TW202143422A - 具有混合接合界面的半導體元件與其製備方法以及半導體元件組裝結構的製備方法 - Google Patents
具有混合接合界面的半導體元件與其製備方法以及半導體元件組裝結構的製備方法 Download PDFInfo
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Abstract
本揭露提供一種具有一混合接合界面之半導體元件、該半導體元件的製備方法以及半導體元件組裝結構的製備方法。該半導體元件具有一基底、一接合介電質、一第一導電特徵、一氣隙以及一第二導電特徵。該接合介電質設置在該基底上。該第一導電特徵設置在該接合介電質中。該氣隙設置在該接合介電質中以將該第一導電特徵之一周圍的一部分與該接合介電質分隔開。該第二導電特徵具有一底座以及一突出部,該底座設置在該接合介電質中,該突出部堆疊在該底座上。
Description
本申請案主張2020年2月4日申請之美國正式申請案第16/781,377號的優先權及益處,該美國正式申請案之內容以全文引用之方式併入本文中。
本揭露係關於一種半導體元件、該半導體元件的製備方法以及一半導體元件組裝結構的製備方法。特別是有關於一種具有一混合接合界面的半導體元件、該半導體元件的製備方法以及接合多個該半導體元件的製備方法。
半導體元件係使用在不同的電子應用,例如個人電腦、手機、數位相機,或其他電子設備。半導體元件的製造包含依序沉積不同材料層在一半導體晶圓上,並使用微影(lithography)及蝕刻製程圖案化該等材料層,以形成多個微電子部件(microelectronic components)在半導體晶圓上或半導體晶圓中,而該等微電子部件係例如電晶體、二極體、電阻器及/或電容器。
半導體產業係藉由最小特徵尺寸的池需縮減,以持續改善積體密度(integration density),其係允許更多的部件整合到一給定區域(given area)。係發展出具有較小覆蓋區(footprints)的較小封裝結構以封裝該等半導體元件。舉例來說,在試圖進一步增加半導體元件的密度中,係已經探討具有堆疊二或更多微電子部件的三維(3D)積體電路。
上文之「先前技術」說明僅係提供背景技術,並未承認上文之「先前技術」說明揭示本揭露之標的,不構成本揭露之先前技術,且上文之「先前技術」之任何說明均不應作為本案之任一部分。
本揭露之一實施例提供一種半導體元件。該半導體元件包括一基底;一接合介電質,設置在該基底上;至少一第一導電特徵,設置在該接合介電質中;以及至少一氣隙,設置在該接合介電質中,以將該第一導電特徵之一周圍的一部分與該接合介電質分隔開。一第二導電特徵係包括一底座以及一突出部,該底座設置在該接合介電質中,該突出部堆疊在該底座上。
在本揭露的一些實施例中,該氣隙具有一第一寬度,該第二導電特徵的該突出部具有一第二寬度,該第二寬度係小於該第一寬度。
在本揭露的一些實施例中,該第二導電特徵的該底座具有一第三寬度,該第一導電特徵具有一第四寬度,該第四寬度係小於該第三寬度。
在本揭露的一些實施例中,該第三寬度係等於該第一寬度與該第四寬度的總和。
在本揭露的一些實施例中,該半導體元件還包括複數個擴散阻障襯墊,設置在該接合介電質與該第一導電特徵之間,並設置在該接合介電質與該底座之間。
在本揭露的一些實施例中,該第二導電特徵具有一L形輪廓。
本揭露之另一實施例提供一種半導體元件的製備方法。該製備方法的步驟包括:形成一介電層在一基底上;蝕刻該介電層,以產生複數個開孔在該介電層中;塗敷一犧牲層在其中至少一開孔中,以覆蓋至少一部分的介電層;形成至少一第一導電特徵在設置有該犧牲層的該等開孔中以及形成複數個底座在未設置有該犧牲層的該等開孔中;移除該犧牲層,以形成至少一氣隙在該介電層中;以及形成複數個突出部在該等底座上。
在本揭露的一些實施例中,在一對開孔中,該犧牲層僅覆蓋嘎介電層的一部分。
在本揭露的一些實施例中,該第一導電特徵與該等底座係呈一交錯配置(arranged in an interleaved configuration)。
在本揭露的一些實施例中,該第一導電特徵與該等底座使用一鍍覆(plating)製程所形成。
在本揭露的一些實施例中,該第一導電特徵、該等底座與該等突出部包含一相同材料。
在本揭露的一些實施例中,該等突出部的形成之步驟係包括:塗敷一圖案化遮罩在該介電層、該第一導電特徵以及該等底座上,該圖案化遮罩具有複數個穿孔,其中一部分的底座係透過該等穿孔而暴露;以及執行一鍍覆製程以沉積一導電材料在該等穿孔中。
