TW202202472A - Breathable plug, substrate support assembly and shower plate - Google Patents
Breathable plug, substrate support assembly and shower plate Download PDFInfo
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- TW202202472A TW202202472A TW110119497A TW110119497A TW202202472A TW 202202472 A TW202202472 A TW 202202472A TW 110119497 A TW110119497 A TW 110119497A TW 110119497 A TW110119497 A TW 110119497A TW 202202472 A TW202202472 A TW 202202472A
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- peripheral surface
- outer peripheral
- honeycomb structure
- permeable plug
- air
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/10—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on aluminium oxide
- C04B35/111—Fine ceramics
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/10—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on aluminium oxide
- C04B35/111—Fine ceramics
- C04B35/117—Composites
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B38/00—Porous mortars, concrete, artificial stone or ceramic ware; Preparation thereof
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/85—Coating or impregnation with inorganic materials
- C04B41/87—Ceramics
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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Abstract
Description
本揭示係關於透氣性插銷以及具備此透氣性插銷而成之基板支撐組件。 The present disclosure relates to an air-permeable plug and a substrate support assembly provided with the air-permeable plug.
以往,於電漿蝕刻裝置、電漿CVD(化學氣相沈積,Chemical Vapor Deposition)裝置等半導體製造裝置中,如專利文獻1所示,係於被載置在基板支撐組件上之半導體晶圓等基板、與用以導入並向基板供給電漿生成用氣體之噴淋板(氣體分配板)之間,施加高頻電壓以成為電漿狀態,而在基板的表面進行成膜或是將形成於基板的表面之薄膜進行蝕刻。此基板支撐組件係於其厚度方向具備流路,且藉由將冷卻用氣體供給至此流路而抑制被處理構件W的溫度上升。
Conventionally, in a semiconductor manufacturing apparatus such as a plasma etching apparatus and a plasma CVD (Chemical Vapor Deposition) apparatus, as shown in
於半導體製造裝置的處理室內處理基板之情形下,係有從基板支撐組件的上側朝下側產生電弧放電,流路有時會成為放電的路徑。因此,為了不使流路成為放電的路徑,於專利文獻2中,係提出一種靜電吸附盤(基板支撐組件),其係將由多孔質的蜂巢結構所構成之陶瓷插銷裝著於流路。
When a substrate is processed in a processing chamber of a semiconductor manufacturing apparatus, an arc discharge occurs from the upper side of the substrate support member to the lower side, and the flow path may become a path of the discharge. Therefore, in order to prevent the flow path from becoming a path of discharge,
[先前技術文獻] [Prior Art Literature]
[專利文獻] [Patent Literature]
[專利文獻1]日本特開2018-162205號公報 [Patent Document 1] Japanese Patent Laid-Open No. 2018-162205
[專利文獻2]日本特開2019-165193號公報 [Patent Document 2] Japanese Patent Laid-Open No. 2019-165193
本揭示的透氣性插銷係具備緻密質陶瓷的蜂巢結構物,該緻密質陶瓷的蜂巢結構物係於軸向上具有複數個貫通孔。 The air-permeable plug of the present disclosure includes a honeycomb structure of dense ceramics, and the honeycomb structure of dense ceramics has a plurality of through holes in the axial direction.
本揭示的基板支撐組件,係具備靜電吸附構件以及透氣性插銷而成者;其中,上述靜電吸附構件係具有:基材,係由具有吸附有被處理構件之吸附面以及位於該吸附面的相反側之對向面之板狀的陶瓷所構成;內部電極,係位於該基材內;以及流路,係位於沿著前述基材的厚度方向;上述透氣性插銷係裝著於前述流路的內部。 The substrate support assembly of the present disclosure is provided with an electrostatic adsorption member and an air-permeable plug; wherein, the electrostatic adsorption member includes a base material having an adsorption surface on which the member to be processed is adsorbed, and an opposite side located on the adsorption surface. The inner electrode is located in the base material; and the flow path is located along the thickness direction of the base material; the gas-permeable plug is attached to the flow path. internal.
本揭示的噴淋板係具備:第2基材,其係由板狀的陶瓷所構成,該板狀的陶瓷在厚度方向上具有通過電漿生成用氣體之複數個第2流路;以及上述透氣性插銷,其係裝著於前述第2流路的內部。 The shower plate of the present disclosure includes: a second base material made of a plate-shaped ceramic having a plurality of second flow paths in the thickness direction through which the gas for plasma generation passes; and the above-mentioned An air-permeable plug is attached to the inside of the second flow path.
1:腔室 1: Chamber
2:噴淋板 2: spray plate
2a:擴散部 2a: Diffusion part
2b:氣體供給部 2b: Gas supply section
2c:第2流路 2c: 2nd flow path
2d:透氣性插銷 2d: breathable latch
3:基板支撐組件支撐部 3: Substrate support assembly support part
4:安裝部 4: Installation Department
5:絕緣部 5: Insulation part
6:支撐部 6: Support part
7:熱傳導部 7: Heat conduction part
8:靜電吸附部 8: Electrostatic adsorption part
8a:吸附面 8a: adsorption surface
8b:基材 8b: Substrate
8c:夾鉗電極(內部電極) 8c: Clamp electrode (internal electrode)
8d:流路 8d: flow path
9:接合層 9: Bonding layer
11:O型環 11: O-ring
13:透氣性插銷 13: Breathable latch
14:透氣性插銷 14: Breathable latch
15:高頻電源 15: High frequency power supply
16:蜂巢結構物 16: Honeycomb Structure
16a,16b:貫通孔 16a, 16b: Through hole
16c:外周側區域 16c: Peripheral side area
16d:內周側區域 16d: Inner peripheral area
16e:外周面 16e: Outer peripheral surface
16f:內周面 16f: Inner peripheral surface
17:觀察對象面 17: Observe the object face
18:稜線 18: Ridgeline
19:凹部 19: Recess
20:電漿處理裝置 20: Plasma processing device
圖1之(a)為顯示具備本揭示的透氣性插銷之電漿處理裝置的一部分之剖面圖,圖1之(b)為放大的A部分之剖面圖。 FIG. 1( a ) is a cross-sectional view showing a part of the plasma processing apparatus provided with the gas-permeable plug of the present disclosure, and FIG. 1( b ) is an enlarged cross-sectional view of the A part.
圖2為放大的配置於圖1所示之電漿處理裝置的內部之基板支撐組件之剖面圖。 FIG. 2 is an enlarged cross-sectional view of a substrate support assembly disposed inside the plasma processing apparatus shown in FIG. 1 .
圖3為顯示垂直於本揭示的透氣性插銷之軸向之剖面的一例之剖面圖。 3 is a cross-sectional view showing an example of a cross-section perpendicular to the axial direction of the air-permeable plug of the present disclosure.
圖4為顯示垂直於本揭示的透氣性插銷之軸向之剖面的另一例之剖面圖。 4 is a cross-sectional view showing another example of a cross-section perpendicular to the axial direction of the air-permeable plug of the present disclosure.
圖5為顯示垂直於本揭示的透氣性插銷之軸向之剖面的又另一例之剖面圖。 5 is a cross-sectional view showing yet another example of a cross-section perpendicular to the axial direction of the air-permeable plug of the present disclosure.
圖6之(A)為顯示形成於本揭示的透氣性插銷的貫通孔之部分截切立體圖,圖6之(B)為圖6之(A)所示的區域X之放大說明圖。 FIG. 6(A) is a partially cut-away perspective view showing a through hole formed in the air-permeable plug of the present disclosure, and FIG. 6(B) is an enlarged explanatory view of a region X shown in FIG. 6(A) .
以下係參照圖式來詳細說明本揭示之透氣性插銷的一例。惟於本說明書的全部圖式中,只要不會產生混淆,對於相同的部分即係附註相同的符號,並適時地省略其說明。 An example of the breathable plug of the present disclosure will be described in detail below with reference to the drawings. However, in all the drawings of this specification, as long as there is no confusion, the same symbols are attached to the same parts, and the descriptions thereof are omitted appropriately.
