,更佳為1.5質量%以下,進而較佳為1質量%以下。更具體而言,成分F之含量較佳為0.1質量%以上2質量%以下,更佳為0.2質量%以上1.5質量%以下,進而較佳為0.3質量%以上1質量%以下。於成分F為2種以上之組合之情形時,成分F之含量係指該等之合計含量。When the detergent composition of the present invention contains the component F, the content of the component F at the time of use of the detergent composition of the present invention does not greatly impair the removability (peelability) of the resin mask, and the From the viewpoint of significantly increasing the residue on the substrate after cleaning and suppressing copper corrosion, it is preferably 0.1 mass % or more, more preferably 0.2 mass % or more, still more preferably 0.3 mass % or more, and the same From a viewpoint, 2 mass % or less is preferable, 1.5 mass % or less is more preferable, and 1 mass % or less is still more preferable. More specifically, the content of component F is preferably 0.1 mass % or more and 2 mass % or less, more preferably 0.2 mass % or more and 1.5 mass % or less, and still more preferably 0.3 mass % or more and 1 mass % or less. When component F is a combination of two or more types, the content of component F refers to the total content of these components.

本發明之洗淨劑組合物於一個或複數個實施方式中,就提高樹脂遮罩去除性之觀點而言,較佳為進而含有成分D、成分E及成分F。In one or a plurality of embodiments, the detergent composition of the present invention preferably further contains Component D, Component E, and Component F from the viewpoint of improving the removability of the resin mask.

[其他成分] 本發明之洗淨劑組合物於不損害本發明之效果之範圍內,除上述成分A~F以外,可視需要進而含有其他成分。作為其他成分,可例舉通常之洗淨劑中可使用之成分,例如可例舉:成分A以外之鹼劑、成分D以外之有機溶劑、界面活性劑、成分E以外之螯合劑、增黏劑、分散劑、防銹劑、高分子化合物、助溶劑、抗氧化劑、防腐劑、消泡劑、及抗菌劑等。 本發明之洗淨劑組合物之使用時之其他成分之含量較佳為0質量%以上2質量%以下,更佳為0質量%以上1.5質量%以下,進而較佳為0質量%以上1.3質量%以下,進而更佳為0質量%以上1質量%以下。 [other ingredients] The detergent composition of the present invention may further contain other components as necessary in addition to the above-mentioned components A to F within the range that does not impair the effects of the present invention. As other components, components that can be used in ordinary detergents can be exemplified, for example, alkali agents other than component A, organic solvents other than component D, surfactants, chelating agents other than component E, thickeners Agents, dispersants, rust inhibitors, polymer compounds, cosolvents, antioxidants, preservatives, defoaming agents, and antibacterial agents, etc. The content of other components at the time of use of the detergent composition of the present invention is preferably 0 mass % or more and 2 mass % or less, more preferably 0 mass % or more and 1.5 mass % or less, still more preferably 0 mass % or more and 1.3 mass % % or less, more preferably 0 mass % or more and 1 mass % or less.

本發明之洗淨劑組合物於一個或複數個實施方式中,較佳為不含三唑系防腐蝕劑。例如,於一個或複數個實施方式中,本發明之洗淨劑組合物之使用時之三唑系防腐蝕劑之含量未達0.005質量%。In one or more embodiments, the detergent composition of the present invention preferably does not contain a triazole-based anticorrosion agent. For example, in one or more embodiments, the content of the triazole-based anticorrosion agent at the time of use of the cleaning composition of the present invention is less than 0.005 mass %.

本發明之洗淨劑組合物之使用時之來自成分A、成分B及任意成分(成分D、成分E、成分F、其他成分)的有機物之總含量就降低排水處理負荷、及降低對基板之影響之觀點而言,較佳為30質量%以下,更佳為25質量%以下,進而較佳為20質量%以下,進而更佳為16質量%以下,並且,就提高樹脂遮罩去除性之觀點而言,較佳為2質量%以上,更佳為3質量%以上,進而較佳為4質量%以上,進而更佳為6質量%以上。更具體而言,本發明之洗淨劑組合物之使用時之來自成分A、成分B、成分C及任意成分(成分D、成分E、成分F、其他成分)的有機物之總含量較佳為2質量%以上30質量%以下,更佳為3質量%以上25質量%以下,進而較佳為4質量%以上20質量%以下,進而更佳為6質量%以上16質量%以下。When the detergent composition of the present invention is used, the total content of organic substances derived from component A, component B and optional components (component D, component E, component F, and other components) reduces the waste water treatment load and reduces the load on the substrate. From the viewpoint of influence, it is preferably 30 mass % or less, more preferably 25 mass % or less, more preferably 20 mass % or less, and still more preferably 16 mass % or less, and in terms of improving the removability of the resin mask. From a viewpoint, 2 mass % or more is preferable, 3 mass % or more is more preferable, 4 mass % or more is still more preferable, and 6 mass % or more is more preferable. More specifically, the total content of organic substances derived from component A, component B, component C and optional components (component D, component E, component F, other components) when the detergent composition of the present invention is used is preferably 2 mass % or more and 30 mass % or less, more preferably 3 mass % or more and 25 mass % or less, more preferably 4 mass % or more and 20 mass % or less, still more preferably 6 mass % or more and 16 mass % or less.

[洗淨劑組合物之製造方法] 本發明之洗淨劑組合物可藉由將成分A、成分B、成分C及視需要之上述任意成分(成分D、成分E、成分F、其他成分)以公知之方法進行調配而製造。例如,本發明之洗淨劑組合物於一個或複數個實施方式中,可為將至少成分A、成分B及成分C進行調配而成者。 因此,本發明係關於一種洗淨劑組合物之製造方法,其包括至少將成分A、成分B及成分C進行調配之步驟。於本發明中,「調配」包括將成分A、成分B、成分C及視需要之上述任意成分(成分D、成分E、成分F、其他成分)同時或以任意之順序混合。於本發明之洗淨劑組合物之製造方法中,各成分之較佳調配量可設為與上述本發明之洗淨劑組合物之各成分之較佳含量相同。 [Manufacturing method of detergent composition] The detergent composition of the present invention can be produced by preparing the component A, component B, component C, and optionally the above-mentioned optional components (component D, component E, component F, and other components) by a known method. For example, in one or a plurality of embodiments, the detergent composition of the present invention may be prepared by blending at least Component A, Component B, and Component C. Therefore, the present invention relates to a method for producing a detergent composition, which includes at least the step of preparing the component A, the component B, and the component C. In the present invention, "mixing" includes mixing Component A, Component B, Component C, and optionally the above-mentioned optional components (Component D, Component E, Component F, and other components) at the same time or in any order. In the manufacturing method of the detergent composition of the present invention, the preferable compounding amount of each component can be set to be the same as the preferable content of each component of the above-mentioned detergent composition of the present invention.

