TW202118887A - Gap arrangement element - Google Patents

Abstract

The present invention relates to a gap arrangement element having a laminated structure, and provides a new gap arrangement element that is unlikely to cause delamination due to heating.

A gap arrangement element that is interposed between the target element and the base material along the gap between adjacent targets, when a plurality of target elements are arranged on the surface side of a base material (simply referred to as "base material") of a sputtering target, and it has a multi-layer structure in which three or more layers are laminated in the thickness direction, and has an intermediate layer provided between the layer on the target member side (also referred to as "front surface layer") and the layer on the base material side (also referred to as "back surface layer"), wherein the coefficient of linear expansion of the material constituting the intermediate layer is within a range between the coefficient of linear expansion of the material constituting the front surface layer and the coefficient of linear expansion of the material constituting the back surface layer.

Description

Gap configuration member

The present invention relates to a gap arranging member, which is located on the surface side of the substrate of the sputtering target (only referred to as "substrate"), and provides gaps between adjacent target members to arrange the division of a plurality of target members The target is arranged along a gap between adjacent target members, and is interposed between the target member and the substrate, so that the substrate can not be exposed to the surface side in the gap.

The so-called sputtering is a technique of thin film formation technology. An example of this can be: introducing an inert gas such as Ar into a vacuum, applying a negative voltage to the target member to generate a glow discharge, plasmaizing and ionizing the inert gas by the glow discharge to form gas ions, and then making the gas Ions collide with the surface of the target at high speed to eject the particles of the film-forming material constituting the target, and then attach and deposit the particles on the surface of the substrate forming the film, thereby forming a dense and strong thin film on the surface of the substrate.

According to this sputtering method, even materials that are difficult to form a film in vacuum evaporation methods such as high melting point metals, alloys, ceramics, etc. can be formed, and a thin film with a large area can be formed with high precision. Therefore, the sputtering method is often used in the manufacture of various electronic parts such as information equipment, AV equipment, and home appliances. Thin films such as ITO, IZO, and IGZO formed by sputtering are widely used as electrodes for display devices such as liquid crystal displays, touch panels, and EL displays.

In recent years, with the increase in the size of the display panel, it is gradually required to form a thin film with a large area, and the target member must also be enlarged. However, it is difficult to form a target member for sputtering by forming a single target member with a large area. Therefore, a method of dividing the target member into a plurality of target members and bonding the plurality of target members to a base material to form a large-area sputtering target is adopted (for example, refer to Patent Document 1).

In this way, considering the thermal expansion difference between the substrate and the target member, the target divided into a plurality of target members (also referred to as "divided target") is arranged on the substrate in such a way that a gap can be formed between adjacent target members. Above, the base material and each target member are generally joined by low-melting-point solder with good thermal conductivity, such as In-based or Sn-based metals.

In the split sputtering target to which a plurality of oxide semiconductor target members are joined in this way, since the target members are arranged with a gap between each other as described above, when the substrate is exposed in the gap, the substrate is exposed during sputtering. It is also sputtered, and there is a concern that it may be mixed in the formed oxide semiconductor film. Therefore, a method has been proposed in which a protective member (equivalent to the gap arranging member of the present invention) is provided in the gap between adjacent target members to prevent the substrate from being exposed (for example, refer to Patent Document 2).

[Prior Technical Literature]

[Patent Literature]

Patent Document 1: Japanese Patent Application Publication No. 2005-232580

Patent Document 2: International Publication No. 2012/063524 Handbook

Patent Document 2 discloses a double-layer structure as a protective member (equivalent to the present invention) that protects the substrate from being exposed in the gap between adjacent target members and prevents the surface of the substrate from being sputtered. Invention of the gap configuration member). That is, it discloses a protective member with a two-layer structure, which is composed of: a second protective member arranged on the side of the base material and formed of a metal foil made of metal or alloy such as Cu; and arranged on the upper side thereof, That is, the target member side is composed of a first protective member formed of one or more metals, alloys, or ceramic materials containing elements contained in the target member.

However, when the protective member (corresponding to the gap arranging member of the present invention) with such a two-layer structure is heated by sputtering or the like, there is a difference in the linear expansion coefficient of the materials constituting the second protective member and the first protective member. Interlayer peeling will occur.

