TW202130424A - Substrate processing apparatus and substrate processing method - Google Patents

Substrate processing apparatus and substrate processing method Download PDF

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TW202130424A
TW202130424A TW109146231A TW109146231A TW202130424A TW 202130424 A TW202130424 A TW 202130424A TW 109146231 A TW109146231 A TW 109146231A TW 109146231 A TW109146231 A TW 109146231A TW 202130424 A TW202130424 A TW 202130424A
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substrate
processing
processing liquid
storage space
horizontal direction
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TWI792129B (en
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高橋朋宏
岸田拓也
折坂昌幸
武知圭
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日商斯庫林集團股份有限公司
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Abstract

The present invention is provided with: a processing-solution discharge part that is provided below a substrate held on a substrate holding part and that discharges a processing solution from a processing-solution discharge port towards an internal bottom surface of a storage space; and an air-bubble supply part that is provided below the substrate held on the substrate holding part and above the processing-solution discharge port and that supplies air bubbles to the processing solution stored in the storage space. Between the air-bubble supply part and the processing-solution discharge port in the vertical direction, at least a portion of a processing solution flowing upward via the internal bottom surface of the storage space is made to serve as a liquid to be split, and the flow of the liquid to be split is split into a plurality of upward flows, which are guided to the substrate held on the substrate holding part.

Description

基板處理裝置及基板處理方法Substrate processing device and substrate processing method

本發明係關於一面使藥液或純水等處理液自處理槽溢流,一面將基板浸漬於貯存在處理槽之處理液而進行處理之基板處理裝置及基板處理方法者。The present invention relates to a substrate processing apparatus and a substrate processing method for processing a substrate by immersing a substrate in the processing liquid stored in the processing tank while overflowing a processing liquid such as a chemical solution or pure water from a processing tank.

以下所示之日本申請案之說明書、圖式及申請專利範圍之揭示內容以引用之方式將其全部內容併入至本說明書中: 日本特願2019-236759號(2019年12月26日申請)。 日本特願2020-136163號(2020年8月12日申請)。The following descriptions of the Japanese application, drawings, and the disclosure of the scope of the patent application are incorporated into this specification by reference in their entirety: Japan Special Application No. 2019-236759 (application on December 26, 2019). Japan Special Application No. 2020-136163 (application on August 12, 2020).

於半導體裝置之製造領域中,為應對半導體裝置之高密度化與大容量化,期望形成高縱橫比之凹部之技術。例如,三維NAND型非揮發性半導體裝置(以下,稱為「3D-NAND記憶體」)之製造過程中,包含以下步驟:對積層有多個氧化矽膜(SiO2膜)與氮化矽膜(SiN膜)之積層體,於積層方向形成凹部後,經由凹部將SiN膜藉由濕蝕刻去除。為執行該步驟,例如研討使用日本專利特開2016-200821號公報所記載之基板處理裝置。In the field of semiconductor device manufacturing, in order to cope with the increase in density and capacity of semiconductor devices, a technology for forming recesses with a high aspect ratio is desired. For example, the manufacturing process of a three-dimensional NAND-type non-volatile semiconductor device (hereinafter referred to as "3D-NAND memory") includes the following steps: stacking multiple silicon oxide films (SiO2 films) and silicon nitride films ( In the laminate of SiN film), after forming recesses in the laminating direction, the SiN film is removed by wet etching through the recesses. In order to perform this step, for example, the substrate processing apparatus described in Japanese Patent Laid-Open No. 2016-200821 is discussed and used.

使用基板處理裝置進行上述濕蝕刻之情形時,可使用SiN膜之蝕刻劑之一例即包含磷酸之藥液作為處理液。更具體而言,基板處理裝置中,在形成於處理槽內部之貯存空間之內底部配置噴出管,自該噴出管對貯存空間供給處理液。因此,處理槽中,處理液一面自處理槽溢流一面以特定量貯存於處理槽中。且,將具有上述凹部構造之基板浸漬於貯存在處理槽之處理液中。又,基板處理裝置中,與噴出管同樣,將氣泡供給管配置於貯存空間之內底部,自貯存空間之內底部朝溢流面供給氣泡。該等氣泡於處理液中上升並被供給於基板。藉由如此對基板供給氣泡,可對凹部迅速且連續地供給新鮮處理液。In the case of using a substrate processing apparatus to perform the above-mentioned wet etching, a chemical solution containing phosphoric acid, which is an example of an etchant for the SiN film, can be used as the processing liquid. More specifically, in the substrate processing apparatus, an ejection pipe is arranged at the inner bottom of the storage space formed in the processing tank, and the processing liquid is supplied from the ejection pipe to the storage space. Therefore, in the treatment tank, the treatment liquid is stored in the treatment tank in a specific amount while overflowing from the treatment tank. And, the substrate having the above-mentioned recessed portion structure is immersed in the processing liquid stored in the processing tank. Moreover, in the substrate processing apparatus, like the ejection pipe, the bubble supply pipe is arranged at the inner bottom of the storage space, and the bubbles are supplied from the inner bottom of the storage space toward the overflow surface. The bubbles rise in the processing liquid and are supplied to the substrate. By supplying air bubbles to the substrate in this way, it is possible to quickly and continuously supply fresh processing liquid to the recessed portion.

然而,日本專利特開2016-200821號公報所記載之裝置中,存在如下之問題。藉由自噴出管噴出處理液而於貯存空間內形成朝向溢流面之液流,即處理液之上升流。且,雖到達貯存空間之上方開口之大多處理液溢流,但一部分未溢流而自溢流面之附近朝下流動。於貯存空間內產生所謂之下降流。該下降流阻礙氣泡朝向溢流面上升,成為降低對基板均一供給氣泡之主要原因之一。其結果,產生基板處理之品質降低。However, the device described in Japanese Patent Laid-Open No. 2016-200821 has the following problems. The treatment liquid is sprayed from the spray pipe to form a liquid flow toward the overflow surface in the storage space, that is, an upward flow of the treatment liquid. Moreover, although most of the processing liquid reaching the upper opening of the storage space overflows, a part of it does not overflow and flows downward from the vicinity of the overflow surface. A so-called downflow is generated in the storage space. This descending flow prevents bubbles from rising toward the overflow surface, and becomes one of the main reasons for reducing the uniform supply of bubbles to the substrate. As a result, the quality of substrate processing is reduced.

本發明係鑑於上述問題而完成者,目的在於,於一面使處理液自處理槽溢流一面將基板浸漬於貯存在處理槽之處理液,且於處理液中對上述基板供給氣泡而進行處理之基板處理技術中,對基板均一供給氣泡,提高處理品質。The present invention was made in view of the above-mentioned problems, and its object is to immerse the substrate in the processing liquid stored in the processing tank while allowing the processing liquid to overflow from the processing tank, and supply bubbles in the processing liquid to process the substrate. In substrate processing technology, air bubbles are uniformly supplied to the substrate to improve processing quality.

本發明之第1態樣係一種基板處理裝置,其特徵在於具備:處理槽,其具有貯存處理液之貯存空間,一面使處理液自貯存空間之上方開口溢流、一面將基板浸漬於貯存在貯存空間之處理液,而對基板進行處理;基板保持部,其於貯存空間內將基板以豎立姿勢保持;處理液噴出部,其具有在保持於基板保持部之基板之下方側噴出處理液之處理液噴出口,使自處理液噴出口噴出之處理液朝向貯存空間之內底面流動;及氣泡供給部,其設置在保持於基板保持部之基板之下方側且處理液噴出口之上方側,對貯存於貯存空間之處理液供給氣泡;於鉛直方向上且氣泡供給部與貯存空間之內底面之間,將經由貯存空間之內底面朝上方流動之處理液之至少一部分作為分流對象液,將分流對象液之流體分流成複數個上升流而向保持於基板保持部之基板引導。The first aspect of the present invention is a substrate processing apparatus, which is characterized by comprising: a processing tank having a storage space for storing a processing liquid, while allowing the processing liquid to overflow from the upper opening of the storage space, while immersing the substrate in the storage space The processing liquid in the storage space is used to process the substrate; the substrate holding section holds the substrate in an upright position in the storage space; the processing liquid ejection section has a processing liquid ejecting section below the substrate held in the substrate holding section The processing liquid ejection port allows the processing liquid ejected from the processing liquid ejection port to flow toward the inner bottom surface of the storage space; and the bubble supply portion, which is provided on the lower side of the substrate held in the substrate holding portion and above the processing liquid ejection port, Supply bubbles to the processing liquid stored in the storage space; in the vertical direction, between the bubble supply part and the inner bottom surface of the storage space, use at least a part of the processing liquid flowing upward through the inner bottom surface of the storage space as the diversion target liquid. The fluid of the branching target liquid is branched into a plurality of upward flows and guided to the substrate held by the substrate holding portion.

又,本發明之第2態樣係一種基板處理方法,其特徵在於具備:溢流步驟,其藉由對設置於處理槽之貯存空間噴出處理液而於貯存空間貯存處理液,且使處理液自貯存空間之上方開口溢流;浸漬步驟,其使基板浸漬於貯存在貯存空間之處理液;及氣泡供給步驟,其從浸漬於貯存空間內之處理液之基板之下方側,自氣泡供給部供給氣泡;且溢流步驟與浸漬步驟及氣泡供給步驟並行進行,在氣泡供給部與貯存空間之內底面之間,將經由貯存空間之內底面朝上方流動之處理液之流體之至少一部分分流成複數個上升流而向基板引導。In addition, a second aspect of the present invention is a substrate processing method, which is characterized by comprising: an overflow step of storing the processing liquid in the storage space by spraying the processing liquid to the storage space provided in the processing tank, and making the processing liquid Overflow from the upper opening of the storage space; immersion step, which immerses the substrate in the processing liquid stored in the storage space; and bubble supply step, which starts from the bubble supply part from the lower side of the substrate immersed in the processing liquid in the storage space Supply bubbles; and the overflow step is performed in parallel with the immersion step and the bubble supply step. Between the bubble supply part and the inner bottom surface of the storage space, at least a part of the fluid of the treatment liquid flowing upward through the inner bottom surface of the storage space is divided into A plurality of upward flows are guided to the substrate.

如上所述,根據本發明,在貯存於貯存空間之處理液內廣泛分散形成大量上升流,抑制貯存空間內之下降流之產生。其結果,可對基板均一供給氣泡,以高品質進行基板處理。As described above, according to the present invention, a large amount of upward flow is widely dispersed in the treatment liquid stored in the storage space, and the generation of downward flow in the storage space is suppressed. As a result, bubbles can be uniformly supplied to the substrate, and substrate processing can be performed with high quality.

上述之本發明之各態樣具有之複數個構成要件並非必要者,為解決上述問題之一部分或全部,或為達成本說明書中記載之效果之一部分或全部,可適當對上述複數個構成要件之一部分構成要件進行變更、刪除或替換為新的其他構成要件,刪除限定內容之一部分。又,為解決上述問題之一部分或全部,或為達成本說明書中記載之效果之一部分或全部,亦可使上述之本發明之一態樣所含之技術性特徵之一部分或全部與上述之本發明之其他態樣所含之技術性特徵之一部分或全部組合,而作為本發明之獨立之一形態。Where the plural constituent elements of the various aspects of the present invention described above are not necessary, in order to solve part or all of the above-mentioned problems, or to achieve part or all of the effects described in the specification, one of the plural constituent elements may be appropriately adjusted. Some constituent elements are changed, deleted, or replaced with new other constituent elements, and part of the restricted content is deleted. In addition, in order to solve part or all of the above-mentioned problems, or to achieve part or all of the effects described in the specification, part or all of the technical features contained in one aspect of the above-mentioned invention can also be combined with the above-mentioned essence. Part or all of the technical features contained in other aspects of the invention are combined as an independent aspect of the present invention.

圖1係顯示裝備本發明之基板處理裝置之第1實施形態之基板處理系統之概略構成的俯視圖。基板處理系統1具備收納器載置部2、擋板驅動機構3、基板移載機器人4、姿勢轉換機構5、推桿6、基板搬送機構7、處理單元8、及控制部9。為統一顯示以下各圖之方向,如圖1所示,設定XYZ正交座標軸。此處,XY平面表示水平面。又,Z軸表示鉛直軸,更詳細而言,Z方向為鉛直方向。Fig. 1 is a plan view showing a schematic configuration of a substrate processing system equipped with a first embodiment of the substrate processing apparatus of the present invention. The substrate processing system 1 includes a container placement unit 2, a shutter drive mechanism 3, a substrate transfer robot 4, a posture conversion mechanism 5, a push rod 6, a substrate transport mechanism 7, a processing unit 8, and a control unit 9. In order to display the directions of the following figures uniformly, as shown in Figure 1, set the XYZ orthogonal coordinate axis. Here, the XY plane represents the horizontal plane. In addition, the Z axis means the vertical axis, and more specifically, the Z direction is the vertical direction.

收納器載置部2中,載置收納有基板W之收納器。本實施形態中,作為收納器之一例,使用構成為可將水平姿勢之複數塊(例如25塊)基板W以於Z方向積層之狀態收納之環帶F。環帶F以收納有未處理基板W之狀態載置於收納器載置部2,或為收納已處理基板W,而以空的狀態載置於收納器載置2。收納於環帶F之基板W於本實施形態中,為形成3D-NAND記憶體之半導體晶圓,具有高縱橫比之凹部。In the container mounting part 2, a container in which the substrate W is stored is mounted. In this embodiment, as an example of the container, an endless belt F configured to store a plurality of (for example, 25) substrates W in a horizontal posture in a stacked state in the Z direction is used. The endless belt F is placed on the container mount 2 in a state where the unprocessed substrate W is stored, or is placed on the container mount 2 in an empty state in order to store the processed substrate W. In this embodiment, the substrate W accommodated in the endless belt F is a semiconductor wafer forming a 3D-NAND memory and has a concave portion with a high aspect ratio.

