TW202104684A - Dust container, apparatus and process of single crystal growth - Google Patents
Dust container, apparatus and process of single crystal growth Download PDFInfo
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- TW202104684A TW202104684A TW109114749A TW109114749A TW202104684A TW 202104684 A TW202104684 A TW 202104684A TW 109114749 A TW109114749 A TW 109114749A TW 109114749 A TW109114749 A TW 109114749A TW 202104684 A TW202104684 A TW 202104684A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D46/00—Filters or filtering processes specially modified for separating dispersed particles from gases or vapours
- B01D46/24—Particle separators, e.g. dust precipitators, using rigid hollow filter bodies
- B01D46/2403—Particle separators, e.g. dust precipitators, using rigid hollow filter bodies characterised by the physical shape or structure of the filtering element
- B01D46/2418—Honeycomb filters
- B01D46/2422—Mounting of the body within a housing
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D46/00—Filters or filtering processes specially modified for separating dispersed particles from gases or vapours
- B01D46/66—Regeneration of the filtering material or filter elements inside the filter
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02A—TECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE
- Y02A50/00—TECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE in human health protection, e.g. against extreme weather
- Y02A50/20—Air quality improvement or preservation, e.g. vehicle emission control or emission reduction by using catalytic converters
- Y02A50/2351—Atmospheric particulate matter [PM], e.g. carbon smoke microparticles, smog, aerosol particles, dust
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Abstract
Description
本發明係關於晶圓製造領域,尤其係關於一種集塵罐、單晶生長設備及單晶生長方法。The present invention relates to the field of wafer manufacturing, in particular to a dust collecting tank, single crystal growth equipment and single crystal growth method.
單晶矽片是晶片生產製造中最重要的原材料之一,其製造過程通常包括:對含矽材料(石英砂)進行脫氧提純以得到高純度的晶體矽,晶體矽經高溫成型和經旋轉拉伸等方法拉成圓形晶棒,之後經切割和研磨等製程即得到單晶矽片。提煉高純度的晶體矽並拉成晶棒的過程稱為單晶生長,通常在單晶爐中進行,這個過程決定了單晶矽片的純度。由於晶片製造產業對單晶矽片的純度要求越來越高,故晶圓廠致力於減少單晶生長過程中的污染,以提高單晶矽的純度。Monocrystalline silicon wafers are one of the most important raw materials in wafer production. The manufacturing process usually includes: deoxidizing and purifying silicon-containing materials (quartz sand) to obtain high-purity crystalline silicon. The crystalline silicon is formed by high-temperature molding and spinning. It is drawn into a round crystal rod by stretching and other methods, and then a single crystal silicon wafer is obtained through processes such as cutting and grinding. The process of refining high-purity crystalline silicon and pulling it into ingots is called single crystal growth, which is usually carried out in a single crystal furnace. This process determines the purity of the single crystal silicon wafer. As the wafer manufacturing industry has increasingly higher requirements for the purity of single crystal silicon wafers, fabs are committed to reducing pollution during the growth of single crystals in order to improve the purity of single crystal silicon.
單晶生長過程中不可避免地會產生氧化物顆粒,目前常用的做法是將含氧化物顆粒的尾氣經由真空泵排放至集塵罐中,集塵罐通常包括罐體以及位於罐體内的過濾芯,氧化物顆粒被過濾芯過濾後沈積在罐體內,過濾後的氣體則通過罐體上的排氣口被排出。但是這個過程中氧化物顆粒容易附著在過濾芯的表面,影響過濾芯的過濾性能,嚴重時甚至會導致過濾芯的堵塞。雖然晶圓廠在每次完成拉製晶棒時,會以人工方式清潔過濾芯,或採用壓力差反吹來達到清潔過濾芯的效果,但是人工清潔過濾芯需要對罐體進行拆解,不僅費時費力,而且可能對人體健康造成威脅;氣體反吹雖然比較便捷,但是如果過濾芯表面在進行反吹前已經被堵滿,那反吹的效果幾乎為零,會嚴重影響後續拉晶時的壓力,同時也會損壞真空泵的螺桿。如果過濾芯上的氧化物顆粒不能及時清除,則會影響單晶矽生長過程中的尾氣排放,影響單晶矽的品質,甚至在設備發生故障時,氧化物顆粒可能倒灌進單晶爐中,造成嚴重的生產事故。Oxide particles are inevitably produced during the growth of single crystals. The current common method is to discharge the exhaust gas containing oxide particles into a dust collecting tank via a vacuum pump. The dust collecting tank usually includes a tank body and a filter element located in the tank body. , The oxide particles are filtered by the filter element and deposited in the tank, and the filtered gas is discharged through the exhaust port on the tank. However, in this process, the oxide particles are easy to adhere to the surface of the filter element, which affects the filtration performance of the filter element, and even causes the blockage of the filter element in severe cases. Although the fab will manually clean the filter element every time the ingot is drawn, or use the pressure difference back blow to achieve the effect of cleaning the filter element, the manual cleaning of the filter element requires disassembly of the tank body, not only It is time-consuming and laborious, and may pose a threat to human health; although gas back-blowing is more convenient, if the surface of the filter element is blocked before back-blowing, the effect of back-blowing is almost zero, which will seriously affect the subsequent crystal pulling. Pressure will also damage the screw of the vacuum pump. If the oxide particles on the filter element cannot be removed in time, it will affect the exhaust emissions during the growth of the single crystal silicon, and affect the quality of the single crystal silicon. Even when the equipment fails, the oxide particles may be poured into the single crystal furnace. Cause serious production accidents.
