TW202123450A - Full color led display panel using electrodes to define sub-pixels and manufacturing method for making the same - Google Patents

Abstract

The present invention discloses a full color LED display panel using electrodes to define sub-pixels, comprising: M numbesr of long shaped light-emitting (LSLE) structures formed on a first surface of a double side polished transparent substrate (DSPTS), wherein each LSLE structure comprises a long shaped buffer layer, a long shaped first semiconductor layer, a long shaped active layer, and a long shaped second semiconductor layer, and an insulation layer is formed for covering the LSLE structures. Moreover, there are M×N numbers of first conductive layer and M×N numbers of transparent conductive layer provided in the insulation layer, and M×N numbers of second conductive layer are formed on the insulation layer. As such, the M×N numbers of first conductive layer can be connected to M numbers of conductive lines, and the M×N numbers of second conductive layer can be connected to M numbers of conductive lines, such that the full color LED display panel of the present invention can be easily integrated with a display driver circuit by way of COF or COG.

Description

Full-color LED display panel using electrodes to define sub-pixels and manufacturing method thereof

The present invention relates to the technical field of self-luminous display panels, in particular to a full-color LED display panel using electrodes to define sub-pixels and a manufacturing method thereof.

It is known that the types of existing flat panel displays include liquid crystal displays (LCD), organic light-emitting diode (OLED) displays, and light-emitting diode (LED) displays. Engineers who are familiar with the design and manufacture of display panels must know that liquid crystal displays have the disadvantages of non-self-luminous, low efficiency, low dynamic range, and the need for polarization filtering. Although OLED displays are self-luminous displays, the low reliability and low efficiency (~5%QE) of blue OLED components have become the main drawbacks of OLED displays.

On the contrary, the production technology of red, green, and blue LED components is very mature, making LED displays have the advantages of self-luminescence, high efficiency, high dynamic range, high response speed, and a service life of more than 50,000 hours. Therefore, in the field of medium and small displays, LED displays The device has gradually replaced the traditional liquid crystal display and has become the mainstream of small and medium-sized displays. In recent years, LED display technology has become more mature and has been widely used in products such as smart phones, TVs, computer screens, and smart watches. Therefore, the industry is more committed to the development of sub-millimeter light-emitting diodes ( Mini LED) display and micro light emitting diode (Micro LED) display, so that the LED display has a higher resolution.

However, how to enable an LED display panel with M×N LED light emitting structures to be easily integrated with a display driver chip is an urgent problem in the industry. In view of this, the inventor of this case tried his best to research and create inventions, and finally completed the invention of a full-color LED display panel using electrode-defined sub-pixels and its manufacturing method.

The main purpose of the present invention is to provide a full-color LED display panel using electrodes to define sub-pixels, and a full-color LED display panel using electrodes to define sub-pixels, which includes a first surface formed on a double-sided polished light-transmitting substrate The above M long strip light-emitting structures. In particular, each of the strip-shaped light-emitting structures includes a strip-shaped buffer layer, a strip-shaped first semiconductor material layer, a strip-shaped active layer, and a strip-shaped second semiconductor material layer, and an insulating layer The layer is formed on the first surface and covers the elongated light-emitting structure. M×N first conductive layers and M×N transparent conductive layers are further fabricated in the insulating layer, so that N first conductive layers are provided on each of the elongated first semiconductor material layers, and On the elongated second semiconductor material layer There are N transparent conductive layers. Further, M×N second conductive layers are provided on the insulating layer, so that each transparent conductive layer is partially covered and connected by the second conductive layer. In this design, M first common electrode lines are used to connect M×N first conductive layers and N second common electrode lines are used to connect M×N second conductive layers, so that a display driver chip can easily pass through COF or COG. It is integrated with the composite full-color LED display panel of the present invention.

In order to achieve the above objectives of the present invention, the present invention provides an embodiment of the full-color LED display panel using electrodes to define sub-pixels, which includes:

A double-sided polished light-transmitting substrate with a first surface and a second surface;

A buffer layer formed on the first surface;

A first semiconductor material layer is formed on the buffer layer; wherein, laser cutting technology is used to cut the first semiconductor material layer and the buffer layer to polish the first surface of the transparent substrate on both sides A plurality of dicing lanes are fabricated on top, and then the plurality of dicing lanes are used to divide the buffer layer into M elongated buffer layers, and at the same time, the first semiconductor material layer is divided into M elongated first semiconductor material layers ；

M elongated active layers are respectively formed on the M elongated first semiconductor material layers;

M long strip-shaped second semiconductor material layers are respectively formed on the M long strip-shaped active layers;

M first conductive layers, wherein they are respectively formed on the M long strip-shaped first semiconductor material layers;

An insulating layer covering the M first conductive layers and the M long strip-shaped second semiconductor material layers, and filling the plurality of dicing channels; wherein, the insulating layer is provided with M× N openings;

The M×N transparent conductive layers are respectively formed on the M elongated second semiconductor material layers through the M×N openings, so that each of the elongated second semiconductor material layers is formed with N of the transparent conductive layers;

M×N second conductive layers are respectively formed on the M×N transparent conductive layers; and

A light conversion unit is arranged on the M×N second conductive layers and includes M×N light conversion parts corresponding to the M×N transparent conductive layers.

