TW202201259A - Information processing device, information processing method, and computer-readable storage medium - Google Patents

Abstract

The disclosure describes an information processing method, an information processing device, and a computer-readable storage medium capable of forming structures such as films on substrates with high precision. One example of the information processing device comprises an estimation section which calculates an estimated film thickness when a substrate is processed by a substrate processing device based on a film thickness model that represents the relationship between the state of the substrate processing device and the film thickness of a coating film formed on the surface of the substrate by the substrate processing device, and advance data indicating the state of the substrate processing device prior to processing of the substrate by the substrate processing device, and an output section which, prior to the substrate being processed by the substrate processing device, outputs instruction information related to substrate processing based on the estimated film thickness.

Description

Information processing device, information processing method, and computer-readable recording medium

The present invention relates to an information processing device, an information processing method and a computer-readable recording medium.

Patent Document 1 discloses an apparatus for calculating the film thickness of a film formed on a substrate based on a photographed image of the substrate surface. [Prior Art Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Application Laid-Open No. 2015-215193

[Problems to be Solved by Invention]

The present invention describes an information processing apparatus, an information processing method, and a computer-readable recording medium capable of forming structures such as films on a substrate with high precision. [Technical means to solve the problem]

An example of an information processing apparatus includes a prediction unit based on a film thickness model representing the relationship between "the state of the substrate processing apparatus" and "the thickness of the coating film formed on the surface of the substrate by the substrate processing apparatus", and a film thickness model representing " Calculate the predicted film thickness when the substrate is processed by the substrate processing apparatus, and the output section, before processing the substrate by the substrate processing apparatus. , based on the predicted film thickness, instruction information related to the processing of the substrate is output. [Inventive effect]

According to the information processing apparatus, the information processing method, and the computer-readable recording medium of the present invention, structures such as films can be formed on a substrate with high precision.

In the following description, the same symbols are used for the same elements or elements having the same functions, and overlapping descriptions are omitted.

[Substrate processing system] First, the configuration of the substrate processing system 1 will be described with reference to FIGS. 1 to 3 . The substrate processing system 1 includes a coating and developing device 2 (substrate processing device), an exposure device 3 and a controller Ctr (information processing device).

The exposure device 3 transmits and receives the substrate W between the coating and developing device 2, and performs “exposure treatment (pattern exposure) of the photoresist film R (coating film) formed on the surface Wa of the substrate W (see FIG. 4, etc.) ". The exposure device 3 can selectively irradiate the exposure target portion of the photoresist film R with energy rays by a method such as liquid immersion exposure, for example.

The energy line may be, for example, ionizing radiation, non-ionizing radiation, or the like. Ionizing radiation is radiation with sufficient energy to ionize atoms or molecules. The ionizing radiation may be, for example, extreme ultraviolet (EUV: Extreme Ultraviolet), electron beam, ion beam, X-ray, alpha ray, beta ray, gamma ray, heavy particle ray, positive ray, and the like. Non-ionizing radiation is radiation that does not have sufficient energy to ionize atoms or molecules. The non-ionizing radiation can be, for example, g-rays, i-rays, KrF excimer lasers, ArF excimer lasers, F ₂ excimer lasers, and the like.

The coating and developing device 2 forms a photoresist film R on the surface Wa of the substrate W before the exposure process by the exposure device 3 . The coating and developing device 2 performs the developing process of the photoresist film R after the exposure process.

The substrate W may be in the shape of a circular plate, or may be in a plate shape other than a circle such as a polygon. The substrate W may have a notch portion from which a part is cut out. The cutout portion may be, for example, a notch (a groove such as a U-shape or a V-shape), or a straight line portion (so-called orientation plane) extending in a straight line. The substrate W may be, for example, various substrates such as a semiconductor substrate (silicon wafer), a glass substrate, a mask substrate, and an FPD (Flat Panel Display) substrate. The diameter of the substrate W may be, for example, about 200 mm to 450 mm.

As shown in FIGS. 1 to 3 , the coating and developing device 2 includes a carrier block 4 , a processing block 5 and an interface block 6 . The carrier block 4, the processing block 5 and the interface block 6 are juxtaposed in the horizontal direction.

The carrier block 4 includes a carrier station 12 and a carry-in and carry-out unit 13 . The carrier station 12 supports a plurality of carriers 11 (containers). The carrier 11 accommodates at least one substrate W in a sealed state. On the side surface 11 a of the carrier 11 , an opening and closing door (not shown) for allowing the substrate W to enter and exit is provided. The carrier 11 is detachably installed on the carrier station 12 so that the side surface 11a faces the side of the carry-in/out part 13 .

The carry-in and carry-out unit 13 is located between the carrier station 12 and the processing block 5 . As shown in FIGS. 1 and 3 , the carry-in and carry-out unit 13 has a plurality of opening and closing doors 13a. When the carrier 11 is placed on the carrier station 12, the opening and closing door of the carrier 11 is in a state of facing the opening and closing door 13a. By simultaneously opening the opening and closing door 13a and the opening and closing door of the side surface 11a, the inside of the carrier 11 and the inside of the carry-in/out part 13 are communicated. As shown in FIGS. 2 and 3 , the carrying-in and carrying-out portion 13 has a carrying arm A1 built therein. The transfer arm A1 takes out the substrate W from the carrier 11 and transfers it to the processing block 5 , and receives the substrate W from the processing block 5 and returns to the carrier 11 .

As shown in FIG. 2 , the processing block 5 includes processing modules PM1 to PM4 , a film thickness measurement unit U3 (processing chamber), and a line width measurement unit U4 (processing chamber).

The processing module PM1 forms an underlayer film on the surface of the substrate W, and is also called a BCT module. As shown in FIG. 3 , the processing module PM1 includes a liquid processing unit U1 (processing chamber), a thermal processing unit U2 (processing chamber), and a transport arm A2 that transports the substrate W to these units. The liquid processing unit U1 of the processing module PM1 applies a coating liquid for forming an underlayer film to the substrate W, for example. The heat processing unit U2 of the processing module PM1 performs, for example, a heat processing for curing the coating film formed on the substrate W by the liquid processing unit U1 to become an underlayer film. For example, an antireflection (SiARC) film can be mentioned as the underlayer film.

The processing module PM2 forms an intermediate film (hard mask) on the lower film, also known as the HMCT module. The processing module PM2 includes a liquid processing unit U1, a thermal processing unit U2, and a transport arm A3 that transports the substrate W to these units. The liquid processing unit U1 of the processing module PM2 applies, for example, a coating liquid for intermediate film formation to the substrate W. The heat processing unit U2 of the processing module PM2 performs, for example, a heat processing for curing the coating film formed on the substrate W by the liquid processing unit U1 to become an intermediate film. For example, an SOC (Spin On Carbon) film and an amorphous carbon film can be cited as the intermediate film.

The processing module PM3 forms a thermosetting and photosensitive photoresist film R on the intermediate film, which is also called a COT module. The processing module PM3 includes a liquid processing unit U1, a thermal processing unit U2, and a transport arm A4 that transports the substrate W to these units. The liquid processing unit U1 of the processing module PM3 applies a coating liquid for forming a photoresist film to the substrate W, for example. The heat treatment unit U2 of the processing module PM3 performs, for example, a heat treatment (PAB: Pre Applied Bake: Pre Applied Bake) for hardening the coating film formed on the substrate W by the liquid processing unit U1 to become the photoresist film R .

The processing module PM4 is used for developing the photoresist film after exposure, and is also called a DEV module. The processing module PM4 includes a liquid processing unit U1, a thermal processing unit U2, and a transport arm A5 that transports the substrate W to these units. The liquid processing unit U1 of the processing module PM4, for example, partially removes the photoresist film R to form a photoresist pattern (not shown). The heat treatment unit U2 of the processing module PM4 performs, for example, a heat treatment (PEB: Post Exposure Bake: post-exposure bake) before the development treatment, and a heat treatment (PB: Post Bake: post-bake) after the development treatment.

The film thickness measurement unit U3 measures the film thickness of the photoresist film R formed on the surface Wa of the substrate W by the processing module PM3. The line width measuring unit U4 measures the line width of the photoresist pattern formed on the surface Wa of the substrate W by the processing module PM4. The film thickness measurement unit U3 and the line width measurement unit U4 can be integrated. That is, the film thickness and the line width can be measured by one unit. The film thickness measurement unit U3 can measure the film thickness based on, for example, a photographed image captured by a camera, or can measure the film thickness by irradiating with laser light or the like. The line width measurement unit U4 can similarly measure the line width based on a photographed image captured by a camera, for example, or can measure the line width by irradiating with laser light or the like.

As shown in FIGS. 2 and 3 , the processing block 5 includes a shed unit 14 located near the carrier block 4 . The shed unit 14 extends in the up-down direction and includes a plurality of unit cells arranged in the up-down direction. A transfer arm A6 is provided near the shed unit 14 . The conveyance arm A6 lifts and lowers the substrate W between the units of the shelf unit 14 .

