TWI789770B - Breathable plug, substrate support assembly and shower plate - Google Patents

Breathable plug, substrate support assembly and shower plate Download PDF

Info

Publication number
TWI789770B
TWI789770B TW110119497A TW110119497A TWI789770B TW I789770 B TWI789770 B TW I789770B TW 110119497 A TW110119497 A TW 110119497A TW 110119497 A TW110119497 A TW 110119497A TW I789770 B TWI789770 B TW I789770B
Authority
TW
Taiwan
Prior art keywords
honeycomb structure
permeable plug
air
outer peripheral
gas
Prior art date
Application number
TW110119497A
Other languages
Chinese (zh)
Other versions
TW202202472A (en
Inventor
浜島浩
Original Assignee
日商京瓷股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商京瓷股份有限公司 filed Critical 日商京瓷股份有限公司
Publication of TW202202472A publication Critical patent/TW202202472A/en
Application granted granted Critical
Publication of TWI789770B publication Critical patent/TWI789770B/en

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/10Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on aluminium oxide
    • C04B35/111Fine ceramics
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/10Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on aluminium oxide
    • C04B35/111Fine ceramics
    • C04B35/117Composites
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B38/00Porous mortars, concrete, artificial stone or ceramic ware; Preparation thereof
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81Coating or impregnation
    • C04B41/85Coating or impregnation with inorganic materials
    • C04B41/87Ceramics
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065Plasma etching; Reactive-ion etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Organic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Composite Materials (AREA)
  • Drying Of Semiconductors (AREA)
  • External Artificial Organs (AREA)

Abstract

The breathable plug of the present disclosure comprises a honeycomb structure of dense ceramics having multiple through holes in the axial direction.
The substrate support assembly of the present disclosure comprises an electrostatic attraction member and a breathable plug. The electrostatic attraction member has: a substrate made of a plate-shaped ceramic having an attraction surface on which the member to be processed is attracted and a facing surface located opposite to the attraction surface; an internal electrode located within the substrate; and a flow path located along the thickness direction of the base material. The breathable plug was mounted inside the flow path.

Description

透氣性插銷、基板支撐組件及噴淋板 Gas permeable pins, substrate support assemblies and spray plates

本揭示係關於透氣性插銷以及具備此透氣性插銷而成之基板支撐組件。 The present disclosure relates to a gas-permeable plug and a substrate supporting component provided with the gas-permeable plug.

以往,於電漿蝕刻裝置、電漿CVD(化學氣相沈積,Chemical Vapor Deposition)裝置等半導體製造裝置中,如專利文獻1所示,係於被載置在基板支撐組件上之半導體晶圓等基板、與用以導入並向基板供給電漿生成用氣體之噴淋板(氣體分配板)之間,施加高頻電壓以成為電漿狀態,而在基板的表面進行成膜或是將形成於基板的表面之薄膜進行蝕刻。此基板支撐組件係於其厚度方向具備流路,且藉由將冷卻用氣體供給至此流路而抑制被處理構件W的溫度上升。 Conventionally, in semiconductor manufacturing devices such as plasma etching devices and plasma CVD (Chemical Vapor Deposition) devices, as shown in Patent Document 1, semiconductor wafers placed on substrate support members, etc. Between the substrate and the shower plate (gas distribution plate) for introducing and supplying the gas for plasma generation to the substrate, a high-frequency voltage is applied to form a plasma state, and a film is formed on the surface of the substrate or will be formed on the surface of the substrate. The thin film on the surface of the substrate is etched. This substrate support unit has a flow path in its thickness direction, and the temperature rise of the member W to be processed is suppressed by supplying cooling gas to the flow path.

於半導體製造裝置的處理室內處理基板之情形下,係有從基板支撐組件的上側朝下側產生電弧放電,流路有時會成為放電的路徑。因此,為了不使流路成為放電的路徑,於專利文獻2中,係提出一種靜電吸附盤(基板支撐組件),其係將由多孔質的蜂巢結構所構成之陶瓷插銷裝著於流路。 When substrates are processed in a processing chamber of a semiconductor manufacturing device, arc discharge occurs from the upper side of the substrate support unit to the lower side, and the flow path may become a path of discharge. Therefore, in order not to make the flow path a path of discharge, Patent Document 2 proposes an electrostatic adsorption plate (substrate support assembly) in which a ceramic pin made of a porous honeycomb structure is mounted on the flow path.

[先前技術文獻] [Prior Art Literature]

[專利文獻] [Patent Document]

[專利文獻1]日本特開2018-162205號公報 [Patent Document 1] Japanese Patent Laid-Open No. 2018-162205

[專利文獻2]日本特開2019-165193號公報 [Patent Document 2] Japanese Patent Laid-Open No. 2019-165193

本揭示的透氣性插銷係具備緻密質陶瓷的蜂巢結構物,該緻密質陶瓷的蜂巢結構物係於軸向上具有複數個貫通孔。 The air-permeable plug of the present disclosure has a dense ceramic honeycomb structure, and the dense ceramic honeycomb structure has a plurality of through holes in the axial direction.

本揭示的基板支撐組件,係具備靜電吸附構件以及透氣性插銷而成者;其中,上述靜電吸附構件係具有:基材,係由具有吸附有被處理構件之吸附面以及位於該吸附面的相反側之對向面之板狀的陶瓷所構成;內部電極,係位於該基材內;以及流路,係位於沿著前述基材的厚度方向;上述透氣性插銷係裝著於前述流路的內部。 The substrate supporting assembly disclosed in the present disclosure is formed by having an electrostatic adsorption member and a gas-permeable plug; wherein, the electrostatic adsorption member has: a base material having an adsorption surface on which the member to be processed is adsorbed and an opposite surface located on the adsorption surface. The plate-shaped ceramics on the opposite side of the side; the internal electrode is located in the base material; and the flow path is located along the thickness direction of the aforementioned base material; internal.

本揭示的噴淋板係具備:第2基材,其係由板狀的陶瓷所構成,該板狀的陶瓷在厚度方向上具有通過電漿生成用氣體之複數個第2流路;以及上述透氣性插銷,其係裝著於前述第2流路的內部。 The shower plate of the present disclosure includes: a second base material, which is composed of plate-shaped ceramics, and the plate-shaped ceramics has a plurality of second flow paths through which the gas for plasma generation passes in the thickness direction; and the above-mentioned The air-permeable plug is installed inside the second flow path.

1:腔室 1: chamber

2:噴淋板 2: spray plate

2a:擴散部 2a: Diffusion

2b:氣體供給部 2b: Gas supply part

2c:第2流路 2c: The second channel

2d:透氣性插銷 2d: breathable plug

3:基板支撐組件支撐部 3: Substrate support assembly support part

4:安裝部 4: Installation Department

5:絕緣部 5: Insulation part

6:支撐部 6: Support part

7:熱傳導部 7: Heat conduction part

8:靜電吸附部 8: Electrostatic adsorption part

8a:吸附面 8a: Adsorption surface

8b:基材 8b: Substrate

8c:夾鉗電極(內部電極) 8c: clamp electrode (internal electrode)

8d:流路 8d: flow path

9:接合層 9: Bonding layer

11:O型環 11: O-ring

13:透氣性插銷 13: breathable plug

14:透氣性插銷 14: breathable plug

15:高頻電源 15: High frequency power supply

16:蜂巢結構物 16: Honeycomb structure

16a,16b:貫通孔 16a, 16b: through holes

16c:外周側區域 16c: Peripheral area

16d:內周側區域 16d: inner peripheral area

16e:外周面 16e: Peripheral surface

16f:內周面 16f: inner peripheral surface

17:觀察對象面 17: Observe the object surface

18:稜線 18: Ridge

19:凹部 19: Concave

20:電漿處理裝置 20: Plasma treatment device

圖1之(a)為顯示具備本揭示的透氣性插銷之電漿處理裝置的一部分之剖面圖,圖1之(b)為放大的A部分之剖面圖。 (a) of FIG. 1 is a cross-sectional view showing part of a plasma processing apparatus equipped with a gas-permeable plug of the present disclosure, and (b) of FIG. 1 is an enlarged cross-sectional view of part A.

圖2為放大的配置於圖1所示之電漿處理裝置的內部之基板支撐組件之剖面圖。 FIG. 2 is an enlarged cross-sectional view of a substrate support assembly disposed inside the plasma processing apparatus shown in FIG. 1 .

圖3為顯示垂直於本揭示的透氣性插銷之軸向之剖面的一例之剖面圖。 Fig. 3 is a sectional view showing an example of a section perpendicular to the axial direction of the air-permeable plug of the present disclosure.

圖4為顯示垂直於本揭示的透氣性插銷之軸向之剖面的另一例之剖面圖。 4 is a cross-sectional view showing another example of a cross-section perpendicular to the axial direction of the air-permeable plug of the present disclosure.

圖5為顯示垂直於本揭示的透氣性插銷之軸向之剖面的又另一例之剖面圖。 5 is a cross-sectional view showing still another example of a cross-section perpendicular to the axial direction of the air-permeable plug of the present disclosure.

圖6之(A)為顯示形成於本揭示的透氣性插銷的貫通孔之部分截切立體圖,圖6之(B)為圖6之(A)所示的區域X之放大說明圖。 6(A) is a partially cutaway perspective view showing the through hole formed in the air-permeable plug of the present disclosure, and FIG. 6(B) is an enlarged explanatory view of the region X shown in FIG. 6(A).

以下係參照圖式來詳細說明本揭示之透氣性插銷的一例。惟於本說明書的全部圖式中,只要不會產生混淆,對於相同的部分即係附註相同的符號,並適時地省略其說明。 An example of the air-permeable plug of the present disclosure will be described in detail below with reference to the drawings. However, in all the drawings in this specification, as long as there is no confusion, the same symbols are attached to the same parts, and the description thereof is omitted as appropriate.

圖1為顯示具備本揭示的透氣性插銷之電漿處理裝置的一部分之剖面圖。圖2為配置在圖1所示之電漿處理裝置的內部之基板支撐組件經放大後之剖面圖。 FIG. 1 is a cross-sectional view showing part of a plasma treatment apparatus provided with a gas-permeable plug of the present disclosure. FIG. 2 is an enlarged cross-sectional view of a substrate support assembly disposed inside the plasma processing apparatus shown in FIG. 1 .

圖1所示之電漿處理裝置20例如為電漿蝕刻裝置,其係於內部具備配置半導體晶圓等被處理構件W之腔室1,於腔室1內的上側配置有噴淋板2,於下側係對向地配置有基板支撐組件3。 The plasma processing apparatus 20 shown in FIG. 1 is, for example, a plasma etching apparatus, which is equipped with a chamber 1 in which a processed member W such as a semiconductor wafer is disposed, and a shower plate 2 is disposed on the upper side of the chamber 1. The substrate support assembly 3 is disposed opposite to the lower side.

噴淋板2係由板狀的陶瓷所構成之第2基材,其係具備擴散部2a以及氣體供給部2b;前述擴散部2a係用以擴散電漿生成用氣體G之內部空 間;前述氣體供給部2b係具有用以將電漿生成用氣體G供給至腔室1內之複數個第2流路2c。 The shower plate 2 is a second base material made of plate-shaped ceramics, which is equipped with a diffusion part 2a and a gas supply part 2b; the aforementioned diffusion part 2a is used to diffuse the gas G used for plasma generation Between; the aforementioned gas supply unit 2b has a plurality of second flow paths 2c for supplying the gas G for plasma generation into the chamber 1 .

此外,從氣體供給部2b通過第2流路2c被噴淋狀地排出之電漿生成用氣體G,係藉由從高頻電源15將高頻電力(RF)供給至基板支撐組件3而成為電漿,並形成電漿空間P。 In addition, the plasma generation gas G discharged in a shower form from the gas supply part 2b through the second flow path 2c is formed by supplying high-frequency power (RF) from the high-frequency power source 15 to the substrate supporting unit 3. Plasma, and form the plasma space P.

在此,電漿生成用氣體G的例子可列舉:SF6、CF4、CHF3、ClF3、NF3、C4F8、HF等氟系氣體;Cl2、HCl、BCl3、CCl4等氯系氣體。 Here, examples of the gas G for plasma generation include: fluorine-based gases such as SF 6 , CF 4 , CHF 3 , ClF 3 , NF 3 , C 4 F 8 , and HF; Cl 2 , HCl, BCl 3 , CCl 4 Chlorine gas.

