TW202127641A - Package structure with FOWBCSP CMOS chip module where most of wires are hidden in the plate aperture and capable of shortening manufacturing time with reduced cost - Google Patents
Package structure with FOWBCSP CMOS chip module where most of wires are hidden in the plate aperture and capable of shortening manufacturing time with reduced cost Download PDFInfo
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Abstract
Description
本發明係有關於半導體封裝結構,尤其是一種具有FOWBCSP CMOS晶片型態的封裝結構。 The present invention relates to a semiconductor packaging structure, in particular to a packaging structure with FOWBCSP CMOS chip type.
習知技術的半導體晶片封裝結構中,係將晶片的接點置於上方,基板的接點也置於上方,然後再應用裸露的導線應用晶片的接點連接基板的接點。另外基板上則形成貫穿孔以填注導電材料,使得基板的接點晶由該填注有導電材料的貫穿孔而導引到基板的下方。然後電路板則位在該基板的下方,使得該電路板上的接點與基板的接點相連接,整體上達成電連接的目的。 In the conventional semiconductor chip packaging structure, the contacts of the chip are placed on the top, and the contacts of the substrate are also placed on the top, and then the contacts of the chip are used to connect the contacts of the substrate with bare wires. In addition, a through hole is formed on the substrate to fill the conductive material, so that the contact crystal of the substrate is guided to the bottom of the substrate through the through hole filled with the conductive material. Then the circuit board is located below the substrate, so that the contacts on the circuit board are connected to the contacts on the substrate, and the purpose of electrical connection is achieved as a whole.
封裝時,則必須把晶片及基板完全包覆連接,所以必須封裝一較大之區域以避免導線裸露在外,所以封裝的成本較高且時間也較長。 When packaging, the chip and the substrate must be completely covered and connected, so a larger area must be packaged to prevent the wires from being exposed, so the packaging cost is higher and the time is longer.
另外基板上必須形成多個貫穿孔分別灌注導電材料,這些貫穿孔必須分別形成,彼此不可互相連通以避免短路,所以製造上相當耗時、耗工,也增加了整體的製造成本。 In addition, a plurality of through holes must be formed on the substrate to be respectively filled with conductive materials. These through holes must be formed separately and cannot communicate with each other to avoid short circuits. Therefore, the manufacturing is quite time-consuming and labor-consuming, which also increases the overall manufacturing cost.
故本案希望提出一種嶄新的具有FOWBCSP CMOS晶片型態的封裝結構,以解決上述先前技術上的缺陷。 Therefore, this case hopes to propose a new package structure with FOWBCSP CMOS chip type to solve the above-mentioned defects in the prior art.
所以本發明的目的係為解決上述習知技術上的問題,本發明中提出一種具有FOWBCSP CMOS晶片型態的封裝結構,在基板上只需要形成單一個板孔,而使得多個導線同時通過該板孔,不若傳統的結構必須形成多個板孔,所以製造期間縮短而且成本也降低。本案中可在該基板的上方配置接點並經由導線連接CMOS晶片之接點;或是在該基板的上方及下方配置互相連接之上接點及下接點,而經由該下接點連接該CMOS晶片之接點;或是將該基板的至少一側延伸到該CMOS晶片外側,且在該基板下方配置下接點,而經由該下接點同時連接到該CMOS晶片以及位在該基板下方的電路板之接點。再者本案在封裝時僅需要對有可能裸露導線的少數區域進行封裝,而不必像傳統的結構及封裝的區域片不整個晶片及基板的上方,所以本案的封裝方式可以節省成本及工時。再者因為導線的長度較短而且大部分隱藏在板孔內部,所以不至於造成導線裸露,而導致其他危害的問題。 Therefore, the purpose of the present invention is to solve the above-mentioned conventional technical problems. In the present invention, a package structure with FOWBCSP CMOS chip type is proposed. Only a single plate hole needs to be formed on the substrate, so that multiple wires can pass through the same at the same time. The plate hole is not required to form multiple plate holes in the traditional structure, so the manufacturing period is shortened and the cost is also reduced. In this case, contacts can be arranged above the substrate and connected to the contacts of the CMOS chip via wires; or above and below the substrate are arranged to connect the upper and lower contacts, and the lower contacts are connected to the CMOS chip contact; or extend at least one side of the substrate to the outside of the CMOS chip, and a lower contact is arranged under the substrate, and the lower contact is simultaneously connected to the CMOS chip and located under the substrate The contact point of the circuit board. Furthermore, in this case, only a few areas where the wires may be exposed are required to be packaged, instead of covering the entire chip and substrate as in the traditional structure and packaging area. Therefore, the packaging method in this case can save cost and man-hours. Furthermore, because the length of the wire is short and most of it is hidden inside the board hole, it will not cause the wire to be exposed and cause other hazards.