鑑於上述習知技術的缺點,本發明的目的在於提供一種集塵罐、單晶生長設備及單晶生長方法,用於解決現有技術中以人工方式清潔集塵罐費時費力,而氣體反吹效果差,以及因氧化物顆粒不能及時去除引發的單晶矽品質下降等问题。In view of the shortcomings of the above-mentioned conventional technology, the purpose of the present invention is to provide a dust collecting tank, a single crystal growth device and a single crystal growth method, which are used to solve the time-consuming and laborious cleaning of the dust collecting tank in the prior art, and the gas blowback effect Poor, and the single crystal silicon quality degradation caused by the inability to remove oxide particles in time.
為實現上述目的及其他相關目的,本發明提供一種集塵罐,所述集塵罐包括:罐體,所述罐體上具有進氣口、排氣口及除塵口;過濾裝置,位於所述罐體内;所述過濾裝置包括隔離盤及至少一個過濾芯,所述隔離盤將所述罐體分隔成上部和下部;所述過濾芯一端與所述隔離盤相連接且所述過濾芯的開口暴露於所述隔離盤的表面,另一端向所述罐體的下部延伸;所述進氣口位於所述罐體下部的側壁上,所述排氣口位於所述罐體上部的側壁上;清潔裝置,位於所述罐體内;所述清潔裝置包括連接桿、固定板及清潔單元;所述連接桿與所述固定板相連接,且所述連接桿貫穿所述隔離盤並向所述罐體的上部延伸;所述固定板位於所述隔離盤的下方;所述清潔單元與所述固定板相連接,且與所述過濾芯的側壁相接觸;驅動裝置,與所述清潔裝置的連接桿相連接,用於驅動所述清潔裝置上下移動以對所述過濾芯的側壁進行清潔。In order to achieve the above-mentioned objects and other related objects, the present invention provides a dust-collecting tank. The dust-collecting tank includes: a tank body with an air inlet, an exhaust port, and a dust removal port; and a filter device located in the tank body. The tank body; the filter device includes an isolation disk and at least one filter core, the isolation disk divides the tank body into an upper part and a lower part; one end of the filter core is connected with the isolation disk and the filter core The opening is exposed on the surface of the isolation disc, and the other end extends toward the lower part of the tank body; the air inlet is located on the side wall of the lower part of the tank body, and the exhaust port is located on the side wall of the upper part of the tank body The cleaning device is located in the tank; the cleaning device includes a connecting rod, a fixing plate and a cleaning unit; the connecting rod is connected to the fixing plate, and the connecting rod penetrates the isolation disc and faces the The upper part of the tank body extends; the fixing plate is located below the isolation disc; the cleaning unit is connected to the fixing plate and is in contact with the side wall of the filter element; a driving device is connected to the cleaning device The connecting rod is connected to drive the cleaning device to move up and down to clean the side wall of the filter element.
於一實施例中,所述清潔單元包括橡膠刮圈,所述清潔單元的數量與所述過濾芯的數量相同;所述清潔單元對應套設於所述過濾芯的外壁。In an embodiment, the cleaning unit includes a rubber scraper, and the number of the cleaning unit is the same as the number of the filter element; the cleaning unit is correspondingly sleeved on the outer wall of the filter element.
於一實施例中,所述罐體還具有頂部開口,所述頂部開口處設置有三通閥,所述驅動裝置可經由所述頂部開口伸入至所述罐體内與所述清潔裝置的連接桿相連接。In one embodiment, the tank body further has a top opening, a three-way valve is provided at the top opening, and the driving device can extend into the tank body and the cleaning device through the top opening. The rods are connected.