本發明之洗淨劑組合物可為直接用於洗淨之形態,亦可製備為在不會引起分離或析出等而損害保管穩定性之範圍內減少了水(成分C)之量之濃縮物。洗淨劑組合物之濃縮物就運輸及儲存之觀點而言,較佳為製成稀釋倍率3倍以上之濃縮物,就保管穩定性之觀點而言,較佳為製成稀釋倍率30倍以下之濃縮物。洗淨劑組合物之濃縮物可於使用時藉由水(成分C)以各成分(成分A、成分B、成分C、成分D、成分E、成分F、及其他成分)變成上述含量(即,洗淨時之含量)之方式進行稀釋而使用。進而,洗淨劑組合物之濃縮物亦可於使用時分別添加各成分而使用。於本發明中,濃縮液之洗淨劑組合物之「使用時」或「洗淨時」係指洗淨劑組合物之濃縮物被稀釋之狀態。The detergent composition of the present invention may be directly used for cleaning, or may be prepared as a concentrate in which the amount of water (ingredient C) is reduced within a range where separation or precipitation does not impair storage stability. . From the viewpoint of transportation and storage, the concentrate of the detergent composition is preferably made into a concentrate with a dilution ratio of 3 times or more, and from the viewpoint of storage stability, it is preferably made into a dilution ratio of 30 times or less. of the concentrate. The concentrate of the detergent composition can be used by water (ingredient C) with each ingredient (ingredient A, ingredient B, ingredient C, ingredient D, ingredient E, ingredient F, and other ingredients) into the above-mentioned content (ie, ingredient C). , the content when washing) is diluted and used. Furthermore, the concentrate of a detergent composition can also be used by adding each component separately at the time of use. In the present invention, "at the time of use" or "at the time of washing" of the detergent composition of the concentrate refers to a state in which the concentrate of the detergent composition is diluted.

[被洗淨物] 被洗淨物於一個或複數個實施方式中係表面具有含銅金屬層及樹脂遮罩之基板。作為上述基板,例如可例舉絕緣體之板或膜等。因此,本發明之洗淨劑組合物於一個或複數個實施方式中,可用於洗淨表面具有含銅金屬層及樹脂遮罩之基板。 含銅金屬層於一個或複數個實施方式中係鍍銅層。鍍銅層例如可藉由無電解鍍銅法而形成。含銅金屬層於一個或複數個實施方式中用作金屬配線。 表面具有含銅金屬層及樹脂遮罩之基板於一個或複數個實施方式中經過了進行使用樹脂遮罩之焊接及鍍覆處理之至少一種處理的步驟。 上述基板於一個或複數個實施方式中,具有厚度為15 μm以上之含銅金屬層或含錫金屬層。厚度為15 μm以上之含銅金屬層或含錫金屬層之厚度就電特性及製造性之觀點而言,較佳為15 μm以上85 μm以下,更佳為20 μm以上80 μm以下,進而較佳為30 μm以上70 μm以下。厚度為15 μm以上之含銅金屬層或含錫金屬層於一個或複數個實施方式中用作金屬配線或配線連接部。 [to be washed] In one or more embodiments, the object to be cleaned is a substrate with a copper-containing metal layer and a resin mask on the surface. As said board|substrate, the board of an insulator, a film, etc. are mentioned, for example. Therefore, in one or more embodiments, the detergent composition of the present invention can be used to clean a substrate having a copper-containing metal layer and a resin mask on the surface. The copper-containing metal layer is, in one or more embodiments, a copper-plated layer. The copper plating layer can be formed by, for example, an electroless copper plating method. The copper-containing metal layer is used as metal wiring in one or more embodiments. In one or more embodiments, the substrate having the copper-containing metal layer and the resin mask on the surface undergoes the step of at least one of soldering and plating using the resin mask. In one or more embodiments, the above-mentioned substrate has a copper-containing metal layer or a tin-containing metal layer with a thickness of 15 μm or more. The thickness of the copper-containing metal layer or the tin-containing metal layer having a thickness of 15 μm or more is preferably 15 μm or more and 85 μm or less, more preferably 20 μm or more and 80 μm or less, from the viewpoint of electrical properties and manufacturability, and more preferably Preferably, it is 30 μm or more and 70 μm or less. A copper-containing metal layer or a tin-containing metal layer having a thickness of 15 μm or more is used as a metal wiring or a wiring connection in one or more embodiments.

被洗淨物於一個或複數個實施方式中係附著有樹脂遮罩之被洗淨物。因此,本發明之洗淨劑組合物於一個或複數個實施方式中可用於洗淨附著有樹脂遮罩之被洗淨物。 作為附著有樹脂遮罩之被洗淨物,於一個或複數個實施方式中,可例舉表面具有含銅金屬部位及樹脂遮罩之電子零件、及其製造中間物。作為電子零件,例如可例舉選自印刷基板、晶圓、及銅板與鋁板等金屬板之至少1個零件。上述製造中間物係電子零件之製造步驟之中間製造物,包括樹脂遮罩處理後之中間製造物。 作為附著有樹脂遮罩之被洗淨物之具體例,例如可例舉如下電子零件等,其藉由經過進行使用樹脂遮罩之焊接及鍍覆處理(鍍銅、鍍鋁、鍍鎳、鍍錫等)之至少一種處理的步驟,從而於基板表面形成了配線或連接端子等。於本發明中,焊接係指使焊料存在於基板上之樹脂遮罩不存在部,藉由加熱而形成焊料凸塊。於本發明中,鍍覆處理係指於基板上之樹脂遮罩不存在部進行選自鍍銅、鍍鋁、鍍鎳及鍍錫之至少1種鍍覆處理。樹脂遮罩不存在部係指於藉由對層壓至基板上之樹脂遮罩進行顯影處理而形成之抗蝕劑圖案(圖案形狀之樹脂遮罩)中,藉由顯影處理去除了樹脂遮罩之部分。因此,本發明於一態樣中係關於一種本發明之洗淨劑組合物之用途,係用作電子零件之製造中之洗淨劑。 In one or more embodiments, the object to be cleaned is an object to be cleaned to which a resin mask is attached. Therefore, in one or more embodiments, the detergent composition of the present invention can be used for cleaning the object to be cleaned to which the resin mask is attached. As the object to be cleaned to which the resin mask is attached, in one or more embodiments, an electronic component having a copper-containing metal portion and a resin mask on the surface, and an intermediate product thereof can be exemplified. As an electronic component, at least 1 component chosen from metal plates, such as a printed circuit board, a wafer, and a copper plate and an aluminum plate, is mentioned, for example. The above-mentioned manufacturing intermediate is an intermediate manufactured in the manufacturing steps of electronic parts, including the intermediate manufactured after resin mask treatment. As a specific example of the object to be cleaned to which the resin mask is attached, for example, electronic parts, etc., which are processed by welding and plating (copper plating, aluminum plating, nickel plating, A step of at least one treatment of tin, etc.), thereby forming wirings or connecting terminals, etc. on the surface of the substrate. In the present invention, soldering refers to the formation of solder bumps by heating the solder in the resin mask-free portion on the substrate. In the present invention, the plating treatment means that at least one kind of plating treatment selected from copper plating, aluminum plating, nickel plating and tin plating is performed on the resin mask-free portion on the substrate. The resin mask-absent portion means that in the resist pattern (pattern-shaped resin mask) formed by subjecting the resin mask laminated to the substrate to the development process, the resin mask is removed by the development process part of. Accordingly, the present invention in one aspect relates to the use of a detergent composition of the present invention as a detergent in the manufacture of electronic parts.

被洗淨物於一個或複數個實施方式中,經過了對具有藉由對層壓至基板上之樹脂遮罩進行顯影處理而形成之抗蝕劑圖案(圖案形狀之樹脂遮罩)之基板進行焊接及鍍覆處理之至少一種處理的步驟。例如作為被洗淨物,可例舉如下基板,其具有作為基板上形成有經硬化之抗蝕層之樹脂遮罩存在部之部位、及於樹脂遮罩不存在部形成有焊料凸塊或鍍覆層之部位。In one or more embodiments, the object to be cleaned is subjected to a substrate having a resist pattern (pattern-shaped resin mask) formed by developing a resin mask laminated to the substrate. Steps of at least one of soldering and plating treatments. For example, as the object to be cleaned, there may be mentioned a substrate having a portion as a resin mask existing portion formed with a hardened resist layer on the substrate, and a solder bump or plated portion formed on the resin mask nonexistent portion. The part of the coating.

