TW202128719A - Pyrromethene boron complex, light-emitting element containing same, light-emitting element, display device, and illumination device - Google Patents

Pyrromethene boron complex, light-emitting element containing same, light-emitting element, display device, and illumination device Download PDF

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TW202128719A
TW202128719A TW110101480A TW110101480A TW202128719A TW 202128719 A TW202128719 A TW 202128719A TW 110101480 A TW110101480 A TW 110101480A TW 110101480 A TW110101480 A TW 110101480A TW 202128719 A TW202128719 A TW 202128719A
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星野秀尭
長尾和真
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日商東麗股份有限公司
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Abstract

By means of a pyrromethene boron complex represented by general formula (1), provided are: a light-emitting material having a high fluorescence quantum yield and a sharp light-emitting spectrum; and a light-emitting element having a high light-emitting efficiency, color purity, and a durability.

Description

吡咯亞甲基硼錯合物、含有其的發光元件、顯示裝置及照明裝置Pyrrolomethylene boron complex, light-emitting element, display device and lighting device containing the same

本發明是有關於一種吡咯亞甲基硼錯合物、含有其的發光元件、顯示裝置及照明裝置。The present invention relates to a pyrromethene boron complex, a light-emitting element, a display device and a lighting device containing the pyrromethene boron complex.

藉由自陰極注入的電子與自陽極注入的電洞在夾持於兩極的發光層內再結合而發光的有機薄膜發光元件具有為薄型且可實現低驅動電壓及高亮度發光、進而藉由選擇發光材料而實現多色發光的特徵。特別是,藉由於發光層中組合使用主體材料與摻雜劑材料,可獲得高效率地發出藍色、綠色及紅色此三原色的光的發光元件。The organic thin-film light-emitting element that emits light by recombining electrons injected from the cathode and holes injected from the anode in the light-emitting layer sandwiched between the two poles has a thin profile and can achieve low driving voltage and high brightness light emission, and then by selecting The luminescent material realizes the characteristics of multi-color luminescence. In particular, by using a host material and a dopant material in combination in the light-emitting layer, a light-emitting element that efficiently emits light of the three primary colors of blue, green, and red can be obtained.

作為摻雜劑,通常可使用螢光量子產率高的色素。例如已知,具有吡咯亞甲基骨架的錯合物是具備作為螢光量子產率高、斯托克斯位移(Stokes shift)及發光光譜的峰值半值寬度小的摻雜劑而獲得高效率所需的必要條件的化合物,使用吡咯亞甲基錯合物作為摻雜劑的發光元件顯示出良好的元件特性(例如,參照專利文獻1)。進而,近年來,以高發光效率為目標,對包含熱活化延遲螢光(Thermally Activated Delayed Fluorescence,TADF)材料與吡咯亞甲基硼錯合物的發光元件進行了研究(例如,參照專利文獻2)。 [現有技術文獻] [專利文獻]As the dopant, a pigment with a high fluorescence quantum yield can usually be used. For example, it is known that complexes with a pyrromethene skeleton are provided as a dopant with high fluorescence quantum yield, a Stokes shift and a small peak half-value width of the emission spectrum to obtain high efficiency. As a compound required for the necessary conditions, a light-emitting device using a pyrromethene complex as a dopant exhibits good device characteristics (for example, refer to Patent Document 1). Furthermore, in recent years, with the goal of high luminous efficiency, a light-emitting element comprising a thermally activated delayed fluorescence (TADF) material and a pyrromethene boron complex has been studied (for example, refer to Patent Document 2 ). [Prior Art Literature] [Patent Literature]

專利文獻1:日本專利特開2003-12676號公報 專利文獻2:國際公開第2016/056559號Patent Document 1: Japanese Patent Laid-Open No. 2003-12676 Patent Document 2: International Publication No. 2016/056559

[發明所欲解決之課題] 於將有機薄膜發光元件用作顯示裝置或照明裝置的情況下,要求擴大色域。色域於xy色度圖中決定表示紅色、綠色及藍色各自的發光的頂點座標,並由連接它們的三角形來表示。為了擴大色域,必須使紅色、綠色及藍色的各頂點座標為適當的色度以擴大該三角形的面積,為此正在進行各種顏色設計。[The problem to be solved by the invention] When the organic thin-film light-emitting element is used as a display device or a lighting device, it is required to expand the color gamut. The color gamut is determined in the xy chromaticity diagram to indicate the apex coordinates of red, green, and blue light, and is represented by a triangle connecting them. In order to expand the color gamut, the vertex coordinates of red, green, and blue must be adjusted to the appropriate chromaticity to expand the area of the triangle. For this reason, various color designs are being carried out.

色度由發光峰值波長與顏色純度的組合決定。顏色純度由發光光譜的寬度決定,發光光譜的寬度越窄,越接近單色光,顏色純度越高。為了實現廣色域化,特別重要的是提高顏色純度,強烈要求具有尖銳的發光光譜的發光材料。The chromaticity is determined by the combination of the emission peak wavelength and the color purity. The color purity is determined by the width of the luminescence spectrum. The narrower the width of the luminescence spectrum, the closer to monochromatic light, the higher the color purity. In order to achieve a wide color gamut, it is particularly important to improve color purity, and there is a strong demand for luminescent materials with sharp emission spectra.

另外,於將有機薄膜發光元件用作顯示裝置或照明裝置的情況下,要求提高發光元件的耐久性。為了提高發光元件的耐久性,必須提高發光材料的穩定性。In addition, when an organic thin-film light-emitting element is used as a display device or a lighting device, it is required to improve the durability of the light-emitting element. In order to improve the durability of the light-emitting element, the stability of the light-emitting material must be improved.

另一方面,就亮度提高與節電的觀點而言,有機薄膜發光元件理想的是發光效率高。特別是於近年來使用不斷擴大的移動顯示裝置中,節電化成為特別重要的課題。On the other hand, from the viewpoint of brightness improvement and power saving, the organic thin-film light-emitting element desirably has high luminous efficiency. In particular, in mobile display devices that have been increasingly used in recent years, power saving has become a particularly important issue.

於此種狀況下,於將吡咯亞甲基硼錯合物用作摻雜劑的情況下,雖然是可獲得尖銳的發光光譜的有用的發光材料,但對於發光元件要求更高的發光效率與更高的耐久性。但是,難以保持尖銳的發光光譜並達成具有高發光效率與高耐久性的發光元件。Under such circumstances, when pyrromethene boron complex is used as a dopant, although it is a useful light-emitting material that can obtain a sharp emission spectrum, it is required for light-emitting elements to have higher luminous efficiency and Higher durability. However, it is difficult to maintain a sharp emission spectrum and achieve a light-emitting element with high luminous efficiency and high durability.

本發明的目的在於解決所述現有技術的問題,並提供螢光量子產率高、發光光譜尖銳的發光材料以及發光效率、顏色純度及耐久性高的發光元件。 [解決課題之手段]The purpose of the present invention is to solve the aforementioned problems of the prior art and provide a luminescent material with high fluorescent quantum yield and sharp emission spectrum, and a luminescent element with high luminous efficiency, color purity and durability. [Means to solve the problem]

本發明為通式(1)所表示的吡咯亞甲基硼錯合物。The present invention is a pyrromethene boron complex represented by the general formula (1).

[化1]

Figure 02_image007
[化1]
Figure 02_image007

R1 ~R6 分別獨立地選自由氫原子、烷基、環烷基、雜環基、烯基、環烯基、炔基、羥基、硫醇基、烷氧基、烷硫基、芳基醚基、芳基硫醚基、芳基、雜芳基、胺基、矽烷基、矽氧烷基及氧硼基所組成的群組中。該些基可進一步具有取代基。其中,R1 ~R4 中的至少一個為氫原子或烷基。 X1 及X2 分別獨立地選自由烷基、環烷基、雜環基、烯基、環烯基、炔基、羥基、硫醇基、烷氧基、烷硫基、芳基醚基、芳基硫醚基、芳基、雜芳基、鹵素及氰基所組成的群組中。該些基可進一步具有取代基。 R7 是由下述通式(2)所表示。R 1 to R 6 are each independently selected from a hydrogen atom, an alkyl group, a cycloalkyl group, a heterocyclic group, an alkenyl group, a cycloalkenyl group, an alkynyl group, a hydroxyl group, a thiol group, an alkoxy group, an alkylthio group, and an aryl group. Ether group, aryl sulfide group, aryl group, heteroaryl group, amine group, silyl group, siloxyalkyl group and oxyboron group. These groups may further have a substituent. Among them, at least one of R 1 to R 4 is a hydrogen atom or an alkyl group. X 1 and X 2 are each independently selected from alkyl, cycloalkyl, heterocyclic, alkenyl, cycloalkenyl, alkynyl, hydroxyl, thiol, alkoxy, alkylthio, aryl ether, Aryl sulfide group, aryl group, heteroaryl group, halogen and cyano group. These groups may further have a substituent. R 7 is represented by the following general formula (2).

[化2]

Figure 02_image009
[化2]
Figure 02_image009

R8 ~R10 分別獨立地選自由氫原子、烷基、環烷基、雜環基、烯基、環烯基、炔基、羥基、硫醇基、烷氧基、烷硫基、芳基醚基、芳基硫醚基、芳基、雜芳基、鹵素、氰基、醛基、醯基、羧基、酯基、醯胺基、磺醯基、磺酸酯基、磺醯胺基、胺基、硝基、矽烷基、矽氧烷基、氧硼基及氧化膦基所組成的群組中。該些基可進一步具有取代基。 R11 選自由烷基、環烷基、雜環基、烯基、環烯基、炔基、羥基、硫醇基、烷氧基、烷硫基、芳基醚基、芳基硫醚基、芳基、雜芳基、鹵素、氰基、醛基、醯基、羧基、酯基、醯胺基、磺醯基、磺酸酯基、磺醯胺基、胺基、硝基、矽烷基、矽氧烷基、氧硼基及氧化膦基所組成的群組中。該些基可進一步具有取代基。 Ar1 為經取代或未經取代的芳基、或者經取代或未經取代的雜芳基。R 8 to R 10 are each independently selected from a hydrogen atom, an alkyl group, a cycloalkyl group, a heterocyclic group, an alkenyl group, a cycloalkenyl group, an alkynyl group, a hydroxyl group, a thiol group, an alkoxy group, an alkylthio group, and an aryl group. Ether group, aryl sulfide group, aryl group, heteroaryl group, halogen, cyano group, aldehyde group, acyl group, carboxyl group, ester group, amide group, sulfonyl group, sulfonate group, sulfonamide group, Amine group, nitro group, silyl group, siloxyalkyl group, oxyboron group and phosphine oxide group. These groups may further have a substituent. R 11 is selected from alkyl, cycloalkyl, heterocyclyl, alkenyl, cycloalkenyl, alkynyl, hydroxyl, thiol, alkoxy, alkylthio, aryl ether, aryl sulfide, Aryl, heteroaryl, halogen, cyano, aldehyde, amide, carboxyl, ester, amide, sulfonate, sulfonate, sulfonamide, amine, nitro, silyl, In the group consisting of siloxyalkyl, oxyboron and phosphine oxide groups. These groups may further have a substituent. Ar 1 is a substituted or unsubstituted aryl group, or a substituted or unsubstituted heteroaryl group.

另外,本發明的另一形態是一種發光元件,該發光元件是具有陽極與陰極、以及存在於該陽極與該陰極之間的發光層且所述發光層藉由電能而發光的元件,所述發光層中含有所述吡咯亞甲基硼錯合物。 [發明的效果]In addition, another aspect of the present invention is a light-emitting element that has an anode and a cathode, and a light-emitting layer existing between the anode and the cathode, and the light-emitting layer emits light by electric energy. The light-emitting layer contains the pyrromethene boron complex. [Effects of the invention]

藉由本發明,可提供螢光量子產率高、發光光譜尖銳的發光材料以及發光效率、顏色純度及耐久性高的發光元件。With the present invention, it is possible to provide a luminescent material with high fluorescent quantum yield and a sharp emission spectrum, and a luminescent element with high luminous efficiency, color purity and durability.

以下對本發明的吡咯亞甲基硼錯合物、含有其的發光元件、顯示裝置及照明裝置的較佳的實施形態進行詳細說明。其中,本發明並不限定於以下的實施形態,可根據目的或用途進行各種變更來實施。Hereinafter, preferred embodiments of the pyrromethene boron complex of the present invention, a light-emitting element, a display device, and a lighting device containing the same will be described in detail. However, the present invention is not limited to the following embodiments, and can be implemented with various changes depending on the purpose or application.

<吡咯亞甲基硼錯合物> 本發明的吡咯亞甲基硼錯合物是由通式(1)所表示。<Pyrromethene boron complexes> The pyrromethene boron complex of the present invention is represented by the general formula (1).

[化3]

Figure 02_image011
[化3]
Figure 02_image011

R1 ~R6 分別獨立地選自由氫原子、烷基、環烷基、雜環基、烯基、環烯基、炔基、羥基、硫醇基、烷氧基、烷硫基、芳基醚基、芳基硫醚基、芳基、雜芳基、胺基、矽烷基、矽氧烷基及氧硼基所組成的群組中。該些基可進一步具有取代基。其中,R1 ~R4 中的至少一個為氫原子或烷基。R 1 to R 6 are each independently selected from a hydrogen atom, an alkyl group, a cycloalkyl group, a heterocyclic group, an alkenyl group, a cycloalkenyl group, an alkynyl group, a hydroxyl group, a thiol group, an alkoxy group, an alkylthio group, and an aryl group. Ether group, aryl sulfide group, aryl group, heteroaryl group, amine group, silyl group, siloxyalkyl group and oxyboron group. These groups may further have a substituent. Among them, at least one of R 1 to R 4 is a hydrogen atom or an alkyl group.

X1 及X2 分別獨立地選自由烷基、環烷基、雜環基、烯基、環烯基、炔基、羥基、硫醇基、烷氧基、烷硫基、芳基醚基、芳基硫醚基、芳基、雜芳基、鹵素及氰基所組成的群組中。該些基可進一步具有取代基。X 1 and X 2 are each independently selected from alkyl, cycloalkyl, heterocyclic, alkenyl, cycloalkenyl, alkynyl, hydroxyl, thiol, alkoxy, alkylthio, aryl ether, Aryl sulfide group, aryl group, heteroaryl group, halogen and cyano group. These groups may further have a substituent.

R7 是由下述通式(2)所表示。R 7 is represented by the following general formula (2).

[化4]

Figure 02_image013
[化4]
Figure 02_image013

R8 ~R10 分別獨立地選自由氫原子、烷基、環烷基、雜環基、烯基、環烯基、炔基、羥基、硫醇基、烷氧基、烷硫基、芳基醚基、芳基硫醚基、芳基、雜芳基、鹵素、氰基、醛基、醯基、羧基、酯基、醯胺基、磺醯基、磺酸酯基、磺醯胺基、胺基、硝基、矽烷基、矽氧烷基、氧硼基及氧化膦基所組成的群組中。該些基可進一步具有取代基。R 8 to R 10 are each independently selected from a hydrogen atom, an alkyl group, a cycloalkyl group, a heterocyclic group, an alkenyl group, a cycloalkenyl group, an alkynyl group, a hydroxyl group, a thiol group, an alkoxy group, an alkylthio group, and an aryl group. Ether group, aryl sulfide group, aryl group, heteroaryl group, halogen, cyano group, aldehyde group, acyl group, carboxyl group, ester group, amide group, sulfonyl group, sulfonate group, sulfonamide group, Amine group, nitro group, silyl group, siloxyalkyl group, oxyboron group and phosphine oxide group. These groups may further have a substituent.

R11 選自由烷基、環烷基、雜環基、烯基、環烯基、炔基、羥基、硫醇基、烷氧基、烷硫基、芳基醚基、芳基硫醚基、芳基、雜芳基、鹵素、氰基、醛基、醯基、羧基、酯基、醯胺基、磺醯基、磺酸酯基、磺醯胺基、胺基、硝基、矽烷基、矽氧烷基、氧硼基及氧化膦基所組成的群組中。該些基可進一步具有取代基。R 11 is selected from alkyl, cycloalkyl, heterocyclyl, alkenyl, cycloalkenyl, alkynyl, hydroxyl, thiol, alkoxy, alkylthio, aryl ether, aryl sulfide, Aryl, heteroaryl, halogen, cyano, aldehyde, amide, carboxyl, ester, amide, sulfonate, sulfonate, sulfonamide, amine, nitro, silyl, In the group consisting of siloxyalkyl, oxyboron and phosphine oxide groups. These groups may further have a substituent.

Ar1 為經取代或未經取代的芳基、或者經取代或未經取代的雜芳基。Ar 1 is a substituted or unsubstituted aryl group, or a substituted or unsubstituted heteroaryl group.

於吡咯亞甲基骨架中,以下有時將經R7 取代的部位稱為「橋頭位」。In the pyrromethene skeleton, the site substituted with R 7 may be referred to as the "bridgehead position" below.

本發明中,將具有下式所表示的吡咯亞甲基骨架者、以及於吡咯亞甲基骨架的一部分中具有縮環結構而環結構擴大者一起稱為「吡咯亞甲基」。In the present invention, those having a pyrromethene skeleton represented by the following formula, and those having a condensed ring structure in a part of the pyrromethene skeleton with an enlarged ring structure are collectively referred to as "pyrromethene".

[化5]

Figure 02_image015
[化5]
Figure 02_image015

於所述所有基中,氫亦可為氘。於以下所說明的化合物或其部分結構中亦相同。In all the groups described above, hydrogen may also be deuterium. The same applies to the compounds described below or partial structures thereof.

另外,於所述所有基中,作為經取代時的取代基,較佳為選自由烷基、環烷基、雜環基、烯基、環烯基、炔基、芳基、雜芳基、羥基、硫醇基、烷氧基、烷硫基、芳基醚基、芳基硫醚基、鹵素、氰基、醛基、醯基、羧基、酯基、醯胺基、醯基、磺醯基、磺酸酯基、磺醯胺基、胺基、硝基、矽烷基、矽氧烷基、氧硼基、氧化膦基及側氧基所組成的群組中的基。進而,更佳為於後述的各取代基的說明中設為較佳的具體的取代基。另外,該些取代基可進一步由所述取代基取代。In addition, among all the groups, the substituents when substituted are preferably selected from the group consisting of alkyl, cycloalkyl, heterocyclyl, alkenyl, cycloalkenyl, alkynyl, aryl, heteroaryl, Hydroxyl group, thiol group, alkoxy group, alkylthio group, aryl ether group, aryl sulfide group, halogen, cyano group, aldehyde group, acyl group, carboxyl group, ester group, amide group, amide group, sulfonyl group Group, sulfonate group, sulfonamide group, amine group, nitro group, silyl group, siloxyalkyl group, oxyboron group, phosphine oxide group and pendant oxy group. Furthermore, it is more preferable to set it as a preferable concrete substituent in the description of each substituent mentioned later. In addition, these substituents may be further substituted with the above-mentioned substituents.

於本發明的說明中,所謂「未經取代」,是指與作為對象的基本骨架或基鍵結的原子僅為氫原子或氘原子。於以下說明的化合物或其部分結構中,「經取代或未經取代的」的情況亦與所述相同。In the description of the present invention, the term "unsubstituted" means that the atom bonded to the target basic skeleton or group is only a hydrogen atom or a deuterium atom. In the compounds described below or partial structures thereof, the case of "substituted or unsubstituted" is also the same as described above.

所謂烷基,例如表示甲基、乙基、正丙基、異丙基、正丁基、第二丁基、第三丁基等飽和脂肪族烴基,其可經取代,亦可未經取代。經取代時的追加的取代基並無特別限制,例如可列舉烷基、鹵素、芳基、雜芳基等,關於該方面,於以下的記載中亦為相通的。烷基的碳數並無特別限定,就獲取的容易性或成本的方面而言,較佳為1以上且20以下、更佳為1以上且8以下的範圍。The alkyl group means, for example, a saturated aliphatic hydrocarbon group such as a methyl group, an ethyl group, a n-propyl group, an isopropyl group, a n-butyl group, a second butyl group, and a tertiary butyl group, and it may be substituted or unsubstituted. The additional substituent at the time of substitution is not particularly limited, and examples thereof include an alkyl group, a halogen, an aryl group, a heteroaryl group, etc., and this aspect is also the same in the following description. The carbon number of the alkyl group is not particularly limited, but it is preferably in the range of 1 or more and 20 or less, more preferably in the range of 1 or more and 8 or less in terms of ease of availability and cost.

所謂環烷基,例如表示環丙基、環己基、降冰片基、金剛烷基等飽和脂環式烴基,其可經取代,亦可未經取代。烷基部分的碳數並無特別限定,較佳為3以上且20以下的範圍。The cycloalkyl group means, for example, a saturated alicyclic hydrocarbon group such as a cyclopropyl group, a cyclohexyl group, a norbornyl group, and an adamantyl group, which may be substituted or unsubstituted. The carbon number of the alkyl moiety is not particularly limited, but is preferably in the range of 3 or more and 20 or less.