圖1為顯示具備本揭示的透氣性插銷之電漿處理裝置的一部分之剖面圖。圖2為配置在圖1所示之電漿處理裝置的內部之基板支撐組件經放大後之剖面圖。 FIG. 1 is a cross-sectional view showing a portion of a plasma processing apparatus provided with the gas-permeable plug of the present disclosure. FIG. 2 is an enlarged cross-sectional view of a substrate support member disposed inside the plasma processing apparatus shown in FIG. 1 .
圖1所示之電漿處理裝置20例如為電漿蝕刻裝置,其係於內部具備配置半導體晶圓等被處理構件W之腔室1,於腔室1內的上側配置有噴淋板2,於下側係對向地配置有基板支撐組件3。
The
噴淋板2係由板狀的陶瓷所構成之第2基材,其係具備擴散部2a以及氣體供給部2b;前述擴散部2a係用以擴散電漿生成用氣體G之內部空
間;前述氣體供給部2b係具有用以將電漿生成用氣體G供給至腔室1內之複數個第2流路2c。
The
此外,從氣體供給部2b通過第2流路2c被噴淋狀地排出之電漿生成用氣體G,係藉由從高頻電源15將高頻電力(RF)供給至基板支撐組件3而成為電漿,並形成電漿空間P。
In addition, the gas G for plasma generation that is discharged from the
在此,電漿生成用氣體G的例子可列舉:SF6、CF4、CHF3、ClF3、NF3、C4F8、HF等氟系氣體;Cl2、HCl、BCl3、CCl4等氯系氣體。 Here, examples of the gas G for plasma generation include fluorine-based gases such as SF 6 , CF 4 , CHF 3 , ClF 3 , NF 3 , C 4 F 8 , and HF; Cl 2 , HCl, BCl 3 , and CCl 4 . and other chlorine-based gases.
基板支撐組件3為具備安裝部4、絕緣部5、支撐部6、熱傳導部7及靜電吸附部8而成之靜電吸附盤,靜電吸附部8例如像圖2所示般,係隔著由聚矽氧接著劑所構成之接合層9而接合於熱傳導部7。
The
靜電吸附部8係具有:基材8b,其係由藉由靜電吸附力將矽晶圓等被處理構件W吸附於吸附面8a之板狀的陶瓷所構成;夾鉗電極(clamp electrode)(內部電極)8c,其係位於基材8b內;以及流路8d,其係位於沿著基材8b的厚度方向。夾鉗電極(內部電極)8c係經由用以將由電漿生成用氣體G所生成之電漿維持在腔室1內之匹配電路而電性連接於高頻電源。
The
然後,藉由電漿所含有之離子或自由基,形成於被處理構件W的表面之被覆膜受到蝕刻處理。 Then, the coating film formed on the surface of the member to be processed W is subjected to etching treatment by ions or radicals contained in the plasma.
O型環11被安裝於接合層9的周圍,係用以保護接合層9者。絕緣部5係例如由塑膠所構成,而從安裝部4為電絕緣。流路8d係貫通基板支撐組件3的上下方向,係用以將冷卻用的氦氣供給至腔室1內者。透氣性插銷13、14裝著於流路8d。亦即,透氣性插銷13係設置在靜電吸附部8內的流路8d,而且,透氣性插銷14係設置在絕緣部5內的流路8d。
The O-
圖3為顯示垂直於本揭示的透氣性插銷之軸向之剖面的一例之剖面圖。圖4、圖5為顯示垂直於本揭示的透氣性插銷之軸向之剖面的另一例之剖面圖。 3 is a cross-sectional view showing an example of a cross-section perpendicular to the axial direction of the air-permeable plug of the present disclosure. 4 and 5 are cross-sectional views showing another example of a cross-section perpendicular to the axial direction of the air-permeable plug of the present disclosure.
如圖3至圖5所示,透氣性插銷13是由在軸向上具有複數個貫通孔16a、16b之緻密質陶瓷的蜂巢結構物16所構成,為直筒狀的圓柱體。透氣性插銷14為具備軸部及凸緣部(未具圖式)而成之圓柱體,前述軸部係由蜂巢結構物16所構成、以及前述凸緣部係於軸部的一端而直徑大於軸部者。凸緣部亦係由緻密質陶瓷所構成。
As shown in FIGS. 3 to 5 , the air-
本揭示中所謂的透氣性插銷13、14,係指設置在用以流通氣體等流體之流路內且堵住流路者。而且,可通過設置在透氣性插銷的一部分之貫通孔而使流體流通。設置有透氣性插銷之流路係例如為內徑1mm至10mm之較細的流路,設置有透氣性插銷之貫通孔的最大內部尺寸係例如為5μm至20μm左右之較細者。
The air-
本揭示中所謂的蜂巢結構物,係意指沿著軸向配置有複數條(例如10條以上的)貫通孔16a、16b之結構物。複數條貫通孔的配置並無特別限定,例如當配置為蜂巢狀時,可將透氣性插銷的強度維持於較高,同時密集地配置貫通孔。貫通孔之垂直於軸向之剖面並無特別限定,例如為圓形、三角形狀、四角形狀、六角形狀。圖3、圖4中的貫通孔16a係垂直於蜂巢結構物16的軸向之剖面為圓形之例子,圖5中的貫通孔16b係垂直於蜂巢結構物16的軸向之剖面為六角形狀之例子。例如,貫通孔16a的直徑為5μm至20μm,貫通孔16b之對角線的長度為5μm至20μm。
The honeycomb structure in the present disclosure means a structure in which a plurality of (for example, 10 or more) through
透氣性插銷13、14係可抑制流路8d內之二次性的電漿生成。當透氣性插銷13、14由緻密質陶瓷的蜂巢結構物16所構成時,係不易產生脫粒,且即使在腔室1內漂浮之顆粒侵入至貫通孔16a、16b,顆粒也不易吸附於內周面16f,並且機械強度變高。
The air-
緻密質陶瓷例如以氧化鋁(Al2O3)、釔鋁複合氧化物(YAG、YAM及YAP的至少任一種)、氮化鋁(AlN)、氧化矽(SiO2)、碳化矽(SiC)、氮化矽(Si3N4)、氧化釔(Y2O3)或鋯酸釔為主成分者。鋯酸釔為組成式係例如由YZrOx(3≦x≦3.5)、YZr2O7、Y2ZrO5、Y2Zr2O3、Zr0.92Y0.08O1.96等所表示者。 Dense ceramics are, for example, aluminum oxide (Al 2 O 3 ), yttrium aluminum composite oxide (at least one of YAG, YAM, and YAP), aluminum nitride (AlN), silicon oxide (SiO 2 ), silicon carbide (SiC) , silicon nitride (Si 3 N 4 ), yttrium oxide (Y 2 O 3 ) or yttrium zirconate as the main component. Yttrium zirconate is represented by, for example, a compositional formula of YZrOx (3≦x≦3.5), YZr 2 O 7 , Y 2 ZrO 5 , Y 2 Zr 2 O 3 , Zr 0.92 Y 0.08 O 1.96 , and the like.
緻密質陶瓷係意指相對密度為96%以上之陶瓷,尤其可為97%以上99.8%以下。此相對密度為相對於陶瓷的理論密度之蜂巢結構物16的表觀密度之百分比。
Dense ceramics means ceramics with a relative density of 96% or more, particularly 97% or more and 99.8% or less. This relative density is a percentage of the apparent density of the
又,關於陶瓷的理論密度,係分別將透氣性插銷13、14的一部分予以粉碎,並將所得到之粉體溶解於鹽酸等溶液後,藉由ICP(Inductively Coupled Plasma)發光分光分析裝置(例如,島津製作所股份有限公司製(ICPS-8100))來求取金屬成分的含量。
In addition, regarding the theoretical density of ceramics, a part of the gas-
構成蜂巢結構物16之各成分係藉由使用CuK α射線之X射線繞射裝置來鑑定。若所鑑定之成分為Al2O3,則使用藉由ICP(Inductively Coupled Plasma)發光分光分析裝置所求出之Al含量之值來換算為Al2O3。若所鑑定之成分為MgO及Na2O,則可以相同的方法分別換算為MgO、Na2O。蜂巢結構物16的表觀密度可依據JIS R 1634-1998來求取。
Each component constituting the
此外,當構成陶瓷之主成分為氧化鋁,且主成分以外的成分為氧化鎂之情形下,若將含量分別設為a質量%、b質量%時,則可使用氧化鋁及氧 化鎂各自的理論密度之值(氧化鋁=3.99g/cm3,氧化鎂=3.58g/cm3)並藉由下列之式(1)來求取陶瓷的理論密度(T.D)。 In addition, when the main component constituting the ceramic is alumina, and the components other than the main component are magnesia, if the contents are set to a mass % and b mass %, respectively, alumina and magnesia can be used. The theoretical density (TD) of the ceramic was obtained from the value of the theoretical density (alumina=3.99 g/cm 3 , magnesium oxide=3.58 g/cm 3 ) by the following formula (1).
