TW202123449A - Complex full color led display panel and manufacturing method thereof - Google Patents

Abstract

The present invention discloses a complex full color LED display panel, comprising: M numbers of long shaped light-emitting (LSLE) structures formed on a first surface of a double side polished transparent substrate (DSPTS), wherein each LSLE structure comprises a long shaped buffer layer, a long shaped first semiconductor layer, a long shaped active layer, and a long shaped second semiconductor layer, and an insulation layer is formed for covering the LSLE structures. Moreover, there are M×N numbers of first conductive layer and M×N numbers of transparent conductive layer provided in the insulation layer, and M×N numbers of second conductive layer are formed on the insulation layer. As such, the M×N numbers of first conductive layer can be connected to M numbers of conductive lines, and the M×N numbers of second conductive layer can be connected to M numbers of conductive lines, such that the complex full color LED display panel of the present invention can be easily integrated with a display driver circuit by way of COF or COG.

Description

Composite full-color LED display panel and manufacturing method thereof

The present invention relates to the technical field of self-luminous display panels, in particular to a composite full-color LED display panel and a manufacturing method thereof.

It is known that the types of existing flat panel displays include liquid crystal displays (LCD), organic light-emitting diode (OLED) displays, and light-emitting diode (LED) displays. Engineers who are familiar with the design and manufacture of display panels must know that liquid crystal displays have the disadvantages of non-self-luminous, low efficiency, low dynamic range, and the need for polarization filtering. Although OLED displays are self-luminous displays, the low reliability and low efficiency (~5%QE) of blue OLED components have become the main drawbacks of OLED displays.

On the contrary, the production technology of red, green, and blue LED components is very mature, making LED displays have the advantages of self-luminescence, high efficiency, high dynamic range, high response speed, and a service life of more than 50,000 hours. Therefore, in the field of medium and small displays, LED displays have gradually replaced traditional liquid crystal displays and become medium and small displays. The mainstream. In recent years, LED display technology has become more mature and has been widely used in products such as smart phones, TVs, computer screens, and smart watches. Therefore, the industry is more committed to the development of sub-millimeter light-emitting diodes ( Mini LED) display and micro light emitting diode (Micro LED) display, so that the LED display has a higher resolution.

It is worth noting that, as shown in Figure 7 of Taiwan Patent No. I633645, in order to enable one anode terminal and one cathode terminal of each LED element of an LED display panel to be smoothly electrically connected to an external driving circuit, a plurality of anode terminals are included. A transparent conductive substrate connecting electrodes and a plurality of cathode terminal connecting electrodes is arranged between the external driving circuit and the anode and cathode terminals of each LED element, as an electrical connection between the external driving circuit and each LED element bridge.

Generally, the anode terminal connecting electrodes and the cathode terminal connecting electrodes of the transparent conductive substrate are made of indium tin oxide (ITO) or zinc oxide (ZnO). It must be considered that the resistance of these materials is higher than that of commonly used metal electrodes such as copper and silver. Electronic engineers who are familiar with the design and manufacture of display driver chips should understand that the relatively high resistance of the anode terminal connection electrodes and the cathode terminal connection electrodes will inevitably generate unexpected load effects, resulting in the display driver chip not being able to move perfectly. Each sub-pixel (ie, LED element) of the LED display panel reduces the user experience (UX).

From the above description, it can be known how to make an LED display panel with M×N LED light-emitting structures can be easily integrated with a display driver chip. Together, it is an issue that the industry urgently wants to solve. In view of this, the inventor of this case tried his best to research and create inventions, and finally developed a composite full-color LED display panel and manufacturing method of the present invention.

The main purpose of the present invention is to provide a composite full-color LED display panel, in which M elongated light-emitting structures are formed on a first surface of a double-sided polished light-transmitting substrate. In particular, each of the strip-shaped light-emitting structures includes a strip-shaped buffer layer, a strip-shaped first semiconductor material layer, a strip-shaped active layer, and a strip-shaped second semiconductor material layer, and an insulating layer The layer is formed on the first surface and covers the elongated light-emitting structure. M×N first conductive layers and M×N transparent conductive layers are further fabricated in the insulating layer, so that N first conductive layers are provided on each of the elongated first semiconductor material layers, and N transparent conductive layers are arranged on the elongated second semiconductor material layer. Further, M×N second conductive layers are provided on the insulating layer, so that each transparent conductive layer is partially covered and connected by the second conductive layer. In this design, M first common electrode lines are used to connect M×N first conductive layers and N second common electrode lines are used to connect M×N second conductive layers, so that a display driver chip can easily pass through COF or COG. It is integrated with the composite full-color LED display panel of the present invention.

