TW202209793A - Power supply device for increasing switch life - Google Patents
Power supply device for increasing switch life Download PDFInfo
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本發明係關於一種電源供應器,特別係關於一種可延長開關壽命之電源供應器。The present invention relates to a power supply, in particular to a power supply which can prolong the life of a switch.
在傳統電源供應器中,其功率切換器通常被設計成具有極短之切換放電時間,以支援電源供應器之高頻操作。然而,因為功率切換器之切換速度太快,容易導致其元件壽命縮短,以及產生電磁干擾等等問題。有鑑於此,勢必要提出一種全新之解決方案,以克服先前技術所面臨之困境。In conventional power supplies, the power switches are usually designed to have extremely short switching discharge times to support high frequency operation of the power supplies. However, because the switching speed of the power switch is too fast, it is easy to shorten the life of its components and cause problems such as electromagnetic interference. In view of this, it is necessary to propose a new solution to overcome the difficulties faced by the previous technology.
在較佳實施例中,本發明提出一種延長開關壽命之電源供應器,包括:一變壓器,包括一主線圈和一副線圈,其中該主線圈係用於接收一輸入電位,而該副線圈係用於產生一感應電位;一輸出級電路,根據該感應電位來產生一輸出電位;一第一電阻器;一第二電阻器;一功率切換器,經由該第一電阻器接收一脈衝寬度調變電位,其中該功率切換器係根據該脈衝寬度調變電位來選擇性地將該主線圈經由該第二電阻器耦接至一接地電位;一脈衝寬度調變積體電路,產生該脈衝寬度調變電位和一恆定電位;以及一控制電路,包括一減法器、一第一切換器,以及一第二切換器,其中該控制電路係根據該恆定電位和該脈衝寬度調變電位來控制該功率切換器之一切換放電時間。In a preferred embodiment, the present invention provides a power supply for extending switch life, comprising: a transformer including a main coil and a secondary coil, wherein the main coil is used for receiving an input potential, and the secondary coil is used for receiving an input potential. It is used to generate an induced potential; an output stage circuit generates an output potential according to the induced potential; a first resistor; a second resistor; a power switch, which receives a pulse width modulation through the first resistor variable potential, wherein the power switch selectively couples the main coil to a ground potential through the second resistor according to the pulse width modulation potential; a pulse width modulation integrated circuit generates the a pulse width modulated potential and a constant potential; and a control circuit including a subtractor, a first switch, and a second switch, wherein the control circuit is based on the constant potential and the pulse width modulated potential bit to control the switching discharge time of one of the power switches.
為讓本發明之目的、特徵和優點能更明顯易懂,下文特舉出本發明之具體實施例,並配合所附圖式,作詳細說明如下。In order to make the objects, features and advantages of the present invention more obvious and easy to understand, specific embodiments of the present invention are given in the following, and are described in detail as follows in conjunction with the accompanying drawings.
在說明書及申請專利範圍當中使用了某些詞彙來指稱特定的元件。本領域技術人員應可理解,硬體製造商可能會用不同的名詞來稱呼同一個元件。本說明書及申請專利範圍並不以名稱的差異來作為區分元件的方式,而是以元件在功能上的差異來作為區分的準則。在通篇說明書及申請專利範圍當中所提及的「包含」及「包括」一詞為開放式的用語,故應解釋成「包含但不僅限定於」。「大致」一詞則是指在可接受的誤差範圍內,本領域技術人員能夠在一定誤差範圍內解決所述技術問題,達到所述基本之技術效果。此外,「耦接」一詞在本說明書中包含任何直接及間接的電性連接手段。因此,若文中描述一第一裝置耦接至一第二裝置,則代表該第一裝置可直接電性連接至該第二裝置,或經由其它裝置或連接手段而間接地電性連接至該第二裝置。Certain terms are used throughout the specification and claims to refer to particular elements. It should be understood by those skilled in the art that hardware manufacturers may refer to the same element by different nouns. This specification and the scope of the patent application do not use the difference in name as a way to distinguish elements, but use the difference in function of the elements as a criterion for distinguishing. The words "including" and "including" mentioned in the entire specification and the scope of the patent application are open-ended terms, so they should be interpreted as "including but not limited to". The word "substantially" means that within an acceptable error range, those skilled in the art can solve the technical problem within a certain error range and achieve the basic technical effect. Furthermore, the term "coupled" in this specification includes any direct and indirect electrical connection means. Therefore, if a first device is described as being coupled to a second device, it means that the first device can be directly electrically connected to the second device, or indirectly electrically connected to the second device through other devices or connecting means. Second device.
