TW202109714A - 平台裝置及處理裝置 - Google Patents
平台裝置及處理裝置 Download PDFInfo
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Abstract
[課題]提供一種可使基板在冷卻成極低溫的狀態下旋轉且能小型化而維護性良好之平台裝置及使用其之處理裝置。
[解決手段]一種平台裝置,係在處理基板之處理裝置中,保持基板,該平台裝置,其特徵係,具有:平台,在處理容器內保持基板;平台旋轉機構,具有旋轉軸及馬達,該旋轉軸,係以延伸於下方的方式,被設置於平台之下面中心,該馬達,係經由旋轉軸,使平台旋轉;及冷凍傳熱機構,被固定配置於平台之下方之旋轉軸的外側位置,具有傳遞冷凍機之冷熱的冷凍傳熱體,並經由間隙被設置於與平台之間。
Description
本揭示,係關於平台裝置及處理裝置。
作為半導體基板等的基板之處理裝置例如成膜裝置,存在有需要極低溫的處理。例如,已知如下述技術:為了獲得具有高磁電阻比率之磁電阻元件,而在超高真空且極低溫的環境下形成磁性膜。
作為用以在超高真空環境下,將基板冷卻成極低溫且均勻的技術,已知如下述者:將載置基板之平台設置成可旋轉,在對於平台背面具有間隙的狀態下,將冷凍傳熱體配置於平台之背面側的中央(例如專利文獻1)。該技術,係一面將冷卻氣體供給至旋轉之平台與冷凍傳熱體的間隙,一面將冷凍機之冷熱經由冷凍傳熱體供給至平台,藉此,將基板均勻地冷卻成極低溫。
[先前技術文獻]
[專利文獻]
[專利文獻1]日本特開2019-016771號公報
[本發明所欲解決之課題]
本揭示,係提供一種可使基板在冷卻成極低溫的狀態下旋轉且能小型化而維護性良好之平台裝置及使用其之處理裝置。
[用以解決課題之手段]
本揭示之一態樣的平台裝置,係在處理基板之處理裝置中,保持基板,該平台裝置,其特徵係,具有:平台,在處理容器內保持基板;平台旋轉機構,具有旋轉軸及馬達,該旋轉軸,係以延伸於下方的方式,被設置於前述平台之下面中心,該馬達,係經由前述旋轉軸,使前述平台旋轉;及冷凍傳熱機構,被固定配置於前述平台之下方之前述旋轉軸的外側位置,具有傳遞冷凍機之冷熱的冷凍傳熱體,並經由間隙被設置於與前述平台之間。
[發明之效果]
根據本揭示,提供一種可使基板在冷卻成極低溫的狀態下旋轉且能小型化而維護性良好之平台裝置及使用其之處理裝置。
以下,參閱附加圖面,具體地說明關於實施形態。
<第1實施形態>
首先,說明關於第1實施形態。
[處理裝置]
一開始,說明關於具備了第1實施形態之平台裝置的處理裝置之一例。圖1,係表示像這樣的處理裝置之一例的概略剖面圖,圖2,係表示第1實施形態之平台裝置之一例的平面圖。
如圖1所示般,處理裝置1,係具備有:處理容器10,可保持為真空;靶材30;及平台裝置50。處理裝置1,係被構成為成膜裝置,該成膜裝置,係可在處理容器10內,於超高真空且極低溫的環境下,在被處理基板即半導體晶圓(以下,僅記載為「晶圓」)W對磁性膜進行濺鍍成膜。磁性膜,係例如被使用於穿隧磁阻(Tunneling Magneto Resistance;TMR)元件。
處理容器10,係用以處理作為基板之晶圓W的處理容器。在處理容器10,係連接有可減壓成超高真空之真空泵等的排氣手段(未圖示),且被構成為可將其內部減壓成超高真空(例如10-5
Pa以下)。在處理容器10,係從外部連接有氣體供給管(未圖示),從氣體供給管供給濺鍍成膜所需之濺鍍氣體(例如氬(Ar)氣體、氪(Kr)氣體、氖(Ne)氣體等的稀有氣體或氮氣)。又,在處理容器10之側壁,係形成有晶圓W的搬入搬出口(未圖示),搬入搬出口,係可藉由閘閥(未圖示)來進行開關。