在本揭露的一些實施例中,該半導體元件的製備方法還包括:在該犧牲層塗敷在該等開孔中之前,係沉積一擴散阻障層在該等開孔中;以及在該等突出部形成之後,係移除該擴散阻障層未被該第一導電特徵與該底座所覆蓋的部分。
本揭露之另一實施例提供一種半導體元件組裝結構的製備方法。該製備方法的步驟包括:提供一對半導體元件,該等半導體元件係包括具有互補結構的一第一導電特徵以及至少一第二導電特徵;對準該等半導體元件,以造成其中一個半導體元件的該第一導電特徵接觸另一半導體元件的該第二導電特徵;以及執行一退火製程,以將該第一導電特徵接合到該第二導電特徵。
在本揭露的一些實施例中,該等半導體元件包括一接合介電質,係覆蓋該第一導電特徵之一周圍的一部分並包圍該第二導電特徵,其中在退火製程的執行期間,係熔融該等接合介電質。
在本揭露的一些實施例中,在該等半導體元件對準之後,一空孔(void)係引入在該第一導電特徵與該第二導電特徵之間。
在本揭露的一些實施例中,在退火製程執行期間,由於該第一導電特徵與該第二導電特徵的熱膨脹,因此係除去該空孔。
在本揭露的一些實施例中,連接的該第一導電特徵與該第二導電特徵係當成該等半導體元件的一電性內連接。
在本揭露的一些實施例中,該半導體元件包括交錯配置的複數個第一導電特徵以及複數個第二導電特徵。
上文已相當廣泛地概述本揭露之技術特徵及優點,俾使下文之本揭露詳細描述得以獲得較佳瞭解。構成本揭露之申請專利範圍標的之其它技術特徵及優點將描述於下文。本揭露所屬技術領域中具有通常知識者應瞭解,可相當容易地利用下文揭示之概念與特定實施例可作為修改或設計其它結構或製程而實現與本揭露相同之目的。本揭露所屬技術領域中具有通常知識者亦應瞭解,這類等效建構無法脫離後附之申請專利範圍所界定之本揭露的精神和範圍。
本揭露之以下說明伴隨併入且組成說明書之一部分的圖式,說明本揭露之實施例,然而本揭露並不受限於該實施例。此外,以下的實施例可適當整合以下實施例以完成另一實施例。
應當理解,雖然用語「第一(first)」、「第二(second)」、「第三(third)」等可用於本文中以描述不同的元件、部件、區域、層及/或部分,但是這些元件、部件、區域、層及/或部分不應受這些用語所限制。這些用語僅用於從另一元件、部件、區域、層或部分中區分一個元件、部件、區域、層或部分。因此,以下所討論的「第一裝置(first element)」、「部件(component)」、「區域(region)」、「層(layer)」或「部分(section)」可以被稱為第二裝置、部件、區域、層或部分,而不背離本文所教示。
本文中使用之術語僅是為了實現描述特定實施例之目的,而非意欲限制本發明。如本文中所使用,單數形式「一(a)」、「一(an)」,及「該(the)」意欲亦包括複數形式,除非上下文中另作明確指示。將進一步理解,當術語「包括(comprises)」及/或「包括(comprising)」用於本說明書中時,該等術語規定所陳述之特徵、整數、步驟、操作、元件,及/或組件之存在,但不排除存在或增添一或更多個其他特徵、整數、步驟、操作、元件、組件,及/或上述各者之群組。
圖1為依據本揭露一實施例中一種半導體元件20的剖視示意圖。半導體元件20具有一基底210、一接合介電質222以及一或多個第一導電特徵(first conductive features)242與一或多個第二導電特徵246,而接合介電質222設置在基底210上,而第一導電特徵242與第二導電特徵246係設置在接合介電質222中,其中第一導電特徵242之一周圍2422的一部分係經由接合介電質222而暴露。換言之,一氣隙250係設置在接合介電質222中,以將第一導電特徵242的一部分與接合介電質222分隔開。在一些實施例中,第一導電特徵242與第二導電特徵246可穿經接合介電質222以接觸基底210。