The processing block 5 includes the booth unit 15 located near the interface block 6 . The shed unit 15 extends in the up-down direction and includes a plurality of unit cells arranged in the up-down direction.

A carrying arm A7 is built in the interface block 6 and is connected with the exposure device 3 . The conveyance arm A7 takes out the substrate W of the booth unit 15 and transfers it to the exposure device 3 , receives the substrate W from the exposure device 3 and returns it to the booth unit 15 .

As shown in FIGS. 1 to 3 , a sensor unit SE (sensor) may be arranged inside or outside the coating and developing device 2 . As shown in FIG. 1 or FIG. 2 , the sensor unit SE outside the coating and developing device 2 can be mounted on the outer wall surface of the coating and developing device 2 .

As shown in FIG. 2 or FIG. 3 , the sensor unit SE inside the coating and developing device 2 can be arranged in the coating and developing device 2 where the substrate W exists. For example, the sensor unit SE may be arranged in the carrier 11, may also be arranged in the liquid processing unit U1 of the processing modules PM1-PM4, may also be arranged in the thermal processing unit U2 of the processing modules PM1-PM4, or It may be arranged in the unit cells of the rack units 14 and 15, or may be arranged on the conveyance path of the substrate W (that is, outside each of the units U1 to U4, etc.) through which the conveyance arms A1 to A7 and the like travel.

The sensor unit SE may, for example, comprise at least one sensor selected from the group consisting of: temperature sensor, humidity sensor, air pressure sensor, wind speed sensor, differential pressure Sensors, thermal imaging cameras, and viscosity sensors. A temperature sensor measures the temperature of its surrounding environment. A humidity sensor measures the relative humidity of its surrounding environment. Barometric pressure sensors measure the barometric pressure of their surroundings. The wind speed sensor measures the wind speed of its surroundings. The pressure difference sensor can measure the pressure difference inside and outside the coating and developing device 2 (for example, the pressure difference between the inside of each unit U1 to U4 and the outside of the coating and developing device 2 ). The thermal imaging camera can measure, for example, the temperature distribution of the substrate W or the cooling plate 81 (described later) in the thermal processing unit U2. The viscosity sensor can measure the viscosity of the photoresist liquid used in the processing module PM3.

The coating and developing device 2 further includes a display 16 (display device). The display 16 displays various information on the screen. The information displayed on the display 16 may include, for example, processing conditions of the substrate W (eg, a preset processing program, conditions calculated by the controller Ctr, etc.), the captured image of the substrate W, and the processing conditions of the substrate W by the sensor unit SE. The acquired data (pre-event data, post-event data), the data of the film thickness measured by the film thickness measurement unit U3 (the actual measured value of the film thickness), and the data of the line width measured by the line width measurement unit U4 ( Line width measured value), analysis results of various data obtained by the controller Ctr (for example, the later-described predicted film thickness, predicted line width, film thickness model, line width model, etc.).

The controller Ctr controls the coating and developing device 2 in part or as a whole. Details of the controller Ctr will be described later. The controller Ctr can send and receive signals to and from the controller of the exposure apparatus 3 , and controls the substrate processing system 1 as a whole by being linked with the controller of the exposure apparatus 3 .

[Liquid Handling Unit] Next, the liquid processing unit U1 will be described in further detail with reference to FIG. 4 . The liquid processing unit U1 includes a substrate holding portion 20 , a liquid supply portion 30 , a liquid supply portion 40 , a cover member 50 , and a blower B.

The substrate holding part 20 includes a rotating part 21 , a shaft 22 and a holding part 23 . The rotating part 21 operates based on an operation signal from the controller Ctr, and rotates the shaft 22 . The rotating part 21 is, for example, a power source such as an electric motor. The holding portion 23 is provided at the front end portion of the shaft 22 . The substrate W is arranged on the holding portion 23 . The holding portion 23 holds the substrate W slightly horizontally, for example, by suction or the like. That is, the substrate holding portion 20 rotates the substrate W around the central axis (rotation axis) perpendicular to the surface Wa of the substrate W while the posture of the substrate W is approximately horizontal. Inside the liquid processing unit U1 , the sensor unit SE may be disposed above the substrate holding portion 20 .

The liquid supply unit 30 supplies the processing liquid L1 to the surface Wa of the substrate W. The processing liquid L1 of the processing module PM1 may be, for example, a coating liquid for forming an underlayer film. The treatment liquid L1 of the treatment module PM2 may be, for example, a coating liquid for forming an intermediate film. The processing liquid L1 of the processing module PM3 may be, for example, a photoresist liquid for forming the photoresist film R. The processing liquid L1 of the processing module PM4 can be, for example, a developing liquid. The photoresist material contained in the photoresist liquid can be either a positive type photoresist material or a negative type photoresist material. The positive photoresist is a photoresist that dissolves in the exposed part of the pattern and remains in the unexposed part (light-shielding part) of the pattern. The negative photoresist material is the photoresist material in which the unexposed part (light-shielding part) of the pattern is dissolved and the exposed part of the pattern remains.

The liquid supply unit 30 includes a supply mechanism 31 and a nozzle 32 . The supply mechanism 31 sends out the processing liquid L1 stored in a container (not shown) by a liquid feeding mechanism (not shown) such as a pump based on a signal from the controller Ctr. The supply mechanism 31 moves the nozzle 32 in the height direction and the horizontal direction based on the signal from the controller Ctr. The nozzle 32 discharges the processing liquid L1 supplied from the supply mechanism 31 to the surface Wa of the substrate W.

The liquid supply unit 40 supplies the processing liquid L2 to the surface Wa of the substrate W. As shown in FIG. The processing liquid L2 of the processing module PM1 may be, for example, a chemical liquid (eg, an organic solvent) for removing the peripheral portion of the lower layer film. The processing liquid L2 of the processing module PM2 may be, for example, a chemical liquid (eg, an organic solvent) for removing the peripheral portion of the intermediate film. The processing liquid L2 of the processing module PM3 may be, for example, a chemical liquid (such as an organic solvent) for removing the peripheral portion of the photoresist film R, or may be used to improve the fluidity of the photoresist liquid on the surface Wa of the substrate W. For this purpose, before the photoresist liquid is applied, a chemical liquid (eg, an organic solvent) is supplied to the surface Wa of the substrate W first. The treatment liquid L2 of the treatment module PM4 can be, for example, a rinse liquid.

The liquid supply unit 40 includes a supply mechanism 41 and a nozzle 42 . The supply mechanism 41 sends out the processing liquid L2 stored in a container (not shown) by a liquid feeding mechanism (not shown) such as a pump based on a signal from the controller Ctr. The supply mechanism 41 moves the nozzle 42 in the height direction and the horizontal direction based on the signal from the controller Ctr. The nozzle 42 discharges the processing liquid L2 supplied from the supply mechanism 41 to the surface Wa of the substrate W. As shown in FIG.

The cover member 50 is provided around the substrate holding portion 20 . The cover member 50 includes a main body 51 , a liquid discharge port 52 and an exhaust port 53 . The main body 51 serves as a liquid collection container that receives "the processing liquids L1 and L2 supplied to the substrate W for processing the substrate W". The liquid discharge port 52 is disposed at the bottom of the main body 51, and discharges the waste liquid collected by the main body 51 to the outside of the liquid processing unit U1. The exhaust port 53 is provided at the bottom of the main body 51 , and discharges the downflow flowing around the substrate W to the outside of the liquid processing unit U1 .

The blower B is attached to the liquid processing unit U1 and is arranged above the substrate holding portion 20 and the cover member 50 . The blower B forms a downflow toward the cover member 50 based on the signal from the controller Ctr.

[Constitution of heat treatment unit] Next, the configuration of the heat treatment unit U2 will be described with reference to FIG. 5 . The heat treatment unit U2 includes a heating unit 70 for heating the substrate W and a cooling unit 80 for cooling the substrate W in the casing 60 . The casing 60 is provided with the loading/unloading port 61 of the substrate W in the vicinity of the cooling unit 80 . In the casing 60 , the sensor unit SE can be arranged in the vicinity of the carry-in/out port 61 . In the sensor unit SE, the differential pressure sensor may be arranged on the opposite side of the case 60 to the carry-in/out port 61 .

The heating unit 70 includes a hot plate 71 and a lift mechanism 72 . The hot plate 71 heats the substrate W placed on the top surface based on an instruction from the controller Ctr. The elevating mechanism 72 includes three elevating pins 72a that can elevate based on an instruction from the controller Ctr. Each of the lift pins 72 a penetrates through the through holes 71 a provided in the heat plate 71 , respectively.