In addition, the present invention also provides the aforementioned method for manufacturing a full-color LED display panel using electrodes to define sub-pixels, including the following steps:

(1) Provide a double-sided polished light-transmitting substrate with a first surface and a second surface;

(2) Sequentially forming a buffer layer, a first semiconductor material layer, an active layer, and a second semiconductor material layer on the first surface;

(3) Using lithographic etching technology and a first photoresist layer to make N long grooves that completely penetrate the second semiconductor material layer, the active layer, and partially etch the first semiconductor material layer, and then use The N elongated grooves divide the second semiconductor material layer into M elongated second semiconductor material layers, and at the same time, divide the active layer into M elongated active layers, and then remove the first photoresist Floor;

(4) Cover the elongated second semiconductor material layer with a second photoresist layer And make the sidewalls of each of the elongated grooves covered with the second photoresist layer;

(5) A first conductive layer is formed in each of the elongated grooves, and then the second photoresist layer is removed;

(6) Using laser cutting technology to cut the bottom of each of the elongated grooves, so as to form a plurality of cutting channels on the first surface of the double-sided polished light-transmitting substrate, and then use the plurality of cutting channels. The dicing lane divides the buffer layer into M elongated buffer layers, and at the same time divides the first semiconductor material layer into M elongated first semiconductor material layers;

(7) N third photoresist layers are formed on each of the elongated second semiconductor material layers;

(8) An insulating layer is formed to cover the M long strip-shaped second semiconductor material layers, and the insulating layer is filled into the M long strip-shaped grooves and the plurality of cutting channels;

(9) removing the M×N third photoresist layers, so that the insulating layer has M×N openings for exposing the second semiconductor material layer;

(10) In the case of using photolithography and a fourth photoresist layer, M×N transparent conductive layers are formed in the M×N openings respectively, and then the fourth photoresist layer is removed;

(11) Using photolithographic etching technology and a fifth photoresist layer, M×N second conductive layers are formed on the insulating layer, and each of the second conductive layers partially covers a Above the transparent conductive layer; and

(12) After removing the fifth photoresist layer, a light conversion unit including M×N light conversion parts is disposed on the M×N second conductive layer to complete a back contact full-color LED display panel The production.

In a possible embodiment, the full-color LED display panel using electrodes to define sub-pixels of the present invention further includes:

The M first bridge wires are respectively connected to the M first conductive layers, and a first common electrode is formed on each of the first bridge wires.

In a possible embodiment, the full-color LED display panel using electrodes to define sub-pixels of the present invention further includes:

N second bridging wires, wherein each of the second bridging wires is connected to M of the second conductive layers arranged in the same row, and a second common electrode is formed on each of the second bridging wires.

In a possible embodiment, the full-color LED display panel using electrode-defined sub-pixels of the present invention is combined with a driving circuit module to form a full-color LED display device, wherein the driving circuit module has M first contacts It is used for electrically connecting with the M first common electrodes, and the driving circuit module also has N second contacts for electrically connecting with the N second common electrodes.

In a possible embodiment, the full-color LED display device including the full-color LED display panel using electrode-defined sub-pixels and the driving circuit module of the present invention is further combined with a touch panel to form a full-color LED touch display Device, and the touch panel is placed on the light conversion unit.

In the foregoing embodiment of the full-color LED display panel using electrodes to define sub-pixels of the present invention, the double-sided polished transparent substrate can be any of the following: double-sided polished sapphire substrate, double-sided polished spinel substrate, Double-sided throw Light silicon carbide substrate, double-sided polished glass substrate, or double-sided polished quartz substrate.

In the foregoing embodiment of the full-color LED display panel using electrode-defined sub-pixels of the present invention, the insulating layer is made of an oxide, and the buffer layer can be made of any one of the following: undoped Of gallium nitride (undoped GaN), aluminum nitride (AlN), or zinc oxide (ZnO).

In the foregoing embodiment of the full-color LED display panel using electrode-defined sub-pixels of the present invention, the manufacturing material of the strip-shaped first semiconductor material layer is n-type gallium nitride (n-type gallium nitride, n-GaN). ), and the manufacturing material of the elongated second semiconductor material layer is p-type gallium nitride (p-GaN).

In the foregoing embodiment of the full-color LED display panel using electrode-defined sub-pixels of the present invention, the elongated active layer is between the elongated first semiconductor material layer and the elongated second semiconductor material layer A multiple quantum well structure is formed between, and the multiple quantum well structure is a multiple alternate stack of _{an undoped gallium nitride (undoped GaN) layer and an indium gallium nitride (In x} Ga _{1-x N) layer} structure. And, corresponding to the multiple quantum well structure including a plurality of undoped gallium nitride layers and a plurality of indium gallium nitride layers stacked alternately with each other, the M×N light conversion parts include: a plurality of red A light conversion section, a plurality of green light conversion sections, and a plurality of empty conversion sections.