被洗淨物於一個或複數個實施方式中係具有存在於微細間隙之樹脂遮罩之基板。於本發明中,間隙於一個或複數個實施方式中係指圖案間之距離(相鄰配線彼此之間隔),亦稱作空間(S)。又,圖案(配線)之寬度亦稱作線(L)。存在於微細間隙之樹脂遮罩於一個或複數個實施方式中係指存在於空間寬度為10 μm以下之空間之樹脂遮罩。作為存在於微細間隙之樹脂遮罩,例如可例舉存在於空間寬度為4~7 μm之空間之樹脂遮罩。In one or more embodiments, the object to be cleaned is a substrate having a resin mask existing in a fine gap. In the present invention, the gap refers to the distance between patterns (the distance between adjacent wirings) in one or more embodiments, and is also referred to as space (S). Moreover, the width|variety of a pattern (wiring) is also called a line (L). In one or more embodiments, the resin mask existing in the fine gap refers to the resin mask existing in a space with a space width of 10 μm or less. As a resin mask which exists in a fine gap, the resin mask which exists in the space whose space width is 4-7 micrometers is mentioned, for example.

本發明之洗淨劑組合物於一個或複數個實施方式中,就洗淨效果之觀點而言,可良好地用於洗淨附著有樹脂遮罩、或進而經鍍覆處理及/或加熱處理之樹脂遮罩之被洗淨物。作為樹脂遮罩,例如可為負型樹脂遮罩,亦可為正型樹脂遮罩。於本發明中,所謂負型樹脂遮罩係指使用負型抗蝕劑而形成者,例如可例舉經曝光及/或顯影處理之負型抗蝕層。於本發明中,正型樹脂遮罩係指使用正型抗蝕劑而形成者,例如可例舉經曝光及/或顯影處理之正型抗蝕層。In one or a plurality of embodiments, the detergent composition of the present invention can be favorably used for cleaning a resin mask attached, or further subjected to a plating treatment and/or a heat treatment from the viewpoint of the cleaning effect. The object to be cleaned of the resin cover. The resin mask may be, for example, a negative resin mask or a positive resin mask. In the present invention, the so-called negative-type resin mask refers to what is formed using a negative-type resist, for example, a negative-type resist layer that has been exposed and/or developed. In the present invention, the positive-type resin mask refers to what is formed using a positive-type resist, for example, a positive-type resist layer that has been exposed and/or developed.

[洗淨方法] 本發明之洗淨方法於一個或複數個實施方式中,包括如下步驟(以下亦簡稱為「剝離步驟」):使用本發明之洗淨劑組合物,從表面具有含銅金屬層及樹脂遮罩之基板(被洗淨物)剝離樹脂遮罩。上述剝離步驟於一個或複數個實施方式中,包括使被洗淨物與本發明之洗淨劑組合物接觸。上述剝離步驟於一個或複數個實施方式中,包括去除存在於微細間隙之樹脂遮罩。存在於微細間隙之樹脂遮罩如上所述,係存在於空間寬度為10 μm以下之空間之樹脂遮罩。根據本發明之洗淨方法,能夠不大幅損害樹脂遮罩去除性(剝離性)、且不使洗淨後之基板上之殘留物大幅增加而抑制銅腐蝕。 [Washing method] In one or more embodiments, the cleaning method of the present invention includes the following steps (hereinafter also referred to as "peeling step"): using the cleaning composition of the present invention to have a copper-containing metal layer and a resin mask from the surface The substrate (object to be cleaned) peels off the resin mask. In one or more embodiments, the above-mentioned peeling step includes contacting the object to be cleaned with the cleaning composition of the present invention. In one or more embodiments, the above-mentioned peeling step includes removing the resin mask existing in the fine gap. The resin mask existing in the fine gap is, as described above, a resin mask existing in a space with a space width of 10 μm or less. According to the cleaning method of the present invention, copper corrosion can be suppressed without significantly impairing the removability (peelability) of the resin mask, and without significantly increasing the residue on the substrate after cleaning.

作為使用本發明之洗淨劑組合物從被洗淨物剝離樹脂遮罩之方法、或使被洗淨物與本發明之洗淨劑組合物接觸之方法,例如可例舉:藉由浸漬至裝有洗淨劑組合物之洗淨浴槽內從而接觸之方法、將洗淨劑組合物以噴霧狀射出從而接觸之方法(噴淋方式)、於浸漬過程中照射超音波之超音波洗淨方法等。本發明之洗淨劑組合物可不進行稀釋而直接用於洗淨。作為被洗淨物,可例舉上述之被洗淨物。As a method of peeling off the resin mask from the object to be cleaned using the detergent composition of the present invention, or a method of contacting the object to be cleaned with the detergent composition of the present invention, for example, by dipping to The method of contacting in a cleaning bath containing the detergent composition, the method of contacting by spraying the detergent composition in the form of a spray (spray method), and the ultrasonic cleaning method of irradiating ultrasonic waves during immersion Wait. The detergent composition of the present invention can be directly used for cleaning without dilution. As the object to be washed, the aforementioned object to be washed can be exemplified.

本發明之洗淨方法於一個或複數個實施方式中,可包括使洗淨劑組合物與被洗淨物接觸後用水清洗並進行乾燥之步驟。本發明之洗淨方法於一個或複數個實施方式中,可包括使洗淨劑組合物與被洗淨物接觸後用水沖洗之步驟。In one or more embodiments, the cleaning method of the present invention may include the steps of contacting the cleaning composition with the object to be cleaned, followed by washing with water and drying. In one or more embodiments, the cleaning method of the present invention may include the step of rinsing with water after contacting the cleaning composition with the object to be cleaned.

本發明之洗淨方法就易於發揮本發明之洗淨劑組合物之洗淨力之觀點而言,較佳為於本發明之洗淨劑組合物與被洗淨物之接觸時照射超音波,更佳為該超音波為較高頻率。上述超音波之照射條件就相同之觀點而言,例如較佳為26~72 kHz、80~1500 W,更佳為36~72 kHz、80~1500 W。In the cleaning method of the present invention, from the viewpoint of easily exerting the cleaning power of the detergent composition of the present invention, it is preferable to irradiate ultrasonic waves when the detergent composition of the present invention is in contact with the object to be cleaned, More preferably, the ultrasound is of a higher frequency. From the same viewpoint, the irradiation conditions of the above-mentioned ultrasonic waves are, for example, preferably 26 to 72 kHz and 80 to 1500 W, and more preferably 36 to 72 kHz and 80 to 1500 W.

於本發明之洗淨方法中,就易於發揮本發明之洗淨劑組合物之洗淨力之觀點而言,洗淨劑組合物之溫度較佳為40℃以上,更佳為50℃以上,並且,就降低對基板之影響之觀點而言,較佳為70℃以下,更佳為60℃以下。In the cleaning method of the present invention, the temperature of the detergent composition is preferably 40°C or higher, more preferably 50°C or higher, from the viewpoint of easily exerting the cleaning power of the detergent composition of the present invention. Moreover, from a viewpoint of reducing the influence on a board|substrate, 70 degrees C or less is preferable, and 60 degrees C or less is more preferable.

