TW202144884A - Pixel structure having the first width greater than or equal to the second width to improve the light penetration of the pixel structure - Google Patents

Abstract

The present invention provides a pixel structure using a common electrode to be arranged above a pixel electrode. The common electrode is provided with a first slit. The first slit has a first edge and a second edge, and there is a first width between the first edge and the second edge. The pixel electrode has a first pixel edge located between the first edge and the second edge. There is a second width between the second edge and the first pixel edge. The first width is greater than or equal to the second width to improve the light penetration of the pixel structure.

Description

pixel structure

The present invention relates to a pixel structure, in particular to a panel pixel structure for improving light transmittance.

Thin film transistor liquid crystal display (often referred to as TFT-LCD) is a type of most liquid crystal displays. It uses thin film transistor technology to improve image quality. Thin film transistor liquid crystal displays are collectively referred to as LCD, which is a kind of Active matrix LCDs are often used in televisions, flat panel displays and projectors.

The thin film transistor liquid crystal display panel can be regarded as a layer of liquid crystal sandwiched between two glass substrates, the upper glass substrate is with color filters, and the lower glass has transistors embedded on it. When the current passes through the transistor, the electric field changes, causing the liquid crystal molecules to deflect, thereby changing the polarization of the light, and then using the polarizer to determine the light and dark state of the pixels. In addition, the upper glass is bonded with the color filter, so that each pixel contains three colors of red, blue and green. These red, blue and green pixels constitute the image on the panel. The thin film transistor liquid crystal display panel There are many kinds of products used. Among them, there are more and more products using Fringe Field Switching (FFS, Fringe Field Switching) wide viewing angle technology, and the development will become more and more frequent in the future.

Fringe Field Switching (FFS, Fringe Field Switching) wide viewing angle technology, also known as Fringe Field Switching wide viewing angle technology, this wide viewing angle technology is an extension of the lateral electric field effect (IPS, In Plane Switching) display technology, which has low power consumption. Electricity, high transmittance, high brightness, fast response, no color shift, high color reproduction and other characteristics; compared with the traditional display technology, the fringe electric field switching wide viewing angle technology has the advantages of lower driving voltage, larger viewing angle, and faster response. Compared with the horizontal electric field effect display technology, the fringe electric field switching wide viewing angle technology is more power-saving, and has the advantages of higher transmittance and higher resolution.

However, in the prior art, there has not been a more detailed and overall study on the position of the pixel electrode corresponding to the electrode slit to improve the fringe field switching (FFS) wide viewing angle technology display, but there are doubts in the previous design concept, but there is no such Therefore, the light spot problem (Mura) caused by uneven light output on the panel optics has insufficient penetration, which continues to affect the performance and reliability of the panel manufacturers' end products. Therefore, the panel industry urgently needs a solution that can improve the Panel pixel structure design for light penetration.

In view of the above-mentioned problems of the prior art, the present invention provides a pixel structure in which the edge of the pixel electrode is disposed inside the slit of the common electrode, the slit has a first width, and the edge of the pixel electrode is in contact with the slit of the common electrode. The edge of the slit has a second width, and the first width is greater than or equal to the second width, and this structure provides a design for improving light penetration.

An object of the present invention is to provide a pixel structure in which the edge of the pixel electrode is disposed inside the slit of the common electrode, the slit of the common electrode has a first width, and the edge of the pixel electrode is connected to the slit of the common electrode. The edge of the slit has a second width, wherein the first width is greater than or equal to the second width, and the light transmittance is improved by this structure.

In order to achieve the above-mentioned objects and effects, the present invention provides a pixel structure, which includes: a substrate, a first data line, a second data line, a pixel electrode and a common electrode, the first data line Lines are disposed on a surface of the substrate, the second data lines are disposed on the surface of the substrate corresponding to the first data lines, and the pixel electrodes are disposed on the surface of the substrate and located on the first data lines Between the second data line, the common electrode is disposed above one of the pixel electrodes, the common electrode is disposed with a first slit, and the first slit is located on one side of the first data line; wherein, the The first slit has a first edge close to the first data line and a second edge away from the first data line, and has a first width between the first edge and the second edge, and the pixel The electrode has a first pixel edge located between the first edge and the second edge, a second width between the second edge and the first pixel edge, and the first width is greater than or equal to the second width ;Using this structure to reduce the problem of decrease in transmittance caused by process deviation or setting error of the panel.

