TW202118895A - Heating apparatus and chemical vapor deposition system - Google Patents
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本發明是有關於一種成膜設備,且特別是有關於一種加熱裝置及化學氣相沉積系統。The present invention relates to a film forming equipment, and particularly relates to a heating device and a chemical vapor deposition system.
在發光二極體材料的操作性能以及可靠性不斷地提升下,其應用的領域也逐漸多元化,例如照明裝置、顯示器、背光模組等。為了滿足各種使用需求下的性能規格,不同樣式或材料組成的發光二極體元件不斷地挑戰相關廠商的設計與量產能力。舉例來說,應用於顯示器的微型發光二極體,其磊晶層的膜厚均勻性需要達到一定的水準才能滿足所需的顯示品質(例如演色性或顯示面的亮度均勻性)要求。As the operating performance and reliability of light-emitting diode materials continue to improve, their application fields are gradually diversified, such as lighting devices, displays, and backlight modules. In order to meet the performance specifications under various usage requirements, light-emitting diode components of different styles or materials continue to challenge the design and mass production capabilities of related manufacturers. For example, for micro light emitting diodes used in displays, the film thickness uniformity of the epitaxial layer needs to reach a certain level to meet the required display quality (such as color rendering or brightness uniformity of the display surface) requirements.
在形成微型發光二極體元件之磊晶薄膜的製造過程中,化學氣相沉積(chemical vapor deposition,CVD)技術是較常使用的技術手段之一。為了取得均勻性較佳的磊晶薄膜,化學氣相沉積設備的腔室內大都置入可旋轉的承載台(susceptor)與多個載盤(satellite disc)。載盤用以承載磊晶基板並相對於一自轉軸轉動而形成一自轉系統,承載台用以帶動這些載盤相對於一公轉軸轉動而形成一公轉系統。當磊晶基板由加熱器獲得熱能時,載盤的公轉與自轉有助於提升磊晶基板的溫度均勻性。In the manufacturing process of forming the epitaxial film of the miniature light-emitting diode device, chemical vapor deposition (CVD) technology is one of the more commonly used technical means. In order to obtain an epitaxial film with better uniformity, a rotatable susceptor and multiple satellite discs are usually placed in the chamber of the chemical vapor deposition equipment. The carrier plate is used to carry the epitaxial substrate and rotate relative to a rotation axis to form a rotation system, and the carrier table is used to drive the carrier plate to rotate relative to a revolution axis to form a revolution system. When the epitaxial substrate receives heat energy from the heater, the revolution and rotation of the carrier disk help to improve the temperature uniformity of the epitaxial substrate.
然而,伴隨著磊晶基板尺寸的增加以及發光二極體元件尺寸的縮減,上述的承載台與載盤的配置關係已無法滿足磊晶基板於成膜時所需的溫度均勻性。However, with the increase in the size of the epitaxial substrate and the reduction in the size of the light-emitting diode element, the above-mentioned arrangement relationship between the carrier table and the carrier can no longer meet the temperature uniformity required for the film formation of the epitaxial substrate.
本發明提供一種加熱裝置,可使磊晶基板的溫度均勻性較佳。The invention provides a heating device, which can make the temperature uniformity of the epitaxial substrate better.
本發明提供一種化學氣相沉積系統,具有較佳的成膜均勻性。The present invention provides a chemical vapor deposition system with better uniformity of film formation.
本發明的加熱裝置,包括承載台、複數個載盤、第一加熱器以及第二加熱器。承載台具有公轉軸。複數個載盤設置於承載台上。承載台帶動這些載盤以公轉軸為中心而公轉。第一加熱器設置於承載台下。第一加熱器在公轉軸的徑向上具有第一寬度。第二加熱器設置於承載台下。第二加熱器與第一加熱器彼此分離開來。第二加熱器在公轉軸的徑向上具有一第二寬度,且第一寬度不等於第二寬度。The heating device of the present invention includes a carrier, a plurality of carrier plates, a first heater, and a second heater. The bearing table has a revolution axis. A plurality of carrier plates are arranged on the carrier table. The carrier table drives these carrier plates to revolve around the revolution axis. The first heater is arranged under the bearing platform. The first heater has a first width in the radial direction of the revolution axis. The second heater is arranged under the bearing platform. The second heater and the first heater are separated from each other. The second heater has a second width in the radial direction of the revolution axis, and the first width is not equal to the second width.