由金屬或金屬合金所製的第一導電特徵242與第二導電特徵246係呈交錯設置(arranged in an interleaved configuration)。從一剖視圖來看,第一導電特徵242可具有一矩形輪廓(rectangular contour)。第二導電特徵246具有一底座(base)243以及一突出部(protrusion)244,底座246係設置在接合介電質222中,突出部244則堆疊在底座243上以及接合介電質222上方。從一剖視圖來看,底座243與突出部244具有矩形輪廓。如圖1所示,氣隙250具有一第一寬度W1,第二導電特徵246的突出部244具有一第二寬度W2,第二寬度W2係小於第一寬度W1。第二導電特徵246的底座243具有一第三寬度W3,第一導電特徵242具有一第四寬度W4,第四寬度W4係小於第三寬度W3。在一些實施例中,第三寬度W3等於第一寬度W1與第四寬度W4的總和。
半導體元件20還包括複數個擴散阻障襯墊232,係設置在第一導電特徵242與接合介電質222之間,以及設置在底座243與接合介電質222之間。該等擴散阻障襯墊232當成一黏合層(glue layer)使用,以有助於第一導電特徵242與第二導電特徵246到接合介電質222的黏性(adhesion)。在一些實施例中,若是第一導電特徵242與第二導電特徵246穿經接合介電質222的話,則該等擴散阻障襯墊232還設置在第一導電特徵242與基底210之間,以及設置在底座243與基底210之間。擴散阻障襯墊232具有良好的擴散阻障特性,以禁止金屬從第一導電特徵242與第二導電特徵246擴散進入到基底210。具有一大致均勻厚度的該等擴散阻障襯墊232可為一單層結構或一多層結構,該多層結構係包括耐火金屬(refractory metals)(例如鈦或鉭)、耐火金屬氮化物(refractory metal nitrides)及/或耐火金屬矽氮化物(refractory metal silicon nitrides)。
圖2為依據本揭露一實施例中一種半導體元件組裝結構(semiconductor device assembly)10的剖視示意圖。請參考圖2,半導體元件組裝結構10包括一對半導體元件,其係包括一下半導體元件20a以及一上半導體元件20b,該對半導體元件係對準並使用一混合接合技術(hybrid bonding technique)而接合在一起。下半導體元件20a以及上半導體元件20b的各層係可大致地類似於如圖1所示的半導體元件20的各層,為了簡潔起見,係省略各層的重複描述。
上半導體元件20b係上下顛倒配置,並堆疊在下半導體元件20a上,而上半導體元件20b的一基底210b係混合接合(hybrid-bonded)到下半導體元件20a的一基底210a,其係用以在基底210a與基底210b之間的實體及電性連接;在一些實施例中,用於接合基底210a與基底210b的製程係包括一金屬對金屬接合(metal-to-metal bonding)製程以及一介電質對介電質接合(dielectric-to-dielectric bonding)製程。舉例來說,基底210a與基底210b可使用相同的製造流程進行製造,以形成一記憶體堆疊(memory stack)。或者是,基底210a與基底210b可使用不同製造流程進行製造,以將一記憶體元件與一處理器或特殊應用積體電路(application-specific integrated circuit, ASIC)堆疊。在一些實施例中, 基底210a與基底210b係為相互朝向面對面堆疊(stacked in a front-to-front configuration)。
在一些實施例中,下半導體元件20a與上半導體元件20b係對準以造成上半導體元件20b的第一導電特徵242b接觸下半導體元件20a的第二導電特徵246a、造成上半導體元件20b的第二導電特徵246b接觸下半導體元件20a的第一導電特徵242a,以及造成上半導體元件20b的一接合介電質222b接觸下半導體元件20a的一接合介電質222a。在一些實施例中,下半導體元件20a的第一導電特徵242a與第二導電特徵246a係呈交錯配置,而上半導體元件20b的第一導電特徵242b與第二導電特徵246b係呈交錯配置。在下半導體元件20a與上半導體元件20b對準之後,係加熱與施力以將第一導電特徵242a與242b接合到第二導電特徵246b與246a,以形成複數個導電特徵110,並固化(cure)接合介電質222a與222b,以形成一介電層120。該等導電特徵110可當成半導體基底210a與210b的一電性連接。
一接合結構100可選擇地包括該等擴散阻障襯墊130,係設置在一部分的導電特徵110與介電層120之間。換言之,一部分的導電特徵110係接觸介電層120。若是該等導電特徵110穿經介電層120的話,則具有一大致均勻厚度的該等擴散阻障層130係可設置在一部分的導電特徵110與基底210a、210b之間。