為達到上述目的本發明中提出一種具有FOWBCSP CMOS晶片型態的封裝結構,包含一CMOS晶片,該CMOS晶片之上方包含接點及一光感測區;兩擋堤位於該CMOS晶片的該光感測區的上方的兩側;一基板置於該CMOS晶片之上方,其中該基板具有一穿透之板孔,該板孔係對應該CMOS晶片之接點及該光感測區的位置,而使得光線可以經過該板孔照射該光感測區,而該基板的上方形成接點;由導線經過該基板之板孔連接該基板之接點及該CMOS晶片之接點;一玻璃位在該CMOS晶片的該光感測區的上方;以及其中該基板之該板孔形成一第二封裝結構係應用膠材密封該板孔而形成;其中該第二封裝結構並不覆蓋該玻璃,以使得該玻璃外露,因此外部的光線可以直接經由該玻璃照射該CMOS晶片;其中該基板上方的接點具有導接 球。 In order to achieve the above objective, the present invention proposes a package structure with FOWBCSP CMOS chip type, which includes a CMOS chip. The upper part of the CMOS chip includes contacts and a light sensing area; two barriers are located on the light sensing area of the CMOS chip. The upper two sides of the measurement area; a substrate is placed above the CMOS chip, wherein the substrate has a through hole, and the hole corresponds to the contact point of the CMOS chip and the position of the light sensing area, and The light can pass through the hole to illuminate the light sensing area, and a contact is formed above the substrate; a wire passes through the hole of the substrate to connect the contact of the substrate and the contact of the CMOS chip; a glass is located on the Above the light sensing area of the CMOS chip; and where the plate hole of the substrate forms a second package structure which is formed by sealing the plate hole with glue; where the second package structure does not cover the glass, so that The glass is exposed, so external light can directly illuminate the CMOS chip through the glass; wherein the contact point above the substrate has a conductive connection ball.
本案尚提出一種具有FOWBCSP CMOS晶片型態的封裝結構,包含一CMOS晶片,該CMOS晶片之上方包含接點及光感測區;兩擋堤,位於該CMOS晶片的該光感測區的上方的兩側;一基板置於該CMOS晶片之上方,其中該基板具有一穿透之板孔,該板孔係對應該CMOS晶片之該光感測區及該兩擋堤的位置,而使得光線可以穿過該板孔照射該光感測區;其中該基板的上方形成上接點,且該基板的下方形成下接點;其中該上接點經由位在該基板內部的內導線連接到一對應之下接點;該基板經由該下接點連接該CMOS晶片上對應之接點;其中該基板上方的上接點具有導接球;以及一玻璃,係置於該兩擋堤的上端,且該玻璃與該CMOS晶片之間形成一空隙;因此外部的光線可以直接經由該玻璃照射該CMOS晶片。 This case also proposes a package structure with FOWBCSP CMOS chip type, including a CMOS chip, the upper part of the CMOS chip includes contacts and a light sensing area; two barriers, located above the light sensing area of the CMOS chip On both sides; a substrate is placed above the CMOS chip, wherein the substrate has a through hole, the hole corresponds to the position of the light sensing area of the CMOS chip and the two barriers, so that light can be The light sensing area is irradiated through the plate hole; wherein an upper contact is formed above the substrate, and a lower contact is formed below the substrate; wherein the upper contact is connected to a corresponding corresponding via an inner wire located inside the substrate Lower contact; the substrate is connected to the corresponding contact on the CMOS chip via the lower contact; wherein the upper contact above the substrate has a conductive ball; and a glass is placed on the upper ends of the two barriers, and A gap is formed between the glass and the CMOS chip; therefore, external light can directly illuminate the CMOS chip through the glass.