在本發明的一實施例中,上述的加熱裝置的載盤具有載盤直徑,且第一寬度與載盤直徑的比值大於0.5且小於1。In an embodiment of the present invention, the carrier disk of the above heating device has a carrier diameter, and the ratio of the first width to the carrier diameter is greater than 0.5 and less than 1.
在本發明的一實施例中,上述的加熱裝置的第一加熱器具有第一溫度,第二加熱器具有第二溫度,且第一溫度不等於第二溫度。In an embodiment of the present invention, the first heater of the above heating device has a first temperature, and the second heater has a second temperature, and the first temperature is not equal to the second temperature.
在本發明的一實施例中,上述的加熱裝置更包括第三加熱器,設置於承載台下。第三加熱器、第二加熱器與第一加熱器彼此分離開來。第三加熱器在公轉軸的徑向上具有第三寬度,且第三寬度不等於第一寬度與第二寬度。In an embodiment of the present invention, the above-mentioned heating device further includes a third heater, which is arranged under the carrying platform. The third heater, the second heater, and the first heater are separated from each other. The third heater has a third width in the radial direction of the revolution axis, and the third width is not equal to the first width and the second width.
在本發明的一實施例中,上述的加熱裝置的各載盤於承載台上的垂直投影部分重疊於第一加熱器在承載台上的垂直投影,且第一加熱器於載盤上的垂直投影面積與載盤的表面積的比值大於等於0.4且小於等於0.9。In an embodiment of the present invention, the vertical projection of each tray of the heating device on the carrier is partially overlapped with the vertical projection of the first heater on the carrier, and the vertical projection of the first heater on the carrier is The ratio of the projected area to the surface area of the carrier plate is greater than or equal to 0.4 and less than or equal to 0.9.
在本發明的一實施例中,上述的加熱裝置的各載盤的對稱中心重疊於第一加熱器在這些載盤上的垂直投影。In an embodiment of the present invention, the center of symmetry of each tray of the heating device described above overlaps the vertical projection of the first heater on these trays.
在本發明的一實施例中,上述的加熱裝置的多個載盤與承載台之間在公轉軸的軸向上分別具有間隙。In an embodiment of the present invention, there are gaps in the axial direction of the revolving shaft between the plurality of carrier plates and the carrier table of the above-mentioned heating device.
在本發明的一實施例中,上述的加熱裝置的多個載盤的第一載盤與承載台之間在公轉軸的軸向上具有第一間距,多個載盤的第二載盤與承載台之間在公轉軸的軸向上具有第二間距,且第一間距不等於第二間距。In an embodiment of the present invention, the first carrier of the plurality of carrier plates of the heating device and the carrier have a first distance in the axial direction of the revolution axis, and the second carrier of the plurality of carrier plates and the carrier There is a second distance between the stages in the axial direction of the revolution axis, and the first distance is not equal to the second distance.
本發明的化學氣相沉積系統,包括腔室、加熱裝置、旋轉驅動機構以及進氣單元。加熱裝置設置於腔室內,且包括承載台、複數個載盤、第一加熱器以及第二加熱器。承載台具有公轉軸。複數個載盤設置於承載台上。承載台帶動這些載盤以公轉軸為中心而公轉。第一加熱器設置於承載台下。第一加熱器在公轉軸的徑向上具有第一寬度。第二加熱器設置於承載台下。第二加熱器與第一加熱器彼此分離開來。第二加熱器在公轉軸的徑向上具有第二寬度,且第一寬度不等於第二寬度。旋轉驅動機構連接承載台並帶承載台旋轉。進氣單元設置於腔室內並位於承載台上方。The chemical vapor deposition system of the present invention includes a chamber, a heating device, a rotation driving mechanism and an air intake unit. The heating device is arranged in the chamber and includes a carrying platform, a plurality of trays, a first heater, and a second heater. The bearing table has a revolution axis. A plurality of carrier plates are arranged on the carrier table. The carrier table drives these carrier plates to revolve around the revolution axis. The first heater is arranged under the bearing platform. The first heater has a first width in the radial direction of the revolution axis. The second heater is arranged under the bearing platform. The second heater and the first heater are separated from each other. The second heater has a second width in the radial direction of the revolution axis, and the first width is not equal to the second width. The rotation driving mechanism is connected to the carrying table and rotates with the carrying table. The air intake unit is arranged in the chamber and above the carrying platform.