於(+Y)方向側與收納器載置部2相鄰之製程空間內,配置有擋板驅動機構3、基板移載機器人4、姿勢轉換機構5、推桿6、基板搬送機構7及處理單元8。收納器載置部2與製程空間由裝備開閉自如之擋板31之隔板(省略圖示)劃分。擋板31連接於擋板驅動機構3。擋板驅動機構3根據來自控制部9之閉指令,關閉擋板31,將收納器載置部2與製程空間空間性分離。相反,擋板驅動機構3根據來自控制部9之開指令,打開擋板31,使收納器載置部2與製程空間連通。藉此,可自環帶F向製程空間搬入未處理基板W、及將處理完畢基板W向環帶F搬出。In the process space adjacent to the container placement part 2 on the (+Y) direction side, a shutter drive mechanism 3, a substrate transfer robot 4, a posture conversion mechanism 5, a push rod 6, a substrate transfer mechanism 7 and a processing Unit 8. The container placement portion 2 and the process space are partitioned by a partition plate (not shown) equipped with a baffle 31 that can be opened and closed. The baffle 31 is connected to the baffle driving mechanism 3. The shutter drive mechanism 3 closes the shutter 31 according to a closing command from the control unit 9 to spatially separate the container placement unit 2 from the process space. On the contrary, the shutter driving mechanism 3 opens the shutter 31 in accordance with the opening command from the control unit 9 so that the container placement unit 2 communicates with the process space. Thereby, the unprocessed substrate W can be carried in from the endless belt F to the process space, and the processed substrate W can be carried out to the endless belt F.

上述之基板W之搬入搬出處理由基板移載機器人4進行。基板移載機器人4於水平面內轉動自如地構成。基板移載機器人4於打開擋板31之狀態下,於姿勢轉換機構5與環帶F間交接複數塊基板W。又,姿勢轉換機構5經由基板移載機器人4自環帶F接收到基板W後,或將基板W交接給環帶F前,將複數塊基板W之姿勢於豎立姿勢與水平姿勢間進行轉換。The above-mentioned loading and unloading processing of the substrate W is performed by the substrate transfer robot 4. The substrate transfer robot 4 is configured to be rotatable in a horizontal plane. The substrate transfer robot 4 transfers a plurality of substrates W between the posture conversion mechanism 5 and the endless belt F with the shutter 31 opened. After receiving the substrate W from the endless belt F via the substrate transfer robot 4, or before transferring the substrate W to the endless belt F, the posture conversion mechanism 5 switches the postures of the plurality of substrates W between the vertical posture and the horizontal posture.

於姿勢轉換機構5之基板搬送機構7側(該圖中之+X方向側)配置推桿6,於姿勢轉換機構5與基板搬送機構7間交接豎立姿勢之複數塊基板W。又,基板搬送機構7如該圖所示,自與推桿6對向之位置(以下,稱為「待機位置」)沿排列有構成處理單元8之處理部81~85之排列方向(該圖中之Y方向)於水平方向移動。The push rod 6 is arranged on the substrate transport mechanism 7 side of the posture conversion mechanism 5 (the +X direction side in the figure), and a plurality of substrates W in the erect posture are transferred between the posture conversion mechanism 5 and the substrate transport mechanism 7. In addition, as shown in the figure, the substrate transport mechanism 7 is arranged along the arrangement direction of the processing units 81 to 85 constituting the processing unit 8 from a position facing the push rod 6 (hereinafter referred to as the "standby position") (this figure The Y direction) moves in the horizontal direction.

基板搬送機構7具備一對懸垂臂71。藉由該一對懸垂臂71之搖動,可切換複數塊基板W之一次保持與解除保持。更具體而言,使各臂71之下緣於相互離開之方向繞水平軸搖動,放開複數塊基板W,使各臂71之下緣於相互接近之方向繞水平軸搖動,夾持並保持複數塊基板W。又,雖省略對圖1之圖示,但基板搬送機構7具有臂移動部與臂搖動部。該等中之臂移動部具有使一對懸垂臂71沿排列有處理部81~85之排列方向Y水平移動之功能。因此,藉由該水平移動,將一對懸垂臂71定位於與處理部81~85各者對向之位置(以下,稱為「處理位置」)及待機位置。The substrate transport mechanism 7 includes a pair of suspension arms 71. By the shaking of the pair of suspension arms 71, it is possible to switch between holding and releasing the holding of a plurality of substrates W. More specifically, the bottom of each arm 71 is swayed around the horizontal axis in the direction away from each other, the plurality of substrates W are released, and the bottom of each arm 71 is swayed around the horizontal axis in the direction of approaching each other, clamped and held Multiple substrates W. In addition, although illustration of FIG. 1 is omitted, the substrate transport mechanism 7 has an arm moving part and an arm swinging part. Among them, the arm moving part has a function of horizontally moving the pair of suspension arms 71 in the arrangement direction Y in which the treatment parts 81 to 85 are arranged. Therefore, by this horizontal movement, the pair of suspension arms 71 are positioned at a position facing each of the processing parts 81 to 85 (hereinafter, referred to as a "processing position") and a standby position.

另一方面,臂搖動部具有執行上述臂搖動動作之功能,切換夾持基板W並保持之保持狀態、與解除基板W之夾持之解除狀態。因此,藉由該切換動作、及作為處理部81、82之基板保持部發揮功能之升降機810a或作為處理部83、84之基板保持部發揮功能之升降機810b之上下移動,而可進行升降機810與懸垂臂71間之基板W之交接。又,於與處理部85對向之處理位置,可進行處理部85與懸垂臂71間之基板W之交接。再者,於待機位置,可經由推桿6進行姿勢轉換機構5與懸垂臂71間之基板W之交接。On the other hand, the arm rocking part has the function of performing the above-mentioned arm rocking action, switching between a holding state in which the substrate W is clamped and held, and a released state in which the substrate W is released from the clamp. Therefore, by this switching operation, the elevator 810a that functions as the substrate holding portion of the processing sections 81 and 82 or the elevator 810b that functions as the substrate holding portion of the processing sections 83 and 84 move up and down, so that the elevator 810 and The transfer of the substrate W between the suspension arms 71. In addition, at the processing position facing the processing section 85, the substrate W between the processing section 85 and the suspension arm 71 can be transferred. Furthermore, in the standby position, the substrate W between the posture conversion mechanism 5 and the suspension arm 71 can be transferred via the push rod 6.

於處理單元8,如上述般設有5個處理部81~85,分別作為第1藥液處理部81、第1清洗處理部82、第2藥液處理部83、第2清洗處理部84及乾燥處理部85發揮功能。其中第1藥液處理部81及第2藥液處理部83分別將同種或不同種藥液貯存於處理槽821,使複數塊基板W一次浸漬於該藥液中,實施藥液處理。第1清洗處理部82及第2清洗處理部84分別係將清洗液(例如純水)貯存於處理槽821,使複數塊基板W一次浸漬於該清洗液中,對表示實施清洗處理者。該等第1藥液處理部81、第1清洗處理部82、第2藥液處理部83及第2清洗處理部84相當於本發明之基板處理裝置之第1實施形態,雖處理液之種類不同但裝置之基本構成相同。另,對於裝置構成及動作,於下文參照圖2至圖5且予以詳述。The processing unit 8 is provided with five processing sections 81 to 85 as described above, which are respectively a first liquid chemical processing section 81, a first cleaning processing section 82, a second chemical liquid processing section 83, a second cleaning processing section 84, and The drying processing unit 85 functions. Among them, the first chemical solution processing unit 81 and the second chemical solution processing unit 83 respectively store the same or different chemical solutions in the processing tank 821, so that a plurality of substrates W are immersed in the chemical solution at a time, and the chemical solution treatment is performed. The first cleaning processing unit 82 and the second cleaning processing unit 84 respectively store a cleaning liquid (for example, pure water) in the processing tank 821, and immerse a plurality of substrates W in the cleaning liquid at a time to indicate the person performing the cleaning treatment. The first chemical liquid processing unit 81, the first cleaning processing unit 82, the second chemical liquid processing unit 83, and the second cleaning processing unit 84 correspond to the first embodiment of the substrate processing apparatus of the present invention, regardless of the type of processing liquid Different but the basic structure of the device is the same. In addition, the structure and operation of the device will be described in detail below with reference to FIGS. 2 to 5.

如圖1所示,第1藥液處理部81及與其相鄰之第1清洗處理部82成對,第2藥液處理部83及與其相鄰之第2清洗處理部84成對。且,升降機810a於第1藥液處理部81及第1清洗處理部82中不僅作為本發明之「基板保持部」發揮功能,亦作為用以將經第1藥液處理部81藥液處理之基板W移送至第1清洗處理部82之專用搬送機構發揮功能。又,升降機810b於第2藥液處理部83及第2清洗處理部84中不僅作為本發明之「基板保持部」發揮功能,亦作為用以將經第2藥液處理部83藥液處理之基板W移送至第2清洗處理部84之專用搬送機構發揮功能。As shown in FIG. 1, the first chemical solution processing section 81 and the adjacent first cleaning processing section 82 are paired, and the second chemical solution processing section 83 and the adjacent second cleaning processing section 84 are paired. In addition, the elevator 810a not only functions as the "substrate holding portion" of the present invention in the first chemical solution processing section 81 and the first cleaning processing section 82, but also serves as a mechanism for processing the chemical solution by the first chemical solution processing section 81. The dedicated transfer mechanism for transferring the substrate W to the first cleaning processing unit 82 functions. In addition, the elevator 810b not only functions as the "substrate holding portion" of the present invention in the second chemical solution processing section 83 and the second cleaning processing section 84, but also serves as a mechanism for processing the chemical solution by the second chemical solution processing section 83. The dedicated transport mechanism that transports the substrate W to the second cleaning processing unit 84 functions.

如此構成之處理單元8中,升降機810a之3根支持構件(圖2中之符號812)自基板搬送機構7之一對懸垂臂71一次接收複數塊基板W,如下文所詳述,使之一面執行使處理液自處理槽溢流之溢流步驟、及對貯存於處理槽之處理液內供給氣泡之氣泡供給步驟,一面下降至第1藥液處理部81之處理槽中,並浸漬於藥液中(浸漬步驟)。再者,等待特定藥液處理時間後,升降機810a將保持複數塊基板W之支持構件自藥液中提起,橫移至第1清洗處理部82,進而使保持有藥液處理完畢之基板W之狀態之支持構件,朝第1清洗處理部82之處理槽(圖2中之符號821)內下降,並浸漬於清洗液中。等待特定清洗處理時間後,升降機810a使保持有清洗處理完畢之基板W之狀態之支持構件上升,將基板W自清洗液中提起。其後,將複數塊基板W自升降機810a之支持構件一次交給基板搬送機構7之一對懸垂臂71。In the processing unit 8 thus constructed, the three supporting members (symbol 812 in FIG. 2) of the elevator 810a receive a plurality of substrates W at a time from one of the pair of suspension arms 71 of the substrate conveying mechanism 7, as described in detail below, one side Perform the overflow step of overflowing the processing liquid from the processing tank and the bubble supply step of supplying bubbles to the processing liquid stored in the processing tank, while descending to the processing tank of the first chemical liquid processing part 81 and immersed in the chemical In liquid (dipping step). Furthermore, after waiting for a specific chemical solution processing time, the elevator 810a lifts the supporting member holding the plurality of substrates W from the chemical solution and moves it horizontally to the first cleaning processing section 82, thereby holding the substrates W that have been processed by the chemical solution. The supporting member in the state descends into the treatment tank (symbol 821 in FIG. 2) of the first cleaning treatment section 82, and is immersed in the cleaning liquid. After waiting for a specific cleaning treatment time, the elevator 810a raises the supporting member holding the substrate W that has been cleaned, and lifts the substrate W from the cleaning solution. Thereafter, a plurality of substrates W are delivered from the supporting member of the elevator 810a to one of the pair of suspension arms 71 of the substrate conveying mechanism 7 at a time.

升降機810b亦同樣,自基板搬送機構7之一對懸垂臂71一次接收複數塊基板W,使該等複數塊基板W下降至第2藥液處理部83之處理槽821中,並浸漬於藥液中。再者,等待特定藥液處理時間後,升降機810b使支持構件上升,將藥液處理完畢之複數塊基板W自藥液中提起,使支持構件橫移至第2清洗處理部84之處理槽,進而使該支持構件朝第2清洗處理部84之處理槽821內下降,並浸漬於清洗液中。等待特定清洗處理時間後,第2升降機810b使支持構件上升,將基板W自清洗液中提起。其後,將複數塊基板W自第2升降機810b一次交給基板搬送機構7。另,亦可構成為於第1藥液處理部81、第1清洗處理部82、第2藥液處理部83及第2清洗處理部84之各者,設置作為本發明之「基板保持部」發揮功能之升降機,另一方面,以基板搬送機構7或專用之搬送機構進行基板W對處理部81~84之搬入搬出。Similarly, the elevator 810b receives a plurality of substrates W at a time from one of the substrate transport mechanism 7 to the suspension arm 71, and lowers the plurality of substrates W into the processing tank 821 of the second chemical solution processing section 83, and is immersed in the chemical solution middle. Furthermore, after waiting for a specific chemical solution processing time, the elevator 810b raises the support member, lifts the plurality of substrates W that have been processed by the chemical solution from the chemical solution, and moves the support member to the processing tank of the second cleaning processing section 84. Furthermore, the support member is lowered into the treatment tank 821 of the second cleaning treatment section 84 and immersed in the cleaning liquid. After waiting for a specific cleaning process time, the second elevator 810b raises the supporting member and lifts the substrate W from the cleaning liquid. After that, the plurality of substrates W are delivered to the substrate conveying mechanism 7 at a time from the second elevator 810b. In addition, it can also be configured that each of the first chemical solution processing unit 81, the first cleaning processing unit 82, the second chemical solution processing unit 83, and the second cleaning processing unit 84 is provided as the "substrate holding portion" of the present invention. The functional elevator, on the other hand, carries the substrate W into and out of the processing units 81 to 84 by the substrate transport mechanism 7 or a dedicated transport mechanism.

乾燥處理部85係如下者:具有可將複數塊(例如52塊)基板W以豎立姿勢排列之狀態保持之基板保持構件(省略圖示),藉由於減壓氛圍中將有機溶劑(異丙醇等)供給於基板W,或藉由離心力甩掉基板W表面之液體成分,而使基板W乾燥。該乾燥處理部85構成為可與基板搬送機構7之一對懸垂臂71間交接基板W。且,一次自基板搬送機構7接收清洗處理後之複數塊基板W,對該等複數塊基板W實施乾燥處理。又,乾燥處理後,將複數塊基板W一次自基板保持構件交給基板搬送機構7。The drying processing section 85 is one having a substrate holding member (not shown) that can hold a plurality of (for example, 52) substrates W arranged in an upright position, and the organic solvent (isopropanol) Etc.) It is supplied to the substrate W, or the liquid component on the surface of the substrate W is shaken off by centrifugal force to dry the substrate W. The drying processing unit 85 is configured to be able to transfer the substrate W between a pair of suspension arms 71 of the substrate conveying mechanism 7. In addition, the plurality of substrates W after the cleaning process are received from the substrate transport mechanism 7 at a time, and the plurality of substrates W are dried. In addition, after the drying process, a plurality of substrates W are delivered from the substrate holding member to the substrate conveying mechanism 7 at a time.

