TW202145433A - Substrate holder having an elastic substrate support - Google Patents

Substrate holder having an elastic substrate support Download PDF

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TW202145433A
TW202145433A TW110112204A TW110112204A TW202145433A TW 202145433 A TW202145433 A TW 202145433A TW 110112204 A TW110112204 A TW 110112204A TW 110112204 A TW110112204 A TW 110112204A TW 202145433 A TW202145433 A TW 202145433A
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substrate
structural elements
top side
substrate holder
spaces
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TW110112204A
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迪特馬爾 凱佩爾
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德商愛沛法歐洲公司
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12Organic material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50Substrate holders
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process
    • C23C14/541Heating or cooling of the substrates
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C23C16/463Cooling of the substrate
    • C23C16/466Cooling of the substrate using thermal contact gas

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The invention relates to a substrate holder (2) for use in a substrate handling apparatus (1), having a top side (2') which can be temperature-controlled by the supply or discharge of heat, which top side carries a substrate (7) during substrate handling, the rear side (8) of which substrate extends in a plane parallel to the top side (2') and points toward the top side (2'), wherein the surface of the rear side (8) has at least one zone (8') which is uneven or which bulges out of a plane, and an apparatus for carrying out a substrate handling process by means of such a substrate holder (2). In order to ensure uniform heating of the substrate (7), a resiliently deformable substrate support (10) arranged on the top side (2') is provided which, as a result of a resilient deformation, comes into contact with the surface of the rear side (8, 8'). The substrate support (10) can be formed by a plurality of resilient structural elements (11, 12, 13, 14, 15).

Description

具有彈性基板支架的基板架Substrate Rack with Flexible Substrate Holder

本發明係有關於一種用於應用在基板處理裝置中之基板架,具有可透過供熱或散熱來調溫的頂側,其在基板處理中承載基板,該基板在平行於頂側之平面中延伸的背側面向該頂側,其中,該背側之表面具有至少一個不平的或自一平面拱起的區域。The invention relates to a substrate rack for use in a substrate processing apparatus, having a top side that can be tempered by heating or cooling, which carries substrates in a plane parallel to the top side during substrate processing The extended backside faces the topside, wherein the surface of the backside has at least one region that is uneven or arched from a plane.

本發明亦有關於一種基板處理製程,其中在基板架之頂側上設有基板,並且藉由該基板架對該基板進行調溫。可對基板進行冷卻或加熱。在該處理製程中,可在基板之面向製程室的表面上沉積層序列或單個層。可透過將蒸汽或氣體饋送入製程室來進行此操作,為此設有氣體入口構件。亦可將層或基板之表面之區域移除,例如透過將蝕刻氣體饋送入製程室實現。該基板處理製程特別是為用於在基板上、尤其玻璃基板上製造OLED所需之層的方法。層沉積亦為聚合製程。The present invention also relates to a substrate processing process, wherein a substrate is provided on the top side of a substrate holder, and the temperature of the substrate is regulated by the substrate holder. The substrate can be cooled or heated. During this process, a sequence of layers or a single layer may be deposited on the chamber-facing surface of the substrate. This can be done by feeding steam or gas into the process chamber, for which gas inlet means are provided. Areas of the surface of the layer or substrate can also be removed, eg by feeding an etching gas into the process chamber. The substrate processing process is in particular a method for producing the layers required for OLEDs on substrates, especially glass substrates. Layer deposition is also a polymerization process.

本發明亦有關於一種基板處理裝置,其中在基板架之頂側上設有基板。該基板架可具有調溫裝置,例如加熱裝置或冷卻裝置,用於對基板架之承載基板的頂側進行加熱或冷卻。一製程室在基板架之頂側與氣體入口構件之間延伸,可藉由該氣體入口構件將蒸汽或氣體饋送入該製程室。該氣體入口構件可具有蓮蓬頭之形狀。透過數個設於該氣體入口構件之排氣面中的排氣通道,載氣能夠將該蒸汽或反應氣體輸送入製程室。該基板處理裝置亦可具有氣體出口構件,至少載氣能夠透過該氣體出口構件自製程室排出。The present invention also relates to a substrate processing apparatus in which a substrate is provided on the top side of a substrate holder. The substrate rack may have a temperature regulating device, eg a heating device or a cooling device, for heating or cooling the top side of the substrate rack carrying the substrates. A process chamber extends between the top side of the substrate rack and the gas inlet member through which steam or gas can be fed into the process chamber. The gas inlet member may have the shape of a shower head. The carrier gas can deliver the vapor or reaction gas into the process chamber through a plurality of exhaust channels provided in the exhaust surface of the gas inlet member. The substrate processing apparatus may also have a gas outlet member, at least the carrier gas can be discharged from the process chamber through the gas outlet member.

DE 10 2011 078 673 A1揭示過用於基板之真空處理的一種方法以及一種裝置,其中自基板伸出多個層片,其將基板承載。DE 10 2011 078 673 A1 discloses a method and an apparatus for the vacuum treatment of substrates, in which a plurality of layers protrude from the substrate, which carry the substrate.

US 5,605,574 A描述過一種基板架,在該基板架上設有多個折褶風箱狀的間隔元件,其將基板承載。US 5,605,574 A describes a substrate holder on which a plurality of pleated bellows-like spacer elements are provided, which carry the substrates.

JP 2003-239070 A描述過一種基板架,其支撐在彈性結構元件上。JP 2003-239070 A describes a substrate holder supported on elastic structural elements.

在JP 2006-190805中描述過一種裝置,其包含用於將基板保持在基板架上的保持裝置。US 5,199,483揭示過一種用於保持基板的裝置,藉由此裝置對基板進行冷卻。A device is described in JP 2006-190805, which includes a holding device for holding a substrate on a substrate holder. US 5,199,483 discloses a device for holding a substrate by means of which the substrate is cooled.

WO 2006/036992A1描述過一種方法,其用於對貼靠於基板架之頂側上的基板進行冷卻。WO 2006/036992 A1 describes a method for cooling a substrate resting on the top side of a substrate holder.

WO 2006/061784A1以及US 2010/0247804A1亦揭示過用於將基板保持在經冷卻之基板架上的裝置。WO 2006/061784A1 and US 2010/0247804A1 also disclose devices for holding substrates on cooled substrate holders.

US 2016/0376697A1亦歸屬於先前技術。在DE 10 2015 118 765 A1中描述過一種利用蓮蓬頭以及經冷卻之基板架來沉積OLED的裝置。US 2016/0376697A1 also belongs to the prior art. In DE 10 2015 118 765 A1 an apparatus for depositing OLEDs using a shower head and a cooled substrate holder is described.

就例如在最後提及之DE 10 2015 118 765 A1中描述的習知的基板處理方法而言,可為玻璃基板或塑膠基板的待處理基板藉由其背側貼靠在經冷卻之基板架之頂側上。透過經加熱之氣體入口構件,將預先例如透過將提供之氣膠蒸發而產生之蒸汽饋送入處理裝置之製程室。氣體入口構件之溫度高於蒸汽之冷凝溫度。藉由設於基板架中之冷卻裝置,將承載基板的頂側冷卻至遠低於蒸汽之冷凝溫度的溫度。透過藉由位於基板之背側與基板架之頂側之間的間隙持續地散熱,將基板面向製程室的前側調節至一溫度,在此溫度下,蒸汽在前側上冷凝,從而沉積層、特別是有機層。可相繼沉積數個層,其具有互不相同的層組成。可透過遮罩對此操作進行結構化。基板貼靠於基板架之頂側上的背側大致在一平面中延伸。但至少在一部分區域內,背側之表面有別於精確的數學平面。此等偏差一方面歸因於背側之表面之天然粗糙度,但另一方面亦歸因於製造公差。背側之表面之不平度亦可能是自平面拱起之區域。若此種基板貼靠在基板架之同樣僅大致平整之頂側上,則在基板之背側與基板架之頂側之間僅發生點式接觸。僅在此等接觸點上直接透過兩個固體之接觸進行熱輸運。在位於接觸點之間的區域內,或是透過輻射,或是藉由透過存在於位於基板之背側與基板架之頂側之間的空間中的氣體進行熱傳導,以進行熱輸運。穿過此空間之熱流受氣體之壓力、間隙高度以及氣體之莫耳質量影響。其中,相關參數為氣體分子之平均自由徑或克努森數。由於自基板至基板架之熱流局部有所不同,基板之待塗佈的前側具有不均勻的橫向溫度曲線。In the case of the conventional substrate processing methods described, for example, in the last-mentioned DE 10 2015 118 765 A1, the substrate to be processed, which may be a glass substrate or a plastic substrate, rests with its rear side against the cooled substrate holder. on the top side. Through the heated gas inlet member, the vapor previously generated, for example by evaporating the supplied aerosol, is fed into the process chamber of the processing device. The temperature of the gas inlet member is higher than the condensation temperature of the steam. The top side of the carrier substrate is cooled to a temperature well below the condensation temperature of the vapor by means of a cooling device located in the substrate holder. By continuously dissipating heat through the gap between the backside of the substrate and the top side of the substrate frame, the front side of the substrate facing the process chamber is adjusted to a temperature at which the vapor condenses on the front side, thereby depositing layers, particularly is the organic layer. Several layers can be deposited successively, which have mutually different layer compositions. This operation can be structured through a mask. The backside of the substrate resting on the top side of the substrate holder extends substantially in a plane. But at least in some areas, the surface of the backside differs from the exact mathematical plane. These deviations are due on the one hand to the natural roughness of the surface of the backside, but also to manufacturing tolerances on the other hand. The unevenness of the surface on the back side may also be an area that is arched from the plane. If such a substrate rests on the top side of the substrate holder, which is also only approximately flat, only point contact occurs between the backside of the substrate and the top side of the substrate holder. Heat transport occurs directly through the contact of the two solids only at these contact points. In the region between the contact points, heat transport occurs either by radiation or by thermal conduction through the gas existing in the space between the backside of the substrate and the topside of the substrate holder. The heat flow through this space is affected by the pressure of the gas, the height of the gap, and the molar mass of the gas. Among them, the relevant parameter is the mean free path of gas molecules or the Knudsen number. The front side of the substrate to be coated has a non-uniform lateral temperature profile due to local differences in the heat flow from the substrate to the substrate holder.