在本發明的一實施例中,上述的化學氣相沉積系統的載盤具有載盤直徑,且第一寬度與載盤直徑的比值大於0.5且小於1。In an embodiment of the present invention, the carrier plate of the above-mentioned chemical vapor deposition system has a carrier plate diameter, and the ratio of the first width to the carrier plate diameter is greater than 0.5 and less than 1.
在本發明的一實施例中,上述的化學氣相沉積系統的第一加熱器具有第一溫度,第二加熱器具有第二溫度,且第一溫度不等於第二溫度。In an embodiment of the present invention, the first heater of the aforementioned chemical vapor deposition system has a first temperature, and the second heater has a second temperature, and the first temperature is not equal to the second temperature.
在本發明的一實施例中,上述的化學氣相沉積系統的各載盤於承載台上的垂直投影部分重疊於第一加熱器在承載台上的垂直投影,且第一加熱器於載盤上的垂直投影面積與載盤的表面積的比值大於等於0.4且小於等於0.9。In an embodiment of the present invention, the vertical projection of each tray of the chemical vapor deposition system on the carrier is partially overlapped with the vertical projection of the first heater on the carrier, and the first heater is on the carrier. The ratio of the vertical projection area to the surface area of the carrier plate is greater than or equal to 0.4 and less than or equal to 0.9.
在本發明的一實施例中,上述的化學氣相沉積系統的各載盤的對稱中心重疊於第一加熱器在這些載盤上的垂直投影。In an embodiment of the present invention, the symmetry center of each carrier plate of the above-mentioned chemical vapor deposition system overlaps the vertical projection of the first heater on the carrier plate.
在本發明的一實施例中,上述的化學氣相沉積系統的多個載盤與承載台之間在公轉軸的軸向上分別具有間隙。In an embodiment of the present invention, there are gaps between the plurality of carrier plates and the carrier table of the above-mentioned chemical vapor deposition system in the axial direction of the revolution axis.
在本發明的一實施例中,上述的化學氣相沉積系統的多個載盤的第一載盤與承載台之間在公轉軸的軸向上具有第一間距,多個載盤的第二載盤與承載台之間在公轉軸的軸向上具有第二間距,且第一間距不等於第二間距。In an embodiment of the present invention, the first carrier of the plurality of carrier plates of the chemical vapor deposition system and the carrier have a first distance in the axial direction of the revolution axis, and the second carrier of the plurality of carrier plates There is a second distance between the disk and the carrying platform in the axial direction of the revolution axis, and the first distance is not equal to the second distance.
在本發明的一實施例中,上述的化學氣相沉積系統的加熱裝置更包括載盤驅動單元,配置於承載台上,且用以驅使載盤以自轉軸為中心而自轉。In an embodiment of the present invention, the heating device of the above-mentioned chemical vapor deposition system further includes a disc drive unit, which is disposed on the carrying table and used to drive the disc to rotate around the rotation axis.
在本發明的一實施例中,上述的化學氣相沉積系統的載盤驅動單元包括設置於承載台內的多條氣體管道,且這些氣體管道位於多個載盤下。In an embodiment of the present invention, the disk drive unit of the above-mentioned chemical vapor deposition system includes a plurality of gas pipes arranged in the carrying platform, and the gas pipes are located under the plurality of carrier plates.
基於上述,在本發明的一實施例的加熱裝置及化學氣相沉積系統中,透過彼此分離的第一加熱器與第二加熱器在公轉軸的徑向上的寬度不同,可有效提升磊晶基板的溫度均勻性,致使成長於磊晶基板上的薄膜可具有較佳的厚度均勻性,對於後續形成微型發光二極體晶粒的光電均勻性也會有改善。Based on the above, in the heating device and the chemical vapor deposition system of an embodiment of the present invention, the first heater and the second heater separated from each other have different widths in the radial direction of the revolution axis, which can effectively lift the epitaxial substrate. The uniformity of the temperature, resulting in the film grown on the epitaxial substrate can have better thickness uniformity, and the photoelectric uniformity of the subsequent formation of micro light emitting diode crystal grains will also be improved.