靶材30,係以與平台裝置50所保持之晶圓W之上方對向的方式,被設置於處理容器10內的上部。交流電壓或直流電壓從電漿產生用電源(未圖示)被施加至靶材30。當在濺鍍氣體被導入至處理容器10內的狀態下,交流電壓或直流電壓從電漿產生用電源被施加至靶材30時,則濺鍍氣體之電漿會產生於處理容器10內,靶材30被電漿中之離子濺鍍。經濺鍍之靶材料的原子或分子,係沈積於平台裝置50所保持之晶圓W的表面。靶材30之數量並不特別限定,從可由1個處理裝置1對不同材料進行成膜這樣的觀點來看,複數個為較佳。例如,在沈積磁性膜(包含有Ni,Fe,Co等的強磁性體之膜)的情況下,作為靶材30之材料,係例如可使用CoFe、FeNi、NiFeCo。又,作為靶材30之材料,係亦可利用使該些材料含有另一元素者。
[平台裝置]
其次,詳細地說明平台裝置50。
平台裝置50,係一面將晶圓W保持於平台52,並使晶圓W與平台52一起旋轉,一面經由平台52將晶圓W冷卻成極低溫者。
如圖1所示般,平台裝置50,係具有:平台52;平台旋轉機構54;平台升降機構56;冷凍傳熱機構58;及冷凍機60。
平台52,係具有:靜電卡盤61,具有呈圓板狀之本體部,並被設置於本體部的上部;及第1傳熱部64,被設置於本體部的下面。平台52之本體部及第1傳熱部64,係例如藉由純銅(Cu)等的熱傳導性高之材料所形成。靜電卡盤61,係由介電質膜所構成,在其中埋設有卡盤電極62。卡盤電極62,係經由配線被連接於直流電源(未圖示),藉由將直流電壓施加至卡盤電極62的方式,靜電吸附晶圓W。又,在平台52,係埋設有加熱器63。加熱器63,係經由配線被連接於加熱器電源(未圖示),可藉由供電至加熱器63的方式,對平台52進行加熱。在第1傳熱部64之上面,係相對於平台52的中心呈同心狀地形成凸部64a。第1傳熱部64,係在最外周具有圓筒部64b。又,在平台52,係設置有測定平台52之溫度的溫度感測器(未圖示)。
平台旋轉機構54,係用以使平台52旋轉者,具有:旋轉軸70,從平台52之下面中心往下方延伸;及馬達71,經由旋轉軸70,使平台52旋轉。旋轉軸70,係經由絕緣構件72被連接於突出部64c,該突出部64c,係在第1傳熱部64之下面的中心,突出於下方。馬達71,係例如被構成為不使用減速機構等而直接驅動旋轉軸70的直接驅動馬達。在馬達71之上下,係設置有用於旋轉軸70的軸承73。馬達71或軸承73等的驅動部,係被收容於殼體74。
在旋轉軸70之內部,係設置有用以將傳熱氣體供給至晶圓W背面的傳熱氣體流路75。傳熱氣體流路75,係經由絕緣構件75及平台52到達平台52的表面。傳熱氣體,係從氣體供給源(未圖示)通過傳熱氣體流路75被供給至晶圓W的背面。作為傳熱氣體,係使用具有高熱傳導性的He氣體為較佳。又,在旋轉軸70之內部,係設置有卡盤電極62及加熱器的配線。
平台升降機構56,係可經由板體91,使平台52在「將晶圓W載置於平台52時的搬送位置與對被載置於平台52之晶圓W進行成膜時的處理位置」之間移動。搬送位置,係被設定於比處理位置低的位置。又,藉由平台升降機構56,可控制靶材30與晶圓W之間的距離。
冷凍傳熱機構58,係用以將來自冷凍機60的冷熱傳遞至平台52者,且經由間隙被設置於與平台52之間。冷凍傳熱機構58,係具有:冷凍傳熱體65;及第2傳熱部(平台側傳熱部)66。冷凍傳熱體65,係如圖2所示般,呈圓柱狀,以朝平台52之下方的旋轉軸70之外側位置偏心的狀態被固定配置。第2傳熱部66,係被連接於冷凍傳熱體65上,且為用以將到達了冷凍傳熱體65之冷熱經由被供給於間隙的冷卻氣體傳遞至平台52者。冷凍傳熱體65及第2傳熱部66,係為了効率良好地傳遞冷凍機60之冷熱,例如藉由純銅(Cu)等的熱傳導性高之材料所形成。