[電子零件之製造方法] 本發明於一態樣中,係關於一種電子零件之製造方法(以下亦稱為「本發明之電子零件之製造方法」),其包括使用本發明之洗淨方法,將表面具有含銅金屬層及樹脂遮罩之基板(被洗淨物)洗淨之步驟(洗淨步驟)。作為被洗淨物,可例舉上述被洗淨物。本發明之電子零件之製造方法於一個或複數個實施方式中,可包括於上述洗淨步驟之前,對選自印刷基板、晶圓、及金屬板之至少1種電子零件進行使用樹脂遮罩之焊接及鍍覆處理之至少一種處理的步驟。本發明之電子零件之製造方法於一個或複數個實施方式中,可包括於上述洗淨步驟之後對含銅金屬層進行蝕刻之步驟。 本發明之電子零件之製造方法藉由使用本發明之洗淨方法進行洗淨,能夠不大幅損害樹脂遮罩去除性(剝離性)、且不使洗淨後之基板上之殘留物大幅增加而抑制銅腐蝕,故能夠製造可靠性較高之電子零件。進而,藉由進行本發明之洗淨方法,容易去除附著於電子零件之樹脂遮罩,故能夠縮短洗淨時間,能夠提高電子零件之製造效率。 [Manufacturing method of electronic parts] In one aspect, the present invention relates to a method for manufacturing an electronic component (hereinafter also referred to as "the method for manufacturing an electronic component of the present invention"), which comprises using the cleaning method of the present invention to provide a surface with a copper-containing metal layer and the step of cleaning the substrate (object to be cleaned) of the resin mask (cleaning step). As the object to be washed, the above-mentioned object to be washed may, for example, be mentioned. In one or more embodiments, the method for manufacturing an electronic component of the present invention may include, prior to the cleaning step, at least one electronic component selected from a printed circuit board, a wafer, and a metal plate using a resin mask. Steps of at least one of soldering and plating treatments. In one or more embodiments, the method for manufacturing an electronic component of the present invention may include a step of etching the copper-containing metal layer after the cleaning step. The manufacturing method of the electronic component of the present invention can be cleaned by using the cleaning method of the present invention, without greatly impairing the removability (peelability) of the resin mask, and without greatly increasing the residue on the substrate after cleaning. Corrosion of copper is inhibited, so it is possible to manufacture electronic parts with high reliability. Furthermore, by carrying out the cleaning method of the present invention, the resin mask adhering to the electronic component can be easily removed, so that the cleaning time can be shortened, and the manufacturing efficiency of the electronic component can be improved.

[套組] 本發明於一態樣中,係關於一種套組(以下亦稱為「本發明之套組」),其用於本發明之洗淨方法及本發明之電子零件之製造方法之任一者。本發明之套組於一個或複數個實施方式中,係用以製造本發明之洗淨劑組合物之套組。根據本發明之套組,可獲得能夠不大幅損害樹脂遮罩去除性(剝離性)、且不使洗淨後之基板上之殘留物大幅增加而抑制銅腐蝕之洗淨劑組合物。 [set] In one aspect, the present invention relates to a kit (hereinafter also referred to as "the kit of the present invention") for use in any one of the cleaning method of the present invention and the manufacturing method of an electronic component of the present invention. The kit of the present invention, in one or more embodiments, is a kit for making the detergent composition of the present invention. According to the kit of the present invention, it is possible to obtain a cleaning composition capable of suppressing copper corrosion without significantly impairing the removability (peelability) of the resin mask and without significantly increasing the residue on the substrate after cleaning.

作為本發明之套組之一實施方式,可例舉如下套組(2液型洗淨劑組合物),其以相互不混合之狀態包含含有成分A之溶液(第1液)及含有成分B之溶液(第2液),第1液及第2液之至少一者進而含有水(成分C)之一部分或全部,且第1液與第2液係於使用時混合。第1液與第2液混合後,亦可視需要用水(成分C)進行稀釋。第1液及第2液各自亦可視需要含有上述任意成分。 實施例 As one embodiment of the kit of the present invention, a kit (two-component detergent composition) comprising a solution containing component A (first solution) and component B in a state that they are not mixed with each other can be exemplified The solution (second liquid), at least one of the first liquid and the second liquid further contains a part or all of water (component C), and the first liquid and the second liquid are mixed at the time of use. After mixing the 1st liquid and the 2nd liquid, you may dilute with water (component C) as needed. Each of the first liquid and the second liquid may contain any of the above-mentioned components as necessary. Example

以下,根據實施例對本發明具體地進行說明,但本發明不受該等實施例任何限定。Hereinafter, the present invention will be specifically described based on examples, but the present invention is not limited by these examples at all.

1.實施例1~13、比較例1及參考例1~2之洗淨劑組合物之製備 藉由按表1記載之調配量(質量%、有效部分)將表1所示之各成分進行調配,並進行攪拌、混合,從而製備實施例1~13、比較例1及參考例1~2之洗淨劑組合物。 1. Preparation of detergent compositions of Examples 1 to 13, Comparative Example 1 and Reference Examples 1 to 2 Examples 1 to 13, Comparative Example 1, and Reference Examples 1 to 2 were prepared by blending, stirring and mixing the components shown in Table 1 according to the blending amounts (mass %, effective fraction) described in Table 1. detergent composition.

實施例1~13、比較例1及參考例1~2之洗淨劑組合物之製備係使用下述成分。 (成分A) TMAH:四甲基銨氫氧化物[昭和電工股份有限公司製造,濃度25%] MEA:單乙醇胺[日本觸媒股份有限公司製造] (成分B) 抗壞血酸[富士膠片和光純藥股份有限公司] HOPO:2-羥基吡啶-N-氧化物[蘇州昊帆生物股份有限公司製造] (成分C) 水[由Organo股份有限公司製造之純水裝置G-10DSTSET所製造之1 μS/cm以下之純水] (成分D) BDG:二乙二醇丁醚[日本乳化劑股份有限公司製造,二乙二醇單丁醚] (成分E) HEDP:依替膦酸[Italmatch Japan股份有限公司製造,Dequest2010,濃度60%] (成分F) 甲酸銨[富山藥品工業股份有限公司製造] (其他成分) 苯并三唑[Mitsui Fine Chemicals股份有限公司](覆膜型蝕刻抑制劑) 硫代乙醯胺[富士膠片和光純藥股份有限公司](覆膜型蝕刻抑制劑) The following components were used for the preparation of the detergent compositions of Examples 1 to 13, Comparative Example 1 and Reference Examples 1 to 2. (ingredient A) TMAH: Tetramethylammonium hydroxide [manufactured by Showa Denko Co., Ltd., concentration 25%] MEA: Monoethanolamine [manufactured by Nippon Shokubai Co., Ltd.] (ingredient B) Ascorbic acid [Fujifilm Wako Pure Chemical Industries Ltd.] HOPO: 2-hydroxypyridine-N-oxide [manufactured by Suzhou Haofan Biological Co., Ltd.] (ingredient C) Water [Pure water below 1 μS/cm produced by Organo Co., Ltd. Purified Water Device G-10DSTSET] (ingredient D) BDG: Diethylene glycol butyl ether [manufactured by Nippon Emulsifier Co., Ltd., diethylene glycol monobutyl ether] (ingredient E) HEDP: etidronic acid [manufactured by Italmatch Japan Co., Ltd., Dequest2010, concentration 60%] (ingredient F) Ammonium formate [manufactured by Toyama Pharmaceutical Co., Ltd.] (other ingredients) Benzotriazole [Mitsui Fine Chemicals Co., Ltd.] (coating type etching inhibitor) Thioacetamide [Fujifilm Wako Pure Chemical Industries, Ltd.] (coated etching inhibitor)

2.洗淨劑組合物之評估 對所製備之施例1~13、比較例1及參考例1~2之洗淨劑組合物進行下述評估。 2. Evaluation of detergent compositions The following evaluations were performed on the prepared detergent compositions of Examples 1 to 13, Comparative Example 1, and Reference Examples 1 to 2.