本發明之目的在於:提供用於將基板之前側之橫向溫度曲線均勻化的手段。An object of the present invention is to provide means for uniformizing the lateral temperature profile of the front side of the substrate.

本發明之目的特別是在於:提供用於沉積OLED的一種裝置及一種方法,其中層品質具有儘可能大之橫向均勻性。The object of the present invention is, in particular, to provide a device and a method for depositing OLEDs in which the layer quality has the greatest possible lateral uniformity.

本發明用以達成上述目的之解決方案為在申請專利範圍中給出之發明。附屬項不僅為在並列請求項中給出之發明的有利改進方案,亦為該目的之獨立解決方案。The solution of the present invention to achieve the above object is the invention given in the scope of the patent application. The accessory is not only an advantageous improvement of the invention given in the concurrent claim, but also an independent solution to this purpose.

本發明提出:該基板不直接位於該基板架之頂側上。在基板架之頂側與基板之背側之間設有基板支架。該基板支架係建構成因彈性變形而與該背側之表面接觸式抵靠。因此,該基板支架可由一個主體、但亦可由數個主體構成,該等主體實現位於基板架與基板之間的熱流,其中,該基板架較佳為冷卻體,熱自基板穿過間隔區域流動至此冷卻體,其中,該基板支架設置在該間隔區域內。可採用以下方案:該基板支架具有一或數個結構元件。該等結構元件可為彈性體,其能夠彎曲及/或壓縮。該等結構元件可整面地佈置在該頂側上。但該等結構元件亦可僅局部地佈置在該頂側上。在各結構元件之間可存在空間,其係經氣體填充。但亦可將氣體饋送入該等空間。此外可採用以下方案:該等結構元件僅佈置在該頂側之被基板遮蓋的區域的邊緣上。故可採用以下方案:該等結構元件僅承載基板之邊緣。若在結構元件之間有空隙或空間,或者若結構元件僅佈置在基板之邊緣上,則可自基板架出發將調溫氣體饋送入該空間。在此情形下,特別是在空間之區域內,藉由透過饋送入該空間之氣體進行的熱傳導來實現自基板至基板架的熱輸運。可設有氣體輸送管線,其自基板架出發通入該空間。透過此輸送管線能夠將調溫氣體饋送入位於基板之背側、基板架之頂側與結構元件之側壁之間的空間。該調溫氣體可流過該空間,或可流過數個空間。沿基板之邊緣佈置的結構元件可藉由其空間形成一迷宮式密封裝置。該迷宮式密封裝置藉此將內部區域與周圍環境隔絕。該調溫氣體可為氮氣、氬氣、氖氣、氪氣、氙氣、氫氣或氦氣。該調溫氣體亦可為混合物,其中特別是採用以下方案:該混合物之至少90百分比由前述氣體中之一個或數個構成。但該等結構元件亦可以在基板架之頂側之整個面的範圍內均勻分佈的方式佈置。該等結構元件可以幾何規則或統計均勻的方式佈置在頂側之範圍內。該等結構元件可具有一致的尺寸。該等結構元件亦可具有一致的構造。舉例而言,該等結構元件可以形成長形條、肋部或立方體狀的塊。該等結構元件可具有相互平行延伸的側壁。但該等結構元件亦可具有經底切之側壁,使得結構元件之用以固定在基板架之頂側上的底腳區域的基本輪廓小於形成支承面的頭部區域,基板之背側支撐在該支承面上。可將該調溫氣體饋送入位於該等結構元件之間的空間。The invention proposes that the substrate is not directly on the top side of the substrate holder. A substrate holder is provided between the top side of the substrate holder and the back side of the substrate. The substrate holder is configured to abut against the surface of the backside in contact due to elastic deformation. Therefore, the substrate holder can be composed of one main body, but also several main bodies, which realize the heat flow between the substrate holder and the substrate, wherein the substrate holder is preferably a cooling body, and the heat flows from the substrate through the spaced area Heretofore, the cooling body, wherein the base plate holder is arranged in the spaced region. The following solution can be adopted: The substrate holder has one or several structural elements. These structural elements may be elastomers, which are capable of bending and/or compression. The structural elements can be arranged on the top side over the entire surface. However, the structural elements can also be arranged only partially on the top side. There may be spaces between the structural elements, which are filled with gas. But it is also possible to feed gas into these spaces. Furthermore, it is possible to use the solution that the structural elements are only arranged on the edge of the area of the top side which is covered by the substrate. Therefore, the following solution can be adopted: the structural elements only carry the edge of the substrate. If there are gaps or spaces between the structural elements, or if the structural elements are only arranged on the edges of the substrate, the temperature-controlling gas can be fed into this space starting from the substrate holder. In this case, especially in the region of the space, heat transport from the substrate to the substrate holder is achieved by heat conduction through the gas fed into the space. A gas delivery line may be provided which leads from the substrate holder into the space. Through this conveying line it is possible to feed the tempering gas into the space between the back side of the substrate, the top side of the substrate holder and the side walls of the structural element. The tempering gas may flow through the space, or may flow through several spaces. Structural elements arranged along the edge of the substrate can form a labyrinth seal with their spaces. The labyrinth seal thereby isolates the inner region from the surrounding environment. The tempering gas can be nitrogen, argon, neon, krypton, xenon, hydrogen or helium. The tempering gas can also be a mixture, wherein in particular the following solution is used: at least 90 percent of the mixture consists of one or more of the aforementioned gases. However, the structural elements can also be arranged uniformly distributed over the entire surface of the top side of the substrate holder. The structural elements may be arranged within the confines of the top side in a geometrically regular or statistically uniform manner. The structural elements may have uniform dimensions. The structural elements may also have a uniform configuration. For example, the structural elements may form elongated strips, ribs or cube-shaped blocks. The structural elements may have side walls extending parallel to each other. However, the structural elements can also have undercut side walls, so that the basic contour of the foot area of the structural element for fixing on the top side of the substrate holder is smaller than the head area forming the bearing surface, the back side of the substrate being supported on the support surface. The tempering gas can be fed into the space between the structural elements.