冷凍機60,係被安裝於底板92,並保持冷凍傳熱體65,冷卻冷凍傳熱體65。藉由冷凍機60,冷凍傳熱機構58之上面(亦即第2傳熱部66之上面)被冷卻成極低溫(例如-20℃以下)。冷凍機60,係在上部具有冷頭部,冷熱從冷頭部被傳遞至冷凍傳熱體65。從冷卻能力之觀點來看,冷凍機60,係利用了GM(Gifford-McMahon)循環的類型為較佳。在形成TMR元件所使用的磁性膜之際,冷凍機60所致之經由冷凍傳熱機構58之平台52的冷卻溫度,係-23~ -223℃(250~50K)的範圍為較佳。
另外,可藉由以逆循環使冷凍機60之冷凍循環驅動的方式,設成為加熱模式。在維護等之際,可藉由將冷凍機60設成為加熱模式的方式,經由冷凍傳熱機構58對平台52進行加熱而恢復至常溫。此時,藉由加熱器63對平台52進行加熱,藉此,可更迅速地使平台52恢復至常溫。
在冷凍傳熱體65之外周,係設置有隔熱構造體59。隔熱構造體59,係例如呈內部為真空的真空隔熱構造(真空雙重管構造)。可藉由隔熱構造體59,抑制冷凍傳熱體65之冷卻性能的下降。
冷凍傳熱機構58之第2傳熱部66,係對應於平台52(第1傳熱部64)而設置,且呈大致圓環狀,在中央具有旋轉軸70所插通的穴66a。第2傳熱部66,係具有與第1傳熱部64幾乎對應的大小,且被構成為稍微小於第1傳熱部64。在第2傳熱部66之上面,係形成有與第1傳熱部64之凹凸對應的凹凸,兩者,係以具有間隙的狀態被配置。亦即,在第2傳熱部66,係形成有與第1傳熱部64之同心狀的凸部64a對應之同心狀的凹部66b,凸部64a與凹部66b,係例如構成具有2mm以下之間隙G地被嵌合且呈梳齒狀的熱交換部。
在冷凍傳熱體65,係形成有可使冷卻氣體流通於其內部之中央的冷卻氣體供給路徑76,冷卻氣體供給路徑76,係貫通第2傳熱部66且延伸。而且,從氣體供給源(未圖示)所供給之冷卻氣體,係經由冷卻氣體供給路徑76被供給至間隙G,冷凍機60的冷熱經由冷凍傳熱機構58及冷卻氣體被傳遞至平台52,且平台52被冷卻成極低溫。如此一來,由於平台52經由冷卻氣體被冷卻,因此,可進行平台52之旋轉。
此時,由於熱交換部為梳齒狀且間隙G彎曲,因此,可提高第1傳熱部64與第2傳熱部66之間的冷卻氣體之熱傳遞效率。凸部64a及凹部66b之形狀及數量,係被適當地設定為可進行適當的熱交換。凹部66b之高度,係與凸部64a的高度相同即可,例如可設成為40~50mm。凹部66b之寬度,係可設成為比凸部64a之寬度稍微寬的寬度,例如可設成為7~9mm。
凸部64a與凹部66b,係可設成為呈波狀的形狀。又,凸部64a及凹部66b之表面,係亦可藉由噴砂等來施予凹凸加工。藉由該些,可增大熱傳遞用之表面積,且更提高熱傳遞效率。
另外,作為可旋轉地冷卻平台52之手段,係除了如以上般地使用冷卻氣體以外,亦可使用如防凍液般的液體冷媒,又亦可將熱傳導性良好的導熱膏填充至間隙G。
冷凍傳熱機構58之冷凍傳熱體65與第2傳熱部66,係亦可一體成形,且亦可由不同個體成形而被接合。
冷凍傳熱機構58,係被支撐於固定框架80。又,在第1傳熱部64之圓筒部64b的外側下端部,係安裝有往下方延伸且呈圓筒狀的蓋構件77,蓋構件77亦可隨著平台52之旋轉而旋轉。蓋構件77,係被設置為覆蓋第2傳熱部66及冷凍傳熱體65的上部。