[試片I之製作] 對無電解鍍覆後之基板表面於下述條件下層壓PKG(半導體封裝)基板電路形成用感光性膜,選擇性地進行曝光處理從而使曝光部硬化後(曝光步驟),藉由顯影處理去除未曝光部(顯影步驟),獲得具有抗蝕劑圖案(圖案形狀之負型樹脂遮罩)之基板。並且,對利用上述顯影處理去除了未曝光部之區域進行鍍銅處理(厚度10 μm),藉此獲得包含表面具有含銅金屬層(銅配線)及經硬化之抗蝕層即樹脂遮罩之基板的試片I(50 mm×50 mm)。 (1)層壓:使用清潔輥(RAYON INDUSTRIAL股份有限公司製造,RY-505Z)及真空敷料器(羅門哈斯公司製造,VA7024/HP5),於輥溫度50℃、輥壓力1.4 Bar下進行。 (2)曝光:使用印刷基板用直接描繪裝置(SCREEN Graphic and Precision Solutions股份有限公司製造,Mercurex LI-9500),於曝光量15 mJ/cm 2下進行曝光。 (3)圖案形狀:L/S=5 μm/5 μm、6 μm/6 μm、7 μm/7 μm之條狀圖案。再者,L/S表示:表示圖案(銅配線)之寬度之線(L)與表示相鄰圖案間之距離(絕緣部之寬度)之空間(S)。 (4)顯影:使用基板用顯影裝置(揚博科技股份有限公司製造,LT-980366)、30℃之1%碳酸鈉水溶液,於噴霧壓力0.2 MPa下,去除未曝光部之樹脂遮罩。 [Preparation of Test Piece I] A photosensitive film for forming a PKG (semiconductor package) substrate circuit was laminated on the surface of the substrate after electroless plating under the following conditions, and the exposed portion was selectively cured by exposure treatment (exposure step ), the unexposed portion is removed by developing treatment (developing step) to obtain a substrate with a resist pattern (negative resin mask in the shape of a pattern). Furthermore, copper plating (thickness 10 μm) was performed on the region where the unexposed portion was removed by the above-mentioned development treatment, thereby obtaining a resin mask comprising a copper-containing metal layer (copper wiring) and a hardened resist layer on the surface. Test piece I of the substrate (50 mm × 50 mm). (1) Lamination: using a cleaning roller (manufactured by RAYON INDUSTRIAL Co., Ltd., RY-505Z) and a vacuum applicator (manufactured by Rohm and Haas, VA7024/HP5), at a roller temperature of 50° C. and a roller pressure of 1.4 Bar. (2) Exposure: Using a direct drawing device for printed circuit boards (manufactured by SCREEN Graphic and Precision Solutions Co., Ltd., Mercurex LI-9500), exposure was performed at an exposure amount of 15 mJ/cm 2 . (3) Pattern shape: L/S=5 μm/5 μm, 6 μm/6 μm, 7 μm/7 μm stripe pattern. In addition, L/S shows: the line (L) which shows the width|variety of a pattern (copper wiring), and the space (S) which shows the distance (width of an insulating part) between adjacent patterns. (4) Development: Using a substrate developing device (manufactured by Yangbo Technology Co., Ltd., LT-980366), a 1% sodium carbonate aqueous solution at 30°C, and a spray pressure of 0.2 MPa, the resin mask of the unexposed part was removed.

[洗淨試驗] 使用各洗淨劑組合物洗淨試片I,從基板剝離樹脂遮罩。 於5 L不鏽鋼燒杯中添加3 kg洗淨劑組合物,加溫至50℃,於安裝有單流體噴嘴(密實錐形)J020(H.IKEUCHI股份有限公司製造)作為噴霧噴嘴之箱式噴霧洗淨機中一面循環,一面對試片I進行噴霧(壓力:0.1 MPa、噴霧距離:8 cm)1分鐘(剝離步驟或洗淨步驟)。然後,浸漬至1 L玻璃燒杯中添加有1 kg水之沖洗槽中沖洗後,用氮氣吹乾。 [Cleaning test] The test piece I was washed with each detergent composition, and the resin mask was peeled off from the substrate. Add 3 kg of detergent composition to a 5 L stainless steel beaker, heat it to 50°C, and use a box-type spray washing machine equipped with a single-fluid nozzle (dense cone) J020 (manufactured by H.IKEUCHI Co., Ltd.) as a spray nozzle. While circulating in the cleaning machine, the test piece I was sprayed (pressure: 0.1 MPa, spray distance: 8 cm) for 1 minute (peeling step or washing step). Then, it was immersed in a 1 L glass beaker in a rinse tank in which 1 kg of water was added, rinsed, and then blown dry with nitrogen.

[樹脂遮罩之剝離性I之評估] 使用光學顯微鏡「數位顯微鏡VHX-6000」(基恩士股份有限公司製造),放大500倍並目視確認進行了上述洗淨試驗後之試片I之圖案部中有無殘存之樹脂遮罩,以下述標準進行評估。將結果示於表1中。 <評估標準> A:於5 μm/5 μm下亦未發現殘渣 B:直至6 μm/6 μm未發現殘渣 C:直至7 μm/7 μm未發現殘渣 D:於7 μm/7 μm下仍能發現殘渣 [Evaluation of Removability I of Resin Mask] Using an optical microscope "Digital Microscope VHX-6000" (manufactured by Keyence Corporation), magnify 500 times and visually confirm whether there is any residual resin mask in the pattern portion of the test piece I after the above cleaning test. standard for evaluation. The results are shown in Table 1. <Evaluation Criteria> A: No residue was found even at 5 μm/5 μm B: No residue found up to 6 μm/6 μm C: No residue found up to 7 μm/7 μm D: Residue can still be found at 7 μm/7 μm

[Cu蝕刻速率之評估(銅之腐蝕之評估)] 將各洗淨劑組合物調整為2.5 L,加溫至50℃,於安裝有密實錐形噴嘴(H.IKEUCHI股份有限公司製造,J020)作為噴霧噴嘴之箱式噴霧洗淨機中一面循環,一面對表面實施了鍍銅(面積為每單面25 cm 2、兩面50 cm 2)之試片I進行噴霧(壓力:0.05 MPa、噴霧距離:80 mm)4分鐘。將洗淨劑組合物稀釋後,利用ICP(Inductively coupled plasma,感應耦合電漿)分析法(Agilent Technologies製造,Agilent5110 ICP-OES)測定銅之溶出量,藉由下述式,將銅之密度設為8.94 g/cm 3,根據溶出量評估Cu蝕刻速率(μm/min)。將結果示於表1中。Cu蝕刻速率之數值越低,可判斷銅腐蝕抑制效果越優異。 Cu蝕刻速率(μm/min)=銅之溶出量(重量)÷銅之密度÷鍍覆面積÷處理時間 [Evaluation of Cu etching rate (Evaluation of copper corrosion)] Each detergent composition was adjusted to 2.5 L, heated to 50°C, and installed with a dense cone nozzle (manufactured by H.IKEUCHI Co., Ltd., J020) In the box-type spray cleaning machine used as a spray nozzle, one side was circulated, and the other side was sprayed on the test piece I whose surface was copper-plated (25 cm 2 per one side, 50 cm 2 on both sides) (pressure: 0.05 MPa, spraying Distance: 80 mm) 4 minutes. After diluting the detergent composition, the eluted amount of copper was measured by ICP (Inductively coupled plasma) analysis (manufactured by Agilent Technologies, Agilent5110 ICP-OES). The density of copper was set by the following formula. It was 8.94 g/cm 3 , and the Cu etching rate (μm/min) was evaluated according to the dissolution amount. The results are shown in Table 1. The lower the numerical value of the Cu etching rate, the more excellent the copper corrosion inhibition effect can be judged. Cu etching rate (μm/min) = copper dissolution amount (weight) ÷ copper density ÷ plating area ÷ treatment time