Therefore, the present invention relates to a gap arranging member composed of a laminated structure. It improves the protective member disclosed in Patent Document 2 (equivalent to the gap arranging member of the present invention), and provides a method that is even by sputtering or the like. It is a novel gap disposition member that is not easy to produce delamination between layers when heated.

The present invention proposes a gap arranging member. When a plurality of target members are arranged on the surface side of the substrate of the sputtering target (only referred to as "substrate"), the target member is interposed along the gap between adjacent target members. Dispose the member in the gap between the substrate and the base material,

The aforementioned gap arranging member is formed in a multilayer structure in which three or more layers are laminated in the thickness direction. The layer on the target member side (also referred to as "surface layer") and the layer on the substrate side (also referred to as "inner layer") ) An intermediate layer is provided therebetween, and the linear expansion coefficient of the material constituting the intermediate layer is within a range between the linear expansion coefficient of the material constituting the surface layer and the linear expansion coefficient of the material constituting the inner surface layer.

The gap arranging member proposed by the present invention is formed into a multilayer structure composed of three or more layers, and the linear expansion coefficient of the material constituting the intermediate layer is determined by the linear expansion coefficient of the material constituting the surface layer and the inner surface. The linear expansion coefficients of the layer materials are adjusted in a manner within the range between the linear expansion coefficients, so the linear expansion coefficient difference between the layers becomes small, and it is not easy to produce interlayer peeling even by heating such as sputtering.

1: Gap configuration member

1A: Surface layer

1B: Middle layer

1C: inner surface layer

2: Substrate

3: target component

4: gap

5: Joining material

Fig. 1 is a schematic top perspective view showing an example of a segmented target.

Fig. 2 is a longitudinal sectional view showing a part of an example of a sputtering target in which a gap arrangement member of an example of the present invention is arranged.

Fig. 3 is a schematic cross-sectional view showing an example of a gap arranging member of the present invention.

Next, the present invention will be explained based on example embodiments. However, the present invention is not limited to the implementation types described below.

<This gap arrangement member>

The gap arranging member (referred to as "this gap arranging member") 1 of an example of the embodiment of the present invention is shown in FIGS. 1 and 2 and has the following structure, that is, on the surface side of the substrate, and Adjacent A gap 4 is provided between the target members 3, 3 to arrange a plurality of target members 3, and the gap 4 between the adjacent target members 3, 3 is located between the target member 3 and the substrate 2. In other words, it is arranged along the gap 4 between the adjacent target members 3 and 3, and the member is arranged in the gap between the target member 3 and the base material 2.

Since the gap arrangement member 1 can cover the surface of the substrate 2 along the gap 4 between the adjacent target members 3 and 3, it can prevent the surface of the substrate 2 from being sputtered in the gap 4 during sputtering. This effectively prevents the constituent materials of the base material 2 from being mixed into the film to be formed.

This gap arranging member 1 is shown in FIG. 3, and may have a multilayer structure in which three or more layers are laminated in the thickness direction. That is, between the layer on the target member side, that is, the surface layer 1A and the layer on the substrate 2 side, that is, the inner surface layer 1C, one or two or more intermediate layers 1B may be provided.

(Linear expansion rate)

The linear expansion coefficient of the material constituting the intermediate layer 1B is preferably within a range between the linear expansion coefficient of the material constituting the surface layer 1A and the linear expansion coefficient of the material constituting the inner surface layer 1C. In this case, the “range” also includes the case where the linear expansion coefficient of the material constituting the intermediate layer 1B is the same as the linear expansion coefficient of the material constituting the surface layer 1A, or the linear expansion coefficient of the material constituting the intermediate layer 1B and the inner surface When the linear expansion rate of the material of layer 1C is the same.

For example, the gap arrangement member 1 has a three-layer structure in which a first protective layer (surface layer 1A), a second protective layer (intermediate layer 1B), and a third protective layer (inner surface layer 1C) are sequentially laminated from the surface side. In this case, the linear expansion coefficient of the material constituting each layer is preferably the first protective layer≦the second protective layer≦the third protective layer, and particularly preferably the first protective layer<the second protective layer<the third protective layer.

In addition, in this gap arrangement member 1, a first protective layer (surface layer 1A), a second protective layer (intermediate layer 1B), a third protective layer (intermediate layer 1B), and a fourth protective layer (inner surface layer) are sequentially laminated 1C) while In the case of a four-layer structure, the linear expansion coefficient of the materials constituting each layer is preferably the first protective layer≦the second protective layer≦the third protective layer≦the fourth protective layer, and the first protective layer<the fourth protective layer is particularly preferred. 2 protective layer <3rd protective layer <4th protective layer.