所謂雜環基,例如表示吡喃環、哌啶環、環狀醯胺等於環內具有碳以外的原子的脂肪族環,其可經取代,亦可未經取代。雜環基的碳數並無特別限定,較佳為2以上且20以下的範圍。The heterocyclic group means, for example, a pyran ring, a piperidine ring, and a cyclic aliphatic ring having atoms other than carbon in the ring, which may be substituted or unsubstituted. The number of carbon atoms of the heterocyclic group is not particularly limited, but is preferably in the range of 2 or more and 20 or less.

所謂烯基,例如表示乙烯基、烯丙基、丁二烯基等含有雙鍵的不飽和脂肪族烴基,其可經取代,亦可未經取代。烯基的碳數並無特別限定,較佳為2以上且20以下的範圍。The alkenyl group means, for example, an unsaturated aliphatic hydrocarbon group containing a double bond, such as a vinyl group, an allyl group, and a butadienyl group, which may be substituted or unsubstituted. The carbon number of the alkenyl group is not particularly limited, but is preferably in the range of 2 or more and 20 or less.

所謂環烯基,例如表示環戊烯基、環戊二烯基、環己烯基等含有雙鍵的不飽和脂環式烴基,其可經取代,亦可未經取代。環烯基的碳數並無特別限定,較佳為3以上且20以下的範圍。The cycloalkenyl group means, for example, an unsaturated alicyclic hydrocarbon group containing a double bond, such as a cyclopentenyl group, a cyclopentadienyl group, and a cyclohexenyl group, which may be substituted or unsubstituted. The carbon number of the cycloalkenyl group is not particularly limited, but is preferably in the range of 3 or more and 20 or less.

所謂炔基,例如表示乙炔基等含有三鍵的不飽和脂肪族烴基,其可經取代,亦可未經取代。炔基的碳數並無特別限定,較佳為2以上且20以下的範圍。The alkynyl group means, for example, an unsaturated aliphatic hydrocarbon group containing a triple bond such as an ethynyl group, which may be substituted or unsubstituted. The carbon number of the alkynyl group is not particularly limited, but is preferably in the range of 2 or more and 20 or less.

所謂烷氧基,例如表示甲氧基、乙氧基、丙氧基等經由醚鍵而鍵結有脂肪族烴基的官能基,所述脂肪族烴基可經取代,亦可未經取代。烷氧基的碳數並無特別限定,較佳為1以上且20以下的範圍。The alkoxy group means, for example, a functional group to which an aliphatic hydrocarbon group is bonded via an ether bond, such as a methoxy group, an ethoxy group, and a propoxy group, and the aliphatic hydrocarbon group may be substituted or unsubstituted. The carbon number of the alkoxy group is not particularly limited, but is preferably in the range of 1 or more and 20 or less.

所謂烷硫基,是指烷氧基的醚鍵的氧原子被取代為硫原子者。烷硫基的烴基可經取代,亦可未經取代。烷硫基的碳數並無特別限定,較佳為1以上且20以下的範圍。The term "alkylthio group" means that the oxygen atom of the ether bond of the alkoxy group is substituted with a sulfur atom. The hydrocarbyl group of the alkylthio group may be substituted or unsubstituted. The carbon number of the alkylthio group is not particularly limited, but is preferably in the range of 1 or more and 20 or less.

所謂芳基醚基,例如表示苯氧基等經由醚鍵而鍵結有芳香族烴基的官能基,芳香族烴基可經取代,亦可未經取代。芳基醚基的碳數並無特別限定,較佳為6以上且40以下的範圍。The aryl ether group means, for example, a functional group such as a phenoxy group to which an aromatic hydrocarbon group is bonded via an ether bond. The aromatic hydrocarbon group may be substituted or unsubstituted. The carbon number of the aryl ether group is not particularly limited, but is preferably in the range of 6 or more and 40 or less.

所謂芳基硫醚基,是指芳基醚基的醚鍵的氧原子被取代為硫原子者。芳基硫醚基中的芳香族烴基可經取代,亦可未經取代。芳基硫醚基的碳數並無特別限定,較佳為6以上且40以下的範圍。The aryl sulfide group refers to the one in which the oxygen atom of the ether bond of the aryl ether group is substituted with a sulfur atom. The aromatic hydrocarbon group in the aryl sulfide group may be substituted or unsubstituted. The carbon number of the aryl sulfide group is not particularly limited, but is preferably in the range of 6 or more and 40 or less.

芳基可為單環或稠環中的任一種,例如表示苯基、萘基、芴基、苯並芴基、二苯並芴基、菲基、蒽基、苯並菲基、苯並蒽基、䓛基、芘基、熒蒽基、三亞苯基(triphenylenyl group)、苯並熒蒽基、二苯並蒽基、苝基、螺旋烴基(helicenyl group)等芳香族烴基。其中,較佳為選自由苯基、聯苯基、三聯苯基、萘基、芴基、菲基、蒽基、芘基、熒蒽基及三亞苯基所組成的群組中的基。芳基可經取代,亦可未經取代。本發明中,將聯苯基、三聯苯基等多個苯基經由單鍵鍵結而成的基視為具有芳基作為取代基的苯基。芳基的碳數並無特別限定,較佳為6以上且40以下、更佳為6以上且30以下的範圍。另外,苯基中,於該苯基中的鄰接的兩個碳原子上分別具有取代基的情況下,亦可以該些取代基彼此形成環結構。The aryl group can be any one of a single ring or a condensed ring, for example, it represents a phenyl group, a naphthyl group, a fluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenanthryl group, an anthryl group, a triphenylphenanthryl group, and a benzanthracene group. Aromatic hydrocarbon groups such as fluoranthene group, triphenylene group, pyrene group, fluoranthene group, triphenylenyl group, benzofluoranthene group, dibenzoanthracene group, perylene group, helicenyl group, etc. Among them, preferred is a group selected from the group consisting of phenyl, biphenyl, terphenyl, naphthyl, fluorenyl, phenanthryl, anthracenyl, pyrenyl, fluoranthene, and triphenylene. The aryl group may be substituted or unsubstituted. In the present invention, a group in which a plurality of phenyl groups such as a biphenyl group and a terphenyl group are bonded via a single bond is regarded as a phenyl group having an aryl group as a substituent. The carbon number of the aryl group is not particularly limited, but is preferably 6 or more and 40 or less, more preferably 6 or more and 30 or less. In addition, in the phenyl group, when each of the two adjacent carbon atoms in the phenyl group has a substituent, these substituents may form a ring structure with each other.

雜芳基可為單環或稠環中的任一種,例如表示吡啶基、呋喃基、苯硫基(thiophenyl group)、喹啉基、異喹啉基、吡嗪基、嘧啶基、噠嗪基、三嗪基、萘啶基、噌啉基、酞嗪基、喹噁啉基、喹唑啉基、苯並呋喃基、苯並苯硫基、吲哚基、二苯並呋喃基、二苯並苯硫基、咔唑基、苯並咔唑基、咔啉基(carbolinyl group)、吲哚並咔唑基、苯並呋喃並咔唑基、苯並噻吩並咔唑基、二氫茚並咔唑基、苯並喹啉基、吖啶基、二苯並吖啶基、苯並咪唑基、咪唑並吡啶基、苯並噁唑基、苯並噻唑基、啡啉基等於一個或多個環內具有碳及氫以外的原子、即雜原子的環狀芳香族基。作為雜原子,較佳為氮原子、氧原子或硫原子。雜芳基可經取代,亦可未經取代。雜芳基的碳數並無特別限定,較佳為2以上且40以下、更佳為2以上且30以下的範圍。The heteroaryl group can be any one of a single ring or a condensed ring, for example, pyridyl, furyl, thiophenyl group, quinolinyl, isoquinolinyl, pyrazinyl, pyrimidinyl, pyridazinyl , Triazinyl, naphthyridinyl, cinnolinyl, phthalazinyl, quinoxalinyl, quinazolinyl, benzofuranyl, benzothiophenyl, indolyl, dibenzofuranyl, diphenyl Acetylthio, carbazolyl, benzocarbazolyl, carbolinyl group, indolocarbazolyl, benzofurocarbazolyl, benzothienocarbazolyl, dihydroindeno Carbazolyl, benzoquinolinyl, acridinyl, dibenzoacridinyl, benzimidazolyl, imidazopyridyl, benzoxazolyl, benzothiazolyl, phenanthroline are equal to one or more A cyclic aromatic group having atoms other than carbon and hydrogen, that is, heteroatoms in the ring. As the hetero atom, a nitrogen atom, an oxygen atom or a sulfur atom is preferred. Heteroaryl groups may be substituted or unsubstituted. The carbon number of a heteroaryl group is not specifically limited, Preferably it is the range of 2 or more and 40 or less, More preferably, it is the range of 2 or more and 30 or less.

所謂鹵素,表示選自氟、氯、溴及碘中的原子。The term "halogen" means an atom selected from fluorine, chlorine, bromine and iodine.

所謂氰基,是指結構為-CN所表示的官能基。此處,與其他基鍵結的是碳原子。The so-called cyano group refers to a functional group represented by the structure -CN. Here, it is a carbon atom that is bonded to other groups.

所謂醛基,是指結構為-C(=O)H所表示的官能基。此處,與其他基鍵結的是碳原子。The so-called aldehyde group means a functional group represented by the structure -C(=O)H. Here, it is a carbon atom that is bonded to other groups.

所謂醯基,例如表示乙醯基、丙醯基、苯甲醯基、丙烯醯基等經由羰基而鍵結有烷基、環烷基、烯基、炔基、芳基、雜芳基的官能基。該些取代基可進一步經取代。醯基的碳數並無特別限定,較佳為2以上且40以下,更佳為2以上且30以下。The so-called acyl group means, for example, an acetyl group, a propionyl group, a benzyl group, a acryloyl group, etc., which are bonded via a carbonyl group to an alkyl group, a cycloalkyl group, an alkenyl group, alkynyl group, an aryl group, a heteroaryl group, etc. base. These substituents may be further substituted. The carbon number of the acyl group is not particularly limited, but is preferably 2 or more and 40 or less, and more preferably 2 or more and 30 or less.

所謂酯基,例如表示烷基、環烷基、芳基、雜芳基等經由酯鍵鍵結而成的官能基。該些取代基可進一步經取代。酯基的碳數並無特別限定,較佳為1以上且20以下的範圍。更具體而言,可列舉:甲氧基羰基等甲基酯基、乙氧基羰基等乙基酯基、丙氧基羰基等丙基酯基、丁氧基羰基等丁基酯基、異丙氧基甲氧基羰基等異丙基酯基、己氧基羰基等己基酯基、苯氧基羰基等苯基酯基等。The term "ester group" means, for example, a functional group formed by bonding an alkyl group, a cycloalkyl group, an aryl group, and a heteroaryl group via an ester bond. These substituents may be further substituted. The carbon number of the ester group is not particularly limited, but is preferably in the range of 1 or more and 20 or less. More specifically, examples include methyl ester groups such as methoxycarbonyl, ethyl ester groups such as ethoxycarbonyl, propyl ester groups such as propoxycarbonyl, butyl ester groups such as butoxycarbonyl, isopropyl Isopropyl ester groups such as oxymethoxycarbonyl, hexyl ester groups such as hexyloxycarbonyl, phenyl ester groups such as phenoxycarbonyl, and the like.

所謂醯胺基,例如表示烷基、環烷基、芳基、雜芳基等經由醯胺鍵鍵結而成的官能基。該些取代基可進一步經取代。醯胺基的碳數並無特別限定,較佳為1以上且20以下的範圍。更具體而言,可列舉:甲基醯胺基、乙基醯胺基、丙基醯胺基、丁基醯胺基、異丙基醯胺基、己基醯胺基、苯基醯胺基等。The amide group means, for example, a functional group formed by bonding an alkyl group, a cycloalkyl group, an aryl group, a heteroaryl group, etc. via an amide bond. These substituents may be further substituted. The carbon number of the amide group is not particularly limited, but is preferably in the range of 1 or more and 20 or less. More specifically, examples include methyl amide, ethyl amide, propyl amide, butyl amide, isopropyl amide, hexyl amide, phenyl amide, etc. .

所謂磺醯基,例如表示烷基、環烷基、芳基、雜芳基等經由-S(=O)2 -鍵鍵結而成的官能基。該些取代基可進一步經取代。磺醯基的碳數並無特別限定,較佳為1以上且20以下的範圍。The sulfonyl group means, for example, a functional group formed by bonding an alkyl group, a cycloalkyl group, an aryl group, a heteroaryl group, etc. via a -S(=O) 2-bond. These substituents may be further substituted. The carbon number of the sulfonyl group is not particularly limited, but is preferably in the range of 1 or more and 20 or less.

所謂磺酸酯基,例如表示烷基、環烷基、芳基、雜芳基等經由磺酸酯鍵鍵結而成的官能基。此處,所謂磺酸酯鍵,是指酯鍵的羰基部、即、-C(=O)-經取代為磺醯基部、即、-S(=O)2 -而成者。另外,該些取代基可進一步經取代。磺酸酯基的碳數並無特別限定,較佳為1以上且20以下的範圍。The sulfonate group means, for example, a functional group formed by bonding an alkyl group, a cycloalkyl group, an aryl group, a heteroaryl group, etc. via a sulfonate ester bond. Here, the sulfonate ester bond refers to a carbonyl part of an ester bond, that is, -C(=O)- is substituted with a sulfonate group, that is, -S(=O) 2 -. In addition, these substituents may be further substituted. The carbon number of the sulfonate group is not particularly limited, but is preferably in the range of 1 or more and 20 or less.

所謂磺醯胺基,例如表示烷基、環烷基、芳基、雜芳基等經由磺醯胺鍵鍵結而成的官能基。此處,所謂磺醯胺鍵,是指酯鍵的羰基部、即、-C(=O)-經取代為磺醯基部、即、-S(=O)2 -而成者。另外,該些取代基可進一步經取代。磺醯胺基的碳數並無特別限定,較佳為1以上且20以下的範圍。The sulfonamide group means, for example, a functional group formed by bonding an alkyl group, a cycloalkyl group, an aryl group, and a heteroaryl group via a sulfonamide bond. Here, the sulfonamide bond refers to a carbonyl part of an ester bond, that is, -C(=O)- is substituted with a sulfonamide, that is, -S(=O) 2 -. In addition, these substituents may be further substituted. The carbon number of the sulfonamide group is not particularly limited, but it is preferably in the range of 1 or more and 20 or less.

所謂胺基,是指經取代或未經取代的胺基。作為進行取代的情況下的取代基,例如可列舉芳基、雜芳基、直鏈烷基、分支烷基。作為芳基、雜芳基,較佳為苯基、萘基、吡啶基、喹啉基。該些取代基可進一步經取代。碳數並無特別限定,較佳為2以上且50以下、更佳為6以上且40以下、尤佳為6以上且30以下的範圍。The so-called amine group refers to a substituted or unsubstituted amine group. Examples of the substituent in the case of substitution include an aryl group, a heteroaryl group, a linear alkyl group, and a branched alkyl group. As an aryl group and a heteroaryl group, a phenyl group, a naphthyl group, a pyridyl group, and a quinolinyl group are preferable. These substituents may be further substituted. The carbon number is not particularly limited, but is preferably 2 or more and 50 or less, more preferably 6 or more and 40 or less, and particularly preferably 6 or more and 30 or less.

所謂矽烷基,表示鍵結有經取代或未經取代的矽原子的官能基,例如表示三甲基矽烷基、三乙基矽烷基、第三丁基二甲基矽烷基、丙基二甲基矽烷基、乙烯基二甲基矽烷基等烷基矽烷基;或苯基二甲基矽烷基、第三丁基二苯基矽烷基、三苯基矽烷基、三萘基矽烷基等芳基矽烷基。矽上的取代基可進一步經取代。矽烷基的碳數並無特別限定,較佳為1以上且30以下的範圍。The so-called silyl group refers to a functional group bonded with substituted or unsubstituted silicon atoms, such as trimethylsilyl group, triethylsilyl group, tertiary butyldimethylsilyl group, and propyldimethylsilyl group. Alkyl silyl groups such as silyl group and vinyl dimethyl silyl group; or aryl silyl groups such as phenyl dimethyl silyl group, tertiary butyl diphenyl silyl group, triphenyl silyl group, trinaphthyl silyl group, etc. base. Substituents on silicon can be further substituted. The carbon number of the silyl group is not particularly limited, but is preferably in the range of 1 or more and 30 or less.

所謂矽氧烷基,例如表示三甲基矽氧烷基等經由醚鍵的矽化合物基。矽上的取代基可進一步經取代。The siloxyalkyl group means, for example, a silicon compound group such as a trimethylsiloxyalkyl group via an ether bond. Substituents on silicon can be further substituted.

所謂氧硼基,是指經取代或未經取代的氧硼基。作為進行取代的情況下的取代基,例如可列舉芳基、雜芳基、直鏈烷基、分支烷基、芳基醚基、烷氧基、羥基,其中較佳為芳基、芳基醚基。The oxyboron group refers to a substituted or unsubstituted oxyboron group. Examples of substituents in the case of substitution include aryl groups, heteroaryl groups, linear alkyl groups, branched alkyl groups, aryl ether groups, alkoxy groups, and hydroxyl groups. Among them, aryl groups and aryl ether groups are preferred. base.

所謂氧化膦基,是指-P(=O)R50 R51 所表示的基。R50 及R51 分別獨立地選自與R1 ~R6 相同的群組中。The phosphine oxide group means a group represented by -P(=O)R 50 R 51. R 50 and R 51 are each independently selected from the same group as R 1 to R 6.

吡咯亞甲基硼錯合物由於具有牢固且平面性高的骨架,因此顯示出高螢光量子產率。另外,發光光譜的峰值半值寬度小,因此於發光元件中可達成有效率的發光與高顏色純度。Since the pyrromethene boron complex has a strong and highly planar skeleton, it exhibits a high fluorescence quantum yield. In addition, the peak half-value width of the emission spectrum is small, so efficient light emission and high color purity can be achieved in the light-emitting element.

為了進一步提高發光效率,有效的是抑制吡咯亞甲基硼錯合物的取代基的旋轉、振動,減少能量損失,並提高螢光量子產率。另外,為了提高顏色純度,有效的是減少吡咯亞甲基硼錯合物的激發狀態下的振動弛豫,減少發光光譜的半值寬度。In order to further improve the luminous efficiency, it is effective to suppress the rotation and vibration of the substituent of the pyrromethene boron complex, reduce energy loss, and increase the fluorescence quantum yield. In addition, in order to improve the color purity, it is effective to reduce the vibrational relaxation in the excited state of the pyrromethene boron complex, and to reduce the half-value width of the emission spectrum.

就該觀點而言,取代基R7 被導入至吡咯亞甲基骨架的橋頭位。藉由導入R7 ,可提供螢光量子產率高且半值寬度小的吡咯亞甲基硼錯合物。其中,取代基R7 中,藉由Ar1 及R11 分別為所述基,可抑制橋頭位相對於吡咯亞甲基骨架發生分子內旋轉而引起能量失活,因此有利於提高發光效率。From this viewpoint, the substituent R 7 is introduced to the bridgehead position of the pyrromethene skeleton. By introducing R 7 , a pyrromethene boron complex with high fluorescence quantum yield and small half-value width can be provided. Among them, in the substituent R 7 , Ar 1 and R 11 are each the above-mentioned groups, which can suppress the intramolecular rotation of the bridgehead position with respect to the pyrromethene skeleton to cause energy inactivation, thereby contributing to the improvement of luminous efficiency.

另外,藉由R1 ~R4 中的至少一個為氫原子或烷基,可減少激發狀態下的振動弛豫,減少發光光譜的半值寬度。In addition, since at least one of R 1 to R 4 is a hydrogen atom or an alkyl group, vibration relaxation in the excited state can be reduced, and the half-value width of the emission spectrum can be reduced.

另外,吡咯亞甲基硼錯合物的穩定性影響發光元件的耐久性。為了進一步提高其穩定性,較佳為於橋頭位導入體積大的取代基。藉由導入體積大的取代基,可保護吡咯亞甲基骨架免受與周圍其他分子的相互作用。藉由取代基R7 中,Ar1 及R11 分別為所述基,可提高吡咯亞甲基硼錯合物的穩定性,提高發光元件的耐久性。就該觀點而言,R11 較佳為體積更大的取代基,較佳為經取代或未經取代的芳基、或者經取代或未經取代的雜芳基。In addition, the stability of the pyrromethene boron complex affects the durability of the light-emitting element. In order to further improve its stability, it is preferable to introduce bulky substituents at the bridgehead position. By introducing bulky substituents, the pyrromethene skeleton can be protected from interaction with other surrounding molecules. When Ar 1 and R 11 are the above-mentioned groups in the substituent R 7 , the stability of the pyrromethene boron complex can be improved, and the durability of the light-emitting device can be improved. From this viewpoint, R 11 is preferably a bulkier substituent, preferably a substituted or unsubstituted aryl group, or a substituted or unsubstituted heteroaryl group.