接著,針對本發明之基板處理裝置進行說明。圖1所示之基板處理系統所裝備之第1藥液處理部81、第1清洗處理部82、第2藥液處理部83及第2清洗處理部84中,使用之處理液有所不同,但裝置構成及動作基本相同。因此,以下,針對相當於本發明之基板處理裝置之第1實施形態之第1藥液處理部81之構成及動作進行說明,省略第1清洗處理部82、第2藥液處理部83及第2清洗處理部84相關之說明。Next, the substrate processing apparatus of the present invention will be described. The substrate processing system shown in FIG. 1 is equipped with the first chemical liquid processing unit 81, the first cleaning processing unit 82, the second chemical liquid processing unit 83, and the second cleaning processing unit 84. The processing liquids used are different. But the device structure and action are basically the same. Therefore, in the following, the configuration and operation of the first liquid chemical processing unit 81 corresponding to the first embodiment of the substrate processing apparatus of the present invention will be described, and the first cleaning processing unit 82, the second chemical liquid processing unit 83, and the second liquid chemical processing unit will be omitted. 2Description about the cleaning processing unit 84.

圖2係顯示本發明之基板處理裝置之第1實施形態之概略構成之模式圖。圖3係模式性顯示圖2所示之基板處理裝置之主要構成之分解組裝立體圖。圖4係圖2之局部剖視圖。圖5係顯示保持於升降機之複數塊基板與氣泡噴出口之配置關係之模式圖。第1藥液處理部81例如為使用包含磷酸之藥液作為處理液,經由形成於基板W之表面之凹部將氮化矽膜蝕刻去除之裝置。該第1藥液處理部81如圖2及圖3所示,具備用以對基板W進行第1藥液處理之處理槽821。該處理槽821具有上方開口之盒構造,該盒構造由俯視時呈長方形之底壁821a、及自底壁821a周圍立起之4個側壁821b~821e構成。因此,處理槽821可一面於由底壁821a與側壁821b~821e包圍之貯存空間821f內貯存處理液,一面一次浸漬保持於升降機810a之複數塊基板W。又,處理槽821具有朝(+Z)方向開口之上方開口821g,可使處理液自該貯存空間821f溢流。Fig. 2 is a schematic diagram showing a schematic configuration of the first embodiment of the substrate processing apparatus of the present invention. FIG. 3 is an exploded and assembled perspective view schematically showing the main components of the substrate processing apparatus shown in FIG. 2. Fig. 4 is a partial cross-sectional view of Fig. 2. Fig. 5 is a schematic diagram showing the arrangement relationship between a plurality of substrates held in the elevator and the bubble ejection port. The first chemical solution processing unit 81 is, for example, a device that uses a chemical solution containing phosphoric acid as a processing solution to etch and remove the silicon nitride film through a recess formed on the surface of the substrate W. As shown in FIGS. 2 and 3, the first chemical solution processing unit 81 includes a processing tank 821 for performing the first chemical solution processing on the substrate W. As shown in FIG. The processing tank 821 has a box structure with an upper opening, and the box structure is composed of a rectangular bottom wall 821a in a plan view, and four side walls 821b to 821e rising from the periphery of the bottom wall 821a. Therefore, the processing tank 821 can store the processing liquid in the storage space 821f surrounded by the bottom wall 821a and the side walls 821b to 821e, while immersing the plurality of substrates W held by the elevator 810a at a time. In addition, the treatment tank 821 has an upper opening 821g that opens in the (+Z) direction, allowing the treatment liquid to overflow from the storage space 821f.

於處理槽821周圍設有溢流槽822,由該溢流槽822與處理槽821之側壁821b~821e形成有用以回收溢流之處理液之回收空間822a。又,以包圍處理槽821及溢流槽822之下方與側方之方式,設有外容器823。An overflow groove 822 is provided around the treatment tank 821, and the overflow groove 822 and the side walls 821b-821e of the treatment tank 821 form a recovery space 822a for recovering the overflowing treatment liquid. In addition, an outer container 823 is provided so as to surround the lower and lateral sides of the treatment tank 821 and the overflow tank 822.

於溢流槽822之回收空間822a之一部分,更具體而言,於側壁821d之(-X)方向側之空間,配置有流體配管系統839。流體配管系統839之入口連接於處理液供給部832,出口連接於處理液噴出口830之流體管831。因此,若根據來自控制部9之處理液供給指令,處理液供給部832進行動作,則將處理液經由流體配管系統839同時供給於複數根流體管831。其結果,自流體管831噴出處理液,並貯存於貯存空間821f。另,關於流體管831之詳細構成等,下文予以詳述。In a part of the recovery space 822a of the overflow tank 822, more specifically, in the space on the (-X) direction side of the side wall 821d, a fluid piping system 839 is arranged. The inlet of the fluid piping system 839 is connected to the processing liquid supply part 832, and the outlet is connected to the fluid pipe 831 of the processing liquid ejection port 830. Therefore, when the processing liquid supply unit 832 operates in accordance with the processing liquid supply command from the control unit 9, the processing liquid is simultaneously supplied to the plurality of fluid pipes 831 via the fluid piping system 839. As a result, the treatment liquid is ejected from the fluid pipe 831 and stored in the storage space 821f. In addition, the detailed structure of the fluid pipe 831 will be described in detail below.

又,將自處理槽821溢流之處理液回收至溢流槽822。於該溢流槽822連接有處理液回收部833。若根據來自控制部9之處理液回收指令,處理液回收部833進行動作,則回收至溢流槽822之處理液經由處理液回收部833送液至處理液供給部832供循環利用。如此,本實施形態中,可一面對處理槽821循環供給處理液,一面將處理液貯存於貯存空間821f。In addition, the treatment liquid overflowing from the treatment tank 821 is recovered to the overflow tank 822. A processing liquid recovery part 833 is connected to this overflow tank 822. If the processing liquid recovery unit 833 operates according to the processing liquid recovery command from the control unit 9, the processing liquid recovered to the overflow tank 822 is sent to the processing liquid supply unit 832 via the processing liquid recovery unit 833 for recycling. In this way, in this embodiment, the processing liquid can be circulated and supplied to the processing tank 821 while storing the processing liquid in the storage space 821f.

為一次保持複數塊基板W且使之浸漬於貯存有處理液之貯存空間821f,如圖2所示,設有升降機810a。該升降機810a構成為可於將複數塊基板W與基板搬送機構7(圖1)間進行交接之「交接位置」、與貯存空間821f間升降。升降機810a具備背板811、3根支持構件812、及延伸構件813。背板811沿處理槽821之側壁821b朝底壁821a延伸。支持構件812自背板811之下端部側面朝(-X)方向延伸。本實施形態中,設有3根支持構件812。各支持構件812中,複數個V字狀槽812a以一定間距配設於X方向。各槽812a係寬度較基板W之厚度略大之V字狀槽812a朝(+Z)方向開口而形成,可卡止基板W。因此,可藉由3根支持構件812以特定基板間距PT(圖5)一次保持由基板搬送機構7搬送來之複數塊基板W。又,延伸構件813自背板811之上端部背面朝(+X)方向延伸。升降機810a如圖2所示,全體呈L字狀。另,升降機810a之最上升位置設定為於即使基板搬送機構7為保持有複數塊基板W之狀態,亦可通過支持構件812之上方之高度。In order to hold a plurality of substrates W at a time and immerse them in the storage space 821f in which the processing liquid is stored, as shown in FIG. 2, a lifter 810a is provided. The elevator 810a is configured to be able to move up and down between the "transfer position" where a plurality of substrates W and the substrate transfer mechanism 7 (FIG. 1) are transferred, and the storage space 821f. The elevator 810a includes a back plate 811, three supporting members 812, and an extension member 813. The back plate 811 extends along the side wall 821b of the processing tank 821 toward the bottom wall 821a. The supporting member 812 extends in the (−X) direction from the side surface of the lower end of the back plate 811. In this embodiment, three supporting members 812 are provided. In each supporting member 812, a plurality of V-shaped grooves 812a are arranged in the X direction at a certain pitch. Each groove 812a is formed by opening the V-shaped groove 812a with a width slightly larger than the thickness of the substrate W in the (+Z) direction, so that the substrate W can be locked. Therefore, a plurality of substrates W conveyed by the substrate conveying mechanism 7 can be held at a time by the three supporting members 812 at a specific substrate pitch PT (FIG. 5 ). In addition, the extension member 813 extends in the (+X) direction from the back surface of the upper end portion of the back plate 811. As shown in Fig. 2, the elevator 810a has an L shape as a whole. In addition, the most ascending position of the elevator 810a is set to a height that can pass above the supporting member 812 even if the substrate transport mechanism 7 is in a state where a plurality of substrates W are held.

於處理槽821之(+X)方向側,設有升降機驅動機構814。升降機驅動機構814具備升降馬達815、滾珠螺桿816、升降基座817、升降支柱818、及馬達驅動部819。升降馬達815以縱置旋轉軸之狀態安裝於基板處理系統1之框架(省略圖示)。滾珠螺桿816連結於升降馬達815之旋轉軸。升降基座817之一側與滾珠螺桿816螺合。升降支柱818之基端部側安裝於升降基座817之中央部,另一端部側安裝於延伸構件813之下表面。若根據來自控制部9之上升指令,使馬達驅動部819驅動升降馬達815,則滾珠螺桿816旋轉,升降支柱818與升降基座817一起上升。藉此,將支持構件812定位於交接位置。又,若根據來自控制部9之下降指令,使馬達驅動部819朝反方向驅動升降馬達815,則滾珠螺桿816逆旋轉,升降支柱818與升降基座817一起下降。藉此,將保持於支持構件812之複數塊基板W一次浸漬於貯存在貯存空間821f之處理液。On the (+X) direction side of the processing tank 821, an elevator driving mechanism 814 is provided. The elevator driving mechanism 814 includes an elevating motor 815, a ball screw 816, an elevating base 817, an elevating pillar 818, and a motor driving unit 819. The lift motor 815 is mounted on the frame (not shown) of the substrate processing system 1 in a state where the rotating shaft is vertically arranged. The ball screw 816 is connected to the rotating shaft of the lifting motor 815. One side of the lifting base 817 is screwed with the ball screw 816. The base end side of the lifting pillar 818 is installed at the center of the lifting base 817, and the other end side is installed on the lower surface of the extension member 813. If the motor driving unit 819 drives the lifting motor 815 in accordance with the lifting command from the control unit 9, the ball screw 816 rotates, and the lifting pillar 818 rises together with the lifting base 817. Thereby, the supporting member 812 is positioned at the handover position. In addition, if the motor drive unit 819 drives the lifting motor 815 in the opposite direction according to the descending command from the control unit 9, the ball screw 816 rotates in the reverse direction, and the lifting column 818 is lowered together with the lifting base 817. Thereby, the plurality of substrates W held by the supporting member 812 are immersed in the processing liquid stored in the storage space 821f at a time.

貯存空間821f中,在保持於支持構件812之複數塊基板W之下方側,即(-Z)方向側,配設有處理液噴出部830與氣泡供給部840。處理液噴出部830係將自處理液供給部832經由流體配管系統839供給之處理液噴出至貯存空間821f者,氣泡供給部840係對貯存於貯存空間821f之處理液內供給氮氣之氣泡V(圖5)者,分別如下構成。In the storage space 821f, on the lower side of the plurality of substrates W held by the supporting member 812, that is, on the (-Z) direction side, a processing liquid ejection portion 830 and a bubble supply portion 840 are arranged. The processing liquid ejection unit 830 ejects the processing liquid supplied from the processing liquid supply unit 832 via the fluid piping system 839 to the storage space 821f, and the bubble supply unit 840 supplies the bubbles V( of nitrogen gas) to the processing liquid stored in the storage space 821f. Figure 5) has the following configurations.

處理液噴出部830如圖3及圖4所示,具有於X方向延伸設置之流體管831。本實施形態中,4根流體管831於Y方向互相離開配置。各流體管831之(-X)方向端部與流體配管系統839之出口連接,(+X)方向端部被封閉。又,複數個處理液噴出口834以依特定間隔排列於X方向之方式穿設於各流體管831之側壁。本實施形態中,如圖4所示,各處理液噴出口834朝(-Z)方向設置。因此,供給於流體管831之處理液在配管內部於(+X)方向流動,自各處理液噴出口834朝底壁821a,即貯存空間821f之內底面821h噴出。且,處理液如圖4中之實線箭頭所示,經由貯存空間821f之內底面821h朝上方流動,形成自處理槽821之底壁821a朝向上方開口821g即溢流面之處理液之流體F。如此,於基板W之下方側,形成處理液之上升流。另,為容易理解發明內容,將4根流體管831中配置於最靠(-Y)方向側者稱為「流體管831a」,將依序配置於(+Y)方向側者分別稱為「流體管831b」、「流體管831c」及「流體管831d」。又,於不區分其等之情形時,如上所述,簡稱為「流體管831」。As shown in FIGS. 3 and 4, the processing liquid ejection portion 830 has a fluid pipe 831 extending in the X direction. In this embodiment, the four fluid pipes 831 are arranged away from each other in the Y direction. The (-X) direction end of each fluid pipe 831 is connected to the outlet of the fluid piping system 839, and the (+X) direction end is closed. In addition, a plurality of processing liquid ejection ports 834 are arranged through the side walls of each fluid pipe 831 in such a manner that they are arranged in the X direction at specific intervals. In this embodiment, as shown in FIG. 4, each processing liquid ejection port 834 is provided in the (-Z) direction. Therefore, the processing liquid supplied to the fluid pipe 831 flows in the (+X) direction inside the pipe, and is ejected from each processing liquid ejection port 834 toward the bottom wall 821a, that is, the inner bottom surface 821h of the storage space 821f. 4, the treatment liquid flows upward through the inner bottom surface 821h of the storage space 821f, and forms the treatment liquid fluid F from the bottom wall 821a of the treatment tank 821 toward the upper opening 821g, which is the overflow surface. . In this way, on the lower side of the substrate W, an upward flow of the processing liquid is formed. In addition, in order to facilitate the understanding of the content of the invention, among the four fluid pipes 831 arranged on the most (-Y) direction side are referred to as "fluid pipes 831a", the ones arranged in order on the (+Y) direction side are referred to as "fluid pipes 831a", respectively. Fluid pipe 831b", "fluid pipe 831c" and "fluid pipe 831d". In addition, when they are not distinguished, they are simply referred to as "fluid pipe 831" as described above.