The cooling unit 80 includes a cooling plate 81 and a lifting mechanism 82 . The cooling plate 81 cools the substrate W placed on the top surface based on an instruction from the controller Ctr. The cooling plate 81 can be moved between a position near the carry-in/out port 61 and a position near the hot plate 71 based on an instruction from the controller Ctr. The lift mechanism 82 includes three lift pins 82a that can be raised and lowered based on an instruction from the controller Ctr. Each lift pin 82a penetrates through the slit 81a provided in the cooling plate 81, respectively.

When the board|substrate W is carried into the heat processing unit U2, the lift pins 82a are raised by the lift mechanism 82, and the front-end|tip of the lift pins 82a is made to protrude above the cooling plate 81. FIG. Next, after the substrate W carried into the housing 60 is placed on the front end of the lift pins 82a, the lift pins 82a are lowered by the lift mechanism 82 to be lower than the cooling plate 81, whereby the substrate W is lifted from the lift pins 82a. Transferred to the cooling plate 81 .

Next, the cooling plate 81 is moved to the top of the heating plate 71 . In this state, the elevating pin 72 a is raised by the elevating mechanism 72 , so that the front end of the elevating pin 72 a protrudes above the cooling plate 81 . Thereby, the substrate W is transferred from the cooling plate 81 to the lift pins 72a. Next, the cooling plate 81 is moved to the vicinity of the carry-in/out port 61 . In this state, the lift pins 72 a are lowered below the heat platen 71 by the lift mechanism 72 , whereby the substrate W is transferred from the lift pins 72 a to the heat plate 71 . When the substrate W is unloaded from the heat treatment unit U2, the reverse operation to the above is performed.

[Details of the controller] Next, the details of the controller Ctr will be described with reference to FIGS. 6 to 8 . As shown in FIG. 6 , the controller Ctr includes a storage unit M1 , a film thickness relation processing unit M2 and a line width relation processing unit M3 as functional modules. These functional modules are only for the convenience of description, and the functions of the controller Ctr are divided into plural modules, which does not mean that the hardware constituting the controller Ctr must be divided into such modules. Each functional module is not limited to be realized by the execution of the program, but can also be realized by a dedicated electronic circuit (such as a logic circuit), or an integrated circuit (ASIC: Application Specific Integrated Circuit: special application integrated circuits).

The storage part M1 stores various data. The storage unit M1 can store, for example, a program read from the computer-readable recording medium RM, setting data input by an operator via an external input device (not shown), and the like. This program can operate each part of the coating and developing device 2 . The recording medium RM may be, for example, a semiconductor memory, an optical recording disc, a magnetic recording disc, or a magneto-optical recording disc.

The storage part M1 may include the following parts as functional modules: a pre-event data storage part M11, a post-event data storage part M12, a film thickness measurement value storage part M13, a line width measurement value storage part M14, a film thickness model storage part M15, and a line width storage part M15. Model storage part M16.

The prior data storage unit M11 can store the data measured by the sensor unit SE at a time point before the substrate W is processed as prior data. The prior data storage unit M11 can store, for example, data measured by the sensor unit SE at "the time point when the carrier 11 containing the substrate W is placed on the carrier station 12 of the coating and developing device 2" as the prior data. store.

The post-event data storage part M12 can store the data measured by the sensor unit SE at a time point after the substrate W is processed as post-event data. The post-event data storage unit M12 can store, for example, data measured by the sensor unit SE at "the time point after the substrate W is subjected to liquid processing by the liquid processing unit U1" as post-liquid processing data. The term "after the liquid treatment" includes, for example, after the photoresist film R is formed on the surface Wa of the substrate W, and after the photoresist film R is developed to form a photoresist pattern on the surface Wa of the substrate W, and the like. The post data storage unit M12 may store, for example, data measured by the sensor unit SE at "the time point after the heat treatment of the substrate W by the heat treatment unit U2" as post heat treatment data.

The film thickness measurement value storage part M13 can store the film thickness of the photoresist film R measured by the film thickness measurement unit U3. The line width measured value storage part M14 can store the line width of the photoresist pattern measured by the line width measurement unit U4.

The film thickness model storage unit M15 can represent "the state of the coating and developing device 2" and "the predicted value (predicted film thickness) of the film thickness of the photoresist film R formed on the surface Wa of the substrate W by the coating and developing device 2" The film thickness model of the relationship is stored. The film thickness model, for example, can be obtained by processing the substrate W under different processing conditions and obtaining the film thickness of a plurality of photoresist films R, and the model obtained in the actual operation mode can also be a theoretical model by simulation on a computer. The model obtained by the method can also be a model after combining these models. In addition, the film thickness model may be based on a record in which "the state of the coating and developing device 2" and "the film thickness of the photoresist film R formed on the surface Wa of the substrate W by the coating and developing device 2" are stored. learning data, and models generated by machine learning. An example of the film thickness model includes a multiple regression equation generated by multiple regression analysis. The multiple regression equation of the film thickness can be defined by Equation 1 when the parameters y, a1 to ak, α1 to αk, e, and k are set to the following conditions y: target variable (predicted film thickness) a1 to ak: explanatory variables (processing conditions of substrate W) α1～αk: Partial regression coefficient e: error k: a natural number greater than 2 y＝α1・a1＋α2・a2＋・・・＋αk・ak＋e・・・(1)

The line width model storage unit M16 can represent the difference between "the state of the coating and developing device 2" and "the predicted value (predicted line width) of the line width of the photoresist pattern formed on the surface Wa of the substrate W by the coating and developing device 2". The linewidth model of the relationship is memorized. The line width model, for example, can be obtained by processing the substrate W under different processing conditions and obtaining the line width of a plurality of photoresist patterns, and the model obtained in the actual operation mode can also be a theoretical model by simulation on a computer. The model obtained by the method can also be a model after combining these models. In addition, the line width model may be based on a record stored in which "the state of the coating and developing device 2" corresponds to "the line width of the photoresist pattern formed on the surface Wa of the substrate W by the coating and developing device 2" Learning data, and models generated by machine learning. An example of a linewidth model includes multiple regressions generated by multiple regression analysis. The multiple regression equation of the line width can be defined by Equation 2 when the parameters z, b1 to bm, β1 to βm, f, and m are set to the following conditions. z: target variable (predicted line width) b1 to bm: explanatory variables (processing conditions of substrate W) β1～βm: Partial regression coefficient f: error m: a natural number greater than 2 z＝β1・b1＋β2・b2＋・・・＋βk・bk＋f・・・(2)

The partial regression coefficients α1 to αk may include one or more values selected from the group consisting of: a value based on the temperature of the surrounding environment when the substrate W is processed, a value based on the temperature of the surrounding environment when the substrate W is processed The value obtained from relative humidity, the value obtained from the air pressure of the surrounding environment when the substrate W is processed, the value obtained from the wind speed of the surrounding environment when the substrate W is processed, and the value obtained from the viscosity of the photoresist liquid applied to the substrate W The value of , the value according to the type of organic solvent supplied to the substrate W, the value according to the temperature distribution of the substrate W, the value according to the "surrounding environment when processing the substrate W" and the air pressure "outside the coating and developing device 2" A value obtained from the difference, and a value obtained from the structure of the cover member 50 . The same is true for the partial regression coefficients β1 to βk.

The film thickness relation processing part M2 performs processing for forming the photoresist film R of a predetermined film thickness on the surface Wa of the substrate W to be processed next, based on various data stored in the storage part M1. As shown in FIGS. 6 and 7 , the film thickness relationship processing unit M2 includes a prediction unit M21 , an output unit M20 , an update unit M23 , and a control unit M25 .

As shown in FIG. 7 , the prediction unit M21 performs calculation based on the “previous data stored in the prior data storage unit M11” and “the film thickness model (formula 1) stored in the film thickness model storage unit M15” The predicted film thickness y of the photoresist film R on the surface Wa of the substrate W to be processed.

The output unit M20 outputs instruction information related to the processing of the substrate W based on the predicted film thickness y before the substrate W is processed by the coating and developing device 2 . For example, the output unit M20 includes a calculation unit M22 and a determination unit M24.

The calculation part M22 calculates the processing conditions of the substrate W suitable for obtaining the predicted film thickness y based on the predicted film thickness y calculated by the prediction part M21. This processing condition is an example of the above-mentioned instruction information. The processing condition may be, for example, the rotational speed of the substrate W performed by the substrate holding portion 20 in the liquid processing unit U1 of the processing module PM3. Since there is a predetermined correlation between "the rotation speed of the substrate W" and "the film thickness of the photoresist film R obtained at the rotation speed", an expression for the correlation can be obtained in advance through experiments. The calculation unit M22 can calculate the rotation speed of the substrate W to be processed next by applying the predicted film thickness y to this formula.

Based on the predicted film thickness y calculated by the predicting unit M21 , the determining unit M24 outputs instruction information (hereinafter, referred to as “continuation availability information”) indicating whether or not to continue the processing of the substrate W. The determination unit M24 can output information on whether or not to continue, for example, based on whether the predicted film thickness y calculated by the prediction unit M21 is within the range of a predetermined design value. For example, as shown in FIG. 6 , the judging unit M24 may display information on whether or not to continue on the display 16 .

