TW202138500A - Polishing composition for magnetic disk substrate - Google Patents

Polishing composition for magnetic disk substrate Download PDF

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TW202138500A
TW202138500A TW110102693A TW110102693A TW202138500A TW 202138500 A TW202138500 A TW 202138500A TW 110102693 A TW110102693 A TW 110102693A TW 110102693 A TW110102693 A TW 110102693A TW 202138500 A TW202138500 A TW 202138500A
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acid
magnetic disk
abrasive composition
water
polishing
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安藤順一郎
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日商山口精研工業股份有限公司
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  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)

Abstract

The present invention provides a polishing composition for a magnetic disk substrate capable of reducing waviness and halation of the substrate after polishing without lowering productivity. The polishing composition for magnetic disk substrate contains colloidal silica, a water-soluble polymer compound, an acid and water. The water-soluble polymer compound is a copolymer using a monomer having a carboxylic acid group, a monomer selected from a N-alkyl acrylamide or a N-alkyl methacrylamide, a monomer selected from an acrylamide or a methacrylamide and a monomer having a sulfonic acid group as essential monomers.

Description

磁碟基板用研磨劑組合物 Abrasive composition for magnetic disk substrate

本發明係關於一種用於研磨半導體、硬碟等的磁記錄媒體等電子零件的磁碟基板用研磨劑組合物。特別是關於一種用於玻璃磁碟基板或鋁磁碟基板等磁記錄媒體用基板的表面研磨的研磨劑組合物,再者,係關於一種用於在鋁合金製的基板表面上形成有無電解鎳-磷鍍覆薄膜之磁記錄媒體用鋁磁碟基板的表面研磨的磁碟基板用研磨劑組合物。 The present invention relates to an abrasive composition for magnetic disk substrates used for polishing electronic parts such as magnetic recording media such as semiconductors and hard disks. In particular, it relates to an abrasive composition used for surface polishing of substrates for magnetic recording media such as glass disk substrates or aluminum disk substrates. Furthermore, it relates to an abrasive composition used to form electroless nickel on the surface of aluminum alloy substrates. -An abrasive composition for a magnetic disk substrate for polishing the surface of an aluminum magnetic disk substrate for a magnetic recording medium of a phosphorus-coated thin film.

以往,為了提升磁記錄密度,對於用以研磨鋁磁碟基板之無電解鎳-磷鍍覆薄膜表面的磁碟基板用研磨劑組合物,期望提升各種研磨特性。例如,由於存在刮痕,該刮痕部分可能會成為寫入錯誤與讀取錯誤等的原因,或是在刮痕部分的周圍產生的毛邊,也可能會成為磁頭碰撞等的原因。 In the past, in order to increase the magnetic recording density, it has been desired to improve various polishing characteristics of the abrasive composition for a magnetic disk substrate for polishing the surface of the electroless nickel-phosphorus plating film of the aluminum magnetic disk substrate. For example, due to scratches, the scratched part may be a cause of writing errors and reading errors, or the burrs generated around the scratched part may be a cause of a head collision.

於是,以減少刮痕為目的,於鋁磁碟基板的研磨中,主要使用膠質氧化矽來作為磁碟基板用研磨劑組合物中擔任機械研磨的研磨粒部分。此情況下,在工業研磨中,磁碟基板用研磨劑組合物中擔任機械研磨的研磨粒部分與擔任化學研磨的藥劑成分,大多在即將進行實際研磨之前才混合使用。 Therefore, for the purpose of reducing scratches, colloidal silica is mainly used in the polishing of aluminum magnetic disk substrates as the abrasive grain portion for mechanical polishing in the abrasive composition for magnetic disk substrates. In this case, in industrial polishing, the abrasive grain portion for mechanical polishing and the chemical component for chemical polishing in the abrasive composition for magnetic disk substrates are mostly mixed and used just before the actual polishing.

然而,若將作為研磨粒部分的膠質氧化矽與藥劑成分混合,則膠質氧化矽一般呈現凝聚的傾向。作為此現象的對策,例如已有人提出了下述提案:嘗試將粗大粒子或凝聚粒子去除,或調整粒子的形狀, 或調整研磨劑的腐蝕性(專利文獻1);嘗試調整粒子的形狀(專利文獻2);嘗試調整凝聚粒子的含量(專利文獻3);及嘗試藉由添加特定的共聚物來抑制膠質氧化矽的凝聚,以改善研磨後基板的表面狀態(專利文獻4)等。 However, if colloidal silica, which is part of the abrasive grains, is mixed with chemical components, colloidal silica generally tends to agglomerate. As a countermeasure to this phenomenon, for example, the following proposals have been made: try to remove coarse particles or aggregated particles, or adjust the shape of particles, Or adjust the corrosiveness of the abrasive (Patent Document 1); try to adjust the shape of the particles (Patent Document 2); try to adjust the content of agglomerated particles (Patent Document 3); and try to suppress colloidal silica by adding specific copolymers To improve the surface condition of the substrate after polishing (Patent Document 4).

[先前技術文獻] [Prior Technical Literature]

[專利文獻] [Patent Literature]

[專利文獻1] 日本特開2009-120850號公報 [Patent Document 1] JP 2009-120850 A

[專利文獻2] 日本特開2009-172709號公報 [Patent Document 2] JP 2009-172709 A

[專利文獻3] 日本特開2010-170650號公報 [Patent Document 3] JP 2010-170650 A

[專利文獻4] 日本特開2019-79583號公報 [Patent Document 4] Japanese Patent Application Publication No. 2019-79583

再者,從提升磁記錄密度的觀點來看,除了減少刮痕以外,另外還要求「減少光暈(halation)」與「減少起伏」。此處,所謂光暈係使用基板全表面缺陷檢查機(Hitachi High-Tech Fine Systems公司製NS2000H)在特定的檢查條件下可檢測出的基板表面之細微缺陷,其能夠以光暈計數(halation count)進行定量評價。此外,基板全表面缺陷檢查機的詳細於以下敘述。 Furthermore, from the viewpoint of increasing the magnetic recording density, in addition to reducing scratches, "reduction of halation" and "reduction of fluctuations" are also required. Here, the so-called halo refers to the fine defects on the substrate surface that can be detected under specific inspection conditions using a substrate full-surface defect inspection machine (Hitachi High-Tech Fine Systems NS2000H), which can be measured as a halation count (halation count). ) Perform quantitative evaluation. In addition, the details of the substrate full-surface defect inspection machine are described below.

據認為「光暈」係由於基板表面的某種細微的不均勻性存在於基板的大範圍內而引起的現象,一般認為其原因是研磨墊、載體、基板、研磨劑組合物各自所具有的特性不協調所導致。特別是近年來,光暈的存在成為妨礙提升磁記錄密度的主要原因而成為新的問題,亟待尋求減少此光暈。 It is believed that "halo" is a phenomenon caused by the existence of a small unevenness of the substrate surface in a large area of the substrate. It is generally believed that the cause is the respective characteristics of the polishing pad, carrier, substrate, and polishing agent composition. Caused by inconsistent characteristics. Especially in recent years, the existence of halo has become a major factor hindering the improvement of magnetic recording density and has become a new problem, and it is urgent to seek to reduce this halo.

另一方面,關於「起伏」,以往就要求減少基板表面整體的起伏的平均值。再者,從基板表面的中心部朝向外周部,亦有平均值及 不均勻度增加的傾向,該傾向成為妨礙提升磁記錄密度的主要原因而造成問題。 On the other hand, with regard to "fluctuations", it has conventionally been required to reduce the average value of the fluctuations of the entire substrate surface. Furthermore, from the center of the substrate surface to the outer periphery, there are also average values and The tendency of unevenness to increase, which becomes a major cause hindering the increase in magnetic recording density and causes problems.

相對於此,例如,專利文獻4中提出了藉由添加特定的共聚物來改善研磨後基板表面的起伏及光暈。然而,在與研磨速度的平衡方面,要求進一步改善該等性能。 In contrast to this, for example, Patent Document 4 proposes to improve the undulation and halo of the substrate surface after polishing by adding a specific copolymer. However, in terms of the balance with the polishing speed, it is required to further improve these properties.

於是,本發明鑒於上述實際情況而完成,課題在於提供一種磁碟基板用研磨劑組合物,其不會降低生產性,且可使研磨後基板的起伏及光暈兩者皆減少。 Therefore, the present invention was completed in view of the above-mentioned actual situation, and the problem is to provide an abrasive composition for a magnetic disk substrate, which does not reduce productivity and can reduce both the undulation and halo of the substrate after polishing.

為了解決上述課題,本案申請人進行深入研究的結果,藉由使用以下所示的磁碟基板用研磨劑組合物,不會影響生產性,且可實現減少起伏及光暈,而達成本發明。 In order to solve the above-mentioned problems, as a result of intensive research conducted by the applicant, by using the abrasive composition for magnetic disk substrates shown below, the productivity is not affected, and the reduction of undulations and halos can be achieved, thus achieving the invention.