In the foregoing embodiment of the full-color LED display panel using electrode-defined sub-pixels of the present invention, the elongated active layer is between the elongated first semiconductor material layer and the elongated second semiconductor material layer A multiple quantum well structure is formed between, and the multiple quantum well structure is a multiple alternate stack _{of an aluminum gallium nitride (Al x} Ga _1-x N) layer and an indium gallium nitride (In _x Ga _{1-x N) layer} structure. And, corresponding to the multiple quantum well structure including a plurality of undoped gallium nitride layers and a plurality of indium gallium nitride layers stacked alternately with each other, the M×N light conversion parts include: a plurality of red A light conversion section, a plurality of green light conversion sections, and a plurality of blue light conversion sections.

<The present invention>

1‧‧‧Full color LED display panel

10‧‧‧Double-sided polished translucent substrate

101‧‧‧First surface

102‧‧‧Second surface

10G‧‧‧cutting road

11‧‧‧Long strip light-emitting structure

11B‧‧‧Buffer layer

11BL‧‧‧Long buffer layer

11N‧‧‧First semiconductor material layer

11NL‧‧‧Elongated first semiconductor material layer

11A‧‧‧Active layer

11AL‧‧‧Strip active layer

11P‧‧‧Second semiconductor material layer

11PL‧‧‧Long strip of second semiconductor material layer

1T‧‧‧Transparent conductive layer

1P‧‧‧First conductive layer

2P‧‧‧Second conductive layer

12‧‧‧Insulation layer

12O‧‧‧Open

15‧‧‧Optical Conversion Unit

15R‧‧‧Red light conversion part

15G‧‧‧Green Light Conversion

15B‧‧‧Blu-ray Conversion

15N‧‧‧Air Conversion Department

BL1‧‧‧First bridge wire

BL2‧‧‧Second bridge wire

CE1‧‧‧First common electrode

CE2‧‧‧Second common electrode

2‧‧‧Drive circuit module

21‧‧‧First contact

22‧‧‧Second contact

TP‧‧‧Touch Panel

S1-S‧‧‧Step

PR1‧‧‧First photoresist layer

PR2‧‧‧Second photoresist layer

PR3‧‧‧The third photoresist layer

PR4‧‧‧The fourth photoresist layer

PR5‧‧‧Fifth photoresist layer

RG1‧‧‧Long groove

<Learning>

no

1A and 1B show schematic side cross-sectional views of a full-color LED display panel using electrodes to define sub-pixels according to the present invention;

Figure 2 shows a three-dimensional view of M elongated light-emitting structures;

Fig. 3A shows a first schematic perspective view of the light conversion unit;

Fig. 3B shows a second schematic perspective view of the light conversion unit;

4 shows a schematic perspective view of a full-color LED display panel using electrodes to define sub-pixels according to the present invention;

5 shows a schematic perspective view of a full-color LED display panel using electrodes to define sub-pixels and a driving circuit module of the present invention;

6 shows a top view of the full-color LED display panel and driving circuit module using electrodes to define sub-pixels of the present invention;

7 shows a schematic side cross-sectional view of a full-color LED display panel using electrodes to define sub-pixels and a touch panel according to the present invention;

8A, 8B, and 8C show a flow chart of a manufacturing method of a full-color LED display panel using electrodes to define sub-pixels according to the present invention; and

9A to 9N show a schematic manufacturing flow chart of a full-color LED display panel using electrodes to define sub-pixels.

In order to more clearly describe a full-color LED display panel using electrodes to define sub-pixels and its manufacturing method and its manufacturing method proposed by the present invention, the preferred embodiments of the present invention will be described in detail below in conjunction with the drawings.

Use electrodes to define the structure of a full-color LED display panel with sub-pixels

1A and 1B show schematic side cross-sectional views of a full-color LED display panel using electrodes to define sub-pixels according to the present invention. The full-color LED display panel 1 using electrodes to define sub-pixels of the present invention mainly includes: a double-sided polished light-transmitting substrate 10 having a first surface 101 and a second surface 102, M elongated buffer layers 11BL, M elongated first semiconductor material layers 11NL, M elongated active layers 11AL, M elongated second semiconductor material layers 11P, M first conductive layers 1P, an insulating layer 12, M×N Transparent conductive layer 1T, M×N second conductive layers 2P, and a light conversion unit 15. In FIG. 1A, the light conversion unit 15 is disposed on the M×N second conductive layers 2P. On the other hand, FIG. 1B shows that the light conversion unit 15 is also It can be arranged on the second surface 102 of the double-sided polished light-transmitting substrate 10.

In a feasible embodiment, the double-sided polished light-transmitting substrate 10 can be any of the following: double-sided polished sapphire substrate, double-sided polished spinel substrate, double-sided polished silicon carbide substrate, double-sided polished glass substrate, or Double-sided polished quartz substrate. In particular, when a buffer layer 11B and a first semiconductor material layer 11N are formed on the first surface 101, the present invention uses laser cutting technology to cut the first semiconductor material layer 11N and the buffer layer 11B. , To fabricate a plurality of cutting lanes 10G (as shown in FIG. 1A) on the first surface 101 of the double-sided polished light-transmitting substrate 10, and then use the plurality of cutting lanes 10G to divide the buffer layer 11B into M The elongated buffer layers 11BL are divided into M of the elongated first semiconductor material layers 11NL at the same time the first semiconductor material layer 11N is divided. In addition, the M elongated active layers 11AL are respectively formed on the M elongated first semiconductor material layers 11NL, and the M elongated second semiconductor material layers 11PL are respectively formed on the M elongated Above the active layer 11AL. As shown in FIG. 1A, the M first conductive layers 1P are all elongated, and are respectively formed on the M elongated first semiconductor material layers 11NL.