固定框架80,係具有與蓋構件77之內側對向的圓筒部80a,在可旋轉之蓋構件77與固定框架80的圓筒部80a之間,係設置有磁性流體密封81。又,在磁性流體密封81附近,係設置有對磁性流體密封81進行加熱的加熱器82a、82b。又,在旋轉軸70與固定框架80之間亦設置有磁性流體密封83,在磁性流體密封83附近,係設置有對磁性流體密封83進行加熱的加熱器84。可藉由磁性流體密封81,83,在氣密地密封了蓋構件77與固定框架80之間及旋轉軸70與固定框架80之間的狀態下,經由旋轉軸70使平台52旋轉。又,可藉由加熱器82a,82b,84,對磁性流體密封81,83進行加熱,並可抑制因磁性流體的溫度下降所造成之密封性能下降或產生結露的情形。
在第2傳熱部66與第1傳熱部64的突出部64c之間及第2傳熱部66與第1傳熱部64的圓筒部64b之間,係分別設置有密封構件85及86。藉由密封構件85,86,防止來自間隙G之冷卻氣體的洩漏。
又,在第2傳熱部66之背面側,係設置有隔熱構件87,抑制來自第2傳熱部66之冷熱的釋放。
在板體91與處理容器10的下面之間,係設置有可沿上下方向伸縮之金屬製的蛇腹構造體即波紋管88。又,在底板92與處理容器10的下面之間亦相同地設置有波紋管89。波紋管88及89,係具有「將與處理容器10連接之被保持為真空的空間與大氣氛圍分離」的功能。
另外,在圖1中,係為了方便起見,賦予點來表示藉由平台旋轉機構54旋轉的部分及旋轉軸70。
[處理裝置及平台裝置之動作]
在處理裝置1中,係將處理容器10內設成為真空狀態,使平台裝置50的冷凍機60作動。又,將冷卻氣體(例如He氣體)經由冷卻氣體流路76供給至間隙G。藉此,藉由從保持為極低溫之冷凍機60傳遞至冷凍傳熱機構58的冷熱,平台52被保持為-20℃以下的極低溫。更具體而言,從冷凍機60經由冷凍傳熱體65傳遞至第2傳熱部66的冷熱會經由間隙G之冷卻氣體被傳遞至平台52,平台52被保持為-20℃以下的極低溫。
而且,藉由平台升降機構56,使平台52移動(下降)至搬送位置,並藉由搬送裝置(皆未圖示),將晶圓W從真空搬送室搬送至處理容器10內且載置於平台52上。其次,將直流電壓施加至卡盤電極62,並藉由靜電卡盤61靜電吸附晶圓W。而且,在晶圓W之背面,係傳熱氣體(例如He氣體)經由傳熱氣體流路75被供給至晶圓W背面,晶圓W亦與平台52相同地被保持為-20℃以下的極低溫。
其後,使平台52上升至處理位置,且一面使被保持為極低溫的平台52旋轉,一面進行成膜處理。
然而,專利文獻1中記載有如下述技術:經由冷凍傳熱體傳遞冷凍機之冷熱,並經由被供給至冷凍傳熱體與平台之間所形成之間隙的冷卻氣體,一面旋轉平台一面進行冷卻。
但是,由於專利文獻1之技術,係將冷凍傳熱體設置於平台之中央,並將平台旋轉機構設置於冷凍傳熱體的周圍,因此,平台旋轉機構為大規模且馬達大型化。又,因平台旋轉機構之存在,無法將冷凍機配置為接近平台,且冷凍傳熱體大型化(長型化)而冷凍機亦必需為大型者。而且,由於在冷凍傳熱體之周圍設置有平台旋轉機構,因此,維護性亦差。
對此,在本實施形態中,係設置從平台52之下面中心往下方延伸的旋轉軸70,藉由馬達71經由旋轉軸70旋轉平台,且將冷凍傳熱體65設置於平台52的下方之旋轉軸70的外側位置。