[1]一種磁碟基板用研磨劑組合物,包含膠質氧化矽、水溶性高分子化合物、酸及水,其中該水溶性高分子化合物係以具有羧酸基之單體、從N-烷基丙烯醯胺或N-烷基甲基丙烯醯胺中選擇之單體、從丙烯醯胺或甲基丙烯醯胺中選擇之單體及具有磺酸基之單體為必要單體的共聚物。 [1] An abrasive composition for a magnetic disk substrate, comprising colloidal silica, a water-soluble polymer compound, an acid and water, wherein the water-soluble polymer compound is a monomer having a carboxylic acid group, from an N-alkyl group A copolymer in which a monomer selected from acrylamide or N-alkyl methacrylamide, a monomer selected from acrylamide or methacrylamide, and a monomer having a sulfonic acid group are necessary monomers.

[2]如上述[1]之磁碟基板用研磨劑組合物,其中該酸為含磷之無機酸及/或含磷之有機酸。 [2] The abrasive composition for a magnetic disk substrate according to the above [1], wherein the acid is a phosphorus-containing inorganic acid and/or a phosphorus-containing organic acid.

[3]如上述[1]或[2]之磁碟基板用研磨劑組合物,其中該水溶性高分子化合物中,源自具有羧酸基之單體的構成單元的比例在50~95mol%的範圍,源自從N-烷基丙烯醯胺或N-烷基甲基丙烯醯胺中選擇之單體的構成單元的比例在5~40mol%的範圍,源自從丙烯醯胺或甲基丙烯醯胺中選擇之單體的構成單元的比例在0.3~10mol%的範圍,源自具有磺酸基之單體的構成單元的比例在0.01~20mol%的範圍。 [3] The abrasive composition for magnetic disk substrates according to [1] or [2] above, wherein the water-soluble polymer compound has a ratio of structural units derived from monomers having carboxylic acid groups of 50 to 95 mol% The ratio of the constituent units derived from monomers selected from N-alkyl acrylamide or N-alkyl methacrylamide is in the range of 5-40 mol%, derived from acrylamide or methyl The ratio of the constituent units of the monomer selected in the acrylamide is in the range of 0.3 to 10 mol%, and the ratio of the constituent unit derived from the monomer having a sulfonic acid group is in the range of 0.01 to 20 mol%.

[4]如上述[1]至[3]中任一項之磁碟基板用研磨劑組合物,其中該具有羧酸基之單體係選自丙烯酸或其鹽、及甲基丙烯酸或其鹽的單體。 [4] The abrasive composition for a magnetic disk substrate according to any one of the above [1] to [3], wherein the single system having a carboxylic acid group is selected from acrylic acid or its salt, and methacrylic acid or its salt The monomer.

[5]如上述[1]至[4]中任一項之磁碟基板用研磨劑組合物,其中該具有磺酸基之單體係選自異戊二烯磺酸、2-丙烯醯胺-2-甲基丙磺酸、2-甲基丙烯醯胺-2-甲基丙磺酸、苯乙烯磺酸、乙烯磺酸、烯丙基磺酸、異戊烯磺酸、萘磺酸及該等之鹽的單體。 [5] The abrasive composition for a magnetic disk substrate according to any one of the above [1] to [4], wherein the single system having a sulfonic acid group is selected from isoprene sulfonic acid and 2-acrylamide -2-methyl propane sulfonic acid, 2-methacrylamide-2-methyl propane sulfonic acid, styrene sulfonic acid, vinyl sulfonic acid, allyl sulfonic acid, isopenten sulfonic acid, naphthalene sulfonic acid and Monomers of these salts.

[6]如上述[2]之磁碟基板用研磨劑組合物,其中該含磷之無機酸係選自由磷酸、膦酸、次膦酸、焦磷酸及三聚磷酸所構成之群組的至少1種以上之化合物。 [6] The abrasive composition for a magnetic disk substrate according to the above [2], wherein the phosphorus-containing inorganic acid is selected from at least the group consisting of phosphoric acid, phosphonic acid, phosphinic acid, pyrophosphoric acid and tripolyphosphoric acid More than one compound.

[7]如上述[2]之磁碟基板用研磨劑組合物,其中該含磷之有機酸係選自由2-胺基乙基膦酸、1-羥基亞乙基-1,1-二膦酸、胺基三(亞甲基膦酸)、乙二胺四(亞甲基膦酸)、二伸乙三胺五(亞甲基膦酸)、乙烷-1,1-二膦酸、乙烷-1,1,2-三膦酸、乙烷-1-羥基-1,1,2-三膦酸、乙烷-1,2-二羧基-1,2-二膦酸、甲烷羥基膦酸、2-膦醯基丁烷-1,2-二羧酸、1-膦醯基丁烷-2,3,4-三羧酸及α-甲基膦醯基琥珀酸所構成之群組的至少1種以上之化合物。 [7] The abrasive composition for a magnetic disk substrate according to the above [2], wherein the phosphorus-containing organic acid is selected from 2-aminoethylphosphonic acid and 1-hydroxyethylene-1,1-diphosphine Acid, amino tris (methylene phosphonic acid), ethylene diamine tetra (methylene phosphonic acid), diethylene triamine penta (methylene phosphonic acid), ethane-1,1-diphosphonic acid, Ethane-1,1,2-triphosphonic acid, ethane-1-hydroxy-1,1,2-triphosphonic acid, ethane-1,2-dicarboxy-1,2-diphosphonic acid, methane hydroxyl Phosphonic acid, 2-phosphonobutane-1,2-dicarboxylic acid, 1-phosphonobutane-2,3,4-tricarboxylic acid and α-methylphosphonosuccinic acid At least one compound of the group.

[8]如上述[1]至[7]中任一項之磁碟基板用研磨劑組合物,其中該研磨劑組合物進一步含有氧化劑。 [8] The abrasive composition for a magnetic disk substrate according to any one of [1] to [7] above, wherein the abrasive composition further contains an oxidizing agent.

[9]如上述[1]至[8]中任一項之磁碟基板用研磨劑組合物,其係用於研磨經無電解鎳-磷鍍覆之鋁磁碟基板。 [9] The abrasive composition for a magnetic disk substrate according to any one of the above [1] to [8], which is used for polishing an aluminum magnetic disk substrate plated with electroless nickel-phosphorus.

本發明之磁碟基板用研磨劑組合物,藉由提升研磨速度來避免影響生產性,且可減少研磨後的起伏及光暈。 The abrasive composition for magnetic disk substrates of the present invention avoids affecting productivity by increasing the polishing speed, and can reduce the fluctuation and halo after polishing.

以下,對本發明之磁碟基板用研磨劑組合物的實施形態進行說明。此外,本發明之磁碟基板用研磨劑組合物並不限定於以下實施形態,只要不脫離發明的範圍,可加以變更、修正、改良。 Hereinafter, an embodiment of the abrasive composition for a magnetic disk substrate of the present invention will be described. In addition, the abrasive composition for a magnetic disk substrate of the present invention is not limited to the following embodiments, and can be changed, modified, and improved as long as it does not deviate from the scope of the invention.

1.磁碟基板用研磨劑組合物 1. Abrasive composition for magnetic disk substrate

本發明之一實施形態的磁碟基板用研磨劑組合物(以下簡稱為「研磨劑組合物」)包含膠質氧化矽、水溶性高分子化合物、酸及水。以下分別詳細敘述各構成。 The abrasive composition for magnetic disk substrates (hereinafter referred to as "abrasive composition") according to an embodiment of the present invention includes colloidal silica, a water-soluble polymer compound, acid, and water. Each configuration is described in detail below.

1.1 膠質氧化矽 1.1 Colloidal silica

本實施形態之研磨劑組合物所含有的膠質氧化矽,其平均粒徑(D50)較佳為1~100nm,再佳為3~80nm。 The colloidal silica contained in the abrasive composition of this embodiment preferably has an average particle size (D50) of 1-100 nm, and more preferably 3-80 nm.

膠質氧化矽的形狀,已知有球狀、金平糖型(表面有凸部之粒狀)、不規則狀等的形狀,其一次粒子單分散於水中而形成膠狀。作為本發明中使用之膠質氧化矽,較佳為球狀或接近球狀的膠質氧化矽。藉由使用球狀或接近球狀的膠質氧化矽,可使研磨後基板的表面平滑性進一步提升。 The shape of colloidal silica is known as a spherical shape, a kimping sugar type (a granular shape with protrusions on the surface), an irregular shape, and the like, and its primary particles are monodispersed in water to form a colloidal shape. The colloidal silica used in the present invention is preferably spherical or nearly spherical colloidal silica. By using spherical or nearly spherical colloidal silica, the surface smoothness of the substrate after polishing can be further improved.