T.D=1/(0.01×(a/3.99+b/3.58))‧‧‧(1) T.D=1/(0.01×(a/3.99+b/3.58))‧‧‧(1)
例如,當構成陶瓷之成分的含量係氧化鋁為99質量%、氧化鎂為1質量%時,若是使用式(1)進行計算,則陶瓷的理論密度(T.D)為3.96g/cm3,可藉由將依據JIS R 1634-1998所求取之陶瓷的表觀密度除以此理論密度(T.D)3.96g/cm3而求取相對密度。 For example, when the content of the components constituting the ceramic is 99% by mass of alumina and 1% by mass of magnesia, the theoretical density (TD) of the ceramic is 3.96 g/cm 3 when calculated using the formula (1). The relative density was calculated|required by dividing the apparent density of the ceramic calculated|required based on JIS R 1634-1998 this theoretical density (TD) 3.96g/cm< 3 >.
圖4、圖5所示之蜂巢結構物16係具有外周側區域16c與內周側區域16d,前述外周側區域16c係沿著軸向而包含外周面16e;前述內周側區域16d係排除外周側區域16c。
The
包含蜂巢結構物16的外周面16e之外周側區域16c,其開氣孔率可小於排除外周側區域16c之內周側區域16d。當為如此之構成時,形成開氣孔之輪廓的長度增加,從一端面至另一端面為止之外周面16e的長度係實質上較內周面16f者更長,所以抑制電弧放電之效果高。
The outer
相反地,包含蜂巢結構物16的外周面16e之外周側區域16c,其開氣孔率亦可大於排除外周側區域16c之內周側區域16d。當為如此之構成時,在以接著劑將透氣性插銷13、14固定在基板支撐組件3的流路8d內之情形下,係可得到高的錨定效果,故可涵蓋長期間提升可靠度。
Conversely, the outer
所謂的外周側區域16c,為透氣性插銷14時,係意指相對於垂直於軸向之剖面上之蜂巢結構物16的直徑,從外周面16e朝向徑向而例如為直徑的4.5%以內之區域。
When the outer
外周側區域16c及內周側區域16d之各自的開氣孔率係可依據JIS R 1634-1998來求取。不論為何種情形,只要開氣孔率之差為0.8%以上即可。
The open porosity of each of the outer
本揭示中之主成分,係意指於構成緻密質陶瓷之成分的合計100質量%當中為最多之成分。 The main component in the present disclosure means the component which is the most abundant among the total 100 mass % of the components constituting the dense ceramic.
形成貫通孔16a、16b之內周面16f的粗糙度曲線之均方根斜率(R△q)係可小於蜂巢結構物16之外周面16e的粗糙度曲線之均方根斜率(R△q)。
The root mean square slope (RΔq) of the roughness curve of the inner
所謂粗糙度曲線之均方根斜率(R△q),意指依據JIS B 0601:2001所測定之粗糙度曲線的基準長度1中之局部斜率dZ/dx的均方根,並且為由以下列的式所界定。
The root mean square slope (RΔq) of the roughness curve refers to the root mean square of the local slope dZ/dx in the
均方根斜率(R△q)的數值較大時,則表面的凹凸變得陡峭,均方根斜率(R△q)的數值較小時,則表面的凹凸變得平緩。 When the value of the root mean square slope (RΔq) is large, the surface irregularities become steep, and when the value of the root mean square slope (RΔq) is small, the surface irregularities become gentle.
當內周面16f的粗糙度曲線之均方根斜率(R△q)小於外周面16e的粗糙度曲線之均方根斜率(R△q)時,在腔室1內漂浮之顆粒變得更不易吸附於內周面16f。另一方面,由於外周面16e的凹凸變得陡峭,而當以接著劑將蜂巢結構物16固定在靜電吸附部8、絕緣部5等之情形下,接著劑係沿著凹凸形狀的傾斜而從外周面16e朝向內部深度滲入,所以蜂巢結構物16能夠得到高的接著強度,而可涵蓋長期間維持高可靠度。
When the root mean square slope (RΔq) of the roughness curve of the inner
蜂巢結構物16之外周面16e的粗糙度曲線之均方根斜率(R△q)亦可小於形成貫通孔16a、16b之內周面16f的粗糙度曲線之均方根斜率(R△q)。
The root mean square slope (RΔq) of the roughness curve of the outer
為如此之構成時,從一端面至另一端面為止之內周面16f的局部性斜率係增加或是急遽地傾斜,其長度變得實質上較外周面16e更長,所以抑制電弧放電之效果變得更高。當將蜂巢結構物16裝著於靜電吸附部8、絕緣部5等之情形下,即使蜂巢結構物16接觸此等構件的內周面而產生造成損傷,從蜂巢結構物16脫離之粒子少,於腔室1內的空間中漂浮之顆粒亦少。此外,外周面16e所產生之應力集中亦緩和。
With such a configuration, the local slope of the inner
均方根斜率(R△q)可依據JIS B 0601:2001並使用形狀解析雷射顯微鏡(Keyence股份有限公司製、VK-X1100或其後繼機種)來進行測定。就測定條件而言,首先,將照明方式設定為同軸入射照明(coaxial epi-illumination),倍率設定為240倍,截止值λs設定為無,截止值λc設定為0.08mm,截止值λf設定為無,終端效應的修正設定為有,並且將從作為測定對象之外周面16e及內周面16f之每1處的測定範圍設定為例如1420μm×1070μm,然後於每個測定範圍沿著測定範圍的長邊方向拉取設定為測定對象之線,並進行線粗糙度之計測。設定為計測對象之長度例如為1320μm。
The root mean square slope (RΔq) can be measured according to JIS B 0601:2001 using a shape analysis laser microscope (manufactured by Keyence Co., Ltd., VK-X1100 or its successor). In terms of measurement conditions, first, the illumination method is set to coaxial epi-illumination, the magnification is set to 240 times, the cutoff value λs is set to none, the cutoff value λc is set to 0.08mm, and the cutoff value λf is set to none. , the correction of the end effect is set to Yes, and the measurement range from each of the outer
圖6之(A)為顯示形成於本揭示的透氣性插銷之貫通孔之部分截切立體圖,圖6之(B)為圖6之(A)所示的區域X之放大說明圖。圖6之(A)及圖6之(B)係顯示從蜂巢結構物的外周面朝向貫通孔的軸心C與軸心C平行地研磨之狀態。 FIG. 6(A) is a partially cut-away perspective view showing a through hole formed in the air-permeable plug of the present disclosure, and FIG. 6(B) is an enlarged explanatory view of a region X shown in FIG. 6(A) . FIGS. 6(A) and 6(B) show a state in which the axis C and the axis C of the through hole are ground in parallel from the outer peripheral surface of the honeycomb structure.