圖1是本發明的第一實施例的加熱裝置的部分分解示意圖。圖2是本發明的一實施例的化學氣相沉積系統的剖面示意圖。請參照圖1及圖2,化學氣相沉積系統1包括腔室50、加熱裝置100、進氣單元20以及旋轉驅動機構30。加熱裝置100包括承載台110、複數個載盤120以及加熱器130。載盤120配置用以將磊晶基板ES定位於承載台110上。載盤120與加熱器130分別設置於承載台110的相對兩側。具體而言,承載台110具有相對的第一表面110a與第二表面110b以及設置於第一表面110a的多個凹槽110g。這些載盤120分別設置於這些凹槽110g內,並凸出承載台110的第一表面110a。承載台110的第二表面110b朝向加熱器130。Fig. 1 is a partial exploded schematic view of the heating device of the first embodiment of the present invention. 2 is a schematic cross-sectional view of a chemical vapor deposition system according to an embodiment of the present invention. Please refer to FIGS. 1 and 2, the chemical
本實施例的載盤120數量是以四個為例進行示範性地說明,不代表本發明以圖式揭示內容為限制。在其他實施例中,載盤120的數量可根據實際的製程需求(例如磊晶基板或承載台的尺寸大小)而調整。加熱裝置100設置於腔室50內。旋轉驅動機構30與承載台110連動,以帶動承載台110旋轉。進氣單元20設置於腔室50上方。於本實施例中,進氣方向是由進氣單元20兩側流入腔室50,但不以此為限。在其他實施例中,也可同時於進氣單元20下方設置進氣口。當成膜時,加熱裝置100可將磊晶基板ES的表面溫度維持在一預定值,並以旋轉驅動機構30令承載台110維持一旋轉速度,同時透過進氣單元20將製程氣體70(例如被汽化的前驅物或其他反應氣體)輸送至腔室50內,並透過這些製程氣體70的化學反應在磊晶基板ES上形成所需的磊晶薄膜TF。在本實施例中,磊晶基板ES例如是矽晶圓、藍寶石(Sapphire)基板、碳化矽(SiC)基板、或其他合適的基板,磊晶薄膜TF例如是氮化鎵(GaN)薄膜,但不以此為限。The number of
進一步而言,承載台110還具有公轉軸RE,且這些載盤120在承載台110的帶動下各自以公轉軸RE為中心而公轉。在本實施例中,加熱器130的數量是以兩個為例進行示範性地說明,分別為第一加熱器131與第二加熱器132,且在公轉軸RE的徑向上,第一加熱器131位於第二加熱器132與公轉軸RE之間,但本發明不以此為限。在其他實施例中,第二加熱器也可位於第一加熱器與公轉軸RE之間。舉例而言,這些加熱器130於承載台110上的垂直投影可環繞公轉軸RE。然而,本發明不限於此,根據其他實施例,加熱器可具有多個彼此分離的段部,且這些段部分別設置在與這些載盤120的公轉路徑重疊的多個區段上。Furthermore, the carrying
另一方面,載盤120具有對稱中心CS,且對稱中心CS在承載台110的旋轉帶動下形成圍繞公轉軸RE的公轉軌跡TR。特別說明的是,在公轉軸RE的軸向上,此公轉軌跡TR重疊於第一加熱器131於承載台110上的垂直投影131P。也就是說,在載盤120公轉的過程中,其對稱中心CS始終重疊於第一加熱器131於載盤120上的垂直投影131P。在本實施例中,多個載盤120的公轉路徑大致上相互重疊(亦即,這些載盤120的對稱中心CS的公轉軌跡TR大致上相互重疊),但本發明不以此為限。在其他實施例中,多個載盤120的對稱中心CS的公轉軌跡TR也可彼此錯開。On the other hand, the
第一加熱器131在公轉軸RE的徑向上具有第一寬度W1,載盤120在公轉軸RE的徑向上具有載盤直徑D(亦即,此處公轉軸RE的徑向是通過載盤120的對稱中心CS)。特別一提的是,第一加熱器131的第一寬度W1與載盤120的載盤直徑D的比值大於0.5且小於1。據此,第一加熱器131可僅針對載盤120的局部區域進行加熱,有助於提升磊晶基板ES的溫度均勻性,致使成長於磊晶基板ES上的磊晶薄膜TF可具有較佳的厚度均勻性。在一些實施例中,第一加熱器131於載盤120上的垂直投影面積與載盤120的表面積的比值可大於等於0.4且小於等於0.9,有助於進一步提升磊晶基板ES的溫度均勻性。The
進一步而言,第二加熱器132在公轉軸RE的軸向上也是至少部分重疊於載盤120,而在公轉軸RE的徑向上具有第二寬度W2,且第二寬度W2不等於第一加熱器131的第一寬度W1。更具體地是,第二加熱器132的第二寬度W2小於第一加熱器131的第一寬度W1。在本實施例中,第一加熱器131具有第一溫度,第二加熱器132具有第二溫度,且透過第一溫度不等於第二溫度,可實現加熱器130對於載盤120的多區加熱,有助於提升磊晶基板ES的溫度均勻性,致使成長於磊晶基板ES上的磊晶薄膜TF可具有較佳的厚度均勻性。應可理解的是,在本實施例中,磊晶基板ES的加熱可透過熱輻射與熱傳導的方式來實現。更具體地說,加熱器130所提供的熱能可經由熱輻射的方式傳遞至承載台110的第二表面110b,再透過承載台110與載盤120的熱傳導而傳遞至磊晶基板ES,但本發明不以此為限。Furthermore, the