The update unit M23 updates the film thickness model stored in the film thickness model storage unit M15 based on "the subsequent data stored in the subsequent data storage unit M12" and "the actual film thickness value stored in the film thickness measured value storage unit M13" . For example, the update unit M23 may add the post-event data and the actual measurement value of the film thickness, and recalculate the partial regression coefficients α1 to αk. The updated film thickness model is stored in the film thickness model storage unit M15. When updating the film thickness model, the update unit M23 may further use the processing conditions calculated by the calculation unit M22.

As shown in FIGS. 6 and 7 , the control unit M25 controls the coating and developing device 2 based on the processing conditions calculated by the calculation unit M22 . For example, the control unit M25 can control the substrate holding unit 20 in the liquid processing unit U1 to rotate the substrate W at the rotational speed of the substrate W calculated by the calculation unit M22 . In addition, the above-mentioned determination unit M24 may output information on whether or not to continue to the control unit M25. When the continuation information output from the determination unit M24 to the control unit M25 indicates that the continuation is not possible, the control unit M25 controls the coating and developing device 2 to stop the processing of the substrate W.

The line width relation processing unit M3 performs processing for forming a photoresist pattern with a predetermined line width on the surface Wa of the substrate W to be processed next, based on various data stored in the storage unit M1. As shown in FIGS. 6 and 7 , the line width relationship processing unit M3 includes a prediction unit M31 , an output unit M30 , an update unit M33 , and a control unit M35 .

As shown in FIG. 7 , the prediction unit M31 is based on “the prior data stored in the prior data storage unit M11” and “the line width model (formula 2) stored in the line width model storage unit M16”, and the calculation is formed in the subsequent The predicted line width z of the photoresist pattern on the surface Wa of the substrate W to be processed. When calculating the predicted line width z, the predicting unit M31 may further use the actual measured value of the film thickness stored in the actual measured value storage unit M13 of the film thickness.

The output unit M20 outputs instruction information related to the processing of the substrate W based on the predicted line width z before the substrate W is processed by the coating and developing device 2 . For example, the output unit M30 includes a calculation unit M32 and a determination unit M34.

The calculation part M32 calculates the processing conditions of the substrate W suitable for obtaining the predicted line width z based on the predicted line width z calculated by the prediction part M31. This processing condition is an example of the above-mentioned instruction information. The processing condition may be, for example, the temperature of the heat treatment (PEB) in the heat treatment unit U2 of the processing module PM4. Since there is a predetermined correlation between "the temperature of the PEB" and "the line width of the photoresist pattern obtained by the temperature", an expression for the correlation can be obtained in advance through experiments. The calculation part M32 can calculate the temperature of the PEB of the substrate W to be processed next by applying the predicted line width z to the formula.

Based on the predicted line width z calculated by the predicting unit M31 , the determining unit M34 outputs instruction information (hereinafter, referred to as “continuity information”) indicating whether or not to continue the processing of the substrate W. The determination unit M34 outputs continuation information based on, for example, whether or not the predicted line width z calculated by the prediction unit M31 is within the range of a predetermined design value. For example, as shown in FIG. 6 , the judging unit M34 may display information on whether or not to continue on the display 16 .

The update unit M33 updates the line width model stored in the line width model storage unit M16 based on the "post-event data stored in the post-event data storage unit M12" and "the line width measured value stored in the line width measured value storage unit M14" . For example, the update unit M33 adds the post-event data and the measured value of the line width, and recalculates the partial regression coefficients β1 to βm. The updated line width model is stored in the line width model storage unit M16. When updating the line width model, the update unit M33 may further use the processing conditions calculated by the calculation unit M32, or may further use the actual measured value of the film thickness stored in the film thickness model storage unit M15.

As shown in FIGS. 6 and 7 , the control unit M35 controls the coating and developing device 2 based on the processing conditions calculated by the calculation unit M32 . The control part M35 can control the hot plate 71 in the heat processing unit U2, for example, and can heat-process the board|substrate W at the temperature of the PEB calculated by the calculation part M32. In addition, the above-mentioned determination unit M34 may output information on whether or not to continue to the control unit M35. When the continuation information output from the determination unit M34 to the control unit M35 indicates that the continuation is not possible, the control unit M35 may control the coating and developing device 2 to stop the processing of the substrate W.

The hardware of the controller Ctr may be constituted by, for example, one or a plurality of computers for control. As shown in FIG. 8 , the controller Ctr includes a circuit C1 as a hardware configuration. The circuit C1 may be constituted by electronic circuit components. The circuit C1 includes: a processor C2 (prediction unit, judgment unit, update unit, calculation unit, and control unit), a memory C3 (storage unit), a storage device C4 (storage unit), a drive device C5, and an input/output port C6.

The processor C2 cooperates with at least one of the memory C3 and the storage device C4 to execute the program, and execute the input and output of the signal through the input and output port C6, thereby constituting the above-mentioned functional modules. The memory C3 and the storage device C4 operate as the storage unit M1. The driving device C5 is a circuit for driving various devices of the coating and developing device 2, respectively. The input and output ports C6 are connected to the driving device C5 and various devices of the coating and developing device 2 (for example, the liquid processing unit U1, the heat treatment unit U2, the film thickness measurement unit U3, the line width measurement unit U4, the display 16 and the sensor unit SE, etc. ) to input and output signals.

The substrate processing system 1 may include one controller Ctr, or may include a controller group (control unit) composed of a plurality of controllers Ctr. When the substrate processing system 1 is provided with a controller group, the above-mentioned functional modules can be implemented by one controller Ctr, respectively, or by combining two or more controllers Ctr. When the controller Ctr is composed of a plurality of computers (circuit C1 ), the above-mentioned functional modules can be realized by one computer (circuit C1 ) respectively, or by combining two or more computers (circuit C1 ) accomplish. The controller Ctr may have a complex number processor C2. In this case, the above-mentioned functional modules can be implemented by one processor C2 respectively, or by combining two or more processors C2. A part of the functions of the controller Ctr of the substrate processing system 1 may be provided in a device different from the substrate processing system 1 and connected to the substrate processing system 1 via a network to realize various operations in this embodiment. For example, if the functions of the processor C2, the memory C3, and the storage device C4 of the plurality of substrate processing systems 1 can be integrated and implemented by one or a plurality of separate devices, the remote control and control of the plurality of substrates can be performed in a unified manner. Information and actions of the processing system 1 .

[Formation of photoresist film] Next, a method of forming the photoresist film R on the surface Wa of the substrate W will be described with reference to FIGS. 7 and 9 .

First, when starting to process the substrate W, at least one sensor unit SE disposed inside and outside the coating and developing device 2 measures data, and transmits the data to the prior data storage unit M11. Thereby, the prior data storage part M11 acquires prior data (step S11 of FIG. 9). The time point of obtaining the data in advance can be from the time after "the carrier 11 containing the substrate W that is the object of the photoresist film formation process" is mounted on the carrier station 12 until immediately after the photoresist liquid is supplied to the carrier station 12. Any point in time before the surface Wa of the substrate W.

Next, the prediction part M21 calculates the predicted film thickness of the photoresist film R based on the "previous data stored in the previous data storage part M11" and the "film thickness model (formula 1) stored in the film thickness model storage part M15" y (step S12 in FIG. 9 ). Next, the judgment unit M24 outputs the above-mentioned continuation information indicating "whether or not to continue the processing of the target substrate W" to the control unit M25 based on the predicted film thickness y output by the prediction unit M21 (step S13 in FIG. 9 ). ). When the continuation-possible information indicates that continuation is not possible (NO in step S13 in FIG. 9 ), the control unit M25 stops the coating and developing device 2 . Thereby, in the case where the photoresist film R is not formed on the target substrate W, the process ends.

On the other hand, when the continuation information display can be continued (YES in step S13 of FIG. 9 ), the calculation unit M22 calculates the processing conditions of the target substrate W based on the predicted film thickness y calculated by the prediction unit M21 (rotation speed) (step S14 in FIG. 9 ). Next, the control part M25 controls the liquid processing unit U1 of the processing module PM3 based on the processing conditions calculated by the calculation part M22. Thereby, the photoresist film R with a predetermined film thickness (film thickness corresponding to the predicted film thickness y) is formed on the surface Wa of the target substrate W (step S15 in FIG. 9 ).

Next, at least one sensor unit SE disposed inside and outside the coating and developing device 2 measures the data, and transmits the data to the post-event data storage part M12. Thereby, the post-event data storage unit M12 acquires the post-event data (step S16 in FIG. 9 ). The timing of the subsequent data acquisition can be any timing from immediately after the photoresist film R is formed on the surface Wa of the target substrate W until the next processing of the substrate W is performed.