In an embodiment of the present invention, the percentage of the second width divided by the first width is greater than or equal to 45% and less than or equal to 100%.

In an embodiment of the present invention, the first width is greater than or equal to 2 μm and less than or equal to 8 μm.

In an embodiment of the present invention, the common electrode is further provided with a second slit, and the second slit is provided between the first slit and the second data line.

In an embodiment of the present invention, the second slit has a third edge close to the second data line and a fourth edge away from the second data line, and the third edge and the fourth edge are a third width between the pixel electrodes, a second pixel edge located between the third edge and the fourth edge, and a fourth width between the fourth edge and the second pixel edge, The third width is greater than or equal to the fourth width.

In an embodiment of the present invention, the percentage of dividing the fourth width by the third width is greater than or equal to 45% and less than or equal to 100%.

In an embodiment of the present invention, the common electrode is further provided with at least one middle slit, and the at least one middle slit is arranged between the first slit and the second slit.

In an embodiment of the present invention, the third width is greater than or equal to 2 μm and less than or equal to 8 μm.

In order to make your examiners have a further understanding and understanding of the features of the present invention and the effects achieved, I would like to assist with the examples and cooperation descriptions, and the descriptions are as follows:

The present invention provides a pixel structure, wherein a first pixel edge of a pixel electrode is disposed inside a first slit of a common electrode, the first slit has a first width, and the first picture element The plain edge and the edge of the first slit have a second width, and the first width is greater than or equal to the second width, and this structure solves the problem of insufficient light transmittance of the conventional panel.

Please refer to FIG. 1, which is a schematic structural diagram of an embodiment of the present invention. As shown in the figure, it is a pixel structure 1, which includes a substrate 10, a first data line 20, a second data line 30, A pixel electrode 40 and a common electrode 50; wherein, the first data line 20, the second data line 30 and the pixel electrode 40 are disposed on a surface 12 of the substrate 10, and the first data line 20 and the pixel electrode 40 can be The line 20 , the second data line 30 , a pixel electrode 40 and a common electrode 50 are arranged in plural and spaced apart to form an overall panel structure; in this embodiment, the pixel structure 1 is a fringe electric field switching (FFS) ) display panel.

Referring to FIG. 1 again, as shown in the figure, in this embodiment, the first data line 20 is disposed on the surface 12 of the substrate 10 , and the position of the second data line 30 corresponding to the first data line 10 is disposed at On the surface 12 of the substrate 10, the two are symmetrical to each other, the pixel electrode 40 is disposed on the surface 12 of the substrate 10, and is located between the first data line 20 and the second data line 30, The common electrode 50 is disposed above one of the pixel electrodes 40 . The common electrode 50 is provided with a first slit 52 corresponding to the position of the pixel electrode 40 , and the first slit 52 is located between the first data lines 20 . One side, which is the slit of the common electrode 50 closest to the first data line 20 , the first slit 52 has a first edge 522 close to the first data line 20 and a distance away from the first data line 20 A second edge 524 , that is, the second edge 524 is closer to the second data line 30 than the first edge 522 .

Referring to FIG. 1 and FIG. 2 again, FIG. 2 is an enlarged schematic view of the first slit structure according to the embodiment of the present invention. As shown in the figure, in this embodiment, the first edge 522 and the second edge 524 There is a first width W1 therebetween, and a side of the pixel electrode 40 close to the first data line 20 has a first pixel edge 402, and the first pixel edge 402 is located between the first edge 522 and the first pixel edge 402. Between the two edges 524, there is a second width W2 between the second edge 524 and the first pixel edge 402. The conventional display panel has the pixel electrode 40 or the common electrode 50 during the manufacturing process. The deviation in the manufacturing process will cause defects in the display of the panel. Therefore, in order to prevent the position of the pixel electrode 40 or the common electrode 50 from shifting and affecting the display quality of the panel, the first width W1 is further defined in this embodiment. greater than or equal to the second width W2; wherein, the first width W1 of the first slit 52 may be greater than or equal to 2 μm and less than or equal to 8 μm.