於一實施例中,所述隔離盤為隔離法蘭,所述過濾芯的數量為多個,多個所述過濾芯均匀分佈;所述驅動裝置為氣缸。In one embodiment, the isolation disc is an isolation flange, the number of the filter element is multiple, and the multiple filter elements are evenly distributed; the driving device is an air cylinder.
於一實施例中,所述清潔裝置還包括套設於所述連接桿上的密封圈,所述密封圈與所述固定板相接觸。In an embodiment, the cleaning device further includes a sealing ring sleeved on the connecting rod, and the sealing ring is in contact with the fixing plate.
於一實施例中,所述集塵罐還包括多個立柱,與所述罐體的底部相連接,用於支撑所述罐體;所述罐體的下部呈漏斗狀,所述除塵口位於所述罐體的底部。In an embodiment, the dust collecting tank further includes a plurality of uprights connected to the bottom of the tank body for supporting the tank body; the lower part of the tank body is in the shape of a funnel, and the dust removal port is located at The bottom of the tank.
於一實施例中,所述集塵罐還包括導向柱和彈簧,位於所述罐體内;所述導向柱的一端與所述隔離盤相連接,另一端向所述罐體的下部延伸;所述彈簧位於所述清潔裝置的所述固定板的下方且所述彈簧套設於所述固定桿上。In an embodiment, the dust collection tank further includes a guide post and a spring, which are located in the tank body; one end of the guide post is connected with the isolation disk, and the other end extends toward the lower part of the tank body; The spring is located below the fixed plate of the cleaning device and the spring is sleeved on the fixed rod.
本發明還提供一種單晶生長設備,所述單晶生長設備包括爐體、排氣裝置及如前述任一實施例中所述的集塵罐;所述集塵罐的進氣口與所述爐體的排氣口相連接,所述集塵罐的排氣口與所述排氣裝置相連接。The present invention also provides a single crystal growth equipment. The single crystal growth equipment includes a furnace body, an exhaust device, and the dust collecting tank as described in any of the foregoing embodiments; the air inlet of the dust collecting tank and the The exhaust port of the furnace body is connected, and the exhaust port of the dust collecting tank is connected with the exhaust device.
所述排氣裝置包括真空泵及尾氣處理單元,所述真空泵一端與所述集塵罐的排氣口相連接,另一端與所述尾氣處理單元相連接。The exhaust device includes a vacuum pump and an exhaust gas processing unit, one end of the vacuum pump is connected with the exhaust port of the dust collecting tank, and the other end is connected with the exhaust gas processing unit.
本發明還提供一種單晶生長方法,所述單晶生長方法基於前述任一方案中所述的單晶生長設備進行。The present invention also provides a single crystal growth method, which is performed based on the single crystal growth device described in any one of the foregoing solutions.
如上所述,本發明的集塵罐、單晶生長設備及單晶生長方法,具有以下有益效果:本發明的集塵罐可以在每次製程生產結束後,利用其自帶的清潔裝置對過濾芯表面進行清潔,可有效彌補現有清潔方式的不足,有助於提高過濾芯表面的清潔度、延長真空泵的使用壽命;且整個清潔過程可實現完全的自動化,有利於降低人力成本和保障人員健康;採用本發明的單晶生長設備和單晶生產方法進行單晶生長,有助於穩定單晶生長過程中的內壓,有助於提高單晶生長品質和降低生產成本。As mentioned above, the dust collecting tank, single crystal growth equipment and single crystal growth method of the present invention have the following beneficial effects: the dust collecting tank of the present invention can use its own cleaning device to filter after each production process. Cleaning the surface of the core can effectively make up for the deficiencies of the existing cleaning methods, help improve the cleanliness of the surface of the filter element, and extend the service life of the vacuum pump; and the entire cleaning process can be fully automated, which is beneficial to reduce labor costs and protect personnel health ; Using the single crystal growth equipment and single crystal production method of the present invention for single crystal growth helps stabilize the internal pressure in the single crystal growth process, helps to improve the single crystal growth quality and reduce production costs.
以下由特定的具體實施例說明本發明的實施方式,熟悉此技術的人士可由本說明書所揭露的内容輕易地了解本發明的其他優點及功效。The following specific examples illustrate the implementation of the present invention. Those familiar with this technology can easily understand other advantages and effects of the present invention from the content disclosed in this specification.