以下將列舉另一些實施例以詳細說明本揭露,其中相同的構件將標示相同的符號,並且省略相同技術內容的說明,省略部分請參考前述實施例,以下不再贅述。Other embodiments will be listed below to describe the disclosure in detail, wherein the same components will be marked with the same symbols, and the description of the same technical content will be omitted. For the omitted parts, please refer to the foregoing embodiments, and will not be repeated hereafter.
圖3是本發明的第二實施例的加熱裝置的剖面示意圖。請參照圖3,本實施例的加熱裝置100A與圖2的加熱裝置100的主要差異在於:加熱器的配置方式不同。具體而言,在公轉軸RE的徑向上,加熱器130A的第二加熱器132A位於第一加熱器131A與公轉軸RE之間。在本實施例中,第一加熱器131A與載盤120的配置關係與前述實施例的加熱裝置100相似,於此便不再重述。Fig. 3 is a schematic cross-sectional view of a heating device according to a second embodiment of the present invention. Please refer to FIG. 3, the main difference between the
特別一提的是,第一加熱器131A的第一寬度W1與載盤120的載盤直徑D的比值大於0.5且小於1。據此,第一加熱器131A可僅針對載盤120的局部區域進行加熱,有助於提升磊晶基板ES的溫度均勻性,致使成長於磊晶基板ES上的磊晶薄膜TF可具有較佳的厚度均勻性。另一方面,第二加熱器132A在公轉軸RE的徑向上具有第二寬度W2,且第二寬度W2不等於第一加熱器131A的第一寬度W1。更具體地是,第二加熱器132A的第二寬度W2小於第一加熱器131A的第一寬度W1。在本實施例中,第一加熱器131A具有第一溫度,第二加熱器132A具有第二溫度,且透過第一溫度不等於第二溫度,可實現加熱器130A對於載盤120的多區加熱,有助於提升磊晶基板ES的溫度均勻性,致使成長於磊晶基板ES上的磊晶薄膜TF可具有較佳的厚度均勻性。In particular, the ratio of the first width W1 of the
圖4是本發明的第三實施例的加熱裝置的剖面示意圖。請參照圖4,本實施例的加熱裝置100B與圖2的加熱裝置100的主要差異在於:加熱器的數量不同。在本實施例中,加熱裝置100B更包括第三加熱器133,且在公轉軸RE的徑向上,第三加熱器133位於第一加熱器131與公轉軸RE之間。第一加熱器131、第二加熱器132與第三加熱器133彼此分離開來,且在公轉軸RE的軸向上第三加熱器133不重疊於載盤120。據此,可提升加熱器130B對於磊晶基板ES在徑向上的溫度分布的調變能力。在本實施例中,第一加熱器131、第二加熱器132與載盤120的配置關係與前述實施例的加熱裝置100相似,於此便不再重述。Fig. 4 is a schematic cross-sectional view of a heating device according to a third embodiment of the present invention. Please refer to FIG. 4, the main difference between the
進一步而言,第三加熱器133在公轉軸RE的徑向上具有第三寬度W3,且第三加熱器133的第三寬度W3不等於第一加熱器131的第一寬度W1與第二加熱器132的第二寬度W2。在本實施例中,第三寬度W3可小於第一寬度W1且大於第二寬度W2,但本發明不以此為限。在其他實施例中,第三加熱器133的第三寬度W3也可等於第二加熱器132的第二寬度W2。另一方面,第一加熱器131、第二加熱器132與第三加熱器133可分別具有第一溫度、第二溫度與第三溫度,且透過第一溫度不等於第二溫度以及第三溫度不等於第一溫度與第二溫度,可實現加熱器130B對於載盤120的多區加熱,有助於提升磊晶基板ES的溫度均勻性,致使成長於磊晶基板ES上的磊晶薄膜TF可具有較佳的厚度均勻性。Furthermore, the