[成分之殘留性] 利用X射線光電子光譜法對進行了上述洗淨試驗之基板樣品之鍍銅部分進行分析,基於碳原子、氧原子、氮原子、硫原子之訊號強度,依據下述標準對殘留性進行評估。將結果示於表1中。若檢測出碳原子、氧原子、氮原子及硫原子之明顯訊號,則判斷來自洗淨劑組合物之成分殘留於洗淨後之基板上。 <評估標準> A:未檢測出訊號,或僅檢測出微弱訊號 B:檢測出明顯訊號 [Residual properties of ingredients] The copper-plated portion of the substrate sample subjected to the above-mentioned cleaning test was analyzed by X-ray photoelectron spectroscopy, and the residue was evaluated according to the following criteria based on the signal intensities of carbon atoms, oxygen atoms, nitrogen atoms, and sulfur atoms. The results are shown in Table 1. If obvious signals of carbon atoms, oxygen atoms, nitrogen atoms, and sulfur atoms are detected, it is determined that components derived from the detergent composition remain on the cleaned substrate. <Evaluation Criteria> A: No signal detected, or only weak signal detected B: Obvious signal detected

[穩定性] 目視觀察上述洗淨試驗之前後之洗淨劑組合物之外觀的顏色或濁度之變化,以下述標準進行評估。將結果示於表1中。 <評估標準> A:洗淨試驗之前後未發現變化 B:洗淨試驗之前後發現變化 [stability] The change in color or turbidity of the appearance of the detergent composition before and after the above-mentioned cleaning test was visually observed, and evaluated according to the following criteria. The results are shown in Table 1. <Evaluation Criteria> A: No change was found before and after the cleaning test B: Changes were found before and after the cleaning test

[表1] 表1 比較例 實施例 參考例 1 1 2 3 4 5 6 7 8 9 10 11 12 13 1 2   調配量(質量%) 成分A TMAH 4.0 4.0 4.0 4.0 1.0 7.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0   MEA 6.0 6.0 2.0 8.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0   成分B 抗壞血酸 0.5 0.5 0.5 0.5 0.5 0.2 1.0 0.5   HOPO 0.5 0.5 0.5 0.5 0.5   成分C 90.0 89.5 93.5 87.5 92.5 86.5 89.8 89.0 89.5 86.5 87.7 89.0 84.2 84.2 84.2 84.2   成分D BDG 3.0 3.0 3.0 3.0 3.0   成分E HEDP 1.8 1.8 1.8 1.8 1.8   成分F 甲酸銨 0.5 0.5 0.5 0.5 0.5   其他成分 苯并三唑 0.5   硫代乙醯胺 0.5   合計(質量%) 100.0 100.0 100.0 100.0 100.0 100.0 100.0 100.0 100.0 100.0 100.0 100.0 100.0 100.0 100.0 100.0   質量比A/B - 20 12 24 14 26 50 10 20 20 20 20 20 20 - -   剝離性I B B C B B B B B B B B B A A B B   腐蝕性:Cu蝕刻速率(µm/min) 0.05 0.02 0.02 0.03 0.03 0.02 0.03 0.02 0.02 0.02 0.02 0.02 0.02 0.02 0.02 0.00   成分之殘留性 A A A A A A A A A A A A A A B B   洗淨劑組合物之穩定性 A B B B B B B B A A A A A B A A   [Table 1] Table 1 Comparative example Example Reference example 1 1 2 3 4 5 6 7 8 9 10 11 12 13 1 2 Compounding amount (mass %) Ingredient A TMAH 4.0 4.0 4.0 4.0 1.0 7.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 MEA 6.0 6.0 2.0 8.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 Ingredient B ascorbic acid 0.5 0.5 0.5 0.5 0.5 0.2 1.0 0.5 HOPO 0.5 0.5 0.5 0.5 0.5 Ingredient C water 90.0 89.5 93.5 87.5 92.5 86.5 89.8 89.0 89.5 86.5 87.7 89.0 84.2 84.2 84.2 84.2 Ingredient D BDG 3.0 3.0 3.0 3.0 3.0 Ingredient E HEDP 1.8 1.8 1.8 1.8 1.8 Ingredient F Ammonium formate 0.5 0.5 0.5 0.5 0.5 other ingredients benzotriazole 0.5 Thioacetamide 0.5 Total (mass %) 100.0 100.0 100.0 100.0 100.0 100.0 100.0 100.0 100.0 100.0 100.0 100.0 100.0 100.0 100.0 100.0 Mass ratio A/B - 20 12 twenty four 14 26 50 10 20 20 20 20 20 20 - - peel I B B C B B B B B B B B B A A B B Corrosivity: Cu etch rate (µm/min) 0.05 0.02 0.02 0.03 0.03 0.02 0.03 0.02 0.02 0.02 0.02 0.02 0.02 0.02 0.02 0.00 Residue of ingredients A A A A A A A A A A A A A A B B Stability of detergent compositions A B B B B B B B A A A A A B A A

如表1所示,可知實施例1~13之洗淨劑組合物與不含成分B之比較例1及參考例1~2相比,能夠不大幅損害樹脂遮罩去除性、且不使洗淨後之基板上之殘留物大幅增加而抑制銅腐蝕。As shown in Table 1, it can be seen that the detergent compositions of Examples 1 to 13 can not significantly impair the removability of the resin mask as compared with Comparative Example 1 and Reference Examples 1 to 2 that do not contain Component B The residue on the cleaned substrate is greatly increased to inhibit copper corrosion.

對所製備之實施例1及比較例1之洗淨劑組合物進而進行下述評估。The prepared detergent compositions of Example 1 and Comparative Example 1 were further evaluated as follows.

