TW202127641A - Package structure with FOWBCSP CMOS chip module where most of wires are hidden in the plate aperture and capable of shortening manufacturing time with reduced cost - Google Patents

Package structure with FOWBCSP CMOS chip module where most of wires are hidden in the plate aperture and capable of shortening manufacturing time with reduced cost Download PDF

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TW202127641A
TW202127641A TW108148702A TW108148702A TW202127641A TW 202127641 A TW202127641 A TW 202127641A TW 108148702 A TW108148702 A TW 108148702A TW 108148702 A TW108148702 A TW 108148702A TW 202127641 A TW202127641 A TW 202127641A
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cmos chip
substrate
package structure
glass
fowbcsp
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TW108148702A
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Chinese (zh)
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陳石磯
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杭天創新科技有限公司
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Abstract

A package structure with FOWBCSP CMOS chip module comprises a CMOS chip having joints and a light sensing area on the upper side thereof; two baffles located on both sides on the top of the light sensing area; a substrate placed on the CMOS chip and having a perforated plate aperture corresponding to the position of joints and the light sensing area of the CMOS chip, so that the light beam can pass through the plate aperture to illuminate the light sensing area; a glass located above the light sensing area of the CMOS chip, through which external light directly illuminates the CMOS chip. The present invention can arrange joints on the top of the substrate and connect the joints of the CMOS chip via wires; or arrange the upper and lower joints connected to each other above and under the substrate, whereby the lower joints is connected to joints of the CMOS chip; or at least one side of the substrate is extended to the outside of the CMOS chip, and lower joints can be arranged below the substrate, and the lower joints can simultaneously connect to the CMOS chip and joints of the circuit board located under the substrate.

Description

具有FOWBCSP CMOS晶片型態的封裝結構 Package structure with FOWBCSP CMOS chip type

本發明係有關於半導體封裝結構,尤其是一種具有FOWBCSP CMOS晶片型態的封裝結構。 The present invention relates to a semiconductor packaging structure, in particular to a packaging structure with FOWBCSP CMOS chip type.

習知技術的半導體晶片封裝結構中,係將晶片的接點置於上方,基板的接點也置於上方,然後再應用裸露的導線應用晶片的接點連接基板的接點。另外基板上則形成貫穿孔以填注導電材料,使得基板的接點晶由該填注有導電材料的貫穿孔而導引到基板的下方。然後電路板則位在該基板的下方,使得該電路板上的接點與基板的接點相連接,整體上達成電連接的目的。 In the conventional semiconductor chip packaging structure, the contacts of the chip are placed on the top, and the contacts of the substrate are also placed on the top, and then the contacts of the chip are used to connect the contacts of the substrate with bare wires. In addition, a through hole is formed on the substrate to fill the conductive material, so that the contact crystal of the substrate is guided to the bottom of the substrate through the through hole filled with the conductive material. Then the circuit board is located below the substrate, so that the contacts on the circuit board are connected to the contacts on the substrate, and the purpose of electrical connection is achieved as a whole.

封裝時,則必須把晶片及基板完全包覆連接,所以必須封裝一較大之區域以避免導線裸露在外,所以封裝的成本較高且時間也較長。 When packaging, the chip and the substrate must be completely covered and connected, so a larger area must be packaged to prevent the wires from being exposed, so the packaging cost is higher and the time is longer.

另外基板上必須形成多個貫穿孔分別灌注導電材料,這些貫穿孔必須分別形成,彼此不可互相連通以避免短路,所以製造上相當耗時、耗工,也增加了整體的製造成本。 In addition, a plurality of through holes must be formed on the substrate to be respectively filled with conductive materials. These through holes must be formed separately and cannot communicate with each other to avoid short circuits. Therefore, the manufacturing is quite time-consuming and labor-consuming, which also increases the overall manufacturing cost.

故本案希望提出一種嶄新的具有FOWBCSP CMOS晶片型態的封裝結構,以解決上述先前技術上的缺陷。 Therefore, this case hopes to propose a new package structure with FOWBCSP CMOS chip type to solve the above-mentioned defects in the prior art.

所以本發明的目的係為解決上述習知技術上的問題,本發明中提出一種具有FOWBCSP CMOS晶片型態的封裝結構,在基板上只需要形成單一個板孔,而使得多個導線同時通過該板孔,不若傳統的結構必須形成多個板孔,所以製造期間縮短而且成本也降低。本案中可在該基板的上方配置接點並經由導線連接CMOS晶片之接點;或是在該基板的上方及下方配置互相連接之上接點及下接點,而經由該下接點連接該CMOS晶片之接點;或是將該基板的至少一側延伸到該CMOS晶片外側,且在該基板下方配置下接點,而經由該下接點同時連接到該CMOS晶片以及位在該基板下方的電路板之接點。再者本案在封裝時僅需要對有可能裸露導線的少數區域進行封裝,而不必像傳統的結構及封裝的區域片不整個晶片及基板的上方,所以本案的封裝方式可以節省成本及工時。再者因為導線的長度較短而且大部分隱藏在板孔內部,所以不至於造成導線裸露,而導致其他危害的問題。 Therefore, the purpose of the present invention is to solve the above-mentioned conventional technical problems. In the present invention, a package structure with FOWBCSP CMOS chip type is proposed. Only a single plate hole needs to be formed on the substrate, so that multiple wires can pass through the same at the same time. The plate hole is not required to form multiple plate holes in the traditional structure, so the manufacturing period is shortened and the cost is also reduced. In this case, contacts can be arranged above the substrate and connected to the contacts of the CMOS chip via wires; or above and below the substrate are arranged to connect the upper and lower contacts, and the lower contacts are connected to the CMOS chip contact; or extend at least one side of the substrate to the outside of the CMOS chip, and a lower contact is arranged under the substrate, and the lower contact is simultaneously connected to the CMOS chip and located under the substrate The contact point of the circuit board. Furthermore, in this case, only a few areas where the wires may be exposed are required to be packaged, instead of covering the entire chip and substrate as in the traditional structure and packaging area. Therefore, the packaging method in this case can save cost and man-hours. Furthermore, because the length of the wire is short and most of it is hidden inside the board hole, it will not cause the wire to be exposed and cause other hazards.