可以例如高於製程室壓力2 mbar、5 mbar的過壓將調溫氣體饋送入空間。該過壓較佳小於1 mbar。但其亦可小於5 mbar。製程室壓力可落在介於1 mbar與5 mbar之間的範圍內。但其亦可落在介於0.5 mbar與1 mbar之間的範圍內。該製程室壓力特別是可小於1 mbar或0.5 mbar。為了避免中間區域內之較高壓力造成基板抬升,設有保持構件。此類保持構件可以機械方式起作用,例如,在基板上可貼靠有一遮罩,其重量提供力。但亦可採用以下方案:使用磁力或靜電力來保持基板。但作為例如直接施加(例如黏合)至基板架之表面、尤其金屬表面的各結構元件的替代方案,該基板支架亦可由一或數個具有數個突出部的主體構成,該等主體係施加在該基板架之頂側上。特別是採用以下方案:此種主體為襯墊,其具有背離頂側的突出部。此等突出部係可彈性變形,例如可彎曲及/或可壓縮。但亦可採用以下方案:該基板支架係由一或數個發泡體或者可以其他方式壓縮之主體構成。此種主體具有兩個相互背離之表面,其可整面地緊貼至基板架之頂側之表面或基板之背側之表面。該主體可為開放氣室式發泡體。將玻璃、矽,但亦將氧化鋁或鋁、銅、鈦或另一金屬用作基板。該基板亦可為塑膠、聚醯胺,特別是為透明塑膠。該基板可具有超過0.15 m2 的平面延伸度。該基板亦可大於1 m2 或大於2 m2 。該等結構元件亦可為能夠彎曲的纖維或細柱。此類結構元件如絨毛或刷毛那般自基板架之頂側伸出。具備如此可撓性之結構元件能夠在力作用下彎曲,從而藉由其側壁承載基板。該等結構元件之高度較佳僅略大於基板之背側之最大不平度。但結構元件之高度亦可更大。結構元件之高度可大於5 μm、大於10 μm、大於50 μm、大於100 μm或大於1 mm。但結構元件之高度應小於5 mm。根據一較佳技術方案,該等結構元件之高度介於50μm與1 mm之間。該高度較佳為約50μm至100μm。結構元件之橫向延伸度可小於其高度。特別是當結構元件建構為柱或纖維(如絨毛或刷毛)時,其橫截面之圓當量直徑為其高度之至多十分之一。結構元件之典型橫向尺寸係小於5 cm或小於1 mm。但橫向尺寸亦可大於5 cm。結構元件例如可具有大於0.2 mm、大於0.5 mm、大於1 mm、大於2 mm或大於5 mm的長度。特別是採用以下方案:結構元件之最大長度為20 mm。結構元件所佔據的面積可小於50 mm2 。結構元件之寬度可大於5 mm或小於1 mm。該等結構元件亦可具有腔室。該等結構元件特別是可建構為墊子。此種結構元件具有彈性包裹物。可將一氣體饋送入經該包裹物包圍之容積,該氣體賦予墊子彈性。饋送入容積的該氣體亦可為調溫氣體,其賦予墊子導熱性。可採用以下方案:使得調溫氣體在處理製程期間穿過墊子流動。在此情形下,該容積具有進線及出線。但亦可將一調溫液體饋送入該容積。亦可採用以下方案:該容積係封閉。該墊子亦可為凝膠墊,在其容積中設有導熱的凝膠。可採用以下方案:該基板位於單獨一個墊子、例如凝膠墊上。在此情形下,該基板支架由一個凝膠墊構成。但亦可採用以下方案:該基板支架由數個墊子、特別是凝膠墊構成。特別是可採用以下方案:該基板架之頂側完全地、即100百分比地配設有該基板支架,並且特別是配設有由該基板支架形成之結構元件。但亦可採用以下方案:至少90百分比、10百分比、3百分比或1百分比的部分配設有結構元件。The tempering gas can be fed into the space at an overpressure of, for example, 2 mbar, 5 mbar above the process chamber pressure. The overpressure is preferably less than 1 mbar. However, it can also be less than 5 mbar. The process chamber pressure can fall in the range between 1 mbar and 5 mbar. But it can also fall in the range between 0.5 mbar and 1 mbar. In particular, the process chamber pressure can be less than 1 mbar or 0.5 mbar. In order to prevent the substrate from being lifted due to the higher pressure in the intermediate region, a holding member is provided. Such a holding member may act mechanically, for example, a mask may rest on the substrate, the weight of which provides the force. However, it is also possible to use a magnetic or electrostatic force to hold the substrate. However, as an alternative to the respective structural elements, eg directly applied (eg glued) to the surface of the substrate holder, especially the metal surface, the substrate holder can also consist of one or several bodies with several projections, which bodies are applied on the on the top side of the substrate holder. In particular, the following solution is used: such a body is a pad with a projection facing away from the top side. These protrusions are elastically deformable, eg bendable and/or compressible. However, the following solutions can also be adopted: the substrate support is composed of one or more foams or bodies that can be compressed in other ways. Such a main body has two surfaces facing away from each other, which can be in close contact with the surface of the top side of the substrate holder or the surface of the back side of the substrate. The body may be an open cell foam. Glass, silicon, but also aluminium oxide or aluminium, copper, titanium or another metal are used as substrates. The substrate can also be plastic, polyamide, especially transparent plastic. The substrate may have a planar extension in excess of 0.15 m 2 . The substrate can also be larger than 1 m 2 or larger than 2 m 2 . The structural elements can also be fibers or thin posts that can be bent. Such structural elements protrude from the top side of the substrate holder like fluff or bristles. A structural element with such flexibility is capable of bending under force to carry the substrate by its sidewalls. The height of these structural elements is preferably only slightly greater than the maximum unevenness of the backside of the substrate. However, the height of the structural elements can also be greater. The height of the structural elements may be greater than 5 μm, greater than 10 μm, greater than 50 μm, greater than 100 μm or greater than 1 mm. However, the height of structural elements should be less than 5 mm. According to a preferred technical solution, the height of the structural elements is between 50 μm and 1 mm. The height is preferably about 50 μm to 100 μm. The lateral extension of the structural element may be less than its height. In particular, when the structural elements are constructed as columns or fibers, such as fluff or bristles, the circle-equivalent diameter of their cross-section is at most one tenth of their height. Typical lateral dimensions of structural elements are less than 5 cm or less than 1 mm. However, the horizontal dimension can also be larger than 5 cm. The structural element may have a length of, for example, greater than 0.2 mm, greater than 0.5 mm, greater than 1 mm, greater than 2 mm or greater than 5 mm. In particular, the following scheme is used: the maximum length of the structural elements is 20 mm. The area occupied by the structural elements may be less than 50 mm 2 . The width of the structural elements can be greater than 5 mm or less than 1 mm. These structural elements may also have cavities. These structural elements can in particular be constructed as mats. This structural element has an elastic wrap. A gas can be fed into the volume enclosed by the wrap, the gas imparting elasticity to the cushion. The gas fed into the volume can also be a tempering gas, which imparts thermal conductivity to the mat. The following approach may be employed: The tempering gas is allowed to flow through the mat during the treatment process. In this case, the volume has incoming and outgoing lines. However, a tempering liquid can also be fed into the volume. The following scheme can also be used: The volume is closed. The pad can also be a gel pad with a thermally conductive gel in its volume. The following scheme can be used: the substrate is on a single pad, eg a gel pad. In this case, the substrate holder consists of a gel pad. However, the following solution can also be used: the substrate holder is composed of several pads, especially gel pads. In particular, it is possible to use the solution that the top side of the substrate holder is completely, ie 100 percent, provided with the substrate holder, and in particular with the structural elements formed by the substrate holder. However, it is also possible to use the following scheme: at least 90%, 10%, 3% or 1% of the part is provided with structural elements.

饋送入墊子之該容積的調溫氣體或饋送入位於結構元件之間之該空間的調溫氣體較佳具有高導熱性,以至於主導基板與基板架之間之熱輸運。藉由本發明之結構元件能夠實現:並非透過基板之背側表面與結構元件的接觸面來進行大部分的熱輸運,而是大致透過將空間填充的調溫氣體來進行熱輸運。故可採用以下方案:該等結構元件以及該調溫氣體具有特定的導熱特性,使得透過調溫氣體流動的熱流大於流經所有結構元件的總熱流。該等結構元件之橫截面與該等空間之橫截面較佳具有一定比例,使得所有結構元件之橫截面總和遠小於所有空間之橫截面總和。The tempering gas fed into the volume of the mat or into the space between the structural elements preferably has a high thermal conductivity so as to dominate the heat transport between the substrate and the substrate holder. With the structural element of the present invention, it is possible to realize that most of the heat transport is not carried out through the contact surface between the backside surface of the substrate and the structural element, but substantially through the temperature-adjusting gas that fills the space. Therefore, the following solution can be adopted: the structural elements and the temperature-adjusting gas have specific thermal conductivity properties, so that the heat flow through the temperature-adjusting gas is greater than the total heat flow through all the structural elements. The cross-sections of the structural elements are preferably proportional to the cross-sections of the spaces such that the sum of the cross-sections of all the structural elements is much smaller than the sum of the cross-sections of all the spaces.

圖1顯示先前技術中眾所周知的OVPD反應器。此OVPD反應器具有相對外界氣密的殼體1。在殼體1中設有氣體入口構件3,其具有蓮蓬頭之形狀。氣體入口構件3具有大致呈矩形的基本輪廓,並且在面向製程室5的排氣面上具有數個排氣口3'。可透過氣體輸送管線4將有機起始材料之蒸汽饋送入氣體入口構件3之容積。藉由載氣進行此操作。預先在未顯示之蒸發器中產生該蒸汽,具體方式例如為:在該蒸發器中透過供熱將作為氣膠送至蒸發器的有機粉末轉化成蒸汽形式。氣體入口構件3之排氣面係經加熱。將該排氣面加熱至一高於蒸汽之冷凝溫度的溫度。Figure 1 shows an OVPD reactor well known in the prior art. This OVPD reactor has a casing 1 which is airtight with respect to the outside. In the housing 1 there is provided a gas inlet member 3 which has the shape of a shower head. The gas inlet member 3 has a substantially rectangular basic profile and has several exhaust ports 3 ′ on the exhaust surface facing the process chamber 5 . The vapor of the organic starting material can be fed into the volume of the gas inlet member 3 through the gas delivery line 4 . This is done with carrier gas. The steam is generated in advance in an evaporator, not shown, by, for example, converting the organic powder sent to the evaporator as an aerosol into the form of steam by supplying heat in the evaporator. The exhaust side of the gas inlet member 3 is heated. The exhaust surface is heated to a temperature above the condensation temperature of the steam.

製程室5之底部由基板架2之頂側2'構成。基板架2大致由一冷卻體構成。該冷卻體具有冷卻裝置6,其可為冷卻通道,一液態冷卻介質能夠穿過該等冷卻通道流動。在基板架2之頂側2'上設有待塗佈之基板。該基板具有前側9,其面向製程室5,以及,透過使蒸汽在前側9上冷凝,藉由有機蒸汽對該前側進行塗佈。為此,需要自基板7提取熱。此舉藉由基板架2實現。The bottom of the process chamber 5 is formed by the top side 2 ′ of the substrate rack 2 . The substrate holder 2 is generally constituted by a cooling body. The cooling body has cooling means 6, which can be cooling channels through which a liquid cooling medium can flow. The substrate to be coated is arranged on the top side 2 ′ of the substrate holder 2 . The substrate has a front side 9 which faces the process chamber 5 and which is coated with organic vapor by condensing the vapor on the front side 9 . For this, heat needs to be extracted from the substrate 7 . This is achieved by the substrate holder 2 .

根據本發明,在基板7之背側8與基板架2之頂側2'之間設有在圖2中用元件符號10表示的基板支架。結合圖3對基板支架10的根據本發明的作用進行說明,該圖顯示對應於圖1的裝置,其中基板7之背側8直接貼靠在基板架2之頂側2'上。背側8大致在一平面中延伸。但其具有不平度,例如拱起部8'。此等不平度導致該背側與同樣非理想平面的頂側2'僅點式接觸。僅在接觸點上透過固體接觸進行自基板7至基板架2的熱輸運。在中間區域內,大致透過藉由位於空間中之氣體進行的熱傳導,來實現自基板至基板架2的熱輸運。According to the invention, between the back side 8 of the substrate 7 and the top side 2 ′ of the substrate holder 2 , a substrate holder, indicated by the reference numeral 10 in FIG. 2 , is provided. The function according to the invention of the substrate holder 10 will be explained with reference to FIG. 3 , which shows a device corresponding to FIG. 1 in which the back side 8 of the substrate 7 rests directly on the top side 2 ′ of the substrate holder 2 . The back side 8 extends approximately in a plane. However, it has unevenness, such as the dome 8'. These unevennesses result in only point contact of the backside with the also non-ideally planar topside 2'. The heat transport from the substrate 7 to the substrate holder 2 takes place by solid contact only at the contact points. In the intermediate region, the heat transport from the substrate to the substrate holder 2 is effected substantially by heat conduction by means of the gas located in the space.