藉此,可不考慮冷凍傳熱體65之位置而將旋轉軸70設置於平台52的中心,並將馬達71設置於旋轉軸附近。因此,可使用小型者作為馬達71。又,由於像這樣地旋轉機構54與冷凍傳熱體65被分離,因此,可不考慮平台旋轉機構54而將冷凍機60配置於所期望的位置。因此,可將冷凍機60配置於比馬達71更上方,並可縮短冷凍傳熱體65的長度。又,由於可縮短冷凍傳熱體65的長度,因此,冷凍機60亦可小型化。因此,可使平台裝置50整體小型化。又,由於平台旋轉機構54與冷凍傳熱體65被分離設置,因此,平台旋轉機構54及冷凍傳熱機構58之零件的拆卸變得容易且維護性變得良好。
又,在冷凍傳熱體65如專利文獻1般地被設置於中央的情況下,係冷凍傳熱體65及第2傳熱部66之溫度分布容易直接被轉印至平台52及晶圓W,且容易形成同心圓狀的分布。對此,由於在本實施形態中,係冷凍傳熱體65被設置於偏離平台52之中心的位置,因此,藉由平台52之旋轉,溫度分布會變得均勻且使平台52及晶圓W的溫度分布變得更加均勻。
而且,由於在本實施形態中,係冷凍傳熱機構58具有與平台52對應而設置的第2傳熱部66,因此,經由冷凍傳熱機構58與平台52之冷卻氣體的熱交換性會提高,可有效率地冷卻平台52。特別是,由於平台52之第1傳熱部64的凸部64a與冷凍傳熱機構58之第2傳熱部66的凹部66b,係構成呈梳齒狀之熱交換部,且冷卻氣體被供給至彎曲的間隙G,因此,可更提高冷卻效率。
又,由於可使冷凍傳熱體65小型化(短型化),因此,在維護時,可將冷凍機60設成為加熱模式,在短時間內進行經由冷凍傳熱機構58而使平台52恢復至常溫的作業,並可縮短維護時間。除此之外,由於可藉由加熱器63直接加熱平台52,因此,可進一步縮短維護時間。
<第2實施形態>
其次,說明關於第2實施形態。
圖3,係表示具備了第2實施形態之平台裝置的處理裝置之一例的概略剖面圖,圖4,係表示第2實施形態之平台裝置之一例的平面圖。
本實施形態之平台機構50’,係具備有冷凍傳熱機構58’以代替第1實施形態的冷凍傳熱機構58,該冷凍傳熱機構58’,係具有如下述構造:具有複數個(在本例中,係2個)冷凍傳熱體65,且該些複數個冷凍傳熱體65被連接於第2傳熱部66。冷凍機60,係對應於複數個冷凍傳熱體65而設置複數個。但是,亦可對複數個冷凍傳熱體65設置共通的冷凍機。平台50’之其他構成,係與第1實施形態的平台裝置50相同。
在本實施形態中,由於呈圓柱狀之冷凍傳熱體65,係被設置於平台52的下方,因此,冷凍傳熱體58’雖具有複數個冷凍傳熱體65,但佔置空間與第1實施形態之冷凍傳熱體58相比並未增大。因此,平台裝置50’,係與第1實施形態之平台裝置50相同地,可實現小型化。又,即便設置複數個冷凍傳熱體65,維護性亦良好。因此,根據本實施形態之平台裝置50’,可在維持小型化及良好之維護性的狀態下,僅以冷凍傳熱體65之數量提高平台52的冷卻效果。
特別是,如本實施形態般,在將平台52經由冷卻氣體冷卻成-23~-223℃(250~50K)這樣的極低溫之情況下,係像這樣地配置複數個圓柱狀之冷凍傳熱體65以強化冷卻是有效的。
在圖4中,雖係例示了具有2個呈圓柱狀之冷凍傳熱體65的數量者作為冷凍傳熱體58’,但在本實施形態中,呈圓柱狀之冷凍傳熱體65的數量並不特別限定,只要為可收容於平台52之下方的數量即可。圖5,係表示配置了4個冷凍傳熱體65的例子。又,在圖4、圖5中雖均等地設置複數個冷凍傳熱體65,但亦可如圖6所示般,使複數個冷凍傳熱體65不均勻分布。
<第3實施形態>
其次,說明關於第3實施形態。
圖7,係表示具備了第3實施形態之平台裝置的處理裝置之一例的概略剖面圖,圖8,係表示第3實施形態之平台裝置之一例的平面圖。