為達到上述目的本發明中提出一種具有FOWBCSP CMOS晶片型態的封裝結構,包含一CMOS晶片,該CMOS晶片之上方包含接點及一光感測區;兩擋堤位於該CMOS晶片的該光感測區的上方的兩側;一基板置於該CMOS晶片之上方,其中該基板具有一穿透之板孔,該板孔係對應該CMOS晶片之接點及該光感測區的位置,而使得光線可以經過該板孔照射該光感測區,而該基板的上方形成接點;由導線經過該基板之板孔連接該基板之接點及該CMOS晶片之接點;一玻璃位在該CMOS晶片的該光感測區的上方;以及其中該基板之該板孔形成一第二封裝結構係應用膠材密封該板孔而形成;其中該第二封裝結構並不覆蓋該玻璃,以使得該玻璃外露,因此外部的光線可以直接經由該玻璃照射該CMOS晶片;其中該基板上方的接點具有導接 球。 In order to achieve the above objective, the present invention proposes a package structure with FOWBCSP CMOS chip type, which includes a CMOS chip. The upper part of the CMOS chip includes contacts and a light sensing area; two barriers are located on the light sensing area of the CMOS chip. The upper two sides of the measurement area; a substrate is placed above the CMOS chip, wherein the substrate has a through hole, and the hole corresponds to the contact point of the CMOS chip and the position of the light sensing area, and The light can pass through the hole to illuminate the light sensing area, and a contact is formed above the substrate; a wire passes through the hole of the substrate to connect the contact of the substrate and the contact of the CMOS chip; a glass is located on the Above the light sensing area of the CMOS chip; and where the plate hole of the substrate forms a second package structure which is formed by sealing the plate hole with glue; where the second package structure does not cover the glass, so that The glass is exposed, so external light can directly illuminate the CMOS chip through the glass; wherein the contact point above the substrate has a conductive connection ball.

本案尚提出一種具有FOWBCSP CMOS晶片型態的封裝結構,包含一CMOS晶片,該CMOS晶片之上方包含接點及光感測區;兩擋堤,位於該CMOS晶片的該光感測區的上方的兩側;一基板置於該CMOS晶片之上方,其中該基板具有一穿透之板孔,該板孔係對應該CMOS晶片之該光感測區及該兩擋堤的位置,而使得光線可以穿過該板孔照射該光感測區;其中該基板的上方形成上接點,且該基板的下方形成下接點;其中該上接點經由位在該基板內部的內導線連接到一對應之下接點;該基板經由該下接點連接該CMOS晶片上對應之接點;其中該基板上方的上接點具有導接球;以及一玻璃,係置於該兩擋堤的上端,且該玻璃與該CMOS晶片之間形成一空隙;因此外部的光線可以直接經由該玻璃照射該CMOS晶片。 This case also proposes a package structure with FOWBCSP CMOS chip type, including a CMOS chip, the upper part of the CMOS chip includes contacts and a light sensing area; two barriers, located above the light sensing area of the CMOS chip On both sides; a substrate is placed above the CMOS chip, wherein the substrate has a through hole, the hole corresponds to the position of the light sensing area of the CMOS chip and the two barriers, so that light can be The light sensing area is irradiated through the plate hole; wherein an upper contact is formed above the substrate, and a lower contact is formed below the substrate; wherein the upper contact is connected to a corresponding corresponding via an inner wire located inside the substrate Lower contact; the substrate is connected to the corresponding contact on the CMOS chip via the lower contact; wherein the upper contact above the substrate has a conductive ball; and a glass is placed on the upper ends of the two barriers, and A gap is formed between the glass and the CMOS chip; therefore, external light can directly illuminate the CMOS chip through the glass.