圖3為依據本揭露一實施例中一種半導體元件20之製備方法400的流程示意圖。圖4到圖12為依據本揭露一實施例中一半導體元件20之製備方法的各中間階段的剖頂視示意圖。圖4到圖12所示的各階段係亦示意地圖例在圖3的流程圖中。在接下來的說明中,如圖4到圖12所示的製造階段係參考如圖3所示的流程步驟進行討論。
請參考圖4,依據圖3中的步驟S402,一介電層220係形成在一基底210上。基底210係包含一半導體晶圓212以及一或多個主要部件(main components)214,而該等主要部件214係設置在半導體晶圓212中。或者是或此外,半導體晶圓212可包含其他元素半導體材料(elementary semiconductor materials),例如鍺(germanium)。在一些實施例中,半導體晶圓212係由一化合物半導體(compound semiconductor)所製,例如碳化矽(silicon carbide)、砷化鎵(gallium arsenic)、砷化銦(indium arsenide)或磷化銦(indium phosphide)。在一些實施例中,半導體晶圓212係由一合金半導體所製,例如矽鍺(silicon germanium)、碳化矽鍺(silicon germanium carbide)、磷化鎵砷(gallium arsenic phosphide) 或磷化鎵銦(gallium indium phosphide)。在一些實施例中,半導體晶圓212可包含一磊晶層(epitaxial layer)。舉例來說,半導體晶圓212具有一磊晶層,係覆蓋在一整塊半導體(bulk semiconductor)中。半導體晶圓212可包含不同的摻雜區(圖未示),其係摻雜有p型摻雜物及/或n型摻雜物,而p型摻雜物係例如硼,n型摻雜物係例如磷或砷。在一些實施例中,隔離特徵(圖未示)係可引入到半導體晶圓212中,以在半導體晶圓212中界定並隔離不同的主要部件214,而隔離特徵係例如淺溝隔離(shallow trench isolation,STI)特徵或是矽局部氧化(local oxidation of silicon,LOCOS)特徵。
該等主要部件214可包括主動(active)部件或被動(passive)部件,主動部件係例如電晶體及/或二極體,被動部件係例如電容器、電阻器或其類似物。該等主要部件214係使用不同製程所形成,包括沉積、蝕刻、植入(implantation)、微影(photolithography)、退火(annealing)及/或其他可應用的製程。此外,舉例來說,該等主要部件214可相互內連接(經由一內連接層216),以形成一邏輯元件、一記憶體元件、一輸入/輸出元件、一系統上晶片(system-on-chip)元件、其他適合類型的元件或其組合。在一些實施例中,在生產線前端(front-end-of-line,FEOL)製程期間,該等主要部件214係可形成在半導體晶圓212上。在一些實施例中,舉例來說,內連接層216係形成在生產線後端(back-end-of-line,BEOL)製程中的半導體晶圓210上,而內連接層216係包括交錯堆疊的多個金屬線以及嵌入在隔離材料中的多個導電栓塞(conductive plugs)(圖未示)。
介電層220係形成在基底210的整個上表面2102上。介電層220係可使用一旋轉塗佈(spin-coating)製程、一電漿加強化學氣相沉積(plasma-enhanced chemical vapor deposition (CVD))製程或其他可形成一介電材料的適合的製程所形成,而介電層220係包括含矽材料,例如二氧化矽。在一些實施例中,可選擇地在介電層220上執行一平坦化製程,以產生一可接受的平坦形貌(topology)。
接著,一蝕刻遮罩300係提供在介電層220上。蝕刻遮罩300包括一或多個窗口302,以暴露部分的介電層220。蝕刻遮罩300藉由執行一曝光(exposure)製程以及一顯影(develop)製程在一光阻材料上所形成,而光阻材料係完全覆蓋介電層220,其中光阻材料可藉由一旋轉塗佈製程塗敷在介電層220上,然後使用一軟烘烤(soft-baking)製程烘乾。