Next, the film thickness of the photoresist film R formed on the surface Wa of the target substrate W is measured by the film thickness measurement unit U3 (step S17 in FIG. 9 ). The data of the film thickness of the photoresist film R measured by the film thickness measurement unit U3 (the actual measured value of the film thickness) are stored in the actual measured value storage part M13 of the film thickness. In addition, step S16 and step S17 may be performed in parallel, or step S17 may be performed before step S16.

Next, the update part M23 updates the film stored in the film thickness model storage part M15 based on the "post-event data stored in the post-event data storage part M12" and the "film thickness measurement value stored in the film-thickness measurement value storage part M13" Partial regression coefficients α1 to αk of the thick model (step S18 in FIG. 9 ). Thereby, when processing the subsequent substrate W, the updated film thickness model is used. As described above, the formation process of the photoresist film R on one substrate W is completed.

[Formation process of photoresist pattern] Next, a method of forming a photoresist pattern on the surface Wa of the substrate W will be described with reference to FIGS. 7 and 10 .

First, when starting to process the substrate W, at least one sensor unit SE disposed inside and outside the coating and developing device 2 measures data, and transmits the data to the prior data storage unit M11. Thereby, the advance data storage part M11 acquires advance data (step S21 of FIG. 10). The time point when the data is acquired in advance can be from "the carrier 11 containing the substrate W that is the object of the photoresist pattern formation process" being mounted on the carrier station 12, and immediately after the developer is supplied to the substrate W. Any time point before the photoresist film R on the surface Wa.

Next, the film thickness of the photoresist film R formed on the surface Wa of the substrate W is measured by the film thickness measurement unit U3 (step S22 in FIG. 10 ). The data of the film thickness of the photoresist film R measured by the film thickness measurement unit U3 (the actual measured value of the film thickness) are stored in the actual measured value storage part M13 of the film thickness. In addition, instead of re-measurement of the actual film thickness, the measured data (the data measured in step S17 in FIG. 9 ) may be used for the substrate W on which the photoresist pattern is to be formed.

Next, the prediction unit M31 is based on "the prior data stored in the prior data storage unit M11", "the film thickness model (formula 2) stored in the line width model storage unit M16", and "the actual measured value stored in the film thickness storage unit M13" The actual measured value of the film thickness”, and the predicted line width z of the photoresist pattern is calculated (step S23 in FIG. 10 ). Next, based on the predicted line width z calculated by the prediction unit M31 , the determination unit M34 outputs the above-mentioned continuation information indicating whether or not to continue the processing of the target substrate W to the control unit M35 (step S24 in FIG. 10 ). . When the continuation-possible information indicates that continuation is not possible (NO in step S24 in FIG. 10 ), the control unit M35 stops the coating and developing device 2 . Thereby, when the photoresist pattern is not formed on the target substrate W, the process ends.

On the other hand, when the continuation information display can be continued (YES in step S24 in FIG. 10 ), the calculation unit M32 calculates the processing conditions of the target substrate W based on the predicted line width z output by the prediction unit M31 ( PEB temperature) (step S25 of FIG. 10 ). Next, the control part M35 controls the heat processing unit U2 of the processing module PM4 based on the processing conditions calculated by the calculation part M32. Thereby, a photoresist pattern with a predetermined line width (line width corresponding to the predicted line width z) is formed on the surface Wa of the target substrate W (step S26 in FIG. 10 ).

Next, at least one sensor unit SE disposed inside and outside the coating and developing device 2 measures the data, and transmits the data to the post-event data storage part M12. Thereby, the post-event data storage unit M12 acquires the post-event data (step S27 in FIG. 10 ). The time point of the subsequent data acquisition can be any time point from immediately after the photoresist pattern is formed on the surface Wa of the substrate W until the next processing of the substrate W is performed.

Next, the line width of the photoresist pattern formed on the surface Wa of the target substrate W is measured by the line width measurement unit U4 (step S28 in FIG. 10 ). The data of the line width of the photoresist pattern (measured line width value) measured by the line width measurement unit U4 is stored in the line width measurement value storage part M14. In addition, step S27 and step S28 may be performed in parallel, and step S28 may also be performed before step S27.

Next, the update part M33 is based on "the post-event data stored in the post-event data storage part M12", "the line width measurement value stored in the line width measurement value storage part M14", "processing conditions calculated by the calculation part M32", The partial regression coefficients β1 to βm of the line width models stored in the line width model storage unit M16 are updated with the "measured film thickness values stored in the film thickness model storage unit M15" (step S29 in FIG. 10 ). Thereby, the updated line width model is used when the subsequent substrate W is processed. As described above, the photoresist pattern forming process for one substrate W is completed.

[effect] The film thickness of the photoresist film R and the line width of the photoresist pattern formed on the surface Wa of the substrate W are related to various states of the coating and developing device 2 . In addition, in the above example, a film thickness model representing the predicted film thickness y as a function and a line width model representing the predicted line width z as a function are prepared in advance, and by representing the various states of the coating and developing device 2 The prior data of , were applied to this model to predict the film thickness and line width in the subsequently processed substrate W. Therefore, the future processing quality of the substrate W can be determined based on the predicted film thickness y or the predicted line width z (so-called feedforward control). Therefore, by outputting instruction information related to the processing of the substrate W based on the predicted film thickness y or the predicted line width z, and executing the processing of the substrate W based on the instruction information, it is possible to save the substrate W without wasting Structures (photoresist film R, photoresist pattern) such as films are formed on the substrate W with high precision.

In addition, there is a certain correlation between "predetermined processing conditions (rotation speed) of the substrate W performed by the coating and developing device 2" and "the film thickness of the photoresist film R obtained theoretically". In addition, in the above example, the processing condition (rotation speed) at that time was calculated based on the predicted film thickness y using the correlation. Therefore, the processing conditions of the substrate W to be processed next can be automatically set. Similarly, there is a certain correlation between "the predetermined processing conditions (PEB temperature) of the substrate W performed by the coating and developing device 2" and "the line width of the photoresist pattern obtained theoretically". In addition, in the above example, the processing condition (PEB temperature) at that time was calculated based on the predicted line width z using the correlation. Therefore, the processing conditions of the substrate W to be processed next can be automatically set.

According to the above example, the coating and developing device 2 can be controlled based on the processing conditions of the substrate W that are automatically set. Therefore, the substrate W can be actually processed based on the automatically set processing conditions.

According to the above example, based on the predicted film thickness, the instruction information of whether to continue the processing of the substrate W can be output. The waste of the substrate W can be further suppressed by suspending the processing of the substrate W when the instruction information indicates that it cannot be continued.

According to the above example, a line width model representing the predicted line width z as a function can be prepared in advance, and the prior data representing various states of the coating and developing device 2 and the photoresist film R formed on the surface Wa of the substrate W can be prepared in advance. The measured values of the film thicknesses of 100 are applied to this model to predict the line widths in the subsequently processed substrate W. In this case, in the calculation of the predicted line width z, the actual value of the film thickness is further used. Therefore, the accuracy of predicting the line width z can be improved.

According to the above example, the film thickness model is updated based on the post-event data and the actual film thickness value. That is, the film thickness model is updated using various parameters when the substrate W is actually processed. Therefore, the accuracy of the film thickness model can be improved. Likewise, according to the above example, the line width model is updated based on the ex post data and the line width measured value. That is, the line width model is updated using various parameters when the substrate W is actually processed. Therefore, the accuracy of the line width model can be improved.

According to the above example, the film thickness model can be updated based on "predetermined processing conditions (rotational speed) of the substrate W performed by the coating and developing device 2", subsequent data, and actual film thickness values. In this case, since the parameters for updating the film thickness model are increased, the accuracy of the film thickness model can be improved. Likewise, according to the above example, the line width model can be updated based on the “predetermined processing conditions (PEB temperature) of the substrate W performed by the coating and developing device 2 ”, post data and line width measured values. In this case, since the parameters for updating the line width model are increased, the accuracy of the line width model can be improved.

According to the above example, the film thickness model is constituted by "multiple regression formula composed of complex partial regression coefficients and complex explanatory variables". In this case, a film thickness model in which various factors are taken into consideration can be obtained relatively easily. Similarly, the line width model is composed of a "multiple regression formula composed of complex partial regression coefficients and complex explanatory variables". In this case, it is relatively easy to obtain a line width model that takes various factors into consideration.

According to the above example, inside the liquid processing unit U1 , the sensor unit SE may be disposed above the substrate holding portion 20 . In this case, due to the influence of the downflow, the sensor unit SE is located upwind compared to the substrate holding portion 20 . Therefore, even if various processing liquids supplied to the substrate W are scattered from the substrate W, the sensor unit SE is less susceptible to the influence. Therefore, various data of the environment in the vicinity of the substrate W can be obtained by the sensor unit SE. As a result, the accuracy of the model (film thickness model or line width model) and prediction value (predicted film thickness or predicted line width) can be further improved.