本案尚提出一種具有FOWBCSP CMOS晶片型態的封裝結構,包含一CMOS晶片,該CMOS晶片之上方包含接點及光感測區;兩擋堤,位於該CMOS晶片的該光感測區的上方的兩側;一基板置於該CMOS晶片之上方,其中該基板具有一穿透之板孔,該板孔係對應該CMOS晶片之該光感測區及該兩擋堤的位置,而使得光線可以穿過該板孔照射該光感測區;其中該基板的下方形成下接點;該基板經由該下接點連接該CMOS晶片上對應之接點;其中該基板的至少一側及該至少一側所對應之下接點延伸到該CMOS晶片的外側;以及一玻璃,係置於該兩擋堤的上端,且該玻璃與該CMOS晶片之間形成一空隙;因此外部的光線可以直接經由該玻璃照射該CMOS晶片。 This case also proposes a package structure with FOWBCSP CMOS chip type, including a CMOS chip, the upper part of the CMOS chip includes contacts and a light sensing area; two barriers, located above the light sensing area of the CMOS chip On both sides; a substrate is placed above the CMOS chip, wherein the substrate has a through hole, the hole corresponds to the position of the light sensing area of the CMOS chip and the two barriers, so that light can be The light sensing area is irradiated through the plate hole; wherein a lower contact is formed under the substrate; the substrate is connected to the corresponding contact on the CMOS chip through the lower contact; wherein at least one side of the substrate and the at least one The lower contact corresponding to the side extends to the outside of the CMOS chip; and a glass is placed on the upper ends of the two barriers, and a gap is formed between the glass and the CMOS chip; therefore, external light can directly pass through the CMOS chip. The glass irradiates the CMOS wafer.

由下文的說明可更進一步瞭解本發明的特徵及其優點,閱讀時並請參 考附圖。 The features and advantages of the present invention can be further understood from the following description. Please refer to the Consider the attached drawings.

1‧‧‧第一封裝結構 1‧‧‧The first package structure

2‧‧‧第二封裝結構 2‧‧‧Second package structure

11‧‧‧接點 11‧‧‧Contact

12‧‧‧光感測區 12‧‧‧Light sensing area

20‧‧‧基板 20‧‧‧Substrate

21‧‧‧接點 21‧‧‧Contact

22‧‧‧板孔 22‧‧‧Plate hole

23‧‧‧上接點 23‧‧‧Upper contact

24‧‧‧下接點 24‧‧‧Lower contact

30‧‧‧導接球 30‧‧‧Guiding the ball

40‧‧‧電路板 40‧‧‧Circuit board

41‧‧‧接點 41‧‧‧Contact

42‧‧‧穿孔 42‧‧‧Perforation

60‧‧‧導線 60‧‧‧Wire

65‧‧‧內導線 65‧‧‧Inner wire

70‧‧‧CMOS晶片 70‧‧‧CMOS chip

81‧‧‧擋堤 81‧‧‧Block Dike

90‧‧‧玻璃 90‧‧‧Glass

95‧‧‧空隙 95‧‧‧Gap

200‧‧‧膠材 200‧‧‧Glue

300‧‧‧封裝結構 300‧‧‧Packaging structure

圖1A顯示本案之第一實施例之CMOS晶片、基板及電路板之分解示意圖。 FIG. 1A shows an exploded schematic diagram of the CMOS chip, substrate, and circuit board of the first embodiment of the present application.

圖1B顯示本案之第一實施例之元件組合之截面示意圖。 FIG. 1B shows a schematic cross-sectional view of the component assembly of the first embodiment of the present application.

圖1C顯示圖1B之元件組合之應用例之截面示意圖。 FIG. 1C shows a schematic cross-sectional view of an application example of the component combination of FIG. 1B.

圖2A顯示本案之第二實施例之CMOS晶片、基板及電路板之分解示意圖。 2A shows an exploded schematic diagram of the CMOS chip, substrate and circuit board of the second embodiment of the present application.

圖2B顯示本案之第二實施例之元件組合之截面示意圖。 2B shows a schematic cross-sectional view of the component combination of the second embodiment of the present application.

圖2C顯示圖2B之元件組合之應用例之截面示意圖。 FIG. 2C shows a schematic cross-sectional view of an application example of the component combination of FIG. 2B.

圖3A顯示本案之第三實施例之CMOS晶片、基板及電路板之分解示意圖。 FIG. 3A shows an exploded schematic diagram of the CMOS chip, substrate and circuit board of the third embodiment of the present application.

圖3B顯示本案之第三實施例之元件組合之截面示意圖。 FIG. 3B shows a schematic cross-sectional view of the component combination of the third embodiment of the present application.

圖3C顯示圖3B之元件組合之應用例之截面示意圖。 FIG. 3C shows a schematic cross-sectional view of an application example of the component combination of FIG. 3B.

圖4A顯示本案之第四實施例之CMOS晶片、基板及電路板之分解示意圖。 4A shows an exploded schematic diagram of the CMOS chip, substrate and circuit board of the fourth embodiment of the present application.

圖4B顯示本案之第四實施例之元件組合之截面示意圖。 FIG. 4B shows a schematic cross-sectional view of the component assembly of the fourth embodiment of the present application.

圖4C顯示圖4B之元件組合之應用例之截面示意圖。 4C shows a schematic cross-sectional view of an application example of the component combination of FIG. 4B.

茲謹就本案的結構組成,及所能產生的功效與優點,配合圖式,舉本案之一較佳實施例詳細說明如下。 With regard to the structural composition of this case, and the effects and advantages that can be produced, in conjunction with the drawings, a preferred embodiment of this case is described in detail as follows.