不同於如圖3所示的先前技術中的情形,根據本發明,在基板7之背側8與頂側2'之間設有形式為基板支架10的彈性介質。藉由此彈性介質對不平度8'進行補償。此舉使得自基板7至基板架2的熱輸運均勻化。Unlike the situation in the prior art as shown in FIG. 3 , according to the invention an elastic medium in the form of a substrate holder 10 is provided between the back side 8 and the top side 2 ′ of the substrate 7 . The unevenness 8' is compensated for by this elastic medium. This homogenizes the heat transport from the substrate 7 to the substrate rack 2 .

元件符號30表示保持構件,例如靜電或電磁保持構件,藉由該等保持構件向基板7施力,該力沿頂側2'之表面法線方向起作用,並且朝向基板架2對基板7施力,使得基板支架10發生變形。在其他實施例中,保持構件30亦具有以下功能:以抵抗在基板7下方饋送入腔室之調溫氣體的壓力的方式將基板7保持。元件符號31表示例如由金屬構成之遮罩,其貼靠在基板上,從而對基板進行結構化。僅在圖1中顯示遮罩31。此外,遮罩31提供質量,藉由該質量朝向頂側2'對基板施力,從而實現致使基板支架10變形的重力,但其亦以抵抗饋送入位於頂側2'與背側8之間之空間之調溫氣體之壓力的方式將基板7保持。Reference numeral 30 denotes holding members, such as electrostatic or electromagnetic holding members, by means of which a force is applied to the substrate 7 , which force acts in the direction of the surface normal of the top side 2 ′ and is applied to the substrate 7 towards the substrate holder 2 force, so that the substrate holder 10 is deformed. In other embodiments, the holding member 30 also has the function of holding the substrate 7 against the pressure of the tempering gas fed into the chamber under the substrate 7 . Reference numeral 31 designates a mask, for example made of metal, which rests on the substrate in order to structure the substrate. Only the mask 31 is shown in FIG. 1 . Furthermore, the mask 31 provides the mass by means of which the substrate is forced towards the top side 2 ′, thereby realizing the gravitational force causing the deformation of the substrate holder 10 , but it is also located between the top side 2 ′ and the back side 8 against feeding The substrate 7 is maintained by the pressure of the temperature-adjusting gas in the space.

圖4、圖5及圖6顯示本發明之第一實施例,其中,僅沿基板架之頂側2'之被基板7遮蓋的區域的邊緣設有結構元件11。該等結構元件可為長條形的彈性體,其例如由塑膠構成,但亦可由金屬或另一適合的材料構成。結構元件11係如此沿該邊緣佈置,使得在相鄰之結構元件11之間留有空間20。結構元件11係以留有間隙的方式相互錯開佈置,從而相對被結構元件11包圍之內腔形成一迷宮式密封裝置。若基板7貼靠在結構元件上,則在背側8與頂側2'之間形成一空腔17。可將一調溫氣體饋送入此空腔17。為此設有氣體輸送管線16,其與頂側2'連通。該調溫氣體引起自基板7至基板架2的熱傳導。背側8與頂側2'的距離可落在介於5 μm與1 mm之間的範圍內。Figures 4, 5 and 6 show a first embodiment of the present invention, wherein the structural elements 11 are provided only along the edges of the area covered by the substrate 7 of the top side 2' of the substrate holder. The structural elements can be elongated elastomers, for example, made of plastic, but also of metal or another suitable material. The structural elements 11 are arranged along the edge such that a space 20 is left between adjacent structural elements 11 . The structural elements 11 are staggered with respect to each other with a gap, so as to form a labyrinth seal with respect to the inner cavity surrounded by the structural elements 11 . When the base plate 7 rests on the structural element, a cavity 17 is formed between the rear side 8 and the top side 2 ′. A tempered gas can be fed into this cavity 17 . For this purpose, a gas feed line 16 is provided, which communicates with the top side 2'. The tempering gas causes heat conduction from the substrate 7 to the substrate holder 2 . The distance between the backside 8 and the topside 2' may fall in the range between 5 μm and 1 mm.

在一未顯示的實施例中,該等長條形結構元件11(其長度至多可為5 cm且其寬度至多可為1 mm)可以在整個頂側2'之範圍內以均勻分佈的方式佈置。各結構元件11之間的空間可與氣體輸送管線16連通。為了抵抗較環境壓力更高之調溫氣體壓力將基板保持,可使用前述保持構件30。調溫氣體之過壓可為0.5 mbar至1 mbar。In an embodiment not shown, the elongated structural elements 11 (whose length may be at most 5 cm and whose width may be at most 1 mm) may be arranged in a uniformly distributed manner over the entire top side 2' . The spaces between the structural elements 11 may communicate with the gas delivery line 16 . In order to hold the substrate against the temperature-conditioning gas pressure higher than the ambient pressure, the aforementioned holding member 30 can be used. The overpressure of the tempering gas can be from 0.5 mbar to 1 mbar.

在如圖7所示之第二實施例中,結構元件11具有大致呈正方形的基本輪廓,並且至少在基板架2之頂側2'之被基板7遮蓋的區域內均勻地佈置。結構元件11係以規則的佈局在頂側2'之範圍內均勻分佈。但其亦可不規則地分佈。但其亦可不規則地且統計均勻地在頂側2'之範圍內分佈。其基本輪廓亦可為圓形、橢圓形或矩形。該輪廓亦可任意地延伸。In the second embodiment shown in FIG. 7 , the structural elements 11 have a substantially square basic contour and are arranged uniformly at least in the area of the top side 2 ′ of the substrate holder 2 covered by the substrate 7 . The structural elements 11 are uniformly distributed within the area of the top side 2' in a regular arrangement. However, it can also be distributed irregularly. However, it can also be distributed irregularly and statistically uniformly over the area of the top side 2'. Its basic outline can also be circular, oval or rectangular. The contour can also extend arbitrarily.

如圖8所示之第三實施例顯示氣體輸送管線16,其直接與中央自由面之邊緣連通,該自由面係由採用多行佈局的結構元件11界定。結構元件11在此具有相互平行延伸之側壁21、22,並且具有寬度B,其落在介於1 mm與5 mm之間的範圍內。該等結構元件具有長度L,其落在介於1 mm與50 mm之間的範圍內。兩個相鄰之結構元件11之間的距離A可等於高度H之尺寸。但距離A亦可大於或小於高度H。基板7之背側8所支撐於的支承面23的尺寸可小於50 mm2 。在此,結構元件11可由彈性固體構成,該等彈性固體係用橡膠、塑膠或另一彈性材料製成。結構元件之容積完全被該材料填滿。The third embodiment shown in FIG. 8 shows a gas delivery line 16 which communicates directly with the edge of the central free surface, which is delimited by structural elements 11 in a multi-row layout. The structural element 11 here has side walls 21 , 22 extending parallel to each other and has a width B which lies in the range between 1 mm and 5 mm. The structural elements have a length L, which falls in the range between 1 mm and 50 mm. The distance A between two adjacent structural elements 11 may be equal to the size of the height H. However, the distance A can also be larger or smaller than the height H. The dimensions of the support surface 23 on which the back side 8 of the base plate 7 is supported may be less than 50 mm 2 . Here, the structural element 11 may be composed of elastic solids, which are made of rubber, plastic or another elastic material. The volume of the structural element is completely filled with the material.

圖9顯示本發明之第四實施例,其中,結構元件12具有腔室19。結構元件12係建構為墊子,並且具有可撓性的包裹物18。包裹物18形成側壁21、22及支承面23。在本實施例中,墊子12係朝向頂側2'敞開。該包裹物係以邊緣例如透過黏合連接與頂側2'連接。包裹物18之容積19與一氣體輸送管線16連通,用以將調溫氣體饋送入該包裹物。在一未顯示的實施例中,結構元件12之腔室19不僅與氣體輸送管線16連通,亦與排氣管線連通,故調溫氣體能夠穿過腔室19流動。寬度B、高度H以及相鄰之結構元件12之距離可具有上述值。結構元件12亦可如圖5至圖8所示的那般佈置及/或建構。亦可在頂側2'之範圍內延伸的墊子12之包裹物可由塑膠、橡膠或薄金屬箔構成。FIG. 9 shows a fourth embodiment of the present invention, wherein the structural element 12 has a cavity 19 . The structural element 12 is constructed as a cushion and has a flexible wrap 18 . Wrap 18 forms side walls 21 , 22 and support surface 23 . In this embodiment, the cushion 12 is open towards the top side 2'. The wrapping is connected to the top side 2' with an edge, eg by an adhesive connection. The volume 19 of the wrap 18 is in communication with a gas delivery line 16 for feeding tempering gas into the wrap. In a not shown embodiment, the chamber 19 of the structural element 12 communicates not only with the gas supply line 16 but also with the exhaust line, so that the temperature-adjusting gas can flow through the chamber 19 . The width B, the height H, and the distance between the adjacent structural elements 12 may have the above-mentioned values. The structural elements 12 may also be arranged and/or constructed as shown in FIGS. 5-8 . The wrapping of the cushion 12, which also extends within the range of the top side 2', may consist of plastic, rubber or thin metal foil.

