CN113721393A - Pixel structure - Google Patents

Pixel structure Download PDF

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Publication number
CN113721393A
CN113721393A CN202010778409.1A CN202010778409A CN113721393A CN 113721393 A CN113721393 A CN 113721393A CN 202010778409 A CN202010778409 A CN 202010778409A CN 113721393 A CN113721393 A CN 113721393A
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Prior art keywords
edge
width
slit
pixel
data line
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CN202010778409.1A
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Chinese (zh)
Inventor
方翼铭
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Giantplus Technology Co Ltd
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Giantplus Technology Co Ltd
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line

Abstract

The invention provides a pixel structure, which is arranged above a pixel electrode by utilizing a shared electrode, wherein the shared electrode is provided with a first slit, the first slit is provided with a first edge and a second edge, a first width is arranged between the first edge and the second edge, the pixel electrode is provided with a first pixel edge positioned between the first edge and the second edge, a second width is arranged between the second edge and the first pixel edge, and the light penetration degree of the pixel structure is improved by using the first width to be more than or equal to the second width.

Description

Pixel structure
Technical Field
The present invention relates to a pixel structure, and more particularly, to a panel pixel structure for improving light transmittance.
Background
A Thin film transistor liquid crystal display (TFT-LCD) is one of the most commonly used liquid crystal displays, and uses TFT technology to improve image quality, and is commonly referred to as an LCD, which is an active matrix LCD and is commonly used in televisions, flat panel displays, and projectors.
The thin film transistor liquid crystal display panel can be seen as two glass substrates sandwiching a layer of liquid crystal, the upper glass substrate is connected with a color filter, and the lower glass substrate has a transistor embedded thereon. When the current passes through the transistor, the electric field changes to cause the liquid crystal molecules to deflect, so as to change the polarization of the light, and then the bright and dark states of the pixel are determined by utilizing the polaroid. In addition, the upper glass layer is bonded with the color filter to form each pixel containing three colors of red, blue and green, and the pixels emitting the red, blue and green colors constitute an image picture on the panel.
A Fringe Field Switching (FFS) wide viewing angle technology, also known as a Fringe Field Switching (Fringe Field Switching) wide viewing angle technology, which is extended from an In Plane Switching (IPS) display technology and has characteristics of low power consumption, high light transmittance, high brightness, fast response, no color cast, high color reducibility, and the like; compared with the traditional display technology, the fringe field switching wide-view technology has the advantages of low driving voltage, larger visual angle, high response speed, higher brightness and the like.
However, the conventional art has not studied the position of the pixel electrode corresponding to the electrode slit in the wide viewing angle display for improving Fringe Field Switching (FFS), but the prior design concept is doubtful but without this specification, so the transmittance generated by the Mura problem caused by the light non-uniformity in the panel optics is insufficient, which continuously affects the performance and reliability of the terminal products of the panel manufacturers, and thus there is a need for a design of the panel pixel structure for improving the light transmittance in the panel industry.
In view of the above-mentioned problems of the prior art, the present invention provides a pixel structure, wherein the edge of a pixel electrode is disposed inside a slit of a common electrode, the slit has a first width, the edge of the pixel electrode and the edge of the slit have a second width, and the first width is greater than or equal to the second width, so as to provide a design for improving light transmittance.
[ summary of the invention ]
An objective of the present invention is to provide a pixel structure, wherein an edge of a pixel electrode is disposed inside a slit of a common electrode, the slit of the common electrode has a first width, and an edge of the pixel electrode and an edge of the slit have a second width, wherein the first width is greater than or equal to the second width, so as to improve light transmittance.
To achieve the above-mentioned objects and advantages, the present invention provides a pixel structure, which comprises: the display device comprises a substrate, a first data line, a second data line, a pixel electrode and a common electrode, wherein the first data line is arranged on one surface of the substrate, the second data line is arranged on the surface of the substrate corresponding to the first data line, the pixel electrode is arranged on the surface of the substrate and positioned between the first data line and the second data line, the common electrode is arranged above the pixel electrode, the common electrode is provided with a first slit, and the first slit is positioned on one side of the first data line; the first slit is provided with a first edge close to the first data line and a second edge far away from the first data line, a first width is arranged between the first edge and the second edge, the pixel electrode is provided with a first pixel edge positioned between the first edge and the second edge, a second width is arranged between the second edge and the first pixel edge, and the first width is larger than or equal to the second width; the structure can reduce the problem of reduced transmittance caused by process deviation or setup error of the panel.
In an embodiment of the invention, a percentage of the second width divided by the first width is greater than or equal to 45% and less than or equal to 100%.
In an embodiment of the present invention, the first width is greater than or equal to 2 μm and less than or equal to 8 μm.
In an embodiment of the invention, the common electrode further has a second slit disposed between the first slit and the second data line.
In an embodiment of the invention, the second slit has a third edge close to the second data line and a fourth edge far from the second data line, and a third width is provided between the third edge and the fourth edge, the pixel electrode has a second pixel edge located between the third edge and the fourth edge, a fourth width is provided between the fourth edge and the second pixel edge, and the third width is greater than or equal to the fourth width.