In addition, the insulating layer 12 covers the M first conductive layers 1P and the M long strip-shaped second semiconductor material layers 11PL, and is filled in the plurality of dicing channels 10G. In a feasible embodiment, the processing material of the insulating layer 12 is an oxide, and FIG. 1A shows that the insulating layer 12 is provided with M×N openings 120. In particular, the present invention makes the M×N transparent conductive The layer 1T is formed on the M long strip-shaped second semiconductor material layers 11PL through the M×N openings 12O, so that N strips are formed on each of the long strip-shaped second semiconductor material layers 11PL. The transparent conductive layer 1T. Further, the M×N second conductive layers 2P are respectively formed on the M×N transparent conductive layers 1T, and the light conversion unit 15 is disposed on the M×N second conductive layers 2P (such as Shown in Figure 1A). It is worth noting that a total of N transparent conductive layers 1T are provided on each elongated second semiconductor material layer 11PL, and each of the transparent conductive layers 1T is used to enhance the elongated second semiconductor material. In addition to the uniformity of the injected current of the material layer 11PL, it is also used as a light outcoupling member with a specific area. In other words, there are a total of N light out-coupling elements (that is, the transparent conductive layer 1T) on each elongated second semiconductor material layer 11PL.

Continue to refer to FIG. 2, which shows a three-dimensional view of M elongated light-emitting structures. According to the foregoing description, the full-color LED display panel 1 using electrode-defined sub-pixels of the present invention mainly includes: a double-sided polished light-transmitting substrate 10, M elongated buffer layers 11BL, and M elongated first semiconductors Material layer 11NL, M elongated active layers 11AL, M elongated second semiconductor material layers 11PL, M first conductive layers 1P, an insulating layer 12, M×N transparent conductive layers 1T, M×N A second conductive layer 2P, and a light conversion unit 15. As shown in FIG. 2, one of the elongated buffer layer 11BL, one of the elongated first semiconductor material layer 11NL, and one of the elongated main The active layer 11AL, one elongated second semiconductor material layer 11PL, one first conductive layer 1P, N transparent conductive layers 1T, and N first conductive layers 1P together form a long strip状luminescent structure 11.

In more detail, the processing material of the elongated buffer layer 11BL is usually undoped GaN, aluminum nitride (AlN), or zinc oxide (ZnO). On the other hand, the manufacturing material of the elongated first semiconductor material layer 11NL is n-type gallium nitride (n-GaN), and the manufacturing material of the elongated second semiconductor material layer 11PL is P-type gallium nitride (p-type gallium nitride, p-GaN). Moreover, the elongated active layer 11AL usually forms a multiple quantum well structure between the elongated first semiconductor material layer 11NL and the elongated second semiconductor material layer 11PL. It is worth noting that the multiple quantum well structure is a multiple interactive stack structure of an undoped gallium nitride (undoped GaN) layer and an indium gallium nitride (In _x Ga _{1-x N) layer.} In the case of applying voltage to drive the elongated first semiconductor material layer 11NL and the elongated second semiconductor material layer 11PL, the M elongated active layers 11AL will pass through the M×N The transparent conductive layer 1T (ie, the light coupling-out member) emits a blue light. On the other hand, if the multiple quantum well structure is a _{multiple alternate stacked structure of an aluminum gallium nitride (Al x} Ga _1-x N) layer and an indium gallium nitride (In _x Ga _1-x N) layer, as long as A voltage is applied to drive the elongated first semiconductor material layer 11NL and the elongated second semiconductor material layer 11PL, and the M elongated active layers 11AL will pass through the M×N transparent conductive layers 1T ( That is, the optical coupling output member emits a purple light.

Continue to refer to FIGS. 3A and 3B, which show a first schematic perspective view and a second schematic perspective view of the light conversion unit 15 respectively. In an embodiment of the full-color LED display panel using electrodes to define sub-pixels of the present invention, as shown in FIG. 1A, the light conversion unit 15 is disposed on the M×N second conductive layers 2P, And it includes M×N light conversion parts corresponding to the M×N transparent conductive layers 1T, respectively. As shown in FIG. 3A, corresponding to each of the light coupling-out elements (ie, the transparent conductive layer 1T) emitting a blue light, the present invention makes the M×N light conversion parts of the light conversion unit 15 include: a plurality of red The light conversion unit 15R, a plurality of green light conversion units 15G, and a plurality of blank conversion units 15N. In an embodiment, the red light conversion portion 15R and the green light conversion portion 15G are respectively composed of a red light conversion material and a green light conversion material, and the red light conversion material and the green light conversion material may be phosphors or Quantum dots. Therefore, it can be understood that the M×N transparent conductive layers 1T and the M×N light conversion parts are regarded as M×N sub-pixels.