膠質氧化矽的製造方法有水玻璃法、烷氧矽烷法、以及在鹼觸媒的存在下使金屬矽與水反應而合成二氧化矽粒子的方法等;該水玻璃法係以矽酸鈉、矽酸鉀等矽酸鹼金屬鹽為原料,使該原料在水溶液中進行縮合反應而使粒子成長;該烷氧矽烷法係以四乙氧基矽烷等的四烷氧矽烷為原料,使該原料在含有醇等水溶性有機溶劑的水中,以酸或鹼下的水解進行縮合反應而使粒子成長。 The manufacturing methods of colloidal silica include the water glass method, the alkoxysilane method, and the method of synthesizing silicon dioxide particles by reacting metallic silicon with water in the presence of an alkali catalyst; the water glass method is based on sodium silicate, Alkali metal silicate such as potassium silicate is used as a raw material, and the raw material undergoes a condensation reaction in an aqueous solution to grow particles; the alkoxysilane method uses tetraalkoxysilane such as tetraethoxysilane as the raw material to make the raw material In water containing a water-soluble organic solvent such as alcohol, a condensation reaction proceeds by hydrolysis under acid or alkali to grow particles.

已知膠質氧化矽有球狀、鏈狀、金平糖型(表面有凸部之粒 狀)、不規則狀等的形狀,其一次粒子單分散於水中而形成膠狀。作為本發明中使用之膠質氧化矽,較佳為球狀或接近球狀的膠質氧化矽。 It is known that colloidal silica has spherical, chain-like, and golden sugar type (grains with convex parts on the surface). Shapes), irregular shapes, etc., the primary particles are monodispersed in water to form a gel. The colloidal silica used in the present invention is preferably spherical or nearly spherical colloidal silica.

研磨劑組合物中的膠質氧化矽的濃度較佳為1~50質量%。更佳為2~40質量%。 The concentration of colloidal silica in the abrasive composition is preferably 1-50% by mass. More preferably, it is 2-40% by mass.

1.2 水溶性高分子化合物 1.2 Water-soluble polymer compounds

本發明中使用之水溶性高分子化合物係以具有羧酸基之單體、從N-烷基丙烯醯胺或N-烷基甲基丙烯醯胺中選擇之單體、從丙烯醯胺或甲基丙烯醯胺中選擇之單體及具有磺酸基之單體為必要單體的共聚物。 The water-soluble polymer compound used in the present invention is a monomer having a carboxylic acid group, a monomer selected from N-alkyl acrylamide or N-alkyl methacrylamide, and a monomer selected from acrylamide or methyl acrylate. The monomer selected from the acrylamide and the monomer having a sulfonic acid group are copolymers of essential monomers.

1.2.1 具有羧酸基之單體 1.2.1 Monomers with carboxylic acid groups

作為具有羧酸基之單體,較佳為使用不飽和脂肪族羧酸及其鹽。具體而言,可列舉:丙烯酸、甲基丙烯酸、馬來酸、衣康酸及該等之鹽。作為鹽,可列舉:鈉鹽、鉀鹽、鎂鹽、銨鹽、胺鹽、烷基銨鹽等。 As the monomer having a carboxylic acid group, an unsaturated aliphatic carboxylic acid and its salt are preferably used. Specifically, acrylic acid, methacrylic acid, maleic acid, itaconic acid, and these salts can be cited. Examples of the salt include sodium salt, potassium salt, magnesium salt, ammonium salt, amine salt, and alkylammonium salt.

1.2.2 從N-烷基丙烯醯胺或N-烷基甲基丙烯醯胺中選擇之單體 1.2.2 A monomer selected from N-alkyl acrylamide or N-alkyl methacrylamide

作為從N-烷基丙烯醯胺或N-烷基甲基丙烯醯胺中選擇之單體的具體例,可列舉:N-甲基丙烯醯胺、N-乙基丙烯醯胺、N-正丙基丙烯醯胺、N-異丙基丙烯醯胺、N-正丁基丙烯醯胺、N-異丁基丙烯醯胺、N-二級丁基丙烯醯胺、N-三級丁基丙烯醯胺、N-甲基甲基丙烯醯胺、N-乙基甲基丙烯醯胺、N-正丙基甲基丙烯醯胺、N-異丙基甲基丙烯醯胺、N-正丁基甲基丙烯醯胺、N-異丁基甲基丙烯醯胺、N-二級丁基甲基丙烯醯胺、N-三級丁基甲基丙烯醯胺等。 As specific examples of the monomer selected from N-alkyl acrylamide or N-alkyl methacrylamide, N-methacrylamide, N-ethacrylamide, N-normal Propyl acrylamide, N-isopropyl acrylamide, N-n-butyl acrylamide, N-isobutyl acrylamide, N-second butyl acrylamide, N-tertiary butyl propylene Amide, N-methylmethacrylamide, N-ethylmethacrylamide, N-propylmethacrylamide, N-isopropylmethacrylamide, N-n-butylmethyl Acrylic amide, N-isobutyl methacrylamide, N-secondary butyl methacrylamide, N-tertiary butyl methacrylamide, etc.

1.2.3 具有磺酸基之單體 1.2.3 Monomers with sulfonic acid groups

作為具有磺酸基之單體的具體例,可列舉:異戊二烯磺酸、2-丙烯醯胺-2-甲基丙磺酸、2-甲基丙烯醯胺-2-甲基丙磺酸、苯乙烯磺酸、乙烯磺 酸、烯丙基磺酸、異戊烯磺酸、萘磺酸及該等之鹽等。較佳可列舉:2-丙烯醯胺-2-甲基丙磺酸、2-甲基丙烯醯胺-2-甲基丙磺酸及該等之鹽等。 Specific examples of the monomer having a sulfonic acid group include: isoprene sulfonic acid, 2-propenamide-2-methylpropanesulfonic acid, 2-methacrylamide-2-methylpropanesulfonate Acid, styrene sulfonic acid, vinyl sulfonate Acid, allyl sulfonic acid, isoamylene sulfonic acid, naphthalene sulfonic acid and their salts, etc. Preferable examples include 2-acrylamide-2-methylpropanesulfonic acid, 2-methacrylamide-2-methylpropanesulfonic acid, and their salts.

1.2.4 共聚物 1.2.4 Copolymer

本發明之研磨劑組合物中含有的水溶性高分子化合物係以上述具有羧酸基之單體、從N-烷基丙烯醯胺或N-烷基甲基丙烯醯胺中選擇之單體、從丙烯醯胺或甲基丙烯醯胺中選擇之單體及具有磺酸基之單體作為必要單體而構成的共聚物。 The water-soluble polymer compound contained in the abrasive composition of the present invention is based on the above-mentioned monomer having a carboxylic acid group, a monomer selected from N-alkylacrylamide or N-alkylmethacrylamide, A copolymer composed of monomers selected from acrylamide or methacrylamide and monomers having sulfonic acid groups as essential monomers.

源自具有羧酸基之單體的構成單元在共聚物中所占的比例較佳為50~95mol%,更佳為60~93mol%,再佳為70~90mol%。 The ratio of the constituent unit derived from the monomer having a carboxylic acid group in the copolymer is preferably 50 to 95 mol%, more preferably 60 to 93 mol%, and still more preferably 70 to 90 mol%.

源自從N-烷基丙烯醯胺或N-烷基甲基丙烯醯胺中選擇之單體的構成單元在共聚物中所占的比例較佳為5~40mol%,更佳為6~35mol%,再佳為7~30mol%。 The proportion of constituent units derived from monomers selected from N-alkyl acrylamide or N-alkyl methacrylamide in the copolymer is preferably 5-40 mol%, more preferably 6-35 mol %, more preferably 7~30mol%.

源自從丙烯醯胺或甲基丙烯醯胺中選擇之單體的構成單元在共聚物中所占的比例較佳為0.3~10mol%,更佳為0.6~9mol%,再佳為1.0~8mol%。 The proportion of constituent units derived from monomers selected from acrylamide or methacrylamide in the copolymer is preferably 0.3-10 mol%, more preferably 0.6-9 mol%, and still more preferably 1.0-8 mol %.

源自具有磺酸基之單體的構成單元在共聚物中所占的比例較佳為0.01~20mol%,更佳為0.1~10mol%,再佳為0.2~5mol%。 The ratio of the constituent unit derived from the monomer having a sulfonic acid group in the copolymer is preferably 0.01-20 mol%, more preferably 0.1-10 mol%, and still more preferably 0.2-5 mol%.