[試片II] 對無電解鍍覆後之基板表面於下述條件下層壓PKG(半導體封裝)基板電路形成用感光性膜,選擇性地進行曝光處理從而使曝光部硬化後(曝光步驟),藉由顯影處理去除未曝光部(顯影步驟),獲得具有抗蝕劑圖案(圖案形狀之負型樹脂遮罩)之基板。並且,對利用上述顯影處理去除了未曝光部之區域進行鍍銅處理(厚度50 μm),藉此獲得包含表面具有含銅金屬層(銅配線)及經硬化之抗蝕層即樹脂遮罩之基板的試片II(50 mm×50 mm)。 (1)層壓:使用清潔輥(RAYON INDUSTRIAL股份有限公司製造,RY-505Z)及真空敷料器(羅門哈斯公司製造,VA7024/HP5),於輥溫度50℃、輥壓力1.4 Bar下進行。 (2)曝光:使用印刷基板用直接描繪裝置(SCREEN Graphic and Precision Solutions股份有限公司製造,Mercurex LI-9500),於曝光量15 mJ/cm 2下進行曝光。 (3)圖案形狀:L/S=20 μm/20 μm之條狀圖案。再者,L/S表示:表示圖案(銅配線)之寬度之線(L)與表示相鄰圖案間之距離(絕緣部之寬度)之空間(S)。 (4)顯影:使用基板用顯影裝置(揚博科技股份有限公司製造,LT-980366)、30℃之1%碳酸鈉水溶液,於噴霧壓力0.2 MPa下,去除未曝光部之樹脂遮罩。 [Test Piece II] The photosensitive film for forming a PKG (semiconductor package) board circuit was laminated on the surface of the substrate after electroless plating under the following conditions, and after selectively exposure treatment was performed to harden the exposed portion (exposure step), The unexposed portion is removed by developing treatment (developing step) to obtain a substrate having a resist pattern (negative resin mask of pattern shape). In addition, copper plating (50 μm in thickness) was performed on the region where the unexposed portion was removed by the above-mentioned development treatment, thereby obtaining a resin mask including a copper-containing metal layer (copper wiring) and a hardened resist layer on the surface. Test piece II of the substrate (50 mm x 50 mm). (1) Lamination: using a cleaning roller (manufactured by RAYON INDUSTRIAL Co., Ltd., RY-505Z) and a vacuum applicator (manufactured by Rohm and Haas, VA7024/HP5), at a roller temperature of 50° C. and a roller pressure of 1.4 Bar. (2) Exposure: Using a direct drawing device for printed circuit boards (manufactured by SCREEN Graphic and Precision Solutions Co., Ltd., Mercurex LI-9500), exposure was performed at an exposure amount of 15 mJ/cm 2 . (3) Pattern shape: stripe pattern with L/S=20 μm/20 μm. In addition, L/S shows: the line (L) which shows the width|variety of a pattern (copper wiring), and the space (S) which shows the distance (width of an insulating part) between adjacent patterns. (4) Development: Using a substrate developing device (manufactured by Yangbo Technology Co., Ltd., LT-980366), a 1% sodium carbonate aqueous solution at 30°C, and a spray pressure of 0.2 MPa, the resin mask of the unexposed part was removed.

[洗淨試驗] 使用各洗淨劑組合物洗淨試片II,從基板剝離樹脂遮罩。 於5 L不鏽鋼燒杯中添加3 kg洗淨劑組合物,加溫至50℃,於安裝有單流體噴嘴(密實錐形)J020(H.IKEUCHI股份有限公司製造)作為噴霧噴嘴之箱式噴霧洗淨機中一面循環,一面對試片II進行噴霧(壓力:0.1 MPa、噴霧距離:8 cm)10分鐘(剝離步驟或洗淨步驟)。然後,浸漬至1 L玻璃燒杯中添加有1 kg水之沖洗槽中沖洗後,用氮氣吹乾。 [Cleaning test] The test piece II was washed with each detergent composition, and the resin mask was peeled off from the substrate. Add 3 kg of detergent composition to a 5 L stainless steel beaker, heat it to 50°C, and use a box-type spray washing machine equipped with a single-fluid nozzle (dense cone) J020 (manufactured by H.IKEUCHI Co., Ltd.) as a spray nozzle. While circulating in the cleaning machine, the test piece II was sprayed (pressure: 0.1 MPa, spray distance: 8 cm) for 10 minutes (peeling step or washing step). Then, it was immersed in a 1 L glass beaker in a rinse tank in which 1 kg of water was added, rinsed, and then blown dry with nitrogen.

[樹脂遮罩之剝離性II之評估] 使用光學顯微鏡「數位顯微鏡VHX-6000」(基恩士股份有限公司製造),放大500倍並目視確認進行了上述洗淨試驗後之試片II之圖案部中有無殘存之樹脂遮罩,以下述標準進行評估。將結果示於表2中。 <評估標準> A:每1晶片之殘渣為2個以下 B:每1晶片之殘渣為3個以上9個以下 C:每1晶片之殘渣為10個以上20個以下 D:每1晶片之殘渣為21個以上 [Evaluation of Removability II of Resin Mask] Using an optical microscope "Digital Microscope VHX-6000" (manufactured by Keyence Corporation), magnify 500 times and visually confirm whether there is any residual resin mask in the pattern portion of the test piece II after the above cleaning test. standard for evaluation. The results are shown in Table 2. <Evaluation Criteria> A: The residue per chip is 2 or less B: The residue per wafer is 3 or more and 9 or less C: 10 or more and 20 or less residues per wafer D: 21 or more residues per wafer

[Cu蝕刻速率之評估(銅之腐蝕之評估)] 試片II之銅腐蝕之評估係與試片I之銅腐蝕之評估同樣地進行。將結果示於表2中。 [Evaluation of Cu etching rate (Evaluation of copper corrosion)] The evaluation of the copper corrosion of the test piece II was performed in the same manner as the evaluation of the copper corrosion of the test piece I. The results are shown in Table 2.

[表2] 表2 比較例 實施例 1 1 調配量(質量%) 成分A TMAH 4.0 4.0 MEA 6.0 6.0 成分B 抗壞血酸 0.5 成分C 90.0 89.5 合計(質量%) 100.0 100.0 質量比A/B - 20 剝離性II C A 腐蝕性:Cu蝕刻速率(µm/min) 0.05 0.02 [Table 2] Table 2 Comparative example Example 1 1 Compounding amount (mass %) Ingredient A TMAH 4.0 4.0 MEA 6.0 6.0 Ingredient B ascorbic acid 0.5 Ingredient C water 90.0 89.5 Total (mass %) 100.0 100.0 Mass ratio A/B - 20 Stripping II C A Corrosivity: Cu etch rate (µm/min) 0.05 0.02

如表2所示,可知實施例1之洗淨劑組合物與不含成分B之比較例1相比,能夠提高樹脂遮罩去除性,且能夠抑制銅腐蝕。 [產業上之可利用性] As shown in Table 2, it can be seen that the detergent composition of Example 1 can improve the resin mask removability and suppress copper corrosion as compared with Comparative Example 1 which does not contain component B. [Industrial Availability]

根據本發明,可提供一種洗淨方法,其能夠不大幅損害樹脂遮罩去除性(剝離性)、且不使洗淨後之基板上之殘留物大幅增加而抑制銅腐蝕。本發明之洗淨方法能夠縮短附著有樹脂遮罩之電子零件之洗淨步驟且能夠提高所製造之電子零件之性能、可靠性,能夠提高半導體裝置之生產性。According to the present invention, it is possible to provide a cleaning method capable of suppressing copper corrosion without significantly impairing the removability (peelability) of the resin mask and without significantly increasing the residue on the substrate after cleaning. The cleaning method of the present invention can shorten the cleaning steps of the electronic parts to which the resin mask is attached, and can improve the performance and reliability of the manufactured electronic parts, and can improve the productivity of the semiconductor device.

