TW202206768A - A high-power vapor chamber structure manufacturing method - Google Patents

A high-power vapor chamber structure manufacturing method Download PDF

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TW202206768A
TW202206768A TW109127710A TW109127710A TW202206768A TW 202206768 A TW202206768 A TW 202206768A TW 109127710 A TW109127710 A TW 109127710A TW 109127710 A TW109127710 A TW 109127710A TW 202206768 A TW202206768 A TW 202206768A
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support structure
slurry
substrate
capillary structure
capillary
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TW109127710A
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TWI749708B (en
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陳振賢
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大陸商廣州力及熱管理科技有限公司
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Abstract

A high-power vapor chamber structure manufacturing method includes following steps: providing a first plate having a first support structure; providing a second plate having a second support structure; deploy a wick paste and cover the first support structure and the second support structure separately; heating the wick paste to form a first wick structure and a second wick structure; sealing the edge of the first plate and the second plate to form a vapor chamber structure The present invention solved the problem of the uneven distribution of the working fluid on both side of the high-power vapor chamber structure. The invention improves the technical problems of the mutual connection of wick structures on the upper and lower sides of the high-power vapor chamber and the intercommunication of liquid-phase working fluid, so as to make the manufacturing of high-power vapor chamber devices more convenient and suitable for mass production.

Description

一種大功率均溫板結構的製造方法 A kind of manufacturing method of high-power uniform temperature plate structure

本發明提供一種製作大功率均溫板結構的製造方法,特別是一種兩面皆具有毛細結構之大功率均溫板結構的製造方法。 The present invention provides a method for manufacturing a high-power vapor chamber structure, particularly a method for manufacturing a high-power vapor chamber structure with capillary structures on both sides.

均溫板是一種應用於電子設備的熱能傳遞構造元件,係用以導熱降溫。其包括兩塊基板,基板與基板之間形成一扁平狀密閉腔體。密閉腔體設有毛細結構並容置有工作流體。均溫板之工作原理係,當部分均溫板與熱源接觸時,均溫板內位於吸熱端(Evaporator)之工作流體吸收熱源之熱能而從液相轉為氣相而釋放出潛熱(Latent Heat)。接著,氣相工作流體向遠離熱源之冷凝端(Condenser)快速流動。當氣相之工作流體流至密閉腔體內冷凝端時,工作流體又從氣相轉為液相,並藉由毛細結構之毛細力(Capillary force)回流至吸熱端。均溫板藉由工作流體於吸熱與放熱時產生的相變化,快速大量吸收電子元件熱點(Hot Spot)所產生的熱能,使其熱能快速的分散以達成均溫功效。 Vapor chamber is a thermal energy transfer structural element used in electronic equipment, which is used for heat conduction and cooling. It includes two substrates, and a flat closed cavity is formed between the substrates. The closed cavity is provided with a capillary structure and accommodates the working fluid. The working principle of the vapor chamber is that when part of the vapor chamber is in contact with the heat source, the working fluid at the end of the vapor chamber absorbs the heat energy of the heat source and changes from the liquid phase to the vapor phase to release latent heat. ). Then, the gas-phase working fluid flows rapidly toward the condensation end (Condenser) away from the heat source. When the working fluid in the gas phase flows to the condensation end in the closed cavity, the working fluid changes from the gas phase to the liquid phase, and flows back to the endothermic end by the capillary force of the capillary structure. Through the phase change of the working fluid during heat absorption and heat release, the vapor chamber quickly absorbs a large amount of heat energy generated by the hot spot of electronic components, so that the heat energy is quickly dispersed to achieve the temperature uniformity effect.

當電子元件之功率高時,將導致局部區域累積熱能較快而形成熱點。用均溫板來做為解熱及導熱元件時,通常會在均溫板的兩片扁平基板上都設置毛細結構,藉以提升均溫板傳導熱能的效率。然而,電子元件熱源往往只與均溫板的一面基板接觸,而另一面基板之毛細結構內的工 作流體就較為不易進行氣液循環。 When the power of electronic components is high, it will lead to the rapid accumulation of heat energy in local areas and the formation of hot spots. When the vapor chamber is used as an antipyretic and heat-conducting element, capillary structures are usually arranged on both flat substrates of the vapor chamber, so as to improve the heat conduction efficiency of the vapor chamber. However, the heat source of electronic components is often only in contact with one substrate of the vapor chamber, and the process in the capillary structure of the other substrate is As a fluid, it is more difficult to carry out gas-liquid circulation.

因此,如何達到可以解決毛細結構之工作流體分布不均勻的問題,並且節省人力成本、提升大功率均溫板元件產品之大量生產的效率,是本領域製作均溫板極需解決之課題。 Therefore, how to solve the problem of uneven distribution of the working fluid in the capillary structure, save labor costs, and improve the efficiency of mass production of high-power vapor chamber components is an extremely urgent problem to be solved in the field of vapor chamber fabrication.

有鑑於此,本發明提出了一種大功率均溫板結構的製造方法,設計上下蓋板毛細結構相連通,使非接觸熱源面之液相工作流體也能回流至接觸熱源面之吸熱區,解決了大功率均溫板之兩面工作流體分布不均勻以及容易坍塌變形之問題。此外,本發明是以印刷漿料的方式製作支撐柱上之毛細結構,因此很大程度地提升產品量產自動化及降低生產成本的程度。 In view of this, the present invention proposes a method for manufacturing a high-power temperature equalizing plate structure. The capillary structures of the upper and lower cover plates are designed to be connected, so that the liquid-phase working fluid on the non-contact heat source surface can also flow back to the heat absorption area of the contact heat source surface, so as to solve the problem. The problem of uneven distribution of the working fluid on both sides of the high-power vapor chamber and easy collapse and deformation is solved. In addition, the present invention manufactures the capillary structure on the support column by means of printing paste, thus greatly improving the automation of mass production and reducing the production cost.

本發明提供一種大功率均溫板結構的製造方法,其步驟包含有:提供第一基板,第一基板之第一表面上具有第一支撐結構;提供第二基板,第二基板之第二表面上具有對應第一支撐結構之第二支撐結構;分別舖置並包覆一毛細結構漿料於第一支撐結構和第二支撐結構;加熱毛細結構漿料以形成包覆第一支撐結構之第一毛細結構,以及包覆第二支撐結構之第二毛細結構;以及封合第一基板與第二基板之周緣形成一均溫板結構,且第一支撐結構和第二支撐結構透過第一毛細結構和第二毛細結構互相抵頂。 The present invention provides a method for manufacturing a high-power vapor chamber structure. The steps include: providing a first substrate with a first support structure on a first surface of the first substrate; providing a second substrate on a second surface of the second substrate There is a second support structure corresponding to the first support structure; respectively laying and covering a capillary structure slurry on the first support structure and the second support structure; heating the capillary structure slurry to form a first support structure covering the first support structure a capillary structure, and a second capillary structure covering the second support structure; and sealing the periphery of the first substrate and the second substrate to form an isothermal plate structure, and the first support structure and the second support structure pass through the first capillary The structure and the second capillary structure abut each other.