第1圖係顯示根據本發明一實施例所述之電源供應器100之示意圖。例如,電源供應器100可應用於桌上型電腦、筆記型電腦,或一體成形電腦。如第1圖所示,電源供應器100包括:一變壓器110、一輸出級電路120、一第一電阻器R1、一第二電阻器R2、一功率切換器130、一脈衝寬度調變積體電路140,以及一控制電路150。必須注意的是,雖然未顯示於第1圖中,但電源供應器100更可包括其他元件,例如:一穩壓器或(且)一負回授電路。FIG. 1 is a schematic diagram of a
變壓器110包括一主線圈111和一副線圈112,其中主線圈111可位於變壓器110之一側,而副線圈112則可位於變壓器110之相對另一側。主線圈111可接收一輸入電位VIN,而作為對於輸入電位VIN之回應,副線圈112可產生一感應電位VS。輸入電位VIN可來自一外部輸入電源。例如,輸入電位VIN可大致為一直流電位或一交流電位,其方均根值可由90V至264V,但亦不僅限於此。輸出級電路120可根據感應電位VS來產生一輸出電位VOUT。例如,輸出電位VOUT可為一直流電位,其電位位準可由18V至22V,但亦不僅限於此。功率切換器130可經由第一電阻器R1接收一脈衝寬度調變電位VM,其中功率切換器130可根據脈衝寬度調變電位VM來選擇性地將主線圈111經由第二電阻器R2耦接至一接地電位VSS(例如:0V)。例如,若脈衝寬度調變電位VM為高邏輯位準(亦即,邏輯「1」),則功率切換器130即將主線圈111經由第二電阻器R2耦接至接地電位VSS(亦即,功率切換器130可近似於一短路路徑);反之,若脈衝寬度調變電位VM為低邏輯位準(亦即,邏輯「0」),則功率切換器130不會將主線圈111經由第二電阻器R2耦接至接地電位VSS(亦即,功率切換器130可近似於一開路路徑)。脈衝寬度調變積體電路140可產生脈衝寬度調變電位VM和一恆定電位VK。控制電路150包括一減法器152、一第一切換器154,以及一第二切換器156,其中控制電路150可根據恆定電位VK和脈衝寬度調變電位VM來控制功率切換器130之一切換放電時間。藉由調整功率切換器130之切換放電時間,功率切換器130之放電操作將能得到適當緩衝。因此,電源供應器100之功率切換器130之使用壽命將可有效地延長。The
以下實施例將介紹電源供應器100之詳細結構及操作方式。必須理解的是,這些圖式和敘述僅為舉例,而非用於限制本發明之範圍。The following embodiments will introduce the detailed structure and operation of the
第2圖係顯示根據本發明一實施例所述之電源供應器200之示意圖。在第2圖之實施例中,電源供應器200具有一輸入節點NIN和一輸出節點NOUT,並包括一變壓器210、一輸出級電路220、一第一電阻器R1、一第二電阻器R2、一功率切換器230、一脈衝寬度調變積體電路240,以及一控制電路250。電源供應器200之輸入節點NIN可由一外部輸入電源處接收一輸入電位VIN,而電源供應器200之輸出節點NOUT可輸出一輸出電位VOUT至一電子裝置(未顯示)。FIG. 2 is a schematic diagram of a
變壓器210包括一主線圈211和一副線圈212,其中變壓器210可內建一激磁電感器LM。激磁電感器LM可為變壓器210製造時所附帶產生之一固有元件,其並非一外部獨立元件。主線圈211和激磁電感器LM皆可位於變壓器210之同一側,而副線圈212則可位於變壓器210之相對另一側。主線圈211具有一第一端和一第二端,其中主線圈211之第一端係耦接至輸入節點NIN,而主線圈211之第二端係耦接至一第一節點N1。激磁電感器LM具有一第一端和一第二端,其中激磁電感器LM之第一端係耦接至輸入節點NIN,而激磁電感器LM之第二端係耦接至第一節點N1。副線圈212具有一第一端和一第二端,其中副線圈212之第一端係耦接至一第二節點N2以輸出一感應電位VS,而副線圈212之第二端係耦接至一共同節點NCM。The
