TW202104836A - External reflection-type three dimensional surface profilometer - Google Patents
External reflection-type three dimensional surface profilometer Download PDFInfo
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本發明是有關於一種三維形貌測量儀,且特別是有關於一種外反射式三維形貌測量儀。The invention relates to a three-dimensional shape measuring instrument, and in particular to an external reflection type three-dimensional shape measuring instrument.
目前表面形貌的測量方式一般分為接觸式測量法與非接觸式測量法兩種。其中,由於接觸式測量法是以探針接觸待測物的方式來進行測量,恐存在有探針刮傷待測物的風險。並且,接觸式測量法的量測精確度會受到探針的尺寸及品質的影響,故需要重複量測數次以消除或降低探針的尺寸及品質對於量測的精確度的影響,當所需測量的範圍較大時所需的測量時間便會大幅增加。而非接觸式測量法則以共軛焦顯微鏡較為常見,雖然共軛焦顯微鏡的解析度高且可避免接觸式測量法所可能產生的刮傷風險,然而共軛焦顯微鏡的量測範圍小,當測量面積較大時所需的測量時間亦會隨之大幅增加。At present, the measurement methods of surface topography are generally divided into contact measurement method and non-contact measurement method. Among them, since the contact measurement method uses the probe to contact the object to be measured, there is a risk that the probe may scratch the object to be measured. In addition, the measurement accuracy of the contact measurement method will be affected by the size and quality of the probe, so it is necessary to repeat the measurement several times to eliminate or reduce the impact of the size and quality of the probe on the accuracy of the measurement. When the range to be measured is larger, the required measurement time will increase significantly. Conjugate focus microscope is more common for non-contact measurement method. Although the resolution of conjugate focus microscope is high and the risk of scratches that may be caused by contact measurement method can be avoided, the measurement range of conjugate focus microscope is small. When the measurement area is large, the measurement time required will also increase substantially.
因此,目前仍亟需一種測量表面形貌的方法,可避免接觸式測量法可能刮傷待測物的問題並能縮短測量的所需時間。Therefore, there is still an urgent need for a method for measuring surface topography, which can avoid the problem that the contact measurement method may scratch the object to be measured and can shorten the time required for measurement.
本發明係有關於一種外反射式三維形貌測量儀,能夠以非接觸式的方法測量待測物之表面形貌,故可避免接觸式測量法可能刮傷待測物的問題,並能縮短測量的所需時間。The present invention relates to an external reflection type three-dimensional topography measuring instrument, which can measure the surface topography of the object to be measured in a non-contact method, so that it can avoid the problem that the contact measurement method may scratch the object to be measured, and can shorten The time required for the measurement.
根據本發明之一方面,提出一種外反射式三維形貌測量儀。外反射式三維形貌測量包括一光源、一光偏折元件、一影像擷取模組及一運算處理器。光源用以提供一光束。光偏折元件包括一內部部分及一外反射面,其中光束經內部部分入射並在穿出外反射面後偏折至一待測物,之後產生對應於待測物之表面形貌的一光影,光影再經由外反射面反射,經一成像透鏡將此光影成像在影像擷取模組。影像擷取模組用以接收光影以產生一待測影像。運算處理器對該待測影像進行運算,以求得待測物之表面形貌的資訊。According to one aspect of the present invention, an external reflection type three-dimensional shape measuring instrument is provided. The external reflection type three-dimensional shape measurement includes a light source, a light deflection element, an image capture module and an arithmetic processor. The light source is used to provide a light beam. The light deflection element includes an inner part and an outer reflecting surface. The light beam enters through the inner part and is deflected to an object to be measured after passing through the outer reflecting surface, and then generates a light and shadow corresponding to the surface topography of the object to be measured , The light and shadow are reflected by the external reflecting surface, and the light and shadow are imaged on the image capturing module through an imaging lens. The image capturing module is used for receiving light and shadow to generate an image to be measured. The arithmetic processor performs calculations on the image to be measured to obtain information on the surface topography of the object to be measured.