圖5是本發明的第四實施例的加熱裝置的剖面示意圖。請參照圖5,本實施例的加熱裝置100C與圖4的加熱裝置100B的主要差異在於:第三加熱器的配置方式不同。具體而言,加熱裝置100C的第三加熱器133B在公轉軸RE的軸向上可重疊於載盤120。據此,可進一步增加磊晶基板ES於周邊的溫度均勻性。特別說明的是,在本實施例中,第一加熱器131B、第二加熱器132B與載盤120的配置關係與前述實施例的加熱裝置100相似,於此便不再重述。Fig. 5 is a schematic cross-sectional view of a heating device according to a fourth embodiment of the present invention. Referring to FIG. 5, the main difference between the
進一步而言,第三加熱器133B在公轉軸RE的徑向上具有第三寬度W3’,且第三加熱器133B的第三寬度W3’不等於第一加熱器131B的第一寬度W1’與第二加熱器132B的第二寬度W2’。在本實施例中,第三寬度W3’可小於第一寬度W1’且大於第二寬度W2’,但本發明不以此為限。另一方面,第一加熱器131B、第二加熱器132B與第三加熱器133B可分別具有第一溫度、第二溫度與第三溫度,且透過第一溫度不等於第二溫度以及第三溫度不等於第一溫度與第二溫度,可實現加熱器130C對於載盤120的多區加熱,有助於提升磊晶基板ES的溫度均勻性,致使成長於磊晶基板ES上的磊晶薄膜TF可具有較佳的厚度均勻性。Furthermore, the
圖6是本發明的第五實施例的加熱裝置的部分分解示意圖。圖7是本發明的另一實施例的化學氣相沉積系統的剖面示意圖。特別說明的是,為清楚呈現起見,圖6省略了圖7的載盤驅動單元150的繪示。Fig. 6 is a partial exploded schematic view of the heating device of the fifth embodiment of the present invention. FIG. 7 is a schematic cross-sectional view of a chemical vapor deposition system according to another embodiment of the present invention. In particular, for the sake of clarity, FIG. 6 omits the illustration of the
請參照圖6及圖7,本實施例的化學氣相沉積系統2以及加熱裝置100D與圖2的化學氣相沉積系統1以及加熱裝置100的主要差異在於:加熱裝置100D更包括載盤驅動單元150,配置用以驅使載盤120以自轉軸RO為中心而自轉,其中自轉軸RO通過載盤120的對稱中心CS。在本實施例中,載盤驅動單元150包括設置於承載台110A內的多條氣體管道,例如氣體管道151與氣體管道152,且氣體管道位於載盤120下。這些氣體管道配置用以將氣流輸送至承載台110A的凹槽(例如凹槽110g-1與凹槽110g-2)內並流動於載盤120與承載台110A之間,使設置於凹槽內的載盤120與承載台110A在公轉軸RE的軸向上形成間隙115,並透過氣流的帶動使載盤120轉動。據此,可進一步提升磊晶基板ES內的溫度均勻性。需說明的是,在本實施例中,載盤120的公轉方向與自轉方向可選擇性地相同(例如是順時針方向),但本發明不以此為限。在其他實施例中,載盤120的公轉方向與自轉方向也可分別為順時針方向與逆時針方向。6 and 7, the main difference between the chemical vapor deposition system 2 and
在本實施例中,,載盤驅動單元150將第一氣流GS1輸送至設有載盤121的凹槽110g-1內,致使載盤121與承載台110A之間在公轉軸RE的軸向上具有第一間距G1。將第二氣流GS2輸送至設有載盤122的凹槽110g-2內,致使載盤122與承載台110A之間在公轉軸RE的軸向上具有第二間距G2。透過調節第一氣流GS1與第二氣流GS2的相對大小,使載盤121與承載台110A的第一間距G1不等於載盤122與承載台110A的第二間距G2。舉例來說,當磊晶基板ES1與磊晶基板ES2之間具有溫度差異時,透過第一氣流GS1的單位時間流量小於第二氣流GS2的單位時間流量,可使第一間距G1小於第二間距G2,以進一步縮減兩磊晶基板間的溫度差異。或也可以藉由不同的氣流來調整這些載盤的自轉速度以改善成膜均勻度並提高磊晶品質。In this embodiment, the disc
綜上所述,在本發明的一實施例的加熱裝置及化學氣相沉積系統中,透過彼此分離的第一加熱器與第二加熱器在公轉軸的徑向上的寬度不同,可有效提升磊晶基板的溫度均勻性,致使成長於磊晶基板上的薄膜可具有較佳的厚度均勻性,對於後續形成微型發光二極體晶粒的光電均勻性也會有改善。In summary, in the heating device and chemical vapor deposition system of an embodiment of the present invention, the first heater and the second heater separated from each other have different widths in the radial direction of the revolution axis, which can effectively improve the The temperature uniformity of the epitaxial substrate makes the film grown on the epitaxial substrate have better thickness uniformity, and the photoelectric uniformity of the subsequent formation of micro light emitting diode crystal grains will also be improved.