水溶性高分子化合物中,源自具有羧酸基之單體的構成單元及源自具有磺酸基之單體的構成單元係以酸的狀態存在的比例較多或是以鹽的狀態存在的比例較多,能夠以水溶性高分子化合物的pH值進行評價。亦即,作為酸存在的比例較多時,pH值變低,作為鹽存在的比例較多時,pH值變高。在本發明之研磨劑組合物中,例如,可使用濃度10質量%之水溶性高分子化合物水溶液中的pH值(25℃)在0.1~13.0之範圍的水溶性高分子化合物。 Among the water-soluble polymer compounds, structural units derived from monomers having carboxylic acid groups and structural units derived from monomers having sulfonic acid groups are present in an acid state or in a salt state. The ratio is large and can be evaluated by the pH value of the water-soluble polymer compound. That is, when there is a large proportion of acid, the pH value becomes low, and when there is a large proportion as salt, the pH value becomes high. In the abrasive composition of the present invention, for example, a water-soluble polymer compound having a pH value (25° C.) in the range of 0.1 to 13.0 in an aqueous solution of a water-soluble polymer compound with a concentration of 10% by mass can be used.

1.2.5 水溶性高分子化合物的製造方法 1.2.5 Manufacturing methods of water-soluble polymer compounds

水溶性高分子化合物的製造方法並無特別限制,例如,較佳為使用水溶液聚合法來製造。根據該水溶液聚合法,可得到形成均勻溶液的水溶性高分子化合物。 The production method of the water-soluble polymer compound is not particularly limited. For example, it is preferably produced by an aqueous solution polymerization method. According to this aqueous solution polymerization method, a water-soluble polymer compound that forms a uniform solution can be obtained.

作為上述水溶液聚合法的聚合溶劑,較佳為水性溶劑,特佳為水。又,為了提升上述單體成分對於溶劑的溶解性,在不會造成不良影響的範圍內,亦可於各單體的聚合中適當加入有機溶劑。作為上述有機溶劑,可列舉:異丙醇等的醇類、丙酮等的酮類。該等可單獨使用1種或是組合2種以上使用。 As the polymerization solvent in the aforementioned aqueous polymerization method, an aqueous solvent is preferred, and water is particularly preferred. In addition, in order to improve the solubility of the above-mentioned monomer components in solvents, an organic solvent may be appropriately added to the polymerization of each monomer within a range that does not cause adverse effects. As said organic solvent, alcohols, such as isopropanol, and ketones, such as acetone, are mentioned. These can be used individually by 1 type or in combination of 2 or more types.

以下說明使用上述水性溶劑之水溶性高分子化合物的製造方法。聚合反應中可使用習知的聚合起始劑,但特佳為使用自由基聚合起始劑。 Hereinafter, the production method of the water-soluble polymer compound using the above-mentioned aqueous solvent will be explained. A conventional polymerization initiator can be used for the polymerization reaction, but it is particularly preferable to use a radical polymerization initiator.

作為自由基聚合起始劑,可舉例如:過硫酸鈉、過硫酸鉀及過硫酸銨等的過硫酸鹽、氫過氧化三級丁基等的氫過氧化物類、過氧化氫等的水溶性過氧化物、過氧化丁酮、過氧化環己酮等的酮過氧化物類、過氧化二(三級丁基)、過氧化三級丁基異丙苯基等的過氧化二烷基類等的油溶性過氧化物、偶氮雙異丁腈、二氫氧化2,2-偶氮雙(2-甲基丙脒)等的偶氮化合物。該等過氧化物系自由基聚合起始劑可僅使用1種或併用2種以上。 Examples of radical polymerization initiators include persulfates such as sodium persulfate, potassium persulfate, and ammonium persulfate, hydroperoxides such as tertiary butyl hydroperoxide, and water-soluble solutions such as hydrogen peroxide. Peroxides, ketone peroxides such as methyl ethyl ketone peroxide and cyclohexanone peroxide, dialkyl peroxides such as di(tertiary butyl) peroxide and tertiary butyl cumyl peroxide Azo compounds such as oil-soluble peroxides such as azobisisobutyronitrile and 2,2-azobis(2-methylpropionamidine) dihydroxide. These peroxide-based radical polymerization initiators may be used alone or in combination of two or more kinds.

上述過氧化物系自由基聚合起始劑之中,從容易控制生成之水溶性高分子化合物的分子量的觀點來看,較佳為過硫酸鹽或偶氮化合物,特佳為偶氮雙異丁腈。 Among the above-mentioned peroxide-based radical polymerization initiators, from the viewpoint of easy control of the molecular weight of the water-soluble polymer compound produced, persulfate or azo compound is preferred, and azobisisobutyl is particularly preferred. Nitrile.

上述自由基聚合起始劑的使用量並無特別限制,基於水溶性高分子化合物的全部單體總質量,較佳係以0.1~15質量%、特別是0.5~10質量%的比例使用。藉由使該比例為0.1質量%以上,可提升共聚 合率,藉由使其為15質量%以下,可提升水溶性高分子化合物的穩定性。 The amount of the radical polymerization initiator used is not particularly limited, and it is preferably used in a ratio of 0.1 to 15% by mass, particularly 0.5 to 10% by mass, based on the total mass of all monomers of the water-soluble polymer compound. By making the ratio 0.1% by mass or more, the copolymerization can be improved By setting the ratio to 15% by mass or less, the stability of the water-soluble polymer compound can be improved.

又,視情況,水溶性高分子化合物亦可使用水溶性氧化還原系聚合起始劑來製造。作為氧化還原系聚合起始劑,可列舉:氧化劑(例如上述過氧化物)與重亞硫酸鈉、重亞硫酸銨、亞硫酸銨、低亞硫酸鈉等的還原劑或鐵明礬、鉀明礬等的組合。 In addition, depending on the circumstances, the water-soluble polymer compound may also be produced using a water-soluble redox-based polymerization initiator. Examples of the redox polymerization initiator include a combination of an oxidizing agent (for example, the above-mentioned peroxide) and a reducing agent such as sodium bisulfite, ammonium bisulfite, ammonium sulfite, sodium hyposulfite, or iron alum, potassium alum, and the like.

在製造水溶性高分子化合物中,亦可將鏈轉移劑適當添加至聚合系中,用於調整分子量。作為鏈轉移劑,可舉例如:亞磷酸鈉、次磷酸鈉、次磷酸鉀、亞硫酸鈉、亞硫酸氫鈉、巰乙酸、巰丙酸、硫乙醇酸、2-丙硫醇、2-巰基乙醇及硫酚等。 In the production of a water-soluble polymer compound, a chain transfer agent may be appropriately added to the polymerization system to adjust the molecular weight. Examples of chain transfer agents include sodium phosphite, sodium hypophosphite, potassium hypophosphite, sodium sulfite, sodium bisulfite, thioacetic acid, mercaptopropionic acid, thioglycolic acid, 2-propanethiol, 2-mercaptoethanol, and Thiophenol and so on.

製造水溶性高分子化合物時的聚合溫度並無特別限制,但聚合溫度較佳係以60~100℃進行。藉由使聚合溫度為60℃以上,聚合反應順利地進行,且生產性優異,藉由使其為100℃以下,可抑制著色。又,聚合反應亦可在加壓或減壓下進行,但設置加壓或減壓反應用設備需要成本,因此較佳在常壓下進行。聚合時間較佳為進行2~20小時,特別是3~10小時。 The polymerization temperature in the production of the water-soluble polymer compound is not particularly limited, but the polymerization temperature is preferably 60 to 100°C. By setting the polymerization temperature to 60°C or higher, the polymerization reaction progresses smoothly and the productivity is excellent, and by setting it to 100°C or lower, coloring can be suppressed. In addition, the polymerization reaction can also be carried out under pressure or reduced pressure, but the installation of equipment for the pressure or reduced pressure reaction requires cost, so it is preferably carried out under normal pressure. The polymerization time is preferably 2 to 20 hours, especially 3 to 10 hours.

聚合反應後,視需求以鹼性化合物進行中和。作為用於中和的鹼性化合物,可列舉:氫氧化鈉、氫氧化鉀等的鹼金屬氫氧化物、氫氧化鈣、氫氧化鎂等的鹼土金屬之氫氧化物、氨水、單乙醇胺、二乙醇胺、三乙醇胺等的有機胺類。 After the polymerization reaction, it is neutralized with a basic compound as required. Examples of the basic compound used for neutralization include alkali metal hydroxides such as sodium hydroxide and potassium hydroxide, alkaline earth metal hydroxides such as calcium hydroxide and magnesium hydroxide, ammonia, monoethanolamine, and diethanolamine. Organic amines such as ethanolamine and triethanolamine.

水溶性高分子化合物濃度為10質量%之水溶液的情況下,中和後的pH值(25℃)較佳為2~9,再佳為3~8。 In the case of an aqueous solution with a water-soluble polymer compound concentration of 10% by mass, the neutralized pH value (25° C.) is preferably 2-9, more preferably 3-8.

