TW202145433A - Substrate holder having an elastic substrate support - Google Patents
Substrate holder having an elastic substrate support Download PDFInfo
- Publication number
- TW202145433A TW202145433A TW110112204A TW110112204A TW202145433A TW 202145433 A TW202145433 A TW 202145433A TW 110112204 A TW110112204 A TW 110112204A TW 110112204 A TW110112204 A TW 110112204A TW 202145433 A TW202145433 A TW 202145433A
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- structural elements
- top side
- substrate holder
- spaces
- Prior art date
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
- C23C16/463—Cooling of the substrate
- C23C16/466—Cooling of the substrate using thermal contact gas
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
本發明係有關於一種用於應用在基板處理裝置中之基板架,具有可透過供熱或散熱來調溫的頂側,其在基板處理中承載基板,該基板在平行於頂側之平面中延伸的背側面向該頂側,其中,該背側之表面具有至少一個不平的或自一平面拱起的區域。The invention relates to a substrate rack for use in a substrate processing apparatus, having a top side that can be tempered by heating or cooling, which carries substrates in a plane parallel to the top side during substrate processing The extended backside faces the topside, wherein the surface of the backside has at least one region that is uneven or arched from a plane.
本發明亦有關於一種基板處理製程,其中在基板架之頂側上設有基板,並且藉由該基板架對該基板進行調溫。可對基板進行冷卻或加熱。在該處理製程中,可在基板之面向製程室的表面上沉積層序列或單個層。可透過將蒸汽或氣體饋送入製程室來進行此操作,為此設有氣體入口構件。亦可將層或基板之表面之區域移除,例如透過將蝕刻氣體饋送入製程室實現。該基板處理製程特別是為用於在基板上、尤其玻璃基板上製造OLED所需之層的方法。層沉積亦為聚合製程。The present invention also relates to a substrate processing process, wherein a substrate is provided on the top side of a substrate holder, and the temperature of the substrate is regulated by the substrate holder. The substrate can be cooled or heated. During this process, a sequence of layers or a single layer may be deposited on the chamber-facing surface of the substrate. This can be done by feeding steam or gas into the process chamber, for which gas inlet means are provided. Areas of the surface of the layer or substrate can also be removed, eg by feeding an etching gas into the process chamber. The substrate processing process is in particular a method for producing the layers required for OLEDs on substrates, especially glass substrates. Layer deposition is also a polymerization process.
本發明亦有關於一種基板處理裝置,其中在基板架之頂側上設有基板。該基板架可具有調溫裝置,例如加熱裝置或冷卻裝置,用於對基板架之承載基板的頂側進行加熱或冷卻。一製程室在基板架之頂側與氣體入口構件之間延伸,可藉由該氣體入口構件將蒸汽或氣體饋送入該製程室。該氣體入口構件可具有蓮蓬頭之形狀。透過數個設於該氣體入口構件之排氣面中的排氣通道,載氣能夠將該蒸汽或反應氣體輸送入製程室。該基板處理裝置亦可具有氣體出口構件,至少載氣能夠透過該氣體出口構件自製程室排出。The present invention also relates to a substrate processing apparatus in which a substrate is provided on the top side of a substrate holder. The substrate rack may have a temperature regulating device, eg a heating device or a cooling device, for heating or cooling the top side of the substrate rack carrying the substrates. A process chamber extends between the top side of the substrate rack and the gas inlet member through which steam or gas can be fed into the process chamber. The gas inlet member may have the shape of a shower head. The carrier gas can deliver the vapor or reaction gas into the process chamber through a plurality of exhaust channels provided in the exhaust surface of the gas inlet member. The substrate processing apparatus may also have a gas outlet member, at least the carrier gas can be discharged from the process chamber through the gas outlet member.
DE 10 2011 078 673 A1揭示過用於基板之真空處理的一種方法以及一種裝置,其中自基板伸出多個層片,其將基板承載。DE 10 2011 078 673 A1 discloses a method and an apparatus for the vacuum treatment of substrates, in which a plurality of layers protrude from the substrate, which carry the substrate.
US 5,605,574 A描述過一種基板架,在該基板架上設有多個折褶風箱狀的間隔元件,其將基板承載。US 5,605,574 A describes a substrate holder on which a plurality of pleated bellows-like spacer elements are provided, which carry the substrates.
JP 2003-239070 A描述過一種基板架,其支撐在彈性結構元件上。JP 2003-239070 A describes a substrate holder supported on elastic structural elements.
在JP 2006-190805中描述過一種裝置,其包含用於將基板保持在基板架上的保持裝置。US 5,199,483揭示過一種用於保持基板的裝置,藉由此裝置對基板進行冷卻。A device is described in JP 2006-190805, which includes a holding device for holding a substrate on a substrate holder. US 5,199,483 discloses a device for holding a substrate by means of which the substrate is cooled.
WO 2006/036992A1描述過一種方法,其用於對貼靠於基板架之頂側上的基板進行冷卻。WO 2006/036992 A1 describes a method for cooling a substrate resting on the top side of a substrate holder.
WO 2006/061784A1以及US 2010/0247804A1亦揭示過用於將基板保持在經冷卻之基板架上的裝置。WO 2006/061784A1 and US 2010/0247804A1 also disclose devices for holding substrates on cooled substrate holders.
US 2016/0376697A1亦歸屬於先前技術。在DE 10 2015 118 765 A1中描述過一種利用蓮蓬頭以及經冷卻之基板架來沉積OLED的裝置。US 2016/0376697A1 also belongs to the prior art. In DE 10 2015 118 765 A1 an apparatus for depositing OLEDs using a shower head and a cooled substrate holder is described.