請參考圖5,依據圖3的一步驟S404,經由窗口302蝕刻介電層220,以移除部分的介電層。因此,複數個開孔(openings)224形成在餘留的介電層220中(後文中係以「接合介電質222」表示)。在一些實施例中,部分的基底210係經由該等開孔224暴露。係使用一乾蝕刻製程、一非等向性師蝕刻製程或其他適合的非等向性製程蝕刻介電層220。舉例來說,在該等開孔224形成之後,使用一灰化(ashing)或剝除(strip)製程移除蝕刻遮罩300。
請參考圖6,依據圖3的一步驟S406,一擴散阻障層230係沉積在該等開孔224中。擴散阻障層230係沉積在接合介電質222上,但並未填滿該等開孔224。在一些實施例中,若是該等開孔224穿經接合介電質22的話,則具有一大致均勻厚度的擴散阻障層230係覆蓋基底210的暴露部分。換言之,擴散阻障層230具有仿效接合介電質222與基底210之暴露部分的一輪廓。可使用一物理氣相沉積(PVD)製程、一化學氣相沉積(CVD)製程、一噴濺(sputtering)製程或一原子層沉積(ALD)製程形成擴散阻障層230,其中使用ALD製程所沉積的擴散阻障層230在厚度上係具有高度均勻度。
請參考圖7,依據圖3的一步驟S408,一犧牲層310係塗敷在至少一開孔224中,以覆蓋至少一部份的擴散阻障層230。在一些實施例中,在相鄰對的開孔224中,犧牲層310僅保護一部分的擴散阻障層230。此外,犧牲層310接觸擴散阻障層230塗佈在接合介電質222之各側壁2222上的一部份。如圖7所示,接合介電質222具有一第一厚度T1,擴散阻障層230具有一第二厚度T2,且犧牲層310具有一第三厚度T3,而第三厚度T3係大於第一厚度T1與第二厚度T2的總和。犧牲層310包含一材料,其係可以在不去除其他結構的情況下反應掉的材料。在一些實施例中,舉例來說,犧牲層310可包含一光阻材料,並藉由執行一曝光製程以及一顯影製程在光阻材料上以及沉積在該等開孔224中所形成,而該光阻材料係完全覆蓋擴散阻障層230。空間被犧牲層310所佔用的部分係為形成在一氣隙中的空間,將於後詳述。
請參考圖8,依據圖3的一步驟S410,係執行一鍍覆製程(plating process),以形成一導電層240在該等開孔224中。在一些實施例中,導電層240覆蓋擴散阻障層230未被犧牲層310保護的一部分。在一些實施例中,導電層240係接觸犧牲層310之一周圍(periphery)的一些部分,但並未包圍犧牲層310,以促進犧牲層310的移除,將於後詳述。若是犧牲層310埋入在導電層240中的話,則需要一額外的研磨(polishing)製程執行在導電層240上,以暴露犧牲層310。導電層240包含金屬,例如銅、鋁、鎢、鈷、鈦、金、鉑或其組合。
請參考圖9,依據圖3的一步驟S412,執行一移除製程以移除犧牲層310。在移除製程執行之後,前述被犧牲層310所佔用的空間現在係成為多個氣隙250。換言之,在移除製程執行之後,至少一部分的擴散阻障層230係經由導電層240暴露。舉例來說,可使用一灰化製程或一濕式剝除(wet strip)製程移除犧牲層310。可執行一平坦化製程以移除在接合介電質222上的導電層240,藉此形成部分佔用一些開孔224的至少一第一導電特徵242以及完全佔用一些開孔224的至少一底座243。在一些實施例中,第一導電特徵242與底座243係可交錯配置(arranged in an interleaved configuration)。
請參考圖10,一圖案化遮罩320係塗敷在擴散阻障層230、第一導電特徵242以及底座234上。圖案化遮罩320具有複數個穿孔322,以暴露部分的底座234。係藉由執行一曝光製程以及一顯影製程在一光阻材料上以形成圖案化遮罩320,而光阻材料係完全覆蓋擴散阻障層230、第一導電特徵242以及底座243。
請參考圖11,依據圖3的一步驟S414,複數個突出部244形成在底座243上。據此,係形成複數個第二導電特徵246,而該等第二導電特徵246係具有底座243以及突出部244,且突出部244係堆疊在底座243上。係藉由沉積一導電材料在圖案化遮罩320中的該等穿孔322中以形成突出部244。在一些實施例中,該等穿孔322的充填係可包括一鍍覆製程。在一些實施例中,在鍍覆製程之後,導電材料可滿溢出該等穿孔322,並覆蓋圖案化遮罩320;據此,可執行一額外的平坦化以移除導電材料之滿溢出的部分。在一些實施例中,底座243與突出部244係具有相同材料。舉例來說,在突出部244形成之後,係使用一灰化製程或一剝除製程以移除圖案化遮罩320。
