TW202143496A - Photodetector - Google Patents

Abstract

A photodetector includes a transparent support structure, a photodetector unit, an insulating structure, a first electrode, and a second electrode. The photodetector unit includs a first semiconductor layer and a second semiconductor layer. The first semiconductor layer is formed between the second semiconductor layer and the transparent support structure. The insulating structure surrounds the photodetector unit. The first electrode passes through the insulating structure and is electrically connected to the first semiconductor layer, and has a part exposed from a side of the insulating structure. The second electrode is electrically connected to the second semiconductor layer, and has at least one part located on the side of the insulating structure.

Description

Light sensing element

The present invention relates to a light sensing element, and more particularly to a light sensing element with a flip-chip semiconductor structure.

The light sensor element is used to detect the light signal. It uses the energy gap of the IIIA-VA group compound semiconductor material to absorb the photon energy of the incident light to generate electron-hole pairs. In other words, the light sensing element can convert photons into electrons, and convert light signals into electrical signals. The stronger the incident light, the greater the electrical signals generated.

In the conventional technology, as shown in FIG. 1, a conventional light sensing device 200 includes a carrier 202; an n-type semiconductor layer 201 is located on the carrier 202; and a p-type semiconductor layer 203 is located on the first semiconductor layer 201 Above; and an active region 205 is located between the n-type semiconductor layer 201 and the p-type semiconductor layer 203. After the active area 205 of the light sensing element 200 absorbs light of a specific wavelength, the optical signal is converted into an electrical signal, and the electrical signal is output through the wire 204. The light detection area of the light sensor element 200 is proportional to the intensity of the output electrical signal. Because the wire 204 in the prior art shields the light detection area of the light sensor element 200, the light absorption area of the light sensor element 200 is reduced. The output current of the light sensing element 200 is reduced.

According to one of the embodiments of the present invention, a light-sensing element includes a transparent support structure; a light-sensing unit includes a first semiconductor layer and a second semiconductor layer, the first semiconductor layer is located on the second semiconductor layer and the transparent Between the supporting structures; an insulating structure surrounding the light sensing unit; a first electrode that penetrates the insulating structure and is electrically connected to the first semiconductor layer, a part of the first electrode is located on a first side of the insulating structure; and a The second electrode is electrically connected to the second semiconductor layer, and at least part of the second electrode is located on the first side.

In order to make the description of the present invention more detailed and complete, please refer to the description of the following embodiments and related illustrations. However, the embodiments shown below are used to illustrate the light sensing element of the present invention, and the present invention is not limited to the following embodiments. In addition, the dimensions, materials, shapes, relative arrangement, etc. of the components described in the embodiments in this specification are not limited to the description, and the scope of the present invention is not limited to these, but is merely a description. In addition, the size or positional relationship of the components shown in each figure will be exaggerated for clear description. Furthermore, in the following description, in order to appropriately omit detailed descriptions, components of the same or the same nature are shown with the same names and symbols.

FIG. 2 is a schematic top view of a photo sensor element 1 according to an embodiment of the present invention. FIG. 3 is a schematic bottom view of the light sensor device 1 disclosed in an embodiment of the present invention. Figure 4 is a schematic cross-sectional view taken along the tangent line A-A' of Figure 2. In Figure 3, the insulating structure 40 is omitted to briefly illustrate the relative relationship of the components.

As shown in Figures 2, 3, and 4, a light sensing element 1 includes a light sensing unit 10 with a side surface 10s, a through portion 25, a first electrode 20, and a second极23。 Electrode 23. The light sensing unit 10 includes a first semiconductor layer 101, a second semiconductor layer 102, and an active region 103 located between the first semiconductor layer 101 and the second semiconductor layer 102. The through portion 25 is located beside the side surface 10s of the light sensing unit 10.