其中,分別舖置毛細結構漿料之步驟進一步包含有以下子步驟:分別舖置毛細結構漿料於第一表面與第二表面上,且毛細結構漿料包覆第一支撐結構和第二支撐結構。 Wherein, the step of respectively laying the capillary structure slurry further includes the following sub-steps: respectively laying the capillary structure slurry on the first surface and the second surface, and the capillary structure slurry coats the first support structure and the second support structure.

其中,加熱毛細結構漿料之步驟進一步包含有以下子步驟:加熱毛細結構漿料以形成覆蓋第一表面且包覆第一支撐結構之第一毛細結構,以及覆蓋第二表面且包覆第二支撐結構之第二毛細結構。 Wherein, the step of heating the capillary structure slurry further includes the following sub-steps: heating the capillary structure slurry to form a first capillary structure covering the first surface and covering the first support structure, and covering the second surface and covering the second capillary structure The second capillary structure of the support structure.

其中,本發明製造方法進一步包含有下列步驟:舖置銅粉末於第一表面上;以及燒結銅粉末以形成覆蓋第一表面且連結第一毛細結構之第一銅粉末燒結毛細結構。 Wherein, the manufacturing method of the present invention further comprises the following steps: laying copper powder on the first surface; and sintering the copper powder to form a first copper powder sintered capillary structure covering the first surface and connecting the first capillary structure.

其中,提供第一基板之步驟進一步包含有以下子步驟:提供具有第一凹槽於第一表面之第一基板;圖形化地舖置一支撐結構漿料於第一凹槽內;以及加熱支撐結構漿料以形成圖形化之第一支撐結構。 Wherein, the step of providing the first substrate further includes the following sub-steps: providing a first substrate with a first groove on the first surface; patterning a support structure paste in the first groove; and heating the support structure paste to form a patterned first support structure.

其中,第一支撐結構進一步係為一第一圖形化金屬支撐結構。 Wherein, the first support structure is further a first patterned metal support structure.

其中,毛細結構漿料進一步包含有金屬粉末、溶劑和聚合物,且加熱毛細結構漿料之步驟進一步包含有下列子步驟:加熱烘烤毛細結構漿料以去除溶劑而形成固化體;加熱固化體以裂解並去除聚合物;以及加熱並燒結金屬粉末以形成包覆第一支撐結構之第一毛細結構,以及包覆第二支撐結構之第二毛細結構。 Wherein, the capillary structure slurry further includes metal powder, a solvent and a polymer, and the step of heating the capillary structure slurry further includes the following sub-steps: heating and baking the capillary structure slurry to remove the solvent to form a solidified body; heating the solidified body to crack and remove the polymer; and heat and sinter the metal powder to form a first capillary structure that coats the first support structure, and a second capillary structure that coats the second support structure.

在一具體實施例中,一種大功率均溫板結構的製造方法,進一步包含有下列步驟:環形舖置一緻密牆漿料於第一基板之周緣以形成漿料牆;加熱漿料牆以形成一緻密結構牆,緻密結構牆內形成第一凹槽。 In a specific embodiment, a method for manufacturing a high-power vapor chamber structure further includes the following steps: annularly laying a dense wall slurry on the periphery of the first substrate to form a slurry wall; heating the slurry wall to form a slurry wall A dense structure wall is formed, and a first groove is formed in the dense structure wall.

其中,本發明製造方法中,於封合第一基板與第二基板之周緣之步驟之後,進一步包含有下列步驟:注入一工作流體於均溫板結構之內;抽出均溫板結構內之空氣以形成容納工作流體、第一毛細結構和第二 毛細結構之一負壓空腔;以及氣密封合均溫板結構。 Wherein, in the manufacturing method of the present invention, after the step of sealing the periphery of the first substrate and the second substrate, the following steps are further included: injecting a working fluid into the vapor chamber structure; extracting the air in the vapor chamber structure to form a containing working fluid, a first capillary structure and a second One of the capillary structures is a negative pressure cavity; and a hermetically sealed vapor chamber structure.

其中,均溫板結構用於進一步加工而製造一均溫板。 Wherein, the vapor chamber structure is used for further processing to manufacture a vapor chamber.

綜上所述,本發明提供了一種兩面皆具毛細結構之大功率均溫板結構的製造方法,藉由兩片基板之間的支撐結構使得兩片基板不會因氣壓差而產生變形及塌陷。並且,使工作流體能夠有效地於兩片基板之間流動,增加熱傳導以及熱對流之效率,以有效地達到導熱、散熱、解熱、均溫的功能。 In summary, the present invention provides a method for manufacturing a high-power vapor chamber structure with capillary structures on both sides. The support structure between the two substrates prevents the two substrates from being deformed and collapsed due to the difference in air pressure. . In addition, the working fluid can effectively flow between the two substrates to increase the efficiency of heat conduction and heat convection, so as to effectively achieve the functions of heat conduction, heat dissipation, heat dissipation and temperature uniformity.

1:第一基板 1: The first substrate

11:第一表面 11: The first surface

12:第一支撐結構 12: The first support structure

2:第二基板 2: Second substrate

21:第二表面 21: Second surface

22:第二支撐結構 22: Second support structure

3:毛細結構漿料 3: capillary structure slurry

31:第一毛細結構 31: The first capillary structure

32:第二毛細結構 32: Second capillary structure

33:鋼板 33: Steel plate

34:刮刀 34: Scraper

35:固化體 35: Cured body

4:銅粉末 4: Copper powder

41:第一銅粉末燒結毛細結構 41: The first copper powder sintered capillary structure

42:第二銅粉末毛細結構 42: Second copper powder capillary structure

5:均溫板結構 5: Vapor chamber structure

51:吸熱端 51: Endothermic end

52:冷凝端 52: Condensing end

6:支撐結構漿料 6: Support structure slurry

61:柱狀支撐結構 61: Columnar support structure

62:牆狀支撐結構 62: Wall Support Structure

S1~S9:步驟 S1~S9: Steps

S11~S13:子步驟 S11~S13: Substeps

S31:子步驟 S31: Substep

S41~S44:子步驟 S41~S44: Substeps

S3’,S4’:步驟 S3', S4': Steps

S91:步驟 S91: Steps

圖1係繪示本發明之一具體實施例之步驟流程圖。 FIG. 1 is a flow chart showing the steps of an embodiment of the present invention.

圖2係根據圖1之流程所繪示之示意圖。 FIG. 2 is a schematic diagram according to the flow chart of FIG. 1 .

圖3係繪示根據圖1之另一具體實施例之步驟流程圖。 FIG. 3 is a flow chart of steps according to another embodiment of FIG. 1 .

圖4係繪示根據圖3之流程所繪示之示意圖。 FIG. 4 is a schematic diagram according to the process shown in FIG. 3 .

圖5係繪示本發明之又一具體實施例之步驟流程圖。 FIG. 5 is a flow chart showing the steps of another specific embodiment of the present invention.

圖6係根據圖5之流程所繪示之示意圖。 FIG. 6 is a schematic diagram according to the flowchart of FIG. 5 .

圖7係繪示本發明之又一具體實施例之步驟流程圖。 FIG. 7 is a flow chart showing the steps of another specific embodiment of the present invention.

圖8係繪示本發明之一具體實施例之均溫板之第一基板和第二基板之俯視圖。 8 is a top view of the first substrate and the second substrate of the vapor chamber according to an embodiment of the present invention.