請參考圖1A至圖1C所示,顯示本發明之具有FOWBCSP CMOS晶片型態 的封裝結構300之第一實施例,包含下列元件: Please refer to FIGS. 1A to 1C, which show the FOWBCSP CMOS chip type of the present invention The first embodiment of the package structure 300 includes the following components:

一CMOS晶片70,該CMOS晶片70之上方包含接點11及光感測區12。 A CMOS chip 70, the upper part of the CMOS chip 70 includes the contact 11 and the light sensing area 12.

一第一封裝結構1位在該CMOS晶片70下方與側邊。 A first package structure 1 is located below and on the side of the CMOS chip 70.

兩擋堤81,位於該CMOS晶片70的該光感測區12的上方的兩側。 Two barriers 81 are located on the upper two sides of the light sensing area 12 of the CMOS chip 70.

一基板20置於該CMOS晶片70之上方,其中該基板20具有一穿透之板孔22,該板孔22係對應該CMOS晶片70之接點11及該光感測區12之位置,而使得光線可以經過該板孔22照射該光感測區12。而該基板20的上方形成接點21。由導線60經過該基板20之板孔22連接該基板20之接點21及該CMOS晶片70之接點11。 A substrate 20 is placed above the CMOS chip 70, wherein the substrate 20 has a through hole 22 corresponding to the position of the contact 11 of the CMOS chip 70 and the light sensing area 12, and The light can pass through the plate hole 22 to illuminate the light sensing area 12. A contact 21 is formed above the substrate 20. The contact 21 of the substrate 20 and the contact 11 of the CMOS chip 70 are connected by a wire 60 through the hole 22 of the substrate 20.

一玻璃90位在該CMOS晶片70的該光感測區12的上方,該玻璃90係置於該兩擋堤81之間。 A glass 90 is located above the light sensing area 12 of the CMOS chip 70, and the glass 90 is placed between the two barriers 81.

其中該基板20之該板孔22形成一第二封裝結構2係應用膠材200密封該板孔22而形成,而並不覆蓋該玻璃90,以使得該玻璃90外露,因此外部的光線可以直接經由該玻璃90照射該CMOS晶片70。 The plate hole 22 of the substrate 20 forms a second packaging structure 2 which is formed by sealing the plate hole 22 with glue 200 without covering the glass 90, so that the glass 90 is exposed, so external light can be directly exposed. The CMOS wafer 70 is irradiated through the glass 90.

其中該基板20上方的接點21具有導接球30(該導接球30如錫球或焊球)。 The contact 21 above the substrate 20 has a conductive ball 30 (the conductive ball 30 is a tin ball or a solder ball).

如圖1C所示,應用時該基板20的上方係配置一電路板40,其中該電路板40為軟板,且該電路板40上形成一穿透之穿孔42,該穿孔42的位置係對應於該玻璃90,而使得外部的光線可以經由該穿孔42穿透該玻璃90而照射該CMOS晶片70。其中該基板20上方的接點21上的導接球30係接引到該電路板40上的接點41,以形成電連通。 As shown in FIG. 1C, a circuit board 40 is disposed above the substrate 20 during application. The circuit board 40 is a flexible board, and a through hole 42 is formed on the circuit board 40. The position of the hole 42 corresponds to On the glass 90, external light can penetrate the glass 90 through the through hole 42 to illuminate the CMOS chip 70. The conductive ball 30 on the contact 21 above the substrate 20 is connected to the contact 41 on the circuit board 40 to form electrical communication.

圖2A至圖2C顯示本案之第二實施例,在本實施例中與上述實施例相同的元件以相同的符號表示,並且具有相同的功能,故不再贅述其細節。下 文中僅說明其差異處。 2A to 2C show the second embodiment of this case. In this embodiment, the same elements as the above-mentioned embodiments are represented by the same symbols and have the same functions, so the details are not repeated here. Down Only the differences are explained in the article.

在本實施例中,其中該玻璃90係置於該兩擋堤81的上端,且該玻璃90與該CMOS晶片70之間形成一空隙95。 In this embodiment, the glass 90 is placed on the upper ends of the two barriers 81, and a gap 95 is formed between the glass 90 and the CMOS wafer 70.

如圖2C所示,應用時該基板20的上方係配置一電路板40。該基板20上方的接點21上的導接球30係接引到該電路板40上的接點41,以形成電連通。 As shown in FIG. 2C, a circuit board 40 is arranged above the substrate 20 during application. The conductive ball 30 on the contact 21 above the substrate 20 is connected to the contact 41 on the circuit board 40 to form electrical communication.

圖3A至圖3C顯示本案之第三實施例,係不配置導線60,而直接在該基板20下方形成下接點24用於對接該CMOS晶片70上方的接點11。本實施例包含下列元件: FIGS. 3A to 3C show the third embodiment of the present invention. The wire 60 is not provided, and the lower contact 24 is formed directly under the substrate 20 for connecting to the contact 11 above the CMOS chip 70. This embodiment includes the following elements:

一CMOS晶片70,該CMOS晶片70之上方包含接點11及光感測區12。 A CMOS chip 70, the upper part of the CMOS chip 70 includes the contact 11 and the light sensing area 12.