The first electrode 20 is electrically connected to the first semiconductor layer 101 and includes a first upper electrode 26 located on the first semiconductor layer 101 and a first extension electrode 21 located in the through portion 25. , And a first lower electrode 22 located under the second semiconductor layer 102. The first extension electrode 21 located in the through portion 25 is used to connect the first upper electrode 26 and the first lower electrode 22. The second electrode 23 is electrically connected to the second semiconductor layer 102 and is located under the second semiconductor layer 102. The first lower electrode 22 and the second electrode 23 are located on the same side of the light sensing unit 10.

A transparent supporting structure 60 is located on the light sensing unit 10 and covers the first upper electrode 26. An insulating structure 40 is located under the transparent supporting structure 60 and surrounds the light sensing unit 10. The first extension electrode 21 of the first electrode 20 penetrates the insulating structure 40. The insulating structure 40 includes a part located between the first extension electrode 21 and the side surface 10 s of the light sensing unit 10. In one embodiment, the through portion 25 is a through hole formed in the insulating structure 40, adjacent to the side surface 10s, but the side surface 10s is not exposed to the through portion 25, and at least part of the first extension electrode 21 is located in the through portion 25 in.

In an embodiment of the present invention, the materials of the first semiconductor layer 101, the second semiconductor layer 102 and the active region 103 include group III-V compound semiconductors, such as AlGaInAs, AlGaInP, AlInGaN, AlAsSb, InGaAsP, InGaAsN, AlGaAsP, GaAs , InGaAs, AlGaAs, GaAsP, GaP, InGaP, AlInP, GaN, InGaN or AlGaN.

According to different applications, the active region 103 contains materials with an energy gap of 2.138eV～2.58eV to absorb light in the wavelength range of 480 nm～580 nm; or materials with an energy gap of 1.77eV～2.138eV to absorb the wavelength range Light in the range of 580nm～700nm; or materials with energy gap of 1.21eV～1.65eV to absorb light in the wavelength range of 750nm～1025nm. For example, the material of the active region 103 includes InGaP with an energy gap of 2.25 eV to absorb green light at 550 nm, or InGaAs with an energy gap of 1.88 eV to absorb red light at 660 nm.

In an embodiment of the present invention, the material of the first electrode 20 may be the same as or different from the material of the second electrode 23. In addition, the materials of the first upper electrode 26, the first lower electrode 22, and/or the first extension electrode 21 may be the same or different. The material of the first upper electrode 26, the first lower electrode 22, the first extension electrode 21, and/or the second electrode 23 includes a metal material or a transparent conductive material. Metal materials include but are not limited to aluminum (Al), chromium (Cr), copper (Cu), tin (Sn), gold (Au), nickel (Ni), titanium (Ti), platinum (Pt), lead (Pb) , Zinc (Zn), cadmium (Cd), antimony (Sb), cobalt (Co) or alloys of the above materials. Transparent conductive materials include, but are not limited to, indium tin oxide (ITO), indium oxide (InO), tin oxide (SnO), cadmium tin oxide (CTO), antimony tin oxide (ATO), aluminum zinc oxide (AZO), zinc tin oxide (ZTO), gallium zinc oxide (GZO), indium tungsten oxide (IWO), zinc oxide (ZnO), indium zinc oxide (IZO), aluminum gallium arsenide (AlGaAs), gallium nitride (GaN), gallium phosphide ( GaP), gallium arsenide (GaAs), gallium arsenide phosphorous (GaAsP), diamond-like carbon film (DLC), or graphene. In an embodiment, the first electrode 20 or the second electrode 23 may include a multilayer structure, and each layer structure includes a different material. More specifically, these multilayer structures can be used to provide ohmic contact, adhesion, or good conductor effects, respectively. In order to make the description concise, the following description will be based on the entirety of the first electrode 20 and the second electrode 23, and the internal structure of the first electrode 20 and the second electrode 23 will not be further described.

In one embodiment of the present invention, in order to reduce the area shielded by the electrode, the photosensitive area of the light sensing element 1 is increased. As shown in Figure 2, in the top view of the light sensing element 1, the light sensing unit 10 has a light sensing surface S1, and the orthographic projection area of the light sensing surface S1 of the first upper electrode 26 is the light sensing surface S1 0.1-10% of the area, preferably 0.05-5%, more preferably 0.01-1%.