根據本發明之又一方面,提出一種外反射式三維形貌測量儀。外反射式三維形貌測量包括一光源、一光偏折元件、一光影分光鏡、一影像擷取模組及一運算處理器。光源用以提供一光束。光偏折元件包括一內部部分及一外反射面,其中光束經內部部分入射並在穿出外反射面後偏折至一待測物,之後產生對應於待測物之表面形貌的一光影。光影分光鏡將待測物所反射的光影分為一第一光影以及一第二光影,其中第二光影經由外反射面反射。影像擷取模組包括一第一影像擷取器以及一第二影像擷取器,其中第一影像擷取器用以接收第一光影以產生一參考影像,第二影像擷取器用以接收第二光影以產生一待測影像。參考影像與待測影像分別由二個相同焦距的成像透鏡分別成像在第一影像擷取器上與第二影像擷取器上。運算處理器對參考影像與待測影像進行運算,以求得待測物之表面形貌的資訊。According to another aspect of the present invention, an external reflection type three-dimensional shape measuring instrument is provided. The external reflection type three-dimensional shape measurement includes a light source, a light deflection element, a light and shadow beam splitter, an image capture module and an arithmetic processor. The light source is used to provide a light beam. The light deflection element includes an inner part and an outer reflecting surface. The light beam enters through the inner part and is deflected to an object to be measured after passing through the outer reflecting surface, and then generates a light and shadow corresponding to the surface topography of the object to be measured . The light and shadow beam splitter divides the light and shadow reflected by the object to be measured into a first light and shadow and a second light and shadow, wherein the second light and shadow are reflected by the external reflecting surface. The image capture module includes a first image capturer and a second image capturer. The first image capturer is used to receive the first light and shadow to generate a reference image, and the second image capturer is used to receive the second image capture. Light and shadow to generate an image to be measured. The reference image and the image to be measured are respectively imaged on the first image capturer and the second image capturer by two imaging lenses with the same focal length. The calculation processor performs calculations on the reference image and the image to be measured to obtain the information of the surface topography of the object to be measured.
為了對本發明之上述及其他方面有更佳的瞭解,下文特舉實施例,並配合所附圖式詳細說明如下:In order to have a better understanding of the above and other aspects of the present invention, the following specific examples are given in conjunction with the accompanying drawings to describe in detail as follows:
第1圖繪示依照本發明一實施例的外反射式三維形貌測量儀100的示意圖。FIG. 1 is a schematic diagram of an external reflection type three-dimensional