圖10及圖11顯示本發明之第五實施例,其中,結構元件15具有經底切之側壁21、22。用於將結構元件15固定於頂側2'上的面24小於支承面23,基板7以其背側8貼靠在該支承面上。結構元件15可建構為肋部,其長度大於寬度。結構元件15之寬度可小於結構元件15之高度。特別是採用以下方案:底腳區域24之寬度小於結構元件15之高度。Figures 10 and 11 show a fifth embodiment of the present invention, wherein the structural element 15 has undercut side walls 21, 22. The surface 24 for fixing the structural element 15 on the top side 2 ′ is smaller than the bearing surface 23 on which the base plate 7 rests with its rear side 8 . The structural elements 15 can be constructed as ribs, the length of which is greater than the width. The width of the structural element 15 may be smaller than the height of the structural element 15 . In particular, the following solution is adopted: the width of the foot region 24 is smaller than the height of the structural element 15 .

如圖11所示之結構元件15a、15b、15c、15d、15e以及15f具有不平行於頂側2'延伸的支承面23。結構元件15a至15f能夠基於其彈性而傾斜,故支承面23能夠以面接觸的方式緊貼至背側8上。此外,結構元件15亦可具備可壓縮特性。結構元件15以彈性方式變形,故在將基板7取下後,該等結構元件能夠重新恢復原始形狀。The structural elements 15a, 15b, 15c, 15d, 15e and 15f shown in Fig. 11 have bearing surfaces 23 that do not extend parallel to the top side 2'. The structural elements 15a to 15f can be tilted due to their elasticity, so that the support surface 23 can be in surface contact with the rear side 8 . In addition, the structural element 15 may also have compressible properties. The structural elements 15 are elastically deformed so that they can resume their original shape after the substrate 7 is removed.

如圖12及圖13所示之第六實施例顯示紗線、柱、刷毛或絨毛形式的結構元件13。結構元件13具有長條形造型。其直徑小於其長度。結構元件之定義高度H的長度較佳至少為結構元件13之橫截面之圓當量直徑的十倍。結構元件13較佳在其整個長度延伸範圍內具有不變的橫截面。類似於如圖11所示之結構元件,刷毛或絨毛狀結構元件13能夠彎曲。以抵抗彈性復位力的方式進行彎曲。圖12顯示處於未經施力狀態下的結構元件13,其中,該等結構元件大致平行於頂側2'之表面法線直線延伸。若將基板7鋪設至此等紗線狀結構元件13上,則結構元件13如彈簧桿那般作出回應並彎曲,致使結構元件13與自由端鄰接的表面區域緊貼至底側8上。The sixth embodiment shown in Figures 12 and 13 shows structural elements 13 in the form of yarns, posts, bristles or fluff. The structural element 13 has an elongated shape. Its diameter is smaller than its length. The length of the defined height H of the structural element is preferably at least ten times the equivalent circle diameter of the cross-section of the structural element 13 . The structural element 13 preferably has a constant cross-section over its entire length extension. Similar to the structural elements shown in Figure 11, the bristle or fluff-like structural elements 13 can be bent. Bend in a way that resists elastic restoring forces. FIG. 12 shows the structural elements 13 in an unforced state, wherein the structural elements extend in a straight line substantially parallel to the surface normal of the top side 2 ′. If the base plate 7 is laid on these yarn-like structural elements 13 , the structural elements 13 respond like spring bars and bend, so that the surface area of the structural elements 13 adjoining the free end rests on the bottom side 8 .

在未顯示之實施例中,柱狀結構元件13亦可自一開始、即在未經基板7施力的狀態下便具有相對頂側2'之表面法線的傾斜度。據此,結構元件13可為相對該等表面法線傾斜延伸的桿部。此等桿部可相互平行延伸。但其亦可互成一定角度,例如成對地呈V狀。該等桿部可透過黏合劑與頂側2'連接。但其亦可自與頂側2'連接的固定箔伸出。亦可採用以下方案:此等結構元件13在頂側2'之整個延伸面的範圍內延伸。但結構元件13亦可僅在承載基板7的區域的邊緣範圍內延伸。In an embodiment not shown, the columnar structural elements 13 may also have an inclination relative to the surface normal of the top side 2 ′ from the beginning, ie, without applying force from the substrate 7 . Accordingly, the structural elements 13 may be rods extending obliquely with respect to the surface normals. The rods may extend parallel to each other. However, they can also be angled to each other, for example in pairs in the shape of a V. The rods can be connected to the top side 2' by means of an adhesive. However, it can also protrude from a fixing foil connected to the top side 2'. The following solution is also possible: the structural elements 13 extend over the entire extension of the top side 2'. However, the structural elements 13 can also extend only in the region of the edge of the carrier substrate 7 .

前述結構元件11、13、15係直接且相互間隔一定距離地固定在頂側2'上,而如圖14所示之第七實施例則揭示一變體方案。該等結構元件亦可自基箔伸出。據此,該等結構元件可作為突出部14自基箔伸出,並且一體式地與基箔連接。The aforementioned structural elements 11 , 13 , 15 are fixed directly and at a distance from each other on the top side 2 ′, while the seventh embodiment shown in FIG. 14 discloses a variant. These structural elements can also protrude from the base foil. Accordingly, these structural elements can protrude from the base foil as projections 14 and be connected in one piece with the base foil.

在如圖14所示之實施例中,結構元件14由塊狀突出部構成,其尺寸對應前述結構元件。一體式構成突出部14的襯墊25之底側係以適當的方式與頂側2'在其整個面的範圍內連接,例如黏合。亦可採用靜電連接。兩個突出部14之間的空間20可與氣體輸送管線16連通,用以將調溫氣體饋送入空間20。In the embodiment shown in FIG. 14 , the structural element 14 is constituted by a block-shaped protrusion, the size of which corresponds to the aforementioned structural element. The underside of the pad 25, which integrally forms the projection 14, is connected, for example glued, to the top side 2' in a suitable manner over its entire surface. Electrostatic connections can also be used. The space 20 between the two protrusions 14 can be in communication with the gas delivery line 16 for feeding the temperature-regulated gas into the space 20 .

在前述實施例中,透過相互間隔一定距離之結構元件11、13、14、15之支承面23對基板7之背側8點式施力。結構元件11、13、14、15特別是亦在拱起區域8'處對背側8施力,從而亦在該處產生用於熱傳導的固體接觸。在位於結構元件11、13、14、15之間的空間20中,藉由透過氣體進行的熱傳導來進行熱輸運,該氣體可透過氣體輸送管線16饋送或處於製程室中。In the aforementioned embodiment, the backside of the substrate 7 is subjected to 8-point force through the supporting surfaces 23 of the structural elements 11 , 13 , 14 , 15 which are spaced apart from each other. The structural elements 11 , 13 , 14 , 15 exert force on the back side 8 , in particular also in the arched region 8 ′, so that a solid contact for heat conduction is also produced there. In the space 20 between the structural elements 11 , 13 , 14 , 15 , heat transport takes place by heat conduction through the gas, which can be fed through the gas delivery line 16 or in the process chamber.

在本發明之如圖15所示之第八實施例中,基板支架10之連續表面貼靠在背側8上,並且特別是貼靠在拱起區域8'上。基板支架10在此由發泡體26、特別是由開放氣室式發泡體26構成。發泡體26可由彈性材料,例如橡膠或塑膠構成。該發泡體亦可由與前述結構元件11、13、14、15相同的材料構成,例如由PET或由PE構成。但不同之處在於:發泡體26具有空腔,其較佳地是相對周圍環境開放,以便進行氣體交換。In an eighth embodiment of the invention, shown in FIG. 15 , the continuous surface of the substrate carrier 10 rests on the back side 8 , and in particular on the arched area 8 ′. The substrate holder 10 here consists of a foam 26 , in particular an open-cell foam 26 . The foam body 26 may be composed of an elastic material such as rubber or plastic. The foam can also consist of the same material as the aforementioned structural elements 11 , 13 , 14 , 15 , for example PET or PE. The difference is, however, that the foam 26 has a cavity, which is preferably open to the surrounding environment for gas exchange.

在本發明之如圖16所示之第九實施例中,基板支架10之連續表面同樣貼靠在基板7之背側8上,並且特別是平面式貼靠在拱起區域8'之表面上。基板支架10在此由凝膠體27構成,該凝膠體大致為墊子。由諸如塑膠或橡膠或金屬箔的可撓性材料構成的包裹物28將空腔包圍,該空腔係經凝膠29填充。In the ninth embodiment of the invention, shown in FIG. 16 , the continuous surface of the base plate holder 10 likewise rests on the back side 8 of the base plate 7 and, in particular, rests flatly on the surface of the arched region 8 ′ . The substrate holder 10 here consists of a gel body 27 which is approximately a cushion. A wrap 28 composed of a flexible material such as plastic or rubber or metal foil surrounds the cavity, which is filled with gel 29 .

前述實施方案係用於說明本申請整體所包含之發明,該等發明至少透過以下特徵組合分別獨立構成相對於先前技術之改良方案,其中,此等特徵組合中的兩項、數項或其全部亦可相互組合,即:The foregoing embodiments are used to illustrate the inventions contained in the present application as a whole, and these inventions independently constitute improvements over the prior art through at least the following feature combinations, wherein two, several or all of these feature combinations Can also be combined with each other, namely:

一種基板架,其特徵在於設於頂側2'上之可彈性變形的基板支架10,其因彈性變形而與背側8、8'之表面接觸式抵靠。A substrate holder is characterized by an elastically deformable substrate holder 10 disposed on the top side 2', which abuts against the surfaces of the back sides 8, 8' due to elastic deformation.