輸入級電路220包括一二極體D1和一第一電容器C1。二極體D1具有一陽極和一陰極,其中二極體D1之陽極係耦接至第二節點N2以接收感應電位VS,而二極體D1之陰極係耦接至輸出節點NOUT。第一電容器C1具有一第一端和一第二端,其中第一電容器C1之第一端係耦接至輸出節點NOUT,而第一電容器C1之第二端係耦接至共同節點NCM。The
功率切換器230包括一第一電晶體M1。第一電晶體M1可為一N型金氧半場效電晶體。第一電晶體M1具有一控制端(例如:一閘極)、一第一端(例如:一源極),以及一第二端(例如:一汲極),其中第一電晶體M1之控制端係耦接至一第三節點N3,第一電晶體M1之第一端係耦接至一第四節點N4,而第一電晶體M1之第二端係耦接至第一節點N1。第一電晶體M1可內建一第一寄生電容器CP1。第一寄生電容器CP1具有一第一端和一第二端,其中第一寄生電容器CP1之第一端係耦接至第三節點N3,而第一寄生電容器CP1之第二端係耦接至接地電位VSS。必須理解的是,第一電晶體M1之控制端和第一端之間之總寄生電容可模擬為前述之第一寄生電容器CP1,其並非一外部獨立元件。The
第一電阻器R1具有一第一端和一第二端,其中第一電阻器R1之第一端係用於接收一脈衝寬度調變電位VM,而第一電阻器R1之第二端係耦接至第三節點N3。第二電阻器R2具有一第一端和一第二端,其中第二電阻器R2之第一端係耦接至第四節點N4,而第二電阻器R2之第二端係耦接至一接地電位VSS(例如:0V)。必須注意的是,因為第二電阻器R2之電阻值不大,故第一電晶體M1之第一寄生電容器CP1可近似為耦接於第三節點N3和接地電位VSS之間。在另一些實施例中,第一電晶體M1之第一寄生電容器CP1亦可改為耦接於第三節點N3和第四節點N4之間。The first resistor R1 has a first end and a second end, wherein the first end of the first resistor R1 is used for receiving a pulse width modulation potential VM, and the second end of the first resistor R1 is used for receiving a pulse width modulation potential VM. is coupled to the third node N3. The second resistor R2 has a first end and a second end, wherein the first end of the second resistor R2 is coupled to the fourth node N4, and the second end of the second resistor R2 is coupled to a Ground potential VSS (eg 0V). It must be noted that because the resistance value of the second resistor R2 is not large, the first parasitic capacitor CP1 of the first transistor M1 can be approximately coupled between the third node N3 and the ground potential VSS. In other embodiments, the first parasitic capacitor CP1 of the first transistor M1 can also be coupled between the third node N3 and the fourth node N4 instead.