氣泡供給部840如圖3至圖5所示,具有複數根(本實施形態中為4根)起泡器841。各起泡器841具有於X方向延伸設置之泡狀物配管842、及自泡狀物配管842朝上方即(+Z)方向突設之複數個突設部位843。各泡狀物配管842之一端部與供給氮氣之氣體供給部844連接,另一端部被封閉。複數個突設部位843以與特定基板間距PT相同之間距PT設置於泡狀物配管842之上方側壁。各突設部位843如圖3所示,具有中空圓柱形狀,於上端面之中央部設有氣泡噴出口845。本實施形態中,藉由對以樹脂材料、尤其以選自由聚醚醚酮(PEEK,polyetheretherketone)、全氟烷氧基烷烴(PFA,perfluoroalkoxy alkane)、及聚四氟乙烯(PTFE,polytetrafluoroethylene)所組成之群之至少一者構成之長條樹脂管的表面,實施切削加工與穿設加工,而一體形成泡狀物配管842與複數個突設部位843。此處,當然亦可個別準備泡狀物配管842與複數個突設部位843,對泡狀物配管842安裝複數個突設部位843而使之一體化。As shown in FIGS. 3 to 5, the bubble supply unit 840 has a plurality of bubblers 841 (four in this embodiment). Each bubbler 841 has a bubble pipe 842 extending in the X direction, and a plurality of protruding portions 843 protruding upward from the bubble pipe 842 in the (+Z) direction. One end of each bubble pipe 842 is connected to a gas supply part 844 for supplying nitrogen gas, and the other end is closed. A plurality of protruding parts 843 are provided on the upper side wall of the bubble pipe 842 at the same pitch PT as the specific substrate pitch PT. As shown in FIG. 3, each protruding part 843 has a hollow cylindrical shape, and a bubble ejection port 845 is provided at the center of the upper end surface. In this embodiment, by using resin materials, especially selected from polyetheretherketone (PEEK, polyetheretherketone), perfluoroalkoxy alkane (PFA, perfluoroalkoxy alkane), and polytetrafluoroethylene (PTFE, polytetrafluoroethylene) The surface of the long resin tube constituted by at least one of the group is subjected to cutting processing and piercing processing to form a bubble piping 842 and a plurality of protruding parts 843 integrally. Here, of course, the bubble piping 842 and the plurality of protruding parts 843 may be separately prepared, and the plurality of protruding parts 843 may be attached to the bubble piping 842 to be integrated.

如此構成之氣泡供給部840中,若氣體供給部844根據來自控制部9之氣泡供給指令,將氮氣供給至氣泡供給部840,則於泡狀物配管842中流動之氮氣自氣泡噴出口845朝上方噴出。藉此,氮氣之氣泡V被供給至貯存在貯存空間821f之處理液,於鉛直方向Z上自高於處理液噴出口834之位置朝向溢流面之方向即(+Z)方向供給氣泡V。該等氣泡V於處理液中上升,促進將基板W表面之處理液置換成新鮮的處理液。另,作為氣體供給部844,例如可為自填充有氮氣之筒供給氮氣之構成,亦可使用設置有基板處理系統1之工廠中設置之公用設施。In the bubble supply unit 840 configured in this way, if the gas supply unit 844 supplies nitrogen gas to the bubble supply unit 840 in accordance with the bubble supply command from the control unit 9, the nitrogen gas flowing in the bubble pipe 842 flows toward the bubble ejection port 845 Squirting from above. Thereby, the bubbles V of nitrogen are supplied to the processing liquid stored in the storage space 821f, and the bubbles V are supplied in the vertical direction Z from a position higher than the processing liquid ejection port 834 toward the direction of the overflow surface, that is, the (+Z) direction. The bubbles V rise in the processing liquid, and promote the replacement of the processing liquid on the surface of the substrate W with fresh processing liquid. In addition, as the gas supply unit 844, for example, a configuration in which nitrogen gas is supplied from a cylinder filled with nitrogen gas may be used, and public facilities installed in a factory where the substrate processing system 1 is installed may also be used.

又,如圖4所示,4根起泡器841由3個起泡器板851自下方被支持,藉此固定配置於保持在升降機810a之基板W之下方側且處理液噴出口834之上方側。此處,為容易理解本發明,將4根起泡器841中配置於最靠(-Y)方向側者稱為「起泡器841a」,將依序配置於(+Y)方向側者分別稱為「起泡器841b」、「起泡器841c」及「起泡器841d」。又,不區分其等之情形時,如上所述,簡稱為「起泡器841」。另一方面,對於起泡器板851亦同樣,將起泡器板851中配置於最靠(-Y)方向側者稱為「起泡器板851a」,將依序配置於(+Y)方向側者分別稱為「起泡器板851b」及「起泡器板851c」。又,不區分其等之情形時,如上所述,簡稱為「起泡器板851」。In addition, as shown in FIG. 4, four bubblers 841 are supported from below by three bubbler plates 851, thereby being fixedly arranged on the lower side of the substrate W held by the elevator 810a and above the processing liquid ejection port 834 side. Here, in order to facilitate the understanding of the present invention, among the four bubblers 841 arranged on the most (-Y) direction side is referred to as "the bubbler 841a", the ones arranged in order on the (+Y) direction side are respectively It is called "bubbler 841b", "bubbler 841c" and "bubbler 841d". In addition, when the cases are not distinguished, they are simply referred to as "bubbler 841" as described above. On the other hand, the same applies to the bubbler plate 851, and the bubbler plate 851 that is arranged on the most (-Y) direction side is called "the bubbler plate 851a", and it will be arranged in order of (+Y) Those on the direction side are referred to as "a bubbler plate 851b" and "a bubbler plate 851c", respectively. In addition, when the cases are not distinguished, they are simply referred to as "bubbler plate 851" as described above.

起泡器板851a~851c皆具有於X方向延伸設置之板形狀。其中起泡器板851a如圖4所示,在鉛直方向Z上高於處理液噴出口834之位置,配置於流體管831a與流體管831b之間,且藉由固定構件(省略圖示)固定於處理槽821。且,起泡器841a以滿足以下之配置關係之方式固定於該起泡器板851a之上表面。其配置關係如圖5所示,即,安裝於起泡器841a之突設部位843朝向上方、及基板W與氣泡噴出口845交替位於X方向上。藉由如此配置,自氣泡噴出口845供給之氣泡V於X方向上朝相鄰之基板W間噴出氣泡V,執行有效之藥液處理。另,該配置關對於其他起泡器841b~841d亦同樣。The bubbler plates 851a to 851c all have a plate shape extending in the X direction. The bubbler plate 851a, as shown in FIG. 4, is located higher than the processing liquid ejection port 834 in the vertical direction Z, is arranged between the fluid pipe 831a and the fluid pipe 831b, and is fixed by a fixing member (not shown)于处理槽821。 In the processing tank 821. In addition, the bubbler 841a is fixed to the upper surface of the bubbler plate 851a in a manner that satisfies the following arrangement relationship. The arrangement relationship is as shown in FIG. 5, that is, the protruding portion 843 attached to the bubbler 841a faces upward, and the substrate W and the bubble ejection port 845 are alternately located in the X direction. With this configuration, the bubble V supplied from the bubble ejection port 845 ejects the bubble V between the adjacent substrates W in the X direction to perform effective chemical treatment. In addition, this configuration is the same for the other bubblers 841b to 841d.

起泡器板851b於鉛直方向Z上高於處理液噴出口834之位置,配置於流體管831b與流體管831c間,且藉由固定構件(省略圖示)固定於處理槽821。且,起泡器841b、841c於Y方向離開特定間隔且固定於該起泡器板851b之上表面。再者,起泡器板851c於鉛直方向Z上高於處理液噴出口834之位置,配置於流體管831c與流體管831d間,且藉由固定構件(省略圖示)固定於處理槽821。且,於該起泡器板851c之上表面固定有起泡器841d。如此,起泡器板851a~851c具有自下方支持氣泡供給部840之功能。The bubbler plate 851b is higher than the processing liquid ejection port 834 in the vertical direction Z, is disposed between the fluid pipe 831b and the fluid pipe 831c, and is fixed to the processing tank 821 by a fixing member (not shown). In addition, the bubblers 841b and 841c are separated by a specific interval in the Y direction and are fixed to the upper surface of the bubbler plate 851b. Furthermore, the bubbler plate 851c is higher than the processing liquid ejection port 834 in the vertical direction Z, is disposed between the fluid pipe 831c and the fluid pipe 831d, and is fixed to the processing tank 821 by a fixing member (not shown). In addition, a bubbler 841d is fixed on the upper surface of the bubbler plate 851c. In this way, the bubbler plates 851a to 851c have a function of supporting the bubble supply part 840 from below.

又,由於起泡器板851a~851c於鉛直方向Z上高於處理液噴出口834之位置,配置於流體管831a~831d間,故除上述支持功能外,亦具有限制經由貯存空間821f之內底面821h朝上方流動之處理液之流體F的功能。起泡器板851a~851c相互離開而形成作為處理液之流通路徑之貫通部位852a、852b。且,配置成流體管831b、831c之下端部進入於貫通部位852a、852b。又,於與流體管831b、831c相同之高度位置,將流體管831a配置於起泡器板851a之(-Y)方向側,且將流體管831d配置於起泡器板851a之(+Y)方向側。且,於起泡器板851a~851c及流體管831a~831d中彼此相鄰者之彼此之間,形成有間隙86。因此,處理液之上升流中朝向起泡器板851之下表面流動之處理液(以下稱為「分流對象液」)之流體F於該下表面受限制,而於水平面內分開。例如,於圖4之局部放大圖中,朝向起泡器板851c之下表面之分流對象液之流體F分流成朝起泡器板851c與流體管831c之間隙86流動之處理液之流體F5、及朝起泡器板851c與流體管831d之間隙86流動之處理液之流體F6。又,其他起泡器板851a、851b中,亦與起泡器板851c同樣,分流對象液之流體F受限制而分流成複數個處理液之流體F1~F4。In addition, since the bubbler plates 851a-851c are located higher than the processing liquid ejection port 834 in the vertical direction Z and are arranged between the fluid pipes 831a-831d, in addition to the above-mentioned support function, they also have a restriction to pass through the storage space 821f The bottom surface 821h functions as the fluid F of the treatment liquid flowing upward. The bubbler plates 851a to 851c are separated from each other to form penetrating parts 852a, 852b as a flow path of the processing liquid. In addition, the fluid pipes 831b and 831c are arranged so that the lower ends of the fluid pipes 831b and 831c enter the penetration portions 852a and 852b. In addition, at the same height position as the fluid pipes 831b and 831c, the fluid pipe 831a is arranged on the (-Y) direction side of the bubbler plate 851a, and the fluid pipe 831d is arranged on the (+Y) side of the bubbler plate 851a Direction side. In addition, a gap 86 is formed between the bubbler plates 851a to 851c and the fluid pipes 831a to 831d that are adjacent to each other. Therefore, the fluid F of the processing liquid flowing toward the lower surface of the bubbler plate 851 in the ascending flow of the processing liquid (hereinafter referred to as the "diversion target liquid") is restricted on the lower surface and separated in the horizontal plane. For example, in the partially enlarged view of FIG. 4, the fluid F of the diversion target liquid toward the lower surface of the bubbler plate 851c is divided into the fluid F5 of the treatment liquid flowing toward the gap 86 between the bubbler plate 851c and the fluid pipe 831c. And the fluid F6 of the treatment liquid flowing toward the gap 86 between the bubbler plate 851c and the fluid pipe 831d. In addition, in the other bubbler plates 851a and 851b, similarly to the bubbler plate 851c, the fluid F of the split target liquid is restricted and splits into a plurality of fluids F1 to F4 of the treatment liquid.

如此,本實施形態中,經由貯存空間821f之內底面821h朝上方移動之處理液之一部分(分流對象液)之流體F分流成複數個流體F1~F6,並朝向溢流面上升。如此,本實施形態中,起泡器板851a~851c將經由貯存空間821f之內底面821h朝上方流動之處理液之至少一部分作為分流對象液,將該分流對象液之流體F分流成複數個上升流,並引導至保持於升降機810a之基板W,作為分流部850(圖3)發揮功能。In this way, in the present embodiment, a part of the fluid F of the processing liquid (liquid to be split) that moves upward through the inner bottom surface 821h of the storage space 821f is split into a plurality of fluids F1 to F6 and rises toward the overflow surface. In this way, in the present embodiment, the bubbler plates 851a to 851c use at least a part of the processing liquid flowing upward through the inner bottom surface 821h of the storage space 821f as the split target liquid, and split the fluid F of the split target liquid into a plurality of risers It flows and is guided to the substrate W held by the elevator 810a, and functions as a shunt 850 (FIG. 3).

另,雖已參照圖2至圖5且針對相當於本發明之基板處理裝置之第1實施形態之第1藥液處理部81之構成進行說明,但第2藥液處理部83除處理液之種類為同種或不同種之點外,皆具有與第1藥液處理部81相同之構成,相當於本發明之基板處理裝置之第1實施形態。又,第1清洗處理部82及第2清洗處理部84除處理液為純水或DIW(deionized water:去離子水)等清洗液之點外,皆具有與第1藥液處理部81相同之構成,相當於本發明之基板處理裝置之第1實施形態。In addition, although the structure of the first chemical solution processing section 81 corresponding to the first embodiment of the substrate processing apparatus of the present invention has been described with reference to FIGS. Except for the same species or different species, they all have the same configuration as the first chemical solution processing section 81, which corresponds to the first embodiment of the substrate processing apparatus of the present invention. In addition, the first cleaning processing unit 82 and the second cleaning processing unit 84 have the same features as the first chemical liquid processing unit 81 except that the processing liquid is a cleaning liquid such as pure water or DIW (deionized water). The structure corresponds to the first embodiment of the substrate processing apparatus of the present invention.