請參照第1圖,外反射式三維形貌測量儀100包括一光源110、一導光組件120、一光偏折元件130、一成像透鏡150、一影像擷取模組160以及一運算處理器170。光源110用以提供一光束。在本實施例中,光源110可為紅光之發光二極體,不僅可以降低成本也可以縮小體積,然本發明並不以此為限,光源110也可以是其他顏色的光。導光組件120包括一擴束器122、一分光稜鏡124以及一極化分光稜鏡126。擴束器122可用以將光束擴大為平行光束。在本實施例中,擴束器122可包括空間濾波器1221、透鏡1223與光圈1225。空間濾波器1221可包括一物鏡1221a及一位於該物鏡1221a與該透鏡1223間的針孔1221b。分光稜鏡124可位於擴束器122與極化分光稜鏡126之間。當光源110所提供的光束通過物鏡1221a後會聚焦至放置於物鏡1221a的聚焦點上的針孔1221b以濾除散射或繞射光,形成一無雜訊之點光源,而點光源會以球面波的形式發散,藉由透鏡1223成為光強度均勻的平行光,之後經由光圈1225調整光點的大小,並由分光稜鏡124進行分光。在一些實施例中,可使用光度計124p測量分光稜鏡124所分出之第一道光的光強度,以校正光源,可避免光源不穩定對量測所造成的影響。Please refer to Figure 1, the external reflection type three-dimensional
穿透分光稜鏡124的穿透光藉由極化分光稜鏡126進行分光,再入射至光偏折元件130。在一實施例中,極化分光稜鏡126可反射分出S偏振光,並將S偏振光入射至光偏折元件130,然本發明並不限於此,一般光(包括S偏振光以及P偏振光)亦可入射至光偏折元件130。光偏折元件130包括一內部部分130i及一外反射面130a,其中光束經內部部分130i入射並在穿出外反射面130a後偏折至一待測物140。在一實施例中,穿出外反射面130a後偏折至待測物140的光束與待測物140的表面之間所形成的入射角度為50°至90°,然本發明並不以此為限,此入射角度可為其他合適的角度。在一些實施例中,光偏折元件130可為一個三角稜鏡,且光偏折元件130還包括一個與外反射面130a形成有一夾角α1
的入射面130b,光束是自入射面130b入射內部部分130i,並在穿出外反射面130a後偏折至待測物140。在本實施例中,光偏折元件130可為一直角稜鏡,外反射面130a是直角稜鏡的斜面,而且外反射面130a與入射面130b之間之夾角α1
可以是30°,然而本發明並不限於此,外反射面130a與入射面130b之間之夾角α1
可以是其他合適的角度。在一些實施例中,光偏折元件130可以是一光柵結構。The transmitted light passing through the
光束穿出外反射面130a並偏折至一待測物140之後,產生對應於待測物140之表面形貌的一光影,該光影再經由外反射面130a反射。成像透鏡150能將該光影成像至影像擷取模組160。影像擷取模組160可用以接收光影以產生一待測影像。運算處理器170對該待測影像進行運算,以求得待測物140之表面形貌的資訊。After the light beam passes through the external
在本實施例中,透鏡1223及成像透鏡150的數量分別為1個,然本發明並不以此為限,透鏡1223及成像透鏡150的數量可分別為多個,端視需求而定。In this embodiment, the number of the
在一實施例中,待測物140所反射的光影是藉由光偏折元件130之外反射面130a的單一次反射,入射至成像透鏡150。In one embodiment, the light and shadow reflected by the
在一實施例中,待測物140所反射的光影在入射至成像透鏡150之後是直接入射至影像擷取模組160。亦即,成像透鏡150與影像擷取模組160之間可不設置其他的元件(例如四邊形稜鏡或物鏡)。In one embodiment, the light and shadow reflected by the
在一些實施例中,影像擷取模組160可以是電荷耦合元件(CCD, charge-coupled device)。電荷耦合元件是一種積體電路,具有整齊排列之電容,每一個像素可將光訊號轉為電能,此後再轉為數位訊息而輸出為圖像。運算處理器170可例如是一電腦。In some embodiments, the image capturing
在本實施例中,待測物140的位置可先擺放一平面鏡,藉由影像擷取模組160接收平面鏡的影像取得一參考影像,並同時記錄拍攝平面鏡之影像時之光強度(例如是藉由分光稜鏡124之分光量測得知)。此後,將平面鏡移除,擺放待測物140,即可藉由影像擷取模組160接收待測物140的影像而取得一待測影像,亦可記錄當時的光強度以完成測量。運算處理器170可對該參考影像與該待測影像進行運算,以求得待測物140之表面形貌的資訊。簡言之,令參考影像的分光強度為I1
,待測影像的光強度為I2
,即可藉由運算處理器170得知反射率R=。由於反射率R與入射角度θ呈一線性關係(如第3圖所示),故運算處理器170可藉由反射率R換算得知待測物140的高度(如第5~6圖及相關說明所示)。因此,運算處理器170將待測物140之待側影像及參考影像相除並經運算之後可得到待測物140的三維形貌圖(未繪示)以及二維形貌剖面圖(如第7圖所示)。In this embodiment, a flat mirror can be placed at the position of the