就例如在最後提及之DE 10 2015 118 765 A1中描述的習知的基板處理方法而言,可為玻璃基板或塑膠基板的待處理基板藉由其背側貼靠在經冷卻之基板架之頂側上。透過經加熱之氣體入口構件,將預先例如透過將提供之氣膠蒸發而產生之蒸汽饋送入處理裝置之製程室。氣體入口構件之溫度高於蒸汽之冷凝溫度。藉由設於基板架中之冷卻裝置,將承載基板的頂側冷卻至遠低於蒸汽之冷凝溫度的溫度。透過藉由位於基板之背側與基板架之頂側之間的間隙持續地散熱,將基板面向製程室的前側調節至一溫度,在此溫度下,蒸汽在前側上冷凝,從而沉積層、特別是有機層。可相繼沉積數個層,其具有互不相同的層組成。可透過遮罩對此操作進行結構化。基板貼靠於基板架之頂側上的背側大致在一平面中延伸。但至少在一部分區域內,背側之表面有別於精確的數學平面。此等偏差一方面歸因於背側之表面之天然粗糙度,但另一方面亦歸因於製造公差。背側之表面之不平度亦可能是自平面拱起之區域。若此種基板貼靠在基板架之同樣僅大致平整之頂側上,則在基板之背側與基板架之頂側之間僅發生點式接觸。僅在此等接觸點上直接透過兩個固體之接觸進行熱輸運。在位於接觸點之間的區域內,或是透過輻射,或是藉由透過存在於位於基板之背側與基板架之頂側之間的空間中的氣體進行熱傳導,以進行熱輸運。穿過此空間之熱流受氣體之壓力、間隙高度以及氣體之莫耳質量影響。其中,相關參數為氣體分子之平均自由徑或克努森數。由於自基板至基板架之熱流局部有所不同,基板之待塗佈的前側具有不均勻的橫向溫度曲線。In the case of the conventional substrate processing methods described, for example, in the last-mentioned
本發明之目的在於:提供用於將基板之前側之橫向溫度曲線均勻化的手段。An object of the present invention is to provide means for uniformizing the lateral temperature profile of the front side of the substrate.
本發明之目的特別是在於:提供用於沉積OLED的一種裝置及一種方法,其中層品質具有儘可能大之橫向均勻性。The object of the present invention is, in particular, to provide a device and a method for depositing OLEDs in which the layer quality has the greatest possible lateral uniformity.
本發明用以達成上述目的之解決方案為在申請專利範圍中給出之發明。附屬項不僅為在並列請求項中給出之發明的有利改進方案,亦為該目的之獨立解決方案。The solution of the present invention to achieve the above object is the invention given in the scope of the patent application. The accessory is not only an advantageous improvement of the invention given in the concurrent claim, but also an independent solution to this purpose.
本發明提出:該基板不直接位於該基板架之頂側上。在基板架之頂側與基板之背側之間設有基板支架。該基板支架係建構成因彈性變形而與該背側之表面接觸式抵靠。因此,該基板支架可由一個主體、但亦可由數個主體構成,該等主體實現位於基板架與基板之間的熱流,其中,該基板架較佳為冷卻體,熱自基板穿過間隔區域流動至此冷卻體,其中,該基板支架設置在該間隔區域內。可採用以下方案:該基板支架具有一或數個結構元件。該等結構元件可為彈性體,其能夠彎曲及/或壓縮。該等結構元件可整面地佈置在該頂側上。但該等結構元件亦可僅局部地佈置在該頂側上。在各結構元件之間可存在空間,其係經氣體填充。但亦可將氣體饋送入該等空間。此外可採用以下方案:該等結構元件僅佈置在該頂側之被基板遮蓋的區域的邊緣上。故可採用以下方案:該等結構元件僅承載基板之邊緣。若在結構元件之間有空隙或空間,或者若結構元件僅佈置在基板之邊緣上,則可自基板架出發將調溫氣體饋送入該空間。在此情形下,特別是在空間之區域內,藉由透過饋送入該空間之氣體進行的熱傳導來實現自基板至基板架的熱輸運。可設有氣體輸送管線,其自基板架出發通入該空間。透過此輸送管線能夠將調溫氣體饋送入位於基板之背側、基板架之頂側與結構元件之側壁之間的空間。該調溫氣體可流過該空間,或可流過數個空間。沿基板之邊緣佈置的結構元件可藉由其空間形成一迷宮式密封裝置。該迷宮式密封裝置藉此將內部區域與周圍環境隔絕。該調溫氣體可為氮氣、氬氣、氖氣、氪氣、氙氣、氫氣或氦氣。該調溫氣體亦可為混合物,其中特別是採用以下方案:該混合物之至少90百分比由前述氣體中之一個或數個構成。但該等結構元件亦可以在基板架之頂側之整個面的範圍內均勻分佈的方式佈置。該等結構元件可以幾何規則或統計均勻的方式佈置在頂側之範圍內。該等結構元件可具有一致的尺寸。該等結構元件亦可具有一致的構造。舉例而言,該等結構元件可以形成長形條、肋部或立方體狀的塊。該等結構元件可具有相互平行延伸的側壁。但該等結構元件亦可具有經底切之側壁,使得結構元件之用以固定在基板架之頂側上的底腳區域的基本輪廓小於形成支承面的頭部區域,基板之背側支撐在該支承面上。可將該調溫氣體饋送入位於該等結構元件之間的空間。The invention proposes that the substrate is not directly on the top side of the substrate holder. A substrate holder is provided between the top side of the substrate holder and the back side of the substrate. The substrate holder is configured to abut against the surface of the backside in contact due to elastic deformation. Therefore, the substrate holder can be composed of one main body, but also several main bodies, which realize the heat flow between the substrate holder and the substrate, wherein the substrate holder is preferably a cooling body, and the heat flows from the substrate through the spaced area Heretofore, the cooling body, wherein the base plate holder is arranged in the spaced region. The following solution can be adopted: The substrate holder has one or several structural elements. These structural elements may be elastomers, which are capable of bending and/or compression. The structural elements can be arranged on the top side over the entire surface. However, the structural elements can also be arranged only partially on the top side. There may be spaces between the structural elements, which are filled with gas. But it is also possible to feed gas into these spaces. Furthermore, it is possible to use the solution that the structural elements are only arranged on the edge of the area of the top side which is covered by the substrate. Therefore, the following solution can be adopted: the structural elements only carry the edge of the substrate. If there are gaps or spaces between the structural elements, or if the structural elements are only arranged on the edges of the substrate, the temperature-controlling gas can be fed into this space starting from the substrate holder. In this case, especially in the region of the space, heat transport from the substrate to the substrate holder is achieved by heat conduction through the gas fed into the space. A gas delivery line may be provided which leads from the substrate holder into the space. Through this conveying line it is possible to feed the tempering gas into the space between the back side of the substrate, the top side of the substrate holder and the side walls of the structural element. The tempering gas may flow through the space, or may flow through several spaces. Structural elements arranged along the edge of the substrate can form a labyrinth seal with their spaces. The labyrinth seal thereby isolates the inner region from the surrounding environment. The tempering gas can be nitrogen, argon, neon, krypton, xenon, hydrogen or helium. The tempering gas can also be a mixture, wherein in particular the following solution is used: at least 90 percent of the mixture consists of one or more of the aforementioned gases. However, the structural elements can also be arranged uniformly distributed over the entire surface of the top side of the substrate holder. The structural elements may be arranged within the confines of the top side in a geometrically regular or statistically uniform manner. The structural elements may have uniform dimensions. The structural elements may also have a uniform configuration. For example, the structural elements may form elongated strips, ribs or cube-shaped blocks. The structural elements may have side walls extending parallel to each other. However, the structural elements can also have undercut side walls, so that the basic contour of the foot area of the structural element for fixing on the top side of the substrate holder is smaller than the head area forming the bearing surface, the back side of the substrate being supported on the support surface. The tempering gas can be fed into the space between the structural elements.