[Variation] We should understand that all content disclosed in this specification is only illustrative and not restrictive. Various omissions, substitutions, and changes can be made to the above examples without departing from the scope of the patent application and the gist thereof.

(1) As shown in FIG. 11 , the calculation unit M22 may be based on the actual film thickness value stored in the film thickness actual value storage unit M13 , and may be based on the “substrate W processed before the substrate W to be processed this time”. "Related to the measured value of the film thickness, the processing conditions of the substrate W are calculated (so-called feedback control). Similarly, the calculation unit M32 may be based on the actual line width measurement value stored in the line width measurement value storage unit M14, and may be based on the actual line width measurement related to "the substrate W processed before the current processing target substrate W". value, and calculate the processing conditions of the substrate W.

(2) The controller Ctr illustrated in FIG. 12 may also be used in order to obtain the film thickness model in an actual operation. In this case, first, the control unit M25 processes the substrate W based on different processing conditions (processing programs) set in advance, and forms the photoresist film R on the surface Wa of the substrate W. Next, at least one sensor unit SE disposed inside and outside the coating and developing device 2 measures the data, and transmits the data to the post-event data storage part M12. Next, the film thickness of the photoresist film R formed on the surface Wa of the substrate W is measured by the film thickness measurement unit U3. The acquisition of the post-event data and the measurement of the film thickness of the photoresist film R may be performed in parallel, or one of them may be performed before the other. Next, the update unit M23 calculates the partial regression coefficients α1 to αk based on the "post-event data stored in the post-event data storage section M12" and "the actual film thickness value stored in the film thickness measurement value storage section M13". The film thickness model used for the calculation to predict the film thickness y is prepared in the above-described manner.

Likewise, in order to obtain the line width model in a practical manner, the controller Ctr illustrated in FIG. 12 can also be used. In this case, first, the control unit M35 processes the substrate W based on different processing conditions (processing programs) set in advance, and forms a photoresist pattern on the surface Wa of the substrate W. Next, at least one sensor unit SE disposed inside and outside the coating and developing device 2 measures the data, and transmits the data to the post-event data storage part M12. Next, the line width of the photoresist pattern formed on the surface Wa of the substrate W is measured by the line width measuring unit U4. The acquisition of the post-event data and the measurement of the line width of the photoresist pattern may be performed in parallel, or one may be performed before the other. Next, the update unit M33 calculates the partial regression coefficients β1 to βm based on the "post-event data stored in the post-event data storage section M12" and the "line width actual measurement value stored in the line width measurement value storage section M14". The line width model for the calculation of the predicted line width z is prepared in the above-described manner. In addition, the update unit M33 may calculate the partial regression coefficients β1 to βm using the actual measurement values of the film thickness stored in the film thickness model storage unit M15.

(3) In order to obtain the film thickness model in an actual operation, the controller Ctr illustrated in FIG. 13 may also be used. In this case, unlike the example of FIG. 12 , the calculation unit M22 calculates the processing conditions of the substrate W based on the actual measurement value of the film thickness of the substrate W processed before the substrate W to be processed this time (feedback control) . Next, based on the calculated processing conditions, the subsequent substrate W is processed, and the photoresist film R is formed on the surface Wa of the substrate W. As shown in FIG. Next, at least one sensor unit SE disposed inside and outside the coating and developing device 2 measures the data, and transmits the data to the post-event data storage part M12. Next, the film thickness of the photoresist film R formed on the surface Wa of the substrate W is measured by the film thickness measurement unit U3. The acquisition of the post-event data and the measurement of the film thickness of the photoresist film R may be performed in parallel, or one of them may be performed before the other. Next, the update part M23 is based on "the post-event data stored in the post-event data storage part M12", "the film thickness measurement value stored in the film thickness measurement value storage part M13", and "processing conditions calculated by the calculation part M22" , and calculate the partial regression coefficients α1~αk. The film thickness model used for the calculation to predict the film thickness y is prepared in the above-described manner.

Likewise, in order to obtain the line width model in a practical manner, the controller Ctr illustrated in FIG. 13 can also be used. In this case, unlike the example of FIG. 12 , the calculation unit M32 calculates the processing conditions of the substrate W based on the actual measurement value of the line width of the substrate W processed before the substrate W to be processed this time (feedback control) . Next, based on the calculated processing conditions, the subsequent substrate W is processed, and a photoresist pattern is formed on the surface Wa of the substrate W. As shown in FIG. Next, at least one sensor unit SE disposed inside and outside the coating and developing device 2 measures the data, and transmits the data to the post-event data storage part M12. Next, the line width of the photoresist pattern forming the surface Wa of the substrate W is measured by the line width measuring unit U4. The acquisition of the data afterwards and the measurement of the film thickness of the photoresist film R may be performed in parallel, or one of them may be performed before the other. Next, the update part M33 is based on "the post-event data stored in the post-event data storage part M12", "the line width measurement value stored in the line width measurement value storage part M14", and the "processing conditions calculated by the calculation part M32" , and calculate the partial regression coefficients β1～βm. The line width model for the calculation of the predicted line width z is prepared in the above-described manner.

(4) As shown in FIG. 14 , based on the predicted film thickness y calculated by the prediction unit M21 , the determination unit M24 may determine whether or not there is an abnormality in the prior data used as the basis for the calculation of the predicted film thickness y. The determination part M24 may also specify the vicinity of the sensor unit SE which measured the previous data based on the abnormality of the previous data. Similarly, as shown in FIG. 14 , the judgment unit M34 may judge whether there is an abnormality in the prior data used as the basis for the calculation of the predicted line width z based on the predicted line width z calculated by the prediction unit M31 . The determination part M34 may also specify the vicinity of the sensor unit SE which measured the previous data based on the abnormality of the previous data. Abnormalities in prior data can be judged using, for example, principal component analysis, the MT method (Maharanobis-Taguchi System: Maharanobis-Taguchi System), and the T method.

(5) As shown in FIG. 15 , when calculating the predicted line width z, the predicting unit M31 may further use the predicted film thickness y calculated by the predicting unit M21 . In this case, in the calculation of the predicted line width z, the predicted film thickness y is further used. Therefore, the accuracy of predicting the line width z can be improved.

(6) The processing conditions calculated by the calculation part M22 are not only the rotational speed of the substrate W in the liquid processing unit U1 of the processing module PM3, but also the heat treatment (PAB) in the thermal processing unit U2 of the processing module PM3. temperature or time. The control part M25 may control the heat processing unit U2 based on the calculated processing conditions (PAB temperature or time).

(7) The processing conditions calculated by the calculation unit M32 are not only the temperature of the heat treatment (PEB) in the heat treatment unit U2 of the treatment module PM4, but also the heat treatment (PEB) in the heat treatment unit U2 of the treatment module PM4. ) time. Alternatively, the processing conditions calculated by the calculating part M32 may be the developing time of the photoresist film R or the temperature of the developing solution in the liquid processing unit U1 of the coating and developing device 2 .

(8) The measurement of the film thickness of the photoresist film R can also be performed by the film thickness measurement unit U3 arranged inside the coating and developing device 2 , or by an external measuring device arranged outside the coating and developing device 2 . . Similarly, the measurement of the line width of the photoresist pattern can also be performed by the line width measurement unit U4 arranged inside the coating and developing device 2 , or by an external measuring device arranged outside the coating and developing device 2 .

(9) The above-mentioned feedforward control or feedback control may be performed for each substrate W, or may be performed for each plural substrates W (every batch).

(10) The state of the coating and developing device 2 may also be estimated by the Kalman filter.

(11) Choose a method for explaining variables when making a film thickness model or a line width model, for example, the method of increasing variables, the method of decreasing variables, the method of increasing and decreasing variables, or the method of using artificial intelligence ( genetic algorithm, etc.), or a combination of these methods.

[Other example] example 1. An example of the information processing apparatus includes a prediction unit based on a film thickness model representing the relationship between "the state of the substrate processing apparatus" and "the thickness of the coating film formed on the surface of the substrate by the substrate processing apparatus", and a film thickness model representing the The state of the substrate processing apparatus before the processing of the substrate by the substrate processing apparatus is used to calculate the predicted film thickness when the substrate is processed by the substrate processing apparatus; and the output section, before the substrate is processed by the substrate processing apparatus. , based on the predicted film thickness, instruction information related to the processing of the substrate is output. In this case, since various states of the substrate processing apparatus are related to the film thickness of the coating film formed on the surface of the substrate, the film thickness formed on the substrate is predicted by inputting the prior data into the film thickness model. Therefore, the future processing quality of the substrate can be determined based on the predicted film thickness (so-called feedforward control). Therefore, by outputting instruction information related to the processing of the substrate based on the predicted film thickness or predicted line width, and processing the substrate based on the instruction information, it is possible to accurately topography on the substrate without wasting the substrate. Structures such as film formation.