On the other hand, as shown in FIG. 3B, corresponding to each of the light coupling-out elements (that is, the transparent conductive layer 1T) emits a violet light, and the M×N light conversion parts of the light conversion unit 15 include: A plurality of red light conversion parts 15R, a plurality of green light conversion parts 15G, and a plurality of blue light conversion parts 15B. In an embodiment, the red light conversion portion 15R, the green light conversion portion 15G, and the blue light conversion portion 15B are respectively composed of a red light conversion material, a green light conversion material, and a blue light conversion material, and the red light conversion material, Green light conversion material and blue The light conversion materials can be phosphors or quantum dots. Therefore, it can be understood that the M×N transparent conductive layers 1T and the M×N light conversion parts are regarded as M×N sub-pixels. It is supplemented that the transparent conductive layer 1T can be an indium tin oxide (ITO) layer, or a thin metal layer (<10 nm) such as gold, silver, platinum, copper, aluminum, chromium, palladium, and rhodium.

4 shows a schematic perspective view of a full-color LED display panel using electrodes to define sub-pixels according to the present invention. In particular, FIG. 4 does not depict the double-sided polished light-transmitting substrate 10 and the insulating layer 12, and the purpose is to clearly show that each of the elongated first semiconductor material layers 11NL is provided with a strip The first conductive layer 1P in the shape of a rectangular shape, and N second conductive layers 2P and N transparent conductive layers 1T on each of the elongated second semiconductor material layers 11PL are shown. According to the design of the present invention, the full-color LED display panel 1 using electrodes to define sub-pixels further includes M first bridge wires BL1, respectively connected to the M first conductive layers 1P, and each of the first bridge wires A first common electrode CE1 is formed on the wire BL1. In addition, the full-color LED display panel 1 using electrodes to define sub-pixels further includes N second bridge wires BL2, wherein each of the second bridge wires BL2 is arranged in the same row as the M second bridge wires BL2. The conductive layers 2P are connected, and a second common electrode CE2 is formed on each of the second bridge wires BL2.

It can be seen from FIG. 1A that each of the first conductive layers 1P is covered by the insulating layer 12, and each of the transparent conductive layers 1T is formed on the elongated second semiconductor through the corresponding openings 120 opened in the insulating layer 12 Material layer 11PL, and each of the second conductive layers 2P is disposed on the insulating layer 12 and partially covers the corresponding transparent conductive layer 1T. Therefore, when the first bridging wire BL1 is used to connect the first conductive layer 1P and each of the second bridging wires BL2 is used to connect to the M second conductive layers 2P arranged in the same row, it is It is beneficial to use COF (Chip ON Film) technology to combine a full-color LED display panel 1 with electrode-defined sub-pixels and a driving circuit module 2 into a full-color LED display device.

5 shows a schematic perspective view of a full-color LED display panel using electrodes to define sub-pixels and a driving circuit module of the present invention. Similarly, FIG. 5 does not depict the double-sided polished light-transmitting substrate 10 and the insulating layer 12, and the purpose is to clearly show that each of the elongated first semiconductor material layers 11NL is provided with an elongated The first conductive layer 1P also shows N second conductive layers 2P and N transparent conductive layers 1T on each of the elongated second semiconductor material layers 11PL. As shown in FIG. 5, the driving circuit module 2 has M first contacts 21 for electrically connecting with the M first common electrodes CE1, and the driving circuit module 2 also has N second contacts. The points 22 are used to electrically connect with the N second common electrodes CE2 respectively. On the other hand, FIG. 6 shows a top view of a full-color LED display panel and a driving circuit module using electrodes to define sub-pixels of the present invention. After comparing FIG. 5 and FIG. 6, it should be understood that FIG. 6 shows the full-color LED display panel 1 using electrodes to define sub-pixels of the present invention, which can also be combined with a driving circuit module through COG (Chip On Glass) technology. 2 is combined into a full-color LED display device.

Furthermore, FIG. 7 shows a schematic side cross-sectional view of a full-color LED display panel 1 using electrodes to define sub-pixels and a touch panel TP of the present invention. In an expanded embodiment, the full-color LED display device composed of the driving circuit module 2 and the full-color LED display panel 1 of the present invention using electrode-defined sub-pixels can be further combined with a touch panel TP A full-color LED touch display device is formed, and the touch panel TP is placed on the light conversion unit 15.

Manufacturing method of full-color LED display panel using electrodes to define sub-pixels

8A, 8B, and 8C show a flow chart of a manufacturing method of a full-color LED display panel using electrodes to define sub-pixels according to the present invention. In addition, FIGS. 9A to 9N are schematic manufacturing flowcharts of a full-color LED display panel using electrodes to define sub-pixels. As shown in FIGS. 8A and 9A, the manufacturing method first performs step S1 and step S2: a double-sided polished light-transmitting substrate 10 with a first surface 101 and a second surface 102 is provided, and a buffer layer is sequentially formed 11B, a first semiconductor material layer 11N, an active layer 11A, and a second semiconductor material layer 11P on the first surface 101. Next, as shown in FIGS. 9A and 9B, in step S3, a lithography etching technique and a first photoresist layer PR1 are used to fabricate completely penetrating the second semiconductor material layer 11P, the active layer 11A, and part of Etch the N long grooves RG1 of the first semiconductor material layer 11N, and then use the N long grooves The second semiconductor material layer 11P is divided into M elongated second semiconductor material layers 11PL by the shaped groove RG1, and the active layer 11A is divided into M elongated active layers 11AL at the same time, and then the first photoresist is removed Layer PR1.