可以例如高於製程室壓力2 mbar、5 mbar的過壓將調溫氣體饋送入空間。該過壓較佳小於1 mbar。但其亦可小於5 mbar。製程室壓力可落在介於1 mbar與5 mbar之間的範圍內。但其亦可落在介於0.5 mbar與1 mbar之間的範圍內。該製程室壓力特別是可小於1 mbar或0.5 mbar。為了避免中間區域內之較高壓力造成基板抬升,設有保持構件。此類保持構件可以機械方式起作用,例如,在基板上可貼靠有一遮罩,其重量提供力。但亦可採用以下方案:使用磁力或靜電力來保持基板。但作為例如直接施加(例如黏合)至基板架之表面、尤其金屬表面的各結構元件的替代方案,該基板支架亦可由一或數個具有數個突出部的主體構成,該等主體係施加在該基板架之頂側上。特別是採用以下方案:此種主體為襯墊,其具有背離頂側的突出部。此等突出部係可彈性變形,例如可彎曲及/或可壓縮。但亦可採用以下方案:該基板支架係由一或數個發泡體或者可以其他方式壓縮之主體構成。此種主體具有兩個相互背離之表面,其可整面地緊貼至基板架之頂側之表面或基板之背側之表面。該主體可為開放氣室式發泡體。將玻璃、矽,但亦將氧化鋁或鋁、銅、鈦或另一金屬用作基板。該基板亦可為塑膠、聚醯胺,特別是為透明塑膠。該基板可具有超過0.15 m2 的平面延伸度。該基板亦可大於1 m2 或大於2 m2 。該等結構元件亦可為能夠彎曲的纖維或細柱。此類結構元件如絨毛或刷毛那般自基板架之頂側伸出。具備如此可撓性之結構元件能夠在力作用下彎曲,從而藉由其側壁承載基板。該等結構元件之高度較佳僅略大於基板之背側之最大不平度。但結構元件之高度亦可更大。結構元件之高度可大於5 μm、大於10 μm、大於50 μm、大於100 μm或大於1 mm。但結構元件之高度應小於5 mm。根據一較佳技術方案,該等結構元件之高度介於50μm與1 mm之間。該高度較佳為約50μm至100μm。結構元件之橫向延伸度可小於其高度。特別是當結構元件建構為柱或纖維(如絨毛或刷毛)時,其橫截面之圓當量直徑為其高度之至多十分之一。結構元件之典型橫向尺寸係小於5 cm或小於1 mm。但橫向尺寸亦可大於5 cm。結構元件例如可具有大於0.2 mm、大於0.5 mm、大於1 mm、大於2 mm或大於5 mm的長度。特別是採用以下方案:結構元件之最大長度為20 mm。結構元件所佔據的面積可小於50 mm2 。結構元件之寬度可大於5 mm或小於1 mm。該等結構元件亦可具有腔室。該等結構元件特別是可建構為墊子。此種結構元件具有彈性包裹物。可將一氣體饋送入經該包裹物包圍之容積,該氣體賦予墊子彈性。饋送入容積的該氣體亦可為調溫氣體,其賦予墊子導熱性。可採用以下方案:使得調溫氣體在處理製程期間穿過墊子流動。在此情形下,該容積具有進線及出線。但亦可將一調溫液體饋送入該容積。亦可採用以下方案:該容積係封閉。該墊子亦可為凝膠墊,在其容積中設有導熱的凝膠。可採用以下方案:該基板位於單獨一個墊子、例如凝膠墊上。在此情形下,該基板支架由一個凝膠墊構成。但亦可採用以下方案:該基板支架由數個墊子、特別是凝膠墊構成。特別是可採用以下方案:該基板架之頂側完全地、即100百分比地配設有該基板支架,並且特別是配設有由該基板支架形成之結構元件。但亦可採用以下方案:至少90百分比、10百分比、3百分比或1百分比的部分配設有結構元件。The tempering gas can be fed into the space at an overpressure of, for example, 2 mbar, 5 mbar above the process chamber pressure. The overpressure is preferably less than 1 mbar. However, it can also be less than 5 mbar. The process chamber pressure can fall in the range between 1 mbar and 5 mbar. But it can also fall in the range between 0.5 mbar and 1 mbar. In particular, the process chamber pressure can be less than 1 mbar or 0.5 mbar. In order to prevent the substrate from being lifted due to the higher pressure in the intermediate region, a holding member is provided. Such a holding member may act mechanically, for example, a mask may rest on the substrate, the weight of which provides the force. However, it is also possible to use a magnetic or electrostatic force to hold the substrate. However, as an alternative to the respective structural elements, eg directly applied (eg glued) to the surface of the substrate holder, especially the metal surface, the substrate holder can also consist of one or several bodies with several projections, which bodies are applied on the on the top side of the substrate holder. In particular, the following solution is used: such a body is a pad with a projection facing away from the top side. These protrusions are elastically deformable, eg bendable and/or compressible. However, the following solutions can also be adopted: the substrate support is composed of one or more foams or bodies that can be compressed in other ways. Such a main body has two surfaces facing away from each other, which can be in close contact with the surface of the top side of the substrate holder or the surface of the back side of the substrate. The body may be an open cell foam. Glass, silicon, but also aluminium oxide or aluminium, copper, titanium or another metal are used as substrates. The substrate can also be plastic, polyamide, especially transparent plastic. The substrate may have a planar extension in excess of 0.15 m 2 . The substrate can also be larger than 1 m 2 or larger than 2 m 2 . The structural elements can also be fibers or thin posts that can be bent. Such structural elements protrude from the top side of the substrate holder like fluff or bristles. A structural element with such flexibility is capable of bending under force to carry the substrate by its sidewalls. The height of these structural elements is preferably only slightly greater than the maximum unevenness of the backside of the substrate. However, the height of the structural elements can also be greater. The height of the structural elements may be greater than 5 μm, greater than 10 μm, greater than 50 μm, greater than 