Example 2. The output unit of Example 1 may include a calculation unit that calculates processing conditions based on the predicted film thickness. Since there is a certain correlation between the processing conditions of the substrate and the film thickness, by using the predicted film thickness, the processing conditions of the substrate to be processed next can be automatically set.

Example 3. The apparatus of Example 2 may further include a control unit that controls the substrate processing apparatus based on processing conditions. In this case, the substrate can be actually processed based on the automatically set processing conditions.

Example 4. The output unit of any one of Examples 1 to 3 may include a judgment unit that outputs instruction information whether to continue the processing of the substrate. When the instruction information indicates that the processing of the substrate W cannot be continued, the waste of the substrate W can be further suppressed.

Example 5. The apparatus of any one of Examples 1 to 4 may further include an update section based on the post-event data indicating "the state of the substrate processing apparatus after processing the substrate", and formed on the substrate by processing the substrate through the substrate processing apparatus. The measured value of the film thickness of the coating film on the surface is used to update the film thickness model. In this case, the film thickness model is updated using various parameters when the substrate is actually processed. Therefore, the accuracy of the film thickness model can be improved.

Example 6. In the apparatus of Example 2, the update unit may update the film thickness model based on the processing conditions of the substrate performed by the substrate processing apparatus, subsequent data, and actual film thickness values. In this case, the film thickness model is updated using various parameters when the substrate is actually processed. Therefore, the accuracy of the film thickness model can be further improved.

Example 7. In any of the apparatuses in Examples 1 to 6, the film thickness model may be a multiple regression formula composed of complex partial regression coefficients and complex explanatory variables. In this case, a film thickness model in which various factors are taken into consideration can be easily obtained.

Example 8. Another example of the information processing apparatus includes a prediction unit based on a line width model representing the relationship between "the state of the substrate processing apparatus" and "the line width of the pattern formed on the surface of the substrate by the substrate processing apparatus", and a line width model representing the The state of the substrate processing apparatus before the processing of the substrate by the substrate processing apparatus is used to calculate the predicted line width when the substrate is processed by the substrate processing apparatus; and the output section, before the substrate is processed by the substrate processing apparatus. , which outputs instruction information related to the processing of the substrate based on the predicted line width. In this case, the same functions and effects as those of the device of Example 1 can be obtained.

Example 9. The output unit of Example 8 may include a calculation unit that calculates processing conditions based on the predicted line width. In this case, the same effects as those of the device of Example 2 can be obtained.

Example 10. The apparatus of Example 8 may further include a control unit that controls the substrate processing apparatus based on processing conditions. In this case, the same effect as the device of Example 3 can be obtained.

Example 11. The output unit in any one of Examples 8 to 10 may include a judgment unit that outputs instruction information whether to continue the processing of the substrate. In this case, the same functions and effects as those of the device of Example 4 can be obtained.

Example 12. The device of any one of Examples 8 to 11 may further include an update section based on the post-event data indicating "the state of the substrate processing apparatus after processing the substrate", and the area formed on the substrate by processing the substrate through the substrate processing apparatus. The measured value of the line width of the pattern on the surface is used to update the line width model. In this case, the same effects as those of the device of Example 2 can be obtained.

Example 13. In the apparatus of Example 12, the updating unit may also update the line width model based on the processing conditions of the substrate performed by the substrate processing apparatus, post-event data, and line width measured values. In this case, the same effect as the device of Example 3 can be obtained.

Example 14. In any of the apparatuses in Examples 8 to 13, the prediction unit may be based on the line width model, the prior data, and the measured value of the film thickness of the coating film formed on the surface of the substrate by processing the substrate through the substrate processing apparatus. Calculate the predicted line width. In this case, in calculating the predicted line width, the measured value of the film thickness is further used. Therefore, the accuracy of predicting the line width can be improved.

Example 15. In any of the apparatuses in Examples 8 to 13, the prediction unit is based on a line width model, prior data, and representations of "the state of the substrate processing apparatus" and "the difference between the coating film formed on the surface of the substrate by the substrate processing apparatus" The film thickness model based on the relationship between the film thickness and the predicted line width is calculated. In this case, the predicted film thickness is further used in the calculation of the predicted line width. Therefore, the accuracy of predicting the line width can be improved.

Example 16. In any one of the apparatuses in Examples 8 to 15, the line width model may be a multiple regression formula composed of complex partial regression coefficients and complex explanatory variables. In this case, the same functions and effects as those of the device of Example 6 can be obtained.

Example 17. In the apparatus of Example 7 or Example 16, the complex partial regression coefficient may also include at least one value selected from the group consisting of: a value based on the viscosity of the coating liquid applied to the substrate, a value based on the substrate The value based on the temperature inside the processing apparatus, the value based on the relative humidity inside the substrate processing apparatus, the value based on the difference in air pressure inside and outside the substrate processing apparatus, the value based on the wind speed in the substrate processing apparatus, the value based on the substrate processing apparatus The value obtained by the structure of the processing apparatus, and the value obtained by the kind of organic solvent used for the process of a board|substrate.

Example 18. In the devices of Examples 1 to 17, the prior data may also include values obtained by at least one sensor from the group consisting of: measuring the viscosity of the coating liquid applied to the substrate Viscosity sensor, temperature sensor measuring temperature inside substrate processing apparatus, humidity sensor measuring relative humidity inside substrate processing apparatus, differential pressure sensor measuring air pressure difference inside and outside substrate processing apparatus, and measuring substrate The wind speed sensor that handles the wind speed inside the device.

Example 19. In the apparatus of Example 18, at least one sensor is disposed within the processing chamber or the processing chamber of the substrate processing apparatus.

Example 20. In the apparatus of Example 19, at least one sensor is disposed outside the processing chamber of the substrate processing apparatus, and is disposed in the substrate conveyance path or the substrate storage container.

Example 21. In the apparatus of Example 19 or Example 20, at least one sensor is disposed in the processing chamber of the substrate processing apparatus, and is disposed above the substrate holding portion provided in the processing chamber. In the processing chamber, the airflow generally flows downward (downflow) toward the substrate. Therefore, on the downstream side of the substrate, various processing liquids for processing the substrate are easily scattered. According to Example 19, various data in the environment close to the substrate can be obtained by the sensor without being affected by various processing liquids. Therefore, the accuracy of the model (film thickness model or line width model) or prediction value (predicted film thickness or predicted line width) can be further improved.

Example 22. An example of the information processing method includes the following steps: based on a film thickness model representing the relationship between "the state of the substrate processing apparatus" and "the thickness of the coating film formed on the surface of the substrate by the substrate processing apparatus", and the steps of Calculate the predicted film thickness when the substrate is processed by the substrate processing device based on the prior data of the state of the substrate processing device before the substrate processing by the substrate processing device; and before the substrate is processed by the substrate processing device, based on the predicted film thickness Thick and output instruction information related to the processing of the substrate. In this case, the same functions and effects as those of the device of Example 1 can be obtained.

Example 23. Another example of the information processing method includes the steps of: based on a line width model representing the relationship between "the state of the substrate processing apparatus" and "the line width of the pattern formed on the surface of the substrate by the substrate processing apparatus"; Calculate the predicted line width when the substrate is processed by the substrate processing device; and before the substrate is processed by the substrate processing device, based on the predicted line width Wide and output instruction information related to the processing of the substrate. In this case, the same functions and effects as those of the device of Example 1 can be obtained.

Example 24. The computer-readable recording medium may also record a program for causing the information processing apparatus to execute the method of Example 22 or Example 23. In this case, the same functions and effects as those of the device of Example 1 can be obtained. In this specification, the computer-readable recording medium may also include: non-transitory computer recording medium (eg, various main storage devices or auxiliary storage devices), transitory computer recording medium ) (for example, a data signal available via a network).