In order to achieve the above objectives of the present invention, the present invention provides an embodiment of the composite full-color LED display panel, which includes:

A double-sided polished light-transmitting substrate with a first surface and a second surface;

A buffer layer formed on the first surface;

A first semiconductor material layer is formed on the buffer layer; wherein, laser cutting technology is used to cut the first semiconductor material layer and the buffer layer to polish the first surface of the transparent substrate on both sides A plurality of dicing lanes are fabricated on top, and then the plurality of dicing lanes are used to divide the buffer layer into M elongated buffer layers, and at the same time, the first semiconductor material layer is divided into M elongated first semiconductor material layers ；

M elongated active layers are respectively formed on the M elongated first semiconductor material layers;

M long strip-shaped second semiconductor material layers are respectively formed on the M long strip-shaped active layers;

M×N first conductive layers, wherein N first conductive layers are formed on each of the elongated first semiconductor material layers;

An insulating layer covering the M×N first conductive layers and the M long strip-shaped second semiconductor material layers, and filling the plurality of cutting channels; wherein, the insulating layer is provided with M×N openings;

The M×N transparent conductive layers are respectively formed on the M elongated second semiconductor material layers through the M×N openings, so that each of the elongated second semiconductor material layers is formed with N of the transparent conductive layers;

M×N second conductive layers are respectively formed on the M×N transparent conductive layers; and

A light conversion unit is arranged on the M×N second conductive layers and includes M×N light conversion parts corresponding to the M×N transparent conductive layers.

Moreover, the present invention also provides the aforementioned composite full-color LED display The manufacturing method of the panel includes the following steps:

(1) Provide a double-sided polished light-transmitting substrate with a first surface and a second surface;

(2) Sequentially forming a buffer layer, a first semiconductor material layer, an active layer, and a second semiconductor material layer on the first surface;

(3) Using lithographic etching technology and a first photoresist layer to make N long grooves that completely penetrate the second semiconductor material layer, the active layer, and partially etch the first semiconductor material layer, and then use The N elongated grooves divide the second semiconductor material layer into M elongated second semiconductor material layers, and at the same time, divide the active layer into M elongated active layers, and then remove the first photoresist Floor;

(4) Covering the elongated second semiconductor material layer with a second photoresist layer, and making the sidewalls of each of the elongated grooves covered with the second photoresist layer;

(5) M first conductive layers are formed in each of the elongated grooves;

(6) Using laser cutting technology to cut the bottom of each of the elongated grooves, so as to form a plurality of cutting channels on the first surface of the double-sided polished light-transmitting substrate, and then use the plurality of cutting channels. The dicing lane divides the buffer layer into M elongated buffer layers, and at the same time divides the first semiconductor material layer into M elongated first semiconductor material layers;

(7) N third photoresist layers are formed on each of the elongated second semiconductor material layers;

(8) An insulating layer is formed to cover the M long strip-shaped second semiconductor material layers, and the insulating layer is filled into the M long strip-shaped grooves and the plurality of cutting channels;

(9) removing the M×N third photoresist layers, so that the insulating layer has M×N openings for exposing the second semiconductor material layer;

(10) In the case of using photolithography and a fourth photoresist layer PR4, M×N transparent conductive layers are formed in the M×N openings;

(11) Using photolithographic etching technology and a fifth photoresist layer, M×N second conductive layers are formed on the insulating layer, and each of the second conductive layers partially covers a Above the transparent conductive layer; and

(12) After the fifth photoresist layer is removed, a light conversion unit including M×N light conversion parts is arranged on the M×N second conductive layer to complete a composite full-color LED display panel Make.

In a feasible embodiment, the composite full-color LED display panel of the present invention further includes:

M first bridging wires, wherein each of the first bridging wires is connected to the N first conductive layers arranged in the same column, and a first common electrode is formed on each of the first bridging wires.

In a feasible embodiment, the composite full-color LED display panel of the present invention further includes:

N second bridging wires, wherein each of the second bridging wires is connected to M of the second conductive layers arranged in the same row, and a second common electrode is formed on each of the second bridging wires.

In a feasible embodiment, the composite full-color LED display of the present invention The display panel and a driving circuit module are combined to form a full-color LED display device. The driving circuit module has M first contacts for electrically connecting with the M first common electrodes, and the driving circuit module also There are N second contacts for electrically connecting with the N second common electrodes respectively.

In a possible embodiment, the full-color LED display device including the composite full-color LED display panel of the present invention and the drive circuit module is further combined with a touch panel to form a full-color LED touch display device, and the touch The panel is placed on the light conversion unit.

In the foregoing embodiment of the composite full-color LED display panel of the present invention, the double-sided polished transparent substrate can be any of the following: double-sided polished sapphire substrate, double-sided polished spinel substrate, double-sided polished silicon carbide Substrate, double-sided polished glass substrate, or double-sided polished quartz substrate.