基板支撐組件3為具備安裝部4、絕緣部5、支撐部6、熱傳導部7及靜電吸附部8而成之靜電吸附盤,靜電吸附部8例如像圖2所示般,係隔著由聚矽氧接著劑所構成之接合層9而接合於熱傳導部7。 The substrate support assembly 3 is an electrostatic adsorption plate provided with a mounting portion 4, an insulating portion 5, a supporting portion 6, a heat conduction portion 7, and an electrostatic adsorption portion 8. The electrostatic adsorption portion 8 is, for example, as shown in FIG. The bonding layer 9 made of silicone adhesive is bonded to the heat conduction portion 7 .

靜電吸附部8係具有:基材8b,其係由藉由靜電吸附力將矽晶圓等被處理構件W吸附於吸附面8a之板狀的陶瓷所構成;夾鉗電極(clamp electrode)(內部電極)8c,其係位於基材8b內;以及流路8d,其係位於沿著基材8b的厚度方向。夾鉗電極(內部電極)8c係經由用以將由電漿生成用氣體G所生成之電漿維持在腔室1內之匹配電路而電性連接於高頻電源。 The electrostatic adsorption part 8 is provided with: a base material 8b, which is composed of a plate-shaped ceramic that adsorbs a processed member W such as a silicon wafer to the adsorption surface 8a by electrostatic adsorption force; electrode) 8c, which is located in the base material 8b; and flow path 8d, which is located along the thickness direction of the base material 8b. The clamp electrode (internal electrode) 8c is electrically connected to a high-frequency power source through a matching circuit for maintaining the plasma generated by the gas G for plasma generation in the chamber 1 .

然後,藉由電漿所含有之離子或自由基,形成於被處理構件W的表面之被覆膜受到蝕刻處理。 Then, the coating film formed on the surface of the member W to be processed is subjected to etching treatment by ions or radicals contained in the plasma.

O型環11被安裝於接合層9的周圍,係用以保護接合層9者。絕緣部5係例如由塑膠所構成,而從安裝部4為電絕緣。流路8d係貫通基板支撐組件3的上下方向,係用以將冷卻用的氦氣供給至腔室1內者。透氣性插銷13、14裝著於流路8d。亦即,透氣性插銷13係設置在靜電吸附部8內的流路8d,而且,透氣性插銷14係設置在絕緣部5內的流路8d。 The O-ring 11 is installed around the bonding layer 9 to protect the bonding layer 9 . The insulating part 5 is made of plastic, for example, and is electrically insulated from the mounting part 4 . The flow path 8 d passes through the substrate support assembly 3 in the vertical direction, and is used to supply helium gas for cooling into the chamber 1 . The air-permeable pins 13 and 14 are attached to the flow path 8d. That is, the air-permeable plug 13 is provided in the flow path 8d in the electrostatic adsorption portion 8 , and the air-permeable plug 14 is provided in the flow path 8d in the insulating portion 5 .

圖3為顯示垂直於本揭示的透氣性插銷之軸向之剖面的一例之剖面圖。圖4、圖5為顯示垂直於本揭示的透氣性插銷之軸向之剖面的另一例之剖面圖。 Fig. 3 is a sectional view showing an example of a section perpendicular to the axial direction of the air-permeable plug of the present disclosure. 4 and 5 are cross-sectional views showing another example of a cross-section perpendicular to the axial direction of the air-permeable plug of the present disclosure.

如圖3至圖5所示,透氣性插銷13是由在軸向上具有複數個貫通孔16a、16b之緻密質陶瓷的蜂巢結構物16所構成,為直筒狀的圓柱體。透氣性插銷14為具備軸部及凸緣部(未具圖式)而成之圓柱體,前述軸部係由蜂巢結構物16所構成、以及前述凸緣部係於軸部的一端而直徑大於軸部者。凸緣部亦係由緻密質陶瓷所構成。 As shown in Fig. 3 to Fig. 5, the air-permeable plug 13 is composed of a dense ceramic honeycomb structure 16 having a plurality of through holes 16a, 16b in the axial direction, and is a straight cylinder. The gas-permeable plug 14 is a cylinder with a shaft and a flange (not shown), the shaft is made of a honeycomb structure 16, and the flange is attached to one end of the shaft and has a diameter greater than Shaft. The flange part is also made of dense ceramics.

本揭示中所謂的透氣性插銷13、14,係指設置在用以流通氣體等流體之流路內且堵住流路者。而且,可通過設置在透氣性插銷的一部分之貫通孔而使流體流通。設置有透氣性插銷之流路係例如為內徑1mm至10mm之較細的流路,設置有透氣性插銷之貫通孔的最大內部尺寸係例如為5μm至20μm左右之較細者。 The so-called air-permeable plugs 13 and 14 in this disclosure refer to those that are arranged in the flow paths for circulating fluids such as gas and block the flow paths. Furthermore, the fluid can flow through the through-hole provided in a part of the air-permeable plug. The flow path provided with the air-permeable plug is, for example, a thinner flow path with an inner diameter of 1 mm to 10 mm, and the maximum internal dimension of the through hole provided with the air-permeable plug is, for example, about 5 μm to 20 μm.

本揭示中所謂的蜂巢結構物,係意指沿著軸向配置有複數條(例如10條以上的)貫通孔16a、16b之結構物。複數條貫通孔的配置並無特別限定,例如當配置為蜂巢狀時,可將透氣性插銷的強度維持於較高,同時密集地配置貫通孔。貫通孔之垂直於軸向之剖面並無特別限定,例如為圓形、三角形狀、四角形狀、六角形狀。圖3、圖4中的貫通孔16a係垂直於蜂巢結構物16的軸向之剖面為圓形之例子,圖5中的貫通孔16b係垂直於蜂巢結構物16的軸向之剖面為六角形狀之例子。例如,貫通孔16a的直徑為5μm至20μm,貫通孔16b之對角線的長度為5μm至20μm。 The so-called honeycomb structure in this disclosure refers to a structure in which a plurality of (for example, more than 10) through-holes 16a, 16b are arranged along the axial direction. The arrangement of the plurality of through-holes is not particularly limited. For example, when arranged in a honeycomb shape, the strength of the air-permeable plug can be maintained high while the through-holes are densely arranged. The cross-section perpendicular to the axial direction of the through hole is not particularly limited, for example, it may be circular, triangular, quadrangular, or hexagonal. The through hole 16a among Fig. 3, Fig. 4 is the example that the cross section perpendicular to the axial direction of the honeycomb structure 16 is a circular example, and the through hole 16b in Fig. 5 is the cross section perpendicular to the axial direction of the honeycomb structure 16 is a hexagonal shape example. For example, the diameter of the through hole 16 a is 5 μm to 20 μm, and the length of the diagonal line of the through hole 16 b is 5 μm to 20 μm.

透氣性插銷13、14係可抑制流路8d內之二次性的電漿生成。當透氣性插銷13、14由緻密質陶瓷的蜂巢結構物16所構成時,係不易產生脫粒,且即使在腔室1內漂浮之顆粒侵入至貫通孔16a、16b,顆粒也不易吸附於內周面16f,並且機械強度變高。 The gas-permeable plugs 13 and 14 can suppress secondary plasma generation in the flow path 8d. When the gas-permeable plugs 13, 14 are made of dense ceramic honeycomb structure 16, it is difficult to cause threshing, and even if the particles floating in the chamber 1 invade into the through holes 16a, 16b, the particles are not easily adsorbed on the inner periphery. surface 16f, and the mechanical strength becomes high.

緻密質陶瓷例如以氧化鋁(Al2O3)、釔鋁複合氧化物(YAG、YAM及YAP的至少任一種)、氮化鋁(AlN)、氧化矽(SiO2)、碳化矽(SiC)、氮化矽(Si3N4)、氧化釔(Y2O3)或鋯酸釔為主成分者。鋯酸釔為組成式係例如由YZrOx(3≦x≦3.5)、YZr2O7、Y2ZrO5、Y2Zr2O3、Zr0.92Y0.08O1.96等所表示者。 Dense ceramics such as alumina (Al 2 O 3 ), yttrium aluminum composite oxide (at least any one of YAG, YAM, and YAP), aluminum nitride (AlN), silicon oxide (SiO 2 ), silicon carbide (SiC) , silicon nitride (Si 3 N 4 ), yttrium oxide (Y 2 O 3 ) or yttrium zirconate as the main components. Yttrium zirconate has a composition formula represented by, for example, YZrOx (3≦x≦3.5), YZr 2 O 7 , Y 2 ZrO 5 , Y 2 Zr 2 O 3 , Zr 0.92 Y 0.08 O 1.96 , and the like.

緻密質陶瓷係意指相對密度為96%以上之陶瓷,尤其可為97%以上99.8%以下。此相對密度為相對於陶瓷的理論密度之蜂巢結構物16的表觀密度之百分比。 Dense ceramics refers to ceramics with a relative density of 96% or more, especially 97% or more and 99.8% or less. The relative density is the percentage of the apparent density of the honeycomb structure 16 relative to the theoretical density of the ceramic.

又,關於陶瓷的理論密度,係分別將透氣性插銷13、14的一部分予以粉碎,並將所得到之粉體溶解於鹽酸等溶液後,藉由ICP(Inductively Coupled Plasma)發光分光分析裝置(例如,島津製作所股份有限公司製(ICPS-8100))來求取金屬成分的含量。 Also, regarding the theoretical density of ceramics, after pulverizing a part of the gas-permeable plugs 13 and 14, and dissolving the obtained powder in a solution such as hydrochloric acid, the density is measured by an ICP (Inductively Coupled Plasma) emission spectrometer (for example, , Shimadzu Corporation Co., Ltd. (ICPS-8100)) to obtain the content of metal components.

構成蜂巢結構物16之各成分係藉由使用CuK α射線之X射線繞射裝置來鑑定。若所鑑定之成分為Al2O3,則使用藉由ICP(Inductively Coupled Plasma)發光分光分析裝置所求出之Al含量之值來換算為Al2O3。若所鑑定之成分為MgO及Na2O,則可以相同的方法分別換算為MgO、Na2O。蜂巢結構物16的表觀密度可依據JIS R 1634-1998來求取。 Each component constituting the honeycomb structure 16 was identified by an X-ray diffraction device using CuK α rays. If the identified component is Al 2 O 3 , use the value of Al content obtained by ICP (Inductively Coupled Plasma) emission spectrometer to convert to Al 2 O 3 . If the identified components are MgO and Na 2 O, they can be converted to MgO and Na 2 O in the same way. The apparent density of the honeycomb structure 16 can be obtained in accordance with JIS R 1634-1998.

此外,當構成陶瓷之主成分為氧化鋁,且主成分以外的成分為氧化鎂之情形下,若將含量分別設為a質量%、b質量%時,則可使用氧化鋁及氧 化鎂各自的理論密度之值(氧化鋁=3.99g/cm3,氧化鎂=3.58g/cm3)並藉由下列之式(1)來求取陶瓷的理論密度(T.D)。 In addition, when the main component constituting ceramics is alumina and the components other than the main component are magnesia, if the contents are respectively a mass % and b mass %, each of alumina and magnesia can be used. The value of theoretical density (aluminum oxide=3.99g/cm 3 , magnesium oxide=3.58g/cm 3 ) and the theoretical density (TD) of ceramics can be obtained by the following formula (1).

T.D=1/(0.01×(a/3.99+b/3.58))‧‧‧(1) T.D=1/(0.01×(a/3.99+b/3.58))‧‧‧(1)

例如,當構成陶瓷之成分的含量係氧化鋁為99質量%、氧化鎂為1質量%時,若是使用式(1)進行計算,則陶瓷的理論密度(T.D)為3.96g/cm3,可藉由將依據JIS R 1634-1998所求取之陶瓷的表觀密度除以此理論密度(T.D)3.96g/cm3而求取相對密度。 For example, when the content of the components constituting the ceramic is 99% by mass of alumina and 1% by mass of magnesium oxide, if calculated using formula (1), the theoretical density (TD) of the ceramic is 3.96g/cm 3 , which can be The relative density was obtained by dividing the apparent density of ceramics obtained according to JIS R 1634-1998 by this theoretical density (TD) of 3.96 g/cm 3 .

圖4、圖5所示之蜂巢結構物16係具有外周側區域16c與內周側區域16d,前述外周側區域16c係沿著軸向而包含外周面16e;前述內周側區域16d係排除外周側區域16c。 The honeycomb structure 16 shown in Fig. 4 and Fig. 5 has an outer peripheral region 16c and an inner peripheral region 16d, the aforementioned outer peripheral region 16c includes the outer peripheral surface 16e along the axial direction; the aforementioned inner peripheral region 16d excludes the outer periphery Side region 16c.