1: Substrate processing system 2: Coating and developing device (substrate processing device) 3: Exposure device 4: Vehicle Block 5: Process the block 6: Interface block 11: Carrier (container) 11a: Side 12: Vehicle Station 13: Move in and move out department 13a: Opening and closing doors 14,15: Shed unit 16: Display (display device) 20: Substrate holding part 21: Rotary part 22: Shaft 23: Retaining part 30: Liquid supply part 31: Supply Agency 32: Nozzle 40: Liquid supply part 41: Supply Agency 42: Nozzle 50: Cover member 51: Ontology 52: Drain port 53: exhaust port 60: Shell 61: Move in and move out 70: Heating part 71: Hot Plate 71a: Through hole 72: Lifting mechanism 72a: Lifting pin 80: Cooling department 81: Cooling plate 81a: slit 82: Lifting mechanism 82a: Lifting pin A1~A7: carrying arm B: Blower Ctr: controller (information processing device) C1: Circuit C2: Processor (prediction part, judgment part, update part, calculation part, control part) C3: Memory (storage part) C4: Storage device (storage section) C5: Drive C6: Input and output port L1, L2: Treatment liquid M1: Storage Department M11: Advance Data Storage Department M12: Post-event data storage department M13: Membrane thickness measurement value storage unit M14: Line width measured value storage part M15: Film Thickness Model Storage M16: Linewidth Model Storage M2: Film Thickness Relationship Processing Section M21: Forecasting Department M22: Computing Department M23: Update Department M24: Judgment Department M25: Control Department M3: Line width relationship processing unit M31: Forecasting Department M32: Computing Department M33: Update Department M34: Judgment Department M35: Control Department PM~PM4: Processing module R: photoresist film (coating film) RM: Recording Media S11~S18, S21~S29: Steps SE: sensor unit (sensor) U1: Liquid Handling Unit (Processing Chamber) U2: Heat Treatment Unit (Processing Chamber) U3: Film Thickness Measurement Unit (Processing Chamber) U4: Line width measurement unit (processing chamber) W: substrate Wa: surface y: predicted film thickness z: predicted line width

FIG. 1 is a perspective view showing an example of a substrate processing system. FIG. 2 is a side view schematically showing the interior of the substrate processing system of FIG. 1 . FIG. 3 is a top view schematically showing the interior of the substrate processing system of FIG. 1 . FIG. 4 is a side view schematically showing an example of a liquid processing unit. FIG. 5 is a plan view schematically showing an example of a heat treatment unit. FIG. 6 is a block diagram showing an example of a substrate processing system. FIG. 7 is a block diagram showing an example of a controller. FIG. 8 is a schematic diagram showing an example of the hardware configuration of the controller. FIG. 9 is a flowchart for explaining an example of the steps of forming a photoresist film on the surface of the substrate. FIG. 10 is a flowchart for explaining an example of the steps of forming a photoresist pattern on the surface of the substrate. FIG. 11 is a block diagram showing another example of the controller. FIG. 12 is a block diagram showing another example of the controller. FIG. 13 is a block diagram showing another example of the controller. FIG. 14 is a block diagram showing another example of the controller. FIG. 15 is a block diagram showing another example of the controller.

Crt: controller (information processing device)

M2: Film Thickness Relationship Processing Section

M3: Line width relationship processing unit

M11: Advance Data Storage Department

M12: Post-event data storage department

M13: Membrane thickness measurement value storage unit

M14: Line width measured value storage part

M15: Film Thickness Model Storage

M16: Linewidth Model Storage

M21: Forecasting Department

M22: Computing Department

M23: Update Department

M24: Judgment Department

M25: Control Department

M31: Forecasting Department

M32: Computing Department

M33: Update Department

M34: Judgment Department

M35: Control Department

Claims (24)

An information processing device, comprising: The prediction unit is based on a film thickness model representing the relationship between the state of the substrate processing apparatus and the film thickness of the coating film formed on the surface of the substrate by the substrate processing apparatus, and based on the film thickness model representing the processing of the substrate by the substrate processing apparatus Pre-processing data on the state of the substrate processing apparatus before processing to calculate a predicted film thickness when the substrate is processed by the substrate processing apparatus; and The output unit outputs instruction information related to the processing of the substrate based on the predicted film thickness before the substrate is processed by the substrate processing apparatus. The information processing device according to claim 1, wherein, The output unit has a calculation unit that calculates processing conditions of the substrate executed by the substrate processing apparatus based on the predicted film thickness. The information processing device as described in claim 2, further comprising: The control unit controls the substrate processing apparatus based on the processing conditions calculated by the calculation unit. The information processing device according to any one of claims 1 to 3, wherein, The output unit has a judgment unit that outputs instruction information whether or not to continue processing of the substrate based on the predicted film thickness. The information processing device as described in claim 1 or 2, further comprising: An update unit that updates based on subsequent data showing the state of the substrate processing apparatus after processing the substrate, and an actual measured value of the film thickness of the coating film formed on the surface of the substrate by processing the substrate through the substrate processing apparatus The film thickness model. The information processing device according to claim 5, wherein, The updating section updates the film thickness model based on the processing conditions of the substrate performed by the substrate processing apparatus, the post-event data, and the actual measured value of the film thickness. The information processing device according to claim 1 or 2, wherein, The film thickness model is a multiple regression formula composed of complex partial regression coefficients and complex explanatory variables. An information processing device, comprising: A prediction unit based on a line width model representing a relationship between a state of a substrate processing apparatus and a line width of a pattern formed on a surface of a substrate by the substrate processing apparatus, and representing processing of the substrate by the substrate processing apparatus prior data on the state of the substrate processing apparatus before, to calculate the predicted line width when the substrate is processed by the substrate processing apparatus; and The output unit outputs instruction information related to the processing of the substrate based on the predicted line width before the substrate is processed by the substrate processing apparatus. The information processing device according to claim 8, wherein, The output unit has a calculation unit that calculates processing conditions of the substrate performed by the substrate processing apparatus based on the predicted line width. The information processing device as described in claim 9, further comprising: The control unit controls the substrate processing apparatus based on the processing conditions calculated by the calculation unit. The information processing device according to any one of claims 8 to 10, wherein, The output unit has a judgment unit that outputs instruction information whether to continue processing of the substrate based on the predicted line width. The information processing device as described in claim 8 or 9, further comprising: an update unit that updates the substrate based on subsequent data representing the state of the substrate processing apparatus after processing the substrate, and an actual measurement value of the line width of a pattern formed on the surface of the substrate by processing the substrate by the substrate processing apparatus Lineweight model. The information processing device of claim 12, wherein, The updating section updates the line width model based on the processing conditions of the substrate performed by the substrate processing apparatus, the post-event data and the measured value of the line width. The information processing device according to claim 8 or 9, wherein, The prediction section calculates the predicted line width based on the line width model, the prior data, and the measured value of the film thickness of the coating film formed on the surface of the substrate by processing the substrate through the substrate processing apparatus. The information processing device according to claim 8 or 9, wherein, The prediction section is based on the line width model, the prior data, and a film thickness model representing the relationship between the state of the substrate processing apparatus and the film thickness of the coating film formed on the surface of the substrate by the substrate processing apparatus, and Calculate the predicted line width. The information processing device according to claim 8 or 9, wherein, The line width model is a multiple regression formula composed of complex partial regression coefficients and complex explanatory variables. The information processing device according to claim 7, wherein, The complex partial regression coefficient includes at least one value selected from the group consisting of: A value based on the viscosity of the coating liquid applied to the substrate, a value based on the temperature in the substrate processing apparatus, a value based on the relative humidity in the substrate processing apparatus, and the air pressure inside and outside the substrate processing apparatus A value derived from the difference, a value derived from the wind speed in the substrate processing apparatus, a value derived from the structure of the substrate processing apparatus, and a value derived from the type of organic solvent used for processing the substrate. The information processing device according to claim 1 or 8, wherein, The prior data includes values obtained by at least one sensor selected from the group consisting of: A viscosity sensor for measuring the viscosity of the coating liquid applied to the substrate, a temperature sensor for measuring the temperature in the substrate processing apparatus, a humidity sensor for measuring the relative humidity in the substrate processing apparatus, and a measurement for the substrate processing apparatus A differential pressure sensor for air pressure difference between inside and outside, and an air velocity sensor for measuring wind speed in the substrate processing apparatus. The information processing device of claim 18, wherein, The at least one sensor is disposed inside or outside the processing chamber of the substrate processing apparatus. The information processing device of claim 19, wherein, The at least one sensor is disposed outside the processing chamber of the substrate processing apparatus, and is disposed in a conveyance path of the substrate or a container for the substrate. The information processing device of claim 19, wherein, The at least one sensor is arranged in the processing chamber of the substrate processing apparatus, and is arranged above the substrate holding portion provided in the processing chamber. An information processing method comprising the following steps: A film thickness model based on a film thickness model representing the relationship between the state of the substrate processing apparatus and the film thickness of the coating film formed on the surface of the substrate by the substrate processing apparatus, and a film thickness model representing the substrate before processing by the substrate processing apparatus advance data on the state of the substrate processing apparatus to calculate the predicted film thickness when the substrate is processed by the substrate processing apparatus; and Before processing the substrate by the substrate processing apparatus, instruction information related to the processing of the substrate is output based on the predicted film thickness. An information processing method comprising the following steps: Based on a line width model representing the relationship between the state of the substrate processing apparatus and the line width of the pattern formed on the surface of the substrate by the substrate processing apparatus, and the prior information on the state of the substrate processing apparatus to calculate the predicted line width when the substrate is processed by the substrate processing apparatus; and Before processing the substrate by the substrate processing apparatus, instruction information related to the processing of the substrate is output based on the predicted line width. A computer-readable recording medium recording a program for causing an information processing apparatus to execute the information processing method described in claim 22 or 23.

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