The difference between the linear expansion coefficients of the materials constituting the intermediate layer 1B and the surface layer 1A and the materials constituting the intermediate layer 1B and the inner surface layer 1C is preferably 9.0×10 ^-6 /K or less, and more preferably 7.0×10 ^-6 /K or less, and more preferably 5.0×10 ^-6 /K or less.

In addition, from the viewpoint of better ensuring the bonding between the gap arranging member 1 and the base material 2, the difference between the linear expansion coefficients of the materials constituting the inner surface layer 1C of the gap arranging member 1 and the base material 2 is preferably 9.0×10 ^-6 /K or less, more preferably 7.0×10 ^-6 /K or less, among them, more preferably 5.0×10 ^-6 /K or less, and particularly preferably 3.0×10 ^-6 /K or less, Among them, it is more preferably 1.0×10 ^-6 /K or less, and particularly preferably the same.

(shape)

The shape of the gap arrangement member 1 in plan view includes, for example, a rectangular shape, a band shape, a cross band shape, and a lattice shape. However, it is not limited to the shape of the plan view.

(Layer thickness)

From the viewpoint of suppressing warpage caused by the difference in thermal expansion rate or warpage with respect to stress during the formation of the protective film, the thickness of the inner surface layer 1C is preferably the same as the thickness of the surface layer 1A. Or bigger.

At this time, the thickness difference between the inner surface layer 1C and the surface layer 1A is preferably 0 mm or more and 1.0 mm or less, more preferably 0.8 mm or less, and even more preferably 0.5 mm or less.

From the viewpoint of suppressing warpage caused by the difference in thermal expansion rate or warpage with respect to stress during the formation of the protective film, the thickness of the inner surface layer 1C is preferably the same as the thickness of the intermediate layer 1B. Or bigger.

At this time, the thickness difference between the inner surface layer 1C and the intermediate layer 1B is preferably 0 mm or more and 1.0 mm or less, more preferably 0.8 mm or less, and even more preferably 0.5 mm or less.

From the viewpoint of obtaining the effect of alleviating the difference in thermal expansion between the surface layer 1A and the inner surface layer 1C, the thickness of the intermediate layer 1B is preferably the same as or greater than the thickness of the surface layer 1A.

At this time, the thickness difference between the intermediate layer 1B and the surface layer 1A is preferably 0 mm or more and 0.5 mm or less, more preferably 0.3 mm or less, and even more preferably 0.1 mm or less.

Therefore, for example, in this gap arrangement member 1 is a three-layer structure in which a first protective layer (surface layer 1A), a second protective layer (intermediate layer 1B), and a third protective layer (inner surface layer 1C) are sequentially laminated In this case, the thickness of each layer is preferably at least the first protective layer≦the third protective layer, and more preferably the first protective layer<the third protective layer. In addition, it is preferable that the first protective layer≦the second protective layer≦the third protective layer, and among them, the first protective layer<the second protective layer<the third protective layer is more preferable.

In addition, in this gap arrangement member 1, a first protective layer (surface layer 1A), a second protective layer (intermediate layer 1B), a third protective layer (intermediate layer 1B), and a fourth protective layer (inner surface layer) are sequentially laminated In the case of the four-layer structure formed by 1C), the thickness of each layer is preferably at least the first protective layer≦the fourth protective layer, and more preferably the first protective layer<the fourth protective layer. In addition, the first protective layer≦the second protective layer≦the third protective layer≦the fourth protective layer is preferable, and the first protective layer<the second protective layer<the third protective layer<the fourth protective layer is more preferable.

In addition, at least between the sputtering of the target member 3, the surface layer 1A of the gap configuration member 1 must withstand the collision of gas ions, so the thickness of the aforementioned surface layer 1A is preferably 0.2% or more of the thickness of the target member 3. More preferably, it is 0.5% or more, and among them, it is still more preferably 1.0% or more. On the other hand, from the viewpoint of the thickness of the adhesive layer or the cooling efficiency, it is preferably 20% or less of the thickness of the target member 3, more preferably 10% or less, and still more preferably 5% or less.

The thickness of each layer itself is preferably set appropriately from the size of the target member 3 and the like.