R1 及R4 選自所述群組中,影響吡咯亞甲基硼錯合物的發光峰值波長、結晶性、昇華溫度等。就進一步減小發光光譜的半值寬度的觀點而言,R1 及R4 較佳為氫原子或烷基。進而,就進一步提高螢光量子產率的觀點而言,R1 及R4 更佳為烷基。R 1 and R 4 are selected from the group and affect the emission peak wavelength, crystallinity, sublimation temperature, etc. of the pyrromethene boron complex. From the viewpoint of further reducing the half-value width of the emission spectrum, R 1 and R 4 are preferably hydrogen atoms or alkyl groups. Furthermore, from the viewpoint of further improving the fluorescence quantum yield, R 1 and R 4 are more preferably alkyl groups.

R2 及R3 選自所述群組中,主要影響吡咯亞甲基硼錯合物的發光峰值波長、發光光譜的半值寬度、穩定性或結晶性。就進一步減小發光光譜的半值寬度的觀點、進一步提高穩定性的觀點、以及包括再結晶生成在內的合成的容易性的觀點而言,R2 及R3 中的至少一者、較佳為兩者較佳的是選自由氫原子、經取代或未經取代的烷基、經取代或未經取代的芳基以及經取代或未經取代的雜芳基所組成的群組中的基。進而,就進一步減少半值寬度的觀點而言,R2 及R3 更佳為烷基。R 2 and R 3 are selected from the group, and mainly affect the emission peak wavelength of the pyrromethene boron complex, the half-value width of the emission spectrum, the stability or the crystallinity. From the viewpoint of further reducing the half-value width of the emission spectrum, the viewpoint of further improving the stability, and the viewpoint of the ease of synthesis including the formation of recrystallization, at least one of R 2 and R 3 is preferably Preferred for both is a group selected from the group consisting of a hydrogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted aryl group, and a substituted or unsubstituted heteroaryl group. . Furthermore, from the viewpoint of further reducing the half-value width, R 2 and R 3 are more preferably alkyl groups.

R5 及R6 選自所述群組中,主要影響吡咯亞甲基硼錯合物的發光峰值波長、發光光譜的半值寬度、穩定性或結晶性。就進一步減小發光光譜的半值寬度的觀點、進一步提高穩定性的觀點、以及包括再結晶精製在內的合成的容易性的觀點而言,R5 及R6 中的至少一者、較佳為兩者較佳的是氫原子、或者經取代或未經取代的烷基。R 5 and R 6 are selected from the group, and mainly affect the emission peak wavelength of the pyrromethene boron complex, the half-value width of the emission spectrum, the stability or the crystallinity. From the viewpoint of further reducing the half-value width of the emission spectrum, the viewpoint of further improving the stability, and the viewpoint of the ease of synthesis including recrystallization and purification, at least one of R 5 and R 6 is preferably Preferred for both is a hydrogen atom, or a substituted or unsubstituted alkyl group.

X1 及X2 選自所述群組中。就發光特性與熱穩定性的觀點而言,X1 及X2 較佳為選自由烷氧基、鹵代烷基、鹵代烷氧基、芳基醚基、鹵代芳基醚基、鹵代芳基、鹵素原子及氰基所組成的群組中的基。此處,所謂鹵代烷基,是指經至少一個鹵素取代的烷基。所謂鹵代芳基,是指經至少一個鹵素取代的芳基。X 1 and X 2 are selected from the group. From the viewpoint of luminescence characteristics and thermal stability, X 1 and X 2 are preferably selected from the group consisting of alkoxy, halogenated alkyl, halogenated alkoxy, aryl ether group, halogenated aryl ether group, halogenated aryl group, A group in the group consisting of a halogen atom and a cyano group. Here, the term "haloalkyl" refers to an alkyl group substituted with at least one halogen. The so-called halogenated aryl group refers to an aryl group substituted with at least one halogen.

另外,就激發狀態穩定且可獲得更高的螢光量子產率的觀點以及可提高耐久性的觀點而言,X1 及X2 更佳為選自由氟原子、含氟烷基、含氟烷氧基、含氟芳基及氰基所組成的群組中的基,進而佳為氟原子或氰基,最佳為氟原子。該些為拉電子性基,可降低吡咯亞甲基骨架的電子密度,增加化合物的穩定性。 In addition, X 1 and X 2 are more preferably selected from the group consisting of fluorine atoms, fluorine-containing alkyl groups, and fluorine-containing alkoxy groups from the viewpoint of stable excited state and higher fluorescence quantum yield and the viewpoint that durability can be improved. The group in the group consisting of a fluorine-containing aryl group and a cyano group is more preferably a fluorine atom or a cyano group, and most preferably a fluorine atom. These are electron withdrawing groups, which can reduce the electron density of the pyrromethene skeleton and increase the stability of the compound.

以下示出通式(1)所表示的吡咯亞甲基硼錯合物的一例,但並不限定於該些。An example of the pyrromethene boron complex compound represented by General formula (1) is shown below, but it is not limited to these.

[化6]

Figure 02_image016
[化6]
Figure 02_image016

[化7]

Figure 02_image018
[化7]
Figure 02_image018

[化8]

Figure 02_image020
[化8]
Figure 02_image020

[化9]

Figure 02_image022
[化9]
Figure 02_image022

[化10]

Figure 02_image024
[化10]
Figure 02_image024

[化11]

Figure 02_image026
[化11]
Figure 02_image026

[化12]

Figure 02_image028
[化12]
Figure 02_image028

[化13]

Figure 02_image030
[化13]
Figure 02_image030

[化14]

Figure 02_image032
[化14]
Figure 02_image032

[化15]

Figure 02_image034
[化15]
Figure 02_image034

[化16]

Figure 02_image036
[化16]
Figure 02_image036

[化17]

Figure 02_image038
[化17]
Figure 02_image038

[化18]

Figure 02_image040
[化18]
Figure 02_image040

[化19]

Figure 02_image042
[化19]
Figure 02_image042

[化20]

Figure 02_image044
[化20]
Figure 02_image044

[化21]

Figure 02_image046
[化21]
Figure 02_image046

通式(1)所表示的吡咯亞甲基硼錯合物可參考「有機化學期刊(J. Org. Chem.)」(vol. 64, No. 21, 第7813頁-第7819頁(1999))、「應用化學英文國際版(Angew. Chem., Int. Ed. Engl.)」(vol. 36, 第1333頁-第1335頁(1997))、「有機快報(Org. Lett.)」(vol. 12, 第296頁(2010))等中所記載的方法來製造。For the pyrromethene boron complex represented by the general formula (1), please refer to "Journal of Organic Chemistry (J. Org. Chem.)" (vol. 64, No. 21, page 7813-page 7819 (1999)) ), "Angew. Chem., Int. Ed. Engl." (vol. 36, p. 1333-p. 1335 (1997)), "Org. Lett." ( vol. 12, page 296 (2010)).

進而,為了向吡咯亞甲基骨架中導入芳基或雜芳基,例如可列舉於鈀等金屬觸媒下使用吡咯亞甲基硼錯合物的鹵化衍生物與硼酸或硼酸酯衍生物的偶合反應而生成碳-碳鍵的方法,但並不限定於此。同樣地,為了向吡咯亞甲基骨架中導入胺基或咔唑基,例如可列舉於鈀等金屬觸媒下使用吡咯亞甲基硼錯合物的鹵化衍生物與胺或咔唑衍生物的偶合反應而生成碳-氮鍵的方法,但並不限定於此。Furthermore, in order to introduce an aryl group or a heteroaryl group into the pyrromethene skeleton, for example, the use of a halogenated derivative of a pyrromethene boron complex and a boric acid or boronic acid ester derivative under a metal catalyst such as palladium can be mentioned. The method of coupling reaction to form carbon-carbon bond is not limited to this. Similarly, in order to introduce an amine group or a carbazole group into the pyrromethene skeleton, for example, a halogenated derivative of a pyrromethene boron complex and an amine or carbazole derivative are used under a metal catalyst such as palladium. The method of coupling reaction to form a carbon-nitrogen bond is not limited to this.

所得的吡咯亞甲基硼錯合物較佳為於進行再結晶或管柱層析等有機合成精製後,進一步藉由一般被稱為昇華精製的利用減壓加熱進行的精製來去除低沸點成分,提高純度。昇華精製中的加熱溫度並無特別限定,就防止吡咯亞甲基硼錯合物的熱分解的觀點而言,較佳為330℃以下,更佳為300℃以下。The obtained pyrromethene boron complex is preferably purified by organic synthesis such as recrystallization or column chromatography, and then further purified by heating under reduced pressure, which is generally called sublimation purification, to remove low-boiling components. , Improve purity. The heating temperature in the sublimation purification is not particularly limited, but from the viewpoint of preventing thermal decomposition of the pyrromethene boron complex, it is preferably 330°C or lower, and more preferably 300°C or lower.

就發光元件可顯示出穩定的特性的觀點而言,以所述方式製造的吡咯亞甲基硼錯合物的純度較佳為99重量%以上。From the viewpoint that the light-emitting element can exhibit stable characteristics, the purity of the pyrromethene boron complex produced in the above manner is preferably 99% by weight or more.

通式(1)所表示的吡咯亞甲基硼錯合物的光學特性可藉由測定稀釋溶液的吸收光譜及發光光譜而獲得。作為溶媒,只要是溶解吡咯亞甲基硼錯合物且溶媒的吸收光譜與吡咯亞甲基硼錯合物的吸收光譜不重疊的透明溶媒,則並無特別限定。具體而言,可例示甲苯等。溶液的濃度若為具有充分的吸光度且不發生濃度淬滅的濃度範圍內,則並無特別限定,較佳為1×10-4 mol/L~1×10-7 mol/L的範圍,更佳為1×10-5 mol/L~1×10-6 mol/L的範圍。吸收光譜可藉由一般的紫外可見分光光度計測定。另外,發光光譜可藉由一般的螢光分光光度計測定。進而,螢光量子產率的測定較佳為利用使用了積分球的絕對量子產率測定裝置。The optical properties of the pyrromethene boron complex represented by the general formula (1) can be obtained by measuring the absorption spectrum and the emission spectrum of the diluted solution. The solvent is not particularly limited as long as it is a transparent solvent that dissolves the pyrromethene boron complex and the absorption spectrum of the solvent does not overlap the absorption spectrum of the pyrromethene boron complex. Specifically, toluene and the like can be exemplified. The concentration of the solution is not particularly limited as long as it has sufficient absorbance and does not undergo concentration quenching. It is preferably in the range of 1×10 -4 mol/L to 1×10 -7 mol/L, and more It is preferably in the range of 1×10 -5 mol/L to 1×10 -6 mol/L. The absorption spectrum can be measured by a general ultraviolet-visible spectrophotometer. In addition, the emission spectrum can be measured by a general fluorescent spectrophotometer. Furthermore, for the measurement of the fluorescence quantum yield, it is preferable to use an absolute quantum yield measuring device using an integrating sphere.

為了實現高顏色純度,通式(1)所表示的吡咯亞甲基硼錯合物藉由激發光的照射而發出的光的發光光譜較佳為尖銳。另外,於顯示裝置或照明裝置中成為主流的頂部發光元件中,藉由微腔(microcavity)結構所帶來的共振效果,可達成高亮度及高顏色純度,若發光光譜尖銳,則更強烈地表現出該共振效果,有利於高效率化。就該觀點而言,發光光譜的半值寬度較佳為60 nm以下,更佳為50 nm以下,進而佳為45 nm以下,尤佳為28 nm以下。In order to achieve high color purity, the pyrromethene boron complex represented by the general formula (1) preferably has a sharp emission spectrum of light emitted by irradiation with excitation light. In addition, in display devices or lighting devices that have become the mainstream of top-emitting devices, the resonance effect brought by the microcavity structure can achieve high brightness and high color purity. If the emission spectrum is sharp, it will be more intense. Exhibiting this resonance effect contributes to high efficiency. From this viewpoint, the half-value width of the emission spectrum is preferably 60 nm or less, more preferably 50 nm or less, still more preferably 45 nm or less, and particularly preferably 28 nm or less.

發光元件的發光效率依賴於發光材料自身的螢光量子產率。因此,發光材料的螢光量子產率理想的是盡可能接近100%。關於通式(1)所表示的吡咯亞甲基硼錯合物,藉由R11 及Ar1 為如上所述,抑制橋頭位的旋轉、振動,減少熱失活,藉此可獲得高螢光量子產率。就以上觀點而言,吡咯亞甲基硼錯合物的螢光量子產率較佳為90%以上,更佳為95%以上。其中,此處所示的螢光量子產率是利用絕對量子產率測定裝置測定以甲苯為溶媒的稀釋溶液而得者。The luminous efficiency of a light-emitting element depends on the fluorescence quantum yield of the light-emitting material itself. Therefore, the fluorescence quantum yield of the luminescent material is ideally as close to 100% as possible. Regarding the pyrromethene boron complex represented by the general formula (1), R 11 and Ar 1 are as described above to suppress the rotation and vibration of the bridgehead position and reduce thermal deactivation, thereby obtaining high fluorescence quantum Yield. From the above viewpoints, the fluorescence quantum yield of the pyrromethene boron complex is preferably 90% or more, more preferably 95% or more. Among them, the fluorescence quantum yield shown here is obtained by measuring a diluted solution using toluene as a solvent with an absolute quantum yield measuring device.

<發光元件材料> 通式(1)所表示的吡咯亞甲基硼錯合物可達成高發光效率,因此於發光元件中可用作發光元件材料。此處,所謂本發明中的發光元件材料表示發光元件的任一層中使用的材料,如後述般,除了為選自電洞注入層、電洞傳輸層、發光層及電子傳輸層中的層中使用的材料以外,亦包括電極的保護膜層(覆蓋層)中使用的材料。<Light-emitting device materials> The pyrromethene boron complex represented by the general formula (1) can achieve high luminous efficiency, and therefore can be used as a light-emitting device material in a light-emitting device. Here, the light-emitting element material in the present invention means a material used in any layer of the light-emitting element, except for the layer selected from the group consisting of a hole injection layer, a hole transport layer, a light emitting layer, and an electron transport layer, as described later. In addition to the materials used, materials used in the protective film layer (covering layer) of the electrode are also included.

通式(1)所表示的吡咯亞甲基硼錯合物具有高發光性能,因此較佳為發光層中使用的材料。The pyrromethene boron complex represented by the general formula (1) has high light-emitting performance, and therefore is preferably a material used in the light-emitting layer.

<發光元件> 其次,對本發明的發光元件的實施形態進行說明。本發明的發光元件具有陽極與陰極、以及存在於該陽極與該陰極之間的有機層。該有機層至少包含發光層,該發光層較佳為藉由電能來發光的有機電場發光元件。<Light-emitting components> Next, an embodiment of the light-emitting element of the present invention will be described. The light-emitting element of the present invention has an anode and a cathode, and an organic layer existing between the anode and the cathode. The organic layer includes at least a light-emitting layer, and the light-emitting layer is preferably an organic electroluminescence element that emits light by electric energy.

本發明的發光元件可為底部發光型或頂部發光型中的任一種。The light-emitting element of the present invention may be either a bottom emission type or a top emission type.

此種發光元件中的陽極與陰極之間的有機層的層結構除了僅包含發光層的結構以外,可列舉如1)發光層/電子傳輸層、2)電洞傳輸層/發光層、3)電洞傳輸層/發光層/電子傳輸層、4)電洞注入層/電洞傳輸層/發光層/電子傳輸層、5)電洞傳輸層/發光層/電子傳輸層/電子注入層、6)電洞注入層/電洞傳輸層/發光層/電子傳輸層/電子注入層、7)電洞注入層/電洞傳輸層/發光層/電洞阻擋層/電子傳輸層/電子注入層、8)電洞注入層/電洞傳輸層/電子阻擋層/發光層/電洞阻擋層/電子傳輸層/電子注入層般的積層結構。The layer structure of the organic layer between the anode and the cathode in this light-emitting element includes, in addition to the structure containing only the light-emitting layer, such as 1) light-emitting layer/electron transport layer, 2) hole transport layer/light-emitting layer, 3) Hole transport layer/light emitting layer/electron transport layer, 4) hole injection layer/hole transport layer/light emitting layer/electron transport layer, 5) hole transport layer/light emitting layer/electron transport layer/electron injection layer, 6 ) Hole injection layer / hole transport layer / light emitting layer / electron transport layer / electron injection layer, 7) hole injection layer / hole transport layer / light emitting layer / hole blocking layer / electron transport layer / electron injection layer, 8) Hole injection layer/hole transport layer/electron blocking layer/light emitting layer/hole blocking layer/electron transport layer/electron injection layer-like laminated structure.

進而,亦可為經由中間層而將多個所述積層結構積層而成的串聯(tandem)型的發光元件。作為中間層,一般可列舉中間電極、中間導電層、電荷產生層、電子汲取層、連接層、中間絕緣層等,可使用公知的材料結構。作為串聯型發光元件的較佳的具體例,可列舉如9)電洞注入層/電洞傳輸層/發光層/電子傳輸層/電子注入層/電荷產生層/電洞注入層/電洞傳輸層/發光層/電子傳輸層/電子注入層般的積層結構。Furthermore, it may be a tandem type light-emitting element in which a plurality of the above-mentioned laminated structures are laminated via an intermediate layer. As the intermediate layer, generally, an intermediate electrode, an intermediate conductive layer, a charge generation layer, an electron draw layer, a connection layer, an intermediate insulating layer, etc. can be cited, and a known material structure can be used. As a preferable specific example of the tandem light-emitting element, such as 9) hole injection layer/hole transport layer/light emitting layer/electron transport layer/electron injection layer/charge generation layer/hole injection layer/hole transport Layer/light-emitting layer/electron transport layer/electron injection layer-like laminated structure.

另外,所述各層可分別為單一層、多層的任一種,亦可摻雜。進而,亦可列舉如下的元件結構,所述元件結構包括使用了覆蓋材料的層,所述覆蓋材料用來實現因光學干涉效果而使發光效率提高。In addition, each of the layers can be either a single layer or multiple layers, and can also be doped. Furthermore, the following element structure can also be cited, and the element structure includes a layer using a covering material for achieving an increase in luminous efficiency due to an optical interference effect.

通式(1)所表示的吡咯亞甲基硼錯合物於所述元件結構中可用於任一層,但由於螢光量子產率高且具有薄膜穩定性,因此較佳為用於發光層中。The pyrromethene boron complex represented by the general formula (1) can be used in any layer in the device structure, but it is preferably used in the light-emitting layer due to the high fluorescence quantum yield and thin film stability.

以下列舉發光元件的結構的具體例,但本發明的結構並不限定於該些。Specific examples of the structure of the light-emitting element are listed below, but the structure of the present invention is not limited to these.

(基板) 為了保持發光元件的機械強度,使熱變形少,且具有防止水蒸氣或氧侵入發光層的阻隔性,較佳為於基板上形成發光元件。作為基板,並無特別限定,例如可列舉玻璃板、陶瓷板、樹脂製膜、樹脂薄膜、金屬製薄板等。其中,就透明且容易加工的觀點而言,可較佳地使用玻璃基板。特別是於經過基板輸出光的底部發光元件中,較佳為具有高透明性的玻璃基板。另外,於智慧型手機等移動設備中增加了可撓性顯示器或折疊式顯示器,於所述用途中,可較佳地使用樹脂製膜或使清漆硬化後的樹脂薄膜。作為樹脂製薄膜,可使用耐熱膜,具體而言,可例示聚醯亞胺膜、聚萘二甲酸乙二酯膜等。(Substrate) In order to maintain the mechanical strength of the light-emitting element, reduce thermal deformation, and have barrier properties to prevent water vapor or oxygen from entering the light-emitting layer, it is preferable to form the light-emitting element on a substrate. The substrate is not particularly limited, and examples thereof include glass plates, ceramic plates, resin films, resin films, and metal thin plates. Among them, a glass substrate can be preferably used from the viewpoint of transparency and ease of processing. In particular, in bottom light emitting devices that output light through a substrate, a glass substrate with high transparency is preferred. In addition, flexible displays or foldable displays have been added to mobile devices such as smartphones. For the purposes described above, a resin film or a resin film obtained by hardening a varnish can be preferably used. As the resin film, a heat-resistant film can be used. Specifically, a polyimide film, a polyethylene naphthalate film, and the like can be exemplified.

另外,亦可於基板的表面設置用於驅動有機EL的各種配線、電路以及基於TFT的開關元件。In addition, various wirings, circuits, and TFT-based switching elements for driving the organic EL may be provided on the surface of the substrate.

(陽極) 陽極形成於所述基板上。此處,亦可於基板與陽極之間介隔存在有各種配線、電路及開關元件。陽極中所使用的材料只要為可將電洞效率良好地注入至有機層中的材料,則並無特別限定,於底部發光型的元件中較佳為透明或半透明電極,於頂部發光型的元件中較佳為反射電極。(anode) The anode is formed on the substrate. Here, various wirings, circuits, and switching elements may be interposed between the substrate and the anode. The material used in the anode is not particularly limited as long as it can efficiently inject holes into the organic layer. In bottom-emission type devices, transparent or semi-transparent electrodes are preferred. The reflective electrode is preferable in the element.