一第一封裝結構1位在該CMOS晶片70下方與側邊。 A first package structure 1 is located below and on the side of the CMOS chip 70.

兩擋堤81,位於該CMOS晶片70的該光感測區12的上方的兩側。 Two barriers 81 are located on the upper two sides of the light sensing area 12 of the CMOS chip 70.

一基板20置於該CMOS晶片70之上方,其中該基板20具有一穿透之板孔22,該板孔22係對應該CMOS晶片70之該光感測區12及該兩擋堤81的位置,而使得光線可以經過該板孔22照射該光感測區12;其中該基板20的上方形成上接點23,且該基板20的下方形成下接點24。其中該上接點23經由位在該基板20內部的內導線65連接到一對應之下接點24。該基板20經由該下接點24連接該CMOS晶片70上對應之接點11。 A substrate 20 is placed above the CMOS chip 70, wherein the substrate 20 has a through hole 22 corresponding to the position of the light sensing area 12 and the two barriers 81 of the CMOS chip 70 , So that light can pass through the plate hole 22 to illuminate the light sensing area 12; wherein an upper contact 23 is formed above the substrate 20, and a lower contact 24 is formed below the substrate 20. The upper contact 23 is connected to a corresponding lower contact 24 via an inner wire 65 located inside the substrate 20. The substrate 20 is connected to the corresponding contact 11 on the CMOS chip 70 via the lower contact 24.

一玻璃90,係置於該兩擋堤81的上端,且該玻璃90與該CMOS晶片70之間形成一空隙95。 A glass 90 is placed on the upper ends of the two barriers 81, and a gap 95 is formed between the glass 90 and the CMOS chip 70.

因此外部的光線可以直接經由該玻璃90照射該CMOS晶片70。 Therefore, external light can directly illuminate the CMOS chip 70 through the glass 90.

其中該基板20上方的上接點23具有導接球30(該導接球30如錫球或焊球)。 The upper contact 23 above the substrate 20 has a conductive ball 30 (the conductive ball 30 is a tin ball or a solder ball).

如圖3C所示,應用時該基板20的上方係配置一電路板40,其中該電路板40為軟板,且該電路板40上形成一穿透之穿孔42,該穿孔42的位置係對應於該玻璃90,而使得外部的光線可以經由該穿孔42穿透該玻璃90而照射該CMOS晶片70。其中該基板20上方的接點21上的導接球30係接引到該電路板40上的接點41,以形成電連通。 As shown in FIG. 3C, a circuit board 40 is disposed above the substrate 20 during application. The circuit board 40 is a flexible board, and a through hole 42 is formed on the circuit board 40. The position of the hole 42 corresponds to On the glass 90, external light can penetrate the glass 90 through the through hole 42 to illuminate the CMOS chip 70. The conductive ball 30 on the contact 21 above the substrate 20 is connected to the contact 41 on the circuit board 40 to form electrical communication.

圖4A至圖4C顯示本案之第四實施例,係將該基板20延伸到該CMOS晶片70的外側,並在該基板20下方形成下接點24用於連接該CMOS晶片70上方的接點11、以及電路板40上的接點41。本實施例包含下列元件: 4A to 4C show the fourth embodiment of the present case, which is to extend the substrate 20 to the outside of the CMOS chip 70, and form a lower contact 24 below the substrate 20 for connecting the contact 11 above the CMOS chip 70 , And the contact 41 on the circuit board 40. This embodiment includes the following elements:

一CMOS晶片70,該CMOS晶片70之上方包含接點11及光感測區12。 A CMOS chip 70, the upper part of the CMOS chip 70 includes the contact 11 and the light sensing area 12.

一第一封裝結構1位在該CMOS晶片70下方與側邊。 A first package structure 1 is located below and on the side of the CMOS chip 70.

兩擋堤81,位於該CMOS晶片70的該光感測區12的上方的兩側。 Two barriers 81 are located on the upper two sides of the light sensing area 12 of the CMOS chip 70.

一基板20置於該CMOS晶片70之上方,其中該基板20具有一穿透之板孔22,該板孔22係對應該CMOS晶片70之該光感測區12及該兩擋堤81的位置,而使得光線可以經過該板孔22照射該光感測區12。其中該基板20的下方形成下接點24。該基板20經由該下接點24連接該CMOS晶片70上對應之接點11。 A substrate 20 is placed above the CMOS chip 70, wherein the substrate 20 has a through hole 22 corresponding to the position of the light sensing area 12 and the two barriers 81 of the CMOS chip 70 , So that light can pass through the plate hole 22 to illuminate the light sensing area 12. A lower contact 24 is formed under the substrate 20. The substrate 20 is connected to the corresponding contact 11 on the CMOS chip 70 via the lower contact 24.

其中該基板20的至少一側及該至少一側所對應之下接點24延伸到該CMOS晶片70的外側。 At least one side of the substrate 20 and the lower contact 24 corresponding to the at least one side extend to the outside of the CMOS chip 70.

一玻璃90,係置於該兩擋堤81的上端,且該玻璃90與該CMOS晶片70之間形成一空隙95。 A glass 90 is placed on the upper ends of the two barriers 81, and a gap 95 is formed between the glass 90 and the CMOS chip 70.