以內周面16f、與從外周面16e朝向貫通孔16a、16b的軸心進行研磨所得到的觀察對象面17之稜線18為起點,深度d為10μm以上、20μm
以下之凹部19的個數係每稜線18長度1mm為2個以下,較佳可為1個以下。凹部19係例如為陷落狀。從蜂巢結構物16的外周面16e朝向軸心C之研磨,是為了容易進行凹部19的深度d之測定。深度d的方向,係在觀察對象面17內以稜線18為起點而朝向外周面16e之方向。
The inner
在此,觀察對象面17的算術平均粗糙度(Ra)例如為0.01μm以上0.1μm以下,算術平均粗糙度(Ra)可依據JIS B 0601:2013來求取。此外,為了得到觀察對象面17,研磨材料可使用平均粒徑(D50)為1μm之WA(白鋼鋁石,White Alundum),研磨盤可使用由瀝青所構成之拋光器。
Here, the arithmetic mean roughness (Ra) of the
又,當為外徑達3mm以上之蜂巢結構物16時,可從蜂巢結構物16的外周面16e朝向軸心C進行切削,並留下0.1mm以上0.2mm以下的研磨裕度之後,再進行研磨。
In addition, in the case of the
然後,將以掃描型電子顯微鏡所拍攝的觀察對象面17之圖像(例如橫向2.3mm、縱向1.7mm)為對象,使用例如名為「挟」(Hasamu Monosashi)之免費軟體來測定凹部的深度d,並計算出深度d為10μm以上20μm以下之凹部19的個數即可。
Then, the image (for example, 2.3 mm in width and 1.7 mm in length) of the
在此,之所以將凹部19的深度設定為10μm以上,係因為深度10μm是脫粒而漂浮之顆粒對電漿空間P帶來顯著的不良影響為最小之值,亦即閾值之故。
Here, the depth of the
如此一來,由於在內周面16f上幾乎不存在凹部19,故而成為以內周面16f為起點之脫粒(掉屑(chipping))的產生受到抑制之狀態。因此,即使氣體等流體通過貫通孔16a、16b內,亦可降低脫離的粒子成為新的顆粒而漂浮在電漿空間P之情形。
In this way, since the
在此所謂的凹部19,換言之,是指於內周面16f開口之凹陷。
The
於觀察對象面17中,稜線18的真直度例如可為20μm以下。所謂的真直度,係意指稜線18與幾何正確的直線的偏差之大小。就真直度而言,係可以光學顯微鏡所拍攝的觀察對象面17之圖像(例如橫向1.2mm、縱向1.4mm)為對象,並使用例如名為「挟」之免費軟體來測定稜線18的真直度。只需將貫通孔16a、16b的軸向對著圖像的縱向,使圖像包含夾住內周面16f之左右的稜線18中之至少任一者,並將幾何正確的直線之長度設為1.4mm即可。
In the
若是稜線18的真直度為20μm以下,則呈於內周面16f上幾乎不存在較大之陷落狀的凹部19之狀態,故即使氣體的流動為亂流,亦可降低新的顆粒漂浮在電漿空間P中之疑慮。
If the straightness of the
緻密質陶瓷亦可以氧化鋁為主成分,含有鈉且其含量為20質量ppm以下。由於鈉為提高介電損耗之元素,所以當鈉的含量為20質量ppm以下時,可降低介電損耗,而可得到高的電磁波穿透性。 The dense ceramics may contain alumina as a main component and contain sodium in a content of 20 mass ppm or less. Since sodium is an element that increases the dielectric loss, when the content of sodium is 20 mass ppm or less, the dielectric loss can be reduced and high electromagnetic wave transmittance can be obtained.
貫通孔16a、16b亦可由從一端面至另一端面為止係彎折並貫通者。此種情形與貫通孔16a、16b的真直性高之情形相比,貫通孔16a、16b於軸向上的實質流路係變長,故變得容易抑制電弧放電的產生。
The through
貫通孔16a、16b的圓筒度例如可為0.05mm以上0.2mm以下。貫通孔16a、16b的圓筒度為0.05mm以上時,可延長電流所流通之距離,所以電子變得不易被加速,而更不易引起電弧放電的產生。貫通孔16a、16b的圓筒度為0.2mm以下時,可抑制冷卻用氣體之透氣阻力的上升,而可維持冷卻效率,且即使重複暴露於升降溫中亦不易產生應變,所以可涵蓋長期間使用。
The cylindricity of the through
緻密質陶瓷可以氧化鋁為主成分且含有鋁酸鎂,而且,從外周側區域16c所相鄰之鋁酸鎂的結晶粒子之重心間距離的平均值減去鋁酸鎂的結晶粒子之等效圓直徑的平均值後所得之值,係較從內周側區域16d所相鄰之鋁酸鎂的結晶粒子之重心間距離的平均值減去鋁酸鎂的結晶粒子之等效圓直徑的平均值後所得之值更大。
The dense ceramic may contain alumina as a main component and magnesium aluminate, and the equivalent value of the crystal particles of magnesium aluminate is subtracted from the average value of the distance between the centers of gravity of the crystal particles of magnesium aluminate adjacent to the outer
當為如此之構成時,由於鋁酸鎂的線膨脹率大於氧化鋁,所以於外周側區域16c,於燒結的降溫過程中,鋁酸鎂的結晶粒子係以較氧化鋁的結晶粒子更於外周面上隆起之方式移動,故在燒結後即使為了將蜂巢結構物16載置於鋪粉以降低翹曲或為了去除應變而進行熱處理,亦可抑制成為蜂巢結構物16的被載置面之外周面與鋪粉熔著。
With this structure, since the linear expansion coefficient of magnesium aluminate is higher than that of alumina, in the outer
另一方面,於內周側區域16d中,係成為鋁酸鎂之結晶粒子的間隔小,亦即呈分散之狀態,即使於高溫下施以拉力荷重,亦不易產生裂隙(crack)狀的孔洞(cavity),所以會改善高溫延展性。
On the other hand, in the inner
鋁酸鎂之結晶粒子彼此的間隔可藉由下列方法來求取。分別以100倍的倍率來觀察緻密質陶瓷之內周側區域16d及外周側區域16c的截面,選擇平均的範圍,並藉由例如掃描型電子顯微鏡以面積成為1.044mm2(橫向的長度為1.18mm、縱向的長度為0.885mm)之範圍的方式來拍攝,而得到反射電子圖像。
The interval between crystal particles of magnesium aluminate can be obtained by the following method. The cross-sections of the inner
以此反射電子圖像為對象,使用圖像解析軟體「A IMAGE KUN(ver 2.52)」(註冊商標,Asahi Kasei Engineering股份有限公司製,又,於後記載為圖像解析軟體「A IMAGE KUN」時,即表示Asahi Kasei Engineering股份 有限公司製的圖像解析軟體),並藉由分散度測量的重心間距離法之手法來求取鋁酸鎂之結晶粒子的重心間距離即可。 For this reflected electron image, an image analysis software "A IMAGE KUN (ver 2.52)" (registered trademark, manufactured by Asahi Kasei Engineering Co., Ltd.) was used, and it was later described as an image analysis software "A IMAGE KUN" , it means the shares of Asahi Kasei Engineering Image analysis software manufactured by Co., Ltd.), and the distance between the centers of gravity of the crystal particles of magnesium aluminate can be obtained by the method of the distance between the centers of gravity of the dispersion degree measurement.
就此手法的設定條件而言,例如只要將表示圖像的明暗之指標的閾值設定為180,亮度設定為明亮,小圖形去除面積設定為10μm2,雜訊去除濾波器設定為無即可。又,於上述測定時雖將閾值設定為180,但可因應觀察圖像的亮度來調整閾值,在已將亮度設定為明亮,2值化的方法設定為手動,並將小圖形去除面積設定為10μm2以及將雜訊去除濾波器設定為無之情況下,只需以觀察圖像所顯現之標記成為與鋁酸鎂之結晶粒子的形狀一致之方式來調整閾值即可。 The setting conditions of this method are, for example, set to 180 as the threshold value of the index indicating the lightness and darkness of the image, to set the brightness to be bright, to set the small pattern removal area to 10 μm 2 , and to set the noise removal filter to none. In the above measurement, the threshold was set to 180, but the threshold can be adjusted according to the brightness of the observed image. If the brightness is set to bright, the method of binarization is set to manual, and the small pattern removal area is set to 10 μm 2 and when the noise removal filter is set to none, it is only necessary to adjust the threshold value so that the marks appearing in the observation image match the shape of the crystal particles of magnesium aluminate.