作為透明或半透明電極的材料,可例示氧化鋅、氧化錫、氧化銦、氧化銦錫(Indium Tin Oxide,ITO)、氧化銦鋅(Indium Zinc Oxide,IZO)等導電性金屬氧化物;或者金、銀、鋁、鉻等金屬;聚噻吩、聚吡咯、聚苯胺等導電性聚合物。其中,於使用金屬時,較佳為使膜厚變薄,以便可使光半透過。以上中,就透明性與穩定性的觀點而言,更佳為氧化銦錫(ITO)。Examples of materials for the transparent or semi-transparent electrode include conductive metal oxides such as zinc oxide, tin oxide, indium oxide, indium tin oxide (ITO), and indium zinc oxide (IZO); or gold , Silver, aluminum, chromium and other metals; conductive polymers such as polythiophene, polypyrrole, and polyaniline. Among them, when metal is used, it is preferable to make the film thickness thin so that light can be semi-transmitted. Among the above, from the viewpoint of transparency and stability, indium tin oxide (ITO) is more preferable.

作為反射電極的材料,較佳為對所有的光無吸收而具有高反射率的材料。具體而言,可例示鋁、銀、鉑等金屬。As the material of the reflective electrode, a material that does not absorb all light and has a high reflectance is preferable. Specifically, metals such as aluminum, silver, and platinum can be exemplified.

陽極的形成方法可根據其形成材料採用最佳的方法,可列舉濺鍍法、蒸鍍法、噴墨法等。例如,於由金屬氧化物形成陽極的情況下可使用濺鍍法,於由金屬形成陽極的情況下可使用蒸鍍法。陽極的膜厚並無特別限定,較佳為數nm~數百nm。The method of forming the anode can be optimized according to its forming material, and examples thereof include a sputtering method, a vapor deposition method, and an inkjet method. For example, when the anode is formed of a metal oxide, a sputtering method can be used, and when the anode is formed of a metal, a vapor deposition method can be used. The thickness of the anode is not particularly limited, but it is preferably several nm to several hundreds of nm.

另外,該些電極材料可單獨使用,但亦可將多種材料積層或混合來使用。In addition, these electrode materials may be used alone, but multiple materials may be laminated or mixed for use.

(陰極) 陰極夾著有機層而形成於陽極的相反側的表面,特別是較佳為形成於電子傳輸層或電子注入層上。陰極中所使用的材料只要為可將電子效率良好地注入至發光層中的材料,則並無特別限定,於底部發光型的元件中較佳為反射電極,於頂部發光型的元件中較佳為半透明電極。(cathode) The cathode is formed on the surface on the opposite side of the anode with the organic layer interposed therebetween, and is particularly preferably formed on the electron transport layer or the electron injection layer. The material used in the cathode is not particularly limited as long as it can efficiently inject electrons into the light-emitting layer. It is preferably a reflective electrode in a bottom-emission type device, and more preferably a top-emission type device. It is a translucent electrode.

作為陰極的材料,一般而言,較佳為鉑、金、銀、銅、鐵、錫、鋁、銦等金屬;該些金屬與鋰、鈉、鉀、鈣、鎂等低功函數金屬的合金或多層積層膜;或者氧化鋅、氧化銦錫(ITO)、氧化銦鋅(IZO)等導電性金屬氧化物等。其中,作為主成分,就電阻值、製膜容易度、膜的穩定性、發光效率等方面而言,較佳為選自鋁、銀及鎂中的金屬。另外,若陰極包含鎂與銀,則對本發明中的電子傳輸層及電子注入層的電子注入變得容易,可進行低電壓驅動,因此較佳。As the material of the cathode, in general, metals such as platinum, gold, silver, copper, iron, tin, aluminum, and indium are preferred; alloys of these metals with low work function metals such as lithium, sodium, potassium, calcium, and magnesium Or multilayer laminated film; or conductive metal oxides such as zinc oxide, indium tin oxide (ITO), indium zinc oxide (IZO), etc. Among them, the main component is preferably a metal selected from aluminum, silver, and magnesium in terms of resistance value, ease of film formation, film stability, luminous efficiency, and the like. In addition, if the cathode contains magnesium and silver, the electron injection into the electron transport layer and the electron injection layer in the present invention becomes easy, and low-voltage driving is possible, which is preferable.

(保護層) 為了保護陰極,較佳為於陰極上積層保護層(覆蓋層)。作為構成保護層的材料,並無特別限定,例如可列舉:鉑、金、銀、銅、鐵、錫、鋁及銦等金屬;使用該些金屬的合金;二氧化矽、氧化鈦及氮化矽等無機物;聚乙烯醇、聚氯乙烯、烴系高分子化合物等有機高分子化合物等。其中,於發光元件為自陰極側輸出光的元件結構(頂部發光結構)的情況下,保護層中所使用的材料選自於可見光區域具有透光性的材料中。(The protective layer) In order to protect the cathode, it is preferable to laminate a protective layer (covering layer) on the cathode. The material constituting the protective layer is not particularly limited, and examples include metals such as platinum, gold, silver, copper, iron, tin, aluminum, and indium; alloys using these metals; silicon dioxide, titanium oxide, and nitride Inorganic materials such as silicon; organic polymer compounds such as polyvinyl alcohol, polyvinyl chloride, and hydrocarbon-based polymer compounds. Wherein, in the case where the light-emitting element has an element structure (top emission structure) that outputs light from the cathode side, the material used in the protective layer is selected from materials that have translucency in the visible light region.

(電洞注入層) 電洞注入層是插入至陽極與電洞傳輸層之間而使電洞注入容易的層。電洞注入層可為一層,亦可將多層積層。若於電洞傳輸層與陽極之間存在電洞注入層,則可實現更低的電壓驅動,元件的耐久壽命亦提高,不僅如此,進而元件的載子平衡提高,發光效率亦提高,因此較佳。(Hole injection layer) The hole injection layer is a layer that is inserted between the anode and the hole transport layer to facilitate hole injection. The hole injection layer can be one layer or multiple layers. If there is a hole injection layer between the hole transport layer and the anode, lower voltage driving can be achieved, and the endurance life of the device is also improved. Not only that, the carrier balance of the device is improved, and the luminous efficiency is also improved. good.

作為電洞注入材料的較佳的一例,可列舉供電子性電洞注入材料(施體材料)。該些材料由於最高佔用分子軌道(Highest Occupied Molecular Orbital,HOMO)能級比電洞傳輸層淺,且接近陽極的功函數,因此是可減小與陽極的能量障壁的材料。具體而言,可例示:聯苯胺衍生物、4,4',4"-三(3-甲基苯基(苯基)胺基)三苯基胺(4,4',4"-tris(3-methylphenyl(phenyl)amino)triphenylamine,m-MTDATA)、4,4',4"-三(1-萘基(苯基)胺基)三苯基胺(4,4',4"-tris(1-naphthyl(phenyl)amino)triphenylamine,1-TNATA)等星爆狀(starburst)芳基胺等芳香族胺系材料群組;咔唑衍生物、吡唑啉衍生物、二苯乙烯系化合物、腙系化合物、苯並呋喃衍生物、噻吩衍生物、噁二唑衍生物、酞菁衍生物、卟呤衍生物等雜環化合物;聚合物系中於側鏈具有所述單量體的聚碳酸酯或苯乙烯衍生物、如聚-3,4-伸乙二氧基噻吩(Poly-3,4- Ethylenedioxythiophene,PEDOT)/聚苯硫醚(Polyphenylene sulfide,PPS)般的聚噻吩、聚苯胺、聚芴、聚乙烯基咔唑及聚矽烷等。該些材料可單獨使用,亦可混合使用兩種以上的材料。另外,亦可積層多種材料而作為電洞注入層。As a preferable example of the hole injection material, an electron donating hole injection material (donor material) can be cited. These materials are materials that can reduce the energy barrier with the anode because the energy level of the Highest Occupied Molecular Orbital (HOMO) is shallower than that of the hole transport layer and close to the work function of the anode. Specifically, examples include benzidine derivatives, 4,4',4"-tris(3-methylphenyl(phenyl)amino)triphenylamine (4,4',4"-tris( 3-methylphenyl(phenyl)amino)triphenylamine, m-MTDATA), 4,4',4"-tris(1-naphthyl(phenyl)amino)triphenylamine (4,4',4"-tris (1-naphthyl(phenyl)amino)triphenylamine, 1-TNATA) and other aromatic amine-based materials such as starburst arylamines; carbazole derivatives, pyrazoline derivatives, and stilbene-based compounds , Hydrazone compounds, benzofuran derivatives, thiophene derivatives, oxadiazole derivatives, phthalocyanine derivatives, porin derivatives and other heterocyclic compounds; in the polymer system, the side chain has the monomer Carbonate or styrene derivatives, such as poly-3,4-Ethylenedioxythiophene (PEDOT)/polyphenylene sulfide (PPS) like polythiophene, polyaniline , Polyfluorene, polyvinyl carbazole and polysilane, etc. These materials can be used alone, or two or more materials can be used in combination. In addition, a plurality of materials may be laminated as a hole injection layer.

另外,作為電洞注入材料的另一較佳的一例,可列舉電子接受性電洞注入材料(受體材料)。此處,電洞注入層可由受體材料單獨構成,亦可將受體材料摻雜至所述施體材料中使用。受體材料是如下材料:於單獨使用時在與鄰接的電洞傳輸層之間形成電荷遷移錯合物,另外於摻雜至施體材料中使用時在與施體材料之間形成電荷遷移錯合物。若使用此種材料,則可獲得電洞注入層的導電性提高、以及有助於元件的驅動電壓降低、發光效率的提高、耐久壽命提高等效果,因此更佳。作為受體材料,可例示:如氧化鉬、氧化釩、氧化鎢、氧化釕般的金屬氧化物;如三(4-溴苯基)六氯銻酸銨(Tris(4-bromophenyl)Aminium hexachloroantimonate,TBPAH)般的電荷遷移錯合物;如1,4,5,8,9,11-六氮雜聯三伸苯-六甲腈(1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile,HAT-CN6)、2,3,5,6-四氟-7,7,8,8-四氰基醌二甲烷(2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane,F4-TCNQ)、氟化銅酞菁般的n型有機半導體化合物;富勒烯等。於電洞注入層中包含受體材料的情況下,電洞注入層可為一層,亦可將多個層積層而構成。In addition, as another preferable example of the hole injection material, an electron-accepting hole injection material (acceptor material) can be cited. Here, the hole injection layer may be composed of the acceptor material alone, or the acceptor material may be doped into the donor material for use. The acceptor material is a material that forms a charge transfer complex between the adjacent hole transport layer when used alone, and forms a charge transfer complex between the donor material and the donor material when it is doped into the donor material. Compound. If such a material is used, the conductivity of the hole injection layer can be improved, and the driving voltage of the device can be reduced, the luminous efficiency can be improved, and the endurance life can be improved. Therefore, it is more preferable. As the acceptor material, for example, metal oxides such as molybdenum oxide, vanadium oxide, tungsten oxide, and ruthenium oxide; such as Tris(4-bromophenyl)Aminium hexachloroantimonate, TBPAH)-like charge transfer complex; such as 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile (1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile, HAT-CN6), 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane , F4-TCNQ), n-type organic semiconductor compounds like fluorinated copper phthalocyanine; fullerenes, etc. In the case where the hole injection layer contains an acceptor material, the hole injection layer may be one layer, or a plurality of layers may be laminated.

(電洞傳輸層) 電洞傳輸層是將自陽極注入的電洞傳輸至發光層的層。電洞傳輸層可為一層,亦可將多層積層而構成。(Hole transport layer) The hole transport layer is a layer that transports holes injected from the anode to the light-emitting layer. The hole transport layer may be one layer, or multiple layers may be laminated.

電洞傳輸層由一種電洞傳輸材料單獨形成或者藉由將兩種以上的電洞傳輸材料積層或混合而形成。另外,電洞傳輸材料較佳為電洞注入效率高且效率良好地傳輸所注入的電洞。因此,要求電洞傳輸材料為如下的物質:具有適當的游離電位(ionization potential),而且電洞遷移率大,進而穩定性優異,難以產生成為陷阱的雜質。The hole transport layer is formed by one type of hole transport material alone or by layering or mixing two or more types of hole transport materials. In addition, the hole transport material preferably has high hole injection efficiency and efficiently transmits the injected holes. Therefore, the hole transport material is required to be a substance that has an appropriate ionization potential, has a high hole mobility, and has excellent stability, and it is difficult to generate impurities that become traps.

作為滿足此種條件的物質,並無特別限定,例如可列舉:聯苯胺衍生物、被稱為星爆狀芳基胺的芳香族胺系材料群組;咔唑衍生物、吡唑啉衍生物、二苯乙烯系化合物、腙系化合物、苯並呋喃衍生物、二苯並呋喃衍生物、噻吩衍生物、苯並噻吩衍生物、二苯並噻吩衍生物、芴衍生物、螺芴衍生物、噁二唑衍生物、酞菁衍生物、卟呤衍生物等雜環化合物;聚合物系中於側鏈具有所述單量體的聚碳酸酯或苯乙烯衍生物、聚噻吩、聚苯胺、聚芴、聚乙烯基咔唑及聚矽烷等。The substance that satisfies such conditions is not particularly limited, and examples include: benzidine derivatives, group of aromatic amine materials called starburst arylamines; carbazole derivatives, pyrazoline derivatives , Stilbene-based compounds, hydrazone-based compounds, benzofuran derivatives, dibenzofuran derivatives, thiophene derivatives, benzothiophene derivatives, dibenzothiophene derivatives, fluorene derivatives, spirofluorene derivatives, Heterocyclic compounds such as oxadiazole derivatives, phthalocyanine derivatives, and porin derivatives; polycarbonate or styrene derivatives, polythiophenes, polyanilines, and Fluorene, polyvinyl carbazole and polysiloxane, etc.

(發光層) 發光層是藉由因電洞與電子的再結合而產生的激發能量而發光的層。發光層可由單一的材料構成,就顏色純度的觀點而言,較佳為具有第一化合物、以及顯示出強發光的摻雜劑、即、第二化合物。作為第一化合物,例如可列舉承擔電荷遷移的主體材料、或者熱活化延遲螢光性的化合物作為較佳例。(Light-emitting layer) The light-emitting layer is a layer that emits light by excitation energy generated by the recombination of holes and electrons. The light-emitting layer may be composed of a single material, and from the viewpoint of color purity, it is preferable to have a first compound and a dopant that exhibits strong luminescence, that is, a second compound. As the first compound, for example, a host material that is responsible for charge transfer, or a compound that has thermally activated delayed fluorescence properties can be cited as preferred examples.

通式(1)所表示的吡咯亞甲基硼錯合物具有特別優異的螢光量子產率且發光光譜的半值寬度窄,可達成高顏色純度,因此較佳為作為發光層的摻雜劑、即、第二化合物使用。第二化合物的摻雜量若過多則會發生濃度淬滅現象,因此相對於發光層整體的重量,較佳為20重量%以下,更佳為10重量%以下,進而佳為5重量%以下,最佳為2重量%以下。另外,若摻雜濃度過低,則不易發生充分的能量遷移,因此相對於發光層整體的重量,較佳為0.1重量%以上,更佳為0.5重量%以上。The pyrromethene boron complex represented by the general formula (1) has particularly excellent fluorescence quantum yield and a narrow half-value width of the emission spectrum, which can achieve high color purity, so it is preferably used as a dopant for the light-emitting layer , That is, the second compound is used. If the doping amount of the second compound is too large, concentration quenching will occur. Therefore, relative to the weight of the entire light-emitting layer, it is preferably 20% by weight or less, more preferably 10% by weight or less, and still more preferably 5% by weight or less. The best content is 2% by weight or less. In addition, if the doping concentration is too low, sufficient energy transfer is unlikely to occur, so it is preferably 0.1% by weight or more, and more preferably 0.5% by weight or more with respect to the weight of the entire light-emitting layer.

主體材料無須限定為僅一種化合物,亦可混合使用兩種以上,另外,亦可積層使用。作為主體材料,並無特別限定,可使用萘、芘、蒽、熒蒽等具有縮合芳基環的化合物或其衍生物;N,N'-二萘基-N,N'-二苯基-4,4'-二苯基-1,1'-二胺等芳香族胺衍生物;以三(8-羥基喹啉)鋁(III)為代表的金屬螯合化類咢辛(oxinoid)化合物;二苯乙烯基苯衍生物等雙苯乙烯基衍生物;四苯基丁二烯衍生物,茚衍生物,香豆素衍生物,噁二唑衍生物,吡咯並吡啶衍生物,紫環酮衍生物,吡咯並吡咯衍生物,噻二唑並吡啶衍生物,二苯並呋喃衍生物,咔唑衍生物,吲哚並咔唑衍生物,三嗪衍生物;於聚合物系中,可使用聚苯乙炔衍生物、聚對苯衍生物、聚芴衍生物、聚乙烯基咔唑衍生物、聚噻吩衍生物等。作為主體材料尤佳的是蒽衍生物或稠四苯衍生物。The host material does not need to be limited to only one type of compound, and two or more types may be used in combination, and it may also be used in layers. The host material is not particularly limited, and compounds with condensed aryl rings such as naphthalene, pyrene, anthracene, and fluoranthene or derivatives thereof can be used; N,N'-dinaphthyl-N,N'-diphenyl- Aromatic amine derivatives such as 4,4'-diphenyl-1,1'-diamine; metal chelated oxinoid compounds represented by tris(8-hydroxyquinoline) aluminum (III) ;Distyryl derivatives such as stilbene benzene derivatives; Tetraphenylbutadiene derivatives, indene derivatives, coumarin derivatives, oxadiazole derivatives, pyrrolopyridine derivatives, percyclic ketones Derivatives, pyrrolopyrrole derivatives, thiadiazolopyridine derivatives, dibenzofuran derivatives, carbazole derivatives, indolocarbazole derivatives, triazine derivatives; can be used in polymer systems Polyphenylene acetylene derivatives, polyparaphenylene derivatives, polyfluorene derivatives, polyvinylcarbazole derivatives, polythiophene derivatives, and the like. Particularly preferred as the host material are anthracene derivatives or fused tetrabenzene derivatives.

摻雜劑材料並無特別限定,亦可包含通式(1)所表示的吡咯亞甲基硼錯合物以外的螢光發光材料。具體而言,可列舉:萘、芘、蒽、熒蒽等具有縮合芳基環的化合物或其衍生物;具有雜芳基環的化合物或其衍生物;二苯乙烯基苯衍生物、胺基苯乙烯基衍生物、四苯基丁二烯衍生物、二苯乙烯衍生物、醛連氮衍生物、吡咯亞甲基衍生物、二酮吡咯並[3,4-c]吡咯衍生物、香豆素衍生物、唑衍生物及其金屬錯合物、以及芳香族胺衍生物等。The dopant material is not particularly limited, and may include fluorescent materials other than the pyrromethene boron complex represented by the general formula (1). Specifically, examples include: naphthalene, pyrene, anthracene, fluoranthene, and other compounds having condensed aryl rings or derivatives thereof; compounds having heteroaryl rings or derivatives thereof; distyrylbenzene derivatives, amino groups Styryl derivatives, tetraphenylbutadiene derivatives, stilbene derivatives, aldazine derivatives, pyrromethene derivatives, diketopyrrolo[3,4-c]pyrrole derivatives, fragrances Legginin derivatives, azole derivatives and metal complexes, aromatic amine derivatives, etc.

另外,作為摻雜劑材料,亦可包含磷光發光材料。作為進行磷光發光的摻雜劑,較佳為包含選自由銥(Ir)、釕(Ru)、鈀(Pd)、鉑(Pt)、鋨(Os)、及錸(Re)所組成的群組中的至少一種金屬的金屬錯合物化合物,就高效率發光的觀點而言,更佳為銥錯合物或鉑錯合物。配位子較佳為具有苯基吡啶骨架或苯基喹啉骨架或碳烯(carbene)骨架等含氮雜芳基,但並不限定於該些。In addition, as a dopant material, a phosphorescent light-emitting material may also be included. As a dopant for phosphorescent light emission, it is preferable to include a dopant selected from the group consisting of iridium (Ir), ruthenium (Ru), palladium (Pd), platinum (Pt), osmium (Os), and rhenium (Re) The metal complex compound of at least one of the metals is more preferably an iridium complex or a platinum complex from the viewpoint of high-efficiency light emission. The ligand preferably has a nitrogen-containing heteroaryl group such as a phenylpyridine skeleton, a phenylquinoline skeleton, or a carbene skeleton, but is not limited to these.

其中,就提高顏色純度的觀點而言,摻雜劑材料較佳為一種通式(1)所表示的吡咯亞甲基硼錯合物。Among them, from the viewpoint of improving color purity, the dopant material is preferably a pyrromethene boron complex represented by the general formula (1).