Figure 110132940-A0101-11-0001-2
Figure 110132940-A0101-11-0001-2

Claims (16)

一種基板之洗淨方法,其包括如下步驟:使用含有下述成分A、下述成分B及下述成分C之洗淨劑組合物,從表面具有含銅金屬層及樹脂遮罩之基板剝離樹脂遮罩; 成分A:下述式(I)所表示之四級銨氫氧化物及下述式(II)所表示之胺 成分B:還原劑 成分C:水 [化1]
Figure 03_image020
於上述式(I)中,R 1、R 2、R 3及R 4分別獨立為選自甲基、乙基、丙基、羥甲基、羥乙基及羥丙基之至少1種; [化2]
Figure 03_image022
於上述式(II)中,R 5表示選自氫原子、甲基、乙基及胺基乙基之至少1種,R 6表示選自氫原子、羥乙基、羥丙基、甲基及乙基之至少1種,R 7表示選自胺基乙基、羥乙基及羥丙基之至少1種。
A method for cleaning a substrate, comprising the steps of: using a detergent composition containing the following component A, the following component B and the following component C, peeling off resin from a substrate having a copper-containing metal layer and a resin mask on the surface Mask; Component A: quaternary ammonium hydroxide represented by the following formula (I) and amine represented by the following formula (II) Component B: reducing agent Component C: water
Figure 03_image020
In the above formula (I), R 1 , R 2 , R 3 and R 4 are each independently at least one selected from methyl, ethyl, propyl, hydroxymethyl, hydroxyethyl and hydroxypropyl; [ 2]
Figure 03_image022
In the above formula (II), R 5 represents at least one selected from a hydrogen atom, methyl, ethyl and aminoethyl, and R 6 represents a hydrogen atom, hydroxyethyl, hydroxypropyl, methyl and At least one kind of ethyl group, and R 7 represents at least one kind selected from aminoethyl group, hydroxyethyl group and hydroxypropyl group.
如請求項1之洗淨方法,其中含銅金屬層係鍍銅層。The cleaning method of claim 1, wherein the copper-containing metal layer is a copper-plated layer. 如請求項1之洗淨方法,其中樹脂遮罩係經硬化之抗蝕層。The cleaning method of claim 1, wherein the resin mask is a hardened resist layer. 如請求項1之洗淨方法,其中成分B係選自抗壞血酸及包含含氮雜芳環之至少1個氫原子被取代為羥基之含氮雜芳環的N-氧化物化合物之1種以上。The cleaning method according to claim 1, wherein the component B is one or more selected from ascorbic acid and N-oxide compounds containing nitrogen-containing heteroaromatic rings in which at least one hydrogen atom of the nitrogen-containing heteroaromatic ring is substituted with a hydroxyl group. 如請求項1之洗淨方法,其中成分B之含量為0.05質量%以上5質量%以下。The cleaning method of claim 1, wherein the content of component B is 0.05 mass % or more and 5 mass % or less. 如請求項1之洗淨方法,其中上述基板具有厚度為15 μm以上之含銅金屬層。The cleaning method of claim 1, wherein the substrate has a copper-containing metal layer with a thickness of 15 μm or more. 如請求項1之洗淨方法,其中剝離樹脂遮罩之步驟包括去除存在於微細間隙之樹脂遮罩。The cleaning method of claim 1, wherein the step of peeling off the resin mask includes removing the resin mask existing in the fine gaps. 如請求項1至7中任一項之洗淨方法,其中表面具有含銅金屬層及樹脂遮罩之基板經過了進行使用樹脂遮罩之焊接及鍍覆處理之至少一種處理的步驟。The cleaning method of any one of claims 1 to 7, wherein the substrate having the copper-containing metal layer and the resin mask on the surface is subjected to at least one of soldering and plating using the resin mask. 一種電子零件之製造方法,其包括如下步驟:使用如請求項1至8中任一項之洗淨方法,將表面具有含銅金屬層及樹脂遮罩之基板洗淨。A method for manufacturing an electronic component, comprising the steps of: using the cleaning method according to any one of claims 1 to 8, cleaning a substrate having a copper-containing metal layer and a resin mask on the surface. 一種樹脂遮罩剝離用洗淨劑組合物,其含有下述成分A、下述成分B及下述成分C: 成分A:下述式(I)所表示之四級銨氫氧化物及下述式(II)所表示之胺 成分B:還原劑 成分C:水 [化3]
Figure 03_image024
於上述式(I)中,R 1、R 2、R 3及R 4分別獨立為選自甲基、乙基、丙基、羥甲基、羥乙基及羥丙基之至少1種; [化4]
Figure 03_image026
於上述式(II)中,R 5表示選自氫原子、甲基、乙基及胺基乙基之至少1種,R 6表示選自氫原子、羥乙基、羥丙基、甲基及乙基之至少1種,R 7表示選自胺基乙基、羥乙基及羥丙基之至少1種。
A detergent composition for peeling off a resin mask, comprising the following component A, the following component B, and the following component C: Component A: a quaternary ammonium hydroxide represented by the following formula (I) and the following Amine Component B represented by Formula (II): Reducing Agent Component C: Water
Figure 03_image024
In the above formula (I), R 1 , R 2 , R 3 and R 4 are each independently at least one selected from methyl, ethyl, propyl, hydroxymethyl, hydroxyethyl and hydroxypropyl; [ 4]
Figure 03_image026
In the above formula (II), R 5 represents at least one selected from a hydrogen atom, methyl, ethyl and aminoethyl, and R 6 represents a hydrogen atom, hydroxyethyl, hydroxypropyl, methyl and At least one kind of ethyl group, and R 7 represents at least one kind selected from aminoethyl group, hydroxyethyl group and hydroxypropyl group.
如請求項10之洗淨劑組合物,其中成分B係抗壞血酸及2-羥基吡啶-N-氧化物之至少一者。The detergent composition of claim 10, wherein component B is at least one of ascorbic acid and 2-hydroxypyridine-N-oxide. 如請求項10之洗淨劑組合物,其中成分A之含量為5質量%以上15質量%以下,成分B之含量為0.05質量%以上5質量%以下。The detergent composition of claim 10, wherein the content of component A is 5 mass % or more and 15 mass % or less, and the content of component B is 0.05 mass % or more and 5 mass % or less. 如請求項10之洗淨劑組合物,其中成分A、成分B及成分C之合計量為90質量%以上。The detergent composition of claim 10, wherein the total amount of component A, component B and component C is 90% by mass or more. 如請求項10之洗淨劑組合物,其中成分C之含量為60質量%以上。The detergent composition of claim 10, wherein the content of component C is 60% by mass or more. 如請求項10至14中任一項之樹脂遮罩剝離用洗淨劑組合物,其中樹脂遮罩係鍍銅或鍍錫用遮罩。The cleaning composition for resin mask peeling according to any one of claims 10 to 14, wherein the resin mask is a mask for copper plating or tin plating. 一種樹脂遮罩剝離用洗淨劑組合物之用途,係用作電子零件之製造中之洗淨劑,上述樹脂遮罩剝離用洗淨劑組合物含有下述成分A、下述成分B及下述成分C; 成分A:下述式(I)所表示之四級銨氫氧化物及下述式(II)所表示之胺 成分B:還原劑 成分C:水 [化5]
Figure 03_image028
於上述式(I)中,R 1、R 2、R 3及R 4分別獨立為選自甲基、乙基、丙基、羥甲基、羥乙基及羥丙基之至少1種; [化6]
Figure 03_image030
於上述式(II)中,R 5表示選自氫原子、甲基、乙基及胺基乙基之至少1種,R 6表示選自氫原子、羥乙基、羥丙基、甲基及乙基之至少1種,R 7表示選自胺基乙基、羥乙基及羥丙基之至少1種。
A use of a cleaning composition for peeling off a resin mask, which is used as a cleaning agent in the manufacture of electronic parts, the above-mentioned cleaning composition for peeling off a resin mask contains the following component A, the following component B and the following Component C; Component A: quaternary ammonium hydroxide represented by the following formula (I) and amine represented by the following formula (II) Component B: reducing agent Component C: water
Figure 03_image028
In the above formula (I), R 1 , R 2 , R 3 and R 4 are each independently at least one selected from methyl, ethyl, propyl, hydroxymethyl, hydroxyethyl and hydroxypropyl; [ 6]
Figure 03_image030
In the above formula (II), R 5 represents at least one selected from a hydrogen atom, methyl, ethyl and aminoethyl, and R 6 represents a hydrogen atom, hydroxyethyl, hydroxypropyl, methyl and At least one kind of ethyl group, and R 7 represents at least one kind selected from aminoethyl group, hydroxyethyl group and hydroxypropyl group.
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