本實施形態之平台機構150,係具備有冷凍傳熱機構158以代替第1實施形態的冷凍傳熱機構58,該冷凍傳熱機構158,係具有如下述構造:具有圓筒狀之冷凍傳熱體165,且冷凍傳熱體165被連接於第2傳熱部66。冷凍傳熱體165,係被固定配置為包圍旋轉軸70之周圍,與冷凍傳熱體65相同地,藉由純銅(Cu)等的熱傳導性高之材料所形成。
冷凍傳熱體165,係經由連接構件161被連接於與第1實施形態相同的冷凍機60,該連接構件161,係藉由純銅(Cu)等的熱傳導性高之材料所形成。連接構件161,係被支撐於底板191。
在冷凍傳熱體165,係形成有可使冷卻氣體流通於其內部的冷卻氣體供給路徑176,冷卻氣體供給路徑176,係貫通第2傳熱部66且延伸。而且,從氣體供給源(未圖示)所供給之冷卻氣體,係經由冷卻氣體供給路徑176被供給至間隙G,冷凍機60的冷熱經由冷凍傳熱機構158及冷卻氣體被傳遞至平台52,且平台52被冷卻成極低溫。
冷凍傳熱機構158,係被支撐於固定框架180。又,在第1傳熱部64之圓筒部64b的外側下端部,係安裝有往下方延伸且呈帶階差圓筒狀的蓋構件177,蓋構件177亦可隨著平台52之旋轉而旋轉。蓋構件177,係被設置為覆蓋第2傳熱部66及冷凍傳熱體165的上部。蓋構件177,係上側成為大徑部,下側成為小徑部。在冷凍傳熱體165之外周,係設置有隔熱構造體159。又,在第2傳熱體66之背面,係設置有隔熱構件187。
在固定框架180與蓋構件177的小徑部之間,係設置有磁性流體密封181。又,在固定框架180之磁性流體密封181附近部分,係設置有對磁性流體密封181進行加熱的加熱器182。又,在旋轉軸70與底板191之間亦設置有磁性流體密封183,在磁性流體密封183附近,係設置有對磁性流體密封83進行加熱的加熱器184。可藉由磁性流體密封81,83,在氣密地密封了蓋構件177與固定框架180之間及旋轉軸70與底板191之間的狀態下,經由旋轉軸70使平台52旋轉。又,可藉由加熱器182,184,對磁性流體密封181,183進行加熱,並可抑制因磁性流體的溫度下降所造成之密封性能下降或產生結露的情形。平台裝置150之其他構成,係與第1實施形態的平台裝置50相同。
由於在本實施形態中,係以包圍旋轉軸70的方式,在平台52之下方位置設置圓筒狀的冷凍傳熱體165,因此,與第1實施形態相同地,可實現平台裝置150的小型化。又,由於即便冷凍傳熱體165之厚度較薄,亦可確保傳遞冷熱的體積,因此,可使冷凍傳熱體165之外徑小徑化,並可達到省空間化,並且可使磁性流體密封181小徑化。又,亦可確保良好的維護性。
<其他應用>
以上,雖說明了關於實施形態,但此次所揭示之實施形態,係所有的要點均為例示,不應被認為限制性之內容。上述之實施形態,係亦可不脫離添附之申請專利範圍及其主旨,以各種形態進行省略、置換、變更。
例如,在上述實施形態中,雖係表示使用了圓柱狀或被配置為包圍旋轉軸之圓筒狀之冷凍傳熱體的例子,但只要冷凍傳熱體被配置於旋轉軸的外側,則並不限定於此。
又,在上述實施形態中,雖係以應用於TMR元件所使用之磁性膜之濺鍍成膜的情形為例而進行了說明,但只要為必需在極低溫下進行均勻處理的處理,則不限於此。
1:處理裝置
10:處理容器
30:靶材
50,50’,150:平台裝置
52:平台
54:平台旋轉機構
56:平台升降機構
58,58’,158:冷凍傳熱機構
60:冷凍機
61:靜電卡盤
62:卡盤電極
64:第1傳熱部
65,165:冷凍傳熱體
66:第2傳熱部
70:旋轉軸
71:馬達
76,176:冷卻氣體供給路徑
81,83,181,183:磁性流體密封
G:間隙
W:晶圓(基板)
[圖1]表示具備了第1實施形態之平台裝置的處理裝置之一例的概略剖面圖。