請參考圖12,實施一蝕刻製程以移除擴散阻障層230未被第一導電特徵242與第二導電特徵246所保護的部分。因而,擴散阻障層232係形成在第一導電特徵242與第二導電特徵246的底座243之間,暴露接合介電質222的一上表面2224,並完全地形成半導體元件20。
圖13為依據本揭露一實施例中一種半導體元件組裝結構10之製備方法500的流程示意圖。圖14到圖15為依據本揭露一實施例中一半導體元件組裝結構10之製備方法的各中間階段的剖頂視示意圖。圖14及圖15所示的各階段係亦示意地圖例在圖13的流程圖中。在接下來的說明中,如圖14及圖15所示的製造階段係參考如圖13所示的流程步驟進行討論。
請參考圖14,依據圖13的一步驟S502,提供具有互補形狀之第一導電特徵242a/242b與第二導電特徵246a/246b的一下半導體元件20a以及一上半導體元件20b。在圖14中,下半導體元件20a具有交錯配置的複數個第一導電特徵242a以一複數個第二導電特徵246a,而上半導體元件20b具有交錯配置的複數個第一導電特徵242b以及複數個第二導電特徵246b。或者是,在一些實施例中,下半導體元件20a以及上半導體元件20b可具有一第一導電特徵以及一第二導電特徵,其中第一導電特徵設置在下半導體元件及上半導體元件其中之一上,而第二導電特徵則設置在另一個半導體元件上。
下、上半導體元件20a/20b還具有接合介電質222a/222b,係設置在基底210a/210b上,並覆蓋第一導電特徵242a/242b的周圍2422a/2422b的一主要部分,並包圍第二導電特徵246a/246b的底座243a/243b。至少一氣隙250a/250b引入到每一接合介電質222a/222b中,以暴露第一導電特徵242a/242b之周圍2422a/2422b的其他部分。氣隙250a及250b具有一第一寬度W1,突出部244a及244b具有一第二寬度W2,第二寬度W2係小於第一寬度W1。下/上半導體元件20a/20b亦可具有複數個擴散阻障襯墊232a/232b,係插置在接合介電質222a/222b與第一導電特徵242a/242b之間,以及在底座243a/243b與接合介電質222a/222b之間。
接著,依據圖13的一步驟S504,上半導體元件20b的第一導電特徵242b與第二導電特徵246b係分別對準下半導體元件20a的第二導電特徵246a以及第一導電特徵246a。如圖14所示,第二導電特徵246a/246b具有一底座243a/243b以及一突出部244a/244b,底座243a/243b設置在接合介電質222a/222b中,突出部244a/244b堆疊在底座243a/243b上。如圖15所示,在上半導體元件20b堆疊在下半導體元件20a上之後,第一導電特徵242a/242b係對準第二導電特徵246a/246b,以允許下半導體元件20a的突出部244a容置在上半導體元件20b中的氣隙250中,並允許上半導體元件20b的突出部244b容置在氣隙250a中。請參考圖14及圖15,在下、上半導體元件20a、20b堆疊之後,上半導體元件20b的底座243b係接觸下半導體元件20a的第一導電特徵242a,而上半導體元件20b的第一導電特徵242b係接觸下半導體元件20a的底座243a。由於突出部244a、244b的第二寬度W2係小於氣隙250a、250b的第一寬度W1,因此多個空孔(voids)270係形成在堆疊的下、上半導體元件20a、20b中。該等空孔270係可意在允許第一導電特徵242a、242b以及第二導電特徵246a、246b的膨脹。
接著,執行一退火製程以接合第一導電特徵242a及242b到第二導電特徵246b及246a,因此形成如圖2所示的複數個導電特徵110。退火製程還熔融(fuses)接合介電質222a及222b,因此形成如圖2所示的一介電層120。在一些實施例中,在退火製程期間,係加熱堆疊的下、上半導體元件20a、20b至一第一預定溫度,以使接合介電質222a及220b變成一非受限的粘性液體(non-confined viscous liquid)並回焊(reflowed)。此後,還是加熱堆疊的下、上半導體元件20a、20b到一第二預定溫度,第二預定溫度係高於地一預定溫度,以使第一導電特徵242a及242b與第二導電特徵246a及246b藉由熱壓接合(thermocompression bonding)而內連接,並完全固化(cured)接合介電質222a及222b。在一些實施例中,退火製程的結果,第一導電特徵242a及242b與第二導電特徵246a及246b的材料係伸展,並可排除該等空洞270。因此,係完全形成如圖2所示的半導體元件組裝結構10。