一種基板架,其特徵在於:基板支架10具有結構元件11、12、13、14、15,以及/或者,基板支架10所構成之結構元件11、12、13、14、15僅佈置在頂側2'之被基板7遮蓋之區域之邊緣上,以及/或者,基板支架10所構成之結構元件11、12、13、14、15規則地並且以均勻的排列分佈在頂側2'之範圍內,使得結構元件11、12、13、14、15大致均勻貼靠在基板7之整個背側8、8'上,以及/或者,結構元件11至15由塑膠、PET、PE或由金屬、金屬線或薄金屬箔構成,以及/或者,基板支架10為在頂側2'之整個被基板7遮蓋之面的範圍內延伸的一體式或分體式主體25、27,以及/或者,基板支架10係由形成突出部14的襯墊25或由發泡體26構成。A substrate holder, characterized in that the substrate holder 10 has structural elements 11, 12, 13, 14, 15, and/or the structural elements 11, 12, 13, 14, 15 formed by the substrate holder 10 are arranged only on the top side 2' on the edge of the area covered by the substrate 7 and/or the structural elements 11, 12, 13, 14, 15 formed by the substrate holder 10 are distributed regularly and in a uniform arrangement within the area of the top side 2' , so that the structural elements 11 , 12 , 13 , 14 , 15 are substantially evenly attached to the entire backside 8 , 8 ′ of the substrate 7 , and/or the structural elements 11 to 15 are made of plastic, PET, PE or made of metal, metal wire or thin metal foil, and/or the substrate holder 10 is a one-piece or separate body 25, 27 extending over the entire surface of the top side 2' covered by the substrate 7, and/or the substrate holder 10 It consists of a gasket 25 forming the protrusion 14 or a foam body 26 .

一種基板架,其特徵在於:結構元件11、12、13、14、15係相互間隔一定距離,以及/或者,調溫氣體能夠穿過設於結構元件11、12、13、14、15之間的空間20,以及/或者,結構元件11、12、13、14、15之間的至少一個空間20或者頂側2'之經結構元件11、12、13、14、15包圍的區域與至少一個氣體管線16連通,以及/或者,結構元件11、12、13、14、15係建構為柱、纖維13或隔片14、15,其因彈性及/或因其橫截面及其沿基板支承面之表面法線測得的高度H而能夠彎曲,以及/或者,結構元件具有大於0.2 mm、大於0.5 mm、大於1 mm、大於2 mm、大於5 mm並且小於20 mm的長度L,以及/或者,結構元件11、12、13、14、15之長度L落在介於0.5 mm與2 mm之間的範圍內。A substrate frame is characterized in that: the structural elements 11, 12, 13, 14, and 15 are spaced apart from each other by a certain distance, and/or the temperature-adjusting gas can pass through between the structural elements 11, 12, 13, 14, and 15. space 20, and/or, at least one space 20 between the structural elements 11, 12, 13, 14, 15 or the area of the top side 2' surrounded by the structural elements 11, 12, 13, 14, 15 and at least one The gas line 16 communicates and/or the structural elements 11, 12, 13, 14, 15 are constructed as posts, fibers 13 or spacers 14, 15, which are due to elasticity and/or due to their cross-section and their bearing surfaces along the substrate can be bent at a height H measured from the surface normal, and/or the structural element has a length L greater than 0.2 mm, greater than 0.5 mm, greater than 1 mm, greater than 2 mm, greater than 5 mm and less than 20 mm, and/or , the length L of the structural elements 11, 12, 13, 14, 15 falls within the range between 0.5 mm and 2 mm.

一種基板架,其特徵在於:至少一部分、較佳所有結構元件11、12、13、14、15皆建構為墊子12,其中,墊子12具有包裹物18、28,其限定一容積19、27,該容積係經液態或氣態介質填充,以及/或者,液態或氣態介質能夠流入該容積,以及/或者,該容積可被液態或氣態介質流過。A substrate rack, characterized in that at least a part, preferably all of the structural elements 11, 12, 13, 14, 15 are constructed as a cushion 12, wherein the cushion 12 has wraps 18, 28, which define a volume 19, 27, The volume is filled with a liquid or gaseous medium and/or a liquid or gaseous medium can flow into the volume and/or the volume can be flowed through by a liquid or gaseous medium.

一種基板架,其特徵在於:設有保持構件30,藉由該等保持構件以機械、靜電、氣動及/或磁方式將基板7保持在基板架2上,以及/或者,為了保持基板7,使用至少貼靠在基板7之邊緣上的遮罩31,以及/或者,基板架2為冷卻體,其中,設有冷卻裝置6,其將自基板7導出之熱運走。A substrate holder, characterized in that: there are holding members 30 by which the substrate 7 is mechanically, electrostatically, pneumatically and/or magnetically held on the substrate holder 2, and/or, in order to hold the substrate 7, A shield 31 is used which rests on at least the edge of the substrate 7 and/or the substrate holder 2 is a cooling body, wherein a cooling device 6 is provided which removes the heat dissipated from the substrate 7 .

一種基板架,其特徵在於:結構元件11、12、13、14、15之沿頂側2'之表面法線方向測得的高度H大於5 μm、大於10 μm、大於50 μm、大於100 μm、大於1 mm、但小於5 mm,以及/或者,結構元件11、12、13、14、15之高度H介於50 μm與1 mm之間。A substrate frame is characterized in that: the height H of the structural elements 11, 12, 13, 14, 15 measured along the surface normal direction of the top side 2' is greater than 5 μm, greater than 10 μm, greater than 50 μm, greater than 100 μm , greater than 1 mm, but less than 5 mm, and/or the height H of the structural elements 11, 12, 13, 14, 15 is between 50 μm and 1 mm.

一種基板架,其特徵在於,結構元件11、12、13、14、15具有沿頂側2'之面延伸方向測得的長度L或寬度B,其大於50 mm、小於5 mm或小於1 mm,以及/或者,結構元件11、12、13、14、15之在頂側2'之面延伸中測得之面積小於50 mm2 ,以及/或者,結構元件15之至少一個沿頂側2'之表面法線方向延伸的側壁21、22係經底切,以及/或者,結構元件15之在與頂側2'鄰接之底腳區域24中的橫截面小於貼靠於基板7之背側8上之頭部區域23的橫截面。A substrate holder, characterized in that the structural elements 11, 12, 13, 14, 15 have a length L or a width B measured along the surface extension direction of the top side 2', which is greater than 50 mm, less than 5 mm or less than 1 mm , and/or the area of the structural elements 11 , 12 , 13 , 14 , 15 measured in the surface extension of the top side 2 ′ is less than 50 mm 2 , and/or, at least one of the structural elements 15 along the top side 2 ′ The side walls 21 , 22 extending in the direction of the surface normal are undercut and/or the cross-section of the structural element 15 in the foot region 24 adjoining the top side 2 ′ is smaller than the back side 8 abutting the substrate 7 A cross-section of the head region 23 above.

一種基板處理製程,其特徵在於:使用根據前述請求項中任一項建構的基板架2。A substrate processing process is characterized by using the substrate rack 2 constructed according to any one of the preceding claims.

一種基板處理製程,其特徵在於:將一調溫氣體饋送入位於結構元件11、12、13、14、15之間的空間20,以及/或者,將一氣態或液態介質饋送入建構為墊子之結構元件11、12、13、14、15的容積19、27,以及/或者,饋送入墊子之容積19、27或空間20的調溫氣體的壓力高於製程室5中基板7之前側9上方的氣壓。A substrate processing process, characterized in that a temperature-adjusting gas is fed into the space 20 located between the structural elements 11, 12, 13, 14, 15, and/or a gaseous or liquid medium is fed into a space constructed as a cushion The volume 19 , 27 of the structural elements 11 , 12 , 13 , 14 , 15 , and/or the pressure of the tempering gas fed into the volume 19 , 27 of the pad or the space 20 is higher than above the front side 9 of the substrate 7 in the process chamber 5 air pressure.

一種基板處理製程,其特徵在於:該饋送入空間20或饋送入墊子12、27之容積的氣體為氮氣、氬氣、氖氣、氪氣、氙氣、氫氣或氦氣或者至少90百分比由此等氣體中之一或數個構成,以及/或者,基板7由玻璃、矽、聚醯胺或塑膠構成且該處理製程為OVPD製程,以及/或者,基板7具有大於0.15 m2 、大於1 m2 或大於2 m2 的面。A substrate processing process, characterized in that: the gas fed into the space 20 or into the volume of the pads 12, 27 is nitrogen, argon, neon, krypton, xenon, hydrogen or helium or at least 90 percent of the same. One or several of the gases are composed, and/or the substrate 7 is composed of glass, silicon, polyamide or plastic and the processing process is an OVPD process, and/or the substrate 7 has a size greater than 0.15 m 2 , greater than 1 m 2 or faces larger than 2 m 2.

一種裝置,其特徵在於如請求項1至6中任一項的基板架2。An apparatus characterized by the substrate holder 2 according to any one of claims 1 to 6.

所有已揭露特徵(作為單項特徵或特徵組合)皆為發明本質所在。故本申請之揭露內容亦包含相關/所附優先權檔案(先申請案的副本)所揭露之全部內容,該等檔案所述特徵亦一併納入本申請之申請專利範圍。附屬項以其特徵對本發明針對先前技術之改良方案的特徵予以說明(即使不含相關請求項之特徵),其目的主要在於在該等請求項基礎上進行分案申請。每個請求項中所給出的發明可進一步具有前述說明中給出的、特別是以符號標示且/或在符號說明中給出的特徵中之一或數項。本發明亦有關於如下設計形式:前述說明中所提及之個別特徵不實現,特別是對於具體用途而言為非必需的或者可被技術上具有相同功效的其他構件所替代之特徵。All disclosed features (either as a single feature or as a combination of features) are essential to the invention. Therefore, the disclosure content of this application also includes all the content disclosed in the related/attached priority file (copy of the previous application), and the features described in these files are also included in the scope of the patent application of this application. The subordinate items describe the features of the improvement scheme of the present invention with respect to the prior art with its features (even if the features of the related claims are not included), and its purpose is mainly to file divisional applications on the basis of these claims. The invention given in each claim may further have one or more of the features given in the preceding description, in particular indicated by symbols and/or given in the description of symbols. The invention also relates to designs in which individual features mentioned in the preceding description are not implemented, in particular features which are not necessary for a specific application or which can be replaced by other technically equivalent components.