發光層中除了所述主體材料或摻雜劑材料以外,亦可進一步包含用以調整發光層內的載子平衡或用以使發光層的層結構穩定化的第三成分。其中,作為第三成分,選擇如於主體材料及摻雜劑材料之間不會發生相互作用的材料。In addition to the host material or dopant material, the light-emitting layer may further include a third component for adjusting the carrier balance in the light-emitting layer or for stabilizing the layer structure of the light-emitting layer. Among them, as the third component, a material that does not interact between the host material and the dopant material is selected.

熱活化延遲螢光性化合物一般亦被稱為TADF材料,其為藉由減小單重態激發狀態的能階與三重態激發狀態的能階之能隙來促進自三重態激發狀態向單重態激發狀態的逆系間交差(inverse intersystem crossing),並提高單重態激子的生成概率的材料。TADF材料中的最低激發單重態能階與最低激發三重態能階的差(設為ΔEST)較佳為0.3 eV以下。藉由利用基於所述TADF機構的延遲螢光,可將理論內部效率提高至100%。進而,於自具有熱活化延遲螢光性的第一化合物的單重態激子向第二化合物的單重態激子發生福斯特(Forster)型能量遷移的情況下,觀測到來自第二化合物的單重態激子的螢光發光。為了發生此種能量遷移,較佳為第一化合物的最低激發單重態能階大於第二化合物的最低激發單重態能階。此處,於第二化合物是具有尖銳的發光光譜的螢光發光材料的情況下,可獲得高效率且高顏色純度的發光元件。如此,若發光層含有熱活化延遲螢光性化合物,則可實現高效率發光,有助於顯示器的低消耗電力化。熱活化延遲螢光性化合物可為藉由單一的材料來顯示出熱活化延遲螢光的化合物,亦可為如形成激發錯合物(exciplex)的情況般藉由多種化合物來顯示出熱活化延遲螢光的化合物。Thermally activated delayed fluorescent compounds are generally called TADF materials, which promote the excitation from the triplet excited state to the singlet state by reducing the energy gap between the energy level of the singlet excited state and the energy level of the triplet excited state A material that increases the probability of singlet exciton generation by inverse intersystem crossing of states. The difference between the lowest excited singlet energy level and the lowest excited triplet energy level (set as ΔEST) in the TADF material is preferably 0.3 eV or less. By using the delayed fluorescence based on the TADF mechanism, the theoretical internal efficiency can be increased to 100%. Furthermore, when the Forster type energy transfer occurs from the singlet excitons of the first compound having thermally activated delayed fluorescence to the singlet excitons of the second compound, the second compound is observed Fluorescence of singlet excitons. In order to cause such energy transfer, it is preferable that the lowest excited singlet energy level of the first compound is greater than the lowest excited singlet energy level of the second compound. Here, in the case where the second compound is a fluorescent light-emitting material having a sharp emission spectrum, a light-emitting element with high efficiency and high color purity can be obtained. In this way, if the light-emitting layer contains a thermally activated delayed fluorescent compound, high-efficiency light emission can be achieved, which contributes to lower power consumption of the display. The thermally activated delayed fluorescence compound can be a compound that exhibits thermally activated delayed fluorescence by a single material, or can be a compound that exhibits thermally activated delayed fluorescence by forming an exciplex (exciplex). Fluorescent compounds.

作為熱活化延遲螢光性化合物,可為單一的化合物,亦可混合使用多種化合物,可使用公知的材料。具體而言,例如可列舉:苯甲腈衍生物、三嗪衍生物、二亞碸衍生物、咔唑衍生物、吲哚並咔唑衍生物、二氫啡嗪衍生物、噻唑衍生物、噁二唑衍生物等。特別是較佳為於同一分子內具有供電子性部(施體部)與拉電子性部(受體部)的化合物。供電子性部(施體部)與拉電子性部可經由單鍵或螺鍵直接鍵結,亦可經由連結基鍵結。作為此種化合物的例子,可列舉含有下述通式(3)所表示的結構的化合物。As the thermally activated delayed fluorescent compound, a single compound may be used, or a plurality of compounds may be mixed and used, and known materials may be used. Specifically, for example, benzonitrile derivatives, triazine derivatives, disulfide derivatives, carbazole derivatives, indolocarbazole derivatives, dihydrophenazine derivatives, thiazole derivatives, oxazol Diazole derivatives and so on. In particular, a compound having an electron donating part (donor part) and an electron withdrawing part (acceptor part) in the same molecule is preferable. The electron donating part (donor part) and the electron withdrawing part may be directly bonded via a single bond or a screw bond, or may be bonded via a connecting base. As an example of such a compound, the compound containing the structure represented by the following general formula (3) is mentioned.

[化22]

Figure 02_image048
[化22]
Figure 02_image048

於所述通式(3)中,A為拉電子性部,B為供電子性部,L為連結基。於存在多個A的情況下,多個A可彼此相同或不同,A彼此可鍵結而形成環結構。於存在多個B的情況下,多個B可彼此相同或不同,B彼此可鍵結而形成環結構。In the general formula (3), A is an electron withdrawing part, B is an electron donating part, and L is a linking group. When there are a plurality of A, the plurality of A may be the same or different from each other, and the A may be bonded to each other to form a ring structure. When there are a plurality of Bs, the plurality of Bs may be the same as or different from each other, and the Bs may be bonded to each other to form a ring structure.

L是選自由直接鍵、或者經取代或未經取代的環形成碳數6~30的芳香族烴基、經取代或未經取代的環形成原子數5~30的雜芳香環基、該些基彼此連結2個~5個而成的基、以及具有氟化烷基的亞甲基所組成的群組中的基。此處,所謂直接鍵,包括單鍵及螺鍵。其中,雜芳香環基中不包括具有供電子性的芳香族胺基或π電子過剩型雜環官能基。L is selected from a direct bond, a substituted or unsubstituted ring forming an aromatic hydrocarbon group having 6 to 30 carbons, a substituted or unsubstituted ring forming a heteroaromatic ring group having 5 to 30 atoms, and these groups A group consisting of two to five groups connected to each other, and a group consisting of a methylene group having a fluorinated alkyl group. Here, the so-called direct key includes single key and screw key. Among them, heteroaromatic ring groups do not include electron-donating aromatic amine groups or π-electron excess heterocyclic functional groups.

a及b分別獨立地為1~5的整數。a and b are each independently an integer of 1-5.

L可於同一分子內存在多個。於存在多個L的情況下,多個L可彼此相同或不同,L彼此可鍵結而形成飽和或不飽和的環。另外,多個L可經由A及/或B而鍵結。於A及/或B以及L分別存在多個的情況下,多個A及/或B可與相同的L鍵結,亦可與不同的L鍵結。There may be more than one L in the same molecule. When there are a plurality of Ls, the plurality of Ls may be the same as or different from each other, and the Ls may be bonded to each other to form a saturated or unsaturated ring. In addition, a plurality of L may be bonded via A and/or B. When there are multiple A and/or B and L respectively, multiple A and/or B may be bonded to the same L, or may be bonded to different L.

此處,所謂供電子性部(施體部),表示相對於鄰接部位而言電子相對豐富的部位。例如可列舉芳香族胺基或π電子過剩型雜環官能基。具體而言,可例示二芳基胺基、咔唑基、苯並咔唑基、二苯並咔唑基、吲哚並咔唑基、二氫吖啶基、啡噁嗪基及二氫啡嗪基及該些基連結多個而成的基等。該些基可進一步經取代,亦可未經取代。作為經取代時的取代基,可列舉所述較佳的取代基的例子。Here, the electron-donating portion (donor portion) refers to a portion where electrons are relatively abundant relative to an adjacent portion. For example, an aromatic amine group or a π-electron-excess type heterocyclic functional group can be mentioned. Specifically, diarylamino, carbazolyl, benzocarbazolyl, dibenzocarbazolyl, indolocarbazolyl, dihydroacridinyl, phenoxazinyl, and dihydromorphine can be exemplified The azinyl group and the group formed by connecting a plurality of these groups and the like. These groups may be further substituted or unsubstituted. As the substituent in the case of substitution, examples of the above-mentioned preferred substituents can be cited.

另外,所謂拉電子性部(受體部),表示相對於鄰接部位而言電子相對缺乏性的部位。例如可列舉拉電子性基或具有拉電子性基作為取代基的苯基或π電子不足型雜環官能基。具體而言,可例示選自羰基、磺醯基、氰基及氟原子中的拉電子性基、或具有拉電子性基作為取代基的苯基、嘧啶基或三嗪基。該些基可進一步經取代,亦可未經取代。作為經取代時的取代基,可列舉所述較佳的取代基的例子。In addition, the electron withdrawing portion (acceptor portion) refers to a portion relatively lacking in electrons relative to an adjacent portion. For example, an electron withdrawing group or a phenyl group having an electron withdrawing group as a substituent, or a π electron-deficient heterocyclic functional group can be cited. Specifically, an electron withdrawing group selected from a carbonyl group, a sulfonyl group, a cyano group, and a fluorine atom, or a phenyl group, a pyrimidinyl group, or a triazinyl group having an electron withdrawing group as a substituent can be exemplified. These groups may be further substituted or unsubstituted. As the substituent in the case of substitution, examples of the above-mentioned preferred substituents can be cited.

作為可用作連結基L的環形成碳數6~30的芳香族烴基,例如可列舉自苯基、聯苯基、三聯苯基、萘基、芴基、苯並芴基、二苯並芴基、菲基、蒽基、苯並菲基、苯並蒽基、䓛基、芘基、熒蒽基、三亞苯基、苯並熒蒽基、二苯並蒽基、苝基、螺旋烴基等芳基中去除氫原子的一部分而成的(a+b)價基。Examples of the ring-forming aromatic hydrocarbon group having 6 to 30 carbons that can be used as the linking group L include phenyl, biphenyl, terphenyl, naphthyl, fluorenyl, benzofluorenyl, and dibenzofluorene. Group, phenanthryl group, anthracenyl group, triphenylphenanthryl group, benzoanthryl group, triphenylene group, pyrenyl group, fluoranthryl group, triphenylene group, benzofluoranthene group, dibenzoanthryl group, perylene group, spiral alkyl group, etc. The (a+b) valence group formed by removing part of the hydrogen atom in the aryl group.

作為可用作連結基L的環形成原子數5~30的雜芳香環基,例如可列舉自吡啶基、呋喃基、苯硫基、喹啉基、異喹啉基、吡嗪基、嘧啶基、噠嗪基、三嗪基、萘啶基、噌啉基、酞嗪基、喹噁啉基、喹唑啉基、苯並呋喃基、苯並苯硫基、吲哚基、二苯並呋喃基、二苯並苯硫基、苯並喹啉基、苯並咪唑基、咪唑並吡啶基、苯並噁唑基、苯並噻唑基、啡啉基等於一個或多個環內具有碳及氫以外的原子、即雜原子的雜芳基中去除一部分的氫而成的(a+b)價環狀芳香族基。作為雜原子,較佳為氮原子、氧原子或硫原子。雜芳香環基可經取代,亦可未經取代。Examples of the ring-forming heteroaromatic ring group having 5 to 30 atoms that can be used as the linking group L include pyridyl, furyl, thiophenyl, quinolyl, isoquinolyl, pyrazinyl, and pyrimidinyl. , Pyridazinyl, triazinyl, naphthyridinyl, cinnolinyl, phthalazinyl, quinoxalinyl, quinazolinyl, benzofuranyl, benzothiol, indolyl, dibenzofuran Group, dibenzothiophenyl, benzoquinolinyl, benzimidazolyl, imidazopyridyl, benzoxazolyl, benzothiazolyl, phenanthroline equal to one or more rings with carbon and hydrogen A (a+b)-valent cyclic aromatic group obtained by removing a part of hydrogen from the heteroaryl group of other atoms, that is, heteroatoms. As the hetero atom, a nitrogen atom, an oxygen atom or a sulfur atom is preferred. The heteroaromatic ring group may be substituted or unsubstituted.

作為此種熱活化延遲螢光性化合物,並無特別限定,可列舉以下例子。It does not specifically limit as such a thermally activated delayed fluorescent compound, The following examples can be mentioned.

[化23]

Figure 02_image050
[化23]
Figure 02_image050

[化24]

Figure 02_image052
[化24]
Figure 02_image052

[化25]

Figure 02_image054
[化25]
Figure 02_image054

[化26]

Figure 02_image056
[化26]
Figure 02_image056

[化27]

Figure 02_image058
[化27]
Figure 02_image058

[化28]

Figure 02_image060
[化28]
Figure 02_image060

[化29]

Figure 02_image062
[化29]
Figure 02_image062

[化30]

Figure 02_image064
[化30]
Figure 02_image064

[化31]

Figure 02_image066
[化31]
Figure 02_image066

[化32]

Figure 02_image068
[化32]
Figure 02_image068

[化33]

Figure 02_image070
[化33]
Figure 02_image070

[化34]

Figure 02_image072
[化34]
Figure 02_image072

[化35]

Figure 02_image074
[化35]
Figure 02_image074

[化36]

Figure 02_image076
[化36]
Figure 02_image076

較佳為所述第一化合物為熱活化延遲螢光性化合物,所述第二化合物為所述通式(1)所表示的吡咯亞甲基硼錯合物。另外,於第一化合物為熱活化延遲螢光性化合物的情況下,較佳為發光層進一步含有單重態能量大於第一化合物的單重態能量的第三化合物。藉此,第三化合物可具有將發光材料的能量封閉在發光層內的功能,可效率良好地發光。另外,亦較佳為第三化合物的最低激發三重態能量大於第一化合物的最低激發三重態能量。Preferably, the first compound is a thermally activated delayed fluorescence compound, and the second compound is a pyrromethene boron complex represented by the general formula (1). In addition, when the first compound is a thermally activated delayed fluorescent compound, it is preferable that the light-emitting layer further contains a third compound having a singlet energy greater than that of the first compound. Thereby, the third compound can have the function of confining the energy of the light-emitting material in the light-emitting layer, and can emit light efficiently. In addition, it is also preferable that the lowest excited triplet energy of the third compound is greater than the lowest excited triplet energy of the first compound.

作為此種第三化合物,較佳為電荷傳輸能力高且玻璃轉移溫度高的有機化合物。作為第三化合物,並無特別限定,可列舉以下例子。As such a third compound, an organic compound having a high charge transport ability and a high glass transition temperature is preferable. The third compound is not particularly limited, and the following examples can be given.

[化37]

Figure 02_image078
[化37]
Figure 02_image078

[化38]

Figure 02_image080
[化38]
Figure 02_image080

[化39]

Figure 02_image082
[化39]
Figure 02_image082

[化40]

Figure 02_image084
[化40]
Figure 02_image084

[化41]

Figure 02_image086
[化41]
Figure 02_image086

[化42]

Figure 02_image088
[化42]
Figure 02_image088

[化43]

Figure 02_image090
[化43]
Figure 02_image090

[化44]

Figure 02_image092
[化44]
Figure 02_image092

[化45]

Figure 02_image094
[化45]
Figure 02_image094

[化46]

Figure 02_image096
[化46]
Figure 02_image096

[化47]

Figure 02_image098
[化47]
Figure 02_image098

另外,第三化合物可由單一材料構成,亦可由兩種以上的材料構成。於使用兩種以上的材料作為第三化合物的情況下,較佳為電子傳輸性的第三化合物與電洞傳輸性的第三化合物的組合。藉由以適當的混合比組合電子傳輸性的第三化合物與電洞傳輸性的第三化合物,可調整發光層內的電荷平衡,抑制發光區域的偏移,從而可提高發光元件的可靠性,提高耐久性。另外,亦可於電子傳輸性的第三化合物與電洞傳輸性的第三化合物之間形成激發錯合物。就以上觀點而言,較佳為第一化合物與第三化合物分別滿足下述式1~式4的關係式。另外,更佳為滿足式1及式2,進而佳為滿足式3及式4。另外,進一步更佳為全部滿足式1~式4。 S1(電子傳輸性的第三化合物)>S1(第一化合物)(式1) S1(電洞傳輸性的第三化合物)>S1(第一化合物)(式2) T1(電子傳輸性的第三化合物)>T1(第一化合物)(式3) T1(電洞傳輸性的第三化合物)>T1(第一化合物)(式4) 此處,S1表示各化合物的最低激發單重態狀態的能階,T1表示各化合物的最低激發三重態狀態的能階。In addition, the third compound may be composed of a single material, or may be composed of two or more materials. When two or more materials are used as the third compound, it is preferably a combination of an electron-transporting third compound and a hole-transporting third compound. By combining the electron-transporting third compound and the hole-transporting third compound in an appropriate mixing ratio, the charge balance in the light-emitting layer can be adjusted, the shift of the light-emitting region can be suppressed, and the reliability of the light-emitting device can be improved. Improve durability. In addition, an excited complex compound may be formed between the electron-transporting third compound and the hole-transporting third compound. From the above viewpoints, it is preferable that the first compound and the third compound satisfy the relational expressions of the following formulas 1 to 4, respectively. In addition, it is more preferable to satisfy formula 1 and formula 2, and it is still more preferable to satisfy formula 3 and formula 4. In addition, it is more preferable that all of Formula 1 to Formula 4 are satisfied. S1 (the third compound with electron transport properties)>S1 (the first compound) (Formula 1) S1 (the third compound with hole transport properties)> S1 (the first compound) (Formula 2) T1 (the third compound with electron transport properties)> T1 (the first compound) (Formula 3) T1 (the third compound with hole transport properties)> T1 (the first compound) (Formula 4) Here, S1 represents the energy level of the lowest excited singlet state of each compound, and T1 represents the energy level of the lowest excited triplet state of each compound.

作為電子傳輸性的第三化合物,可列舉含有π電子不足型雜芳香環的化合物等。具體而言,可例示:2-(4-聯苯基)-5-(4-第三丁基苯基)-1,3,4-噁二唑(PBD)、3-(4-聯苯基)-4-苯基-5-(4-第三丁基苯基)-1,2,4-三唑(TAZ)、1,3-雙[5-(對第三丁基苯基)-1,3,4-噁二唑-2-基]苯(OXD-7)、9-[4-(5-苯基-1,3,4-噁二唑-2-基)苯基]-9H-咔唑(CO11)、2,2',2''-(1,3,5-苯三基)三(1-苯基-1H-苯並咪唑)(TPBI)、2-[3-(二苯並噻吩-4-基)苯基]-1-苯基-1H-苯並咪唑(mDBTBIm-II)等具有多唑骨架的雜環化合物;2-[3-(二苯並噻吩-4-基)苯基]二苯並[f,h]喹噁啉(2mDBTPDBq-II)、2-[3'-(二苯並噻吩-4-基)聯苯-3-基]二苯並[f,h]喹噁啉(2mDBTBPDBq-II)、2-[4-(3,6-二苯基-9H-咔唑-9-基)苯基]二苯並[f,h]喹噁啉(2CzPDBq-III)、7-[3-(二苯並噻吩-4-基)苯基]二苯並[f,h]喹噁啉(7mDBTPDBq-II)及6-[3-(二苯並噻吩-4-基)苯基]二苯並[f,h]喹噁啉(6mDBTPDBq-II)、2-[3'-(9H-咔唑-9-基)聯苯基-3-基]二苯並[f,h]喹噁啉(2mCzBPDBq)等具有喹噁啉骨架或二苯並喹噁啉骨架的雜環化合物;4,6-雙[3-(菲-9-基)苯基]嘧啶(4,6mPnP2Pm)、4,6-雙[3-(9H-咔唑-9-基)苯基]嘧啶(4,6mCzP2Pm)、4,6-雙[3-(4-二苯並噻吩基)苯基]嘧啶(4,6mDBTP2Pm-II)等具有二嗪骨架(嘧啶骨架或吡嗪骨架)的雜環化合物;3,5-雙[3-(9H-咔唑-9-基)苯基]吡啶(3,5DCzPPy)、1,3,5-三[3-(3-吡啶基)苯基]苯(TmPyPB)、3,3',5,5'-四[(間吡啶基)-苯-3-基]聯苯(BP4mPy)等具有吡啶骨架的雜環化合物。As the third electron-transporting compound, a compound containing a π-electron-deficient heteroaromatic ring and the like can be cited. Specifically, examples include: 2-(4-biphenyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (PBD), 3-(4-biphenyl) Yl)-4-phenyl-5-(4-tertiary butylphenyl)-1,2,4-triazole (TAZ), 1,3-bis[5-(p-tertiary butylphenyl) -1,3,4-oxadiazol-2-yl]benzene (OXD-7), 9-[4-(5-phenyl-1,3,4-oxadiazol-2-yl)phenyl] -9H-carbazole (CO11), 2,2',2''-(1,3,5-benzenetriyl) tris(1-phenyl-1H-benzimidazole) (TPBI), 2-[3 -(Dibenzothiophen-4-yl)phenyl]-1-phenyl-1H-benzimidazole (mDBTBIm-II) and other heterocyclic compounds with a polyazole skeleton; 2-[3-(dibenzothiophene -4-yl)phenyl]dibenzo[f,h]quinoxaline (2mDBTPDBq-II), 2-[3'-(dibenzothiophen-4-yl)biphenyl-3-yl]diphenyl And [f,h]quinoxaline (2mDBTBPDBq-II), 2-[4-(3,6-diphenyl-9H-carbazol-9-yl)phenyl]dibenzo[f,h]quine Oxaline (2CzPDBq-III), 7-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (7mDBTPDBq-II) and 6-[3-(二Benzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (6mDBTPDBq-II), 2-[3'-(9H-carbazol-9-yl)biphenyl-3- Yl]dibenzo[f,h]quinoxaline (2mCzBPDBq) and other heterocyclic compounds with a quinoxaline skeleton or a dibenzoquinoxaline skeleton; 4,6-bis[3-(phenanthrene-9-yl) Phenyl]pyrimidine (4,6mPnP2Pm), 4,6-bis[3-(9H-carbazol-9-yl)phenyl]pyrimidine (4,6mCzP2Pm), 4,6-bis[3-(4-bis Benzothienyl) phenyl] pyrimidine (4,6mDBTP2Pm-II) and other heterocyclic compounds having a diazine skeleton (pyrimidine skeleton or pyrazine skeleton); 3,5-bis[3-(9H-carbazole-9- Group) phenyl] pyridine (3,5DCzPPy), 1,3,5-tris [3-(3-pyridyl) phenyl] benzene (TmPyPB), 3,3',5,5'-tetra[(between Pyridyl)-phenyl-3-yl]biphenyl (BP4mPy) and other heterocyclic compounds with a pyridine skeleton.