又,當鋁酸鎂的結晶粒子相對於其他部分之對比難以辨識之情形下,只需將結晶粒子黑色化後求取結晶粒子的重心間距離即可。在此情形下,例如只需將閾值設定為85,亮度設定為暗,小圖形去除面積設定為10μm2,雜訊去除濾波器設定為無即可。 In addition, when the comparison of the crystal particles of magnesium aluminate with other parts is difficult to identify, it is only necessary to obtain the distance between the centers of gravity of the crystal particles after blackening the crystal particles. In this case, for example, the threshold value is set to 85, the brightness is set to dark, the small pattern removal area is set to 10 μm 2 , and the noise removal filter is set to none.
鋁酸鎂之結晶粒子的等效圓直徑只需以上述反射電子圖像為對象,使用圖像解析軟體「A IMAGE KUN」,並藉由粒子解析之手法來求取即可。此手法的設定條件亦只須設為與分散度測量的重心間距離法中所使用之設定條件相同即可。 The equivalent circle diameter of the crystal particles of magnesium aluminate can be obtained only by the method of particle analysis using the image analysis software "A IMAGE KUN" using the above-mentioned reflected electron image as the object. The setting conditions of this method also only need to be the same as those used in the distance method between the centers of gravity of dispersion measurement.
在此,鋁酸鎂係使用X射線繞射裝置進行鑑定,關於上述反射電子圖像中所觀察之結晶粒子是否為鋁酸鎂,則是使用電子探針顯微分析儀(EPMA,Electron Probe Micro Analyzer)進行檢測,若有檢測出鋁及鎂,即可視為結晶粒子係由鋁酸鎂所構成。 Here, the magnesium aluminate was identified using an X-ray diffraction apparatus, and whether or not the crystal particles observed in the reflected electron image were magnesium aluminate, an electron probe microanalyzer (EPMA, Electron Probe Micro Analyzer), if aluminum and magnesium are detected, it can be considered that the crystal particles are composed of magnesium aluminate.
緻密質陶瓷亦可以碳化矽為主成分且含有金屬矽。在此情形下,碳化矽例如為70質量%以上92質量%以下,金屬矽為8質量%以上30質量%以下。碳化矽之楊氏模數(動態彈性模數)及3點彎曲強度的機械特性係較金屬矽之楊氏模數(動態彈性模數)及3點彎曲強度的機械特性更為優異。因此,於碳化矽的含量為70質量%以上之情形下,緻密質陶瓷的機械特性會有所提升。另一方面,金屬矽的熱傳導率係高於碳化矽的熱傳導率。故而,當碳化矽的含量為92質量%以下之情形下,緻密質陶瓷的熱傳導性會有所提升。因此,若是碳化矽的含量為70質量%以上92質量%以下,則可兼顧機械特性與熱傳導性。 Dense ceramics may also contain silicon carbide as the main component and metal silicon. In this case, the silicon carbide content is, for example, 70 mass % or more and 92 mass % or less, and the metal silicon content is 8 mass % or more and 30 mass % or less. The mechanical properties of Young's modulus (dynamic modulus of elasticity) and 3-point flexural strength of silicon carbide are superior to those of metal silicon in Young's modulus (dynamic modulus of elasticity) and 3-point flexural strength. Therefore, when the content of silicon carbide is 70 mass % or more, the mechanical properties of the dense ceramic are improved. On the other hand, the thermal conductivity of metal silicon is higher than that of silicon carbide. Therefore, when the content of silicon carbide is 92 mass % or less, the thermal conductivity of the dense ceramic is improved. Therefore, when the content of silicon carbide is 70 mass % or more and 92 mass % or less, both mechanical properties and thermal conductivity can be achieved.
緻密質陶瓷所含有之各成分可藉由X射線繞射裝置進行鑑定,碳化矽及矽的各別含量可藉由裏特沃爾德法(Rietveld method)來求取。 The components contained in the dense ceramic can be identified by an X-ray diffraction apparatus, and the respective contents of silicon carbide and silicon can be obtained by the Rietveld method.
金屬矽之重心間距離的平均值與金屬矽之等效圓直徑的平均值之差並無限定,例如可為8μm以上20μm以下。此差為8μm以上時,碳化矽的分布密度會變高。因此,會使緻密質陶瓷的剛性提升,且剛性的偏向亦降低。另一方面,此差為20μm以下時,緻密質陶瓷的熱傳導性會提升,熱傳導性的偏向亦降低。 The difference between the average value of the distance between the centers of gravity of the metal silicon and the average value of the equivalent circle diameter of the metal silicon is not limited, and may be, for example, 8 μm or more and 20 μm or less. When this difference is 8 μm or more, the distribution density of silicon carbide becomes high. Therefore, the rigidity of the dense ceramic is improved, and the rigidity bias is also reduced. On the other hand, when the difference is 20 μm or less, the thermal conductivity of the dense ceramic is improved, and the tendency of the thermal conductivity is also reduced.
緻密質陶瓷之金屬矽的重心間距離可藉由下列方法來求取。 The distance between the centers of gravity of the metal silicon of the dense ceramic can be obtained by the following method.
首先,裁切出緻密質陶瓷的一部分,並從使用金剛石研磨粒,由研磨剖面所得到之鏡面中選擇平均的範圍,並藉由掃描型電子顯微鏡以各者面積成為0.191mm2(橫向的長度為351μm、縱向的長度為545μm)之範圍的方式來拍攝,而得到觀察圖像。 First, a part of the dense ceramic was cut out, and the average range was selected from the mirror surfaces obtained by polishing the cross section using diamond abrasive grains, and each area was 0.191 mm 2 (lateral length by a scanning electron microscope) An observation image was obtained by photographing in a range of 351 μm and a vertical length of 545 μm).
以此觀察圖像為對象,使用圖像解析軟體「A IMAGE KUN(ver 2.52)」(註冊商標、Asahi Kasei Engineering股份有限公司製,於之後的說明中記 載為圖像解析軟體「A IMAGE KUN」時,即表示Asahi Kasei Engineering股份有限公司製的圖像解析軟體),並藉由分散度測量的重心間距離法之手法來求取矽的重心間距離。 Using this observation image as the object, the image analysis software "A IMAGE KUN (ver 2.52)" (registered trademark, manufactured by Asahi Kasei Engineering Co., Ltd., will be described in the following description) When the image analysis software "A IMAGE KUN" is included, it means the image analysis software manufactured by Asahi Kasei Engineering Co., Ltd.), and the distance between the centers of gravity of the silicon is obtained by the method of the distance between the centers of gravity of dispersion measurement. .
就此手法的設定條件而言,係將表示圖像的明暗之指標的閾值設定為190至195,亮度設定為明亮,小圖形去除面積設定為1μm2,雜訊去除濾波器設定為有。 As for the setting conditions of this method, the threshold value of the index indicating the lightness and darkness of the image is set to 190 to 195, the brightness is set to bright, the small pattern removal area is set to 1 μm 2 , and the noise removal filter is set to on.
矽的等效圓直徑係以上述觀察圖像為對象,並藉由粒子解析之手法來求取。 The equivalent circle diameter of silicon is obtained by the particle analysis method using the above-mentioned observation image as the object.
此手法的設定條件係與重心間距離法中所使用之設定條件相同。此外,蜂巢結構物16的至少外周面可具備由具有導電性之層或膜所構成之第1導電部。
The setting conditions of this method are the same as those used in the distance method between centers of gravity. In addition, at least the outer peripheral surface of the
近來,施加於靜電吸附部8之高頻(RF)電力係逐漸變高。當此高頻電力變高時,於流路8d的內部或附近會有產生電弧放電等異常放電之情形。亦即,若於基板支撐組件3施加高頻(RF)電力時,則會因為靜電吸附部8的靜電電容而在被處理構件W與靜電吸附部8的內面之間產生電位差。由於此電位差的產生,在流路8d的內部會產生RF電位的電位差,當此電位差超過產生放電之臨界值時,會產生異常放電。
Recently, the high frequency (RF) electric power applied to the
於外周面具備第1導電部時,因為容易沿著外周面去除靜電,故容易抑制流路8d內的異常放電。
When the outer peripheral surface is provided with the first conductive portion, since static electricity is easily removed along the outer peripheral surface, abnormal discharge in the
蜂巢結構物16的至少任一端面可具備由具有導電性之層或膜所構成之第2導電部。於端面具備第2導電部時,因為容易沿著具備第2導電部之端面去除靜電,故可進一步抑制流路8d內的異常放電。
At least any one end surface of the
蜂巢結構物16的內周面可具備由具有導電性之層或膜所構成之第3導電部。於內周面具備第3導電部時,因為容易沿著內周面來去除靜電,故可進一步抑制流路8d內的異常放電。
The inner peripheral surface of the
在此所謂的具有導電性,係意指表面電阻值為104Ω以下。表面電阻值只要使用二探針式電阻計(PROSTAT公司製、PRS-802),並將施加電壓設定為100V來求取即可。 The term "having electrical conductivity" as used herein means that the surface resistance value is 10 4 Ω or less. The surface resistance value may be determined by using a two-probe resistance meter (manufactured by PROSTAT, PRS-802) and setting the applied voltage to 100V.