請參閱圖1至圖4。須知,本說明書所附圖式所繪示的結構、比例、大小等,均僅用以配合說明書所揭示的内容,以供熟悉此技術的人士了解與閱讀,並非用以限定本發明可實施的限定條件,故不具技術上的實質意義,任何結構的修飾、比例關係的改變或大小的調整,在不影響本發明所能產生的功效及所能達成的目的下,均應仍落在本發明所揭示的技術内容所能涵蓋的範圍内。同時,本說明書中所引用的如“上”、“下”、“左”、“右”、“中間”及“一”等的用語,亦僅為便於敘述,而非用以限定本發明可實施的範圍,其相對關係的改變或調整,在無實質變更技術内容下,當亦視為本發明可實施的範疇。Please refer to Figure 1 to Figure 4. It should be noted that the structures, proportions, sizes, etc. shown in the accompanying drawings in this specification are only used to match the content disclosed in the specification for people familiar with this technology to understand and read, and are not intended to limit the implementation of the present invention. Limited conditions, so it has no technical significance. Any structural modification, proportional relationship change or size adjustment should still fall under the present invention without affecting the effects and objectives that can be achieved by the present invention. Within the scope of the disclosed technical content. At the same time, the terms such as "upper", "lower", "left", "right", "middle" and "one" cited in this specification are only for convenience of description, rather than limiting the scope of the present invention. The scope of implementation, and the change or adjustment of the relative relationship, shall also be regarded as the scope of the implementation of the present invention without substantial changes to the technical content.
實施例一Example one
如圖1至圖3所示,本發明提供一種集塵罐1,所述集塵罐1包括:罐體11,所述罐體11上具有進氣口111、排氣口112及除塵口113;過濾裝置12,位於所述罐體11内;所述過濾裝置12包括隔離盤121及至少一個過濾芯122,所述隔離盤121將所述罐體11分隔成上部和下部;所述過濾芯122一端與所述隔離盤121相連接且所述過濾芯122的開口暴露於所述隔離盤121的表面,另一端向所述罐體11的下部延伸且較佳與所述罐體11的底部具有間距;所述進氣口111位於所述罐體11下部的側壁上,所述排氣口112位於所述罐體11上部的側壁上;經所述進氣口111進入所述罐體11内的含有氧化物顆粒及其他雜質的廢氣,經所述過濾芯122過濾後,氣體自所述過濾芯122上升至所述罐體11的上部並經所述排氣口112排出,而氧化物顆粒及其他雜質則沈澱至所述罐體11的底部,經所述除塵口113排出;清潔裝置13,位於所述罐體11内;所述清潔裝置13包括連接桿131、固定板132及清潔單元133;所述連接桿131與所述固定板132相連接,且所述連接桿131貫穿所述隔離盤121並向所述罐體11的上部延伸;所述固定板132位於所述隔離盤121的下方;所述清潔單元133與所述固定板132相連接,且與所述過濾芯122的側壁相接觸;驅動裝置14,與所述清潔裝置13的連接桿131相連接,用於驅動所述清潔裝置13上下移動以對所述過濾芯122的側壁進行清潔。本發明的集塵罐1可以在每次製程生產結束後,利用其自備的清潔裝置13對過濾芯122表面進行清潔,可有效彌補現有清潔方式的不足,有助於提高過濾芯122表面的清潔度、延長真空泵的使用壽命;且整個清潔過程可實現完全的自動化,有利於降低人力成本和保障人員健康。As shown in Figures 1 to 3, the present invention provides a