As shown in Figure 3, in the bottom view of the light sensing element 1, the area where the first upper electrode 26 overlaps the light sensing unit 10 is between 1% and 10% of the projected area of the first lower electrode 20 .

As shown in FIG. 4, the insulating structure 40 includes a first insulating opening 422 to accommodate the first electrode 20 and a second insulating opening 423 to accommodate the second electrode 23. The first electrode 20 and the second electrode 23 respectively include a first recess 220 and a second recess 230 corresponding to the first insulating opening 422 and the second insulating opening 423. In one embodiment (not shown), the position of the first recess 220 corresponds to the first insulating opening 422, and the position of the second recess 230 corresponds to the second insulating opening 423.

In an embodiment of the present invention, as shown in FIG. 4, the outlines of the first lower electrode 22 and the first extension electrode 21 and/or the second electrode 23 in the cross-sectional view are approximately inverted T shapes. The thickness of the first extension electrode 21 located in the first insulating opening 422 is approximately the same as the thickness of the first lower electrode 22 located outside the first insulating opening 422, or the first lower electrode located outside the first insulating opening 422 The thickness of 22 is greater than the thickness of the first extension electrode 21 located in the first insulating opening 422. Similarly, the thickness of a part of the second electrode 23 located in the second insulating opening 423 is approximately the same as the thickness of another part located outside the second insulating opening 423, or the second electrode 23 is located in the second insulating opening 423 The thickness of the outer part is greater than the thickness of the other part located in the second insulating opening 423.

In one embodiment of the present invention, the insulating structure 40 includes organic polymer materials or inorganic materials. Organic polymer materials include Silicone, Siloxane polymer (SINR), Epoxy, Polyimide (PI), Benzocyclobutene (BCB), Perfluorocyclobutane PFCB, SU8, Acrylic Resin, Polymethyl Methacrylate (PMMA), Polyethylene Terephthalate (PET), Polycarbonate (PC), Polyetherimide (Polyetherimide) ) Or Fluorocarbon Polymer. Inorganic materials include silicon _{oxide (SiO x} ), silicon nitride (SiN _x ), silicon oxynitride (SiO _x N _y ), aluminum oxide (Al ₂ O ₃ ), or spin-on glass (SOG).

In one embodiment of the present invention, in order to meet the requirements of packaging manufacturing, such as high insulation strength, heat stability, or low moisture absorption, the insulating structure 40 preferably includes an organic polymer material with a dielectric constant of less than 3, such as Benzocyclobutene (BCB).

The transparent supporting structure 60 is the light-receiving surface of the light sensing element 1. In order to prevent the transparent supporting structure 60 from reflecting or absorbing the ambient light to be detected, in one embodiment of the present invention, the transparent supporting structure 60 includes an organic material or an inorganic material. The inorganic material includes glass, nitride, or oxide, such as sapphire, aluminum oxide (Al ₂ O ₃ ), or aluminum nitride (AlN). Organic materials include silicone, silicone polymer (Siloxane polymer, SINR), epoxy resin (Epoxy), polyimide (PI), benzocyclobutene (BCB), perfluorocyclobutane ( PFCB), SU8, acrylic resin (Acrylic Resin), polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), polycarbonate (PC), polyetherimide (Polyetherimide) or Fluorocarbon Polymer. The thickness of the transparent support structure 60 is preferably 5 μm or more and 150 μm or less. Furthermore, when the transparent support structure 60 includes an elastic material, such as an organic material, the thickness of the transparent support structure 60 is preferably 5 μm to 30 μm. When the transparent support structure 60 includes a rigid material, such as glass or sapphire, the thickness of the transparent support structure 60 is preferably 50 μm to 150 μm.