包含蜂巢結構物16的外周面16e之外周側區域16c,其開氣孔率可小於排除外周側區域16c之內周側區域16d。當為如此之構成時,形成開氣孔之輪廓的長度增加,從一端面至另一端面為止之外周面16e的長度係實質上較內周面16f者更長,所以抑制電弧放電之效果高。 The outer peripheral region 16c including the outer peripheral surface 16e of the honeycomb structure 16 may have a smaller open porosity than the inner peripheral region 16d excluding the outer peripheral region 16c. With such a configuration, the length of the outline forming the air hole increases, and the length of the outer peripheral surface 16e from one end surface to the other end surface is substantially longer than that of the inner peripheral surface 16f, so the effect of suppressing arc discharge is high.

相反地,包含蜂巢結構物16的外周面16e之外周側區域16c,其開氣孔率亦可大於排除外周側區域16c之內周側區域16d。當為如此之構成時,在以接著劑將透氣性插銷13、14固定在基板支撐組件3的流路8d內之情形下,係可得到高的錨定效果,故可涵蓋長期間提升可靠度。 Conversely, the outer peripheral region 16c including the outer peripheral surface 16e of the honeycomb structure 16 may also have a larger open porosity than the inner peripheral region 16d excluding the outer peripheral region 16c. With such a configuration, when the air-permeable plugs 13, 14 are fixed in the flow path 8d of the substrate support unit 3 with an adhesive, a high anchoring effect can be obtained, so the reliability can be improved over a long period of time. .

所謂的外周側區域16c,為透氣性插銷14時,係意指相對於垂直於軸向之剖面上之蜂巢結構物16的直徑,從外周面16e朝向徑向而例如為直徑的4.5%以內之區域。 The so-called outer peripheral area 16c, when the gas-permeable plug 14 is used, refers to the diameter of the honeycomb structure 16 on the cross section perpendicular to the axial direction, from the outer peripheral surface 16e to the radial direction, for example, within 4.5% of the diameter. area.

外周側區域16c及內周側區域16d之各自的開氣孔率係可依據JIS R 1634-1998來求取。不論為何種情形,只要開氣孔率之差為0.8%以上即可。 The respective open porosity of the outer peripheral side region 16c and the inner peripheral side region 16d can be obtained in accordance with JIS R 1634-1998. In any case, it is sufficient that the difference in open porosity is 0.8% or more.

本揭示中之主成分,係意指於構成緻密質陶瓷之成分的合計100質量%當中為最多之成分。 The main component in this disclosure means the component which is the most among the total 100% by mass of the components constituting the dense ceramics.

形成貫通孔16a、16b之內周面16f的粗糙度曲線之均方根斜率(R△q)係可小於蜂巢結構物16之外周面16e的粗糙度曲線之均方根斜率(R△q)。 The root mean square slope (RΔq) of the roughness curve of the inner peripheral surface 16f forming the through holes 16a, 16b can be smaller than the root mean square slope (RΔq) of the roughness curve of the outer peripheral surface 16e of the honeycomb structure 16 .

所謂粗糙度曲線之均方根斜率(R△q),意指依據JIS B 0601:2001所測定之粗糙度曲線的基準長度1中之局部斜率dZ/dx的均方根,並且為由以下列的式所界定。 The root mean square slope (R△q) of the roughness curve refers to the root mean square of the local slope dZ/dx in the reference length 1 of the roughness curve measured in accordance with JIS B 0601:2001, and is based on the following defined by the formula.

Figure 110119497-A0202-12-0008-1
Figure 110119497-A0202-12-0008-1

均方根斜率(R△q)的數值較大時,則表面的凹凸變得陡峭,均方根斜率(R△q)的數值較小時,則表面的凹凸變得平緩。 When the value of the root mean square slope (RΔq) is large, the surface irregularities become steep, and when the value of the root mean square slope (RΔq) is small, the surface irregularities become gentle.

當內周面16f的粗糙度曲線之均方根斜率(R△q)小於外周面16e的粗糙度曲線之均方根斜率(R△q)時,在腔室1內漂浮之顆粒變得更不易吸附於內周面16f。另一方面,由於外周面16e的凹凸變得陡峭,而當以接著劑將蜂巢結構物16固定在靜電吸附部8、絕緣部5等之情形下,接著劑係沿著凹凸形狀的傾斜而從外周面16e朝向內部深度滲入,所以蜂巢結構物16能夠得到高的接著強度,而可涵蓋長期間維持高可靠度。 When the root-mean-square slope (RΔq) of the roughness curve of the inner peripheral surface 16f is smaller than the root-mean-square slope (RΔq) of the roughness curve of the outer peripheral surface 16e, the particles floating in the chamber 1 become more It is difficult to be adsorbed on the inner peripheral surface 16f. On the other hand, since the unevenness of the outer peripheral surface 16e becomes steep, when the honeycomb structure 16 is fixed to the electrostatic adsorption part 8, the insulating part 5, etc. with an adhesive, the adhesive follows the inclination of the uneven shape from Since the outer peripheral surface 16e penetrates deeply toward the inside, the honeycomb structure 16 can obtain high bonding strength and maintain high reliability over a long period of time.

蜂巢結構物16之外周面16e的粗糙度曲線之均方根斜率(R△q)亦可小於形成貫通孔16a、16b之內周面16f的粗糙度曲線之均方根斜率(R△q)。 The root mean square slope (RΔq) of the roughness curve of the outer peripheral surface 16e of the honeycomb structure 16 may also be smaller than the root mean square slope (RΔq) of the roughness curve of the inner peripheral surface 16f forming the through holes 16a, 16b .

為如此之構成時,從一端面至另一端面為止之內周面16f的局部性斜率係增加或是急遽地傾斜,其長度變得實質上較外周面16e更長,所以抑制電弧放電之效果變得更高。當將蜂巢結構物16裝著於靜電吸附部8、絕緣部5等之情形下,即使蜂巢結構物16接觸此等構件的內周面而產生造成損傷,從蜂巢結構物16脫離之粒子少,於腔室1內的空間中漂浮之顆粒亦少。此外,外周面16e所產生之應力集中亦緩和。 In such a configuration, the local slope of the inner peripheral surface 16f from one end surface to the other end surface increases or inclines sharply, and its length becomes substantially longer than that of the outer peripheral surface 16e, thereby suppressing the effect of arc discharge. get taller. When the honeycomb structure 16 is installed on the electrostatic adsorption part 8, the insulating part 5, etc., even if the honeycomb structure 16 contacts the inner peripheral surface of these members and causes damage, there are few particles detached from the honeycomb structure 16, There are also few particles floating in the space in the chamber 1 . In addition, stress concentration generated on the outer peripheral surface 16e is also relaxed.

均方根斜率(R△q)可依據JIS B 0601:2001並使用形狀解析雷射顯微鏡(Keyence股份有限公司製、VK-X1100或其後繼機種)來進行測定。就測定條件而言,首先,將照明方式設定為同軸入射照明(coaxial epi-illumination),倍率設定為240倍,截止值λs設定為無,截止值λc設定為0.08mm,截止值λf設定為無,終端效應的修正設定為有,並且將從作為測定對象之外周面16e及內周面16f之每1處的測定範圍設定為例如1420μm×1070μm,然後於每個測定範圍沿著測定範圍的長邊方向拉取設定為測定對象之線,並進行線粗糙度之計測。設定為計測對象之長度例如為1320μm。 The root mean square slope (RΔq) can be measured using a shape analysis laser microscope (manufactured by Keyence Co., Ltd., VK-X1100 or its successor) in accordance with JIS B 0601:2001. As far as the measurement conditions are concerned, first, the illumination method is set to coaxial epi-illumination, the magnification is set to 240 times, the cutoff value λs is set to none, the cutoff value λc is set to 0.08mm, and the cutoff value λf is set to none , the correction of the terminal effect is set to have, and the measurement range from each of the outer peripheral surface 16e and the inner peripheral surface 16f as the measurement object is set to, for example, 1420 μm×1070 μm, and then along the length of the measurement range in each measurement range Pull the line set as the measurement object in the side direction, and measure the line roughness. The length set as a measurement object is 1320 micrometers, for example.

圖6之(A)為顯示形成於本揭示的透氣性插銷之貫通孔之部分截切立體圖,圖6之(B)為圖6之(A)所示的區域X之放大說明圖。圖6之(A)及圖6之(B)係顯示從蜂巢結構物的外周面朝向貫通孔的軸心C與軸心C平行地研磨之狀態。 6(A) is a partially cutaway perspective view showing the through hole formed in the air-permeable plug of the present disclosure, and FIG. 6(B) is an enlarged explanatory view of the region X shown in FIG. 6(A). Fig. 6(A) and Fig. 6(B) show a state in which the axis C of the through hole is ground from the outer peripheral surface of the honeycomb structure in parallel with the axis C.

以內周面16f、與從外周面16e朝向貫通孔16a、16b的軸心進行研磨所得到的觀察對象面17之稜線18為起點,深度d為10μm以上、20μm 以下之凹部19的個數係每稜線18長度1mm為2個以下,較佳可為1個以下。凹部19係例如為陷落狀。從蜂巢結構物16的外周面16e朝向軸心C之研磨,是為了容易進行凹部19的深度d之測定。深度d的方向,係在觀察對象面17內以稜線18為起點而朝向外周面16e之方向。 Starting from the inner peripheral surface 16f and the ridge line 18 of the observation object surface 17 obtained by grinding from the outer peripheral surface 16e toward the axis centers of the through holes 16a and 16b, the depth d is 10 μm or more and 20 μm The number of the following recesses 19 is 2 or less per ridge 18 length 1 mm, preferably 1 or less. The concave portion 19 is, for example, in the shape of a depression. The purpose of grinding toward the axis C from the outer peripheral surface 16e of the honeycomb structure 16 is to facilitate the measurement of the depth d of the concave portion 19 . The direction of the depth d is a direction toward the outer peripheral surface 16 e from the ridgeline 18 in the observation object surface 17 .

在此,觀察對象面17的算術平均粗糙度(Ra)例如為0.01μm以上0.1μm以下,算術平均粗糙度(Ra)可依據JIS B 0601:2013來求取。此外,為了得到觀察對象面17,研磨材料可使用平均粒徑(D50)為1μm之WA(白鋼鋁石,White Alundum),研磨盤可使用由瀝青所構成之拋光器。 Here, the arithmetic mean roughness (Ra) of the observation object surface 17 is, for example, 0.01 μm or more and 0.1 μm or less, and the arithmetic mean roughness (Ra) can be obtained in accordance with JIS B 0601:2013. In addition, in order to obtain the observation object surface 17, WA (White Alundum) with an average particle diameter (D50) of 1 μm can be used as the abrasive material, and a polisher made of asphalt can be used as the grinding disc.

又,當為外徑達3mm以上之蜂巢結構物16時,可從蜂巢結構物16的外周面16e朝向軸心C進行切削,並留下0.1mm以上0.2mm以下的研磨裕度之後,再進行研磨。 In addition, when it is a honeycomb structure 16 with an outer diameter of 3mm or more, it can be cut from the outer peripheral surface 16e of the honeycomb structure 16 toward the axis C, leaving a grinding margin of 0.1mm to 0.2mm before cutting. grind.

然後,將以掃描型電子顯微鏡所拍攝的觀察對象面17之圖像(例如橫向2.3mm、縱向1.7mm)為對象,使用例如名為「挟

Figure 110119497-A0202-12-0010-8
」(Hasamu Monosashi)之免費軟體來測定凹部的深度d,並計算出深度d為10μm以上20μm以下之凹部19的個數即可。 Then, the image of the observation object surface 17 (for example, 2.3 mm in width and 1.7 mm in length) captured by a scanning electron microscope is used as the object, using, for example, the image named "
Figure 110119497-A0202-12-0010-8
" (Hasamu Monosashi) free software to measure the depth d of the concave portion and calculate the number of concave portions 19 whose depth d is not less than 10 μm and not more than 20 μm.

在此,之所以將凹部19的深度設定為10μm以上,係因為深度10μm是脫粒而漂浮之顆粒對電漿空間P帶來顯著的不良影響為最小之值,亦即閾值之故。 Here, the reason why the depth of the concave portion 19 is set to be 10 μm or more is because the depth of 10 μm is the minimum value, that is, the threshold value, at which the threshing and floating particles have a significant adverse effect on the plasma space P.