第2圖繪示依照本發明又一實施例的外反射式三維形貌測量儀200的示意圖,外反射式三維形貌測量儀200是類似於外反射式三維形貌測量儀100,其不同之處在於成像透鏡組件250與影像擷取模組260的設計以及增加一光影分光鏡280,其他相同或類似之處將不再詳細描述。Figure 2 shows a schematic diagram of an external reflection type three-dimensional
請參照第2圖,外反射式三維形貌測量儀200一光源110、一導光組件120、一光偏折元件230、光影分光鏡280、一成像透鏡組件250、一影像擷取模組260以及一運算處理器170。光源110用以提供一光束。在本實施例中,光源110可為紅光之發光二極體,不僅可以降低成本也可以縮小體積,然本發明並不以此為限,光源110也可以是其他顏色的光。導光組件120包括一擴束器122、一分光稜鏡124以及一極化分光稜鏡126。在本實施例中,擴束器122可包括空間濾波器1221、透鏡1223與光圈1225。空間濾波器1221可包括一物鏡1221a及一位於該物鏡1221a與該透鏡1223間的針孔1221b。擴束器122用以將光束擴大為平行光束,極化分光稜鏡126進行分光,再入射至光偏折元件230。Please refer to Figure 2, the external reflection type three-dimensional
在此一實施例中,極化分光稜鏡126可反射分出S偏振光,並將S偏振光入射至光偏折元件230,然本發明並不限於此,一般光(包括S偏振光以及P偏振光)亦可入射至光偏折元件230。光偏折元件230包括一內部部分230i及一外反射面230a,其中光束經內部部分230i入射並在穿出外反射面230a後偏折至一待測物140。在一實施例中,穿出外反射面230a後偏折至待測物140的光束與待測物140的表面之間所形成的入射角度為50°至90°,然本發明並不以此為限,此入射角度可為其他合適的角度。在一些實施例中,光偏折元件230可為一個三角稜鏡,且光偏折元件230還包括一個與外反射面230a形成有一夾角α2
的入射面230b,光束是自入射面230b入射內部部分230i,並在穿出外反射面230a後偏折至待測物140。在本實施例中,光偏折元件230可為一直角稜鏡,外反射面230a是直角稜鏡的斜面,而且外反射面230a與入射面230b之間之夾角α2
可以是30°,然而本發明並不限於此,外反射面230a與入射面230b之間之夾角α2
可以是其他合適的角度。在一些實施例中,光偏折元件230可以是一光柵結構。In this embodiment, the
光束穿出外反射面230a並偏折至一待測物140之後,產生對應於待測物140之表面形貌的一光影。光影分光鏡280將待測物140所反射的該光影分為一第一光影以及一第二光影。成像透鏡組件250包括一第一成像透鏡252及一第二成像透鏡254。影像擷取模組260包括一第一影像擷取器262以及一第二影像擷取器264。第一成像透鏡252能將第一光影成像至第一影像擷取器262。第二光影經由外反射面230a反射至第二成像透鏡254,第二成像透鏡254能將第二光影成像至第二影像擷取器264。第一影像擷取器262用以接收第一光影以產生一參考影像,第二影像擷取器264用以接收第二光影以產生一待測影像。運算處理器170對參考影像與待測影像進行運算,以求得待測物140之表面形貌的資訊。簡言之,令參考影像的分光強度為I1
,待測影像的光強度為I2
,即可藉由運算處理器170得知反射率R=。由於反射率R與入射角度θ呈一線性關係(如第3圖所示),故運算處理器170可藉由反射率R換算得知待測物140的高度(如第5~6圖及相關說明所示)。因此,運算處理器170將待測物140之參考影像及待側影像相除並經運算之後可得到待測物140的三維形貌圖(未繪示)以及二維形貌剖面圖(如第8圖所示)。After the light beam passes through the outer
在此一實施例中,待測物140所反射的第二光影是藉由光偏折元件230之外反射面230a的單一次反射,入射至第二成像透鏡254。In this embodiment, the second light and shadow reflected by the
在此一實施例中,待測物140所反射的第一光影在入射至第一成像透鏡252之後是直接入射至第一影像擷取器262。亦即,第一成像透鏡252與第一影像擷取器262之間可不設置其他的元件(例如四邊形稜鏡或物鏡)。待測物140所反射的第二光影在入射至第二成像透鏡254之後是直接入射至第二影像擷取器264。亦即,第二成像透鏡254與第二影像擷取器264之間可不設置其他的元件(例如四邊形稜鏡或物鏡)。In this embodiment, the first light and shadow reflected by the
在本實施例中,透鏡1223、第一成像透鏡252及第二成像透鏡254的數量分別為1個,然本發明並不以此為限,透鏡1223、第一成像透鏡252及第二成像透鏡254的數量可分別為多個,端視需求而定。In this embodiment, the number of the
在一些實施例中,第一影像擷取器262及第二影像擷取器264可分別為電荷耦合元件。運算處理器170可例如是一電腦。In some embodiments, the