In an embodiment of the present invention, the light sensing element 1 further includes an optical band pass filter 30 on the light sensing unit 10. In the present invention, the optical band-pass filter 30 is used to selectively allow ambient light of a specific wavelength to enter the active area 103. As shown in FIG. 4, the optical band pass filter 30 is located between the light sensing unit 10 and the transparent supporting structure 60. The optical bandpass filter 30 allows light of at least a specific wavelength range to pass through, and its spectral characteristics are as illustrated in FIG. 10. Figure 10 is a transmission spectrum diagram of the optical bandpass filter 30 disclosed in an embodiment of the present invention. The optical bandpass filter 30 has more than 80% penetration for light with a wavelength of not less than 560 nm and not greater than 620 nm. The optical bandpass filter 30 has a transmittance of less than 5% and preferably 0% for light with a wavelength of less than 560 nm and/or greater than 620 nm. The optical band pass filter 30 has a center wavelength λ _D corresponding to the main absorption wavelength of the light sensing element 1. The optical bandpass filter 30 has a wavelength half-width value Δλ when the transmittance is 50% of the maximum value. Preferably, a bandwidth ratio of the optical bandpass filter 30 Δλ/λ _D > 20%. In the above-mentioned embodiment, the optical band-pass filter 30 has one band-pass band. In another embodiment, the optical band-pass filter 30 may have multiple band-pass bands to filter out light corresponding to different center wavelengths. , The light of different center wavelengths can correspond to different measurement targets.

In an embodiment of the present invention, as shown in FIG. 2, the optical bandpass filter 30 and/or the transparent support structure 60 includes a plane size larger than that of the light sensing unit 10 as viewed from the top view of the light sensing element 1. One of the plane dimensions. From another perspective, the plane size mentioned here is, for example, a width, surface area, or contour range of the shape of the surface observed when observing the aforementioned element from a top-view angle.

In an embodiment of the present invention, the optical bandpass filter 30 may allow light of a plurality of predetermined wavelength ranges to pass through, and reflect light of the remaining wavelengths. The center wavelength of each wavelength range is different from each other.

In one embodiment of the present invention, the optical bandpass filter 30 includes a multi-layer dielectric film of a variety of high and low refractive index materials, which are formed by sputtering, physical vapor deposition, chemical vapor deposition, or electrochemistry. According to another embodiment of the present invention, the optical bandpass filter 30 can also be formed by lithography. A multilayer film structure formed by alternately growing high and low refractive index materials, such as Ta ₂ O ₅ /SiO ₂ , TiO ₂ /SiO ₂ , HfO ₂ /SiO ₂ , ZrO ₂ /SiO ₂ or Y ₂ O ₃ /SiO ₂ , But it is not limited to the above combination of materials.

In an embodiment of the present invention, as shown in FIG. 4, the light sensing element 1 further includes a connecting layer 50 located between the optical bandpass filter 30 and the transparent support structure 60. The material of the connection layer 50 includes an organic material or an inorganic material. Organic materials include silicone, silicone polymer (Siloxane polymer, SINR), epoxy resin (Epoxy), polyimide (PI), benzocyclobutene (BCB), perfluorocyclobutane ( PFCB), SU8, acrylic resin (Acrylic Resin), polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), polycarbonate (PC), polyetherimide (Polyetherimide) or Fluorocarbon Polymer. The inorganic material includes aluminum oxide (Al ₂ O ₃ ) or spin-on glass (SOG). The thickness of the connection layer 50 is not less than 0.3 μm and not more than 3 μm. Therefore, the connection layer 50 has sufficient adhesiveness to join the optical bandpass filter 30 and the transparent support structure 60, and prevents excessive thickness from affecting the amount of light captured by the light sensing element 1. The thickness of the connection layer 50 can be adjusted according to the size of one or more components to be covered. In the present invention, the thickness of the connecting layer 50 is adjusted to connect the optical bandpass filter 30 and the transparent support structure 60 almost without gaps, so as to realize a miniaturized and thin light sensing element of the present invention.

FIG. 5A to FIG. 5G are the manufacturing process of the light sensor element 1 disclosed in an embodiment of the present invention. As shown in Figure 5A, a semiconductor is grown on a substrate 80 through an epitaxial method such as metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), or hydride vapor phase epitaxy (HVPE). Stack 100. The substrate 80 is, for example, a gallium arsenide (GaAs) wafer used for epitaxial growth of an aluminum gallium indium phosphide (AlGaInP) semiconductor film layer. The semiconductor stack 100 includes a first semiconductor layer 101, a second semiconductor layer 102, and an active region 103 located between the first semiconductor layer 101 and the second semiconductor layer 102.