如此一來,由於在內周面16f上幾乎不存在凹部19,故而成為以內周面16f為起點之脫粒(掉屑(chipping))的產生受到抑制之狀態。因此,即使氣體等流體通過貫通孔16a、16b內,亦可降低脫離的粒子成為新的顆粒而漂浮在電漿空間P之情形。 In this way, since the recessed part 19 hardly exists on the inner peripheral surface 16f, the generation|occurrence|production of the threshing (chipping) starting from the inner peripheral surface 16f will be in the state suppressed. Therefore, even if a fluid such as gas passes through the through-holes 16a and 16b, it is possible to reduce the possibility that the detached particles become new particles and float in the plasma space P.

在此所謂的凹部19,換言之,是指於內周面16f開口之凹陷。 The recessed part 19 referred to here means, in other words, a depression opening in the inner peripheral surface 16f.

於觀察對象面17中,稜線18的真直度例如可為20μm以下。所謂的真直度,係意指稜線18與幾何正確的直線的偏差之大小。就真直度而言,係可以光學顯微鏡所拍攝的觀察對象面17之圖像(例如橫向1.2mm、縱向1.4mm)為對象,並使用例如名為「挟

Figure 110119497-A0202-12-0011-9
」之免費軟體來測定稜線18的真直度。只需將貫通孔16a、16b的軸向對著圖像的縱向,使圖像包含夾住內周面16f之左右的稜線18中之至少任一者,並將幾何正確的直線之長度設為1.4mm即可。 On the observation object surface 17, the straightness of the ridgeline 18 may be, for example, 20 μm or less. The so-called true straightness refers to the deviation of the ridge line 18 from a geometrically correct straight line. As far as straightness is concerned, the image of the observation object surface 17 (for example, horizontal 1.2 mm, vertical 1.4 mm) taken by an optical microscope can be used as the object, and for example, use the name "
Figure 110119497-A0202-12-0011-9
" free software to measure the true straightness of the ridge line 18. It is only necessary to align the axial directions of the through holes 16a and 16b with the longitudinal direction of the image so that the image includes at least any one of the left and right ridges 18 sandwiching the inner peripheral surface 16f, and set the length of the geometrically correct straight line to be 1.4mm is enough.

若是稜線18的真直度為20μm以下,則呈於內周面16f上幾乎不存在較大之陷落狀的凹部19之狀態,故即使氣體的流動為亂流,亦可降低新的顆粒漂浮在電漿空間P中之疑慮。 If the straightness of the ridge line 18 is 20 μm or less, there will be almost no large depressed recesses 19 on the inner peripheral surface 16f, so even if the flow of the gas is turbulent, new particles floating on the electric field can be reduced. Doubts in pulp space P.

緻密質陶瓷亦可以氧化鋁為主成分,含有鈉且其含量為20質量ppm以下。由於鈉為提高介電損耗之元素,所以當鈉的含量為20質量ppm以下時,可降低介電損耗,而可得到高的電磁波穿透性。 The dense ceramics may contain alumina as a main component and contain sodium at a content of 20 mass ppm or less. Since sodium is an element that increases dielectric loss, when the content of sodium is 20 mass ppm or less, the dielectric loss can be reduced and high electromagnetic wave penetration can be obtained.

貫通孔16a、16b亦可由從一端面至另一端面為止係彎折並貫通者。此種情形與貫通孔16a、16b的真直性高之情形相比,貫通孔16a、16b於軸向上的實質流路係變長,故變得容易抑制電弧放電的產生。 The through-holes 16a, 16b may be bent and penetrated from one end surface to the other end surface. In this case, compared with the case where the straightness of the through-holes 16a, 16b is high, the substantial flow path in the axial direction of the through-holes 16a, 16b becomes longer, so it becomes easier to suppress the occurrence of arc discharge.

貫通孔16a、16b的圓筒度例如可為0.05mm以上0.2mm以下。貫通孔16a、16b的圓筒度為0.05mm以上時,可延長電流所流通之距離,所以電子變得不易被加速,而更不易引起電弧放電的產生。貫通孔16a、16b的圓筒度為0.2mm以下時,可抑制冷卻用氣體之透氣阻力的上升,而可維持冷卻效率,且即使重複暴露於升降溫中亦不易產生應變,所以可涵蓋長期間使用。 The cylindricity of the through-holes 16a and 16b may be, for example, not less than 0.05 mm and not more than 0.2 mm. When the cylindricity of the through-holes 16a, 16b is greater than 0.05mm, the distance through which the current flows can be extended, so electrons are less likely to be accelerated, and less likely to cause arc discharge. When the cylindricity of the through-holes 16a, 16b is 0.2mm or less, the increase in the air permeability resistance of the cooling gas can be suppressed, and the cooling efficiency can be maintained, and even if it is repeatedly exposed to temperature rise and fall, it is difficult to generate strain, so it can cover a long period of time use.

緻密質陶瓷可以氧化鋁為主成分且含有鋁酸鎂,而且,從外周側區域16c所相鄰之鋁酸鎂的結晶粒子之重心間距離的平均值減去鋁酸鎂的結晶粒子之等效圓直徑的平均值後所得之值,係較從內周側區域16d所相鄰之鋁酸鎂的結晶粒子之重心間距離的平均值減去鋁酸鎂的結晶粒子之等效圓直徑的平均值後所得之值更大。 The dense ceramics may contain alumina as the main component and contain magnesium aluminate, and subtract the equivalent value of the magnesium aluminate crystal particles from the average distance between the centers of gravity of the magnesium aluminate crystal particles adjacent to the outer peripheral side region 16c. The value obtained after the average value of the circle diameter is obtained by subtracting the average value of the equivalent circle diameter of the crystal particles of magnesium aluminate from the average distance between the centers of gravity of the crystal particles of magnesium aluminate adjacent to the inner peripheral side region 16d The resulting value is greater.

當為如此之構成時,由於鋁酸鎂的線膨脹率大於氧化鋁,所以於外周側區域16c,於燒結的降溫過程中,鋁酸鎂的結晶粒子係以較氧化鋁的結晶粒子更於外周面上隆起之方式移動,故在燒結後即使為了將蜂巢結構物16載置於鋪粉以降低翹曲或為了去除應變而進行熱處理,亦可抑制成為蜂巢結構物16的被載置面之外周面與鋪粉熔著。 In such a configuration, since the linear expansion rate of magnesium aluminate is greater than that of alumina, in the outer peripheral side region 16c, during the cooling process of sintering, the crystal particles of magnesium aluminate are located more on the outer periphery than the crystal particles of alumina. The surface moves in a raised manner, so even if heat treatment is performed to place the honeycomb structure 16 on the powder floor after sintering to reduce warpage or to remove strain, it can be suppressed from becoming the outer periphery of the placed surface of the honeycomb structure 16. The noodles are fused with the flour.

另一方面,於內周側區域16d中,係成為鋁酸鎂之結晶粒子的間隔小,亦即呈分散之狀態,即使於高溫下施以拉力荷重,亦不易產生裂隙(crack)狀的孔洞(cavity),所以會改善高溫延展性。 On the other hand, in the inner peripheral side region 16d, the intervals between crystal particles of magnesium aluminate are small, that is, they are in a dispersed state, and even if a tensile load is applied at a high temperature, crack-like holes are not easily generated. (cavity), so it will improve the high temperature ductility.

鋁酸鎂之結晶粒子彼此的間隔可藉由下列方法來求取。分別以100倍的倍率來觀察緻密質陶瓷之內周側區域16d及外周側區域16c的截面,選擇平均的範圍,並藉由例如掃描型電子顯微鏡以面積成為1.044mm2(橫向的長度為1.18mm、縱向的長度為0.885mm)之範圍的方式來拍攝,而得到反射電子圖像。 The distance between crystal particles of magnesium aluminate can be obtained by the following method. Observe the cross-sections of the inner peripheral region 16d and the outer peripheral region 16c of the dense ceramics at a magnification of 100 times, select an average range, and use a scanning electron microscope, for example, to make the area 1.044mm 2 (the horizontal length is 1.18 mm). mm, and the longitudinal length is 0.885mm) to obtain a reflected electron image.

以此反射電子圖像為對象,使用圖像解析軟體「A IMAGE KUN(ver 2.52)」(註冊商標,Asahi Kasei Engineering股份有限公司製,又,於後記載為圖像解析軟體「A IMAGE KUN」時,即表示Asahi Kasei Engineering股份 有限公司製的圖像解析軟體),並藉由分散度測量的重心間距離法之手法來求取鋁酸鎂之結晶粒子的重心間距離即可。 With this reflected electron image as the object, image analysis software "A IMAGE KUN (ver 2.52)" (registered trademark, manufactured by Asahi Kasei Engineering Co., Ltd., hereinafter described as image analysis software "A IMAGE KUN" When, it means Asahi Kasei Engineering shares Co., Ltd.'s image analysis software), and the distance between the centers of gravity of the crystal particles of magnesium aluminate can be calculated by the method of the distance between the centers of gravity of the dispersion measurement.

就此手法的設定條件而言,例如只要將表示圖像的明暗之指標的閾值設定為180,亮度設定為明亮,小圖形去除面積設定為10μm2,雜訊去除濾波器設定為無即可。又,於上述測定時雖將閾值設定為180,但可因應觀察圖像的亮度來調整閾值,在已將亮度設定為明亮,2值化的方法設定為手動,並將小圖形去除面積設定為10μm2以及將雜訊去除濾波器設定為無之情況下,只需以觀察圖像所顯現之標記成為與鋁酸鎂之結晶粒子的形狀一致之方式來調整閾值即可。 As for the setting conditions of this method, for example, it is only necessary to set the threshold value of the index indicating the brightness of the image to 180, the brightness to bright, the small pattern removal area to 10 μm 2 , and the noise removal filter to be absent. In addition, although the threshold is set to 180 in the above measurement, the threshold can be adjusted in response to the brightness of the observed image. After the brightness has been set to bright, the method of binarization is set to manual, and the small pattern removal area is set to In the case of 10 μm 2 and the noise removal filter is set to none, it is only necessary to adjust the threshold so that the mark displayed on the observed image becomes consistent with the shape of the crystal particles of magnesium aluminate.

又,當鋁酸鎂的結晶粒子相對於其他部分之對比難以辨識之情形下,只需將結晶粒子黑色化後求取結晶粒子的重心間距離即可。在此情形下,例如只需將閾值設定為85,亮度設定為暗,小圖形去除面積設定為10μm2,雜訊去除濾波器設定為無即可。 Also, when it is difficult to distinguish the crystal particles of magnesium aluminate compared to other parts, it is only necessary to obtain the distance between the centers of gravity of the crystal particles after blackening the crystal particles. In this case, for example, it is only necessary to set the threshold value to 85, the brightness to dark, the small pattern removal area to 10 μm 2 , and the noise removal filter to none.

鋁酸鎂之結晶粒子的等效圓直徑只需以上述反射電子圖像為對象,使用圖像解析軟體「A IMAGE KUN」,並藉由粒子解析之手法來求取即可。此手法的設定條件亦只須設為與分散度測量的重心間距離法中所使用之設定條件相同即可。 The equivalent circle diameter of the crystal particles of magnesium aluminate can be obtained by using the image analysis software "A IMAGE KUN" and the method of particle analysis by using the above-mentioned reflected electron image as the object. The setting conditions of this method need only be set to be the same as those used in the distance method between centers of gravity for dispersion measurement.

在此,鋁酸鎂係使用X射線繞射裝置進行鑑定,關於上述反射電子圖像中所觀察之結晶粒子是否為鋁酸鎂,則是使用電子探針顯微分析儀(EPMA,Electron Probe Micro Analyzer)進行檢測,若有檢測出鋁及鎂,即可視為結晶粒子係由鋁酸鎂所構成。 Here, magnesium aluminate is identified using an X-ray diffraction device, and whether the crystal particles observed in the above reflected electron image are magnesium aluminate is identified using an electron probe microanalyzer (EPMA, Electron Probe Micro Analyzer), if aluminum and magnesium are detected, it can be considered that the crystal particles are composed of magnesium aluminate.