如上所述,根據本實施形態,自處理液噴出口834朝向貯存空間821f之內底面821h噴出處理液,形成經由該內底面821h朝向溢流面之處理液之流體F。因此,與自基板W之下方側朝向上方或斜上方噴出處理液,或如日本專利特開2016-200821號公報所記載之裝置般,沿貯存空間之內底面噴出之先前技術相比,可抑制於貯存空間821f內,處理液之上升流偏離形成。且,關於鉛直方向Z上,在氣泡供給部840與貯存空間821f之內底面821h間,經由內底面821h朝上方流動之處理液之流體F之一部分,分流成複數個流體F1~F6後,將其引導至溢流面。因此,貯存於貯存空間821f之處理液內,於處理液內廣泛分散形成大量上升流之狀態下,處理液上升。因此,可有效抑制於貯存空間821f內產生下降流。其結果,可對基板W均一供給氣泡V,以高品質進行基板處理。As described above, according to this embodiment, the processing liquid is ejected from the processing liquid ejection port 834 toward the inner bottom surface 821h of the storage space 821f to form the processing liquid fluid F that passes through the inner bottom surface 821h toward the overflow surface. Therefore, compared with the prior art in which the processing liquid is sprayed upward or obliquely upward from the lower side of the substrate W, or sprayed along the inner bottom surface of the storage space like the device described in Japanese Patent Laid-Open No. 2016-200821, it is possible to suppress In the storage space 821f, the upward flow of the treatment liquid is deviated and formed. And, in the vertical direction Z, between the bubble supply part 840 and the inner bottom surface 821h of the storage space 821f, a part of the fluid F of the processing liquid flowing upward through the inner bottom surface 821h is divided into a plurality of fluids F1 to F6, and then the It is guided to the overflow surface. Therefore, in the processing liquid stored in the storage space 821f, the processing liquid rises in a state where the processing liquid is widely dispersed in a large amount of upward flow. Therefore, it is possible to effectively suppress the generation of downflow in the storage space 821f. As a result, the bubbles V can be uniformly supplied to the substrate W, and the substrate processing can be performed with high quality.

尤其,由於第1藥液處理部81經由高縱橫比之凹部對SiN膜進行濕蝕刻,故將本發明應用於第1藥液處理部81對於3D-NAND記憶體之製造較為重要。即,為提高濕蝕刻性能,需要於凹部之內部與外部間良好地進行處理液之置換。又,雖於凹部之底附近產生伴隨蝕刻反應之矽析出,但可藉由置換處理液而將上述矽自凹部排出。為穩定且持續體現該液體置換,需要增大凹部之內部與外部之濃度差,即濃度梯度,且遍及基板W之表面全體均一保持。進而言之,為滿足該等,重要之技術事項在於對基板W表面均一供給新鮮的處理液。對於該點,根據可對基板W均一供給氣泡V之第1藥液處理部81,可藉由氣泡V對處理液之均一供給而良好地進行SiN膜之濕蝕刻。In particular, since the first chemical treatment part 81 wet-etches the SiN film through the recessed part with a high aspect ratio, it is important to apply the present invention to the first chemical treatment part 81 for the manufacture of 3D-NAND memory. That is, in order to improve the wet etching performance, it is necessary to perform a good replacement of the treatment liquid between the inside and the outside of the recess. In addition, although silicon precipitation accompanying an etching reaction occurs near the bottom of the recess, the silicon can be discharged from the recess by replacing the treatment liquid. In order to perform the liquid replacement stably and continuously, it is necessary to increase the concentration difference between the inside and outside of the recess, that is, the concentration gradient, and to maintain uniformity over the entire surface of the substrate W. Furthermore, in order to meet these requirements, an important technical matter is to uniformly supply fresh processing liquid to the surface of the substrate W. In this regard, according to the first chemical solution processing section 81 that can uniformly supply the bubbles V to the substrate W, the wet etching of the SiN film can be performed satisfactorily by the uniform supply of the bubbles V to the processing liquid.

又,如圖4之局部放大圖所示,於彼此相鄰之流體管831c、831d間配置有起泡器板851c及起泡器841d。即,起泡器板851c及起泡器841d於鉛直方向Z上配置於流體管831c、831d之最頂部位與最低部位(處理液噴出口834)間。對於該點,於流體管831a、831b間及流體管831b、831c間亦同樣。如此,處理液噴出部830、氣泡供給部840及分流部850於鉛直方向Z上位於流體管831之外徑尺寸之範圍內,可不增加垂直方向Z上處理槽821之尺寸,而以高品質進行基板處理。Furthermore, as shown in the partially enlarged view of FIG. 4, a bubbler plate 851c and a bubbler 841d are arranged between the fluid pipes 831c and 831d adjacent to each other. That is, the bubbler plate 851c and the bubbler 841d are arranged in the vertical direction Z between the topmost position and the lowest position (processing liquid ejection port 834) of the fluid pipes 831c and 831d. This point is the same between the fluid pipes 831a and 831b and between the fluid pipes 831b and 831c. In this way, the processing liquid ejection portion 830, the bubble supply portion 840, and the branching portion 850 are located within the range of the outer diameter of the fluid pipe 831 in the vertical direction Z, and the processing tank 821 in the vertical direction Z can be processed with high quality without increasing the size of the processing tank 821 in the vertical direction Z. Substrate processing.

又,如圖4所示,貯存空間821f內,相對於通過保持於升降機810a之基板W之中心Wc,且與基板W之表面正交之假想鉛直面VS,對稱配置有處理液噴出部830、氣泡供給部840及分流部850。因此,貯存於貯存空間821f之處理液內產生之上升流亦成為假想鉛直面VS之對象,可抑制上升流之偏離,可有效抑制下降流之產生。In addition, as shown in FIG. 4, in the storage space 821f, with respect to a virtual vertical plane VS passing through the center Wc of the substrate W held by the elevator 810a and perpendicular to the surface of the substrate W, the processing liquid ejection portions 830, The bubble supply part 840 and the branching part 850. Therefore, the upward flow generated in the processing liquid stored in the storage space 821f also becomes the object of the imaginary vertical surface VS, and the deviation of the upward flow can be suppressed, and the generation of the downward flow can be effectively suppressed.

又,如圖5之局部放大圖所示,因在X方向上基板W與氣泡噴出口845以交替定位之方式配置於起泡器841d,故可朝彼此相鄰之基板W間有效供給氣泡V。其結果,可以高品質進行基板處理(藥液處理或清洗處理)。In addition, as shown in the partially enlarged view of FIG. 5, since the substrate W and the bubble ejection port 845 are alternately positioned in the bubbler 841d in the X direction, the bubble V can be efficiently supplied between the adjacent substrates W. . As a result, substrate processing (chemical solution processing or cleaning processing) can be performed with high quality.

又,使起泡器板851a~851c位於氣泡供給部840之鉛直正下方,而自下方支持氣泡供給部840。因此,可牢固地固定氣泡供給部840,可穩定地朝向彼此相鄰之基板W間供給氣泡V。In addition, the bubbler plates 851a to 851c are positioned vertically directly below the bubble supply part 840, and the bubble supply part 840 is supported from below. Therefore, the bubble supply part 840 can be firmly fixed, and the bubbles V can be stably supplied between the substrates W adjacent to each other.

再者,如圖3所示,貫通部位852a、852b設置於與氣泡噴出口845之排列方向X平行之方向。因此,通過貫通部位852a、852b朝上方流動之處理液流體與氣泡V流體之相對關係於X方向上固定,抑制氣泡V之供給方向散亂。其結果,可穩定地朝向彼此相鄰之基板W間供給氣泡V。Furthermore, as shown in FIG. 3, the penetration portions 852 a and 852 b are provided in a direction parallel to the arrangement direction X of the bubble ejection ports 845. Therefore, the relative relationship between the processing liquid fluid and the bubble V fluid flowing upward through the through portions 852a and 852b is fixed in the X direction, and the supply direction of the bubble V is suppressed from being scattered. As a result, the bubbles V can be stably supplied between the substrates W adjacent to each other.

如此,第1實施形態中,起泡器板851a~851c相當於本發明之「限制部位」之一例。又,於起泡器板851a~851c之下表面分開後朝間隙86流動之處理液相當於本發明之「經由上述限制部位流入之上述處理液」。又,X方向及Y方向分別相當於本發明之「第1水平方向」及「第2水平方向」。In this way, in the first embodiment, the bubbler plates 851a to 851c correspond to an example of the "restricted portion" of the present invention. In addition, the processing liquid flowing toward the gap 86 after being separated from the lower surfaces of the bubbler plates 851a to 851c corresponds to the "processing liquid flowing in through the restriction portion" of the present invention. In addition, the X direction and the Y direction correspond to the "first horizontal direction" and "second horizontal direction" of the present invention, respectively.

圖6係顯示本發明之基板處理裝置之第2實施形態之概略構成之局部剖視圖。該第2實施形態與第1實施形態較大之不同點係追加2塊起泡器板851、及追加2個起泡器841,其他構成與第1實施形態相同。因此,以下以不同點為中心進行說明,對於同一構成標註同一符號,省略說明。Fig. 6 is a partial cross-sectional view showing the schematic configuration of the second embodiment of the substrate processing apparatus of the present invention. The major difference between the second embodiment and the first embodiment is that two bubbler plates 851 and two bubblers 841 are added. The other configurations are the same as those of the first embodiment. Therefore, the following description will focus on the differences, and the same components will be denoted by the same reference numerals, and the description will be omitted.

第1實施形態中,如圖4所示,經由內底面821h流入至處理槽821之側壁821c與流體管831a間之處理液直接朝向溢流面上升,形成處理液之流體F。相對於此,第2實施形態中,於處理槽821之側壁821c與流體管831a間配置有起泡器板851(將其稱為「起泡器板851d」)。因此,上述處理液相當於分流對象液,該流體F於起泡器板851d之下表面受限制,於水平面內分開。其結果,分流對象液之流體F分流成朝側壁821c及起泡器板851d之間隙流動之處理液之流體F7、與朝起泡器板851c及流體管831a之間隙流動之處理液之流體F8。又,處理槽821之側壁821e側亦同樣,藉由於處理槽821之側壁821e與流體管831d間配置起泡器板851(將其稱為「起泡器板851e」),流入至其間之處理液相當於分流對象液,該流體F於起泡器板851e之下表面受限制,於水平面內分開。其結果,分流對象液之流體F分流成朝起泡器板851e及流體管831d之間隙流動之處理液之流體F9、與朝側壁821e及起泡器板851e之間隙流動之處理液之流體F10。In the first embodiment, as shown in FIG. 4, the treatment liquid flowing into the space between the side wall 821c of the treatment tank 821 and the fluid pipe 831a through the inner bottom surface 821h directly rises toward the overflow surface to form the treatment liquid fluid F. In contrast to this, in the second embodiment, a bubbler plate 851 (referred to as "a bubbler plate 851d") is arranged between the side wall 821c of the processing tank 821 and the fluid pipe 831a. Therefore, the above-mentioned treatment liquid corresponds to the liquid to be divided, and the fluid F is restricted on the lower surface of the bubbler plate 851d and separated in the horizontal plane. As a result, the fluid F of the split target fluid is split into a fluid F7 of the processing liquid flowing toward the gap between the side wall 821c and the bubbler plate 851d, and a fluid F8 of the processing liquid flowing toward the gap between the bubbler plate 851c and the fluid pipe 831a . Also, the side wall 821e side of the processing tank 821 is also the same. Since the bubbler plate 851 (referred to as "bubbler plate 851e") is arranged between the side wall 821e of the processing tank 821 and the fluid pipe 831d, the process flows in between. The liquid corresponds to the liquid to be split, and the liquid F is restricted on the lower surface of the bubbler plate 851e and separated in the horizontal plane. As a result, the fluid F of the split target fluid is split into a fluid F9 of the treatment liquid flowing toward the gap between the bubbler plate 851e and the fluid pipe 831d, and a fluid F10 of the treatment fluid flowing toward the gap between the side wall 821e and the bubbler plate 851e .

如此,根據第2實施形態,不僅如第1實施形態般,於貯存空間821f之中央部,廣泛分散形成大量上升流,於貯存空間821f之端部,亦廣泛分散形成大量上升流。即,對於經由內底面821h朝上方流動之全體處理液之流體F,分流成複數個後,將其引導至溢流面。因此,可進而有效抑制於貯存空間821f內產生下降流。其結果,可對基板W均一供給氣泡V,以更高品質進行基板處理。In this way, according to the second embodiment, not only as in the first embodiment, a large amount of upward flow is widely dispersed and formed at the center of the storage space 821f, and a large amount of upward flow is also widely dispersed and formed at the end of the storage space 821f. That is, the fluid F of the entire processing liquid flowing upward through the inner bottom surface 821h is divided into a plurality of fluids and then guided to the overflow surface. Therefore, it is possible to further effectively suppress the generation of downflow in the storage space 821f. As a result, the bubbles V can be uniformly supplied to the substrate W, and the substrate processing can be performed with higher quality.

又,第2實施形態中,由於在起泡器板851d、851e上追加設置有起泡器841,故可擴大氣泡V之供給範圍,以更高品質進行基板處理。Furthermore, in the second embodiment, since the bubbler 841 is additionally provided on the bubbler plates 851d and 851e, the supply range of the bubbles V can be expanded, and the substrate processing can be performed with higher quality.

圖7係顯示本發明之基板處理裝置之第3實施形態之概略構成之俯視圖,圖8係顯示本發明之基板處理裝置之第3實施形態之概略構成之剖視圖。該第3實施形態與第1實施形態較大之不同點係起泡器841及起泡器板851之個數,以及流體管831、起泡器841及起泡器板851之相對位置關係,其他構成與第1實施形態相同。因此,以下以不同點為中心進行說明,對於同一構成標註同一符號,省略說明。FIG. 7 is a plan view showing the schematic configuration of the third embodiment of the substrate processing apparatus of the present invention, and FIG. 8 is a cross-sectional view showing the schematic configuration of the third embodiment of the substrate processing apparatus of the present invention. The major difference between the third embodiment and the first embodiment is the number of bubblers 841 and bubbler plates 851, and the relative positional relationship between the fluid pipe 831, bubbler 841, and bubbler plate 851. The other structure is the same as that of the first embodiment. Therefore, the following description will focus on the differences, and the same components will be denoted by the same reference numerals, and the description will be omitted.