所述罐體11的主體形狀可為圓柱形、矩形或其他任意形狀。本實施例中,作為示例,所述罐體11的主體形狀呈圓柱形,下部呈漏斗狀,所述除塵口113位於所述罐體11的底部,所述除塵口113處設置有閥門(未標示),以在需要時可以打開所述除塵口113進行除塵操作,这样的結構有助於避免氧化物顆粒及其他雜質積聚在所述罐體11的角落。所述罐體11的材質較佳為導熱效果優良的金屬材質,例如不鏽鋼、鋁合金、汞合金、銅合金、鉬合金、錳合金、鈮合金及鈦合金等,考慮到廢氣中可能含有多種腐蝕性及有毒有害性氣體,同時兼顧經濟性和堅固等特性,所述罐體11的材質較佳為不鏽鋼,並且内壁最好做進一步的防腐蝕處理。在一示例中,所述罐體11上設置有透明可視窗口(未圖示),例如為一鋼化玻璃材質的可視窗口,該可視窗口可設置於所述罐體11的下部且位於與所述進氣口111相對的側壁上,其所在高度較佳為高於所述進氣口111所在的高度,以藉由所述可視窗口對所述罐體11內部的情況進行觀察,例如觀察所述罐體11內的氧化物顆粒沈澱狀況和所述進氣口111是否有堵塞情況等。所述罐體11可為一體式結構,也可以為上下可拆卸的結構以便需要時可對所述罐體11內部進行清潔保養。例如可自所述隔離盤121處分為可拆卸的上下兩部分,但需確保所述罐體11在工作時上下兩部分處於完全密封的狀態。為確保所述罐體11的上部和下部的良好隔離,所述隔離盤121的尺寸需與其所在位置的所述罐體11的水平面的面積相等,由此使得過濾後的氣體只能通過所述過濾芯122上升至所述罐體11的上部並經所述排氣口112排出。故確保所述過濾芯122的正常過濾功能係非常重要,如果所述過濾芯122被堵塞,過濾後的氣體不能通過所述過濾芯122排出,將極易導致所述罐體11內的氣壓異常,嚴重時甚至會導致所述罐體11的爆炸,因而本申請進行了改進以對所述過濾芯122進行深度清潔。在一示例中,所述隔離盤121為金屬材質的隔離法蘭,其材質較佳為表面光滑的不鏽鋼,以確保所述隔離盤121的結構穩定,同時減小氧化物顆粒沈積在所述隔離盤121表面的可能。The main body shape of the
所述過濾芯122可為金屬材質的過濾器,其頂部可略高於所述隔離盤121的上表面,數量較佳為多個,例如為2個、3個、4個或更多個,具體可根據所述罐體11的水平面的面積和所述過濾芯122的直徑而定,多個所述過濾芯122的尺寸和材質較佳為相同,且多個所述過濾芯122較佳均勻間隔分佈,有助於確保所述罐體11內的氣壓均衡。所述過濾芯122的水平面直徑較佳介於2~10 cm之間(包括端點值),以避免因所述過濾芯122的過濾口徑太小導致含氧化物顆粒的氣體無法及時過濾導致所述罐體11內氣壓上升,同時避免因過濾口徑太大導致過濾效果下降等問題,其具體的規格可根據氧化物顆粒的通常直徑而定,例如所述過濾芯122的氣孔直徑通常不大於0.1微米。所述清潔單元133的數量較佳與所述過濾芯122的數量相同,且所述清潔單元133較佳為一一對應套設於所述過濾芯122的外壁;所述清潔單元133可以完全套設於所述過濾芯122的外壁,及所述清潔單元133的內徑與所述過濾芯122的外徑相同,也可以僅部分套設,例如為半圓環狀,較佳為完全套設的形式,有助於加快清潔速度。The
所述清潔單元133可為任意具有清潔功能的結構。在一示例中,所述清潔單元133為橡膠刮圈,且所述橡膠刮圈與所述過濾芯122接觸的表面較佳為非平坦結構,例如呈均匀分佈的凸點、波紋或其他任意非平坦狀,以在清潔過程中增大其和所述過濾芯122的外壁的摩擦,提高清潔效果。The
在另一示例中,所述清潔單元133為毛刷,例如為塑料材質或不鏽鋼材質的毛刷,且所述毛刷的刷毛尺寸不大於所述過濾芯122上的氣孔尺寸,以使刷毛可伸入至所述過濾芯122的氣孔內進行深度清潔。In another example, the
為確保所述罐體11在工作時的高度密封,作為示例,所述罐體11還具有頂部開口114,所述頂部開口114處設置有三通閥115以對所述頂部開口114的開閉進行控制。在製程生產结束後需對所述過濾芯122進行清潔時,所述驅動裝置14可經由所述頂部開口114伸入至所述罐體11内與所述清潔裝置13的連接桿131相連接,所述驅動裝置14可驅動所述清潔裝置13上下移動以對所述過濾芯122的側壁進行清潔,且根據需要所述驅動裝置14還可以驅動所述清潔裝置13圍繞所述過濾芯122進行旋轉以對所述過濾芯122的外壁進行全面清潔。所述驅動裝置14可為氣缸或伺服電機。In order to ensure a high degree of sealing of the
為進一步確保所述罐體11的上下兩部分的隔離,作為示例,所述清潔裝置13還包括套設於所述連接桿131上的密封圈134,所述密封圈134與所述固定板132相接觸,具體如圖2所示。To further ensure the isolation of the upper and lower parts of the
為便於沈澱後的氧化物顆粒的收集,作為示例,所述集塵罐1還包括多個立柱15,與所述罐體11的底部相連接,用於支撑所述罐體11。所述立柱15和所述罐體11可為一體固定連接,也可以是可拆卸連接,例如多個所述立柱15可為一個可拆卸的支架以支撐所述罐體11,可拆卸設計有助於所述罐體11的搬運移動。In order to facilitate the collection of precipitated oxide particles, as an example, the