In an embodiment of the invention, a percentage of the fourth width divided by the third width is greater than or equal to 45% and less than or equal to 100%.
In an embodiment of the invention, the common electrode further has at least one middle slit disposed between the first slit and the second slit.
In an embodiment of the present invention, the third width is greater than or equal to 2 μm and less than or equal to 8 μm.
Disclosure of Invention
An objective of the present invention is to provide a pixel structure, wherein an edge of a pixel electrode is disposed inside a slit of a common electrode, the slit of the common electrode has a first width, and an edge of the pixel electrode and an edge of the slit have a second width, wherein the first width is greater than or equal to the second width, so as to improve light transmittance.
To achieve the above-mentioned objects and advantages, the present invention provides a pixel structure, which comprises: the display device comprises a substrate, a first data line, a second data line, a pixel electrode and a common electrode, wherein the first data line is arranged on one surface of the substrate, the second data line is arranged on the surface of the substrate corresponding to the first data line, the pixel electrode is arranged on the surface of the substrate and positioned between the first data line and the second data line, the common electrode is arranged above the pixel electrode, the common electrode is provided with a first slit, and the first slit is positioned on one side of the first data line; the first slit is provided with a first edge close to the first data line and a second edge far away from the first data line, a first width is arranged between the first edge and the second edge, the pixel electrode is provided with a first pixel edge positioned between the first edge and the second edge, a second width is arranged between the second edge and the first pixel edge, and the first width is larger than or equal to the second width; the structure can reduce the problem of reduced transmittance caused by process deviation or setup error of the panel.
In an embodiment of the invention, a percentage of the second width divided by the first width is greater than or equal to 45% and less than or equal to 100%.
In an embodiment of the present invention, the first width is greater than or equal to 2 μm and less than or equal to 8 μm.
In an embodiment of the invention, the common electrode further has a second slit disposed between the first slit and the second data line.
In an embodiment of the invention, the second slit has a third edge close to the second data line and a fourth edge far from the second data line, and a third width is provided between the third edge and the fourth edge, the pixel electrode has a second pixel edge located between the third edge and the fourth edge, a fourth width is provided between the fourth edge and the second pixel edge, and the third width is greater than or equal to the fourth width.
In an embodiment of the invention, a percentage of the fourth width divided by the third width is greater than or equal to 45% and less than or equal to 100%.
In an embodiment of the invention, the common electrode further has at least one middle slit disposed between the first slit and the second slit.
In an embodiment of the present invention, the third width is greater than or equal to 2 μm and less than or equal to 8 μm.
Drawings
FIG. 1: which is a schematic structural diagram of an embodiment of the present invention;
FIG. 2: which is an enlarged schematic view of a first slit structure of an embodiment of the present invention;
FIG. 3: it is a schematic diagram of the width and penetration variation of the embodiment of the present invention;
FIG. 4: which is another schematic structural diagram of an embodiment of the present invention; and
FIG. 5: which is an enlarged schematic view of the second slit structure of the embodiment of the invention.
[ brief description of the drawings ]
1 pixel structure
10 base plate
12 surface
20 first data line
30 second data line
40 pixel electrode
402 first pixel edge
404 second pixel edge
50 common electrode
52 first slit
522 first edge
524 second edge
54 second slit
542 third edge
544 fourth edge
56 intermediate slit
W1 first width
W2 second width
W3 third Width
W4 fourth Width
Detailed Description
In order to provide a further understanding and appreciation for the structural features and advantages achieved by the present invention, the following detailed description of the presently preferred embodiments is provided:
the invention provides a pixel structure, which is characterized in that a first pixel edge of a pixel electrode is arranged at the inner side of a first slit of a common electrode, the first slit has a first width, the first pixel edge and the edge of the first slit have a second width, and the first width is larger than or equal to the second width, so that the problem of insufficient light penetration of a conventional panel is solved.
Referring to fig. 1, which is a schematic structural diagram according to an embodiment of the present invention, as shown in the figure, a pixel structure 1 includes a substrate 10, a first data line 20, a second data line 30, a pixel electrode 40, and a common electrode 50; wherein, the first data line 20, the second data line 30 and the pixel electrode 40 are disposed on a surface 12 of the substrate 10, and the first data line 20, the second data line 30, the pixel electrode 40 and the common electrode 50 are disposed and spaced to form an integral panel structure; in the present embodiment, the pixel structure 1 is a Fringe Field Switching (FFS) display panel.
Referring again to fig. 1, in the present embodiment, the first data line 20 is disposed on the surface 12 of the substrate 10, the second data line 30 is disposed on the surface 12 of the substrate 10 at a position corresponding to the first data line 20, such that the two are symmetrical to each other, the pixel electrode 40 is disposed on the surface 12 of the substrate 10 and between the first data line 20 and the second data line 30, and the common electrode 50 is disposed above the pixel electrode 40, the common electrode 50 is provided with a first slit 52 corresponding to the pixel electrode 40, the first slit 52 is located at one side of the first data line 20, which is the slit of the common electrode 50 closest to the first data line 20, the first slit 52 has a first edge 522 close to the first data line 20 and a second edge 524 far from the first data line 20, that is, the second edge 524 is closer to the second data line 30 than the first edge 522.