綜上所述,由於增加接合界面,因此可改善由一對接合的半導體元件20所形成之半導體元件組裝結構10的可靠度及性能,而相互配對的該等半導體元件係具有互補形狀第一導電特徵242以及第二導電特徵246。
本揭露之一實施例提供一種半導體元件。該半導體元件包括一基底;一接合介電質,設置在該基底上;至少一第一導電特徵,設置在該接合介電質中;以及至少一氣隙,設置在該接合介電質中,以將該第一導電特徵之一周圍的一部分與該接合介電質分隔開。一第二導電特徵係包括一底座以及一突出部,該底座設置在該接合介電質中,該突出部堆疊在該底座上。
本揭露之另一實施例提供一種半導體元件的製備方法。該製備方法的步驟包括:形成一介電層在一基底上;蝕刻該介電層,以產生複數個開孔在該介電層中;塗敷一犧牲層在其中至少一開孔中,以覆蓋至少一部分的介電層;形成至少一第一導電特徵在設置有該犧牲層的該等開孔中以及形成複數個底座在未設置有該犧牲層的該等開孔中;移除該犧牲層,以形成至少一氣隙在該介電層中;以及形成複數個突出部在該等底座上。
本揭露之另一實施例提供一種半導體元件組裝結構的製備方法。該製備方法的步驟包括:提供一對半導體元件,該等半導體元件係包括具有互補結構的一第一導電特徵以及至少一第二導電特徵;對準該等半導體元件,以造成其中一個半導體元件的該第一導電特徵接觸另一半導體元件的該第二導電特徵;以及執行一退火製程,以將該第一導電特徵接合到該第二導電特徵。
雖然已詳述本揭露及其優點,然而應理解可進行各種變化、取代與替代而不脫離申請專利範圍所定義之本揭露的精神與範圍。例如,可用不同的方法實施上述的許多製程,並且以其他製程或其組合替代上述的許多製程。
再者,本申請案的範圍並不受限於說明書中所述之製程、機械、製造、物質組成物、手段、方法與步驟之特定實施例。該技藝之技術人士可自本揭露的揭示內容理解可根據本揭露而使用與本文所述之對應實施例具有相同功能或是達到實質上相同結果之現存或是未來發展之製程、機械、製造、物質組成物、手段、方法、或步驟。據此,此等製程、機械、製造、物質組成物、手段、方法、或步驟係包含於本申請案之申請專利範圍內。
10:半導體元件組裝結構
20:半導體元件
20a:下半導體元件
20b:上半導體元件
100:接合結構
110:導電特徵
120:介電層
130:擴散阻障襯墊
210:基底
210a:基底
210b:基底
212:半導體晶圓
214:主要部件
216:內連接層
222:接合介電質
222a:接合介電質
222b:接合介電質
224:開孔
230:擴散阻障層
232:擴散阻障襯墊
232a:擴散阻障襯墊
232b:擴散阻障襯墊
240:導電層
242:第一導電特徵
242a:第一導電特徵
242b:第一導電特徵
243:底座
243a:底座
243b:底座
244:突出部
244a:突出部
244b:突出部
246:第二導電特徵
246a:第二導電特徵
246b:第二導電特徵
250:氣隙
250a:氣隙
250b:氣隙
270:空孔
300:蝕刻遮罩
302:窗口
310:犧牲層
320:圖案化遮罩
322:穿孔
400:製備方法
500:製備方法
2102:上表面
2222:側壁
2224:上表面
2422:周圍
2422a:周圍
2422b:周圍
S402:步驟
S404:步驟
S406:步驟
S408:步驟
S410:步驟
S412:步驟
S414:步驟
S502:步驟
S504:步驟
S506:步驟
T1:第一厚度
T2:第二厚度
T3:第三厚度
W1:第一寬度
W2:第二寬度
W3:第三寬度
W4:第四寬度
參閱實施方式與申請專利範圍合併考量圖式時,可得以更全面了解本申請案之揭示內容,圖式中相同的元件符號係指相同的元件。
圖1為依據本揭露一實施例中一種半導體元件的剖視示意圖。
圖2為依據本揭露一實施例中一種半導體元件組裝結構的剖視示意圖。
圖3為依據本揭露一實施例中一種半導體元件之製備方法的流程示意圖。
圖4到圖12為依據本揭露一實施例中一半導體元件之製備方法的各中間階段的剖頂視示意圖。