In the foregoing embodiment of the composite full-color LED display panel of the present invention, the insulating layer is made of an oxide, and the buffer layer can be made of any one of the following: undoped gallium nitride ( undoped GaN), aluminum nitride (AlN), or zinc oxide (ZnO).

In the foregoing embodiment of the composite full-color LED display panel of the present invention, the elongated active layer forms a multiple quantum well between the elongated first semiconductor material layer and the elongated second semiconductor material layer Structure, and the multiple quantum well structure is a multiple alternate stacked structure of an undoped GaN layer and an indium gallium nitride (In _x Ga _{1-x N) layer.} And, corresponding to the multiple quantum well structure including a plurality of undoped gallium nitride layers and a plurality of indium gallium nitride layers stacked alternately with each other, the M×N light conversion parts include: a plurality of red A light conversion section, a plurality of green light conversion sections, and a plurality of empty conversion sections.

In the foregoing embodiment of the composite full-color LED display panel of the present invention, the elongated active layer forms a multiple quantum well between the elongated first semiconductor material layer and the elongated second semiconductor material layer Structure, and the multiple quantum well structure is a multiple alternating stack structure _{of an aluminum gallium nitride (Al x} Ga _1-x N) layer and an indium gallium nitride (In _x Ga _{1-x N) layer.} And, corresponding to the multiple quantum well structure including a plurality of undoped gallium nitride layers and a plurality of indium gallium nitride layers stacked alternately with each other, the M×N light conversion parts include: a plurality of red A light conversion section, a plurality of green light conversion sections, and a plurality of blue light conversion sections.

<The present invention>

1‧‧‧Composite full-color LED display panel

10‧‧‧Double-sided polished translucent substrate

101‧‧‧First surface

102‧‧‧Second surface

10G‧‧‧cutting road

11B‧‧‧Buffer layer

11BL‧‧‧Long buffer layer

11N‧‧‧First semiconductor material layer

11NL‧‧‧Elongated first semiconductor material layer

11A‧‧‧Active layer

11AL‧‧‧Strip active layer

11P‧‧‧Second semiconductor material layer

11PL‧‧‧Long strip of second semiconductor material layer

1T‧‧‧Transparent conductive layer

1P‧‧‧First conductive layer

2P‧‧‧Second conductive layer

12‧‧‧Insulation layer

12O‧‧‧Open

15‧‧‧Optical Conversion Unit

15R‧‧‧Red light conversion part

15G‧‧‧Green Light Conversion

15B‧‧‧Blu-ray Conversion

15N‧‧‧Air Conversion Department

BL1‧‧‧First bridge wire

BL2‧‧‧Second bridge wire

CE1‧‧‧First common electrode

CE2‧‧‧Second common electrode

2‧‧‧Drive circuit module

21‧‧‧First contact

22‧‧‧Second contact

TP‧‧‧Touch Panel

S1-S‧‧‧Step

PR1‧‧‧First photoresist layer

PR2‧‧‧Second photoresist layer

PR3‧‧‧The third photoresist layer

PR4‧‧‧The fourth photoresist layer

PR5‧‧‧Fifth photoresist layer

RG1‧‧‧Long groove

<Learning>

no

1A and 1B show schematic side cross-sectional views of a composite full-color LED display panel of the present invention;

Fig. 2A shows a first schematic perspective view of the light conversion unit;

Fig. 2B shows a second schematic perspective view of the light conversion unit;

3A shows a first schematic perspective view of the composite full-color LED display panel and a driving circuit module of the present invention;

Figure 3B shows the composite full-color LED display panel and a driver of the present invention A second schematic perspective view of the circuit module;

4 shows a top view of the composite full-color LED display panel and a driving circuit module of the present invention;

5 shows a schematic side sectional view of the composite full-color LED display panel and a touch panel of the present invention;

6A, 6B and 6C show a flow chart of a method for manufacturing a composite full-color LED display panel of the present invention; and

7A to 7M show a schematic manufacturing flow chart of the composite full-color LED display panel of the present invention.

In order to be able to more clearly describe the composite full-color LED display panel and its manufacturing method proposed by the present invention, the preferred embodiments of the present invention will be described in detail below in conjunction with the drawings.

Structure of composite full-color LED display panel

1A and 1B show schematic side cross-sectional views of a composite full-color LED display panel of the present invention. The composite full-color LED display panel 1 of the present invention mainly includes: a double-sided polished light-transmitting substrate 10 having a first surface 101 and a second surface 102, M elongated buffer layers 11BL, and M elongated First semiconductor material layer 11NL, M elongated active layers 11AL, M elongated second semiconductor material layers 11PL, M×N first conductive layers 1P, an insulating layer 12, M×N transparent conductive layers 1T, M×N The second conductive layer 2P and a light conversion unit 15. In FIG. 1A, the light conversion unit 15 is disposed on the M×N second conductive layers 2P. On the other hand, FIG. 1B shows that the light conversion unit 15 may also be disposed on the second surface 102 of the double-sided polished light-transmitting substrate 10.