As shown in FIG. 9C, in step S4, a second photoresist layer PR2 is used to cover the elongated second semiconductor material layer 11PL, and the sidewalls of each of the elongated grooves RG1 are covered There is the second photoresist layer PR2. Next, in step S5, a first conductive layer 1P is formed in each of the elongated grooves RG1, and then the second photoresist layer PR2 is removed (as shown in FIG. 9D). It is worth noting that in step S6, as shown in FIG. 9E, the present invention uses laser cutting technology to cut the bottom of each of the elongated grooves RG1 to polish the transparent substrate 10 on both sides. A plurality of cutting lanes 10G are formed on the first surface 101, and then the buffer layer 11B is divided into M elongated buffer layers 11BL by using the plurality of cutting lanes 10G, and the first semiconductor material layer 11N is divided into M long strip-shaped first semiconductor material layers 11NL. Continuing, as shown in FIG. 9F, in step S7, N third photoresist layers PR3 are formed on each of the elongated second semiconductor material layers 11PL.

As shown in FIG. 9G, in step S8, an insulating layer 12 is formed to cover the M elongated second semiconductor material layers 11PL, and the insulating layer 12 is filled with the M elongated grooves RG1 and the Among the multiple cutting lanes 10G. And, as shown in FIG. 9H, step S9 is to remove the M×N third photoresist layers PR3, so that the insulating layer 12 has M×N openings 120 for exposing The second semiconductor material layer 11P is formed. Further, as shown in FIG. 9I and FIG. 9J, in step S10, using the photolithography technique and a fourth photoresist layer PR4, M×N transparent conductive layers 1T are respectively formed on the Among the M×N openings 120, the fourth photoresist layer PR4 is then removed.

As shown in FIGS. 9K and 9L, in step S11, using photolithography and a fifth photoresist layer PR5, M×N second conductive layers 2P are formed on the insulating layer 12, and each One of the second conductive layers 2P partially covers one of the transparent conductive layers 1T. Finally, as shown in FIG. 9M and FIG. 9N, in step S12, after removing the fifth photoresist layer PR5, the M×N second conductive layers 2P are then arranged including M×N A light conversion unit 15 of the light conversion part completes the manufacture of a full-color LED display panel 1 using electrodes to define sub-pixels.

In this way, the above system has completely and clearly explained a full-color LED display panel using electrode-defined sub-pixels and the manufacturing method of the present invention; and from the above, it can be seen that the present invention has the following advantages:

(1) In the structure design of a full-color LED display panel using electrodes to define sub-pixels of the present invention, M long strip light-emitting structures are formed on a first surface of a double-sided polished light-transmitting substrate. In particular, each of the strip-shaped light-emitting structures includes a strip-shaped buffer layer, a strip-shaped first semiconductor material layer, a strip-shaped active layer, and a strip-shaped second semiconductor material layer, and an insulating layer The layer is formed on the first surface and covers the elongated light-emitting structure. M first conductive layers are also made in the insulating layer to And M×N transparent conductive layers, so that N first conductive layers are arranged on each of the elongated first semiconductor material layers, and N transparent conductive layers are arranged on the elongated second semiconductor material layers Conductive layer. Further, M×N second conductive layers are provided on the insulating layer, so that each transparent conductive layer is partially covered and connected by the second conductive layer. In this design, M first common electrode lines are used to connect M first conductive layers, and N second common electrode lines are used to connect M×N second conductive layers, so that a display driver chip can easily pass through COF or COG. And it is integrated with the composite full-color LED display panel of the present invention.

It must be emphasized that the above detailed description is a specific description of possible embodiments of the present invention, but this embodiment is not intended to limit the patent scope of the present invention. Any equivalent implementation or modification that does not deviate from the technical spirit of the present invention, All should be included in the patent scope of this case.

1‧‧‧Back contact full-color LED display panel

10‧‧‧Double-sided polished translucent substrate

101‧‧‧First surface

102‧‧‧Second surface

10G‧‧‧cutting road

11BL‧‧‧Long buffer layer

11NL‧‧‧Elongated first semiconductor material layer

11AL‧‧‧Strip active layer

11PL‧‧‧Long active layer

1T‧‧‧Transparent conductive layer

1P‧‧‧First conductive layer

2P‧‧‧Second conductive layer

12‧‧‧Insulation layer

12O‧‧‧Open

15‧‧‧Optical Conversion Unit

15R‧‧‧Red light conversion part

15G‧‧‧Green Light Conversion

Claims (23)