第1導電部、第2導電部及第3導電部係由例如石墨、石墨烯(graphene)、碳奈米管、富勒烯(fullerene)、非晶質碳及DLC(類鑽碳,Diamond-Like Carbon)的至少任一種所構成。 The first conductive part, the second conductive part and the third conductive part are made of, for example, graphite, graphene, carbon nanotubes, fullerenes, amorphous carbon and DLC (Diamond-Like Carbon). Like Carbon) at least any one.
再者,就浸漬在濃度為35質量%的鹽酸,並從浸漬開始經過72小時後,以下列式(2)所表示之每單位面積的質量變化C而言,係可為0.3g/cm2以下。 Furthermore, after immersion in hydrochloric acid having a concentration of 35% by mass and 72 hours from the start of immersion, the mass change C per unit area represented by the following formula (2) may be 0.3 g/cm 2 the following.
C=(W0-W1)/A‧‧‧(2) C=(W 0 -W 1 )/A‧‧‧(2)
(W0:浸漬前之試驗片的質量(g),W1:從浸漬開始經過72小時後之試驗片的質量(g),A:試驗片於浸漬前的表面積(cm2)) (W 0 : mass (g) of the test piece before immersion, W 1 : mass (g) of the test piece after 72 hours from the start of immersion, A: surface area (cm 2 ) of the test piece before immersion)
當每單位面積的質量變化C為0.3g/cm2以下時,分別構成第1導電部、第2導電部及第3導電部的粒子係不易剝離,故可涵蓋長期間浸漬在鹽酸,而提高污垢的去除效果。 When the mass change C per unit area is 0.3 g/cm 2 or less, the particles constituting the first conductive part, the second conductive part and the third conductive part are not easily peeled off, so it can be immersed in hydrochloric acid for a long time, and the increase dirt removal effect.
如上所述,本揭示的基板支撐組件3係具備:靜電吸附構件8以及本揭示的透氣性插銷13、14而成者;其中,前述靜電吸附構件8係具有:基材8b,係由具有吸附有被處理構件W之吸附面8a之板狀的陶瓷所構成;內部
電極10,係位於基材8b內之,以及流路8d,係位於沿著基材8b的厚度方向;前述本揭示的透氣性栓塞13、14係裝著於流路8d的內部。
As described above, the
透氣性插銷13、14係不易產生脫粒,且即使漂浮在腔室1內之顆粒侵入至貫通孔16a、16b,顆粒亦不易吸附於內周面16f,而且因為機械強度高,故可涵蓋長期間使用。
The breathable plugs 13 and 14 are not prone to threshing, and even if the particles floating in the
此外,基材8b及透氣性插銷13、14係由以氧化鋁為主成分之陶瓷所構成,透氣性插銷13、14之氧化鋁的純度(含量)係可較基材8b之氧化鋁的純度(含量)更高。當氧化鋁的純度變高時,對於電漿之抗蝕性會提升,且耐電壓性會變高,故可抑制電弧放電的產生。
In addition, the
尤其,透氣性插銷13、14中之氧化鋁的純度可為99.6質量%以上。此外,鈣的含量可為0.01質量%以下。當鈣的含量為0.01質量%以下時,即使以檸檬酸來洗淨透氣性插銷13、14,也由於對於檸檬酸為抗蝕性低的鈣較少,而可降低鈣源成為顆粒而污染腔室1內之疑慮。
In particular, the purity of alumina in the air-
此外,如圖1之(b)所示,噴淋板2可係將本揭示的透氣性插銷2d裝著於第2流路2c的內部。當為如此之構成時,可抑制從電漿空間P朝向噴淋板2產生電漿及顆粒的逆流,或是抑制第2流路2c內所產生之異常放電,而可防止恐因產生異常放電而產生的起火。
Further, as shown in FIG. 1( b ), the
接著,說明本揭示之透氣性插銷的製造方法的一例。 Next, an example of the manufacturing method of the breathable plug of this disclosure is demonstrated.
在欲得到由以氧化鋁為主成分之緻密質陶瓷所構成之透氣性插銷時,首先係將純度為99.6質量%以上且平均粒徑(D50)為1μm以上3μm以下之氧化鋁的粉末、黏合劑(binder)、潤滑劑以及溶劑進行混合。 In order to obtain a gas-permeable plug composed of a dense ceramic mainly composed of alumina, first, a powder of alumina having a purity of 99.6 mass % or more and an average particle diameter (D50) of 1 μm or more and 3 μm or less is bonded to Binder, lubricant and solvent are mixed.
氧化鋁的粉末可含有氧化鎂或鈉。氧化鋁的粉末100質量%中之氧化鎂的含量係例如為0.1質量%以上0.3質量%以下。氧化鋁的粉末100質量%中之鈉的含量係例如為20質量ppm以下。在此,平均粒徑(D50)可藉由雷射繞射式粒度分布測定法來求取。 The powder of alumina may contain magnesia or sodium. Content of magnesia in 100 mass % of alumina powders is, for example, 0.1 mass % or more and 0.3 mass % or less. The content of sodium in 100 mass % of the alumina powder is, for example, 20 mass ppm or less. Here, the average particle diameter (D50) can be determined by a laser diffraction particle size distribution measurement method.
在欲得到以碳化矽為主成分之緻密質陶瓷所構成之透氣性插銷時,首先係準備粗粒狀粉末及微粒狀粉末來作為碳化矽的粉末,並連同離子交換水及分散劑藉由球磨機或珠磨機進行粉碎混合40至60小時而形成漿液。在此,經粉碎混合後之微粒狀粉末及粗粒狀粉末的各自之粒徑範圍為0.4μm以上4μm以下、11μm以上34μm以下。 When it is desired to obtain a gas-permeable plug composed of dense ceramics with silicon carbide as the main component, firstly, coarse-grained powder and fine-grained powder are prepared as silicon carbide powder, and together with ion-exchanged water and dispersant, they are passed through a ball mill. Or bead mill to pulverize and mix for 40 to 60 hours to form a slurry. Here, the particle size ranges of the fine-grained powder and the coarse-grained powder after being pulverized and mixed are 0.4 μm or more and 4 μm or less, and 11 μm or more and 34 μm or less.
接著,於所得到之漿液中,添加由碳化硼的粉末及非晶質狀的碳粉末或酚樹脂所構成之助燒結劑、以及黏合劑並進行混合。 Next, to the obtained slurry, a sintering aid composed of boron carbide powder, amorphous carbon powder or phenol resin, and a binder are added and mixed.
就微粒狀粉末與粗粒狀粉末之質量比率而言,例如微粒狀粉末可為6質量%以上15質量%以下,粗粒狀粉末可為85質量%以上94質量%以下。 Regarding the mass ratio of the particulate powder to the coarse powder, for example, the particulate powder may be 6 mass % or more and 15 mass % or less, and the coarse powder may be 85 mass % or more and 94 mass % or less.