另外,作為所述電洞傳輸性的第三化合物,可列舉含有π電子過剩型雜芳香環的化合物等。具體而言,可例示1,3-雙(N-咔唑基)苯、4,4'-二(N-咔唑基)聯苯(CBP)、3,3'-二(N-咔唑基)聯苯(mCBP)、1,3,5-三[4-(N-咔唑基)苯基]苯(TCPB)、9-[4-(10-苯基-9-蒽基)苯基]-9H-咔唑(CzPA)、1,4-雙[4-(N-咔唑基)苯基]-2,3,5,6-四苯基苯、9-苯基-9H-3-(9-苯基-9H-咔唑-3-基)咔唑、3,6-雙[N-(9-苯基咔唑-3-基)-N-苯基胺基]-9-苯基咔唑(PCzPCA2)、3-[N-(1-萘基)-N-(9-苯基咔唑-3-基)胺基]-9-苯基咔唑(PCzPCN1)、9-([1,1-聯苯]-4-基)-9'-([1,1':4',1''-三聯苯]-4-基)-9H,9'H-3,3'-二咔唑、9-([1,1':4',1''-三聯苯]-4-基)-9'-(萘-2-基)-9H,9'H-3,3'-二咔唑、9,9',9''-三苯基-9H,9'H,9''H-3,3':6',3''-三咔唑等具有咔唑骨架的化合物。In addition, as the third compound having hole transport properties, a compound containing a π-electron-excess type heteroaromatic ring can be cited. Specifically, 1,3-bis(N-carbazolyl)benzene, 4, 4'-bis(N-carbazolyl)biphenyl (CBP), 3,3'-bis(N-carbazolyl)biphenyl (mCBP), 1,3,5-tris[4-(N-carb Azolyl)phenyl]benzene (TCPB), 9-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (CzPA), 1,4-bis[4-(N- (Carbazolyl)phenyl)-2,3,5,6-tetraphenylbenzene, 9-phenyl-9H-3-(9-phenyl-9H-carbazol-3-yl)carbazole, 3, 6-Bis[N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazole (PCzPCA2), 3-[N-(1-naphthyl)-N -(9-Phenylcarbazol-3-yl)amino]-9-phenylcarbazole (PCzPCN1), 9-([1,1-biphenyl]-4-yl)-9'-([1 ,1':4',1''-terphenyl]-4-yl)-9H,9'H-3,3'-dicarbazole, 9-([1,1':4',1'' -Terphenyl)-4-yl)-9'-(naphthalen-2-yl)-9H,9'H-3,3'-dicarbazole, 9,9',9''-triphenyl-9H ,9'H,9''H-3,3':6',3''-tricarbazole and other compounds having a carbazole skeleton.

(電子傳輸層) 電子傳輸層是自陰極注入電子並進一步傳輸電子的層。作為電子傳輸層中所使用的電子傳輸材料,要求為電子親和力大、電子遷移率大、穩定性優異、以及不易產生成為陷阱的雜質的物質。另外,低分子量的化合物容易結晶化而使膜質劣化,因此較佳為分子量為400以上的化合物。(Electron transport layer) The electron transport layer is a layer that injects electrons from the cathode and further transports electrons. As the electron transport material used in the electron transport layer, it is required to have a high electron affinity, high electron mobility, excellent stability, and a substance that does not easily generate impurities that become traps. In addition, a low-molecular-weight compound is likely to crystallize and deteriorate the film quality, so a compound having a molecular weight of 400 or more is preferred.

本發明中的電子傳輸層中亦包括可效率良好地阻擋電洞的遷移的電洞阻擋層作為相同含義者。電洞阻擋層及電子傳輸層可單獨構成,亦可將多種材料積層構成。The electron transport layer in the present invention also includes a hole blocking layer that can efficiently block the migration of holes as the same meaning. The hole blocking layer and the electron transport layer can be constructed separately, or multiple materials can be laminated.

作為電子傳輸材料,可列舉多環芳香族衍生物、苯乙烯基系芳香環衍生物、醌衍生物、氧化磷衍生物、三(8-羥基喹啉)鋁(III)等羥喹啉錯合物、苯並羥喹啉錯合物、羥基唑錯合物、次甲基偶氮(azomethine)錯合物、托酚酮(tropolone)金屬錯合物及黃酮醇金屬錯合物等各種金屬錯合物。就降低驅動電壓、可獲得高效率發光而言,較佳為使用具有含有電子接受性氮的雜芳基的化合物。此處,所謂電子接受性氮,表示在與鄰接原子之間形成有多重鍵的氮原子。含有電子接受性氮的雜芳基的電子親和力大,因此容易注入來自陰極的電子,可以更低的電壓驅動。另外,對發光層供給的電子變多,再結合概率變高,因此發光效率提高。作為具有含有電子接受性氮的雜芳基結構的化合物,例如可列舉吡啶衍生物、三嗪衍生物、吡嗪衍生物、嘧啶衍生物、喹啉衍生物、喹噁啉衍生物、喹唑啉衍生物、萘啶衍生物、苯並喹啉衍生物、啡啉衍生物、咪唑衍生物、噁唑衍生物、噻唑衍生物、三唑衍生物、噁二唑衍生物、噻二唑衍生物、苯並咪唑衍生物、苯並噁唑衍生物、苯並噻唑衍生物、菲並咪唑衍生物及聯吡啶或三聯吡啶等寡聚吡啶衍生物等作為較佳的化合物。其中,就電子傳輸能力的觀點而言,可較佳地使用三(N-苯基苯並咪唑-2-基)苯等咪唑衍生物、1,3-雙[(4-第三丁基苯基)-1,3,4-噁二唑基]伸苯等噁二唑衍生物;N-萘基-2,5-二苯基-1,3,4-三唑等三唑衍生物;2,9-二甲基-4,7-二苯基-1,10-啡啉(bathocuproin)或1,3-雙(1,10-啡啉-9-基)苯等啡啉衍生物;2,2'-雙(苯並[h]喹啉-2-基)-9,9'-螺二芴等苯並喹啉衍生物;2,5-雙(6'-(2',2"-聯吡啶基))-1,1-二甲基-3,4-二苯基矽羅等聯吡啶衍生物;1,3-雙(4'-(2,2':6'2"-三聯吡啶基))苯等三聯吡啶衍生物;雙(1-萘基)-4-(1,8-萘啶-2-基)苯基膦氧化物等萘啶衍生物及三嗪衍生物。Examples of electron transport materials include polycyclic aromatic derivatives, styryl aromatic ring derivatives, quinone derivatives, phosphorus oxide derivatives, tris(8-hydroxyquinoline) aluminum (III) and other hydroxyquinoline complexes Complexes, benzohydroxyquinoline complexes, hydroxyazole complexes, azomethine complexes, tropolone metal complexes and flavonol metal complexes and other metal complexes Compound. In terms of lowering the driving voltage and obtaining high-efficiency light emission, it is preferable to use a compound having a heteroaryl group containing electron-accepting nitrogen. Here, the term “electron-accepting nitrogen” refers to a nitrogen atom that forms multiple bonds with adjacent atoms. The heteroaryl group containing electron-accepting nitrogen has a high electron affinity, and therefore it is easy to inject electrons from the cathode and can be driven at a lower voltage. In addition, more electrons are supplied to the light-emitting layer, and the probability of recombination becomes higher, so the luminous efficiency is improved. Examples of compounds having a heteroaryl structure containing electron-accepting nitrogen include pyridine derivatives, triazine derivatives, pyrazine derivatives, pyrimidine derivatives, quinoline derivatives, quinoxaline derivatives, and quinazoline Derivatives, naphthyridine derivatives, benzoquinoline derivatives, phenanthroline derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, triazole derivatives, oxadiazole derivatives, thiadiazole derivatives, Benzimidazole derivatives, benzoxazole derivatives, benzothiazole derivatives, phenanthrimidazole derivatives, and oligopyridine derivatives such as bipyridine or terpyridine are preferred compounds. Among them, from the viewpoint of electron transport ability, imidazole derivatives such as tris(N-phenylbenzimidazol-2-yl)benzene, 1,3-bis[(4-tertiary butylbenzene) Yl)-1,3,4-oxadiazolyl] phenylene and other oxadiazole derivatives; N-naphthyl-2,5-diphenyl-1,3,4-triazole and other triazole derivatives; 2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline (bathocuproin) or 1,3-bis(1,10-phenantholin-9-yl)phenanthroline derivatives; 2,2'-bis(benzo[h]quinolin-2-yl)-9,9'-spirobifluorene and other benzoquinoline derivatives; 2,5-bis(6'-(2',2 "-Bipyridyl))-1,1-dimethyl-3,4-diphenylsilol and other bipyridine derivatives; 1,3-bis(4'-(2,2':6'2" -Terpyridyl)) benzene and other terpyridine derivatives; bis(1-naphthyl)-4-(1,8-naphthyridin-2-yl)phenylphosphine oxide and other naphthyridine derivatives and triazine derivatives .

另外,若電子傳輸材料具有縮合多環芳香族骨架,則玻璃轉移溫度提高,且電子遷移率變大,可實現低電壓化,因此更佳。作為此種縮合多環芳香族骨架,較佳為熒蒽骨架、蒽骨架、芘骨架或啡啉骨架,尤佳為熒蒽骨架或啡啉骨架。In addition, if the electron transport material has a condensed polycyclic aromatic skeleton, the glass transition temperature will increase, and the electron mobility will increase, so that the voltage can be lowered, which is more preferable. As such a condensed polycyclic aromatic skeleton, a fluoranthene skeleton, an anthracene skeleton, a pyrene skeleton or a phenanthroline skeleton is preferable, and a fluoranthene skeleton or a phenanthroline skeleton is particularly preferable.

電子傳輸材料可單獨使用,亦可將兩種以上混合使用。另外,電子傳輸層亦可含有施體性材料。此處,所謂施體性材料,是指藉由改善電子注入障壁而使自陰極或電子注入層向電子傳輸層的電子注入變容易,進而提高電子傳輸層的導電性的化合物。The electron transport material can be used alone or in a mixture of two or more. In addition, the electron transport layer may also contain a donor material. Here, the term “donor material” refers to a compound that facilitates electron injection from the cathode or the electron injection layer to the electron transport layer by improving the electron injection barrier, thereby improving the conductivity of the electron transport layer.

作為施體性材料的較佳例,可列舉:Li等鹼金屬、LiF等含有鹼金屬的無機鹽、喹啉醇鋰等鹼金屬與有機物的錯合物、鹼土金屬、含有鹼土金屬的無機鹽、鹼土金屬與有機物的錯合物、Eu或Yb等稀土金屬、含有稀土金屬的無機鹽、稀土金屬與有機物的錯合物等。作為施體性材料,尤佳為金屬鋰、稀土金屬、喹啉醇鋰(Liq)。Preferred examples of donor materials include: alkali metals such as Li, inorganic salts containing alkali metals such as LiF, complexes of alkali metals and organic substances such as lithium quinolate, alkaline earth metals, and inorganic salts containing alkaline earth metals , Complexes of alkaline earth metals and organics, rare earth metals such as Eu or Yb, inorganic salts containing rare earth metals, complexes of rare earth metals and organics, etc. As the donor material, metallic lithium, rare earth metals, and lithium quinolate (Liq) are particularly preferred.

(電子注入層) 本發明中,亦可於陰極與電子傳輸層之間設置電子注入層。一般電子注入層是出於幫助電子自陰極向電子傳輸層的注入的目的而形成,包含:具有含有電子接受性氮的雜芳基環結構的化合物、或所述施體性材料。較佳為例如後述的通式(4)所表示的啡啉衍生物。(Electron injection layer) In the present invention, an electron injection layer may also be provided between the cathode and the electron transport layer. Generally, the electron injection layer is formed for the purpose of assisting the injection of electrons from the cathode to the electron transport layer, and includes a compound having a heteroaryl ring structure containing electron-accepting nitrogen, or the donor material. Preferably, it is a phenanthroline derivative represented by general formula (4) mentioned later.

另外,電子注入層亦可使用絕緣體或半導體的無機物。藉由使用該些材料,可防止發光元件的短路,且可提高電子注入性,因此較佳。In addition, an insulator or a semiconductor inorganic substance may be used for the electron injection layer. By using these materials, the short circuit of the light-emitting element can be prevented, and the electron injection performance can be improved, so it is preferable.

作為此種絕緣體,較佳為使用選自由鹼金屬硫屬化物、鹼土金屬硫屬化物、鹼金屬的鹵化物以及鹼土金屬的鹵化物所組成的群組中的至少一種金屬化合物。As such an insulator, it is preferable to use at least one metal compound selected from the group consisting of alkali metal chalcogenides, alkaline earth metal chalcogenides, alkali metal halides, and alkaline earth metal halides.

(電荷產生層) 本發明中的電荷產生層是藉由施加電壓而產生或分離電荷並向鄰接的層中注入電荷的層。電荷產生層可由一層形成,亦可積層多層。一般將容易產生電子作為電荷者稱為n型電荷產生層,將容易產生電洞者稱為p型電荷產生層。電荷產生層較佳為包含兩層,更佳為包含n型電荷產生層及p型電荷產生層的pn接合型電荷產生層。pn接合型電荷產生層藉由於發光元件中施加電壓而產生電荷,或者將電荷分離為電洞及電子,將該些電洞及電子經由電洞傳輸層及電子傳輸層注入發光層。具體而言,於包含多個發光層的發光元件中,於使用電荷產生層作為中間層的情況下,n型電荷產生層向存在於陽極側的第一發光層供給電子,p型電荷產生層向存在於陰極側的第二發光層供給電洞。因此,於具有兩層以上的發光層的發光元件中,藉由於發光層與發光層之間具有一層以上的電荷產生層,可進一步提高元件效率,降低驅動電壓,並可進一步提高元件的耐久性。(Charge generation layer) The charge generation layer in the present invention is a layer that generates or separates charges by applying a voltage and injects the charges into adjacent layers. The charge generation layer may be formed of one layer, or multiple layers may be stacked. Generally, those that easily generate electrons as charges are called n-type charge generation layers, and those that easily generate holes are called p-type charge generation layers. The charge generation layer preferably includes two layers, more preferably a pn junction type charge generation layer including an n-type charge generation layer and a p-type charge generation layer. The pn junction type charge generation layer generates charges by applying a voltage to the light-emitting element, or separates the charges into holes and electrons, and injects these holes and electrons into the light-emitting layer through the hole transport layer and the electron transport layer. Specifically, in a light-emitting element including a plurality of light-emitting layers, when a charge-generating layer is used as an intermediate layer, the n-type charge-generating layer supplies electrons to the first light-emitting layer existing on the anode side, and the p-type charge-generating layer Holes are supplied to the second light-emitting layer existing on the cathode side. Therefore, in a light-emitting device having two or more light-emitting layers, by having more than one charge generation layer between the light-emitting layer and the light-emitting layer, the efficiency of the device can be further improved, the driving voltage can be reduced, and the durability of the device can be further improved. .

n型電荷產生層包含n型摻雜劑及n型主體,該些可使用先前的材料。例如,作為n型摻雜劑,可較佳地使用作為電子傳輸層的材料而例示的施體性材料。該些中,較佳為鹼金屬或其鹽、稀土金屬,進而佳為選自金屬鋰、氟化鋰(LiF)、喹啉醇鋰(Liq)及金屬鐿中的材料。另外,作為n型主體,可較佳地使用作為電子傳輸材料而例示者。該些中,較佳為選自三嗪衍生物、啡啉衍生物及寡聚吡啶衍生物中的材料,更佳為啡啉衍生物或三聯吡啶衍生物,進而佳為下述通式(4)所表示的啡啉衍生物。即,較佳為於電荷產生層中含有通式(4)所表示的啡啉衍生物。The n-type charge generation layer includes an n-type dopant and an n-type host, and the previous materials can be used for these. For example, as the n-type dopant, the donor material exemplified as the material of the electron transport layer can be preferably used. Among these, preferred are alkali metals or their salts, and rare earth metals, and more preferred are materials selected from metallic lithium, lithium fluoride (LiF), lithium quinolate (Liq), and metallic ytterbium. In addition, as the n-type host, those exemplified as electron transport materials can be preferably used. Among these, materials selected from triazine derivatives, phenanthroline derivatives and oligopyridine derivatives are preferred, phenanthroline derivatives or terpyridine derivatives are more preferred, and the following general formula (4 ) Represented by the phenanthroline derivative. That is, it is preferable to contain the phenanthroline derivative represented by general formula (4) in the charge generation layer.

[化48]

Figure 02_image100
[化48]
Figure 02_image100

所述通式(4)中,Ar2 選自由p價芳香族烴基及p價雜芳香環基所組成的群組中。p為1~3的自然數。R15 ~R22 分別可相同亦可不同,選自由氫原子、烷基、環烷基、雜環基、芳基及雜芳基所組成的群組中。Ar2 中,p個啡啉基的取代位置為任意位置。In the general formula (4), Ar 2 is selected from the group consisting of a p-valent aromatic hydrocarbon group and a p-valent heteroaromatic ring group. p is a natural number from 1 to 3. R 15 to R 22 may be the same or different, and are selected from the group consisting of a hydrogen atom, an alkyl group, a cycloalkyl group, a heterocyclic group, an aryl group, and a heteroaryl group. In Ar 2 , the substitution positions of p phenanthroline groups are arbitrary positions.

作為芳香族烴基及雜芳香環基,例如可列舉所述芳基及雜芳基的例子中記載的基,但並不限定於該些基。芳香族烴基或雜芳香環基除菲基以外亦可進一步具有取代基。As an aromatic hydrocarbon group and a heteroaromatic ring group, the group described in the example of the said aryl group and heteroaryl group can be mentioned, for example, but it is not limited to these groups. The aromatic hydrocarbon group or heteroaromatic ring group may further have a substituent in addition to the phenanthrene group.

就昇華性及薄膜形成性的觀點而言,p較佳為2。From the standpoint of sublimability and film formation, p is preferably 2.

以下示出通式(4)所表示的啡啉衍生物的一例。An example of the phenanthroline derivative represented by the general formula (4) is shown below.

[化49]

Figure 02_image102
[化49]
Figure 02_image102

所述p型電荷產生層包含p型摻雜劑及p型主體,該些可使用先前的材料。例如,作為p型摻雜劑,可較佳地使用作為電洞注入層的材料而例示的受體性材料或碘、FeCl3 、FeF3 、SbCl5 等。具體而言,可列舉HAT-CN6、F4-TCNQ、四氰基醌二甲烷衍生物、軸烯衍生物、碘、FeCl3 、FeF3 、SbCl5 等。該些中,更佳為HAT-CN6或(2E,2'E,2''E)-2,2',2''-(環丙烷-1,2,3-三亞基)三(2-(全氟苯基)-乙腈)、(2E,2'E,2''E)-2,2',2''-(環丙烷-1,2,3-三亞基)三(2-(4-氰基全氟苯基)-乙腈)等軸烯衍生物。可形成p型摻雜劑的薄膜,其膜厚較佳為10 nm以下。另外,作為p型摻雜劑,較佳為芳基胺衍生物。The p-type charge generation layer includes a p-type dopant and a p-type host, and the previous materials can be used for these. For example, as the p-type dopant, the acceptor material exemplified as the material of the hole injection layer, or iodine, FeCl 3 , FeF 3 , SbCl 5 or the like can be preferably used. Specifically, HAT-CN6, F4-TCNQ, tetracyanoquinodimethane derivatives, axene derivatives, iodine, FeCl 3 , FeF 3 , SbCl 5 and the like can be mentioned. Among these, HAT-CN6 or (2E, 2'E, 2''E)-2,2',2''-(cyclopropane-1,2,3-triylene) tris(2- (Perfluorophenyl)-acetonitrile), (2E,2'E,2``E)-2,2',2''-(cyclopropane-1,2,3-triylidene)tris(2-( 4-cyanoperfluorophenyl)-acetonitrile) isometric ene derivatives. A thin film of p-type dopant can be formed, and its thickness is preferably 10 nm or less. In addition, the p-type dopant is preferably an arylamine derivative.