1、2:化學氣相沉積系統
20:進氣單元
30:旋轉驅動機構
50:腔室
70:製程氣體
100、100A、100B、100C、100D:加熱裝置
110、110A:承載台
110a:第一表面
110b:第二表面
110g、110g-1、110g-2:凹槽
115:間隙
120、121、122:載盤
130、130A、130B、130C、131、132、131A、132A、133、131B、132B、133B:加熱器
131P:垂直投影
150:載盤驅動單元
151、152:氣體管道
CS:對稱中心
D:載盤直徑
ES、ES1、ES2:磊晶基板
G1:第一間距
G2:第二間距
GS1:第一氣流
GS2:第二氣流
RE:公轉軸
RO:自轉軸
TF:磊晶薄膜
TR:公轉軌跡
W1、W1’:第一寬度
W2、W2’:第二寬度
W3、W3’:第三寬度1, 2: Chemical vapor deposition system
20: intake unit
30: Rotary drive mechanism
50: Chamber
70:
圖1是本發明的第一實施例的加熱裝置的部分分解示意圖。 圖2是本發明的一實施例的化學氣相沉積系統的剖面示意圖。 圖3是本發明的第二實施例的加熱裝置的剖面示意圖。 圖4是本發明的第三實施例的加熱裝置的剖面示意圖。 圖5是本發明的第四實施例的加熱裝置的剖面示意圖。 圖6是本發明的第五實施例的加熱裝置的部分分解示意圖。 圖7是本發明的另一實施例的化學氣相沉積系統的剖面示意圖。Fig. 1 is a partial exploded schematic view of the heating device of the first embodiment of the present invention. 2 is a schematic cross-sectional view of a chemical vapor deposition system according to an embodiment of the present invention. Fig. 3 is a schematic cross-sectional view of a heating device according to a second embodiment of the present invention. Fig. 4 is a schematic cross-sectional view of a heating device according to a third embodiment of the present invention. Fig. 5 is a schematic cross-sectional view of a heating device according to a fourth embodiment of the present invention. Fig. 6 is a partial exploded schematic view of the heating device of the fifth embodiment of the present invention. FIG. 7 is a schematic cross-sectional view of a chemical vapor deposition system according to another embodiment of the present invention.
100:加熱裝置100: heating device
110:承載台110: Carrier
120:載盤120: Disk
130、131、132:加熱器130, 131, 132: heater
131P:垂直投影131P: vertical projection
CS:對稱中心CS: Center of Symmetry
D:載盤直徑D: Diameter of carrier
ES:磊晶基板ES: Epitaxy substrate
RE:公轉軸RE: revolution axis
TR:公轉軌跡TR: revolution track
W1:第一寬度W1: first width
W2:第二寬度W2: second width
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