脈衝寬度調變積體電路240可產生脈衝寬度調變電位VM和一恆定電位VK,其中恆定電位VK可高於或等於脈衝寬度調變電位VM。另外,脈衝寬度調變電位VM於電源供應器200初始化時可維持於一固定電位,而在電源供應器200進入正常使用階段後則可提供週期性之時脈波形。The PWM integrated
控制電路250包括一減法器252、一第一切換器254、一第二切換器256、一第二電容器C2、一第三電阻器R3、一第四電阻器R4,以及一電感器L1。The
減法器252具有一第一輸入端、一第二輸入端,以及一輸出端,其中減法器252之第一輸入端係用於接收恆定電位VK,減法器252之第二輸入端係用於接收脈衝寬度調變電位VM,而減法器252之輸出端係用於輸出一差值電位VD,其等於恆定電位VK減去脈衝寬度調變電位VM。亦即,減法器252之運算可如下列方程式(1)所述:The
……………………………………(1) 其中「VD」代表差值電位VD,「VK」代表恆定電位VK,而「VM」代表脈衝寬度調變電位VM。 ………………………………(1) “VD” represents the difference potential VD, “VK” represents the constant potential VK, and “VM” represents the pulse width modulation potential VM.
第二電容器C2具有一第一端和一第二端,其中第二電容器C2之第一端係用於接收差值電位VD,而第二電容器C2之第二端係耦接至一第五節點N5。第三電阻器R3具有一第一端和一第二端,其中第三電阻器R3之第一端係耦接至第五節點N5,而第三電阻器R3之第二端係耦接至一第六節點N6。The second capacitor C2 has a first terminal and a second terminal, wherein the first terminal of the second capacitor C2 is used for receiving the difference potential VD, and the second terminal of the second capacitor C2 is coupled to a fifth node N5. The third resistor R3 has a first end and a second end, wherein the first end of the third resistor R3 is coupled to the fifth node N5, and the second end of the third resistor R3 is coupled to a The sixth node N6.
第一切換器254包括一第二電晶體M2。第二電晶體M2可為一N型金氧半場效電晶體。第二電晶體M2具有一控制端(例如:一閘極)、一第一端(例如:一源極),以及一第二端(例如:一汲極),其中第二電晶體M2之控制端係耦接至第六節點N6,第二電晶體M2之第一端係耦接至一第七節點N7,而第二電晶體M2之第二端係耦接至第三節點N3。第二電晶體M2可內建一第二寄生電容器CP2。第二寄生電容器CP2具有一第一端和一第二端,其中第二寄生電容器CP2之第一端係耦接至第三節點N3,而第二寄生電容器CP2之第二端係耦接至第七節點N7。必須理解的是,第二電晶體M2之第二端和第一端之間之總寄生電容可模擬為前述之第二寄生電容器CP2,其並非一外部獨立元件。The
第四電阻器R4具有一第一端和一第二端,其中第四電阻器R4之第一端係耦接至第五節點N5,而第四電阻器R4之第二端係耦接至一第八節點N8。電感器L1具有一第一端和一第二端,其中電感器L1之第一端係耦接至第七節點N7,而電感器L1之第二端係耦接至接地電位VSS。在一些實施例中,第三電阻器R3之電阻值係小於或等於第四電阻器R4之電阻值之一半。The fourth resistor R4 has a first end and a second end, wherein the first end of the fourth resistor R4 is coupled to the fifth node N5, and the second end of the fourth resistor R4 is coupled to a The eighth node N8. The inductor L1 has a first end and a second end, wherein the first end of the inductor L1 is coupled to the seventh node N7, and the second end of the inductor L1 is coupled to the ground potential VSS. In some embodiments, the resistance value of the third resistor R3 is less than or equal to half of the resistance value of the fourth resistor R4.