作為示例,所述集塵罐1還包括導向柱16和彈簧17,位於所述罐體11内;所述導向柱16的一端與所述隔離盤121相連接,另一端向所述罐體11的下部延伸;所述彈簧17位於所述清潔裝置13的所述固定板132的下方且所述彈簧17套設於所述固定桿上,所述導向柱16的縱向長度較佳大於所述過濾芯122的縱向長度(即所述導向柱16的底部相較於所述過濾芯122的底部更向下伸出);所述導向柱16和所述彈簧17的設置有助於確保在製程生產期間,即在所述清潔裝置13不工作時使所述固定板132貼置在所述隔離盤121的下表面,避免妨礙所述過濾芯122的正常過濾工作,確保所述罐體11內的密封,同時在非製程生產期間,即在所述清潔裝置13對所述過濾芯122進行清潔的過程中,所述導向柱16和所述彈簧17有助於增大所述清潔裝置13的移動阻力,從而有助於增強所述清潔單元133和所述過濾芯122的摩擦力,有助於提高清潔效果。所述導向柱16同樣較佳為多個,例如為2個、3個、4個或更多個(較佳係與所述過濾芯122的數量一致,例如均為4個),多個所述導向柱16均勻間隔分佈,具體如圖3所示。需要特別說明的是,圖3中示意出的所述導向柱16並不代表所述導向柱16一定要延伸至所述隔離盤121的上表面而只是示意出了所述導向柱16與所述隔離盤121相接觸的位置。As an example, the
作為示例,所述集塵罐1還設置有冷卻裝置18,根據所述冷卻裝置18的具體結構不同,可設置於所述罐體11的內部和/或外部。例如所述冷卻裝置18可以為氣冷裝置或水冷裝置,較佳位於所述罐體11的外部,且較佳至少覆蓋所述罐體11下部,所述冷卻裝置18有助於所述罐體11內的降溫,從而有助於加快氧化物顆粒的沈澱。當所述冷卻裝置18為水冷裝置時,所述冷卻裝置18的冷卻管路還可以與工廠的廠務端的供熱系統相連接,以實現熱量的回收利用。由於單晶生長過程通常在高溫下進行,排放廢氣的攜帶熱量通過這樣的方式可實現回收再利用。As an example, the
利用所述集塵罐1進行顆粒物收集時,可以在製程生產結束後打開所述頂部開口114處的三通閥115和所述除塵口113處的閥門,所述驅動裝置14驅動所述清潔裝置13上下移動以對所述過濾芯122的外壁進行清潔;在此過程中可以啟動所述冷卻裝置18以給所述集塵罐1快速降溫以加速氧化物顆粒的沈澱,沈積到所述罐體11底部的灰塵顆粒通過所述除塵口113排出。完成所述過濾芯122的清潔後所述驅動裝置14離開所述罐體11,所述頂部開口114關閉;所述清潔裝置13退回到原位,即退回至與所述隔離盤121貼置。根據需要還可以利用氣體的壓力差反吹來對所述過濾芯122進行更深層次的清潔,以進一步提高所述過濾芯122表面的清潔度,確保所述罐體11內的氣壓平衡,並由此穩定與所述集塵罐1相連接的設備,例如單晶生長爐的內壓,同時延長真空泵的使用壽命。所述驅動裝置14、所述閥門及所述除塵口113的開閉可以通過設備控制,因而整個清潔過程可以實現完全的自動化,可以降低人力成本,並避免氧化物顆粒及雜質對人體可能造成的危害。本實施例的集塵罐可以用於任何需要對灰塵顆粒進行收集管控的生產環境,例如可應用於單晶生長、化學氣相沈積等製程的尾氣處理,因而本發明可以廣泛應用於晶圓製造廠、芯片製造廠、液晶面板製造廠及太陽能電池片廠等。When the
實施例二Example two
如圖4所示,本發明還提供一種單晶生長設備,所述單晶生長設備包括爐體2、排氣裝置3及如實施例一中所述的集塵罐1,故對所述集塵罐1的說明請參考實施例一,出於簡潔的目的在此不贅述;所述集塵罐1的進氣口111與所述爐體2的排氣口112相連接,所述集塵罐1的排氣口112與所述排氣裝置3相連接。As shown in FIG. 4, the present invention also provides a single crystal growth equipment, which includes a
作為示例,所述排氣裝置3包括真空泵31及尾氣處理單元32,所述真空泵31一端與所述集塵罐1的排氣口112相連接,另一端與所述尾氣處理單元32相連接;所述尾氣處理單元32可以是水洗式尾氣處理單元,也可以是燃燒式尾氣處理單元,還可以是包含燃燒和水洗兩種功能的尾氣處理單元(gas scrubber),通過所述集塵罐1對自所述爐體2排出的尾氣進行顆粒物的過濾沈澱,可以避免顆粒物造成所述真空泵31的堵塞,降低所述真空泵31的清潔保養頻率和成本,延長所述真空泵31的使用壽命;過濾後的氣體經所述真空泵31排放至所述尾氣處理單元32做進一步淨化處理後再排放,有助於減少環境污染。As an example, the