因此外部的光線可以直接經由該玻璃90照射該CMOS晶片70。 Therefore, external light can directly illuminate the CMOS chip 70 through the glass 90.

如圖4C所示,應用時該基板20的下方係配置一電路板40,其中該基板20上延伸到該CMOS晶片70外側的下接點24係連接到該電路板40上的接點 41,使得該電路板40與該CMOS晶片70之間形成電連通。 As shown in FIG. 4C, a circuit board 40 is disposed under the substrate 20 during application, wherein the lower contact 24 on the substrate 20 that extends to the outside of the CMOS chip 70 is connected to the contact on the circuit board 40 41, so that the circuit board 40 and the CMOS chip 70 are in electrical communication.

本案也可以應用多個CMOS晶片70互相並排以形成上述的封裝結構,其餘結構同於上述各實施例,因此不再贅述其細節。 In this case, a plurality of CMOS chips 70 can be arranged side by side to form the above-mentioned package structure. The rest of the structure is the same as the above-mentioned embodiments, so the details will not be repeated.

本案的優點為在基板上只需要形成單一個板孔,而使得多個導線同時通過該板孔,不若傳統的結構必須形成多個板孔,所以製造期間縮短而且成本也降低。本案中可在該基板的上方配置接點並經由導線連接CMOS晶片之接點;或是在該基板的上方及下方配置互相連接之上接點及下接點,而經由該下接點連接該CMOS晶片之接點;或是將該基板的至少一側延伸到該CMOS晶片外側,且在該基板下方配置下接點,而經由該下接點同時連接到該CMOS晶片以及位在該基板下方的電路板之接點。再者本案在封裝時僅需要對有可能裸露導線的少數區域進行封裝,而不必像傳統的結構及封裝的區域片不整個晶片及基板的上方,所以本案的封裝方式可以節省成本及工時。再者因為導線的長度較短而且大部分隱藏在板孔內部,所以不至於造成導線裸露,而導致其他危害的問題。 The advantage of this case is that only a single plate hole needs to be formed on the substrate, and multiple wires pass through the plate hole at the same time, instead of forming multiple plate holes in the traditional structure, the manufacturing period is shortened and the cost is also reduced. In this case, contacts can be arranged above the substrate and connected to the contacts of the CMOS chip via wires; or above and below the substrate are arranged to connect the upper and lower contacts, and the lower contacts are connected to the CMOS chip contact; or extend at least one side of the substrate to the outside of the CMOS chip, and a lower contact is arranged under the substrate, and the lower contact is simultaneously connected to the CMOS chip and located under the substrate The contact point of the circuit board. Furthermore, in this case, only a few areas where the wires may be exposed are required to be packaged, instead of covering the entire chip and substrate as in the traditional structure and packaging area. Therefore, the packaging method in this case can save cost and man-hours. Furthermore, because the length of the wire is short and most of it is hidden inside the board hole, it will not cause the wire to be exposed and cause other hazards.

綜上所述,本案人性化之體貼設計,相當符合實際需求。其具體改進現有缺失,相較於習知技術明顯具有突破性之進步優點,確實具有功效之增進,且非易於達成。本案未曾公開或揭露於國內與國外之文獻與市場上,已符合專利法規定。 In summary, the humanized and considerate design of this case is quite in line with actual needs. Compared with the conventional technology, the specific improvement of the existing defects is obviously a breakthrough advantage, and it does have an increase in efficacy, and it is not easy to achieve. This case has not been disclosed or disclosed in domestic and foreign documents and markets, and it has complied with the provisions of the Patent Law.

上列詳細說明係針對本發明之一可行實施例之具體說明,惟該實施例並非用以限制本發明之專利範圍,凡未脫離本發明技藝精神所為之等效實施或變更,均應包含於本案之專利範圍中。 The above detailed description is a specific description of a possible embodiment of the present invention, but this embodiment is not intended to limit the scope of the patent of the present invention. Any equivalent implementation or modification that does not deviate from the technical spirit of the present invention should be included in In the scope of the patent in this case.

1‧‧‧第一封裝結構 1‧‧‧The first package structure

2‧‧‧第二封裝結構 2‧‧‧Second package structure

11‧‧‧接點 11‧‧‧Contact

12‧‧‧光感測區 12‧‧‧Light sensing area

20‧‧‧基板 20‧‧‧Substrate

30‧‧‧導接球 30‧‧‧Guiding the ball

60‧‧‧導線 60‧‧‧Wire

70‧‧‧CMOS晶片 70‧‧‧CMOS chip

81‧‧‧擋堤 81‧‧‧Block Dike

90‧‧‧玻璃 90‧‧‧Glass

21‧‧‧接點 21‧‧‧Contact

22‧‧‧板孔 22‧‧‧Plate hole

200‧‧‧膠材 200‧‧‧Glue

300‧‧‧封裝結構 300‧‧‧Packaging structure

Claims (16)