As shown in FIG. 5A, after a plurality of first upper electrodes 26 are formed on the semiconductor stack 100, an optical band pass filter 30 is formed on the semiconductor stack 100 and the first upper electrodes 26. The material of the optical band pass filter 30 includes Ta ₂ O ₅ , TiO ₂ , HfO ₂ , ZrO ₂ , SiO ₂ or Y ₂ O ₃ . The optical bandpass filter 30 can be formed into a multilayer film structure in which high and low refractive index materials are alternately stacked by using the aforementioned dielectric materials.

As shown in FIG. 5B, a connecting layer 50 is formed on the optical band pass filter 30 to bond a transparent support structure 60 to the optical band pass filter 30. Following the step in FIG. 5B, after the semiconductor stack 100 is bonded to the transparent support structure 60 through the connection layer 50, the substrate 80 is removed from the semiconductor stack 100 as shown in the step in FIG. 5C.

As shown in the step of FIG. 5D, a part of the semiconductor stack 100 is removed to form a plurality of etched portions 1010 and the light sensing unit 10 that are separated from each other. The etching part 1010 is formed between two adjacent light sensing units 10 and exposes part of the surface of the first upper electrode 26 and the optical bandpass filter 30.

Following the step of FIG. 5D, as shown in FIG. 5E, an insulating structure 40 is formed on the etching portion 1010 and the plurality of light sensing units 10. The insulating structure 40 includes a first insulating opening 422 and a second insulating opening 423. The first insulating opening 422 is formed on the first upper electrode 26 and exposes part of the first upper electrode 26. The second insulating opening 423 exposes part of the second semiconductor layer 102. In this embodiment, the first insulating opening 422 constitutes a part of the through portion 25. The through portion 25 penetrates the insulating structure 40 to expose a part of the surface of the first upper electrode 26. In this embodiment, the light sensing unit 10 is covered by the connection layer 50, the transparent support structure 60 and the insulating structure 40, and is not easily affected by changes in ambient temperature, thereby realizing a miniaturized and thin light sensing element .

As shown in FIG. 5F, the first lower electrode 22 and the second electrode 23 are formed on the first insulating opening 422 and the second insulating opening 423 of the insulating structure 40, respectively. The first extension electrode 21 is formed in the through portion 25 and connects the first upper electrode 26 and the first lower electrode 22. After the electrode formation step, laser, plasma etching, and/or knife dicing are performed along a cutting line X-X' on one surface of the insulating structure 40 to form the photo sensor element 1 shown in FIG. 4. As shown in FIG. 5F, the cutting line X-X' corresponds to the insulating structure 40, the optical bandpass filter 30, the connection layer 50 and the transparent support structure 60.

Please refer to Figure 5G again, Figure 5G shows another cutting method in the step corresponding to Figure 5F. The position of the cutting lane X-X' in Figure 5G relative to the light sensing element 1 is different from the position of the cutting lane X-X' in Figure 5F relative to the light sensing element 1, and the cutting lane in Figure 5G X-X' corresponds to the first electrode 21, the optical bandpass filter 30, the connection layer 50 and the transparent support structure 60.

It should be noted that FIGS. 5A to 5G are used to illustrate a method of forming the light sensing element 1, so the material or structure of each element is similar to the foregoing, and there is no ambiguity due to the size of the drawing.