[圖2]表示第1實施形態之平台裝置之一例的平面圖。
[圖3]表示具備了第2實施形態之平台裝置的處理裝置之一例的概略剖面圖。
[圖4]表示第2實施形態之平台裝置之一例的平面圖。
[圖5]表示第2實施形態之平台裝置之其他例的平面圖。
[圖6]表示第2實施形態之平台裝置之另外其他例的平面圖。
[圖7]表示具備了第3實施形態之平台裝置的處理裝置之一例的概略剖面圖。
[圖8]表示第3實施形態之平台裝置之一例的平面圖。
1:處理裝置
10:處理容器
30:靶材
50:平台裝置
52:平台
54:平台旋轉機構
56:平台升降機構
58:冷凍傳熱機構
59:隔熱構造體
60:冷凍機
61:靜電卡盤
62:卡盤電極
63:加熱器
64:第1傳熱部
64a:凸部
64b:圓筒部
64c:突出部
65:冷凍傳熱體
66:第2傳熱部
66a:穴
66b:凹部
70:旋轉軸
71:馬達
72:絕緣構件
73:軸承
74:殼體
75:絕緣構件
76:冷卻氣體供給路徑
77:蓋構件
80:固定框架
80a:圓筒部
81:磁性流體密封
82a:加熱器
82b:加熱器
83:磁性流體密封
84:加熱器
85:密封構件
86:密封構件
87:隔熱構件
88:波紋管
89:波紋管
91:板體
92:底板
G:間隙
W:晶圓(基板)
Claims (13)
- 一種平台裝置,係在處理基板之處理裝置中,保持基板,該平台裝置,其特徵係,具有: 平台,在處理容器內保持基板; 平台旋轉機構,具有旋轉軸及馬達,該旋轉軸,係以延伸於下方的方式,被設置於前述平台之下面中心,該馬達,係經由前述旋轉軸,使前述平台旋轉;及 冷凍傳熱機構,被固定配置於前述平台之下方之前述旋轉軸的外側位置,具有傳遞冷凍機之冷熱的冷凍傳熱體,並經由間隙被設置於與前述平台之間。
- 如請求項1之平台裝置,其中,更具有: 冷卻流體供給機構,將冷卻流體供給至前述間隙,該冷卻流體,係用以將前述冷凍傳熱機構的冷熱傳遞至前述平台。
- 如請求項2之平台裝置,其中, 前述冷卻流體,係冷卻氣體。
- 如請求項1~3中任一項之平台裝置,其中, 前述冷凍傳熱機構,係更具有:平台側傳熱部,經由前述間隙,對應於前述平台而設置,且連接有前述冷凍傳熱體。
- 如請求項4之平台裝置,其中, 在前述平台與前述平台側傳熱部之間,經由前述間隙具有梳齒狀的熱交換部。
- 如請求項1~5中任一項之平台裝置,其中, 前述冷凍傳熱體,係呈柱狀,並被配置於偏離前述旋轉軸的位置。
- 如請求項6之平台裝置,其中,前述冷凍傳熱機構,係具有複數個前述冷凍傳熱體。
- 如請求項1~5中任一項之平台裝置,其中, 前述冷凍傳熱體,係呈圓筒狀,並被配置為包圍前述旋轉軸。
- 如請求項1~8中任一項之平台裝置,其中, 前述平台旋轉機構之前述馬達,係被配置於前述旋轉軸之周圍的直接驅動馬達。
- 如請求項1~9中任一項之平台裝置,其中, 前述平台,係被冷卻成-23~-223℃的溫度。
- 一種處理裝置,係處理基板,該處理裝置,其特徵係,具有: 處理容器,收容基板; 如請求項1~10中任一項之平台裝置,用以在前述處理容器內將基板保持為可旋轉;及 處理機構,在前述處理容器內,對基板施予處理。
- 如請求項11之處理裝置,其中, 前述處理機構,係具有:濺鍍成膜用之靶材,被配置於前述真空容器內之前述平台的上方。
- 如請求項12之處理裝置,其中, 前述靶材,係由「使被使用於穿隧磁阻元件之磁性體成膜」的材料所構成。
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