第3圖繪示依照本發明之一實施例的外反射式三維形貌測量儀的待測物140的光影反射率(R)與入射角度(θ)之間之關係的示意圖。第3圖示例性繪示S偏振光入射待測物140所形成的反射率與入射角度的關係,然本發明並不以此為限,亦可使用一般光(包括S偏振光及P偏振光)入射至待測物140進行量測。FIG. 3 is a schematic diagram of the relationship between the light and shadow reflectance (R) and the incident angle (θ) of the
本發明是採用外反射式三維形貌測量儀對於待測物的形貌進行測量,亦即是待測物140所反射之光影或第二光影是經由外反射面130a或230a反射至成像透鏡150或第二成像透鏡254,而非是在光偏折元件130或230的內部部分130i或230i進行反射。相較於內反射式三維形貌測量儀而言,由於外反射式的測量方法可有較大的角度及高度量測範圍,可量測之待測物的面積亦較大,較適合用於大面積的三維表面形貌量測,如第4圖所示。The present invention uses an external reflection type three-dimensional shape measuring instrument to measure the shape of the object to be measured, that is, the light and shadow reflected by the
第4圖繪示光線藉由光偏折元件進行外反射及內反射時之入射角度θ與反射率R之間之關係的曲線圖,其中虛線線段表示內反射的曲線,實線線段表示外反射的曲線。Figure 4 is a graph showing the relationship between the incident angle θ and the reflectivity R when light is externally reflected and internally reflected by the light deflection element. The dashed line segment represents the curve of internal reflection, and the solid line segment represents external reflection. Curve.
請參照第4圖,TE表示S偏振光的曲線,TM表示P偏振光的曲線。當光線藉由光偏折元件進行內反射時,可用的最大入射角度θC
可為41.81°;當光線藉由光偏折元件進行外反射時,可用的最大入射角度θC
可為90°,可見外反射可用的入射角度範圍較大,可測量的角度亦相對較大。當P偏振光藉由光偏折元件進行內反射時,入射角度θ’P
若為33.69°則反射率為0(又稱作布魯斯特角)。當P偏振光藉由光偏折元件進行外反射時,入射角度θP
若為56.31°則反射率為0(又稱作布魯斯特角),也就是說,當入射角度θP
為56.31°時,即無法使用P偏振光,因此,利用極化分光稜鏡126分離出S偏振光可以避免特定入射角度無法使用的問題。Please refer to Figure 4, TE represents the curve of S-polarized light, and TM represents the curve of P-polarized light. When the light is internally reflected by the light deflection element, the usable maximum incident angle θ C can be 41.81°; when the light is externally reflected by the light deflection element, the usable maximum incident angle θ C can be 90°, It can be seen that the usable incident angle range of external reflection is relatively large, and the measurable angle is relatively large. When the P-polarized light deflected by the reflection element, the incident angle θ 'P is 33.69 ° when the reflectivity of 0 (also called Brewster's angle). When P-polarized light is externally reflected by the light deflection element, if the incident angle θ P is 56.31°, the reflectance is 0 (also called Brewster angle), that is, when the incident angle θ P is 56.31° , That is, P-polarized light cannot be used. Therefore, the use of
第5圖繪示依照本發明之一實施例的外反射式三維形貌測量儀的成像系統的示意圖。FIG. 5 is a schematic diagram of an imaging system of an external reflection type three-dimensional profile measuring instrument according to an embodiment of the present invention.