In a feasible embodiment, the double-sided polished light-transmitting substrate 10 can be any of the following: double-sided polished sapphire substrate, double-sided polished spinel substrate, double-sided polished silicon carbide substrate, double-sided polished glass substrate, or Double-sided polished quartz substrate. In particular, when a buffer layer 11B and a first semiconductor material layer 11N are formed on the first surface 101, the present invention uses laser cutting technology to cut the first semiconductor material layer 11N and the buffer layer 11B. , To fabricate a plurality of cutting lanes 10G (as shown in FIG. 1A) on the first surface 101 of the double-sided polished light-transmitting substrate 10, and then use the plurality of cutting lanes 10G to divide the buffer layer 11B into M The elongated buffer layers 11BL are divided into M of the elongated first semiconductor material layers 11NL at the same time the first semiconductor material layer 11N is divided. In addition, the M elongated active layers 11AL are respectively formed on the M elongated first semiconductor material layers 11NL, and the M elongated second semiconductor material layers 11PL are respectively formed on the M elongated Above the active layer 11AL. As shown in FIG. 1A, N first conductive layers 1P are formed on each of the elongated first semiconductor material layers 11NL, so that the composite full-color LED display panel 1 includes M×N The first conductive layer 1P.

In addition, the insulating layer 12 covers the M×N first conductive layers 1P On top of the M long strip-shaped second semiconductor material layers 11PL, and filled into the plurality of dicing lanes 10G. In a feasible embodiment, the processing material of the insulating layer 12 is an oxide, and FIG. 1A shows that the insulating layer 12 is provided with M×N openings 120. In particular, in the present invention, the M×N transparent conductive layers 1T are formed on the M long strip-shaped second semiconductor material layers 11PL through the M×N openings 120 respectively, so that each of the long strips N transparent conductive layers 1T are formed on the shaped second semiconductor material layer 11PL. Further, the M×N second conductive layers 2P are respectively formed on the M×N transparent conductive layers, and the light conversion unit 15 is disposed on the M×N second conductive layers 2P (as shown in FIG. Shown in 1A). It is worth noting that a total of N transparent conductive layers 1T are provided on each elongated second semiconductor material layer 11PL, and each of the transparent conductive layers 1T is used to enhance the elongated second semiconductor material. In addition to the uniformity of the injected current of the material layer 11PL, it is also used as a light outcoupling member with a specific area. In other words, there are a total of N light out-coupling elements (that is, the transparent conductive layer 1T) on each elongated second semiconductor material layer 11PL.

In more detail, the process material of the aforementioned long buffer layer 11BL is usually undoped GaN, aluminum nitride (AlN), or zinc oxide (ZnO). On the other hand, the manufacturing material of the elongated first semiconductor material layer 11NL is n-type gallium nitride (n-GaN), and the manufacturing material of the elongated second semiconductor material layer 11PL is P-type gallium nitride (p-type gallium nitride, p-GaN). Moreover, the elongated active layer 11AL usually forms a multiple quantum well structure between the elongated first semiconductor material layer 11NL and the elongated second semiconductor material layer 11PL. It is worth noting that the multiple quantum well structure is a multiple interactive stack structure of an undoped gallium nitride (undoped GaN) layer and an indium gallium nitride (In _x Ga _{1-x N) layer.} In the case of applying voltage to drive the elongated first semiconductor material layer 11NL and the elongated second semiconductor material layer 11PL, the M elongated active layers 11AL will pass through the M×N The transparent conductive layer 1T (ie, the light coupling-out member) emits a blue light. On the other hand, if the multiple quantum well structure is a _{multiple alternate stacked structure of an aluminum gallium nitride (Al x} Ga _1-x N) layer and an indium gallium nitride (In _x Ga _1-x N) layer, as long as A voltage is applied to drive the elongated first semiconductor material layer 11NL and the elongated second semiconductor material layer 11PL, and the M elongated active layers 11AL will pass through the M×N transparent conductive layers 1T ( That is, the optical coupling output member emits a purple light.

Continue to refer to FIGS. 2A and 2B, which show a first schematic perspective view and a second schematic perspective view of the light conversion unit 15 respectively. In an embodiment of the present invention, as shown in FIG. 1A, the light conversion unit 15 is disposed on the M×N second conductive layers 2P, and includes M×N light conversion parts respectively corresponding to the M×N transparent conductive layers 1T. It must be added that, as shown in FIG. 2A, corresponding to each of the light coupling-out members (ie, the transparent conductive layer 1T) emits a blue light, the present invention makes the M× of the light conversion unit 15 The N light conversion parts include a plurality of red light conversion parts 15R, a plurality of green light conversion parts 15G, and a plurality of blank conversion parts 15N. In an embodiment, the red light conversion portion 15R and the green light conversion portion 15G are respectively composed of a red light conversion material and a green light conversion material, and the red light conversion material and the green light conversion material may be phosphors or Quantum dots.