第3實施形態中,於貯存空間821f之內底面821h之正上方位置,以於X方向互相離開之狀態配置有4根流體管831。各流體管831於Y方向延伸設置,以處理液噴出口834朝向內底面821h之姿勢配置。又,於流體管831之正上方位置,以於Y方向互相離開之狀態配置有複數根(第3實施形態中為8根)起泡器板851。各起泡器板851於X方向延伸設置。因此,流體管831與起泡器板851互相正交,於自上方俯視時形成點陣構造。因此,自流體管831之處理液噴出口834噴出之處理液經由內底面821h通過相鄰之流體管831間朝上方流動。該處理液之一部分(分流對象液)於起泡器板851之下表面受限制,於水平面內分開,於俯視時通過流體管831及起泡器板851皆不存在之貫通部位852,朝向溢流面上升。如此,與第1實施形態或第2實施形態同樣,分流對象液之流體由起泡器板851分流成複數個。其結果,可獲得與第1實施形態或第2實施形態同樣之作用效果。In the third embodiment, four fluid pipes 831 are arranged at a position directly above the inner bottom surface 821h of the storage space 821f in a state of being separated from each other in the X direction. Each fluid pipe 831 extends in the Y direction, and is arranged with the processing liquid ejection port 834 facing the inner bottom surface 821h. In addition, a plurality of bubbler plates 851 (eight in the third embodiment) are arranged at a position directly above the fluid pipe 831 in a state of being separated from each other in the Y direction. Each bubbler plate 851 extends in the X direction. Therefore, the fluid pipe 831 and the bubbler plate 851 are orthogonal to each other, and form a lattice structure when viewed from above. Therefore, the processing liquid ejected from the processing liquid ejection port 834 of the fluid pipe 831 flows upward through the space between the adjacent fluid pipes 831 via the inner bottom surface 821h. A part of the treatment liquid (the liquid to be shunted) is restricted on the lower surface of the bubbler plate 851, separated in the horizontal plane, and when viewed from above, it passes through the through part 852 where neither the fluid pipe 831 nor the bubbler plate 851 exists, and faces the overflow. The stream surface rises. In this manner, as in the first embodiment or the second embodiment, the fluid of the split target liquid is split by the bubbler plate 851 into plural pieces. As a result, the same effects as those of the first embodiment or the second embodiment can be obtained.

又,於各起泡器板851上固定有起泡器841,但起泡器841之氣泡噴出口845與基板W之配置關與第1實施形態或第2實施形態同樣,可朝向彼此相鄰之基板W間有效供給氣泡V。其結果,可以高品質進行基板處理(藥液處理或清洗處理)。Also, a bubbler 841 is fixed to each bubbler plate 851, but the arrangement of the bubble ejection port 845 of the bubbler 841 and the substrate W is the same as that of the first embodiment or the second embodiment, and they can face each other adjacent to each other. The bubbles V are effectively supplied between the substrates W. As a result, substrate processing (chemical solution processing or cleaning processing) can be performed with high quality.

然而,第1實施形態及第2實施形態中,將構成分流部850之起泡器板851配置於鄰接之流體管831間,但亦可與第3實施形態同樣,於流體管831之正上方位置配置起泡器板851,進而於該起泡器板851上配置起泡器841(第4實施形態)。However, in the first embodiment and the second embodiment, the bubbler plate 851 constituting the branch portion 850 is arranged between the adjacent fluid pipes 831, but it can also be placed directly above the fluid pipe 831 as in the third embodiment. The bubbler plate 851 is arranged at the position, and the bubbler 841 is further arranged on the bubbler plate 851 (fourth embodiment).

又,第1實施形態至第4實施形態中,使獨立之3塊起泡器板851互相隔開且排列於Y方向而構成分流部850,但分流部850之構成並非限定於此者,例如亦可如圖9所示般構成(第5實施形態)。In addition, in the first to fourth embodiments, three independent bubbler plates 851 are spaced apart from each other and arranged in the Y direction to form the splitter 850, but the configuration of the splitter 850 is not limited to this, for example It may be configured as shown in Fig. 9 (fifth embodiment).

圖9係模式性顯示本發明之基板處理裝置之第5實施形態中使用之分流部之構成的圖。該第5實施形態中,亦使用對1塊板構件853於Y方向離開設有於X方向延伸之狹縫854者作為分流部850。該第5實施形態中,狹縫854作為貫通部位852發揮功能,且藉由狹縫854分離之各帶狀區域855作為起泡器板851發揮功能,可獲得與上述實施形態同樣之作用效果。Fig. 9 is a diagram schematically showing the structure of a shunt used in the fifth embodiment of the substrate processing apparatus of the present invention. In this fifth embodiment, a slit 854 extending in the X direction from one plate member 853 in the Y direction is used as the branch portion 850. In this fifth embodiment, the slit 854 functions as the penetration portion 852, and the strip-shaped regions 855 separated by the slit 854 function as the bubbler plate 851, and the same effects as in the above-mentioned embodiment can be obtained.

又,第3實施形態及第4實施形態中,於流體管831之正上方位置,使獨立之複數個起泡器板851互相離開且排列於Y方向而構成分流部850,但例如亦可如圖10所示般構成(第6實施形態)。In addition, in the third and fourth embodiments, in the position directly above the fluid pipe 831, a plurality of independent bubbler plates 851 are separated from each other and arranged in the Y direction to form the branch portion 850, but for example, it may be as The general configuration shown in Fig. 10 (sixth embodiment).

圖10係模式性顯示本發明之基板處理裝置之第6實施形態中使用之分流部之構成的圖。該第6實施形態中,取代對板構件853設置狹縫854,而如同圖所示,於板構件853穿設複數個貫通孔856。即,第6實施形態中,貫通孔群實質作為貫通部位852發揮功能,且由該等貫通孔群分離之各帶狀區域855作為起泡器板851發揮功能,可獲得與上述實施形態同樣之作用效果。Fig. 10 is a diagram schematically showing the structure of a shunt used in the sixth embodiment of the substrate processing apparatus of the present invention. In this sixth embodiment, instead of providing slits 854 in the plate member 853, as shown in the figure, a plurality of through holes 856 are bored in the plate member 853. That is, in the sixth embodiment, the through-hole group essentially functions as the through portion 852, and the band-shaped regions 855 separated by the through-hole groups function as the bubbler plate 851, and the same as the above-mentioned embodiment can be obtained. Effect.

又,上述實施形態中,藉由分流部850之起泡器板851支持起泡器841,並將其在貯存於貯存空間821f之處理液內固定配置,且藉由該起泡器板851將經由內底面821h朝上方流動之處理液之流體F分流成複數根流體。此處,例如將起泡器板851直接固定於處理槽821之情形時,例如如圖11所示,亦可於流體管831間配置起泡器841(第7實施形態)。In addition, in the above-mentioned embodiment, the bubbler 841 is supported by the bubbler plate 851 of the branch portion 850, and is fixedly arranged in the processing liquid stored in the storage space 821f, and the bubbler plate 851 The fluid F of the processing liquid flowing upward through the inner bottom surface 821h is divided into a plurality of fluids. Here, for example, when the bubbler plate 851 is directly fixed to the treatment tank 821, as shown in FIG. 11, for example, a bubbler 841 may be arranged between the fluid pipes 831 (seventh embodiment).

圖11係顯示本發明之基板處理裝置之第7實施形態之概略構成之剖視圖。該第7實施形態中,如同圖所示,自流體管831之處理液噴出口834噴出之處理液經由內底面821h通過相鄰之流體管831間朝上方流動。該處理液之一部分(分流對象液)於起泡器841之泡狀物配管842之下表面受限制,於水平面內分開,朝向溢流面上升。如此,分流對象液之流體藉由起泡器841被分流成複數個。其結果,可獲得與第1實施形態或第2實施形態同樣之作用效果。又,可將裝置簡化省略分流部850之部分。Fig. 11 is a cross-sectional view showing a schematic configuration of a seventh embodiment of the substrate processing apparatus of the present invention. In the seventh embodiment, as shown in the figure, the processing liquid ejected from the processing liquid ejection port 834 of the fluid pipe 831 flows upward through the inner bottom surface 821h through the adjacent fluid pipes 831. A part of the treatment liquid (the liquid to be diverted) is restricted on the lower surface of the bubble pipe 842 of the bubbler 841, divided in the horizontal plane, and rises toward the overflow surface. In this way, the fluid of the split target liquid is split into a plurality of fluids by the bubbler 841. As a result, the same effects as those of the first embodiment or the second embodiment can be obtained. In addition, the device can be simplified to omit the part of the splitter 850.

又,上述實施形態中,將經由內底面821h朝上方流動之處理液之一部分或全部作為分流對象液,將分流對象液之流體進行分流,抑制下降流之產生。此外,亦可追加其他用以抑制下降流產生之構成。例如如圖12所示,亦可於處理槽821設置側壁開口821h~821k(第8實施形態)。Furthermore, in the above-mentioned embodiment, part or all of the processing liquid flowing upward through the inner bottom surface 821h is used as the diversion target liquid, and the flow of the diversion target liquid is divided to suppress the generation of downflow. In addition, other configurations for suppressing the generation of downflow can also be added. For example, as shown in FIG. 12, side wall openings 821h to 821k may be provided in the processing tank 821 (eighth embodiment).

圖12係顯示本發明之基板處理裝置之第8實施形態中使用之處理槽之構成的圖。第8實施形態與第1實施形態(圖3)較大之不同點在於,在處理槽821之所有側壁821b~821e中,於與被浸漬於處理液之基板W對向之基板對向區域設有側壁開口821h~821k之點,其他構成與第1實施形態相同。因此,以下以不同點為中心進行說明,對於同一構成標註同一符號,省略說明。Fig. 12 is a diagram showing the structure of a processing tank used in the eighth embodiment of the substrate processing apparatus of the present invention. The eighth embodiment differs greatly from the first embodiment (FIG. 3) in that all the side walls 821b to 821e of the processing tank 821 are provided in the substrate facing area facing the substrate W immersed in the processing liquid. There are points with side wall openings 821h to 821k, and the other structure is the same as that of the first embodiment. Therefore, the following description will focus on the differences, and the same components will be denoted by the same reference numerals, and the description will be omitted.

第8實施形態中,藉由側壁開口821h~821k將貯存空間821f與回收空間822a連通。因此,朝向上方開口821g流動之處理液分流成經由上方開口821g溢流而自處理槽821排出至回收空間822a者、及經由側壁開口821h~821k自處理槽821排出至回收空間822a者。如此,可藉由在靠近溢流面之位置處將處理液分流而更有效抑制下降流,對基板W更均一地供給氣泡V。其結果,可以更高品質進行基板處理。In the eighth embodiment, the storage space 821f and the recovery space 822a communicate with each other through the side wall openings 821h to 821k. Therefore, the processing liquid flowing toward the upper opening 821g is divided into the one that overflows through the upper opening 821g and is discharged from the processing tank 821 to the recovery space 822a, and the one that is discharged from the processing tank 821 to the recovery space 822a through the side wall openings 821h to 821k. In this way, by dividing the processing liquid at a position close to the overflow surface, the downward flow can be more effectively suppressed, and the bubbles V can be supplied to the substrate W more uniformly. As a result, substrate processing can be performed with higher quality.

又,為進而抑制下降流產生,亦可對上述實施形態附加日本專利特開平11-102888號公報所記載之技術,即追加限制上方開口821g之面積之罩而抑制下降流之技術。Furthermore, in order to further suppress the generation of downflow, the technique described in Japanese Patent Laid-Open No. 11-102888, that is, a cover that restricts the area of the upper opening 821g, can be added to the above-mentioned embodiment to suppress downflow.

另,本發明並非限定於上述之實施形態者,只要不脫離其主旨,則除上述者外,可進行各種變更。例如,上述實施形態中,使用自泡狀物配管842設有中空圓柱狀之突設部位843之起泡器841供給氣泡V,但起泡器841之構成並非限定於此者。例如亦可如圖13所示,使用自泡狀物配管842突設有中空圓錐梯形形狀之突設部位846者(第9實施形態)。又,例如亦可如圖14所示,使用未設置突設部位者,即於泡狀物配管842之上表面穿設有氣泡噴出口845者(第10實施形態)。In addition, the present invention is not limited to the above-mentioned embodiments, and various changes can be made in addition to the above as long as it does not deviate from the gist. For example, in the above embodiment, the bubbler 841 provided with the hollow cylindrical protrusion 843 from the bubble pipe 842 is used to supply the bubbles V, but the structure of the bubbler 841 is not limited to this. For example, as shown in FIG. 13, it is also possible to use a hollow cone trapezoid-shaped protrusion part 846 protruding from the bubble pipe 842 (ninth embodiment). Moreover, for example, as shown in FIG. 14, the one which does not provide the protruding part, ie, the one with the bubble ejection port 845 penetrated in the upper surface of the bubble pipe 842 (10th embodiment), can also be used.

又,上述實施形態中,處理液噴出部830包含4根流體管831,但流體管831之根數並非限定於此者,期望根據貯存空間821f或基板W之尺寸等而設定。又,氣泡供給部840所含之起泡器841之根數為4根(第1實施形態、第7實施形態等)、6根(第2實施形態)、8根(第3實施形態),但起泡器841之根數並非限定於此者,期望根據貯存空間821f或基板W之尺寸等而設定。又,分流部850所含之起泡器板851之塊數為3塊(第1實施形態、第7實施形態等)、5塊(第2實施形態)、8塊(第3實施形態),但起泡器841之根數並非限定於此者,期望根據貯存空間821f或基板W之尺寸等設定。In addition, in the above-described embodiment, the processing liquid ejection portion 830 includes four fluid pipes 831, but the number of fluid pipes 831 is not limited to this, and it is desirable to set it according to the size of the storage space 821f or the substrate W. In addition, the number of bubblers 841 included in the bubble supply unit 840 is 4 (first embodiment, seventh embodiment, etc.), 6 (second embodiment), and 8 (third embodiment). However, the number of bubblers 841 is not limited to this, and it is desirable to set it according to the size of the storage space 821f or the substrate W. In addition, the number of bubbler plates 851 included in the splitter 850 is 3 (first embodiment, seventh embodiment, etc.), 5 (second embodiment), and 8 (third embodiment). However, the number of bubblers 841 is not limited to this, and it is desirable to set it according to the storage space 821f or the size of the substrate W.

又,上述實施形態中,例如如圖4等所示,處理液噴出口834朝向貯存空間821f之內底面821h開口,將處理液噴出至內底面821h。此處,使處理液流通於內底面821h之方法並非限定於此者(例如第11實施形態或第12實施形態)。Moreover, in the above-mentioned embodiment, as shown in FIG. 4 etc., for example, the processing liquid ejection port 834 opens toward the inner bottom surface 821h of the storage space 821f, and the processing liquid is ejected to the inner bottom surface 821h. Here, the method of passing the processing liquid on the inner bottom surface 821h is not limited to this (for example, the 11th embodiment or the 12th embodiment).

圖15係局部顯示本發明之基板處理裝置之第11實施形態之主要構成之分解組裝立體圖。圖16係第11實施形態之基板處理裝置之局部剖視圖。該第11實施形態與第1實施形態(圖4)較大之不同點在於,流體管831之根數及配置、追加罩構件835、以及對作為貫通部位852發揮功能之狹縫857追加起泡器板851,其他構成基本與第1實施形態相同。因此,以下以不同點為中心進行說明,對於同一構成標註同一符號,省略說明。Fig. 15 is an exploded and assembled perspective view partially showing the main components of the eleventh embodiment of the substrate processing apparatus of the present invention. Fig. 16 is a partial cross-sectional view of the substrate processing apparatus of the eleventh embodiment. The eleventh embodiment differs greatly from the first embodiment (FIG. 4) in the number and arrangement of fluid pipes 831, the additional cover member 835, and the addition of blistering to the slit 857 that functions as a through part 852 The other structure of the device board 851 is basically the same as that of the first embodiment. Therefore, the following description will focus on the differences, and the same components will be denoted by the same reference numerals, and the description will be omitted.