1.2.6 重量平均分子量 1.2.6 Weight average molecular weight

水溶性高分子化合物的重量平均分子量較佳為1,000~1,000,000,更佳為2,000~800,000,再佳為3,000~600,000。此外,水溶性高分子化合物的重量平均分子量係藉由凝膠滲透層析儀(GPC)在聚丙烯酸換算下所測 量。水溶性高分子化合物的重量平均分子量小於1,000的情況下,研磨後的起伏變差。又,超過1,000,000的情況下,水溶液的黏度變高而難以處理。 The weight average molecular weight of the water-soluble polymer compound is preferably 1,000 to 1,000,000, more preferably 2,000 to 800,000, and still more preferably 3,000 to 600,000. In addition, the weight average molecular weight of water-soluble polymer compounds is measured by gel permeation chromatography (GPC) in terms of polyacrylic acid conversion. quantity. When the weight average molecular weight of the water-soluble polymer compound is less than 1,000, the undulation after polishing becomes worse. Moreover, when it exceeds 1,000,000, the viscosity of the aqueous solution becomes high and it becomes difficult to handle.

1.2.7 濃度 1.2.7 Concentration

研磨劑組合物中的水溶性高分子化合物的濃度,在固體成分換算下,較佳為0.0001~3.0質量%,更佳為0.0005~2.0質量%,再佳為0.001~1.0質量%。水溶性高分子化合物的濃度少於0.0001質量%的情況下,無法充分得到水溶性高分子化合物的添加效果,多於3.0質量%的情況下,添加水溶性高分子化合物的效果趨於平緩,由於添加多餘的水溶性高分子化合物而不經濟。 The concentration of the water-soluble polymer compound in the abrasive composition is preferably 0.0001 to 3.0% by mass in terms of solid content, more preferably 0.0005 to 2.0% by mass, and still more preferably 0.001 to 1.0% by mass. When the concentration of the water-soluble polymer compound is less than 0.0001% by mass, the effect of adding the water-soluble polymer compound cannot be sufficiently obtained. When the concentration of the water-soluble polymer compound is more than 3.0% by mass, the effect of adding the water-soluble polymer compound tends to be flat. It is not economical to add excess water-soluble polymer compounds.

1.3 酸 1.3 Acid

本案發明的研磨劑組合物含有酸。作為酸,可列舉:無機酸及有機酸,其中較佳為含磷之無機酸及/或含磷之有機酸。 The abrasive composition of the present invention contains an acid. Examples of the acid include inorganic acids and organic acids. Among them, phosphorus-containing inorganic acids and/or phosphorus-containing organic acids are preferred.

作為無機酸,可列舉:硝酸、硫酸、鹽酸等。作為含磷之無機酸,可列舉:磷酸、膦酸、次膦酸、焦磷酸、三聚磷酸等。 As an inorganic acid, nitric acid, sulfuric acid, hydrochloric acid, etc. are mentioned. Examples of phosphorus-containing inorganic acids include phosphoric acid, phosphonic acid, phosphinic acid, pyrophosphoric acid, tripolyphosphoric acid, and the like.

作為有機酸,可列舉:麩胺酸、天冬胺酸、檸檬酸、酒石酸、草酸、硝乙酸、馬來酸、蘋果酸、琥珀酸等。 Examples of organic acids include glutamic acid, aspartic acid, citric acid, tartaric acid, oxalic acid, nitroacetic acid, maleic acid, malic acid, succinic acid, and the like.

作為含磷之有機酸,可列舉選自2-胺基乙基膦酸、1-羥基亞乙基-1,1-二膦酸、胺基三(亞甲基膦酸)、乙二胺四(亞甲基膦酸)、二伸乙三胺五(亞甲基膦酸)、乙烷-1,1-二膦酸、乙烷-1,1,2-三膦酸、乙烷-1-羥基-1,1,2-三膦酸、乙烷-1,2-二羧基-1,2-二膦酸、甲烷羥基膦酸、2-膦醯基丁烷-1,2-二羧酸、1-膦醯基丁烷-2,3,4-三羧酸、α-甲基膦醯基琥珀酸的至少1種以上之化合物。 Examples of phosphorus-containing organic acids include those selected from the group consisting of 2-aminoethylphosphonic acid, 1-hydroxyethylene-1,1-diphosphonic acid, aminotri(methylenephosphonic acid), ethylenediamine tetra (Methylene phosphonic acid), ethylene triamine penta (methylene phosphonic acid), ethane-1,1-diphosphonic acid, ethane-1,1,2-triphosphonic acid, ethane-1 -Hydroxy-1,1,2-triphosphonic acid, ethane-1,2-dicarboxy-1,2-diphosphonic acid, methane hydroxyphosphonic acid, 2-phosphonobutane-1,2-dicarboxy At least one compound of acid, 1-phosphinobutane-2,3,4-tricarboxylic acid, and α-methylphosphinosuccinic acid.

將上述化合物組合2種以上使用亦為較佳實施態樣,較佳係含磷之無機酸與含磷之有機酸的組合,具體而言,可列舉磷酸與1-羥 基亞乙基-1,1-二膦酸的組合。 Combining two or more of the above compounds is also a preferred embodiment, preferably a combination of a phosphorus-containing inorganic acid and a phosphorus-containing organic acid. Specifically, phosphoric acid and 1-hydroxyl A combination of ethylene-1,1-diphosphonic acid.

研磨劑組合物中酸的濃度可根據研磨劑組合物之pH調整所需的量而適當設定。 The concentration of the acid in the abrasive composition can be appropriately set according to the amount required for pH adjustment of the abrasive composition.

1.4 氧化劑 1.4 Oxidizer

本發明之研磨劑組合物可含有氧化劑作為研磨促進劑。作為氧化劑,可使用過氧化物、過錳酸或其鹽、鉻酸或其鹽、過氧酸或其鹽、鹵素含氧酸或其鹽、氧酸或其鹽、將該等氧化劑2種以上混合而成者等。 The abrasive composition of the present invention may contain an oxidizing agent as a polishing accelerator. As the oxidizing agent, peroxide, permanganic acid or its salt, chromic acid or its salt, peroxy acid or its salt, halogen oxyacid or its salt, oxyacid or its salt, two or more of these oxidizing agents can be used Mixtures, etc.

具體而言,可列舉:過氧化氫、過氧化鈉、過氧化鋇、過氧化鉀、過錳酸鉀、鉻酸之金屬鹽、二鉻酸之金屬鹽、過硫酸、過硫酸鈉、過硫酸鉀、過硫酸銨、過氧磷酸、過氧硼酸鈉、過甲酸、過醋酸、次氯酸、次氯酸鈉、次氯酸鈣等。其中較佳為過氧化氫、過硫酸及其鹽、次氯酸及其鹽等,再佳為過氧化氫。 Specifically, examples include: hydrogen peroxide, sodium peroxide, barium peroxide, potassium peroxide, potassium permanganate, metal salts of chromic acid, metal salts of dichromic acid, persulfuric acid, sodium persulfate, persulfuric acid Potassium, ammonium persulfate, peroxyphosphoric acid, sodium peroxyborate, performic acid, peracetic acid, hypochlorous acid, sodium hypochlorite, calcium hypochlorite, etc. Among them, hydrogen peroxide, persulfuric acid and its salts, hypochlorous acid and its salts, etc. are preferred, and hydrogen peroxide is more preferred.

研磨劑組合物中的氧化劑含量較佳為0.01~10.0質量%。更佳為0.1~5.0質量%。 The content of the oxidizing agent in the abrasive composition is preferably 0.01 to 10.0% by mass. More preferably, it is 0.1 to 5.0% by mass.

本發明之研磨劑組合物,除了上述成分以外,亦可含有緩衝劑、防黴劑、抗菌劑等。 In addition to the above-mentioned components, the abrasive composition of the present invention may also contain a buffer, an antifungal agent, an antibacterial agent, and the like.

1.5 物性 1.5 Physical properties

本發明之研磨劑組合物的pH值(25℃)較佳為0.1~4.0,更佳為0.5~3.0。藉由使研磨劑組合物的pH值(25℃)為0.1以上,可抑制表面平滑性變差。藉由使研磨劑組合物的pH值(25℃)為4.0以下,可抑制研磨速度降低。無電解鎳-磷鍍覆中,若在pH值(25℃)為4.0以下的條件下,則有鎳溶解的傾向而難以進行鍍覆。另一方面,在研磨中,例如,若在pH值(25℃)為4.0以下的條件下,則有鎳溶解的傾向,故可藉由使用本發明之研磨劑組合物來提高研磨速度。 The pH value (25°C) of the abrasive composition of the present invention is preferably 0.1 to 4.0, more preferably 0.5 to 3.0. By making the pH value (25°C) of the polishing agent composition 0.1 or more, the deterioration of the surface smoothness can be suppressed. By making the pH value (25°C) of the polishing agent composition 4.0 or less, it is possible to suppress the decrease in polishing rate. In electroless nickel-phosphorus plating, if the pH value (25° C.) is 4.0 or less, nickel tends to dissolve, making it difficult to perform plating. On the other hand, in polishing, for example, if the pH value (25°C) is 4.0 or less, nickel tends to dissolve. Therefore, the polishing rate can be increased by using the polishing composition of the present invention.