FIG. 6 is a cross-sectional view of a light sensor device 2 according to another embodiment of the present invention. The light-sensing element 2 and the light-sensing element 1 have substantially the same structure. Therefore, the light-sensing element 2 in Fig. 6 and the light-sensing element 1 in Fig. 4 have the same structure with the same name and reference number, which means that they are the same For the structure, the same material, or the same function, the description will be omitted or not repeated here. As shown in FIG. 6, in this embodiment, the connecting layer 50 is located between the optical bandpass filter 30 and the light sensing unit 10. The connection layer 50 can connect the optical band pass filter 30 and the light sensing unit 10 by contacting the optical band pass filter 30 and the light sensing unit 10. In one embodiment, depending on the application of the light sensing element 2, the optical bandpass filter 30 can be omitted, and the connecting layer 50 is provided between the transparent support structure 60 and the light sensing unit 10 to join the transparent support structure 60 and Light sensing unit 10. The connection layer 50 may surround or cover the first upper electrode 26. In an embodiment, the thickness of the first upper electrode 26 is about 0.7 μm, and the thickness of the connection layer 50 may be 0.7 μm or more. In other words, an upper surface of the connection layer 50 can be cut to the upper surface of the first upper electrode 26 to prevent the uneven contour of the first upper electrode 26 from affecting the bonding between layers, so that the connection layer 50 connects the filter 30 and The light sensing unit 10 also avoids excessive increase in the overall thickness. In the manufacturing process of the light sensing element 2, the optical bandpass filter 30 can be formed on the transparent support structure 60 first, and then the transparent support structure 60 and the optical bandpass The filter 30 is connected to the light sensing unit 10 via the connection layer 50.

FIG. 7 is a cross-sectional view of a light sensor device 3 according to another embodiment of the present invention. The light-sensing element 3 and the light-sensing element 1 have substantially the same structure. Therefore, the light-sensing element 3 in Fig. 7 and the light-sensing element 1 in Fig. 4 have the same structure with the same name and reference number, which means the same For the structure, the same material, or the same function, the description will be omitted or not repeated here. As shown in FIG. 7, in this embodiment, the connecting layer 50 is located between the transparent supporting structure 60 and the light sensing unit 10, and the position of the optical bandpass filter 30 is located on the transparent supporting structure 60. Based on the foregoing various structures, the relative positions of the transparent support structure 60, the optical bandpass filter 30, and the connection layer 50 can be adjusted according to the three materials and their characteristics (such as adhesion or material interface).

FIG. 8 is a cross-sectional view of a light sensor device 4 according to another embodiment of the present invention. The photo-sensing element 4 and the photo-sensing element 1 have substantially the same structure. Therefore, the photo-sensing element 4 in Fig. 8 and the photo-sensing element 1 in Fig. 4 have the same structure with the same name and reference number, which is represented as the same For the structure, the same material, or the same function, the description will be omitted or not repeated here.

As shown in FIG. 8, according to an embodiment of the present invention, a light sensing element 4 includes a light sensing unit 10, including a first semiconductor layer 101, a second semiconductor layer 102, and an active region 103 Located between the first semiconductor layer 101 and the second semiconductor layer 102; a through portion 25a is located on the light sensing unit 10; a portion of the first electrode 20 passes through the through portion 25a and is electrically connected to the first semiconductor layer 101; The second electrode 23 is electrically connected to the second semiconductor layer 102, wherein a part of the first electrode 20 and the second electrode 23 are located under a surface of the second semiconductor layer 102; a transparent support structure 60 is located on the light sensing unit 10; And an insulating structure 40 is located under the transparent support structure 60 and surrounds the light sensing unit 10. In this embodiment, the first semiconductor layer 101 has an extension section, and the active region 103 is located on part of the first semiconductor layer 101 but not on the extension section. From another perspective, the orthographic projection of the second semiconductor layer 102 on the first semiconductor layer 101 does not cover this extension. The position of the through portion 25a corresponds to this extension section. Without considering the first electrode, the through portion 25a exposes at least part of this extension section. In other words, in this embodiment, via the through portion 25a, the first electrode 20 can be connected to the extension section of the first semiconductor layer 101 through the first extension electrode 21 as described above. Therefore, the step of forming the first upper electrode 26 can be omitted in the manufacturing process.