作為示例,所述單晶生長設備還包括一控制裝置4,例如一電腦,所述控制裝置4係與所述爐體2、所述排氣裝置3及所述集塵罐1(包括前述的所述三通閥115、所述驅動裝置14及所述清潔裝置13等)相連接,因而所述單晶生長設備可實現完全地自動化。例如,所述控制裝置4在爐體2內的製程生產結束後關閉所述爐體2的排氣口112,打開所述除塵口113且控制所述三通閥115打開以使所述驅動裝置14通過所述罐體11的頂部開口114進入所述罐體11內並驅動所述清潔裝置13上下移動以對所述過濾芯122的外壁進行清潔,經預設的時間後再將所述驅動裝置14退回至所述罐體11外並關閉所述三通閥115和所述排氣口112,利用所述真空泵31對所述罐體11內進行氣體反吹以對所述過濾芯122進行進一步清潔。在清潔流程完成後所有的裝置都複位到待機狀態以開始下一次的單晶生長。採用本發明的單晶生長設備進行單晶生長,可因所述集塵罐內保持在較佳的工作狀態而確保所述爐體內的氧化物顆粒及其他雜質被及時排出,由此可以避免氧化物顆粒對生長的單晶造成污染,提高單晶的品質,有助於生產良率的提高。且整個單晶生長過程可實現完全的自動化,有助於降低生產成本。As an example, the single crystal growth equipment further includes a
本發明還提供一種單晶生長方法,所述單晶生長方法基於實施例二所述的單晶生長設備進行,除增加了所述過濾芯的清潔過程外,所述單晶生長方法與常規方法並無其他明顯差異,由於此部分内容為本技術領域所熟知,故省略進一步說明。本發明的單晶生長方法由於使用了前述的單晶生長設備進行,因而可以提高單晶生長品質、提高工作效率。The present invention also provides a single crystal growth method. The single crystal growth method is performed based on the single crystal growth equipment described in the second embodiment. In addition to increasing the cleaning process of the filter element, the single crystal growth method is the same as the conventional method. There are no other obvious differences. Since this part of the content is well known in the technical field, further description is omitted. Since the single crystal growth method of the present invention is performed using the aforementioned single crystal growth equipment, the single crystal growth quality and work efficiency can be improved.
綜上所述,本發明提供一種集塵罐、單晶生長設備及單晶生長方法。本發明的集塵罐可以在每次製程生產結束後,利用其自帶的清潔裝置對過濾芯表面進行清潔,可有效彌補現有清潔方式的不足,有助於提高過濾芯表面的清潔度、延長真空泵的使用壽命;且整個清潔過程可實現完全的自動化,有利於降低人力成本和保障人員健康。採用本發明的單晶生長設備及單晶生長方法,可有效提高生產良率,降低生產成本。In summary, the present invention provides a dust collecting tank, single crystal growth equipment and single crystal growth method. The dust collector of the present invention can use its own cleaning device to clean the surface of the filter element after each production process, which can effectively make up for the shortcomings of the existing cleaning methods, and help to improve the cleanliness and lengthen the surface of the filter element. The service life of the vacuum pump; and the entire cleaning process can be fully automated, which is conducive to reducing labor costs and ensuring personnel health. Adopting the single crystal growth equipment and single crystal growth method of the present invention can effectively improve the production yield and reduce the production cost.