2.磁碟基板的研磨方法 2. Grinding method of magnetic disk substrate

本發明之研磨劑組合物適合用於研磨經無電解鎳-磷鍍覆之鋁磁碟基板(以下稱為「鋁碟」)或玻璃磁碟基板等的磁碟基板。特別適合用於研磨鋁碟。 The abrasive composition of the present invention is suitable for polishing magnetic disk substrates such as electroless nickel-phosphorus-plated aluminum disk substrates (hereinafter referred to as "aluminum disks") or glass disk substrates. Especially suitable for grinding aluminum discs.

作為可應用本發明之研磨劑組合物的研磨方法,例如有:將研磨墊貼附於研磨機的壓板,並將研磨劑組合物供給至研磨對象物(例如鋁碟)之研磨表面或研磨墊,以研磨墊摩擦研磨表面的方法(稱為拋光)。 As a polishing method to which the abrasive composition of the present invention can be applied, there are, for example, attaching a polishing pad to the platen of a polishing machine, and supplying the polishing composition to the polishing surface or polishing pad of an object to be polished (for example, an aluminum disc) , The method of rubbing the surface with a polishing pad (called polishing).

例如,同時研磨鋁碟的正面與背面時,有使用雙面研磨機,於上壓板及下壓板分別貼附研磨墊的方法。該方法中係將研磨劑組合物供給至貼附於上壓板及下壓板之研磨墊之間,使兩個研磨墊同時旋轉,藉此研磨鋁碟的正面與背面。研磨墊亦可使用胺基甲酸酯型、麂皮絨(suede)型、不織布型、其他任意類型。 For example, when grinding the front and back of an aluminum disc at the same time, there is a method of using a double-sided grinding machine to attach a polishing pad to the upper and lower plates. In this method, the abrasive composition is supplied between the polishing pads attached to the upper pressing plate and the lower pressing plate, and the two polishing pads are rotated at the same time, thereby grinding the front and back surfaces of the aluminum disc. The polishing pad can also be of urethane type, suede type, non-woven type, and any other types.

【實施例】 [Examples]

以下,根據實施例具體說明本發明,但本發明並不限定於該等實施例,只要屬於本發明的技術範圍,則能夠以各種態樣實施,此自不待言。 Hereinafter, the present invention will be specifically described based on embodiments, but the present invention is not limited to these embodiments. As long as it falls within the technical scope of the present invention, it can be implemented in various ways, and it goes without saying.

2.1 研磨劑組合物的製備方法 2.1 Preparation method of abrasive composition

作為實施例1~21及比較例1~5而分別製備的研磨劑組合物,係以下述所示之表1中記載的含量或添加量包含該表1所記載的材料而構成。此外,關於表1之水溶性高分子化合物中的聚合物7,由於無法得到共聚物均勻溶解的水溶液,故未實施研磨試驗。 The abrasive compositions prepared as Examples 1 to 21 and Comparative Examples 1 to 5 respectively contained the materials described in Table 1 in the content or addition amount described in Table 1 shown below. In addition, regarding polymer 7 in the water-soluble polymer compound in Table 1, since an aqueous solution in which the copolymer was uniformly dissolved could not be obtained, the polishing test was not carried out.

【表1】

Figure 110102693-A0202-12-0013-10
【Table 1】
Figure 110102693-A0202-12-0013-10

Figure 110102693-A0202-12-0014-2
Figure 110102693-A0202-12-0014-2

在上述表1中,1-羥基亞乙基-1,1-二膦酸的簡稱為HEDP,丙烯酸的簡稱為AA,丙烯醯胺的簡稱為AM,N-三級丁基丙烯醯胺的簡稱為TBAA,2-丙烯醯胺-2-甲基丙磺酸的簡稱為ATBS。下述表2、3及研究等亦使用該簡稱。 In Table 1 above, the abbreviation for 1-hydroxyethylene-1,1-diphosphonic acid is HEDP, the abbreviation for acrylic acid is AA, the abbreviation for acrylamide is AM, and the abbreviation for N-tertiary butyl acrylamide is It is TBAA, and the abbreviation for 2-propenamide-2-methylpropanesulfonic acid is ATBS. The following tables 2, 3 and research also use this abbreviation.

如表1所記載,水溶性高分子化合物係使用聚合物1~10的聚合物。此外,水溶性高分子化合物的重量平均分子量係藉由凝膠滲透層析法(GPC)在聚丙烯酸換算下所測量,以下顯示GPC測量條件。 As described in Table 1, the water-soluble high-molecular compound uses polymers 1-10. In addition, the weight average molecular weight of the water-soluble polymer compound is measured by gel permeation chromatography (GPC) in terms of polyacrylic acid. The GPC measurement conditions are shown below.

2.2 GPC條件 2.2 GPC conditions

管柱:G4000PWXL(Tosoh公司製)+G2500PWXL(Tosoh公司製) Column: G4000PWXL (manufactured by Tosoh) + G2500PWXL (manufactured by Tosoh)

溶析液:0.2M磷酸緩衝劑/乙腈=9/1(容量比) Eluent: 0.2M phosphate buffer/acetonitrile=9/1 (volume ratio)

流速:1.0ml/min Flow rate: 1.0ml/min

溫度:40℃ Temperature: 40℃

檢測:210nm(UV) Detection: 210nm (UV)

樣本:濃度5mg/ml(注入量100μl) Sample: concentration 5mg/ml (injection volume 100μl)

校正曲線用聚合物:聚丙烯酸分子量(峰頂分子量:Mp)11.5萬、2.8萬、4100、1250(創和化學股份有限公司、American Polymer Standards公司) Polymer for calibration curve: polyacrylic acid molecular weight (peak top molecular weight: Mp) 115,000, 28,000, 4100, 1250 (Chuanghe Chemical Co., Ltd., American Polymer Standards)

2.3 膠質氧化矽的粒徑 2.3 Particle size of colloidal silica

膠質氧化矽的粒徑(海伍德(Heywood)直徑)係使用穿透式電子顯微鏡(TEM)(日本電子股份有限公司製,穿透式電子顯微鏡JEM2000FX(200kV))拍攝倍率10萬倍的視野,並使用分析軟體(Mountech有限公司製,Mac-View Ver.4.0)分析該影像,藉此測量海伍德直徑(投射面積等效圓直徑)。膠質氧化矽的平均粒徑係在上述方法中分析2000個左右的膠質氧化矽的粒徑,其係使用上述分析軟體(Mountech有限公司製,Mac-View Ver.4.0),算出小粒徑側開始的累積粒徑分布(累積體積基準)成為50%的粒 徑所算出的平均粒徑(D50)。 The particle size (Heywood diameter) of colloidal silica is a transmission electron microscope (TEM) (manufactured by JEOL Co., Ltd., transmission electron microscope JEM2000FX (200kV)) with a field of view of 100,000 times magnification. An analysis software (made by Mountech Co., Ltd., Mac-View Ver.4.0) was used to analyze the image to measure Haywood's diameter (equivalent circle diameter of the projected area). The average particle size of colloidal silica is analyzed by the above method to analyze the particle size of about 2000 colloidal silica. It is calculated using the above analysis software (manufactured by Mountech Co., Ltd., Mac-View Ver.4.0) to calculate the small particle size. The cumulative particle size distribution (cumulative volume basis) becomes 50% of the particles The average particle diameter (D50) calculated from the diameter.

2.4 研磨條件 2.4 Grinding conditions

將無電解鎳-磷鍍覆的外徑95mm之鋁磁碟基板經進行粗研磨而成者作為研磨對象。 A 95mm outer diameter aluminum magnetic disk substrate plated with electroless nickel-phosphorus is subjected to rough grinding as the grinding object.

研磨機:SpeedFam有限公司製,9B雙面研磨機 Grinding machine: 9B double-sided grinding machine manufactured by SpeedFam Co., Ltd.

研磨墊:FILWEL有限公司製P2用墊片 Grinding pad: P2 gasket made by FILWEL Co., Ltd.