請參照第5圖,本發明之外反射式三維形貌測量儀100及200的成像系統是藉由成像透鏡350(例如是成像透鏡150、第一成像透鏡252或第二成像透鏡254)成像。成像路徑從待測物140的反射光影開始,在外反射面(例如是130a及230a)反射經過成像透鏡350(例如是成像透鏡150、第一成像透鏡252或第二成像透鏡254)聚焦,最後成像在影像擷取模組360(例如是影像擷取模組160及260)。如第5圖所示,令XS
為物體中心之高度,XS
’為物體邊緣之高度,X1
為像中心之高度,X1
’為像邊緣之高度,則由橫向放大率的定義可得知下列式1-1:式1-1Referring to FIG. 5, the imaging systems of the reflective three-dimensional
令成像透鏡350的中心點為O,則由ΔXS
’XS
O與ΔX1
’X1
O的相似三角形可得下列式1-2:式1-2The
將式1-2代回式1-1可得下列式1-3所示的放大倍率:式1-3Substituting formula 1-2 back to formula 1-1 can obtain the magnification shown in formula 1-3: Formula 1-3
第6圖繪示依照本發明之一實施例的外反射式三維形貌測量儀的待測物量測原理的示意圖。FIG. 6 is a schematic diagram of the measuring principle of the object to be measured of the external reflection type three-dimensional shape measuring instrument according to an embodiment of the present invention.
請參照第6圖,當入射光L垂直入射至待測物140上時,因待測物140表面可能不平整,所以突起處會帶有微小的傾斜角,使得反射光會以傾斜2倍的傾斜角離開。其中,Δα表示待測物140的傾斜角,Δh表示待測物140的高度,Δx表示待測物140相對於影像擷取模組160或260之每一個畫素之間隔的大小。由第6圖可得到如下列式2-1所示的Δα、Δh及Δx的關係式:式2-1Please refer to Figure 6, when the incident light L is perpendicular to the
由式2-1可推導至下列式2-2:式2-2From equation 2-1, it can be derived to the following equation 2-2: Formula 2-2
由於入射光L會以2倍的傾斜角Δα離開待測物140並入射至光偏折元件130或230的外反射面130a或230a,外反射面130a或230a的入射角Δθ=2Δα,則可得到下列式2-3:式2-3Since the incident light L will leave the object under
若將影像擷取模組160或260之每一個畫素之間隔的大小ΔX除以放大率MT
(如式1-3所示)則可得待測物140的高度Δh,如下列式2-4所示:
Δh=tan()式2-3If the size ΔX of the interval between each pixel of the
為驗證本發明的效果,本發明之一實施例之外反射式三維形貌測量儀100與200的量測結果係與現有的雷射掃描式共軛焦顯微鏡(Laser Scanning Confocal Microscope)及薄膜厚度輪廓測量儀(alpha-step)的量測結果進行比較。外反射式三維形貌測量儀100是以單影像分析的方式進行測量。外反射式三維形貌測量儀200是以雙影像分析的方式進行測量。In order to verify the effect of the present invention, the measurement results of the reflective three-dimensional
第7A圖繪示依照本發明之一實施例之外反射式三維形貌測量儀100所測量之待測物140的二維形貌的剖面圖,其中橫坐標表示待測物之x軸方向上的形貌變化(單位為微米),縱坐標表示待測物之z軸方向上的形貌變化(單位為微米)(亦即是高度h)。第7B圖繪示對第7A圖中A點測量10次之結果。FIG. 7A shows a cross-sectional view of the two-dimensional topography of the
請參照第7A及7B圖,待測物140之表面形貌可包括凸起的波峰的最高點:A點及B點。若將A點量測10次並與雷射掃描式共軛焦顯微鏡的量測結果相比較,可得最大誤差值為0.97%,標準差為0.07微米。Referring to FIGS. 7A and 7B, the surface topography of the
第8A圖繪示依照本發明之又一實施例之外反射式三維形貌測量儀200所測量之待測物140的二維形貌的剖面圖,其中橫坐標表示待測物之x軸方向上的形貌變化(單位為微米),縱坐標表示待測物之z軸方向上的形貌變化(單位為微米)(亦即是高度h)。第8B圖繪示對第8A圖中A點測量10次之結果。Figure 8A shows a cross-sectional view of the two-dimensional shape of the
請參照第8A及8B圖,待測物140之表面形貌可包括凸起的波峰的最高點:A點及B點。若將A點量測10次並與雷射掃描式共軛焦顯微鏡相比較,可得最大誤差值為1.05%,標準差為0.06微米。Please refer to FIGS. 8A and 8B. The surface topography of the
將本發明之外反射式三維形貌測量儀100(實施例1)及外反射式三維形貌測量儀200(實施例2)之上述測量結果與雷射掃描式共軛焦顯微鏡(比較例1)及薄膜厚度輪廓測量儀(比較例2)之量測結果進行比較,如下列表一所示。The above-mentioned measurement results of the external reflection type three-dimensional shape measuring instrument 100 (Example 1) and the external reflection type three-dimensional shape measuring instrument 200 (Example 2) of the present invention are compared with the laser scanning conjugate focus microscope (Comparative Example 1). ) And the measurement results of the film thickness profile measuring instrument (Comparative Example 2), as shown in Table 1 below.