FIG. 9 is a cross-sectional view of a light sensor device according to an embodiment of the present invention. The aforementioned light sensing element 1, 1 a, 2, 3 or 4 further includes a lens unit 70 on the optical band pass filter 30. This embodiment discloses the bonding of the lens unit 70 at the wafer level or the die level to realize a miniaturized light sensing element. The size of the lens unit 70, such as the shape, thickness, or aperture, can be appropriately adjusted according to the size of the light sensing element 1, 1a, 2, 3, or 4. The lens unit 70 can focus the energy of the ambient light onto the light sensing unit 10. The lens unit 70 may be formed on the light sensing unit 10 by using a photolithography process, a molding process, or other methods. In one embodiment, the lens unit 70 can be a Fresnel lens, a meniscus lens, a plano-convex lens, or a lenticular lens, so as to concentrate or Focus on the light sensing unit 10, thereby enhancing the signal provided to the light sensing element, reducing optical interference, and improving the signal-to-noise ratio of the light sensing element. In another embodiment, as shown in FIG. 9, the lens unit 70 may be a two-dimensional array including a plurality of micro lens units 70. The advantage of the two-dimensional array is that the light absorption of the light sensing unit 10 can be increased, thereby improving the signal-to-noise ratio of the light sensing element.

The material of the lens unit 70 includes an organic material or an inorganic material. The organic material includes methacrylic resin, cycloolefin polymer, epoxy resin, polyethylene, polystyrene, AS resin, polyethylene terephthalate, vinyl chloride resin, or polycarbonate. Inorganic materials include glass or translucent ceramics.

FIG. 11 is a three-dimensional schematic diagram of a light sensing module 6 according to an embodiment of the present invention. As shown in FIG. 11, the aforementioned light sensing elements 1, 1a, 2, 3, 4, or 5 are arranged on a carrier S in a flip chip manner. The carrier board S is electrically connected to the signal processing circuit (not shown in the figure). The signal processing circuit can be directly arranged on the carrier board S or separated from the carrier board S. The carrier S is, for example, a circuit board, preferably a printed circuit board (printed circuit board). The light sensing element 1, 1a, 2, 3, 4, or 5 can be electrically connected to the circuit on the carrier S through the first metal bump 51 and the second metal bump 52, so as to be electrically connected to the signal processing circuit. More specifically, the first metal bump 51 and the second metal bump 52 are electrically connected to the circuit of the carrier S, and the first electrode 20 of the light sensing element 1, 1a, 2, 3, 4, or 5 The second electrode 23 is electrically connected to the first metal bump 51 and the second metal bump 52 respectively. In one embodiment, the signal processing circuit includes an amplifier to amplify the signal detected by the light sensing element 1, 1a, 2, 3, 4, or 5, and at the same time convert the current signal into a voltage signal. The signal processing circuit may also include an analog-to-digital converter to convert the analog signal into a digital signal or an oscillator to generate a stable clock signal.

Compared with the prior art using wires to output electrical signals of the light sensing element, the light sensing element 1, 1a, 2, 3, 4, or 5 of the present invention is electrically connected to the carrier through metal bumps, thereby increasing The light-receiving area of the light-sensing element 1, 1a, 2, 3, 4, or 5, and increase the output current of the light-sensing element 1, 1a, 2, 3, 4, or 5.

The embodiments listed in the present invention are only used to illustrate the present invention, and are not used to limit the scope of the present invention. Any obvious modification or alteration of the present invention made by anyone does not depart from the spirit and scope of the present invention.

1, 2, 3, 4, 5: light sensing element

6: Light sensing module

10: Light sensing unit

10s: side surface

20: first electrode

21: The first extension electrode

22: The first lower electrode

23: second electrode

25, 25a: pass-through part

26: The first upper electrode

30: Optical bandpass filter

40: Insulation structure

50: Connection layer

51: The first metal bump

52: second metal bump

60: Transparent support structure

70: lens unit

80: substrate

100: Semiconductor stack

101: The first semiconductor layer

102: second semiconductor layer

103: active area

200: Conventional light sensing element

202: carrier

201: n-type semiconductor layer

203: p-type semiconductor layer

204: Wire electrode

205: active area

220: first recess

230: second recess

422: first insulation opening

423: second insulating opening

1010: Etching Department

S: carrier board

FIG. 1 is a schematic side view of a conventional light sensor device 200.