100 μm or greater than 1 mm. However, the height of structural elements should be less than 5 mm. According to a preferred technical solution, the height of the structural elements is between 50 μm and 1 mm. The height is preferably about 50 μm to 100 μm. The lateral extension of the structural element may be less than its height. In particular, when the structural elements are constructed as columns or fibers, such as fluff or bristles, the circle-equivalent diameter of their cross-section is at most one tenth of their height. Typical lateral dimensions of structural elements are less than 5 cm or less than 1 mm. However, the horizontal dimension can also be larger than 5 cm. The structural element may have a length of, for example, greater than 0.2 mm, greater than 0.5 mm, greater than 1 mm, greater than 2 mm or greater than 5 mm. In particular, the following scheme is used: the maximum length of the structural elements is 20 mm. The area occupied by the structural elements may be less than 50 mm 2 . The width of the structural elements can be greater than 5 mm or less than 1 mm. These structural elements may also have cavities. These structural elements can in particular be constructed as mats. This structural element has an elastic wrap. A gas can be fed into the volume enclosed by the wrap, the gas imparting elasticity to the cushion. The gas fed into the volume can also be a tempering gas, which imparts thermal conductivity to the mat. The following approach may be employed: The tempering gas is allowed to flow through the mat during the treatment process. In this case, the volume has incoming and outgoing lines. However, a tempering liquid can also be fed into the volume. The following scheme can also be used: The volume is closed. The pad can also be a gel pad with a thermally conductive gel in its volume. The following scheme can be used: the substrate is on a single pad, eg a gel pad. In this case, the substrate holder consists of a gel pad. However, the following solution can also be used: the substrate holder is composed of several pads, especially gel pads. In particular, it is possible to use the solution that the top side of the substrate holder is completely, ie 100 percent, provided with the substrate holder, and in particular with the structural elements formed by the substrate holder. However, it is also possible to use the following scheme: at least 90%, 10%, 3% or 1% of the part is provided with structural elements.
饋送入墊子之該容積的調溫氣體或饋送入位於結構元件之間之該空間的調溫氣體較佳具有高導熱性,以至於主導基板與基板架之間之熱輸運。藉由本發明之結構元件能夠實現:並非透過基板之背側表面與結構元件的接觸面來進行大部分的熱輸運,而是大致透過將空間填充的調溫氣體來進行熱輸運。故可採用以下方案:該等結構元件以及該調溫氣體具有特定的導熱特性,使得透過調溫氣體流動的熱流大於流經所有結構元件的總熱流。該等結構元件之橫截面與該等空間之橫截面較佳具有一定比例,使得所有結構元件之橫截面總和遠小於所有空間之橫截面總和。The tempering gas fed into the volume of the mat or into the space between the structural elements preferably has a high thermal conductivity so as to dominate the heat transport between the substrate and the substrate holder. With the structural element of the present invention, it is possible to realize that most of the heat transport is not carried out through the contact surface between the backside surface of the substrate and the structural element, but substantially through the temperature-adjusting gas that fills the space. Therefore, the following solution can be adopted: the structural elements and the temperature-adjusting gas have specific thermal conductivity properties, so that the heat flow through the temperature-adjusting gas is greater than the total heat flow through all the structural elements. The cross-sections of the structural elements are preferably proportional to the cross-sections of the spaces such that the sum of the cross-sections of all the structural elements is much smaller than the sum of the cross-sections of all the spaces.
圖1顯示先前技術中眾所周知的OVPD反應器。此OVPD反應器具有相對外界氣密的殼體1。在殼體1中設有氣體入口構件3,其具有蓮蓬頭之形狀。氣體入口構件3具有大致呈矩形的基本輪廓,並且在面向製程室5的排氣面上具有數個排氣口3'。可透過氣體輸送管線4將有機起始材料之蒸汽饋送入氣體入口構件3之容積。藉由載氣進行此操作。預先在未顯示之蒸發器中產生該蒸汽,具體方式例如為:在該蒸發器中透過供熱將作為氣膠送至蒸發器的有機粉末轉化成蒸汽形式。氣體入口構件3之排氣面係經加熱。將該排氣面加熱至一高於蒸汽之冷凝溫度的溫度。Figure 1 shows an OVPD reactor well known in the prior art. This OVPD reactor has a