本案尚提出一種具有FOWBCSP CMOS晶片型態的封裝結構,包含一CMOS晶片,該CMOS晶片之上方包含接點及光感測區;兩擋堤,位於該CMOS晶片的該光感測區的上方的兩側;一基板置於該CMOS晶片之上方,其中該基板具有一穿透之板孔,該板孔係對應該CMOS晶片之該光感測區及該兩擋堤的位置,而使得光線可以穿過該板孔照射該光感測區;其中該基板的下方形成下接點;該基板經由該下接點連接該CMOS晶片上對應之接點;其中該基板的至少一側及該至少一側所對應之下接點延伸到該CMOS晶片的外側;以及一玻璃,係置於該兩擋堤的上端,且該玻璃與該CMOS晶片之間形成一空隙;因此外部的光線可以直接經由該玻璃照射該CMOS晶片。 This case also proposes a package structure with FOWBCSP CMOS chip type, including a CMOS chip, the upper part of the CMOS chip includes contacts and a light sensing area; two barriers, located above the light sensing area of the CMOS chip On both sides; a substrate is placed above the CMOS chip, wherein the substrate has a through hole, the hole corresponds to the position of the light sensing area of the CMOS chip and the two barriers, so that light can be The light sensing area is irradiated through the plate hole; wherein a lower contact is formed under the substrate; the substrate is connected to the corresponding contact on the CMOS chip through the lower contact; wherein at least one side of the substrate and the at least one The lower contact corresponding to the side extends to the outside of the CMOS chip; and a glass is placed on the upper ends of the two barriers, and a gap is formed between the glass and the CMOS chip; therefore, external light can directly pass through the CMOS chip. The glass irradiates the CMOS wafer.
由下文的說明可更進一步瞭解本發明的特徵及其優點,閱讀時並請參 考附圖。 The features and advantages of the present invention can be further understood from the following description. Please refer to the Consider the attached drawings.
1‧‧‧第一封裝結構 1‧‧‧The first package structure
2‧‧‧第二封裝結構 2‧‧‧Second package structure
11‧‧‧接點 11‧‧‧Contact
12‧‧‧光感測區 12‧‧‧Light sensing area
20‧‧‧基板 20‧‧‧Substrate
21‧‧‧接點 21‧‧‧Contact
22‧‧‧板孔 22‧‧‧Plate hole
23‧‧‧上接點 23‧‧‧Upper contact
24‧‧‧下接點 24‧‧‧Lower contact
30‧‧‧導接球 30‧‧‧Guiding the ball
40‧‧‧電路板 40‧‧‧Circuit board
41‧‧‧接點 41‧‧‧Contact
42‧‧‧穿孔 42‧‧‧Perforation
60‧‧‧導線 60‧‧‧Wire
65‧‧‧內導線 65‧‧‧Inner wire
70‧‧‧CMOS晶片 70‧‧‧CMOS chip
81‧‧‧擋堤 81‧‧‧Block Dike
90‧‧‧玻璃 90‧‧‧Glass
95‧‧‧空隙 95‧‧‧Gap
200‧‧‧膠材 200‧‧‧Glue
300‧‧‧封裝結構 300‧‧‧Packaging structure
圖1A顯示本案之第一實施例之CMOS晶片、基板及電路板之分解示意圖。 FIG. 1A shows an exploded schematic diagram of the CMOS chip, substrate, and circuit board of the first embodiment of the present application.
圖1B顯示本案之第一實施例之元件組合之截面示意圖。 FIG. 1B shows a schematic cross-sectional view of the component assembly of the first embodiment of the present application.
圖1C顯示圖1B之元件組合之應用例之截面示意圖。 FIG. 1C shows a schematic cross-sectional view of an application example of the component combination of FIG. 1B.