壓板旋轉數:上壓板 -8.3min-1 Number of rotations of the pressing plate: Upper pressing plate -8.3min -1

下壓板 25.0min-1 Lower plate 25.0min -1

研磨劑組合物供給量:50ml/min Abrasive composition supply amount: 50ml/min

研磨時間:300秒 Grinding time: 300 seconds

加工壓力:14kPa Processing pressure: 14kPa

將各成分混合以製備研磨劑組合物後,通過孔徑0.45μm的過濾器導入研磨機,實施研磨試驗。研磨試驗結果顯示於表2及表3。此外,表2的比較例4係使用表1的聚合物7作為水溶性高分子化合物,但無法得到共聚物均勻的水溶液,故未實施研磨試驗。 After mixing each component to prepare an abrasive composition, it was introduced into a grinder through a filter with a pore size of 0.45 μm, and a grinding test was performed. The grinding test results are shown in Table 2 and Table 3. In addition, in Comparative Example 4 of Table 2, the polymer 7 of Table 1 was used as the water-soluble polymer compound, but a uniform aqueous solution of the copolymer could not be obtained, so the polishing test was not performed.

【表2】

Figure 110102693-A0202-12-0017-11
【Table 2】
Figure 110102693-A0202-12-0017-11

Figure 110102693-A0202-12-0018-4
Figure 110102693-A0202-12-0018-4

【表3】

Figure 110102693-A0202-12-0019-12
【table 3】
Figure 110102693-A0202-12-0019-12

2.5 經研磨之碟片表面的評價 2.5 Evaluation of the polished disc surface

2.5.1 研磨速度比 2.5.1 Grinding speed ratio

研磨速度係測量研磨後減少的鋁磁碟基板的質量,再依據下式而算出。 The polishing speed is measured by measuring the mass of the aluminum magnetic disk substrate reduced after polishing, and then calculated according to the following formula.

研磨速度(mg/min)=鋁磁碟基板的減少質量(mg)/研磨時間(min) Grinding speed (mg/min) = reduced mass of aluminum magnetic disk substrate (mg) / grinding time (min)

關於研磨速度比,於表2中係將比較例1中研磨基板時使用上式所求出的研磨速度設為1(基準)時的相對值,於表3中係將比較例5中研磨基板時使用上式所求出的研磨速度設為1(基準)時的相對值。研磨速度比的數值越大,研磨特性越好。 Regarding the polishing rate ratio, Table 2 is the relative value when the polishing rate obtained using the above formula when polishing the substrate in Comparative Example 1 is set to 1 (reference), and in Table 3 is the relative value when the substrate is polished in Comparative Example 5. When using the above formula, the polishing speed is set to 1 (reference) when the relative value. The larger the value of the polishing speed ratio, the better the polishing characteristics.

2.5.2 研磨後的基板表面的起伏評價方法 2.5.2 Evaluation method of the undulation of the substrate surface after polishing

基板表面的起伏係使用AMETEK公司製三維光學輪廓儀New View 8300進行測量。 The undulation of the substrate surface was measured using a three-dimensional optical profiler New View 8300 manufactured by AMETEK.

基板表面的測量條件如下。 The measurement conditions of the substrate surface are as follows.

Figure 110102693-A0202-12-0020-6
Figure 110102693-A0202-12-0020-6

關於起伏比,於表2中係將比較例1中研磨基板時使用上述方法所求出的值設為1(基準)時的相對值,於表3中係將比較例5中研磨基板時使用上述方法所求出的值設為1(基準)時的相對值。起伏比的數值越大,研磨特性越好。 Regarding the undulation ratio, in Table 2, the value obtained by the above method when polishing the substrate in Comparative Example 1 is a relative value when 1 (reference), and in Table 3, it is used when polishing the substrate in Comparative Example 5. The value obtained by the above method is a relative value when 1 (reference). The larger the value of the undulation ratio, the better the polishing characteristics.

2.5.3 研磨後的基板表面的光暈評價方法 2.5.3 Evaluation method of halo on the substrate surface after polishing

光暈係使用基板全表面缺陷檢查機Hitachi High-Tech Fine Systems公司製NS2000H進行測量。 The halo system was measured using a substrate full-surface defect inspection machine NS2000H manufactured by Hitachi High-Tech Fine Systems.

光暈的測量條件如下。 The measurement conditions of the halo are as follows.

Figure 110102693-A0202-12-0021-8
Figure 110102693-A0202-12-0021-8

光暈可在上述檢查條件下被檢測出作為基板表面的細微缺陷,而以光暈計數進行定量評價。 The halo can be detected as a fine defect on the substrate surface under the above-mentioned inspection conditions, and the halo count can be used for quantitative evaluation.

2.5.4 光暈比 2.5.4 Halo ratio

關於光暈比,於表2中係將比較例1中研磨基板時使用上述方法所求出的光暈計數設為1(基準)時的相對值,於表3中係將比較例5中研磨基板時使用上述方法所求出的光暈計數設為1(基準)時的相對值。光暈比的數值越大,研磨特性越好。 Regarding the halo ratio, Table 2 shows the relative value when the halo count obtained by the above method when polishing the substrate in Comparative Example 1 is set to 1 (reference), and Table 3 shows the relative value when polishing the substrate in Comparative Example 5. The relative value when the halo count obtained by the above method is set to 1 (reference) when the substrate is used. The greater the value of the halo ratio, the better the polishing characteristics.

3.研究 3. Research

下述顯示根據上述實驗結果進行探討的研究結論。表2係研磨劑組合 物中的共聚物的TBAA含量為16mol%時的研磨試驗結果,相較於AA/TBAA/ATBS共聚物,AA/TBAA/AM/ATBS共聚物的研磨速度有所提升(實施例1與比較例1的對比、實施例6與比較例2、3的對比)。 The following shows the research conclusions discussed based on the above-mentioned experimental results. Table 2 Series of abrasive combinations Compared with the AA/TBAA/ATBS copolymer, the grinding speed of the AA/TBAA/AM/ATBS copolymer has increased (Example 1 and Comparative Example). Comparison of 1, Comparison of Example 6 and Comparative Examples 2 and 3).

此外,AA/TBAA/AM共聚物的水溶液無法成為均勻溶液,故未實施研磨試驗(比較例4)。 In addition, the aqueous solution of the AA/TBAA/AM copolymer could not become a uniform solution, so the polishing test was not performed (Comparative Example 4).

實施例2係使實施例1中的無機酸為併用硫酸與磷酸時的結果,其研磨速度提升,光暈有所改善。在實施例7與實施例6的對比中亦發現同樣的情況。 In Example 2, when the inorganic acid in Example 1 was used in combination with sulfuric acid and phosphoric acid, the polishing speed was increased and the halo was improved. The same situation was also found in the comparison between Example 7 and Example 6.

實施例3係將實施例1中的無機酸從硫酸變更為磷酸時的結果,其研磨速度提升,起伏與光暈有所改善。在實施例8與實施例6的對比中亦發現同樣的情況。 Example 3 is the result of changing the inorganic acid in Example 1 from sulfuric acid to phosphoric acid. The polishing speed is increased, and the fluctuation and halo are improved. The same situation was also found in the comparison between Example 8 and Example 6.

實施例4係將實施例1中使用的酸從硫酸變更為HEDP時的結果,其研磨速度提升,起伏與光暈有所改善。在實施例9與實施例6的對比中亦發現同樣的情況。 Example 4 is the result of changing the acid used in Example 1 from sulfuric acid to HEDP. The polishing speed is increased, and the fluctuation and halo are improved. The same situation was also found in the comparison between Example 9 and Example 6.

實施例5係在實施例3中併用磷酸與HEDP時的結果,其起伏與光暈有所改善。在實施例10與實施例8的對比中亦發現同樣的情況。 Example 5 is the result when phosphoric acid and HEDP were used in combination in Example 3, and the undulation and halo were improved. The same situation was also found in the comparison between Example 10 and Example 8.

實施例11係變更實施例5中共聚物的重量平均分子量時的結果,實施例12、13係變更實施例5中膠質氧化矽研磨粒的平均粒徑時的結果。 Example 11 is the result when the weight average molecular weight of the copolymer in Example 5 is changed, and Examples 12 and 13 are the result when the average particle size of the colloidal silica abrasive grains in Example 5 is changed.

表3係研磨劑組合物中的共聚物的TBAA含量為12mol%時的研磨試驗結果,相較於AA/TBAA/ATBS共聚物,AA/TBAA/AM/ATBS共聚物的研磨速度有所提升。(實施例14與比較例5的對比) Table 3 is the grinding test result when the TBAA content of the copolymer in the abrasive composition is 12 mol%. Compared with the AA/TBAA/ATBS copolymer, the grinding speed of the AA/TBAA/AM/ATBS copolymer is improved. (Comparison of Example 14 and Comparative Example 5)

實施例15係使實施例14中的無機酸為併用硫酸與磷酸時的結果,其研磨速度提升,光暈有所改善。 In Example 15, when the inorganic acid in Example 14 was used in combination with sulfuric acid and phosphoric acid, the polishing speed was increased and the halo was improved.

實施例16係將實施例14中的無機酸從硫酸變更為磷酸時的結果,其研磨速度提升,起伏與光暈有所改善。 Example 16 is the result of changing the inorganic acid in Example 14 from sulfuric acid to phosphoric acid. The polishing speed is increased, and the fluctuation and halo are improved.