上述實施例僅例示性說明本發明的原理及其功效,而非用於限制本發明之範疇。任何具本領域通常知識者皆可在不違背本發明的精神及範疇下,對上述實施例進行修飾或改變。因此,舉凡具本領域通常知識者在未悖離本發明所揭示的精神及技術思想下所完成的一切均等修飾或改變,均落入本發明的申請專利範圍中。The above-mentioned embodiments only exemplarily illustrate the principles and effects of the present invention, and are not used to limit the scope of the present invention. Anyone with ordinary knowledge in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Therefore, all the equivalent modifications or changes completed by those with ordinary knowledge in the field without departing from the spirit and technical ideas disclosed in the present invention fall into the scope of the patent application of the present invention.
1:集塵罐 11:罐體 111:進氣口 112:排氣口 113:除塵口 114:頂部開口 115:三通閥 12:過濾裝置 121:隔離盤 122:過濾芯 13:清潔裝置 131:連接桿 132:固定板 133:清潔單元 134:密封圈 14:驅動裝置 15:立柱 16:導向柱 17:彈簧 18:冷卻裝置 2:爐體 3:排氣裝置 31:真空泵 32:尾氣處理單元 4:控制裝置1: Dust collecting tank 11: Tank 111: air inlet 112: exhaust port 113: Dust removal port 114: top opening 115: Three-way valve 12: Filtering device 121: Isolation Disk 122: filter element 13: Cleaning device 131: connecting rod 132: fixed plate 133: Cleaning unit 134: Sealing ring 14: drive device 15: Column 16: guide column 17: Spring 18: Cooling device 2: Furnace 3: Exhaust device 31: Vacuum pump 32: Exhaust gas treatment unit 4: control device
圖1顯示本發明實施例一的集塵罐的截面結構示意圖。Fig. 1 shows a schematic diagram of a cross-sectional structure of a dust collecting tank according to the first embodiment of the present invention.
圖2顯示本發明實施例一的集塵罐的清潔裝置的結構示意圖。Fig. 2 shows a schematic structural diagram of a cleaning device for a dust collecting tank according to the first embodiment of the present invention.
圖3顯示本發明實施例一的集塵罐的隔離盤的俯視結構示意圖。Fig. 3 shows a schematic top view of the isolation plate of the dust collecting tank according to the first embodiment of the present invention.
圖4顯示本發明實施例二的單晶生長設備的結構示意圖。FIG. 4 shows a schematic diagram of the structure of the single crystal growth equipment according to the second embodiment of the present invention.
1:集塵罐 1: Dust collecting tank
11:罐體 11: Tank
111:進氣口 111: air inlet
112:排氣口 112: exhaust port
113:除塵口 113: Dust removal port
114:頂部開口 114: top opening
115:三通閥 115: Three-way valve
12:過濾裝置 12: Filtering device
121:隔離盤 121: Isolation Disk
122:過濾芯 122: filter element
131:連接桿 131: connecting rod
132:固定板 132: fixed plate
133:清潔單元 133: Cleaning unit
14:驅動裝置 14: drive device
15:立柱 15: Column
16:導向柱 16: guide column
17:彈簧 17: Spring
18:冷卻裝置 18: Cooling device
Claims (10)
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CN201910671773.5A CN110359089B (en) | 2019-07-24 | 2019-07-24 | Dust collecting tank, single crystal growing apparatus and single crystal growing method |
CN201910671773.5 | 2019-07-24 |
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TW202104684A true TW202104684A (en) | 2021-02-01 |
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DE102020112861A1 (en) * | 2020-01-28 | 2021-07-29 | Herding Gmbh Filtertechnik | Process for dry filtration of a gas stream that carries foreign bodies, and filter device for cleaning of raw gas that carries foreign bodies |
EP4306683A1 (en) * | 2022-07-13 | 2024-01-17 | Siltronic AG | Device for purifying waste gases from a crystal pulling system |
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DE19917165C2 (en) * | 1999-04-16 | 2001-02-08 | Karlsruhe Forschzent | Process for cleaning tubular filter elements and device for carrying out the process |
KR20030033188A (en) * | 2001-10-18 | 2003-05-01 | 주식회사 실트론 | A filtering apparatus using in a single crystalline silicon grower |
KR101304743B1 (en) * | 2011-03-10 | 2013-09-05 | 주식회사 엘지실트론 | Filtering apparatus for Manufacturing Single Crystal Ingot and Single Crystal Ingot Grower including the same |
CN204429011U (en) * | 2014-12-24 | 2015-07-01 | 北京优势同翔科技有限公司 | A kind of single crystal growing furnace vacuum apparatus |
CN105056646A (en) * | 2015-07-28 | 2015-11-18 | 侯继伟 | Automatic dust collector for vacuum tail gas of monocrystal silicon growing furnace |
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