On the other hand, as shown in FIG. 2B, corresponding to each of the light coupling-out elements (that is, the transparent conductive layer 1T) emits a purple light, and the M×N light conversion parts of the light conversion unit 15 include: A plurality of red light conversion parts 15R, a plurality of green light conversion parts 15G, and a plurality of blue light conversion parts 15B. In an embodiment, the red light conversion portion 15R, the green light conversion portion 15G, and the blue light conversion portion 15B are respectively composed of a red light conversion material, a green light conversion material, and a blue light conversion material, and the red light conversion material, Both the green light conversion material and the blue light conversion material can be phosphors or quantum dots. It can be understood that the M×N transparent conductive layers 1T and the M×N light conversion parts are regarded as M×N sub-pixels. It is supplemented that the transparent conductive layer 1T may be an indium tin oxide (ITO) layer, or a thin metal layer (<10 nm) such as gold, silver, platinum, copper, aluminum, chromium, palladium, and rhodium.

3A and 3B show first and second schematic perspective views of the composite full-color LED display panel and a driving circuit module of the present invention. In particular, FIGS. 3A and 3B do not depict the double-sided polished light-transmitting substrate 10 and the insulating layer 12, and the purpose is to clearly show the N on each of the elongated first semiconductor material layers 11NL. A first conductive layer 1P, and show Shown are N second conductive layers 2P and N transparent conductive layers 1T on each of the elongated second semiconductor material layers 11PL. According to the design of the present invention, the composite full-color LED display panel 1 further includes M first bridging wires BL1, wherein each of the first bridging wires BL1 is arranged in the same row as the N first conductive wires. The layers 1P are connected, and a first common electrode CE1 is formed on each of the first bridge wires BL1. In addition, the composite full-color LED display panel 1 further includes N second bridge wires BL2, wherein each of the second bridge wires BL2 is connected to the M second conductive layers 2P arranged in the same row. And a second common electrode CE2 is formed on each of the second bridging wires BL2.

It can be seen from FIG. 1A that each of the first conductive layers 1P is covered by an insulating layer 12, and each of the second conductive layers 2P is disposed on the insulating layer 12. Therefore, when each of the first bridging wires BL1 is connected to the N first conductive layers 1P arranged in the same column, and each of the second bridging wires BL2 is used with the M second conductive layers arranged in the same row. When the conductive layer 2P is connected, it is advantageous to use COF (Chip ON Film) technology to combine the composite full-color LED display panel 1 and a driving circuit module 2 of the present invention into a full-color LED display device. As shown in FIGS. 3A and 3B, the driving circuit module 2 has M first contacts 21 for electrically connecting with the M first common electrodes CE1, and the driving circuit module 2 also has N The second contacts 22 are used for electrically connecting with the N second common electrodes CE2 respectively. On the other hand, Figure 4 shows the composite full-color LED display panel of the present invention and a Top view of the drive circuit module. After comparing FIG. 3A with FIG. 4, it should be understood that FIG. 4 shows that the composite full-color LED display panel 1 of the present invention can also be combined with a driving circuit module 2 to form a full-color display panel through COG (Chip On Glass) technology. LED display device.

Further, FIG. 5 shows a schematic side cross-sectional view of the composite full-color LED display panel 1 and a touch panel TP of the present invention. In an expanded embodiment, the full-color LED display device composed of the driving circuit module 2 and the composite full-color LED display panel 1 of the present invention can be further combined with a touch panel TP to form a full-color LED touch A display device, and the touch panel TP is placed on the light conversion unit 15.

Manufacturing method of composite full-color LED display panel

6A, 6B, and 6C show a flowchart of a method for manufacturing a composite full-color LED display panel of the present invention. 7A to 7M are schematic manufacturing flowcharts of the composite full-color LED display panel. As shown in FIGS. 6A and 7A, the manufacturing method first performs step S1 and step S2: a double-sided polished transparent substrate 10 with a first surface 101 and a second surface 102 is provided, and a buffer layer is sequentially formed 11B, a first semiconductor material layer 11N, an active layer 11A, and a second semiconductor material layer 11P on the first surface 101. Next, as shown in FIGS. 7A and 7B, in step S3, a photolithography technique and a first photoresist layer PR1 are used to fabricate completely through the second semiconductor material layer 11P, the active layer 11A, and part of Etch N long grooves of the first semiconductor material layer 11N RG1, and then use the N elongated grooves RG1 to divide the second semiconductor material layer 11P into M elongated second semiconductor material layers 11PL, and at the same time divide the active layer 11A into M elongated active layers 11AL, then the first photoresist layer PR1 is removed.