Referring to fig. 1 and 2 again, fig. 2 is an enlarged schematic view of a first slit structure according to an embodiment of the present invention, as shown in the figure, in the present embodiment, the first edge 522 and the second edge 524 have a first width W1 therebetween, and a side of the pixel electrode 40 adjacent to the first data line 20 has a first pixel edge 402, the first pixel edge 402 is located between the first edge 522 and the second edge 524, the second edge 524 has a second width W2 with the first pixel edge 402, and the conventional display panel has defects in display due to the deviation of the pixel electrode 40 or the common electrode 50 in the manufacturing process, so that in order to prevent the position deviation of the pixel electrode 40 or the common electrode 50, the display quality of the panel is affected, and the first width W1 is more defined to be greater than or equal to the second width W2 in this embodiment; the first width W1 of the first slit 52 may be greater than or equal to 2 μm and less than or equal to 8 μm.
Referring to fig. 3, which is a schematic diagram illustrating changes in width and transmittance according to an embodiment of the present invention, as shown in the drawing, in a conventional display panel, since the pixel electrode 40 or the common electrode 50 may shift during the manufacturing process and cause defects on the display, in order to prevent the position shift of the pixel electrode 40 or the common electrode 50 from affecting the display quality of the panel, in the present embodiment, the edge relationship between the pixel electrode 40 and the common electrode 50 is further defined, in order to obtain valid data and information, the present embodiment uses the first width W1 of 3 μm as a standard for analysis, as shown in fig. 3, the light transmittance of the pixel electrode 40 in the first slit 52 is T%, and the percentage of the second width W2 divided by the first width W1 is S%, which is expressed by the following formula (one):
Figure BDA0002619321050000081
As shown in the figure, when S% is greater than 45%, the transmittance T% is about 93%, which achieves the light transmittance that human eyes cannot distinguish difference, and when S% is greater than 100%, the transmittance T% starts to slightly decrease and becomes slow, so that in one embodiment, the percentage of the second width W2 divided by the first width W1 is greater than or equal to 45% and less than or equal to 100%, which achieves better effect, and referring to the graph, when S% is greater than 70%, the transmittance T% can approach 100%, therefore in another embodiment, the percentage of the second width W2 divided by the first width W1 is greater than or equal to 70% and less than or equal to 100%, which achieves better effect.
In the embodiment, the first pixel edge 402 of the pixel electrode 40 is disposed between two edges of the first slit 52 disposed on the common electrode 50, such that the first slit 52 has the first width W1, and the first pixel edge 402 and the second edge 524 of the first slit 52 have the second width W2, and the first width W1 is greater than or equal to the second width W2, so as to improve the light transmittance and reduce the problem of light non-uniformity, thereby improving the display quality of the panel.
Referring to fig. 4, which is another structural schematic diagram of the embodiment of the present invention, as shown in the structure of the embodiment, in the embodiment, based on the structure of the above embodiment, a second slit 54 is further disposed on the common electrode 50, the second slit 54 is disposed between the first slit 52 and the second data line 30, the second slit 54 is located at one side of the second data line 30, and is a slit of the common electrode 50 closest to the second data line 30, the second slit 54 has a third edge 542 close to the second data line 30 and a fourth edge 544 far from the second data line 30, that is, the third edge 544 is closer to the first data line 20 than the fourth edge 542.
Referring to fig. 4 and 5 again, fig. 5 is an enlarged schematic view of a second slit structure according to an embodiment of the invention, as shown in the figure, in the embodiment, a third width W3 is provided between the third edge 542 and the fourth edge 544, a side of the pixel electrode 40 close to the second data line 30 is provided with a second pixel edge 404, the second pixel edge 404 is located between the third edge 542 and the fourth edge 544, a fourth width W4 is provided between the fourth edge 544 and the second pixel edge 404, the relationship between the first slit 52 and the pixel electrode 40 is the same, and the third width W3 of the second slit 54 is greater than or equal to the fourth width W4; in the present embodiment, the third width W3 may be greater than or equal to 2 μm and less than or equal to 8 μm.
In the present embodiment, the relationship between the third width W3 and the fourth width W4 corresponds to the embodiment of the first slit 52, in which the third width W3 corresponds to the first width W1, the fourth width W4 corresponds to the second width W2, and as shown in fig. 3, the percentage of the fourth width W4 divided by the third width W3 is S%, that is, the expression (two):
Figure BDA0002619321050000091
the relationship between the width of the second slit 54 and the second pixel edge 404 and the light transmittance is the same as that of the first slit 52, and thus is not repeated herein.
In the present embodiment, the first width W1 of the first slit 52 and the third width W3 of the second slit 54 may be the same or different, for example, the first width W1 is 3 μm, the third width W3 is 4 μm, or both the first width W1 and the third width W3 are 5 μm, which is not limited herein.
Continuing from the above, in the present embodiment, the common electrode 50 is further provided with at least one middle slit 56, the at least one middle slit 56 is disposed between the first slit 52 and the second slit 54, the number of the at least one middle slit 56 can be increased along with the design of the panel, the present embodiment takes one middle slit 56 as an example, and the invention is not limited thereto; the at least one middle slit 56 of the present embodiment is a main region where light from the pixel electrode 40 passes through the common electrode 50, i.e. a main light transmission source of the pixel structure 1.
In summary, the present invention provides a pixel structure, which is configured to dispose an edge of a pixel electrode inside a slit near a data line included in a common electrode to define a first width of the slit of the common electrode and a second width of the edge of the pixel electrode and the slit to improve light transmittance, thereby solving a problem of insufficient light transmittance caused by light emission unevenness (Mura) of a conventional panel.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not intended to limit the scope of the present invention, which is defined by the appended claims.