製程室5之底部由基板架2之頂側2'構成。基板架2大致由一冷卻體構成。該冷卻體具有冷卻裝置6,其可為冷卻通道,一液態冷卻介質能夠穿過該等冷卻通道流動。在基板架2之頂側2'上設有待塗佈之基板。該基板具有前側9,其面向製程室5,以及,透過使蒸汽在前側9上冷凝,藉由有機蒸汽對該前側進行塗佈。為此,需要自基板7提取熱。此舉藉由基板架2實現。The bottom of the
根據本發明,在基板7之背側8與基板架2之頂側2'之間設有在圖2中用元件符號10表示的基板支架。結合圖3對基板支架10的根據本發明的作用進行說明,該圖顯示對應於圖1的裝置,其中基板7之背側8直接貼靠在基板架2之頂側2'上。背側8大致在一平面中延伸。但其具有不平度,例如拱起部8'。此等不平度導致該背側與同樣非理想平面的頂側2'僅點式接觸。僅在接觸點上透過固體接觸進行自基板7至基板架2的熱輸運。在中間區域內,大致透過藉由位於空間中之氣體進行的熱傳導,來實現自基板至基板架2的熱輸運。According to the invention, between the
不同於如圖3所示的先前技術中的情形,根據本發明,在基板7之背側8與頂側2'之間設有形式為基板支架10的彈性介質。藉由此彈性介質對不平度8'進行補償。此舉使得自基板7至基板架2的熱輸運均勻化。Unlike the situation in the prior art as shown in FIG. 3 , according to the invention an elastic medium in the form of a
元件符號30表示保持構件,例如靜電或電磁保持構件,藉由該等保持構件向基板7施力,該力沿頂側2'之表面法線方向起作用,並且朝向基板架2對基板7施力,使得基板支架10發生變形。在其他實施例中,保持構件30亦具有以下功能:以抵抗在基板7下方饋送入腔室之調溫氣體的壓力的方式將基板7保持。元件符號31表示例如由金屬構成之遮罩,其貼靠在基板上,從而對基板進行結構化。僅在圖1中顯示遮罩31。此外,遮罩31提供質量,藉由該質量朝向頂側2'對基板施力,從而實現致使基板支架10變形的重力,但其亦以抵抗饋送入位於頂側2'與背側8之間之空間之調溫氣體之壓力的方式將基板7保持。
圖4、圖5及圖6顯示本發明之第一實施例,其中,僅沿基板架之頂側2'之被基板7遮蓋的區域的邊緣設有結構元件11。該等結構元件可為長條形的彈性體,其例如由塑膠構成,但亦可由金屬或另一適合的材料構成。結構元件11係如此沿該邊緣佈置,使得在相鄰之結構元件11之間留有空間20。結構元件11係以留有間隙的方式相互錯開佈置,從而相對被結構元件11包圍之內腔形成一迷宮式密封裝置。若基板7貼靠在結構元件上,則在背側8與頂側2'之間形成一空腔17。可將一調溫氣體饋送入此空腔17。為此設有氣體輸送管線16,其與頂側2'連通。該調溫氣體引起自基板7至基板架2的熱傳導。背側8與頂側2'的距離可落在介於5 μm與1 mm之間的範圍內。Figures 4, 5 and 6 show a first embodiment of the present invention, wherein the
在一未顯示的實施例中,該等長條形結構元件11(其長度至多可為5 cm且其寬度至多可為1 mm)可以在整個頂側2'之範圍內以均勻分佈的方式佈置。各結構元件11之間的空間可與氣體輸送管線16連通。為了抵抗較環境壓力更高之調溫氣體壓力將基板保持,可使用前述保持構件30。調溫氣體之過壓可為0.5 mbar至1 mbar。In an embodiment not shown, the elongated structural elements 11 (whose length may be at most 5 cm and whose width may be at most 1 mm) may be arranged in a uniformly distributed manner over the entire top side 2' . The spaces between the
在如圖7所示之第二實施例中,結構元件11具有大致呈正方形的基本輪廓,並且至少在基板架2之頂側2'之被基板7遮蓋的區域內均勻地佈置。結構元件11係以規則的佈局在頂側2'之範圍內均勻分佈。但其亦可不規則地分佈。但其亦可不規則地且統計均勻地在頂側2'之範圍內分佈。其基本輪廓亦可為圓形、橢圓形或矩形。該輪廓亦可任意地延伸。In the second embodiment shown in FIG. 7 , the
如圖8所示之第三實施例顯示氣體輸送管線16,其直接與中央自由面之邊緣連通,該自由面係由採用多行佈局的結構元件11界定。結構元件11在此具有相互平行延伸之側壁21、22,並且具有寬度B,其落在介於1 mm與5 mm之間的範圍內。該等結構元件具有長度L,其落在介於1 mm與50 mm之間的範圍內。兩個相鄰之結構元件11之間的距離A可等於高度H之尺寸。但距離A亦可大於或小於高度H。基板7之背側8所支撐於的支承面23的尺寸可小於50 mm2
。在此,結構元件11可由彈性固體構成,該等彈性固體係用橡膠、塑膠或另一彈性材料製成。結構元件之容積完全被該材料填滿。The third embodiment shown in FIG. 8 shows a
圖9顯示本發明之第四實施例,其中,結構元件12具有腔室19。結構元件12係建構為墊子,並且具有可撓性的包裹物18。包裹物18形成側壁21、22及支承面23。在本實施例中,墊子12係朝向頂側2'敞開。該包裹物係以邊緣例如透過黏合連接與頂側2'連接。包裹物18之容積19與一氣體輸送管線16連通,用以將調溫氣體饋送入該包裹物。在一未顯示的實施例中,結構元件12之腔室19不僅與氣體輸送管線16連通,亦與排氣管線連通,故調溫氣體能夠穿過腔室19流動。寬度B、高度H以及相鄰之結構元件12之距離可具有上述值。結構元件12亦可如圖5至圖8所示的那般佈置及/或建構。亦可在頂側2'之範圍內延伸的墊子12之包裹物可由塑膠、橡膠或薄金屬箔構成。FIG. 9 shows a fourth embodiment of the present invention, wherein the
圖10及圖11顯示本發明之第五實施例,其中,結構元件15具有經底切之側壁21、22。用於將結構元件15固定於頂側2'上的面24小於支承面23,基板7以其背側8貼靠在該支承面上。結構元件15可建構為肋部,其長度大於寬度。結構元件15之寬度可小於結構元件15之高度。特別是採用以下方案:底腳區域24之寬度小於結構元件15之高度。Figures 10 and 11 show a fifth embodiment of the present invention, wherein the
如圖11所示之結構元件15a、15b、15c、15d、15e以及15f具有不平行於頂側2'延伸的支承面23。結構元件15a至15f能夠基於其彈性而傾斜,故支承面23能夠以面接觸的方式緊貼至背側8上。此外,結構元件15亦可具備可壓縮特性。結構元件15以彈性方式變形,故在將基板7取下後,該等結構元件能夠重新恢復原始形狀。The
如圖12及圖13所示之第六實施例顯示紗線、柱、刷毛或絨毛形式的結構元件13。結構元件13具有長條形造型。其直徑小於其長度。結構元件之定義高度H的長度較佳至少為結構元件13之橫截面之圓當量直徑的十倍。結構元件13較佳在其整個長度延伸範圍內具有不變的橫截面。類似於如圖11所示之結構元件,刷毛或絨毛狀結構元件13能夠彎曲。以抵抗彈性復位力的方式進行彎曲。圖12顯示處於未經施力狀態下的結構元件13,其中,該等結構元件大致平行於頂側2'之表面法線直線延伸。若將基板7鋪設至此等紗線狀結構元件13上,則結構元件13如彈簧桿那般作出回應並彎曲,致使結構元件13與自由端鄰接的表面區域緊貼至底側8上。The sixth embodiment shown in Figures 12 and 13 shows
在未顯示之實施例中,柱狀結構元件13亦可自一開始、即在未經基板7施力的狀態下便具有相對頂側2'之表面法線的傾斜度。據此,結構元件13可為相對該等表面法線傾斜延伸的桿部。此等桿部可相互平行延伸。但其亦可互成一定角度,例如成對地呈V狀。該等桿部可透過黏合劑與頂側2'連接。但其亦可自與頂側2'連接的固定箔伸出。亦可採用以下方案:此等結構元件13在頂側2'之整個延伸面的範圍內延伸。但結構元件13亦可僅在承載基板7的區域的邊緣範圍內延伸。In an embodiment not shown, the columnar
前述結構元件11、13、15係直接且相互間隔一定距離地固定在頂側2'上,而如圖14所示之第七實施例則揭示一變體方案。該等結構元件亦可自基箔伸出。據此,該等結構元件可作為突出部14自基箔伸出,並且一體式地與基箔連接。The aforementioned
在如圖14所示之實施例中,結構元件14由塊狀突出部構成,其尺寸對應前述結構元件。一體式構成突出部14的襯墊25之底側係以適當的方式與頂側2'在其整個面的範圍內連接,例如黏合。亦可採用靜電連接。兩個突出部14之間的空間20可與氣體輸送管線16連通,用以將調溫氣體饋送入空間20。In the embodiment shown in FIG. 14 , the