圖2A顯示本案之第二實施例之CMOS晶片、基板及電路板之分解示意圖。 2A shows an exploded schematic diagram of the CMOS chip, substrate and circuit board of the second embodiment of the present application.
圖2B顯示本案之第二實施例之元件組合之截面示意圖。 2B shows a schematic cross-sectional view of the component combination of the second embodiment of the present application.
圖2C顯示圖2B之元件組合之應用例之截面示意圖。 FIG. 2C shows a schematic cross-sectional view of an application example of the component combination of FIG. 2B.
圖3A顯示本案之第三實施例之CMOS晶片、基板及電路板之分解示意圖。 FIG. 3A shows an exploded schematic diagram of the CMOS chip, substrate and circuit board of the third embodiment of the present application.
圖3B顯示本案之第三實施例之元件組合之截面示意圖。 FIG. 3B shows a schematic cross-sectional view of the component combination of the third embodiment of the present application.
圖3C顯示圖3B之元件組合之應用例之截面示意圖。 FIG. 3C shows a schematic cross-sectional view of an application example of the component combination of FIG. 3B.
圖4A顯示本案之第四實施例之CMOS晶片、基板及電路板之分解示意圖。 4A shows an exploded schematic diagram of the CMOS chip, substrate and circuit board of the fourth embodiment of the present application.
圖4B顯示本案之第四實施例之元件組合之截面示意圖。 FIG. 4B shows a schematic cross-sectional view of the component assembly of the fourth embodiment of the present application.
圖4C顯示圖4B之元件組合之應用例之截面示意圖。 4C shows a schematic cross-sectional view of an application example of the component combination of FIG. 4B.
茲謹就本案的結構組成,及所能產生的功效與優點,配合圖式,舉本案之一較佳實施例詳細說明如下。 With regard to the structural composition of this case, and the effects and advantages that can be produced, in conjunction with the drawings, a preferred embodiment of this case is described in detail as follows.
請參考圖1A至圖1C所示,顯示本發明之具有FOWBCSP CMOS晶片型態
的封裝結構300之第一實施例,包含下列元件:
Please refer to FIGS. 1A to 1C, which show the FOWBCSP CMOS chip type of the present invention
The first embodiment of the
一CMOS晶片70,該CMOS晶片70之上方包含接點11及光感測區12。
A
一第一封裝結構1位在該CMOS晶片70下方與側邊。
A
兩擋堤81,位於該CMOS晶片70的該光感測區12的上方的兩側。
Two
一基板20置於該CMOS晶片70之上方,其中該基板20具有一穿透之板孔22,該板孔22係對應該CMOS晶片70之接點11及該光感測區12之位置,而使得光線可以經過該板孔22照射該光感測區12。而該基板20的上方形成接點21。由導線60經過該基板20之板孔22連接該基板20之接點21及該CMOS晶片70之接點11。
A
一玻璃90位在該CMOS晶片70的該光感測區12的上方,該玻璃90係置於該兩擋堤81之間。
A
其中該基板20之該板孔22形成一第二封裝結構2係應用膠材200密封該板孔22而形成,而並不覆蓋該玻璃90,以使得該玻璃90外露,因此外部的光線可以直接經由該玻璃90照射該CMOS晶片70。
The
其中該基板20上方的接點21具有導接球30(該導接球30如錫球或焊球)。
The
如圖1C所示,應用時該基板20的上方係配置一電路板40,其中該電路板40為軟板,且該電路板40上形成一穿透之穿孔42,該穿孔42的位置係對應於該玻璃90,而使得外部的光線可以經由該穿孔42穿透該玻璃90而照射該CMOS晶片70。其中該基板20上方的接點21上的導接球30係接引到該電路板40上的接點41,以形成電連通。
As shown in FIG. 1C, a
圖2A至圖2C顯示本案之第二實施例,在本實施例中與上述實施例相同的元件以相同的符號表示,並且具有相同的功能,故不再贅述其細節。下 文中僅說明其差異處。 2A to 2C show the second embodiment of this case. In this embodiment, the same elements as the above-mentioned embodiments are represented by the same symbols and have the same functions, so the details are not repeated here. Down Only the differences are explained in the article.