第二切換器256包括一第三電晶體M3。第三電晶體M3可為一N型金氧半場效電晶體。第三電晶體M3具有一控制端(例如:一閘極)、一第一端(例如:一源極),以及一第二端(例如:一汲極),其中第三電晶體M3之控制端係耦接至第八節點N8,第三電晶體M3之第一端係耦接至第七節點N7,而第三電晶體M3之第二端係耦接至第三節點N3。第三電晶體M3可內建一第三寄生電容器CP3。第三寄生電容器CP3具有一第一端和一第二端,其中第三寄生電容器CP3之第一端係耦接至第三節點N3,而第三寄生電容器CP3之第二端係耦接至第七節點N7。必須理解的是,第三電晶體M3之第二端和第一端之間之總寄生電容可模擬為前述之第三寄生電容器CP3,其並非一外部獨立元件。The
第3圖係顯示根據本發明一實施例所述之電源供應器200之電位波形圖,其中橫軸代表時間,而縱軸代表第三節點N3處之一控制電位VC之電位位準。因應控制電位VC之變化,電源供應器200可依序操作於一第一階段T1、一第二階段T2、一第三階段T3、一第四階段T4,以及一第五階段T5,其原理可如下列所述。FIG. 3 shows a potential waveform diagram of the
在第一階段T1期間,脈衝寬度調變電位VM為高邏輯位準,而控制電位VC則具有最高電位位準。此時,第一電晶體M1係完全導通,而激磁電感器LM正在儲存電磁能量。During the first phase T1, the PWM potential VM is at a high logic level, and the control potential VC is at the highest potential level. At this time, the first transistor M1 is fully turned on, and the magnetizing inductor LM is storing electromagnetic energy.
在第二階段T2期間,脈衝寬度調變電位VM準備由高邏輯位準切換為低邏輯位準,而控制電位VC則由最高電位位準處開始逐漸下降。此時,由於脈衝寬度調變電位VM相對較高,減法器252之差值電位VD尚不足以致能第二電晶體M2和第三電晶體M3。因此,第一電晶體M1之第一寄生電容器CP1主要係經由第一電阻器R1來進行放電。During the second phase T2, the PWM potential VM is ready to be switched from a high logic level to a low logic level, and the control potential VC starts to decrease gradually from the highest potential level. At this time, since the PWM potential VM is relatively high, the difference potential VD of the
在第三階段T3期間,脈衝寬度調變電位VM和控制電位VC兩者皆持續下降。此時,由於脈衝寬度調變電位VM相對中間,減法器252之差值電位VD已可致能第二電晶體M2,但仍不足以致能第三電晶體M3。因此,第一電晶體M1之第一寄生電容器CP1主要係經由一第一緩衝電路460來進行放電。第4圖係顯示根據本發明一實施例所述之第一緩衝電路460之示意圖。如第4圖所示,第一緩衝電路460係由一第一導通電阻器RM2、第二寄生電容器CP2,以及電感器L1所共同組成,其中第一導通電阻器RM2可代表第二電晶體M2被致能時所產生之等效電阻值。During the third phase T3, both the PWM potential VM and the control potential VC continue to decrease. At this time, since the PWM potential VM is relatively middle, the difference potential VD of the
在第四階段T4期間,脈衝寬度調變電位VM和控制電位VC兩者仍皆持續下降。此時,由於脈衝寬度調變電位VM相對較低,減法器252之差值電位VD已可同時致能第二電晶體M2和第三電晶體M3。因此,第一電晶體M1之第一寄生電容器CP1主要係經由一第二緩衝電路570來進行放電。第5圖係顯示根據本發明一實施例所述之第二緩衝電路570之示意圖。如第5圖所示,第二緩衝電路570係由第一導通電阻器RM2、一第二導通電阻器RM3、第二寄生電容器CP2、第三寄生電容器CP3,以及電感器L1所共同組成,其中第二導通電阻器RM3可代表第三電晶體M3被致能時所產生之等效電阻值。During the fourth phase T4, both the PWM potential VM and the control potential VC are still continuously decreasing. At this time, since the PWM potential VM is relatively low, the difference potential VD of the
在第五階段T5期間,脈衝寬度調變電位VM已下降至低邏輯位準,而控制電位VC則具有最低電位位準。此時,第一電晶體M1係完全截止,而第二電晶體M2和第三電晶體M3皆同時被禁能。在此設計下,電源供應器200之功率切換器230可進行至少三階段之緩衝放電操作(例如:第二階段T2、第三階段T3,以及第四階段T4),其有助於延長功率切換器230之使用壽命。During the fifth stage T5, the PWM potential VM has dropped to a low logic level, and the control potential VC has the lowest potential level. At this time, the first transistor M1 is completely turned off, and both the second transistor M2 and the third transistor M3 are disabled at the same time. Under this design, the