1:基板處理裝置,反應器 2:基板架 2':頂側 3:氣體入口構件 3':排氣口 4:氣體輸送管線 5:製程室 6:冷卻裝置 7:基板 8:背側 8':拱起區域 9:前側 10:基板支架 11:結構元件,彈性體 12:結構元件,墊子 13:結構元件,纖維,柱 14:結構元件,突出部 15:結構元件,肋部 15a:結構元件 15b:結構元件 15c:結構元件 15d:結構元件 15e:結構元件 15f:結構元件 16:氣體輸送管線 17:空腔 18:包裹物 19:容積 20:空間 21:側壁 22:側壁 23:支承面 24:底腳,底腳區域 25:襯墊 26:發泡體 27:容積,凝膠體 28:包裹物 29:凝膠 30:保持構件 31:遮罩 A:距離 B:寬度 H:高度 L:長度1: Substrate processing device, reactor 2: Substrate holder 2': top side 3: Gas inlet components 3': exhaust port 4: Gas delivery line 5: Process room 6: Cooling device 7: Substrate 8: back side 8': Arch area 9: Front side 10: Substrate bracket 11: Structural elements, elastomers 12: Structural elements, cushions 13: Structural elements, fibers, columns 14: Structural elements, protrusions 15: Structural elements, ribs 15a: Structural elements 15b: Structural elements 15c: Structural elements 15d: Structural elements 15e: Structural elements 15f: Structural elements 16: Gas delivery line 17: Cavity 18: Wrapping 19: Volume 20: Space 21: Sidewall 22: Sidewall 23: bearing surface 24: Foot, foot area 25: Padding 26: Foam 27: volume, gel 28: Wrapping 29: Gel 30: Keeping Components 31: Mask A: distance B: width H: height L: length

下面結合附圖對本發明之實施例進行詳細說明。其中: 圖1為基板處理裝置之示意性剖視圖, 圖2為圖1中之局部Ⅱ的放大圖, 圖3為對應於圖2的局部圖,但採用根據先前技術之配置, 圖4為根據圖1中之線Ⅳ-Ⅳ的剖視圖,形式為貼靠於基板架2上之基板7的俯視圖, 圖5為第一實施例之基板架2之類似於圖4的俯視圖,但基板7係被移除, 圖6為根據圖4中之線Ⅵ-Ⅵ的剖視圖, 圖7為第二實施例之對應於圖5的視圖, 圖8為第三實施例之包含結構元件11的基板架2之頂側2'的局部立體圖, 圖9為第四實施例之類似於圖6的剖視圖, 圖10為第五實施例之類似於圖8的立體圖, 圖11顯示第五實施例之不同結構元件15a至15f, 圖12為第六實施例之類似於圖9的視圖,其中結構元件13具有紗線、纖維或絨毛的形式, 圖13為對應於圖12的視圖,但顯示經結構元件13承載之基板7, 圖14為本發明之第七實施例之類似於圖9的視圖,其中結構元件14係由襯墊25之突出部構成, 圖15為第八實施例之類似於圖9的剖視圖,其中基板支架10係由發泡體26構成,以及 圖16為對應於圖15的視圖,其中基板支架10為凝膠體27,其中在包裹物28之容積中設有凝膠29。The embodiments of the present invention will be described in detail below with reference to the accompanying drawings. in: FIG. 1 is a schematic cross-sectional view of a substrate processing apparatus, Fig. 2 is an enlarged view of part II in Fig. 1, Fig. 3 is a partial view corresponding to Fig. 2, but with a configuration according to the prior art, FIG. 4 is a sectional view according to the line IV-IV in FIG. 1 in the form of a top view of the substrate 7 resting on the substrate holder 2, FIG. 5 is a top view similar to FIG. 4 of the substrate holder 2 of the first embodiment, but with the substrate 7 removed, Fig. 6 is a sectional view according to the line VI-VI in Fig. 4, Fig. 7 is a view corresponding to Fig. 5 of the second embodiment, FIG. 8 is a partial perspective view of the top side 2 ′ of the substrate frame 2 including the structural elements 11 according to the third embodiment, Fig. 9 is a sectional view similar to Fig. 6 of the fourth embodiment, Fig. 10 is a perspective view similar to Fig. 8 of the fifth embodiment, FIG. 11 shows different structural elements 15a to 15f of the fifth embodiment, Figure 12 is a view similar to Figure 9 of the sixth embodiment, wherein the structural elements 13 are in the form of yarns, fibers or fluff, Fig. 13 is a view corresponding to Fig. 12, but showing the substrate 7 carried by the structural element 13, FIG. 14 is a view similar to FIG. 9 of the seventh embodiment of the present invention, wherein the structural element 14 is formed by the protrusion of the pad 25, FIG. 15 is a cross-sectional view similar to FIG. 9 of the eighth embodiment, wherein the substrate holder 10 is formed of the foam body 26, and FIG. 16 is a view corresponding to FIG. 15 , wherein the substrate holder 10 is a gel body 27 with a gel 29 provided in the volume of the wrap 28 .

2:基板架 2: Substrate holder

2':頂側 2': top side

6:冷卻裝置 6: Cooling device

10:基板支架 10: Substrate bracket

11:結構元件,彈性體 11: Structural elements, elastomers

16:氣體輸送管線 16: Gas delivery line

20:空間 20: Space

21:側壁 21: Sidewall

22:側壁 22: Sidewall

23:支承面 23: bearing surface

24:底腳,底腳區域 24: Foot, foot area

A:距離 A: distance

B:寬度 B: width

H:高度 H: height

L:長度 L: length

Claims (18)