圖9係繪示本發明之另一具體實施例之均溫板之第一基板和第二基板之俯視圖。 FIG. 9 is a top view of the first substrate and the second substrate of the vapor chamber according to another embodiment of the present invention.

圖10係繪示本發明之又一具體實施例之步驟流程圖。 FIG. 10 is a flow chart showing the steps of another specific embodiment of the present invention.

圖11係根據圖10之流程所繪示之示意圖。 FIG. 11 is a schematic diagram according to the flow of FIG. 10 .

圖12係繪示本發明之又一具體實施例之均溫板毛細結構之製造方法之進一步之步驟流程圖。 12 is a flow chart showing further steps of the method for manufacturing the capillary structure of the vapor chamber according to another embodiment of the present invention.

圖13係繪示本發明之又一具體實施例之均溫板毛細結構之製造方法之進一步之步驟流程圖。 FIG. 13 is a flow chart showing further steps of the method for manufacturing the capillary structure of the vapor chamber according to another embodiment of the present invention.

為了讓本發明的優點,精神與特徵可以更容易且明確地了解,後續將以實施例並參照所附圖式進行詳述與討論。值得注意的是,這些實施例僅為本發明代表性的實施例,其中所舉例的特定方法,裝置,條件,材質等並非用以限定本發明或對應的實施例。 In order for the advantages, spirit and features of the present invention to be more easily and clearly understood, the following will be detailed and discussed with reference to the accompanying drawings by way of embodiments. It should be noted that these embodiments are only representative embodiments of the present invention, and the specific methods, devices, conditions, materials, etc. exemplified therein are not intended to limit the present invention or the corresponding embodiments.

在本發明的描述中,需要理解的是,術語“縱向、橫向、上、下、前、後、左、右、頂、底、內、外”等指示的方位或位置關係為基於附圖所示的方位或位置關係,僅是為了便於描述本發明和簡化描述,而不是指示所述的裝置或元件必須具有特定的方位、以特定的方位構造和操作,因此不能理解為對本發明的限制。 In the description of the present invention, it should be understood that the orientation or positional relationship indicated by the terms "longitudinal, lateral, upper, lower, front, rear, left, right, top, bottom, inner, outer" etc. is based on the drawings. The orientation or positional relationship shown is only for the convenience of describing the present invention and simplifying the description, rather than indicating that the described device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the present invention.

此外,本發明裝置或元件前的不定冠詞“一”、“一種”和“一個”對裝置或元件的數量要求(即出現次數)無限制性。因此“一”應被解讀為包括一或至少一,並且單數形式的裝置或元件也包括複數形式,除非所述數量明顯指單數形式。 Furthermore, the indefinite articles "a", "an" and "an" preceding a device or element of the present invention are not limiting on the quantitative requirement (ie, the number of occurrences) of the device or element. Thus "a" should be read to include one or at least one, and a device or element in the singular also includes the plural unless the number clearly refers to the singular.

為便於說明,後續部分之圖式(如圖2、圖4、圖6)及實施例以第一基板及第一支撐結構為例。除非另行說明,第二基板及第二支撐結構和第一基板為相同製程或結構。 For convenience of description, the drawings (as shown in FIG. 2 , FIG. 4 , and FIG. 6 ) and the embodiments in the following sections take the first substrate and the first support structure as examples. Unless otherwise stated, the second substrate and the second support structure are the same process or structure as the first substrate.

在一種製作大功率均溫板元件之實施例中,大功率均溫板元 件之厚度介於1.0mm~3.0mm之間,並以沖壓的方式將製作具有凹陷溝槽結構之銅基板。預製複數個銅支撐柱;也預製高度與銅支撐柱相同的複數個環形燒結毛細結構件,再將環型毛細結構件一個一個的套住銅支撐柱,形成具毛細結構之銅支撐柱。接著再將具毛細結構之銅支撐柱一個一個圖形化地設置於基板上。最後在兩片銅基板之凹陷溝槽結構中舖置銅粉並燒結成多孔隙毛細結構,同時,蓋合後的兩片基板之間具有相連結的毛細結構。然而,此實施例中將環型毛細結構件套入銅支撐柱的步驟或是圖形化設置銅支撐柱的步驟,都非常難實現自動化生產,進而耗費人力,成本居高不下。 In an embodiment of manufacturing a high-power temperature uniformity plate element, the high-power temperature uniformity plate element The thickness of the piece is between 1.0mm and 3.0mm, and a copper substrate with a recessed groove structure is produced by stamping. A plurality of copper support columns are prefabricated; a plurality of annular sintered capillary structures with the same height as the copper support columns are also prefabricated, and then the annular capillary structures are wrapped around the copper support columns one by one to form a copper support column with a capillary structure. Then, copper support pillars with capillary structures are patterned one by one on the substrate. Finally, copper powder is placed in the concave groove structure of the two copper substrates and sintered to form a porous capillary structure. However, in this embodiment, the step of inserting the ring-shaped capillary structure into the copper support column or the step of patterning the copper support column is very difficult to realize automatic production, which is labor-intensive and high cost.

請參閱圖1及圖2,圖1係繪示本發明之一具體實施例之均溫板毛細結構之製造方法之步驟流程圖。圖2係根據圖1之流程所繪示之示意圖。如圖1及圖2所示,本發明之大功率均溫板結構之製造方法,應用於製作均溫板元件之毛細結構支撐柱,本製造方法包含以下步驟:步驟S1:提供第一基板1,第一基板之第一表面11上具有第一支撐結構12。步驟S2:提供第二基板2,第二基板之第二表面21上具有對應第一支撐結構12之第二支撐結構22。步驟S3:分別舖置並包覆毛細結構漿料3於第一支撐結構12和第二支撐結構22。步驟S4:加熱毛細結構漿料3以形成包覆第一支撐結構11之第一毛細結構31,以及包覆第二支撐結構22之第二毛細結構32。步驟S5:封合第一基板11與第二基板21之周緣形成均溫板結構5,且第一支撐結構12和第二支撐結構22透過第一毛細結構31和第二毛細結構32互相抵頂。其中,步驟S5於封合第一基板與第二基板之前,第一基板與第二基板各自的內表面上已經形成毛細結構。 Please refer to FIG. 1 and FIG. 2 . FIG. 1 is a flow chart showing the steps of a method for manufacturing a capillary structure of a vapor chamber according to an embodiment of the present invention. FIG. 2 is a schematic diagram according to the flow chart of FIG. 1 . As shown in FIG. 1 and FIG. 2 , the manufacturing method of the high-power vapor chamber structure of the present invention is applied to manufacture the capillary structure support column of the vapor chamber element. The manufacturing method includes the following steps: Step S1 : providing a first substrate 1 , a first support structure 12 is provided on the first surface 11 of the first substrate. Step S2 : providing a second substrate 2 with a second support structure 22 corresponding to the first support structure 12 on the second surface 21 of the second substrate. Step S3 : respectively laying and coating the capillary structure slurry 3 on the first support structure 12 and the second support structure 22 . Step S4 : heating the capillary structure slurry 3 to form a first capillary structure 31 covering the first support structure 11 and a second capillary structure 32 covering the second support structure 22 . Step S5 : sealing the periphery of the first substrate 11 and the second substrate 21 to form the temperature chamber structure 5 , and the first support structure 12 and the second support structure 22 abut against each other through the first capillary structure 31 and the second capillary structure 32 . Wherein, in step S5, before sealing the first substrate and the second substrate, capillary structures have been formed on the respective inner surfaces of the first substrate and the second substrate.