在一些實施例中,電源供應器200之元件參數可如下列所述。第一電容器C1之電容值可介於544μF至816μF之間,較佳可約為680μF。第二電容器C2之電容值可介於9nF至11nF之間,較佳可約為10nF。第一寄生電容器CP1之電容值可介於640pF至960pF之間,較佳可約為800pF。第二寄生電容器CP2之電容值可介於120pF至180pF之間,較佳可約為150pF。第三寄生電容器CP3之電容值可介於120pF至180pF之間,較佳可約為150pF。電感器L1之電感值可介於1.8μH至2.2μH之間,較佳可約為2μH。激磁電感器LM之電感值可介於240μH至360μH之間,較佳可約為300μH。第一電阻器R1之電阻值可介於9.9Ω至10.1Ω之間,較佳可約為10Ω。第二電阻器R2之電阻值可介於0.9KΩ至1.1KΩ之間,較佳可約為1KΩ。第三電阻器R3之電阻值可介於14.85Ω至15.15Ω之間,較佳可約為15Ω。第四電阻器R4之電阻值可介於39.6Ω至40.4Ω之間,較佳可約為40Ω。第一導通電阻器RM2之電阻值可介於79.2mΩ至80.8mΩ之間,較佳可約為80mΩ。第二導通電阻器RM3之電阻值可介於79.2mΩ至80.8mΩ之間,較佳可約為80mΩ。主線圈211對副線圈212之匝數比值可介於1至100之間,較佳可約為10。恆定電位VK可約等於15V。脈衝寬度調變電位VM之切換頻率可約為65kHz,而其高邏輯位準可約等於15V。以上參數範圍係根據多次實驗結果而得出,其有助於最大化電源供應器200之開關使用壽命。In some embodiments, the component parameters of the
本發明提出一種新穎之電源供應器,其包括控制電路以調整功率切換器之切換放電時間。根據實際量測結果,使用前述設計之電源供應器可有效延長功率切換器之使用壽命,故其很適合應用於各種各式之裝置當中。The present invention provides a novel power supply including a control circuit to adjust the switching discharge time of the power switch. According to the actual measurement results, the use of the above-designed power supply can effectively prolong the service life of the power switch, so it is very suitable for use in various types of devices.
值得注意的是,以上所述之電位、電流、電阻值、電感值、電容值,以及其餘元件參數均非為本發明之限制條件。設計者可以根據不同需要調整這些設定值。本發明之電源供應器並不僅限於第1-5圖所圖示之狀態。本發明可以僅包括第1-5圖之任何一或複數個實施例之任何一或複數項特徵。換言之,並非所有圖示之特徵均須同時實施於本發明之電源供應器當中。雖然本發明之實施例係使用金氧半場效電晶體為例,但本發明並不僅限於此,本技術領域人士可改用其他種類之電晶體,例如:接面場效電晶體,或是鰭式場效電晶體等等,而不致於影響本發明之效果。It should be noted that the potential, current, resistance value, inductance value, capacitance value and other component parameters mentioned above are not limitations of the present invention. Designers can adjust these settings according to different needs. The power supply of the present invention is not limited to the states shown in FIGS. 1-5. The present invention may include only any one or more of the features of any one or more of the embodiments of Figures 1-5. In other words, not all the features shown in the figures need to be simultaneously implemented in the power supply of the present invention. Although the embodiments of the present invention use MOSFETs as an example, the present invention is not limited to this, and those skilled in the art can use other types of transistors, such as junction field effect transistors, or fins type field effect transistor, etc., without affecting the effect of the present invention.