一種用於處理在可透過供熱或散熱來調溫之頂側(2')上之基板(7)的方法,其中,該基板(7)面向該頂側(2')的背側表面(8)具有至少一個不平的或自一平面拱起的區域(8'),以及,該背側表面(8)支撐在可彈性變形之多個結構元件(11,12,13,14,15)上,該等結構元件延伸出該頂側(2')、在該等結構元件之間設有多個空間(20)且該等結構元件接觸式貼靠在該背側表面(8)上,其特徵在於:可將一調溫氣體饋送入該等空間(20),該調溫氣體透過該等空間(20)在該頂側(2')與該背側表面(8)之間流動,並且在該背側表面(8)與該頂側(2')之間輸送熱。A method for processing a substrate (7) on a topside (2') that can be tempered by supplying or dissipating heat, wherein the substrate (7) faces the backside surface ( 8) having at least one uneven or arched area (8') from a plane, and the backside surface (8) is supported on elastically deformable structural elements (11, 12, 13, 14, 15) on the top side (2'), the structural elements extend out of the top side (2'), a plurality of spaces (20) are provided between the structural elements and the structural elements contact the backside surface (8), It is characterized in that: a temperature-adjusting gas can be fed into the spaces (20), and the temperature-adjusting gas flows between the top side (2') and the backside surface (8) through the spaces (20), And heat is transported between the backside surface (8) and the topside (2'). 如請求項1之方法,其中,饋送入該等空間(20)之氣體為氮氣、氬氣、氖氣、氪氣、氙氣、氫氣或氦氣,或者至少90%由該等氣體中之一者構成,以及/或者,饋送入該等空間(20)之該等氣體主導該背側表面(8)與該頂側(2')之間的熱輸運。The method of claim 1, wherein the gas fed into the spaces (20) is nitrogen, argon, neon, krypton, xenon, hydrogen or helium, or at least 90% by one of these gases Formed, and/or, the gases fed into the spaces (20) dominate the heat transport between the backside surface (8) and the topside (2'). 一種用於應用在基板處理裝置(1)中的基板架(2),用於實施在請求項1及2中所述之方法,具有可透過供熱或散熱來調溫之頂側(2'),自該頂側伸出可彈性變形之多個結構元件(11,12,13,14,15),在該等結構元件之間設有多個空間(20),且基板(7)能夠藉由其背側表面(8)支撐在該等結構元件上,其特徵在於:該等空間(20)與至少一個氣體管線(16)連通,藉由該氣體管線能夠將調溫氣體以穿過該等空間(20)流動的方式饋送入該等空間(20),從而在該背側表面(8)與該頂側(2')之間輸送熱。A substrate holder (2) for use in a substrate processing apparatus (1) for carrying out the method described in claims 1 and 2, having a top side (2' that can be temperature-regulated by supplying or dissipating heat) ), a plurality of elastically deformable structural elements (11, 12, 13, 14, 15) protrude from the top side, a plurality of spaces (20) are provided between the structural elements, and the base plate (7) can Supported on the structural elements by means of its backside surface (8), characterized in that the spaces (20) communicate with at least one gas line (16) through which the tempering gas can be passed through The spaces ( 20 ) are fed into the spaces ( 20 ) in a flowing manner, thereby transporting heat between the backside surface ( 8 ) and the top side ( 2 ′). 一種基板架(2),具有可透過供熱或散熱調溫之頂側(2'),在該頂側上設有可彈性變形之基板支架(10),其能夠因彈性變形而與基板(7)之不平的背側表面接觸式抵靠,其特徵在於:該基板支架(10)係由形成多個結構元件(14)的襯墊(25)或由發泡體(26)構成,其中,該等結構元件(14)為承載該基板的突出部,或者,該基板支架(10)係建構為墊子(12),其具有包裹物(18,28),該包裹物限定一容積(19,27),該容積係經液態或氣態介質填充,或者液態或氣態介質能夠流入該容積,以及/或者液態或氣態介質能夠穿過該容積流動。A substrate holder (2) having a top side (2') through which heat supply or heat dissipation can be regulated in temperature, and an elastically deformable substrate holder (10) is arranged on the top side, which can be connected to a substrate (10) due to elastic deformation. 7) The uneven backside surface contact abutment is characterized in that: the substrate support (10) is composed of a gasket (25) forming a plurality of structural elements (14) or a foam (26), wherein , the structural elements (14) are protrusions that carry the substrate, or the substrate holder (10) is constructed as a cushion (12) having a wrap (18, 28) that defines a volume (19) , 27), the volume is filled with a liquid or gaseous medium, or a liquid or gaseous medium can flow into the volume, and/or a liquid or gaseous medium can flow through the volume. 如請求項1之基板架,其中,該等結構元件(11,12,13,14,15)僅佈置在該頂側(2')之被該基板(7)遮蓋的區域的邊緣上。A substrate holder as claimed in claim 1, wherein the structural elements (11, 12, 13, 14, 15) are arranged only on the edges of the area of the top side (2') covered by the substrate (7). 如請求項1之基板架,其中,該基板支架(10)所構成之該等結構元件(11,12,13,14,15)係規則地並且以均勻的佈局分佈在該頂側(2')之範圍內,使得該等結構元件(11,12,13,14,15)大致均勻貼靠在該基板(7)之整個背側(8,8')上。The substrate holder of claim 1, wherein the structural elements (11, 12, 13, 14, 15) formed by the substrate holder (10) are regularly and uniformly distributed on the top side (2' ), so that the structural elements (11, 12, 13, 14, 15) are approximately evenly abutted on the entire backside (8, 8') of the substrate (7). 如請求項1之基板架,其中,該等結構元件(11至15)由塑膠、PET、PE構成,或由金屬、金屬線或薄金屬箔構成。The substrate holder of claim 1, wherein the structural elements (11 to 15) are made of plastic, PET, PE, or made of metal, metal wire or thin metal foil. 如請求項1之基板架,其中,該等結構元件(11,12,13,14,15)係建構為柱、纖維(13)或隔片(14,15),其能夠因彈性及/或因其橫截面及其沿基板支承面之表面法線方向測得之高度(H)而彎曲。The substrate rack of claim 1, wherein the structural elements (11, 12, 13, 14, 15) are constructed as posts, fibers (13) or spacers (14, 15), which can be Curved due to its cross-section and its height (H) measured along the surface normal of the substrate support surface. 如請求項1之基板架,其中,該等結構元件(11,12,13,14,15)具有一長度(L),其大於0.2 mm、大於0.5 mm、大於1 mm、大於2 mm、大於5 mm並且小於20 mm,以及/或者,該等結構元件(11,12,13,14,15)之長度(L)落在介於0.5 mm與2 mm之間的範圍內。The substrate rack of claim 1, wherein the structural elements (11, 12, 13, 14, 15) have a length (L) greater than 0.2 mm, greater than 0.5 mm, greater than 1 mm, greater than 2 mm, greater than 5 mm and less than 20 mm, and/or the length (L) of the structural elements (11, 12, 13, 14, 15) falls within the range between 0.5 mm and 2 mm. 如請求項1之基板架,其中,設有多個保持構件(30),藉由該等保持構件以機械、靜電、氣動及/或磁方式將該基板(7)保持在該基板架(2)上。The substrate rack of claim 1, wherein a plurality of holding members (30) are provided, by means of which the substrate (7) is mechanically, electrostatically, pneumatically and/or magnetically held on the substrate rack (2). )superior. 如請求項1之基板架,其中,為了將該基板(7)保持,使用至少貼靠在該基板(7)之邊緣上的遮罩(31)。A substrate holder as claimed in claim 1, wherein, in order to hold the substrate (7), a mask (31) is used which at least rests on the edge of the substrate (7). 如請求項1之基板架,其中,該基板架(2)為冷卻體,其中,設有冷卻裝置(6),將自該基板(7)導出之熱運走。The substrate rack according to claim 1, wherein the substrate rack (2) is a cooling body, wherein a cooling device (6) is provided to transport away the heat derived from the substrate (7). 如請求項1之基板架,其中,該等結構元件(11,12,13,14,15)沿頂側(2')之表面法線方向測得的高度(H)大於5 μm、大於10 μm、大於50 μm、大於100 μm、大於1 mm、但小於5 mm,以及/或者,該等結構元件(11,12,13,14,15)之高度(H)介於50 μm與1 mm之間。The substrate holder of claim 1, wherein the height (H) of the structural elements (11, 12, 13, 14, 15) measured along the surface normal direction of the top side (2') is greater than 5 μm, greater than 10 μm, greater than 50 μm, greater than 100 μm, greater than 1 mm, but less than 5 mm, and/or the height (H) of the structural elements (11, 12, 13, 14, 15) is between 50 μm and 1 mm between. 如請求項1之基板架,其中,該等結構元件(11,12,13,14,15)具有沿頂側(2')之面延伸方向測得的長度(L)或寬度(B),其大於50 mm、小於5 mm或小於1 mm,以及/或者,該等結構元件(11,12,13,14,15)在頂側(2')之面延伸中測得之面積小於50 mm2 ,以及/或者,該等結構元件(15)之至少一個沿頂側(2')之表面法線方向延伸的側壁(21, 22)係經底切,以及/或者,該等結構元件(15)在與頂側(2')鄰接之底腳區域(24)中的橫截面小於貼靠於該基板(7)之背側(8)上之頭部區域(23)的橫截面。A substrate holder as claimed in claim 1, wherein the structural elements (11, 12, 13, 14, 15) have a length (L) or a width (B) measured in the direction of extension of the face of the top side (2'), It is greater than 50 mm, less than 5 mm or less than 1 mm, and/or the area of these structural elements (11, 12, 13, 14, 15) measured in the face extension of the top side (2') is less than 50 mm 2 , and/or, at least one side wall (21, 22) of these structural elements (15) extending in the direction of the surface normal of the top side (2') is undercut, and/or, these structural elements ( 15) The cross section in the foot region (24) adjoining the top side (2') is smaller than the cross section of the head region (23) resting on the back side (8) of the base plate (7). 一種處理基板(7)的方法,其中透過供熱或散熱對基板架(2)之承載待處理基板(7)的頂側(2')進行調溫,使得在基板與基板架(2)之間發生熱交換,其中,該基板(7)在一平面中延伸之面向頂側(2')的背側(8)的表面具有至少一個不平的或自該平面拱起的區域(8'),其特徵在於:使用根據請求項3建構的基板架(2)。A method for processing a substrate (7), wherein the temperature of the top side (2') of the substrate holder (2) carrying the substrate (7) to be processed is regulated by heating or dissipating heat, so that the temperature between the substrate and the substrate holder (2) is adjusted. A heat exchange takes place between the substrates (7), wherein the surface of the substrate (7) extending in a plane facing the backside (8) of the top side (2') has at least one area (8') that is uneven or arched from the plane , characterized in that a substrate holder (2) constructed according to claim 3 is used. 如請求項1或15之製造OLED的方法,其中,該基板大於1 m2 且該等結構元件之高度介於50 μm與1 mm之間,或者,該等結構元件之高度落在介於50 μm與100 μm之間的範圍內。The method of manufacturing an OLED as claimed in claim 1 or 15, wherein the substrate is larger than 1 m 2 and the height of the structural elements is between 50 μm and 1 mm, or the height of the structural elements falls between 50 μm and 1 mm. in the range between μm and 100 μm. 如請求項16之方法,其中,將一氣態或液態介質饋送入建構為墊子之該等結構元件(11,12,13,14,15)的容積(19,27),以及/或者,饋送入墊子之該容積(19,27)或饋送入該等空間(20)的調溫氣體的壓力高於製程室(5)中該基板(7)之前側(9)上方的氣壓。A method as claimed in claim 16, wherein a gaseous or liquid medium is fed into the volumes (19, 27) of the structural elements (11, 12, 13, 14, 15) constructed as cushions, and/or in The volume (19, 27) of the pads or the pressure of the tempering gas fed into the spaces (20) is higher than the air pressure above the front side (9) of the substrate (7) in the process chamber (5). 如請求項1之方法,其中,該饋送入該等空間(20)或饋送入墊子(12,27)之容積的氣體為氮氣、氬氣、氖氣、氪氣、氙氣、氫氣或氦氣,或者至少90百分比由該等氣體中之一或數個構成,以及/或者,該基板(7)由玻璃、矽、聚醯胺或塑膠構成且該處理製程為OVPD製程,以及/或者,基板(7)具有大於0.15 m2 、大於1 m2 或大於2 m2 的面。The method of claim 1, wherein the gas fed into the spaces (20) or into the volume of the cushions (12, 27) is nitrogen, argon, neon, krypton, xenon, hydrogen or helium, Or at least 90% consists of one or more of these gases, and/or the substrate (7) consists of glass, silicon, polyamide or plastic and the process is an OVPD process, and/or the substrate (7) 7) Have faces larger than 0.15 m 2 , larger than 1 m 2 , or larger than 2 m 2 .
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US20090232983A1 (en) 2004-12-10 2009-09-17 Koninklijke Philips Electronics, N.V. Substrate temperature control for combustion chemical vapor deposition
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US20100247804A1 (en) 2009-03-24 2010-09-30 Applied Materials, Inc. Biasable cooling pedestal
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