As a standard, the thickness of the surface layer 1A can be, for example, 0.05 mm or more and 0.5 mm or less, among which it is 0.1 mm or more or 0.3 mm or less, and among them, it is 0.2 mm or less.

The thickness of the inner surface layer 1C includes, for example, 0.2 mm or more and 1.0 mm or less, among which it is 0.8 mm or less, and among them, it is 0.5 mm or less.

The thickness of the intermediate layer 1B includes, for example, 0.05 mm or more and 0.5 mm or less, and among them, it is 0.1 mm or more or 0.3 mm or less, and among them, it is 0.2 mm or less.

In addition, the standard for the thickness of the entire gap arranging member 1 includes 0.3 mm or more and 2 mm or less, among which it is 0.4 mm or more or 1.5 mm or less, and among them, it is 1.0 mm or less.

(material)

The surface layer 1A of the gap arranging member 1 is preferably composed of a material that does not have an adverse effect even when it is mixed into a thin film to be formed, or a material that can suppress the sputtering phenomenon.

A material that does not cause adverse effects even if it is mixed into the thin film to be formed, for example, all or part of the elements constituting the composition of the target member 3, or alloys or oxides containing these elements can be used.

On the other hand, as a material capable of suppressing the sputtering phenomenon, for example, a material having a larger volume resistance than the target member 3, that is, a high-resistance material, can be used as the material of the gap arrangement member. In such a high-resistance material When used as a material for the gap arrangement member, the volume resistivity (Ω·cm) of the high-resistance material preferably has a value 10 times or more of the volume resistivity of the target member 3.

More specifically, the aforementioned surface layer 1A is preferably formed of a metal material, or a ceramic material, or a polymer material, or a composite material of two or more of these constituting the target member 3.

At this time, the ceramic material is preferably the same composition as the target member 3, or a ceramic material composed of a part of the same material as the target member 3, or a ceramic material with high resistance such as _{ZrO 2} , Al ₂ O _{3, etc.} material. If it is a ceramic material with high electrical resistance, the plasma can be prevented from entering the divided part during sputtering, and the sputtering of Zr or Al can be effectively prevented.

The material constituting the inner surface layer 1C of the gap arranging member 1 is preferably a material that has a small linear expansion coefficient difference with the base material 2 and does not react with the joining material (for example, In solder).

From this point of view, the aforementioned inner surface layer 1C is preferably formed of a metal material, a ceramic material, or a composite material thereof.

The intermediate layer 1B of the gap arranging member 1 may be a material that can be laminated with the surface layer 1A and the inner surface layer 1C, and the linear expansion coefficient can be adjusted to the above-mentioned range.

Therefore, the aforementioned intermediate layer 1B is preferably formed of a metal material, a ceramic material, or a composite material thereof.

Here, for example, when the target member 3 is IGZO (In-Ga-Zn-O), the metal material constituting the aforementioned target member 3 is any one or more of In, Zn, and Ga, and the target member 3 is IZO ( In-Zn-O), it is a metallic material of In or Zn.

Examples of the aforementioned ceramic materials include materials composed of oxides or nitrides containing any one or more of In, Zn, Al, Ga, Zr, Ti, Sn, and Mg. Specifically, for example, In ₂ O ₃ , ZnO, Al ₂ O ₃ , ZrO ₂ , TiO ₂ , IZO, IGZO, etc., or ZrN, TiN, AlN, GaN, ZnN, InN, etc. can be cited.

Examples of the aforementioned polymer materials include synthetic resin materials such as phenol resin, melamine resin, epoxy resin, urea resin, vinyl chloride resin, polyethylene, and polypropylene; or polyethylene, polyvinyl chloride, polypropylene, and polystyrene. General-purpose plastic materials such as ethylene; semi-general-purpose plastic materials such as polyvinyl acetate, ABS resin, AS resin, and acrylic resin. Furthermore, it can also be used: polyacetal, polycarbonate, modified polyphenylene ether (PPE: Polyphenylene Ether), polybutylene terephthalate and other engineering plastics, or polyarylate, polycarbonate, polyphenylene Super engineering plastics such as sulfide, polyether ether ketone, polyimide resin, and fluororesin. In particular, polyimide resins and the like also have tape-shaped materials, which have high heat resistance and insulation properties, and are therefore preferred.

Since such a polymer material is a high-resistance substance, it can suppress the sputtering phenomenon in the gap 4 of the target members 3 and 3 during sputtering, and prevent adverse effects on the formed thin film.