As shown in FIG. 7C, in step S4, a second photoresist layer PR2 is used to cover the elongated second semiconductor material layer 11PL, and the sidewalls of each of the elongated grooves RG1 are covered There is the second photoresist layer PR2. Next, in step S5, M first conductive layers 1P are formed in each of the elongated grooves RG1 (as shown in FIG. 7D). It is worth noting that in step S6, as shown in FIG. 7E, the present invention uses laser cutting technology to cut the bottom of each of the elongated grooves RG1 to polish the transparent substrate 10 on both sides. A plurality of cutting lanes 10G are formed on the first surface 101, and then the buffer layer 11B is divided into M elongated buffer layers 11BL by using the plurality of cutting lanes 10G, and the first semiconductor material layer 11N is divided into M long strip-shaped first semiconductor material layers 11NL. Continuing, as shown in FIG. 7F, in step S7, N third photoresist layers PR3 are formed on each of the elongated second semiconductor material layers 11PL.

As shown in FIG. 7G, in step S8, an insulating layer 12 is formed to cover the M elongated second semiconductor material layers 11PL, and the insulating layer 12 is filled with the M elongated grooves RG1 and the Among the multiple cutting lanes 10G. And, as shown in FIG. 7H, step S9 is to remove the M×N third photoresist layers PR3, so that the insulating layer 12 has M×N openings 120 for exposing The second semiconductor material layer 11P is formed. Further, as shown in FIG. 7I and FIG. 7J, in step S10, using the photolithography technique and a fourth photoresist layer PR4, M×N transparent conductive layers 1T are respectively formed on the Among M×N openings 120.

As shown in FIGS. 7K and 7L, in step S11, using photolithography and a fifth photoresist layer PR5, M×N second conductive layers 2P are formed on the insulating layer 12, and each One of the second conductive layers 2P partially covers one of the transparent conductive layers 1T. Finally, as shown in FIG. 7M, in step S12, after the fifth photoresist layer PR5 is removed, then the M×N second conductive layers 2P are disposed on the M×N second conductive layer 2P including M×N light conversion parts. A light conversion unit 15 completes the production of a composite full-color LED display panel 1.

In this way, the above system has completely and clearly explained a composite full-color LED display panel of the present invention and its manufacturing method; and, from the above, it can be seen that the present invention has the following advantages:

(1) In the structural design of the composite full-color LED display panel of the present invention, M elongated light-emitting structures are formed on a first surface 101 of a double-sided polished light-transmitting substrate 10. In particular, each of the strip-shaped light-emitting structures includes a strip-shaped buffer layer 11BL, a strip-shaped first semiconductor material layer 11NL, a strip-shaped active layer 11AL, and a strip-shaped second semiconductor material layer 11PL , And an insulating layer 12 is formed on the first surface 102 and covers the elongated light-emitting structure. The insulating layer 12 is further made with M× N first conductive layers 1P and M×N transparent conductive layers 1T, so that each of the elongated first semiconductor material layers 11NL is provided with N first conductive layers 1P, and the elongated second N transparent conductive layers 1T are provided on the semiconductor material layer 11PL. Further, M×N second conductive layers 2P are provided on the insulating layer 12, so that each transparent conductive layer 1T is partially covered and connected by the second conductive layer 2P. In this design, M first common electrode lines BL1 are used to connect M×N first conductive layers 1P, and N second common electrode lines BL2 are used to connect M×N second conductive layers 2P, so that a display driver chip is easily penetrated. COF or COG is integrated with the composite full-color LED display panel 1 of the present invention.

It must be emphasized that the above detailed description is a specific description of possible embodiments of the present invention, but this embodiment is not intended to limit the patent scope of the present invention. Any equivalent implementation or modification that does not deviate from the technical spirit of the present invention, All should be included in the patent scope of this case.

1‧‧‧Composite full-color LED display panel

10‧‧‧Double-sided polished translucent substrate

101‧‧‧First surface

102‧‧‧Second surface

10G‧‧‧cutting road

11BL‧‧‧Long buffer layer

11NL‧‧‧Elongated first semiconductor material layer

11AL‧‧‧Strip active layer

11PL‧‧‧Long active layer

1T‧‧‧Transparent conductive layer

1P‧‧‧First conductive layer

2P‧‧‧Second conductive layer

12‧‧‧Insulation layer

12O‧‧‧Open

15‧‧‧Optical Conversion Unit

15R‧‧‧Red light conversion part

15G‧‧‧Green Light Conversion

Claims (23)