實施例17將實施例14中使用的酸從硫酸變更為HEDP時的結果,其研磨速度提升,起伏與光暈有所改善。 In Example 17, when the acid used in Example 14 was changed from sulfuric acid to HEDP, the polishing speed was increased, and the fluctuation and halo were improved.

實施例18係在實施例16中併用磷酸與HEDP時的結果,其研磨速度提升,起伏與光暈有所改善。 Example 18 is the result when phosphoric acid and HEDP are used in combination in Example 16. The polishing speed is increased, and the fluctuation and halo are improved.

實施例19係變更實施例18中共聚物的重量平均分子量時的結果,實施例20、21係變更實施例18中膠質氧化矽研磨粒的平均粒徑時的結果。 Example 19 is the result when the weight average molecular weight of the copolymer in Example 18 is changed, and Examples 20 and 21 are the result when the average particle size of the colloidal silica abrasive grains in Example 18 is changed.

由以上結果明顯可知,藉由使用以具有羧酸基之單體、從N-烷基丙烯醯胺或N-烷基甲基丙烯醯胺中選擇之單體、從丙烯醯胺或甲基丙烯醯胺中選擇之單體及具有磺酸基之單體為必要單體的共聚物來作為研磨劑組合物中的水溶性高分子化合物,可得到研磨速度、起伏、光暈的平衡良好的產物。 From the above results, it is obvious that by using a monomer having a carboxylic acid group, a monomer selected from N-alkyl acrylamide or N-alkyl methacrylamide, from acrylamide or methacrylamide A copolymer of monomers selected from amides and monomers with sulfonic acid groups as essential monomers is used as the water-soluble polymer compound in the abrasive composition to obtain a product with a good balance of polishing speed, undulation, and halo. .

[產業上的可利用性] [Industrial availability]

本發明之研磨劑組合物可用於半導體、硬碟等的磁記錄媒體等電子零件的研磨。特別可用於玻璃磁碟或鋁磁碟等的磁記錄媒體用基板的表面研磨。再者,可用於在鋁合金製基板表面上形成有無電解鎳-磷鍍覆薄膜之磁記錄媒體用鋁基板的表面研磨。 The abrasive composition of the present invention can be used for polishing electronic parts such as magnetic recording media such as semiconductors and hard disks. Particularly, it can be used to polish the surface of substrates for magnetic recording media such as glass disks and aluminum disks. Furthermore, it can be used for surface polishing of aluminum substrates for magnetic recording media on which an electroless nickel-phosphorus plating film is formed on the surface of aluminum alloy substrates.

Claims (9)

一種磁碟基板用研磨劑組合物,包含膠質氧化矽、水溶性高分子化合物、酸及水, An abrasive composition for magnetic disk substrates, comprising colloidal silica, water-soluble polymer compounds, acid and water, 其中該水溶性高分子化合物係以具有羧酸基之單體、從N-烷基丙烯醯胺或N-烷基甲基丙烯醯胺中選擇之單體、從丙烯醯胺或甲基丙烯醯胺中選擇之單體及具有磺酸基之單體為必要單體的共聚物。 Among them, the water-soluble polymer compound is a monomer having a carboxylic acid group, a monomer selected from N-alkyl acrylamide or N-alkyl methacrylamide, and a monomer selected from acrylamide or methacrylamide. A copolymer in which monomers selected from amines and monomers with sulfonic acid groups are essential monomers. 如請求項1之磁碟基板用研磨劑組合物,其中該酸為含磷之無機酸及/或含磷之有機酸。 The abrasive composition for magnetic disk substrates of claim 1, wherein the acid is an inorganic acid containing phosphorus and/or an organic acid containing phosphorus. 如請求項1或2之磁碟基板用研磨劑組合物,其中該水溶性高分子化合物中, According to claim 1 or 2, the abrasive composition for magnetic disk substrates, wherein the water-soluble polymer compound, 源自具有羧酸基之單體的構成單元的比例在50~95mol%的範圍, The ratio of constituent units derived from monomers having carboxylic acid groups is in the range of 50 to 95 mol%, 源自從N-烷基丙烯醯胺或N-烷基甲基丙烯醯胺中選擇之單體的構成單元的比例在5~40mol%的範圍, The ratio of constituent units derived from monomers selected from N-alkyl acrylamide or N-alkyl methacrylamide is in the range of 5-40 mol%, 源自從丙烯醯胺或甲基丙烯醯胺中選擇之單體的構成單元的比例在0.3~10mol%的範圍, The ratio of constituent units derived from monomers selected from acrylamide or methacrylamide is in the range of 0.3-10 mol%, 源自具有磺酸基之單體的構成單元的比例在0.01~20mol%的範圍。 The ratio of the structural unit derived from the monomer having a sulfonic acid group is in the range of 0.01 to 20 mol%. 如請求項1至3中任一項之磁碟基板用研磨劑組合物,其中該具有羧酸基之單體係選自丙烯酸或其鹽、及甲基丙烯酸或其鹽的單體。 The abrasive composition for a magnetic disk substrate according to any one of claims 1 to 3, wherein the single system having a carboxylic acid group is selected from monomers of acrylic acid or a salt thereof, and methacrylic acid or a salt thereof. 如請求項1至4中任一項之磁碟基板用研磨劑組合物,其中該具有磺酸基之單體係選自異戊二烯磺酸、2-丙烯醯胺-2-甲基丙磺酸、2-甲基丙烯醯胺-2-甲基丙磺酸、苯乙烯磺酸、乙烯磺酸、烯丙基磺酸、異戊烯磺酸、萘磺酸及該等之鹽的單體。 The abrasive composition for a magnetic disk substrate according to any one of claims 1 to 4, wherein the single system having a sulfonic acid group is selected from isoprene sulfonic acid, 2-propenamide-2-methylpropane Sulfonic acid, 2-methacrylamide-2-methylpropane sulfonic acid, styrene sulfonic acid, vinyl sulfonic acid, allyl sulfonic acid, isopentene sulfonic acid, naphthalene sulfonic acid and the mono body. 如請求項2之磁碟基板用研磨劑組合物,其中該含磷之無機酸係選自由磷酸、膦酸、次膦酸、焦磷酸及三聚磷酸所構成之群組的至少1 種以上之化合物。 The abrasive composition for magnetic disk substrates of claim 2, wherein the phosphorus-containing inorganic acid is at least 1 selected from the group consisting of phosphoric acid, phosphonic acid, phosphinic acid, pyrophosphoric acid and tripolyphosphoric acid More than kind of compounds. 如請求項2之磁碟基板用研磨劑組合物,其中該含磷之有機酸係選自由2-胺基乙基膦酸、1-羥基亞乙基-1,1-二膦酸、胺基三(亞甲基膦酸)、乙二胺四(亞甲基膦酸)、二伸乙三胺五(亞甲基膦酸)、乙烷-1,1-二膦酸、乙烷-1,1,2-三膦酸、乙烷-1-羥基-1,1,2-三膦酸、乙烷-1,2-二羧基-1,2-二膦酸、甲烷羥基膦酸、2-膦醯基丁烷-1,2-二羧酸、1-膦醯基丁烷-2,3,4-三羧酸及α-甲基膦醯基琥珀酸所構成之群組的至少1種以上之化合物。 The abrasive composition for magnetic disk substrates of claim 2, wherein the phosphorus-containing organic acid is selected from 2-aminoethylphosphonic acid, 1-hydroxyethylene-1,1-diphosphonic acid, and amino Tris (methylene phosphonic acid), ethylene diamine tetra (methylene phosphonic acid), diethylene triamine penta (methylene phosphonic acid), ethane-1,1-diphosphonic acid, ethane-1 , 1,2-triphosphonic acid, ethane-1-hydroxy-1,1,2-triphosphonic acid, ethane-1,2-dicarboxy-1,2-diphosphonic acid, methane hydroxyphosphonic acid, 2 -Phosphosinobutane-1,2-dicarboxylic acid, 1-phosphosinobutane-2,3,4-tricarboxylic acid and at least 1 of the group consisting of α-methylphosphosuccinic acid More than kind of compounds. 如請求項1至7中任一項之磁碟基板用研磨劑組合物,其中該研磨劑組合物進一步含有氧化劑。 The abrasive composition for a magnetic disk substrate according to any one of claims 1 to 7, wherein the abrasive composition further contains an oxidizing agent. 如請求項1至8中任一項之磁碟基板用研磨劑組合物,其係用於研磨經無電解鎳-磷鍍覆之鋁磁碟基板。 The abrasive composition for a magnetic disk substrate according to any one of claims 1 to 8, which is used for polishing an aluminum magnetic disk substrate plated with electroless nickel-phosphorus.
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