在本說明書以及申請專利範圍中的序數,例如「第一」、「第二」、「第三」等等,彼此之間並沒有順序上的先後關係,其僅用於標示區分兩個具有相同名字之不同元件。The ordinal numbers in this specification and the scope of the patent application, such as "first", "second", "third", etc., do not have a sequential relationship with each other, and are only used to mark and distinguish two identical different elements of the name.
本發明雖以較佳實施例揭露如上,然其並非用以限定本發明的範圍,任何熟習此項技藝者,在不脫離本發明之精神和範圍內,當可做些許的更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。Although the present invention is disclosed above with preferred embodiments, it is not intended to limit the scope of the present invention. Anyone skilled in the art can make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, The protection scope of the present invention shall be determined by the scope of the appended patent application.
100,200:電源供應器
110,210:變壓器
111,211:主線圈
112,212:副線圈
120,220:輸出級電路
130,230:功率切換器
140,240:脈衝寬度調變積體電路
150,250:控制電路
152,252:減法器
154,254:第一切換器
156,256:第二切換器
460:第一緩衝電路
570:第二緩衝電路
C1:第一電容器
C2:第二電容器
CP1:第一寄生電容器
CP2:第二寄生電容器
CP3:第三寄生電容器
D1:二極體
L1:電感器
LM:激磁電感器
M1:第一電晶體
M2:第二電晶體
M3:第三電晶體
N1:第一節點
N2:第二節點
N3:第三節點
N4:第四節點
N5:第五節點
N6:第六節點
N7:第七節點
N8:第八節點
NCM:共同節點
NIN:輸入節點
NOUT:輸出節點
R1:第一電阻器
R2:第二電阻器
R3:第三電阻器
R4:第四電阻器
RM2:第一導通電阻器
RM3:第二導通電阻器
T1:第一階段
T2:第二階段
T3:第三階段
T4:第四階段
T5:第五階段
VC:控制電位
VD:差值電位
VIN:輸入電位
VK:恆定電位
VM:脈衝寬度調變電位
VOUT:輸出電位
VS:感應電位
VSS:接地電位100,200:
第1圖係顯示根據本發明一實施例所述之電源供應器之示意圖。 第2圖係顯示根據本發明一實施例所述之電源供應器之示意圖。 第3圖係顯示根據本發明一實施例所述之電源供應器之電位波形圖。 第4圖係顯示根據本發明一實施例所述之第一緩衝電路之示意圖。 第5圖係顯示根據本發明一實施例所述之第二緩衝電路之示意圖。FIG. 1 is a schematic diagram of a power supply according to an embodiment of the present invention. FIG. 2 is a schematic diagram showing a power supply according to an embodiment of the present invention. FIG. 3 shows a potential waveform diagram of a power supply according to an embodiment of the present invention. FIG. 4 is a schematic diagram illustrating a first buffer circuit according to an embodiment of the present invention. FIG. 5 is a schematic diagram illustrating a second buffer circuit according to an embodiment of the present invention.
100:電源供應器100: Power supply
110:變壓器110: Transformer
111:主線圈111: main coil
112:副線圈112: Secondary coil
120:輸出級電路120: Output stage circuit
130:功率切換器130: Power switch
140:脈衝寬度調變積體電路140: Pulse width modulation integrated circuit
150:控制電路150: Control circuit
152:減法器152: Subtractor
154:第一切換器154: First Switcher
156:第二切換器156: Second switcher
R1:第一電阻器R1: first resistor
R2:第二電阻器R2: Second resistor
VIN:輸入電位VIN: input potential
VK:恆定電位VK: constant potential
VM:脈衝寬度調變電位VM: PWM potential
VOUT:輸出電位VOUT: output potential
VS:感應電位VS: induced potential
VSS:接地電位VSS: ground potential
Claims (10)
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