A composite full-color LED display panel, including: A double-sided polished light-transmitting substrate with a first surface and a second surface; A buffer layer formed on the first surface; A first semiconductor material layer is formed on the buffer layer; wherein, laser cutting technology is used to cut the first semiconductor material layer and the buffer layer to polish the first surface of the transparent substrate on both sides A plurality of dicing lanes are fabricated on top, and then the plurality of dicing lanes are used to divide the buffer layer into M elongated buffer layers, and at the same time, the first semiconductor material layer is divided into M elongated first semiconductor material layers ； M elongated active layers are respectively formed on the M elongated first semiconductor material layers; M long strip-shaped second semiconductor material layers are respectively formed on the M long strip-shaped active layers; M×N first conductive layers, wherein N first conductive layers are formed on each of the elongated first semiconductor material layers; An insulating layer covering the M×N first conductive layers and the M long strip-shaped second semiconductor material layers, and filling the plurality of cutting channels; wherein, the insulating layer is provided with M×N openings; The M×N transparent conductive layers are respectively formed on the M elongated second semiconductor material layers through the M×N openings, so that each of the elongated second semiconductor material layers is formed with N of the transparent conductive layers; M×N second conductive layers are respectively formed on the M×N transparent conductive layers On; and A light conversion unit is arranged on the M×N second conductive layers and includes M×N light conversion parts corresponding to the M×N transparent conductive layers. The composite full-color LED display panel described in item 1 of the scope of patent application further includes: M first bridging wires, wherein each of the first bridging wires is connected to the N first conductive layers arranged in the same column, and a first common electrode is formed on each of the first bridging wires. The composite full-color LED display panel described in item 2 of the scope of patent application includes: N second bridging wires, wherein each of the second bridging wires is connected to M of the second conductive layers arranged in the same row, and a second common electrode is formed on each of the second bridging wires. The composite full-color LED display panel described in item 3 of the scope of patent application, wherein the composite full-color LED display panel and a drive circuit module are combined to form a full-color LED display device, and the drive circuit module has M The first contacts are used for electrically connecting with the M first common electrodes, and the driving circuit module further has N second contacts for electrically connecting with the N second common electrodes, respectively. The composite full-color LED display panel described in item 4 of the scope of patent application, wherein the full-color LED display device and a touch panel are combined to form a full-color LED touch display device, and the touch panel is placed in the light Above the conversion unit. The composite full-color LED display panel described in item 1 of the scope of patent application, wherein the double-sided polished light-transmitting substrate can be any of the following: double-sided polished sapphire substrate, double-sided polished spinel substrate, double-sided polished Silicon carbide substrate, double-sided polished glass substrate, or double-sided polished quartz substrate. The composite full-color LED display panel described in item 1 of the scope of patent application, wherein the insulating layer is made of an oxide, and the buffer layer can be made of any one of the following: undoped nitride Gallium (undoped GaN), aluminum nitride (AlN), or zinc oxide (ZnO). The composite full-color LED display panel described in item 1 of the scope of patent application, wherein the manufacturing material of the elongated first semiconductor material layer is n-type gallium nitride (n-GaN), and The manufacturing material of the elongated second semiconductor material layer is p-type gallium nitride (p-GaN). The composite full-color LED display panel described in item 1 of the scope of patent application, wherein the elongated active layer forms a multiple layer between the elongated first semiconductor material layer and the elongated second semiconductor material layer. Quantum well structure, and the multiple quantum well structure is a multiple alternate stacked structure of _{an undoped GaN layer and an indium gallium nitride (In x} Ga _{1-x N) layer.} The composite full-color LED display panel according to item 9 of the scope of patent application, wherein the multiple quantum well structure includes a plurality of the undoped gallium nitride layers and a plurality of the nitrogen layers alternately stacked with each other. Indium gallium oxide layer, the M×N light conversion parts include: a plurality of red light conversion parts, a plurality of green light conversion parts, and a plurality of empty conversion parts. The composite full-color LED display panel described in item 1 of the scope of patent application, wherein the elongated active layer forms a multiple layer between the elongated first semiconductor material layer and the elongated second semiconductor material layer. Quantum well structure, and the multiple quantum well structure is a multiple alternate stack structure _{of an aluminum gallium nitride (Al x} Ga _1-x N) layer and an indium gallium nitride (In _x Ga _{1-x N) layer.