For example, when the gap arrangement member 1 has a three-layer structure in which the first protective layer (surface layer 1A), the second protective layer (intermediate layer 1B), and the third protective layer (inner surface layer 1C) are sequentially laminated Preferably, the surface layer 1A is formed of more than one single metal or alloy or ceramic material containing the elements contained in the target member 3, the intermediate layer 1B is formed of a metal material or a ceramic material, and the inner surface layer 1C is also formed of a metal material Or it is formed of a ceramic material and adjusted so that the linear expansion coefficient of the material constituting each layer falls within the above-mentioned range.

(Manufacturing method of this gap arrangement member)

An example of the manufacturing method of this gap arranging member 1 can be listed as follows: firstly forming or preparing a tape or sheet made of a material forming the inner surface layer 1C, that is, a metal material, a ceramic material, or a composite material thereof , Film or foil, and then use the material that forms the intermediate layer 1B, using steam Commonly known film forming methods such as plating method, plating method, sputtering method, plasma spraying method, coating method, etc. The intermediate layer 1B is formed on the surface of the inner surface layer 1C, and then formed in the same manner as the intermediate layer 1B Surface layer 1A. However, it is not limited to these manufacturing methods.

<Target member>

The target member 3 to which the gap arranging member 1 is applied is preferably arranged with a gap 4 between adjacent target members 3 and 3.

At this time, the gap 4 is usually about 0.2 mm to 0.5 mm.

The target member 3 preferably has a plate shape or a cylindrical shape with a square surface. However, it is not limited to these shapes.

The material of the target member 3 is not particularly limited. Examples include: oxides composed of oxides containing at least one of Cu, Al, In, Sn, Ti, Ba, Ca, Zn, Mg, Ge, Y, La, Al, Si, Ga, and W Targets for semiconductors. Or a transparent electrode target (ITO etc.) or a metal target such as Al.

Examples of the foregoing oxide semiconductor targets include In-Ti-O, In-Ga-Zn-O, Ga-Zn-O, In-Zn-O, In-WO, In-Zn-WO, and Zn-O , Sn-Ba-O, Sn-Zn-O, Sn-Ti-O, Sn-Ca-O, Sn-Mg-O, Zn-Mg-O, Zn-Ge-O, Zn-Ca-O, Zn -Sn-Ge-O, Cu ₂ O, CuAlO ₂ , CuGaO ₂ , CuInO ₂ and so on.

The thickness of the target member 3 is not particularly limited, but is usually 3 mm to 20 mm.

〈Substrate〉

The substrate 2 is in the shape of a plate or a cylinder, and the material can be a single metal such as Ti, SUS, or Cu, or an alloy of these. But it is not limited to these.

In addition, the thickness of the base material 2 is not particularly limited.

In the case where the target member 3 and the base material 2 are in the shape of a plate, usually a plurality of target members 3 are arranged on the plate-shaped base material 2 at intervals in the front, back, left, and right, and the target members 3 are joined by bonding materials. And substrate 2.

In addition, when the target member 3 and the base material 2 are cylindrical, usually a plurality of target members 3 are arranged at appropriate intervals in the direction of the cylindrical axis of the cylindrical base material 2, and the bonding material To join the target member 3 and the base material 2.

〈Joining material〉

The base material 2 and the target member 3 and the base material 2 and the gap arrangement member 1 can be joined to each other by the joining material 5.

The bonding material 5 is not particularly limited as long as it can be used for bonding the target member 3 and the base material 2 of this type. For example, solder metals or solder alloys such as In metal, In-Sn metal, or In alloy metal with a trace metal component added to In.

<Manufacturing of Sputtering Target>

First, a plurality of the gap arranging members 1 are arranged on the surface of the base material 2 at predetermined intervals.

Next, on the surface side of this gap arranging member 1, gaps 4 are provided between adjacent target members 3 and 3 to arrange a plurality of target members 3. At this time, the gap arrangement member 1 is arranged so as to be interposed between the target member 3 and the base material 2 along the gap 4. Then, solder is used to join the gap arranging member 1, the base material 2, and the target member 3 together.

But it is not limited to this method.

<Explanation of sentence>

In the case of "X to Y" in this manual, it means "more than X and less than Y" unless otherwise specified, and also includes the meaning of "preferably greater than X" or "preferably less than Y" .