黏合劑例如為甲基纖維素(MC)、羧甲基纖維素(CMC)、羥丙基纖維素(HPC)、聚乙烯醇(PVA)、聚乙烯丁醛(PVB)等。相對於氧化鋁或碳化矽的粉末100質量份,黏合劑的總量可設為以固形分計係2質量份以上8質量份以下。黏合劑的固形分位於此範圍時,可使擠壓成形的流動性或成形體的形狀保持性維持為高。 The binder is, for example, methyl cellulose (MC), carboxymethyl cellulose (CMC), hydroxypropyl cellulose (HPC), polyvinyl alcohol (PVA), polyvinyl butyraldehyde (PVB), and the like. The total amount of the binder may be 2 parts by mass or more and 8 parts by mass or less in terms of solid content with respect to 100 parts by mass of the powder of alumina or silicon carbide. When the solid content of the binder is within this range, the fluidity of extrusion molding and the shape retention of the molded body can be maintained high.
潤滑劑為蠟、甘油、硬脂酸等。相對於氧化鋁或碳化矽的粉末100質量份,潤滑劑的總量可設為以固形分計係1質量份以上8質量份以下。 Lubricants are wax, glycerin, stearic acid and the like. The total amount of the lubricant can be 1 part by mass or more and 8 parts by mass or less in terms of solid content with respect to 100 parts by mass of the powder of alumina or silicon carbide.
此外,溶劑例如為水,尤其是離子交換水的雜質量較少,故為較佳。溶劑係以使混練步驟中之胚土的黏度成為15000Pa‧s以上22000Pa‧s以下 之方式,而設成相對於氧化鋁的粉末100質量份為例如10質量份以上20質量份以下。 In addition, the solvent is, for example, water, and ion-exchanged water, in particular, is preferable because the amount of impurities is small. The solvent is used so that the viscosity of the embryo soil in the kneading step is above 15000Pa·s and below 22000Pa·s In this way, it is set to be, for example, 10 parts by mass or more and 20 parts by mass or less with respect to 100 parts by mass of the alumina powder.
以上述的調配比率將氧化鋁或碳化矽的粉末、黏合劑、潤滑劑及溶劑進行混合之後,使用萬能混合機或3輥混練機等來進行混練,而得到黏度例如為15000Pa‧s以上22000Pa‧s以下之胚土。黏度的測定可藉由使用定載擠出型流變儀(島津製作所股份有限公司製Shimadzu Flow Tester CFT-500C)之流動特性評估法來求取。 After mixing the alumina or silicon carbide powder, binder, lubricant and solvent at the above-mentioned mixing ratio, use a universal mixer or a 3-roll kneader to knead to obtain a viscosity of, for example, 15000Pa·s or more and 22000Pa· The embryo soil below s. The measurement of viscosity can be calculated|required by the flow characteristic evaluation method using a constant-load extrusion rheometer (Shimadzu Flow Tester CFT-500C by Shimadzu Corporation).
使用裝設有用以形成成形體的貫通孔之壓模的擠壓成形機將此胚土成形,而得到於軸向上具有複數個貫通孔之蜂巢狀的成形體。 This green soil is formed using an extrusion molding machine equipped with a die for forming through-holes of the formed body to obtain a honeycomb-shaped formed body having a plurality of through-holes in the axial direction.
在此,由於形成蜂巢結構物的貫通孔之內周面以及蜂巢結構物的外周面之粗糙度曲線中的均方根斜率(R△q)會受到壓模之轉印面的影響,所以適當地調整壓模的轉印面即可。 Here, since the root-mean-square slope (RΔq) in the roughness curves of the inner peripheral surface of the through-hole forming the honeycomb structure and the outer peripheral surface of the honeycomb structure is affected by the transfer surface of the stamper, it is appropriate to Just adjust the transfer surface of the stamper.
在將成形體裁切成為例如長度為20mm以上80mm以下之後,進行乾燥以去除成形體內的水分。乾燥溫度例如為40至70℃。當乾燥後之成形體的主成分為氧化鋁之情形下,係將成形體在大氣環境中以保持溫度1550℃至1650℃進行燒製0.5小時以上5小時以下,藉此可得到本揭示的透氣性插銷。 After the molded body is cut to have a length of, for example, 20 mm or more and 80 mm or less, drying is performed to remove moisture in the molded body. The drying temperature is, for example, 40 to 70°C. In the case where the main component of the dried formed body is alumina, the formed body is fired at a temperature of 1550°C to 1650°C for 0.5 hours or more and 5 hours in an atmospheric environment, whereby the air permeability of the present disclosure can be obtained. Sex plug.
於乾燥後之成形體的主成分為碳化矽之情形下,在氮環境中,將溫度設定為450℃以上650℃以下,保持時間設定為2小時以上10小時以下來進行脫脂,而得到脫脂體。接著,在氬氣等惰性氣體的減壓環境中,以保持溫度1800℃至2200℃將此脫脂體燒製0.5小時以上5小時以下,藉此可得到本揭示的透氣性插銷。 In the case where the main component of the dried molded body is silicon carbide, in a nitrogen atmosphere, the temperature is set to 450°C or more and 650°C or less, and the holding time is set to 2 hours or more and 10 hours or less to carry out degreasing to obtain a degreased body. . Next, the degreased body is fired at a temperature of 1800°C to 2200°C for 0.5 hours or more and 5 hours or less in a decompressed atmosphere of an inert gas such as argon, whereby the gas permeable plug of the present disclosure can be obtained.
就本揭示之透氣性插銷的製造方法的另一例進行說明。 Another example of the manufacturing method of the breathable plug of the present disclosure will be described.
透氣性插銷的製造方法係包含下述步驟(a)至(e)。 The manufacturing method of the breathable plug includes the following steps (a) to (e).
步驟(a):將累積分布曲線之累積95體積%的粒徑為6.5μm以下之氧化鋁為主成分之粉末、蠟、分散劑以及塑化劑收納於容器,並進行攪拌而得到漿液之步驟。 Step (a): The powder, wax, dispersant and plasticizer whose particle size is 6.5 μm or less with a particle size of 95% by volume of the cumulative distribution curve as the main components are stored in a container and stirred to obtain a slurry .
步驟(b):預熱漿液之步驟。 Step (b): the step of preheating the slurry.
步驟(c):將經預熱之漿液進行脫泡處理之步驟。 Step (c): the step of defoaming the preheated slurry.
步驟(d):將漿液注入至外周側圍繞有加熱手段之成型模具而得到成形體之步驟。 Step (d): A step of injecting the slurry into a molding die surrounded by a heating means on the outer peripheral side to obtain a molded body.
步驟(e):燒製成形體之步驟。 Step (e): the step of firing into a shaped body.
步驟(a)係將原料收納於容器,並進行攪拌而得到漿液之步驟。原料為以氧化鋁為主成分之粉末、蠟、分散劑及塑化劑。 Step (a) is a step of storing a raw material in a container and stirring to obtain a slurry. The raw materials are powder with alumina as the main component, wax, dispersant and plasticizer.
以氧化鋁為主成分之粉末,其累積分布曲線之累積95體積%的粒徑為6.5μm以下。藉由使用如此之粉末,可得到例如相對密度為96%以上之緻密質陶瓷,並減少於內周面16f形成凹部19之情形。尤其是可藉由減小所使用之粉末的平均粒徑而進一步減少凹部19。主成分之粉末的純度並無限定,可使用具有例如99.5質量%以上的純度之粉末。
For powders containing alumina as the main component, the cumulative 95 vol% particle size of the cumulative distribution curve is 6.5 μm or less. By using such a powder, for example, a dense ceramic having a relative density of 96% or more can be obtained, and the formation of the
所謂的累積分布曲線,係意指在2維的圖表中以橫軸為粒徑、以縱軸為粒徑的累積百分率之情形下,表示粒徑的累積分布之曲線。累積分布曲線可藉由雷射繞射散射法,並使用例如MicrotracBEL公司製的粒徑分布測定裝置(MT3300或其後繼機種)來求取。 The cumulative distribution curve means a curve representing the cumulative distribution of particle diameters when the horizontal axis is the particle diameter and the vertical axis is the cumulative percentage of the particle diameter in a two-dimensional graph. The cumulative distribution curve can be obtained by the laser diffraction scattering method using, for example, a particle size distribution analyzer (MT3300 or its successor) manufactured by MicrotracBEL.