(發光元件的形成方法) 構成發光元件的所述各層的形成方法可為乾式製程或濕式製程中的任一種,雖然不特別限定於電阻加熱蒸鍍、電子束蒸鍍、濺鍍、分子積層法、塗佈法、噴墨法、印刷法等,但通常就元件特性的方面而言,較佳為電阻加熱蒸鍍。(Method of forming light-emitting element) The method for forming the layers constituting the light-emitting element may be any of a dry process or a wet process, although it is not particularly limited to resistance heating vapor deposition, electron beam vapor deposition, sputtering, molecular stacking method, coating method, spraying method, etc. Ink method, printing method, etc., generally, resistance heating vapor deposition is preferable in terms of element characteristics.

有機層的厚度取決於發光物質的電阻值,因此無法限定,但較佳為1 nm~1000 nm。發光層、電子傳輸層及電洞傳輸層的膜厚分別較佳為1 nm以上且200 nm以下,進而佳為5 nm以上且100 nm以下。The thickness of the organic layer depends on the resistance value of the light-emitting material, so it cannot be limited, but it is preferably 1 nm to 1000 nm. The film thicknesses of the light-emitting layer, the electron transport layer, and the hole transport layer are each preferably 1 nm or more and 200 nm or less, and more preferably 5 nm or more and 100 nm or less.

(發光元件的特性) 本發明的實施形態的發光元件具有可將電能轉換為光的功能。此處,作為電能,主要使用直流電流,但亦可使用脈衝電流或交流電流。電流值及電壓值並無特別限制,根據元件的目的而要求的特性值不同,就元件的消耗電力或壽命的觀點而言,較佳為以低電壓獲得高亮度。(Characteristics of light-emitting elements) The light-emitting element of the embodiment of the present invention has a function of converting electric energy into light. Here, as electric energy, direct current is mainly used, but pulse current or alternating current may also be used. The current value and the voltage value are not particularly limited, and the required characteristic values are different depending on the purpose of the element. From the viewpoint of the power consumption and the life of the element, it is preferable to obtain high brightness at a low voltage.

就提高顏色純度的觀點而言,本發明的實施形態的發光元件較佳為通電引起的發光光譜的半值寬度為60 nm以下,更佳為50 nm以下,進而佳為45 nm以下,尤佳為30 nm以下。From the viewpoint of improving the color purity, the light-emitting element of the embodiment of the present invention preferably has a half-value width of the emission spectrum caused by energization of 60 nm or less, more preferably 50 nm or less, and still more preferably 45 nm or less, and most preferably Below 30 nm.

本發明的發光元件由於發光光譜的半值寬度窄,因此更佳為用於頂部發光型的發光元件。頂部發光型發光元件藉由微腔所帶來的共振效果,半值寬度越窄,發光效率越高。因此,可使高顏色純度與高發光效率併存。Since the light-emitting element of the present invention has a narrow half-value width of the emission spectrum, it is more preferably used for a top-emission type light-emitting element. The top-emission type light-emitting element uses the resonance effect brought by the microcavity, and the narrower the half-value width, the higher the luminous efficiency. Therefore, high color purity and high luminous efficiency can coexist.

(發光元件的用途) 本發明的實施形態的發光元件例如可較佳地用作以矩陣及/或分段(segment)方式顯示的顯示器等顯示裝置。(Use of light-emitting elements) The light-emitting element of the embodiment of the present invention can be preferably used as a display device such as a display that displays in a matrix and/or a segment.

另外,本發明的實施形態的發光元件亦可較佳地用作各種設備等的背光。背光主要是出於提高自身不發光的顯示器等顯示裝置的視認性的目的而使用,可用於液晶顯示器、時鐘、音頻裝置、汽車面板、顯示板及標識等顯示裝置中。特別是本發明的發光元件可較佳地用於液晶顯示器中正在研究薄型化的個人電腦用途的背光中,可提供較先前更為薄型且輕量的背光。In addition, the light-emitting element of the embodiment of the present invention can also be suitably used as a backlight for various devices and the like. The backlight is mainly used for the purpose of improving the visibility of display devices such as non-luminous displays, and can be used in display devices such as liquid crystal displays, clocks, audio devices, car panels, display panels, and signs. In particular, the light-emitting element of the present invention can be preferably used in a backlight for a personal computer in which thinning is being studied in a liquid crystal display, and can provide a thinner and lighter backlight than before.

另外,本發明的實施形態的發光元件亦可較佳地用作各種照明裝置。本發明的實施形態的發光元件可使高發光效率與高顏色純度併存,進而,可實現薄型化及輕量化,因此可實現兼具低消耗電力、鮮明的發光色、高設計性的照明裝置。 [實施例]In addition, the light-emitting element of the embodiment of the present invention can also be suitably used as various lighting devices. The light-emitting element according to the embodiment of the present invention can coexist high luminous efficiency and high color purity, and furthermore, can be thinned and lightened. Therefore, it is possible to realize a lighting device that combines low power consumption, bright luminous color, and high design. [Example]

以下,列舉實施例對本發明進行說明,但本發明並不受該些例子限定。Hereinafter, the present invention will be explained with reference to examples, but the present invention is not limited by these examples.

合成例1 化合物D-1的合成方法 按照下述反應流程合成化合物D-1。Synthesis example 1 Synthesis method of compound D-1 Compound D-1 was synthesized according to the following reaction scheme.

[化50]

Figure 02_image104
[化50]
Figure 02_image104

將2,6-二溴苯甲醛5.35 g、4-第三丁基苯基硼酸7.40 g、碳酸鈉5.38 g、二甲氧基乙烷100 mL、水20 mL放入至燒瓶中,進行氮置換。於其中加入雙(三苯基膦)鈀(II)二氯化物142 mg,進行4小時回流。將反應溶液冷卻至室溫,於將有機層分液後,利用硫酸鎂乾燥,於進行過濾後,蒸餾去除溶媒。於所得的反應生成物中加入甲醇,並進行過濾,藉此獲得2,6-雙(對第三丁基苯基)苯甲醛4.03 g作為白色固體。Put 5.35 g of 2,6-dibromobenzaldehyde, 7.40 g of 4-tert-butylphenylboronic acid, 5.38 g of sodium carbonate, 100 mL of dimethoxyethane, and 20 mL of water into the flask, and perform nitrogen replacement . 142 mg of bis(triphenylphosphine)palladium(II) dichloride was added thereto, and refluxing was performed for 4 hours. The reaction solution was cooled to room temperature, and after the organic layer was separated, it was dried with magnesium sulfate, and after filtration, the solvent was distilled off. Methanol was added to the obtained reaction product and filtered, thereby obtaining 4.03 g of 2,6-bis(p-tert-butylphenyl)benzaldehyde as a white solid.

將如此獲得的2,6-雙(對第三丁基苯基)苯甲醛4.03 g及2,4-二甲基吡咯2.17 g放入至反應容器中,加入二氯甲烷360 mL及5滴三氟乙酸,於室溫下攪拌1周。進而加入2,3-二氯-5,6-二氰基-1,4-苯醌(2,3-Dichloro-5,6-Dicyano-1,4-Benzoquinone,DDQ)2.70 g,於室溫下攪拌4天。之後,進行過濾,蒸餾去除溶媒。於所得的反應生成物中加入二氯甲烷360 mL及二異丙基乙胺5.90 mL,於室溫下攪拌30分鐘,進而加入三氟化硼二乙醚錯合物4.10 mL,於室溫下攪拌4小時後,蒸餾去除溶媒,加水進行攪拌。將有機層分液,利用飽和食鹽水清洗。利用硫酸鎂乾燥該有機層,於過濾後蒸餾去除溶媒。將所得的反應生成物藉由矽膠化層析法進行精製,獲得紅色粉末580 mg。藉由1 H-核磁共振(Nuclear Magnetic Resonance,NMR)及液相層析質譜法(Liquid Chromatography-Mass Spectrometry,LC-MS)分析所得的粉末,確認了紅色粉末為作為吡咯亞甲基硼錯合物的化合物D-1。1 H-NMR(CDCl3 (d=ppm)):7.52(d, 1H), 7.43(d, 2H), 7.23-7.17(m, 4H), 7.10(d, 4H), 5.79(s, 2H), 2.38(s, 6H), 1.52(s, 6H), 1.22(s, 18H) MS(m/z)分子量:589。Put 4.03 g of 2,6-bis(p-tert-butylphenyl)benzaldehyde and 2.17 g of 2,4-dimethylpyrrole thus obtained into the reaction vessel, add 360 mL of dichloromethane and 5 drops of three Fluoroacetic acid, stirring at room temperature for 1 week. Furthermore, 2.70 g of 2,3-Dichloro-5,6-dicyano-1,4-benzoquinone (2,3-Dichloro-5,6-Dicyano-1,4-Benzoquinone, DDQ) was added, at room temperature Stir for 4 days. After that, it was filtered and the solvent was distilled off. Add 360 mL of dichloromethane and 5.90 mL of diisopropylethylamine to the resulting reaction product, stir at room temperature for 30 minutes, and then add 4.10 mL of boron trifluoride diethyl ether complex, and stir at room temperature After 4 hours, the solvent was distilled off, and water was added and stirred. The organic layer was separated and washed with saturated brine. The organic layer was dried with magnesium sulfate, and the solvent was distilled off after filtration. The obtained reaction product was purified by silica gel chromatography to obtain 580 mg of red powder. The powder obtained was analyzed by 1 H-NMR (Nuclear Magnetic Resonance, NMR) and Liquid Chromatography-Mass Spectrometry (LC-MS), and it was confirmed that the red powder was complex as pyrromethene boron Compound D-1. 1 H-NMR(CDCl 3 (d=ppm)): 7.52(d, 1H), 7.43(d, 2H), 7.23-7.17(m, 4H), 7.10(d, 4H), 5.79(s, 2H) , 2.38(s, 6H), 1.52(s, 6H), 1.22(s, 18H) MS (m/z) molecular weight: 589.

以下示出化合物D-1在溶液中的發光特性。 吸收光譜(溶媒:甲苯):λmax為513 nm 螢光光譜(溶媒:甲苯):λmax為526 nm、半值寬度為23 nm 螢光量子產率(溶媒:甲苯,激發光:460 nm):100%。The luminescence characteristics of compound D-1 in solution are shown below. Absorption spectrum (solvent: toluene): λmax is 513 nm Fluorescence spectrum (solvent: toluene): λmax is 526 nm, half-value width is 23 nm Fluorescence quantum yield (solvent: toluene, excitation light: 460 nm): 100%.

為了進一步提高純度而進行昇華精製。於玻璃管中設置裝入有化合物D-1的金屬容器,使用油擴散泵於1×10-3 Pa的壓力下、於190℃下將其加熱而使化合物D-1昇華。回收附著在玻璃管壁的固體,藉由LC-MS分析確認了純度為99%。In order to further improve the purity, sublimation purification is performed. A metal container filled with compound D-1 was set in the glass tube, and the compound D-1 was sublimated by heating it at 190°C under a pressure of 1×10 -3 Pa using an oil diffusion pump. The solid adhering to the wall of the glass tube was recovered, and the purity of 99% was confirmed by LC-MS analysis.

合成例2 化合物D-2的合成方法 按照下述反應流程合成化合物D-2。Synthesis Example 2 Synthetic method of compound D-2 Compound D-2 was synthesized according to the following reaction scheme.

[化51]

Figure 02_image106
[化51]
Figure 02_image106

將2,4,6-三氯苯甲醛4.16 g、4-第三丁基苯基硼酸11.0 g、磷酸鉀21.12 g、二噁烷100 mL、水20 mL放入至燒瓶中,進行氮置換。於其中加入雙(二亞苄基丙酮)鈀(0)229 mg及XPhos 379 mg,進行2小時回流。將反應溶液冷卻至室溫,於將有機層分液後,利用硫酸鎂進行乾燥,於進行過濾後,蒸餾去除溶媒。將所得的反應生成物利用矽膠化層析法進行精製,藉此獲得2,4,6-三(對第三丁基苯基)苯甲醛9.76 g作為白色固體。Put 4.16 g of 2,4,6-trichlorobenzaldehyde, 11.0 g of 4-tert-butylphenylboronic acid, 21.12 g of potassium phosphate, 100 mL of dioxane, and 20 mL of water into the flask, and perform nitrogen substitution. 229 mg of bis(dibenzylideneacetone)palladium(0) and 379 mg of XPhos were added thereto, and refluxing was performed for 2 hours. The reaction solution was cooled to room temperature, and after the organic layer was separated, it was dried with magnesium sulfate, and after filtration, the solvent was distilled off. The obtained reaction product was purified by silica gel chromatography to obtain 9.76 g of 2,4,6-tris(p-tert-butylphenyl)benzaldehyde as a white solid.

將如此獲得的2,4,6-三(對第三丁基苯基)苯甲醛9.76 g及2,4-二甲基吡咯5.54 g放入至反應容器中,加入甲苯200 mL及5滴三氟乙酸,於40℃下攪拌30分鐘後,加水進行攪拌,將有機層分液,利用飽和食鹽水清洗。利用硫酸鎂乾燥該有機層,於過濾後蒸餾去除溶媒。將所得的反應生成物與2,3-二氯-5,6-二氰基-1,4-苯醌(DDQ)8.81 g及甲苯200 mL放入至燒瓶中,於40℃下攪拌30分鐘。之後,加入二異丙基乙胺17.2 mL與三氟化硼二乙醚錯合物12.2 mL,於室溫下攪拌30分鐘後,加水進行攪拌。將有機層分液,利用飽和食鹽水清洗。利用硫酸鎂乾燥該有機層,於過濾後蒸餾去除溶媒。將所得的反應生成物藉由矽膠化層析法進行精製,獲得紅色粉末3.63 g。藉由1 H-NMR及LC-MS分析所得的粉末,確認了紅色粉末為作為吡咯亞甲基硼錯合物的化合物D-2。1 H-NMR(CDCl3 (d=ppm)):7.72-7.63(m, 4H), 7.47(d, 2H), 7.23-7.12(m, 8H), 5.81(s, 2H), 2.38(s, 6H), 1.57(s, 6H), 1.32(s, 9H), 1.22(s, 18H) MS(m/z)分子量:721。Put 9.76 g of 2,4,6-tris(p-tert-butylphenyl)benzaldehyde and 5.54 g of 2,4-dimethylpyrrole thus obtained into the reaction vessel, add 200 mL of toluene and 5 drops of Fluoroacetic acid was stirred at 40°C for 30 minutes, water was added and stirred, and the organic layer was separated and washed with saturated brine. The organic layer was dried with magnesium sulfate, and the solvent was distilled off after filtration. Put the obtained reaction product, 8.81 g of 2,3-dichloro-5,6-dicyano-1,4-benzoquinone (DDQ) and 200 mL of toluene into a flask, and stir at 40°C for 30 minutes . Then, 17.2 mL of diisopropylethylamine and 12.2 mL of boron trifluoride diethyl ether complex were added, and after stirring for 30 minutes at room temperature, water was added for stirring. The organic layer was separated and washed with saturated brine. The organic layer was dried with magnesium sulfate, and the solvent was distilled off after filtration. The obtained reaction product was purified by silica gel chromatography to obtain 3.63 g of red powder. The obtained powder was analyzed by 1 H-NMR and LC-MS, and it was confirmed that the red powder was compound D-2 which is a pyrromethene boron complex. 1 H-NMR(CDCl 3 (d=ppm)): 7.72-7.63(m, 4H), 7.47(d, 2H), 7.23-7.12(m, 8H), 5.81(s, 2H), 2.38(s, 6H), 1.57(s, 6H), 1.32(s, 9H), 1.22(s, 18H) MS (m/z) molecular weight: 721.

以下示出化合物D-2在溶液中的發光特性。 吸收光譜(溶媒:甲苯):λmax為513 nm 螢光光譜(溶媒:甲苯):λmax為527 nm、半值寬度為22 nm 螢光量子產率(溶媒:甲苯,激發光:460 nm):100%。The luminescence characteristics of compound D-2 in solution are shown below. Absorption spectrum (solvent: toluene): λmax is 513 nm Fluorescence spectrum (solvent: toluene): λmax is 527 nm, half-value width is 22 nm Fluorescence quantum yield (solvent: toluene, excitation light: 460 nm): 100%.

為了進一步提高純度而進行昇華精製。於玻璃管中設置裝入有化合物D-2的金屬容器,使用油擴散泵於1×10-3 Pa的壓力下、於240℃下將其加熱而使化合物D-2昇華。回收附著在玻璃管壁的固體,藉由LC-MS分析確認了純度為99%。In order to further improve the purity, sublimation purification is performed. A metal container filled with compound D-2 was set in the glass tube, and the compound D-2 was sublimated by heating it at 240° C. under a pressure of 1×10 -3 Pa using an oil diffusion pump. The solid adhering to the wall of the glass tube was recovered, and the purity of 99% was confirmed by LC-MS analysis.

下述實施例及比較例中使用的吡咯亞甲基硼錯合物是以下所示的化合物。另外,於該些吡咯亞甲基硼錯合物的甲苯溶液中測定的分子量及發光特性如表1所示。The pyrromethene boron complexes used in the following examples and comparative examples are the compounds shown below. In addition, the molecular weight and luminescence characteristics measured in the toluene solution of these pyrromethene boron complexes are shown in Table 1.

[化52]

Figure 02_image108
[化52]
Figure 02_image108

[化53]

Figure 02_image110
[化53]
Figure 02_image110

[表1] [表1] 化合物 分子量 吸收光譜 發光光譜 螢光量子產率 λmax(nm) λmax(nm) 半值寬度(nm) QY(%) D-1 589 513 526 23 100 D-2 721 513 527 22 100 D-3 607 516 531 23 93 D-4 561 510 521 23 94 D-5 563 507 519 22 92 D-6 735 516 532 24 100 D-7 649 513 526 24 100 D-8 561 507 519 22 100 D-9 801 507 518 23 100 D-10 645 517 532 23 100 D-11 448 517 532 22 95 D-12 504 513 526 23 100 D-13 601 550 572 30 100 D-14 601 558 598 30 95 D-15 533 513 527 23 100 D-16 589 503 516 23 84 D-17 338 504 518 25 90 D-18 400 508 521 24 85 [Table 1] [Table 1] Compound Molecular weight Absorption spectrum Luminous spectrum Fluorescence quantum yield λmax (nm) λmax (nm) Half-value width (nm) QY (%) D-1 589 513 526 twenty three 100 D-2 721 513 527 twenty two 100 D-3 607 516 531 twenty three 93 D-4 561 510 521 twenty three 94 D-5 563 507 519 twenty two 92 D-6 735 516 532 twenty four 100 D-7 649 513 526 twenty four 100 D-8 561 507 519 twenty two 100 D-9 801 507 518 twenty three 100 D-10 645 517 532 twenty three 100 D-11 448 517 532 twenty two 95 D-12 504 513 526 twenty three 100 D-13 601 550 572 30 100 D-14 601 558 598 30 95 D-15 533 513 527 twenty three 100 D-16 589 503 516 twenty three 84 D-17 338 504 518 25 90 D-18 400 508 521 twenty four 85

實施例1 (螢光發光元件評價) 將堆積有165 nm的作為陽極的ITO透明導電膜的玻璃基板(吉奧馬(Geomatec)(股)製造,11 Ω/□,濺鍍品)切斷成38 mm×46 mm,進行蝕刻。利用「塞米高克林(Semico clean)56」(商品名,古內化學(股)製造)對所得的基板進行15分鐘超音波清洗後,利用超純水進行清洗,並進行乾燥。Example 1 (Evaluation of Fluorescent Light-Emitting Elements) A glass substrate (manufactured by Geomatec (stock), 11 Ω/□, sputtered product) on which a 165 nm ITO transparent conductive film was deposited as an anode was cut into 38 mm×46 mm, and then etched. The resulting substrate was ultrasonically cleaned with "Semico clean 56" (trade name, manufactured by Furuuchi Chemical Co., Ltd.) for 15 minutes, washed with ultrapure water, and dried.