深入解釋步驟流程如圖2所示,首先,第一基板1之第一表面11上設置有複數個第一支撐結構12。接著,將鋼板33放置在第一基板1上,使用刮刀34以箭頭方向刮動毛細結構漿料3。此時,毛細結構漿料3會穿過鋼板33上之孔洞,進而被鋪置至第一支撐結構12外層。鋪置完成後,將外層含有毛細結構漿料3的第一支撐結構12,以不同溫度進行加熱、烘烤及燒結。最後形成第一毛細結構31。其中,第二基板2之第二支撐結構22和第一基板之第一支撐結構12為相同製程或結構。 In-depth explanation of the step flow is shown in FIG. 2 . First, a plurality of first support structures 12 are disposed on the first surface 11 of the first substrate 1 . Next, the steel plate 33 is placed on the first substrate 1 , and the capillary structure slurry 3 is scraped in the direction of the arrow using the scraper 34 . At this time, the capillary structure slurry 3 will pass through the holes on the steel plate 33 and then be laid on the outer layer of the first support structure 12 . After the placement is completed, the first support structure 12 whose outer layer contains the capillary structure slurry 3 is heated, baked and sintered at different temperatures. Finally, the first capillary structure 31 is formed. Wherein, the second support structure 22 of the second substrate 2 and the first support structure 12 of the first substrate have the same process or structure.

當第一基板1和第二基板2的毛細結構相互連接時,產生了可輸送液相工作流體之毛細通道。毛細通道使未接觸熱源的基板上的冷凝區毛細結構中的液相工作流體能回流至接觸熱源的基板上的吸熱區毛細結構中,以利工作流體再次變化為氣相。 When the capillary structures of the first substrate 1 and the second substrate 2 are connected to each other, capillary channels that can transport the liquid-phase working fluid are created. The capillary channel enables the liquid-phase working fluid in the condensing zone capillary structure on the substrate not contacting the heat source to flow back into the heat-absorbing zone capillary structure on the substrate contacting the heat source, so that the working fluid changes to gas phase again.

本發明是以毛細結構漿料於基板表面上的支撐結構進行舖置,用以形成均溫板之毛細結構。相較於前述預製並套合銅支撐柱和環形燒結毛細結構件之實施例,本發明毛細力也相較於以銅粉構成之毛細結構較佳。因此本發明增加均溫板導熱之效率,進而有較好的散熱功效,並且節省人力成本、提升產品良率以及提升生產產率。 In the present invention, the support structure of the capillary structure slurry is laid on the surface of the substrate to form the capillary structure of the temperature chamber. Compared with the above-mentioned embodiment of prefabricating and sheathing the copper support column and the annular sintered capillary structure, the capillary force of the present invention is also better than that of the capillary structure formed of copper powder. Therefore, the present invention increases the heat conduction efficiency of the vapor chamber, thereby having better heat dissipation effect, saving labor costs, improving product yield and improving production yield.

此外,第一基板1可以是銅或銅金屬。毛細結構漿料3包含有銅粉末、有機溶劑、銅氧化物粉末及聚合物。當加熱烘烤時,毛細結構漿料3中的有機溶劑及聚合物將先被去除,接著加熱燒結形成第一毛細結構31。其中有機溶劑與聚合物形成膠體(Colloid),用以分散及懸浮銅粉末以形成毛細結構漿料3,以便於第一基板1或第一基板1之第一表面上的第一支撐結構12,鋪置毛細結構漿料3並加工製作成第一毛細結構31。有機溶劑可以 為醇類溶劑,而聚合物可以為天然樹脂(Natural Resin)或合成樹脂(Synthetic Resin)。 Furthermore, the first substrate 1 may be copper or copper metal. The capillary structure paste 3 contains copper powder, organic solvent, copper oxide powder and polymer. During heating and baking, the organic solvent and polymer in the capillary structure slurry 3 will be removed first, and then the first capillary structure 31 is formed by heating and sintering. The organic solvent and the polymer form a colloid for dispersing and suspending the copper powder to form the capillary structure slurry 3, so as to facilitate the first substrate 1 or the first support structure 12 on the first surface of the first substrate 1, The capillary structure slurry 3 is laid and processed to form the first capillary structure 31 . Organic solvents can It is an alcohol solvent, and the polymer can be a natural resin (Natural Resin) or a synthetic resin (Synthetic Resin).

上述實施例中描述在支撐結構上鋪設毛細結構之方式,然而,本發明並不限定在基板表面上鋪設毛細結構之方式,亦可以使用銅網、銅粉等方式鋪設。再另一具體實施例中,在基板表面鋪設毛細結構之方式如下。請參閱圖3及圖4,圖3係繪示根據圖1之另一具體實施例之步驟流程圖。圖4係繪示根據圖3之流程所繪示之示意圖。本具體實施例中,均溫板毛細結構之製作方法進一步包含以下步驟,步驟S6:舖置銅粉末4於第一表面上11。步驟S7:燒結銅粉末4以形成覆蓋第一表面11且連結第一毛細結構31之第一銅粉末燒結毛細結構41。本實施例之流程是先依序進行步驟S1、步驟S2、步驟S3及步驟S4,接著,進行步驟S6及步驟S7。最後,再進行步驟S5。 The above embodiments describe the method of laying the capillary structure on the support structure. However, the present invention is not limited to the method of laying the capillary structure on the surface of the substrate, and copper mesh, copper powder, etc. can also be used for laying. In yet another specific embodiment, the manner of laying the capillary structure on the surface of the substrate is as follows. Please refer to FIG. 3 and FIG. 4 . FIG. 3 is a flow chart of steps according to another specific embodiment of FIG. 1 . FIG. 4 is a schematic diagram according to the process shown in FIG. 3 . In this embodiment, the method for fabricating the capillary structure of the vapor chamber further includes the following steps, step S6 : laying the copper powder 4 on the first surface 11 . Step S7 : sintering the copper powder 4 to form the first copper powder sintering capillary structure 41 covering the first surface 11 and connecting the first capillary structure 31 . The process of this embodiment is to perform step S1 , step S2 , step S3 and step S4 in sequence, and then perform step S6 and step S7 . Finally, step S5 is performed again.