，如圖所示，當S%於45%時，其穿透率T%約為93%，達到人眼難以分辨差異之光線穿透率，而當S%於100%時，穿透率T%開始些微下降並呈現趨緩，由此可知於一實施例中，該第二寬度W2除以該第一寬度W1之百分比大於等於45%並小於等於100%時，其可達到較佳之功效，再參閱圖示，當S%於70%時，其穿透率T%可達到接近100%，因此於另一實施例中，該第二寬度W2除以該第一寬度W1之百分比大於等於70%並小於等於100%，其可達到更佳之功效。Please refer to FIG. 3, which is a schematic diagram of the variation of the width and the transmittance according to the embodiment of the present invention. As shown in the figure, the conventional display panel has the pixel electrode 40 or the common electrode 50 during the manufacturing process. The deviation in the manufacturing process will cause defects in the display of the panel. Therefore, in order to prevent the position of the pixel electrode 40 or the common electrode 50 from shifting and affecting the display quality of the panel, the pixel electrode 40 is further defined in this embodiment. The relationship with the edge of the common electrode 50, in order to obtain effective data and information, the first width W1 of 3 μm is used as a standard for analysis in this embodiment. As shown in FIG. 3, the pixel electrode 40 is in the first narrow The light transmittance of the slit 52 is T%, and the percentage of the second width W2 divided by the first width W1 is S%, that is, formula (1):

, as shown in the figure, when S% is 45%, its transmittance T% is about 93%, reaching the light transmittance that is difficult for human eyes to distinguish the difference, and when S% is 100%, the transmittance T% % begins to decrease slightly and then tends to slow down. It can be seen that in one embodiment, when the percentage of the second width W2 divided by the first width W1 is greater than or equal to 45% and less than or equal to 100%, it can achieve a better effect. Referring to the figure again, when S% is 70%, its transmittance T% can reach close to 100%. Therefore, in another embodiment, the percentage of the second width W2 divided by the first width W1 is greater than or equal to 70 % and less than or equal to 100%, it can achieve better efficacy.

In this embodiment, the first pixel edge 402 of the pixel electrode 40 is disposed between the two edges of the first slit 52 of the common electrode 50, so that the first slit 52 has the first width W1, the first pixel edge 402 and the second edge 524 of the first slit 52 have the second width W2, the first width W1 is greater than or equal to the second width W2 to improve light penetration, and Reduce the problem of uneven light output, thereby improving the display quality of the panel.

Please refer to FIG. 4 , which is a schematic diagram of another structure of the embodiment of the present invention. As shown in the figure, this embodiment is based on the structure of the above-mentioned embodiment, and a second slit 54 is further arranged in the common electrode 50 . Two slits 54 are disposed between the first slit 52 and the second data line 30, the second slit 54 is located on one side of the second data line 30, and the common electrode 50 is closest to the second data line 30 The slit of the data line 30, the second slit 54 has a third edge 542 close to the second data line 30 and a fourth edge 544 far from the second data line 30, that is, the third edge 544 is relatively The fourth edge 542 is close to the first data line 20 .

Referring to FIG. 4 and FIG. 5 again, FIG. 5 is an enlarged schematic view of the second slit structure according to the embodiment of the present invention. As shown in the figure, in this embodiment, the third edge 542 and the fourth edge 544 There is a third width W3 therebetween, and a side of the pixel electrode 40 close to the second data line 30 has a second pixel edge 404, the second pixel edge 404 is located between the third edge 542 and the first pixel edge 404 Between the four edges 544, there is a fourth width W4 between the fourth edge 544 and the second pixel edge 404. The relationship between the first slit 52 and the pixel electrode 40 is the same as that of the second slit. The third width W3 of 54 is greater than or equal to the fourth width W4; in this embodiment, the third width W3 may be greater than or equal to 2 μm and less than or equal to 8 μm.

，該第二狹縫54與該第二畫素邊緣404之寬度及光線穿透率的關係，與上述該第一狹縫52之實施例相同，故不再贅述。Continuing from the above, in this embodiment, the relationship between the third width W3 and the fourth width W4 corresponds to the embodiment of the first slit 52 described above, which is that the third width W3 corresponds to the first width W1, and the The fourth width W4 corresponds to the second width W2. As shown in Figure 3, the percentage of the fourth width W4 divided by the third width W3 is S%, that is, formula (2):

, the relationship between the width of the second slit 54 and the second pixel edge 404 and the light transmittance is the same as that of the first slit 52 in the above-mentioned embodiment, so it is not repeated here.

Continuing from the above, in this embodiment, the first width W1 of the first slit 52 and the third width W3 of the second slit 54 may be the same or different. For example, the first width W1 is 3 μm, and the The third width W3 is 4 μm, or both the first width W1 and the third width W3 are 5 μm, which is not limited in the present invention.