A full-color LED display panel using electrodes to define sub-pixels, including: A double-sided polished light-transmitting substrate with a first surface and a second surface; A buffer layer formed on the first surface; A first semiconductor material layer is formed on the buffer layer; wherein, laser cutting technology is used to cut the first semiconductor material layer and the buffer layer to polish the first surface of the transparent substrate on both sides A plurality of dicing lanes are fabricated on top, and then the plurality of dicing lanes are used to divide the buffer layer into M elongated buffer layers, and at the same time, the first semiconductor material layer is divided into M elongated first semiconductor material layers ； M elongated active layers are respectively formed on the M elongated first semiconductor material layers; M long strip-shaped second semiconductor material layers are respectively formed on the M long strip-shaped active layers; M first conductive layers, wherein they are respectively formed on the M long strip-shaped first semiconductor material layers; An insulating layer covering the M first conductive layers and the M long strip-shaped second semiconductor material layers, and filling the plurality of dicing channels; wherein, the insulating layer is provided with M× N openings; The M×N transparent conductive layers are respectively formed on the M elongated second semiconductor material layers through the M×N openings, so that each of the elongated second semiconductor material layers is formed with N of the transparent conductive layers; M×N second conductive layers are respectively formed on the M×N transparent conductive layers On; and A light conversion unit is arranged on the M×N second conductive layers and includes M×N light conversion parts corresponding to the M×N transparent conductive layers. The full-color LED display panel that uses electrodes to define sub-pixels as described in item 1 of the scope of patent application includes: uses electrodes to define sub-pixels The M first bridge wires are respectively connected to the M first conductive layers, and a first common electrode is formed on each of the first bridge wires. The full-color LED display panel that uses electrodes to define sub-pixels as described in item 2 of the scope of patent application includes: N second bridging wires, wherein each of the second bridging wires is connected to M of the second conductive layers arranged in the same row, and a second common electrode is formed on each of the second bridging wires. The full-color LED display panel using electrodes to define sub-pixels described in item 3 of the scope of patent application, wherein the full-color LED display panel using electrodes to define sub-pixels is combined with a drive circuit module to form a full-color LED A display device, wherein the driving circuit module has M first contacts for electrically connecting with the M first common electrodes, and the driving circuit module also has N second contacts for connecting with the M first common electrodes, respectively. The N second common electrodes are electrically connected. Use electrodes to define the full color of sub-pixels as described in item 4 of the scope of patent application The LED display panel, wherein the full-color LED display device and a touch panel are combined to form a full-color LED touch display device, and the touch panel is placed on the light conversion unit. The full-color LED display panel using electrodes to define sub-pixels described in the first item of the scope of patent application, wherein the double-sided polished light-transmitting substrate can be any of the following: double-sided polished sapphire substrate, double-sided polished spinel Substrate, double-sided polished silicon carbide substrate, double-sided polished glass substrate, or double-sided polished quartz substrate. The full-color LED display panel using electrodes to define sub-pixels described in the first item of the scope of patent application, wherein the process material of the insulating layer is an oxide, and the manufacturing material of the buffer layer can be any of the following: Doped gallium nitride (undoped GaN), aluminum nitride (AlN), or zinc oxide (ZnO). The full-color LED display panel that uses electrodes to define sub-pixels as described in item 1 of the scope of patent application, wherein the manufacturing material of the elongated first semiconductor material layer is n-type gallium nitride (n-type gallium nitride, n-type gallium nitride, n-type gallium nitride, n-type gallium nitride, n-type gallium nitride, n-type gallium nitride, n-type gallium nitride, n-type gallium nitride) -GaN), and the manufacturing material of the elongated second semiconductor material layer is p-type gallium nitride (p-GaN). The full-color LED display panel using electrode-defined sub-pixels described in the first item of the scope of patent application, wherein the elongated active layer is formed between the elongated first semiconductor material layer and the elongated second semiconductor material A multiple quantum well structure is formed between the layers, and the multiple quantum well structure is a multiple of an undoped gallium nitride (undoped GaN) layer and an indium gallium nitride (In _x Ga _1-x N) layer Interactive stacking structure. The full-color LED display panel using electrodes to define sub-pixels as described in item 9 of the scope of patent application, wherein corresponding to the multiple quantum well structure includes a plurality of the undoped gallium nitride layers stacked alternately with each other A plurality of the indium gallium nitride layers, the M×N light conversion parts include: a plurality of red light conversion parts, a plurality of green light conversion parts, and a plurality of empty conversion parts. The full-color LED display panel using electrode-defined sub-pixels described in the first item of the scope of patent application, wherein the elongated active layer is formed between the elongated first semiconductor material layer and the elongated second semiconductor material A multiple quantum well structure is formed between the layers, and the multiple quantum well structure is a multiple of an aluminum gallium nitride (Al _x Ga _1-x N) layer and an indium gallium nitride (In _x Ga _1-x N) layer Interactive stacking structure. The full-color LED display panel using electrodes to define sub-pixels as described in item 11 of the scope of patent application, wherein the multiple quantum well structure includes a plurality of the undoped gallium nitride layers stacked alternately with each other. Said indium gallium nitride layer, the M×N light conversion parts include: a plurality of red light conversion parts, a plurality of Several green light conversion parts and plural blue light conversion parts. A manufacturing method of a full-color LED display panel using electrodes to define sub-pixels, including the following steps: (1) Provide a double-sided polished light-transmitting substrate with a first surface and a second