緻密質陶瓷亦可以碳化矽為主成分且含有金屬矽。在此情形下,碳化矽例如為70質量%以上92質量%以下,金屬矽為8質量%以上30質量%以下。碳化矽之楊氏模數(動態彈性模數)及3點彎曲強度的機械特性係較金屬矽之楊氏模數(動態彈性模數)及3點彎曲強度的機械特性更為優異。因此,於碳化矽的含量為70質量%以上之情形下,緻密質陶瓷的機械特性會有所提升。另一方面,金屬矽的熱傳導率係高於碳化矽的熱傳導率。故而,當碳化矽的含量為92質量%以下之情形下,緻密質陶瓷的熱傳導性會有所提升。因此,若是碳化矽的含量為70質量%以上92質量%以下,則可兼顧機械特性與熱傳導性。 Dense ceramics can also contain silicon carbide as the main component and metal silicon. In this case, silicon carbide is, for example, 70% by mass or more and 92% by mass or less, and metal silicon is 8% by mass or more and 30% by mass or less. The mechanical properties of Young's modulus (dynamic modulus of elasticity) and 3-point bending strength of silicon carbide are better than those of metal silicon. Therefore, when the content of silicon carbide is more than 70% by mass, the mechanical properties of dense ceramics will be improved. On the other hand, the thermal conductivity of metallic silicon is higher than that of silicon carbide. Therefore, when the content of silicon carbide is less than 92% by mass, the thermal conductivity of the dense ceramic will be improved. Therefore, if the content of silicon carbide is not less than 70% by mass and not more than 92% by mass, both mechanical properties and thermal conductivity can be achieved.

緻密質陶瓷所含有之各成分可藉由X射線繞射裝置進行鑑定,碳化矽及矽的各別含量可藉由裏特沃爾德法(Rietveld method)來求取。 The components contained in dense ceramics can be identified by X-ray diffraction equipment, and the respective contents of silicon carbide and silicon can be obtained by the Rietveld method.

金屬矽之重心間距離的平均值與金屬矽之等效圓直徑的平均值之差並無限定,例如可為8μm以上20μm以下。此差為8μm以上時,碳化矽的分布密度會變高。因此,會使緻密質陶瓷的剛性提升,且剛性的偏向亦降低。另一方面,此差為20μm以下時,緻密質陶瓷的熱傳導性會提升,熱傳導性的偏向亦降低。 The difference between the average value of the center-of-gravity distance of metal silicon and the average value of the equivalent circle diameter of metal silicon is not limited, for example, it may be 8 μm or more and 20 μm or less. When the difference is 8 μm or more, the distribution density of silicon carbide becomes high. Therefore, the rigidity of dense ceramics is improved, and the bias of rigidity is also reduced. On the other hand, when the difference is 20 μm or less, the thermal conductivity of dense ceramics is improved, and the unevenness of thermal conductivity is also reduced.

緻密質陶瓷之金屬矽的重心間距離可藉由下列方法來求取。 The distance between centers of gravity of silicon metal in dense ceramics can be obtained by the following method.

首先,裁切出緻密質陶瓷的一部分,並從使用金剛石研磨粒,由研磨剖面所得到之鏡面中選擇平均的範圍,並藉由掃描型電子顯微鏡以各者面積成為0.191mm2(橫向的長度為351μm、縱向的長度為545μm)之範圍的方式來拍攝,而得到觀察圖像。 First, cut out a part of the dense ceramics, and select an average range from the mirror surface obtained by grinding the cross section using diamond abrasive grains, and use a scanning electron microscope to determine the area of each to be 0.191mm 2 (horizontal length Observation images were obtained by shooting in the range of 351 μm and 545 μm in the longitudinal direction.

以此觀察圖像為對象,使用圖像解析軟體「A IMAGE KUN(ver 2.52)」(註冊商標、Asahi Kasei Engineering股份有限公司製,於之後的說明中記 載為圖像解析軟體「A IMAGE KUN」時,即表示Asahi Kasei Engineering股份有限公司製的圖像解析軟體),並藉由分散度測量的重心間距離法之手法來求取矽的重心間距離。 Using this observation image as a target, use the image analysis software "A IMAGE KUN (ver 2.52)" (registered trademark, manufactured by Asahi Kasei Engineering Co., Ltd., described in the following description) When loaded as the image analysis software "A IMAGE KUN", it refers to the image analysis software manufactured by Asahi Kasei Engineering Co., Ltd.), and the distance between the centers of gravity of silicon is obtained by the method of the distance between the centers of gravity of the dispersion measurement .

就此手法的設定條件而言,係將表示圖像的明暗之指標的閾值設定為190至195,亮度設定為明亮,小圖形去除面積設定為1μm2,雜訊去除濾波器設定為有。 As for the setting conditions of this method, the threshold value of the index indicating the brightness of the image is set to 190 to 195, the brightness is set to bright, the small pattern removal area is set to 1 μm 2 , and the noise removal filter is set to on.

矽的等效圓直徑係以上述觀察圖像為對象,並藉由粒子解析之手法來求取。 The circle-equivalent diameter of silicon is obtained by using the above-mentioned observation image as an object and by means of particle analysis.

此手法的設定條件係與重心間距離法中所使用之設定條件相同。此外,蜂巢結構物16的至少外周面可具備由具有導電性之層或膜所構成之第1導電部。 The setting conditions of this method are the same as those used in the method of distance between centers of gravity. Moreover, at least the outer peripheral surface of the honeycomb structure 16 may be equipped with the 1st electroconductive part comprised from the layer or film which has electroconductivity.

近來,施加於靜電吸附部8之高頻(RF)電力係逐漸變高。當此高頻電力變高時,於流路8d的內部或附近會有產生電弧放電等異常放電之情形。亦即,若於基板支撐組件3施加高頻(RF)電力時,則會因為靜電吸附部8的靜電電容而在被處理構件W與靜電吸附部8的內面之間產生電位差。由於此電位差的產生,在流路8d的內部會產生RF電位的電位差,當此電位差超過產生放電之臨界值時,會產生異常放電。 Recently, the high-frequency (RF) power applied to the electrostatic adsorption part 8 has gradually become higher. When this high-frequency power becomes high, abnormal discharge such as arc discharge may occur in or near the flow path 8d. That is, when RF power is applied to the substrate supporting unit 3 , a potential difference is generated between the member W to be processed and the inner surface of the electrostatic adsorption unit 8 due to the electrostatic capacity of the electrostatic adsorption unit 8 . Due to the generation of this potential difference, a potential difference of RF potential is generated inside the flow path 8d, and when the potential difference exceeds the critical value for generating discharge, abnormal discharge will occur.

於外周面具備第1導電部時,因為容易沿著外周面去除靜電,故容易抑制流路8d內的異常放電。 When the first conductive portion is provided on the outer peripheral surface, it is easy to remove static electricity along the outer peripheral surface, so it is easy to suppress abnormal discharge in the flow path 8d.

蜂巢結構物16的至少任一端面可具備由具有導電性之層或膜所構成之第2導電部。於端面具備第2導電部時,因為容易沿著具備第2導電部之端面去除靜電,故可進一步抑制流路8d內的異常放電。 At least one end surface of the honeycomb structure 16 may be provided with a second conductive portion made of a conductive layer or film. When the second conductive portion is provided on the end face, since static electricity is easily removed along the end face provided with the second conductive portion, abnormal discharge in the flow path 8d can be further suppressed.

蜂巢結構物16的內周面可具備由具有導電性之層或膜所構成之第3導電部。於內周面具備第3導電部時,因為容易沿著內周面來去除靜電,故可進一步抑制流路8d內的異常放電。 The inner peripheral surface of the honeycomb structure 16 may include a third conductive portion made of a conductive layer or film. When the third conductive portion is provided on the inner peripheral surface, since static electricity is easily removed along the inner peripheral surface, abnormal discharge in the flow path 8d can be further suppressed.

在此所謂的具有導電性,係意指表面電阻值為104Ω以下。表面電阻值只要使用二探針式電阻計(PROSTAT公司製、PRS-802),並將施加電壓設定為100V來求取即可。 Here, having conductivity means that the surface resistance value is 10 4 Ω or less. The surface resistance value may be obtained by using a two-probe resistance meter (prostat, PRS-802) and setting the applied voltage to 100V.

第1導電部、第2導電部及第3導電部係由例如石墨、石墨烯(graphene)、碳奈米管、富勒烯(fullerene)、非晶質碳及DLC(類鑽碳,Diamond-Like Carbon)的至少任一種所構成。 The first conductive portion, the second conductive portion, and the third conductive portion are made of, for example, graphite, graphene, carbon nanotubes, fullerene, amorphous carbon, and DLC (diamond-like carbon, Diamond- At least any one of Like Carbon).

再者,就浸漬在濃度為35質量%的鹽酸,並從浸漬開始經過72小時後,以下列式(2)所表示之每單位面積的質量變化C而言,係可為0.3g/cm2以下。 Furthermore, after immersion in hydrochloric acid with a concentration of 35% by mass, and after 72 hours from the start of immersion, the mass change C per unit area represented by the following formula (2) can be 0.3 g/cm 2 the following.

C=(W0-W1)/A‧‧‧(2) C=(W 0 -W 1 )/A‧‧‧(2)

(W0:浸漬前之試驗片的質量(g),W1:從浸漬開始經過72小時後之試驗片的質量(g),A:試驗片於浸漬前的表面積(cm2)) (W 0 : mass (g) of the test piece before immersion, W 1 : mass (g) of the test piece 72 hours after immersion, A: surface area (cm 2 ) of the test piece before immersion)

當每單位面積的質量變化C為0.3g/cm2以下時,分別構成第1導電部、第2導電部及第3導電部的粒子係不易剝離,故可涵蓋長期間浸漬在鹽酸,而提高污垢的去除效果。 When the mass change C per unit area is 0.3g/cm or less, the particle systems that respectively constitute the first conductive part, the second conductive part and the third conductive part are not easy to peel off, so it can cover a long period of immersion in hydrochloric acid, and improve Dirt removal effect.

如上所述,本揭示的基板支撐組件3係具備:靜電吸附構件8以及本揭示的透氣性插銷13、14而成者;其中,前述靜電吸附構件8係具有:基材8b,係由具有吸附有被處理構件W之吸附面8a之板狀的陶瓷所構成;內部 電極10,係位於基材8b內之,以及流路8d,係位於沿著基材8b的厚度方向;前述本揭示的透氣性栓塞13、14係裝著於流路8d的內部。 As mentioned above, the substrate supporting assembly 3 of the present disclosure is provided with: an electrostatic adsorption member 8 and the air-permeable plugs 13 and 14 of the present disclosure; wherein, the aforementioned electrostatic adsorption member 8 has a base material 8b, which has an adsorption It is composed of plate-shaped ceramics with the adsorption surface 8a of the member W to be processed; the interior The electrode 10 is located in the base material 8b, and the flow channel 8d is located along the thickness direction of the base material 8b; the aforementioned gas-permeable plugs 13, 14 of the present disclosure are mounted inside the flow channel 8d.

透氣性插銷13、14係不易產生脫粒,且即使漂浮在腔室1內之顆粒侵入至貫通孔16a、16b,顆粒亦不易吸附於內周面16f,而且因為機械強度高,故可涵蓋長期間使用。 The air-permeable pins 13 and 14 are not easy to cause threshing, and even if the particles floating in the chamber 1 invade into the through holes 16a and 16b, the particles are not easy to be adsorbed on the inner peripheral surface 16f, and because of the high mechanical strength, it can cover a long period of time use.

此外,基材8b及透氣性插銷13、14係由以氧化鋁為主成分之陶瓷所構成,透氣性插銷13、14之氧化鋁的純度(含量)係可較基材8b之氧化鋁的純度(含量)更高。當氧化鋁的純度變高時,對於電漿之抗蝕性會提升,且耐電壓性會變高,故可抑制電弧放電的產生。 In addition, the substrate 8b and the air-permeable plugs 13 and 14 are made of ceramics mainly composed of alumina, and the purity (content) of the alumina of the air-permeable plugs 13 and 14 is comparable to that of the alumina of the substrate 8b. (content) is higher. When the purity of alumina becomes higher, the corrosion resistance to plasma will be improved, and the withstand voltage will be higher, so the generation of arc discharge can be suppressed.