一種具有FOWBCSP CMOS晶片型態的封裝結構,包含: A package structure with FOWBCSP CMOS chip type, including: 一CMOS晶片,該CMOS晶片之上方包含接點及一光感測區; A CMOS chip, the upper part of the CMOS chip includes contacts and a light sensing area; 兩擋堤位於該CMOS晶片的該光感測區的上方的兩側; Two barriers are located on both sides of the upper side of the light sensing area of the CMOS chip; 一基板置於該CMOS晶片之上方,其中該基板具有一穿透之板孔,該板孔係對應該CMOS晶片之接點及該光感測區的位置,而使得光線可以經過該板孔照射該光感測區,而該基板的上方形成接點;由導線經過該基板之板孔連接該基板之接點及該CMOS晶片之接點; A substrate is placed above the CMOS chip, wherein the substrate has a through hole, and the hole corresponds to the position of the contact of the CMOS chip and the light sensing area, so that light can be irradiated through the hole The light-sensing area, and a contact is formed above the substrate; the contact of the substrate and the contact of the CMOS chip are connected by a wire through the hole of the substrate; 一玻璃位在該CMOS晶片的該光感測區的上方;以及 A glass is located above the light sensing area of the CMOS chip; and 其中該基板之該板孔形成一第二封裝結構係應用膠材密封該板孔而形成;其中該第二封裝結構並不覆蓋該玻璃,以使得該玻璃外露,因此外部的光線可以直接經由該玻璃照射該CMOS晶片;其中該基板上方的接點具有導接球。 Wherein the plate hole of the substrate forms a second package structure by applying glue to seal the plate hole; wherein the second package structure does not cover the glass, so that the glass is exposed, so external light can directly pass through the plate hole. The glass irradiates the CMOS chip; wherein the contact above the substrate has a conductive ball. 如申請專利範圍第1項所述之具有FOWBCSP CMOS晶片型態的封裝結構,其中該玻璃置於該兩擋堤之間。 The package structure with FOWBCSP CMOS chip type as described in item 1 of the scope of patent application, wherein the glass is placed between the two barriers. 如申請專利範圍第1項所述之具有FOWBCSP CMOS晶片型態的封裝結構,其中該玻璃置於該兩擋堤的上端,且該玻璃與該CMOS晶片之間形成一空隙。 The package structure with FOWBCSP CMOS chip type as described in the first item of the scope of patent application, wherein the glass is placed on the upper ends of the two barriers, and a gap is formed between the glass and the CMOS chip. 如申請專利範圍第1或2或3項所述之具有FOWBCSP CMOS晶片型態的封裝結構,尚包含一第一封裝結構位在該CMOS晶片的下方與側邊。 The package structure with FOWBCSP CMOS chip type as described in item 1 or 2 or 3 of the scope of patent application further includes a first package structure located below and on the side of the CMOS chip. 如申請專利範圍第1或2或3項所述之具有FOWBCSP CMOS晶片型態的封裝結構,其中該導接球為錫球或焊球。 As described in item 1, 2 or 3 of the scope of patent application, the package structure with FOWBCSP CMOS chip type, wherein the conductive ball is a solder ball or a solder ball. 如申請專利範圍第1或2或3項所述之具有FOWBCSP CMOS晶片型態的封裝結構,尚包含一電路板位於該基板的上方,其中該基板上方的接點上的導接球係接引到該電路板上的接點,以形成電連通;其中該電路板上形成一穿透之穿孔,該穿孔的位置係對應於該玻璃,而使得外部的光線可以經由該穿孔穿透該玻璃而照射該CMOS晶片。 The package structure with FOWBCSP CMOS chip type as described in item 1 or 2 or 3 of the scope of patent application also includes a circuit board on the top of the substrate, wherein the conductive ball on the contact on the top of the substrate is connected To the contact point on the circuit board to form electrical communication; wherein a through hole is formed on the circuit board, and the position of the hole corresponds to the glass, so that external light can penetrate the glass through the hole Irradiate the CMOS wafer. 如申請專利範圍第6項所述之具有FOWBCSP CMOS晶片型態的封裝結構,其中該電路板為軟板。 The package structure with FOWBCSP CMOS chip type as described in item 6 of the scope of patent application, wherein the circuit board is a soft board. 一種具有FOWBCSP CMOS晶片型態的封裝結構,包含: A package structure with FOWBCSP CMOS chip type, including: 一CMOS晶片,該CMOS晶片之上方包含接點及光感測區; A CMOS chip, the upper part of the CMOS chip includes contacts and a light sensing area; 兩擋堤,位於該CMOS晶片的該光感測區的上方的兩側; Two barriers, located on both sides of the upper side of the light sensing area of the CMOS chip; 一基板置於該CMOS晶片之上方,其中該基板具有一穿透之板孔,該板孔係對應該CMOS晶片之該光感測區及該兩擋堤的位置,而使得光線可以穿過該板孔照射該光感測區;其中該基板的上方形成上接點,且該基板的下方形成下接點;其中該上接點經由位在該基板內部的內導線連接到一對應之下接點;該基板經由該下接點連接該CMOS晶片上對應之接點;其中該基板上方的上接點具有導接球;以及 A substrate is placed above the CMOS chip, wherein the substrate has a penetrating plate hole corresponding to the position of the light sensing area and the two barriers of the CMOS chip, so that light can pass through the The plate hole illuminates the light sensing area; wherein an upper contact is formed above the substrate, and a lower contact is formed under the substrate; wherein the upper contact is connected to a corresponding lower contact via an inner wire located inside the substrate Point; the substrate is connected to the corresponding contact on the CMOS chip via the lower contact; wherein the upper contact above the substrate has a conductive ball; and 一玻璃,係置於該兩擋堤的上端,且該玻璃與該CMOS晶片之間形成一空隙;因此外部的光線可以直接經由該玻璃照射該CMOS晶片。 