如圖4所示,首先,第一基板1之第一表面11上設置有複數個第一支撐結構12。將鋼板33放置在第一基板1上。接著,使用刮刀34以鋼版印刷的方式刮動毛細結構漿料3。此時,毛細結構漿料3會穿過鋼板33上之孔洞,進而被鋪置至第一支撐結構12外層。鋪置完成後,將外層含有毛細結構漿料3的第一支撐結構12,進行不同溫度之加熱、烘烤及燒結。形成第一毛細結構31。接著,再鋪置銅粉末4在第一基板1之第一表面11上,進行不同溫度之加熱、烘烤及燒結,進而形成第一銅粉末燒結毛細結構41。其中,第二基板之第二支撐結構22和第一基板之第一支撐結構12為相同製程或結構。上述之銅粉末4經加熱後形成第一銅粉末燒結毛細結構41。使用銅粉末4燒結成第一銅粉末燒結毛細結構41之材料成本低,但需要額外鋪設製 程,耗費能量高,且銅粉末毛細結構之厚度較小。此外,第一銅粉末燒結毛細結構41與第一毛細結構31為連續的平面,可使工作流體於均溫板內連續地輸送。 As shown in FIG. 4 , first, a plurality of first support structures 12 are disposed on the first surface 11 of the first substrate 1 . The steel plate 33 is placed on the first substrate 1 . Next, the capillary structure paste 3 is scraped by stencil printing using a doctor blade 34 . At this time, the capillary structure slurry 3 will pass through the holes on the steel plate 33 and then be laid on the outer layer of the first support structure 12 . After the laying is completed, the first support structure 12 whose outer layer contains the capillary structure slurry 3 is heated, baked and sintered at different temperatures. The first capillary structure 31 is formed. Next, the copper powder 4 is placed on the first surface 11 of the first substrate 1 to perform heating, baking and sintering at different temperatures, thereby forming the first copper powder sintered capillary structure 41 . Wherein, the second support structure 22 of the second substrate and the first support structure 12 of the first substrate are of the same process or structure. The above-mentioned copper powder 4 is heated to form a first copper powder sintered capillary structure 41 . Using the copper powder 4 to sinter into the first copper powder sintered capillary structure 41 has low material cost, but requires additional laying and fabrication. process, high energy consumption, and the thickness of the copper powder capillary structure is small. In addition, the first copper powder sintered capillary structure 41 and the first capillary structure 31 are continuous planes, so that the working fluid can be continuously transported in the vapor chamber.

除了上述之製作方法外,為達此目的,本領域之通常知識者可自行調整最適合的製程方式,並不以上述順序為限。亦可為步驟S1、步驟S2、步驟S6、步驟S7、步驟S3、步驟S4、步驟S5的順序,亦即,先進行步驟S6於第一基板之第一表面上舖置銅粉末及步驟S7的燒結後,再進行步驟S3的舖置毛細結構漿料於第一支撐結構。 In addition to the above-mentioned manufacturing methods, for this purpose, those skilled in the art can adjust the most suitable manufacturing method by themselves, and the above-mentioned order is not limited. The sequence of step S1, step S2, step S6, step S7, step S3, step S4, step S5 can also be used, that is, step S6 is first performed to lay copper powder on the first surface of the first substrate and step S7 is performed. After sintering, step S3 of laying the capillary structure slurry on the first support structure is performed.

於另一具體實施例,則是以毛細結構漿料3同時舖置基板表面以及支撐結構,詳細步驟於下述實施例說明。請合併參閱圖5及圖6,圖5係繪示本發明之又一具體實施例之步驟流程圖。圖6係根據圖5之流程所繪示之示意圖。如圖5及圖6所示,於舖置之步驟S3中,進一步包含以下子步驟:步驟S31:分別舖置毛細結構漿料3於第一表面11與第二表面21上,且毛細結構漿料3包覆第一支撐結構12和第二支撐結構22。另外,加熱之步驟S4進一步包含以下子步驟:步驟S41:加熱毛細結構漿料3以形成覆蓋第一表面11且包覆第一支撐結構12之第一毛細結構31,以及覆蓋第二表面21且包覆第二支撐結構22之第二毛細結構32。其中,毛細結構漿料具有流動性與黏滯性,使其能完整包覆基板及基板表面上的支撐結構以形成毛細結構。其中,第二支撐結構22的製作方法與第一支撐結構11的製作方法相同,故於此不再贅述。 In another specific embodiment, the capillary structure slurry 3 is used to lay the substrate surface and the supporting structure at the same time. The detailed steps are described in the following embodiments. Please refer to FIG. 5 and FIG. 6 together. FIG. 5 is a flow chart illustrating the steps of another specific embodiment of the present invention. FIG. 6 is a schematic diagram according to the flowchart of FIG. 5 . As shown in FIG. 5 and FIG. 6 , the laying step S3 further includes the following sub-steps: Step S31 : laying the capillary structure slurry 3 on the first surface 11 and the second surface 21 respectively, and the capillary structure slurry The material 3 covers the first support structure 12 and the second support structure 22 . In addition, the heating step S4 further includes the following sub-steps: step S41 : heating the capillary structure slurry 3 to form a first capillary structure 31 covering the first surface 11 and covering the first support structure 12 , and covering the second surface 21 and The second capillary structure 32 covering the second support structure 22 is covered. Among them, the capillary structure slurry has fluidity and viscosity, so that it can completely coat the substrate and the supporting structure on the surface of the substrate to form the capillary structure. The fabrication method of the second support structure 22 is the same as the fabrication method of the first support structure 11 , so it will not be repeated here.

於圖6實施例中顯示,毛細結構漿料3覆蓋第一基板1之第一表面11與第一表面11上的第一支撐結構12,接著,加熱形成包覆於第一表 面11與第一支撐結構12形成第一毛細結構31。相對應,毛細結構漿料3覆蓋第二基板2之第二表面21與第二表面21上的第二支撐結構211,接著,加熱形成包覆第二表面21與第二支撐結構211形成第二毛細結構32。基板表面與支撐結構同樣鋪設毛細結構漿料形成毛細結構,相較於鋪設銅粉末或銅網等其他方式,可以減少額外的工序,一次完成鋪設或燒結。 As shown in the embodiment of FIG. 6 , the capillary structure slurry 3 covers the first surface 11 of the first substrate 1 and the first support structure 12 on the first surface 11 , and then is heated to form a coating on the first surface. The surface 11 and the first support structure 12 form a first capillary structure 31 . Correspondingly, the capillary structure slurry 3 covers the second surface 21 of the second substrate 2 and the second support structure 211 on the second surface 21 , and then is heated to cover the second surface 21 and the second support structure 211 to form the second support structure 211 . Capillary structure 32 . The surface of the substrate and the support structure are also laid with capillary structure slurry to form a capillary structure. Compared with other methods such as laying copper powder or copper mesh, additional processes can be reduced, and the laying or sintering can be completed at one time.

在習知技術中,製作大功率均溫板內的毛細結構層是利用石墨治具壓合進行燒結製程。以及製作支撐結構的毛細結構是以銅粉的手工舖置以及燒結製程。因此,均溫板之毛細結構的製作變得複雜且不利量產上的自動化作業,並且毛細力往往不足。本發明則是以毛細結構漿料於基板表面上的支撐結構進行舖置,用以形成均溫板之毛細結構,其毛細力也相較於以銅粉構成之毛細結構較佳,而增加均溫板導熱之效率,進而有較好的散熱功效,並且節省人力成本、提升產品良率以及提升生產產率。 In the prior art, the capillary structure layer in the high-power vapor chamber is made by pressing a graphite jig to perform a sintering process. And the capillary structure for making the support structure is a manual laying and sintering process of copper powder. Therefore, the fabrication of the capillary structure of the vapor chamber becomes complicated, which is not conducive to the automation of mass production, and the capillary force is often insufficient. In the present invention, the support structure of the capillary structure slurry is laid on the surface of the substrate to form the capillary structure of the temperature equalizing plate. The efficiency of heat conduction of the board, and then have better heat dissipation effect, and save labor costs, improve product yield and improve production yield.