尤其,透氣性插銷13、14中之氧化鋁的純度可為99.6質量%以上。此外,鈣的含量可為0.01質量%以下。當鈣的含量為0.01質量%以下時,即使以檸檬酸來洗淨透氣性插銷13、14,也由於對於檸檬酸為抗蝕性低的鈣較少,而可降低鈣源成為顆粒而污染腔室1內之疑慮。 In particular, the purity of the alumina in the air-permeable plugs 13 and 14 may be 99.6% by mass or more. In addition, the content of calcium may be 0.01% by mass or less. When the calcium content is less than 0.01% by mass, even if the gas-permeable plugs 13 and 14 are cleaned with citric acid, there is less calcium with low corrosion resistance to citric acid, which can reduce the calcium source from becoming particles and contaminating the chamber. Doubts in Room 1.

此外,如圖1之(b)所示,噴淋板2可係將本揭示的透氣性插銷2d裝著於第2流路2c的內部。當為如此之構成時,可抑制從電漿空間P朝向噴淋板2產生電漿及顆粒的逆流,或是抑制第2流路2c內所產生之異常放電,而可防止恐因產生異常放電而產生的起火。 In addition, as shown in (b) of FIG. 1 , the shower plate 2 may be equipped with the air-permeable plug 2d of the present disclosure inside the second flow path 2c. With such a configuration, it is possible to suppress the backflow of plasma and particles from the plasma space P toward the shower plate 2, or suppress the abnormal discharge generated in the second flow path 2c, thereby preventing the occurrence of abnormal discharge that may be caused. resulting in a fire.

接著,說明本揭示之透氣性插銷的製造方法的一例。 Next, an example of the method of manufacturing the air-permeable plug of the present disclosure will be described.

在欲得到由以氧化鋁為主成分之緻密質陶瓷所構成之透氣性插銷時,首先係將純度為99.6質量%以上且平均粒徑(D50)為1μm以上3μm以下之氧化鋁的粉末、黏合劑(binder)、潤滑劑以及溶劑進行混合。 When it is desired to obtain a gas-permeable plug composed of dense ceramics mainly composed of alumina, firstly, the powder of alumina with a purity of 99.6 mass% or more and an average particle size (D50) of 1 μm to 3 μm is bonded. Binder, lubricant and solvent are mixed.

氧化鋁的粉末可含有氧化鎂或鈉。氧化鋁的粉末100質量%中之氧化鎂的含量係例如為0.1質量%以上0.3質量%以下。氧化鋁的粉末100質量%中之鈉的含量係例如為20質量ppm以下。在此,平均粒徑(D50)可藉由雷射繞射式粒度分布測定法來求取。 The powder of alumina may contain magnesia or sodium. The content of magnesium oxide in 100% by mass of alumina powder is, for example, 0.1% by mass or more and 0.3% by mass or less. The content of sodium in 100% by mass of alumina powder is, for example, 20 mass ppm or less. Here, the average particle diameter (D50) can be calculated|required by the laser diffraction particle size distribution measurement method.

在欲得到以碳化矽為主成分之緻密質陶瓷所構成之透氣性插銷時,首先係準備粗粒狀粉末及微粒狀粉末來作為碳化矽的粉末,並連同離子交換水及分散劑藉由球磨機或珠磨機進行粉碎混合40至60小時而形成漿液。在此,經粉碎混合後之微粒狀粉末及粗粒狀粉末的各自之粒徑範圍為0.4μm以上4μm以下、11μm以上34μm以下。 When it is desired to obtain a gas-permeable plug made of dense ceramics with silicon carbide as the main component, firstly, coarse-grained powder and granular powder are prepared as silicon carbide powder, and together with ion-exchanged water and dispersant, pass through a ball mill Or bead mill for crushing and mixing for 40 to 60 hours to form a slurry. Here, the respective particle diameter ranges of the pulverized and mixed fine-grained powder and the coarse-grained powder are not less than 0.4 μm and not more than 4 μm, and not more than 11 μm and not more than 34 μm.

接著,於所得到之漿液中,添加由碳化硼的粉末及非晶質狀的碳粉末或酚樹脂所構成之助燒結劑、以及黏合劑並進行混合。 Next, to the obtained slurry, a sintering aid consisting of boron carbide powder, amorphous carbon powder, or phenolic resin, and a binder are added and mixed.

就微粒狀粉末與粗粒狀粉末之質量比率而言,例如微粒狀粉末可為6質量%以上15質量%以下,粗粒狀粉末可為85質量%以上94質量%以下。 The mass ratio of the fine-grained powder to the coarse-grained powder is, for example, 6 mass % to 15 mass % for the fine-grained powder, and 85 mass % to 94 mass % for the coarse-grained powder.

黏合劑例如為甲基纖維素(MC)、羧甲基纖維素(CMC)、羥丙基纖維素(HPC)、聚乙烯醇(PVA)、聚乙烯丁醛(PVB)等。相對於氧化鋁或碳化矽的粉末100質量份,黏合劑的總量可設為以固形分計係2質量份以上8質量份以下。黏合劑的固形分位於此範圍時,可使擠壓成形的流動性或成形體的形狀保持性維持為高。 The binder is, for example, methyl cellulose (MC), carboxymethyl cellulose (CMC), hydroxypropyl cellulose (HPC), polyvinyl alcohol (PVA), polyvinyl butyral (PVB) and the like. With respect to 100 parts by mass of alumina or silicon carbide powder, the total amount of the binder may be 2 parts by mass or more and 8 parts by mass or less in terms of solid content. When the solid content of the binder is within this range, the fluidity of the extrusion molding and the shape retention of the molded body can be maintained high.

潤滑劑為蠟、甘油、硬脂酸等。相對於氧化鋁或碳化矽的粉末100質量份,潤滑劑的總量可設為以固形分計係1質量份以上8質量份以下。 Lubricants are waxes, glycerin, stearic acid and the like. With respect to 100 parts by mass of alumina or silicon carbide powder, the total amount of the lubricant may be 1 to 8 parts by mass in terms of solid content.

此外,溶劑例如為水,尤其是離子交換水的雜質量較少,故為較佳。溶劑係以使混練步驟中之胚土的黏度成為15000Pa‧s以上22000Pa‧s以下 之方式,而設成相對於氧化鋁的粉末100質量份為例如10質量份以上20質量份以下。 In addition, the solvent is, for example, water, and especially ion-exchanged water is preferable since the amount of impurities is small. The solvent is used so that the viscosity of the clay in the kneading step is not less than 15000Pa‧s and not more than 22000Pa‧s In this way, it is set to be, for example, 10 parts by mass or more and 20 parts by mass or less with respect to 100 parts by mass of alumina powder.

以上述的調配比率將氧化鋁或碳化矽的粉末、黏合劑、潤滑劑及溶劑進行混合之後,使用萬能混合機或3輥混練機等來進行混練,而得到黏度例如為15000Pa‧s以上22000Pa‧s以下之胚土。黏度的測定可藉由使用定載擠出型流變儀(島津製作所股份有限公司製Shimadzu Flow Tester CFT-500C)之流動特性評估法來求取。 After mixing alumina or silicon carbide powder, binder, lubricant and solvent at the above-mentioned blending ratio, use a universal mixer or a 3-roll kneading machine to knead to obtain a viscosity of, for example, 15000Pa‧s or more to 22000Pa‧ Embryo soil below s. Viscosity can be measured by a flow characteristic evaluation method using a constant-load extrusion rheometer (Shimadzu Flow Tester CFT-500C, manufactured by Shimadzu Corporation).

使用裝設有用以形成成形體的貫通孔之壓模的擠壓成形機將此胚土成形,而得到於軸向上具有複數個貫通孔之蜂巢狀的成形體。 The clay was molded using an extrusion molding machine equipped with a die for forming through holes for forming a molded body to obtain a honeycomb shaped molded body having a plurality of through holes in the axial direction.

在此,由於形成蜂巢結構物的貫通孔之內周面以及蜂巢結構物的外周面之粗糙度曲線中的均方根斜率(R△q)會受到壓模之轉印面的影響,所以適當地調整壓模的轉印面即可。 Here, since the root-mean-square slope (RΔq) of the roughness curve of the inner peripheral surface of the through-hole forming the honeycomb structure and the outer peripheral surface of the honeycomb structure is affected by the transfer surface of the stamper, it is appropriate to Just adjust the transfer surface of the stamper.

在將成形體裁切成為例如長度為20mm以上80mm以下之後,進行乾燥以去除成形體內的水分。乾燥溫度例如為40至70℃。當乾燥後之成形體的主成分為氧化鋁之情形下,係將成形體在大氣環境中以保持溫度1550℃至1650℃進行燒製0.5小時以上5小時以下,藉此可得到本揭示的透氣性插銷。 After the molded body is cut to a length of, for example, 20 mm to 80 mm, it is dried to remove moisture in the molded body. The drying temperature is, for example, 40 to 70°C. When the main component of the dried molded body is alumina, the molded body is fired in the atmosphere at a temperature of 1550°C to 1650°C for 0.5 hours to 5 hours, thereby obtaining the air permeability of the present disclosure. sex plug.

於乾燥後之成形體的主成分為碳化矽之情形下,在氮環境中,將溫度設定為450℃以上650℃以下,保持時間設定為2小時以上10小時以下來進行脫脂,而得到脫脂體。接著,在氬氣等惰性氣體的減壓環境中,以保持溫度1800℃至2200℃將此脫脂體燒製0.5小時以上5小時以下,藉此可得到本揭示的透氣性插銷。 When the main component of the molded body after drying is silicon carbide, degrease by setting the temperature at 450°C to 650°C and holding time at 2 hours to 10 hours in a nitrogen atmosphere to obtain a degreased body . Next, the degreased body is fired at a temperature of 1800° C. to 2200° C. for 0.5 hours to 5 hours in a depressurized environment of an inert gas such as argon, thereby obtaining the air-permeable plug of the present disclosure.

就本揭示之透氣性插銷的製造方法的另一例進行說明。 Another example of the manufacturing method of the air-permeable plug of the present disclosure will be described.

透氣性插銷的製造方法係包含下述步驟(a)至(e)。 The manufacturing method of the air-permeable plug comprises the following steps (a) to (e).

步驟(a):將累積分布曲線之累積95體積%的粒徑為6.5μm以下之氧化鋁為主成分之粉末、蠟、分散劑以及塑化劑收納於容器,並進行攪拌而得到漿液之步驟。 Step (a): The step of storing the powder, wax, dispersant, and plasticizer mainly composed of alumina whose particle size is 6.5 μm or less in the cumulative distribution curve of the cumulative 95% by volume, and stirring to obtain a slurry .

步驟(b):預熱漿液之步驟。 Step (b): the step of preheating the slurry.

步驟(c):將經預熱之漿液進行脫泡處理之步驟。 Step (c): a step of degassing the preheated slurry.

步驟(d):將漿液注入至外周側圍繞有加熱手段之成型模具而得到成形體之步驟。 Step (d): A step of injecting the slurry into a molding die surrounded by heating means on the outer peripheral side to obtain a molded body.

步驟(e):燒製成形體之步驟。 Step (e): the step of firing into a shape.

步驟(a)係將原料收納於容器,並進行攪拌而得到漿液之步驟。原料為以氧化鋁為主成分之粉末、蠟、分散劑及塑化劑。 Step (a) is a step of storing raw materials in a container and stirring them to obtain a slurry. The raw materials are powder, wax, dispersant and plasticizer mainly composed of alumina.

以氧化鋁為主成分之粉末,其累積分布曲線之累積95體積%的粒徑為6.5μm以下。藉由使用如此之粉末,可得到例如相對密度為96%以上之緻密質陶瓷,並減少於內周面16f形成凹部19之情形。尤其是可藉由減小所使用之粉末的平均粒徑而進一步減少凹部19。主成分之粉末的純度並無限定,可使用具有例如99.5質量%以上的純度之粉末。 For powders mainly composed of alumina, the particle size of the cumulative 95% by volume of the cumulative distribution curve is 6.5 μm or less. By using such a powder, for example, a dense ceramic having a relative density of 96% or more can be obtained, and the formation of the recesses 19 on the inner peripheral surface 16f is reduced. In particular, the recesses 19 can be further reduced by reducing the average particle size of the powder used. The purity of the powder of the main component is not limited, and powder having a purity of, for example, 99.5% by mass or higher can be used.

所謂的累積分布曲線,係意指在2維的圖表中以橫軸為粒徑、以縱軸為粒徑的累積百分率之情形下,表示粒徑的累積分布之曲線。累積分布曲線可藉由雷射繞射散射法,並使用例如MicrotracBEL公司製的粒徑分布測定裝置(MT3300或其後繼機種)來求取。 The so-called cumulative distribution curve means a curve showing the cumulative distribution of particle diameters in a two-dimensional graph where the horizontal axis represents the particle diameter and the vertical axis represents the cumulative percentage of the particle diameter. The cumulative distribution curve can be obtained by the laser diffraction scattering method using, for example, a particle size distribution measuring device (MT3300 or its successor) manufactured by MicrotracBEL.