第11實施形態中,流體管831與先前裝置同樣地配置。即,流體管831之處理液噴出口834朝向保持於省略圖示之升降機(基板保持部)之基板W之下方端部開口。因此,若處理液供給部832根據來自控制部9之處理液供給指令進行動作,則將處理液如圖16之放大圖中之箭頭AR1所示,自流體管831朝向基板W噴出。惟,本實施形態中,以自上方覆蓋流體管831之方式配置罩構件835,如同圖中之箭頭AR2所示,將上述處理液向貯存空間821f之內底面821h引導。藉此,與第1實施形態至第10實施形態同樣,處理液經由內底面821h朝上方流動。即,形成分流對象液。分流對象液之一部分於起泡器板851之下表面受限制,於水平面內被分開。且,經分開之處理液通過起泡器板851之狹縫857(貫通部位852),朝向溢流面上升。如此,與上述實施形態同樣地,分流對象液之流體藉由起泡器板851被分流成複數個。其結果,可有效抑制於貯存空間821f內產生下降流,而以高品質進行基板處理。In the eleventh embodiment, the fluid pipe 831 is arranged in the same manner as the previous device. That is, the processing liquid ejection port 834 of the fluid pipe 831 opens toward the lower end of the substrate W held by the elevator (substrate holding portion) not shown in the figure. Therefore, when the processing liquid supply unit 832 operates in accordance with the processing liquid supply command from the control unit 9, the processing liquid is ejected from the fluid pipe 831 toward the substrate W as shown by the arrow AR1 in the enlarged view of FIG. However, in this embodiment, the cover member 835 is arranged to cover the fluid pipe 831 from above, and as indicated by the arrow AR2 in the figure, the processing liquid is guided to the inner bottom surface 821h of the storage space 821f. Thereby, similarly to the first embodiment to the tenth embodiment, the processing liquid flows upward through the inner bottom surface 821h. That is, the liquid to be split is formed. A part of the liquid to be diverted is restricted on the lower surface of the bubbler plate 851 and divided in a horizontal plane. In addition, the separated treatment liquid passes through the slit 857 (the penetrating part 852) of the bubbler plate 851 and rises toward the overflow surface. In this way, as in the above-mentioned embodiment, the fluid of the split target liquid is split into a plurality of pieces by the bubbler plate 851. As a result, the generation of downflow in the storage space 821f can be effectively suppressed, and the substrate processing can be performed with high quality.

上述第11實施形態中,藉由設置罩構件835而有罩構件835正上方之處理液流體變少之傾向。因此,如圖17所示,亦可構成為於罩構件835之一部分設置貫通孔836,於罩構件835之正上方亦送入處理液之一部分(第12實施形態)。In the above-mentioned eleventh embodiment, by providing the cover member 835, there is a tendency that the processing liquid immediately above the cover member 835 becomes less. Therefore, as shown in FIG. 17, the through hole 836 may be provided in a part of the cover member 835, and a part of the processing liquid may also be fed directly above the cover member 835 (12th embodiment).

圖17係本發明之基板處理裝置之第12實施形態之局部剖視圖。該第12實施形態中,將貫通孔836設置於罩構件835中不與處理液噴出口834對向之位置。因此,自處理液噴出口834噴出之處理液沿罩構件835之彎曲下表面流動,其之一部分通過貫通孔836,自罩構件835朝向基板W之下方端部流通(參照該圖之箭頭F0)。另一方面,除此以外之處理液與第11實施形態同樣,成為分流對象液,一部分於起泡器板851之下表面受限制,於水平面內分開。藉由如此於罩構件835之正上方區域追加處理液之流體F0,可進而有效抑制於貯存空間821f內產生下降流。其結果,可提高對基板W供給氣泡V之均一性,以更高品質進行基板處理。Fig. 17 is a partial cross-sectional view of a twelfth embodiment of the substrate processing apparatus of the present invention. In this twelfth embodiment, the through hole 836 is provided at a position in the cover member 835 that does not face the processing liquid ejection port 834. Therefore, the processing liquid ejected from the processing liquid ejection port 834 flows along the curved lower surface of the cover member 835, and a part of it flows through the through hole 836 from the cover member 835 toward the lower end of the substrate W (refer to the arrow F0 in the figure) . On the other hand, the treatment liquid other than this is the same as the eleventh embodiment, and becomes the flow target liquid, and a part is restricted on the lower surface of the bubbler plate 851, and is divided in the horizontal plane. By adding the fluid F0 of the processing liquid to the area directly above the cover member 835 in this way, it is possible to further effectively suppress the generation of downflow in the storage space 821f. As a result, the uniformity of the supply of bubbles V to the substrate W can be improved, and the substrate processing can be performed with higher quality.

又,上述實施形態中,將氮氣送入至起泡器841,且將氣泡V供給於處理液內,但亦可使用氮氣以外之氣體作為本發明之「氣體」。In addition, in the above-mentioned embodiment, nitrogen is fed to the bubbler 841 and the bubbles V are fed into the processing liquid, but a gas other than nitrogen may be used as the "gas" of the present invention.

再者,上述實施形態中,將本發明應用於藉由包含磷酸之藥液進行藥液處理之基板處理裝置或進行清洗處理之基板處理裝置,但本發明之應用範圍並非限定於此者,亦可將本發明應用於使基板浸漬於上述藥液或清洗液以外之處理液中而進行基板處理之所有基板處理技術。Furthermore, in the above-mentioned embodiments, the present invention is applied to a substrate processing apparatus for chemical liquid treatment or a substrate processing apparatus for cleaning by a chemical liquid containing phosphoric acid, but the scope of application of the present invention is not limited to this. The present invention can be applied to all substrate processing techniques in which the substrate is immersed in a processing liquid other than the above-mentioned chemical liquid or cleaning liquid to perform substrate processing.

以上,已依照特定實施例說明發明,但該說明未意欲以限定性意義而解釋者。若參照發明之說明,則精通該技術者應明瞭與本發明之其他實施形態同樣揭示之實施形態之各種變化例。因此應認為,隨附之申請專利範圍於不脫離發明之真實範圍內,為包含該變化例或實施形態者。Above, the invention has been described in accordance with specific embodiments, but the description is not intended to be interpreted in a limited sense. If referring to the description of the invention, those skilled in the technology should understand the various modifications of the embodiments disclosed in the same manner as the other embodiments of the present invention. Therefore, it should be considered that the scope of the attached patent application does not deviate from the true scope of the invention, and includes the modification or embodiment.

本發明可應用於一面使處理液自處理槽溢流一面將基板浸漬於貯存在處理槽之處理液,且於處理液中,對上述基板供給氣泡進行處理的所有基板處理技術。The present invention can be applied to all substrate processing techniques in which the substrate is immersed in the processing liquid stored in the processing tank while the processing liquid is overflowed from the processing tank, and bubbles are supplied to the substrate for processing in the processing liquid.

1:基板處理系統 2:收納器載置部 3:擋板驅動機構 4:基板移載機器人 5:姿勢轉換機構 6:推桿 7:基板搬送機構 8:處理單元 9:控制部 31:擋板 71:懸垂臂 81:第1藥液處理部(基板處理裝置) 82:第1清洗處理部(基板處理裝置) 83:第2藥液處理部(基板處理裝置) 84:第2清洗處理部(基板處理裝置) 85:處理部 86:間隙 810:升降機(基板保持部) 810a:升降機(基板保持部) 810b:升降機(基板保持部) 811:背板 812:支持構件 812a:V字狀槽 813:延伸構件 814:升降機驅動機構 815:升降馬達 816:滾珠螺桿 817:升降基座 818:升降支柱 819:馬達驅動部 821:處理槽 821a:(處理槽之)底壁 821b~821e:(處理槽之)側壁 821f:貯存空間 821g:上方開口 821h:(貯存空間之)內底面 821h~821k:側壁開口 822:溢流槽 822a:回收空間 823:外容器 830:處理液噴出部 831:流體管 831a~831d:流體管 832:處理液供給部 833:處理液回收部 834:處理液噴出口 835:罩構件 836:貫通孔 839:流體配管系統 840:氣泡供給部 841:起泡器 841a~841d:起泡器 842:泡狀物配管 843:突設部位 844:氣體供給部 845:氣泡噴出口 846:突設部位 850:分流部 851:起泡器 851a~851e:起泡器 852:貫通部位 852a:貫通部位 852b:貫通部位 853:板構件 854:狹縫 855:帶狀區域 856:貫通孔 857:狹縫 AR1:箭頭 AR2:箭頭 F:環帶 F:流體 F0:箭頭 F1~F10:流體 PT:間距 V:氣泡 VS:假想鉛直面 W:基板 Wc:(基板之)中心 X:第1水平方向 Y:第2水平方向 Z:鉛直方向1: Substrate processing system 2: Storage device placement part 3: Baffle drive mechanism 4: Substrate transfer robot 5: Posture conversion mechanism 6: putter 7: Substrate transport mechanism 8: Processing unit 9: Control Department 31: bezel 71: Overhanging arm 81: The first chemical processing section (substrate processing equipment) 82: The first cleaning processing section (substrate processing equipment) 83: The second chemical processing section (substrate processing equipment) 84: The second cleaning processing section (substrate processing equipment) 85: Processing Department 86: Gap 810: Elevator (board holding part) 810a: Elevator (board holding part) 810b: Lift (board holding part) 811: Backplane 812: support member 812a: V-shaped groove 813: Extension member 814: Elevator Drive Mechanism 815: Lifting motor 816: Ball Screw 817: Lifting base 818: Lifting pillar 819: Motor Drive 821: processing slot 821a: (processing tank) bottom wall 821b~821e: (of the processing tank) side wall 821f: storage space 821g: upper opening 821h: (of storage space) inner bottom surface 821h~821k: side wall opening 822: Overflow Slot 822a: Reclaim space 823: Outer Container 830: Treatment liquid ejection part 831: fluid pipe 831a~831d: fluid pipe 832: Treatment liquid supply unit 833: Treatment Liquid Recovery Department 834: Treatment Liquid Ejection Port 835: cover member 836: through hole 839: Fluid Piping System 840: Bubble Supply Department 841: Bubbler 841a~841d: Bubbler 842: Bulb piping 843: protruding part 844: Gas Supply Department 845: Bubble Ejection 846: Protruding Location 850: Diversion Department 851: Bubbler 851a~851e: Bubbler 852: pierced part 852a: penetration part 852b: Through part 853: plate member 854: slit 855: band area 856: Through Hole 857: slit AR1: Arrow AR2: Arrow F: Annular belt F: fluid F0: Arrow F1~F10: fluid PT: pitch V: bubbles VS: imaginary face upright W: substrate Wc: (of the substrate) center X: 1st horizontal direction Y: 2nd horizontal direction Z: Vertical direction

圖1係顯示裝備本發明之基板處理裝置之第1實施形態之基板處理系統之概略構成之俯視圖。 圖2係顯示本發明之基板處理裝置之第1實施形態之概略構成之模式圖。 圖3係模式性顯示圖2所示之基板處理裝置之主要構成之分解組裝立體圖。 圖4係圖2之局部剖視圖。 圖5係顯示保持於升降機之複數塊基板與氣泡噴出口之配置關係之模式圖。 圖6係顯示本發明之基板處理裝置之第2實施形態之概略構成之局部剖視圖。 圖7係顯示本發明之基板處理裝置之第3實施形態之概略構成之俯視圖。 圖8係顯示本發明之基板處理裝置之第3實施形態之概略構成之剖視圖。 圖9係模式性顯示本發明之基板處理裝置之第5實施形態中使用之分流部之構成的圖。 圖10係模式性顯示本發明之基板處理裝置之第6實施形態中使用之分流部之構成的圖。 圖11係顯示本發明之基板處理裝置之第7實施形態之概略構成之剖視圖。 圖12係顯示本發明之基板處理裝置之第8實施形態中使用之處理槽之構成的圖。 圖13係模式性顯示本發明之基板處理裝置之第9實施形態中使用之起泡器之構成之圖。 圖14係模式性顯示本發明之基板處理裝置之第10實施形態中使用之起泡器之構成之圖。 圖15係局部顯示本發明之基板處理裝置之第11實施形態之主要構成之分解組裝立體圖。 圖16係第11實施形態之基板處理裝置之局部剖視圖。 圖17係本發明之基板處理裝置之第12實施形態之局部剖視圖。Fig. 1 is a plan view showing a schematic configuration of a substrate processing system equipped with a first embodiment of the substrate processing apparatus of the present invention. Fig. 2 is a schematic diagram showing a schematic configuration of the first embodiment of the substrate processing apparatus of the present invention. FIG. 3 is an exploded and assembled perspective view schematically showing the main components of the substrate processing apparatus shown in FIG. 2. Fig. 4 is a partial cross-sectional view of Fig. 2. Fig. 5 is a schematic diagram showing the arrangement relationship between a plurality of substrates held in the elevator and the bubble ejection port. Fig. 6 is a partial cross-sectional view showing the schematic configuration of the second embodiment of the substrate processing apparatus of the present invention. Fig. 7 is a plan view showing a schematic configuration of a third embodiment of the substrate processing apparatus of the present invention. Fig. 8 is a cross-sectional view showing a schematic configuration of a third embodiment of the substrate processing apparatus of the present invention. Fig. 9 is a diagram schematically showing the structure of a shunt used in the fifth embodiment of the substrate processing apparatus of the present invention. Fig. 10 is a diagram schematically showing the structure of a shunt used in the sixth embodiment of the substrate processing apparatus of the present invention. Fig. 11 is a cross-sectional view showing a schematic configuration of a seventh embodiment of the substrate processing apparatus of the present invention. Fig. 12 is a diagram showing the structure of a processing tank used in the eighth embodiment of the substrate processing apparatus of the present invention. Fig. 13 is a diagram schematically showing the structure of a bubbler used in the ninth embodiment of the substrate processing apparatus of the present invention. Fig. 14 is a diagram schematically showing the structure of a bubbler used in the tenth embodiment of the substrate processing apparatus of the present invention. Fig. 15 is an exploded and assembled perspective view partially showing the main components of the eleventh embodiment of the substrate processing apparatus of the present invention. Fig. 16 is a partial cross-sectional view of the substrate processing apparatus of the eleventh embodiment. Fig. 17 is a partial cross-sectional view of a twelfth embodiment of the substrate processing apparatus of the present invention.