表一
由表一的結果可知,本發明之外反射式三維形貌測量儀100(實施例1)的最小誤差為0.18%,外反射式三維形貌測量儀200(實施例2)的最小誤差為0.12%。由此可見,本發明之外反射式三維形貌測量儀100及200的量測誤差小,可準確量測待測物140之表面形貌。From the results in Table 1, it can be seen that the minimum error of the external reflection type three-dimensional shape measuring instrument 100 (Example 1) of the present invention is 0.18%, and the minimum error of the external reflection type three-dimensional shape measuring instrument 200 (Example 2) is 0.12. %. It can be seen that the measurement error of the reflective three-dimensional
下列表二進一步比較雷射掃描式共軛焦顯微鏡(比較例1)、薄膜厚度輪廓測量儀(比較例2)及本發明之外反射式三維形貌測量儀200(實施例2)在量測範圍、量測時間及儀器成本上的差別。The following table 2 further compares the laser scanning conjugate focus microscope (Comparative Example 1), the film thickness profile measuring instrument (Comparative Example 2) and the reflective three-dimensional profile measuring instrument 200 (Example 2) outside the present invention. Differences in range, measurement time, and instrument cost.
表二
由表二的結果可知,雷射掃描式共軛焦顯微鏡(比較例1)解析度雖然高,但是當測量較大範圍的待測物時所需量測時間較長,且雷射掃描式共軛焦顯微鏡的儀器價格相當昂貴。相對地,根據本發明之一實施例的外反射式三維形貌測量儀不但在量測上的準確度相當接近於共軛焦顯微鏡,能夠在相對較短的時間之內測量較大範圍的待測物,並且外反射式三維形貌測量儀的儀器價格相對較低(例如是10萬元以內),可大幅降低量測表面形貌所費的時間及儀器成本。From the results in Table 2, it can be seen that although the resolution of the laser scanning conjugate focus microscope (Comparative Example 1) is high, the measurement time is longer when measuring a larger range of the object to be measured, and the laser scanning type The equipment of the yoke microscope is quite expensive. In contrast, the external reflection type three-dimensional profile measuring instrument according to an embodiment of the present invention not only has a measurement accuracy that is quite close to that of a conjugate focus microscope, but also can measure a larger range of samples in a relatively short time. The cost of the external reflection type three-dimensional topography measuring instrument is relatively low (for example, less than 100,000 yuan), which can greatly reduce the time and cost of measuring the surface topography.
綜上所述,雖然本發明已以實施例揭露如上,然其並非用以限定本發明。本發明所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾。因此,本發明之保護範圍當視後附之申請專利範圍所界定者為準。To sum up, although the present invention has been disclosed as above by embodiments, it is not intended to limit the present invention. Those with ordinary knowledge in the technical field to which the present invention belongs can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be subject to those defined by the attached patent scope.