相對於上述粉末100質量份,係以蠟為13質量份以上14質量份以下,分散劑為0.4質量份以上0.5質量份以下,塑化劑為1.4質量份以上1.5 質量份以下之比率來使用。蠟可列舉例如:石蠟(paraffin wax)、蜜蠟等。分散劑可列舉例如:高級脂肪酸、高級脂肪酸酯等。塑化劑可列舉例如:高級脂肪酸、鄰苯二甲酸酯等。 With respect to 100 parts by mass of the above powder, the amount of wax is 13 parts by mass to 14 parts by mass, the dispersant is 0.4 parts by mass to 0.5 parts by mass, and the plasticizer is 1.4 parts by mass to 1.5 parts by mass A ratio of parts by mass or less is used. As a wax, paraffin wax, beeswax, etc. are mentioned, for example. As a dispersing agent, a higher fatty acid, a higher fatty acid ester, etc. are mentioned, for example. As a plasticizer, a higher fatty acid, a phthalate, etc. are mentioned, for example.
將上述粉末、蠟、分散劑及塑化劑收納於例如已加熱至90℃以上140℃以下之容器內。此時,蠟、分散劑及塑化劑係成為液體。容器例如為樹脂製。將容器安裝於攪拌機,並使容器進行3分鐘的自轉公轉(自轉公轉混練處理),藉此攪拌上述粉末、蠟、分散劑及塑化劑,而得到漿液。 The said powder, wax, dispersing agent, and plasticizer are accommodated in the container heated to 90 degreeC or more and 140 degrees C or less, for example. At this time, the wax, dispersant, and plasticizer are liquid. The container is made of resin, for example. The container was attached to a stirrer, and the container was subjected to autorotation revolution (autorotation revolution kneading treatment) for 3 minutes, whereby the powder, wax, dispersant, and plasticizer were stirred to obtain a slurry.
於步驟(b)中,係將步驟(a)中所得到之漿液預熱。藉由進行預熱,漿液的流動性會變高,而可進一步提高步驟(c)中所得到之效果。預熱係例如在120℃以上180℃以下的溫度下進行。 In step (b), the slurry obtained in step (a) is preheated. By preheating, the fluidity of the slurry becomes high, and the effect obtained in the step (c) can be further enhanced. The preheating system is performed, for example, at a temperature of 120°C or higher and 180°C or lower.
於步驟(c)中,係將在步驟(b)中經預熱之漿液供至脫泡處理。藉由進行脫泡處理,可減少漿液所包含之氣泡,故可得到相對密度更高之緻密質陶瓷。脫泡處理係例如將所得到之漿液填充於注射器,並使用脫泡固定具,使注射器進行1分鐘的自轉公轉,同時進行脫泡。 In step (c), the slurry preheated in step (b) is supplied to the defoaming process. By performing the defoaming treatment, the air bubbles contained in the slurry can be reduced, so that a dense ceramic with a higher relative density can be obtained. In the defoaming treatment, for example, a syringe is filled with the obtained slurry, and defoaming is performed while rotating and revolving the syringe for 1 minute using a defoaming fixture.
於步驟(d)中,係將步驟(c)中經脫泡處理後之漿液注入至成型模具而得到成形體。成型模具係使用外周側圍繞有加熱手段之成型模具。如此一來,藉由使用外周側圍繞有加熱手段之成型模具,而能夠得到圖3至圖5所示之蜂巢結構物。加熱手段並無限定,可列舉例如加熱器等。藉由加熱手段,係例如可以與注入至成型模具時之漿液溫度的差成為50℃以內之方式來進行加熱。成形體的形狀並無限定,可如圖3至圖5所示般具有圓柱狀,亦可具有角柱狀等其他形狀。 In step (d), the slurry after defoaming treatment in step (c) is injected into a molding die to obtain a molded body. The molding die is a molding die with heating means surrounding the outer peripheral side. In this way, the honeycomb structure shown in FIG. 3 to FIG. 5 can be obtained by using the molding die surrounded by the heating means on the outer peripheral side. The heating means is not limited, for example, a heater and the like can be mentioned. By heating means, for example, heating can be performed so that the difference from the temperature of the slurry at the time of injection into the molding die is within 50°C. The shape of the molded body is not limited, and may have a cylindrical shape as shown in FIGS. 3 to 5 , or may have other shapes such as a square column shape.
於步驟(e)中,係燒製於步驟(c)所得到之成形體。燒製只要係例如在大氣環境下於1400℃以上1700℃以下保持1小時以上3小時以下即可。以如此方式,能夠得到本揭示的透氣性插銷,其係具備在軸向上具有複數個貫通孔之緻密質陶瓷的蜂巢結構物。於以如此方式所得到之透氣性插銷13、14中,以形成貫通孔16a、16b之內周面16f與從蜂巢結構物的外周面16e朝向貫通孔16a、16b的軸心C進行研磨所得到之觀察對象面17之稜線18為起點,深度d為10μm以上20μm以下之凹部19的個數係每稜線18長度1mm2個以下。
In the step (e), the formed body obtained in the step (c) is fired. The firing may be maintained at 1400° C. or higher and 1700° C. or lower for 1 hour or more and 3 hours or less, for example, in an atmospheric environment. In this way, the air-permeable plug of the present disclosure can be obtained, which is a honeycomb structure including a dense ceramic having a plurality of through holes in the axial direction. The air-
為了得到蜂巢結構物的至少外周面係具備第1導電部之透氣性插銷,只要於乾燥後之成形體的外周面塗佈或噴霧含有石墨、石墨烯、碳奈米管、富勒烯、非晶質碳等碳之2-丙醇(IPA)溶液後,進行上述燒製即可。 In order to obtain an air-permeable plug having at least the first conductive portion on the outer peripheral surface of the honeycomb structure, it is only necessary to coat or spray the outer peripheral surface of the dried molded body containing graphite, graphene, carbon nanotubes, fullerenes, non-ferrous metals, etc. After the 2-propanol (IPA) solution of carbon such as crystalline carbon, the above-mentioned firing may be performed.
為了得到蜂巢結構物的至少任一端面係具備第2導電部之透氣性插銷,只要於乾燥後之成形體的端面塗佈或噴霧上述2-丙醇(IPA)溶液後,進行上述燒製即可。 In order to obtain an air-permeable plug having a second conductive portion on at least one end surface of the honeycomb structure, the above-mentioned 2-propanol (IPA) solution is applied or sprayed on the end surface of the dried molded body, and then the above-mentioned firing is performed. Can.
為了得到蜂巢結構物的內周面具備第3導電部之透氣性插銷,只要於乾燥後之成形體的內周面塗佈或噴霧上述2-丙醇(IPA)溶液後,進行上述燒製即可。 In order to obtain an air-permeable plug having a third conductive portion on the inner peripheral surface of the honeycomb structure, the above-mentioned 2-propanol (IPA) solution is coated or sprayed on the inner peripheral surface of the dried molded body, and then fired as described above. Can.
當藉由DLC來形成第1導電部、第2導電部及第3導電部的至少任一者之情形下,只要使用電漿離子注入法而在藉由上述燒製所得到之燒結體形成由DLC所構成之膜後,將溫度設定為200℃以上1000℃以下,並進行1小時以上的熱處理即可。 When at least one of the first conductive portion, the second conductive portion, and the third conductive portion is formed by DLC, the sintered body obtained by the above-mentioned firing can be formed with a plasma ion implantation method. After forming the film composed of DLC, the temperature may be set to 200° C. or higher and 1000° C. or lower, and heat treatment may be performed for 1 hour or longer.
藉由上述製造方法所得到之本揭示的透氣性插銷係不易產生脫粒,且即使漂浮於腔室內之顆粒侵入至貫通孔16a、16b,顆粒亦不易吸附於內周面16f,而且機械強度高,故可涵蓋長期間使用。
The air-permeable plug of the present disclosure obtained by the above-mentioned manufacturing method is not easy to produce threshing, and even if the particles floating in the cavity invade into the through
2b:氣體供給部 2b: Gas supply section
2c:第2流路 2c: 2nd flow path
2d:透氣性插銷 2d: breathable latch
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