在前述實施例中,透過相互間隔一定距離之結構元件11、13、14、15之支承面23對基板7之背側8點式施力。結構元件11、13、14、15特別是亦在拱起區域8'處對背側8施力,從而亦在該處產生用於熱傳導的固體接觸。在位於結構元件11、13、14、15之間的空間20中,藉由透過氣體進行的熱傳導來進行熱輸運,該氣體可透過氣體輸送管線16饋送或處於製程室中。In the aforementioned embodiment, the backside of the
在本發明之如圖15所示之第八實施例中,基板支架10之連續表面貼靠在背側8上,並且特別是貼靠在拱起區域8'上。基板支架10在此由發泡體26、特別是由開放氣室式發泡體26構成。發泡體26可由彈性材料,例如橡膠或塑膠構成。該發泡體亦可由與前述結構元件11、13、14、15相同的材料構成,例如由PET或由PE構成。但不同之處在於:發泡體26具有空腔,其較佳地是相對周圍環境開放,以便進行氣體交換。In an eighth embodiment of the invention, shown in FIG. 15 , the continuous surface of the
在本發明之如圖16所示之第九實施例中,基板支架10之連續表面同樣貼靠在基板7之背側8上,並且特別是平面式貼靠在拱起區域8'之表面上。基板支架10在此由凝膠體27構成,該凝膠體大致為墊子。由諸如塑膠或橡膠或金屬箔的可撓性材料構成的包裹物28將空腔包圍,該空腔係經凝膠29填充。In the ninth embodiment of the invention, shown in FIG. 16 , the continuous surface of the
前述實施方案係用於說明本申請整體所包含之發明,該等發明至少透過以下特徵組合分別獨立構成相對於先前技術之改良方案,其中,此等特徵組合中的兩項、數項或其全部亦可相互組合,即:The foregoing embodiments are used to illustrate the inventions contained in the present application as a whole, and these inventions independently constitute improvements over the prior art through at least the following feature combinations, wherein two, several or all of these feature combinations Can also be combined with each other, namely:
一種基板架,其特徵在於設於頂側2'上之可彈性變形的基板支架10,其因彈性變形而與背側8、8'之表面接觸式抵靠。A substrate holder is characterized by an elastically
一種基板架,其特徵在於:基板支架10具有結構元件11、12、13、14、15,以及/或者,基板支架10所構成之結構元件11、12、13、14、15僅佈置在頂側2'之被基板7遮蓋之區域之邊緣上,以及/或者,基板支架10所構成之結構元件11、12、13、14、15規則地並且以均勻的排列分佈在頂側2'之範圍內,使得結構元件11、12、13、14、15大致均勻貼靠在基板7之整個背側8、8'上,以及/或者,結構元件11至15由塑膠、PET、PE或由金屬、金屬線或薄金屬箔構成,以及/或者,基板支架10為在頂側2'之整個被基板7遮蓋之面的範圍內延伸的一體式或分體式主體25、27,以及/或者,基板支架10係由形成突出部14的襯墊25或由發泡體26構成。A substrate holder, characterized in that the
一種基板架,其特徵在於:結構元件11、12、13、14、15係相互間隔一定距離,以及/或者,調溫氣體能夠穿過設於結構元件11、12、13、14、15之間的空間20,以及/或者,結構元件11、12、13、14、15之間的至少一個空間20或者頂側2'之經結構元件11、12、13、14、15包圍的區域與至少一個氣體管線16連通,以及/或者,結構元件11、12、13、14、15係建構為柱、纖維13或隔片14、15,其因彈性及/或因其橫截面及其沿基板支承面之表面法線測得的高度H而能夠彎曲,以及/或者,結構元件具有大於0.2 mm、大於0.5 mm、大於1 mm、大於2 mm、大於5 mm並且小於20 mm的長度L,以及/或者,結構元件11、12、13、14、15之長度L落在介於0.5 mm與2 mm之間的範圍內。A substrate frame is characterized in that: the
一種基板架,其特徵在於:至少一部分、較佳所有結構元件11、12、13、14、15皆建構為墊子12,其中,墊子12具有包裹物18、28,其限定一容積19、27,該容積係經液態或氣態介質填充,以及/或者,液態或氣態介質能夠流入該容積,以及/或者,該容積可被液態或氣態介質流過。A substrate rack, characterized in that at least a part, preferably all of the
一種基板架,其特徵在於:設有保持構件30,藉由該等保持構件以機械、靜電、氣動及/或磁方式將基板7保持在基板架2上,以及/或者,為了保持基板7,使用至少貼靠在基板7之邊緣上的遮罩31,以及/或者,基板架2為冷卻體,其中,設有冷卻裝置6,其將自基板7導出之熱運走。A substrate holder, characterized in that: there are holding
一種基板架,其特徵在於:結構元件11、12、13、14、15之沿頂側2'之表面法線方向測得的高度H大於5 μm、大於10 μm、大於50 μm、大於100 μm、大於1 mm、但小於5 mm,以及/或者,結構元件11、12、13、14、15之高度H介於50 μm與1 mm之間。A substrate frame is characterized in that: the height H of the
一種基板架,其特徵在於,結構元件11、12、13、14、15具有沿頂側2'之面延伸方向測得的長度L或寬度B,其大於50 mm、小於5 mm或小於1 mm,以及/或者,結構元件11、12、13、14、15之在頂側2'之面延伸中測得之面積小於50 mm2
,以及/或者,結構元件15之至少一個沿頂側2'之表面法線方向延伸的側壁21、22係經底切,以及/或者,結構元件15之在與頂側2'鄰接之底腳區域24中的橫截面小於貼靠於基板7之背側8上之頭部區域23的橫截面。A substrate holder, characterized in that the
一種基板處理製程,其特徵在於:使用根據前述請求項中任一項建構的基板架2。A substrate processing process is characterized by using the
一種基板處理製程,其特徵在於:將一調溫氣體饋送入位於結構元件11、12、13、14、15之間的空間20,以及/或者,將一氣態或液態介質饋送入建構為墊子之結構元件11、12、13、14、15的容積19、27,以及/或者,饋送入墊子之容積19、27或空間20的調溫氣體的壓力高於製程室5中基板7之前側9上方的氣壓。A substrate processing process, characterized in that a temperature-adjusting gas is fed into the
一種基板處理製程,其特徵在於:該饋送入空間20或饋送入墊子12、27之容積的氣體為氮氣、氬氣、氖氣、氪氣、氙氣、氫氣或氦氣或者至少90百分比由此等氣體中之一或數個構成,以及/或者,基板7由玻璃、矽、聚醯胺或塑膠構成且該處理製程為OVPD製程,以及/或者,基板7具有大於0.15 m2
、大於1 m2
或大於2 m2
的面。A substrate processing process, characterized in that: the gas fed into the
一種裝置,其特徵在於如請求項1至6中任一項的基板架2。An apparatus characterized by the