於即將製作元件之前對該基板進行1小時UV-臭氧處理,設置於真空蒸鍍裝置內,進行排氣直至裝置內的壓力成為5×10-4 Pa以下為止。首先,藉由電阻加熱法蒸鍍10 nm的HAT-CN6作為電洞注入層,且蒸鍍50 nm的HT-1作為電洞傳輸層。其次,將作為主體材料的H-1、另外作為摻雜劑材料的化合物D-1以摻雜濃度成為1.0重量%的方式,蒸鍍為20 nm的厚度來作為發光層。進而,使用ET-1,且使用2E-1作為施體性材料,以ET-1與2E-1的蒸鍍速度比成為1:1的方式,積層為30 nm的厚度來作為電子傳輸層。其次,於蒸鍍0.5 nm的2E-1作為電子注入層後,將鎂與銀共蒸鍍1000 nm而製成陰極,製作5 mm×5 mm見方的元件。The substrate was subjected to UV-ozone treatment for 1 hour immediately before the production of the element, set in a vacuum vapor deposition device, and exhausted until the pressure in the device became 5×10 -4 Pa or less. First, HAT-CN6 of 10 nm was evaporated as the hole injection layer by resistance heating method, and HT-1 of 50 nm was evaporated as the hole transport layer. Next, H-1 as a host material and compound D-1 as a dopant material were deposited to a thickness of 20 nm as a light-emitting layer so that the doping concentration became 1.0% by weight. Furthermore, ET-1 was used, 2E-1 was used as the donor material, and the deposition rate ratio of ET-1 to 2E-1 was 1:1, and the thickness of the stack was 30 nm as the electron transport layer. Next, after vapor-depositing 0.5 nm of 2E-1 as an electron injection layer, magnesium and silver were co-evaporated for 1000 nm to form a cathode, and a 5 mm×5 mm square element was fabricated.

使該發光元件以1000 cd/m2 發光時的發光特性是發光峰值波長為529 nm、半值寬度為26 nm、外部量子效率為4.0%。另外,耐久性是以使初始亮度成為1000 cd/m2 的電流連續通電,於成為初始亮度的90%的亮度的時間(以下,設為LT90)內進行評價。其結果,該發光元件的LT90為99小時。再者,所述中,HAT-CN6、HT-1、H-1、ET-1及2E-1分別為下述所示的化合物。When the light-emitting element was made to emit light at 1000 cd/m 2 , the emission peak wavelength was 529 nm, the half-value width was 26 nm, and the external quantum efficiency was 4.0%. In addition, the durability was evaluated by continuously energizing the current at the initial brightness of 1000 cd/m 2 within the time (hereinafter, referred to as LT90) for the brightness of 90% of the initial brightness. As a result, the LT90 of this light-emitting element was 99 hours. In addition, in the above, HAT-CN6, HT-1, H-1, ET-1, and 2E-1 are the compounds shown below, respectively.

[化54]

Figure 02_image112
[化54]
Figure 02_image112

實施例2~實施例15、比較例1~比較例3 除了使用表2中記載的化合物代替化合物D-1來作為摻雜劑材料以外,與實施例1同樣地製作發光元件並進行評價。結果如表2所示。Example 2 to Example 15, Comparative Example 1 to Comparative Example 3 A light-emitting element was produced and evaluated in the same manner as in Example 1, except that the compound described in Table 2 was used instead of the compound D-1 as the dopant material. The results are shown in Table 2.

[表2]

Figure 02_image114
[Table 2]
Figure 02_image114

參照表2可知,於實施例1~實施例15中,與比較例1~比較例3相比,於將半值寬度保持得較小的同時,外部量子效率與元件耐久性(LT90)大幅提高。據此可知,根據本發明,可獲得具備高顏色純度、高發光效率及高元件耐久性的發光元件。Referring to Table 2, it can be seen that in Examples 1 to 15, compared with Comparative Examples 1 to 3, while keeping the half-value width small, the external quantum efficiency and device durability (LT90) are greatly improved . From this, it is understood that according to the present invention, a light-emitting element having high color purity, high luminous efficiency, and high element durability can be obtained.

(熱活化延遲螢光元件評價) 實施例16 將堆積有100 nm的作為陽極的ITO透明導電膜的玻璃基板(吉奧馬(Geomatec)(股)製造,11 Ω/□,濺鍍品)切斷成38 mm×46 mm,進行蝕刻。利用「塞米高克林(Semico clean)56」(商品名,古內化學(股)製造)對所得的基板進行15分鐘超音波清洗後,利用超純水進行清洗。(Evaluation of thermally activated delayed fluorescent element) Example 16 A glass substrate (manufactured by Geomatec (stock), 11 Ω/□, sputtered product) on which a 100-nm ITO transparent conductive film was deposited as an anode was cut into 38 mm×46 mm, and then etched. The resulting substrate was ultrasonically cleaned with "Semico clean 56" (trade name, manufactured by Furuuchi Chemical Co., Ltd.) for 15 minutes, and then cleaned with ultrapure water.

於即將製作元件之前對該基板進行1小時UV-臭氧處理,設置於真空蒸鍍裝置內,進行排氣直至裝置內的真空度成為5×10-4 Pa以下為止。首先,藉由電阻加熱法蒸鍍10 nm的HAT-CN6作為電洞注入層,蒸鍍40 nm的HT-1作為電洞傳輸層。其次,將主體材料H-2、化合物D-1、及作為TADF材料的化合物H-3以重量比計成為79.5:0.5:20的方式蒸鍍為30 nm的厚度來作為發光層。進而,電子傳輸材料使用化合物ET-1,且使用2E-1作為施體性材料,以化合物ET-1與2E-1的蒸鍍速度比成為1:1的方式積層為50 nm的厚度來作為電子傳輸層。其次,於蒸鍍0.5 nm的2E-1作為電子注入層後,將鎂與銀共蒸鍍1000 nm而製成陰極,製作5 mm×5 mm見方的元件。The substrate was subjected to UV-ozone treatment for 1 hour immediately before the production of the element, set in a vacuum vapor deposition device, and exhausted until the vacuum degree in the device became 5×10 -4 Pa or less. First, HAT-CN6 of 10 nm was evaporated as the hole injection layer by resistance heating method, and HT-1 of 40 nm was evaporated as the hole transport layer. Next, the host material H-2, the compound D-1, and the compound H-3 as the TADF material were vapor-deposited to a thickness of 30 nm in a weight ratio of 79.5:0.5:20, as a light-emitting layer. Furthermore, compound ET-1 was used as the electron transport material, 2E-1 was used as the donor material, and a thickness of 50 nm was laminated so that the vapor deposition rate ratio of compound ET-1 and 2E-1 became 1:1. Electron transport layer. Next, after vapor-depositing 0.5 nm of 2E-1 as an electron injection layer, magnesium and silver were co-evaporated for 1000 nm to form a cathode, and a 5 mm×5 mm square element was fabricated.

使該發光元件以1000 cd/m2 發光時的發光特性是發光峰值波長為529 nm、半值寬度為28 nm、外部量子效率為14.2%,LT90為80小時。再者,所述中,H-2及H-3為下述所示的化合物。The emission characteristics when the light-emitting element was made to emit light at 1000 cd/m 2 were that the emission peak wavelength was 529 nm, the half-value width was 28 nm, the external quantum efficiency was 14.2%, and the LT90 was 80 hours. In addition, in the above, H-2 and H-3 are the compounds shown below.

[化55]

Figure 02_image116
[化55]
Figure 02_image116

實施例17~實施例20、比較例4~比較例6 除了使用表3中記載的化合物作為摻雜劑材料以外,與實施例16同樣地製作發光元件,並進行評價。結果如表3所示。Example 17 to Example 20, Comparative Example 4 to Comparative Example 6 Except for using the compound described in Table 3 as the dopant material, a light-emitting element was produced in the same manner as in Example 16, and evaluated. The results are shown in Table 3.

[表3]

Figure 02_image118
[table 3]
Figure 02_image118

參照表3可知,於實施例16~實施例20中,與比較例4~比較例6相比,於將半值寬度保持得較小的同時,外部量子效率與元件耐久性(LT90)大幅提高。據此可知,根據本發明,可獲得具備高顏色純度、高發光效率及高元件耐久性的發光元件。Referring to Table 3, it can be seen that in Examples 16 to 20, compared with Comparative Examples 4 to 6, while keeping the half-value width small, the external quantum efficiency and device durability (LT90) are greatly improved. . From this, it is understood that according to the present invention, a light-emitting element having high color purity, high luminous efficiency, and high element durability can be obtained.

如上所述,顯示出藉由本發明,可製作顏色純度、發光效率及元件耐久性高的發光元件。藉此,顯示出於顯示器等顯示裝置或照明裝置的製造中,可提高發光效率。As described above, it is shown that the present invention can produce a light-emitting element with high color purity, luminous efficiency, and element durability. In this way, the luminous efficiency can be improved during the manufacture of display devices such as displays or lighting devices.

(串聯型螢光發光元件評價) 實施例21 將堆積有165 nm的作為陽極的ITO透明導電膜的玻璃基板(吉奧馬(Geomatec)(股)製造,11 Ω/□,濺鍍品)切斷成38 mm×46 mm,進行蝕刻。利用「塞米高克林(Semico clean)56」(商品名,古內化學(股)製造)對所得的基板進行15分鐘超音波清洗後,利用超純水進行清洗。(Evaluation of tandem fluorescent light-emitting element) Example 21 A glass substrate (manufactured by Geomatec (stock), 11 Ω/□, sputtered product) on which a 165 nm ITO transparent conductive film was deposited as an anode was cut into 38 mm×46 mm, and then etched. The resulting substrate was ultrasonically cleaned with "Semico clean 56" (trade name, manufactured by Furuuchi Chemical Co., Ltd.) for 15 minutes, and then cleaned with ultrapure water.

於即將製作元件之前對該基板進行1小時UV-臭氧處理,設置於真空蒸鍍裝置內,進行排氣直至裝置內的真空度成為5×10-4 Pa以下為止。首先,藉由電阻加熱法蒸鍍5 nm的HAT-CN6作為電洞注入層,接著蒸鍍50 nm的HT-1作為電洞傳輸層。其次,將作為電洞阻擋層的H-1 10 nm、作為發光層的主體材料H-1與摻雜劑化合物D-1以重量比計成為99.5:0.5的方式蒸鍍為20 nm的厚度。進而,將作為電子阻擋層的ET-1積層為10 nm,將作為電子傳輸層的化合物ET-3積層為35 nm的厚度。接著,將作為n型主體的化合物ET-3與作為n型摻雜劑的金屬鋰以蒸鍍速度比成為99:1的方式積層10 nm來作為n型電荷產生層。進而,積層10 nm的HAT-CN6作為p型電荷產生層。於其上與所述同樣地形成電洞傳輸層50 nm、電洞阻擋層10 nm、發光層20 nm。進而,依次蒸鍍10 nm的ET-2作為電子阻擋層、蒸鍍35 nm的ET-3作為電子傳輸層。其次,於蒸鍍0.5 nm的2E-1作為電子注入層後,將鎂與銀共蒸鍍1000 nm而製成陰極,製作5 mm×5 mm見方的串聯型發光元件。The substrate was subjected to UV-ozone treatment for 1 hour immediately before the production of the element, set in a vacuum vapor deposition device, and exhausted until the vacuum degree in the device became 5×10 -4 Pa or less. First, 5 nm HAT-CN6 was vapor-deposited as the hole injection layer by the resistance heating method, and then 50 nm HT-1 was vapor-deposited as the hole transport layer. Next, H-1 10 nm as a hole blocking layer, host material H-1 as a light-emitting layer, and dopant compound D-1 were vapor-deposited to a thickness of 20 nm so that the weight ratio becomes 99.5:0.5. Furthermore, ET-1 as an electron blocking layer was laminated with a thickness of 10 nm, and compound ET-3 as an electron transport layer was laminated with a thickness of 35 nm. Next, the compound ET-3 as the n-type host and the metal lithium as the n-type dopant were laminated for 10 nm so that the vapor deposition rate ratio became 99:1 to form an n-type charge generation layer. Furthermore, HAT-CN6 with a thickness of 10 nm was laminated as a p-type charge generation layer. A hole transport layer of 50 nm, a hole blocking layer of 10 nm, and a light emitting layer of 20 nm were formed thereon in the same manner as described above. Furthermore, ET-2 of 10 nm was deposited as the electron blocking layer, and ET-3 of 35 nm was deposited as the electron transport layer in this order. Next, after vapor-depositing 0.5 nm of 2E-1 as an electron injection layer, magnesium and silver were co-evaporated for 1000 nm to form a cathode, and a tandem light-emitting element of 5 mm×5 mm square was fabricated.

使該發光元件以1000 cd/m2 發光時的發光特性是發光峰值波長為530 nm、半值寬度為25 nm、外部量子效率為4.3%,LT90為110小時。確認了與發光層僅一層的實施例1相比,耐久性提高。再者,所述中,ET-2及ET-3為下述所示的化合物。When the light-emitting element was made to emit light at 1000 cd/m 2 , the emission peak wavelength was 530 nm, the half-value width was 25 nm, the external quantum efficiency was 4.3%, and the LT90 was 110 hours. It was confirmed that the durability was improved compared with Example 1 in which there was only one light-emitting layer. In addition, in the above, ET-2 and ET-3 are the compounds shown below.

[化56]

Figure 02_image120
[化56]
Figure 02_image120

without

without

Figure 110101480-A0101-11-0003-3
Figure 110101480-A0101-11-0003-3

Claims (11)

一種吡咯亞甲基硼錯合物,是由通式(1)所表示:
Figure 03_image122
R1 ~R6 分別獨立地選自由氫原子、烷基、環烷基、雜環基、烯基、環烯基、炔基、羥基、硫醇基、烷氧基、烷硫基、芳基醚基、芳基硫醚基、芳基、雜芳基、胺基、矽烷基、矽氧烷基及氧硼基所組成的群組中;該些基可進一步具有取代基;其中,R1 ~R4 中的至少一個為氫原子或烷基; X1 及X2 分別獨立地選自由烷基、環烷基、雜環基、烯基、環烯基、炔基、羥基、硫醇基、烷氧基、烷硫基、芳基醚基、芳基硫醚基、芳基、雜芳基、鹵素及氰基所組成的群組中;該些基可進一步具有取代基; R7 是由下述通式(2)所表示;
Figure 03_image124
R8 ~R10 分別獨立地選自由氫原子、烷基、環烷基、雜環基、烯基、環烯基、炔基、羥基、硫醇基、烷氧基、烷硫基、芳基醚基、芳基硫醚基、芳基、雜芳基、鹵素、氰基、醛基、醯基、羧基、酯基、醯胺基、磺醯基、磺酸酯基、磺醯胺基、胺基、硝基、矽烷基、矽氧烷基、氧硼基及氧化膦基所組成的群組中;該些基可進一步具有取代基; R11 選自由烷基、環烷基、雜環基、烯基、環烯基、炔基、羥基、硫醇基、烷氧基、烷硫基、芳基醚基、芳基硫醚基、芳基、雜芳基、鹵素、氰基、醛基、醯基、羧基、酯基、醯胺基、磺醯基、磺酸酯基、磺醯胺基、胺基、硝基、矽烷基、矽氧烷基、氧硼基及氧化膦基所組成的群組中;該些基可進一步具有取代基; Ar1 為經取代或未經取代的芳基、或者經取代或未經取代的雜芳基。
A pyrromethene boron complex is represented by the general formula (1):
Figure 03_image122
R 1 to R 6 are each independently selected from a hydrogen atom, an alkyl group, a cycloalkyl group, a heterocyclic group, an alkenyl group, a cycloalkenyl group, an alkynyl group, a hydroxyl group, a thiol group, an alkoxy group, an alkylthio group, and an aryl group. Ether group, aryl sulfide group, aryl group, heteroaryl group, amine group, silyl group, siloxyalkyl group and oxyboron group; these groups may further have substituents; wherein, R 1 At least one of ~R 4 is a hydrogen atom or an alkyl group; X 1 and X 2 are each independently selected from an alkyl group, a cycloalkyl group, a heterocyclic group, an alkenyl group, a cycloalkenyl group, an alkynyl group, a hydroxyl group, and a thiol group , Alkoxy, alkylthio, aryl ether, aryl sulfide, aryl, heteroaryl, halogen and cyano; these groups may further have substituents; R 7 is It is represented by the following general formula (2);
Figure 03_image124
R 8 to R 10 are each independently selected from a hydrogen atom, an alkyl group, a cycloalkyl group, a heterocyclic group, an alkenyl group, a cycloalkenyl group, an alkynyl group, a hydroxyl group, a thiol group, an alkoxy group, an alkylthio group, and an aryl group. Ether group, aryl sulfide group, aryl group, heteroaryl group, halogen, cyano group, aldehyde group, acyl group, carboxyl group, ester group, amide group, sulfonyl group, sulfonate group, sulfonamide group, Amine group, nitro group, silyl group, siloxyalkyl group, oxyboron group and phosphine oxide group; these groups may further have substituents; R 11 is selected from the group consisting of alkyl, cycloalkyl, heterocyclic Group, alkenyl, cycloalkenyl, alkynyl, hydroxyl, thiol, alkoxy, alkylthio, aryl ether, aryl sulfide, aryl, heteroaryl, halogen, cyano, aldehyde Group, acyl group, carboxyl group, ester group, amide group, sulfonamide group, sulfonate group, sulfonamide group, amine group, nitro group, silyl group, siloxyalkyl group, oxyboron group and phosphine oxide group These groups may further have substituents; Ar 1 is a substituted or unsubstituted aryl group, or a substituted or unsubstituted heteroaryl group.
如請求項1所述的吡咯亞甲基硼錯合物,其中R11 為經取代或未經取代的芳基、或者經取代或未經取代的雜芳基。The pyrromethene boron complex according to claim 1, wherein R 11 is a substituted or unsubstituted aryl group or a substituted or unsubstituted heteroaryl group. 如請求項1或請求項2所述的吡咯亞甲基硼錯合物,其中R1 及R4 分別獨立地為氫原子或烷基。The pyrromethene boron complex according to claim 1 or claim 2, wherein R 1 and R 4 are each independently a hydrogen atom or an alkyl group. 如請求項1至請求項3中任一項所述的吡咯亞甲基硼錯合物,其中R2 及R3 為烷基。The pyrromethene boron complex according to any one of claims 1 to 3, wherein R 2 and R 3 are alkyl groups. 一種發光元件,是具有陽極、陰極、以及存在於所述陽極與所述陰極之間的發光層的元件,所述發光層藉由電能而發光,所述發光層中含有如請求項1至請求項4中任一項所述的吡咯亞甲基硼錯合物。A light-emitting element is an element having an anode, a cathode, and a light-emitting layer existing between the anode and the cathode. The light-emitting layer emits light by electric energy, and the light-emitting layer contains items such as claims 1 to The pyrromethene boron complex according to any one of Item 4. 如請求項5所述的發光元件,其中所述發光層含有第一化合物及第二化合物,所述第一化合物為熱活化延遲螢光性化合物,所述第二化合物為所述通式(1)所表示的吡咯亞甲基硼錯合物。The light-emitting element according to claim 5, wherein the light-emitting layer contains a first compound and a second compound, the first compound is a thermally activated delayed fluorescence compound, and the second compound is the general formula (1 ) Pyrromethene boron complex. 如請求項5或請求項6所述的發光元件,其中如請求項6所述的熱活化延遲螢光性化合物是於同一分子內具有供電子性部與拉電子性部的化合物。The light-emitting element according to claim 5 or 6, wherein the thermally activated delayed fluorescent compound according to claim 6 is a compound having an electron donating part and an electron withdrawing part in the same molecule. 如請求項5至請求項7中任一項所述的發光元件,其中於陽極與陰極之間具有兩層以上的發光層,於各發光層與發光層之間具有一層以上的電荷產生層。The light-emitting element according to any one of claims 5 to 7, wherein there are two or more light-emitting layers between the anode and the cathode, and one or more charge generation layers are provided between each light-emitting layer and the light-emitting layer. 如請求項8所述的發光元件,其中所述電荷產生層中含有通式(4)所表示的啡啉衍生物:
Figure 03_image126
所述通式(4)中,Ar2 選自由p價芳香族烴基及p價雜芳香環基所組成的群組中;p為1~3的自然數;R15 ~R22 分別可相同亦可不同,選自由氫原子、烷基、環烷基、雜環基、芳基、雜芳基所組成的群組中;Ar2 中,p個啡啉基的取代位置為任意位置。
The light-emitting element according to claim 8, wherein the charge generation layer contains the phenanthroline derivative represented by the general formula (4):
Figure 03_image126
In the general formula (4), Ar 2 is selected from the group consisting of a p-valent aromatic hydrocarbon group and a p-valent heteroaromatic ring group; p is a natural number from 1 to 3; R 15 to R 22 may be the same or the same. It may be different, and is selected from the group consisting of a hydrogen atom, an alkyl group, a cycloalkyl group, a heterocyclic group, an aryl group, and a heteroaryl group; in Ar 2 , the substitution position of p phenanthroline groups is any position.
一種顯示裝置,包含如請求項5至請求項9中任一項所述的發光元件。A display device comprising the light-emitting element according to any one of claim 5 to claim 9. 一種照明裝置,包含如請求項5至請求項9中任一項所述的發光元件。A lighting device comprising the light-emitting element according to any one of claim 5 to claim 9.
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