100、200:外反射式三維形貌測量儀
110:光源
120:導光組件
122:擴束器
124:分光稜鏡
124p:光度計
126:極化分光稜鏡
130、230:光偏折元件
130a、230a:外反射面
130b、230b:入射面
130i、230i:內部部分
150、350:成像透鏡
160、260、360:影像擷取模組
170:運算處理器
250:成像透鏡組件
252:第一成像透鏡
254:第二成像透鏡
280:光影分光鏡
1221:濾波器
1221a:物鏡
1221b:針孔
1223:透鏡
1225:光圈
O:中心點
α1
、α2
:夾角100, 200: External reflection type three-dimensional shape measuring instrument 110: Light source 120: Light guide component 122: Beam expander 124:
第1圖繪示依照本發明一實施例的外反射式三維形貌測量儀的示意圖。 第2圖繪示依照本發明又一實施例的外反射式三維形貌測量儀的示意圖。 第3圖繪示依照本發明之一實施例的外反射式三維形貌測量儀的待測物的光影反射率與入射角之間之關係的示意圖。 第4圖繪示光線藉由光偏折元件進行外反射及內反射時之入射角度與反射率之間之關係的曲線圖。 第5圖繪示依照本發明之一實施例的外反射式三維形貌測量儀的成像系統的示意圖。 第6圖繪示依照本發明之一實施例的外反射式三維形貌測量儀的待測物量測原理的示意圖。 第7A圖繪示依照本發明之一實施例之外反射式三維形貌測量儀所測量之待測物的二維形貌的剖面圖。 第7B圖繪示對第7A圖中A點測量10次之結果。 第8A圖繪示依照本發明之又一實施例之外反射式三維形貌測量儀所測量之待測物的二維形貌的剖面圖。 第8B圖繪示對第8A圖中A點測量10次之結果。FIG. 1 is a schematic diagram of an external reflection type three-dimensional shape measuring instrument according to an embodiment of the present invention. FIG. 2 is a schematic diagram of an external reflection type three-dimensional shape measuring instrument according to another embodiment of the present invention. FIG. 3 is a schematic diagram of the relationship between the light and shadow reflectance of the object to be measured and the incident angle of the external reflection type three-dimensional profile measuring instrument according to an embodiment of the present invention. Fig. 4 is a graph showing the relationship between the incident angle and the reflectivity when light is externally reflected and internally reflected by the light deflection element. FIG. 5 is a schematic diagram of an imaging system of an external reflection type three-dimensional profile measuring instrument according to an embodiment of the present invention. FIG. 6 is a schematic diagram of the measuring principle of the object to be measured of the external reflection type three-dimensional shape measuring instrument according to an embodiment of the present invention. FIG. 7A is a cross-sectional view of the two-dimensional shape of the object to be measured measured by the reflective three-dimensional shape measuring instrument according to an embodiment of the present invention. Figure 7B shows the result of 10 measurements on point A in Figure 7A. FIG. 8A shows a cross-sectional view of the two-dimensional topography of the object to be measured measured by the reflective three-dimensional topography measuring instrument according to another embodiment of the present invention. Figure 8B shows the result of 10 measurements on point A in Figure 8A.
100:外反射式三維形貌測量儀 100: External reflection type three-dimensional shape measuring instrument
110:光源 110: light source
120:導光組件 120: Light guide component
122:擴束器 122: beam expander
124:分光稜鏡 124: Spectroscopy
124p:光度計 124p: photometer
126:極化分光稜鏡 126: Polarization Spectroscopy
130:光偏折元件 130: light deflection element
140:待測物 140: DUT
130a:外反射面 130a: External reflective surface
130b:入射面 130b: incident surface
130i:內部部分 130i: internal part
150:成像透鏡 150: imaging lens
160:影像擷取模組 160: Image capture module
170:運算處理器 170: arithmetic processor
1221:濾波器 1221: filter
1221a:物鏡 1221a: Objective
1221b:針孔 1221b: pinhole
1223:透鏡 1223: lens
1225:光圈 1225: aperture
α1:夾角 α 1 : included angle
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