81:第1藥液處理部(基板處理裝置) 81: The first chemical processing section (substrate processing equipment)

82:第1清洗處理部(基板處理裝置) 82: The first cleaning processing section (substrate processing equipment)

83:第2藥液處理部(基板處理裝置) 83: The second chemical processing section (substrate processing equipment)

84:第2清洗處理部(基板處理裝置) 84: The second cleaning processing section (substrate processing equipment)

86:間隙 86: Gap

821:處理槽 821: processing slot

821a:(處理槽之)底壁 821a: (processing tank) bottom wall

821f:貯存空間 821f: storage space

821g:上方開口 821g: upper opening

821h:(貯存空間之)內底面 821h: (of storage space) inner bottom surface

822:溢流槽 822: Overflow Slot

831:流體管 831: fluid pipe

831a~831d:流體管 831a~831d: fluid pipe

834:處理液噴出口 834: Treatment Liquid Ejection Port

841:起泡器 841: Bubbler

841d:起泡器 841d: Bubbler

845:氣泡噴出口 845: Bubble Ejection

851:起泡器 851: Bubbler

851c:起泡器 851c: Bubbler

F:流體 F: fluid

F1~F6:流體 F1~F6: fluid

VS:假想鉛直面 VS: imaginary face upright

W:基板 W: substrate

Wc:(基板之)中心 Wc: (of the substrate) center

X:第1水平方向 X: 1st horizontal direction

Y:第2水平方向 Y: 2nd horizontal direction

Z:鉛直方向 Z: Vertical direction

Claims (17)

一種基板處理裝置,其特徵在於具備: 處理槽,其具有貯存處理液之貯存空間,一面使上述處理液自上述貯存空間之上方開口溢流、一面將基板浸漬於貯存在上述貯存空間之上述處理液中,而對上述基板進行處理; 基板保持部,其於上述貯存空間內將上述基板以豎立姿勢保持; 處理液噴出部,其具有在保持於上述基板保持部之上述基板之下方側噴出上述處理液之處理液噴出口,使自上述處理液噴出口噴出之上述處理液朝向上述貯存空間之內底面流動;及 氣泡供給部,其設置於保持在上述基板保持部之上述基板之下方側且上述處理液噴出口之上方側,對貯存於上述貯存空間之上述處理液供給氣泡;且 於鉛直方向上且上述氣泡供給部與上述貯存空間之內底面之間,將經由上述貯存空間之內底面朝上方流動之上述處理液之至少一部分作為分流對象液,將上述分流對象液之流體分流成複數個上升流而向保持於上述基板保持部之上述基板引導。A substrate processing device, characterized by having: A processing tank, which has a storage space for storing a processing liquid, while allowing the processing liquid to overflow from the upper opening of the storage space, while immersing the substrate in the processing liquid stored in the storage space, to process the substrate; A substrate holding portion for holding the substrate in an upright posture in the storage space; A processing liquid ejection portion having a processing liquid ejection port for ejecting the processing liquid on the lower side of the substrate held in the substrate holding portion, and the processing liquid ejected from the processing liquid ejection port flows toward the inner bottom surface of the storage space ;and A bubble supply part, which is provided on the lower side of the substrate held in the substrate holding part and on the upper side of the processing liquid ejection port, and supplies bubbles to the processing liquid stored in the storage space; and In the vertical direction and between the bubble supply part and the inner bottom surface of the storage space, at least a part of the processing liquid flowing upward through the inner bottom surface of the storage space is used as the branch target liquid, and the fluid of the branch target liquid is branched A plurality of upward flows are formed and guided to the substrate held by the substrate holding portion. 如請求項1之基板處理裝置,其進而具備: 分流部,其將上述分流對象液之流體分流成複數個上升流; 上述分流部具有: 限制部位,其限制上述分流對象液朝上方流動,將上述分流對象液於水平面內分開;及 複數個貫通部位,其等於水平面內與上述限制部位相鄰並於鉛直方向貫通設置,將經由上述限制部位流入而來之上述處理液向保持於上述基板保持部之上述基板引導。Such as the substrate processing apparatus of claim 1, which further includes: A splitter, which splits the fluid of the above-mentioned split target liquid into a plurality of upward flows; The above-mentioned shunt unit has: Restriction part, which restricts the flow of the above-mentioned diversion target liquid upwards, and separates the above-mentioned diversion target liquid in a horizontal plane; and A plurality of penetrating portions are provided adjacent to the restriction portion in a horizontal plane and penetrating in a vertical direction, and guide the processing liquid flowing in through the restriction portion to the substrate held by the substrate holding portion. 如請求項2之基板處理裝置,其中 上述處理液噴出部具有複數根流體管,其等延伸設置於第1水平方向,且於側壁沿上述第1水平方向排列設置複數個上述處理液噴出口, 上述複數根流體管於與上述第1水平方向正交之第2水平方向互相離開配置,且於上述第2水平方向上彼此相鄰之上述流體管之間配置上述限制部位。Such as the substrate processing apparatus of claim 2, wherein The processing liquid ejection portion has a plurality of fluid pipes extending in a first horizontal direction, and a plurality of processing liquid ejection ports are arranged on the side wall along the first horizontal direction, and The plurality of fluid pipes are arranged apart from each other in a second horizontal direction orthogonal to the first horizontal direction, and the restriction portion is arranged between the fluid pipes adjacent to each other in the second horizontal direction. 如請求項3之基板處理裝置,其中 於上述第2水平方向上彼此相鄰之上述流體管與上述處理槽之間,進而配置上述限制部位。Such as the substrate processing apparatus of claim 3, wherein The restriction portion is further arranged between the fluid pipe and the treatment tank which are adjacent to each other in the second horizontal direction. 如請求項2之基板處理裝置,其中 上述基板保持部於第1水平方向互相離開並保持複數塊上述基板, 上述氣泡供給部具有複數個起泡器,其等延伸設置於上述第1水平方向,且於側壁沿上述第1水平方向排列設置複數個噴出上述氣泡之氣泡噴出口, 上述基板與上述氣泡噴出口交替位於上述第1水平方向上, 上述氣泡噴出口各自朝向上述第1水平方向上相鄰之上述基板間噴出上述氣泡。Such as the substrate processing apparatus of claim 2, wherein The substrate holding portion is separated from each other in the first horizontal direction and holds a plurality of the substrates, The bubble supply unit has a plurality of bubblers, which are extended in the first horizontal direction, and a plurality of bubble ejection ports for ejecting the bubbles are arranged in a side wall along the first horizontal direction. The substrate and the bubble ejection port are alternately located in the first horizontal direction, Each of the air bubble ejection ports ejects the air bubbles toward between the adjacent substrates in the first horizontal direction. 如請求項2之基板處理裝置,其中 上述限制部位延伸設置於第1水平方向, 上述處理液噴出部具有複數根流體管,其等延伸設置於與上述第1水平方向正交之第2水平方向,且於側壁沿上述第2水平方向排列設置複數個上述處理液噴出口。Such as the substrate processing apparatus of claim 2, wherein The restriction portion is extended in the first horizontal direction, The processing liquid ejection portion has a plurality of fluid pipes extending in a second horizontal direction orthogonal to the first horizontal direction, and a plurality of processing liquid ejection ports are arranged in a side wall along the second horizontal direction. 如請求項6之基板處理裝置,其中 上述基板保持部於上述第1水平方向互相離開並保持複數塊上述基板, 上述氣泡供給部具有複數個起泡器,其等延伸設置於上述第1水平方向,且於側壁沿上述第1水平方向排列設置複數個噴出上述氣泡之氣泡噴出口, 上述基板與上述氣泡噴出口交替位於上述第1水平方向上, 上述氣泡噴出口各自朝向上述第1水平方向上相鄰之上述基板間噴出上述氣泡。Such as the substrate processing apparatus of claim 6, wherein The substrate holding portion is spaced apart from each other in the first horizontal direction and holds a plurality of the substrates, The bubble supply unit has a plurality of bubblers, which are extended in the first horizontal direction, and a plurality of bubble ejection ports for ejecting the bubbles are arranged in a side wall along the first horizontal direction. The substrate and the bubble ejection port are alternately located in the first horizontal direction, Each of the air bubble ejection ports ejects the air bubbles toward between the adjacent substrates in the first horizontal direction. 如請求項2至7中任一項之基板處理裝置,其中 上述限制部位位於上述氣泡供給部之鉛直正下方,自下方支持上述氣泡供給部。Such as the substrate processing apparatus of any one of claims 2 to 7, wherein The restriction portion is located vertically directly below the air bubble supply part, and supports the air bubble supply part from below. 如請求項5或7之基板處理裝置,其中 上述貫通部位延伸設置於與上述氣泡噴出口之排列方向平行之方向。Such as the substrate processing apparatus of claim 5 or 7, wherein The penetration portion extends in a direction parallel to the arrangement direction of the bubble ejection ports. 如請求項1之基板處理裝置,其中 上述處理液噴出部具有複數根流體管,其等延伸設置於第1水平方向,且於側壁沿上述第1水平方向排列設置複數個上述處理液噴出口, 上述氣泡供給部具有起泡器,其延伸設置於上述第1水平方向,且於側壁沿上述第1水平方向排列設置複數個噴出上述氣泡之氣泡噴出口, 上述起泡器配置在與上述第1水平方向正交之第2水平方向上彼此相鄰之上述流體管間,將於相鄰之上述流體管間流動之上述分流對象液之流體分流成複數個上升流。Such as the substrate processing apparatus of claim 1, wherein The processing liquid ejection portion has a plurality of fluid pipes extending in a first horizontal direction, and a plurality of processing liquid ejection ports are arranged on the side wall along the first horizontal direction, and The bubble supply unit has a bubbler that extends in the first horizontal direction, and a plurality of bubble ejection ports for ejecting the bubbles are arranged in a side wall along the first horizontal direction. The bubbler is arranged between the fluid pipes adjacent to each other in a second horizontal direction orthogonal to the first horizontal direction, and divides the fluid of the split target liquid flowing between the adjacent fluid pipes into a plurality of Upflow. 如請求項1或10之基板處理裝置,其中 在上述貯存空間內相對於通過保持於上述基板保持部之上述基板之中心、且與上述基板之表面正交之假想鉛直面,對稱配置上述處理液噴出部及上述氣泡供給部。Such as the substrate processing apparatus of claim 1 or 10, wherein In the storage space, the processing liquid ejection portion and the bubble supply portion are symmetrically arranged with respect to a virtual vertical plane passing through the center of the substrate held by the substrate holding portion and orthogonal to the surface of the substrate. 如請求項2至7中任一項之基板處理裝置,其中 在上述貯存空間內相對於通過保持於上述基板保持部之上述基板之中心、且與上述基板之表面正交之假想鉛直面,對稱配置上述處理液噴出部、上述氣泡供給部及上述分流部。Such as the substrate processing apparatus of any one of claims 2 to 7, wherein In the storage space, the processing liquid ejection section, the bubble supply section, and the branching section are symmetrically arranged with respect to a virtual vertical plane passing through the center of the substrate held by the substrate holding section and orthogonal to the surface of the substrate. 如請求項1至7及10中任一項之基板處理裝置,其中 於上述處理槽之側壁中上述上方開口附近之區域,設置側壁開口, 將朝向上述上方開口流動之上述處理液分流成經由上述上方開口溢流者、及經由上述側壁開口自上述處理槽排出者。Such as the substrate processing apparatus of any one of claims 1 to 7 and 10, wherein In the area near the upper opening in the side wall of the processing tank, a side wall opening is provided, The processing liquid flowing toward the upper opening is divided into one that overflows through the upper opening and one that is discharged from the processing tank through the side wall opening. 如請求項1至7及10中任一項之基板處理裝置,其中 上述處理液噴出口朝向上述貯存空間之內底面開口。Such as the substrate processing apparatus of any one of claims 1 to 7 and 10, wherein The processing liquid ejection port opens toward the inner bottom surface of the storage space. 如請求項1至7及10中任一項之基板處理裝置,其中 上述處理液噴出口朝向保持於上述基板保持部之上述基板開口, 上述處理液噴出部將自上述處理液噴出口噴出之上述處理液向上述貯存空間之內底面引導。Such as the substrate processing apparatus of any one of claims 1 to 7 and 10, wherein The processing liquid ejection port opens toward the substrate held by the substrate holding portion, and The processing liquid ejection portion guides the processing liquid ejected from the processing liquid ejection port to the inner bottom surface of the storage space. 如請求項15之基板處理裝置,其中 上述罩構件具有貫通孔,其使自上述處理液噴出口噴出之上述處理液之一部分朝向保持於上述基板保持部之上述基板流通。Such as the substrate processing apparatus of claim 15, wherein The cover member has a through hole that allows a part of the processing liquid ejected from the processing liquid ejection port to circulate toward the substrate held by the substrate holding portion. 一種基板處理方法,其特徵在於具備: 溢流步驟,其藉由對設置於處理槽之貯存空間噴出處理液而於上述貯存空間貯存上述處理液,且使上述處理液自上述貯存空間之上方開口溢流; 浸漬步驟,其使基板浸漬於貯存在上述貯存空間之上述處理液;及 氣泡供給步驟,其從浸漬於上述貯存空間內之上述處理液之上述基板之下方側,自氣泡供給部供給氣泡;且 上述溢流步驟與上述浸漬步驟及上述氣泡供給步驟並行進行,在上述氣泡供給部與上述貯存空間之內底面之間,將經由上述貯存空間之內底面朝上方流動之上述處理液之流體之至少一部分分流成複數個上升流而向上述基板引導。A substrate processing method, characterized by having: The overflow step, which stores the treatment liquid in the storage space by spraying the treatment liquid to the storage space provided in the treatment tank, and causes the treatment liquid to overflow from the upper opening of the storage space; An immersion step of immersing the substrate in the above-mentioned treatment liquid stored in the above-mentioned storage space; and A bubble supply step, which supplies bubbles from a bubble supply part from the lower side of the substrate of the processing liquid immersed in the storage space; and The overflow step is performed in parallel with the immersion step and the bubble supply step. Between the bubble supply portion and the inner bottom surface of the storage space, at least one of the fluid of the treatment liquid flowing upward through the inner bottom surface of the storage space Part of the flow is divided into a plurality of upward flows and guided to the above-mentioned substrate.
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