相對於上述粉末100質量份,係以蠟為13質量份以上14質量份以下,分散劑為0.4質量份以上0.5質量份以下,塑化劑為1.4質量份以上1.5 質量份以下之比率來使用。蠟可列舉例如:石蠟(paraffin wax)、蜜蠟等。分散劑可列舉例如:高級脂肪酸、高級脂肪酸酯等。塑化劑可列舉例如:高級脂肪酸、鄰苯二甲酸酯等。 With respect to 100 parts by mass of the above powder, the amount of wax is 13 parts by mass to 14 parts by mass, the dispersant is 0.4 parts by mass to 0.5 parts by mass, and the plasticizer is 1.4 parts by mass to 1.5 parts by mass. Use the ratio of parts by mass or less. As wax, paraffin wax (paraffin wax), beeswax etc. are mentioned, for example. As a dispersant, a higher fatty acid, a higher fatty acid ester, etc. are mentioned, for example. As a plasticizer, a higher fatty acid, a phthalate, etc. are mentioned, for example.

將上述粉末、蠟、分散劑及塑化劑收納於例如已加熱至90℃以上140℃以下之容器內。此時,蠟、分散劑及塑化劑係成為液體。容器例如為樹脂製。將容器安裝於攪拌機,並使容器進行3分鐘的自轉公轉(自轉公轉混練處理),藉此攪拌上述粉末、蠟、分散劑及塑化劑,而得到漿液。 The above-mentioned powder, wax, dispersant, and plasticizer are stored in a container heated to, for example, 90°C or higher and 140°C or lower. At this time, the wax, dispersant and plasticizer become liquid. The container is made of resin, for example. The container was attached to a mixer, and the container was rotated on its own axis for 3 minutes (rotation-revolution kneading process), thereby stirring the above-mentioned powder, wax, dispersant, and plasticizer to obtain a slurry.

於步驟(b)中,係將步驟(a)中所得到之漿液預熱。藉由進行預熱,漿液的流動性會變高,而可進一步提高步驟(c)中所得到之效果。預熱係例如在120℃以上180℃以下的溫度下進行。 In step (b), the slurry obtained in step (a) is preheated. By preheating, the fluidity of the slurry will become higher, and the effect obtained in the step (c) can be further improved. Preheating is performed at a temperature of, for example, 120°C to 180°C.

於步驟(c)中,係將在步驟(b)中經預熱之漿液供至脫泡處理。藉由進行脫泡處理,可減少漿液所包含之氣泡,故可得到相對密度更高之緻密質陶瓷。脫泡處理係例如將所得到之漿液填充於注射器,並使用脫泡固定具,使注射器進行1分鐘的自轉公轉,同時進行脫泡。 In step (c), the slurry preheated in step (b) is subjected to degassing treatment. By performing defoaming treatment, the air bubbles contained in the slurry can be reduced, so dense ceramics with higher relative density can be obtained. For defoaming treatment, for example, a syringe is filled with the obtained slurry, and defoaming is carried out while the syringe is rotated on its own axis for 1 minute using a defoaming fixture.

於步驟(d)中,係將步驟(c)中經脫泡處理後之漿液注入至成型模具而得到成形體。成型模具係使用外周側圍繞有加熱手段之成型模具。如此一來,藉由使用外周側圍繞有加熱手段之成型模具,而能夠得到圖3至圖5所示之蜂巢結構物。加熱手段並無限定,可列舉例如加熱器等。藉由加熱手段,係例如可以與注入至成型模具時之漿液溫度的差成為50℃以內之方式來進行加熱。成形體的形狀並無限定,可如圖3至圖5所示般具有圓柱狀,亦可具有角柱狀等其他形狀。 In the step (d), the slurry after the defoaming treatment in the step (c) is injected into a molding mold to obtain a molded body. The molding die is a molding die with heating means around the outer peripheral side. In this way, the honeycomb structure shown in FIGS. 3 to 5 can be obtained by using a molding die with heating means surrounding its outer periphery. Heating means is not limited, For example, a heater etc. are mentioned. By means of heating, for example, it is possible to heat so that the temperature difference from the slurry temperature at the time of pouring into the molding die is within 50°C. The shape of the formed body is not limited, and may have a cylindrical shape as shown in FIGS. 3 to 5 , or may have other shapes such as a prismatic shape.

於步驟(e)中,係燒製於步驟(c)所得到之成形體。燒製只要係例如在大氣環境下於1400℃以上1700℃以下保持1小時以上3小時以下即可。以如此方式,能夠得到本揭示的透氣性插銷,其係具備在軸向上具有複數個貫通孔之緻密質陶瓷的蜂巢結構物。於以如此方式所得到之透氣性插銷13、14中,以形成貫通孔16a、16b之內周面16f與從蜂巢結構物的外周面16e朝向貫通孔16a、16b的軸心C進行研磨所得到之觀察對象面17之稜線18為起點,深度d為10μm以上20μm以下之凹部19的個數係每稜線18長度1mm2個以下。 In step (e), the molded body obtained in step (c) is fired. The firing may be carried out, for example, under an air atmosphere at 1400° C. to 1700° C. for 1 hour to 3 hours. In this manner, the air-permeable plug of the present disclosure, which is a dense ceramic honeycomb structure having a plurality of through holes in the axial direction, can be obtained. In the gas-permeable pins 13 and 14 obtained in this way, the inner peripheral surface 16f forming the through-holes 16a and 16b and the axis C from the outer peripheral surface 16e of the honeycomb structure toward the through-holes 16a and 16b are ground. The ridgeline 18 of the observation object surface 17 is the starting point, and the number of recesses 19 having a depth d of 10 μm to 20 μm is 1 mm or less per ridgeline 18 .

為了得到蜂巢結構物的至少外周面係具備第1導電部之透氣性插銷,只要於乾燥後之成形體的外周面塗佈或噴霧含有石墨、石墨烯、碳奈米管、富勒烯、非晶質碳等碳之2-丙醇(IPA)溶液後,進行上述燒製即可。 In order to obtain a gas-permeable plug with at least the outer peripheral surface of the honeycomb structure having the first conductive part, it is only necessary to coat or spray the outer peripheral surface of the dried molded body containing graphite, graphene, carbon nanotubes, fullerenes, After the 2-propanol (IPA) solution of carbon such as crystalline carbon, the above-mentioned firing can be carried out.

為了得到蜂巢結構物的至少任一端面係具備第2導電部之透氣性插銷,只要於乾燥後之成形體的端面塗佈或噴霧上述2-丙醇(IPA)溶液後,進行上述燒製即可。 In order to obtain a gas-permeable plug with a second conductive part on at least any end face of the honeycomb structure, it is only necessary to apply or spray the above-mentioned 2-propanol (IPA) solution on the end face of the dried molded body, and then perform the above-mentioned firing. Can.

為了得到蜂巢結構物的內周面具備第3導電部之透氣性插銷,只要於乾燥後之成形體的內周面塗佈或噴霧上述2-丙醇(IPA)溶液後,進行上述燒製即可。 In order to obtain a gas-permeable plug with a third conductive part on the inner peripheral surface of the honeycomb structure, it is only necessary to apply or spray the above-mentioned 2-propanol (IPA) solution on the inner peripheral surface of the dried molded body, and then perform the above-mentioned firing. Can.

當藉由DLC來形成第1導電部、第2導電部及第3導電部的至少任一者之情形下,只要使用電漿離子注入法而在藉由上述燒製所得到之燒結體形成由DLC所構成之膜後,將溫度設定為200℃以上1000℃以下,並進行1小時以上的熱處理即可。 When at least any one of the first conductive part, the second conductive part, and the third conductive part is formed by DLC, the sintered body obtained by the above-mentioned firing can be formed by using the plasma ion implantation method. After the film formed by DLC, the temperature is set at 200°C to 1000°C, and heat treatment is performed for at least 1 hour.

藉由上述製造方法所得到之本揭示的透氣性插銷係不易產生脫粒,且即使漂浮於腔室內之顆粒侵入至貫通孔16a、16b,顆粒亦不易吸附於內周面16f,而且機械強度高,故可涵蓋長期間使用。 The gas-permeable plug of the present disclosure obtained by the above-mentioned manufacturing method is not easy to cause threshing, and even if the particles floating in the chamber invade into the through holes 16a, 16b, the particles are not easily adsorbed on the inner peripheral surface 16f, and the mechanical strength is high. Therefore, it can cover long-term use.

2b:氣體供給部 2b: Gas supply part

2c:第2流路 2c: The second channel

2d:透氣性插銷 2d: breathable plug

Claims (20)