請合併參閱圖7、圖8及圖9,圖7係繪示本發明之又一具體實施例之步驟流程圖。圖8係繪示本發明之一具體實施例之均溫板之第一基板和第二基板之俯視圖。圖9係繪示本發明之另一具體實施例之均溫板之第一基板和第二基板之俯視圖。如圖7所示,提供第一基板之步驟S1進一步包含有以下子步驟:步驟S11:提供具有第一凹槽於第一表面之第一基板。步驟S12:圖形化地舖置一支撐結構漿料於第一凹槽內。以及步驟S13:加熱支撐結構漿料以形成圖形化之第一支撐結構。其中,支撐結構漿料6之金屬固含量相對毛細結構漿料3高、流動力較低。支撐結構漿料6被加熱固化後,形成緻密、極低孔隙率之第一支撐結構12。第一支撐結構12具有堅固的支撐力,利於均溫板不易因氣壓差而崩塌。其中,以支撐結構漿料固化形成 之第一支撐結構,有利於彈性調整支撐結構之形狀,用以提升均溫板之散熱功效。 Please refer to FIG. 7 , FIG. 8 and FIG. 9 together. FIG. 7 is a flow chart showing the steps of another specific embodiment of the present invention. 8 is a top view of the first substrate and the second substrate of the vapor chamber according to an embodiment of the present invention. FIG. 9 is a top view of the first substrate and the second substrate of the vapor chamber according to another embodiment of the present invention. As shown in FIG. 7 , the step S1 of providing the first substrate further includes the following sub-steps: Step S11 : providing a first substrate having a first groove on the first surface. Step S12: Graphically laying a support structure slurry in the first groove. and step S13 : heating the support structure slurry to form a patterned first support structure. Wherein, the metal solid content of the support structure slurry 6 is higher than that of the capillary structure slurry 3, and the fluidity is lower. After the support structure slurry 6 is heated and solidified, a dense and extremely low porosity first support structure 12 is formed. The first supporting structure 12 has a strong supporting force, which is beneficial for the vapor chamber to not collapse due to the difference in air pressure. Among them, it is formed by curing the supporting structure slurry The first support structure is beneficial to elastically adjust the shape of the support structure, so as to improve the heat dissipation effect of the temperature equalizing plate.

其中,圖形化之支撐結構中,包含有不同形狀與排列組成之均溫板。如圖8及圖9所示,第一基板1又包含有吸熱端51與冷凝端52,於吸熱端51工作流體吸收熱源後,從液相轉變成氣相。接著,氣相之工作流體再於冷凝端52從氣相轉變成液相,進而可達到液體-氣體循環之作動,而增加均溫板散熱的功效。圖8和圖9之第一基板1和第二基板2原則上為鏡像對稱,吸熱端51與冷凝端52亦為對稱。 Among them, the patterned support structure includes temperature chambers of different shapes and arrangements. As shown in FIG. 8 and FIG. 9 , the first substrate 1 further includes an endothermic end 51 and a condensing end 52 . After the endothermic end 51 absorbs the heat source, the working fluid changes from liquid phase to gas phase. Then, the working fluid in the gas phase is transformed from the gas phase to the liquid phase at the condensing end 52 , so that the liquid-gas circulation can be achieved, thereby increasing the heat dissipation effect of the vapor chamber. The first substrate 1 and the second substrate 2 in FIGS. 8 and 9 are in principle mirror-symmetrical, and the heat-absorbing end 51 and the condensation end 52 are also symmetrical.

然而圖形化之支撐結構中,包含有柱狀與牆狀兩種不同形狀的支撐結構,並且於外層舖置毛細結構後,分別形成柱狀結構61與牆狀結構62。柱狀結構是毛細結構鋪設在柱狀支撐結構之外;牆狀結構是毛細結構鋪設在牆狀支撐結構之外。不同形狀的支撐結構排列與位置將有利於工作流體之液體-氣體循環之作動。其柱狀支撐結構61有利於氣相之工作流體垂直輸送,牆狀的毛細支撐結構62有利於冷凝後之液相工作流體水平輸送,因此圖形化之支撐結構可加速均溫板熱傳導速率以達成均溫之效果。尤其如圖9放射狀的支撐結構,自吸熱端氣化的工作流體會順著支撐結構向外衝出,自冷凝端液化的工作流體會順著支撐結構向吸熱端流動,據此,有效地增加散熱解熱的效率。 However, in the patterned support structure, there are two different shapes of support structures, a column shape and a wall shape, and after the capillary structure is laid on the outer layer, a column structure 61 and a wall structure 62 are respectively formed. The columnar structure is that the capillary structure is laid outside the columnar support structure; the wall-like structure is that the capillary structure is laid outside the wall-like support structure. The arrangement and location of the support structures of different shapes will facilitate the actuation of the liquid-gas circulation of the working fluid. The column-shaped support structure 61 is conducive to the vertical transport of the gas phase working fluid, and the wall-shaped capillary support structure 62 is beneficial to the horizontal transport of the liquid-phase working fluid after condensation. Therefore, the patterned support structure can accelerate the heat transfer rate of the vapor chamber to achieve The effect of temperature uniformity. Especially in the radial support structure shown in Figure 9, the working fluid vaporized from the heat-absorbing end will rush out along the support structure, and the working fluid liquefied from the condensing end will flow along the support structure to the heat-absorbing end. Increase the efficiency of heat dissipation and heat dissipation.

請參閱圖10及圖11,圖10係繪示本發明之又一具體實施例之步驟流程圖。圖11係根據圖10之部分步驟流程所繪示之示意圖。如圖10及圖11所示,加熱毛細結構漿料之步驟S4進一步包含有以下子步驟:步驟S42:加熱烘烤毛細結構漿料3以去除溶劑而形成一固化體35。步驟S43:加 熱固化體以裂解並去除聚合物。以及步驟S44:加熱並燒結金屬粉末以形成包覆第一支撐結構之第一毛細結構31,以及包覆第二支撐結構22之第二毛細結構32。其中,於高溫加熱固化體時,聚合物會先被分解消除,留下熔點較高的銅粉末和粉末間隙。在高溫加熱過程中,銅粉末和粉末間隙再進一步形成多孔隙的毛細結構。 Please refer to FIG. 10 and FIG. 11 . FIG. 10 is a flow chart showing the steps of another specific embodiment of the present invention. FIG. 11 is a schematic diagram according to a part of the step flow of FIG. 10 . As shown in FIG. 10 and FIG. 11 , the step S4 of heating the capillary structure slurry further includes the following sub-steps: Step S42 : heating and baking the capillary structure slurry 3 to remove the solvent to form a solidified body 35 . Step S43: add Thermally cured to cleave and remove polymer. And step S44 : heating and sintering the metal powder to form the first capillary structure 31 covering the first support structure and the second capillary structure 32 covering the second support structure 22 . Among them, when the solidified body is heated at a high temperature, the polymer will be decomposed and eliminated first, leaving copper powder and powder gaps with a higher melting point. During the high temperature heating process, the copper powder and the powder gap further form a porous capillary structure.