surface; (2) Sequentially forming a buffer layer, a first semiconductor material layer, an active layer, and a second semiconductor material layer on the first surface; (3) Using lithographic etching technology and a first photoresist layer to make N long grooves that completely penetrate the second semiconductor material layer, the active layer, and partially etch the first semiconductor material layer, and then use The N elongated grooves divide the second semiconductor material layer into M elongated second semiconductor material layers, and at the same time, divide the active layer into M elongated active layers, and then remove the first photoresist Floor; (4) Covering the elongated second semiconductor material layer with a second photoresist layer, and making the sidewalls of each of the elongated grooves covered with the second photoresist layer; (5) A first conductive layer is formed in each of the elongated grooves, and then the second photoresist layer is removed; (6) Using laser cutting technology to cut the bottom of each of the elongated grooves, so as to form a plurality of cutting channels on the first surface of the double-sided polished light-transmitting substrate, and then use the plurality of cutting channels. The cutting lane divides the buffer layer into M long strip buffer layers, and at the same time, the first semiconductor The bulk material layer is divided into M long strip-shaped first semiconductor material layers; (7) N third photoresist layers are formed on each of the elongated second semiconductor material layers; (8) An insulating layer is formed to cover the M long strip-shaped second semiconductor material layers, and the insulating layer is filled into the M long strip-shaped grooves and the plurality of cutting channels; (9) removing the M×N third photoresist layers, so that the insulating layer has M×N openings for exposing the second semiconductor material layer; (10) In the case of using photolithography and a fourth photoresist layer, M×N transparent conductive layers are formed in the M×N openings respectively, and then the fourth photoresist layer is removed; (11) Using photolithographic etching technology and a fifth photoresist layer, M×N second conductive layers are formed on the insulating layer, and each of the second conductive layers partially covers a Above the transparent conductive layer; and (12) After removing the fifth photoresist layer, a light conversion unit including M×N light conversion parts is disposed on the M×N second conductive layer to complete the use of electrodes to define all the sub-pixels Manufacture of color LED display panel. The method for manufacturing a full-color LED display panel using electrodes to define sub-pixels as described in item 13 of the scope of patent application, wherein each of the first conductive layers is connected to a first bridging wire, and M of the first Each of the bridge wires is provided with a first common electrode. The method for manufacturing a full-color LED display panel using electrodes to define sub-pixels described in item 14 of the scope of patent application, wherein the M second conductive layers arranged in the same row are simultaneously connected to a second bridge wire, And each of the N second bridge wires is provided with a second common electrode. The method for manufacturing a full-color LED display panel using electrode-defined sub-pixels as described in item 15 of the scope of patent application, wherein the full-color LED display panel using electrode-defined sub-pixels and a drive circuit module are combined into a whole For a color LED display device, the driving circuit module has M first contacts for electrically connecting with the M first common electrodes, and the driving circuit module also has N second contacts for connecting with The N second common electrodes are electrically connected. The method for manufacturing a full-color LED display panel using electrode-defined sub-pixels as described in item 13 of the scope of patent application, wherein the double-sided polished transparent substrate can be any of the following: double-sided polished sapphire substrate, double-sided polished Spinel substrate, double-sided polished silicon carbide substrate, double-sided polished glass substrate, or double-sided polished quartz substrate. The manufacturing method of a full-color LED display panel using electrode-defined sub-pixels as described in item 13 of the scope of patent application, wherein the insulating layer is made of an oxide, and the buffer layer can be made of any of the following Who: undoped GaN, aluminum nitride (AlN), or zinc oxide (ZnO). The method for manufacturing a full-color LED display panel using electrode-defined sub-pixels described in item 18 of the scope of patent application, wherein the manufacturing material of the first semiconductor material layer is n-type gallium nitride (n-type gallium nitride, n-type gallium nitride). -GaN), and the manufacturing material of the second semiconductor material layer is p-type gallium nitride (p-GaN). The method for manufacturing a full-color LED display panel using electrode-defined sub-pixels as described in item 18 of the scope of patent application, wherein the active layer forms a multiple quantum between the first semiconductor material layer and the second semiconductor material layer The well structure, and the multiple quantum well structure is a multiple alternating stack structure of _{an undoped GaN layer and an indium gallium nitride (In x} Ga _{1-x N) layer.} The method for manufacturing a full-color LED display panel using electrodes to define sub-pixels as described in item 20 of the scope of patent application, wherein corresponding to the multiple quantum well structure comprises a plurality of said undoped gallium nitride alternately stacked on each other And a plurality of indium gallium nitride layers, the M×N light conversion parts include: a plurality of red light conversion parts, a plurality of green light conversion parts, and a plurality of empty conversion parts. The method for manufacturing a full-color LED display panel using electrode-defined sub-pixels as described in item 18 of the scope of patent application, wherein the active layer forms a multiple quantum between the first semiconductor material layer and the second semiconductor material layer The well structure, and the multiple quantum well structure is a multiple alternate stacked structure _{of an aluminum gallium nitride (Al x} Ga _1-x N) layer and an indium gallium nitride (In _x Ga _{1-x N) layer.} The manufacturing method of a full-color LED display panel using electrodes to define sub-pixels as described in item 22 of the scope of the patent application, wherein the multiple quantum well structure includes a plurality of the undoped gallium nitride stacked alternately with each other Layer and a plurality of the indium gallium nitride layers, the M×N light conversion parts include: a plurality of red light conversion parts, a plurality of green light conversion parts, and a plurality of blue light conversion parts.

Images