一種透氣性插銷,係具備緻密質陶瓷的蜂巢結構物,該緻密質陶瓷的蜂巢結構物係於軸向上具有複數個貫通孔,其中,形成前述貫通孔之內周面的粗糙度曲線之均方根斜率(R△q)係小於前述蜂巢結構物之外周面的粗糙度曲線之均方根斜率(R△q)。 A gas-permeable plug is provided with a dense ceramic honeycomb structure, and the dense ceramic honeycomb structure has a plurality of through holes in the axial direction, wherein the mean square of the roughness curve of the inner peripheral surface of the aforementioned through holes is formed The root slope (RΔq) is smaller than the root mean square slope (RΔq) of the roughness curve of the outer peripheral surface of the aforementioned honeycomb structure. 如請求項1所述之透氣性插銷,其中,包含前述蜂巢結構物的外周面之外周側區域的開氣孔率係小於排除該外周側區域之內周側區域的開氣孔率。 The air-permeable plug according to claim 1, wherein the open porosity of the outer peripheral region including the outer peripheral surface of the honeycomb structure is smaller than the open porosity of the inner peripheral region excluding the outer peripheral region. 如請求項1所述之透氣性插銷,其中,包含前述蜂巢結構物的外周面之外周側區域的開氣孔率係大於排除該外周側區域之內周側區域的開氣孔率。 The air-permeable plug according to claim 1, wherein the open porosity of the outer peripheral region including the outer peripheral surface of the honeycomb structure is greater than the open porosity of the inner peripheral region excluding the outer peripheral region. 如請求項1或2所述之透氣性插銷,其中,以形成前述貫通孔之內周面與從前述蜂巢結構物的外周面朝向前述貫通孔的軸心進行研磨所得到之觀察對象面之稜線為起點,深度為10μm以上20μm以下之凹部的個數係每稜線長度1mm2個以下。 The air-permeable plug according to claim 1 or 2, wherein the inner peripheral surface forming the through-hole and the ridge line of the observation object surface obtained by grinding from the outer peripheral surface of the honeycomb structure toward the axis of the through-hole As a starting point, the number of recesses with a depth of 10 μm to 20 μm is 2 or less per ridge length of 1 mm. 如請求項4所述之透氣性插銷,其中,於前述觀察對象面之前述稜線的真直度為20μm以下。 The air-permeable plug according to claim 4, wherein the straightness of the ridgeline on the observation object surface is 20 μm or less. 如請求項1或2所述之透氣性插銷,其中,前述緻密質陶瓷係以氧化鋁為主成分,且含有鈉,而含鈉量為20質量ppm以下。 The air-permeable plug according to claim 1 or 2, wherein the dense ceramics are mainly composed of alumina and contain sodium, and the sodium content is 20 mass ppm or less. 如請求項6所述之透氣性插銷,其中,前述緻密質陶瓷係以氧化鋁為主成分且含有鋁酸鎂;就從相鄰之鋁酸鎂的結晶粒子之重心間距離的平均值減去鋁酸鎂的結晶粒子之等效圓直徑的平均值後之值而言,包含前述 蜂巢結構物的外周面之外周側區域係較包含形成前述貫通孔之內周面之內周側區域更大。 The gas-permeable plug according to Claim 6, wherein the dense ceramics are mainly composed of alumina and contain magnesium aluminate; subtract the average distance between the centers of gravity of adjacent magnesium aluminate crystal particles In terms of the value after the average value of the equivalent circle diameter of the crystal particles of magnesium aluminate, including the aforementioned The outer peripheral area of the outer peripheral surface of the honeycomb structure is larger than the inner peripheral area of the inner peripheral surface including the aforementioned through holes. 如請求項1或2所述之透氣性插銷,其中,前述緻密質陶瓷係以碳化矽為主成分,且含有金屬矽。 The air-permeable plug according to claim 1 or 2, wherein the aforementioned dense ceramic is mainly composed of silicon carbide and contains metallic silicon. 如請求項8所述之透氣性插銷,其中,金屬矽之重心間距離的平均值與金屬矽之等效圓直徑的平均值之差為8μm以上20μm以下。 The air-permeable plug according to claim 8, wherein the difference between the average value of the distance between the centers of gravity of the metal silicon and the average value of the equivalent circle diameter of the metal silicon is not less than 8 μm and not more than 20 μm. 如請求項1或2所述之透氣性插銷,其中,前述蜂巢結構物係至少於外周面具備由具有導電性之層或膜所構成之第1導電部。 The air-permeable plug according to claim 1 or 2, wherein the honeycomb structure has a first conductive portion made of a conductive layer or film at least on the outer peripheral surface. 如請求項1或2所述之透氣性插銷,其中,前述蜂巢結構物的至少任一端面係具備由具有導電性之層或膜所構成之第2導電部。 The air-permeable plug according to claim 1 or 2, wherein at least any end surface of the honeycomb structure is equipped with a second conductive portion made of a conductive layer or film. 如請求項10所述之透氣性插銷,其中,前述蜂巢結構物的內周面係具備由具有導電性之層或膜所構成之第3導電部。 The air-permeable plug according to Claim 10, wherein the inner peripheral surface of the honeycomb structure is provided with a third conductive portion made of a conductive layer or film. 如請求項6所述之透氣性插銷,其中,浸漬在濃度35質量%的鹽酸,並從浸漬開始經過72小時後之以下列式(2)所表示之每單位面積的質量變化C為0.3g/cm2以下;C=(W0-W1)/A‧‧‧(2)W0:浸漬前之試驗片的質量(g),W1:從浸漬開始經過72小時後之試驗片的質量(g),A;試驗片於浸漬前的表面積(cm2)。 The air-permeable plug according to Claim 6, wherein the mass change C per unit area represented by the following formula (2) after 72 hours of immersion in hydrochloric acid with a concentration of 35% by mass is 0.3 g C = ( W 0 -W 1 ) /A Mass (g), A; surface area (cm 2 ) of the test piece before immersion. 一種透氣性插銷,係具備緻密質陶瓷的蜂巢結構物,該緻密質陶瓷的蜂巢結構物係於軸向上具有複數個貫通孔,其中,前述緻密質陶瓷係以碳化矽為主成分,且含有金屬矽。 A gas-permeable plug is provided with a dense ceramic honeycomb structure, and the dense ceramic honeycomb structure has a plurality of through holes in the axial direction, wherein the aforementioned dense ceramic is mainly composed of silicon carbide and contains metal Silicon. 一種透氣性插銷,係具備緻密質陶瓷的蜂巢結構物,該緻密質陶瓷的蜂巢結構物係於軸向上具有複數個貫通孔,其中,前述蜂巢結構物係至少於外周面具備由具有導電性之層或膜所構成之第1導電部。 A gas-permeable plug is provided with a dense ceramic honeycomb structure, and the dense ceramic honeycomb structure has a plurality of through holes in the axial direction. The first conductive part composed of layers or films. 一種透氣性插銷,係具備緻密質陶瓷的蜂巢結構物,該緻密質陶瓷的蜂巢結構物係於軸向上具有複數個貫通孔,其中,前述蜂巢結構物的至少任一端面係具備由具有導電性之層或膜所構成之第2導電部。 A gas-permeable plug is provided with a dense ceramic honeycomb structure, and the dense ceramic honeycomb structure has a plurality of through holes in the axial direction, wherein at least any end surface of the aforementioned honeycomb structure is equipped with a The second conductive part composed of layers or films. 一種基板支撐組件,係具備靜電吸附構件以及請求項1至16中任一項所述之透氣性插銷而成者;其中,上述靜電吸附構件係具有:基材,係由具有吸附有被處理構件之吸附面以及位於該吸附面的相反側之對向面之板狀的陶瓷所構成;內部電極,係位於該基材內;以及流路,係位於沿著前述基材的厚度方向;上述透氣性插銷係裝著於前述流路的內部。 A substrate support assembly comprising an electrostatic adsorption member and the gas-permeable plug described in any one of Claims 1 to 16; wherein, the electrostatic adsorption member includes: a base material having a member adsorbed thereon The adsorption surface and the plate-shaped ceramics on the opposite side of the adsorption surface; the internal electrode is located in the substrate; and the flow path is located along the thickness direction of the substrate; the above-mentioned air-permeable The sex pin is installed in the inside of the aforementioned flow path. 如請求項17所述之基板支撐組件,其中,前述基材及前述透氣性插銷係由以氧化鋁為主成分之陶瓷所構成,氧化鋁的純度係前述透氣性插銷之高於前述基材。 The substrate support assembly according to claim 17, wherein the base material and the gas-permeable plug are made of ceramics mainly composed of alumina, and the purity of the alumina is higher than that of the gas-permeable plug. 一種基板支撐組件,係具備靜電吸附構件以及透氣性插銷而成者;其中,上述靜電吸附構件係具有:基材,係由具有吸附有被處理構件之吸附面以及位於該吸附面的相反側之對向面之板狀的陶瓷所構成;內部電極,係位於該基材內;以及流路,係位於沿著前述基材的厚度方向;上述透氣性插銷係裝著於前述流路的內部,且具備緻密質陶瓷的蜂巢結構物,該緻密質陶瓷的蜂巢結構物係於軸向上具有複數個貫通孔;且前述基材及前述透氣性插銷係由以氧化鋁為主成分之陶瓷所構成,氧化鋁的純度係前述透氣性插銷之高於前述基材。 A substrate support assembly is provided with an electrostatic adsorption member and a gas-permeable plug; wherein the electrostatic adsorption member has: a base material, which has an adsorption surface on which the member to be processed is adsorbed and a surface located on the opposite side of the adsorption surface. The opposite surface is made of plate-shaped ceramics; the internal electrode is located in the base material; and the flow path is located along the thickness direction of the aforementioned base material; the gas-permeable plug is installed inside the aforementioned flow path, And it has a dense ceramic honeycomb structure, the dense ceramic honeycomb structure has a plurality of through holes in the axial direction; and the aforementioned base material and the aforementioned air-permeable plug are made of ceramics mainly composed of alumina, The purity of alumina is higher than that of the aforementioned base material because of the aforementioned air-permeable plug. 一種噴淋板,係具備:第2基材,其係由板狀的陶瓷所構成,該板狀的陶瓷在厚度方向上具有通過電漿生成用氣體之複數個第2流路;以及請求項1至16中任一項所述之透氣性插銷,其係裝著於前述第2流路的內部。 A shower plate comprising: a second base material composed of a plate-shaped ceramic having a plurality of second flow paths through which a gas for plasma generation passes in a thickness direction; and claims The air-permeable plug according to any one of 1 to 16 is mounted inside the second flow path.
TW110119497A 2020-05-28 2021-05-28 Breathable plug, substrate support assembly and shower plate TWI789770B (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2020-093452 2020-05-28
JP2020093452 2020-05-28
JP2020-143680 2020-08-27
JP2020143680 2020-08-27

Publications (2)

Publication Number Publication Date
TW202202472A TW202202472A (en) 2022-01-16
TWI789770B true TWI789770B (en) 2023-01-11

Family

ID=78744621

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110119497A TWI789770B (en) 2020-05-28 2021-05-28 Breathable plug, substrate support assembly and shower plate

Country Status (3)

Country Link
JP (1) JPWO2021241645A1 (en)
TW (1) TWI789770B (en)
WO (1) WO2021241645A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7483121B2 (en) * 2022-02-09 2024-05-14 日本碍子株式会社 Semiconductor manufacturing equipment parts
WO2023190449A1 (en) * 2022-03-30 2023-10-05 京セラ株式会社 Vented plug and mounting base

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06157132A (en) * 1992-11-13 1994-06-03 Toshiba Ceramics Co Ltd High purity alumina ceramics and production thereof
US5996528A (en) * 1996-07-02 1999-12-07 Novellus Systems, Inc. Method and apparatus for flowing gases into a manifold at high potential
TWI518841B (en) * 2013-03-29 2016-01-21 Toto Ltd Electrostatic sucker
US9976211B2 (en) * 2014-04-25 2018-05-22 Applied Materials, Inc. Plasma erosion resistant thin film coating for high temperature application
TW201840890A (en) * 2017-03-17 2018-11-16 美商應用材料股份有限公司 Plasma resistant coating of porous body by atomic layer deposition
JP2020072261A (en) * 2018-10-30 2020-05-07 Toto株式会社 Electrostatic chuck
WO2020090613A1 (en) * 2018-10-30 2020-05-07 京セラ株式会社 Porous ceramic, member for semiconductor manufacturing apparatus, shower plate, and plug

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5604622B2 (en) * 2006-06-13 2014-10-08 北陸成型工業株式会社 Shower plate manufacturing method
JP6295111B2 (en) * 2014-03-14 2018-03-14 日本碍子株式会社 Plugged honeycomb structure
US11715652B2 (en) * 2018-09-28 2023-08-01 Ngk Insulators, Ltd. Member for semiconductor manufacturing apparatus

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06157132A (en) * 1992-11-13 1994-06-03 Toshiba Ceramics Co Ltd High purity alumina ceramics and production thereof
US5996528A (en) * 1996-07-02 1999-12-07 Novellus Systems, Inc. Method and apparatus for flowing gases into a manifold at high potential
TWI518841B (en) * 2013-03-29 2016-01-21 Toto Ltd Electrostatic sucker
US9976211B2 (en) * 2014-04-25 2018-05-22 Applied Materials, Inc. Plasma erosion resistant thin film coating for high temperature application
TW201840890A (en) * 2017-03-17 2018-11-16 美商應用材料股份有限公司 Plasma resistant coating of porous body by atomic layer deposition
JP2020072261A (en) * 2018-10-30 2020-05-07 Toto株式会社 Electrostatic chuck
WO2020090613A1 (en) * 2018-10-30 2020-05-07 京セラ株式会社 Porous ceramic, member for semiconductor manufacturing apparatus, shower plate, and plug

Also Published As

Publication number Publication date
TW202202472A (en) 2022-01-16
WO2021241645A1 (en) 2021-12-02
JPWO2021241645A1 (en) 2021-12-02

Similar Documents

Publication Publication Date Title
TWI789770B (en) Breathable plug, substrate support assembly and shower plate
KR20190042523A (en) Wafer supporting device and manufacturing method thereof and semiconductor-processing apparatus
TWI413438B (en) Supporting unit for semiconductor manufacturing device and semiconductor manufacturing device with supporting unit installed
JP3338593B2 (en) Semiconductor processing apparatus and method of manufacturing the same
KR101457215B1 (en) Yttrium oxide-containing material, component of semiconductor manufacturing equipment, amd method of producing yttrium oxide-containing material
TW202009990A (en) Ring-shaped element for etching apparatus, etching apparatus, and method for etching substrate with the same
KR20070066890A (en) Electrostatic chuck
TWI751444B (en) Electrostatic chuck
JP2012060106A (en) Electrostatic chuck and method of manufacturing electrostatic chuck
US20200404747A1 (en) Holding device and method of manufacturing holding device
US11990362B2 (en) Composite sintered body, electrostatic chuck member, electrostatic chuck device, and method for manufacturing composite sintered body
KR102409290B1 (en) Electrode plate for plasma processing apparatus and method of regenerating electrode plate for plasma processing apparatus
TWI785577B (en) Air-permeable member, member for semiconductor manufacturing apparatus, plug and sucking member
JP2020173089A (en) Ceramic tray, and heat treatment method and heat treatment device using the same
KR100989230B1 (en) Electrostatic chuck
JP6665967B2 (en) shower head
US20240010510A1 (en) Sintered yttrium oxide body of large dimension
JP2009302518A (en) Electrostatic chuck
KR20090101245A (en) Ceramic member and corrosion-resistant member
JP7431642B2 (en) Ceramic tray, heat treatment method using the same, and heat treatment equipment
JP2020173088A (en) Ceramic tray, and heat treatment method and heat treatment device using the same
JP2020173087A (en) Tray, and heat treatment method and heat treatment device using the same
JP4127174B2 (en) Wafer holder and semiconductor manufacturing apparatus
JP2008288428A (en) Electrostatic chuck
US20220185740A1 (en) Corrosion-resistant ceramic