Continuing from the above, in this embodiment, the common electrode 50 is further provided with at least one middle slit 56 , the at least one middle slit 56 is arranged between the first slit 52 and the second slit 54 , the at least one middle slit 56 is The number of the middle slits 56 can be increased according to the design of the panel. In this embodiment, one middle slit 56 is used as an example, and the present invention is not limited thereto; wherein, the at least one middle slit 56 in this embodiment is for light from the pixel The electrode 40 passes through the main area of the common electrode 50 , that is, the main light transmission source of the pixel structure 1 .

To sum up, according to the present invention, there will be more and more products using the Fringe Field Switching (FFS, Fringe Field Switching) wide viewing angle technology in the future, the market popularity will become more and more common, and the resolution will continue to increase. , to define more detailed design specifications for the products of the subsequent fringe electric field switching wide viewing angle technology, in order to avoid the problem of the factory process deviation or the penetration drop caused by the design, that is, a pixel structure provided by the present invention, which The edge of the pixel electrode is arranged on the inner side of the slit included in the common electrode near the data line, so as to define the first width of the slit of the common electrode and the difference between the edge of the pixel electrode and the edge of the slit. The second width improves the light penetration, and solves the problem of insufficient light penetration caused by uneven light output (Mura) of the conventional panel.

Therefore, the present invention is truly novel, progressive and available for industrial use, and it should meet the requirements for patent application under my country's patent law.

However, the above is only an embodiment of the present invention, and is not intended to limit the scope of the present invention. Therefore, all the equivalent changes and modifications made in accordance with the shape, structure, feature and spirit described in the scope of the patent application of the present invention, All should be included in the scope of the patent application of the present invention.

1: Pixel structure 10: Substrate 12: Surface 20: The first data line 30: Second data line 40: pixel electrode 402: First pixel edge 404: Second pixel edge 50: Common electrode 52: First slit 522: First Edge 524: Second Edge 54: Second slit 542: Third Edge 544: Fourth Edge 56: Middle slit W1: first width W2: Second width W3: third width W4: Fourth width

Figure 1: It is a schematic structural diagram of an embodiment of the present invention; Figure 2: It is an enlarged schematic view of the first slit structure according to an embodiment of the present invention; Figure 3: It is a schematic diagram of the variation of width and penetration according to an embodiment of the present invention; Figure 4: It is a schematic diagram of other structures of an embodiment of the present invention; and Fig. 5 is an enlarged schematic view of the second slit structure according to an embodiment of the present invention.

1: Pixel structure

10: Substrate

12: Surface

20: The first data line

30: Second data line

40: pixel electrode

402: First pixel edge

50: Common electrode

52: First slit

522: First Edge

524: Second Edge

54: Second slit

W1: first width

W2: Second width

Claims (8)

A pixel structure that includes: a substrate; a first data line disposed on a surface of the substrate; a second data line disposed on the surface of the substrate corresponding to the first data line; a pixel electrode disposed on the surface of the substrate and between the first data line and the second data line; and a common electrode disposed above one of the pixel electrodes, a first slit disposed on the common electrode, and the first slit is located on one side of the first data line; Wherein, the first slit has a first edge close to the first data line and a second edge away from the first data line, and a first width is formed between the first edge and the second edge, The pixel electrode has a first pixel edge located between the first edge and the second edge, a second width between the second edge and the first pixel edge, and the first width is greater than or equal to the second width. The pixel structure of claim 1, wherein the percentage of the second width divided by the first width is greater than or equal to 45% and less than or equal to 100%. The pixel structure of claim 1, wherein the first width is greater than or equal to 2 μm and less than or equal to 8 μm. The pixel structure of claim 1, wherein the common electrode is further provided with a second slit, and the second slit is provided between the first slit and the second data line. The pixel structure of claim 4, wherein the second slit has a third edge close to the second data line and a fourth edge far from the second data line, and the third edge and the first edge There is a third width between the four edges, the pixel electrode has a second pixel edge located between the third edge and the fourth edge, and there is a first edge between the fourth edge and the second pixel edge Four widths, the third width is greater than or equal to the fourth width. The pixel structure of claim 5, wherein a percentage of the fourth width divided by the third width is greater than or equal to 45% and less than or equal to 100%. The pixel structure of claim 4, wherein the common electrode is further provided with at least one middle slit, and the at least one middle slit is arranged between the first slit and the second slit. The pixel structure of claim 5, wherein the third width is greater than or equal to 2 μm and less than or equal to 8 μm.

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