In addition, when it is expressed as "Above X" (X is any number) or "Below Y" (Y is any number), it also includes the meaning of "preferably greater than X" or "preferably less than Y" .

In addition, when it is expressed as "X≦" (X is any number) or "Y≧" (Y is any number), it also includes the meaning of "preferably X<" or "preferably Y>".

[Example]

Hereinafter, the present invention will be explained based on the examples. However, the present invention is not limited to the embodiment described here.

<Example 1>

First prepare a copper plate (inner surface layer) with a thickness of 0.3mm and a length of 200mm×20mm that is rectangular when viewed from above. ZrO _{2 is} sprayed on the surface of the copper plate to form an intermediate layer, and then Al ₂ O is sprayed. ₃ To form a surface layer, a gap arrangement member (sample) with a three-layer structure consisting of surface layer (thickness 100 μm)/intermediate layer (thickness 100 μm)/inner surface layer (thickness 0.3 mm) was produced.

The linear expansion coefficient of copper (Cu) constituting the inner surface layer is 17×10 ^-6 /K, the linear expansion coefficient _{of ZrO 2} constituting the intermediate layer ^{is 11×10 -6} /K, and _{the linear expansion coefficient of Al 2} O ₃ constituting the surface layer is The linear expansion ratio is 7×10 ^-6 /K.

<Example 2>

In Example 1, except that Y ₂ O _{3 was} sprayed instead of Al ₂ O ₃ to form the surface layer, the other was the same as that of Example 1. The surface layer (thickness 100 μm)/intermediate layer (thickness 100 μm)/inner surface Gap arrangement member (sample) of 3-layer structure composed of layers (thickness 0.3mm).

The coefficient of linear expansion _{of Y 2} O ₃ constituting the surface layer ^{is 7×10 -6} /K.

<Example 3>

In Example 1, except that MgO was sprayed to replace ZrO ₂ to form the intermediate layer, and ZrO _{2 was} sprayed to replace Al ₂ O ₃ to form the surface layer, the other was the same as that of Example 1 to produce a surface layer (thickness 100 μm) /Intermediate layer (thickness 100μm)/inner surface layer (thickness 0.3mm) three-layer structure of gap arrangement member (sample)

The linear expansion ratio of MgO constituting the intermediate layer is 13×10 ^-6 /K.

<Example 4>

In Example 2, except that nickel (Ni) was used instead of copper (Cu) constituting the inner surface layer, the other was the same as in Example 2, and the surface layer (thickness 100μm)/intermediate layer (thickness 100μm)/inner Gap arrangement member (sample) of 3-layer structure composed of surface layer (thickness 0.3mm).

The coefficient of linear expansion of Ni constituting the inner surface layer is 13×10 ^-6 /K.

<Example 5>

In Example 3, except that nickel (Ni) was used instead of copper (Cu) constituting the inner surface layer, the other parts were the same as in Example 3, and the surface layer (thickness 100μm)/intermediate layer (thickness 100μm)/inner Gap arrangement member (sample) of 3-layer structure composed of surface layer (thickness 0.3mm).

The coefficient of linear expansion of Ni constituting the inner surface layer is 13×10 ^-6 /K.

<Example 6>

First, prepare a rectangular titanium plate (inner surface layer) with a thickness of 0.3 mm and a length of 200 mm x 20 mm when viewed from above. Al ₂ O _{3 is} sprayed on the surface of the titanium plate to form an intermediate layer. Then Spraying mullite (Mullite) to form a surface layer, and fabricating a gap arrangement member (sample) with a three-layer structure consisting of surface layer (thickness 100μm)/intermediate layer (thickness 100μm)/inner surface layer (thickness 0.3mm) ).

The linear expansion coefficient of titanium (Ti) constituting the inner surface layer is 9×10 ^-6 /K, the linear expansion coefficient _{of Al 2} O ₃ constituting the intermediate layer ^{is 7×10 -6} /K, and the aluminum-rich red constituting the surface layer The linear expansion rate of pillar (3Al ₂ O ₃ ‧2SiO ₂ ^{) is 5×10 -6} /K.

<Comparative Example 1>

In Example 1, except that the intermediate layer was not formed, the gap arrangement member (sample) with a two-layer structure consisting of a surface layer (thickness 100 μm)/inner surface layer (thickness 0.3 mm) was produced in the same manner as in Example 1 except that the intermediate layer was not formed. ).