Claims (8)

1. A pixel structure, comprising:
a substrate;
a first data line disposed on a surface of the substrate;
a second data line disposed on the surface of the substrate corresponding to the first data line;
a pixel electrode disposed on the surface of the substrate and between the first data line and the second data line; and
a common electrode disposed above the pixel electrode, the common electrode having a first slit disposed at one side of the first data line;
the first slit has a first edge close to the first data line and a second edge far from the first data line, and a first width is provided between the first edge and the second edge, the pixel electrode has a first pixel edge located between the first edge and the second edge, a second width is provided between the second edge and the first pixel edge, and the first width is larger than or equal to the second width.
2. The pixel structure of claim 1, wherein the percentage of the second width divided by the first width is greater than or equal to 45% and less than or equal to 100%.
3. The pixel structure of claim 1, wherein the first width is greater than or equal to 2 μm and less than or equal to 8 μm.
4. The pixel structure of claim 1, wherein the common electrode further comprises a second slit disposed between the first slit and the second data line.
5. The pixel structure of claim 4, wherein the second slit has a third edge close to the second data line and a fourth edge far from the second data line, and a third width is between the third edge and the fourth edge, the pixel electrode has a second pixel edge between the third edge and the fourth edge, and a fourth width is between the fourth edge and the second pixel edge, and the third width is greater than or equal to the fourth width.
6. The pixel structure of claim 5, wherein a percentage of the fourth width divided by the third width is greater than or equal to 45% and less than or equal to 100%.
7. The pixel structure of claim 4, wherein the common electrode further comprises at least one middle slit disposed between the first slit and the second slit.
8. The pixel structure of claim 3, wherein the third width is greater than or equal to 2 μm and less than or equal to 8 μm.
CN202010778409.1A 2020-05-25 2020-08-05 Pixel structure Pending CN113721393A (en)

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150170981A1 (en) * 2013-12-12 2015-06-18 Chunghwa Picture Tubes, Ltd. Pixel array substrate and display panel
CN106597761A (en) * 2015-10-14 2017-04-26 群创光电股份有限公司 Display panel and electronic apparatus

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI468826B (en) * 2012-10-08 2015-01-11 Au Optronics Corp Pixel array substrate
TWI509337B (en) * 2013-09-16 2015-11-21 Au Optronics Corp Pixel structure and manufacturing method thereof and display panel
CN106950765A (en) * 2016-01-07 2017-07-14 中华映管股份有限公司 Dot structure of liquid crystal display panel and preparation method thereof
CN109765732A (en) * 2017-11-09 2019-05-17 中华映管股份有限公司 Dot structure

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150170981A1 (en) * 2013-12-12 2015-06-18 Chunghwa Picture Tubes, Ltd. Pixel array substrate and display panel
CN106597761A (en) * 2015-10-14 2017-04-26 群创光电股份有限公司 Display panel and electronic apparatus

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