} The composite full-color LED display panel described in item 11 of the scope of patent application, wherein the multiple quantum well structure includes a plurality of the undoped gallium nitride layers and a plurality of the nitride layers alternately stacked with each other. Indium gallium layer, the M×N light conversion parts include: a plurality of red light conversion parts, a plurality of green light conversion parts, and a plurality of blue light conversion parts. A method for manufacturing a composite full-color LED display panel includes the following steps: (1) Provide a double-sided polished light-transmitting substrate with a first surface and a second surface; (2) Sequentially forming a buffer layer, a first semiconductor material layer, an active layer, and a second semiconductor material layer on the first surface; (3) Using lithographic etching technology and a first photoresist layer to make N long grooves that completely penetrate the second semiconductor material layer, the active layer, and partially etch the first semiconductor material layer, and then use The N elongated grooves divide the second semiconductor material layer into M elongated second semiconductor material layers, and at the same time, divide the active layer into M elongated active layers, and then remove the first photoresist Floor; (4) Covering the elongated second semiconductor material layer with a second photoresist layer, and making the sidewalls of each of the elongated grooves covered with the second photoresist layer; (5) M first conductive layers are formed in each of the elongated grooves, and then the fourth photoresist layer is removed; (6) Using laser cutting technology to cut the bottom of each of the elongated grooves, so as to form a plurality of cutting channels on the first surface of the double-sided polished light-transmitting substrate, and then use the plurality of cutting channels. The dicing lane divides the buffer layer into M elongated buffer layers, and at the same time divides the first semiconductor material layer into M elongated first semiconductor material layers; (7) N third photoresist layers are formed on each of the elongated second semiconductor material layers; (8) An insulating layer is formed to cover the M long strip-shaped second semiconductor material layers, and the insulating layer is filled into the M long strip-shaped grooves and the plurality of cutting channels; (9) removing the M×N third photoresist layers, so that the insulating layer has M×N openings for exposing the second semiconductor material layer; (10) In the case of using a photolithographic etching technique and a fourth photoresist layer, M×N transparent conductive layers are respectively formed in the M×N openings; (11) Using photolithographic etching technology and a fifth photoresist layer, M×N second conductive layers are formed on the insulating layer, and each of the second conductive layers partially covers a Above the transparent conductive layer; and (12) After the fifth photoresist layer is removed, a light conversion unit including M×N light conversion parts is arranged on the M×N second conductive layer to complete a composite full-color LED display panel Make. The method for manufacturing a composite full-color LED display panel according to item 13 of the scope of the patent application, wherein the N first conductive layers arranged in the same row are simultaneously connected to a first bridging wire, and the M Each of the first bridging wires is provided with a first common electrode. The method for manufacturing a composite full-color LED display panel according to item 14 of the scope of patent application, wherein the M second conductive layers arranged in the same row are simultaneously connected to one second bridge wire, and N Each of the second bridging wires is provided with a second common electrode. The method for manufacturing a composite full-color LED display panel according to item 15 of the scope of patent application, wherein the composite full-color LED display panel and a drive circuit module are combined to form a full-color LED display device, and the drive circuit module There are M first contacts for electrically connecting with the M first common electrodes, and the driving circuit module also has N second contacts for electrically connecting with the N second common electrodes, respectively . The method for manufacturing a composite full-color LED display panel described in item 13 of the scope of patent application, wherein the double-sided polished light-transmitting substrate can be any of the following: double-sided polished sapphire substrate, double-sided polished spinel substrate, Double-sided polished silicon carbide substrate, double-sided polished glass substrate, or double-sided polished quartz substrate. The manufacturing method of the composite full-color LED display panel described in item 13 of the scope of patent application, wherein the manufacturing material of the insulating layer is an oxide, and the manufacturing material of the buffer layer can be any of the following: undoped Of gallium nitride (undoped GaN), aluminum nitride (AlN), or zinc oxide (ZnO). The method for manufacturing a composite full-color LED display panel described in item 18 of the scope of patent application, wherein the manufacturing material of the first semiconductor material layer is n-type gallium nitride (n-GaN), and The manufacturing material of the second semiconductor material layer is p-type gallium nitride (p-type gallium nitride, p-GaN). The method for manufacturing a composite full-color LED display panel according to item 18 of the scope of patent application, wherein the active layer forms a multiple quantum well structure between the first semiconductor material layer and the second semiconductor material layer, and the The multiple quantum well structure is a multiple alternate stacked structure of an undoped GaN layer and an indium gallium nitride (In _x Ga _{1-x N) layer.} The method for manufacturing a composite full-color LED display panel according to item 20 of the scope of patent application, wherein the multiple quantum well structure includes a plurality of the undoped gallium nitride layers and a plurality of all stacked alternately with each other. In the indium gallium nitride layer, the M×N light conversion parts include: a plurality of red light conversion parts, a plurality of green light conversion parts, and a plurality of empty conversion parts. The method for manufacturing a composite full-color LED display panel according to item 18 of the scope of patent application, wherein the active layer forms a multiple quantum well structure between the first semiconductor material layer and the second semiconductor material layer, and the The multiple quantum well structure is a multiple alternate stacked structure _{of an aluminum gallium nitride (Al x} Ga _1-x N) layer and an indium gallium nitride (In _x Ga _{1-x N) layer.} The method for manufacturing a composite full-color LED display panel according to item 22 of the scope of the patent application, wherein the multiple quantum well structure includes a plurality of the undoped gallium nitride layers and a plurality of all stacked alternately with each other. Indium Gallium Nitride Layer, the M×N light conversion parts include: a plurality of red light conversion parts, a plurality of green light conversion parts, and a plurality of blue light conversion parts.

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