<Peeling evaluation test>

According to JIS Z 0237:2009, the gap arranging members (samples) obtained in the examples and comparative examples were heated using an electric furnace until the temperature of the article reached 200°C, then cooled to 25°C, and the following peeling test was performed.

The peeling test is to install the gap arranging member (sample) on the jig, and stick the adhesive tape (Cellotape (registered trademark) CT-18 made by Nichiban Co., Ltd.) on the surface at an angle of 90° and 300mm/min The adhesive tape was peeled off at a speed of, and the state after peeling was evaluated by the following criteria.

A (very good): The peeling area is 0%.

B (good): The peeling area is less than 10%.

C (poor): The peeling area is 10% or more.

[Table 1]

From the above-mentioned examples and comparative examples and the results of most experiments conducted by the present inventors so far, it can be known that by making the linear expansion coefficient of the material constituting the intermediate layer the linear expansion coefficient of the material constituting the surface layer and Adjusting in a manner within the range between the linear expansion coefficients of the materials constituting the inner surface layer can reduce the linear expansion coefficient difference between the layers and prevent interlayer peeling caused by heating.

In paragraphs [0039] to [0044] of Patent Document 2 (WO2012/063524), it is confirmed that the protective member (equivalent to the gap arrangement member of the present invention) is interposed between the target member (size 210mm×355mm, thickness 6mm, wire Between the expansion rate of 5×10 ^-6 /K) and the substrate (thickness 30mm, linear expansion rate of 17×10 ^-6 /K), the gap between adjacent target members can prevent the substrate from being sputtered. Since the present invention improves the protection member disclosed in Patent Document 2 (WO2012/063524), the test contents and test results described in paragraphs [0039] to [0044] of Patent Document 2 (WO2012/063524) are used as The reference test is cited in the specification of this application.

1: Gap configuration member

1A: Surface layer

1B: Middle layer

1C: inner surface layer

Claims (8)

A gap arranging member is a gap arranging member between the target member and the substrate along the gap between adjacent target members when a plurality of target members are arranged on the surface side of the substrate of a sputtering target, The aforementioned gap arranging member is formed in a multi-layer structure formed by stacking three or more layers in the thickness direction. An intermediate layer is provided between the surface layer of the layer belonging to the target member side and the inner surface layer of the layer belonging to the substrate side to form the aforementioned intermediate layer. The linear expansion coefficient of the material of the layer is in the range between the linear expansion coefficient of the material constituting the surface layer and the linear expansion coefficient of the material constituting the inner surface layer. The gap arrangement member according to claim 1, wherein the surface layer belonging to the first protective layer, the intermediate layer belonging to the second protective layer, and the inner surface layer belonging to the third protective layer are sequentially laminated from the target member toward the substrate side. As a result, the linear expansion ratio of the material constituting each layer is the first protective layer≦the second protective layer≦the third protective layer. The gap arrangement member according to claim 1, wherein the surface layer belonging to the first protective layer, the intermediate layer belonging to the second protective layer, and the inner surface layer belonging to the third protective layer are sequentially laminated from the target member toward the substrate side. As a result, the linear expansion ratio of the materials constituting each layer is the first protective layer<the second protective layer<the third protective layer. The gap arranging member according to any one of claims 1 to 3, wherein the thickness of the inner surface layer is the same as or greater than the thickness of the surface layer. The gap arrangement member according to any one of claims 1 to 4, wherein the surface layer belonging to the first protective layer, the intermediate layer belonging to the second protective layer, and the third protective layer are sequentially laminated from the target member toward the substrate side The inner surface of the layer is formed, and the thickness of each layer is the first protective layer≦the second protective layer≦the third protective layer. The gap arranging member according to any one of claims 1 to 5, wherein the thickness of the aforementioned surface layer is 0.2 to 20% of the thickness of the target member. The gap arranging member according to any one of claims 1 to 6, wherein the surface layer is made of a metal material, or a ceramic material, or a polymer material, or two or more of these composite materials constituting the target member constitute; The aforementioned inner surface layer is composed of metallic materials, ceramic materials, or composite materials thereof; The aforementioned intermediate layer is composed of a metal material, or a ceramic material, or a polymer material, or a composite material of two or more of these. A sputtering target including a substrate, a plurality of target members arranged on the surface side of the substrate, and the gap arrangement member according to any one of claims 1 to 7.

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