在本實施例中,其中該玻璃90係置於該兩擋堤81的上端,且該玻璃90與該CMOS晶片70之間形成一空隙95。
In this embodiment, the
如圖2C所示,應用時該基板20的上方係配置一電路板40。該基板20上方的接點21上的導接球30係接引到該電路板40上的接點41,以形成電連通。
As shown in FIG. 2C, a
圖3A至圖3C顯示本案之第三實施例,係不配置導線60,而直接在該基板20下方形成下接點24用於對接該CMOS晶片70上方的接點11。本實施例包含下列元件:
FIGS. 3A to 3C show the third embodiment of the present invention. The
一CMOS晶片70,該CMOS晶片70之上方包含接點11及光感測區12。
A
一第一封裝結構1位在該CMOS晶片70下方與側邊。
A
兩擋堤81,位於該CMOS晶片70的該光感測區12的上方的兩側。
Two
一基板20置於該CMOS晶片70之上方,其中該基板20具有一穿透之板孔22,該板孔22係對應該CMOS晶片70之該光感測區12及該兩擋堤81的位置,而使得光線可以經過該板孔22照射該光感測區12;其中該基板20的上方形成上接點23,且該基板20的下方形成下接點24。其中該上接點23經由位在該基板20內部的內導線65連接到一對應之下接點24。該基板20經由該下接點24連接該CMOS晶片70上對應之接點11。
A
一玻璃90,係置於該兩擋堤81的上端,且該玻璃90與該CMOS晶片70之間形成一空隙95。
A
因此外部的光線可以直接經由該玻璃90照射該CMOS晶片70。
Therefore, external light can directly illuminate the
其中該基板20上方的上接點23具有導接球30(該導接球30如錫球或焊球)。
The
如圖3C所示,應用時該基板20的上方係配置一電路板40,其中該電路板40為軟板,且該電路板40上形成一穿透之穿孔42,該穿孔42的位置係對應於該玻璃90,而使得外部的光線可以經由該穿孔42穿透該玻璃90而照射該CMOS晶片70。其中該基板20上方的接點21上的導接球30係接引到該電路板40上的接點41,以形成電連通。
As shown in FIG. 3C, a
圖4A至圖4C顯示本案之第四實施例,係將該基板20延伸到該CMOS晶片70的外側,並在該基板20下方形成下接點24用於連接該CMOS晶片70上方的接點11、以及電路板40上的接點41。本實施例包含下列元件:
4A to 4C show the fourth embodiment of the present case, which is to extend the
一CMOS晶片70,該CMOS晶片70之上方包含接點11及光感測區12。
A
一第一封裝結構1位在該CMOS晶片70下方與側邊。
A
兩擋堤81,位於該CMOS晶片70的該光感測區12的上方的兩側。
Two
一基板20置於該CMOS晶片70之上方,其中該基板20具有一穿透之板孔22,該板孔22係對應該CMOS晶片70之該光感測區12及該兩擋堤81的位置,而使得光線可以經過該板孔22照射該光感測區12。其中該基板20的下方形成下接點24。該基板20經由該下接點24連接該CMOS晶片70上對應之接點11。
A
其中該基板20的至少一側及該至少一側所對應之下接點24延伸到該CMOS晶片70的外側。
At least one side of the
一玻璃90,係置於該兩擋堤81的上端,且該玻璃90與該CMOS晶片70之間形成一空隙95。
A
因此外部的光線可以直接經由該玻璃90照射該CMOS晶片70。
Therefore, external light can directly illuminate the
如圖4C所示,應用時該基板20的下方係配置一電路板40,其中該基板20上延伸到該CMOS晶片70外側的下接點24係連接到該電路板40上的接點
41,使得該電路板40與該CMOS晶片70之間形成電連通。
As shown in FIG. 4C, a
本案也可以應用多個CMOS晶片70互相並排以形成上述的封裝結構,其餘結構同於上述各實施例,因此不再贅述其細節。
In this case, a plurality of
本案的優點為在基板上只需要形成單一個板孔,而使得多個導線同時通過該板孔,不若傳統的結構必須形成多個板孔,所以製造期間縮短而且成本也降低。本案中可在該基板的上方配置接點並經由導線連接CMOS晶片之接點;或是在該基板的上方及下方配置互相連接之上接點及下接點,而經由該下接點連接該CMOS晶片之接點;或是將該基板的至少一側延伸到該CMOS晶片外側,且在該基板下方配置下接點,而經由該下接點同時連接到該CMOS晶片以及位在該基板下方的電路板之接點。再者本案在封裝時僅需要對有可能裸露導線的少數區域進行封裝,而不必像傳統的結構及封裝的區域片不整個晶片及基板的上方,所以本案的封裝方式可以節省成本及工時。再者因為導線的長度較短而且大部分隱藏在板孔內部,所以不至於造成導線裸露,而導致其他危害的問題。 The advantage of this case is that only a single plate hole needs to be formed on the substrate, and multiple wires pass through the plate hole at the same time, instead of forming multiple plate holes in the traditional structure, the manufacturing period is shortened and the cost is also reduced. In this case, contacts can be arranged above the substrate and connected to the contacts of the CMOS chip via wires; or above and below the substrate are arranged to connect