A glass is placed on the upper ends of the two barriers, and a gap is formed between the glass and the CMOS chip; therefore, external light can directly illuminate the CMOS chip through the glass. 如申請專利範圍第8項所述之具有FOWBCSP CMOS晶片型態的封裝結構,尚包含一第一封裝結構位在該CMOS晶片下方與側邊。 The package structure with FOWBCSP CMOS chip type described in item 8 of the scope of patent application further includes a first package structure located below and on the side of the CMOS chip. 如申請專利範圍第8項所述之具有FOWBCSP CMOS晶片型態的封裝結構,其中該導接球為錫球或焊球。 As described in item 8 of the scope of patent application, the package structure with FOWBCSP CMOS chip type, wherein the conductive ball is a solder ball or a solder ball. 如申請專利範圍第8項所述之具有FOWBCSP CMOS晶片型態的封裝結構,尚包含一電路板位於該基板的上方,其中該基板上方的接點上的導接球係接引到該電路板上的接點,以形成電連通;其中該電路板上形成一穿透之穿孔,該穿孔的位置係對應於該玻璃,而使得外部的光線可以經由該穿孔穿透該玻璃而照射該CMOS晶片。 The package structure with FOWBCSP CMOS chip type as described in item 8 of the scope of patent application also includes a circuit board located above the substrate, wherein the conductive balls on the contacts above the substrate are connected to the circuit board The circuit board is formed with a through hole, and the position of the hole corresponds to the glass, so that external light can penetrate the glass through the hole and irradiate the CMOS chip . 如申請專利範圍第11項所述之具有FOWBCSP CMOS晶片型態的封裝結構,其中該電路板為軟板。 The package structure with FOWBCSP CMOS chip type as described in item 11 of the scope of patent application, wherein the circuit board is a soft board. 一種具有FOWBCSP CMOS晶片型態的封裝結構,包含: A package structure with FOWBCSP CMOS chip type, including: 一CMOS晶片,該CMOS晶片之上方包含接點及光感測區; A CMOS chip, the upper part of the CMOS chip includes contacts and a light sensing area; 兩擋堤,位於該CMOS晶片的該光感測區的上方的兩側; Two barriers, located on both sides of the upper side of the light sensing area of the CMOS chip; 一基板置於該CMOS晶片之上方,其中該基板具有一穿透之板孔,該板孔係對應該CMOS晶片之該光感測區及該兩擋堤的位置,而使得光線可以穿過該板孔照射該光感測區;其中該基板的下方形成下接點;該基板經由該下接點連接該CMOS晶片上對應之接點;其中該基板的至少一側及該至少一側所對應之下接點延伸到該CMOS晶片的外側;以及 A substrate is placed above the CMOS chip, wherein the substrate has a penetrating plate hole corresponding to the position of the light sensing area and the two barriers of the CMOS chip, so that light can pass through the The plate hole illuminates the light sensing area; wherein a lower contact is formed under the substrate; the substrate is connected to the corresponding contact on the CMOS chip through the lower contact; wherein at least one side of the substrate corresponds to the at least one side The lower contact extends to the outside of the CMOS chip; and 一玻璃,係置於該兩擋堤的上端,且該玻璃與該CMOS晶片之間形成一空隙;因此外部的光線可以直接經由該玻璃照射該CMOS晶片。 A glass is placed on the upper ends of the two barriers, and a gap is formed between the glass and the CMOS chip; therefore, external light can directly illuminate the CMOS chip through the glass. 如申請專利範圍第13項所述之具有FOWBCSP CMOS晶片型態的封裝結構,尚包含一第一封裝結構位在該CMOS晶片下方與側邊。 The package structure with FOWBCSP CMOS chip type as described in item 13 of the scope of patent application further includes a first package structure located below and on the side of the CMOS chip. 如申請專利範圍第13項所述之具有FOWBCSP CMOS晶片型態的封裝結構,尚包含一電路板位於該基板的下方,其中該基板上延伸到該CMOS晶片外側的下接點係連接到該電路板上的接點,使得該電路板與該CMOS 晶片之間形成電連通。 The package structure with FOWBCSP CMOS chip type as described in item 13 of the scope of patent application further includes a circuit board located below the substrate, wherein the lower contacts on the substrate extending to the outside of the CMOS chip are connected to the circuit The contacts on the board make the circuit board and the CMOS Electrical communication is formed between the wafers. 如申請專利範圍第15項所述之具有FOWBCSP CMOS晶片型態的封裝結構,其中該電路板為軟板。 The package structure with FOWBCSP CMOS chip type as described in item 15 of the scope of patent application, wherein the circuit board is a soft board.
TW108148702A 2019-12-31 2019-12-31 Package structure with FOWBCSP CMOS chip module where most of wires are hidden in the plate aperture and capable of shortening manufacturing time with reduced cost TW202127641A (en)

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