於封合第一基板與第二基板之周緣之步驟之後,進一步包含步驟S8:加工均溫板結構形成均溫板。請參閱圖12,圖12係繪示本發明之一具體實施例之均溫板毛細結構之製造方法之進一步之步驟流程圖。如圖12所示,步驟S8又進一步包含步驟S80:注入工作流體於均溫板結構之內。步驟S81:抽出均溫板結構內之空氣以形成容納工作流體、第一毛細結構和第二毛細結構之一負壓空腔。步驟S82:氣密封合該均溫板結構。除了上述之製作方法外,為達此目的,本領域之通常知識者可自行調整最適合的製程方式,並不以上述方法為限。 After the step of sealing the periphery of the first substrate and the second substrate, the step S8 is further included: processing the vapor chamber structure to form a vapor chamber. Please refer to FIG. 12 . FIG. 12 is a flow chart showing further steps of the method for manufacturing the capillary structure of the vapor chamber according to an embodiment of the present invention. As shown in FIG. 12 , step S8 further includes step S80 : injecting the working fluid into the vapor chamber structure. Step S81 : extracting the air in the vapor chamber structure to form a negative pressure cavity containing the working fluid, the first capillary structure and the second capillary structure. Step S82: Hermetically seal the vapor chamber structure. In addition to the above-mentioned manufacturing methods, for this purpose, those skilled in the art can adjust the most suitable manufacturing method by themselves, and are not limited to the above-mentioned methods.

均溫板的基板表面上除了有支撐結構外,還包含了環狀漿料牆,詳細步驟如下實施例說明。請參閱圖13。圖13係繪示本發明之一具體實施例之均溫板毛細結構之製造方法之進一步之步驟流程圖。均溫板毛細結構之製造方法進一步包含有下列步驟:步驟S9:環形舖置一緻密牆漿料於第一基板之周緣以形成一漿料牆。步驟S10:加熱漿料牆以形成一緻密結構牆,緻密結構牆內形成第一凹槽。如圖13之實施例,先依序進行步驟S1及S2,接著,進行步驟S9及步驟S10,之後再進行步驟S3、步驟S4及步驟S5。其中,緻密牆漿料與前述所述之支撐結構漿料可以是同一種漿料,其用於支撐兩個基板,並且還能作為均溫板的側牆體。於另一具體實施例,亦可 先依照步驟S9、步驟S10、步驟S1、步驟S2、步驟S3、步驟S4、步驟S5的順序進行。其中,緻密牆漿料同樣鋪製再第二基板,且舖置第一基板及第二基板之順序並不設限。除了上述之製作方法外,為達此目的,本領域之通常知識者可自行調整最適合的製程方式,並不以上述方法為限。本發明之製作方法藉由同步進行烘烤及燒結固化漿料牆,用以防止毛細結構漿料溢出,取代習知技術以金屬溝槽之製作方式,藉以節省製作工時以及節省烘烤及加熱所需要的設備投資及熱能成本。 In addition to the support structure, the substrate surface of the temperature chamber also includes an annular slurry wall. The detailed steps are described in the following examples. See Figure 13. FIG. 13 is a flow chart showing further steps of the method for manufacturing the capillary structure of the vapor chamber according to an embodiment of the present invention. The method for manufacturing the capillary structure of the vapor chamber further includes the following steps: Step S9 : annularly laying a dense wall slurry on the periphery of the first substrate to form a slurry wall. Step S10 : heating the slurry wall to form a dense structure wall, and forming a first groove in the dense structure wall. In the embodiment of FIG. 13 , steps S1 and S2 are performed in sequence, then steps S9 and S10 are performed, and then steps S3 , S4 and S5 are performed. Wherein, the dense wall slurry and the aforementioned support structure slurry can be the same slurry, which is used to support two substrates, and can also be used as the side wall of the soaking plate. In another specific embodiment, it can also be First, follow the order of step S9, step S10, step S1, step S2, step S3, step S4, and step S5. Wherein, the dense wall paste is also laid on the second substrate, and the order of laying the first substrate and the second substrate is not limited. In addition to the above-mentioned manufacturing methods, for this purpose, those skilled in the art can adjust the most suitable manufacturing method by themselves, and are not limited to the above-mentioned methods. The manufacturing method of the present invention uses simultaneous baking and sintering to solidify the slurry wall to prevent the capillary structure slurry from overflowing, replacing the conventional manufacturing method of metal grooves, thereby saving manufacturing time and saving baking and heating The required equipment investment and thermal energy costs.

此外,緻密結構牆之厚度也可由毛細結構漿料3的固含量及金屬粉末的物理特性所決定。 In addition, the thickness of the dense structure wall can also be determined by the solid content of the capillary structure slurry 3 and the physical properties of the metal powder.

綜上所述,本發明之方法藉由鋪置並加熱毛細結構漿料於第一支撐結構及第二支撐結構上,以進一步形成多孔隙的第一毛細結構及第二毛細結構,解決了大功率均溫板之兩面工作流體分布不均勻以及容易坍塌變形之問題,同時以印刷方式鋪置毛細結構漿料,也降低並節省製作大功率均溫板之成本。另外,本發明係以增材的方式將緻密牆漿料鋪置於第一基板之第一表面上,並加熱形成緻密結構牆。此緻密結構牆可於基板表面上形成溝槽,進而取代現有以蝕刻製程於金屬片材上形成溝槽,以大幅降低製作成本。此外,利用印刷漿料形成毛細結構有利於大量生產時之效率並降低生產成本。並且,藉此方法做出來的均溫板,可具有圖形化設計的內部空腔以利工作流體流通。 To sum up, the method of the present invention solves the problem of large problems by laying and heating the capillary structure slurry on the first support structure and the second support structure to further form the porous first capillary structure and the second capillary structure. The problem of uneven distribution of the working fluid on both sides of the power vapor chamber and easy collapse and deformation. At the same time, the capillary structure paste is laid by printing, which also reduces and saves the cost of making high-power vapor chambers. In addition, in the present invention, the dense wall slurry is deposited on the first surface of the first substrate in an additive manner, and heated to form a dense structure wall. The dense structure wall can form grooves on the surface of the substrate, thereby replacing the existing etching process to form the grooves on the metal sheet, so as to greatly reduce the manufacturing cost. In addition, the use of printing paste to form the capillary structure facilitates mass production efficiency and reduces production costs. Moreover, the vapor chamber made by this method can have a patterned interior cavity to facilitate the circulation of the working fluid.

以模具舖置燒結製作環狀毛細結構件,再套合銅支撐柱之工藝流程需耗費大量的人力成本。本發明之大功率均溫板結構之製作方法提供了包含有以毛細結構漿料舖置的均溫板支撐結構。本發明中之支撐結構 可由自動化印刷的方式舖置。藉此,可以在設計上更有彈性,並且更有效率的量產含有毛細結構支撐柱之大功率均溫板。 The process of manufacturing the annular capillary structure by die laying and sintering, and then fitting the copper support column requires a lot of labor costs. The manufacturing method of the high-power vapor chamber structure of the present invention provides a vapor chamber support structure comprising a capillary structure slurry laid. Support structure in the present invention It can be laid by automatic printing. Thereby, the design can be more flexible, and the high-power vapor chamber containing the capillary structure support column can be mass-produced more efficiently.