圖13為依據本揭露一實施例中一種半導體元件組裝結構之製備方法的流程示意圖。
圖14到圖15為依據本揭露一實施例中一半導體元件組裝結構之製備方法的各中間階段的剖頂視示意圖。
20:半導體元件
210:基底
222:接合介電質
232:擴散阻障襯墊
242:第一導電特徵
243:底座
244:突出部
246:第二導電特徵
250:氣隙
2422:周圍
W1:第一寬度
W2:第二寬度
W3:第三寬度
W4:第四寬度
Claims (20)
- 一種半導體元件,包括: 一基底; 一接合介電質,設置在該基底上; 至少一第一導電特徵,設置在該接合介電質中; 至少一氣隙,設置在該接合介電質中,以將該第一導電特徵之一周圍的一部分與該接合介電質分隔開;以及 至少一第二導電特徵,包括一底座以及一突出部,該底座設置在該接合介電質中,該突出部堆疊在該底座上。
- 如請求項1所述之半導體元件,其中該氣隙具有一第一寬度,該第二導電特徵的該突出部具有一第二寬度,該第二寬度係小於該第一寬度。
- 如請求項2所述之半導體元件,其中該第二導電特徵的該底座具有一第三寬度,該第一導電特徵具有一第四寬度,該第四寬度係小於該第三寬度。
- 如請求項3所述之半導體元件,其中該第三寬度係等於該第一寬度與該第四寬度的總和。
- 如請求項1所述之半導體元件,其中該第二導電特徵具有一L形輪廓。
- 如請求項1所述之半導體元件,還包括複數個擴散阻障襯墊,設置在該接合介電質與該第一導電特徵之間,並設置在該接合介電質與該底座之間。
- 如請求項1所述之半導體元件,其中該第一導電特徵與該第二導電特徵係穿經該接合介電質,並接觸該基底。
- 一種半導體元件的製備方法,包括: 形成一介電層在一基底上; 蝕刻該介電層,以產生複數個開孔在該介電層中; 塗敷一犧牲層在其中至少一開孔中,以覆蓋至少一部分的介電層; 形成至少一第一導電特徵在設置有該犧牲層的該等開孔中以及形成複數個底座在未設置有該犧牲層的該等開孔中; 移除該犧牲層,以形成至少一氣隙在該介電層中;以及 形成複數個突出部在該等底座上。
- 如請求項8所述之半導體元件的製備方法,其中在一對開孔中,該犧牲層僅覆蓋嘎介電層的一部分。
- 如請求項8所述之半導體元件的製備方法,其中該第一導電特徵與該等底座係呈一交錯配置。
- 如請求項8所述之半導體元件的製備方法,其中該第一導電特徵與該等底座使用一鍍覆製程所形成。
- 如請求項11所述之半導體元件的製備方法,其中該第一導電特徵、該等底座與該等突出部具有相同材料。
- 如請求項8所述之半導體元件的製備方法,其中該等突出部的形成係包括: 塗敷一圖案化遮罩在該介電層、該第一導電特徵以及該等底座上,該圖案化遮罩具有複數個穿孔,其中一部分的底座係透過該等穿孔而暴露;以及 執行一鍍覆製程以沉積一導電材料在該等穿孔中。
- 如請求項8所述之半導體元件的製備方法,還包括: 在該犧牲層塗敷在該等開孔中之前,係沉積一擴散阻障層在該等開孔中;以及 在該等突出部形成之後,係移除該擴散阻障層未被該第一導電特徵與該底座所覆蓋的部分。
- 一種半導體元件組裝結構的製備方法,包括: 提供一對半導體元件,該等半導體元件係包括具有互補結構的一第一導電特徵以及至少一第二導電特徵; 對準該等半導體元件,以造成其中一個半導體元件的該第一導電特徵接觸另一半導體元件的該第二導電特徵;以及 執行一退火製程,以將該第一導電特徵接合到該第二導電特徵。
- 如請求項15所述之半導體元件組裝結構的製備方法,其中該等半導體元件包括一接合介電質,係覆蓋該第一導電特徵之一周圍的一部分並包圍該第二導電特徵,其中在退火製程的執行期間,係熔融該等接合介電質。
- 如請求項15所述之半導體元件組裝結構的製備方法,其中在該等半導體元件對準之後,一空孔係引入在該第一導電特徵與該第二導電特徵之間。
- 如請求項17所述之半導體元件組裝結構的製備方法,其中在退火製程執行期間,由於該第一導電特徵與該第二導電特徵的熱膨脹,因此係除去該空孔。
- 如請求項15所述之半導體元件組裝結構的製備方法,其中連接的該第一導電特徵與該第二導電特徵係當成該等半導體元件的一電性內連接。
- 如請求項15所述之半導體元件組裝結構的製備方法,其中該半導體元件包括交錯配置的複數個第一導電特徵以及複數個第二導電特徵。
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