FIG. 2 is a schematic top view of a photo sensor element 1 according to an embodiment of the present invention.

FIG. 3 is a schematic bottom view of the light sensor device 1 disclosed in an embodiment of the present invention.

Figure 4 is a schematic cross-sectional view taken along the tangent line A-A' of Figure 2.

FIG. 5A to FIG. 5G are schematic diagrams of the manufacturing process of the light sensor element 1 disclosed in an embodiment of the present invention.

FIG. 6 is a schematic cross-sectional view of a light sensor device 2 according to another embodiment of the present invention.

FIG. 7 is a schematic cross-sectional view of a light sensing element 3 according to another embodiment of the present invention.

FIG. 8 is a schematic cross-sectional view of a light sensing element 4 according to another embodiment of the present invention.

FIG. 9 is a schematic cross-sectional view of a light sensor device 5 according to an embodiment of the present invention.

FIG. 10 is a schematic diagram of the transmission spectrum of an optical bandpass filter according to an embodiment of the present invention.

FIG. 11 is a schematic top view of a light sensing module 6 according to an embodiment of the present invention.

1: Light sensing element

10: Light sensing unit

10s: side surface

20: first electrode

21: The first extension electrode

22: The first lower electrode

23: second electrode

25: Piercing Department

26: The first upper electrode

30: Optical bandpass filter

40: Insulation structure

50: Connection layer

60: Transparent support structure

101: The first semiconductor layer

102: second semiconductor layer

103: active area

220: first recess

230: second recess

422: first insulation opening

423: second insulating opening

Claims (10)

A light sensing element, including: A transparent supporting structure; A light sensing unit including a first semiconductor layer and a second semiconductor layer, the first semiconductor layer being located between the second semiconductor layer and the transparent support structure; An insulating structure surrounding the light sensing unit; A first electrode penetrating the insulating structure and electrically connected to the first semiconductor layer, a part of the first electrode is exposed on a first side of the insulating structure; and A second electrode is electrically connected to the second semiconductor layer, and at least part of the second electrode is located on the first side. According to the light-sensing device described in claim 1, wherein the first semiconductor layer and the second semiconductor layer comprise III-V compound semiconductor materials. According to the light-sensing device described in claim 1, wherein the transparent supporting structure comprises glass. The light sensing element as described in item 1 of the scope of patent application further includes an optical band pass filter located on the light sensing unit. According to the light-sensing device described in claim 1, wherein the transparent supporting structure includes a plane size larger than a plane size of the light-sensing unit. The light-sensing device according to claim 1, wherein the first electrode includes a first upper electrode to contact a position of the light-sensing unit, as viewed from a cross-sectional view of the light-sensing device, The first electrode includes a first lower electrode, and the first upper electrode partially overlaps the first lower electrode. According to the light-sensing element described in claim 6, wherein the first electrode includes a first upper electrode located on a second side of the insulating structure, and the second side is opposite to the first side from the From a top view of a photo-sensing element, the position where the first upper electrode contacts the photo-sensing unit includes a top-view area of 0.01 to 1% of the upper surface area of the photo-sensing element. According to the light-sensing element described in claim 6, wherein the first electrode includes a first upper electrode located on a second side of the insulating structure, and the second side is opposite to the first side from the From the bottom perspective view of one of the light sensing elements, the position where the first upper electrode contacts the light sensing unit includes a bottom view area of 1%-10% of the surface area of the first lower electrode. As described in the first item of the patent application, the insulating structure includes a first insulating opening and a second insulating opening to respectively accommodate at least a part of the first electrode and the second electrode, and the first electrode An electrode and the second electrode each include a concave portion, and the concave portions are respectively located in the first insulating opening and the second insulating opening. A light sensing module, including: A carrier board A light sensing element according to one of items 1 to 9 of the scope of patent application, which is arranged on the carrier board; and A signal processing circuit element is arranged on the carrier board and is electrically connected to the light sensing element.

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