所有已揭露特徵(作為單項特徵或特徵組合)皆為發明本質所在。故本申請之揭露內容亦包含相關/所附優先權檔案(先申請案的副本)所揭露之全部內容,該等檔案所述特徵亦一併納入本申請之申請專利範圍。附屬項以其特徵對本發明針對先前技術之改良方案的特徵予以說明(即使不含相關請求項之特徵),其目的主要在於在該等請求項基礎上進行分案申請。每個請求項中所給出的發明可進一步具有前述說明中給出的、特別是以符號標示且/或在符號說明中給出的特徵中之一或數項。本發明亦有關於如下設計形式:前述說明中所提及之個別特徵不實現,特別是對於具體用途而言為非必需的或者可被技術上具有相同功效的其他構件所替代之特徵。All disclosed features (either as a single feature or as a combination of features) are essential to the invention. Therefore, the disclosure content of this application also includes all the content disclosed in the related/attached priority file (copy of the previous application), and the features described in these files are also included in the scope of the patent application of this application. The subordinate items describe the features of the improvement scheme of the present invention with respect to the prior art with its features (even if the features of the related claims are not included), and its purpose is mainly to file divisional applications on the basis of these claims. The invention given in each claim may further have one or more of the features given in the preceding description, in particular indicated by symbols and/or given in the description of symbols. The invention also relates to designs in which individual features mentioned in the preceding description are not implemented, in particular features which are not necessary for a specific application or which can be replaced by other technically equivalent components.
1:基板處理裝置,反應器
2:基板架
2':頂側
3:氣體入口構件
3':排氣口
4:氣體輸送管線
5:製程室
6:冷卻裝置
7:基板
8:背側
8':拱起區域
9:前側
10:基板支架
11:結構元件,彈性體
12:結構元件,墊子
13:結構元件,纖維,柱
14:結構元件,突出部
15:結構元件,肋部
15a:結構元件
15b:結構元件
15c:結構元件
15d:結構元件
15e:結構元件
15f:結構元件
16:氣體輸送管線
17:空腔
18:包裹物
19:容積
20:空間
21:側壁
22:側壁
23:支承面
24:底腳,底腳區域
25:襯墊
26:發泡體
27:容積,凝膠體
28:包裹物
29:凝膠
30:保持構件
31:遮罩
A:距離
B:寬度
H:高度
L:長度1: Substrate processing device, reactor
2: Substrate holder
2': top side
3: Gas inlet components
3': exhaust port
4: Gas delivery line
5: Process room
6: Cooling device
7: Substrate
8: back side
8': Arch area
9: Front side
10: Substrate bracket
11: Structural elements, elastomers
12: Structural elements, cushions
13: Structural elements, fibers, columns
14: Structural elements, protrusions
15: Structural elements,
下面結合附圖對本發明之實施例進行詳細說明。其中: 圖1為基板處理裝置之示意性剖視圖, 圖2為圖1中之局部Ⅱ的放大圖, 圖3為對應於圖2的局部圖,但採用根據先前技術之配置, 圖4為根據圖1中之線Ⅳ-Ⅳ的剖視圖,形式為貼靠於基板架2上之基板7的俯視圖, 圖5為第一實施例之基板架2之類似於圖4的俯視圖,但基板7係被移除, 圖6為根據圖4中之線Ⅵ-Ⅵ的剖視圖, 圖7為第二實施例之對應於圖5的視圖, 圖8為第三實施例之包含結構元件11的基板架2之頂側2'的局部立體圖, 圖9為第四實施例之類似於圖6的剖視圖, 圖10為第五實施例之類似於圖8的立體圖, 圖11顯示第五實施例之不同結構元件15a至15f, 圖12為第六實施例之類似於圖9的視圖,其中結構元件13具有紗線、纖維或絨毛的形式, 圖13為對應於圖12的視圖,但顯示經結構元件13承載之基板7, 圖14為本發明之第七實施例之類似於圖9的視圖,其中結構元件14係由襯墊25之突出部構成, 圖15為第八實施例之類似於圖9的剖視圖,其中基板支架10係由發泡體26構成,以及 圖16為對應於圖15的視圖,其中基板支架10為凝膠體27,其中在包裹物28之容積中設有凝膠29。The embodiments of the present invention will be described in detail below with reference to the accompanying drawings. in: FIG. 1 is a schematic cross-sectional view of a substrate processing apparatus, Fig. 2 is an enlarged view of part II in Fig. 1, Fig. 3 is a partial view corresponding to Fig. 2, but with a configuration according to the prior art, FIG. 4 is a sectional view according to the line IV-IV in FIG. 1 in the form of a top view of the substrate 7 resting on the substrate holder 2, FIG. 5 is a top view similar to FIG. 4 of the substrate holder 2 of the first embodiment, but with the substrate 7 removed, Fig. 6 is a sectional view according to the line VI-VI in Fig. 4, Fig. 7 is a view corresponding to Fig. 5 of the second embodiment, FIG. 8 is a partial perspective view of the top side 2 ′ of the substrate frame 2 including the structural elements 11 according to the third embodiment, Fig. 9 is a sectional view similar to Fig. 6 of the fourth embodiment, Fig. 10 is a perspective view similar to Fig. 8 of the fifth embodiment, FIG. 11 shows different structural elements 15a to 15f of the fifth embodiment, Figure 12 is a view similar to Figure 9 of the sixth embodiment, wherein the structural elements 13 are in the form of yarns, fibers or fluff, Fig. 13 is a view corresponding to Fig. 12, but showing the substrate 7 carried by the structural element 13, FIG. 14 is a view similar to FIG. 9 of the seventh embodiment of the present invention, wherein the structural element 14 is formed by the protrusion of the pad 25, FIG. 15 is a cross-sectional view similar to FIG. 9 of the eighth embodiment, wherein the substrate holder 10 is formed of the foam body 26, and FIG. 16 is a view corresponding to FIG. 15 , wherein the substrate holder 10 is a gel body 27 with a gel 29 provided in the volume of the wrap 28 .