the upper and lower contacts, and the lower contacts are connected to the CMOS chip contact; or extend at least one side of the substrate to the outside of the CMOS chip, and a lower contact is arranged under the substrate, and the lower contact is simultaneously connected to the CMOS chip and located under the substrate The contact point of the circuit board. Furthermore, in this case, only a few areas where the wires may be exposed are required to be packaged, instead of covering the entire chip and substrate as in the traditional structure and packaging area. Therefore, the packaging method in this case can save cost and man-hours. Furthermore, because the length of the wire is short and most of it is hidden inside the board hole, it will not cause the wire to be exposed and cause other hazards.
綜上所述,本案人性化之體貼設計,相當符合實際需求。其具體改進現有缺失,相較於習知技術明顯具有突破性之進步優點,確實具有功效之增進,且非易於達成。本案未曾公開或揭露於國內與國外之文獻與市場上,已符合專利法規定。 In summary, the humanized and considerate design of this case is quite in line with actual needs. Compared with the conventional technology, the specific improvement of the existing defects is obviously a breakthrough advantage, and it does have an increase in efficacy, and it is not easy to achieve. This case has not been disclosed or disclosed in domestic and foreign documents and markets, and it has complied with the provisions of the Patent Law.
上列詳細說明係針對本發明之一可行實施例之具體說明,惟該實施例並非用以限制本發明之專利範圍,凡未脫離本發明技藝精神所為之等效實施或變更,均應包含於本案之專利範圍中。 The above detailed description is a specific description of a possible embodiment of the present invention, but this embodiment is not intended to limit the scope of the patent of the present invention. Any equivalent implementation or modification that does not deviate from the technical spirit of the present invention should be included in In the scope of the patent in this case.
1‧‧‧第一封裝結構 1‧‧‧The first package structure
2‧‧‧第二封裝結構 2‧‧‧Second package structure
11‧‧‧接點 11‧‧‧Contact
12‧‧‧光感測區 12‧‧‧Light sensing area
20‧‧‧基板 20‧‧‧Substrate
30‧‧‧導接球 30‧‧‧Guiding the ball
60‧‧‧導線 60‧‧‧Wire
70‧‧‧CMOS晶片 70‧‧‧CMOS chip
81‧‧‧擋堤 81‧‧‧Block Dike
90‧‧‧玻璃 90‧‧‧Glass
21‧‧‧接點 21‧‧‧Contact
22‧‧‧板孔 22‧‧‧Plate hole
200‧‧‧膠材 200‧‧‧Glue
300‧‧‧封裝結構 300‧‧‧Packaging structure
Claims (16)
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TW108148702A TW202127641A (en) | 2019-12-31 | 2019-12-31 | Package structure with FOWBCSP CMOS chip module where most of wires are hidden in the plate aperture and capable of shortening manufacturing time with reduced cost |
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Publication Number | Publication Date |
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