藉由以上較佳具體實施例之詳述,係希望能更加清楚描述本發明之特徵與精神,而並非以上述所揭露的較佳具體實施例來對本發明之範疇加以限制。相反地,其目的是希望能涵蓋各種改變及具相等性的安排於本發明所欲申請之專利範圍的範疇內。因此,本發明所申請之專利範圍的範疇應該根據上述的說明作最寬廣的解釋,以致使其涵蓋所有可能的改變以及具相等性的安排。 Through the detailed description of the preferred embodiments above, it is hoped that the features and spirit of the present invention can be described more clearly, and the scope of the present invention is not limited by the preferred embodiments disclosed above. On the contrary, the intention is to cover various modifications and equivalent arrangements within the scope of the claimed scope of the present invention. Therefore, the scope of the patentable scope for which the present invention is claimed should be construed in the broadest sense in accordance with the above description so as to encompass all possible modifications and equivalent arrangements.

S1~S5:步驟 S1~S5: Steps

Claims (10)

一種大功率均溫板結構的製造方法,其步驟包含有: A method for manufacturing a high-power vapor chamber structure, the steps comprising: 提供一第一基板,該第一基板之一第一表面上具有一第一支撐結構; providing a first substrate with a first support structure on a first surface of the first substrate; 提供一第二基板,該第二基板之一第二表面上具有對應該第一支撐結構之一第二支撐結構; providing a second substrate, a second surface of the second substrate has a second support structure corresponding to the first support structure; 分別舖置並包覆一毛細結構漿料於該第一支撐結構和該第二支撐結構; respectively laying and coating a capillary structure slurry on the first support structure and the second support structure; 加熱該毛細結構漿料以形成包覆該第一支撐結構之一第一毛細結構,以及包覆該第二支撐結構之一第二毛細結構;以及 heating the capillary structure slurry to form a first capillary structure covering the first support structure, and a second capillary structure covering the second support structure; and 封合該第一基板與該第二基板之周緣形成一均溫板結構,且該第一支撐結構和該第二支撐結構透過該第一毛細結構和該第二毛細結構互相抵頂。 The peripheral edges of the first substrate and the second substrate are sealed to form an isothermal plate structure, and the first support structure and the second support structure abut against each other through the first capillary structure and the second capillary structure. 如申請專利範圍第1項所述之製造方法,其中分別舖置該毛細結構漿料之步驟進一步包含有以下子步驟: The manufacturing method described in claim 1, wherein the step of laying the capillary structure slurry respectively further comprises the following sub-steps: 分別舖置該毛細結構漿料於該第一表面與該第二表面上,且該毛細結構漿料包覆該第一支撐結構和該第二支撐結構。 The capillary structure slurry is respectively laid on the first surface and the second surface, and the capillary structure slurry covers the first support structure and the second support structure. 如申請專利範圍第2項所述之製造方法,其中加熱該毛細結構漿料之步驟進一步包含有以下子步驟: The manufacturing method as described in claim 2, wherein the step of heating the capillary structure slurry further comprises the following sub-steps: 加熱該毛細結構漿料以形成覆蓋該第一表面且包覆該第一支撐結構之一第一毛細結構,以及覆蓋該第二表面且包覆該第二支撐結構之一第二毛細結構。 The capillary structure slurry is heated to form a first capillary structure covering the first surface and covering the first support structure, and a second capillary structure covering the second surface and covering the second support structure. 如申請專利範圍第1項所述之製造方法,進一步包含有下列步驟: The manufacturing method described in item 1 of the scope of the application further comprises the following steps: 舖置一銅粉末於該第一表面上;以及 laying a copper powder on the first surface; and 燒結該銅粉末以形成覆蓋該第一表面且連結該第一毛細結構之一第一銅粉末燒結毛細結構。 The copper powder is sintered to form a first copper powder sintered capillary structure covering the first surface and connecting the first capillary structure. 如申請專利範圍第1項所述之製造方法,其中提供該第一基板之步驟進一步包含有以下子步驟: The manufacturing method described in claim 1, wherein the step of providing the first substrate further includes the following sub-steps: 提供具有一第一凹槽於該第一表面之該第一基板; providing the first substrate with a first groove on the first surface; 圖形化地舖置一支撐結構漿料於該第一凹槽內;以及 patterningly placing a support structure slurry within the first groove; and 加熱該支撐結構漿料以形成圖形化之該第一支撐結構。 The support structure slurry is heated to form the patterned first support structure. 如申請專利範圍第1項所述之製造方法,其中該第一支撐結構進一步係為一第一圖形化金屬支撐結構。 The manufacturing method as described in claim 1, wherein the first support structure is further a first patterned metal support structure. 如申請專利範圍第1項所述之製造方法,其中該毛細結構漿料進一步包含有一金屬粉末、一溶劑和一聚合物,且加熱該毛細結構漿料之步驟進一步包含有下列子步驟: The manufacturing method of claim 1, wherein the capillary structure slurry further comprises a metal powder, a solvent and a polymer, and the step of heating the capillary structure slurry further comprises the following sub-steps: 加熱烘烤該毛細結構漿料以去除該溶劑而形成一固化體; heating and baking the capillary structure slurry to remove the solvent to form a solidified body; 加熱該固化體以裂解並去除該聚合物;以及 heating the solidified body to crack and remove the polymer; and 加熱並燒結該金屬粉末以形成包覆該第一支撐結構之該第一毛細結構,以及包覆該第二支撐結構之該第二毛細結構。 The metal powder is heated and sintered to form the first capillary structure that coats the first support structure, and the second capillary structure that coats the second support structure. 如申請專利範圍第1項所述之製造方法,進一步包含有下列步驟: The manufacturing method described in item 1 of the scope of the application further comprises the following steps: 環形舖置一緻密牆漿料於該第一基板之周緣以形成一漿料牆; annularly laying a dense wall slurry on the periphery of the first substrate to form a slurry wall; 加熱該漿料牆以形成一緻密結構牆,該緻密結構牆內形成一第一凹槽。 The slurry wall is heated to form a dense structure wall, and a first groove is formed in the dense structure wall. 如申請專利範圍第1項所述之製造方法,其中於封合該第一基板與該第二基板之周緣之步驟之後,進一步有一步驟: The manufacturing method according to item 1 of the claimed scope, wherein after the step of sealing the peripheries of the first substrate and the second substrate, there is a further step: 加工該均溫板結構形成一均溫板; processing the uniform temperature plate structure to form a uniform temperature plate; 此步驟進一步包含有下列子步驟: This step further contains the following sub-steps: 注入一工作流體於該均溫板結構之內; injecting a working fluid into the vapor chamber structure; 抽出該均溫板結構內之空氣以形成容納該工作流體、該第一毛細結構和該第二毛細結構之一負壓空腔;以及 extracting the air in the vapor chamber structure to form a negative pressure cavity containing the working fluid, the first capillary structure and the second capillary structure; and 氣密封合該均溫板結構。 Hermetically seal the vapor chamber structure. 如申請專利範圍第1項所述之製造方法,其中該均溫板結構用於進一步加工而製造一均溫板。 The manufacturing method as described in claim 1, wherein the vapor chamber structure is used for further processing to manufacture a vapor chamber.
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