2:基板架 2: Substrate holder
2':頂側 2': top side
6:冷卻裝置 6: Cooling device
10:基板支架 10: Substrate bracket
11:結構元件,彈性體 11: Structural elements, elastomers
16:氣體輸送管線 16: Gas delivery line
20:空間 20: Space
21:側壁 21: Sidewall
22:側壁 22: Sidewall
23:支承面 23: bearing surface
24:底腳,底腳區域 24: Foot, foot area
A:距離 A: distance
B:寬度 B: width
H:高度 H: height
L:長度 L: length
Claims (18)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102020109265.2 | 2020-04-02 | ||
DE102020109265.2A DE102020109265A1 (en) | 2020-04-02 | 2020-04-02 | Substrate holder with an elastic substrate support |
Publications (1)
Publication Number | Publication Date |
---|---|
TW202145433A true TW202145433A (en) | 2021-12-01 |
Family
ID=75581486
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW110112204A TW202145433A (en) | 2020-04-02 | 2021-04-01 | Substrate holder having an elastic substrate support |
Country Status (3)
Country | Link |
---|---|
DE (1) | DE102020109265A1 (en) |
TW (1) | TW202145433A (en) |
WO (1) | WO2021198355A2 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102021118568A1 (en) | 2021-07-19 | 2023-01-19 | VON ARDENNE Asset GmbH & Co. KG | Process for a substrate carrier, a substrate carrier and a vacuum arrangement |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5199483A (en) | 1991-05-15 | 1993-04-06 | Applied Materials, Inc. | Method and apparatus for cooling wafers |
AU6962196A (en) * | 1995-09-01 | 1997-03-27 | Advanced Semiconductor Materials America, Inc. | Wafer support system |
US5605574A (en) | 1995-09-20 | 1997-02-25 | Kabushiki Kaisha Toshiba | Semiconductor wafer support apparatus and method |
JP4441158B2 (en) | 2002-02-19 | 2010-03-31 | オリンパス株式会社 | Board holder |
US7232694B2 (en) | 2004-09-28 | 2007-06-19 | Advantech Global, Ltd. | System and method for active array temperature sensing and cooling |
US20090232983A1 (en) | 2004-12-10 | 2009-09-17 | Koninklijke Philips Electronics, N.V. | Substrate temperature control for combustion chemical vapor deposition |
JP4471848B2 (en) | 2005-01-06 | 2010-06-02 | 神港精機株式会社 | Substrate holding device |
US20100247804A1 (en) | 2009-03-24 | 2010-09-30 | Applied Materials, Inc. | Biasable cooling pedestal |
DE102011078673B4 (en) | 2011-07-05 | 2015-10-01 | Von Ardenne Gmbh | Method and device for vacuum treatment of substrates |
TWI582256B (en) | 2013-02-04 | 2017-05-11 | 愛發科股份有限公司 | Thin substrate processing apparatus |
DE102015118765A1 (en) | 2014-11-20 | 2016-06-09 | Aixtron Se | Device for coating a large-area substrate |
CN110172683A (en) * | 2019-06-27 | 2019-08-27 | 云谷(固安)科技有限公司 | Heating mechanism, plasma chamber and the method to form a film on substrate |
-
2020
- 2020-04-02 DE DE102020109265.2A patent/DE102020109265A1/en active Pending
-
2021
- 2021-03-31 WO PCT/EP2021/058475 patent/WO2021198355A2/en active Application Filing
- 2021-04-01 TW TW110112204A patent/TW202145433A/en unknown
Also Published As
Publication number | Publication date |
---|---|
WO2021198355A3 (en) | 2021-12-23 |
WO2021198355A2 (en) | 2021-10-07 |
DE102020109265A1 (en) | 2021-10-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100427455B1 (en) | Passive gas substrate thermal conditioning apparatus and method | |
TW571382B (en) | Electrostatic chuck and substrate processing apparatus | |
JP5639712B2 (en) | Substrate susceptor and vapor deposition apparatus having the same | |
US8758511B2 (en) | Film forming apparatus and vaporizer | |
TW202145433A (en) | Substrate holder having an elastic substrate support | |
JP6647301B2 (en) | CVD or PVD reactor for large area substrate coating | |
JP2004076150A (en) | Thin film forming system | |
KR20110100616A (en) | Shadow mask held magnetically on a substrate support | |
TW201906069A (en) | Substrate support device | |
KR20070021077A (en) | Active cooling substrate support | |
JP7473700B2 (en) | Organic Film Forming Equipment | |
CN110573647B (en) | Evaporation source and film forming apparatus | |
JP5184091B2 (en) | Method and apparatus for non-contact conveying or supporting glass or glass ceramic | |
JPWO2010016421A1 (en) | Heat treatment apparatus and heat treatment method | |
KR100406815B1 (en) | Plasma display device | |
JP2000303182A (en) | Chemical vapor deposition device | |
KR101206725B1 (en) | Substrate processing apparatus in which buffer insulator is insulted in gap between different potential surfaces | |
JP2018511695A (en) | Large area substrate coating equipment | |
JP2013187318A (en) | In-line type plasma cvd apparatus | |
CN111627830A (en) | Gas supply unit of substrate processing apparatus and substrate processing apparatus | |
US20020083898A1 (en) | Susceptor with bi-metal effect | |
KR102581325B1 (en) | Batch type atomic layer deposition apparatus | |
JP4467730B2 (en) | Substrate heating device | |
TW202038375A (en) | Handling and processing double-sided devices on fragile substrates | |
JP7329034B2 (en) | coating equipment |